Dual-phase high power density power supply based on double-sided cooling MOSFET

Abstract

The invention discloses a dual-phase high-power density power supply based on double-sided heat dissipation MOSFET, belonging to the technical field of switching power supplies. The power supply comprises: a dual-phase power supply main control chip generating control signals for each phase power supply; a first and second phase power supply main power half-bridge circuit, which is designed based on the double-sided heat dissipation MOSFET and generates output voltages for each phase power supply based on the control signals; the dual-phase power supply main control chip is arranged at the center of the back side of a PCB board, and the first and second phase power supply main power half-bridge circuits are symmetrically arranged at both ends of the PCB board; the double-sided heat dissipation MOSFET constituting the upper tube circuit in the first and second phase power supply main power half-bridge circuits is arranged on the front side of the PCB board, and the double-sided heat dissipation MOSFET constituting the lower tube circuit is arranged on the back side of the PCB board; the main power inductor in the first and second phase power supply main power half-bridge circuits is arranged above the double-sided heat dissipation MOSFET of the upper tube circuit, utilizing the longitudinal space above the power tubes and not occupying the PCB board area.

Description

Technical Field

[0001] The present invention belongs to the technical field of switching power supplies, and in particular relates to a dual-phase high power density power supply based on double-sided heat dissipation MOSFET. Background Art

[0002] Switching power supplies are a crucial component of electronic products and are ubiquitous in a wide variety of them. With the advancement of technology, electronic products are becoming increasingly smaller and more integrated. Therefore, as part of electronic product components, switching power supplies also need to be continuously reduced in size.

[0003] The design of a switching power supply typically requires a power control chip and its peripheral components, a main power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) switch, a power inductor, or a transformer. Therefore, to reduce the size of the power supply, some power supply designs attempt to reduce the number of components in the power supply circuit. For example, a shared multi-phase power control chip is used to achieve multi-phase power output, reducing the number of power control chips and their peripheral components, thereby reducing the PCB (Printed Circuit Board) footprint of the components in the circuit. However, improper layout design of the multi-phase power control chip and the power components of each phase can lead to interference in the power circuit and malfunction. Furthermore, an improper layout can cause uneven temperature distribution in the power circuit components, leading to excessively high operating temperatures of the main power circuit components and damage to the circuit. The reduction in size of electronic products means that the switching power supplies in these products must provide greater power within a smaller footprint.

[0004] For switching power supplies, the main power MOSFET in the power supply circuit must be able to withstand and conduct higher currents. When conducting high currents, the heat generated by the MOSFET must be dissipated promptly to prevent overheating and damage to the device. According to the operating principle of MOSFETs, conducting higher currents means greater losses and temperature rise. In this case, larger MOSFET packages are typically used to increase the device's heat dissipation area or implement heat dissipation measures to reduce the device's temperature rise when conducting higher currents. This, in turn, increases the size of the power supply circuit. Other approaches can reduce the temperature rise caused by losses by adopting power supply technologies with lower power transistor losses, such as soft switching and active clamping. However, these technologies increase circuit design complexity and the number of additional components, adding to the design difficulty and size. PCBs, commonly used in electronic circuit design, serve as the primary carrier for components and electrical connections in switching power supply designs and are widely used in power supply design. During power supply design, components in the power supply circuit are arranged on the front and back of the PCB. When the PCB is insufficient for all components, the PCB area is often increased to accommodate the layout of all power components. Increasing the PCB area also increases the overall power supply circuit area. Given these issues, improper multi-phase power supply circuit layout design can lead to uneven temperature distribution within the circuit, increasing circuit design risks. High-power power supplies utilize larger MOSFETs and require additional heat dissipation measures, increasing the overall size of the power supply. Furthermore, increasing the PCB layout area to accommodate component placement within the power supply circuit increases the overall size of the power supply, hindering miniaturization, integration, and reliability of the power supply circuit.

[0005] Therefore, there is an urgent need to design a switching power supply that can meet the design requirements of low temperature rise, multi-phase output, large current output, and high power density. Summary of the Invention

[0006] In order to solve the above problems existing in the prior art, the present invention provides a dual-phase high power density power supply based on double-sided heat dissipation MOSFET. The technical problem to be solved by the present invention is achieved through the following technical solutions:

[0007] An embodiment of the present invention provides a dual-phase high power density power supply based on a double-sided heat dissipation MOSFET, the dual-phase high power density power supply comprising:

[0008] Dual-phase power supply main control chip, used to generate control signals for each phase of the power supply;

[0009] A first-phase power supply main power half-bridge circuit and a second-phase power supply main power half-bridge circuit are configured to generate corresponding output voltages according to the control signal; the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit are respectively designed based on a plurality of double-sided heat dissipation MOSFET power tubes and a main power inductor;

[0010] The dual-phase power supply main control chip is arranged in the central area of ​​the back side of the PCB board, and the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit are symmetrically arranged at both end areas of the PCB board. The first-phase power supply main power half-bridge circuit includes a first upper tube circuit, a first lower tube circuit, and a first main power inductor, and the second-phase power supply main power half-bridge circuit includes a second upper tube circuit, a second lower tube circuit, and a second main power inductor. The first upper tube circuit, the second upper tube circuit, the first lower tube circuit, and the second lower tube circuit are respectively designed based on a plurality of double-sided heat dissipation MOSFET power tubes, and all the double-sided heat dissipation MOSFET power tubes constituting the first upper tube circuit and the second upper tube circuit are arranged on the front side of the PCB board, and all the double-sided heat dissipation MOSFET power tubes constituting the first lower tube circuit and the second lower tube circuit are arranged on the back side of the PCB board. The first main power inductor is arranged above all the double-sided heat dissipation MOSFET power tubes constituting the first upper tube circuit, and the second main power inductor is arranged above all the double-sided heat dissipation MOSFET power tubes constituting the second upper tube circuit. The longitudinal space above the first upper tube circuit and the second upper tube circuit is utilized, and no area of ​​the PCB board is occupied.

[0011] Beneficial effects of the present invention:

[0012] The dual-phase, high-power density power supply based on double-sided heat dissipation MOSFETs proposed in the present invention can meet the design requirements of low temperature rise, dual-phase output, high current output, and high power density. The overall power supply adopts a centralized high-density distribution. The design uses double-sided heat dissipation MOSFET power tubes to cleverly design. Not only can the PCB board located below the double-sided heat dissipation MOSFET be used to transfer the heat generated by the MOSFET power tube during operation, but the power inductor located closely above the double-sided heat dissipation MOSFET can also transfer the heat generated by the MOSFET power tube during operation. This power supply design achieves multi-directional heat conduction, significantly reducing the temperature rise of the MOSFET power tube during operation, ensuring the design reliability of the main power components of the power supply, and allowing the MOSFET power tube to conduct higher currents, thereby improving the power density of the designed power supply without increasing the MOSFET package size. The main power inductor of each phase of the power supply is arranged above the corresponding double-sided heat dissipation MOSFET power tube in each phase. This design method of mounting the main power inductor on the top surface of the double-sided heat dissipation MOSFET utilizes the longitudinal space above the double-sided heat dissipation MOSFET power tube, saving board area on the PCB board while facilitating the rapid heat transfer of the double-sided heat dissipation MOSFET during operation, thereby improving the power density of the designed power supply. The present invention utilizes a dual-phase power supply control chip as the main circuit control chip. Combined with the double-sided heat dissipation MOSFET power tubes and corresponding main power inductors symmetrically distributed on the PCB board for each phase of the power supply, the design achieves dual-phase power output under the control of a single main power supply chip, reducing the number of power supply circuit components. The dual-phase power supply control chip is located in the center of the PCB board, and the main power circuits of the two-phase power supply are symmetrically distributed at both ends of the PCB board. This separates the power supply control circuit portion from the main power circuit portions of each phase of the power supply, dispersing heat and preventing interference with each other's operations, thereby improving the design reliability of each power supply circuit portion. Furthermore, this power supply design can achieve a more uniform overall power supply temperature distribution, facilitate heat dissipation for the dual-phase power supply, avoid temperature rise accumulation at the location of the power supply control circuit portion, and improve the design reliability of the power supply. In general, the power supply designed by the present invention utilizes double-sided heat dissipation MOSFET power tubes for multi-directional heat transfer, so that the operating temperature rise of the device is low and a larger current can be conducted. The power supply main control chip uses a dual-phase power supply control chip, and the circuit layout is symmetrically designed, which realizes dual-phase power supply voltage output while saving the number of power supply circuit components. The symmetrical distribution improves the reliability of the circuit design of each part of the power supply and is also conducive to the uniform distribution of the overall power supply temperature. In addition, the main power inductor in the power supply circuit is arranged above the double-sided heat dissipation MOSFET power tube, saving the board area of ​​the device on the PCB board. From the above aspects, the low temperature rise and integration of the power supply design are improved, and the design reliability and power density of the overall power supply are improved.

[0013] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 Schematic diagram of a dual-phase high power density power supply based on double-sided heat dissipation MOSFET provided by an embodiment of the present invention;

[0015] Figure 2 This is a structural diagram of the top and bottom surfaces of a double-sided heat dissipation MOSFET power tube provided by an embodiment of the present invention;

[0016] Figure 3 This is a schematic structural diagram of a main power half-bridge circuit of the first phase power supply in a dual-phase high power density power supply provided by an embodiment of the present invention;

[0017] Figure 4 This is a schematic structural diagram of a main power half-bridge circuit of the second phase power supply in a dual-phase high power density power supply provided by an embodiment of the present invention;

[0018] Figure 5 This is a specific circuit diagram of a dual-phase high power density power supply based on double-sided heat dissipation MOSFET provided by an embodiment of the present invention;

[0019] Figure 6 1 is a schematic top view of a dual-phase high power density power supply based on double-sided heat dissipation MOSFET provided by an embodiment of the present invention;

[0020] Figure 7 1 is a schematic diagram of the structure of a dual-phase high power density power supply based on double-sided heat dissipation MOSFET provided by an embodiment of the present invention;

[0021] Figure 8 It is a side view structural diagram of a dual-phase high power density power supply based on double-sided heat dissipation MOSFET provided by an embodiment of the present invention.

[0022] Description of reference numerals:

[0023] 1-PCB board; 2-dual-phase power supply main control chip; 3-first upper tube circuit; 31-first double-sided cooling MOSFET power tube; 32-second double-sided cooling MOSFET power tube; 4-first lower tube circuit; 41-third double-sided cooling MOSFET power tube; 42-fourth double-sided cooling MOSFET power tube; 5-second upper tube circuit; 51-fifth double-sided cooling MOSFET power tube; 52-sixth double-sided cooling MOSFET power tube; 6-second lower tube circuit; 61-seventh double-sided cooling MOSFET power tube; 62-eighth double-sided cooling MOSFET power tube; 7-first main power inductor; 8-second main power inductor; 91-first area; 92-second area; 10-heat sink; 11-thermal conductive material. DETAILED DESCRIPTION

[0024] The present invention will be further described in detail below with reference to specific examples, but the embodiments of the present invention are not limited thereto.

[0025] An embodiment of the present invention provides a dual-phase high power density power supply based on double-sided heat dissipation MOSFET, the dual-phase power supply comprising:

[0026] Dual-phase power supply main control chip, used to generate control signals for each phase of the power supply;

[0027] The first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit are used to generate corresponding output voltages according to the control signal; the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit are respectively designed based on a plurality of double-sided heat dissipation MOSFET power tubes and a main power inductor;

[0028] The dual-phase power supply main control chip is arranged in the central area of ​​the back side of the PCB board, and the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit are symmetrically arranged at both end areas of the PCB board. The first-phase power supply main power half-bridge circuit includes a first upper tube circuit, a first lower tube circuit, and a first main power inductor, and the second-phase power supply main power half-bridge circuit includes a second upper tube circuit, a second lower tube circuit, and a second main power inductor. The first upper tube circuit, the second upper tube circuit, the first lower tube circuit, and the second lower tube circuit are respectively designed based on a plurality of double-sided heat dissipation MOSFET power tubes, and all the double-sided heat dissipation MOSFET power tubes constituting the first upper tube circuit and the second upper tube circuit are arranged on the front side of the PCB board, and all the double-sided heat dissipation MOSFET power tubes constituting the first lower tube circuit and the second lower tube circuit are arranged on the back side of the PCB board. The first main power inductor is arranged above all the double-sided heat dissipation MOSFET power tubes constituting the first upper tube circuit, and the second main power inductor is arranged above all the double-sided heat dissipation MOSFET power tubes constituting the second upper tube circuit. The longitudinal space above the first upper tube circuit and the second upper tube circuit is utilized without occupying the area of ​​the PCB board.

[0029] like Figure 1As shown, the dual-phase high power density power supply of the embodiment of the present invention includes: a dual-phase power supply main control chip 2 as the power supply control circuit part of the power supply, a first-phase power supply main power half-bridge circuit and a second-phase power supply main power half-bridge circuit as the main power circuit part of the power supply, the first-phase power supply main power half-bridge circuit includes a first upper tube circuit 3 and a first lower tube circuit 4, and the second-phase power supply main power half-bridge circuit includes a second upper tube circuit 5 and a second lower tube circuit 6. The power supply of the present invention also includes: a first main power inductor 7 in the first-phase power supply main power half-bridge circuit and a second main power inductor 8 in the second-phase power supply main power half-bridge circuit. The power supply of the embodiment of the present invention also includes: peripheral related control devices, which are selected according to actual needs and can be arranged on the front side of the PCB board 1 as shown in FIG. Figure 1 The first area 91 shown in FIG. 1 may also be arranged on the back of the PCB board as shown in FIG. Figure 1 Within the second region 92 shown.

[0030] like Figure 1 As shown, the overall power supply design of the embodiment of the present invention adopts a centralized, high-density distribution, selecting a PCB board 1 as the carrier for carrying the designed power supply and transmitting signals and currents in the circuit. A dual-phase power supply main control chip 2 is arranged in the central area on the back of the PCB board 1, and peripheral related control components are arranged in a second area 92 surrounding the dual-phase power supply main control chip 2. Symmetrically with the dual-phase power supply main control chip 2 in the central area of ​​the PCB board 1, a first-phase power supply main power half-bridge circuit and a second-phase power supply main power half-bridge circuit are arranged at the two end areas of the PCB board 1, respectively. The first-phase power supply main power half-bridge circuit is composed of a first upper tube circuit 3 composed of several double-sided heat dissipation MOSFET power tubes, a first lower tube circuit 4 composed of several double-sided heat dissipation MOSFET power tubes, and a first main power inductor 7. All components of the first-phase power supply main power half-bridge circuit are arranged at the same end of the PCB board 1. Specifically, the first upper tube circuit 3 and the first lower tube circuit 4 in the first-phase power supply main power half-bridge circuit are symmetrically distributed on the front and back sides of the PCB board 1. The bottoms of the first upper tube circuit 3 and the first lower tube circuit 4 are mounted on the PCB board 1, and a first main power inductor 7 is arranged above all double-sided cooling MOSFET power tubes in the first upper tube circuit 3. Similarly, a second upper tube circuit 5 composed of a plurality of double-sided cooling MOSFET power tubes, a second lower tube circuit 6 composed of a plurality of double-sided cooling MOSFET power tubes, and a second main power inductor 8 constitute the second-phase power supply main power half-bridge circuit. All components of this second-phase power supply main power half-bridge circuit are arranged on the other end of the PCB board 1. Specifically, the second upper tube circuit 5 and the second lower tube circuit 6 in the second-phase power supply main power half-bridge circuit are symmetrically distributed on the front and back sides of the PCB board 1. The bottoms of the second upper tube circuit 5 and the second lower tube circuit 6 are mounted on the PCB board 1, and a second main power inductor 8 is arranged above all double-sided cooling MOSFET power tubes in the second upper tube circuit 5.

[0031] The present invention adopts a centralized layout design of double-sided heat dissipation MOSFET power tubes to build a high power density power supply. In the design of the present invention, all double-sided heat dissipation MOSFET power tubes constituting the upper tube circuit are respectively mounted on both sides of a PCB board and a main power inductor. In this way, when the double-sided heat dissipation MOSFET power tube is conducting a large current, the heat generated by the PCB board and the main power inductor on both sides of the double-sided heat dissipation MOSFET power tube is respectively utilized to conduct the heat generated by the device, which can greatly reduce the temperature rise of the power device, improve the reliability of the device, and increase the current that the main power device can pass, thereby increasing the power of the designed power supply. Secondly, the present invention adopts a bottom-up device design layout method, and arranges the main power inductor above all double-sided heat dissipation MOSFET power tubes constituting the upper tube circuit, saving the board space occupied by the main power inductor on the PCB board, utilizing the longitudinal space above all double-sided heat dissipation MOSFET power tubes constituting the upper tube circuit, and improving the power density of the power supply.

[0032] The main control chip of the present invention adopts a dual-phase power supply main control chip. By using a single power supply main control chip, the dual-phase power supply circuit can be controlled and output dual-phase power supply voltages. This reduces the number of power supply main control chips and their peripheral related control components, thereby reducing the board area occupied by the power supply on the PCB board. The design of the present invention can reduce the size of the entire power supply. At the same time, the dual-phase power supply main control chip and its peripheral related control components are arranged in the central area of ​​the PCB board, and the main power transistors and power inductors of each phase power supply are symmetrically arranged at both ends of the PCB board. When the designed dual-phase power supply is in operation, the main power transistors and main power inductors of each phase power supply generate heat at both ends of the PCB board without affecting the power supply control circuit portion in the center of the PCB board. In addition, this design arrangement allows the heat of the main power components of each phase power supply to be relatively dispersed and not affect each other. It can be seen that the power supply design of the present invention is centralized and symmetrically distributed, which can evenly distribute the temperature rise of each part of the power supply, improve the design reliability of the power supply, and spatially isolate the power supply control circuit portion and the main power circuit portion of each phase power supply to prevent mutual interference between the circuit components of the power supply during circuit operation, improve the reliability of the power supply circuit design, and ensure the stability of the operation of the main power circuit of each phase power supply.

[0033] Furthermore, all double-sided heat dissipation MOSFET power tubes constituting the upper tube circuit and the lower tube circuit in the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit of the embodiment of the present invention have a bottom surface heat dissipation pad and a top surface heat dissipation pad. A specific structure of each double-sided heat dissipation MOSFET power tube is as follows: Figure 2As shown, the top heat dissipation pad is denoted as D, and the bottom heat dissipation pad is denoted as C. The bottom heat dissipation pad C of each double-sided heat dissipation MOSFET power tube constituting the first upper tube circuit 3 in the first-phase power supply main power half-bridge circuit and the second upper tube circuit 5 in the second-phase power supply main power half-bridge circuit is mounted to the PCB board, and the top heat dissipation pad D is mounted to the corresponding main power inductor. The bottom heat dissipation pad C of each double-sided heat dissipation MOSFET power tube constituting the first lower tube circuit 4 in the first-phase power supply main power half-bridge circuit and the second lower tube circuit 6 in the second-phase power supply main power half-bridge circuit is mounted to the PCB board, and the top heat dissipation pad D is selectively mounted to a heat sink based on heat dissipation requirements. In other words, each double-sided heat dissipation MOSFET power tube constituting the first lower tube circuit 4 in the first-phase power supply main power half-bridge circuit and the second lower tube circuit 6 in the second-phase power supply main power half-bridge circuit can be optionally mounted with a heat sink based on heat dissipation requirements.

[0034] Furthermore, the present invention exemplarily designs the following Figure 3 The first-phase power supply main power half-bridge circuit based on double-sided heat dissipation MOSFET shown includes: a first double-sided heat dissipation MOSFET power tube 31, a second double-sided heat dissipation MOSFET power tube 32, a third double-sided heat dissipation MOSFET power tube 41, a fourth double-sided heat dissipation MOSFET power tube 42 and a first main power inductor 7; wherein the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32 constitute the first upper tube circuit 3 in the first-phase power supply main power half-bridge circuit, and are arranged side by side on the front side of the PCB board 1; the third double-sided heat dissipation MOSFET power tube 41 and the fourth double-sided heat dissipation MOSFET power tube 42 constitute the first lower tube circuit 4 in the first-phase power supply main power half-bridge circuit, and are arranged side by side on the back side of the PCB board 1; and the first main power inductor 7 is arranged above the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32. The bottom surface heat dissipation pads C of the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32 are both in close contact with the PCB board 1; the top surfaces of the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32 are both provided with a thermally conductive material 11, which can be a thermally conductive gasket, so that the top surface heat dissipation pads D of the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32 are in close contact with the thermally conductive material 11; the other side of the thermally conductive material 11 is in close contact with the first main power inductor 7, and a heat sink 10 is provided on the other side of the first main power inductor 7. More specifically, the implementation method in the power supply design is as follows:

[0035] The first upper tube circuit 3 in the first-phase power supply main power half-bridge circuit is implemented using two double-sided heat dissipation MOSFET power tubes: a first double-sided heat dissipation MOSFET power tube 31 and a second double-sided heat dissipation MOSFET power tube 32. The first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32 are connected in parallel in the power supply circuit. During the power supply design, the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32 are arranged side by side on the front surface of the PCB board 1, and the bottom surface heat dissipation pads C of the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32 are closely attached to the PCB board 1, with the PCB board 1 serving as the first heat dissipation conduction path for the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32. A thermally conductive material 11 is disposed on the top surfaces of the first and second double-sided heat dissipation MOSFET power tubes 31 and 32, ensuring that the top heat dissipation pads D of the first and second double-sided heat dissipation MOSFET power tubes 31 and 32 are in close contact with the thermally conductive material 11. The thermally conductive material 11 and the first main power inductor 7 serve as a second heat dissipation pathway for the first and second double-sided heat dissipation MOSFET power tubes 31 and 32. The other surface of the thermally conductive material 11 is in close contact with the first main power inductor 7, and a heat sink 10 is disposed on the other surface of the first main power inductor 7. It should be noted that the first and second double-sided heat dissipation MOSFET power tubes 31 and 32 are preferably double-sided heat dissipation MOSFET devices of the same model and specification.

[0036] Here, the design uses a first double-sided heat dissipation MOSFET power tube 31 and a second double-sided heat dissipation MOSFET power tube 32 in parallel. When the circuit is working, they can jointly bear the current passing through the circuit, reduce the loss and stress of a single power tube, ensure the reliable operation of the device, and improve the overall power supply working current and power. Using double-sided heat dissipation MOSFET power tubes of the same model and specification can further improve the uniformity of heat and current distribution of each MOSFET, and improve the design reliability of the power supply. The power supply design of the present invention uses double-sided heat dissipation MOSFET power tubes, and designs the bottom heat dissipation pad C and the top heat dissipation pad D of the double-sided heat dissipation MOSFET power tube, which are respectively mounted on the PCB board and the thermal conductive material, wherein the thermal conductive material is also mounted on the first main power inductor 7, Figure 3The parallel black arrows in the figure only indicate the direction of heat dissipation. During normal operation of the power supply, when current flows through the double-sided cooling MOSFET power tube, the heat generated by the double-sided cooling MOSFET power tube can be transferred to the PCB board 1 through the bottom surface heat dissipation pad C and to the first main power inductor 7 through the top surface heat dissipation pad D and through the thermal conductive material 11. This multi-directional heat conduction of the double-sided cooling MOSFET power tube can significantly reduce the temperature rise of the double-sided cooling MOSFET power tube, thereby enabling its application in higher current and higher power circuit designs. When designing the power supply circuit, a heat sink 10 is placed on the top surface of the first main power inductor 7 to further remove the heat generated by the first main power inductor 7 during operation and transferred by the double-sided cooling MOSFET power tube, thereby reducing the temperature of the entire power supply circuit and enabling the designed power supply to operate at higher current and higher power. Furthermore, the first main power inductor 7 designed in the present invention is mounted above the double-sided cooling MOSFET power tube via the thermal conductive material 11, utilizing the longitudinal space above the double-sided cooling MOSFET power tube, saving the layout area of ​​the first main power inductor 7 on the PCB board 1, and achieving a centralized and compact design, thereby improving the power density of the entire power supply. Therefore, the present invention is designed to conduct and dissipate the heat generated by the main heating device of each phase power supply and the main power tube during operation in different directions, so that by adopting double-sided heat dissipation MOSFET power tubes and performing reasonable layout design, low temperature rise of power devices during operation and high power and high density of power supply circuits can be achieved.

[0037] Similar, such as Figure 4 The second-phase power supply main power half-bridge circuit shown includes: a fifth double-sided cooling MOSFET power tube 51, a sixth double-sided cooling MOSFET power tube 52, a seventh double-sided cooling MOSFET power tube 61, an eighth double-sided cooling MOSFET power tube 62, and a second main power inductor 8. The fifth and sixth double-sided cooling MOSFET power tubes 51 and 52 constitute the second upper tube circuit 5 of the second-phase power supply main power half-bridge circuit and are arranged side by side on the front of the PCB board 1. The seventh and eighth double-sided cooling MOSFET power tubes 61 and 62 constitute the second lower tube circuit 6 of the second-phase power supply main power half-bridge circuit and are arranged side by side on the back of the PCB board 1. The second main power inductor 8 is arranged above the fifth and sixth double-sided cooling MOSFET power tubes 51 and 52. The specific implementation is similar to that of the first-phase power supply main power half-bridge circuit. Please refer to the description of the first-phase power supply main power half-bridge circuit above and will not be repeated here.

[0038] For example, Figure 5The dual-phase power supply main control chip 2 of the present invention shown includes six control signal output pins, three of which are used to control the switching states of all double-sided heat dissipation MOSFET power tubes in the first-phase power supply main power half-bridge circuit, and the other three are used to control the switching states of all double-sided heat dissipation MOSFET power tubes in the second-phase power supply main power half-bridge circuit. Specifically, the key pins of the dual-phase power supply main control chip 2 include: an output pin TG1 for generating a first control signal for controlling the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32; an output pin BG1 for generating a second control signal for controlling the third double-sided heat dissipation MOSFET power tube 41 and the fourth double-sided heat dissipation MOSFET power tube 42; an output pin SW1 for controlling a third control signal connecting the midpoint of the upper tube circuit and the lower tube circuit in the first-phase power supply main power half-bridge circuit; an output pin TG2 for generating a fourth control signal for controlling the fifth double-sided heat dissipation MOSFET power tube 51 and the sixth double-sided heat dissipation MOSFET power tube 52; an output pin BG2 for generating a fifth control signal for controlling the seventh double-sided heat dissipation MOSFET power tube 61 and the eighth double-sided heat dissipation MOSFET power tube 62; and an output pin SW2 for controlling a sixth control signal connecting the midpoint of the upper tube circuit and the lower tube circuit in the second-phase power supply main power half-bridge circuit.

[0039] For example, Figure 5The present invention provides a specific design of a first-phase power supply main power half-bridge circuit. In the first-phase power supply main power half-bridge circuit: the gate of the first double-sided heat dissipation MOSFET power tube 31 and the gate of the second double-sided heat dissipation MOSFET power tube 32 are both connected to the output pin TG1 of the first control signal of the dual-phase power supply main control chip 2, the drain of the first double-sided heat dissipation MOSFET power tube 31 and the drain of the second double-sided heat dissipation MOSFET power tube 32 are both connected to the input voltage, the source of the first double-sided heat dissipation MOSFET power tube 31 and the source of the second double-sided heat dissipation MOSFET power tube 32 are both connected to the output pin SW1 of the third control signal of the dual-phase power supply main control chip 2; the third double-sided heat dissipation MOSFET power tube The gate of the transistor 41 and the gate of the fourth double-sided heat dissipation MOSFET power transistor 42 are both connected to the output pin BG1 of the second control signal of the dual-phase power supply main control chip 2. The drain of the third double-sided heat dissipation MOSFET power transistor 41 and the drain of the fourth double-sided heat dissipation MOSFET power transistor 42 are both connected to the output pin SW1 of the third control signal of the dual-phase power supply main control chip 2. The source of the third double-sided heat dissipation MOSFET power transistor 41 and the source of the fourth double-sided heat dissipation MOSFET power transistor 42 are both grounded. One end of the first main power inductor 7 is connected to the output pin SW1 of the third control signal of the dual-phase power supply main control chip 2. The other end of the first main power inductor 7 serves as the output end of the first phase (phase A) power supply, outputting the A phase output voltage. Figure 5 As shown in the second-phase power supply main power half-bridge circuit: the gate of the fifth double-sided heat dissipation MOSFET power tube 51 and the gate of the sixth double-sided heat dissipation MOSFET power tube 52 are both connected to the output pin TG2 of the fourth control signal of the dual-phase power supply main control chip 2, the drain of the fifth double-sided heat dissipation MOSFET power tube 51 and the drain of the sixth double-sided heat dissipation MOSFET power tube 52 are both connected to the input voltage, and the source of the fifth double-sided heat dissipation MOSFET power tube 51 and the source of the sixth double-sided heat dissipation MOSFET power tube 52 are both connected to the output pin SW2 of the sixth control signal of the dual-phase power supply main control chip 2; the gate of the seventh double-sided heat dissipation MOSFET power tube 61 and the eighth double-sided heat dissipation MOSFET power tube 62 are both connected to the output pin SW2 of the sixth control signal of the dual-phase power supply main control chip 2. The gates of the MOSFET power tubes 62 are connected to the fifth control signal output pin BG1 of the dual-phase power supply main control chip 2. The drains of the seventh double-sided heat dissipation MOSFET power tube 61 and the eighth double-sided heat dissipation MOSFET power tube 62 are connected to the sixth control signal output pin SW2 of the dual-phase power supply main control chip 2. The sources of the seventh double-sided heat dissipation MOSFET power tube 61 and the eighth double-sided heat dissipation MOSFET power tube 62 are both grounded. One end of the second main power inductor 8 is connected to the sixth control signal output pin SW2 of the dual-phase power supply main control chip 2. The other end of the second main power inductor 8 serves as the output end of the second phase (B phase) power supply, outputting the B phase output voltage. A more specific circuit description is as follows:

[0040] In the dual-phase power supply designed by the present invention, the like-named terminals D (drain), S (source), and G (gate) of the first and second double-sided cooling MOSFET power tubes 31, 32 are connected in a one-to-one correspondence. The first and second double-sided cooling MOSFET power tubes 31, 32 are designed in parallel, together forming the first upper tube circuit 3 in the main power half-bridge circuit of the first phase power supply. Similarly, the like-named terminals D, S, and G of the fifth and sixth double-sided cooling MOSFET power tubes 51, 52 in the dual-phase power supply designed by the present invention are connected in a one-to-one correspondence. The fifth and sixth double-sided cooling MOSFET power tubes 51, 52 are designed in parallel, together forming the second upper tube circuit 5 in the main power half-bridge circuit of the second phase power supply. The D-pole of the first and second double-sided cooling MOSFET power tubes 31 and 32 is also connected to the D-pole of the fifth and sixth double-sided cooling MOSFET power tubes 51 and 52, together serving as the input terminals of the dual-phase power supply based on double-sided cooling MOSFETs designed in the present invention, receiving an external input voltage. The D, S, and G-pole terminals of the third and fourth double-sided cooling MOSFET power tubes 41 and 42 in the dual-phase power supply designed in the present invention are connected in a one-to-one correspondence. The third and fourth double-sided cooling MOSFET power tubes 41 and 42 are designed in parallel and together constitute the first lower tube circuit 4 in the main power half-bridge circuit of the first phase power supply. The D-pole connected together by the third double-sided heat dissipation MOSFET power tube 41 and the fourth double-sided heat dissipation MOSFET power tube 42 is also connected to the S-pole connected together by the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32, and is also connected to one end of the first main power inductor 7. This node is also connected to the third control signal output pin SW1 of the dual-phase power supply main control chip 2, receiving the control signal from the dual-phase power supply main control chip 2. The other end of the first main power inductor 7 is connected to the output terminal of the A-phase power supply of the power supply designed by the present invention, providing an output voltage to the outside. The S-pole connected together by the third double-sided heat dissipation MOSFET power tube 41 and the fourth double-sided heat dissipation MOSFET power tube 42 is connected to the output ground of the A-phase power supply of the designed power supply.

[0041] Similarly, the D, S, and G terminals of the seventh and eighth double-sided cooling MOSFET power transistors 61 and 62 in the dual-phase power supply of the present invention are connected in a one-to-one correspondence. These seventh and eighth double-sided cooling MOSFET power transistors 61 and 62 are connected in parallel, together forming the second lower transistor circuit 6 in the main power half-bridge circuit of the second-phase power supply. The D terminal of the seventh and eighth double-sided cooling MOSFET power transistors 61 and 62 is also connected to the S terminal of the fifth and sixth double-sided cooling MOSFET power transistors 51 and 52, and to one end of the second main power inductor 8. This node is also connected to the sixth control signal output pin SW2 of the dual-phase power supply main control chip 2, receiving control signals from the dual-phase power supply main control chip 2. The other end of the second main power inductor 8 is connected to the output terminal of the B-phase power supply of the power supply of the present invention, providing an external output voltage. The S poles of the seventh double-sided heat dissipation MOSFET power tube 61 and the eighth double-sided heat dissipation MOSFET power tube 62 connected together are connected to the output ground of the B-phase power supply of the designed power supply.

[0042] In addition, the G-pole connected together by the first and second double-sided cooling MOSFET power tubes 31 and 32 is also connected to the first control signal output pin TG1 of the dual-phase power supply master chip 2, receiving the control signal provided by the dual-phase power supply master chip 2 for the upper tube circuit in the first phase power main power half-bridge circuit. The G-pole connected together by the third and fourth double-sided cooling MOSFET power tubes 41 and 42 is also connected to the second control signal output pin BG1 of the dual-phase power supply master chip 2, receiving the control signal provided by the dual-phase power supply master chip 2 for the lower tube circuit in the first phase power main power half-bridge circuit. Similarly, the G-pole connected together by the fifth and sixth double-sided cooling MOSFET power tubes 51 and 52 is also connected to the fourth control signal output pin TG2 of the dual-phase power supply master chip 2, receiving the control signal provided by the dual-phase power supply master chip 2 for the upper tube circuit in the second phase power main power half-bridge circuit. The G poles of the seventh double-sided heat dissipation MOSFET power tube 61 and the eighth double-sided heat dissipation MOSFET power tube 62 are connected together, and are also connected to the output pin BG2 of the fifth control signal of the dual-phase power supply master control chip 2, and receive the control signal provided by the dual-phase power supply master control chip 2 for the lower tube circuit in the second phase power supply main power half-bridge circuit.

[0043] The power supply designed by the present invention is connected in the above manner to generate two output voltages of phase A and phase B under the same input voltage.

[0044] The dual-phase, high-power-density power supply based on double-sided cooling MOSFETs designed by the present invention utilizes a single dual-phase power supply master chip to generate the control signals required for two sets of main power half-bridge circuits. The control signals required for the first set of main power half-bridge circuits are provided by the first control signal output pin TG1 and the second control signal output pin BG1, respectively. These control signals control the regular on / off switching of the first, second, third, and fourth double-sided cooling MOSFET power tubes 31, 32, 41, and 42 corresponding to the designed A-phase power supply. In conjunction with the first main power inductor 7 corresponding to the designed A-phase power supply, the external input voltage from the dual-phase power supply is converted into the desired output voltage, which is then output at the output terminal of the A-phase power supply. The third control signal output pin SW1 of the dual-phase power supply master control chip 2 is connected to the midpoint of the first-phase power supply main power half-bridge circuit, which is composed of the first double-sided cooling MOSFET power tube 31, the second double-sided cooling MOSFET power tube 32, the third double-sided cooling MOSFET power tube 41, and the fourth double-sided cooling MOSFET power tube 42. In conjunction with the first-phase power supply main power half-bridge circuit, the control signals required by the second group of main power half-bridge circuits are provided by the fourth control signal output pin TG2 and the fifth control signal output pin BG2, respectively. These control signals control the regular on / off of the fifth double-sided cooling MOSFET power tube 51, the sixth double-sided cooling MOSFET power tube 52, the seventh double-sided cooling MOSFET power tube 61, and the eighth double-sided cooling MOSFET power tube 62 in the designed second-phase main power half-bridge circuit. In conjunction with the designed second main power inductor 8 of the B-phase power supply, the external input voltage from the dual-phase power supply is converted into the required output voltage, which is output at the output terminal of the B-phase power supply. Among them, the output pin SW2 of the sixth control signal of the dual-phase power supply main control chip 2 is connected to the midpoint of the second-phase power supply main power half-bridge circuit composed of the fifth double-sided heat dissipation MOSFET power tube 51, the sixth double-sided heat dissipation MOSFET power tube 52, the seventh double-sided heat dissipation MOSFET power tube 61, and the eighth double-sided heat dissipation MOSFET power tube 62, and cooperates with the second-phase power supply main power half-bridge circuit to adjust the power conversion of the B-phase power supply.

[0045] Furthermore, the dual-phase high-power density power supply designed by the present invention can be a symmetrical power supply with the same electrical specifications for each phase; wherein the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit use the same power supply components, the same circuit parameters, and the same layout design; all double-sided heat dissipation MOSFET power tubes in the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit use double-sided heat dissipation MOSFETs of the same model and specification; and the main power inductors in the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit use power inductors of the same model and specification. More specifically:

[0046] The first double-sided heat dissipation MOSFET power tube 31, the second double-sided heat dissipation MOSFET power tube 32, the third double-sided heat dissipation MOSFET power tube 41, the fourth double-sided heat dissipation MOSFET power tube 42, the fifth double-sided heat dissipation MOSFET power tube 51, the sixth double-sided heat dissipation MOSFET power tube 52, the seventh double-sided heat dissipation MOSFET power tube 61, and the eighth double-sided heat dissipation MOSFET power tube 62 designed in the present invention are preferably double-sided heat dissipation MOSFET power tubes of the same model and specification. The first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32 use devices of the same model and specification. This facilitates the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32 to act as parallel MOSFETs during circuit operation, passing a uniform current to jointly bear the current stress during circuit operation, thereby enhancing the current flow and heat dissipation advantages of the first double-sided heat dissipation MOSFET power tube 31 and the second double-sided heat dissipation MOSFET power tube 32 used in parallel. Similarly, the third double-sided heat dissipation MOSFET power tube 41 and the fourth double-sided heat dissipation MOSFET power tube 42 use devices of the same model and specification. This facilitates the third double-sided heat dissipation MOSFET power tube 41 and the fourth double-sided heat dissipation MOSFET power tube 42 acting as parallel MOSFETs during circuit operation. By uniformly dissipating current, they jointly bear the current stress during circuit operation, thereby enhancing the flow and heat dissipation advantages of the third double-sided heat dissipation MOSFET power tube 41 and the fourth double-sided heat dissipation MOSFET power tube 42 used in parallel. Similar designs and effects are also reflected in the parallel fifth double-sided heat dissipation MOSFET power tube 51, the sixth double-sided heat dissipation MOSFET power tube 52, and the parallel seventh double-sided heat dissipation MOSFET power tube 61, the eighth double-sided heat dissipation MOSFET power tube 62. In addition, the first main power inductor 7 of the A-phase power supply and the second main power inductor 8 of the B-phase power supply can also be designed to use devices of the same model and specification. It can be seen that when the present invention designs the A-phase power supply and the B-phase power supply, other circuit components, circuit parameters, and circuit layouts can also be designed to be the same, so that the A-phase power supply and the B-phase power supply are symmetrical power supplies with the same electrical specifications. This simplifies the selection and design process of the dual-phase symmetrical power supply components while improving the parameter consistency of the design of power supplies with similar specifications in each phase.

[0047] The present invention adopts a double-sided heat dissipation MOSFET power tube as the main power switch tube of the power supply circuit, and adopts a dual-phase power supply main control chip to provide the control signal of the designed dual-phase power supply to realize a dual-phase power supply. The main power tube in the dual-phase power supply designed by the present invention adopts a double-sided heat dissipation MOSFET power tube, which can reduce the temperature rise of the main power device of the power supply during operation, which is beneficial to improve the power of the power supply designed by the present invention. A single main control power supply chip is used in the design to realize the output of the dual-phase power supply, which reduces the number of the designed dual-phase power supply control chip and its peripheral related devices, which is beneficial to reducing the size of the designed dual-phase power supply and improving the power density of the power supply. When designing the power supply, the design method of the same power supply device, the same circuit parameters and the same layout is adopted, and the dual-phase power supply design realized simplifies the multi-phase power supply design time and improves the power supply design efficiency. In the dual-phase power supply circuit designed by the present invention, the main power switch tubes of the A-phase power supply and the B-phase power supply adopt double-sided heat dissipation MOSFET power tubes of the same model and specification, which not only unifies the selection of power tubes during power supply design, but also helps to give play to the advantages of parallel connection of power tubes in increasing current flow and reducing temperature rise for double-sided heat dissipation MOSFET power tubes used in parallel; at the same time, the selection and design of power devices of the same model and specification shortens the design cycle of multi-phase power supply circuits of similar specifications. In particular, for the design of dual-phase power supplies with the same output voltage and current, the designed dual-phase power supply main power inductors also adopt devices of the same model and specification, further reducing the difficulty of overall dual-phase power supply circuit device design and selection, and optimizing the power supply design cycle. A symmetrical power supply structure is designed, and the main power devices used in the design adopt devices of the same model and specification. The power supply structure and circuit devices of each phase are designed to be the same, making the power supply design more symmetrical and the overall temperature distribution of the dual-phase power supply more uniform. Through the design of power supply circuit parameters, thermal design is more convenient and the power supply design reliability is higher.

[0048] Figure 6 The top view of the dual-phase high power density power supply based on double-sided heat dissipation MOSFET proposed by the present invention is shown. Figure 6It can be seen that on the front of PCB board 1, a first double-sided cooling MOSFET power tube 31 and a second double-sided cooling MOSFET power tube 32, which constitute the first top tube circuit 3 in the first-phase power supply main power half-bridge circuit, are arranged side by side at one end of PCB board 1. A first main power inductor 7 is arranged above the first and second double-sided cooling MOSFET power tubes 31 and 32. Symmetrically, in the center area of ​​PCB board 1, a fifth and sixth double-sided cooling MOSFET power tubes 51 and 52, which constitute the second top tube circuit 5 in the second-phase power supply main power half-bridge circuit, are arranged side by side at the other end of PCB board 1 in a similar design. A second main power inductor 8 is arranged above the fifth and sixth double-sided cooling MOSFET power tubes 51 and 52. A first area 91 is arranged in the center of the front of PCB board 1. This area is used to house some peripheral control components, such as control resistors and capacitors, that are associated with the dual-phase power supply main control chip 2.

[0049] Figure 7 The bottom view of the dual-phase high power density power supply based on double-sided heat dissipation MOSFET proposed by the present invention is shown. Figure 7 It can be seen that on the back side of the PCB board 1, corresponding to the first upper tube circuit 3 in the first-phase main power half-bridge circuit, the third and fourth double-sided cooling MOSFET power tubes 41 and 42, which constitute the first lower tube circuit 4 in the first-phase main power half-bridge circuit, are arranged side by side. Similarly, on the back side of the PCB board 1, corresponding to the second upper tube circuit 5 in the second-phase main power half-bridge circuit, the seventh and eighth double-sided cooling MOSFET power tubes 61 and 62, which constitute the second lower tube circuit 6 in the second-phase main power half-bridge circuit, are arranged side by side. The dual-phase power supply main control chip 2 is arranged in the central area of ​​the back side of the PCB board 1. A second area 92 is arranged around the dual-phase main power control chip 2. This second area 92 is used to house some peripheral control components, such as control resistors and capacitors, that are peripheral to the dual-phase main power control chip 2.

[0050] Figure 8The side view of the dual-phase high power density power supply based on double-sided heat dissipation MOSFET proposed by the present invention is shown, and the positional relationship of each component in the dual-phase power supply can be seen as a whole. The overall dual-phase power supply design adopts a method in which the dual-phase power supply main control chip is centered and the power phases are symmetrically distributed on both sides. This design method can well isolate and separate the power control circuit part and the power circuit part of the designed dual-phase power supply, avoid mutual interference between the designed dual-phase power supply control circuit and the power circuit of each phase power supply, and enhance the circuit reliability of the designed dual-phase power supply. At the same time, the center of the PCB board is used as the power control circuit area, and the two ends of the PCB board are the power circuit areas. When the designed dual-phase power supply circuit is working, the heat generated by the main heat-generating components, the power tube and the power inductor, can be dispersed around the PCB board, which is beneficial to the heat dissipation of the power supply, and also avoids the influence of excessive power supply heat on the power control circuit part, thereby improving the design reliability of the overall designed dual-phase power supply.

[0051] The dual-phase power supply designed by the present invention is designed to be symmetrical with respect to the center of the PCB board as a whole, with the A-phase power supply and the B-phase power supply correspondingly distributed at both ends. In addition, the upper tube circuit and the lower tube circuit of the main power half-bridge circuit of each phase power supply are designed to be symmetrically distributed on the front and back sides of the PCB board. The dual-phase power supply designed by the present invention is designed to be symmetrical with respect to the center as a whole and symmetrical with respect to the PCB board in part, which can make the temperature rise generated by the various parts of the overall power supply more uniform when working, avoid the excessive temperature of the devices in some areas of the dual-phase power supply, and reduce the risk of damage to the devices during use. In addition, the symmetrical structure also simplifies the process of thermal design of the designed dual-phase power supply. The parameters and structure of the thermal design of the phase A power supply in the exemplary designed dual-phase power supply can be selectively used as the parameters and structure of the thermal design of the phase B power supply in the designed dual-phase power supply, or can be fine-tuned in design.

[0052] It should be noted that the present invention takes the dual-phase power supply design as an example to provide a detailed description of the solution implementation, but the dual-phase high power density power supply design idea based on double-sided heat dissipation MOSFET proposed in the present invention can be extended to multi-phase power supply design. The difference is that Figure 5 The specific circuit shown can be expanded to realize a multi-phase power supply. The design adopts a multi-phase power supply main control chip, refers to the circuit design implementation method of the dual-phase power supply of the present invention, and the devices of the multi-phase power supply design are arranged on the PCB board in a similar way to the dual-phase power supply design, thereby meeting the design requirements of low temperature rise, multi-phase output, large current output, and high power density.

[0053] In summary, the dual-phase, high-power-density power supply based on double-sided heat dissipation MOSFETs proposed in the embodiments of the present invention can meet the design requirements of low temperature rise, dual-phase output, high current output, and high power density. The design utilizes double-sided heat dissipation MOSFET power tubes for ingenious design. Not only can the PCB located below the double-sided heat dissipation MOSFET be used to transfer the heat generated by the MOSFET during operation, but the power inductor located closely above the double-sided heat dissipation MOSFET can also transfer the heat generated by the MOSFET during operation. This power supply design achieves multi-directional heat conduction, significantly reducing the temperature rise of the MOSFET power tube during operation, ensuring the design reliability of the main power components of the power supply, and allowing the MOSFET power tube to conduct a larger current, thereby improving the power density of the designed power supply without increasing the MOSFET package size. The design of the present invention arranges the main power inductor of each phase of the power supply above the corresponding double-sided heat dissipation MOSFET power tube in each phase. This design method of mounting the main power inductor on the top surface of the double-sided heat dissipation MOSFET utilizes the longitudinal space above the double-sided heat dissipation MOSFET power tube, saving board area on the PCB board while facilitating the rapid heat transfer of the double-sided heat dissipation MOSFET during operation, thereby improving the power density of the designed power supply. The present invention utilizes a dual-phase power supply control chip as the main circuit control chip. Combined with the double-sided heat dissipation MOSFET power tubes and corresponding main power inductors symmetrically distributed on the PCB board for each phase of the power supply, the design achieves dual-phase power output under the control of a single main power supply chip, reducing the number of power supply circuit components. The dual-phase power supply control chip is located in the center of the PCB board, and the main power circuits of the two-phase power supply are symmetrically distributed, separating the power supply control circuit portion from the main power circuit portions of each phase of the power supply. Heat is dispersed between the two phases, and operations do not interfere with each other, thereby improving the design reliability of each power supply circuit portion. This power supply design also makes the overall temperature distribution of the power supply more uniform, facilitates the heat dissipation of the dual-phase power supply, avoids temperature rise accumulation at the location of the power supply control circuit portion, and improves the design reliability of the power supply. In general, the power supply designed by the present invention utilizes double-sided heat dissipation MOSFET power tubes for multi-directional heat transfer, so that the operating temperature rise of the device is low and a larger current can be conducted. The power supply main control chip uses a dual-phase power supply control chip, and the circuit layout is symmetrically designed, which realizes dual-phase power supply voltage output while saving the number of power supply circuit components. The symmetrical distribution improves the reliability of the circuit design of each part of the power supply and is also conducive to the uniform distribution of the overall power supply temperature. In addition, the main power inductor in the power supply circuit is arranged above the double-sided heat dissipation MOSFET power tube, saving the board area of ​​the device on the PCB board. From the above aspects, the low temperature rise and integration of the power supply design are improved, and the design reliability and power density of the overall power supply are improved.

[0054] In the description of the present invention, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature specified as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.

[0055] Although the present invention is described herein in conjunction with various embodiments, those skilled in the art may understand and implement other variations of the disclosed embodiments by reviewing the specification and accompanying drawings in the process of implementing the claimed invention. In the specification, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude multiple components or steps. The fact that certain measures are described in different embodiments does not mean that these measures cannot be combined to produce good results.

[0056] The above is a further detailed description of the present invention in conjunction with specific preferred embodiments, and the specific implementation of the present invention should not be considered to be limited to these descriptions. For those skilled in the art of the present invention, without departing from the concept of the present invention, several simple deductions or substitutions can be made, which should be considered to fall within the scope of protection of the present invention.

Claims

1. A dual-phase high power density power supply based on double-sided heat dissipation MOSFET, characterized in that: The dual-phase high power density power supply comprises: Dual-phase power supply main control chip, used to generate control signals for each phase of the power supply; A first-phase power supply main power half-bridge circuit and a second-phase power supply main power half-bridge circuit are configured to generate an output voltage corresponding to each phase power supply according to the control signal; the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit are respectively designed based on a plurality of double-sided heat dissipation MOSFET power tubes and a main power inductor; The dual-phase power supply main control chip is arranged in the central area of ​​the back side of the PCB board, and the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit are symmetrically arranged at both end areas of the PCB board. The first-phase power supply main power half-bridge circuit includes a first upper tube circuit, a first lower tube circuit, and a first main power inductor, and the second-phase power supply main power half-bridge circuit includes a second upper tube circuit, a second lower tube circuit, and a second main power inductor. The first upper tube circuit, the second upper tube circuit, the first lower tube circuit, and the second lower tube circuit are respectively designed based on a plurality of double-sided heat dissipation MOSFET power tubes, and all the double-sided heat dissipation MOSFET power tubes constituting the first upper tube circuit and the second upper tube circuit are arranged on the front side of the PCB board, and all the double-sided heat dissipation MOSFET power tubes constituting the first lower tube circuit and the second lower tube circuit are arranged on the back side of the PCB board. The first main power inductor is arranged above all the double-sided heat dissipation MOSFET power tubes constituting the first upper tube circuit, and the second main power inductor is arranged above all the double-sided heat dissipation MOSFET power tubes constituting the second upper tube circuit. The longitudinal space above the first upper tube circuit and the second upper tube circuit is utilized, and no area of ​​the PCB board is occupied.

2. The dual-phase high power density power supply based on double-sided heat dissipation MOSFET according to claim 1, characterized in that: The dual-phase power supply main control chip includes six control signal output pins, three of which are used to control the switching states of all double-sided heat dissipation MOSFET power tubes in the first-phase power supply main power half-bridge circuit, and the other three control signal output pins are used to control the switching states of all double-sided heat dissipation MOSFET power tubes in the second-phase power supply main power half-bridge circuit.

3. The dual-phase high power density power supply based on double-sided heat dissipation MOSFET according to claim 2, characterized in that: The first-phase power supply main power half-bridge circuit includes a first double-sided heat dissipation MOSFET power tube, a second double-sided heat dissipation MOSFET power tube, a third double-sided heat dissipation MOSFET power tube, a fourth double-sided heat dissipation MOSFET power tube and a first main power inductor; wherein, The first double-sided heat dissipation MOSFET power tube and the second double-sided heat dissipation MOSFET power tube constitute the first upper tube circuit; the first double-sided heat dissipation MOSFET power tube and the second double-sided heat dissipation MOSFET power tube are arranged side by side on the front side of the PCB board; The third double-sided heat dissipation MOSFET power tube and the fourth double-sided heat dissipation MOSFET power tube constitute the first bottom tube circuit; the third double-sided heat dissipation MOSFET power tube and the fourth double-sided heat dissipation MOSFET power tube are arranged side by side on the back side of the PCB board; The first main power inductor is arranged above the first double-sided heat dissipation MOSFET power tube and the second double-sided heat dissipation MOSFET power tube.

4. The dual-phase high power density power supply based on double-sided heat dissipation MOSFET according to claim 3, characterized in that: In the main power half-bridge circuit of the first-phase power supply: The gate of the first double-sided heat dissipation MOSFET power tube and the gate of the second double-sided heat dissipation MOSFET power tube are both connected to the output pin of the first control signal of the dual-phase power supply main control chip, the drain of the first double-sided heat dissipation MOSFET power tube and the drain of the second double-sided heat dissipation MOSFET power tube are both connected to the input end of the input voltage, and the source of the first double-sided heat dissipation MOSFET power tube and the source of the second double-sided heat dissipation MOSFET power tube are both connected to the output pin of the third control signal of the dual-phase power supply main control chip; The gate of the third double-sided heat dissipation MOSFET power tube and the gate of the fourth double-sided heat dissipation MOSFET power tube are both connected to the output pin of the second control signal of the dual-phase power supply main control chip, the drain of the third double-sided heat dissipation MOSFET power tube and the drain of the fourth double-sided heat dissipation MOSFET power tube are both connected to the output pin of the third control signal of the dual-phase power supply main control chip, and the source of the third double-sided heat dissipation MOSFET power tube and the source of the fourth double-sided heat dissipation MOSFET power tube are both grounded; One end of the first main power inductor is connected to the output pin of the third control signal of the dual-phase power supply main control chip, and the other end of the first main power inductor serves as the output end of the first phase power supply.

5. The dual-phase high power density power supply based on double-sided heat dissipation MOSFET according to claim 2, characterized in that: The second-phase power supply main power half-bridge circuit includes a fifth double-sided heat dissipation MOSFET power tube, a sixth double-sided heat dissipation MOSFET power tube, a seventh double-sided heat dissipation MOSFET power tube, an eighth double-sided heat dissipation MOSFET power tube and a second main power inductor; wherein, The fifth double-sided heat dissipation MOSFET power tube and the sixth double-sided heat dissipation MOSFET power tube constitute the second upper tube circuit; the fifth double-sided heat dissipation MOSFET power tube and the sixth double-sided heat dissipation MOSFET power tube are arranged side by side on the front side of the PCB board; The seventh double-sided heat dissipation MOSFET power tube and the eighth double-sided heat dissipation MOSFET power tube constitute the second bottom tube circuit; the seventh double-sided heat dissipation MOSFET power tube and the eighth double-sided heat dissipation MOSFET power tube are arranged side by side on the back side of the PCB board; The second main power inductor is arranged above the fifth double-sided heat dissipation MOSFET power tube and the sixth double-sided heat dissipation MOSFET power tube.

6. The dual-phase high power density power supply based on double-sided heat dissipation MOSFET according to claim 5, characterized in that: In the second-phase power supply main power half-bridge circuit: The gate of the fifth double-sided heat dissipation MOSFET power tube and the gate of the sixth double-sided heat dissipation MOSFET power tube are both connected to the output pin of the fourth control signal of the dual-phase power supply main control chip, the drain of the fifth double-sided heat dissipation MOSFET power tube and the drain of the sixth double-sided heat dissipation MOSFET power tube are both connected to the input end of the input voltage, and the source of the fifth double-sided heat dissipation MOSFET power tube and the source of the sixth double-sided heat dissipation MOSFET power tube are both connected to the output pin of the sixth control signal of the dual-phase power supply main control chip; The gate of the seventh double-sided heat dissipation MOSFET power tube and the gate of the eighth double-sided heat dissipation MOSFET power tube are both connected to the output pin of the fifth control signal of the dual-phase power supply main control chip, the drain of the seventh double-sided heat dissipation MOSFET power tube and the drain of the eighth double-sided heat dissipation MOSFET power tube are both connected to the output pin of the sixth control signal of the dual-phase power supply main control chip, and the source of the seventh double-sided heat dissipation MOSFET power tube and the source of the eighth double-sided heat dissipation MOSFET power tube are both grounded; One end of the second main power inductor is connected to the output pin of the sixth control signal of the dual-phase power main control chip, and the other end of the second main power inductor serves as the output end of the second phase power supply.

7. The dual-phase high power density power supply based on double-sided heat dissipation MOSFET according to claim 1, characterized in that: All double-sided heat dissipation MOSFET power tubes in the first upper tube circuit, the second upper tube circuit, the first lower tube circuit, and the second lower tube circuit have a bottom heat dissipation pad and a top heat dissipation pad; wherein, The bottom heat dissipation pad of each double-sided heat dissipation MOSFET power tube in the first upper tube circuit is mounted on the PCB board, and the top heat dissipation pad is mounted on the first main power inductor; The bottom heat dissipation pad of each double-sided heat dissipation MOSFET power tube in the second upper tube circuit is mounted on the PCB board, and the top heat dissipation pad is mounted on the second main power inductor; The bottom heat dissipation pad of each double-sided heat dissipation MOSFET power tube in the first lower tube circuit and the second lower tube circuit is mounted on the PCB board, and the top heat dissipation pad is selectively mounted on the radiator according to heat dissipation requirements.

8. The dual-phase high power density power supply based on double-sided heat dissipation MOSFET according to claim 7, characterized in that: For all double-sided heat dissipation MOSFET power tubes in the first upper tube circuit, each top surface heat dissipation pad is attached to the first main power inductor via a thermally conductive material; For all double-sided heat dissipation MOSFET power tubes in the second upper tube circuit, each top surface heat dissipation pad is mounted to the second main power inductor via a thermally conductive material.

9. The dual-phase high power density power supply based on double-sided heat dissipation MOSFET according to claim 1, characterized in that: Heat sinks are mounted on the main power inductors in the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit.

10. The dual-phase high power density power supply based on double-sided heat dissipation MOSFET according to claim 1, characterized in that: The dual-phase high power density power supply is a symmetrical power supply with the same electrical specifications for each phase; wherein, The first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit are designed using the same power supply devices, the same circuit parameters, and the same layout; All double-sided heat dissipation MOSFET power tubes in the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit are double-sided heat dissipation MOSFETs of the same model and specification; The main power inductors in the first-phase power supply main power half-bridge circuit and the second-phase power supply main power half-bridge circuit both use power inductors of the same model and specification.

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