System and method for cooling semiconductor device and heat transfer structure
By setting independent impact compartments on each die of the semiconductor device and adjusting the liquid coolant flow rate with the controller, different die temperature control problems are solved, and device performance and test efficiency are improved.
Patent Information
- Application Number
- CN202510130332.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-07-12
- Filing Date
- 2025-02-05
- Publication Date
- 2025-07-29
AI Technical Summary
The prior art is difficult to effectively control the temperature of different dies in semiconductor devices, resulting in reduced device performance and increased test time, especially when different dies generate different heat.
Using a multi-zone impact cooling system, personalized cooling of each die is achieved by setting an independent impact compartment on each die of the semiconductor device and controlling the flow rate of the liquid coolant according to the die temperature using the controller.
Independent temperature control of each die is achieved, device performance is improved and test time is reduced, while improving the efficiency and cooling capacity of the heat transfer structure.
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Figure CN120388954A_ABST
Abstract
Description
Technical Field
[0001] Embodiments of the present disclosure relate to systems and methods for cooling semiconductor devices and heat transfer structures. Background Art
[0002] With the advancement of semiconductor technology, there is an increasing demand for higher storage capacity, faster processing systems, higher performance, and lower costs. To meet these demands, the semiconductor industry continues to scale down the size of semiconductor devices, such as metal-oxide-semiconductor field-effect transistors (MOSFETs) including planar MOSFETs, fin field-effect transistors (FinFETs), gate-all-around field-effect transistors (GAAFETs), complementary field-effect transistors (CFETs), nanosheet transistors, nanowire transistors, multi-bridge-channel transistors, nanoribbon transistors, and other similar structures. Additionally, multiple dies can be packaged on a substrate to improve device performance. This scaling down increases the complexity of semiconductor manufacturing and packaging processes and also increases the difficulty of testing semiconductor devices. Summary of the Invention
[0003] Embodiments of the present disclosure provide a system for cooling a semiconductor device, comprising:
[0004] a first die and a second die, the first die and the second die being located on a substrate;
[0005] a heat transfer structure, the heat transfer structure comprising: a first compartment disposed above the first die; a second compartment disposed above the second die and separated from the first compartment; a first inlet pipe connected to the first compartment and configured to supply a first liquid coolant to the first compartment; and a second inlet pipe connected to the second compartment and configured to supply a second liquid coolant to the second compartment; and
[0006] a controller configured to control a first flow rate of the first liquid coolant based on a temperature of the first die and a second flow rate of the second liquid coolant based on a temperature of the second die.
[0007] Another embodiment of the present disclosure provides a heat transfer structure, comprising: a first compartment disposed above a first die; a first inlet pipe connected to the first compartment and configured to supply a first liquid coolant to the first compartment; a second compartment disposed above a second die and separated from the first compartment; and a second inlet pipe connected to the second compartment and configured to supply a second liquid coolant to the second compartment.
[0008] Yet another embodiment of the present disclosure provides a method for cooling a semiconductor device, comprising:
[0009] Place a heat transfer structure on a substrate, where: the substrate includes a first die and a second die; and the heat transfer structure includes a first compartment above the first die and a second compartment above the second die;
[0010] Obtain a first temperature of the first die;
[0011] Cool the first die with a first liquid coolant in the first compartment at a first flow rate based on the first temperature;
[0012] Obtain a second temperature on the second die; and
[0013] Cool the second die with a second liquid coolant in the second compartment at a second flow rate based on the second temperature, where the second flow rate is different from the first flow rate. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] Aspects of the present disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings.
[0015] Figure 1 、 Figure 2 、 Figure 5 、 Figure 6 、 Figure 12 and Figure 13 show partial cross-sectional views of a system for multi-zone impingement cooling of a semiconductor device according to some embodiments.
[0016] Figure 3 、 Figure 4 and Figures 7 to 11 show partial top views of a system for multi-zone impingement cooling of a semiconductor device according to some embodiments.
[0017] Figure 14 is a flowchart of a method for multi-zone impingement cooling of a semiconductor device according to some embodiments.
[0018] Figure 15 shows an example computer system in which various embodiments of the present disclosure may be implemented.
[0019] Exemplary embodiments will now be described with reference to the accompanying drawings. In the drawings, like reference numerals generally denote identical, functionally similar, and / or structurally similar elements. DETAILED DESCRIPTION
[0020] Numerous different embodiments or examples are provided below for implementing the different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, forming a first component above or on a second component may include embodiments in which the first and second components are in direct contact, and may also include embodiments in which additional components may be formed between the first and second components such that the first and second components may not be in direct contact. As used herein, forming a first component on a second component means that the first component is formed in direct contact with the second component. In addition, the present disclosure may repeat reference numerals and / or letters in various examples. This repetition is for the purpose of simplicity and clarity and does not in itself indicate a relationship between the embodiments and / or configurations being discussed.
[0021] In addition, for ease of description, spatially relative terms such as "below", "beneath", "lower", "above", "upper", etc. may be used herein to describe the relationship of one element or component to another as shown in the figures. In addition to the orientation shown in the figures, the spatially relative terms are intended to encompass different orientations of the device in use or operation. The device may be oriented otherwise (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein may be interpreted accordingly.
[0022] It should be noted that references in the specification to "an embodiment", "embodiments", "example embodiments", "exemplary", etc. mean that the described embodiment may include a particular component, structure, or characteristic, but each embodiment may not necessarily include the particular component, structure, or characteristic. In addition, these phrases do not necessarily refer to the same embodiment. Additionally, when a particular component, structure, or characteristic is described in connection with an embodiment, those skilled in the art will be able to implement such component, structure, or characteristic in connection with other embodiments (whether or not explicitly described).
[0023] It should be understood that the language or terminology used herein is for the purpose of description and not limitation, such that the terminology or language of this specification should be interpreted by those skilled in the relevant art in light of the teachings herein.
[0024] In some embodiments, the terms "about" and "substantially" may mean a given value that varies within 20% of the value (e.g., ±1%, ±2%, ±3%, ±4%, ±5%, ±10%, ±20% of the value). These values are merely examples and are not intended to be limiting. It should be understood that the terms "about" and "substantially" may refer to a percentage of the value as interpreted by those skilled in the relevant art in light of the teachings herein.
[0025] As the demand for lower power consumption, higher performance, and smaller semiconductor devices continues to increase, the size of semiconductor devices is continuously scaled down. Additionally, multiple dies (such as logic dies and memory dies) including various devices can be packaged on a substrate to improve device performance. The continuous scaling down of device size and the increasing demand for device performance may require various process improvements, which pose multiple challenges. For example, semiconductor devices generate heat during operation, which raises the temperature of the dies in the semiconductor device. A microchannel cold plate or a heat sink can be placed on the semiconductor device to remove heat and lower the die temperature. However, different dies of semiconductor devices on the same substrate may generate different amounts of heat and operate within different preferred temperature ranges. For example, a logic die may generate more heat and operate within a preferred temperature range from about 85°C to about 105°C. A memory die may generate less heat and operate within a preferred temperature range from about 65°C to about 90°C. For all dies on the same substrate, in the case of using a single microchannel cold plate or a single heat sink, different dies may operate at the same temperature, which may not be within the preferred temperature range of each die. As a result, dies operating outside their preferred temperature ranges may have reduced device performance, and the test time for all dies in the semiconductor device may increase. Additionally, a thermal interface material may be required between the die and the microchannel cold plate or the heat sink for heat conduction. The quality and performance of the thermal interface material can limit the cooling capacity of the microchannel cold plate and the heat sink.
[0026] Various embodiments in the present disclosure provide systems and methods for multi-zone impingement cooling of semiconductor devices or semiconductor packages. In some embodiments, the system can include a semiconductor device, a heat transfer structure located on the semiconductor device, and a controller configured to control the temperature of the semiconductor device using the heat transfer structure. The semiconductor device can include a first die and a second die located on a substrate. The heat transfer structure can include a first compartment located above the first die and a second compartment located above the second die and separated from the first compartment. A first inlet pumping pipe can be connected to the first compartment and configured to inject a first liquid coolant onto the first die in the first compartment. A second inlet pumping pipe can be connected to the second compartment and configured to inject a second liquid coolant onto the second die in the second compartment. The controller can be configured to control a first flow rate of the first liquid coolant based on the temperature of the first die and a second flow rate of the second liquid coolant based on the temperature of the second die. Through multi-zone impingement cooling, the temperatures of the first die and the second die can be controlled separately, which can improve the device performance of each die and reduce the test time of the semiconductor device. Additionally, by directly impinging the first die and the second die with the liquid coolant and without a thermal interface material, the heat transfer efficiency of the heat transfer structure can be improved, and the cooling capacity of the system can be enhanced.
[0027] Figure 1 , Figure 2 , Figure 5 , Figure 6 , Figure 12 and Figure 13 show partial cross-sectional views of various embodiments of a system 100 with multi-zone impingement cooling of a semiconductor device, according to some embodiments. Figure 3 , Figure 4 and Figures 7 to 11 show partial top views of various embodiments of a system 100 with multi-zone impingement cooling of a semiconductor device, according to some embodiments. In some embodiments, as Figures 1 to 13 shown, the system 100 may include a semiconductor device 101, a heat transfer structure 103, and a controller 130. In some embodiments, the system 100 may be configured to test the semiconductor device 101 cooled by the heat transfer structure 103 during a test process. In some embodiments, the semiconductor device 101 and the heat transfer structure 103 may be packaged together in a semiconductor package. Unless otherwise specified, Figures 1 to 13 the discussion of elements of the semiconductor device 101 and the heat transfer structure 103 with the same reference numerals applies to each other. And like reference numerals generally represent like, functionally similar, and / or structurally similar elements.
[0028] In some embodiments, as Figures 1 to 13 shown, the semiconductor device 101 may include dies 110-1 to 110-7. In some embodiments, each of the dies 110-1 to 110-7 may be a logic die, a high bandwidth memory (HBM) die, or other suitable die. In some embodiments, each of the dies 110-1 and 110-3 to 110-7 may be an HBM die, and the die 110-2 may be a logic die. Although Figures 1 to 13 shows seven dies in the semiconductor device 101, the semiconductor device 101 may have any number of dies. Additionally, the semiconductor device 101 may be included in a semiconductor package.
[0029] Refer to Figures 1 to 13, the semiconductor device 101 may further include an external connector 102, a substrate 104, a conductive connector 106, and an interposer 108. In some embodiments, the external connector 102 may be disposed on the bottom side of the substrate 104. In some embodiments, the external connector 102 may include a ball grid array (BGA) connector, solder balls, metal pillars, controlled collapse chip connection (C4) bumps, micro-bumps, or other suitable connectors. In some embodiments, the external connector 102 may include a conductive material such as solder, copper, aluminum, gold, nickel, silver, palladium, tin, and combinations thereof. In some embodiments, the external connector 102 may include a solderless conductive material. In some embodiments, the external connector 102 may be used to physically and electrically connect the substrate 104 to other external devices, packages, connection components, etc.
[0030] In some embodiments, the substrate 104 may include a printed circuit board (PCB), etc. In some embodiments, the substrate 104 may include electrical connectors (not shown) formed on opposite sides of the substrate 104. The electrical connectors on the opposite sides may be electrically interconnected through metal lines and vias (not shown) within the substrate 104. The electrical connectors, metal lines, and metal vias on the substrate 104 may electrically connect a single component on one side of the substrate 104 to another component on the opposite side of the substrate 104. For example, the substrate 104 may electrically connect the dies 110-1 to 110-7 and the conductive connector 106 and the interposer 108 on the top side of the substrate 104 to external components on the bottom side of the substrate 104 to the external connector 102. In some embodiments, the substrate 104 may provide mechanical support for components (such as dies 110-1 to 110-7, conductive connector 106, interposer 108, and / or heat transfer structure 103) encapsulated on the substrate 104.
[0031] In some embodiments, the conductive connector 106 may be disposed on the top side of the substrate 104. In some embodiments, the conductive connector 106 may include C4 bumps, micro-bumps, BGA connectors, solder balls, metal pillars, or other suitable connectors. In some embodiments, the external connector 102 and the conductive connector 106 may include the same connectors or different connectors. In some embodiments, the conductive connector 106 may include a conductive material such as solder, copper, aluminum, gold, nickel, silver, palladium, tin, and combinations thereof. In some embodiments, the conductive connector 106 may include a solderless conductive material. In some embodiments, the external connector 102 and the conductive connector 106 may include the same conductive material or different conductive materials. In some embodiments, the conductive connector 106 may be used to physically and electrically connect the dies 110-1 to 110-7 to the substrate 104 through the interposer 108.
[0032] In some embodiments, the interposer 108 may bond the dies 110-1 to 110-7 to the conductive connectors 106 on the substrate 104. In some embodiments, the interposer 108 may provide electrical connection routing, power distribution, and other suitable functions. For example, the interposer 108 may electrically connect the dies 110-1 to 110-7 to the conductive connectors 106 and then to external components on the bottom side of the substrate 104. In some embodiments, the interposer 108 may include redistribution circuit structures, vias, conductive connectors, and other suitable components, which are not shown in detail for clarity.
[0033] In some embodiments, as Figures 1 to 4 shown, the heat transfer structure 103 may include an impingement chamber 112, a seal 114, an inlet nozzle 116, an outlet nozzle 118, a manifold 126, an inlet pumping conduit 120, a control valve 122, an outlet pumping conduit 124, and a liquid coolant 128. In some embodiments, the heat transfer structure 103 may be placed on the semiconductor device 101 to cool the dies 110-1 to 110-7. In some embodiments, the liquid coolant 128 may be delivered through the control valve 122, the inlet pumping conduit 120, and the inlet nozzle 116 to the impingement chamber 112 above the dies 110-1 to 110-7. The liquid coolant 128 may remove the heat generated by the dies 110-1 to 110-7 through the outlet nozzle 118 and the outlet pumping conduit 124. In some embodiments, the liquid coolant 128 may include water, liquid nitrogen, or other suitable liquid coolants. In some embodiments, the manifold 126 may provide physical support and connection for the inlet pumping conduit 120 and the outlet pumping conduit 124. In some embodiments, the manifold 126 may include metal, plastic, or other suitable materials.
[0034] In some embodiments, each impingement chamber 112 may be disposed above each die 110-1 to 110-7. In some embodiments, the impingement chamber 112 may hold a liquid coolant 128 between the dies 110-1 to 110-7 and the inlet nozzle 116 and the outlet nozzle 118. In some embodiments, the impingement chamber 112 may have a space 112s for the liquid coolant 128 along the Z-axis above the top surface of the dies 110-1 to 110-7. In some embodiments, the space 112s may be in the range from about 0.5 mm to about 2 mm. In some embodiments, based on the heat generated by the dies 110-1 to 110-7, the impingement chambers 112 above different dies may have different spaces 112s. If the space 112s is less than about 0.5 mm, the heat generated by the dies 110-1 to 110-7 may not be effectively removed, and the dies 110-1 to 110-7 may not operate within their preferred temperature range. If the space 112s is greater than about 2 mm, the heat transfer efficiency may not be further improved, but the manufacturing cost may increase.
[0035] In some embodiments, the seal 114 may surround each impingement chamber 112 to seal the liquid coolant 128 between the corresponding impingement chamber 112 and the dies 110-1 to 110-7. In some embodiments, the seal 114 may be removable. In some embodiments, the seal 114 may include rubber or other suitable materials. In some embodiments, the controller 130 may control a motor (not shown) in the heat transfer structure 103 to move the heat transfer structure 103 towards the semiconductor device 101, apply a force on the seal 114, and seal the liquid coolant 128 within the impingement chamber 112, thereby avoiding leakage of the liquid coolant 128.
[0036] In some embodiments, the inlet nozzle 116 and the outlet nozzle 118 may be disposed within the impingement chamber 112 above the dies 110-1 to 110-7. The controller 130 may control the inlet nozzle 116 to directly inject the liquid coolant 128 onto the top surfaces of the dies 110-1 to 110-7. The controller 130 may control an additional control valve (not shown) on the outlet pumping pipe 124 to remove the liquid coolant 128 from the impingement chamber 112 through the outlet nozzle 118 and the outlet pumping pipe 124. In some embodiments, the distance 112d along the Z-axis between the top surfaces of the dies 110-1 to 110-7 and the inlet nozzle 116 and the outlet nozzle 118 may be in the range from about 0.1 mm to about 2 mm. If the distance 112d is less than about 0.1 mm, the heat generated by the dies 110-1 to 110-7 may not be effectively removed, and the dies 110-1 to 110-7 may not operate within their preferred temperature range. If the distance 112d is greater than about 2 mm, the heat transfer efficiency may not be further improved, but the manufacturing cost may increase. In some embodiments, the ratio between the distance 112d and the space 112s may be in the range from about 0.5 to about 1 to balance the pressure drop and the flow uniformity of the liquid coolant 128. If the ratio is less than about 0.5, the pressure drop may increase, which may require a larger pump to circulate the liquid coolant 128 and may reduce the structural reliability of the heat transfer structure 103. If the ratio is greater than about 1, the injected liquid coolant 128 may be non-uniform, which may limit the cooling capacity of the liquid coolant 128. In some embodiments, based on the heat generated by the dies 110-1 to 110-7, the inlet nozzle 116 and the outlet nozzle 118 above different dies may have different distances 112d. In some embodiments, the distances 112d of the inlet nozzle 116 and the outlet nozzle 118 in the same impingement chamber 112 may be controlled separately. In some embodiments, the sizes of the inlet nozzle 116 and the outlet nozzle 118 may depend on the physical design of the heat transfer structure 103. In some embodiments, the lengths of the inlet nozzle 116 and the outlet nozzle 118 may be in the range from about 0.1 mm to about 1 mm. In some embodiments, the diameters of the inlet nozzle 116 and the outlet nozzle 118 may be in the range from about 0.1 mm to about 1 mm. In some embodiments, the distance between the inlet nozzle 116 and the outlet nozzle 118 (which may be referred to herein as "inlet / outlet pitch") may be in the range from about 0.5 mm to about 2 mm to balance the pressure drop and the flow uniformity of the liquid coolant 128. In some embodiments, the ratio between the inlet / outlet pitch and the diameter may be in the range from about 2 to about 5. If the ratio is less than about 2, the pressure drop of the liquid coolant 128 may increase. If the ratio is greater than about 5, the flow uniformity of the liquid coolant 128 may decrease, and the thermal resistance of the heat transfer structure 103 may increase.
[0037] In some embodiments, each impact compartment 112 may be connected to a single inlet pumping pipe 120. The inlet pumping pipe 120 may deliver a liquid coolant 128 to each impact compartment 112. In some embodiments, each inlet pumping pipe 120 may have a single control valve 122 to control the flow rate of the liquid coolant 128. In some embodiments, the controller 130 may be connected to the semiconductor device 101 and the heat transfer structure 103 to control the operation and temperature of the dies 110-1 to 110-7. Figure 15 Embodiments of the controller 130 are described in detail. In some embodiments, each of the dies 110-1 to 110-7 may include a temperature sensor (not shown), and the controller 130 may obtain the temperatures of the dies 110-1 to 110-7 from the temperature sensors. In some embodiments, the controller 130 may control the flow rate of the liquid coolant 128 in the inlet pumping pipe 120 by using the control valve 122. In some embodiments, the controller 130 may adjust the flow rate in each inlet pumping pipe 120 based on the temperature of each of the dies 110-1 to 110-7. For example, die 110-1 may have a first temperature, and die 110-2 may have a second temperature different from the first temperature. Based on the first temperature and the second temperature of dies 110-1 and 110-2 and a preferred temperature range, the controller 130 may adjust a first flow rate of the liquid coolant 128 supplied to die 110-1 and a second flow rate of the liquid coolant 128 supplied to die 110-2. In some embodiments, the first flow rate may be different from the second flow rate.
[0038] In some embodiments, as Figure 1 shown, each impact compartment 112 may be connected to a single outlet pumping pipe 124. The outlet pumping pipe 124 may remove the liquid coolant 128 from each impact compartment 112. In some embodiments, as Figure 2 shown, all the impact compartments 112 may be connected to a single outlet pumping pipe 124 to remove the liquid coolant 128. In some embodiments, as Figure 3 shown, the inlet pumping pipe 120 may be arranged in parallel with the outlet pumping pipe 124. The inlet pumping pipe 120 may extend above a first side (e.g., the right side) of the substrate 104, and the outlet pumping pipe 124 may extend above a second side (e.g., the left side) of the substrate 104 opposite to the first side. In some embodiments, as Figure 4 shown, the inlet pumping pipe 120 may be arranged perpendicular to the outlet pumping pipe 124. The inlet pumping pipe 120 may extend above a first side (e.g., the right side) of the substrate 104, and the outlet pumping pipe 124 may extend above a second side (e.g., the lower side) of the substrate 104 adjacent to the first side.
[0039] In some embodiments, as Figures 5 to 11 shown, the heat transfer structure 103 may further include an evacuation pumping pipe 132. In some embodiments, each impact compartment 112 may be connected to a single evacuation pumping pipe 132. The evacuation pumping pipe 132 may evacuate the air in the impact compartment 112, reduce the pressure in the impact compartment 112, and thus reduce the boiling point of the liquid coolant 128 in the impact compartment 12. In some embodiments, at a low pressure in the impact compartment 112, the heat generated by the cores 110-1 to 110-7 may be removed by the liquid phase and gas phase of the liquid coolant 128. In some embodiments, the controller 130 may utilize the evacuation pumping pipe 132 to adjust the pressure in the impact compartment 112 to improve the heat transfer efficiency.
[0040] In some embodiments, as Figure 5 , Figure 7 and Figure 8 shown, the evacuation pumping pipe 132 may be arranged parallel and adjacent to the inlet pumping pipe 120. In some embodiments, as Figure 5 and Figure 7 shown, the outlet pumping pipe 124 may be arranged parallel to the inlet pumping pipe 120. The inlet pumping pipe 120 and the evacuation pumping pipe 132 may extend above the first side (e.g., the right side) of the substrate 104, and the outlet pumping pipe 124 may extend above the second side (e.g., the left side) of the substrate 104 opposite to the first side. In some embodiments, as Figure 8 shown, the outlet pumping pipe 124 may be arranged perpendicular to the inlet pumping pipe 120. The inlet pumping pipe 120 and the evacuation pumping pipe 132 may extend above the first side (e.g., the right side) of the substrate 104, and the outlet pumping pipe 124 may extend above the second side (e.g., the lower side) of the substrate 104 adjacent to the first side.
[0041] In some embodiments, as Figure 9 and Figure 10 shown, the evacuation pumping pipe 132 may be arranged parallel and adjacent to the outlet pumping pipe 124. In some embodiments, as Figure 9 shown, the inlet pumping pipe 120 may be arranged parallel to the outlet pumping pipe 124. The inlet pumping pipe 120 may extend above the first side (e.g., the right side) of the substrate 104, and the outlet pumping pipe 124 and the evacuation pumping pipe 132 may extend above the second side (e.g., the left side) of the substrate 104 opposite to the first side. In some embodiments, as Figure 10As shown, the inlet pumping pipe 120 can be arranged perpendicular to the outlet pumping pipe 124. The inlet pumping pipe 120 can extend above the first side (e.g., the right side) of the substrate 104, and the outlet pumping pipe 124 and the evacuation pumping pipe 132 can extend above the second side (e.g., the lower side) of the substrate 104 adjacent to the first side.
[0042] In some embodiments, as Figure 11 shown, the evacuation pumping pipe 132 can be arranged perpendicular to the inlet pumping pipe 120 and the outlet pumping pipe 124. As Figure 11 shown, the inlet pumping pipe 120 can extend above the first side (e.g., the right side) of the substrate 104, the outlet pumping pipe 124 can extend above the second side (e.g., the left side) of the substrate 104 opposite to the first side, and the evacuation pumping pipe 132 can extend above the third side (e.g., the lower side) of the substrate 104 adjacent to the first side and the second side. In some embodiments, the evacuation pumping pipe 132 can be combined with the inlet pumping pipe 120. Thus, the inlet pumping pipe 120 can be first used to evacuate the air in the impact chamber 112, and then used to convey the liquid coolant 128 to the impact chamber 112. In some embodiments, the evacuation pumping pipe 132 can be combined with the outlet pumping pipe 124. Thus, the outlet pumping pipe 124 can be first used to evacuate the air in the impact chamber 112, and then used to remove the liquid coolant 128 from the impact chamber 112.
[0043] In some embodiments, as Figure 12 and Figure 13 shown, the heat transfer structure 103 can further include a housing structure 136 located above the manifold 126 and a spring 134 connecting the housing structure 136 to the manifold 126. In some embodiments, as Figure 12 shown, each of the dies 110-1 to 110-7 can have a single manifold 126 disposed thereon. Each manifold 126 can be connected to the housing structure 136 by a single spring 134. By the spring 134 on the manifold 126, a suitable force can be applied to each manifold 126 to improve the seal between the impact chamber 112 and the dies 110-1 to 110-7, thus avoiding leakage of the liquid coolant 128. In some embodiments, as Figure 13 shown, the housing structure 136 can include additional structures (e.g., legs or covers) extending around the manifold 126. In some embodiments, the additional structures can support and protect the manifold 126, the inlet pumping pipe 120, and the outlet pumping pipe 124. In some embodiments, the additional structures can or can not contact the semiconductor device 101. In some embodiments, one of the manifolds 126 can be disposed on a local hot spot of the dies 110-1 to 110-7 to improve the heat transfer efficiency.
[0044] Figure 14 is a flowchart of a multi-zone impingement cooling method 1400 for a semiconductor device 101 according to some embodiments. The method 1400 may not be limited to the semiconductor device 101 and may be applied to other devices that would benefit from multi-zone impingement cooling. Additional operations may be performed between the various operations of the method 1400, and the additional operations may be omitted solely for clarity and ease of description. Additional operations may be provided before, during, and / or after the method 1400; one or more of these additional operations are briefly described herein. Further, it may not be necessary to perform all the operations to implement the disclosure provided herein. Additionally, some operations may be performed simultaneously or in a different order than Figure 14 shown. In some embodiments, one or more other operations may be performed in addition to or instead of the currently described operations. For illustrative purposes, the operations Figures 1 to 13 shown will be described with reference to the example embodiments Figure 14 shown.
[0045] Referring Figure 14 , the method 1400 begins with operation 1410 and a process of placing a heat transfer structure including a first impingement compartment and a second impingement compartment on a substrate including a first die and a second die. The first compartment may be placed above the first die, and the second compartment may be placed above the second die. For example, as Figures 1 to 13 shown, the controller 130 may control a motor (not shown) in the heat transfer structure 103 to move and place the heat transfer structure 103 on the substrate 104. The substrate 104 may include dies 110-1 to 110-7. The heat transfer structure 103 may include impingement compartments 112, and each impingement compartment 112 may be placed above each of the dies 110-1 to 110-7. In some embodiments, during testing of the semiconductor device 101, the heat transfer structure 103 may be placed on the semiconductor device 101 by a motor controlled by the controller 130. For example, the controller 130 may control a pick-and-place (PnP) arm (not shown) to place the semiconductor device 101 in a test socket (not shown). The controller 130 may control the motor to move the heat transfer structure 103 to the test socket and place the heat transfer structure 102 on the semiconductor device 101. A force may be applied to the heat transfer structure 103 to avoid leakage of the liquid coolant 128. The controller 130 may open the valve 122 and deliver the liquid coolant 128 to the impingement compartments 112 above each of the dies 110-1 to 110-7. After the semiconductor device 101 begins operation or testing, the dies 110-1 to 110-7 may generate heat. In some embodiments, the heat transfer structure 103 and the semiconductor device 101 may be encapsulated in a semiconductor package, and the heat transfer structure 103 may be placed on top of the semiconductor device 101.
[0046] Reference Figure 14 , in operation 1420, a first temperature on the first die is obtained. For example, as Figures 1 to 13 shown, the controller 130 may obtain the temperature of die 110-1. In some embodiments, die 110-1 may include a temperature sensor (not shown) to measure the temperature of die 110-1 during operation. In some embodiments, the controller 130 may obtain the temperature of die 110-1 from the temperature sensor. In some embodiments, the temperature sensor may measure a temperature profile across the top surface of die 110-1 having a local hot spot distribution, and the controller 130 may obtain the temperature profile. In some embodiments, the controller 130 may obtain the power level of die 110-1 and generate the temperature of die 110-1 based on that power level instead of directly obtaining the temperature of die 110-1.
[0047] Reference Figure 14 , in operation 1430, the first die is cooled with a first liquid coolant in a first compartment at a first flow rate based on the first temperature. For example, as Figures 1 to 13 shown, die 110-1 may be cooled by the liquid coolant 128 in the impingement compartment 112 disposed thereon. Based on the temperature of die 110-1, the controller 130 may control the first flow rate of the liquid coolant 128 delivered to die 110-1 through the control valve 122. The liquid coolant 128 in the impingement compartment 112 may remove the heat generated by die 110-1 during operation or testing and maintain the temperature of die 110-1 within a preferred temperature or preferred temperature range. For example, a logic die may operate within a preferred temperature range from about 85°C to about 105°C. A memory die may operate within a preferred temperature range from about 65°C to about 90°C.
[0048] In some embodiments, as Figures 5 to 11 shown, the heat transfer structure 103 may further include a drain pumping pipe 132, and the impingement compartment 112 above die 110-1 may be connected to a single drain pumping pipe 132. The drain pumping pipe 132 may evacuate the air in the impingement compartment 112, reduce the pressure in the impingement compartment 112, and thus lower the boiling point of the liquid coolant 128 in the impingement compartment 12. In some embodiments, with a lower pressure in the impingement compartment 112, the heat generated by die 110-1 may be removed by both the liquid and vapor phases of the liquid coolant 128. In some embodiments, the controller 130 may adjust the pressure in the impingement compartment 112 using the drain pumping pipe 132 to improve the heat transfer efficiency. In some embodiments, as Figures 1 to 13As shown, the space 112s of the impact compartment 112 and the distance 112d between the top surfaces of the dies 110-1 to 110-7 and the inlet nozzle 116 and the outlet nozzle 118 can be adjusted to further improve the heat transfer efficiency.
[0049] Referring Figure 14 , in operation 1440, a second temperature on the second die is obtained. For example, as Figures 1 to 13 shown, the controller 130 can obtain the temperature of die 110-2. In some embodiments, die 110-2 can include a temperature sensor (not shown) to measure the temperature of die 110-2 during operation. In some embodiments, the controller 130 can obtain the temperature of die 110-2 from the temperature sensor. In some embodiments, the temperature sensor can measure the temperature profile across the top surface of die 110-2 having a local hot spot distribution, and the controller 130 can obtain the temperature profile. In some embodiments, the controller 130 can obtain the power level of die 110-2 and generate the temperature of die 110-2 based on that power level instead of directly obtaining the temperature of die 110-2.
[0050] Referring Figure 14 , in operation 1450, the second die is cooled with a second liquid coolant in a second compartment at a second flow rate based on the second temperature. For example, as Figures 1 to 13As shown, the die 110-2 can be cooled by a liquid coolant 128 disposed in an impact chamber 112 thereon. Based on the temperature of the die 110-2, the controller 130 can control a second flow rate of the liquid coolant 128 delivered to the die 110-2 through a control valve 122. The liquid coolant 128 in the impact chamber 112 can remove heat generated by the die 110-2 during operation or testing and maintain the temperature of the die 110-2 within a preferred temperature or a preferred temperature range. For example, a logic die can operate within a preferred temperature range from about 85°C to about 105°C. A memory die can operate within a preferred temperature range from about 65°C to about 90°C. In some embodiments, the die 110-1 can be a memory die, and the die 110-2 can be a logic die. The preferred temperatures and preferred temperature ranges of the dies 110-1 and 110-2 can be different. Accordingly, the second flow rate of the liquid coolant 128 delivered to the die 110-2 can be different from a first flow rate of the liquid coolant 28 delivered to the die 110-1. In some embodiments, to further reduce the temperature of the die 110-2 after reaching the maximum flow rate of the liquid coolant 128 delivered to the die 110-2, the controller 130 can continue to adjust the first flow rate of the liquid coolant 28 delivered to the die 110-1. Reducing the temperature of the die 110-1 adjacent to the die 110-2 can further reduce the temperature of the die 110-2. Similarly, after reaching the maximum flow rate of the liquid coolant 128 delivered to the die 110-1, the temperature of the die 110-1 can be further reduced.
[0051] In some embodiments, similar to the die 110-1, as Figures 5 to 11 shown, the impact chamber 112 over the die 110-2 can be connected to a single evacuation pumping pipe 132 to improve heat transfer efficiency. In some embodiments, as Figures 1 to 13 shown, the space 112s of the impact chamber 112 and the distance 112d between the top surfaces of the dies 110-1 to 110-7 and the inlet nozzle 116 and the outlet nozzle 118 can be adjusted to further improve heat transfer efficiency. In some embodiments, by adjusting the control valve 122, the space 112s, and the distance 112d, the temperatures of the dies 110-1 to 110-7 can be actively controlled during a test or an operation process. By individually controlling the temperatures of the dies 110-1 to 110-7 within corresponding preferred temperature ranges, the device performance of the dies 110-1 to 110-7 can be improved, and the test time of the semiconductor device 101 can be reduced.
[0052] In some embodiments, after testing the semiconductor device 101, the valve 122 can be closed. The liquid coolant 128 retained in the shock compartment 112 can be removed by a vacuuming operation. The heat transfer structure 103 can be lifted from the semiconductor device 101, and the semiconductor device 101 can be removed from the test socket for further operation. For clarity, these operations are not described in detail.
[0053] Figure 15 FIG. is a diagram of an exemplary computer system 1500 according to some embodiments, in which various embodiments of the present disclosure can be implemented. The computer system 1500 can be any well-known computer capable of performing the functions and operations described herein. By way of example and not limitation, the computer system 1500 is capable of controlling the heat transfer structure 103 for multi-zone shock cooling of the die 110 during testing of the semiconductor device 101. The computer system 1500 can be an example of the controller 130, for example, to perform one or more operations in the method 1400, which describes an exemplary method for multi-zone shock cooling of the dies 110-1 to 110-7 during testing of the semiconductor device 101.
[0054] The computer system 1500 includes one or more processors (also referred to as central processing units or CPUs), such as the processor 1504. The processor 1504 is connected to a communication infrastructure or bus 1506. The computer system 1500 also includes input / output devices 1503, such as monitors, keyboards, pointing devices, etc., which communicate with the communication infrastructure or bus 1506 through an input / output interface 1502. System control tools can receive instructions via the input / output devices 1503 to implement the functions and operations described herein, such as Figure 14 the method 1400. The computer system 1500 also includes a main memory or primary memory 1508, such as random access memory (RAM). The main memory 1508 can include one or more levels of cache. Control logic (e.g., computer software) and / or data are stored in the main memory 1508. In some embodiments, the control logic (e.g., computer software) and / or data can include one or more operations described above with respect to Figure 14 the method 1400.
[0055] The computer system 1500 can also include one or more auxiliary storage devices or memories 1510. The auxiliary memory 1510 can include, for example, a hard disk drive 1512 and / or a removable storage device or drive 1514. The removable storage drive 1514 can be a floppy disk drive, a tape drive, an optical disk drive, an optical storage device, a tape backup device, and / or any other storage device / drive.
[0056] The removable storage drive 1514 can interact with the removable storage unit 1518. The removable storage unit 1518 includes a computer-usable or readable storage device on which computer software (control logic) and / or data are stored. The removable storage unit 1518 can be a floppy disk, a magnetic tape, an optical disk, a DVD, an optical storage disk, and / or any other computer data storage device. The removable storage drive 1514 reads from and / or writes to the removable storage unit 1518 in a well-known manner.
[0057] In some embodiments, the secondary storage 1510 can include other devices, means, or other methods for allowing the computer system 1500 to access computer programs and / or other instructions and / or data. Such devices, means, or other methods can include, for example, the removable storage unit 1522 and the interface 1520. Examples of the removable storage unit 1522 and the interface 1520 can include a program cartridge and a cartridge interface (such as those found in video game devices), a removable memory chip (such as an EPROM or a PROM) and an associated socket, a memory stick and a USB port, a memory card and an associated memory card slot, and / or any other removable storage unit and an associated interface. In some embodiments, the secondary storage 1510, the removable storage unit 1518, and / or the removable storage unit 1522 can include one or more operations described above with respect to Figure 14 method 1400.
[0058] The computer system 1500 can also include a communication or network interface 1524. The communication interface 1524 enables the computer system 1500 to communicate and interact with any combination of remote devices, remote networks, remote entities, etc. (collectively referred to by reference numeral 1528). For example, the communication interface 1524 can allow the computer system 1500 to communicate with the remote device 1528 via the communication path 1526, which can be wired and / or wireless and can include any combination of a LAN, a WAN, the Internet, etc. Control logic and / or data can be transmitted to and from the computer system 1500 via the communication path 1526.
[0059] The operations in the foregoing embodiments can be implemented in various configurations and architectures. Thus, some or all of the operations in the foregoing embodiments (e.g., Figure 14The method 1400) can be implemented in hardware, software, or both. In some embodiments, a tangible device or article of manufacture that includes a tangible computer-usable or readable medium having control logic (software) stored thereon is also referred to herein as a computer program product or program storage device. This includes, but is not limited to, computer system 1500, main memory 1508, auxiliary memory 1510, and removable storage units 1518 and 1522, as well as tangible articles of manufacture embodying any combination of the foregoing. When executed by one or more data processing devices, such as computer system 1500, this control logic causes these data processing devices to operate as described herein.
[0060] Various embodiments in the present disclosure provide systems and methods for multi-zone impingement cooling of a semiconductor device 101. In some embodiments, system 100 may include a semiconductor device 101, a heat transfer structure 103 located on the semiconductor device 101, and a controller 130 configured to control the temperature of the semiconductor device 101 using the heat transfer structure 103. The semiconductor device 101 may include a first die 110-1 and a second die 110-2 located on a substrate 104. The heat transfer structure 103 may include a first compartment 112 located above the first die 110-1 and a second compartment 112 located above the second die 110-2 and separated from the first compartment 122. A first inlet pumping pipe 120 may be connected to the first compartment 112 and configured to inject a liquid coolant 128 onto the first die 110-1 in the first compartment 112. A second inlet pumping pipe 120 may be connected to the second compartment 112 and configured to inject the liquid coolant 128 onto the second die 110-2 in the second compartment 112. The controller 130 may be configured to control a first flow rate of the liquid coolant 128 based on the temperature of the first die 110-1 and a second flow rate of the liquid coolant 128 based on the temperature of the second die 110-2. Through multi-zone impingement cooling, the temperatures of the first die 110-1 and the second die 110-2 can be controlled separately, which can improve the device performance of each die and can reduce the test time of the semiconductor device 101. In addition, by directly impinging the liquid coolant 128 on the first die 110-1 and the second die 110-2 without a thermal interface material, the heat transfer efficiency of the heat transfer structure 103 can be improved and the cooling capacity of the system 100 can be increased.
[0061] In some embodiments, the system includes a first die and a second die located on a substrate, a heat transfer structure, and a controller. The heat transfer structure includes a first compartment disposed above the first die, a second compartment disposed above the second die and separated from the first compartment, a first inlet pipe connected to the first compartment and configured to supply a first liquid coolant to the first compartment, and a second inlet pipe connected to the second compartment and configured to supply a second liquid coolant to the second compartment. The controller is configured to control a first flow rate of the first liquid coolant based on the temperature of the first die and control a second flow rate of the second liquid coolant based on the temperature of the second die.
[0062] In some embodiments, the system further includes: a first valve located on the first inlet pipe and configured to control the first flow rate of the first liquid coolant; and a second valve located on the second inlet pipe and configured to control the second flow rate of the second liquid coolant, wherein the second flow rate is different from the first flow rate.
[0063] In some embodiments, the system further includes: a first nozzle connected to the first inlet pipe and configured to inject the first liquid coolant into the first compartment and onto the first die; and a second nozzle connected to the second inlet pipe and configured to inject the second liquid coolant into the second compartment and onto the second die.
[0064] In some embodiments, the system further includes: a first outlet pipe connected to the first compartment and configured to remove the first liquid coolant from the first compartment; and a second outlet pipe connected to the second compartment and configured to remove the second liquid coolant from the second compartment.
[0065] In some embodiments, the system further includes: a first outlet pipe connected to the first compartment and configured to remove the first liquid coolant from the first compartment; and a second outlet pipe connected to the second compartment and configured to remove the second liquid coolant from the second compartment, wherein: the first inlet pipe is parallel to the first outlet pipe; the second inlet pipe is parallel to the second outlet pipe; the first inlet pipe and the second inlet pipe extend above a first side of the substrate; and the first outlet pipe and the second outlet pipe extend above a second side of the substrate opposite the first side.
[0066] In some embodiments, the system further includes: a first outlet pipe connected to the first compartment and configured to remove the first liquid coolant from the first compartment; and a second outlet pipe connected to the second compartment and configured to remove the second liquid coolant from the second compartment, wherein: the first inlet pipe is perpendicular to the first outlet pipe; the second inlet pipe is perpendicular to the second outlet pipe; the first inlet pipe and the second inlet pipe extend above a first side of the substrate; and the first outlet pipe and the second outlet pipe extend above a second side of the substrate adjacent to the first side.
[0067] In some embodiments, the system further includes: a first detachable seal surrounding the first compartment and configured to seal the first liquid coolant between the first compartment and the first die; and a second detachable seal surrounding the second compartment and configured to seal the second liquid coolant between the second compartment and the second die.
[0068] In some embodiments, the system further includes: a first evacuation pipe connected to the first compartment and configured to adjust a first pressure in the first compartment; and a second evacuation pipe connected to the second compartment and configured to adjust a second pressure in the second compartment.
[0069] In some embodiments, the system further includes: a first evacuation pipe connected to the first compartment and configured to adjust a first pressure in the first compartment; and a second evacuation pipe connected to the second compartment and configured to adjust a second pressure in the second compartment, wherein: the first inlet pipe is parallel to the first evacuation pipe; and the second inlet pipe is parallel to the second evacuation pipe.
[0070] In some embodiments, the system further includes: a first evacuation pipe connected to the first compartment and configured to adjust a first pressure in the first compartment; and a second evacuation pipe connected to the second compartment and configured to adjust a second pressure in the second compartment, wherein: the first inlet pipe is perpendicular to the first evacuation pipe; and the second inlet pipe is perpendicular to the second evacuation pipe.
[0071] In some embodiments, the first liquid coolant and the second liquid coolant include water.
[0072] In some embodiments, the system further includes a housing structure, a first spring connecting the first compartment to the housing structure, and a second spring connecting the second compartment to the housing structure.
[0073] In some embodiments, the heat transfer structure includes a first compartment disposed above a first die, a first inlet conduit connected to the first compartment and configured to supply a first liquid coolant to the first compartment, a second compartment disposed above a second die and separated from the first compartment, and a second inlet conduit connected to the second compartment and configured to supply a second liquid coolant to the second compartment.
[0074] In some embodiments, the heat transfer structure further includes: a nozzle connected to the first inlet conduit and configured to inject the first liquid coolant into the first compartment and onto the first die, wherein: the first compartment has a space above the first die, the nozzle and the first die are separated by a distance, and the ratio between the distance and the space is in the range from about 0.5 to about 1.
[0075] In some embodiments, the heat transfer structure further includes: a first nozzle connected to the first inlet conduit and configured to inject the first liquid coolant into the first compartment and onto the first die; a first outlet conduit connected to the first compartment and configured to remove the first liquid coolant from the first compartment; and a second nozzle connected to the first outlet conduit and configured to remove the first liquid coolant, wherein the pitch between the first nozzle and the second nozzle is in the range from about 0.5 mm to about 2 mm.
[0076] In some embodiments, the heat transfer structure further includes: a first nozzle connected to the first inlet conduit and configured to inject the first liquid coolant into the first compartment and onto the first die; a first outlet conduit connected to the first compartment and configured to remove the first liquid coolant from the first compartment; and a second nozzle connected to the first outlet conduit and configured to remove the first liquid coolant, wherein the pitch between the first nozzle and the second nozzle is in the range from about 0.5 mm to about 2 mm, wherein the first nozzle and the second nozzle have diameters, and wherein the ratio between the diameter and the pitch is in the range from about 2 to about 5.
[0077] In some embodiments, a method includes placing a heat transfer structure on a substrate. The substrate includes a first die and a second die. The heat transfer structure includes a first compartment above the first die and a second compartment above the second die. The method further includes obtaining a first temperature of the first die, cooling the first die with a first liquid coolant in the first compartment at a first flow rate based on the first temperature, obtaining a second temperature on the second die, and cooling the second die with a second liquid coolant in the second compartment at a second flow rate based on the second temperature. The second flow rate is different from the first flow rate.
[0078] In some embodiments, the method further includes controlling the first flow rate using a first valve and controlling the second flow rate using a second valve.
[0079] In some embodiments, cooling the first die using the first liquid coolant includes: opening a first valve on a first inlet conduit connected to the first compartment to deliver the first liquid coolant; injecting the first liquid coolant onto the first die using a first nozzle in the first compartment; and opening a second valve on a first outlet conduit connected to the first compartment to remove the first liquid coolant.
[0080] In some embodiments, the method further includes moving the heat transfer structure toward the substrate to seal the first liquid coolant between the first compartment and the first die using a first detachable seal and to seal the second liquid coolant between the second compartment and the second die using a second detachable seal.
[0081] It should be understood that the detailed description section, rather than the abstract section of the disclosure, is intended to interpret the claims. The abstract of the disclosure section may set forth one or more, but not all, possible embodiments contemplated by the inventors and thus is not intended to limit the appended claims in any way.
[0082] The features of several embodiments are outlined above so that those skilled in the art may better understand aspects of the present disclosure. Those skilled in the art should understand that they may readily use the present disclosure as a basis to design or modify other processes and structures for carrying out the same purposes and / or achieving the same advantages as the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructs do not depart from the spirit and scope of the present disclosure and that various changes, substitutions, and alterations can be made therein without departing from the spirit and scope of the present disclosure.
Claims
1. A system for cooling a semiconductor device, comprising: A first die and a second die, the first die and the second die being located on a substrate; A heat transfer structure, comprising: A first compartment, disposed above the first die; A second compartment, disposed above the second die and separated from the first compartment; A first inlet pipe, connected to the first compartment and configured to supply a first liquid coolant to the first compartment; and A second inlet pipe, connected to the second compartment and configured to supply a second liquid coolant to the second compartment; and A controller, configured to control a first flow rate of the first liquid coolant based on the temperature of the first die and a second flow rate of the second liquid coolant based on the temperature of the second die.
2. The system for cooling a semiconductor device according to claim 1, further comprising: A first valve, located on the first inlet pipe and configured to control the first flow rate of the first liquid coolant; And A second valve, located on the second inlet pipe and configured to control the second flow rate of the second liquid coolant, wherein the second flow rate is different from the first flow rate.
3. The system for cooling a semiconductor device according to claim 1, further comprising: A first nozzle, connected to the first inlet pipe and configured to inject the first liquid coolant into the first compartment and onto the first die; And A second nozzle, connected to the second inlet pipe and configured to inject the second liquid coolant into the second compartment and onto the second die.
4. The system for cooling a semiconductor device according to claim 1, further comprising: A first outlet pipe, connected to the first compartment and configured to remove the first liquid coolant from the first compartment; And A second outlet pipe, connected to the second compartment and configured to remove the second liquid coolant from the second compartment.
5. The system for cooling a semiconductor device according to claim 4, wherein: The first inlet pipe is parallel to the first outlet pipe; The second inlet pipe is parallel to the second outlet pipe; The first inlet pipe and the second inlet pipe extend above a first side of the substrate; and The first outlet pipe and the second outlet pipe extend above a second side of the substrate opposite to the first side.
6. The system for cooling a semiconductor device according to claim 4, wherein: The first inlet pipe is perpendicular to the first outlet pipe; The second inlet pipe is perpendicular to the second outlet pipe; The first inlet pipe and the second inlet pipe extend above a first side of the substrate; and The first outlet pipe and the second outlet pipe extend above a second side of the substrate adjacent to the first side.
7. The system for cooling a semiconductor device according to claim 1, further comprising: A first detachable seal, surrounding the first compartment and configured to seal the first liquid coolant between the first compartment and the first die; And A second detachable seal, surrounding the second compartment and configured to seal the second liquid coolant between the second compartment and the second die.
8. The system for cooling a semiconductor device according to claim 1, further comprising: A first evacuation pipe, connected to the first compartment and configured to adjust a first pressure in the first compartment; And A second evacuation pipe, connected to the second compartment and configured to adjust a second pressure in the second compartment.
9. A heat transfer structure, comprising: A first compartment, disposed above a first die; A first inlet pipe, connected to the first compartment and configured to supply a first liquid coolant to the first compartment; A second compartment, disposed above a second die and separated from the first compartment; And A second inlet pipe, connected to the second compartment and configured to supply a second liquid coolant to the second compartment.
10. A method for cooling a semiconductor device, comprising: Placing a heat transfer structure on a substrate, wherein: The substrate includes a first die and a second die; and The heat transfer structure includes a first compartment above the first die and a second compartment above the second die; Obtaining a first temperature of the first die; Cooling the first die with the first liquid coolant in the first compartment at a first flow rate based on the first temperature; Obtaining a second temperature on the second die; and Cooling the second die with the second liquid coolant in the second compartment at a second flow rate based on the second temperature, wherein the second flow rate is different from the first flow rate.