Cable processing method

Abstract

The invention provides a cable processing method. The cable processing method comprises the following steps: placing a cable in an inert gas protection cavity; performing high-temperature treatment on the inert gas protection cavity to increase the crystallinity of the insulating layer of the cable; and carrying out gradient cooling treatment on the inert gas protection cavity after high-temperature treatment, so that the temperature in the inert gas protection cavity is reduced to a preset cooling temperature at a preset cooling rate, compared with the prior art, the shrinkage force of the insulating layer is reduced, axial displacement caused by thermal expansion of the insulating layer can be reduced or even eliminated, and the service life of the insulating layer is prolonged. Therefore, axial displacement between the insulating layer and the conductor layers on the inner side and the outer side is reduced or even eliminated, the situation that impedance mismatch of the cable connector affects high-frequency signal transmission is avoided, meanwhile, when high-power signals are transmitted, the situation that partial discharge is caused by an interface separated due to the axial displacement, cable assemblies are damaged can be avoided, and the service life of the cable connector is prolonged. And even a short circuit risk is caused.

Description

Technical Field

[0001] This application relates to the technical field of cables, and specifically relates to a cable processing method. Background Art

[0002] In the field of cable manufacturing, insulation wrapping and forming is a common coating process. For example, the insulation layer of a low-loss stable-phase RF coaxial cable is formed by wrapping with a low-density polytetrafluoroethylene tape. The low-density property of the polytetrafluoroethylene tape enables the cable to have lower losses and higher transmission rates.

[0003] However, due to the large difference in the thermal expansion coefficients between low-density polytetrafluoroethylene and metal conductors (such as copper or aluminum), significant axial displacement occurs between the insulation layer of the cable and the conductor layers on the inner and outer sides of the insulation layer. As a result, impedance mismatch occurs in the cable connector, affecting high-frequency signal transmission. When transmitting high-power signals, local discharge will be triggered at the interface separated due to axial displacement, causing damage to the cable assembly and even leading to the risk of short circuit. Summary of the Invention

[0004] This application mainly provides a cable processing method that can reduce or even eliminate the axial displacement that occurs between the insulation layer and the conductor layers on the inner and outer sides.

[0005] To solve the above technical problems, one technical solution adopted in this application is: providing a cable processing method, the cable processing method includes: placing the cable in an inert gas protection cavity; performing high-temperature treatment on the inert gas protection cavity to increase the crystallinity of the insulation layer of the cable; performing gradient cooling treatment on the inert gas protection cavity after high-temperature treatment, so that the temperature in the inert gas protection cavity decreases to a preset cooling temperature at a preset cooling rate.

[0006] In a specific embodiment, the step of placing the cable in the inert gas protection cavity includes: placing the cable in a closed cavity; introducing an inert gas into the closed cavity.

[0007] In a specific embodiment, the inert gas is nitrogen or argon.

[0008] In a specific embodiment, the purity of the inert gas in the inert gas protection cavity ≥ 99.9%, and the oxygen content in the inert gas protection cavity ≤ 0.1%.

[0009] In a specific embodiment, the step of performing high-temperature treatment on the inert gas protection cavity includes: raising the temperature in the inert gas protection cavity to a preset heating temperature at a preset heating rate; maintaining the inert gas protection cavity at a preset time.

[0010] In a specific embodiment, the preset heating rate is 10 °C per minute.

[0011] In a specific embodiment, the preset heating temperature is 250 °C ± 10 °C.

[0012] In a specific embodiment, the preset time is 20 - 30 minutes.

[0013] In a specific embodiment, the preset cooling rate is 10 °C per minute.

[0014] In a specific embodiment, the preset cooling temperature is 80 °C.

[0015] The beneficial effects of the present application are as follows: Different from the prior art, the cable processing method provided by the present application includes: placing the cable in an inert gas protection cavity; performing high-temperature treatment on the inert gas protection cavity to increase the crystallinity of the insulating layer of the cable; performing gradient cooling treatment on the inert gas protection cavity after the high-temperature treatment, so that the temperature in the inert gas protection cavity decreases to the preset cooling temperature at the preset cooling rate. Through this method, first, an inert gas protection environment is provided, and then, through high-temperature treatment, the crystallinity of the insulating layer of the cable is increased, thereby improving the dimensional stability of the insulating layer. Finally, through gradient cooling treatment, the stress concentration caused by the sudden temperature drop of the insulating layer is avoided, thereby reducing the shrinkage force of the insulating layer. Compared with the prior art, the shrinkage force of the insulating layer is reduced, which can reduce or even eliminate the axial displacement caused by its own thermal expansion, thereby reducing or even eliminating the axial displacement between the insulating layer and the conductor layers on the inner and outer sides, avoiding the impedance mismatch of the cable connector and affecting the transmission of high-frequency signals. At the same time, when transmitting high-power signals, it can also avoid partial discharge caused by the interface separated due to axial displacement, resulting in damage to the cable assembly and even the risk of short circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0017] Figure 1 is a schematic flowchart of an embodiment of the cable processing method provided by the present application;

[0018] Figure 2 is Figure 1 a specific flowchart of step S11 in an embodiment. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0019] The present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be specifically noted that the following embodiments are only used to illustrate the present application, but do not limit the scope of the present application. Similarly, the following embodiments are only partial embodiments of the present application rather than all embodiments. All other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of the present application.

[0020] The terms "first", "second", and "third" in the present application are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first", "second", and "third" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically defined. All directional indications (such as up, down, left, right, front, back...) in the embodiments of the present application are only used to explain the relative positional relationship and movement conditions between components in a specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indications will also change accordingly. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally further include steps or units not listed, or may optionally further include other steps or units inherent to these processes, methods, products, or devices.

[0021] Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the present application. The phrase appears in various places in the specification and does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0022] Please refer to Figure 1 , Figure 1 which is a schematic flowchart of an embodiment of the cable processing method provided by the present application. The cable processing method in this embodiment includes:

[0023] S11: Place the cable in an inert gas protection cavity;

[0024] Please refer to Figure 2 , Figure 2 which is Figure 1 a specific flowchart of an embodiment of step S11 in

[0025] S111: Place the cable in a sealed cavity;

[0026] It can be understood that in this step S111, the sealed cavity can be artificially preset in advance, and the specific setting method is not limited.

[0027] S112: Introduce an inert gas into the sealed cavity.

[0028] Optionally, the inert gas can be nitrogen or argon, and of course it can also be other inert gases.

[0029] Optionally, the purity of the inert gas in the inert gas protection cavity ≥ 99.9%, and the oxygen content in the inert gas protection cavity ≤ 0.1%.

[0030] For example, taking nitrogen as the inert gas, the nitrogen environment can prevent the insulating material from reacting with oxygen at high temperatures, resulting in the breakage of molecular chains, reducing the interference of thermal oxidative cross-linking, promoting the orderly arrangement of molecular chains, thereby increasing the crystallinity of the insulating material. Combined with a lower oxygen content environment, the effect brought by the nitrogen environment is further improved.

[0031] Further referring to Figure 1 , the cable processing method in this embodiment further includes:

[0032] S12: Perform high-temperature treatment on the inert gas protection cavity to increase the crystallinity of the insulating layer of the cable;

[0033] Specifically, first raise the temperature in the inert gas protection cavity to the preset heating temperature at the preset heating rate, and then keep the inert gas protection cavity at a constant temperature for the preset time. Through this high-temperature treatment method, the high temperature can make the molecular chains of the insulating material move sufficiently, increasing the crystallinity and improving the dimensional stability of the insulating layer. For example, the above-mentioned preset heating temperature is 250°C ± 10°C. Compared with a lower temperature, such as 80 - 125°C, the crystallinity can increase by 20%.

[0034] Optionally, the preset heating rate is 10°C / minute.

[0035] Optionally, the preset time is 20 - 30 minutes.

[0036] Furthermore, the cable processing method in this embodiment further includes:

[0037] S13: Perform gradient cooling treatment on the inert gas protection cavity after high-temperature treatment, so that the temperature in the inert gas protection cavity decreases to the preset cooling temperature at the preset cooling rate.

[0038] In this embodiment, by means of the methods in steps S11 to S13, an inert gas protection environment is first provided, and then through high-temperature treatment, the crystallinity of the insulating layer of the cable is increased, thereby improving the dimensional stability of the insulating layer. Finally, through gradient cooling treatment, the stress concentration caused by a sudden temperature drop in the insulating layer is avoided, thereby reducing the shrinkage force of the insulating layer. Compared with the prior art, the shrinkage force of the insulating layer is reduced, which can reduce or even eliminate the axial displacement caused by thermal expansion itself, thereby reducing or even eliminating the axial displacement between the insulating layer and the conductor layers on the inner and outer sides, avoiding the impedance mismatch of the cable connector and affecting the high-frequency signal transmission. At the same time, when transmitting high-power signals, it can also avoid partial discharge caused by the interface separated due to axial displacement, resulting in damage to the cable assembly and even the risk of short circuit.

[0039] Optionally, the preset cooling rate is 10 °C per minute.

[0040] Optionally, the preset cooling temperature is 80 °C.

[0041] It can be understood that in order to better reduce the axial displacement between the insulating layer and the conductor layers on the inner and outer sides, the above steps S12 and S13 can be cycled. For example, after 25 cycles, the axial displacement amount between the insulating layer and the conductor layers on the inner and outer sides can be made less than 0.5 mm.

[0042] The beneficial effect of this application is: different from the prior art, the cable processing method provided by this application includes: placing the cable in an inert gas protection cavity; performing high-temperature treatment on the inert gas protection cavity to increase the crystallinity of the insulating layer of the cable; performing gradient cooling treatment on the inert gas protection cavity after high-temperature treatment so that the temperature in the inert gas protection cavity decreases to the preset cooling temperature at the preset cooling rate. By this method, an inert gas protection environment is first provided, and then through high-temperature treatment, the crystallinity of the insulating layer of the cable is increased, thereby improving the dimensional stability of the insulating layer. Finally, through gradient cooling treatment, the stress concentration caused by a sudden temperature drop in the insulating layer is avoided, thereby reducing the shrinkage force of the insulating layer. Compared with the prior art, the shrinkage force of the insulating layer is reduced, which can reduce or even eliminate the axial displacement caused by thermal expansion itself, thereby reducing or even eliminating the axial displacement between the insulating layer and the conductor layers on the inner and outer sides, avoiding the impedance mismatch of the cable connector and affecting the high-frequency signal transmission. At the same time, when transmitting high-power signals, it can also avoid partial discharge caused by the interface separated due to axial displacement, resulting in damage to the cable assembly and even the risk of short circuit.

[0043] The above are only some embodiments of the present application, and thus do not limit the protection scope of the present application. Any equivalent device or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, shall similarly be included in the patent protection scope of the present application.

Claims

1. A cable processing method, characterized in that, The cable processing method includes: Placing the cable in an inert gas protection cavity; Performing high-temperature treatment on the inert gas protection cavity to increase the crystallinity of the insulation layer of the cable; Performing gradient cooling treatment on the inert gas protection cavity after high-temperature treatment so that the temperature in the inert gas protection cavity decreases to a preset cooling temperature at a preset cooling rate.

2. The cable processing method according to claim 1, characterized in that The step of placing the cable in the inert gas protection cavity includes: Placing the cable in a closed cavity; Introducing an inert gas into the closed cavity.

3. The cable processing method according to claim 2, wherein The inert gas is nitrogen or argon.

4. The cable processing method according to claim 2, characterized in that, The purity of the inert gas in the inert gas protection cavity is ≥99.9%, and the oxygen content in the inert gas protection cavity is ≤0.1%.

5. The cable processing method according to claim 1, characterized in that The step of performing high-temperature treatment on the inert gas protection cavity includes: Raising the temperature in the inert gas protection cavity to a preset heating temperature at a preset heating rate; Insulating the inert gas protection cavity for a preset time.

6. The cable processing method according to claim 5, characterized in that, The preset heating rate is 10°C / minute.

7. The cable processing method according to claim 5, characterized in that, The preset heating temperature is 250°C ± 10°C.

8. The cable processing method according to claim 5, wherein, The preset time is 20 - 30 minutes.

9. The cable processing method according to claim 1, wherein The preset cooling rate is 10°C / minute.

10. The cable processing method according to claim 1, characterized in that, The preset cooling temperature is 80°C.

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