Laser de-bonding method and system without surface damage

Abstract

The invention discloses a laser de-bonding method and system without surface damage. The method comprises the following steps: placing a wafer on a working platform of laser equipment; parameter information of the wafer, the size of a cutting channel on the wafer and the size of a Die on the wafer are obtained, and a first laser scanning path located on the cutting channel is generated; controlling laser equipment to generate a first laser beam with energy P1, and controlling the first laser beam to perform scanning processing along the first laser scanning path so as to complete first laser scanning of the wafer; the laser device is controlled to generate a second laser beam with energy P2, the second laser beam is controlled to carry out whole-surface scanning on the wafer so as to complete second laser scanning of the wafer, and P2 is smaller than or equal to 20% P1; and removing the bonding carrier plate from the wafer after the second laser scanning. According to the method, the passivation layer is prevented from being damaged while complete separation of the bonding layer is ensured, and the method is suitable for de-bonding of the makeup wafer.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor packaging, and particularly to a laser debonding method and system without surface damage. Background Art

[0002] In the process routes of ultra-thin wafers and complex packages, wafer temporary bonding becomes a key process to effectively prevent warping and cracking in the ultra-thin wafer manufacturing process. After the manufacturing process is completed, the corresponding temporary bonding carrier needs to be removed. Currently, the debonding methods include thermal slip debonding, mechanical debonding, and laser debonding. Among them, laser debonding uses a laser to pass through a transparent carrier, and the photon energy is deposited in the photosensitive response material layer, thereby causing rapid decomposition, vaporization, and even plasma generation of the material to lose its adhesiveness; then a transfer device with a chuck is used to peel the wafer and the carrier. However, in practical applications of laser debonding, there are still some problems such as cracks, surface damage, and chipping. Therefore, there is an urgent need to develop a method with zero surface damage, easy removal, and high-efficiency debonding in the laser debonding process. Summary of the Invention

[0003] The present invention aims to at least solve one of the technical problems in the above technologies to some extent. For this purpose, the object of the present invention is to propose a laser debonding method without surface damage, which can avoid damage to the passivation layer while ensuring complete separation of the bonding layer, and is applicable to the debonding of panelized wafers.

[0004] To achieve the above object, a first aspect of the present invention proposes a laser debonding method without surface damage, which includes the following steps:

[0005] Place the wafer on the working platform of the laser device;

[0006] Obtain the parameter information of the wafer, the size of the scribe lines on the wafer, and the size of the Dies on the wafer, and generate a first laser scanning path positioned at the scribe lines;

[0007] Control the laser device to generate a first laser beam with energy P1, and control the first laser beam to scan and process along the first laser scanning path to complete the first laser scanning of the wafer;

[0008] Control the laser device to generate a second laser beam with energy P2, and control the second laser beam to perform a full-surface scan of the wafer to complete the second laser scanning of the wafer, where P2 ≤ 20%P1;

[0009] Remove the bonding carrier from the wafer after the second laser scanning.

[0010] According to a laser debonding method without surface damage of the present invention, the method first obtains the cutting path size and Die distribution information of the wafer, generates the first laser scanning path, and can quickly complete the cutting path setting and positioning; then adopts two laser scans with different energies, the first time using high-energy laser (P1) to debond the cutting path position, and the second time using low-energy laser (P2≤20% P1) to scan the entire surface; in this way, damage and ablation of the passivation layer on the chip surface by high-energy laser can be avoided; and abnormal debonding and cracking caused by simple low-energy laser debonding can be avoided; the surface appearance yield of the wafer after laser debonding is prompted to 100%; thereby, while ensuring the complete separation of the bonding layer, damage to the passivation layer is avoided, and the debonding of the assembled wafer is achieved.

[0011] In addition, the laser debonding method without surface damage proposed above in the present invention may also have the following additional technical features:

[0012] Optionally, there are multiple cutting lanes along the transverse direction of the wafer, and the first laser scanning path is a path that sequentially scans the multiple cutting lanes along the longitudinal direction of the wafer.

[0013] Optionally, there are multiple cutting lanes along the transverse direction of the wafer, and the first laser beam comprises multiple parallel laser beams, and the multiple laser beams scan the multiple cutting lanes in a one-to-one correspondence.

[0014] Furthermore, the laser spacing of the first laser beam is Die size+cutting line width.

[0015] Optionally, the second laser beam comprises a plurality of parallel laser beams, and a laser spacing of the second laser beam is 0.5 mm.

[0016] Optionally, when obtaining parameter information of the wafer, the corresponding laser energy P1 may be obtained from a parameter comparison table according to the parameter information of the wafer.

[0017] Optionally, a movable CCD optical imaging module is used to obtain parameter information of the wafer, the size of the cutting road on the wafer, and the size of the die on the wafer, and a processor is used to process the size information to generate the first laser scanning path.

[0018] Furthermore, if the wafer is a panel wafer and the die sizes of different panel wafers are inconsistent, the laser spacing of the first laser beam on different panel wafers is different.

[0019] Optionally, parameter information of the assembled wafer is obtained, and sizes of cutting paths and dies on different wafer sections are obtained from the beginning to the end along the longitudinal direction of the assembled wafer, and a first laser scanning path is generated.

[0020] To achieve the above object, a second aspect of the present invention provides a laser debonding system without surface damage, which includes:

[0021] A laser device body having a laser emission module and a control module, the control module being connected to the laser emission module to control the laser emission module to output laser energy P1 and laser energy P2;

[0022] A CCD optical imaging module movably mounted on the laser device body;

[0023] A processor disposed on the laser device body and connected to the CCD optical imaging module and the control module.

[0024] According to the laser debonding system without surface damage of the present invention, by controlling the energy and scanning path of the laser beam, zero damage to the surface of the wafer, easy disassembly, and high-efficiency debonding are achieved, and it has the advantages of zero surface damage, easy disassembly, and high-efficiency debonding. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a process flow chart of the laser debonding method without surface damage in the embodiment of the present invention;

[0026] Figure 2 It is a schematic diagram of the laser device in the embodiment of the present invention;

[0027] Figure 3 It is a schematic diagram of the first laser scanning path in the embodiment of the present invention;

[0028] Figure 4 It is a schematic diagram of the second laser scanning path in the embodiment of the present invention;

[0029] Figure 5 It is a schematic diagram of the laser scanning path of product A in the embodiment of the present invention;

[0030] Figure 6 It is an apparent schematic diagram of the passivation layer after laser debonding of the wafer of product A in the embodiment of the present invention;

[0031] Figure 7 It is an apparent schematic diagram of the passivation layer after laser debonding of the wafer of product A in Comparative Example 1. DETAILED DESCRIPTION OF THE INVENTION

[0032] The embodiments of the present invention will be described in detail below. Examples of the embodiments are shown in the drawings, where the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0033] To better understand the above technical solution, the exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present invention are shown in the drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided so that the present invention can be more thoroughly understood and the scope of the present invention can be fully conveyed to those skilled in the art.

[0034] Considering that the existing ultra-thin wafers use a one-time laser scan of the entire surface during laser debonding. When using a high-energy laser scan, there are abnormal Die surface damages; when using a low-energy laser scan, there are abnormal debonding and chip cracking, but no surface damage abnormalities.

[0035] Therefore, the present invention provides a laser debonding method without surface damage. This method ensures complete separation of the bonding layer while avoiding damage to the passivation layer and is applicable to the debonding of panelized wafers.

[0036] For the laser debonding method without surface damage, please refer to Figure 1 , which shows the process flow chart of this method, including the following steps:

[0037] S1: Place the wafer on the working platform of the laser device;

[0038] S2: Obtain the parameter information of the wafer, the size of the scribe lines on the wafer, and the size of the Dies on the wafer, and generate a first laser scan path positioned on the scribe lines;

[0039] S3: Control the laser device to generate a first laser beam with energy P1, and control the first laser beam to perform scanning processing along the first laser scan path to complete the first laser scan of the wafer;

[0040] S4: Control the laser device to generate a second laser beam with energy P2, and control the second laser beam to perform a full-surface scan of the wafer to complete the second laser scan of the wafer, where P2 ≤ 20%P1;

[0041] S5: Remove the bonding carrier from the wafer after the second laser scan.

[0042] Among them, in step S2, it can be understood that the generation of the first laser scan path is achieved by obtaining the parameter information of the wafer, the size of the scribe lines, and the size of the Dies. Specifically, the size information can be collected by a movable CCD optical imaging module, and the information is processed by a processor to generate the scan path. More specifically, as Figure 3As shown in the figure, the starting dicing lane a and the ending dicing lane b are confirmed through the CCD lens of the CCD optical imaging module, and the parameter information of the wafer, the size of the dicing lane, and the size of the Die are obtained. The laser spacing of the first laser scanning path is the position difference h between adjacent dicing lanes. The selection of the energy P1 of the first laser beam in step S3 and the energy P2 of the second laser beam in step S4 is to ensure effective debonding during the first scan and the second scan, while avoiding damage to the wafer surface; and the full-surface scanning of the second laser beam is to ensure uniform heating of the bonding layer, thereby avoiding cracks or damage caused by local overheating. Step S5 is to use an existing chuck transfer device to cooperate in removing the bonding carrier, which will not be elaborated in detail here.

[0043] Thus, through the method of step-by-step laser scanning, first, high-energy precise scanning is performed on the dicing lane, and then low-energy full-surface scanning is performed, effectively solving the problems of cracks and surface damage that may occur during the laser debonding process. Compared with the prior art, this method realizes uniform heating of the bonding layer by controlling the laser energy and scanning path, avoiding local overheating and stress concentration, thereby ensuring the integrity and surface quality of the wafer during the debonding process.

[0044] That is to say, this method first obtains the dicing lane size and Die distribution information of the wafer, generates the first laser scanning path, and can quickly complete the dicing lane setting and positioning; then uses two laser scans with different energies. The first time, high-energy laser (P1) is used to debond the dicing lane position, and the second time, low-energy laser (P2≤20% P1) is used for full-surface scanning; in this way, damage and ablation of the chip surface passivation layer by high-energy laser can be avoided; abnormal splitting and cracking caused by simply using low-energy laser for debonding can be avoided; the surface appearance yield of the wafer after laser debonding is increased to 100%; thus, while ensuring complete separation of the bonding layer, damage to the passivation layer is avoided, and it is applicable to the debonding of a multi-die wafer.

[0045] In some specific examples, such as Figure 3 As shown in the figure, there are multiple dicing lanes along the transverse direction of the wafer, and the first laser scanning path is the path that sequentially scans multiple dicing lanes along the longitudinal direction of the wafer. It can be understood that the dicing lane of the wafer refers to the area on the wafer used to divide the chips, usually a relatively narrow area. The first laser scanning path scans along the dicing lane, which can effectively avoid the direct action of high-energy laser on the chip area, thereby reducing damage to the chip surface. As a preferred implementation manner, the laser beam can scan along the center line of the dicing lane to ensure that the laser energy is concentrated within the dicing lane, further reducing the impact on the chip. As a preferred implementation manner, the laser beam can be as Figure 3 shown in the figure, scan along the transverse direction of the wafer from left to right, and sequentially scan the dicing lanes along the longitudinal direction of the wafer from the beginning to the end.

[0046] In some specific examples, such as Figure 3 shown, there are multiple cutting channels along the lateral direction of the wafer. The first laser beam has multiple parallel laser beams, and the multiple laser beams scan the multiple cutting channels one by one. Specifically, the laser spacing of the first laser beam is the Die size plus the cutting channel width. As a preferred implementation, the laser spacing can be precisely adjusted according to the Die size and the cutting channel width on the wafer to ensure that the laser beam can accurately cover each cutting channel, thereby avoiding damage to the Die. Thus, the parallel arrangement of the multiple laser beams can improve the scanning efficiency and ensure that each cutting channel can be scanned evenly. Among them, the setting of the laser spacing can be precisely adjusted through the control module of the laser device. For example, when the Die size is 1 mm and the cutting channel width is 0.1 mm, the laser spacing can be set to 1.1 mm. In addition, the setting of the laser spacing can also be dynamically adjusted according to the specific situation of the wafer to adapt to different sizes of Dies and cutting channels. The control module of the laser device is an existing editable controller, which will not be elaborated in detail here.

[0047] In this regard, the technical solution of the present application can effectively solve the problems of cracks and surface damage that may occur in the existing laser debonding process through the parallel scanning of multiple laser beams. Specifically, by setting the spacing between the laser beams to the Die size plus the cutting channel width, it can be ensured that the laser beam only acts on the cutting channel area and will not cause unnecessary thermal or mechanical damage to the Die. Further, the parallel arrangement of the multiple laser beams makes the scanning process more efficient, reduces the scanning time, and improves the scanning uniformity and accuracy. While ensuring the debonding effect, the risk of damage to the wafer surface is significantly reduced, and the reliability and stability of the process are improved.

[0048] Further, the energy density parameter of the first laser beam is obtained according to the characteristics of the laser-responsive layer material to ensure the optimization of the scanning effect. That is to say, when obtaining the parameter information of the wafer, the corresponding laser energy P1 can be obtained in the parameter comparison table according to the parameter information of the wafer. In other words, the parameter comparison table includes multiple different laser-responsive layer materials and the corresponding laser energy for each different laser-responsive layer material. For example, when the laser-responsive layer material is m1, the required laser energy is p1; when the laser-responsive layer material is m2, the required laser energy is p2. Among them, the acquisition of the parameter comparison table needs to be obtained through the single-variable method and cross-validation; specifically, use the laser energy p0-1 to perform laser scanning on the debonding area of the wafer to be solved, and record the damage condition of the passivation layer PI surface of the wafer to be solved and the debonding effect and crack probability of the wafer to be solved; then adjust the laser energy to p0-2 and perform laser scanning on the debonding area of the wafer to be solved, and record the damage condition of the passivation layer PI surface of the wafer to be solved and the debonding effect and crack probability of the wafer to be solved; after multiple laser scans with multiple laser energy adjustments, obtain the laser energy P1 with no damage to the passivation layer PI surface of the corresponding wafer to be solved and the lowest crack probability; and so on, record the laser energy P1 corresponding to the wafers to be solved with multiple different laser-responsive layer materials to obtain the parameter comparison table. After that, the parameter comparison table is formed in the processor. In this way, when the operator knows the parameter information of the wafer, the corresponding laser parameters can be retrieved, or when the CCD optical imaging module confirms the parameter information of the wafer, the corresponding laser parameters can be retrieved to perform laser scanning of different types of laser-responsive layers, which can effectively debond and will not damage the passivation layer of the Die surface. In addition, the laser scanning speed adopts the existing scanning speed and will not be elaborated in detail here.

[0049] In some specific examples, such as Figure 4 shown, the second laser beam has multiple parallel laser beams, and the laser spacing of the second laser beam is 0.5 mm. Specifically, the design of the multiple parallel laser beams of the second laser beam enables the laser to evenly cover the entire surface of the wafer, thereby ensuring that the laser energy can be evenly distributed during the whole-surface scanning process and avoiding the occurrence of too high or too low local energy. The laser spacing is set to 0.5 mm, and this parameter has been optimized to minimize the thermal impact on the wafer surface while ensuring the scanning efficiency, thereby reducing the risk of surface damage. As a preferred implementation manner, the laser spacing can be achieved by adjusting the parameters of the laser emission module or by controlling the focusing and divergence angles of the laser beam. This adjustment method adopts the existing technology and will not be elaborated in detail here.

[0050] Thus, by controlling the parallel multiple laser beams of the second laser beam and the laser spacing, the laser energy is evenly distributed on the wafer surface. Therefore, during the full-surface scanning process, the bonding layer can be effectively processed while avoiding damage to the wafer surface.

[0051] Furthermore, the second laser beam performs full-surface scanning along the transverse direction of the wafer. Specifically, the second laser beam scans along the transverse direction on the wafer surface, covering the entire wafer surface. Thus, the full-surface scanning of the second laser beam can effectively irradiate the bonding layer between the wafer and the carrier plate, facilitating subsequent peeling operations.

[0052] In this regard, the transverse full-surface scanning of the second laser beam can be achieved through the control module of the laser device. Among them, the control module accurately controls the movement trajectory of the laser beam according to the parameter information of the wafer and the scanning path.

[0053] In some specific examples, a movable CCD optical imaging module is used to obtain the parameter information of the wafer, the size of the scribe lines on the wafer, and the size of the Dies on the wafer, and a processor is used to process the size information to generate the first laser scanning path and obtain the laser energy P1 and the scanning speed.

[0054] Specifically, the movable CCD optical imaging module can accurately capture and confirm the geometric features of the wafer through its high-precision imaging and processing capabilities, including the product information of the wafer, the width of the scribe lines, and the specific size of the Dies. These size information are transmitted to the processor, and the processor processes these data through built-in algorithms to generate an accurate first laser scanning path; and obtains the corresponding laser energy P1 and scanning speed according to the parameter information of the wafer in the parameter comparison table. Among them, the movability of the CCD optical imaging module enables it to adapt to wafers of different sizes and shapes, ensuring the comprehensiveness and accuracy of the size information. The processor, through its efficient data processing capabilities, quickly generates the scanning path, providing precise guidance for subsequent laser scanning. In some preferred embodiments, the CCD optical imaging module can be implemented by a linear module with multi-axis cooperation for its movability; the CCD optical imaging module and the processor can adopt existing technologies, which will not be elaborated in detail here.

[0055] Thus, by introducing a movable CCD optical imaging module and a processor, the accurate acquisition and rapid processing of the wafer size information are realized, thereby generating an accurate first laser scanning path to accurately locate on the scribe lines of the wafer during the first laser scanning. This not only improves the accuracy and efficiency of laser scanning but also avoids laser scanning deviation caused by inaccurate size information, effectively solving the problems of cracks and surface damage that may occur during the laser debonding process.

[0056] In some specific examples, if the wafer is a mosaic wafer and the Die sizes of different section wafers are inconsistent, the laser spacing of the first laser beam on different section wafers is different. Specifically, a mosaic wafer refers to a wafer composed of multiple section wafers spliced together, and the Die sizes of each section wafer may be different. In this regard, the laser spacing of the first laser beam needs to be adjusted according to the Die size and scribe lane width of each section wafer to ensure the accuracy of the laser scanning path. For example, when the Die size of a certain section wafer is large, the laser spacing increases accordingly; when the Die size is small, the laser spacing decreases accordingly. As a preferred implementation, the Die size and scribe lane width of each section wafer can be obtained through a CCD optical imaging module, and the processor generates the corresponding first laser scanning path.

[0057] Thus, this solution can effectively solve the problem of inaccurate laser scanning path caused by inconsistent Die sizes of mosaic wafers. By dynamically adjusting the laser spacing, it is ensured that the laser beam can accurately scan the scribe lanes of each section wafer, avoiding surface damage or chipping caused by improper laser spacing.

[0058] Among them, the laser energy P1 used for different sections of the mosaic wafer is the same, and the laser energy P1 is determined by the responsive material.

[0059] More specifically, by obtaining the parameter information of the mosaic wafer, along the longitudinal direction of the mosaic wafer, the sizes of the scribe lanes on different section wafers and the sizes of the Dies on the wafer are sequentially obtained from the beginning to the end, and the first laser scanning path is generated.

[0060] Specifically, a mosaic wafer refers to a wafer composed of multiple section wafers spliced together, and the Die sizes of different section wafers may be inconsistent. To ensure the accuracy of the laser scanning path, it is first necessary to obtain the overall size of the mosaic wafer. Then, along the longitudinal direction of the mosaic wafer, the sizes of the scribe lanes and the Dies on each section wafer are sequentially obtained from the beginning to the end. These size information are collected through a movable CCD optical imaging module and processed by the processor, and finally the first laser scanning path is generated. Since the Die sizes of different section wafers may be different, the laser spacing of the generated laser scanning path on different section wafers will also be different to ensure the accuracy and consistency of laser scanning.

[0061] Thus, by obtaining the parameter information of the panelized wafer and sequentially obtaining the saw streets and Die sizes of wafers in different sections longitudinally, a laser scanning path suitable for wafers in different sections can be effectively generated. This method solves the problem of inaccurate laser scanning paths caused by inconsistent Die sizes in panelized wafers, thereby improving the accuracy and efficiency of laser debonding. Compared with the prior art, this solution can better meet the debonding requirements of complex panelized wafers, reduce the laser scanning error caused by size differences, and further improve the quality and stability of the debonding process.

[0062] In addition, as Figure 2 shown, the present application also proposes a laser debonding system without surface damage, including a laser device body, a CCD optical imaging module, and a processor. The laser device body has a laser emission module and a control module, and the laser emission module is adapted to output laser energy P1 and laser energy P2. The CCD optical imaging module is movably mounted on the laser device body for obtaining the parameter information of the wafer, the size of the saw streets on the wafer, and the size of the Dies on the wafer. The processor is arranged on the laser device body and is connected to the control module and the CCD optical imaging module for processing the size information and generating a first laser scanning path, and obtaining the corresponding laser energy in the parameter look-up table according to the parameter information of the wafer.

[0063] Specifically, the laser emission module can output laser beams with different energies according to the instructions of the control module, where P1 is used for the first laser scan and P2 is used for the second laser scan, and the energy of P2 does not exceed 20% of P1. The CCD optical imaging module obtains the parameter information of the wafer by moving and transmits this information to the processor. The processor generates a first laser scanning path and laser energy P1 according to the obtained size information and sends them to the control module to control the laser emission module to perform scanning processing according to this path and this energy.

[0064] As a preferred implementation manner, the CCD optical imaging module can move along the transverse and longitudinal directions of the wafer to ensure obtaining the size information of all saw streets and Dies on the wafer. The processor can also adjust the laser spacing according to different sections of the wafer to adapt to the situation where the Die sizes of wafers in different sections of the panelized wafer are inconsistent.

[0065] Thus, through the collaborative work of the laser device body, the CCD optical imaging module, the processor, and the control module, the technical solution of this application achieves precise laser debonding of the wafer, avoiding the generation of surface damage and cracks. That is to say, compared with the existing laser devices, this application adds a movable CCD optical imaging module to the existing laser device. Among them, the laser emission module can emit lasers with different energies by a single laser emitter emitting different energies respectively, or by using multiple laser emitters emitting different energies respectively.

[0066] The following uses specific examples and comparative examples to elaborate in detail on the use of the laser debonding method without surface damage provided by this application.

[0067] Example 1

[0068] As Figures 5 to 6 shown, the map distribution of the wafer product A is as Figure 5 shown. A movable CCD optical imaging module is used to obtain the parameter information of product A (8-inch wafer, 200 mm, response layer material information), the size of the scribe lanes on the wafer (the width of the scribe lane is 100 μm, and the length is 220 mm), and the size of the Dies on the wafer (12×12 mm); the processor generates the first laser scanning path based on this information and obtains the corresponding laser energy P1 in the parameter comparison table: along the Figure 5 blue arrow, scan with an energy of 5 W and a gap of 12.1. Among them, the first laser beam can be scanned sequentially from the beginning to the end, or can be scanned once with parallel lasers.

[0069] After the first laser scan is completed, the control module controls the laser emission module again to scan along the Figure 5 green arrow on the entire surface of product A with an energy of 1 W and a gap of 0.5. Among them, the second laser beam can be scanned sequentially from the beginning to the end, or can be scanned once with parallel lasers.

[0070] After the second laser scan is completed, the bonding carrier plate of product A can be removed; the appearance of the passivation layer of product A after debonding is as Figure 6 shown. It can be seen that the surface of the passivation layer of product A is normal without damage, and there are no phenomena of chipping or cracking during the process of removing the bonding carrier plate.

[0071] Comparative Example 1

[0072] This comparative example is based on the above Example 1, and scans the entire surface of product A along the Figure 5 green arrow with an energy of 5 W and a gap of 0.5 for the entire surface scan; then the bonding carrier plate of product A is removed; the appearance of the passivation layer of product A after debonding is asFigure 7 As shown, it can be seen that there is a phenomenon of damage on the surface of the passivation layer of Product A.

[0073] In summary, by using the debonding method of the present application, the appearance yield of the wafer surface after laser debonding is increased to 100%.

[0074] Those skilled in the art should understand that the embodiments of the present invention can be provided as a method, a system, or a computer program product. Therefore, the present invention can take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware aspects. Moreover, the present invention can take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0075] The present invention is described with reference to the flowcharts and / or block diagrams of methods, apparatuses (systems), and computer program products according to embodiments of the present invention. It should be understood that each flow and / or block in the flowchart and / or block diagram, and the combination of flows and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to the processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing devices to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing devices generate means for implementing the specified functions in Figure 1 one or more of the processes Figure 1 or multiple processes and / or blocks

[0076] These computer program instructions can also be stored in a computer-readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer-readable memory generate a manufactured article including instruction means, and the instruction means implements the specified functions in Figure 1 one or more of the processes Figure 1 or multiple processes and / or blocks

[0077] These computer program instructions can also be loaded onto a computer or other programmable data processing device, so that a series of operation steps are executed on the computer or other programmable device to generate a computer-implemented process, and thus the instructions executed on the computer or other programmable device provide steps for implementing the specified functions in Figure 1 one or more of the processes Figure 1 or multiple processes and / or blocks

[0078] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation on the present invention.

[0079] In addition, the terms "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "a plurality of" means two or more unless otherwise specifically defined.

[0080] In the present invention, unless otherwise clearly defined and limited, the terms such as "mounted", "connected", "coupled", "fixed", etc. should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0081] In the present invention, unless otherwise clearly defined and limited, the first feature being "on" or "under" the second feature may include the direct contact between the first and second features, or may include the situation where the first and second features are not in direct contact but in contact through additional features therebetween. Moreover, the first feature being "above", "over" and "on top of" the second feature includes that the first feature is directly above and obliquely above the second feature, or merely means that the horizontal height of the first feature is higher than that of the second feature. The first feature being "under", "beneath" and "underneath" the second feature includes that the first feature is directly below and obliquely below the second feature, or merely means that the horizontal height of the first feature is lower than that of the second feature.

[0082] In the description of this specification, the descriptions referring to terms such as "one embodiment", "some embodiments", "examples", "specific examples", or "some examples", etc., mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms should not be understood as necessarily referring to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine the different embodiments or examples described in this specification.

[0083] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those of ordinary skill in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present invention.

Claims

1. A laser debonding method without surface damage, characterized in that Including the following steps: Place the wafer on the working platform of the laser device; Obtain the parameter information of the wafer, the size of the saw streets on the wafer, and the size of the Dies on the wafer, and generate a first laser scanning path positioned at the saw streets; Control the laser device to generate a first laser beam with energy P1, and control the first laser beam to scan and process along the first laser scanning path to complete the first laser scanning of the wafer; Control the laser device to generate a second laser beam with energy P2, and control the second laser beam to perform a full-surface scan of the wafer to complete the second laser scanning of the wafer, where P2 ≤ 20%P1; Demount the bonding carrier from the wafer after the second laser scanning.

2. The laser debonding method without surface damage according to claim 1, characterized in that, There are multiple saw streets along the transverse direction of the wafer, and the first laser scanning path is a path that sequentially scans multiple saw streets along the longitudinal direction of the wafer.

3. The laser debonding method without surface damage according to claim 1, characterized in that, There are multiple saw streets along the transverse direction of the wafer, the first laser beam has multiple parallel laser beams, and the multiple laser beams synchronously scan the multiple saw streets one by one.

4. The laser debonding method without surface damage according to claim 2 or 3, characterized in that, The laser pitch of the first laser beam is the Die size + the saw street width.

5. The laser debonding method without surface damage according to claim 1, wherein The second laser beam has multiple parallel laser beams, and the laser pitch of the second laser beam is 0.5 mm.

6. The laser debonding method without surface damage according to claim 1, wherein, When obtaining the parameter information of the wafer, the corresponding laser energy P1 can be obtained from the parameter comparison table according to the parameter information of the wafer.

7. The laser debonding method without surface damage according to claim 1, wherein A movable CCD optical imaging module is used to obtain the parameter information of the wafer, the size of the saw streets on the wafer, and the size of the Dies on the wafer, and a processor is used to process the size information to generate the first laser scanning path.

8. The laser debonding method without surface damage according to claim 4, wherein If the wafer is a panel wafer and the Die sizes of different panel wafers are inconsistent, then the laser pitches of the first laser beam on different panel wafers are different.

9. The laser debonding method without surface damage according to claim 8, characterized in that Obtain the parameter information of the panel wafer, and sequentially obtain the sizes of the saw streets and the sizes of the Dies on different panel wafers from the head to the tail along the longitudinal direction of the panel wafer, and generate a first laser scanning path.

10. A laser debonding system without surface damage, characterized in that, Including: A laser device body, having a laser emission module and a control module, the control module is connected to the laser emission module to control the laser emission module to output laser energy P1 and laser energy P2; A CCD optical imaging module, movably mounted on the laser device body; A processor, arranged on the laser device body, and connected to the CCD optical imaging module and the control module.

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