A test algorithm for screening security indicators of memory chips

Abstract

The application relates to the technical field of storage chip testing, and particularly discloses a test algorithm for screening the safety index of a storage chip, which comprises the following steps: first, a plurality of monitoring environments with different temperatures are established according to fixed temperature difference intervals; the read-write data of each read-write operation in the read-write test of the storage chip is combined, so that the read-write abnormality coefficient of each storage chip in the read-write operation is calculated; the data reflects whether the read-write state of the storage chip in the read-write operation is qualified in different test environments; then, the test data of each storage chip in the read-write test is combined to analyze the read-write stability, the read-write times of each storage chip are estimated according to the data, and the safety of the storage chip is analyzed according to the preset read-write operation time threshold value; thus, the read-write operation test can be reduced, and the test efficiency of the safety of the storage chip is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of storage chip testing, in particular to a test algorithm for screening storage chip safety indicators. BACKGROUND

[0002] Storage chip safety testing is a means for evaluating the safety of storage chips, mainly including basic performance testing, environmental adaptability testing, stress testing, mechanical performance testing and other tests under specific conditions, which helps to ensure the stability and reliability of storage chips under various environments and use conditions.

[0003] Since storage chips are widely used and their application environment is variable, the environmental adaptability test is extremely important for testing the safety of different types of storage chips. In order to test the safety of storage chips working in high and low temperature environments, multiple sets of monitoring environments with different temperatures are usually established, and read-write operations of storage chips are performed in each monitoring environment. Then, whether the read-write operation frequency of each storage chip reaches the preset read-write operation test frequency threshold is determined to judge the environmental adaptability of the storage chip, so as to evaluate the safety of the storage chip based on its environmental adaptability, and screen different types of storage chips according to the evaluation results.

[0004] The traditional environmental adaptability test of storage chips is generally to place the storage chips in different temperature monitoring environments, and to determine the environmental adaptability of the storage chips according to whether the read-write operation frequency of the storage chips reaches the preset read-write operation test frequency threshold. Although this method is accurate, it needs to be compared with the preset read-write operation test frequency threshold, and a large amount of time is needed for read-write operation test, thereby affecting the test efficiency of the safety of the storage chip. SUMMARY

[0005] The purpose of the present application is to provide a test algorithm for screening storage chip safety indicators, which solves the following technical problems:

[0006] How to improve the test efficiency of the safety of the storage chip.

[0007] The purpose of the present application can be achieved by the following technical solutions:

[0008] A test algorithm for screening storage chip safety indicators, the algorithm comprising the following steps:

[0009] S1: First, set multiple sets of test environments with different temperatures according to a fixed temperature interval, and place each same type of storage chip in each test environment for read-write test;

[0010] S2: collecting real-time read-write data generated by each storage chip in each read-write operation through the data acquisition module;

[0011] S3: mapping the collected read-write data to the read-write abnormality coefficient of each storage chip in the corresponding read-write operation process one by one, and calculating the read-write abnormality coefficient;

[0012] S4: analyzing whether there is an abnormality in the read-write operation by combining the read-write abnormality coefficient of each storage chip in the read-write operation, and marking the abnormal read-write operation;

[0013] S5: calculating the read-write abnormality coefficient fluctuation value of each storage chip in the read-write test by combining the test data of all storage chips in the read-write test, and analyzing the read-write stability of each storage chip according to the data;

[0014] S6: estimating the read-write times of each storage chip by combining the read-write abnormality coefficient fluctuation value of each storage chip in the read-write test, analyzing the safety of the storage chip by combining the preset read-write operation times threshold, and selecting the storage chip according to the analysis result.

[0015] Further, the calculation process in S3 includes:

[0016] The read-write abnormality coefficient y of the a-th storage chip in the i-th read-write operation is calculated by the formula ai ;

[0017] Wherein, a is any test storage chip, and each storage chip corresponds to a monitoring environment, i is any read-write operation in a read-write test, dq ai is the read time of the a-th storage chip in the i-th read-write operation, dq y is the preset read time, xr ai is the write time of the a-th storage chip in the i-th read-write operation, xr y is the preset write time, sj y is the preset total duration of a read-write operation, dx ai is the read-write error times of the a-th storage chip in the i-th read-write operation, dx y is the preset read-write error times, dx b is the standard value of dx ai , xp y is the preset storage space size of the storage chip, xp ai is the storage space size of the a-th storage chip after the i-th read-write operation, f z ​(x) is a defined function, if f z (x) ≥ 1, let f z (x) = x, if f z (x) < x, let f z (x) = 1.

[0018] Further, the comparison process in the S4 includes:

[0019] By comparing the read-write abnormal coefficient y ai of the a-th storage chip in the i-th read-write operation process with the preset read-write abnormal coefficient threshold y 01 ;

[0020] If y ai ≥ y 01 , it is judged that the a-th storage chip has read-write abnormality in the read-write operation process, and the read-write operation is marked;

[0021] If y ai < y 01 , it is judged that the a-th storage chip has no read-write abnormality in the read-write operation process, and the read-write operation does not need to be marked.

[0022] Further, the analysis process in the S5 includes:

[0023] The read-write abnormal coefficient fluctuation value y of the a-th storage chip in a read-write test is obtained by the formula

[0024] Wherein, n is the total number of read-write operations in a read-write test, is the average of all y ai , is the maximum of all y ai , is the minimum of all y ai , sl a is the read-write operation abnormal number of the a-th storage chip in a read-write test, sl y is the preset read-write operation abnormal number, and g is the proportional coefficient, which is set according to empirical fitting.

[0025] Further, the analysis process in the S5 also includes:

[0026] By comparing the read-write abnormal coefficient fluctuation value y of all storage chips in a read-write test with the preset fluctuation value threshold ;

[0027] If any is greater than or equal to It is judged that the read-write stability of the storage chip is poor, that is, when the storage chip is used based on the monitoring environment of the storage chip, the read-write of the storage chip is prone to abnormality, which indicates that the storage chip cannot adapt to different monitoring environments, and it is judged that the safety of the storage chip is poor.

[0028] If all are less than It is judged that the read-write stability of all storage chips is good, that is, when the storage chips are used in all monitoring environments established by the storage chips, the read-write of the storage chips is not prone to abnormality, which indicates that the storage chips can adapt to different monitoring environments, and it is judged that the safety of the storage chips is high.

[0029] Further, the analysis process in S6 includes:

[0030] By combining the test data of the a-th storage chip in the first read-write test, the read-write abnormality coefficient change curve w a (t)

[0031] The estimated read-write times p a of the a-th storage chip are calculated by the formula .

[0032] Where t1 is the first read-write operation in the first read-write test, t2 is the last read-write operation in the first read-write test, f k is an adjustment coefficient lookup table function, and the influence degree of the value range of the empirical data on the read-write times of the storage chip is obtained based on the test data.

[0033] Further, the analysis process in S6 further includes:

[0034] By comparing all the estimated read-write times p a of the storage chips with the preset read-write times threshold p 01 .

[0035] If any p a is less than or equal to p 01 , it is judged that the read-write life of the storage chip in its corresponding monitoring environment is lower than the threshold, that is, the environmental adaptability of the storage chip is poor, and it is judged that the safety index of the storage chip is poor.

[0036] If all p a are greater than p 01 , it is judged that the read-write life of all storage chips in their corresponding monitoring environments is higher than the threshold, that is, the environmental adaptability of the storage chip is strong, and it is judged that the safety index of the storage chip is high.

[0037] ​Further, the maximum temperature value of all the monitoring environments in the S1 does not exceed 85℃, and the minimum temperature value is not lower than -45℃.

[0038] Advantages of the present application:

[0039] (1) The present application can calculate the read-write abnormality coefficient of each storage chip during the read-write operation by combining the read-write data of each read-write operation in the read-write test of the storage chip. The data reflects whether the read-write state of the storage chip in one read-write operation is qualified in different test environments. Then, the read-write stability is analyzed by combining the test data of each storage chip in one read-write test, and the read-write times of each storage chip are estimated by combining the data. The safety of the storage chip is analyzed by combining the preset read-write operation times threshold, which can reduce a large number of read-write operation tests and improve the test efficiency of the safety of the storage chip.

[0040] (2) The present application can accurately judge whether the a-th storage chip has read-write abnormality during the i-th read-write operation by comparing the read-write abnormality coefficient y ai of the a-th storage chip during the i-th read-write operation with the preset read-write abnormality coefficient threshold y 01 When the storage chip has read-write abnormality, the system stability will decrease, which will cause the data in the chip to be read or leaked in an unexpected way. Therefore, by comparing in this way, the abnormal read-write operation can be marked, and diversified data support is provided for subsequent judgment of the stability of the read-write operation of the a-th storage chip in one read-write test.

[0041] (3) The present application can judge the read-write stability of each storage chip and further judge whether the storage chip will have read-write abnormality in the use of all the monitoring environments established by the storage chip by comparing the read-write abnormality coefficient fluctuation value y of all the storage chips in one read-write test with the preset fluctuation value threshold y If the situation exists, it means that the storage chip cannot adapt to different monitoring environments, which represents that the adaptability of the storage chip is poor. By setting in this way, it can be judged whether the storage chip can adapt to different temperature monitoring environments, and the safety index of the storage chip can be preliminarily analyzed.

[0042] (4) The present application can compare the estimated read-write times p a of all the storage chips with the preset read-write times threshold p 01By the comparison mode, the read-write life of all the storage chips in the corresponding monitoring environment in one read-write test can be analyzed, the environmental adaptability of the storage chips can be analyzed by combining the analysis result, and the high or low of the safety index of the storage chips can be further analyzed. Since the data is obtained based on diversified data calculation, the reliability is high, and a large amount of read-write test does not need to be performed for a long time, thereby improving the test efficiency of the safety of the storage chips. BRIEF DESCRIPTION OF DRAWINGS

[0043] The application will be further described below with reference to the drawings.

[0044] Figure 1 is a step flow chart of a test algorithm for screening the safety index of a storage chip in the application. DETAILED DESCRIPTION

[0045] The technical solutions in the embodiments of the application will be clearly and completely described below with reference to the drawings in the embodiments of the application. Obviously, the described embodiments are only part of the embodiments of the application, rather than all the embodiments. Based on the embodiments in the application, all other embodiments obtained by those skilled in the art without creative labor fall within the protection scope of the application.

[0046] Please refer to Figure 1 In one embodiment, the application provides a test algorithm for screening the safety index of a storage chip, and the algorithm comprises the following steps:

[0047] S1: First, a plurality of test environments with different temperatures are set according to fixed temperature difference intervals, and each same type of storage chip is placed in each test environment for read-write test.

[0048] S2: Real-time read-write data generated by each storage chip in each read-write operation is collected by a data collection module.

[0049] S3: By combining the collected read-write data, the read-write abnormality coefficient of each storage chip in the corresponding read-write operation is one-to-one mapped, and the read-write abnormality coefficient is calculated.

[0050] S4: By combining the read-write abnormality coefficient of each storage chip in one read-write operation, whether the read-write operation is abnormal is analyzed, and the abnormal read-write operation is marked.

[0051] S5: By combining the test data of all the storage chips in one read-write test, the read-write abnormality coefficient fluctuation value of each storage chip in one read-write test is calculated, and the read-write stability of each storage chip is analyzed according to the data.

[0052] S6: estimating the read-write times of each memory chip by combining the read-write abnormal coefficient fluctuation values of each memory chip in one read-write test, analyzing the safety of the memory chip in combination with the preset read-write operation number threshold, and screening the memory chip according to the analysis result;

[0053] Through the above technical solution, the present example provides a test algorithm for screening the safety indicators of memory chips. The algorithm includes the following steps: first, a plurality of test environments with different temperatures are set at fixed temperature interval intervals, and each memory chip of the same type is placed in each test environment for read-write test. Then, the read-write data of each read-write operation of all memory chips in the read-write test is collected in real time by a data collection module. The read-write data in any read-write operation of each memory chip is one-to-one mapped to the read-write abnormal coefficient of each memory chip in the corresponding read-write operation process, and the read-write abnormal coefficient is calculated. Then, whether the read-write operation is abnormal is analyzed by combining the read-write abnormal coefficient of each memory chip in one read-write operation, and the abnormal read-write operation is marked. The read-write abnormal coefficient fluctuation value of each memory chip in one read-write test is calculated by combining the test data of each memory chip in one read-write test, and the read-write stability of each memory chip is analyzed according to the data. Finally, the read-write times of each memory chip can be estimated by combining the read-write abnormal coefficient fluctuation value of each memory chip in one read-write test, and the safety of the memory chip can be analyzed in combination with the preset read-write operation number threshold. Finally, different types of memory chips can be screened by combining the safety analysis results of different types of memory chips to ensure the quality of the memory chips.

[0054] Through the above technical solution, by combining the read-write data of each read-write operation in the read-write test of the memory chip, the read-write abnormal coefficient of each memory chip in the read-write operation can be calculated. This data reflects whether the read-write state of the memory chip in one read-write operation in different test environments is qualified. Then, the read-write stability is analyzed by combining the test data of each memory chip in one read-write test, and the read-write times of each memory chip are estimated in combination with the data. The safety of the memory chip is analyzed in combination with the preset read-write operation number threshold, which can reduce a large number of read-write operation tests, thereby improving the test efficiency of the safety of the memory chip.

[0055] And by calculating the read-write abnormality coefficient of each storage chip in the read-write operation, the state of the storage chip in each read-write operation in different test environments can be analyzed, so as to realize the environmental adaptability monitoring of the storage chip. And by combining the test data of each storage chip in one read-write test, the read-write abnormality coefficient fluctuation value of each storage chip in one read-write test is calculated, so that the read-write stability of the storage chip in one read-write test in different test environments can be judged, a preliminary judgment of the environmental adaptability of the storage chip can be made, and two sets of data can provide diversified data support when subsequently estimating the read-write times of each storage chip, so as to improve the accuracy of the estimation result.

[0056] The calculation process in S3 includes:

[0057] The read-write abnormality coefficient y ai of the a-th storage chip in the i-th read-write operation is calculated by the formula . ai ;

[0058] Wherein, a is any one of the test storage chips, each storage chip corresponds to one monitoring environment, i is any one of the read-write operations in one read-write test, dq y is the read time of the a-th storage chip in the i-th read-write operation, dq ai is the preset read time, xr y is the write time of the a-th storage chip in the i-th read-write operation, xr y is the preset write time, sj ai is the total duration of one read-write operation, dx y is the read-write error times of the a-th storage chip in the i-th read-write operation, dx b is the preset read-write error times, dx ai is the standard value of dx y , the above standard value can be selected and set according to the allowable error in the empirical data, xp ai is the preset storage space size of the storage chip, xp z is the storage space size of the a-th storage chip after the i-th read-write operation, f z (x) is a defined function, if f z (x)≥1, let f z (x)=x, if f z (x)<x, let f ai (x)=1.

[0059] Through the above technical solution, the read-write abnormality coefficient y ai of the a-th storage chip in the i-th read-write operation is provided, which can be calculated by the formula It is obvious that the longer the reading time and the writing time of the a-th storage chip in the i-th read-write operation, the more the read-write error times of the a-th storage chip in the i-th read-write operation, and the smaller the storage space of the a-th storage chip after the i-th read-write operation, the larger the read-write abnormality coefficient y ai of the a-th storage chip in the i-th read-write operation, and vice versa. The shorter the reading time and the writing time of the a-th storage chip in the i-th read-write operation, the fewer the read-write error times of the a-th storage chip in the i-th read-write operation, and the larger the storage space of the a-th storage chip after the i-th read-write operation, the smaller the read-write abnormality coefficient y ai of the a-th storage chip in the i-th read-write operation, which means that the read-write performance of the a-th storage chip in the corresponding test environment is normal, that is, the environmental adaptability of the storage chip in a short time is good.

[0060] Through this calculation method, accurate data can be provided for subsequent judgment of whether each storage chip has abnormality in the read-write operation, and based on the high-quality data obtained by diversified data fusion, the reliability of the data can be improved, thereby improving the accuracy of the judgment result.

[0061] The comparison process in S4 includes:

[0062] The read-write abnormality coefficient y ai of the a-th storage chip in the i-th read-write operation is compared with a preset read-write abnormality coefficient threshold y 01 .

[0063] If y ai ≥ y 01 , it is judged that the a-th storage chip has read-write abnormality in the read-write operation, and the read-write operation is marked.

[0064] If y ai < y 01 , it is judged that the a-th storage chip does not have read-write abnormality in the read-write operation, and the read-write operation does not need to be marked.

[0065] Through the above technical solution, the read-write abnormality coefficient y ai of the a-th storage chip in the i-th read-write operation is compared with a preset read-write abnormality coefficient threshold y 01 .By comparing the data, we can accurately determine whether the a-th memory chip has any read / write anomalies during the read / write operation. When a memory chip has read / write anomalies, it will lead to a decrease in system stability, which may cause the data in the chip to be read or leaked in an unexpected way. Therefore, this comparison method can mark the read / write operations with anomalies and provide diversified data support for subsequent judgments on the stability of the a-th memory chip in a read / write test.

[0066] The analysis process in S5 includes:

[0067] Through formula Calculate the fluctuation value of the read / write anomaly coefficient of the a-th memory chip in a single read / write test.

[0068] Where n represents the total number of read / write tasks in a single read / write test. For all y ai The average value, For all y ai The maximum value in, For all y ai The minimum value in, sl a Let sl represent the number of read / write operation exceptions for the a-th memory chip in a single read / write test. y The preset number of read / write operation exceptions, g is a proportional coefficient, which is set based on empirical fitting.

[0069] Using the above technical solution, this example provides the read / write anomaly coefficient fluctuation value of the a-th memory chip in a single read / write test. Through formula The calculations show that, through the above technical solution, the data reflects the read and write stability of the memory chip in a single read and write test under different test environments. By judging the read and write stability of the memory chip in a single read and write test under different test environments, the environmental adaptability of the memory chip can be further judged. Furthermore, it can serve as diversified and high-quality fused data, providing additional data support for the subsequent estimation of the number of read and write operations for the a-th memory chip, thereby ensuring the accuracy of the estimation results.

[0070] The analysis process in S5 also includes:

[0071] By testing the read / write anomaly coefficient fluctuation values ​​of all memory chips in a single read / write test... Each is compared with the preset fluctuation threshold. Perform a comparison;

[0072] If any Greater than or equal to It is judged that the read-write stability of the storage chip is poor, that is, when the storage chip is used based on the monitoring environment of the storage chip, the read-write of the storage chip is prone to abnormality, which indicates that the storage chip cannot adapt to different monitoring environments, and it is judged that the safety of the storage chip is poor.

[0073] If all are less than It is judged that the read-write stability of all storage chips is good, that is, when the storage chips are used in all monitoring environments established by the storage chips, the read-write of the storage chips is not prone to abnormality, which indicates that the storage chips can adapt to different monitoring environments, and it is judged that the safety of the storage chips is high.

[0074] Through the above technical solution, the present example compares the read-write abnormality coefficient fluctuation value of all storage chips in one read-write test with the preset fluctuation value threshold respectively, can judge the read-write stability of each storage chip, and further judge whether the read-write abnormality of the storage chip will occur when the storage chip is used in all monitoring environments established by the storage chip, if the situation exists, it indicates that the storage chip cannot adapt to different monitoring environments, that is, the adaptability of the storage chip is poor, through such setting, whether the storage chip can adapt to different temperature monitoring environments can be judged, and the safety index of the storage chip can be preliminarily analyzed.

[0075] The analysis process in S6 includes:

[0076] By combining the test data of the a-th storage chip in one read-write test, the read-write abnormality coefficient change curve w a (t)

[0077] The estimated read-write times p a of the a-th storage chip are calculated by the formula .

[0078] Where t1 is the first read-write operation in one read-write test, t2 is the last read-write operation in one read-write test, f k is an adjustment coefficient lookup table function, and the influence degree of the value range of the empirical data on the read-write times of the storage chip is obtained based on the test data;

[0079] Through the above technical solution, the present example provides the estimated read-write times p a of the a-th storage chip, which can be calculated by the formula ​The calculation is obtained by the calculation manner, and the read-write abnormal coefficient fluctuation value of the a-th storage chip in one read-write test is combined with the change amount of the read-write abnormal coefficient of the a-th storage chip in one read-write test The read-write times of the a-th storage chip can be estimated by combining diversified data, thereby improving the accuracy of the calculation result, and then the estimated read-write times p a The read-write life of each storage chip can be judged by comparing the preset read-write times threshold, thereby judging the environmental adaptability of the storage chip.

[0080] The analysis process in S6 also includes:

[0081] The estimated read-write times p a of all storage chips are compared with the preset read-write times threshold p 01 respectively.

[0082] If any p a is less than or equal to p 01 , it is judged that the read-write life of the storage chip in its corresponding monitoring environment is lower than the threshold, which means that the environmental adaptability of the storage chip is poor, and it is judged that the safety index of the storage chip is poor.

[0083] If all p a are greater than p 01 , it is judged that the read-write life of all storage chips in their corresponding monitoring environment is higher than the threshold, which means that the environmental adaptability of the storage chip is strong, and it is judged that the safety index of the storage chip is high.

[0084] Through the above technical solution, the estimated read-write times p a of all storage chips are compared with the preset read-write times threshold p 01 respectively, and through this comparison manner, the read-write life of all storage chips in their corresponding monitoring environment in one read-write test can be analyzed, and by combining the above analysis result, the environmental adaptability of the storage chip can be analyzed, and the safety index of the storage chip can be further analyzed. Since the data is calculated based on diversified data, it not only has high reliability, but also does not need to spend a lot of time to do a lot of read-write tests, thereby improving the test efficiency of the storage chip safety.

[0085] The maximum temperature value of all monitoring environments in S1 does not exceed 85℃, and the minimum temperature value does not drop below -45℃.

[0086] Through the technical solution, the maximum temperature and the minimum problem of the environment are monitored, through the setting, the environmental adaptability of the storage chip in the daily use condition can be analyzed, and the environmental adaptability of the storage chip in the use environment of the extreme high temperature or the extreme low temperature can be analyzed, so that the sensitivity of the safety test of the storage chip is improved, and the product control of the storage chip is improved.

[0087] The above describes one embodiment of the present application in detail, but the content is only the preferred embodiment of the present application, and cannot be considered as limiting the implementation range of the present application. Any equivalent changes and improvements made within the scope of the present application should still belong to the patent coverage range of the present application.

Claims

1. A test algorithm for screening a memory chip security indicator, characterized by, The algorithm comprises the following steps: S1: First, set a plurality of monitoring environments with different temperatures at fixed temperature difference intervals, and place each same type of storage chip in each monitoring environment for read-write test; S2: Collect real-time read-write data generated by each storage chip in each read-write operation through a data acquisition module; S3: Map the collected read-write data one by one to the read-write abnormality coefficient of each storage chip in the corresponding read-write operation process, and calculate the read-write abnormality coefficient; S4: Analyze whether there is an abnormality in the read-write operation by combining the read-write abnormality coefficient of each storage chip in the read-write operation, and mark the abnormal read-write operation; S5: Calculate the read-write abnormality coefficient fluctuation value of each storage chip in one read-write test by combining the test data of all storage chips in one read-write test, and analyze the read-write stability of each storage chip according to the data; S6: Estimate the read-write times of each storage chip by combining the read-write abnormality coefficient fluctuation value of each storage chip in one read-write test, analyze the safety of the storage chip by combining the preset read-write operation times threshold, and select the storage chip according to the analysis result.

2. The test algorithm for screening the security indicators of memory chips according to claim 1, wherein, The calculation process in S3 comprises: The read-write abnormality coefficient of the a-th memory chip during the i-th read-write operation is calculated by the formula ;​ Wherein, a is any one test memory chip, and each memory chip corresponds to a monitoring environment, i is any one read-write job in one read-write test, is the reading time of the a th memory chip in the i th read-write job, is the preset reading time, is the writing time of the a th memory chip in the i th read-write job, is the preset writing time, is the preset total duration of one read-write job, is the read-write error number of the a th memory chip in the i th read-write job, is the preset read-write error number, is the standard value of , is the preset memory space size of the memory chip, is the memory space size of the a th memory chip after the i th read-write job, is the definition function, if , if , .

3. The test algorithm for screening the security indicators of memory chips according to claim 2, wherein, The comparison process in S4 comprises: by comparing the read / write abnormality coefficient of the a-th memory chip during the i-th read / write operation with a preset read / write abnormality coefficient threshold and the preset read / write abnormality coefficient threshold are compared; If , it is judged that the a-th memory chip has read / write abnormality in the read / write operation, and the read / write operation is marked. If , it is judged that the a-th memory chip does not have read / write exception in the read / write operation, and the read / write operation does not need to be marked.

4. The test algorithm for screening the security indicators of memory chips according to claim 3, wherein, The analysis process in S5 comprises: The read-write abnormal coefficient fluctuation value of the a-th memory chip in one read-write test is calculated by the formula ;​ wherein n is the total number of read / write operations in the read / write test, is the average value of all , is the maximum value of all , is the minimum value of all , is the number of read / write operation exceptions of the a-th memory chip in the read / write test, is the preset number of read / write operation exceptions, is a proportional coefficient, which is set according to empirical fitting.

5. The test algorithm for screening the security indicators of memory chips according to claim 4, wherein, The analysis process in S5 further comprises: By comparing the read-write abnormal coefficient fluctuation values of all the memory chips in a read-write test respectively with preset fluctuation value thresholds respectively if any greater than or equal to , it is determined that the read-write stability of the storage chip is poor, that is, when the storage chip is used based on the monitoring environment of the storage chip, the read-write of the storage chip is prone to abnormality, which indicates that the storage chip of this type cannot adapt to different monitoring environments, and it is determined that the safety of the storage chip of this type is poor; If all are less than , it is determined that the read-write stability of all storage chips is good, that is, the read-write of the storage chips is not prone to abnormality when used in all monitoring environments established for the storage chips, which indicates that the storage chips can adapt to different monitoring environments, and it is determined that the storage chips have high safety.

6. The test algorithm for screening the security indicators of memory chips according to claim 5, wherein, The analysis process in S6 comprises: The read-write abnormal coefficient change curve of the a-th memory chip is established by combining the test data of the a-th memory chip in the one-time read-write test The estimated read / write times of the a-th memory chip are calculated by the formula ;​ wherein, is the first read / write operation in a read / write test, is the last read / write operation in a read / write test, is an adjustment factor lookup function based on the empirical data in The impact of the range of values on the number of read / write operations of the memory chip is obtained based on test data.

7. The test algorithm for screening the security indicators of memory chips according to claim 6, wherein, The analysis process in S6 further comprises: By comparing all the estimated read / write times of the storage chips with the preset read / write time thresholds respectively if any less than or equal to , judging that the read-write life of the storage chip in its corresponding monitoring environment is lower than a threshold value, which means that the environmental adaptability of the storage chip is poor, and judging that the safety index of the storage chip is poor; If all are greater than , it is determined that the read-write life of all the storage chips in their corresponding monitoring environments is higher than the threshold value, which means that the environmental adaptability of the storage chips is strong, and it is determined that the safety index of the storage chips is high.

8. The test algorithm for screening the security indicators of memory chips according to claim 1, wherein, The maximum temperature value of all monitoring environments in S1 is not more than 85℃, and the minimum temperature value is not less than -45℃.

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