PECVD-magnetron sputtering co-deposition doped film layer device

Abstract

The invention discloses a PECVD (Plasma Enhanced Chemical Vapor Deposition)-magnetron sputtering co-deposition doped film layer device, which is characterized in that other oxides, metals or semiconductors are doped into a substrate deposition film through magnetron sputtering in the PECVD process, and the deposition speed of magnetron sputtering can be controlled through a sputtering adjusting mechanism. A chemical vapor deposition mechanism and a magnetron sputtering mechanism are arranged in a containing cavity of the device, in the process that PECVD is conducted on a target substrate of a substrate connecting component through the chemical vapor deposition mechanism, co-deposition can be conducted on the surface of the target substrate through the magnetron sputtering mechanism, so that a thin film formed by PECVD can be subjected to doping modification through magnetron sputtering, the sputtering adjusting mechanism is arranged between the magnetron sputtering mechanism and the substrate connecting component, so that the sputtering rate of the magnetron sputtering mechanism can be accurately controlled, and the deposition uniformity of the magnetron sputtering mechanism can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of vacuum deposition coating, and particularly to a PECVD-magnetron sputtering co-deposition doped film device. Background Art

[0002] Both PECVD (Plasma Enhanced Chemical Vapor Deposition) and magnetron sputtering technologies are commonly used technical means in deposition coating. In the prior art, co-deposition devices that achieve co-deposition coating through PECVD and magnetron sputtering technologies generally fall into two approaches. One is to separately arrange a magnetron sputtering device and a PECVD device in a vacuum reaction chamber, but during the operation process, they are still used as two separate devices to successively use PECVD and magnetron sputtering technologies, so as to separately deposit coatings successively. The two devices are not truly integrated, and co-deposition coating cannot be achieved. The other is to integrate the PECVD and magnetron sputtering two devices into one and co-deposition coating can be achieved, but the plasma generated after the two systems are started and operated will interfere with each other, resulting in unstable film formation quality.

[0003] Moreover, in the existing magnetron sputtering technology, there is a lack of precise control means for target materials with a relatively fast sputtering rate, so it is difficult to regulate the content of target atoms in the deposited film, resulting in unstable sputtering rate and deposition uniformity of magnetron sputtering. Summary of the Invention

[0004] In view of the above problems, the present invention provides a PECVD-magnetron sputtering co-deposition doped film device, which can achieve co-deposition coating on the basis of the integration of a magnetron sputtering device and a PECVD device. Among them, the magnetron sputtering system and the PECVD system are independent of each other, so as to reduce the mutual influence of the simultaneously generated plasma. Moreover, the magnetron sputtering system also has a device that can precisely control the target sputtering rate.

[0005] The device is provided with a substrate connection component for fixing the substrate to be deposited. Moreover, the PECVD-magnetron sputtering co-deposition doped film device includes:

[0006] A housing, the housing forms a containing cavity, the containing cavity also has a gas supply mechanism for introducing reaction gas, and the substrate connection component is located in the containing cavity;

[0007] A chemical vapor deposition mechanism, at least partially received in the containing cavity, and used for ionizing the reaction gas in the containing cavity, so that the plasma clusters generated by ionization are deposited on the target surface of the substrate to be deposited, so as to form a film on the target surface;

[0008] A magnetron sputtering mechanism, at least partially received in the accommodation cavity and configured to output target atoms to the target surface of the substrate to be deposited;

[0009] A sputtering adjustment mechanism, disposed between the magnetron sputtering mechanism and the substrate connection component, and configured to adjust the flow rate of the target atoms output by the magnetron sputtering mechanism to the target surface.

[0010] In one embodiment, the PECVD-magnetron sputtering co-deposition doping film device has a switchable first working mode and second working mode. Wherein, in the first working mode, one of the chemical vapor deposition mechanism and the magnetron sputtering mechanism operates, and when the magnetron sputtering mechanism operates, the flow rate of the target atoms output by the magnetron sputtering mechanism to the target surface can be adjusted by the sputtering adjustment mechanism;

[0011] In the second working mode, both the chemical vapor deposition mechanism and the magnetron sputtering mechanism operate, and the flow rate of the target atoms output by the magnetron sputtering mechanism to the target surface can be adjusted by the sputtering adjustment mechanism.

[0012] In one embodiment, the magnetron sputtering mechanism at least includes a first magnetron sputtering component and a second magnetron sputtering component. The first magnetron sputtering component is configured to output target atoms to a first region of the target surface of the substrate to be deposited, and the second magnetron sputtering component is configured to output target atoms to a second region of the target surface of the substrate to be deposited, and at least a part of the first region and the second region overlap;

[0013] The sputtering adjustment mechanism is correspondingly arranged for the target magnetron sputtering component and configured to adjust the flow rate of the target atoms output by the target magnetron sputtering component to the target surface of the substrate to be deposited, and the target magnetron sputtering component includes at least one of the first magnetron sputtering component and the second magnetron sputtering component;

[0014] Wherein, the first magnetron sputtering component and the second magnetron sputtering component are configured to output different target atoms to the target surface of the substrate to be deposited, or the first magnetron sputtering component and the second magnetron sputtering component are configured to output the same target atoms to the target surface of the substrate to be deposited.

[0015] In one embodiment, the gas supply mechanism includes a first gas supply component. The first gas supply component is provided with at least two first gas supply ports, and both the first magnetron sputtering component and the second magnetron sputtering component each correspond to at least one first gas supply port;

[0016] And / or, the gas supply mechanism includes a second gas supply component. The second gas supply component is disposed in the chemical vapor deposition mechanism. Wherein, the second gas supply component is provided with a plurality of second gas supply ports, and the plurality of second gas supply ports are located inside the chemical vapor deposition mechanism and are spaced apart and annularly arranged around the circumference of the substrate to be deposited.

[0017] In one embodiment, the chemical vapor deposition mechanism is disposed around the circumferential side of the substrate connection component, and the substrate connection component is rotatable relative to the chemical vapor deposition mechanism, and the substrate connection component is provided with a heating portion;

[0018] Wherein, the PECVD-magnetron sputtering co-deposition doping film device is further provided with a first driving mechanism for driving at least one of the substrate connection component and the chemical vapor deposition mechanism to move so as to adjust the distance between the substrate connection component and the magnetron sputtering mechanism.

[0019] In one embodiment, the sputtering adjustment mechanism includes a first adjustment component, and the first adjustment component includes a connecting member, a first baffle and a first driving member;

[0020] The first baffle is disposed between the magnetron sputtering mechanism and the substrate connection component and is rotatably connected to the connecting member, and a through hole is formed in the first baffle;

[0021] The first driving member is connected to the first baffle and is used for driving the first baffle to rotate and adjusting the rotation speed of the first baffle;

[0022] Wherein, the rotation speed of the first baffle is negatively correlated with the flow rate of the target atoms output from the magnetron sputtering mechanism to the target surface.

[0023] In one embodiment, the first adjustment component further includes a second driving member, and the second driving member is connected to the connecting member and is used for driving the connecting member to displace relative to the magnetron sputtering mechanism so that the first baffle approaches or moves away from the magnetron sputtering mechanism.

[0024] In one embodiment, a plurality of through holes are arranged at intervals on the first baffle, and a first gear portion is arranged on the circumferential side of the first baffle, and the first driving member meshes with the first gear portion to adjust the rotation speed of the first baffle;

[0025] Wherein, there is a first distance L between the first baffle and the magnetron sputtering mechanism, and the first distance L satisfies 2 ≤ L ≤ 8 cm.

[0026] In one embodiment, the sputtering adjustment mechanism further includes a second adjustment component. Wherein, the second adjustment component includes a second baffle and a second driving component. The second baffle is disposed between the first adjustment component and the magnetron sputtering mechanism, and the second driving component is used for driving the second baffle to move so that the second baffle rotates relative to the magnetron sputtering mechanism to a first position or a second position;

[0027] Wherein, the region where the magnetron sputtering mechanism outputs target atoms forms a magnetron sputtering surface. In the case where the second baffle rotates relative to the magnetron sputtering mechanism to the first position, the second baffle forms a first projection in the direction perpendicular to the magnetron sputtering surface;

[0028] When the second baffle rotates relative to the magnetron sputtering mechanism to the second position, the second baffle forms a second projection in the direction perpendicular to the magnetron sputtering surface;

[0029] The area of the magnetron sputtering surface covered by the first projection is larger than the area of the magnetron sputtering surface covered by the second projection.

[0030] In one embodiment, the PECVD-magnetron sputtering co-deposition doping film layer device further includes a vacuum mechanism for performing a vacuum pumping operation on the accommodation cavity.

[0031] The embodiment of the present application provides a PECVD-magnetron sputtering co-deposition doping film layer device, which dopes other oxides, metals or semiconductors into the thin film deposited on the substrate during the PECVD process by magnetron sputtering, and the deposition rate of magnetron sputtering can be controlled by a sputtering adjustment mechanism. In the housing accommodation cavity of the PECVD-magnetron sputtering co-deposition doping film layer device, a chemical vapor deposition mechanism and a magnetron sputtering mechanism are provided. During the PECVD process of the chemical vapor deposition mechanism on the target substrate of the substrate connecting component, the target substrate surface can be co-deposited by the magnetron sputtering mechanism, so that the thin film formed by PECVD can be particle-doped by magnetron sputtering. Among them, a sputtering adjustment mechanism is provided between the magnetron sputtering mechanism and the substrate connecting component, which can not only accurately control the sputtering rate of the magnetron sputtering mechanism, but also improve the deposition uniformity of the magnetron sputtering mechanism. Description of the Drawings

[0032] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0033] Figure 1 It is a three-dimensional structure schematic diagram of a PECVD-magnetron sputtering co-deposition doping film layer device provided by the embodiment of the present application;

[0034] Figure 2 It is a partial three-dimensional structure schematic diagram of a PECVD-magnetron sputtering co-deposition doping film layer device provided by the embodiment of the present application;

[0035] Figure 3 It is a three-dimensional structure schematic diagram of a magnetron sputtering mechanism provided by the embodiment of the present application;

[0036] Figure 4 It is a three-dimensional structure schematic diagram of a sputtering adjustment mechanism provided by the embodiment of the present application;

[0037] Figure 5Schematic three-dimensional structure diagram of the second adjustment component provided by the embodiment of the present application in the first position;

[0038] Figure 6 Schematic three-dimensional structure diagram of the second adjustment component provided by the embodiment of the present application in the second position.

[0039] Explanation of reference numerals:

[0040] 100, PECVD-magnetron sputtering co-deposition doping film device; 10, housing; 20, substrate connection component; 30, chemical vapor deposition mechanism; 40, magnetron sputtering mechanism; 50, sputtering adjustment mechanism; 60, first driving mechanism; 70, gas supply mechanism; 11, accommodation cavity; 21, heating part; 41, target magnetron sputtering component; 42, first magnetron sputtering component; 43, second magnetron sputtering component; 44, third magnetron sputtering component; 51, first adjustment component; 52, first baffle; 53, first driving component; 54, first gear part; 55, connecting piece; 56, second adjustment component; 57, second baffle; 58, second driving component; 59, through hole; 71, first gas supply component; 72, first gas supply port; 73, second gas supply component; 74, second gas supply port;

[0041] The realization, functional features and advantages of the object of the present invention will be further described with reference to the embodiments and the accompanying drawings. Detailed implementation manners

[0042] Next, the technical solutions in the embodiments of the present application will be clearly and completely described with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0043] In the description of the present application, unless otherwise clearly defined and limited, the terms "installed", "connected" and "connected" shall be understood in a broad sense. For example, it may be a fixed connection, a detachable connection or an integral connection; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific situations.

[0044] It can be understood that the descriptions involving "first", "second", etc. are only for descriptive purposes, and cannot be understood as indicating or implying their relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features.

[0045] The following will describe in detail some embodiments of the present application in conjunction with the accompanying drawings. Without conflict, the features of the following embodiments can be combined with each other.

[0046] Please refer to Figures 1 to 3 , Figure 1 which is a schematic three-dimensional structure diagram of a PECVD-magnetron sputtering co-deposition doped film layer device provided by an embodiment of the present application, Figure 2 and is a partial schematic three-dimensional structure diagram of a PECVD-magnetron sputtering co-deposition doped film layer device provided by an embodiment of the present application, Figure 3 and is a schematic three-dimensional structure diagram of a magnetron sputtering mechanism provided by an embodiment of the present application.

[0047] As Figures 1 to 3 shown, the PECVD-magnetron sputtering co-deposition doped film layer device 100 is provided with a substrate connection component 20 for fixing the substrate to be deposited. Moreover, the PECVD-magnetron sputtering co-deposition doped film layer device 100 further includes: a housing 10, a chemical vapor deposition mechanism 30, a magnetron sputtering mechanism 40, and a sputtering adjustment mechanism 50.

[0048] Among them, the housing 10 forms a receiving cavity 11. There is a gas supply mechanism 70 for introducing reaction gas in the receiving cavity 11. And the substrate connection component 20 is arranged in the receiving cavity 11 and is located at one end of the receiving cavity 11 close to the chemical vapor deposition mechanism 30.

[0049] The chemical vapor deposition mechanism 30 is at least partially received in the receiving cavity 11 and is used to perform ionization operation on the reaction gas introduced into the receiving cavity 11 to obtain plasma clusters, and to deposit the plasma clusters generated by ionization onto the target surface of the substrate to be deposited. It can be understood that the chemical vapor deposition mechanism 30 performs plasma-enhanced chemical vapor deposition on the substrate to be deposited to form a thin film on the target surface.

[0050] The magnetron sputtering mechanism 40 is at least partially received in the receiving cavity 11 and corresponds to the position of the substrate connection component 20 for fixing the substrate to be deposited. The magnetron sputtering mechanism 40 includes a radio frequency power supply, and a target is fixed at one end close to the substrate connection component 20. The radio frequency power supply can ionize the reaction gas in the receiving cavity 11 to form high-energy particles. The high-energy ions bombard the target, causing the target atoms to be sputtered out and sputter-deposited onto the target surface of the substrate to be deposited. It can be understood that the magnetron sputtering mechanism 40 performs magnetron sputtering deposition on the substrate to be deposited to obtain a thin film.

[0051] The sputtering adjustment mechanism 50 is arranged between the magnetron sputtering mechanism 40 and the substrate connection component 20 and is close to the end of the magnetron sputtering mechanism 40 where the target is fixed, and is used to adjust the flow rate of the target atoms output by the magnetron sputtering mechanism 40 to the target surface.

[0052] With such a setting, on the one hand, a chemical vapor deposition mechanism 30 and a magnetron sputtering mechanism 40 are provided in the accommodation cavity 11, so that during the process of performing PECVD on the target substrate of the substrate connection component 20 by the chemical vapor deposition mechanism 30, the magnetron sputtering mechanism 40 can perform co-deposition on the surface of the target substrate, so that particle doping can be performed by magnetron sputtering while performing PECVD; on the other hand, the sputtering adjustment mechanism 50 is arranged between the magnetron sputtering mechanism 40 and the substrate connection component 20, which is convenient for precisely controlling the deposition rate of the magnetron sputtering mechanism 40.

[0053] In some embodiments, the PECVD-magnetron sputtering co-deposition doping film device 100 has a switchable first working mode and second working mode.

[0054] Among them, in the first working mode, one of the chemical vapor deposition mechanism 30 and the magnetron sputtering mechanism 40 operates, that is, the PECVD-magnetron sputtering co-deposition doping film device 100 can independently operate the chemical vapor deposition mechanism 30 to perform plasma enhanced chemical vapor deposition on the target substrate, or independently operate the magnetron sputtering mechanism 40 to perform magnetron sputtering deposition on the target substrate.

[0055] In the second working mode, both the chemical vapor deposition mechanism 30 and the magnetron sputtering mechanism 40 operate, that is, during the process of performing plasma enhanced chemical vapor deposition on the target substrate by the chemical vapor deposition mechanism 30, the magnetron sputtering mechanism 40 can be simultaneously operated to output target atoms to the surface of the target substrate for co-deposition, so that particle doping can be performed by magnetron sputtering during the plasma enhanced chemical vapor deposition process, thereby changing the performance of the thin film.

[0056] For example, the PECVD-magnetron sputtering co-deposition doping film device 100 can prepare a diamond-like carbon film doped with Ag in the second working mode. By the gas supply mechanism 70, a certain proportion of CH4 and Ar are introduced into the accommodation cavity 11, and the chemical vapor deposition mechanism 30 is turned on to ionize CH4 to form C* and H*. Among them, C* deposits on the substrate to be deposited of the substrate connection component 20 to form a carbon film. While performing PECVD, the magnetron sputtering mechanism 40 is fixed with an Ag target and turned on. Ar is ionized into Ar by the radio frequency power supply * Ar * Under the magnetic field of the magnetron sputtering mechanism 40, the Ag target is bombarded, so that the Ag particles in the Ag target are sputtered towards the carbon film of the substrate to be deposited.

[0057] Under the co-deposition of the chemical vapor deposition mechanism 30 and the magnetron sputtering mechanism 40, a diamond-like carbon film doped with Ag is deposited on the substrate to be deposited, and the doping of Ag improves the optical and electrical properties of the diamond-like carbon film.

[0058] The setting of the two working modes not only enables the PECVD-magnetron sputtering co-deposition doping film device 100 to have higher process flexibility and scenario adaptation ability, can achieve a wider working range coverage through the switching of working modes, improve the practicability and utilization rate of the device, but also in the second working mode, the chemical vapor deposition mechanism 30 and the magnetron sputtering mechanism 40 can be co-deposited to change the performance of the thin film.

[0059] In some embodiments, the magnetron sputtering mechanism 40 includes a first magnetron sputtering component 42, a second magnetron sputtering component 43, and a third magnetron sputtering component 44, and their positions arranged in the accommodation cavity 11 can be different.

[0060] Among them, the first magnetron sputtering component 42 is used to output target atoms to the first area of the target surface of the substrate to be deposited, the second magnetron sputtering component 43 is used to output target atoms to the second area of the target surface of the substrate to be deposited, the third magnetron sputtering component 44 is used to output target atoms to the third area of the target surface of the substrate to be deposited, and the first area, the second area, and the third area of the target surface completely overlap.

[0061] With such an arrangement, it is ensured that the deposition areas of the first magnetron sputtering component 42, the second magnetron sputtering component 43, and the third magnetron sputtering component 44 are the same, thereby ensuring the uniformity and surface thickness consistency of the thin film formed on the target surface.

[0062] Moreover, the magnetron sputtering mechanism 40 can, according to the needs of deposition coating, only turn on and operate any number of magnetron sputtering components.

[0063] For example, the magnetron sputtering mechanism 40 can only turn on any one of the first magnetron sputtering component 42, the second magnetron sputtering component 43, and the third magnetron sputtering component 44, and not turn on the remaining two; it can also only turn on any two of the first magnetron sputtering component 42, the second magnetron sputtering component 43, and the third magnetron sputtering component 44, and not turn on the remaining one. The flexible use of multiple magnetron sputtering components can flexibly meet more usage situations, so that the magnetron sputtering mechanism 40 has more diverse usage scenarios and requirements.

[0064] The PECVD-magnetron sputtering co-deposition doping film device 100 includes a target magnetron sputtering component 41, and the target magnetron sputtering component 41 includes at least one of the first magnetron sputtering component 42, the second magnetron sputtering component 43, and the third magnetron sputtering component 44.

[0065] The sputtering adjustment mechanism 50 is disposed between the target magnetron sputtering assembly 41 and the substrate connection member 20, and closer to one end of the target magnetron sputtering assembly 41, and is used to adjust the flow rate of the target atoms output by the target magnetron sputtering assembly 41 to the target surface of the substrate to be deposited. Among them, the sputtering adjustment mechanism 50 can be set corresponding to a single magnetron sputtering assembly in the target magnetron sputtering assembly 41, or can be set corresponding to multiple magnetron sputtering assemblies in the target magnetron sputtering assembly 41 at the same time.

[0066] In this embodiment, the sputtering adjustment mechanism 50 is set corresponding to a single magnetron sputtering assembly in the target magnetron sputtering assembly 41, which not only helps to control the sputtering rate of the magnetron sputtering mechanism 40, but also helps to improve the uniformity of magnetron sputtering.

[0067] Moreover, to meet the requirements of more diverse deposited films, the first magnetron sputtering assembly 42, the second magnetron sputtering assembly 43, and the third magnetron sputtering assembly 44 can not only be configured with target materials of the same material to increase the efficiency of magnetron sputtering, but also can be respectively configured with target materials of different materials, so that the first magnetron sputtering assembly 42, the second magnetron sputtering assembly 43, and the third magnetron sputtering assembly 44 can be configured to output different target atoms to the target surface of the substrate to be deposited.

[0068] With such a setting, the PECVD-magnetron sputtering co-deposition doping film layer device 100 can dope multiple substances at the same time, so that the PECVD-magnetron sputtering co-deposition doping film layer device 100 has more diverse usage scenarios and meets more requirements.

[0069] In some embodiments, the gas supply mechanism 70 includes a first gas supply component 71. The first gas supply component 71 is provided with at least two first gas supply ports 72, and both the first magnetron sputtering assembly 42 and the second magnetron sputtering assembly 43 correspond to at least one first gas supply port 72. The gas supply mechanism 70 further includes a second gas supply component 73. The second gas supply component 73 is disposed in the chemical vapor deposition mechanism 30. Among them, the second gas supply component 73 is provided with a plurality of second gas supply ports 74. The plurality of second gas supply ports 74 are located inside the chemical vapor deposition mechanism 30 and are spaced apart and annularly arranged around the circumference of the substrate to be deposited.

[0070] In this embodiment, the first gas supply component 71 is not only close to the first magnetron sputtering assembly 42, the second magnetron sputtering assembly 43, and the third magnetron sputtering assembly 44, but also the first gas supply component 71 further includes three first gas supply ports 72 respectively corresponding to the first magnetron sputtering assembly 42, the second magnetron sputtering assembly 43, and the third magnetron sputtering assembly 44. Among them, the horizontal height of the first gas supply port 72 on the first gas supply component 71 is equal to that of the magnetron sputtering mechanism 40.

[0071] For example, during the process of preparing a diamond-like carbon film doped with Ag in the second working mode by the PECVD-magnetron sputtering co-deposition doping film device 100, the magnetron sputtering mechanism 40 and the chemical vapor deposition mechanism 30 need to supply Ar and CH4 respectively. Among them, Ar is introduced into the magnetron sputtering mechanism 40 through the first gas supply port 72 of the first gas supply component 71. Moreover, the distances between the first gas supply port 72 and the first magnetron sputtering component 42, the second magnetron sputtering component 43, and the third magnetron sputtering component 44 are close, which can improve the sputtering efficiency of the magnetron sputtering mechanism. CH4 is introduced into the chemical vapor deposition mechanism 30 through the second gas supply port 74 of the second gas supply component 73. Also, the distance between the second gas supply port 74 and the chemical vapor deposition mechanism 30 is close, which can improve the deposition efficiency of PECVD.

[0072] The first gas supply component 71 and the second gas supply component 73 are respectively arranged corresponding to the adjacent positions of the magnetron sputtering mechanism 40 and the chemical vapor deposition mechanism 30. With such an arrangement, when the gas supply mechanism 70 inputs two working gases into the magnetron sputtering mechanism 40 and the chemical vapor deposition mechanism 30 respectively, it can not only reduce the influence between the two working gases on each other, but also improve the working efficiency of the two mechanisms.

[0073] In some embodiments, the chemical vapor deposition mechanism 30 is disposed around the circumference of the substrate connection component 20, and the substrate connection component 20 can rotate relative to the chemical vapor deposition mechanism 30. During the magnetron sputtering coating process, the rotation of the substrate connection component 20 can make the coating formed by magnetron sputtering on the substrate to be deposited more uniform. Moreover, the substrate connection component 20 is provided with a heating part 21 for increasing the temperature of the substrate to be deposited. The setting of the heating part 21 can not only provide a suitable temperature according to the coating conditions, but also improve the deposition efficiency.

[0074] Among them, the PECVD-magnetron sputtering co-deposition doping film device 100 is further provided with a first driving mechanism 60, and the first driving mechanism 60 is used to drive at least one of the substrate connection component 20 and the chemical vapor deposition mechanism 30 to move, so as to adjust the distance between the substrate connection component 20 and the magnetron sputtering mechanism 40.

[0075] When only the magnetron sputtering mechanism 40 operates for magnetron sputtering in the first working mode, the first driving mechanism 60 can only drive the substrate connection component 20 to move away from or close to the magnetron sputtering mechanism 40. During this process, the substrate connection component 20 and the chemical vapor deposition mechanism 30 move relative to each other.

[0076] When the chemical vapor deposition mechanism 30 and the magnetron sputtering mechanism 40 are operating in the second working mode, the first driving mechanism 60 can drive the substrate connecting member 20 and the chemical vapor deposition mechanism 30 to move away from or closer to the magnetron sputtering mechanism 40 at the same time. During the movement, the distance between the substrate connecting member 20 and the chemical vapor deposition mechanism 30 remains relatively fixed.

[0077] With such a setting, by controlling the adjustment of the distance between the substrate connecting member 20 and the magnetron sputtering mechanism 40, the sputtering rate of magnetron sputtering and the content of target atoms in the coating formed on the substrate to be deposited in the substrate connecting member 20 can be controlled. Moreover, during the operation of PECVD, the relative distance between the substrate connecting member 20 and the chemical vapor deposition mechanism 30 will not be affected.

[0078] Please refer to Figure 4 , Figure 4 which is a schematic three-dimensional structure diagram of a sputtering adjustment mechanism provided by an embodiment of the present application.

[0079] As Figure 4 shown, in some embodiments, the sputtering adjustment mechanism 50 includes a first adjustment component 51 for adjusting the output rate of target atoms. The first adjustment component 51 includes a first baffle 52, a first driving member 53 and a connecting member 55. Among them, the first baffle 52 is rotatably connected to the connecting member 55.

[0080] The first baffle 52 is arranged between the magnetron sputtering mechanism 40 and the substrate connecting member 20, and a plurality of through holes 59 are formed on the first baffle 52. The first driving member 53 is connected to the first baffle 52 and can drive the first baffle 52 to rotate and adjust the rotation speed of the first baffle 52.

[0081] By rotating the first baffle 52 of the sputtering adjustment mechanism 50, the through holes 59 formed on the first baffle 52 can not only allow some target atoms to pass through, but also block the deposition of some atoms. Among them, the rotation speed of the first baffle 52 is negatively correlated with the flow rate of target atoms output by the magnetron sputtering mechanism 40 to the target surface.

[0082] It can be understood that during the operation of the magnetron sputtering mechanism 40, the first driving component 53 drives the first baffle 52 to rotate and adjusts the rotation speed of the first baffle 52. When the rotation speed of the first baffle 52 slows down, the number of atoms passing through the through-hole 59 on the first baffle 52 increases, and the atomic deposition rate on the substrate to be deposited accelerates; when the rotation speed of the first baffle 52 increases, the number of atoms passing through the through-hole 59 on the first baffle 52 decreases, and the atomic deposition rate on the substrate to be deposited slows down. The sputtering adjustment mechanism 50 adjusts the output flow of target atoms by adjusting the rotation speed of the first baffle 52, realizing precise control of the magnetron sputtering deposition rate, and thus can precisely control the content of target atoms in the substrate to be deposited.

[0083] For example, Ag is one of the metals with a high sputtering rate. During the sputtering process of an Ag target, the sputtering rate of its Ag atoms is relatively fast, making it difficult to precisely control the content of the doped element silver in the substrate to be deposited. By arranging the first adjustment component 51 above the Ag target and controlling the rotation speed of the first baffle 52, the number of Ag particles sputtering through the through-hole 59 is controlled, thereby precisely controlling the content of Ag atoms in the substrate to be deposited.

[0084] With such a setting, the sputtering adjustment mechanism 50 can, through the first adjustment component 51, not only control the deposition rate of some materials with a high sputtering rate, thereby precisely controlling the content of high-sputtering-rate particles in the deposited thin film, but also improve the deposition uniformity of the thin film formed by the magnetron sputtering mechanism 40 on the substrate surface. Moreover, the structure of the first adjustment component 51 is simple and practical, improving the maintenance convenience and use stability of the PECVD-magnetron sputtering co-deposition doping film device 100.

[0085] In some embodiments, the first adjustment component 51 further includes a second driving component. The second driving component is connected to one end of the connecting member 55, and the other end of the connecting member 55 is connected to the first baffle 52. Driven by the second driving component, the first baffle 52 can be driven by the connecting member 55 to move relative to the sputtering adjustment mechanism 50, so that the first baffle 52 can approach or move away from the sputtering adjustment mechanism 50.

[0086] It can be understood that in the case where the sputtering adjustment mechanism 50 processes a target with a high sputtering rate, the second driving component can be used to drive the connecting member 55 to drive the first baffle 52 to approach the sputtering adjustment mechanism 50 and stay fixed above the target, and then the first driving component 53 is used to drive the first baffle 52 to rotate, so that the first baffle 52 can control the deposition rate of the target with a high sputtering rate.

[0087] When the sputtering adjustment mechanism 50 processes a target that does not require control of the deposition rate, the second driving component can drive the first baffle 52 away from the sputtering adjustment mechanism 50 through the connecting member 55, so that the target can directly face the substrate to be deposited of the substrate connecting component 20 without obstruction.

[0088] With such a setting, the PECVD-magnetron sputtering co-deposition doping film device 100 can adopt corresponding processing means for targets of different materials, so that the PECVD-magnetron sputtering co-deposition doping film device 100 can cope with more usage scenarios, thereby improving the usage efficiency of the device.

[0089] In some embodiments, a plurality of through holes 59 are arranged at intervals on the first baffle 52. A first gear portion 54 is disposed around the periphery of the first baffle 52. Moreover, the first baffle 52 is engaged with the first driving component 53 through the first gear portion 54, so that the first driving component 53 can drive the first baffle 52 to rotate through the first gear portion 54 and adjust the rotation speed of the first baffle 52.

[0090] By disposing the first gear portion 54 around the periphery of the first baffle 52, during the process of rotating the first baffle 52 to adjust the sputtering rate, the first gear portion 54 and the first driving component 53 will not block the sputtering path passing through the first baffle 52.

[0091] Wherein, there is a first distance L between the first baffle 52 and the magnetron sputtering mechanism 40, and the first distance L is 5 cm.

[0092] With such a setting, in order to make the first baffle 52 almost completely cover the magnetron sputtering mechanism 40, which is beneficial to the control of the deposition rate of sputtered atoms by the first adjustment component 51, while there is a certain distance between the first baffle 52 and the magnetron sputtering mechanism 40, it can ensure that the ionized Ar* can bombard the target below the first baffle 52. Therefore, maintaining a suitable distance between the first baffle 52 and the target of the magnetron sputtering mechanism 40 can ensure the efficiency of Ar* bombarding the target.

[0093] Please refer to Figure 5 and Figure 6 , Figure 5 which is a three-dimensional structural schematic diagram of the second adjustment component provided by the embodiment of the present application in the first position, Figure 6 which is a three-dimensional structural schematic diagram of the second adjustment component provided by the embodiment of the present application in the second position.

[0094] As Figure 5 and Figure 6As shown, in some embodiments, the sputtering adjustment mechanism 50 further includes a second adjustment component 56. The second adjustment component 56 includes a second baffle 57 and a second drive component 58. Among them, the second baffle 57 is disposed between the first adjustment component 51 and the magnetron sputtering mechanism 40, and is in close contact with one end of the magnetron sputtering mechanism 40 where the target is placed.

[0095] The second drive component 58 is connected to the second baffle 57 and is used to drive the second baffle 57 to move, so that the second baffle 57 can rotate relative to the magnetron sputtering mechanism 40 to a first position or a second position. Among them, the region where the magnetron sputtering mechanism 40 outputs target atoms forms a magnetron sputtering surface. When the second baffle 57 rotates to the first position and the second position relative to the magnetron sputtering mechanism 40 respectively, the second baffle 57 forms a first projection and a second projection in the direction perpendicular to the magnetron sputtering surface respectively, and the area of the first projection covering the magnetron sputtering surface is larger than the area of the second projection covering the magnetron sputtering surface.

[0096] It can be understood that when the second baffle 57 rotates to the first position, the second baffle 57 can cover and cover the target of the first magnetron sputtering component 42, so that the first projection overlaps with the target at one end of the first magnetron sputtering component 42.

[0097] When the second baffle 57 rotates to the second position, the second baffle 57 completely exposes the target of the first magnetron sputtering component 42, so that the second projection does not overlap with the target at one end of the first magnetron sputtering component 42.

[0098] For example, when the first magnetron sputtering component 42 needs to perform magnetron sputtering while the second magnetron sputtering component 43 does not need to perform magnetron sputtering, the second baffle 57 of the first magnetron sputtering component 42 rotates to the second position, so that the target of the first magnetron sputtering component 42 is not blocked and is exposed for magnetron sputtering. At the same time, the second baffle 57 of the second magnetron sputtering component 43 rotates to the first position, so that the target of the second magnetron sputtering component 43 is covered and will not be contaminated by the atoms sputtered by the first magnetron sputtering component 42.

[0099] With such a setting, when some magnetron sputtering components in the magnetron sputtering mechanism 40 perform magnetron sputtering, the second adjustment component 56 can prevent the targets of other magnetron sputtering components in the magnetron sputtering mechanism 40 from being contaminated, greatly improving the use experience of the PECVD-magnetron sputtering co-deposition doping film device 100. Moreover, the closer contact of the second baffle 57 can reduce the exposed area of the target of the magnetron sputtering component, thus reducing the possibility of the target being contaminated.

[0100] In some embodiments, the PECVD-magnetron sputtering co-deposited doped film layer device 100 further includes a vacuum mechanism, which can be used to perform a vacuum pumping operation on the accommodation cavity 11 before introducing the reaction gas.

[0101] It should be understood that the terms used in the specification of the present application are only for the purpose of describing specific embodiments and are not intended to limit the present application. As used in the specification of the present application and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include the plural forms.

[0102] It should also be understood that the term "and / or" used in the specification of the present application and the appended claims refers to any combination and all possible combinations of one or more of the related listed items, and includes these combinations. It should be noted that in this article, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or system including a series of elements not only includes those elements, but also includes other elements not expressly listed, or elements inherent to such process, method, article or system. Without further limitation, an element defined by the statement "including a..." does not exclude the existence of additional identical elements in the process, method, article or system including the element.

[0103] The serial numbers of the embodiments of the present application described above are only for description and do not represent the advantages and disadvantages of the embodiments. The above are only specific embodiments of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present application can easily think of various equivalent modifications or substitutions, and these modifications or substitutions should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A PECVD - magnetron sputtering co - deposition doped film device, characterized in that, A substrate connection component for fixing a substrate to be deposited is provided, and the PECVD-magnetron sputtering co-deposition doping film layer device includes: A housing that forms an accommodation cavity. The accommodation cavity further has a gas supply mechanism for introducing reaction gases, and the substrate connection component is located in the accommodation cavity; A chemical vapor deposition mechanism, at least partially accommodated in the accommodation cavity, and configured to ionize the reaction gases in the accommodation cavity so that the plasma clusters generated by ionization are deposited on the target surface of the substrate to be deposited, thereby forming a thin film on the target surface; A magnetron sputtering mechanism, at least partially accommodated in the accommodation cavity, and configured to output target atoms to the target surface of the substrate to be deposited; A sputtering adjustment mechanism, disposed between the magnetron sputtering mechanism and the substrate connection component, and configured to adjust the flow rate of the target atoms output by the magnetron sputtering mechanism to the target surface.

2. The PECVD-magnetron sputtering co-deposited doped film device according to claim 1, wherein The PECVD-magnetron sputtering co-deposition doping film layer device has switchable first and second working modes. In the first working mode, one of the chemical vapor deposition mechanism and the magnetron sputtering mechanism operates, and when the magnetron sputtering mechanism operates, the flow rate of the target atoms output by the magnetron sputtering mechanism to the target surface can be adjusted by the sputtering adjustment mechanism; In the second working mode, both the chemical vapor deposition mechanism and the magnetron sputtering mechanism operate, and the flow rate of the target atoms output by the magnetron sputtering mechanism to the target surface can be adjusted by the sputtering adjustment mechanism.

3. The PECVD-magnetron sputtering co-deposition doped film device according to claim 1, characterized in that, The magnetron sputtering mechanism at least includes a first magnetron sputtering component and a second magnetron sputtering component. The first magnetron sputtering component is configured to output the target atoms to a first region of the target surface of the substrate to be deposited, and the second magnetron sputtering component is configured to output the target atoms to a second region of the target surface of the substrate to be deposited. At least part of the first region and the second region overlap; The sputtering adjustment mechanism is provided corresponding to the target magnetron sputtering component and is configured to adjust the flow rate of the target atoms output by the target magnetron sputtering component to the target surface of the substrate to be deposited. The target magnetron sputtering component includes at least one of the first magnetron sputtering component and the second magnetron sputtering component; Wherein, the first magnetron sputtering component and the second magnetron sputtering component are configured to output different target atoms to the target surface of the substrate to be deposited, or the first magnetron sputtering component and the second magnetron sputtering component are configured to output the same target atoms to the target surface of the substrate to be deposited.

4. The PECVD-magnetron sputtering co-deposition doped film device according to claim 3, characterized in that, The gas supply mechanism includes a first gas supply component. The first gas supply component is provided with at least two first gas supply ports, and both the first magnetron sputtering component and the second magnetron sputtering component at least correspond to one of the first gas supply ports; And / or, the gas supply mechanism includes a second gas supply component, which is arranged in the chemical vapor deposition mechanism. Among them, the second gas supply component is provided with a plurality of second gas supply ports, and the plurality of second gas supply ports are located inside the chemical vapor deposition mechanism and are arranged at intervals around the circumference of the substrate to be deposited.

5. The PECVD-magnetron sputtering co-deposited doped film device according to claim 1, wherein The chemical vapor deposition mechanism is arranged around the circumference of the substrate connection component, and the substrate connection component can rotate relative to the chemical vapor deposition mechanism, and the substrate connection component is provided with a heating part; Among them, the PECVD-magnetron sputtering co-deposition doping film device is also provided with a first driving mechanism, and the first driving mechanism is used to drive at least one of the substrate connection component and the chemical vapor deposition mechanism to move, so as to adjust the distance between the substrate connection component and the magnetron sputtering mechanism.

6. The PECVD-magnetron sputtering co-deposited doped film device according to any one of claims 1-5, characterized in that The sputtering adjustment mechanism includes a first adjustment component, and the first adjustment component includes a connecting piece, a first baffle and a first driving component; The first baffle is arranged between the magnetron sputtering mechanism and the substrate connection component and is rotatably connected to the connecting piece, and a through hole is formed on the first baffle; The first driving component is connected to the first baffle and is used to drive the first baffle to rotate and adjust the rotation speed of the first baffle; Among them, the rotation speed of the first baffle is negatively correlated with the flow rate of the target atoms output from the magnetron sputtering mechanism to the target surface.

7. The PECVD-magnetron sputtering co-deposited doped film device according to claim 6, characterized in that, The first adjustment component further includes a second driving component, and the second driving component is connected to the connecting piece and is used to drive the connecting piece to displace relative to the magnetron sputtering mechanism, so that the first baffle approaches or moves away from the magnetron sputtering mechanism.

8. The PECVD-magnetron sputtering co-deposited doped film device according to claim 6, characterized in that, The plurality of through holes are arranged on the first baffle at intervals, and a first gear part is arranged on the circumference of the first baffle, and the first driving component meshes with the first gear part to adjust the rotation speed of the first baffle; Among them, there is a first distance L between the first baffle and the magnetron sputtering mechanism, and the first distance L satisfies 2≤L≤8 cm.

9. The PECVD-magnetron sputtering co-deposition doped film device according to claim 6, wherein The sputtering adjustment mechanism further includes a second adjustment component. Among them, the second adjustment component includes a second baffle and a second driving component. The second baffle is arranged between the first adjustment component and the magnetron sputtering mechanism, and the second driving component is used to drive the second baffle to move, so that the second baffle rotates relative to the magnetron sputtering mechanism to a first position or a second position; Among them, the area where the magnetron sputtering mechanism outputs the target atoms forms a magnetron sputtering surface. When the second baffle rotates relative to the magnetron sputtering mechanism to the first position, the second baffle forms a first projection in the direction perpendicular to the magnetron sputtering surface; When the second baffle rotates relative to the magnetron sputtering mechanism to the second position, the second baffle forms a second projection in the direction perpendicular to the magnetron sputtering surface; The area of the magnetron sputtering surface covered by the first projection is larger than the area of the magnetron sputtering surface covered by the second projection.

10. The PECVD-magnetron sputtering co-deposition doped film device according to any one of claims 1-5, characterized in that, The PECVD-magnetron sputtering co-deposition doped film layer device further includes a vacuum mechanism, and the vacuum mechanism is used to perform a vacuum pumping operation on the accommodation cavity.

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