Power module, power supply device, equipment and vehicle

Abstract

The invention discloses a power module, a power supply device, equipment and a vehicle. The power module comprises a substrate; the alternating-current conversion unit and the direct-current conversion unit are both arranged on the substrate, the alternating-current conversion unit is used for performing power conversion on the alternating-current electric signals, and the direct-current conversion unit is used for performing power conversion on the direct-current electric signals. The internal structure of the power module is high in integration level, the size and the weight of the whole system are reduced, and the material utilization rate and the power density are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of vehicles, and in particular, to a power module, a power supply device, a device, and a vehicle. Background Art

[0002] In the related art, the DCDC module is not integrated in the design of the power module, so that an independent DC / DC module requires additional space for installation, resulting in a more compact layout of the overall system. Summary of the Invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art. For this reason, an object of the present invention is to provide a power module, the internal structure of which has a high integration degree, reducing the volume and weight of the overall system, improving the material utilization rate and power density.

[0004] A second object of the present invention is to provide a power supply device.

[0005] A third object of the present invention is to provide a device.

[0006] A fourth object of the present invention is to provide a vehicle.

[0007] To solve the above problems, an embodiment of the first aspect of the present invention provides a power module, including a substrate; an AC conversion unit and a DC conversion unit, both the AC conversion unit and the DC conversion unit are arranged on the substrate, the AC conversion unit is used for power conversion of an AC signal, and the DC conversion unit is used for power conversion of a DC signal.

[0008] According to the power module of the embodiment of the present invention, the AC conversion unit and the DC conversion unit are integrated, improving the integration degree of the power module, effectively utilizing the internal space of the power module, reducing the space occupied by the DC conversion unit in practical applications, reducing the volume and weight of the overall system, and improving the material utilization rate and power density.

[0009] In some embodiments, the substrate includes a first side and a second side, the first side extends in a first direction, the second side extends in a second direction, and the first direction is perpendicular to the second direction; the AC conversion unit includes a fast power factor correction circuit and a slow power factor correction circuit, wherein the fast power factor correction circuit is arranged close to the first side, the slow power factor correction circuit is arranged close to the second side, and the slow power factor correction circuit is electrically connected to the fast power factor correction circuit.

[0010] In some embodiments, the substrate further includes a third side, which extends along the first direction and is disposed opposite to the first side; the AC conversion unit further includes a resonant primary circuit and a resonant secondary circuit, the resonant primary circuit is disposed close to the second side, the resonant secondary circuit is disposed close to the third side, and the resonant primary circuit is electrically connected to the slow power factor correction circuit and the resonant secondary circuit.

[0011] In some embodiments, the substrate further includes a fourth side, which extends along the second direction and is disposed opposite to the second side; the DC conversion unit includes a primary conversion circuit and a secondary conversion circuit, the primary conversion circuit is disposed close to the third side, the secondary conversion circuit is disposed close to the fourth side, and the primary conversion circuit is electrically connected to the secondary conversion circuit.

[0012] In some embodiments, the substrate includes a first conductive layer, an intermediate layer, and a second conductive layer. A first conductive region is formed on the first conductive layer, and the first conductive region is close to the first side; the fast power factor correction circuit includes a fast recovery power chip, and the fast recovery power chip is disposed in the first conductive region.

[0013] In some embodiments, a second conductive region is further formed on the first conductive layer, and the second conductive region is close to the second side; the slow power factor correction circuit includes a slow recovery power chip, the resonant primary circuit includes a first resonant power chip, and both the slow recovery power chip and the first resonant power chip are disposed in the second conductive region.

[0014] In some embodiments, a third conductive region is further formed on the first conductive layer, and the third conductive region is close to the third side; the resonant secondary circuit includes a second resonant power chip, the primary conversion circuit includes a first conversion power chip, and both the second resonant power chip and the first conversion power chip are disposed in the third conductive region.

[0015] In some embodiments, a fourth conductive region is further formed on the first conductive layer, and the fourth conductive region is close to the fourth side; the secondary conversion circuit includes a second conversion power chip, and the second conversion power chip is disposed in the fourth conductive region.

[0016] In some embodiments, the second conductive region includes a first conductive sub-region and a second conductive sub-region. The first conductive sub-region is adjacent to the first conductive region, and the second conductive sub-region is adjacent to the third conductive region; the slow recovery power chip is disposed in the first conductive sub-region, and the first resonant power chip is disposed in the second conductive sub-region.

[0017] In some embodiments, the third conductive region includes a third conductive sub-region and a fourth conductive sub-region. The third conductive sub-region is adjacent to the second conductive region, and the fourth conductive sub-region is adjacent to the fourth conductive region. The second resonant power chip is disposed in the third conductive sub-region, and the first conversion power chip is disposed in the fourth conductive sub-region.

[0018] In some embodiments, a hollowed-out region is formed in the middle of the substrate. The power module further includes a power terminal, which is located on one side of the substrate away from the hollowed-out region. The power terminal is electrically connected to the first conductive layer and extends out of the substrate in a direction away from the hollowed-out region.

[0019] In some embodiments, the power module further includes a drive terminal, which is located on one side of the substrate close to the hollowed-out region. The drive terminal is electrically connected to the first conductive layer and extends out of the substrate in a direction close to the hollowed-out region.

[0020] In some embodiments, the power module further includes: a package body for packaging the AC conversion unit and the DC conversion unit.

[0021] A power supply device according to a second aspect embodiment of the present invention includes the power module of the above embodiment.

[0022] According to the power supply device of the embodiment of the present invention, by adopting the power module, the overall volume and self-weight can be reduced, and the material utilization rate and power density are improved.

[0023] A device according to a third aspect embodiment of the present invention includes the power supply device of the above embodiment.

[0024] According to the power supply device of the embodiment of the present invention, by adopting the power supply device, the overall volume and self-weight can be reduced, and the material utilization rate and power density are improved.

[0025] A vehicle according to a fourth aspect embodiment of the present invention includes the power module of the above embodiment, or includes the power supply device of the above embodiment.

[0026] According to the vehicle of the embodiment of the present invention, by adopting the power module or the power supply device, the waste of space can be reduced, and the material utilization rate and power density are improved.

[0027] The additional aspects and advantages of the present invention will be partially given in the following description, partially become apparent from the following description, or be understood through the practice of the present invention. Description of the Drawings

[0028] The above and / or additional aspects and advantages of the present invention will become apparent and be readily understood from the following description of embodiments in conjunction with the accompanying drawings, in which: Figure 1 is a structural block diagram of a power module according to an embodiment of the present invention; Figure 2 is a schematic diagram of the internal distribution of a power module according to an embodiment of the present invention; Figure 3 is a schematic diagram of the internal distribution of a power module according to another embodiment of the present invention; Figure 4 is an exploded view of a power module according to an embodiment of the present invention; Figure 5 is a structural block diagram of a device according to an embodiment of the present invention; Figure 6 is a structural block diagram of a vehicle according to an embodiment of the present invention.

[0029] Reference numerals: Vehicle 1000; Power module 100; Power supply device 200; Device 300; Substrate 10, AC conversion unit 20; DC conversion unit 30; Power terminal 40; Drive terminal 50; Epoxy resin 60; Fast recovery power chip 11; Slow recovery power chip 21; First resonant power chip 31; Second resonant power chip 41; First conversion power chip 51; Second conversion power chip 61; Fast power factor correction circuit 1; Slow power factor correction circuit 2; Resonant primary circuit 3; Resonant secondary circuit 4; Primary conversion circuit 5; Secondary conversion circuit 6. Detailed description of the specific embodiment

[0030] Embodiments of the present invention will be described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. Embodiments of the present invention will be described in detail below.

[0031] In the related art, there are power modules integrated with multiple circuit units, such as a rectifier circuit unit, a power factor correction circuit unit, an inverter circuit unit, etc. However, there are still some deficiencies. The integrated power module is not integrated with the DC / DC module, so the independent DC / DC module requires additional space for installation, making the layout of the overall system more compact.

[0032] To solve the above problems, an embodiment of the first aspect of the present invention provides a power module. The internal structure of the power module has a high degree of integration, reducing the volume and weight of the overall system, and improving the material utilization rate and power density.

[0033] Below with reference to Figure 1Describe a power module 100 according to an embodiment of the present invention. The power module 100 includes a substrate 10, an AC conversion unit 20, and a DC conversion unit 30.

[0034] Among them, both the AC conversion unit 20 and the DC conversion unit 30 are disposed on the substrate 10. The AC conversion unit 20 is used for power conversion of AC signal, and the DC conversion unit 30 is used for power conversion of DC signal.

[0035] Specifically, when the power module 100 is in use, its operation involves both AC and DC signals simultaneously. Due to the low integration level of power modules in the prior art, the process of converting AC mains into DC or performing voltage conversion on the DC output depends on external circuits. Therefore, the power module 100 needs to be equipped with multiple circuits to work properly, such as a rectifier circuit, a PFC circuit, etc., which limits the application of the power module. At the same time, the external circuits occupy more space. In this application, by setting the AC conversion unit 20 and the DC conversion unit 30 on the substrate 10 of the power module 100, the power module 100 integrates the power conversion functions of AC and DC signals, improving the integration level and power density of the power module 100. Thus, the power module 100 can work properly without configuring multiple external circuits, while reducing the space occupied by the overall system. At the same time, due to the highly integrated design of the power module 100, the wiring and assembly process of the power module 100 is simplified in manufacturing, thereby improving the material utilization efficiency.

[0036] The power module 100 according to an embodiment of the present invention integrates the AC conversion unit 20 and the DC conversion unit 30, improving the integration level of the power module 100, effectively utilizing the internal space of the power module 100, reducing the space occupied by the DC conversion unit 30 in practical applications, reducing the volume and weight of the overall system, and improving the material utilization rate and power density.

[0037] In some embodiments, as Figure 2 shown, the substrate 10 includes a first side L1 and a second side L2. The first side L1 extends along a first direction, and the second side L2 extends along a second direction. The first direction is perpendicular to the second direction; the AC conversion unit 20 includes a fast power factor correction circuit 1 and a slow power factor correction circuit 2.

[0038] Among them, the fast power factor correction circuit 1 is disposed close to the first side L1, the slow power factor correction circuit 2 is disposed close to the second side L2, and the slow power factor correction circuit 2 is electrically connected to the fast power factor correction circuit 1.

[0039] Specifically, the fluctuating AC mains power enters the fast power factor correction circuit 1 and the slow power factor correction circuit 2. The fast power factor correction circuit 1 and the slow power factor correction circuit 2 suppress the harmonic components in the current through high-frequency chopping, and finally output a DC signal after power factor correction.

[0040] In some embodiments, as Figure 2 shown, the substrate 10 further includes a third side L3, and the third side L3 extends along the first direction and is oppositely arranged to the first side L1; the AC conversion unit 10 further includes a resonant primary circuit 3 and a resonant secondary circuit 4. The resonant primary circuit 3 is disposed close to the second side L2, the resonant secondary circuit 4 is disposed close to the third side, and the resonant primary circuit 3 is electrically connected to the slow power factor correction circuit 2 and the resonant secondary circuit 4.

[0041] Specifically, the DC signal after power factor correction is input into the resonant primary circuit 3, the DC signal is inverted into an AC signal, and then input into the resonant secondary circuit 4. Through the rectification function of the resonant secondary circuit 4, the AC signal is rectified into a DC signal. The rectified DC signal can be used to charge the battery pack. Based on the characteristics of high efficiency and low loss, the resonant primary circuit 3 and the resonant secondary circuit 4 can achieve high-efficiency power transmission, and at the same time, the incidence of faults can be reduced through inversion and rectification.

[0042] In some embodiments, as Figure 2 shown, the substrate 10 further includes a fourth side L4, and the fourth side L4 extends along the second direction and is oppositely arranged to the second side L2; the DC conversion unit 30 includes a primary conversion circuit 5 and a secondary conversion circuit 6. The primary conversion circuit 5 is disposed close to the third side L3, the secondary conversion circuit 6 is disposed close to the fourth side L4, and the primary conversion circuit 5 is electrically connected to the secondary conversion circuit 6.

[0043] Specifically, there is no electrical connection between the DC conversion unit / 30 and the AC conversion unit 20. The battery pack inputs the stored electrical energy in the form of a DC signal into the primary conversion circuit 5. First, it is input as an AC signal through the primary conversion circuit 5, and then the voltage is stepped down by a transformer and output as a DC signal through the secondary conversion circuit 6 to a low-voltage electrical appliance. Thus, the power module 100 of the present application integrates the functions of a power factor correction circuit, a resonant circuit, and a DC conversion circuit, improving the material utilization rate and power density.

[0044] In some embodiments, the substrate 10 includes a first conductive layer, an intermediate layer, and a second conductive layer. A first conductive region is formed on the first conductive layer, and the first conductive region is close to the first side; the fast power factor correction circuit 1 includes a fast recovery power chip 11, and the fast recovery power chip 11 is disposed in the first conductive region.

[0045] Specifically, the substrate 10 can adopt a double-sided copper-clad structure. The double-sided copper-clad can adopt a DBC or AMB structure. In order to reduce costs in this application, the first conductive layer and the second conductive layer are metal-clad layers, and the intermediate layer is an alumina ceramic layer, that is, the substrate adopts a DBC structure. Since the first conductive layer and the second conductive layer need to have good heat dissipation performance and high electrical conductivity, the metal-clad layer adopts a copper-clad layer. The ceramic layer can select materials such as aluminum nitride, alumina, and silicon nitride to withstand high voltages and have good insulation at the same time. Considering cost reasons, alumina is selected for the intermediate layer. The substrate adopting the DBC structure can effectively conduct a large amount of heat generated inside the power module 100 during operation to the outside of the power module 100, thereby preventing the chips and bonding wires inside the power module 100 from failing due to heat accumulation. Among them, the connection method between the fast-recovery power chip 11 and the double-sided ceramic copper-clad substrate can be sintering or soldering, and the welding process is selected as nano-silver sintering. Nano-silver sintering has the advantages of high connection strength, good thermal and electrical conductivity, and high temperature resistance. At the same time, the power chips used in this application all adopt nano-silver sintering.

[0046] In some embodiments, as Figure 2 shown, a second conductive region is further formed on the first conductive layer, and the second conductive region is close to the second side L2; the slow power factor correction circuit 2 includes a slow-recovery power chip 21, and the resonant primary circuit 3 includes a first resonant power chip 31. The slow-recovery power chip 21 and the first resonant power chip 31 are both disposed in the second conductive region.

[0047] Specifically, after the AC signal is chopped at a high frequency by the slow-recovery power chip 21, the harmonic components in the current are suppressed, and the output DC signal needs to enter the first resonant power chip 31. The slow-recovery power chip 21 and the first resonant power chip 31 are both disposed in the second conductive region, which can shorten the wiring, thereby reducing the stray inductance inside the power module 100 and improving the working efficiency of the power module 100.

[0048] In some embodiments, as Figure 2 shown, a third conductive region is further formed on the first conductive layer, and the third conductive region is close to the third side L3; the resonant secondary circuit 4 includes a second resonant power chip 41, and the primary conversion circuit 5 includes a first conversion power chip 51. The second resonant power chip 41 and the first conversion power chip 51 are both disposed in the third conductive region.

[0049] Specifically, the second resonant power chip 41 outputs a DC signal to supply power to the battery pack for charging, and when the battery pack supplies power, it needs to pass through the first conversion power chip 51 first. Therefore, the second resonant power chip 41 and the first conversion power chip 51 are both disposed in the third conductive region.

[0050] In some embodiments, as Figure 2As shown, a fourth conductive region is further formed on the first conductive layer, and the fourth conductive region is close to the fourth side L4; the secondary side conversion circuit 6 includes a second conversion power chip 61, and the second conversion power chip 61 is disposed in the fourth conductive region.

[0051] Specifically, the second conversion power chip 61 outputs a stepped-down DC signal to the low-voltage electrical appliance. Therefore, the second conversion power chip 61 is separately disposed in the fourth conductive region, which is convenient for the second conversion power chip 61 to dissipate heat.

[0052] In some embodiments, the second conductive region includes a first sub-conductive region and a second sub-conductive region. The first sub-conductive region is adjacent to the first conductive region, and the second sub-conductive region is adjacent to the third conductive region; the slow-recovery power chip 21 is disposed in the first sub-conductive region, and the first resonant power chip 31 is disposed in the second sub-conductive region.

[0053] Specifically, by dividing the first conductive region, the slow-recovery power chip 21 is disposed in the first sub-conductive region, and the first resonant power chip 31 is disposed in the second sub-conductive region. The first sub-conductive region and the second sub-conductive region are respectively responsible for different circuit functions to reduce the electromagnetic interference between the slow-recovery power chip 21 and the first resonant power chip 31.

[0054] In some embodiments, the third conductive region includes a third sub-conductive region and a fourth sub-conductive region. The third sub-conductive region is adjacent to the second conductive region, and the fourth sub-conductive region is adjacent to the fourth conductive region; the second resonant power chip 41 is disposed in the third sub-conductive region, and the first conversion power chip 51 is disposed in the fourth sub-conductive region.

[0055] Specifically, by dividing the third conductive region, the second resonant power chip 41 is disposed in the third sub-conductive region, and the first conversion power chip 51 is disposed in the fourth sub-conductive region. The third sub-conductive region and the fourth sub-conductive region are respectively responsible for different circuit functions to reduce the electromagnetic interference between the second resonant power chip 41 and the first conversion power chip 51.

[0056] In some embodiments, as Figure 3 shown, a hollowed-out region is formed in the middle of the substrate 10; the power module 100 further includes a power terminal 40. The power terminal 40 is located on one side of the substrate 10 away from the hollowed-out region, and the power terminal 40 is electrically connected to the first conductive layer and extends out of the substrate 10 in a direction away from the hollowed-out region.

[0057] Specifically, as Figure 3 shown, the hollowed-out region in the middle of the substrate 10 can be used to place components such as capacitors, inductors or transformers, as Figure 4As shown, the power terminal 40 is electrically connected to the first conductive layer and extends away from the hollowed-out area out of the substrate 10. The power terminal 40 and the first conductive layer can be connected by welding, and the connection method can be soldering or ultrasonic welding. Exemplarily, the power terminal and the first conductive layer are connected by ultrasonic welding. Since the welding material does not melt in the ultrasonic welding method, the characteristics of the metal are not damaged, and the electrical conductivity after welding is good, the resistance coefficient is low, and the influence on the electrical conductivity of the terminal after welding is small.

[0058] In some embodiments, as Figure 3 and Figure 4 shown, the power module 100 further includes a drive terminal 50. The drive terminal 50 is located on one side of the substrate 10 close to the hollowed-out area. The drive terminal 50 is electrically connected to the first conductive layer and extends out of the substrate 10 in the direction close to the hollowed-out area.

[0059] Specifically, the terminals of both the drive terminal 50 and the power terminal 40 are very regular. The design that the drive terminal 50 is located on one side of the substrate 10 close to the hollowed-out area and the power terminal 40 is located on the side of the substrate away from the hollowed-out area enables a reasonable circuit layout to facilitate the connection of the upper-side PCB circuit of the power module. The connection method of the drive terminal 50 and the first conductive layer is the same as that of the power terminal 40, which will not be elaborated here. Among them, each power chip, the substrate 10, the drive terminal 40, and the power terminal 50 are electrically connected through bonding wires.

[0060] In some embodiments, the power module further includes a package body for packaging the AC conversion unit and the DC conversion unit.

[0061] Specifically, as Figure 4 and Figure 5 shown, epoxy resin 60 is molded on the power terminal 40, the drive terminal 50, and the substrate 10. As a polymer material, the epoxy resin 60 has unique chemical properties and excellent performance, such as high strength, wear resistance, corrosion resistance, high temperature resistance, good insulation performance, simple processing, and environmental protection and safety. Thus, through the epoxy resin 60, the fast power factor correction circuit Ⅰ, the slow power factor correction circuit 2, the resonant primary circuit 3, the resonant secondary circuit 4, the primary conversion circuit 5, and the secondary conversion circuit 6 can be encapsulated, realizing circuit insulation inside the power module 100, with strong anti-vibration performance, and preventing the internal bonding wires of the power module 100 from being damaged due to intense vibration.

[0062] A second aspect embodiment of the present invention proposes a power supply device 200, which includes the power module 100 of the above embodiment as Figure 5 shown.

[0063] According to the power supply device 200 of the embodiment of the present invention, by adopting the power module 100, the overall volume and self-weight can be reduced, and the material utilization rate and power density are improved.

[0064] In the third aspect of the embodiments of the present invention, a device is proposed. As Figure 5 shown, the device 300 includes the power supply device 200 of the above embodiments.

[0065] For the device 300 according to the embodiments of the present invention, by adopting the power supply device 200, the overall volume and its own weight can be reduced, and the material utilization rate and power density are improved.

[0066] In the fourth aspect of the embodiments of the present invention, a vehicle 1000 is proposed. As Figure 6 shown, the vehicle 1000 includes the power module 100 of the above embodiments, or includes the power supply device 200 of the above embodiments.

[0067] For the vehicle 1000 according to the embodiments of the present invention, by adopting the power module 100, or the power supply device 200, the waste of space can be reduced, and the material utilization rate and power density are improved.

[0068] In the description of this specification, the descriptions with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples", etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example.

[0069] Although the embodiments of the present invention have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present invention. The scope of the present invention is defined by the claims and their equivalents.

Claims

1. A power module, characterized in that, Comprising: Substrate; An AC conversion unit and a DC conversion unit, both the AC conversion unit and the DC conversion unit are disposed on the substrate, the AC conversion unit is used for power conversion of an AC signal, and the DC conversion unit is used for power conversion of a DC signal.

2. The power module according to claim 1, wherein The substrate includes a first side and a second side, the first side extends in a first direction, the second side extends in a second direction, and the first direction is perpendicular to the second direction; The AC conversion unit includes a fast power factor correction circuit and a slow power factor correction circuit. Among them, the fast power factor correction circuit is disposed close to the first side, the slow power factor correction circuit is disposed close to the second side, and the slow power factor correction circuit is electrically connected to the fast power factor correction circuit.

3. The power module according to claim 2, characterized in that The substrate further includes a third side, the third side extends in the first direction and is oppositely disposed to the first side; The AC conversion unit further includes a resonant primary circuit and a resonant secondary circuit, the resonant primary circuit is disposed close to the second side, the resonant secondary circuit is disposed close to the third side, and the resonant primary circuit is electrically connected to the slow power factor correction circuit and the resonant secondary circuit.

4. The power module according to claim 3, characterized in that, The substrate further includes a fourth side, the fourth side extends in the second direction and is oppositely disposed to the second side; The DC conversion unit includes a primary conversion circuit and a secondary conversion circuit, the primary conversion circuit is disposed close to the third side, the secondary conversion circuit is disposed close to the fourth side, and the primary conversion circuit is electrically connected to the secondary conversion circuit.

5. The power module according to claim 4, characterized in that, The substrate includes a first conductive layer, an intermediate layer, and a second conductive layer. A first conductive region is formed on the first conductive layer, and the first conductive region is close to the first side; The fast power factor correction circuit includes a fast recovery power chip, and the fast recovery power chip is disposed in the first conductive region.

6. The power module according to claim 5, characterized in that, A second conductive region is further formed on the first conductive layer, and the second conductive region is close to the second side; The slow power factor correction circuit includes a slow recovery power chip, the resonant primary circuit includes a first resonant power chip, and both the slow recovery power chip and the first resonant power chip are disposed in the second conductive region.

7. The power module according to claim 6, characterized in that, A third conductive region is further formed on the first conductive layer, and the third conductive region is close to the third side; The resonant secondary circuit includes a second resonant power chip, the primary conversion circuit includes a first conversion power chip, and both the second resonant power chip and the first conversion power chip are disposed in the third conductive region.

8. The power module according to claim 7, characterized in that, A fourth conductive region is further formed on the first conductive layer, and the fourth conductive region is close to the fourth side; The secondary conversion circuit includes a second conversion power chip, and the second conversion power chip is disposed in the fourth conductive region.

9. The power module according to claim 6, characterized in that, The second conductive region includes a first conductive sub-region and a second conductive sub-region, the first conductive sub-region is adjacent to the first conductive region, and the second conductive sub-region is adjacent to the third conductive region; The slow recovery power chip is disposed in the first conductive sub-region, and the first resonant power chip is disposed in the second conductive sub-region.

10. The power module according to claim 7, characterized in that, The third conductive region includes a third electron-conducting region and a fourth electron-conducting region. The third electron-conducting region is adjacent to the second conductive region, and the fourth electron-conducting region is adjacent to the fourth conductive region; The second resonant power chip is disposed in the third electron-conducting region, and the first conversion power chip is disposed in the fourth electron-conducting region.

11. The power module according to claims 1-10, characterized in that, A hollowed-out region is formed in the middle of the substrate; The power module further includes a power terminal. The power terminal is located on one side of the substrate away from the hollowed-out region. The power terminal is electrically connected to the first conductive layer and extends out of the substrate in a direction away from the hollowed-out region.

12. The power module according to claim 11, characterized in that, The power module further includes a drive terminal. The drive terminal is located on one side of the substrate close to the hollowed-out region. The drive terminal is electrically connected to the first conductive layer and extends out of the substrate in a direction close to the hollowed-out region.

13. The power module according to any one of claims 1-10, characterized in that, It further includes: A package body for packaging the AC conversion unit and the DC conversion unit.

14. A power supply device, characterized in that, Including the power module according to any one of claims 1-13.

15. A device, characterized in that, Including the power supply device according to claim 14.

16. A vehicle, characterized in that, Including the power module according to any one of claims 1-13, or including the power supply device according to claim 14.

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