74 results about "Memory testing" patented technology

A memory built-in self-test (BIST) controller, corresponding to a partition BIST controller, is configured to control memory testing in one or more corresponding static random access memories (RAMs) and has a first corresponding register configured to store a failure indicator for each of the one or more corresponding RAMs and a second corresponding register configured to store an uncorrectable failure indicator for each of the one or more corresponding RAMs. The partition BIST controller is configured to generate, based on the first and second registers of the MBIST controller, a first in-field test status indicator which indicates whether a failure occurred during memory testing of any RAM corresponding to the partition BIST controller and a second in-field test status indicator which indicates whether an uncorrectable failure occurred during the memory testing of any RAM corresponding to the partition BIST controller.

The invention relates to the technical field of memory test, and provides a test system for a parallel interface NOR FLASH memory, which comprises the following steps of: acquiring verification information of test data of a test data block in a storage area and verification operation in a test process of the NOR FLASH memory, and judging whether the test data block has an error or not; dividing the test data blocks with errors, and determining secondary to-be-analyzed test data blocks; the method comprises the following steps: marking target test data, identifying high-frequency error test data, dividing a secondary to-be-analyzed test data block needing to be adjusted into a tertiary to-be-analyzed test data block, and repeatedly judging and dividing until the data block cannot be continuously divided or the judgment result of the data block is that the data block is not divided, thereby realizing the setting of a block verification mode of a full-step method. And evaluating the durability of the NOR FLASH memory of the parallel interface by using a one-step method. According to the invention, a block verification mode can be adaptively set, and the accuracy of a durability test result is improved.

An integrated circuit includes a memory having an array and a memory built-in self test (MBIST) controller. The MBIST controller is configured to perform memory testing rungs on the memory and includes a first counter and a repair control circuit. The first counter is configured to count uncorrectable errors during each memory testing run. The repair control circuit is configured to, in response to an error found during a memory testing run, determine whether at least one of row repair or column repair can be applied to repair the error.

This invention provides a memory testing system, comprising: a host computer; at least one card reader communicatively connected to the host computer, each card reader having a corresponding memory under test (MDT) communicatively connected to it; and a temperature chamber, in which the MDT and the card readers are placed. The host computer controls each MDT to perform a corresponding test and simultaneously controls the temperature chamber to adjust its internal temperature, enabling parallel testing of all MDTs under different ambient temperatures. This memory testing system solves the current technical problem of achieving low-cost and high-efficiency testing for memory.

The invention provides a high-efficiency memory repair system and method based on a pooling memory. The method comprises the following steps: a memory test module performs UCE error address detection on a memory bank by taking cache as granularity; the management module is used for converting the memory error address into a memory page address to which the memory error address belongs, and issuing a repair command for the memory page address; the address routing module replaces and adds a memory page address into a routing table by utilizing a routing table look-up algorithm according to the repair command so as to finish address repair, performs corresponding address conversion according to a repair state of an accessed host memory address, and routes the address to a port where the memory bank or the out-of-band storage module is located; and the out-of-band storage module is an out-of-band memory pool independent of the system memory pool and is used for repairing the damaged memory by taking the memory page as the granularity. According to the method, the effects of improving the utilization efficiency and compatibility of the memory and enhancing the RAS system of the memory are achieved through the high-efficiency memory repair system which is provided with the out-of-band memory module and takes the memory page capable of being dynamically configured as the granularity.

The invention provides a memory testing method and device, electronic equipment and a computer readable storage medium, and belongs to the technical field of memory testing. The method comprises the following steps: acquiring the number of application cores, and labeling each application core; obtaining a memory test range of a memory to be tested, distributing a plurality of blocks to be tested for each application core according to the memory test range and the number of the application cores, and numbering the distributed blocks to be tested of each application core; according to the mark number of each application core and the serial number of each to-be-tested block, determining a target test algorithm of each to-be-tested block allocated to each application core from at least two preset test algorithms; and executing a corresponding target test algorithm on each distributed to-be-tested block in parallel through each application core, and obtaining a test result of each to-be-tested block. Therefore, each application core runs different types of preset test algorithms in parallel in the allocated to-be-tested block, so that the diversity test of the memory at the same time is realized, the memory test flexibility and accuracy are improved, and the test time is saved.

This invention discloses a delay device and delay control method suitable for multi-memory testing systems, relating to the field of memory testing technology. It includes a first delay register and a second delay register. The first delay register is connected to a data driver on an electronic pin in the multi-memory testing system and is used to adjust the output timing of several data signals in a test vector according to a first delay logic, to compensate for path difference delays between the command / address bus and data bus of several memories under test. The second delay register is connected to a data receiver on an electronic pin in the multi-memory testing system and is used to adjust the timing of the data receiver receiving several expected data signals according to a second delay logic, to compensate for the internal delays of several memories under test. This invention can achieve delay compensation for all signals in the test vector, ensuring effective testing of multiple memories and improving test accuracy.

The invention provides a memory testing method and device. The method comprises the following steps of: after a plurality of crystal grains are idle for a first time, performing a first-stage test on the crystal grains, and setting a plurality of flags corresponding to the crystal grains which do not pass the first-stage test as first logic levels; after the crystal grains are idle for a second time, carrying out a second-stage test on the crystal grains, and taking the crystal grains which pass through the second-stage test and of which the corresponding flags are set to be the first logic level as a plurality of suspected good crystal grains to be idle continuously; and after the suspected good crystal grains are left unused for a third time, third-stage testing is carried out on the suspected good crystal grains.

The application provides a memory performance test method and device, a microprocessor architecture and a storage medium, and is applied to the technical field of computers. After obtaining a memory mapping request of a user state program, the method obtains target page table attributes associated with a target file descriptor carried by the memory mapping request and allocates target physical memory. Then, the method configures page table entries of a memory page table according to the target page table attributes, establishes address mapping between the target physical memory and a virtual address space in the memory page table, and finally feeds back address information of the virtual address space to the user state program, so that the user state program performs memory testing based on the obtained address information. The file descriptor is associated with target page table attributes preconfigured by the user state program. By initiating a memory mapping request carrying different file descriptors, virtual address spaces mapped according to different page table attributes can be obtained, the test process is greatly simplified, the flexibility of the test process is improved, and the test efficiency is improved.

A method and an apparatus for memory testing are provided. The method includes following steps: after multiple dies are idle for a first time, performing a first stage test on the dies, and setting multiple flags corresponding to the dies that fail the first stage test to a first logic level; after the dies are idle for a second time, performing a second stage test on the dies, and regarding the dies that pass the second stage test and have the corresponding flags set to the first logic level as suspected good dies and keeping the suspected good dies idle; and after the suspected good dies are idle for a third time, performing a third stage test on the suspected good dies.

The invention provides a data acquisition system and a data acquisition method for self-adaptive memory testing, and belongs to the technical field of memory testing. The system comprises a test decision engine built in or connected with a memory test model and an uncertainty evaluation module, the model outputs a memory test strategy and analyzes a test result, and the evaluation module quantifies the confidence of the memory test strategy and identifies a test information demand gap; the dynamic acquisition controller is used for receiving the acquisition request sent by the test decision engine and analyzing the acquisition request into a hardware control instruction; the multi-mode sensor array is used for executing data acquisition of the memory according to the instruction; the edge feature extraction and compression module is used for processing the collected original data in real time and generating a test feature vector; and the data fusion and association database is used for receiving and storing the test feature vectors and uniformly marking timestamps and event tags for the test decision engine to call. According to the method, accurate tracing from logic errors to physical roots is realized, and the memory testing efficiency is improved.

The application discloses a memory test system, and relates to the technical field of computers, which comprises a control device, a first type of network device, second type of network devices, a hardware debugging device and a device to be tested connected with each second type of network device respectively, the control device is connected with each second type of network device through the first type of network device, each second type of network device, the hardware debugging device and the device to be tested corresponding to the second type of network device are in the same local area network, different second type of network devices are in different local area networks, the control device is used for issuing a test task, and a target hardware debugging device is used for adjusting memory test parameters so that a target device to be tested generates a memory test result. Through the application, memory test is simultaneously performed on multiple devices to be tested through the same control device, test efficiency is improved, and the multiple devices to be tested are in different local area networks, so that the test environments of the devices to be tested are independent.

This invention relates to the field of power board heat dissipation technology, specifically disclosing a heat dissipation structure for a high-power power board used in memory testing. The structure includes a water-cooled plate installed between a lower and upper circuit board. A housing is installed outside the lower and upper circuit boards, and a circulating water tank is installed outside the housing. The circulating water tank is connected to the water-cooled plate. Two sets of flow channels are formed within the water-cooled plate, corresponding to the lower and upper circuit boards respectively. Several heat dissipation slots are formed at the top and bottom of the water-cooled plate. An exhaust fan is rotatably installed within each heat dissipation slot. Heat dissipation fins are provided within the heat dissipation slots, close to the flow channels. Several air vents are formed on the water-cooled plate, communicating with the heat dissipation slots. During heat dissipation, the exhaust fan draws heat generated on the upper and lower circuit boards into the heat dissipation slots through airflow. The high-temperature airflow contacts the heat dissipation fins, thereby achieving heat dissipation.

This application discloses a memory testing method and electronic device, relating to the field of memory testing technology. The method includes: dynamically configuring the testing environment based on the serial presence detection parameters of the memory under test, ensuring precise matching of testing criteria with memory specifications, significantly improving the accuracy and relevance of the test; simultaneously, by comparing power supply parameters and serial presence detection parameters in real time, dynamic adjustment of the protection threshold is achieved, which avoids accidental interruptions, ensures test continuity, and can respond promptly to real anomalies, effectively improving testing efficiency and reducing the risk of memory damage.

The invention belongs to the technical field of memory testing, and particularly relates to an address range controllable RAM (Random Access Memory) testing system and a testing method. Comprising a main control unit which serves as a system control core, is controlled by a CPU kernel, performs read-write control on the main control unit through a system bus, and is used for sending a test signal to a BIST generation circuit and receiving a test result fed back by the BIST generation circuit; a plurality of BIST generation circuits which support a plurality of RAMs to start testing at the same time and operate testing independently; wherein each RAM corresponds to one independent BIST circuit; the system supports a user to customize a test starting address and a test ending address to realize accurate test of random intervals of the RAM, solves the problems that the traditional RAM test needs full-address traversal and the test time is long, shortens the test time while guaranteeing the test coverage rate of a key address field, and improves the test efficiency. The method is suitable for RAM local address field function verification, aging test and targeted recheck scenes after fault repair.

The invention discloses a memory testing method and electronic equipment, and relates to the technical field of memory testing, and the memory testing method comprises the steps that a testing environment is dynamically configured according to serial existence detection parameters of a to-be-tested memory, so that a testing criterion is accurately matched with a memory specification, and the testing accuracy and pertinence are remarkably improved; meanwhile, dynamic adjustment of the protection threshold is achieved by comparing the power supply parameters with the serial existence detection parameters in real time, mistaken interruption is avoided, the test continuity is guaranteed, response can be made in time when real abnormity occurs, the test efficiency is effectively improved, and the memory damage risk is reduced.

An embedded memory system includes an embedded memory circuit and a host circuit. The embedded memory circuit is used to store a lookup table. The host circuit is used to test the embedded memory circuit using a test clock signal having a plurality of phases and a plurality of instructions of a program of the embedded memory circuit, and record a correspondence between each of the instructions and the phases to generate the lookup table.

A memory test is proposed wherein a majority of the address lines are switched on every cycle. Increasing a number of switched address lines increases an ability to detect cross coupling problems between address lines and maximizes power usage to detect power issues. In one example, on every even cycle, the address lines use a first incrementing or decrementing pattern, while every odd cycle, the address lines use a second incrementing or decrementing pattern. The first pattern can be an opposite direction of counting than the second pattern, such that if one is incrementing, the other is decrementing or vice versa. The first and / or second pattern can be binary, Gray code, or other patterns.

A memory testing device uses a master control unit to concurrently operate multiple, intelligent, slave control units (SCUs). SCUs have one or more processing unit(s) (i.e. Finite State Machines, micro controllers, processors) capable of processing one or more firmware with or without operating system (i.e. bare-metal, embedded OS, RTOS (real time operating system)) to perform a series of task defined by firmware(s) for testing volatile and / or non-volatile memory devices connected into one or more DUT devices plus SCU has capability of having operating system and install and run host applications locally within each SCU units to mimic host applications environments along with performing regular memory testing.

This invention discloses an aging test method for dynamic random access memory (DRAM), relating to the field of memory testing technology. The method includes: S1: Model Establishment: Aging tests are performed on a reference chip sample, and the test results are monitored and acquired. Simultaneously, based on the test results and a statistical analysis model, a correlation model between real-time monitoring parameters and the long-term lifespan of the chip is constructed; S2: Closed-Loop Testing: Based on the correlation model, a damage control threshold is determined. Simultaneously, based on the damage control threshold, selected electrical parameters for the aging test of the DRAM chip under test are monitored, and the test parameters are adjusted; S3: Test Judgment: Functional tests are performed on each DRAM chip under test to determine the chip test results. This method avoids the problem of hidden damage to virgin chips caused by excessive stress in traditional aging tests, ensuring the long-term lifespan and stability of the chips in actual use.

The embodiment of the invention provides a memory testing method and electronic equipment. The memory test method comprises the steps of storing a target signature file and a memory test script in a target test partition when to-be-tested equipment is in a factory test mode; writing or deleting a start test flag bit in the random access memory based on the trigger state of the preset combination key; in the power-on self-test process of the basic input and output system, detecting whether the start test flag bit exists in the random access memory or not; if the test starting flag bit exists in the random access memory, the device to be tested is controlled to start the target test partition to execute memory test operation, so that automatic test of the memory is achieved, and the memory test efficiency is remarkably improved.

A method of testing using a memory testing device connected to a memory device is disclosed, including receiving a test command. When the test command is a finite state machine (FSM) operation command, the memory device is tested according to the FSM operation command, and an operation is performed depending on a pass / fail result to output a result. However, when the test command is a direct access command, an automatic operation test of input data is performed in a test area according to received address information, and a test result is output, which can include output data with failure information or an automatic operation.

The present disclosure provides a DRAM data retention time prediction method, device, equipment and medium, relating to the technical field of memory testing. The method comprises collecting to-be-fitted data under the DRAM data retention time in a first preset time range; fitting the to-be-fitted data through a preset lognormal distribution function to obtain key parameters, and in the case that the key parameters meet a preset fitting condition, obtaining a target lognormal distribution function; and determining the data retention time of the DRAM according to the target lognormal distribution function. The DRAM data retention time prediction method, device, equipment and medium provided by the present disclosure can avoid the influence of intrinsic failure, accurately predict the DRAM data retention time test, and quickly locate the cause of yield loss.

An integrated circuit (IC) includes a memory array with M rows of N storage elements that has an N-bit wide parallel input and output, and a 1-bit wide array scan input and output. A memory built-in self-test (MBIST) circuit is connected to the memory array to generate test addresses and N-bit wide test data. Functional circuitry with a functional address bus and N-bit wide functional data path is linked to the memory array. Control circuitry enables a serial test mode for shifting data through the storage elements, a MBIST mode for test data access, and a normal operation mode for functional data access. This IC design offers versatile memory testing and operational capabilities.

A method and an apparatus for memory testing are provided. The method includes following steps: after multiple dies are idle for a first time, performing a first stage test on the dies, and setting multiple flags corresponding to the dies that fail the first stage test to a first logic level; after the dies are idle for a second time, performing a second stage test on the dies, and regarding the dies that pass the second stage test and have the corresponding flags set to the first logic level as suspected good dies and keeping the suspected good dies idle; and after the suspected good dies are idle for a third time, performing a third stage test on the suspected good dies.

The application relates to an artificial intelligence-based memory test method, which comprises the following steps: according to the type, module, working environment information and historical fault information of a memory to be tested, a target algorithm primitive is selected from an algorithm primitive library through a preset artificial intelligence model, wherein the algorithm primitive library comprises a plurality of algorithm primitives, and the algorithm primitive is used for indicating the data mode, address sequence, timing parameter and verification mode of an algorithm used during testing; and the memory is tested according to the target algorithm primitive. The embodiments of the application can not only reduce redundant testing and testing time consumption, improve memory test efficiency, but also facilitate the discovery of new faults and improve memory test quality.

The invention relates to a memory testing method based on artificial intelligence, and the method comprises the steps: selecting a target algorithm primitive from an algorithm primitive library through a preset artificial intelligence model according to the type, module, working environment information and historical fault information of a to-be-tested memory, the algorithm primitive is used for indicating a data mode, an address sequence, a time sequence parameter and a verification mode of an algorithm used during testing; and testing the memory according to the target algorithm primitive. According to the embodiment of the invention, redundancy testing and testing time consumption can be reduced, the memory testing efficiency is improved, new faults can be found conveniently, and the memory testing quality is improved.

The invention discloses a memory testing method and device of a memory chip based on edge computing and a medium, and relates to the technical field of information processing.The method comprises the steps that an edge node reads self-description information and loads a template, a sampling grid and a reference track are established, and observed quantity is collected according to the sampling grid to generate an in-stream abstract sequence; aligning the in-stream abstract sequence with the reference trajectory, marking a continuous sampling position, higher than the reference trajectory, of the in-stream abstract sequence to obtain a continuous super-boundary interval, and forming an evidence fragment index; consistency judgment is carried out based on the in-stream abstract sequence and the reference trajectory, when repeatable differences occur, an original collection waveform and an error bitmap are cut according to an evidence fragment index, an evidence packet is generated and sent to a cloud side, and minimum guidance is obtained; and the edge node solidifies the execution entry, generates evidence verification and performs verifiable cleaning, and adds an archiving record to close up the edge side. Through the evidence fragment index, the structured positioning of the abnormal section is realized, and the positioning efficiency and the rechecking accuracy are improved.

The invention relates to the technical field of voltage correction, and discloses a voltage correction method and system for memory test equipment, and the method comprises the steps: initializing a system, and building a basic operation environment; responding to a calibration request of the multi-condition triggering mechanism, and starting a calibration task according to a preset priority; an actual voltage value is collected, and a basic compensation amount is calculated through an adaptive PID control algorithm; performing secondary compensation in combination with the real-time temperature data and a temperature-voltage drift model to generate a final compensation amount; and the compensation coefficient is converted into a DAC control word adjustment output voltage, and the compensation coefficient is stored according to a preset format. Through full-process automatic design, precise voltage compensation and multi-scene adaptation are achieved, the calibration efficiency is greatly improved compared with a traditional method, the voltage precision meets the strict requirements of a high-speed memory, online calibration and remote operation are supported, test continuity is guaranteed, and the method is adaptive to complex test scenes.

The invention discloses a DRAM (Dynamic Random Access Memory) testing method and device and a storage medium, relates to the technical field of memory testing, and discloses a DRAM testing method which comprises the following steps: determining a target Bank in each Bank of a DRAM, and obtaining a DRAM address; generating a system address corresponding to the target Bank based on a column address and a row address in the DRAM address, and storing the system address in a DRAM address table; on the basis of a system address in the DRAM address table, executing a write-read operation on the target Bank; and when the write-read operation of the target Bank is executed, returning to execute the step of sequentially determining the target Bank in each Bank of the DRAM. According to the method, the system address of the target Bank needing to be tested is generated, and the write-read operation is performed on each system address of the target Bank according to the DRAM address table of the system addresses, so that continuous write-read testing is performed on the same Bank, the test time consumption of the same Bank in the DRAM is reduced, the test pressure of the same Bank of the DRAM is increased with higher write-read efficiency, and the test efficiency of the DRAM is improved. And thus, the test efficiency of performing the SLT test on the DRAM is improved.