Method and system for reducing threshold voltage of MOS (Metal Oxide Semiconductor) tube

Abstract

The embodiment of the invention discloses a method and system for reducing the threshold voltage of an MOS transistor, and the method comprises the steps: determining the voltage data of a load module in a first time period, and obtaining a voltage data set; acquiring environment data in a first time period through an environment monitoring module to obtain an environment data set; determining a first working stability evaluation parameter and a first voltage mean value according to the voltage data set; determining a first adjustment parameter according to the first working stability evaluation parameter and the first voltage mean value; obtaining the current threshold voltage of the MOS tube; determining a first droppable threshold voltage according to the first adjustment parameter and the current threshold voltage; determining a threshold voltage range of the MOS tube corresponding to the environment data set, wherein the threshold voltage range comprises a lower limit threshold; determining a second droppable threshold voltage according to the lower limit threshold and the current threshold voltage; and determining a target threshold voltage according to the first droppable threshold voltage, the second droppable threshold voltage and the current threshold voltage.

Description

Technical Field

[0001] The present application relates to the field of computer technology or automatic control technology, and in particular to a method and system for reducing the threshold voltage of a MOS tube. Background Art

[0002] With the rapid development of electronic technology, intelligent power supplies have also been widely used. Currently, for power supply equipment, the main purpose of reducing the threshold voltage of MOS transistors is to improve the sensitivity and response speed of the device while reducing power consumption. However, it is not possible to intelligently reduce the threshold voltage of MOS transistors. Therefore, the problem of how to intelligently reduce the threshold voltage of MOS transistors needs to be solved urgently. Summary of the Invention

[0003] The embodiments of the present application provide a method and system for reducing the threshold voltage of a MOS tube, which can intelligently reduce the threshold voltage of the MOS tube.

[0004] In a first aspect, an embodiment of the present application provides a method for reducing a threshold voltage of a MOS transistor, which is applied to a smart power supply. The smart power supply includes a MOS transistor, a load module, and an environmental monitoring module. The method includes:

[0005] Determining voltage data of the load module in a first time period to obtain a voltage data set;

[0006] Acquire environmental data of the first time period through the environmental monitoring module to obtain an environmental data set;

[0007] determining a first operating stability evaluation parameter and a first voltage mean value according to the voltage data set;

[0008] determining a first adjustment parameter according to the first operating stability evaluation parameter and the first voltage average;

[0009] Obtaining the current threshold voltage of the MOS tube;

[0010] determining a first decreasing threshold voltage according to the first adjustment parameter and the current threshold voltage;

[0011] Determining a threshold voltage range of the MOS transistor corresponding to the environmental data set, where the threshold voltage range includes an upper threshold and a lower threshold; and the current threshold voltage is within the threshold voltage range;

[0012] determining a second descendable threshold voltage according to the lower threshold and the current threshold voltage;

[0013] A target threshold voltage is determined according to the first droppable threshold voltage, the second droppable threshold voltage, and the current threshold voltage.

[0014] Second aspect, an embodiment of the present application provides a system for reducing the threshold voltage of a MOS transistor, which is applied to an intelligent power supply. The intelligent power supply includes a MOS transistor, a load module, and an environment monitoring module. The system includes: a determination unit and an acquisition unit; wherein,

[0015] The determination unit is configured to determine voltage data of the load module in a first time period to obtain a voltage data set;

[0016] The acquisition unit is configured to obtain environment data of the first time period through the environment monitoring module to obtain an environment data set;

[0017] The determination unit is further configured to determine a first working stability evaluation parameter and a first voltage average value according to the voltage data set; determine a first adjustment parameter according to the first working stability evaluation parameter and the first voltage average value;

[0018] The acquisition unit is configured to obtain the current threshold voltage of the MOS transistor;

[0019] The determination unit is further configured to determine a first reducible threshold voltage according to the first adjustment parameter and the current threshold voltage; determine a threshold voltage range of the MOS transistor corresponding to the environment data set, the threshold voltage range includes an upper threshold and a lower threshold; the current threshold voltage is within the threshold voltage range; determine a second reducible threshold voltage according to the lower threshold and the current threshold voltage; determine a target threshold voltage according to the first reducible threshold voltage, the second reducible threshold voltage, and the current threshold voltage.

[0020] Third aspect, an embodiment of the present application provides a system for reducing the threshold voltage of a MOS transistor. The system for reducing the threshold voltage of a MOS transistor includes the device for reducing the threshold voltage of a MOS transistor as described in the second aspect.

[0021] Fourth aspect, an embodiment of the present application provides an intelligent power supply, including a processor, a memory, a communication interface, and one or more programs. Among them, the above one or more programs are stored in the above memory and are configured to be executed by the above processor. The above programs include instructions for executing the steps in the first aspect of the embodiments of the present application.

[0022] Fifth aspect, an embodiment of the present application provides a computer-readable storage medium. Among them, the above computer-readable storage medium stores a computer program for electronic data exchange. Among them, the above computer program enables a computer to execute some or all of the steps as described in the first aspect of the embodiments of the present application.

[0023] Sixth aspect, an embodiment of the present application provides a computer program product, where the computer program product includes a non-transitory computer-readable storage medium storing a computer program, and the computer program is operable to cause a computer to execute some or all of the steps described in the first aspect of the embodiment of the present application. The computer program product may be a software installation package.

[0024] Implementing the embodiments of the present application has the following beneficial effects:

[0025] It can be seen that the method and system for reducing the threshold voltage of a MOS transistor described in the embodiments of the present application are applied to an intelligent power supply. The intelligent power supply includes a MOS transistor, a load module, and an environment monitoring module. Determine the voltage data of the load module in the first time period to obtain a voltage data set, and obtain the environmental data of the first time period through the environment monitoring module to obtain an environmental data set; determine a first working stability evaluation parameter and a first voltage average value according to the voltage data set; determine a first adjustment parameter according to the first working stability evaluation parameter and the first voltage average value; obtain the current threshold voltage of the MOS transistor; determine a first droppable threshold voltage according to the first adjustment parameter and the current threshold voltage; determine the threshold voltage range of the MOS transistor corresponding to the environmental data set, and the threshold voltage range includes an upper threshold and a lower threshold; the current threshold voltage is within the threshold voltage range; determine a second droppable threshold voltage according to the lower threshold and the current threshold voltage; determine the target threshold voltage according to the first droppable threshold voltage, the second droppable threshold voltage, and the current threshold voltage. First, the first voltage average value reflects the power consumption situation and related resource requirements of the intelligent power supply, and the first working stability evaluation parameter reflects the stability situation of the intelligent power supply. The corresponding first adjustment parameter can be determined based on the stability situation of the intelligent power supply, the power consumption situation of the intelligent power supply, and related resource requirements, and then the first droppable threshold voltage can be determined according to the first adjustment parameter and the current threshold voltage, that is, the corresponding droppable threshold voltage can be determined while ensuring the stability required by the intelligent power supply, and the working stability of the intelligent power supply can be maintained. Second, the environmental data set reflects the environmental change situation to a certain extent, and the threshold voltage range of the MOS transistor can be set accordingly based on different environments. In this way, the compatibility between the intelligent power supply and the environment can be ensured, the stability of the intelligent power supply can be maintained, and the power consumption intelligence can be ensured. Third, the target threshold voltage is determined according to the first droppable threshold voltage, the second droppable threshold voltage, and the current threshold voltage. In this way, the working stability of the intelligent power supply can be ensured, the power consumption can be saved, and the actual working requirements can be met, thereby intelligently reducing the threshold voltage of the MOS transistor. Description of the Drawings

[0026] To more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the accompanying drawings required for the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.

[0027] Figure 1 is a schematic flowchart of a method for reducing the threshold voltage of a MOS transistor provided by an embodiment of the present application;

[0028] Figure 2 is a schematic structural diagram of an intelligent power supply provided by an embodiment of the present application;

[0029] Figure 3 is a schematic structural diagram of another intelligent power supply provided by an embodiment of the present application;

[0030] Figure 4 is a block diagram of the functional units of a system for reducing the threshold voltage of a MOS transistor provided by an embodiment of the present application. Detailed implementation manners

[0031] In order to enable those skilled in the art to better understand the solutions of the present application, the following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some embodiments of the present application, rather than all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present application.

[0032] The terms "first", "second", etc. in the specification and claims of the present application and the above accompanying drawings are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but optionally further includes steps or units not listed, or optionally further includes other steps or units inherent to these processes, methods, products, or devices.

[0033] Referring to "embodiment" herein means that a specific feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the present application. The phrase appears in various places in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0034] In the embodiments of the present application, the intelligent power supply involved may include various power supplies, such as switching power supplies, automotive power supplies, outdoor mobile power supplies, etc., which are not limited herein.

[0035] In the embodiments of the present application, the threshold voltage of the MOS transistor can be understood as the voltage required for the charges formed in the channel to exactly cancel out the electric field applied by the gate when the gate voltage is zero. Specifically, it can be regarded as the critical voltage value for the MOS transistor to transition from the cut-off state to the conducting state (or vice versa). In specific implementations, the magnitude of the threshold voltage has a significant impact on the performance of the device. Specifically, if the threshold voltage is too high, a larger voltage is required for the device to conduct, thereby reducing the sensitivity and response speed of the device; if the threshold voltage is too low, the leakage current of the device will be too large, reducing its reliability and lifespan.

[0036] For example, in the embodiments of the present application, the intelligent power supply may include a switching power supply, and the load module may include PWM control. In specific implementations, in the switching power supply, the MOS transistor can cooperate with the PWM controller by reducing the threshold voltage of the MOS transistor to achieve precise voltage regulation and overcurrent protection, ensuring the stability and reliability of the power supply system.

[0037] The embodiments of the present application will be introduced in detail below.

[0038] Please refer to Figure 1 , Figure 1 which is a schematic flowchart of a method for reducing the threshold voltage of a MOS transistor provided by the embodiments of the present application. As shown in the figure, it is applied to an intelligent power supply, and the intelligent power supply includes a MOS transistor, a load module, and an environment monitoring module. The method for reducing the threshold voltage of the MOS transistor includes:

[0039] 101. Determine the voltage data of the load module in the first time period to obtain a voltage data set.

[0040] In specific implementations, as Figure 2 shown, the intelligent power supply may include a MOS transistor, a load module, and an environment monitoring module. The load module can be understood as the module that needs to be powered, such as a controller, etc. The environment monitoring module can be used to collect environment data, and the environment data may include at least one of the following: environmental temperature, environmental humidity, magnetic field interference data, atmospheric pressure, etc., which are not limited herein. The environment monitoring module may include one or more environment sensors, and the environment sensors include at least one of the following: temperature sensor, humidity sensor, magnetic field detection sensor, atmospheric pressure sensor, etc., which are not limited herein. The MOS transistor, the load module, and the environment monitoring module are communicatively connected or electrically connected.

[0041] Among them, the first time period can be preset or the system default.

[0042] In a specific implementation, voltage data of the load module in the first time period can be collected at a first time interval to obtain a plurality of voltage data, and each voltage data can correspond to a collection moment. The first time interval can be preset or default in the system. The first time interval can be related to the working mode of the intelligent power supply. The plurality of voltage data can be used as a voltage data set.

[0043] 102. Obtain the environmental data in the first time period through the environmental monitoring module to obtain an environmental data set.

[0044] In a specific implementation, the environmental data in the first time period can be obtained through the environmental monitoring module at a second time interval to obtain a plurality of environmental data, and each environmental data corresponds to a collection moment. The second time interval can be preset or default in the system. The plurality of environmental data can be used as an environmental data set.

[0045] Among them, the first time interval and the second time interval can be the same or different.

[0046] 103. Determine a first working stability evaluation parameter and a first voltage mean value according to the voltage data set.

[0047] In a specific implementation, since the voltage data set reflects the working stability of the intelligent power supply to a certain extent. Specifically, since each voltage data can correspond to a collection moment, map the voltage data set to a coordinate system, where the horizontal axis of the coordinate system is time and the vertical axis is voltage data. Then, each voltage data and the corresponding collection moment can be regarded as a coordinate point. In this way, a plurality of coordinate points can be obtained. Based on these plurality of coordinate points, a fitting line is obtained, and the absolute value of the slope of the fitting line is determined to obtain a target absolute value. According to the mapping relationship between the preset absolute value and the working stability evaluation parameter, the first working stability evaluation parameter corresponding to the target absolute value can be determined based on this mapping relationship.

[0048] Correspondingly, the mean value of all voltage data in the voltage data set can also be determined to obtain a first voltage mean value. Of course, the line segment of the first time period in the fitting line can also be intercepted, and the first voltage mean value can be determined based on this line segment. Specifically, the midpoint of the line segment is determined, and the voltage data corresponding to this midpoint is the first voltage mean value.

[0049] 104. Determine a first adjustment parameter according to the first working stability evaluation parameter and the first voltage mean value.

[0050] Among them, the first voltage average value reflects the power consumption situation of the intelligent power supply and the related resource demand situation, and the first working stability evaluation parameter reflects the stability situation of the intelligent power supply. Furthermore, based on the stability situation of the intelligent power supply, the power consumption situation of the intelligent power supply, and the related resource demand situation, the corresponding first adjustment parameter can be determined, which can not only ensure the working stability of the intelligent power supply, but also save power consumption and meet the actual working requirements.

[0051] Optionally, for the above steps, determining the first adjustment parameter according to the first working stability evaluation parameter and the first voltage average value can be implemented as follows:

[0052] Determine the reference working stability evaluation parameter corresponding to the first voltage average value;

[0053] Determine the first difference between the first working stability evaluation parameter and the reference working stability evaluation parameter;

[0054] Determine the first adjustment parameter corresponding to the first difference, and the value range of the first adjustment parameter is between 0 and 1.

[0055] In specific implementation, since the first voltage average value reflects the power consumption situation of the intelligent power supply and the related resource demand situation, the mapping relationship between the preset voltage average value and the working stability evaluation parameter can be stored in advance. Furthermore, based on this mapping relationship, the reference working stability evaluation parameter can be determined.

[0056] Then, the first difference between the first working stability evaluation parameter and the reference working stability evaluation parameter can also be determined, that is, the first difference = the first working stability evaluation parameter - the reference working stability evaluation parameter. The mapping relationship between the preset difference and the adjustment parameter can also be stored in advance. Furthermore, based on this mapping relationship, the first adjustment parameter corresponding to the first difference can be determined, and the value range of the first adjustment parameter is between 0 and 1. In this way, based on the stability situation of the intelligent power supply, the power consumption situation of the intelligent power supply, and the related resource demand situation, the corresponding first adjustment parameter can be determined, which can not only ensure the working stability of the intelligent power supply, but also save power consumption and meet the actual working requirements.

[0057] Optionally, the following steps can also be included:

[0058] When the first working stability evaluation parameter is greater than the reference working stability evaluation parameter, execute the step of determining the first difference between the first working stability evaluation parameter and the reference working stability evaluation parameter.

[0059] Among them, when the first working stability evaluation parameter is greater than the reference working stability evaluation parameter, it indicates that the current working stability meets the working requirements of the intelligent power supply. Then, the step of determining the first difference between the first working stability evaluation parameter and the reference working stability evaluation parameter can be executed. Furthermore, it helps to determine the corresponding first adjustment parameter based on the stability situation of the intelligent power supply, the power consumption situation of the intelligent power supply, and the relevant resource requirement situation, which can not only ensure the working stability of the intelligent power supply, but also save power consumption and meet the actual working requirements.

[0060] Correspondingly, when the first working stability evaluation parameter is less than or equal to the reference working stability evaluation parameter, it indicates that the intelligent power supply is unstable. Then, the threshold voltage of the MOS transistor can be appropriately increased.

[0061] 105. Obtain the current threshold voltage of the MOS transistor.

[0062] In specific implementation, the threshold voltage situation of the MOS transistor can be monitored, and thus, the current threshold voltage of the MOS transistor can be obtained.

[0063] 106. Determine the first droppable threshold voltage according to the first adjustment parameter and the current threshold voltage.

[0064] In specific implementation, the first droppable threshold voltage can be determined according to the first adjustment parameter and the current threshold voltage, that is, the corresponding droppable threshold voltage can be determined while ensuring the stability required by the intelligent power supply, and the working stability of the intelligent power supply can be maintained.

[0065] Optionally, for the above step 106 of determining the first droppable threshold voltage according to the first adjustment parameter and the current threshold voltage, it can be implemented in the following manner:

[0066] Determine the first droppable threshold voltage according to the following formula: specifically, the first droppable threshold voltage = the first adjustment parameter * the current threshold voltage.

[0067] Among them, the value of the first adjustment parameter can be 0 to 1. For example, the value range of the first adjustment parameter is 0 to 0.2, and the value range of the first adjustment parameter can be related to the manufacturing process parameters of the MOS transistor and / or the packaging parameters.

[0068] 107. Determine the threshold voltage range of the MOS transistor corresponding to the environmental data set, where the threshold voltage range includes an upper threshold and a lower threshold; the current threshold voltage is within the threshold voltage range.

[0069] In specific implementation, the environmental data set reflects the environmental changes to a certain extent. For example, environmental stability, degree of environmental impact, etc. The threshold voltage range of the MOS transistor can be set accordingly based on different environments. In this way, the compatibility between the intelligent power supply and the environment can be ensured, and the stability of the intelligent power supply and the intelligence of power consumption can also be maintained.

[0070] In specific implementation, the threshold voltage range of the MOS transistor corresponding to the environmental data set can be determined. The threshold voltage range includes an upper threshold and a lower threshold, and the lower threshold is less than the upper threshold. If the current threshold voltage is within the threshold voltage range, it indicates that the intelligent power supply is operating stably.

[0071] Optionally, step 107 above, determining the threshold voltage range of the MOS transistor corresponding to the environmental data set, can be implemented as follows:

[0072] Determine a first fitting straight line and a first fitting curve segment of the first time period according to the environmental data set;

[0073] Determine the absolute value of the slope of the first fitting straight line to obtain a first absolute value;

[0074] Determine the first standard deviation and the first mean of the first fitting curve segment;

[0075] Determine a first fluctuation parameter corresponding to the first absolute value;

[0076] Determine a second fluctuation parameter corresponding to the first standard deviation;

[0077] Determine a reference threshold voltage range corresponding to the first mean. The reference threshold voltage range includes a reference upper threshold and a reference lower threshold;

[0078] Determine the upper threshold according to the first fluctuation parameter and the reference upper threshold;

[0079] Determine the lower threshold according to the second fluctuation parameter and the reference lower threshold.

[0080] In specific implementation, since each environmental data corresponds to a collection moment, the environmental data set can be mapped to a coordinate system. The horizontal axis of this coordinate system is time, and the vertical axis is environmental data. Regarding each environmental data and the corresponding collection moment as a coordinate point, in this way, multiple coordinate points can be obtained. Based on these multiple coordinate points for fitting, a first fitting straight line and a first fitting curve segment of the first time period are obtained.

[0081] Next, the absolute value of the slope of the first fitted straight line can be determined to obtain a first absolute value. Correspondingly, the standard deviation operation can be performed on the first fitted curve segment to obtain a first standard deviation, and each voltage data and the corresponding acquisition time can be regarded as a coordinate point. In this way, multiple coordinate points can be obtained, and the mean value, that is, the first mean value, can be obtained. The first mean value reflects the overall environmental situation in the first time period.

[0082] In specific implementation, the mapping relationship between the preset absolute value and the fluctuation parameter can be prestored. The value range of the fluctuation parameter can be preset or the system default. The fluctuation parameter is related to the performance of the MOS transistor and the performance of the intelligent power supply. For example, the value range of the fluctuation parameter can be 0 to 0.12. Furthermore, the first fluctuation parameter corresponding to the first absolute value can be determined based on this mapping relationship. The first fluctuation parameter reflects the change situation of the future environmental stability to a certain extent.

[0083] Correspondingly, the mapping relationship between the preset standard deviation and the fluctuation parameter can also be prestored. The value range of the fluctuation parameter can be preset or the system default. The fluctuation parameter is related to the performance of the MOS transistor and the performance of the intelligent power supply. For example, the value range of the fluctuation parameter can be 0 to 0.12. Furthermore, the second fluctuation parameter corresponding to the first standard deviation can be determined based on this mapping relationship. The second fluctuation parameter reflects the change situation of the environmental stability within the first time period to a certain extent.

[0084] In specific implementation, the mapping relationship between the preset mean value and the threshold voltage range can be prestored. Furthermore, the reference threshold voltage range corresponding to the first mean value can be determined based on this mapping relationship. In this way, the threshold voltage range corresponding to the overall environmental situation in the first time period can be obtained, so that the threshold voltage range deeply conforms to the actual environmental situation.

[0085] Among them, the reference threshold voltage range can include a reference upper threshold and a reference lower threshold, and the reference lower threshold is less than the reference upper threshold.

[0086] Specifically, the upper limit threshold can be determined according to the first fluctuation parameter and the reference upper limit threshold, that is, upper limit threshold = (1 - first fluctuation parameter) * reference upper limit threshold. The first fluctuation parameter reflects the change in future environmental stability to a certain extent (not limited to the first time period), and reducing the upper limit threshold can better maintain the stability of the intelligent power supply and its environmental adaptability. Correspondingly, the lower limit threshold can be determined according to the second fluctuation parameter and the reference lower limit threshold, that is, lower limit threshold = (1 + second fluctuation parameter) * reference lower limit threshold. The second fluctuation parameter reflects the change in environmental stability within the first time period to a certain extent, and increasing the lower limit threshold can better maintain the stability of the intelligent power supply and its environmental adaptability. In this way, the compatibility between the intelligent power supply and the environment can be ensured, and the stability of the intelligent power supply can be maintained while ensuring power consumption intelligence.

[0087] 108. Determine the second voltage that can be decreased according to the lower limit threshold and the current threshold voltage.

[0088] In a specific implementation, the second voltage that can be decreased = current threshold voltage - lower limit threshold.

[0089] 109. Determine the target threshold voltage according to the first voltage that can be decreased, the second voltage that can be decreased, and the current threshold voltage.

[0090] In a specific implementation, the target threshold voltage can be determined according to the first voltage that can be decreased, the second voltage that can be decreased, and the current threshold voltage. In this way, the working stability of the intelligent power supply can be ensured, power consumption can be saved, and the actual working requirements can also be met.

[0091] Optionally, in step 109 above, determining the target threshold voltage according to the first voltage that can be decreased, the second voltage that can be decreased, and the current threshold voltage includes:

[0092] Determine the smaller value of the first voltage that can be decreased and the second voltage that can be decreased;

[0093] Determine the target threshold voltage according to the smaller value and the current threshold voltage.

[0094] In a specific implementation, the smaller value of the first voltage that can be decreased and the second voltage that can be decreased can be determined, and then the target threshold voltage can be determined according to the smaller value and the current threshold voltage, that is, target threshold voltage = current threshold voltage - smaller value. In this way, the working stability of the intelligent power supply can be ensured, power consumption can be saved, and the actual working requirements can also be met.

[0095] It can be seen that the method for reducing the threshold voltage of the MOS transistor described in the embodiments of the present application is applied to an intelligent power supply. The intelligent power supply includes a MOS transistor, a load module, and an environment monitoring module. Determine the voltage data of the load module in the first time period to obtain a voltage data set, and obtain the environment data of the first time period through the environment monitoring module to obtain an environment data set; determine the first working stability evaluation parameter and the first voltage average value according to the voltage data set; determine the first adjustment parameter according to the first working stability evaluation parameter and the first voltage average value; obtain the current threshold voltage of the MOS transistor; determine the first droppable threshold voltage according to the first adjustment parameter and the current threshold voltage; determine the threshold voltage range of the MOS transistor corresponding to the environment data set, and the threshold voltage range includes an upper threshold and a lower threshold; the current threshold voltage is within the threshold voltage range; determine the second droppable threshold voltage according to the lower threshold and the current threshold voltage; determine the target threshold voltage according to the first droppable threshold voltage, the second droppable threshold voltage, and the current threshold voltage. First, the first voltage average value reflects the power consumption situation and related resource demand situation of the intelligent power supply, and the first working stability evaluation parameter reflects the stability situation of the intelligent power supply. The corresponding first adjustment parameter can be determined based on the stability situation of the intelligent power supply, the power consumption situation of the intelligent power supply, and the related resource demand situation, and then the first droppable threshold voltage is determined according to the first adjustment parameter and the current threshold voltage. That is, the corresponding droppable threshold voltage can be determined while ensuring the stability required by the intelligent power supply, and the working stability of the intelligent power supply can be maintained. Second, the environment data set reflects the environmental change situation to a certain extent, and the threshold voltage range of the MOS transistor can be set accordingly based on different environments. In this way, the compatibility between the intelligent power supply and the environment can be ensured, the stability of the intelligent power supply can be maintained, and the power consumption intelligence can be ensured. Third, the target threshold voltage is determined according to the first droppable threshold voltage, the second droppable threshold voltage, and the current threshold voltage. In this way, the working stability of the intelligent power supply can be ensured, the power consumption can be saved, and the actual working requirements can be met. Thus, the threshold voltage of the MOS transistor is intelligently reduced.

[0096] Consistent with the above embodiments, please refer to Figure 3 , Figure 3 is a schematic structural diagram of another intelligent power supply provided by the embodiments of the present application. As shown in the figure, the intelligent power supply includes a processor, a memory, a communication interface, and one or more programs. The above one or more programs are stored in the above memory and are configured to be executed by the above processor. In the embodiments of the present application, the intelligent power supply includes a MOS transistor, a load module, and an environment monitoring module. The above programs include instructions for performing the following steps:

[0097] Determine the voltage data of the load module in the first time period to obtain a voltage data set;

[0098] Obtain the environmental data of the first time period through the environmental monitoring module to obtain an environmental data set;

[0099] Determine a first working stability evaluation parameter and a first voltage average value according to the voltage data set;

[0100] Determine a first adjustment parameter according to the first working stability evaluation parameter and the first voltage average value;

[0101] Obtain the current threshold voltage of the MOS transistor;

[0102] Determine a first droppable threshold voltage according to the first adjustment parameter and the current threshold voltage;

[0103] Determine the threshold voltage range of the MOS transistor corresponding to the environmental data set, the threshold voltage range includes an upper threshold and a lower threshold; the current threshold voltage is within the threshold voltage range;

[0104] Determine a second droppable threshold voltage according to the lower threshold and the current threshold voltage;

[0105] Determine a target threshold voltage according to the first droppable threshold voltage, the second droppable threshold voltage and the current threshold voltage.

[0106] Optionally, in terms of determining the first adjustment parameter according to the first working stability evaluation parameter and the first voltage average value, the above program includes instructions for performing the following steps:

[0107] Determine a reference working stability evaluation parameter corresponding to the first voltage average value;

[0108] Determine a first difference between the first working stability evaluation parameter and the reference working stability evaluation parameter;

[0109] Determine the first adjustment parameter corresponding to the first difference, and the value range of the first adjustment parameter is between 0 and 1.

[0110] Optionally, the above program further includes instructions for performing the following steps:

[0111] When the first working stability evaluation parameter is greater than the reference working stability evaluation parameter, execute the step of determining the first difference between the first working stability evaluation parameter and the reference working stability evaluation parameter.

[0112] Optionally, in terms of determining the first droppable threshold voltage according to the first adjustment parameter and the current threshold voltage, the above program includes instructions for performing the following steps:

[0113] The first droppable threshold voltage is determined according to the following formula: First droppable threshold voltage = First adjustment parameter * Current threshold voltage.

[0114] Optionally, in the aspect of determining the threshold voltage range of the MOS transistor corresponding to the environmental data set, where the threshold voltage range includes an upper threshold and a lower threshold, the above program includes instructions for performing the following steps:

[0115] Determine a first fitting straight line and a first fitting curve segment of the first time period according to the environmental data set;

[0116] Determine the absolute value of the slope of the first fitting straight line to obtain a first absolute value;

[0117] Determine the first standard deviation and the first mean of the first fitting curve segment;

[0118] Determine a first fluctuation parameter corresponding to the first absolute value;

[0119] Determine a second fluctuation parameter corresponding to the first standard deviation;

[0120] Determine a reference threshold voltage range corresponding to the first mean, where the reference threshold voltage range includes a reference upper threshold and a reference lower threshold;

[0121] Determine the upper threshold according to the first fluctuation parameter and the reference upper threshold;

[0122] Determine the lower threshold according to the second fluctuation parameter and the reference lower threshold.

[0123] Optionally, in the aspect of determining the target threshold voltage according to the first droppable threshold voltage, the second droppable threshold voltage, and the current threshold voltage, the above program includes instructions for performing the following steps:

[0124] Determine the smaller value of the first droppable threshold voltage and the second droppable threshold voltage;

[0125] Determine the target threshold voltage according to the smaller value and the current threshold voltage.

[0126] It can be seen that for the intelligent power supply described in the embodiments of the present application, the intelligent power supply includes a MOS transistor, a load module, and an environmental monitoring module. Determine the voltage data of the load module in the first time period to obtain a voltage data set, and obtain the environmental data of the first time period through the environmental monitoring module to obtain an environmental data set; determine the first working stability evaluation parameter and the first voltage average value according to the voltage data set; determine the first adjustment parameter according to the first working stability evaluation parameter and the first voltage average value; obtain the current threshold voltage of the MOS transistor; determine the first droppable threshold voltage according to the first adjustment parameter and the current threshold voltage; determine the threshold voltage range of the MOS transistor corresponding to the environmental data set, and the threshold voltage range includes an upper threshold and a lower threshold; the current threshold voltage is within the threshold voltage range; determine the second droppable threshold voltage according to the lower threshold and the current threshold voltage; determine the target threshold voltage according to the first droppable threshold voltage, the second droppable threshold voltage, and the current threshold voltage. First, the first voltage average value reflects the power consumption situation and related resource demand situation of the intelligent power supply, and the first working stability evaluation parameter reflects the stability situation of the intelligent power supply. The corresponding first adjustment parameter can be determined based on the stability situation of the intelligent power supply, the power consumption situation of the intelligent power supply, and the related resource demand situation, and then the first droppable threshold voltage is determined according to the first adjustment parameter and the current threshold voltage. That is, the corresponding droppable threshold voltage can be determined while ensuring the stability required by the intelligent power supply, and the working stability of the intelligent power supply can be maintained. Second, the environmental data set reflects the environmental change situation to a certain extent, and the threshold voltage range of the MOS transistor can be set accordingly based on different environments. In this way, the compatibility between the intelligent power supply and the environment can be ensured, the stability of the intelligent power supply can be maintained, and the power consumption intelligence can be ensured. Third, the target threshold voltage is determined according to the first droppable threshold voltage, the second droppable threshold voltage, and the current threshold voltage. In this way, the working stability of the intelligent power supply can be ensured, the power consumption can be saved, and the actual working requirements can be met. Thus, the threshold voltage of the MOS transistor is intelligently reduced.

[0127] Figure 4 It is a functional unit composition block diagram of a system 400 for reducing the threshold voltage of a MOS transistor involved in the embodiments of the present application. The system 400 for reducing the threshold voltage of a MOS transistor is applied to an intelligent power supply. The intelligent power supply includes a MOS transistor, a load module, and an environmental monitoring module. The system 400 for reducing the threshold voltage of a MOS transistor includes: a determination unit 401 and an acquisition unit 402; wherein,

[0128] The determination unit 401 is configured to determine the voltage data of the load module in the first time period to obtain a voltage data set;

[0129] The acquisition unit 402 is configured to obtain the environmental data of the first time period through the environmental monitoring module to obtain an environmental data set;

[0130] The determining unit 401 is further configured to determine a first working stability evaluation parameter and a first voltage average value according to the voltage data set; determine a first adjustment parameter according to the first working stability evaluation parameter and the first voltage average value;

[0131] The obtaining unit 402 is configured to obtain the current threshold voltage of the MOS transistor;

[0132] The determining unit 401 is further configured to determine a first droppable threshold voltage according to the first adjustment parameter and the current threshold voltage; determine the threshold voltage range of the MOS transistor corresponding to the environment data set, where the threshold voltage range includes an upper threshold and a lower threshold; the current threshold voltage is within the threshold voltage range; determine a second droppable threshold voltage according to the lower threshold and the current threshold voltage; determine a target threshold voltage according to the first droppable threshold voltage, the second droppable threshold voltage, and the current threshold voltage.

[0133] Optionally, in terms of determining the first adjustment parameter according to the first working stability evaluation parameter and the first voltage average value, the determining unit 401 is specifically configured to:

[0134] Determine a reference working stability evaluation parameter corresponding to the first voltage average value;

[0135] Determine a first difference between the first working stability evaluation parameter and the reference working stability evaluation parameter;

[0136] Determine the first adjustment parameter corresponding to the first difference, where the value range of the first adjustment parameter is between 0 and 1.

[0137] Optionally, the system 400 for reducing the threshold voltage of the MOS transistor is further specifically configured to:

[0138] When the first working stability evaluation parameter is greater than the reference working stability evaluation parameter, perform the step of determining the first difference between the first working stability evaluation parameter and the reference working stability evaluation parameter.

[0139] Optionally, in terms of determining the first droppable threshold voltage according to the first adjustment parameter and the current threshold voltage, the determining unit 401 is specifically configured to:

[0140] Determine the first droppable threshold voltage according to the following formula, specifically: First droppable threshold voltage = First adjustment parameter * Current threshold voltage.

[0141] Optionally, in determining the threshold voltage range of the MOS transistor corresponding to the environmental data set, where the threshold voltage range includes an upper threshold and a lower threshold, the determining unit 401 is specifically configured to:

[0142] Determine a first fitting straight line and a first fitting curve segment of the first time period according to the environmental data set;

[0143] Determine the absolute value of the slope of the first fitting straight line to obtain a first absolute value;

[0144] Determine a first standard deviation and a first mean of the first fitting curve segment;

[0145] Determine a first fluctuation parameter corresponding to the first absolute value;

[0146] Determine a second fluctuation parameter corresponding to the first standard deviation;

[0147] Determine a reference threshold voltage range corresponding to the first mean, where the reference threshold voltage range includes a reference upper threshold and a reference lower threshold;

[0148] Determine the upper threshold according to the first fluctuation parameter and the reference upper threshold;

[0149] Determine the lower threshold according to the second fluctuation parameter and the reference lower threshold.

[0150] Optionally, in determining the target threshold voltage according to the first droppable threshold voltage, the second droppable threshold voltage, and the current threshold voltage, the determining unit 401 is specifically configured to:

[0151] Determine the smaller value of the first droppable threshold voltage and the second droppable threshold voltage;

[0152] Determine the target threshold voltage according to the smaller value and the current threshold voltage.

[0153] It can be seen that the system for reducing the threshold voltage of the MOS transistor described in the embodiments of the present application is applied to an intelligent power supply. The intelligent power supply includes a MOS transistor, a load module, and an environmental monitoring module. The voltage data of the load module in the first time period is determined to obtain a voltage data set, and the environmental data in the first time period is obtained through the environmental monitoring module to obtain an environmental data set; the first working stability evaluation parameter and the first voltage mean value are determined according to the voltage data set; the first adjustment parameter is determined according to the first working stability evaluation parameter and the first voltage mean value; the current threshold voltage of the MOS transistor is obtained; the first adjustable threshold voltage is determined according to the first adjustment parameter and the current threshold voltage; the threshold voltage range of the MOS transistor corresponding to the environmental data set is determined, and the threshold voltage range includes an upper threshold and a lower threshold; the current threshold voltage is within the threshold voltage range; the second adjustable threshold voltage is determined according to the lower threshold and the current threshold voltage; the target threshold voltage is determined according to the first adjustable threshold voltage, the second adjustable threshold voltage, and the current threshold voltage. First, the first voltage mean value reflects the power consumption situation and related resource demand situation of the intelligent power supply, and the first working stability evaluation parameter reflects the stability situation of the intelligent power supply. The corresponding first adjustment parameter can be determined based on the stability situation of the intelligent power supply, the power consumption situation of the intelligent power supply, and the related resource demand situation, and then the first adjustable threshold voltage is determined according to the first adjustment parameter and the current threshold voltage. That is, the corresponding adjustable threshold voltage can be determined while ensuring the stability required by the intelligent power supply, and the working stability of the intelligent power supply can be maintained. Second, the environmental data set reflects the environmental change situation to a certain extent, and the threshold voltage range of the MOS transistor can be set accordingly based on different environments. In this way, the compatibility between the intelligent power supply and the environment can be ensured, the stability of the intelligent power supply can be maintained, and the power consumption intelligence can be ensured. Third, the target threshold voltage is determined according to the first adjustable threshold voltage, the second adjustable threshold voltage, and the current threshold voltage. In this way, the working stability of the intelligent power supply can be ensured, the power consumption can be saved, and the actual working requirements can be met. Thus, the threshold voltage of the MOS transistor is intelligently reduced.

[0154] It can be understood that the functions of the program modules of the system for reducing the threshold voltage of the MOS transistor in this embodiment can be specifically implemented according to the methods in the above method embodiments, and the specific implementation process can refer to the relevant descriptions of the above method embodiments, which will not be elaborated here.

[0155] The embodiments of the present application further provide a computer storage medium. The computer storage medium stores a computer program for electronic data exchange, and the computer program enables a computer to execute some or all of the steps of any method recorded in the above method embodiments.

[0156] The embodiments of the present application also provide a computer program product. The computer program product includes a non-transitory computer-readable storage medium storing a computer program. The computer program is operable to cause a computer to execute some or all of the steps of any of the methods described in the foregoing method embodiments. The computer program product may be a software installation package.

[0157] It should be noted that, for the foregoing method embodiments, for the sake of simple description, they are all expressed as a series of action combinations. However, those skilled in the art should understand that the present application is not limited by the described action sequence, because according to the present application, certain steps may be performed in other sequences or simultaneously. Secondly, those skilled in the art should also understand that the embodiments described in the specification are all preferred embodiments, and the actions and modules involved are not necessarily essential to the present application.

[0158] In the above embodiments, the descriptions of the respective embodiments have their own emphases. For the parts not detailed in a certain embodiment, reference may be made to the relevant descriptions of other embodiments.

[0159] In several embodiments provided by the present application, it should be understood that the disclosed device can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the above division of units is only a logical function division. In actual implementation, there may be other division methods. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the displayed or discussed coupling or direct coupling or communication connection to each other can be through some interfaces. The indirect coupling or communication connection of the device or unit can be in an electrical or other form.

[0160] The units described as separate components may or may not be physically separated. The components displayed as units may or may not be physical units, that is, they may be located in one place, or may be distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0161] In addition, the functional units in the respective embodiments of the present application may be integrated in a processing unit, or each unit may exist physically alone, or two or more units may be integrated in one unit. The above integrated unit can be implemented in the form of hardware or in the form of a software functional unit.

[0162] If the above-integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable memory. Based on such an understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of this technical solution, can be embodied in the form of a software product. This computer software product is stored in a memory and includes several instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the above methods in various embodiments of this application. The aforementioned memory includes various media that can store program codes, such as USB flash drives, read-only memories (ROM, Read-Only Memory), random access memories (RAM, Random Access Memory), mobile hard disks, magnetic disks, or optical discs.

[0163] Those of ordinary skill in the art can understand that all or part of the steps in the various methods of the above embodiments can be completed by instructing relevant hardware through a program. This program can be stored in a computer-readable memory, and the memory can include: flash drives, read-only memories (English: Read-Only Memory, abbreviated as: ROM), random access memories (English: Random Access Memory, abbreviated as: RAM), magnetic disks, or optical discs, etc.

[0164] The above has introduced the embodiments of this application in detail. Specific examples are used in this article to elaborate on the principle and implementation manner of this application. The description of the above embodiments is only used to help understand the method and its core idea of this application; at the same time, for those of ordinary skill in the art, according to the idea of this application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to this application.

Claims

1. A method for reducing the threshold voltage of a MOS transistor, characterized in that, Applied to an intelligent power supply, the intelligent power supply includes a MOS transistor, a load module, and an environment monitoring module, and the method includes: Determine the voltage data of the load module in the first time period to obtain a voltage data set; Obtain the environment data of the first time period through the environment monitoring module to obtain an environment data set; Determine a first working stability evaluation parameter and a first voltage mean value according to the voltage data set; Determine a first adjustment parameter according to the first working stability evaluation parameter and the first voltage mean value; Obtain the current threshold voltage of the MOS transistor; Determine a first droppable threshold voltage according to the first adjustment parameter and the current threshold voltage; Determine the threshold voltage range of the MOS transistor corresponding to the environment data set, the threshold voltage range includes an upper threshold and a lower threshold; the current threshold voltage is within the threshold voltage range; Determine a second droppable threshold voltage according to the lower threshold and the current threshold voltage; Determine a target threshold voltage according to the first droppable threshold voltage, the second droppable threshold voltage, and the current threshold voltage.

2. The method according to claim 1, characterized in that The determining the first adjustment parameter according to the first working stability evaluation parameter and the first voltage mean value includes: Determine a reference working stability evaluation parameter corresponding to the first voltage mean value; Determine a first difference between the first working stability evaluation parameter and the reference working stability evaluation parameter; Determine the first adjustment parameter corresponding to the first difference, and the value range of the first adjustment parameter is between 0 and 1.

3. The method according to claim 2, wherein The method further includes: When the first working stability evaluation parameter is greater than the reference working stability evaluation parameter, execute the step of determining the first difference between the first working stability evaluation parameter and the reference working stability evaluation parameter.

4. The method according to claim 2 or 3, characterized in that, The determining the first droppable threshold voltage according to the first adjustment parameter and the current threshold voltage includes: Determine the first droppable threshold voltage according to the following formula, specifically: First droppable threshold voltage = First adjustment parameter * Current threshold voltage.

5. The method according to any one of claims 1 to 3, characterized in that, The determining the threshold voltage range of the MOS transistor corresponding to the environment data set, the threshold voltage range includes an upper threshold and a lower threshold, includes: Determine a first fitting straight line and a first fitting curve segment of the first time period according to the environment data set; Determine the absolute value of the slope of the first fitting straight line to obtain a first absolute value; Determine the first standard deviation and the first mean value of the first fitting curve segment; Determine a first fluctuation parameter corresponding to the first absolute value; Determine a second fluctuation parameter corresponding to the first standard deviation; Determine a reference threshold voltage range corresponding to the first mean value, the reference threshold voltage range includes a reference upper threshold and a reference lower threshold; Determine the upper threshold according to the first fluctuation parameter and the reference upper threshold; Determine the lower threshold according to the second fluctuation parameter and the reference lower threshold.

6. The method according to any one of claims 1 to 3, characterized in that The determining the target threshold voltage according to the first droppable threshold voltage, the second droppable threshold voltage, and the current threshold voltage includes: Determine the smaller value of the first droppable threshold voltage and the second droppable threshold voltage; Determine the target threshold voltage according to the smaller value and the current threshold voltage.

7. A system for reducing the threshold voltage of a MOS transistor, characterized in that, Applied to an intelligent power supply, the intelligent power supply includes a MOS transistor, a load module, and an environment monitoring module, and the system includes: a determination unit and an acquisition unit; wherein, The determination unit is configured to determine voltage data of the load module in a first time period to obtain a voltage data set; The acquisition unit is configured to obtain environment data of the first time period through the environment monitoring module to obtain an environment data set; The determination unit is further configured to determine a first working stability evaluation parameter and a first voltage average value according to the voltage data set; determine a first adjustment parameter according to the first working stability evaluation parameter and the first voltage average value; The acquisition unit is configured to acquire the current threshold voltage of the MOS transistor; The determination unit is further configured to determine a first droppable threshold voltage according to the first adjustment parameter and the current threshold voltage; determine a threshold voltage range of the MOS transistor corresponding to the environment data set, the threshold voltage range includes an upper threshold and a lower threshold; the current threshold voltage is within the threshold voltage range; determine a second droppable threshold voltage according to the lower threshold and the current threshold voltage; determine the target threshold voltage according to the first droppable threshold voltage, the second droppable threshold voltage, and the current threshold voltage.

8. The system according to claim 7, characterized in that, In terms of determining the first adjustment parameter according to the first working stability evaluation parameter and the first voltage average value, the determination unit specifically is configured to: Determine a reference working stability evaluation parameter corresponding to the first voltage average value; Determine a first difference between the first working stability evaluation parameter and the reference working stability evaluation parameter; Determine the first adjustment parameter corresponding to the first difference, and the value range of the first adjustment parameter is between 0 and 1.

9. The system according to claim 8, wherein The system is further specifically configured to: When the first working stability evaluation parameter is greater than the reference working stability evaluation parameter, execute the step of determining the first difference between the first working stability evaluation parameter and the reference working stability evaluation parameter.

10. The system according to claim 8 or 9, characterized in that, In terms of determining the first droppable threshold voltage according to the first adjustment parameter and the current threshold voltage, the determination unit specifically is configured to: Determine the first droppable threshold voltage according to the following formula, specifically: First droppable threshold voltage = First adjustment parameter * Current threshold voltage.

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