Ultra-wide spectrum photoelectric detector and preparation method thereof

Abstract

The invention discloses an ultra-wide spectrum photoelectric detector and a preparation method thereof, the photoelectric detector comprises a substrate, a superlattice material layer, a two-dimensional material layer, an Al < x > Ga < 1-x > N material layer and a pair of metal electrodes, and the substrate, the superlattice material layer, the two-dimensional material layer and the Al < x > Ga < 1-x > N material layer are sequentially arranged from bottom to top; the superlattice material layer serves as an infrared absorption region and is used for responding to an infrared band; the two-dimensional material layer is used as a visible light-to-near-infrared absorption region and is used for responding to a visible light-to-near-infrared band; the Al < x > Ga < 1-x > N material layer serves as an ultraviolet absorption region and is used for responding to an ultraviolet band; and a pair of metal electrodes are respectively deposited on the surfaces of the superlattice material layer and the Al < x > Ga < 1-x > N material layer. According to the invention, three semiconductor materials with different band gaps are utilized to construct the ultra-wide spectrum photoelectric detector covering the ultraviolet spectrum band to the infrared spectrum band in a heterogeneous integration mode, and the method has important value for the development of the ultra-wide spectrum photoelectric detector.

Description

Technical Field

[0001] The present invention belongs to the technical field of optoelectronic detection, relates to an optoelectronic detector, and particularly relates to an ultra-wide spectral optoelectronic detector and a preparation method thereof. Background Art

[0002] Optoelectronic detectors can convert optical signals into electrical signals and play a very important role in optical communication, medical imaging, night vision, gas sensing, security detection, etc. With the continuous expansion of the application fields, the previous optoelectronic detectors for specific wavelength bands are increasingly difficult to meet the diverse requirements, and modern scientific research and applications have paid more attention to ultra-wide spectral optoelectronic detectors that can simultaneously cover multi-band responses.

[0003] According to the photoelectric effect, what kind of photons with what energy a semiconductor material can accept to complete the electron transition from the valence band to the conduction band is determined by its band gap. Therefore, in theory, multi-band optoelectronic detection can be achieved by matching semiconductor materials with different band gaps, and at the same time, the complexity of the system and the instability of the results brought by integrating multiple detectors that respond to different wavelength bands can be avoided.

[0004] Al x Ga 1-x N material is a ternary alloy. By regulating the Al / Ga atomic ratio, its band gap varies in the range of 3.4 - 6.2 eV, showing great freedom for light detection in the ultraviolet band. Some two-dimensional materials, such as MoS2, BP, and Bi2O2Se, etc., due to their unique structures and excellent physical properties, have many excellent performances in the optoelectronic field, and their response ranges are mostly in the visible and near-infrared bands. In most of the infrared region, using superlattice materials is an excellent choice, and the optoelectronic response of 1 - 30 μm can be achieved only by regulating the thickness of the superlattice components. Therefore, hetero-integrating Al x Ga 1-x N materials, two-dimensional materials and superlattice materials can realize optoelectronic detection covering the ultra-wide spectrum from ultraviolet to infrared. Summary of the Invention

[0005] In order to solve the problems such as the narrow detection spectral range and diverse applications of traditional optoelectronic detectors, the present invention provides an ultra-wide spectral optoelectronic detector and a preparation method thereof. The present invention constructs an ultra-wide spectral optoelectronic detector covering the ultraviolet to infrared spectral range by hetero-integrating three semiconductor materials with different band gaps, which has important value for the development of ultra-wide spectral optoelectronic detectors.

[0006] The purpose of the present invention is achieved through the following technical solutions:

[0007] An ultra-wide spectral optoelectronic detector, comprising a substrate, a superlattice material layer, a two-dimensional material layer, Al x Ga1-x An N material layer and a pair of metal electrodes, where:

[0008] The substrate, the superlattice material layer, the two-dimensional material layer, Al x Ga 1-x The N material layer is arranged in sequence from bottom to top;

[0009] The substrate can be one of GaSb, InAs, GaAs or InP;

[0010] The superlattice material layer serves as an infrared absorption region for responding to the infrared band, where: The superlattice material is composed of two or three compounds among III-V group semiconductor compounds and their derived ternary or quaternary alloys. The group III elements include one or several of Al, Ga, and In, and the group V elements include one or several of P, As, and Sb. The thickness of the superlattice material layer can be adjusted arbitrarily to match the bandgap;

[0011] The two-dimensional material layer serves as a visible light to near-infrared absorption region for responding to the visible light to near-infrared band, where: The two-dimensional material can be one of single-element two-dimensional materials, transition metal disulfides, two-dimensional bismuth-based materials, layered double hydroxides, layered metal carbides, metal nitrides, metal-nitrogen oxide composite two-dimensional materials, metal-organic framework materials, and covalent organic framework materials;

[0012] The Al x Ga 1-x The N material layer serves as an ultraviolet absorption region for responding to the ultraviolet band, where: The proportion x of Al in the Al x Ga 1-x N material can be adjusted arbitrarily within the range of 0 to 1;

[0013] The pair of metal electrodes are respectively deposited on the surfaces of the superlattice material layer and the Al x Ga 1-x N material layer, where: The metal electrode material on the surface of the superlattice material layer is one or several of Au, Ag, Al, Cu, Ti, Cr, In, Ni, Pt, and the metal electrode material on the surface of the Al x Ga 1-x N material layer is one or several of Au, Ag, Al, Cu, Ti, Cr, In, Ni, Pt. The metal electrode material on the surface of the superlattice material layer is different in composition from the metal electrode material on the surface of the Al x Ga 1-x N material layer.

[0014] A preparation method of the above-mentioned ultra-wide spectral photodetector includes the following steps:

[0015] Step 1: Surface treatment of the substrate and growth of a buffer layer;

[0016] Step 2: Epitaxially grow a superlattice material layer on the buffer layer, where: The epitaxial method of the superlattice material layer can be selected from molecular beam epitaxy or metalorganic chemical vapor deposition;

[0017] Step 3: Construct a two-dimensional material layer on the superlattice material layer by secondary epitaxy or material transfer technology, where: The epitaxial method of the two-dimensional material layer can be selected from chemical vapor deposition and physical vapor deposition, and the transfer method of the two-dimensional material layer can be selected from dry transfer and wet transfer;

[0018] Step 4: Peel the Al x Ga 1-x N material from the original epitaxial substrate and transfer it to the surface of the two-dimensional material layer, where: The epitaxial substrate of the Al x Ga 1-x N material layer can be selected from sapphire, GaN, and SiC. The epitaxial technology of the Al x Ga 1-x N material layer can be selected from molecular beam epitaxy, metalorganic chemical vapor deposition, and atomic layer deposition technology. The peeling technology of the Al x Ga 1-x N material layer can be selected as laser peeling;

[0019] Step 5: Deposit metal electrodes on the surfaces of the superlattice material layer and the Al x Ga 1-x N material layer respectively, where: The deposition method of the metal electrode can be selected from electron beam evaporation and magnetron sputtering technology.

[0020] Compared with the prior art, the present invention has the following advantages:

[0021] 1. The ultra-wide spectral photodetector of the present invention can respond to multiple bands simultaneously and cover the ultraviolet to infrared region compared with the specific band detector composed of a single material.

[0022] 2. The present invention can realize the free regulation of the front cut-off wavelength and the rear cut-off wavelength of the ultra-wide spectral photodetector by selecting the Al / Ga atomic ratio of the Al x Ga 1-x N material and the thickness of the superlattice components. Description of the Drawings

[0023] Figure 1 is a schematic structural diagram of the ultra-wide spectral photodetector;

[0024] Figure 2 is a preparation flow chart of the ultra-wide spectral photodetector;

[0025] In the figure, 101 - substrate, 102 - superlattice material layer, 103 - two-dimensional material layer, 104 - GaN material layer, 105 - metal electrode, 106 - metal electrode. Detailed implementation mode

[0026] The technical solution of the present invention will be further described below in conjunction with the accompanying drawings, but it is not limited thereto. Any modification or equivalent replacement of the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention shall be covered by the protection scope of the present invention.

[0027] Example 1:

[0028] This example provides an ultra-wide spectral photodetector, as Figure 1 shown. The detector includes a substrate 101, a superlattice material layer 102, a two-dimensional material layer 103, Al x Ga 1-x N material layer 104, a pair of metal electrodes 105 and 106, where:

[0029] The substrate 101 is a GaSb substrate;

[0030] The superlattice material layer 102 is an InAs / GaSb superlattice material layer that responds to the infrared band. The InAs / GaSb superlattice material layer is composed of several periodic layers. Each periodic layer includes 16 atomic layers of InAs and 7 atomic layers of GaSb. The 100% cut-off wavelength after optical response is in the range of 16 - 18 μm;

[0031] The two-dimensional material layer 103 is a two-dimensional Bi2Se3 material layer that responds to the visible and near-infrared bands;

[0032] The Al x Ga 1-x N material layer 104 is a GaN material layer that responds to the ultraviolet band;

[0033] The metal electrode 105 is a Ti / Au composite electrode layer;

[0034] The metal electrode 106 is a Cr / Au composite electrode layer.

[0035] As Figure 2 shown, the specific preparation steps are as follows:

[0036] Step 1: Pretreat the GaSb substrate to remove surface moisture and oxides, and grow a 200-nm-thick GaSb buffer layer to reduce surface roughness;

[0037] Step 2: Epitaxially grow an InAs / GaSb superlattice material layer with a thickness of 200 nm on the GaSb buffer layer, and its lateral size is not limited;

[0038] Step 3: Shield part of the area on the surface of the InAs / GaSb superlattice material layer with a mica substrate material, and then use chemical vapor deposition to grow a 2D Bi2Se3 material layer with a thickness of 100 nm at 300 °C, and its lateral size is not limited;

[0039] Step 4: Use metal-organic chemical vapor deposition technology to epitaxially grow a 200-nm GaN material layer on a sapphire substrate, and peel it off by laser lift-off technology and transfer it to the surface of the 2D Bi2Se3 material layer with the help of PDMS;

[0040] Step 5: Use electron beam evaporation to deposit a Cr / Au composite electrode with a thickness of 10 / 100 nm on the surface of the InAs / GaSb superlattice material layer, and deposit a Ti / Au composite electrode with a thickness of 10 / 50 nm on the surface of the GaN material layer, and the shape of the electrode is not limited.

[0041] Example 2:

[0042] This example provides an ultra-wide spectral photodetector, as Figure 1 shown, the detector includes a substrate 101, a superlattice material layer 102, a two-dimensional material layer 103, Al x Ga 1-x N material layer 104, a pair of metal electrodes 105 and 106, where:

[0043] The substrate 101 is a GaSb substrate;

[0044] The superlattice material layer 102 is an InAs / GaSb / AlSb / GaSb superlattice material layer that responds to the infrared band. The InAs / GaSb / AlSb / GaSb superlattice material layer is composed of several periodic layers. Each periodic layer includes 10 atomic layers of InAs, 1 atomic layer of GaSb, 5 atomic layers of AlSb, and 1 atomic layer of GaSb. The 100% cut-off wavelength after optical response is in the range of 3-4 μm;

[0045] The two-dimensional material layer 103 is a two-dimensional Bi2Te3 material layer that responds to the visible and near-infrared bands;

[0046] The Al x Ga 1-x N material layer 104 is an Al 0.2 Ga 0.8 N material layer that responds to the ultraviolet band;

[0047] The metal electrode 105 is an Ag electrode layer;

[0048] The metal electrode 106 is a Ti / Pt / Au composite electrode layer.

[0049] As shown in Figure 2 below, the specific preparation steps are as follows:

[0050] Step 1: Pretreat the GaSb substrate to remove surface moisture and oxides, and grow a 200-nm-thick GaSb buffer layer to reduce surface roughness;

[0051] Step 2: Epitaxially grow a 200-nm-thick InAs / GaSb / AlSb / GaSb superlattice material layer on the GaSb buffer layer, with no limit on its lateral size;

[0052] Step 3: Use a mica substrate material to shield part of the area on the surface of the InAs / GaSb / AlSb / GaSb superlattice material layer, and then grow a 100-nm-thick two-dimensional Bi2Te3 material layer by chemical vapor deposition at 300 °C, with no limit on its lateral size;

[0053] Step 4: Use metalorganic chemical vapor deposition technology to epitaxially grow a 200-nm Al 0.2 Ga 0.8 N material layer on a sapphire substrate, and strip it off by laser lift-off technology and transfer it to the surface of the two-dimensional Bi2Te3 material layer with the help of PDMS;

[0054] Step 5: Use electron beam evaporation to deposit a Ti / Pt / Au composite electrode with a thickness of 10 / 10 / 100 nm on the surface of the InAs / GaSb / AlSb / GaSb superlattice material layer, and deposit a 50-nm-thick Ag electrode on the surface of the Al 0.2 Ga 0.8 N material layer, with no limit on the shape of the electrode.

[0055] Example 3:

[0056] This example provides an ultra-wide spectral photodetector, as Figure 1 shown, the detector includes a substrate 101, a superlattice material layer 102, a two-dimensional material layer 103, an Al x Ga 1-x N material layer 104, and a pair of metal electrodes 105, where:

[0057] The substrate 101 is an InAs substrate;

[0058] The superlattice material layer 102 is an InAs / GaAsSb superlattice material layer that responds to the infrared band. The InAs / GaAsSb superlattice material layer is composed of several periodic layers, and each periodic layer includes 21 atomic layers of InAs and 9 atomic layers of GaAsSb. The 100% cut-off wavelength after optical response is in the range of 12 - 14 μm;

[0059] The two-dimensional material layer 103 is a two-dimensional Bi2O2Se material layer that responds to visible light and the near-infrared band;

[0060] The Al x Ga 1-x N material layer 104 is an Al 0.7 Ga 0.3 N material layer that responds to the ultraviolet band;

[0061] The metal electrode 105 is a Ni / Au composite electrode layer;

[0062] The metal electrode 106 is a Ti / Au composite electrode layer.

[0063] As Figure 2 shown, the specific preparation steps are as follows:

[0064] Step 1. Pretreat the InAs substrate to remove surface moisture and oxides, and grow a 200-nm-thick InAs buffer layer to reduce surface roughness;

[0065] Step 2. Epitaxially grow an InAs / GaAsSb superlattice material layer with a thickness of 200 nm on the InAs buffer layer, and its lateral size is not limited;

[0066] Step 3. Epitaxially grow a 100-nm two-dimensional Bi2O2Se material layer on the mica substrate by chemical vapor deposition, and transfer it to the surface of the InAs / GaAsSb superlattice material layer through PMMA / PDMS dry transfer technology;

[0067] Step 4. Use metalorganic chemical vapor deposition technology to epitaxially grow a 200-nm Al 0.7 Ga 0.3 N material layer on the sapphire substrate, and peel it off through laser lift-off technology and transfer it to the surface of the two-dimensional Bi2O2Se material layer with the help of PDMS;

[0068] Step 5. Use electron beam evaporation to deposit a 10 / 100-nm Ti / Au composite electrode on the surface of the InAs / GaAsSb superlattice material layer, and deposit a 10 / 50-nm Ni / Au composite electrode on the surface of the Al 0.7 Ga 0.3 N material layer. The shape of the electrode is not limited.

Claims

1. A super-wide spectral photodetector, characterized in that The photodetector includes a substrate, a superlattice material layer, a two-dimensional material layer, Al x Ga 1-x N material layer, and a pair of metal electrodes, where: The substrate, superlattice material layer, two-dimensional material layer, Al x Ga 1-x N material layer are sequentially arranged from bottom to top, and the pair of metal electrodes are respectively deposited on the surfaces of the superlattice material layer and the Al x Ga 1-x N material layer.

2. The ultra-wide spectral photodetector according to claim 1, wherein The substrate is one of GaSb, InAs, GaAs or InP.

3. The ultra-wide spectral photodetector according to claim 1, wherein The superlattice material is composed of two or three compounds selected from group III-V semiconductor compounds and their derived ternary or quaternary alloys. The group III elements include one or more of Al, Ga, and In, and the group V elements include one or more of P, As, and Sb.

4. The ultra-wide spectral photodetector according to claim 1, wherein The two-dimensional material is one of single-element two-dimensional materials, transition metal dichalcogenides, two-dimensional bismuth-based materials, layered double hydroxides, layered metal carbides, metal nitrides, metal-nitrogen oxide composite two-dimensional materials, metal-organic framework materials, and covalent organic framework materials; the Al x Ga 1-x In the N material, x = 0 to 1.

5. The ultra-wide spectral photodetector according to claim 1, characterized in that Among the pair of metal electrodes, the metal electrode material on the surface of the superlattice material layer is one or more of Au, Ag, Al, Cu, Ti, Cr, In, Ni, Pt, and is located on Al x Ga 1-x The metal electrode material on the surface of the N material layer is one or more of Au, Ag, Al, Cu, Ti, Cr, In, Ni, Pt, and the metal electrode material on the surface of the superlattice material layer is different from the composition of the metal electrode material on the surface of the Al x Ga 1-x N material layer.

6. A method for preparing the ultra-wide spectral photodetector according to any one of claims 1-5, characterized in that The method includes the following steps: Step 1: Treat the surface of the substrate and grow a buffer layer; Step 2: Epitaxially grow a superlattice material layer on the buffer layer; Step 3: Construct a two-dimensional material layer on the superlattice material layer by secondary epitaxy or material transfer technology; Step 4. Peel the Al x Ga 1-x N material from the original epitaxial substrate and transfer it to the surface of the two-dimensional material layer; Step Five: Deposit metal electrodes on the surfaces of the superlattice material layer and the Al x Ga 1-x N material layer respectively.

7. The preparation method of the ultra-wide spectral photodetector according to claim 6, characterized in that In step 2, the epitaxy method of the superlattice material layer is selected from molecular beam epitaxy or metalorganic chemical vapor deposition.

8. The preparation method of the ultra-wide spectrum photodetector according to claim 6, characterized in that In step 3, the epitaxy method of the two-dimensional material layer is selected from chemical vapor deposition and physical vapor deposition, and the transfer method of the two-dimensional material layer is selected from dry transfer and wet transfer.

9. The manufacturing method of the ultra-wide spectral photodetector according to claim 6, characterized in that In the fourth step, Al x Ga 1-x The epitaxial substrate of the GaN material layer is selected from one of sapphire, GaN, and SiC. Al x Ga 1-x The epitaxial technology of the GaN material layer is selected from one of molecular beam epitaxy, metalorganic chemical vapor deposition, and atomic layer deposition technologies. Al x Ga 1-x The lift-off technology of the GaN material layer is selected as laser lift-off.

10. The preparation method of the ultra-wide spectral photodetector according to claim 6, characterized in that In step 5, the deposition method of the metal electrode is selected from electron beam evaporation and magnetron sputtering technology.

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