Preparation method of high-compactness silicon dioxide film layer

Abstract

The invention discloses a preparation method of a high-compactness silicon dioxide film layer, and belongs to the field of silicon dioxide film preparation. 2, preparing a vacuum chamber; step 3, sputtering process; 4, film post-treatment. The film is high in compactness, low in porosity and excellent in mechanical strength and chemical stability; the preparation process is simple, low in cost and easy for large-scale production; the film layer has high light transmittance and is suitable for the optical and electronic fields; and the film thickness and the surface performance can be adjusted according to requirements.

Description

Technical Field

[0001] The present invention belongs to the technical field of silica film preparation, and particularly relates to a method for preparing a highly dense silica film. Background Art

[0002] Silica (SiO2) films are widely used in multiple industrial fields due to their excellent chemical stability, high light transmittance, insulation, and corrosion resistance. However, silica films prepared by traditional methods often have problems such as insufficient density, high porosity, and low mechanical strength, which limit their application in high-end fields. Therefore, it is of great significance to develop a method for preparing silica films with high density, low cost, and easy large-scale production. Summary of the Invention

[0003] To achieve the above object, the technical solution of the present invention is as follows: A method for preparing a highly dense silica film, comprising the following steps: Step 1, substrate preparation; Step 2, vacuum chamber preparation; Step 3, sputtering process; Step 4, post-treatment of the film.

[0004] Preferably, the substrate preparation in Step 1 includes the following steps: Cleaning: The substrate needs to be cleaned with deionized water, acetone, ethanol, etc. to remove surface contaminants; Drying: After cleaning, the substrate needs to be dried in a clean environment to avoid water stain residues.

[0005] Preferably, the vacuum chamber preparation in Step 2 includes the following steps: Vacuum pumping: The substrate is placed in the vacuum chamber and pumped to a high vacuum; Pre-sputtering: Perform short-term pre-sputtering to remove contaminants on the target surface.

[0006] Preferably, the sputtering process in Step 3 includes: Gas introduction: Argon (Ar) is introduced as the working gas, and oxygen (O2) is introduced as the reaction gas, and the flow rates are adjusted to control the film composition; Target selection: Use a high-purity silicon (Si) target; Sputtering parameter setting: Adjust the sputtering parameters to optimize the film quality; Sputtering deposition: Under the action of an electric field, argon ions bombard the target, sputtering out silicon atoms, which react with oxygen to form SiO2 and deposit on the substrate.

[0007] Preferably, Step 4 includes the following steps: Annealing: Anneal the film as needed; Cooling: After annealing, the film is cooled to room temperature in a vacuum or inert gas.

[0008] Preferably, the sputtering parameters include power, gas pressure, and substrate temperature.

[0009] Preferably, the film layer is mainly composed of silicon dioxide SiO2, with a thickness of 20 nm to 50 nm, an HF etching rate ≤ 0.3 nm / s, and a light transmittance greater than 90%.

[0010] Compared with the prior art, the beneficial effects of the present invention are as follows: 1. The film layer has high density, low porosity, excellent mechanical strength and chemical stability; 2. The preparation process is simple, the cost is low, and it is easy to scale up production; 3. The film layer has high light transmittance and is suitable for optical and electronic fields; 4. The film layer thickness and surface properties can be adjusted according to requirements. Description of the Drawings

[0011] Figure 1 It is a flow chart of the preparation method described in the present invention; Figure 2 It is the etching thickness of the silicon dioxide film layer by HF acid per second. Detailed Embodiments

[0012] The following further clarifies the present invention in conjunction with the drawings and specific embodiments. It should be understood that the following specific embodiments are only used to illustrate the present invention and not to limit the scope of the present invention.

[0013] Example: As Figure 1 shown, a method for preparing a highly dense silicon dioxide film layer includes the following steps: Step 1, substrate preparation; Step 2, vacuum chamber preparation; Step 3, sputtering process; Step 4, post-treatment of the film.

[0014] Furthermore, the substrate preparation in Step 1 includes the following steps: Cleaning: The substrate needs to be cleaned with deionized water, acetone, ethanol, etc. to remove surface contaminants; Drying: After cleaning, the substrate needs to be dried in a clean environment to avoid water stain residues.

[0015] Furthermore, the vacuum chamber preparation in Step 2 includes the following steps: Vacuum pumping: The substrate is placed in the vacuum chamber and pumped to a high vacuum; Pre-sputtering: Perform short-time pre-sputtering to remove contaminants on the target surface.

[0016] Further, the sputtering process in Step 3 includes: Gas introduction: Introduce argon (Ar) as the working gas and oxygen (O2) as the reaction gas, and adjust the flow rate to control the film composition; Target selection: Use a high-purity silicon (Si) target; Sputtering parameter setting: Adjust the sputtering parameters to optimize the film quality; Sputtering deposition: Under the action of an electric field, argon ions bombard the target, sputtering out silicon atoms, which react with oxygen to form SiO2 and deposit on the substrate.

[0017] Further, Step 4 includes the following steps: Annealing: Anneal the film as needed; Cooling: After annealing, cool the film to room temperature in a vacuum or inert gas.

[0018] Further, the sputtering parameters include power, gas pressure, and substrate temperature.

[0019] Further, the film layer is mainly composed of silicon dioxide (SiO2), with a thickness of 20 nm to 50 nm, an HF etching rate ≤ 0.3 nm / s, and a light transmittance greater than 90%.

[0020] It should be noted that the above content only illustrates the technical idea of the present invention and cannot be used to limit the protection scope of the present invention. For those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and refinements can be made, and these improvements and refinements all fall within the protection scope of the claims of the present invention.

Claims

1. A method for preparing a highly dense silica film layer, characterized in that, It includes the following steps: Step 1, substrate preparation; Step 2, vacuum chamber preparation; Step 3, sputtering process; Step 4, post-treatment of the thin film.

2. The method for preparing a highly dense silica film layer according to claim 1, characterized in that, The substrate preparation in Step 1 includes the following steps: Cleaning: Clean the substrate to remove surface contaminants; Drying: After cleaning, the substrate needs to be dried in a clean environment.

3. A method for preparing a highly dense silica film layer according to claim 1, characterized in that, The vacuum chamber preparation in Step 2 includes the following steps: Vacuum pumping: Place the substrate in the vacuum chamber and pump it to a high vacuum; Pre-sputtering: Conduct short-time pre-sputtering to remove contaminants on the target surface.

4. A method for preparing a highly dense silica film layer according to claim 1, characterized in that, The sputtering process in Step 3 includes: Gas introduction: Introduce argon (Ar) as the working gas and oxygen (O2) as the reaction gas, and adjust the flow rate to control the film composition; Target selection: Use a high-purity silicon (Si) target; Sputtering parameter setting: Adjust the sputtering parameters to optimize the film quality; Sputtering deposition: Under the action of an electric field, argon ions bombard the target, sputtering out silicon atoms, which react with oxygen to form SiO2 and deposit on the substrate.

5. A method for preparing a highly dense silica film layer according to claim 1, characterized in that, Step 4 includes the following steps: Annealing: Anneal the thin film as needed; Cooling: After annealing, the thin film is cooled to room temperature in a vacuum or inert gas.

6. A method for preparing a highly dense silica film layer according to claim 1, characterized in that, The sputtering parameters include power, gas pressure, and substrate temperature.

7. A method for preparing a highly dense silica film layer according to claim 1, characterized in that, The film layer is mainly composed of silicon dioxide (SiO2), with a thickness of 20 nm to 50 nm, an HF etching rate ≤ 0.3 nm / s, and a light transmittance greater than 90%.

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