Substrate processing method and substrate processing apparatus

Abstract

In a fully closed state in which the plurality of first chuck pins and the plurality of second chuck pins are in contact with an end surface of a horizontal substrate, supply of a sulfuric acid-containing liquid having a temperature higher than that of the substrate to the substrate is started and continued. The sulfuric acid-containing liquid is supplied to the substrate in a first closed state in which the plurality of first chuck pins are in contact with the end surface of the substrate and the plurality of second chuck pins are separated from the end surface of the substrate by separating the plurality of second chuck pins from the end surface of the substrate. The sulfuric acid-containing liquid is supplied to the substrate in a fully closed state by bringing the plurality of second chuck pins into contact with the end surface of the substrate. The sulfuric acid-containing liquid is supplied to the substrate in a second closed state in which the plurality of first chuck pins are separated from the end surface of the substrate and the plurality of second chuck pins are in contact with the end surface of the substrate by separating the plurality of first chuck pins from the end surface of the substrate.

Description

[0001] Related Application

[0002] This application claims priority based on Japanese Patent Application No. 2022-210950 filed on December 27, 2022, the entire content of which is incorporated herein by reference. Technical Field

[0003] The present invention relates to a substrate processing method and a substrate processing apparatus for processing a substrate. The substrate includes, for example, substrates for FPD (Flat Panel Display) such as semiconductor wafers, liquid crystal display devices, or organic EL (electroluminescence) display devices, substrates for optical discs, substrates for magnetic discs, substrates for magneto-optical discs, substrates for photomasks, ceramic substrates, substrates for solar cells, and the like. Background Art

[0004] Patent Document 1 discloses changing the number of holding members that are in contact with the end face of a substrate while supplying an etching liquid to the substrate. The supply of the etching liquid to the substrate starts in a state where the substrate is held by a first holding member group including at least two holding members and the substrate is rotating. Then, while the substrate is held by the first holding member group, a second holding member group including at least two holding members holds the substrate. Then, while the substrate is held by the second holding member group, the first holding member group is separated from the substrate.

[0005] Prior Art Documents

[0006] Patent Documents

[0007] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2004-111902 Summary of the Invention

[0008] Problems to be Solved by the Invention

[0009] Embodiments of the present invention provide a new substrate processing method and a substrate processing apparatus capable of supplying a sulfuric acid-containing liquid having a temperature higher than that of the substrate to the entire area of the end face of the substrate.

[0010] Technical Means for Solving the Problems

[0011] One embodiment of the present invention provides a substrate processing method, which includes: a first splitting step of, in a fully closed state where a plurality of first chuck pins and a plurality of second chuck pins are in contact with the end face of a horizontal substrate, while rotating the substrate, starting and continuously supplying a sulfuric acid-containing liquid having a temperature higher than that of the substrate to the substrate; a second splitting step of, by separating the plurality of second chuck pins from the end face of the substrate, in a first closed state where the plurality of first chuck pins are in contact with the end face of the substrate and the plurality of second chuck pins are separated from the end face of the substrate, while rotating the substrate, supplying the sulfuric acid-containing liquid to the substrate; a third splitting step of, by bringing the plurality of second chuck pins into contact with the end face of the substrate, in the fully closed state, while rotating the substrate, supplying the sulfuric acid-containing liquid to the substrate; and a fourth splitting step of, by separating the plurality of first chuck pins from the end face of the substrate, in a second closed state where the plurality of first chuck pins are separated from the end face of the substrate and the plurality of second chuck pins are in contact with the end face of the substrate, while rotating the substrate, supplying the sulfuric acid-containing liquid to the substrate.

[0012] According to this method, in a state where at least one of the plurality of first chuck pins and the plurality of second chuck pins is in contact with the end face of a horizontal substrate, while rotating the substrate, a sulfuric acid-containing liquid is supplied to the substrate. Specifically, in a fully closed state where the plurality of first chuck pins and the plurality of second chuck pins are in contact with the end face of the substrate, the supply of the sulfuric acid-containing liquid to the substrate is started. Then, the plurality of first chuck pins and the plurality of second chuck pins are switched to a first closed state where the plurality of first chuck pins are in contact with the end face of the substrate and the plurality of second chuck pins are separated from the end face of the substrate. Then, the plurality of first chuck pins and the plurality of second chuck pins are switched to the first closed state. Then, the plurality of first chuck pins and the plurality of second chuck pins are switched to a second closed state where the plurality of second chuck pins are in contact with the end face of the substrate.

[0013] The sulfuric acid-containing liquid is a liquid having a temperature higher than that of the substrate before the supply of the sulfuric acid-containing liquid. When the supply of the sulfuric acid-containing liquid to the substrate is started, the temperature of the substrate rises and temperature unevenness occurs in the substrate. After a certain period of time has elapsed since the start of the supply of the sulfuric acid-containing liquid, the temperature of the substrate stabilizes and such temperature unevenness disappears or decreases. If the temperature of the substrate changes, the substrate deforms. When starting the supply of the sulfuric acid-containing liquid to the substrate, both the plurality of first chuck pins and the plurality of second chuck pins are brought into contact with the end face of the substrate. Therefore, compared with the case where the supply of the sulfuric acid-containing liquid is started in a state where only the plurality of first chuck pins or only the plurality of second chuck pins are in contact with the end face of the substrate, the posture of the substrate can be made more reliably stable, and the sulfuric acid-containing liquid can be supplied to the substrate.

[0014] After starting to supply the sulfuric acid-containing liquid to the substrate, only a plurality of first chuck pins are brought into contact with the end face of the substrate, and then only a plurality of second chuck pins are brought into contact with the end face of the substrate. If the first chuck pins are separated from the end face of the substrate, the sulfuric acid-containing liquid enters between the substrate and the first chuck pins and is supplied to the portion of the end face of the substrate that contacts the first chuck pins. When the second chuck pins are separated from the end face of the substrate, the portion of the end face of the substrate that contacts the second chuck pins is also supplied with the sulfuric acid-containing liquid. Thus, the sulfuric acid-containing liquid can be supplied to the entire area of the end face of the substrate, and the end face of the substrate can be uniformly processed using the sulfuric acid-containing liquid.

[0015] In the above-described embodiment, at least one of the following features may be imparted to the substrate processing method.

[0016] The substrate processing method further includes: a fifth division step of supplying the sulfuric acid-containing liquid to the substrate while rotating the substrate in the fully closed state by bringing a plurality of the first chuck pins into contact with the end face of the substrate; and a replacement liquid supply step of replacing the sulfuric acid-containing liquid in contact with the substrate with a replacement liquid having a temperature lower than that of the sulfuric acid-containing liquid while rotating the substrate in the fully closed state.

[0017] In this case, the plurality of first chuck pins and the plurality of second chuck pins are switched from the state where only the plurality of second chuck pins are in contact with the end face of the substrate to the state where both the plurality of first chuck pins and the plurality of second chuck pins are in contact with the end face of the substrate. In this state, the sulfuric acid-containing liquid in contact with the substrate is replaced with the replacement liquid. The replacement liquid is a liquid having a temperature lower than that of the sulfuric acid-containing liquid. When the supply of the replacement liquid to the substrate is started, the temperature of the substrate drops and the substrate deforms. When the supply of the replacement liquid to the substrate is started, both the plurality of first chuck pins and the plurality of second chuck pins are brought into contact with the end face of the substrate. Therefore, compared with the case where the supply of the replacement liquid is started in the state where only the plurality of first chuck pins or only the plurality of second chuck pins are in contact with the end face of the substrate, the posture of the substrate can be more reliably stabilized and the replacement liquid can be supplied to the substrate.

[0018] The first division step to the fifth division step may also be a series of continuous steps in which the chemical liquid supply step of supplying the sulfuric acid-containing liquid to the substrate is divided into 5 according to the states of the plurality of first chuck pins and the plurality of second chuck pins. The second division step may also be a step continuous with the first division step. That is, the second division step may be started after the first division step is completed without performing other steps other than the second division step. The third division step may also be a step continuous with the second division step. The same applies to the fourth division step and subsequent steps.

[0019] When starting to replace the sulfuric acid-containing liquid in contact with the substrate with the replacement liquid, the rotation speed of the substrate is greater than the rotation speed of the substrate in at least one of the first division step, the second division step, the third division step, and the fourth division step.

[0020] In this case, while the substrate is rotating at a higher speed than when supplying the sulfuric acid-containing liquid to the substrate, the supply of the replacement liquid to the substrate is started. If the rotation speed of the substrate increases, the force applied to the substrate also increases. Moreover, when starting to supply the replacement liquid to the substrate, the temperature of the substrate drops and the substrate deforms. When starting to supply the replacement liquid to the substrate, both the plurality of first chuck pins and the plurality of second chuck pins are brought into contact with the end face of the substrate. Therefore, compared with the case where the supply of the replacement liquid is started in a state where only the plurality of first chuck pins or only the plurality of second chuck pins are in contact with the end face of the substrate, the posture of the substrate can be more reliably stabilized and the replacement liquid can be supplied to the substrate.

[0021] The replacement liquid is hydrogen peroxide water having a temperature lower than that of the sulfuric acid-containing liquid.

[0022] In this case, the sulfuric acid-containing liquid in contact with the substrate is replaced with hydrogen peroxide water equivalent to the replacement liquid. Hydrogen peroxide water is a liquid having a temperature lower than that of the sulfuric acid-containing liquid. If hydrogen peroxide contained in the hydrogen peroxide water reacts with sulfuric acid contained in the sulfuric acid-containing liquid, heat is generated. Therefore, the decrease in the temperature of the substrate can be mitigated by the reaction heat of sulfuric acid and hydrogen peroxide, and thus the rate of deformation of the substrate can be reduced. Thereby, the posture of the substrate can be more reliably stabilized and hydrogen peroxide water equivalent to the replacement liquid can be supplied to the substrate.

[0023] The substrate processing method is to perform the first division step, the second division step, the third division step, and the fourth division step again after replacing the sulfuric acid-containing liquid in contact with the substrate with the replacement liquid.

[0024] In this case, a sulfuric acid-containing liquid having a temperature higher than that of the substrate is supplied to the substrate, and then a replacement liquid having a temperature lower than that of the sulfuric acid-containing liquid is supplied to the substrate. Then, the sulfuric acid-containing liquid is supplied to the substrate again. If a high-temperature sulfuric acid-containing liquid is continuously supplied to the substrate for a long time, members in contact with the substrate such as the first chuck pins and the second chuck pins become high-temperature. If the sulfuric acid-containing liquid is replaced with a low-temperature replacement liquid and then the sulfuric acid-containing liquid is supplied again, the period during which the temperature of the members in contact with the substrate is high can be shortened.

[0025] The substrate processing method performs at least one of the switching from the first division step to the second division step, the switching from the second division step to the third division step, and the switching from the third division step to the fourth division step while maintaining the rotation speed of the substrate constant.

[0026] In this case, while maintaining the rotational speed of the substrate constant, the plurality of first chuck pins and the plurality of second chuck pins are switched between two of the fully closed state, the first closed state, and the second closed state. If the substrate is accelerated in the rotational direction, the force applied to the substrate increases. If the rotational speed of the substrate is constant, the variation in the force applied to the substrate as the substrate rotates is small. In this state, the states of the plurality of first chuck pins and the plurality of second chuck pins are switched. Thereby, the posture of the substrate can be more reliably stabilized, and the sulfuric acid-containing liquid can be supplied to the substrate.

[0027] The substrate processing method performs at least one of the switching from the first dividing step to the second dividing step and the switching from the third dividing step to the fourth dividing step while maintaining the rotational speed of the substrate constant.

[0028] In this case, while maintaining the rotational speed of the substrate constant, the plurality of first chuck pins or the plurality of second chuck pins are separated from the end face of the substrate. If the plurality of first chuck pins or the plurality of second chuck pins are separated from the end face of the substrate, the force for holding the substrate is weakened. At this time, as long as the rotational speed of the substrate is maintained constant, the posture of the substrate can be more reliably stabilized, and the states of the plurality of first chuck pins and the plurality of second chuck pins can be switched.

[0029] The first dividing step includes the following steps: while rotating the substrate, the sulfuric acid-containing liquid is started to be supplied to the substrate in a state where the plurality of first chuck pins and the plurality of second chuck pins are in contact with the end face of the substrate and the liquid does not contact the substrate.

[0030] In this case, the sulfuric acid-containing liquid is supplied to the substrate that is in contact with tangible objects such as the first chuck pins and air but not in contact with the liquid. If the sulfuric acid-containing liquid is supplied to the substrate to which the liquid is attached, the heat of the sulfuric acid-containing liquid is also transferred to the liquid attached to the substrate, so the rise in the temperature of the substrate is alleviated. If the sulfuric acid-containing liquid is supplied to the substrate to which no liquid is attached, the rise in the temperature of the substrate increases as compared with the case. Therefore, in the case of supplying the sulfuric acid-containing liquid to the substrate that is not in contact with the liquid, by bringing both the plurality of first chuck pins and the plurality of second chuck pins into contact with the end face of the substrate, the posture of the substrate can be more reliably stabilized, and the sulfuric acid-containing liquid can be supplied to the substrate.

[0031] The period of the first dividing step is shorter than the period of the second dividing step and shorter than the period of the fourth dividing step.

[0032] In this case, the period during which both the plurality of first chuck pins and the plurality of second chuck pins are in contact with the end face of the substrate when starting to supply the sulfuric acid-containing liquid is made shorter than the period during which only the plurality of first chuck pins or only the plurality of second chuck pins are in contact with the end face of the substrate. In other words, the period during which the plurality of first chuck pins or the plurality of second chuck pins are separated from the end face of the substrate is made longer. Therefore, the period during which the sulfuric acid-containing liquid is supplied to the portion of the end face of the substrate that is in contact with the first chuck pins or the second chuck pins can be made longer.

[0033] The period of the first dividing step is longer than the period of the third dividing step.

[0034] In this case, the period in the fully closed state when starting to supply the sulfuric acid-containing liquid is made longer than the period in the fully closed state during the supply of the sulfuric acid-containing liquid. Since the period in the fully closed state when starting to supply the sulfuric acid-containing liquid is longer, the plurality of first chuck pins and the plurality of second chuck pins can be switched from the fully closed state to the first closed state in a state where the temperature change rate of the substrate is small. Further, since the period in the fully closed state during the supply of the sulfuric acid-containing liquid is short, that is, the period from when the plurality of first chuck pins and the plurality of second chuck pins are switched from the first closed state to the second closed state is short, the period during which the sulfuric acid-containing liquid is supplied to the portion of the end face of the substrate that is in contact with the first chuck pins or the second chuck pins can be made longer.

[0035] Another embodiment of the present invention provides a substrate processing apparatus having: a plurality of first chuck pins that hold the substrate by contacting an end face of a horizontal substrate; a plurality of second chuck pins that hold the substrate by contacting the end face of the substrate; a first actuator that moves each of the plurality of first chuck pins between an open position where the first chuck pin is separated from the end face of the substrate and a closed position where the first chuck pin is in contact with the end face of the substrate; a second actuator that moves each of the plurality of second chuck pins between an open position where the second chuck pin is separated from the end face of the substrate and a closed position where the second chuck pin is in contact with the end face of the substrate; an electric motor that rotates the substrate held by at least one of the plurality of first chuck pins and the plurality of second chuck pins; a nozzle that supplies a sulfuric acid-containing liquid having a temperature higher than that of the substrate to the substrate held by at least one of the plurality of first chuck pins and the plurality of second chuck pins; a valve that switches between a supply execution state in which the sulfuric acid-containing liquid is supplied to the nozzle and a supply stop state in which the supply of the sulfuric acid-containing liquid to the nozzle is stopped; and a control device that controls the first actuator, the second actuator, the electric motor, and the valve.

[0036] The control device performs the following steps: a first dividing step of starting and continuously supplying the sulfuric acid-containing liquid to the substrate while rotating the substrate in a fully closed state where a plurality of the first chuck pins and a plurality of the second chuck pins are in contact with the end face of the substrate; a second dividing step of separating a plurality of the second chuck pins from the end face of the substrate and supplying the sulfuric acid-containing liquid to the substrate while rotating the substrate in a first closed state where a plurality of the first chuck pins are in contact with the end face of the substrate and a plurality of the second chuck pins are separated from the end face of the substrate; a third dividing step of bringing a plurality of the second chuck pins into contact with the end face of the substrate and supplying the sulfuric acid-containing liquid to the substrate while rotating the substrate in the fully closed state; and a fourth dividing step of separating a plurality of the first chuck pins from the end face of the substrate and supplying the sulfuric acid-containing liquid to the substrate while rotating the substrate in a second closed state where a plurality of the first chuck pins are separated from the end face of the substrate and a plurality of the second chuck pins are in contact with the end face of the substrate. According to this device, the same effects as those of the substrate processing method can be achieved. At least one of the features regarding the substrate processing method can also be imparted to the substrate processing device.

[0037] The above-described or other objects, features, and effects of the present invention will become clear from the description of the embodiments described below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1A It is a schematic top view showing the layout of a substrate processing device according to an embodiment of the present invention.

[0039] Figure 1B It is a schematic cross-sectional view showing a vertical cross-section of the substrate processing device along the Figure 1A shown IB-IB line.

[0040] Figure 2A It is a schematic view of horizontally observing the inside of the processing unit.

[0041] Figure 2B It is a schematic top view showing the inside of the processing unit.

[0042] Figure 3 It is a schematic view of a sulfuric acid supply system for supplying sulfuric acid to the liquid medicine nozzle.

[0043] Figure 4 It is a top view of the rotating chuck.

[0044] Figure 5A-5B It is a schematic view of horizontally observing the chuck pins in the open position and the closed position.

[0045] Figures 6A-6C It is a schematic top view of a plurality of chuck pins indicating a first closed state, a second closed state, and a fully closed state.

[0046] Figure 7 It is a block diagram showing the electrical configuration of the substrate processing apparatus.

[0047] Figure 8 It is a process chart for explaining an example of substrate processing performed by the substrate processing apparatus.

[0048] Figure 9 It is a diagram for explaining the number of chuck pins in contact with the end face of the substrate when a processing liquid such as SPM (Sulfuric acid - Hydrogen Peroxide Mixture) is supplied to the substrate. Detailed Description of the Invention

[0049] Figure 1A It is a schematic top view showing the layout of the substrate processing apparatus 1 according to an embodiment of the present invention. Figure 1B It represents along Figure 1A A schematic cross - sectional view of the vertical section of the substrate processing apparatus 1 along the IB - IB line shown.

[0050] The substrate processing apparatus 1 is a single - wafer type apparatus that processes circular - plate - shaped substrates W such as semiconductor wafers one by one. As Figure 1A shown, the substrate processing apparatus 1 includes: a load port LP that supports a carrier CA accommodating a plurality of substrates W; a processing unit 2 that processes the substrate W transferred from the carrier CA on the load port LP using a processing fluid such as a processing liquid or a processing gas; a transfer system 5 that transfers the substrate W between the carrier CA on the load port LP and the processing unit 2; and a control device 3 that controls the substrate processing apparatus 1. Figure 1A An example in which a plurality of load ports LP and a plurality of processing units 2 are provided in the substrate processing apparatus 1 is shown.

[0051] The plurality of processing units 2 form a plurality of towers TW. Figure 1A An example in which 4 towers TW are formed is shown. Half of the plurality of towers TW are arranged on the right side of the linear transfer path 4 in a top view, and the remaining half of the plurality of towers TW are arranged on the left side of the transfer path 4. As Figure 1B shown, each tower TW includes a plurality of processing units 2 stacked one above the other. In this example, each tower TW includes 6 processing units 2 stacked one above the other. Therefore, 24 processing units 2 are provided in the substrate processing apparatus 1.

[0052] The processing units 2 on the upper side of all the towers TW form an upper-side processing unit group, and the processing units 2 on the lower side of all the towers TW form a lower-side processing unit group. When the number of processing units 2 that make up one tower TW is odd, the central processing unit 2 can belong to either the upper-side processing unit group or the lower-side processing unit group. In Figure 1A and Figure 1B In the example shown, 12 processing units 2 on the upper side form an upper-side processing unit group, and 12 processing units 2 on the lower side form a lower-side processing unit group.

[0053] As Figure 1A shown, the transfer system 5 includes: a relay stage 6 that temporarily holds a substrate W being transferred between a carrier CA on a loading port LP and the processing unit 2; an indexer robot IR that transfers the substrate W between the carrier CA on the loading port LP and the relay stage 6; and a center robot CR that transfers the substrate W between the relay stage 6 and the processing unit 2.

[0054] The relay stage 6 is arranged between the indexer robot IR and the center robot CR in a top view. As Figure 1B shown, the relay stage 6 includes an upper-side relay stage 6u and a lower-side relay stage 6L that overlap each other in a top view. The upper-side relay stage 6u is arranged above the lower-side relay stage 6L. The upper-side relay stage 6u temporarily holds the substrate W being transferred between the upper-side processing unit group and the carrier CA. The lower-side relay stage 6L temporarily holds the substrate W being transferred between the lower-side processing unit group and the carrier CA.

[0055] Both the upper-side relay stage 6u and the lower-side relay stage 6L include a non-processed substrate W holding relay stage 7 for placing non-processed substrates W and a processed substrate W holding relay stage 8 for placing processed substrates W. The non-processed substrate W holding relay stage 7 and the processed substrate W holding relay stage 8 overlap each other in a top view. The non-processed substrate W holding relay stage 7 is arranged above the processed substrate W holding relay stage 8. In at least one of the upper-side relay stage 6u and the lower-side relay stage 6L, the non-processed substrate W holding relay stage 7 can also be arranged below the processed substrate W holding relay stage 8.

[0056] Both the non-processed substrate W holding relay stage 7 and the processed substrate W holding relay stage 8 include a plurality of support parts that horizontally support a plurality of substrates W so that they overlap vertically. The support parts can be a plurality of pins that contact the lower surface of the substrate W, or can be a pair of tracks that horizontally extend on the right and left sides of the substrate W. The substrate W can enter the non-processed substrate W holding relay stage 7 from either the indexer robot IR side or the center robot CR side, and can enter the processed substrate W holding relay stage 8 from either the indexer robot IR side or the center robot CR side.

[0057] The indexer robot IR is arranged between the relay station 6 and the loading port LP when viewed from above. The indexer robot IR includes one or more hand parts Hi that horizontally support the substrate W. The hand part Hi can move parallel in either the horizontal direction or the vertical direction. The hand part Hi can rotate by more than 180 degrees around a vertical line. The hand part Hi can carry the substrate W into and out of any of the carriers CA of the plurality of loading ports LP, and can also carry the substrate W into and out of any of the unprocessed relay stations 7 and the processed relay stations 8.

[0058] As Figure 1B shown, the central robot CR includes: an upper central robot CRu that transports the substrate W between the upper relay station 6u and the upper processing unit group; and a lower central robot CRL that transports the substrate W between the lower relay station 6L and the lower processing unit group. The upper central robot Cru is arranged higher than the lower central robot CRL. The upper central robot CRu and the lower central robot CRL are arranged on the transfer path 4 formed between the plurality of towers TW.

[0059] Both the upper central robot CRu and the lower central robot CRL include one or more hand parts Hc that horizontally support the substrate W. The hand part Hc can move parallel in either the horizontal direction or the vertical direction. The hand part Hc can rotate by more than 180 degrees around a vertical line.

[0060] The hand part Hc of the upper central robot CRu can carry the substrate W into and out of any of the processing units 2 belonging to the upper processing unit group, and can also carry the substrate W into and out of the unprocessed relay station 7 and the processed relay station 8 of the upper relay station 6u. The hand part Hc of the lower central robot CRL can carry the substrate W into and out of any of the processing units 2 belonging to the lower processing unit group, and can also carry the substrate W into and out of the unprocessed relay station 7 and the processed relay station 8 of the lower relay station 6L.

[0061] As Figure 1A shown, the substrate processing apparatus 1 has a plurality of fluid tanks FB that accommodate fluid devices such as valves. One fluid tank FB is provided for each tower TW. Sulfuric acid in the following cabinet CC (refer to Figure 3 ) is supplied to all the processing units 2 included in the tower TW corresponding to the fluid tank FB through any of the fluid tanks FB.

[0062] Next, the processing unit 2 will be described.

[0063] Figure 2A is a schematic view of observing the inside of the processing unit 2 horizontally. Figure 2B is a schematic top view showing the interior of the processing unit 2. Figure 2A In this, DIW (Deionized Water) represents pure water.

[0064] As Figure 2A shown, the processing unit 2 includes: a box-shaped chamber 12 having an internal space; a rotary chuck 21 that horizontally holds one substrate W in the chamber 12 and rotates it around a vertical rotation axis A1 passing through the central portion of the substrate W; and a plurality of nozzles that supply a processing fluid such as a processing liquid or a processing gas to the substrate W held by the rotary chuck 21.

[0065] As Figure 2B shown, the chamber 12 includes: a box-shaped partition wall 13 provided with a loading / unloading port 13b through which the substrate W carried by the central robot CR (refer to Figure 1A ) passes; and a shutter 17 that opens and closes the loading / unloading port 13b. As Figure 2A shown, the chamber 12 further includes a rectifying plate 18 disposed below the air supply port 13a that opens on the top surface of the partition wall 13. The FFU 11 (Fan Filter Unit 11) that conveys clean air (air filtered through a filter) is disposed above the air supply port 13a. The air supply port 13a is provided at the upper end portion of the chamber 12, and the exhaust pipe 49 is disposed at the lower end portion of the chamber 12. The upstream end 49u of the exhaust pipe 49 is disposed within the chamber 12, and the downstream end of the exhaust pipe 49 is disposed outside the chamber 12.

[0066] The rectifying plate 18 divides the internal space of the chamber 12 into an upper space Su above the rectifying plate 18 and a lower space SL below the rectifying plate 18. The upper space Su between the top surface of the partition wall 13 and the upper surface of the rectifying plate 18 is a diffusion space for the clean air to diffuse. The lower space SL between the lower surface of the rectifying plate 18 and the floor surface of the partition wall 13 is a processing space for processing the substrate W. The rotary chuck 21 is disposed in the lower space SL. The vertical distance from the floor surface of the partition wall 13 to the lower surface of the rectifying plate 18 is longer than the vertical distance from the upper surface of the rectifying plate 18 to the top surface of the partition wall 13.

[0067] The FFU 11 conveys clean air to the upper space Su via the air supply opening 13a. The clean air supplied to the upper space Su collides with the flow rectifying plate 18 and diffuses within the upper space Su. The clean air within the upper space Su flows downward from the entire area of the flow rectifying plate 18 through a plurality of through-holes penetrating the flow rectifying plate 18 vertically. The clean air supplied to the lower space SL is sucked into the exhaust pipe 49 and discharged from the chamber 12. Thus, a uniform downward flow (downward current) of clean air flowing downward from the flow rectifying plate 18 is formed within the lower space SL. The processing of the substrate W is performed in a state where the downward flow of clean air is formed.

[0068] The rotary chuck 21 includes: a plurality of chuck pins 22 that horizontally sandwich the substrate W; and a disk-shaped rotary base 23 that supports the plurality of chuck pins 22. The rotary chuck 21 further includes: a rotary shaft 24 that extends downward from the central portion of the rotary base 23; an electric motor 25 that rotates the plurality of chuck pins 22 and the rotary base 23 by rotating the rotary shaft 24; and a chuck housing 26 that surrounds the electric motor 25.

[0069] The rotary base 23 includes a circular upper surface disposed below the substrate W and a cylindrical outer peripheral surface that extends downward from the outer periphery of the upper surface of the rotary base 23. The upper surface of the rotary base 23 is parallel to the lower surface of the substrate W. The upper surface of the rotary base 23 is separated from the lower surface of the substrate W. The upper surface of the rotary base 23 is concentric with the substrate W. The outer diameter of the upper surface of the rotary base 23 is larger than the outer diameter of the substrate W. The chuck pins 22 project upward from the outer peripheral portion of the upper surface of the rotary base 23.

[0070] As Figure 2A shown, the plurality of nozzles include: a chemical liquid nozzle 27 that sprays chemical liquid toward the upper surface of the substrate W; a rinse liquid nozzle 31 that sprays rinse liquid toward the upper surface of the substrate W; and a lower surface nozzle 35 that sprays processing liquid toward the lower surface of the substrate W. Figure 2A An example is shown where at least one of sulfuric acid and hydrogen peroxide water is sprayed from the chemical liquid nozzle 27, and pure water (deionized water: DIW (Deionized Water)) or warm water (pure water with a temperature higher than room temperature) is sprayed from the rinse liquid nozzle 31 and the lower surface nozzle 35.

[0071] The liquid medicine can be sulfuric acid or hydrogen peroxide water, or a mixture of sulfuric acid and hydrogen peroxide water, namely SPM (Sulfuric acid-Hydrogen Peroxide Mixture). The liquid medicine can also be a liquid other than at least one of sulfuric acid and hydrogen peroxide water. Specifically, the liquid medicine can also be a liquid including at least one of sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, acetic acid, ammonia water, hydrogen peroxide water, organic acids (such as citric acid, oxalic acid, etc.), organic bases (such as TMAH: tetramethylammonium hydroxide, etc.), surfactants, and preservatives, or can be a liquid other than these. The temperature of the liquid medicine can be room temperature (for example, 20 to 30 °C), or can be a temperature higher or lower than room temperature.

[0072] The rinsing liquid can also be a liquid other than pure water. Specifically, the rinsing liquid can be a liquid including at least one of pure water, carbonated water, electrolyzed ion water, hydrogen water, ozone water, hydrochloric acid water with a dilution concentration (for example, about 10 to 100 ppm), and ammonia water with a dilution concentration (for example, about 10 to 100 ppm), or can be a liquid other than these. The temperature of the rinsing liquid can be room temperature, or can be a temperature higher or lower than room temperature.

[0073] The liquid medicine nozzle 27 can be a scanning nozzle that moves the collision position of the processing liquid on the substrate W radially within the upper surface of the substrate W, or can be a fixed nozzle that cannot move the collision position of the processing liquid on the substrate W radially. The same applies to other nozzles. Figure 2A An example is shown in which the liquid medicine nozzle 27 and the rinsing liquid nozzle 31 are scanning nozzles, and the lower surface nozzle 35 is a fixed nozzle.

[0074] The processing unit 2 includes a nozzle moving unit that horizontally moves one or more scanning nozzles. One nozzle moving unit connected to two or more scanning nozzles can also be provided, or one nozzle moving unit can be provided for each scanning nozzle. Figure 2B An example is shown in which the liquid medicine nozzle 27 is connected to the first nozzle moving unit 30, and the rinsing liquid nozzle 31 is connected to the second nozzle moving unit 34.

[0075] Figure 2B An example is shown in which the first nozzle moving unit 30 and the second nozzle moving unit 34 are rotation units that horizontally move one or more scanning nozzles along a path that is circular arc-shaped in plan view. Since the radius of the circular arc-shaped path is large, the rotation unit moves one or more scanning nozzles horizontally along a path that is linear in plan view. At least one of the first nozzle moving unit 30 and the second nozzle moving unit 34 can also be a sliding unit that horizontally moves one or more scanning nozzles along a path that is linear in plan view.

[0076] As Figure 2A shown, the chemical liquid nozzle 27 is connected to a sulfuric acid pipe 28p that guides sulfuric acid toward the chemical liquid nozzle 27 and a hydrogen peroxide water pipe 29p that guides hydrogen peroxide water toward the chemical liquid nozzle 27. A sulfuric acid valve 28v and a flow rate adjustment valve 28f are installed on the sulfuric acid pipe 28p. A hydrogen peroxide water valve 29v and a flow rate adjustment valve 29f are installed on the hydrogen peroxide water pipe 29p.

[0077] Although not shown, the sulfuric acid valve 28v includes: a valve body provided with an annular valve seat through which the processing liquid passes; a valve body that can move relative to the valve seat; and an actuator that moves the valve body between a closed position where the valve body contacts the valve seat and an open position where the valve body is separated from the valve seat. The same applies to other valves. The actuator can also be a pneumatic actuator or an electric actuator, or an actuator other than these. The control device 3 opens and closes the sulfuric acid valve 28v by controlling the actuator.

[0078] When the sulfuric acid valve 28v is opened, sulfuric acid is supplied from the sulfuric acid pipe 28p to the chemical liquid nozzle 27 at a flow rate corresponding to the opening degree of the flow rate adjustment valve 28f. When the hydrogen peroxide water valve 29v is opened, hydrogen peroxide water is supplied from the hydrogen peroxide water pipe 29p to the chemical liquid nozzle 27 at a flow rate corresponding to the opening degree of the flow rate adjustment valve 29f. When the sulfuric acid valve 28v and the hydrogen peroxide water are opened, sulfuric acid and hydrogen peroxide water are mixed to generate SPM. This SPM is continuously ejected downward from the chemical liquid nozzle 27. When the chemical liquid nozzle 27 ejects SPM, if the sulfuric acid valve 28v is closed, only hydrogen peroxide water is continuously ejected downward from the chemical liquid nozzle 27.

[0079] The temperature of the SPM ejected from the chemical liquid nozzle 27 is, for example, higher than 100°C. The temperature of the SPM can also be 200°C or higher. The temperature of the sulfuric acid before mixing with hydrogen peroxide water is, for example, higher than 100°C. The temperature of the sulfuric acid can also be 150°C or higher. The temperature of the hydrogen peroxide water before mixing with sulfuric acid is, for example, room temperature (e.g., 20 to 30°C). The temperature of the hydrogen peroxide water before mixing with sulfuric acid can also be a temperature higher than room temperature and lower than the temperature of the sulfuric acid before mixing with hydrogen peroxide water.

[0080] The first nozzle moving unit 30 horizontally moves the chemical liquid nozzle 27 between a processing position where the chemical liquid nozzle 27 overlaps the substrate W in a top view and a standby position where the chemical liquid nozzle 27 does not overlap the substrate W in a top view. If SPM is ejected when the chemical liquid nozzle 27 is disposed at the processing position, the ejected SPM is supplied to the upper surface of the substrate W. Even if SPM is ejected when the chemical liquid nozzle 27 is disposed at the standby position, the ejected SPM is not supplied to the substrate W. The same applies when the chemical liquid nozzle 27 ejects a chemical liquid other than SPM such as hydrogen peroxide water.

[0081] The rinse liquid nozzle 31 is connected to a pure water pipe 32p that guides pure water toward the rinse liquid nozzle 31 and a warm water pipe 33p that guides warm water toward the rinse liquid nozzle 31. A pure water valve 32v is installed in the pure water pipe 32p. A warm water valve 33v and a heater 33h are installed in the warm water pipe 33p. The heater 33h heats the room-temperature pure water flowing in the warm water pipe 33p toward the rinse liquid nozzle 31 to a temperature higher than room temperature.

[0082] When the warm water valve 33v is opened, warm water is supplied from the warm water pipe 33p to the rinse liquid nozzle 31 and continuously sprayed downward from the rinse liquid nozzle 31. The same applies when the pure water valve 32v is opened. The second nozzle moving unit 34 horizontally moves the rinse liquid nozzle 31 between a processing position where the rinse liquid nozzle 31 overlaps the substrate W in a top view and a standby position where the rinse liquid nozzle 31 does not overlap the substrate W in a top view.

[0083] The lower surface nozzle 35 is connected to a rinse liquid pipe 36p that guides the rinse liquid toward the lower surface nozzle 35. A rinse liquid valve 36v is installed in the rinse liquid pipe 36p. When the rinse liquid valve 36v is opened, the rinse liquid is supplied from the rinse liquid pipe 36p to the lower surface nozzle 35 and continuously sprayed upward from the lower surface nozzle 35. When the substrate W is held by the rotary chuck 21, the ejection port of the lower surface nozzle 35 is disposed between the upper surface of the rotary base 23 and the lower surface of the substrate W and faces the central portion of the lower surface of the substrate W in the vertical direction. When the lower surface nozzle 35 ejects a processing liquid such as the rinse liquid, the ejected processing liquid collides with the central portion of the lower surface of the substrate W.

[0084] The processing unit 2 includes a cylindrical processing cup 41 that catches the processing liquid scattered outward from the rotary chuck 21 and the substrate W. The processing cup 41 surrounds the rotary chuck 21 around the rotation axis A1 of the substrate W in the chamber 12. The processing cup 41 includes: a plurality of baffles 44 that catch the processing liquid scattered outward from the rotary chuck 21 and the substrate W; and a plurality of cups 43 that catch the processing liquid guided downward through the plurality of baffles 44. Figure 2A An example is shown in which two baffles 44 and two cups 43 are provided and the outermost cup 43 is integral with the second baffle 44 from the top.

[0085] The baffle 44 includes: a cylindrical portion 45 that surrounds the rotary chuck 21; and an annular top portion 46 that extends obliquely upward from the upper end portion of the cylindrical portion 45 toward the rotation axis A1. The plurality of top portions 46 overlap vertically, and the plurality of cylindrical portions 45 are arranged concentrically. The annular upper end of the top portion 46 corresponds to the upper end 44u of the baffle 44 that surrounds the substrate W and the rotary base 23 in a top view. The plurality of cups 43 are respectively disposed below the plurality of cylindrical portions 45. The cup 43 is formed with an annular groove that catches the processing liquid guided downward through the baffle 44.

[0086] In addition to a plurality of baffles 44 and a plurality of cups 43, the processing cup 41 further includes a cylindrical outer wall 42 that surrounds the plurality of baffles 44 and the plurality of cups 43. The cylindrical outer wall 42 surrounds the outermost baffle 44 among all the baffles 44 at a radial interval. The cylindrical outer wall 42 extends upward from the floor surface of the chamber 12. As described below, the baffle 44 can be lifted and lowered between an upper position and a lower position. The upper end of the cylindrical outer wall 42 is disposed lower than the upper end 44u of the baffle 44 located at the upper position.

[0087] The processing unit 2 includes a baffle lifting unit 47 that individually lifts and lowers the plurality of baffles 44. The baffle lifting unit 47 positions the baffle 44 at an arbitrary position within the range from the upper position to the lower position. Figure 2A The state in which two baffles 44 are disposed at the lower position is shown. The upper position is a position where the upper end 44u of the baffle 44 is disposed higher than the holding position where the substrate W held by the rotary chuck 21 is disposed. The lower position is a position where the upper end 44u of the baffle 44 is disposed lower than the holding position.

[0088] When supplying the processing liquid to the rotating substrate W, at least one baffle 44 is disposed at the upper position. If the processing liquid is supplied to the substrate W in this state, the processing liquid is thrown outward from the substrate W. The thrown processing liquid collides with the inner surface of the baffle 44 that is horizontally opposed to the substrate W and is guided to the cup 43 corresponding to the baffle 44. Therefore, the processing liquid discharged from the substrate W is collected in the cup 43.

[0089] The processing unit 2 includes a partition plate 48 that is disposed along the horizontal plane in the space around the plurality of baffles 44 located at the upper position. The partition plate 48 surrounds the plurality of baffles 44. The inner edge of the partition plate 48 is horizontally separated from the plurality of baffles 44. The outer edge of the partition plate 48 is horizontally separated from the inner peripheral surface of the chamber 12 (the inner peripheral surface of the partition wall 13 that surrounds the substrate W). The partition plate 48 is disposed above the cylindrical outer wall 42. The partition plate 48 is placed on the cylindrical outer wall 42. The partition plate 48 is disposed lower than the upper end 44u of the baffle 44 located at the upper position.

[0090] Next, the sulfuric acid supply system 51 will be described.

[0091] Figure 3 It is a schematic diagram of the sulfuric acid supply system 51 that supplies sulfuric acid to the liquid medicine nozzle 27.

[0092] The sulfuric acid supply system 51 includes: a sulfuric acid tank 52 that stores sulfuric acid to be supplied to the liquid medicine nozzle 27; and a circulation pipe 53 that circulates the sulfuric acid supplied from the sulfuric acid tank 52. The circulation pipe 53 includes: a common pipe 53c that guides the sulfuric acid supplied from the sulfuric acid tank 52 downstream; and a plurality of independent pipes 53i that guide the sulfuric acid passing through the common pipe 53c downstream.

[0093] The plurality of independent pipes 53i branch from the common pipe 53c. One independent pipe 53i is provided for each tower TW formed by the plurality of processing units 2. The sulfuric acid guided by the independent pipe 53i is supplied to the plurality of processing units 2 that constitute the same tower TW. The plurality of sulfuric acid pipes 28p corresponding to the plurality of processing units 2 that constitute the same tower TW are connected to the same independent pipe 53i. The independent pipe 53i passes through the fluid tank FB and returns to the sulfuric acid tank 52.

[0094] The upstream end of the independent pipe 53i is connected to the downstream end of the common pipe 53c. The downstream end of the independent pipe 53i is connected to the sulfuric acid tank 52. The upstream end of the common pipe 53c is also connected to the sulfuric acid tank 52. The sulfuric acid supply system 51 includes a circulation pump 55 that transports the sulfuric acid in the sulfuric acid tank 52 to the circulation pipe 53, and a concentration meter 56 that measures the concentration of the sulfuric acid. Figure 3 An example is shown in which the concentration meter 56 measures the concentration of the sulfuric acid flowing in the independent pipe 53i. The circulated sulfuric acid is supplied from the sulfuric acid tank 52 to the common pipe 53c, and returns to the sulfuric acid tank 52 after passing through any one of the independent pipes 53i.

[0095] Figure 3 An example is shown in which the sulfuric acid tank 52 is disposed within the cabinet CC and the cabinet CC is disposed above the floor on which the substrate processing apparatus 1 is installed. The sulfuric acid tank 52 may also be disposed outside the cabinet CC, or may be disposed below the floor on which the substrate processing apparatus 1 is installed. The sulfuric acid tank 52 may also be disposed within the substrate processing apparatus 1. All of the sulfuric acid supply system 51 may also be a part of the substrate processing apparatus 1, or only a part of the sulfuric acid supply system 51 may be a part of the substrate processing apparatus 1. Figure 3 An example is shown in which only the plurality of independent pipes 53i and the portion downstream thereof in the sulfuric acid supply system 51 are a part of the substrate processing apparatus 1.

[0096] The sulfuric acid supply system 51 includes: a flow meter 57 that measures the flow rate of sulfuric acid flowing downstream in the sulfuric acid pipe 28p; a return pipe 58p that returns the sulfuric acid flowing downstream in the sulfuric acid pipe 28p to the independent pipe 53i; and a return valve 58v that switches between an open state where sulfuric acid flows from the sulfuric acid pipe 28p to the return pipe 58p and a closed state where sulfuric acid does not flow from the sulfuric acid pipe 28p to the return pipe 58p. The return pipe 58p branches from the sulfuric acid pipe 28p upstream of the sulfuric acid valve 28v. The upstream end of the return pipe 58p is connected to the sulfuric acid pipe 28p. The downstream end of the return pipe 58p is connected to the independent pipe 53i inside the fluid tank FB.

[0097] When both the sulfuric acid valve 28v and the return valve 58v are closed, the sulfuric acid in the independent pipe 53i does not flow into the sulfuric acid pipe 28p. When the sulfuric acid valve 28v is open and the return valve 58v is closed, the sulfuric acid in the independent pipe 53i flows into the sulfuric acid pipe 28p and is supplied to the liquid medicine nozzle 27. When the sulfuric acid valve 28v is closed and the return valve 58v is open, the sulfuric acid in the independent pipe 53i flows into the sulfuric acid pipe 28p and is supplied from the sulfuric acid pipe 28p to the return pipe 58p. The sulfuric acid in the return pipe 58p returns to the sulfuric acid tank 52 via the independent pipe 53i.

[0098] The sulfuric acid supply system 51 includes one or more heaters that heat sulfuric acid in the path from the sulfuric acid tank 52 to the liquid medicine nozzle 27. Figure 3 An example is shown in which one upstream heater 54u and a plurality of downstream heaters 54d are provided. In this example, the upstream heater 54u is installed in the common pipe 53c, and the downstream heaters 54d are installed in the sulfuric acid pipe 28p upstream of the connection position of the sulfuric acid pipe 28p and the return pipe 58p. One downstream heater 54d is provided for each sulfuric acid pipe 28p. The sulfuric acid in the sulfuric acid tank 52 returns to the sulfuric acid tank 52 after being heated by the upstream heater 54u, or both the upstream heater 54u and the downstream heaters 54d. Alternatively, the sulfuric acid in the sulfuric acid tank 52 is supplied to the liquid medicine nozzle 27 after being heated by both the upstream heater 54u and the downstream heaters 54d.

[0099] Next, the chuck pin 22 will be described.

[0100] Figure 4 It is a top view of the rotary chuck 21. Figure 5A It is a schematic view of horizontally observing the chuck pin 22 in the open position. Figure 5B It is a schematic view of horizontally observing the chuck pin 22 in the closed position.

[0101] As Figure 4As shown, a plurality of chuck pins 22 include: a plurality of first chuck pins 22a that horizontally clamp the substrate W; and a plurality of second chuck pins 22b that horizontally clamp the substrate W. Figure 4 An example is shown in which three first chuck pins 22a and three second chuck pins 22b are alternately arranged at equal intervals in the circumferential direction of the substrate W. The number of the first chuck pins 22a and the number of the second chuck pins 22b are not limited to Figure 4 the example shown. The same applies to the arrangement of the first chuck pins 22a and the second chuck pins 22b. The number of the first chuck pins 22a and the number of the second chuck pins 22b may be the same or different. The specifications of the first chuck pins 22a such as shape, size, weight, and material may be the same as or different from those of the second chuck pins 22b.

[0102] As Figure 5A and Figure 5B shown, both the first chuck pins 22a and the second chuck pins 22b are capable of moving between an open position separated from the end face of the substrate W and a closed position in contact with the end face of the substrate W relative to the rotating base 23. As Figure 4 shown, the rotary chuck 21 includes: a first actuator 61a that moves each of the plurality of first chuck pins 22a between the open position and the closed position; and a second actuator 61b that moves each of the plurality of second chuck pins 22b between the open position and the closed position. Figure 4 In, the second actuator 61b and the second power transmission path 62b are indicated by thick dashed lines. The first actuator 61a may be an electric motor or a cylinder, or may be an actuator other than these. The same applies to the second actuator 61b.

[0103] The rotary chuck 21 further includes: a first power transmission path 62a that transmits the power of the first actuator 61a to each of the plurality of first chuck pins 22a; and a second power transmission path 62b that transmits the power of the second actuator 61b to each of the plurality of second chuck pins 22b. The first actuator 61a and the first power transmission path 62a are arranged in the internal space of the rotary chuck 21 formed by the rotary base 23 and the chuck housing 26 (refer to Figure 2A ). The same applies to the second actuator 61b and the second power transmission path 62b.

[0104] The first power transmission path 62a transmits the power of the first actuator 61a to all the first chuck pins 22a while converting the movement of the first actuator 61a into the movement of the first chuck pins 22a. If any one of the first chuck pins 22a is arranged in the open position, all the other first chuck pins 22a are also arranged in the open position. The same applies to the second power transmission path 62b and the second chuck pins 22b.

[0105] The first power transmission path 62a may be a physically continuous path or a non-physically continuous path from the first actuator 61a to all of the first chuck pins 22a. In either case, the first power transmission path 62a may also include mechanical elements such as cams, linkages, and ball screws. In the case where the first power transmission path 62a is not physically continuous from the first actuator 61a to all of the first chuck pins 22a, the first power transmission path 62a may also transmit the power of the first actuator 61a to all of the first chuck pins 22a via the magnetic force of an electromagnet or a permanent magnet. The same applies to the second power transmission path 62b.

[0106] The first actuator 61a may move the first chuck pin 22a to the open position side and the closed position side, or may move the first chuck pin 22a only to the open position side. The same applies to the second actuator 61b. In the latter case, the first chuck pin 22a that can move between the initial position and the open position may be located at the initial position by the force of a magnet or a spring. In this case, when the force that causes the first actuator 61a to move the first chuck pin 22a to the open position disappears, the first actuator 61a returns to the initial position via the closed position due to the force of the magnet or the spring. At this time, if the substrate W is inside a plurality of the first chuck pins 22a, the first chuck pins 22a come into contact with the end surface of the substrate W and stop at the closed position. Therefore, the substrate W is held by a plurality of the first chuck pins 22a.

[0107] Figure 5A and Figure 5B An example is shown in which each of the first chuck pins 22a and the second chuck pins 22b includes a support portion 63s disposed below the substrate W and a holding portion 63g disposed outside the substrate W. The substrate W is placed horizontally on the support portions 63s of the first chuck pins 22a and the second chuck pins 22b in a state where all of the holding portions 63g are separated from the end surface of the substrate W. The holding portions 63g of the plurality of first chuck pins 22a are horizontally pressed against the end surface of the substrate W supported by the support portions 63s of the first chuck pins 22a and the second chuck pins 22b. The same applies to the holding portions 63g of the plurality of second chuck pins 22b.

[0108] Figure 5A and Figure 5BAn example is shown in which the inclined surface of a frustum of a cone that tapers upward is the support portion 63s, and the vertical cylindrical surface extending upward from the upper edge of the inclined surface is the gripping portion 63g. In this example, the support portion 63s and the gripping portion 63g rotate relative to the rotating base 23 about a vertical rotation axis A2 that is different from the vertical center line of the gripping portion 63g. If the first chuck pin 22a or the second chuck pin 22b is rotated relative to the rotating base 23, the horizontal distance from the rotation axis A1 (see Figure 4 ) of the substrate W to the gripping portion 63g increases or decreases.

[0109] The shapes of the first chuck pin 22a and the second chuck pin 22b are not limited to Figure 5A and Figure 5B shown in the figure. The first chuck pin 22a and the second chuck pin 22b may also include: a bottom plate that can rotate relative to the rotating base 23 about a vertical rotation axis A2; a support portion 63s that extends upward from the bottom plate; and a gripping portion 63g that extends upward from the bottom plate at a position separated from the support portion 63s. The gripping portion 63g may also be two planes that form a V-shaped groove opening toward the substrate W side. The support portion 63s may be a plane inclined with respect to the horizontal plane, or may be a hemispherical surface that makes point contact with the lower surface of the substrate W. The support portion 63s may also be a part or all of a support pin that is held by the rotating base 23 at a position separated from the first chuck pin 22a and the second chuck pin 22b.

[0110] Figure 6A is a schematic top view showing a plurality of chuck pins 22 in a first closed state. Figure 6B is a schematic top view showing a plurality of chuck pins 22 in a second closed state. Figure 6C is a schematic top view showing a plurality of chuck pins 22 in a fully closed state. In Figures 6A to 6C , the first chuck pin 22a and the second chuck pin 22b located at the closed position are blackened.

[0111] In Figure 6A shown in the first closed state, the gripping portion 63g of the first chuck pin 22a contacts the end face of the substrate W, and the gripping portion 63g of the second chuck pin 22b is separated from the end face of the substrate W. In Figure 6B shown in the second closed state, the gripping portion 63g of the first chuck pin 22a is separated from the end face of the substrate W, and the gripping portion 63g of the second chuck pin 22b contacts the end face of the substrate W. In Figure 6C shown in the fully closed state, the gripping portion 63g of the first chuck pin 22a contacts the end face of the substrate W, and the gripping portion 63g of the second chuck pin 22b contacts the end face of the substrate W. In Figure 4In the fully opened state shown, the gripping portion 63g of the first chuck pin 22a is separated from the end face of the substrate W, and the gripping portion 63g of the second chuck pin 22b is separated from the end face of the substrate W.

[0112] Next, the electrical configuration of the substrate processing apparatus 1 will be described.

[0113] Figure 7 FIG. is a block diagram showing the electrical configuration of the substrate processing apparatus 1. The control device 3 is a computer including a computer main body 3a and a peripheral device 3d connected to the computer main body 3a. The computer main body 3a includes a CPU 3b (central processing unit: central processing device) that executes various commands and a memory 3c that stores information. The peripheral device 3d includes: a storage device 3e that stores information such as a program P to be transmitted and received between the memory 3c; a reader 3f that reads information from a removable medium RM; and a communication device 3g that communicates with other devices such as a host.

[0114] The control device 3 is connected to an input device and a display device. The input device is operated when an operator such as a user or a maintenance person inputs information to the substrate processing apparatus 1. Information is displayed on the screen of the display device. The input device can be any one of a keyboard, a pointing device, and a touch panel, or can be other devices. A touch panel display that also serves as an input device and a display device can be provided in the substrate processing apparatus 1.

[0115] The CPU 3b executes the program P stored in the storage device 3e. The program P in the storage device 3e can be a program pre-installed in the control device 3, a program transmitted from the removable medium RM to the storage device 3e through the reader 3f, or a program transmitted from an external device such as a host to the storage device 3e through the communication device 3g.

[0116] The memory 3c is a volatile memory that retains storage only when power is supplied. The storage device 3e and the removable medium RM are non-volatile memories that retain storage even when power is not supplied. The storage device 3e is, for example, a magnetic storage device such as a hard disk. The removable medium RM is, for example, an optical disc such as a CD (Compact Disc) or a semiconductor memory such as a memory card. The removable medium RM is an example of a computer-readable storage medium storing the program P. The removable medium RM is a non-transitory tangible medium.

[0117] The storage device 3e stores a plurality of recipes. A recipe is information that specifies the processing content, processing conditions, and processing sequence of the substrate W. The plurality of recipes are the same as each other in at least one of the processing content, processing conditions, and processing sequence of the substrate W. The control device 3 controls the substrate processing apparatus 1 according to the recipe specified by the host computer to process the substrate W. The control device 3 is programmed to execute each of the processes described below.

[0118] Next, an example of the processing of the substrate W will be described.

[0119] Figure 8 It is a process chart for explaining an example of the processing of the substrate W by the substrate processing apparatus 1. Hereinafter, with reference to Figure 2A 、 Figure 2B and Figure 8 。 Figure 8 The hot DIW (Hot Deionized Water) in [[ ]] represents warm water (pure water with a temperature higher than room temperature). The same applies to other figures.

[0120] The substrate W includes a front surface and a back surface that are parallel to each other, and an annular end surface that connects the outer edges of the front surface and the back surface over the entire circumference of the front surface and the back surface. The front surface and the back surface of the substrate W are flat surfaces that are parallel to each other. The front surface of the substrate W is a device formation surface on which devices are formed. The back surface of the substrate W is a non-device formation surface on which no devices are formed. Both the front surface and the back surface of the substrate W may be device formation surfaces.

[0121] Hereinafter, an example of removing a film from the front surface and the end surface of a disk-shaped semiconductor wafer such as a silicon wafer will be described. The film to be removed may be a resist film or a film other than a resist film such as a metal film. The metal film may be any one of a Ti film, a TiN film, and a NiPt film, or may be a metal film other than these.

[0122] In the case of removing a metal film from the front surface and the end surface of a semiconductor wafer as an example of the substrate W, before the processes described below, a process of forming a transistor on the front surface of the semiconductor wafer, a process of forming a metal film on the front surface of the semiconductor wafer on which the transistor is formed, and forming a silicide by heating the semiconductor wafer on which the metal film is formed may be performed.

[0123] When processing the substrate W by the substrate processing apparatus 1, a loading process of loading the substrate W into the chamber 12 is performed ( Figure 8 step S1).

[0124] Specifically, in a state where all the baffles 44 are in the lower position and all the scan nozzles are in the standby position, the central robot CR (refer to Figure 1A)While horizontally supporting the substrate W with the hand Hc, the hand Hc is inserted into the chamber 12. Then, with the substrate W facing upward, the central robot CR places the substrate W on the hand Hc onto a plurality of chuck pins 22. Then, the central robot CR retracts the hand Hc from the inside of the chamber 12.

[0125] After placing the substrate W on the plurality of chuck pins 22, the plurality of chuck pins 22 are pressed against the outer peripheral surface of the substrate W to hold the substrate W. Then, the electric motor 25 is driven to start rotating the substrate W. Thus, the substrate W rotates at the chemical solution supply speed. Before or after the rotation of the substrate W starts, the baffle lifting unit 47 raises at least one baffle 44 from the lower position to the upper position.

[0126] Next, a chemical solution supply step ( Figure 8 step S2) of supplying SPM, which is an example of a chemical solution, to the upper surface of the substrate W to form a liquid film of SPM covering the entire area of the upper surface of the substrate W is performed.

[0127] Specifically, in a state where at least one baffle 44 is in the upper position, the first nozzle moving unit 30 moves the chemical solution nozzle 27 from the standby position to the processing position. Then, the sulfuric acid valve 28v and the hydrogen peroxide valve 29v are opened, and the chemical solution nozzle 27 starts to eject SPM. After the SPM ejected from the chemical solution nozzle 27 collides with the upper surface of the substrate W rotating at the chemical solution supply speed, it flows outward along the upper surface of the substrate W due to centrifugal force. Therefore, SPM is supplied to the entire area of the upper surface of the substrate W to form a liquid film of SPM covering the entire area of the upper surface of the substrate W. When the chemical solution nozzle 27 ejects SPM, the first nozzle moving unit 30 can move the collision position so that the collision position of SPM with the upper surface of the substrate W passes through the central portion and the outer peripheral portion, or can make the collision position stationary at the central portion. The same applies to the processing liquid supplied to the upper surface of the substrate W after SPM.

[0128] Next, a replacement liquid supply step ( Figure 8 step S3) of supplying hydrogen peroxide water, which is an example of a replacement liquid, to the upper surface of the substrate W to replace the SPM on the substrate W with hydrogen peroxide water is performed.

[0129] Specifically, in a state where at least one baffle 44 is in the upper position and the chemical solution nozzle 27 located at the processing position is ejecting SPM, the sulfuric acid valve 28v is closed. Thus, the ejection of SPM from the chemical solution nozzle 27 stops, and the chemical solution nozzle 27 starts to eject hydrogen peroxide water. Before or after the start of ejecting hydrogen peroxide water, the baffle lifting unit 47 can also vertically move at least one baffle 44 to switch the baffle 44 that catches the liquid discharged from the substrate W.

[0130] After the hydrogen peroxide water ejected from the chemical liquid nozzle 27 collides with the upper surface of the substrate W rotating at the displacement liquid supply speed, it flows outward along the upper surface of the substrate W due to centrifugal force. The SPM on the substrate W is replaced with the hydrogen peroxide water ejected from the chemical liquid nozzle 27. Thereby, a liquid film of hydrogen peroxide water covering the entire area of the upper surface of the substrate W is formed. If a predetermined time has elapsed since the sulfuric acid valve 28v was closed, the hydrogen peroxide water valve 29v is closed to stop ejecting the hydrogen peroxide water. Then, the first nozzle moving unit 30 moves the chemical liquid nozzle 27 to the standby position.

[0131] Next, a rinse liquid supply step ( Figure 8 step S4) of supplying warm water, which is an example of a rinse liquid, to the upper surface of the substrate W to rinse the hydrogen peroxide water on the substrate W is performed.

[0132] Specifically, in a state where at least one baffle 44 is in the upper position, the second nozzle moving unit 34 moves the rinse liquid nozzle 31 from the standby position to the processing position. Then, the warm water valve 33v is opened, and the rinse liquid nozzle 31 starts ejecting warm water. Before starting to eject warm water, the baffle lifting unit 47 may vertically move at least one baffle 44 to switch the baffle 44 that catches the liquid discharged from the substrate W.

[0133] After the warm water ejected from the rinse liquid nozzle 31 collides with the upper surface of the substrate W rotating at the rinse liquid supply speed, it flows outward along the upper surface of the substrate W due to centrifugal force. The hydrogen peroxide water on the substrate W is replaced with the warm water ejected from the rinse liquid nozzle 31. Thereby, a liquid film of warm water covering the entire area of the upper surface of the substrate W is formed. If a predetermined time has elapsed since the warm water valve 33v was opened, the warm water valve 33v is closed to stop ejecting the warm water. Then, the second nozzle moving unit 34 moves the rinse liquid nozzle 31 to the standby position.

[0134] Next, a drying step ( Figure 8 step S5) of removing the warm water from the upper surface of the substrate W to dry the substrate W is performed.

[0135] Specifically, the electric motor 25 accelerates the substrate W in the rotation direction and rotates the substrate W at a high rotation speed (e.g., several thousand rpm) higher than the rotation speed of the substrate W from the chemical liquid supply step to the rinse liquid supply step. After the electric motor 25 starts the high-speed rotation of the substrate W, the warm water scatters outward from the substrate W and is removed from the upper surface of the substrate W. Thereby, the substrate W is dried. If a predetermined time has elapsed since the start of the high-speed rotation of the substrate W, the electric motor 25 stops rotating. Thereby, the rotation of the substrate W stops.

[0136] Next, a carry-out step ( Figure 8 step S6) of carrying out the substrate W from the chamber 12 is performed.

[0137] Specifically, the baffle lift unit 47 lowers all the baffles 44 to the lower position. Then, the center robot CR inserts the hand Hc into the chamber 12. After the plurality of chuck pins 22 release the holding of the substrate W, the center robot CR supports the substrate W on the rotary chuck 21 using the hand Hc. Then, while horizontally supporting the substrate W using the hand Hc, the center robot CR retracts the hand Hc from the inside of the chamber 12. Thereby, the processed substrate W is carried out of the chamber 12.

[0138] Next, the number of chuck pins 22 that contact the end face of the substrate W will be described.

[0139] Figure 9 It is a diagram for explaining the number of chuck pins 22 that contact the end face of the substrate W when a processing liquid such as SPM is supplied to the substrate W. Figure 9 The "number of pins" in represents the number of chuck pins 22 that contact the end face of the substrate W, Figure 9 and the "rpm" in represents the rotational speed of the substrate W.

[0140] Figure 9 Examples of supplying SPM, hydrogen peroxide water, and warm water to the substrate W in sequence, i.e., sequence 1, and examples of supplying SPM and rinsing liquid to the substrate W in sequence, i.e., sequence 2, are shown. The specific processing flow in sequence 1 is the same as that Figure 8 shown. In sequence 1 and sequence 2, when supplying SPM to the substrate W, the substrate W is rotated in a state where all the first chuck pins 22a and all the second chuck pins 22b are in contact with the end face of the substrate W ( Figure 6C the state shown). In this state, the supply of SPM to the substrate W is started. Thereby, a liquid film of SPM covering the entire area of the upper surface of the substrate W is formed.

[0141] If a first chemical liquid supply time T1 has elapsed since the start of the supply of SPM, then in a state where all the first chuck pins 22a are in contact with the end face of the substrate W, all the second chuck pins 22b are separated from the end face of the substrate W (see Figure 6A ). If a second chemical liquid supply time T2 has elapsed from this point, then all the second chuck pins 22b are brought into contact with the end face of the substrate W (see Figure 6C ). If a third chemical liquid supply time T3 has elapsed from this point, then in a state where all the second chuck pins 22b are in contact with the end face of the substrate W, all the first chuck pins 22a are separated from the end face of the substrate W (see Figure 6B ). If a fourth chemical liquid supply time T4 has elapsed from this point, then all the first chuck pins 22a are brought into contact with the end face of the substrate W (see Figure 6C ).

[0142] If the fifth chemical solution supply time T5 elapses from the time when all the first chuck pins 22a come into contact with the end face of the substrate W in Sequence 1, then, in a state where all the first chuck pins 22a and all the second chuck pins 22b are in contact with the end face of the substrate W, the supply of SPM to the substrate W is stopped, and the supply of hydrogen peroxide water to the substrate W is started. Thereby, the high-temperature SPM on the substrate W is replaced with hydrogen peroxide water at room temperature, and a liquid film of hydrogen peroxide water covering the entire area of the upper surface of the substrate W is formed. Then, in a state where all the first chuck pins 22a and all the second chuck pins 22b are in contact with the end face of the substrate W, the supply of hydrogen peroxide water to the substrate W is stopped, and the supply of warm water to the substrate W is started. Thereby, the hydrogen peroxide water on the substrate W is replaced with warm water, and a liquid film of warm water covering the entire area of the upper surface of the substrate W is formed.

[0143] If the fifth chemical solution supply time T5 elapses from the time when all the first chuck pins 22a come into contact with the end face of the substrate W in Sequence 2, then, in a state where all the first chuck pins 22a and all the second chuck pins 22b are in contact with the end face of the substrate W, the supply of SPM to the substrate W is stopped, and the supply of a rinsing liquid to the substrate W is started. Thereby, the high-temperature SPM on the substrate W is replaced with a rinsing liquid at room temperature, and a liquid film of the rinsing liquid covering the entire area of the upper surface of the substrate W is formed. The rinsing liquid can be pure water at room temperature or other liquids.

[0144] In Sequence 1 and Sequence 2, during the period when SPM is supplied to the substrate W, the chuck pins 22 in contact with the end face of the substrate W are switched in the order of 6 first chuck pins 22a and second chuck pins 22b, 3 first chuck pins 22a, 6 first chuck pins 22a and second chuck pins 22b, 3 second chuck pins 22b, 6 first chuck pins 22a and second chuck pins 22b. During the period when hydrogen peroxide water or the rinsing liquid is supplied to the substrate W, the chuck pins 22 in contact with the end face of the substrate W are maintained as 6 first chuck pins 22a and second chuck pins 22b.

[0145] The supply time T1 of the first liquid medicine is shorter than the supply time T2 of the second liquid medicine. The supply time T1 of the first liquid medicine is shorter than the supply time T4 of the fourth liquid medicine. The supply time T2 of the second liquid medicine may be the same as or different from the supply time T4 of the fourth liquid medicine. The supply time T1 of the first liquid medicine is longer than the supply time T3 of the third liquid medicine. The supply time T1 of the first liquid medicine is longer than the supply time T5 of the fifth liquid medicine. The supply time T3 of the third liquid medicine may be the same as or different from the supply time T5 of the fifth liquid medicine. The supply time T1 of the first liquid medicine may be the same as or different from the period during which hydrogen peroxide water is supplied to the substrate W (hereinafter referred to as the replacement liquid supply time T6). The supply time T1 of the first liquid medicine may be the same as or different from the period during which warm water is supplied to the substrate W (hereinafter referred to as the rinse liquid supply time T7). The supply time T1 of the first liquid medicine may be the same as or different from the period during which the rinse liquid is supplied to the substrate W (hereinafter referred to as the rinse liquid supply time T8).

[0146] The replacement liquid supply time T6 is longer than each of the supply time T3 of the third liquid medicine and the supply time T5 of the fifth liquid medicine, and shorter than the supply time T1 of the first liquid medicine. The rinse liquid supply time T7 is longer than the supply time T1 of the first liquid medicine, and shorter than each of the supply time T2 of the second liquid medicine and the supply time T4 of the fourth liquid medicine. The rinse liquid supply time T8 is longer than each of the supply time T2 of the second liquid medicine and the supply time T4 of the fourth liquid medicine, and shorter than the period during which SPM is supplied to the substrate W (the sum of the supply times T1 to T5 of the first to fifth liquid medicines). The lengths of the replacement liquid supply time T6, the rinse liquid supply time T7, and the rinse liquid supply time T8 are not limited to Figure 9 the examples shown. Similarly, the lengths of the supply times T1 to T5 of the first to fifth liquid medicines are not limited to Figure 9 the examples shown.

[0147] In Sequence 1 and Sequence 2, all of the first chuck pins 22a or all of the second chuck pins 22b may be separated from the end face of the substrate W after a time equal to or longer than the supply time T1 of the first liquid medicine has elapsed since the start of supplying hydrogen peroxide water or the rinse liquid to the substrate W. Alternatively, in Sequence 1 and Sequence 2, all of the first chuck pins 22a or all of the second chuck pins 22b may be separated from the end face of the substrate W before a time equal to the supply time T1 of the first liquid medicine has elapsed since the start of supplying hydrogen peroxide water or the rinse liquid to the substrate W.

[0148] When supplying SPM to the substrate W, the rotational speed of the substrate W can be constant or variable. The same applies when supplying hydrogen peroxide water, warm water, and the rinsing liquid to the substrate W. The rotational speed of the substrate W (chemical solution supply speed) when supplying SPM to the substrate W can be the same as or different from the rotational speed of the substrate W (replacement liquid supply speed) when supplying hydrogen peroxide water to the substrate W. Similarly, the chemical solution supply speed can be the same as or different from the rotational speed of the substrate W (rinsing liquid supply speed) when supplying warm water or the rinsing liquid to the substrate W. In the case of variable rotational speed, only the maximum value of the rotational speed needs to be used as the comparison object.

[0149] In Sequence 1 and Sequence 2, the rotational speed of the substrate W is maintained at the first rotational speed X, and then it is increased from the first rotational speed X to the second rotational speed Y and maintained at the second rotational speed Y. The increase in the rotational speed of the substrate W from the first rotational speed X to the second rotational speed Y starts in a state where all the first chuck pins 22a and all the second chuck pins 22b are in contact with the end face of the substrate W. The increase in the rotational speed of the substrate W can also start simultaneously with the elapse of the fifth chemical solution supply time T5, or can start before or after the elapse of the fifth chemical solution supply time T5. In any case, the rotational speed of the substrate W is maintained at the first rotational speed X before the elapse of the fourth chemical solution supply time T4. Therefore, the number of chuck pins 22 in contact with the end face of the substrate W can also be changed in a state where the substrate W is rotating at a constant rotational speed.

[0150] As shown by the thick line in Sequence 2, it is also possible to supply SPM and the rinsing liquid to the substrate W again after supplying SPM and the rinsing liquid to the substrate W. In the second supply of SPM and the rinsing liquid, the number of chuck pins 22 in contact with the end face of the substrate W, the rotational speed of the substrate W, etc. are the same as those in the first supply of SPM and the rinsing liquid. In Sequence 1, it is also possible to perform a second supply of SPM, hydrogen peroxide water, and warm water.

[0151] When supplying SPM to the substrate W, if the first chuck pin 22a is separated from the end face of the substrate W, SPM enters between the substrate W and the first chuck pin 22a and is supplied to the portion of the end face of the substrate W that is in contact with the first chuck pin 22a. Similarly, when supplying SPM to the substrate W, if the second chuck pin 22b is separated from the end face of the substrate W, SPM enters between the substrate W and the second chuck pin 22b and is supplied to the portion of the end face of the substrate W that is in contact with the second chuck pin 22b. Therefore, as long as each of the first chuck pin 22a and the second chuck pin 22b is separated from the end face of the substrate W more than once when supplying SPM to the substrate W, it is possible to supply SPM to the entire area of the end face of the substrate W.

[0152] In Sequence 1 and Sequence 2, the entire period during which a plurality of first chuck pins 22a and a plurality of second chuck pins 22b are in contact with the end face of the substrate W when starting to supply the SPM corresponds to the first division process, and the entire period during which the plurality of first chuck pins 22a are in contact with the end face of the substrate W and the plurality of second chuck pins 22b are separated from the end face of the substrate W corresponds to the second division process. Similarly, the entire period during which the plurality of first chuck pins 22a and the plurality of second chuck pins 22b are in contact with the end face of the substrate W during the supply of the SPM corresponds to the third division process, and the entire period during which the plurality of first chuck pins 22a are separated from the end face of the substrate W and the plurality of second chuck pins 22b are in contact with the end face of the substrate W corresponds to the fourth division process. The entire period during which the first chuck pin 22a and the plurality of second chuck pins 22b are in contact with the end face of the substrate W when ending the supply of the SPM corresponds to the fifth division process. In Sequence 1, the entire period during which hydrogen peroxide water is supplied to the substrate W corresponds to the replacement liquid supply process. In Sequence 2, the entire period during which the rinse liquid is supplied to the substrate W corresponds to the replacement liquid supply process. The first division process to the fifth division process are a series of continuous processes that divide the chemical liquid supply process ( Figure 8 step S2) into 5 according to the states of the plurality of first chuck pins 22a and the plurality of second chuck pins 22b.

[0153] Next, the effects of the present embodiment will be described.

[0154] In the present embodiment, while rotating the substrate W, a sulfuric acid-containing liquid such as SPM is supplied to the substrate W in a state where at least one of the plurality of first chuck pins 22a and the plurality of second chuck pins 22b is in contact with the end face of the horizontal substrate W. Specifically, in the fully closed state where the plurality of first chuck pins 22a and the plurality of second chuck pins 22b are in contact with the end face of the substrate W, the sulfuric acid-containing liquid is started to be supplied to the substrate W. Then, the plurality of first chuck pins 22a and the plurality of second chuck pins 22b are switched to the first closed state where the plurality of first chuck pins 22a are in contact with the end face of the substrate W and the plurality of second chuck pins 22b are separated from the end face of the substrate W. Then, the plurality of first chuck pins 22a and the plurality of second chuck pins 22b are switched to the first closed state. Then, the plurality of first chuck pins 22a and the plurality of second chuck pins 22b are switched to the second closed state where the plurality of second chuck pins 22b are in contact with the end face of the substrate W.

[0155] The sulfuric acid-containing liquid is a liquid having a temperature higher than the temperature of the substrate W before the sulfuric acid-containing liquid is supplied. When the supply of the sulfuric acid-containing liquid to the substrate W is started, the temperature of the substrate W rises and non-uniformity in the temperature of the substrate W appears. After a certain period of time has elapsed since the start of the supply of the sulfuric acid-containing liquid, the temperature of the substrate W stabilizes and this temperature non-uniformity disappears or decreases. If the temperature of the substrate W changes, the substrate W deforms. When starting to supply the sulfuric acid-containing liquid to the substrate W, both the plurality of first chuck pins 22a and the plurality of second chuck pins 22b are brought into contact with the end face of the substrate W. Therefore, compared with the case where the supply of the sulfuric acid-containing liquid is started in a state where only the plurality of first chuck pins 22a or only the plurality of second chuck pins 22b are in contact with the end face of the substrate W, the posture of the substrate W can be more reliably stabilized and the sulfuric acid-containing liquid can be supplied to the substrate W.

[0156] After starting the supply of the sulfuric acid-containing liquid to the substrate W, only the plurality of first chuck pins 22a are brought into contact with the end face of the substrate W, and then only the plurality of second chuck pins 22b are brought into contact with the end face of the substrate W. If the first chuck pin 22a is separated from the end face of the substrate W, the sulfuric acid-containing liquid enters between the substrate W and the first chuck pin 22a and is supplied to the portion of the end face of the substrate W that is in contact with the first chuck pin 22a. When the second chuck pin 22b is separated from the end face of the substrate W, the portion of the end face of the substrate W that is in contact with the second chuck pin 22b is supplied with the sulfuric acid-containing liquid. Thereby, the sulfuric acid-containing liquid can be supplied to the entire region of the end face of the substrate W, and the end face of the substrate W can be uniformly processed using the sulfuric acid-containing liquid.

[0157] In the present embodiment, the state is switched from a state where only the plurality of second chuck pins 22b are in contact with the end face of the substrate W to a state where both the plurality of first chuck pins 22a and the plurality of second chuck pins 22b are in contact with the end face of the substrate W. In this state, a replacement liquid such as hydrogen peroxide water or a rinsing liquid is used to replace the sulfuric acid-containing liquid in contact with the substrate W. The replacement liquid is a liquid having a temperature lower than that of the sulfuric acid-containing liquid. When starting to supply the replacement liquid to the substrate W, the temperature of the substrate W drops and the substrate W deforms. When starting to supply the replacement liquid to the substrate W, both the plurality of first chuck pins 22a and the plurality of second chuck pins 22b are brought into contact with the end face of the substrate W. Therefore, compared with the case where the supply of the replacement liquid is started in a state where only the plurality of first chuck pins 22a or only the plurality of second chuck pins 22b are in contact with the end face of the substrate W, the posture of the substrate W can be more reliably stabilized and the replacement liquid can be supplied to the substrate W.

[0158] In the present embodiment, while the substrate W is rotating at a speed higher than the speed at which the sulfuric acid-containing liquid is supplied to the substrate W, the supply of the replacement liquid to the substrate W is started. When the rotational speed of the substrate W increases, the force applied to the substrate W also increases. Further, when the supply of the replacement liquid to the substrate W is started, the temperature of the substrate W decreases and the substrate W deforms. When the supply of the replacement liquid to the substrate W is started, both the plurality of first chuck pins 22a and the plurality of second chuck pins 22b are brought into contact with the end surface of the substrate W. Therefore, as compared with the case where the supply of the replacement liquid is started in a state where only the plurality of first chuck pins 22a or only the plurality of second chuck pins 22b are in contact with the end surface of the substrate W, the posture of the substrate W can be more reliably stabilized and the replacement liquid can be supplied to the substrate W.

[0159] In the present embodiment, the sulfuric acid-containing liquid in contact with the substrate W is replaced with hydrogen peroxide water equivalent to the replacement liquid. Hydrogen peroxide water is a liquid having a lower temperature than the sulfuric acid-containing liquid. If hydrogen peroxide contained in the hydrogen peroxide water reacts with sulfuric acid contained in the sulfuric acid-containing liquid, heat is generated. Therefore, the decrease in the temperature of the substrate W can be mitigated by the reaction heat of sulfuric acid and hydrogen peroxide, and thus the rate of deformation of the substrate W can be reduced. Therefore, the posture of the substrate W can be more reliably stabilized and hydrogen peroxide water equivalent to the replacement liquid can be supplied to the substrate W.

[0160] In the present embodiment, the sulfuric acid-containing liquid having a temperature higher than that of the substrate W is supplied to the substrate W, and then the replacement liquid having a temperature lower than that of the sulfuric acid-containing liquid is supplied to the substrate W. Then, the sulfuric acid-containing liquid is supplied to the substrate W again. If the high-temperature sulfuric acid-containing liquid is continuously supplied to the substrate W for a long time, members in contact with the substrate W such as the first chuck pins 22a and the second chuck pins 22b become high in temperature. If the sulfuric acid-containing liquid is replaced with the low-temperature replacement liquid and then the sulfuric acid-containing liquid is supplied again, the period during which the members in contact with the substrate W are high in temperature can be shortened.

[0161] In the present embodiment, while maintaining the rotational speed of the substrate W constant, the plurality of first chuck pins 22a and the plurality of second chuck pins 22b are switched between two of the fully closed state, the first closed state, and the second closed state. When the substrate W is accelerated in the rotational direction, the force applied to the substrate W increases. When the rotational speed of the substrate W is constant, the variation in the force applied to the substrate W with the rotation of the substrate W is small. In this state, the states of the plurality of first chuck pins 22a and the plurality of second chuck pins 22b are switched. Thereby, the posture of the substrate W can be more reliably stabilized and the sulfuric acid-containing liquid can be supplied to the substrate W.

[0162] In the present embodiment, while maintaining the rotation speed of the substrate W constant, a plurality of first chuck pins 22a or a plurality of second chuck pins 22b are separated from the end face of the substrate W. If a plurality of first chuck pins 22a or a plurality of second chuck pins 22b are separated from the end face of the substrate W, the force for holding the substrate W is weakened. At this time, as long as the rotation speed of the substrate W is maintained constant, the posture of the substrate W can be made more reliably stable, and the states of the plurality of first chuck pins 22a and the plurality of second chuck pins 22b can be switched.

[0163] In the present embodiment, a sulfuric acid-containing liquid is supplied to the substrate W that comes into contact with tangible objects such as the first chuck pins 22a and air but does not come into contact with liquid. If a sulfuric acid-containing liquid is supplied to the substrate W to which liquid is attached, the heat of the sulfuric acid-containing liquid is also transferred to the liquid attached to the substrate W, so the temperature rise of the substrate W is alleviated. If a sulfuric acid-containing liquid is supplied to the substrate W to which no liquid is attached, the temperature rise of the substrate W increases compared with the above case. Therefore, in the case of supplying a sulfuric acid-containing liquid to the substrate W that is not in contact with liquid, by bringing both the plurality of first chuck pins 22a and the plurality of second chuck pins 22b into contact with the end face of the substrate W, the posture of the substrate W can be made more reliably stable, and the sulfuric acid-containing liquid can be supplied to the substrate W.

[0164] In the present embodiment, the period during which both the plurality of first chuck pins 22a and the plurality of second chuck pins 22b are in contact with the end face of the substrate W when starting to supply the sulfuric acid-containing liquid is shorter than the period during which only the plurality of first chuck pins 22a or only the plurality of second chuck pins 22b are in contact with the end face of the substrate W. In other words, the period during which the plurality of first chuck pins 22a or the plurality of second chuck pins 22b are separated from the end face of the substrate W is lengthened. Thereby, the period during which the sulfuric acid-containing liquid is supplied to the portion of the end face of the substrate W that is in contact with the first chuck pin 22a or the second chuck pin 22b can be lengthened.

[0165] In the present embodiment, the period in the fully closed state when starting to supply the sulfuric acid-containing liquid is longer than the period in the fully closed state during the process of supplying the sulfuric acid-containing liquid. Since the period in the fully closed state when starting to supply the sulfuric acid-containing liquid is longer, the plurality of first chuck pins 22a and the plurality of second chuck pins 22b can be switched from the fully closed state to the first closed state in a state where the rate of change of the temperature of the substrate W is small. Moreover, since the period in the fully closed state during the process of supplying the sulfuric acid-containing liquid is short, that is, the period from when the plurality of first chuck pins 22a and the plurality of second chuck pins 22b are switched from the first closed state to the second closed state is short, the period during which the sulfuric acid-containing liquid is supplied to the portion of the end face of the substrate W that is in contact with the first chuck pin 22a or the second chuck pin 22b can be lengthened.

[0166] Next, other embodiments will be described.

[0167] Sulfuric acid-containing liquids such as SPM can be supplied to the lower surface and the end surface of the substrate W, or can also be supplied to the upper surface, the lower surface, and the end surface of the substrate W. In this case, it is only necessary to spray the sulfuric acid-containing liquid onto the lower surface nozzle 35.

[0168] Sulfuric acid and hydrogen peroxide water can also be externally mixed outside the chemical liquid nozzle 27 instead of being mixed inside the chemical liquid nozzle 27. For example, sulfuric acid and hydrogen peroxide water can be mixed in a pipe and then supplied to the chemical liquid nozzle 27. In this case, sulfuric acid and hydrogen peroxide water can also be mixed inside the chamber 12, or can be mixed outside the chamber 12.

[0169] If the temperature difference between the sulfuric acid-containing liquid such as SPM and the replacement liquid such as hydrogen peroxide water is small, the replacement liquid can also be supplied to the substrate W in the first closed state or the second closed state.

[0170] The rotation speed of the substrate W when starting to supply the replacement liquid to the substrate W can also be equal to or lower than the rotation speed of the substrate W when supplying the sulfuric acid-containing liquid such as SPM to the substrate W.

[0171] While increasing or decreasing the rotation speed of the substrate W, the plurality of first chuck pins 22a and the plurality of second chuck pins 22b can also be switched between two of the fully closed state, the first closed state, and the second closed state.

[0172] The sulfuric acid-containing liquid can also be supplied to the substrate W with liquid attached thereto without supplying the sulfuric acid-containing liquid such as SPM to the substrate W without liquid attached. In this way, the heat of the sulfuric acid-containing liquid is also transferred to the liquid attached to the substrate W, and therefore, the rate of increase in the temperature of the substrate W can be decreased.

[0173] The number of chuck pins 22 in contact with the end surface of the substrate W can also be changed not only when supplying the sulfuric acid-containing liquid such as SPM to the substrate W, but also when supplying liquids other than the sulfuric acid-containing liquid such as hydrogen peroxide water, warm water, and rinse liquid to the substrate W.

[0174] If the holding portion 63g is in a shape extending in the circumferential direction of the substrate W along the end surface of the substrate W, the number of the plurality of first chuck pins 22a can also be 2 instead of 3 or more. Similarly, if the holding portion 63g is in a shape extending in the circumferential direction of the substrate W along the end surface of the substrate W, the number of the plurality of second chuck pins 22b can also be 2 instead of 3 or more. For example, when the substrate W is circular, if the holding portion 63g is in an arc shape along the end surface of the substrate W, the number of at least one of the plurality of first chuck pins 22a and the plurality of second chuck pins 22b can also be 2.

[0175] The substrate processing apparatus 1 is not limited to an apparatus for processing a disc-shaped substrate W, and may also be an apparatus for processing a polygonal substrate W.

[0176] It is also possible to combine two or more of all the configurations described above. It is also possible to combine two or more of all the processes described above.

[0177] The embodiments of the present invention have been described in detail, but these are only specific examples for clarifying the technical content of the present invention. The present invention should not be construed as being limited to these specific examples, and the concept and scope of the present invention are defined only by the appended claims.

[0178] Explanation of reference numerals:

[0179] 1: Substrate processing apparatus

[0180] 2: Processing unit

[0181] 3: Control device

[0182] 3a: Computer main body

[0183] 3b: CPU

[0184] 3c: Memory

[0185] 3d: Peripheral device

[0186] 3e: Storage device

[0187] 3f: Reader

[0188] 3g: Communication device

[0189] 4: Transfer path

[0190] 5: Transfer system

[0191] 6: Relay station

[0192] 6L: Lower relay station

[0193] 6u: Upper relay station

[0194] 7: Relay station for unprocessed substrates

[0195] 8: Relay station for processed substrates

[0196] 11: FFU

[0197] %12: Chamber

[0198] 13: Partition wall

[0199] 13a: Air outlet

[0200] 13b: Loading / unloading port

[0201] 17: Gate

[0202] 18: Rectifying plate

[0203] 21: Rotary chuck

[0204] 22: Chuck pin

[0205] 22a: First chuck pin

[0206] 22b: Second chuck pin

[0207] 23: Rotary base

[0208] 24: Rotating shaft

[0209] 25: Electric motor

[0210] 26: Chuck housing

[0211] 27: Liquid medicine nozzle

[0212] 28f: Flow adjustment valve

[0213] 28p: Sulfuric acid pipe

[0214] 28v: Sulfuric acid valve

[0215] 29f: Flow adjustment valve

[0216] 29p: Hydrogen peroxide water pipe

[0217] 29v: Hydrogen peroxide water valve

[0218] 30: First nozzle moving unit

[0219] 31: Flushing liquid nozzle

[0220] 32p: Pure water pipe

[0221] 32v: Pure water valve

[0222] 33h: Heater

[0223] 33p: Warm water pipe

[0224] 33v: Warm water valve

[0225] 34: Second nozzle moving unit

[0226] 35: Lower surface nozzle

[0227] 36p: Flushing liquid pipe

[0228] 36v: Flushing liquid valve

[0229] 41: Processing cup

[0230] 42: Cylindrical outer wall

[0231] 43: Cup

[0232] 44: Baffle

[0233] 44u: Upper end

[0234] 45: Cylindrical part

[0235] 46: Top

[0236] 47: Baffle lifting unit

[0237] 48: Spacer

[0238] 49: Exhaust pipe

[0239] 49u: Upstream end

[0240] 51: Sulfuric acid supply system

[0241] 52: Sulfuric acid tank

[0242] 53: Circulation pipe

[0243] 53c: Common pipe

[0244] 53i: Independent pipe

[0245] 54d: Downstream heater

[0246] 54u: Upstream heater

[0247] 55: Circulation pump

[0248] 56: Concentration meter

[0249] 57: Flow meter

[0250] 58p: Return pipe

[0251] 58v: Return valve

[0252] 61a: First actuator

[0253] 61b: Second actuator

[0254] 62a: First power transmission path

[0255] 62b: Second power transmission path

[0256] 63g: Gripping part

[0257] 63s: Support part

[0258] A1: Axis of rotation

[0259] A2: Axis of rotation

[0260] CA: Carrier

[0261] CC: Cabinet

[0262] CR: Central Robot

[0263] CRL: Lower Central Robot

[0264] CRu: Upper Central Robot

[0265] FB: Fluid Box

[0266] Hc: Hand

[0267] Hi: Hand

[0268] IR: Indexing Manipulator

[0269] LP: Loading Port

[0270] P: Program

[0271] RM: Removable Medium

[0272] S1~S6: Steps

[0273] SL: Lower Space

[0274] Su: Upper Space

[0275] T1: First Liquid Medicine Supply Time

[0276] T2: Second Liquid Medicine Supply Time

[0277] T3: Third Liquid Medicine Supply Time

[0278] T4: Fourth Liquid Medicine Supply Time

[0279] T5: Fifth Liquid Medicine Supply Time

[0280] T6: Displacement Liquid Supply Time

[0281] T7: Flushing Liquid Supply Time

[0282] T8: Flushing Liquid Supply Time

[0283] TW: Tower

[0284] W: Substrate

[0285] X: First Rotation Speed

[0286] Y: Second Rotation Speed

Claims

1. A substrate processing method, Among them, including: a first splitting process, in a fully closed state where a plurality of first chuck pins and a plurality of second chuck pins are in contact with the end face of a horizontal substrate, while rotating the substrate, starting and continuously supplying a sulfuric acid-containing liquid having a temperature higher than that of the substrate to the substrate; a second splitting process, by separating a plurality of the second chuck pins from the end face of the substrate, in a first closed state where a plurality of the first chuck pins are in contact with the end face of the substrate and a plurality of the second chuck pins are separated from the end face of the substrate, while rotating the substrate, supplying the sulfuric acid-containing liquid to the substrate; a third splitting process, by bringing a plurality of the second chuck pins into contact with the end face of the substrate, in the fully closed state, while rotating the substrate, supplying the sulfuric acid-containing liquid to the substrate; and a fourth splitting process, by separating a plurality of the first chuck pins from the end face of the substrate, in a second closed state where a plurality of the first chuck pins are separated from the end face of the substrate and a plurality of the second chuck pins are in contact with the end face of the substrate, while rotating the substrate, supplying the sulfuric acid-containing liquid to the substrate.

2. The substrate processing method according to claim 1, wherein, further including: a fifth splitting process, by bringing a plurality of the first chuck pins into contact with the end face of the substrate, in the fully closed state, while rotating the substrate, supplying the sulfuric acid-containing liquid to the substrate; and a displacement liquid supply process, in the fully closed state, while rotating the substrate, replacing the sulfuric acid-containing liquid in contact with the substrate with a displacement liquid having a temperature lower than that of the sulfuric acid-containing liquid.

3. The substrate processing method according to claim 2, wherein, the rotation speed of the substrate when starting to replace the sulfuric acid-containing liquid in contact with the substrate with the displacement liquid is greater than the rotation speed of the substrate in at least one of the first splitting process, the second splitting process, the third splitting process, and the fourth splitting process.

4. The substrate processing method according to claim 2 or 3, wherein, the displacement liquid is hydrogen peroxide water having a temperature lower than that of the sulfuric acid-containing liquid.

5. The substrate processing method according to claim 2 or 3, wherein, after replacing the sulfuric acid-containing liquid in contact with the substrate with the displacement liquid, the first splitting process, the second splitting process, the third splitting process, and the fourth splitting process are performed again.

6. The substrate processing method according to any one of claims 1 to 3, wherein, while maintaining the rotation speed of the substrate constant, performing at least one of the switching from the first splitting process to the second splitting process, the switching from the second splitting process to the third splitting process, and the switching from the third splitting process to the fourth splitting process.

7. The substrate processing method according to claim 6, wherein, While maintaining the rotational speed of the substrate constant, at least one of the switching from the first dividing step to the second dividing step and the switching from the third dividing step to the fourth dividing step is performed.

8. The substrate processing method according to any one of claims 1 to 3, wherein the first dividing step includes the following steps: while the plurality of first chuck pins and the plurality of second chuck pins are in contact with the end face of the substrate and the liquid is not in contact with the substrate, while rotating the substrate, start supplying the sulfuric acid-containing liquid to the substrate.

9. The substrate processing method according to any one of claims 1 to 3, wherein the period of the first dividing step is shorter than the period of the second dividing step and shorter than the period of the fourth dividing step.

10. The substrate processing method according to any one of claims 1 to 3, wherein the period of the first dividing step is longer than the period of the third dividing step.

11. A substrate processing apparatus, wherein it has: a plurality of first chuck pins that hold the substrate by contacting the end face of the horizontal substrate; a plurality of second chuck pins that hold the substrate by contacting the end face of the substrate; a first actuator that moves each of the plurality of first chuck pins between an open position where the first chuck pin is separated from the end face of the substrate and a closed position where the first chuck pin is in contact with the end face of the substrate; a second actuator that moves each of the plurality of second chuck pins between an open position where the second chuck pin is separated from the end face of the substrate and a closed position where the second chuck pin is in contact with the end face of the substrate; an electric motor that rotates the substrate held by at least one of the plurality of first chuck pins and the plurality of second chuck pins; a nozzle that supplies a sulfuric acid-containing liquid having a temperature higher than that of the substrate to the substrate held by at least one of the plurality of first chuck pins and the plurality of second chuck pins; a valve that switches between a supply execution state in which the sulfuric acid-containing liquid is supplied to the nozzle and a supply stop state in which the supply of the sulfuric acid-containing liquid to the nozzle is stopped; and a control device that controls the first actuator, the second actuator, the electric motor, and the valve; the control device performs the following steps: a first dividing step, while the plurality of first chuck pins and the plurality of second chuck pins are in a fully closed state in contact with the end face of the substrate, while rotating the substrate, start and continue to supply the sulfuric acid-containing liquid to the substrate; a second dividing step, by separating the plurality of second chuck pins from the end face of the substrate, in a first closed state in which the plurality of first chuck pins are in contact with the end face of the substrate and the plurality of second chuck pins are separated from the end face of the substrate, while rotating the substrate, supply the sulfuric acid-containing liquid to the substrate; Third splitting process, in the fully closed state, while rotating the substrate, supply the sulfuric acid-containing liquid to the substrate by bringing a plurality of the second chuck pins into contact with the end face of the substrate; And Fourth splitting process, in the second closed state where a plurality of the first chuck pins are separated from the end face of the substrate and a plurality of the second chuck pins are in contact with the end face of the substrate, while rotating the substrate, supply the sulfuric acid-containing liquid to the substrate.

Images