The application provides a test scheme for checking
data retention performance of NOR type
Flash memory, focuses on the influence of erase-write cycles on the
data retention performance, unifies the erase-write cycle number of the
Flash memory test, stipulates clear temperature selection criteria, provides a reference for the
Flash memory related test, and comprises the following steps: step one: determining the basic
test algorithm of the NOR type Flash memory as the
Checkerboard algorithm from the
algorithm design complexity and the
fault coverage; step two: improving the
Checkerboard algorithm process and determining the
data retention fault determination step; step three: carrying out a pre-experiment to determine the data retention performance test temperature, erase-write number and
sample number of the NOR type Flash memory; step four: determining the erase-write number of the data retention test at normal temperature and the
sample number under each erase-write number; step five: determining the test pattern, failure criterion,
test duration and test cycle; step six: carrying out the data retention test combined with the erase-write cycle based on the non-replacement timing truncation test; and step seven:
test data processing, fitting the average failure time under different erase-write numbers with the erase-write number to obtain the corresponding relationship between the average failure time and the erase-write number.