Control method, system and equipment of magnetic thin film deposition system and storage medium

Abstract

The invention discloses a control method, system and equipment of a magnetic thin film deposition system and a storage medium, and the control method comprises the following steps: when it is detected that a substrate material and an evaporation source material are placed at preset positions, sending an operation instruction to a vacuum pump set, so that the vacuum pump set converts the interior of a vacuum outer cover into a vacuum environment; the high-energy electron beam of the evaporation source unit is controlled to evaporate the evaporation source material; the magnetization direction, detected by the TMR linear sensing unit, on the substrate unit is obtained, and the deposition angle is calculated based on the magnetization direction; and sending an angle adjustment instruction to a driving motor of the substrate unit, so that the driving motor drives the substrate on which the substrate unit is placed to rotate. According to the invention, the inclination angle of the base material is controlled to realize the microstructure control of the multi-degree-of-freedom thin film, so that the magnetization direction of the deposited magnetic thin film material is effectively controlled, and the MTJ structure requirements of different application requirements are met.

Description

Technical Field

[0001] The present invention belongs to the field of power distribution networks and relates to a voltage over-limit suppression method, and in particular to a control method, system, equipment and storage medium for a magnetic thin film deposition system. Background Art

[0002] Magnetic thin film deposition technology faces some challenges during its development, especially in terms of the accuracy of magnetization direction control. One of the reasons is that factors such as the lattice structure, stress, and interface effects of the film can easily lead to deviations in the magnetization direction. For example, the temperature of the substrate, the deposition rate, and the properties of the deposited material during the deposition process will affect the crystallization orientation of the film, and thus its magnetic behavior. In addition, changes in film thickness, interface roughness, and the effect of external magnetic fields may also lead to uneven or unstable magnetization directions. For applications that require high-precision magnetization directions, such as spintronics devices or magnetic storage elements, inaccurate magnetization directions may lead to a decline in device performance and even affect its reliability and long-term stability. Therefore, how to accurately control the magnetization direction during the deposition process and improve the magnetic consistency of the film has become an important issue that needs to be urgently addressed in current magnetic thin film technology.

[0003] The patent, "An Ultra-Vacuum Deposition Apparatus for Preparing Magnetic Thin Films," describes an ultra-vacuum deposition apparatus for preparing magnetic thin films and its application method. The apparatus comprises multiple chambers for depositing thin films on substrates, transferring and recovering substrates, and is equipped with a system capable of achieving an ultra-high vacuum environment. The core of the apparatus is a rotating and elevating magnetic support platform and a cylindrical magnetic field surrounding the support platform, rotating along the same perpendicular axis. The patent states that the magnetic field and the support platform can rotate independently to adjust the direction of the magnetic field. Furthermore, the support platform's lift drive system enables the column to move up and down within the sputtering chamber to maintain an appropriate distance between the substrate and the target, improving the uniformity of the sprayed film. However, the method for controlling the rotation and elevation of the support platform described in the patent only allows relative motion when the support platform and the target plane are parallel. This is limited to improving the uniformity of the sprayed film and cannot effectively change the crystal growth direction of the thin film material. Therefore, it cannot directly control the material's magnetization direction and improve the efficiency and performance of spintronic devices.

[0004] based on Structure, the researchers developed five spin-polarized tunneling magnetoresistance (TMR) linear sensing units, including superparamagnetic, out-of-plane, in-plane, artificial indirect-coupled double exchange, and magnetic field-biased types. The detection layers of these TMR linear sensing units can all generate linear magnetic induction signals under the action of an in-plane magnetic field. However, each layer of these five TMR linear sensing units has different requirements for the construction materials, magnetization directions, thicknesses, shapes, and their dimensions. Considering the performance parameters of the TMR linear sensing units, such as the TMR ratio, sensitivity, linear magnetic field range, noise index, non-linearity, etc., the magnetic thin film deposition preparation method with a single degree of freedom obviously cannot meet the diverse application requirements of the TMR linear sensing units. Summary of the Invention

[0005] In view of this, the present invention discloses a control method, system, device, and storage medium for a magnetic thin film deposition system, which can solve the deficiencies existing in the related art.

[0006] To achieve the above object, the technical solutions disclosed by the present invention are as follows: According to the first aspect of the present invention, a control method for a magnetic thin film deposition system is proposed, which is applied to a multi-angle magnetic thin film deposition preparation system based on the magnetization direction. The system includes a vacuum outer cover, a vacuum pump group, a substrate unit, an evaporation source unit, and a TMR linear sensing unit. The vacuum pump group is used to maintain the vacuum environment inside the vacuum outer cover. The substrate unit is installed at the upper end inside the vacuum outer cover, and the evaporation source unit is installed at the lower end inside the vacuum outer cover. The method includes: When it is detected that the substrate material and the evaporation source material are placed at the preset positions, a running instruction is sent to the vacuum pump group to cause the vacuum pump group to convert the inside of the vacuum outer cover into a vacuum environment, and the high-energy electron beam of the evaporation source unit is controlled to evaporate the evaporation source material. Obtain the magnetization direction on the substrate unit detected by the TMR linear sensing unit, and calculate the deposition angle based on the magnetization direction; wherein, the magnetization direction is determined based on the magnetic thin film structure deposited by the contact between the substrate material and the evaporated evaporation source material. Send an angle adjustment instruction to the drive motor of the substrate unit to cause the drive motor to drive the substrate on which the substrate unit is placed to rotate.

[0007] According to the second aspect of the present invention, a magnetic thin film deposition system is proposed. The system includes: A vacuum unit, including a vacuum outer cover and a vacuum pump group, and the vacuum pump group is used to maintain the vacuum environment inside the vacuum outer cover; A substrate unit, which is installed at the upper end inside the vacuum housing, includes a substrate for fixing the substrate material and a drive motor for driving the substrate to rotate to adjust the deposition angle. An evaporation source unit, which is installed at the lower end inside the vacuum housing, includes a crucible for carrying the evaporation source material and a high-energy electron beam for evaporating the evaporation source material. A calculation unit, including a TMR linear sensing unit, is configured to calculate the deposition angle according to the magnetization direction determined by the TMR linear sensing unit and send an angle adjustment signal to the drive motor of the substrate unit based on the deposition angle; wherein, the magnetization direction is determined based on the magnetic thin film structure deposited by the contact between the substrate material and the evaporated evaporation source material.

[0008] According to the third aspect of the present invention, an electronic device is provided, including: A processor; A memory for storing instructions executable by the processor; Wherein, the processor realizes the steps of the method as described in the first aspect by running the executable instructions.

[0009] According to the fourth aspect of the present invention, a computer-readable storage medium is provided, on which computer instructions are stored, and when the instructions are executed by a processor, the steps of the method as described in the first aspect are realized.

[0010] As can be seen from the above technical solutions, the control method of the magnetic thin film deposition system disclosed by the present invention can realize the microstructure control of the thin film with multiple degrees of freedom by controlling the tilt angle of the substrate, thereby effectively controlling the magnetization direction of the deposited magnetic thin film material and meeting the MTJ structure requirements of different application needs. At the same time, optimizing the deposition angle can enhance the in-plane uniaxial magnetic anisotropy of the thin film, which is beneficial to reducing the demand for external magnetic fields and the overall size of the device, and is more convenient for the integration of MTJs. At the same time, the control accuracy of the magnetization direction is improved, which is equivalent to improving the efficiency and performance of spin electronic devices for research and applications. Description of the Drawings

[0011] Figure 1 is a schematic diagram of a magnetic thin film deposition system provided by an exemplary embodiment.

[0012] Figure 2 is a flowchart of a control method of a magnetic thin film deposition system provided by an exemplary embodiment.

[0013] Figure 3 is a schematic diagram of adjusting the deposition angle provided by an exemplary embodiment.

[0014] Figure 4It is a schematic structural diagram of a device provided by an exemplary embodiment.

[0015] Figure 5 A block diagram of a control device for a magnetic thin film deposition system provided by an exemplary embodiment. DETAILED DESCRIPTION

[0016] Exemplary embodiments will be described in detail herein, examples of which are illustrated in the accompanying drawings. In the following description, when referring to the drawings, like numbers in different figures represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments are not intended to represent all implementations consistent with one or more embodiments of the present invention. Rather, they are merely examples of systems and methods consistent with certain aspects of one or more embodiments of the present invention, as detailed in the appended claims.

[0017] It should be noted that in other embodiments, the steps of the corresponding method are not necessarily performed in the order shown and described in the present invention. In some other embodiments, the method may include more or fewer steps than those described in the present invention. In addition, a single step described in the present invention may be broken down into multiple steps for description in other embodiments, and multiple steps described in the present invention may be combined into a single step for description in other embodiments.

[0018] To further illustrate the present invention, the following examples are provided: Magnetic thin film deposition technology faces some challenges during its development, especially in terms of the accuracy of magnetization direction control. One of the reasons is that factors such as the lattice structure, stress, and interface effects of the film can easily lead to deviations in the magnetization direction. For example, the temperature of the substrate, the deposition rate, and the properties of the deposited material during the deposition process will affect the crystallization orientation of the film, and thus its magnetic behavior. In addition, changes in film thickness, interface roughness, and the effect of external magnetic fields may also lead to uneven or unstable magnetization directions. For applications that require high-precision magnetization directions, such as spintronics devices or magnetic storage elements, inaccurate magnetization directions may lead to a decline in device performance and even affect its reliability and long-term stability. Therefore, how to accurately control the magnetization direction during the deposition process and improve the magnetic consistency of the film has become an important issue that needs to be urgently addressed in current magnetic thin film technology.

[0019] Conventional methods for controlling the rotation and elevation of the substrate can only achieve relative motion when the substrate and target planes are parallel. This is limited to improving the uniformity of the sprayed film and cannot effectively change the crystal growth direction of the film material. Consequently, it cannot directly control the magnetization direction of the material and improve the efficiency and performance of spintronic devices.

[0020] based on Structure, researchers have developed five spin-polarized tunneling magnetoresistance (TMR) linear sensing units, including superparamagnetic, out-of-plane, in-plane, artificial indirect-coupled double exchange, and magnetic field-biased types. The detection layers of these TMR linear sensing units can all generate linear magnetic induction signals under the action of an in-plane magnetic field. However, each layer of these five TMR linear sensing units has different requirements in terms of construction materials, magnetization directions, thicknesses, shapes, and their dimensions. Considering the performance parameters of the TMR linear sensing units, such as the TMR ratio, sensitivity, linear magnetic field range, noise index, non-linearity, etc., the magnetic thin film deposition preparation method with a single degree of freedom obviously cannot meet the diverse application requirements of the TMR linear sensing units.

[0021] To address the deficiencies in the related art, the present invention proposes a control method, system, device, and storage medium for a magnetic thin film deposition system.

[0022] Figure 1 It is a schematic diagram of a magnetic thin film deposition system provided by an exemplary embodiment.

[0023] As Figure 1 shown, the system includes: a vacuum unit, including a vacuum outer cover 1 and a vacuum pump group ( Figure 1 not shown in the figure), the vacuum pump group is used to maintain the vacuum environment inside the vacuum outer cover; a substrate unit, the substrate unit is installed at the upper end inside the vacuum outer cover 1, including a substrate 2 for fixing the substrate material 3 and a drive motor 4 for driving the substrate 2 to rotate to adjust the deposition angle; an evaporation source unit, the evaporation source unit is installed at the lower end inside the vacuum outer cover 1, including a crucible 5 for carrying the evaporation source material 6 and a high-energy electron beam ( Figure 1 not shown in the figure) for evaporating the evaporation source material; a calculation unit, including a TMR linear sensing unit, the calculation unit is used to calculate the deposition angle according to the magnetization direction determined by the TMR linear sensing unit and send an angle adjustment signal to the drive motor of the substrate unit based on the deposition angle; wherein, the magnetization direction is determined based on the magnetic thin film structure formed by the contact between the substrate material 3 and the evaporated evaporation source material 6.

[0024] Figure 2 It is a flowchart of a control method for a magnetic thin film deposition system provided by an exemplary embodiment. As Figure 2 shown, the method is applied to a multi-angle magnetic thin film deposition preparation system based on the magnetization direction, the system includes a vacuum outer cover, a vacuum pump group, a substrate unit, an evaporation source unit, a TMR linear sensing unit, the vacuum pump group is used to maintain the vacuum environment inside the vacuum outer cover, the substrate unit is installed at the upper end inside the vacuum outer cover, and the evaporation source unit is installed at the lower end inside the vacuum outer cover; the method includes: Step 202, when it is detected that the substrate material and the evaporation source material are placed at preset positions, send an operation instruction to the vacuum pump group, so that the vacuum pump group converts the inside of the vacuum cover into a vacuum environment, and control the high-energy electron beam of the evaporation source unit to evaporate the evaporation source material; Step 204, obtain the magnetization direction on the substrate unit detected by the TMR linear sensing unit, and calculate the deposition angle based on the magnetization direction; wherein, the magnetization direction is determined based on the magnetic thin film structure deposited by the contact between the substrate material and the evaporated evaporation source material; Step 206, send an angle adjustment instruction to the drive motor of the substrate unit, so that the drive motor drives the substrate on which the substrate unit is placed to rotate.

[0025] In this embodiment, inclined deposition causes magnetic anisotropy to be formed in a specific direction after annealing of the amorphous material, thereby affecting the magnetization direction. The method for preparing a magnetic thin film deposition proposed in this embodiment can affect the microstructure of the thin film by controlling factors such as the tilt angle, deposition rate, and temperature of the substrate. While precisely controlling the magnetization direction, the efficiency and performance of spin electronic devices are improved.

[0026] For the preparation of Taking the MTJ of a certain type as an example, in a precision swaging forming system, there is a high-vacuum chamber, in which a ferromagnetic metal electrode material is used as an evaporation source, that is, the coating material to be evaporated. There is a rapid sampling chamber, and the substrate sample holder therein can rotate in a vertical plane, so as to adjust the direction of the substrate in the longitudinal section, so that the substrate surface and the surface of the evaporation source are no longer in a relatively parallel state, and a suitable deposition angle is constructed. Electron beam deposition uses a high-energy electron beam to bombard the evaporation material (usually a solid target), and the energy transferred by the electron beam causes the material to locally heat up and evaporate rapidly. The evaporated material then diffuses upward in a vacuum environment and condenses on the cooled substrate to form a thin film. ) The microscopic geometry of the thin film (such as the thickness, shape, etc. of the thin film) exhibits shape anisotropy. According to existing research, in the optimal ferromagnetic layer material CoFeB of MTJ, strain has little effect on the anisotropy field, the magnetic hysteresis loop of the annealed thin film has no obvious difference compared with the deposited thin film, and the anisotropy is also the same as that of the deposited state. The magnetocrystalline anisotropy of the annealed thin film makes the material more responsive to the magnetic field in certain specific directions, and the magnetization direction tends to these directions. Therefore, the deposition effect of the thin film is closely related to the deposition angle. This process usually occurs in a high-vacuum environment to reduce the collision between gas molecules and the evaporated substance and ensure the quality of the thin film.

[0027] The specific preparation process includes: Step 1: Determine the required TMR linear sensor unit type: Consider the comprehensive performance of the TMR linear sensor unit after bridge design integration, match it with the usage requirements, and determine the required TMR linear sensor unit interlayer structure design and the magnetization direction of each material layer.

[0028] Step 2: Prepare the layer materials: Prepare the substrate material (MgO, the insulating barrier material in this example), and the evaporation source material (CoFeB, the ferromagnetic layer material in this example). According to the requirements of the electron beam evaporation system for evaporation source materials, the CoFeB particles need to be 3-5 mm long.

[0029] Step 3: Fix the substrate: After fixing the substrate material on the substrate, the stepper motor drives the stroke in the Y direction, sends the substrate into the fast sample feeding chamber and locks it on the substrate holder through the mechanical structure.

[0030] Step 4: Place the evaporation source: Place the ferromagnetic layer material CoFeB of the evaporation source in the crucible at the corresponding position in the growth vacuum chamber.

[0031] Step 5: Create a vacuum environment: After checking that the evaporation source and substrate are in the correct position, close the chamber doors and use the vacuum pump set that comes with the precision swimming molding system to first evacuate the growth vacuum chamber to a vacuum environment, and then evacuate the rapid injection chamber to a vacuum environment. Ensure that the difference in vacuum between the two should be within 1.0×10 -5 Pa range, open the corresponding valve to connect the two cavities. At this time, at least 9×10 -6 The Pa vacuum environment meets the environmental requirements of high-vacuum coating. In electron beam evaporation systems, a high vacuum environment reduces gas molecule collisions, preventing sample oxidation and contamination. It also controls the thin film growth process, preventing discharge and arcing, and maintaining a stable evaporation process, thereby improving film purity and quality, as well as equipment life and reliability.

[0032] Step 6: Adjust the deposition angle: Determine the deposition angle according to the requirements of the magnetization direction of the selected TMR linear sensor unit, input the corresponding parameters of the angle into the control system, and the substrate sample holder is controlled to rotate in the X-axis direction, driving the substrate on the substrate to rotate to the required relative tilt angle Step 7: Start the magnetic film deposition process: Start the focusing of the high-energy electron beam through the control software to evaporate the evaporation source material in the crucible into gas. Step 8: End deposition: Observe the real-time film thickness displayed by the film thickness gauge. When the deposited thickness is within the desired range, close the electron beam valve to stop the deposition process. Return the chamber to atmospheric pressure and remove the sample.

[0033] In one embodiment, the system includes a film thickness gauge for detecting the real-time film thickness of the magnetic thin film on the substrate; the method further includes: turning off the high-energy electron beam when the real-time film thickness reaches a preset thickness.

[0034] In one embodiment, the system includes a first induction unit and a second induction unit. The substrate unit includes a substrate for fixing the substrate material, and the evaporation source unit includes a crucible for carrying the evaporation source material; the method further includes: determining whether the substrate material is placed on the substrate through the first induction unit, and determining whether the evaporation source material is placed on the crucible through the second induction unit; when the substrate material is placed on the substrate and the evaporation source material is placed on the crucible, determining that the substrate material and the evaporation source material are placed at the preset positions.

[0035] In one embodiment, the substrate unit includes a substrate for fixing the substrate material, a drive motor for driving the substrate to rotate to adjust the deposition angle, and a sample introduction chamber 7 connecting the drive motor and the substrate; the method further includes: receiving the angle adjustment signal and driving the substrate to rotate through the drive motor; and / or, receiving the angle adjustment signal and adjusting the angle between the sample introduction chamber and the substrate.

[0036] As Figure 3 shown, part a shows that the substrate material can be driven by the drive motor to be selected and the appropriate deposition angle in the longitudinal section direction is adjusted, so that the substrate surface and the evaporation source plane are no longer in a relatively parallel state. The rotation inclination angle is shown in part c. The material is heated to a high enough temperature by the focusing effect of the high-energy electron beam to evaporate the material into a gaseous state, and the evaporation source material is deposited on the cooled substrate surface in a gaseous form. In part b, the obliquely deposited gaseous evaporation source material is dominated by the "shadow effect" for film growth. An inclined columnar and porous microstructure is formed. The process is that the initially deposited particles form nuclei and project shadows, preventing other particles from depositing in the shadow area, enabling preferential growth in the higher areas, forming competitive growth, and finally forming an inclined columnar structure.

[0037] Further, sending an operation instruction to the vacuum pump group to convert the inside of the vacuum outer cover into a vacuum environment includes: controlling the vacuum pump group to extract the air inside the vacuum outer cover and the inside of the sample introduction chamber, and keeping the pressure difference between the inside of the vacuum outer cover and the inside of the sample introduction chamber less than a preset difference.

[0038] In one embodiment, the air pressure of the vacuum environment is 9×10-6 Pa, and the preset difference is 1.0×10 -5 Pa.

[0039] In one embodiment, the substrate material is the insulating barrier layer material MgO, and the evaporation source material is the ferromagnetic layer material CoFeB.

[0040] Furthermore, the evaporation source unit includes a high-energy electron beam for evaporating the evaporation source material, and the evaporation source material is granular ferromagnetic layer material CoFeB with a length of 3 - 5 mm.

[0041] In this embodiment, during the deposition of the magnetic thin film, rotation of the substrate relative to the evaporation source plane is achieved. By adjusting the relative tilt angle of the substrate, the shape anisotropy exhibited by the amorphous structure formed during the inclined deposition can be utilized at the microscale to optimize the magnetic field response. After deposition and annealing, the thin films exhibit significantly different saturation fields at different deposition angles. As the tilt angle increases, the in-plane uniaxial magnetic anisotropy field ( ) of the thin film increases. The increase in the anisotropy magnetic field is beneficial for reducing the external magnetic field, decreasing the overall volume of the device, and facilitating the integrated research and application of MTJ more conveniently. ) increases. The increase in the anisotropy magnetic field is beneficial for reducing the external magnetic field, decreasing the overall volume of the device, and facilitating the integrated research and application of MTJ more conveniently.

[0042] In addition, the high-frequency magnetic properties of the thin film are adjusted, the range of its resonance frequency ( ) is expanded, and at the same time, the damping factor is reduced. Effectively reduce the ferromagnetic resonance linewidth (ΔH) of the thin film to a relatively low value. For typical ferromagnetic materials, a low ΔH means that spin waves are allowed to propagate longer distances within the material with minimal dissipation, thereby improving the efficiency and performance of spintronic devices.

[0043] The types of TMR linear sensing units are diverse, and each layer of each type of TMR has different requirements for the construction material, magnetization direction, thickness, shape, and its size. The multi-angle magnetic thin film deposition preparation method proposed in this patent can reduce the process flow and control parameters such as the hierarchical magnetization direction and thickness at one time. Meet the performance parameters of the TMR ratio, sensitivity, linear magnetic field range, noise index, non-linearity, etc. of the TMR linear sensing unit, with different emphases during the application process.

[0044] Figure 4 is a schematic structural diagram of a device provided by an exemplary embodiment. Please refer to Figure 4, at the hardware level, the device includes a processor 402, an internal bus 404, a network interface 406, a memory 408, and a non-volatile memory 410. Of course, it may also include other hardware required for other functions. One or more embodiments of the present invention can be implemented in a software manner. For example, the processor 402 reads the corresponding computer program from the non-volatile memory 410 into the memory 408 and then runs it. Of course, in addition to the software implementation manner, one or more embodiments of the present invention do not exclude other implementation manners, such as logic devices or a combination of software and hardware, etc. That is to say, the execution subject of the following processing flow is not limited to each logic unit, and can also be hardware or logic devices.

[0045] Please refer to Figure 5 , a control device of a magnetic thin film deposition system can be applied to a device as shown in Figure 5 to implement the technical solution of the present invention. It is applied to a multi-angle magnetic thin film deposition preparation system based on the magnetization direction. The system includes a vacuum enclosure, a vacuum pump group, a substrate unit, an evaporation source unit, and a TMR linear sensing unit. The vacuum pump group is used to maintain the vacuum environment inside the vacuum enclosure. The substrate unit is installed at the upper end inside the vacuum enclosure, and the evaporation source unit is installed at the lower end inside the vacuum enclosure. The device may include: A sending unit 502, configured to send an operation instruction to the vacuum pump group when it is detected that the substrate material and the evaporation source material are placed at preset positions, so that the vacuum pump group converts the inside of the vacuum enclosure into a vacuum environment, and controls the high-energy electron beam of the evaporation source unit to evaporate the evaporation source material; A calculation unit 504, configured to obtain the magnetization direction on the substrate unit detected by the TMR linear sensing unit, and calculate the deposition angle based on the magnetization direction; wherein, the magnetization direction is determined based on the magnetic thin film structure deposited by the contact between the substrate material and the evaporated evaporation source material; An adjustment unit 506, configured to send an angle adjustment instruction to the drive motor of the substrate unit, so that the drive motor drives the substrate on which the substrate unit is placed to rotate.

[0046] Optionally, the system includes a first sensing unit and a second sensing unit. The substrate unit includes a substrate for fixing the substrate material, and the evaporation source unit includes a crucible for carrying the evaporation source material. The device further includes: A first determination unit 508, configured to determine whether the substrate material is placed on the substrate through the first sensing unit, and determine whether the evaporation source material is placed on the crucible through the second sensing unit; A second determination unit 510, configured to determine that the substrate material and the evaporation source material are placed at the preset positions when the substrate material is placed on the substrate and the evaporation source material is placed on the crucible.

[0047] Optionally, the substrate unit includes a substrate for fixing the substrate material, a drive motor for driving the substrate to rotate so as to adjust the deposition angle, and a sample introduction chamber connecting the drive motor and the substrate; the apparatus further includes: A first adjustment unit 512, configured to receive the angle adjustment signal and drive the substrate to rotate through the drive motor; and / or, A second adjustment unit 514, configured to receive the angle adjustment signal and adjust the angle between the sample introduction chamber and the substrate.

[0048] Optionally, the second control unit 504 is specifically configured to: Control the vacuum pump group to extract the air inside the vacuum housing and inside the sample introduction chamber, and keep the pressure difference between the inside of the vacuum housing and the inside of the sample introduction chamber less than a preset difference.

[0049] Optionally, the air pressure in the vacuum environment is 9×10-6 Pa, and the preset difference is 1.0×10 -5 Pa.

[0050] Optionally, the substrate material is an insulating barrier layer material MgO, and the evaporation source material is a ferromagnetic layer material CoFeB.

[0051] Optionally, the evaporation source unit includes a high-energy electron beam for evaporating the evaporation source material, and the evaporation source material is a granular ferromagnetic layer material CoFeB with a length of 3-5 mm.

[0052] The systems, apparatuses, modules or units illustrated in the above embodiments may be specifically implemented by a computer chip or an entity, or by a product with certain functions. A typical implementation device is a computer, and the specific form of the computer may be a personal computer, a laptop computer, a cellular phone, a camera phone, a smart phone, a personal digital assistant, a media player, a navigation device, an email transceiver device, a game console, a tablet computer, a wearable device, or a combination of any several of these devices.

[0053] In a typical configuration, a computer includes one or more processors (CPUs), an input / output interface, a network interface, and a memory.

[0054] Memory may include non-permanent memory in the form of computer-readable media, such as random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM. Memory is an example of computer-readable media.

[0055] Computer-readable media includes permanent and non-permanent, removable and non-removable media that can store information by any method or technology. The information can be computer-readable instructions, data structures, program modules, or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technologies, compact disc read-only memory (CD-ROM), digital versatile disc (DVD) or other optical storage, magnetic cassette tapes, magnetic disk storage, quantum memory, graphene-based storage media or other magnetic storage devices, or any other non-transitory media that can store information accessible by a computing device. As defined herein, computer-readable media does not include transitory computer-readable media, such as modulated data signals and carrier waves.

[0056] For the computer-readable media (or computer-readable storage media) described above or in any other form, computer instructions can be stored thereon, and when executed by a processor, one or more of the above-described embodiments can be implemented, thereby implementing the technical solution of the present invention.

[0057] The present invention also provides a computer program, which when executed by a processor, implements one or more of the above-described embodiments, thereby implementing the technical solution of the present invention. Among them, the computer program can be specifically recorded on the computer-readable media described above or in any other form, and the present invention does not limit this.

[0058] It should also be noted that the term "comprising", "including" or any other variation thereof is intended to cover non-exclusive inclusion, such that a process, method, commodity or device comprising a series of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, commodity or device. Without further limitation, an element defined by the statement "comprising an..." does not exclude the presence of additional identical elements in the process, method, commodity or device comprising the element.

[0059] The above describes specific embodiments of the present invention. Other embodiments are within the scope of the appended claims. In some cases, the acts or steps recited in the claims may be performed in a different order than in the embodiments and still achieve the desired results. Additionally, the processes depicted in the figures do not necessarily require the particular order shown or sequential order to achieve the desired results. In certain embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0060] The terms used in one or more embodiments of the present invention are for the purpose of describing particular embodiments only and are not intended to limit one or more embodiments of the present invention. The singular forms "a", "the", and "said" used in one or more embodiments of the present invention and the appended claims are also intended to include the plural forms unless the context clearly dictates otherwise. It should also be understood that the term "and / or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.

[0061] It should be understood that although the terms first, second, third, etc. may be used in one or more embodiments of the present invention to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from each other. For example, without departing from the scope of one or more embodiments of the present invention, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, the word "if" as used herein may be interpreted as "when" or "upon" or "in response to determining".

[0062] The above are only the preferred embodiments of one or more embodiments of the present invention and are not intended to limit one or more embodiments of the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of one or more embodiments of the present invention shall be included within the scope of protection of one or more embodiments of the present invention.

Claims

1. A control method for a magnetic thin film deposition system, characterized in that, Applied to a multi-angle magnetic thin film deposition preparation system based on magnetization direction, the system includes a vacuum enclosure, a vacuum pump group, a substrate unit, an evaporation source unit, and a TMR linear sensing unit. The vacuum pump group is used to maintain the vacuum environment inside the vacuum enclosure. The substrate unit is installed at the upper end inside the vacuum enclosure, and the evaporation source unit is installed at the lower end inside the vacuum enclosure. The method includes: When it is detected that the substrate material and the evaporation source material are placed at the preset positions, send an operation instruction to the vacuum pump group to convert the inside of the vacuum enclosure into a vacuum environment by the vacuum pump group, and control the high-energy electron beam of the evaporation source unit to evaporate the evaporation source material; Obtain the magnetization direction on the substrate unit detected by the TMR linear sensing unit, and calculate the deposition angle based on the magnetization direction. Wherein, the magnetization direction is determined based on the magnetic thin film structure deposited by the contact between the substrate material and the evaporated evaporation source material; Send an angle adjustment instruction to the drive motor of the substrate unit to make the drive motor drive the substrate on which the substrate unit is placed to rotate.

2. The method according to claim 1, wherein The system includes a first sensing unit and a second sensing unit. The substrate unit includes a substrate for fixing the substrate material, and the evaporation source unit includes a crucible for carrying the evaporation source material. The method further includes: Determine whether the substrate material is placed on the substrate through the first sensing unit, and determine whether the evaporation source material is placed on the crucible through the second sensing unit; When the substrate material is placed on the substrate and the evaporation source material is placed on the crucible, determine that the substrate material and the evaporation source material are placed at the preset positions.

3. The method according to claim 1, characterized in that The substrate unit includes a substrate for fixing the substrate material, a drive motor for driving the substrate to rotate to adjust the deposition angle, and a sample introduction chamber connecting the drive motor and the substrate; The method further includes: Receive the angle adjustment signal and drive the substrate to rotate through the drive motor; and / or, Receive the angle adjustment signal and adjust the angle between the sample introduction chamber and the substrate.

4. The method according to claim 3, characterized in that, The sending the operation instruction to the vacuum pump group to convert the inside of the vacuum enclosure into a vacuum environment includes: Control the vacuum pump group to extract the air inside the vacuum enclosure and the inside of the sample introduction chamber, and keep the pressure difference between the inside of the vacuum enclosure and the inside of the sample introduction chamber less than a preset difference.

5. The method according to claim 4, wherein The air pressure in the vacuum environment is 9×10-6 Pa, and the preset difference is 1.0×10 -5 Pa.

6. The method according to claim 1, wherein The substrate material is an insulating barrier layer material MgO, and the evaporation source material is a ferromagnetic layer material CoFeB.

7. The method according to claim 6, characterized in that, The evaporation source unit includes a high-energy electron beam for evaporating the evaporation source material, and the evaporation source material is a granular ferromagnetic layer material CoFeB with a length of 3 - 5 mm.

8. A magnetic thin film deposition system, characterized in that, The system includes: A vacuum unit, including a vacuum enclosure and a vacuum pump group, where the vacuum pump group is used to maintain the vacuum environment inside the vacuum enclosure; A substrate unit, which is installed at the upper end inside the vacuum outer cover, includes a substrate for fixing a substrate material and a drive motor for driving the substrate to rotate so as to adjust the deposition angle. An evaporation source unit, which is installed at the lower end inside the vacuum outer cover, includes a crucible for carrying an evaporation source material and a high-energy electron beam for evaporating the evaporation source material. A calculation unit, including a TMR linear sensing unit, is configured to calculate a deposition angle according to the magnetization direction determined by the TMR linear sensing unit and send an angle adjustment signal to the drive motor of the substrate unit based on the deposition angle; wherein, the magnetization direction is determined based on a magnetic thin film structure formed by contact between the substrate material and the evaporated evaporation source material.

9. An electronic device, characterized in that, Comprising: A processor; A memory for storing processor-executable instructions; Wherein, the processor realizes the steps of the method according to any one of claims 1-7 by running the executable instructions.

10. A computer-readable storage medium having computer instructions stored thereon, characterized in that, When the instruction is executed by the processor, the steps of the method according to any one of claims 1-7 are realized.

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