A system and method for continuous production of silicon-carbon negative electrode material based on vapor deposition method

Abstract

The application discloses a kind of based on continuous production silicon-carbon negative electrode material of gas deposition method system and method, characterized by including from top to bottom sequentially connected first silane gas deposition reactor, second silane gas deposition reactor, reaction product spiral air cooler and reaction product spiral water cooler, the top of first silane gas deposition reactor is connected with graphite feed bin, the bottom of reaction product spiral water cooler is connected with product bin;Hydrogen cylinder is connected with reaction product spiral air cooler and reaction product spiral water cooler respectively, nitrogen cylinder is connected with second silane gas deposition reactor and reaction product spiral water cooler respectively, silane cylinder is sequentially connected with the upper gas inlet of second silane gas deposition reactor by gas heat exchanger and gas preheater, the upper gas outlet of second silane gas deposition reactor is connected with the upper reflux port of first silane gas deposition reactor, advantage is to realize the uniform deposition of deposition source on substrate, and realize continuous production.

Description

A system and method for continuous production of silicon-carbon anode materials based on chemical vapor deposition. Technical Field

[0001] This invention relates to a method for producing silicon-carbon anode materials by vapor deposition, and more particularly to a system and method for the continuous production of silicon-carbon anode materials based on vapor deposition. Background Technology

[0002] Currently, the main production methods for silicon-carbon anode materials include the sol-gel method, mechanical ball milling, hydrothermal synthesis, and chemical vapor deposition. The sol-gel method allows for uniform dispersion of silicon in silicon / carbon composites, and the resulting composites maintain high reversible specific capacity and cycling performance. However, carbon gels exhibit poor stability compared to other carbon materials; during cycling, cracks form in the carbon shell and gradually expand, leading to anode structural breakage and reduced performance. Furthermore, excessive oxygen content in the gel generates a large amount of non-conductive SiO, further reducing the cycling performance of the anode material. Mechanical ball milling produces composites with small particle size and uniform component distribution, but because this method involves mixing two reactants under mechanical force, particle agglomeration remains a challenge. The hydrothermal synthesis method typically uses small-molecule organic compounds as the carbon source. These are ultrasonically dispersed with silicon powder in a solution, followed by a hydrothermal reaction in a sealed high-pressure reactor, and then carbonized at high temperature to obtain the silicon / carbon composite material. Hydrothermal synthesis is simple to operate, produces high-purity products with good dispersibility and easily controllable particle size; however, it is energy-intensive and has low yield, making it unsuitable for mass production. Chemical vapor deposition (CVD) is used to prepare silicon / carbon composites. Silicon sources include elemental silicon (SiH4), nano-silicon powder, SBA-15, and diatomaceous earth, while carbon or organic matter serves as the carbon source. One component acts as the matrix, and the other is uniformly deposited on its surface to obtain the composite material. Composites prepared using this method exhibit strong bonding between the silicon and carbon components, preventing active material detachment during charge / discharge processes. They demonstrate excellent cycle stability and higher initial coulombic efficiency. The carbon layer is uniform and stable, and agglomeration is less likely. For industrial applications, this method offers simple equipment, produces composites with few impurities, and has an environmentally friendly reaction process, making it the most promising method for large-scale production.

[0003] The traditional vapor deposition method for producing silicon carbide materials currently used employs a rotary kiln system, which is a batch reaction, limiting its application in large-scale production. Furthermore, the rotary kiln system relies on motor circulation for material mixing, which can lead to agglomeration of the produced silicon carbide materials and the generation of large amounts of intangible silicon, affecting the electrochemical performance of the materials. Traditional rotary kiln reactors are inefficient, produce poor product quality, and result in products with low dispersion and a high agglomeration rate. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide a system and method for the continuous production of silicon-carbon anode materials based on vapor deposition, which has high product dispersibility, low agglomeration ratio, and can be produced continuously and efficiently.

[0005] The technical solution adopted by the present invention to solve the above-mentioned technical problems is as follows: a system for continuous production of silicon-carbon anode materials based on vapor deposition, comprising a first silane vapor deposition reactor, a second silane vapor deposition reactor, a reaction product spiral air cooler, a reaction product spiral water cooler, a hydrogen cylinder, a nitrogen cylinder, and a silane cylinder.

[0006] The top of the first silane vapor deposition reactor is connected to a graphite feed hopper. The bottom outlet of the first silane vapor deposition reactor is connected to the top inlet of the second silane vapor deposition reactor. The bottom outlet of the second silane vapor deposition reactor is connected to the top inlet of the reaction product spiral air cooler. The bottom outlet of the reaction product spiral air cooler is connected to the top inlet of the reaction product spiral water cooler. The bottom of the reaction product spiral water cooler is connected to a product hopper.

[0007] The hydrogen cylinder is connected to the reaction product spiral air cooler and the reaction product spiral water cooler, respectively. The nitrogen cylinder is connected to the second silane vapor deposition reactor and the reaction product spiral water cooler, respectively. The silane cylinder is connected to the upper inlet of the second silane vapor deposition reactor in sequence through a gas heat exchanger and a gas preheater. The upper outlet of the second silane vapor deposition reactor is connected to the upper reflux port of the first silane vapor deposition reactor. The upper outlet of the first silane vapor deposition reactor is connected to the gas preheater in sequence through a cyclone separator, the gas heat exchanger, a filter assembly, and a circulating fan.

[0008] Furthermore, a weighing module is provided on the graphite feed hopper, and a star feeder is provided at the bottom of the graphite feed hopper.

[0009] Furthermore, the filter assembly adopts three sets of metal sintered powder filters arranged in parallel. The metal sintered powder filters are equipped with an automatic backflushing program to improve the service life of the filters. The backflushing gas is nitrogen. When the pressure difference between the inside and outside of the filter tube increases to 30-60 kPa, the backflushing program is automatically activated and the standby filter is put into use.

[0010] Furthermore, both the first silane vapor deposition reactor and the second silane vapor deposition reactor are spiral propulsion reactors. Several sets of spiral blades are evenly arranged on the central rotating shaft of the spiral propulsion reactor. The ends of the spiral blades are provided with a tipping hopper to prevent material from depositing at the bottom of the reactor. The tipping hopper can make the material in the entire reaction system mix evenly.

[0011] This invention also provides a method for continuous production of silicon-carbon anode materials using the above-described system based on vapor deposition, comprising the following steps:

[0012] Step 1, Gas Replacement System: First, replace the entire system with nitrogen to reduce the oxygen content to less than 0.5%. Then, replace the entire system with hydrogen to reduce the hydrogen content to 95-99%. Control the system pressure to 10-50 kPaG through the H2 gas source outlet valve.

[0013] Step 2, Gas Phase Circulation and Heating: Turn on the gas preheater and circulation fan to circulate hydrogen in the system and raise the temperature to 400-450℃;

[0014] Step 3: Reactor heating: The reaction temperature of the first silane vapor deposition reactor is controlled at 400-450℃, and the reaction pressure is controlled at 10-200 kPaG; the reaction temperature of the second silane vapor deposition reactor is controlled at 450-550℃, and the reaction pressure is controlled at 10-200 kPaG; the temperature of the spiral air cooler for the reaction product is controlled at 100-150℃, and the pressure is controlled at 10-100 kPaG, with the atmosphere inside the reactor controlled as hydrogen, in order to ensure complete reaction of the material in the residual silane gas; the temperature of the spiral water cooler for the reaction product is controlled at 50-80℃, and the pressure is controlled at 10-100 kPaG, with the atmosphere inside the reactor controlled as nitrogen.

[0015] Step 4: Replenishment of source gas for deposition and gas-phase deposition reaction:

[0016] A. The graphite powder in the graphite supply bin is quantitatively fed into the first silane vapor deposition reactor by a star feeder through a weighing module. The material in the first silane vapor deposition reactor is then pushed into the second silane vapor deposition reactor as the blades inside the reactor advance.

[0017] B. Control the silane entering the second silane vapor deposition reactor to make its content in the system gas 5%-10%mol. After the silane raw material gas is heated by heat exchange through a gas heat exchanger, it enters the gas preheater for preheating and then enters the second silane vapor deposition reactor to react countercurrently with graphite powder. At this time, SiH4 is deposited on the surface of the material, and Si is deposited on the surface of graphite molecules. The silane gas in the second silane vapor deposition reactor continues to enter the first silane vapor deposition reactor to continue to react with graphite powder until the reaction is complete.

[0018] C. The reaction products in the second silane vapor deposition reactor are continued to be pushed to the reaction product spiral air cooler. The material is then pushed from the reaction product spiral air cooler to the reaction product spiral water cooler for further cooling before entering the product silo.

[0019] Furthermore, in step 4B, the hydrogen-dominated gas in the first silane vapor deposition reactor is sent to a cyclone separator, then to a gas heat exchanger for cooling, and finally to a filter assembly to remove solid impurities before entering a circulating fan. Most of the gas from the circulating fan outlet is recycled back to the second silane vapor deposition reactor, while some is vented.

[0020] Compared with the prior art, the advantages of the present invention are as follows:

[0021] 1. The traditional intermittent operation method has been abandoned, and the entire system is for continuous production;

[0022] 2. Adjustable according to actual production conditions. The reaction temperature and residence time of the two spiral propeller reactors can be adjusted independently, allowing for better control of the entire reaction process;

[0023] 3. The second silane vapor deposition reactor is the main reactor of the entire reaction system. The reaction temperature is 450-500℃. The main reaction occurs in the second silane vapor deposition reactor, where silane deposition occurs. Unreacted silane gas enters the first silane vapor deposition reactor to continue the reaction. The temperature in the first silane vapor deposition reactor is 400-450℃. The reaction gas and the reaction solid are in countercurrent contact. The purpose is to make the entire vapor deposition reaction more uniform in the reactor and to enable continuous production.

[0024] 4. The reaction product spiral air cooler (100-150℃) allows the small amount of silane gas carried in the reactor material to continue reacting while gradually cooling the reactants. The reaction product spiral water cooler (50-80℃) maintains a nitrogen atmosphere within the reactor to gradually cool the reactants, preparing for continuous system discharge. The entire reaction system employs a step-by-step cooling process, first air cooling followed by water cooling spiral cooling, to better control the reaction shutdown process and suppress the formation of byproducts.

[0025] 5. The filter adopts a metal sintered powder filter and three sets are set in parallel. An automatic backflushing program is set to improve the service life of the filter. Nitrogen is used for backflushing. When the pressure difference between the inside and outside of the filter tube increases to 30-60 kPa, the backflushing program is automatically started and the standby filter is put into use.

[0026] 6. The spiral reactor has multiple sets of blades on its shaft. The blade spacing can be adjusted according to different reaction mechanisms, allowing for the installation of different blades and adjustment of the motor speed, thus better controlling the residence time of the reaction. A tipping hopper is installed at the tip of the blades to prevent material from settling at the bottom of the reactor. As the tipping hopper rises with the blades, the material falls from it, ensuring uniform mixing, preventing material agglomeration, and resulting in more uniform vapor deposition of silane.

[0027] In summary, this invention provides a system and method for the continuous production of silicon-carbon anode materials based on vapor deposition. Using graphite as the substrate (artificial or natural graphite) and SiH4 as the silicon deposition source, the reaction is carried out in a helical propulsion reactor. The reactor's unique structure and reaction system enable uniform deposition of the deposition source on the substrate, achieving continuous production. The deposition source is not limited to silane; it can also be one or more of disilane, propane, or other silicon-containing gases. Attached Figure Description

[0028] Figure 1 is a schematic diagram of the system for continuous production of silicon-carbon anode materials based on vapor deposition according to the present invention.

[0029] Figure 2 is a schematic diagram of the filter structure of the present invention;

[0030] Figure 3 is a schematic diagram of the spiral propulsion reactor structure of the present invention;

[0031] Figure 4 is a schematic diagram of the spiral blade structure of the present invention. The following labels are used in the figure: 1-graphite feed hopper, 2-weighing module, 3-star feeder, 4-first silane vapor deposition reactor, 5-second silane vapor deposition reactor, 6-reaction product spiral air cooler, 7-reaction product spiral water cooler, 8-product hopper, 9-hydrogen cylinder, 10-nitrogen cylinder, 11-silane cylinder, 12-gas preheater, 13-cyclone separator, 14-gas heat exchanger, 15-filter assembly, 16-circulating fan, 17-blade, 18-tilting hopper. Detailed Implementation

[0032] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments.

[0033] Specific Implementation Example 1: A system for continuous production of silicon-carbon anode materials based on vapor deposition.

[0034] As shown in Figure 1, the system for continuous production of silicon-carbon anode materials based on vapor deposition includes a first silane vapor deposition reactor 3, a second silane vapor deposition reactor 5, a reaction product spiral air cooler 6, a reaction product spiral water cooler 7, a hydrogen cylinder 9, a nitrogen cylinder 10, and a silane cylinder 11. A graphite feed hopper 1 is connected to the top of the first silane vapor deposition reactor 3. The bottom outlet of the first silane vapor deposition reactor 3 is connected to the top inlet of the second silane vapor deposition reactor 5. The bottom outlet of the second silane vapor deposition reactor 5 is connected to the top inlet of the reaction product spiral air cooler 6. The bottom outlet of the reaction product spiral air cooler 6 is connected to the top inlet of the reaction product spiral water cooler 7. The bottom of the product spiral water cooler 7 is connected to the product hopper 8. The hydrogen cylinder 9 is connected to the reaction product spiral air cooler 6 and the reaction product spiral water cooler 7 respectively. The nitrogen cylinder 10 is connected to the second silane vapor deposition reactor 5 and the reaction product spiral water cooler 7 respectively. The silane cylinder 11 is connected to the upper inlet of the second silane vapor deposition reactor 5 through the gas heat exchanger 14 and the gas preheater 12 in sequence. The upper outlet of the second silane vapor deposition reactor 5 is connected to the upper reflux port of the first silane vapor deposition reactor 3. The upper outlet of the first silane vapor deposition reactor 3 is connected to the gas preheater 12 through the cyclone separator 13, the gas heat exchanger 14, the filter assembly 15, and the circulating fan 16 in sequence.

[0035] In this specific embodiment, a weighing module 2 is installed on the graphite feed hopper 1, and a star feeder 3 is installed at the bottom of the graphite feed hopper 1. As shown in Figure 2, the filter assembly 15 adopts three sets of parallel metal sintered powder filters. The metal sintered powder filters are equipped with an automatic backflushing program to improve the service life of the filters. Nitrogen is used for backflushing. When the pressure difference between the inside and outside of the filter tube increases to 30-60 kPa, the backflushing program is automatically activated, and the standby filter is put into use. As shown in Figures 3 and 4, the first silane vapor deposition reactor 3 and the second silane vapor deposition reactor 5 are both helical propulsion reactors. Several sets of blades 17 are evenly arranged on the central rotating shaft of the helical propulsion reactor. The ends of the blades 17 are equipped with tipping hoppers 18 to prevent material from depositing at the bottom of the reactor.

[0036] Specific Embodiment Two: A method for continuous production of silicon-carbon anode materials using the system of Specific Embodiment One based on vapor deposition, comprising the following steps:

[0037] Step 1, Gas Replacement System: First, replace the entire system with nitrogen to reduce the oxygen content to less than 0.5%. Then, replace the entire system with hydrogen to reduce the hydrogen content to 95-99%. Control the system pressure to 10-50 kPaG through the H2 gas source outlet valve.

[0038] Step 2, Gas Phase Circulation and Heating: Turn on the gas preheater 12 and the circulating fan 16 to circulate hydrogen in the system and raise the temperature to 400-450℃.

[0039] Step 3: Reactor heating: The reaction temperature of the first silane vapor deposition reactor 3 is controlled at 400-450℃, and the reaction pressure is controlled at 10-200 kPaG; the reaction temperature of the second silane vapor deposition reactor 5 is controlled at 450-550℃, and the reaction pressure is controlled at 10-200 kPaG; the temperature of the reaction product spiral air cooler 6 is controlled at 100-150℃, and the pressure is controlled at 10-100 kPaG, with the atmosphere inside the reactor controlled as hydrogen, in order to ensure that the material reacts completely in the residual silane gas; the temperature of the reaction product spiral water cooler 7 is controlled at 50-80℃, and the pressure is controlled at 10-100 kPaG, with the atmosphere inside the reactor controlled as nitrogen.

[0040] Step 4: Replenishment of source gas for deposition and gas-phase deposition reaction:

[0041] A. The graphite powder in the graphite supply bin is quantitatively fed into the first silane vapor deposition reactor 3 by the star feeder 3 through the weighing module 2. Silane gas is deposited on the surface of the graphite powder at high temperature. The material in the first silane vapor deposition reactor 3 is pushed to the second silane vapor deposition reactor 5 by the advancement of the blades in the reactor.

[0042] B. Because the deposition process consumes silane gas, SiH4→Si + 2H2, therefore, silane gas needs to be continuously replenished in the system. The silane content entering the second silane vapor deposition reactor 5 is controlled to be 5%-10% mol in the system gas. After the fresh silane feed gas is heated by heat exchanger 14, it enters the gas preheater 12 for preheating and then enters the second silane vapor deposition reactor 5 to react countercurrently with graphite powder. At this time, SiH4 is deposited on the surface of the material, and Si is deposited on the surface of graphite molecules. The silane gas in the second silane vapor deposition reactor 5 continues to enter the first silane vapor deposition reactor 3 to continue the reaction until the reaction is complete. The gas in the first silane vapor deposition reactor 3, which is mainly composed of hydrogen, is sent to cyclone separator 13, then to gas heat exchanger 14 for cooling, and then to filter assembly 15 to remove solid impurities in the gas before entering the circulating fan 16 for circulation. This is because some excess hydrogen and other impurity gases are generated during the reaction, such as side reactions 2SiH4→Si2H6+H2, 2Si2H6→Si3H8+ SiH4, therefore most of the gas at the outlet of circulating fan 16 is circulated back to the system, and part is vented.

[0043] C. In the second silane vapor deposition reactor 5, the silane gas continues to decompose and deposit on the surface of the material. The reaction products in the second silane vapor deposition reactor 5 are continued to be pushed to the reaction product spiral air cooler 6. The material is then pushed from the reaction product spiral air cooler 6 to the reaction product spiral water cooler 7 for further cooling before entering the product silo 8.

[0044] Specific Implementation Example 3: Application of continuous production of silicon-carbon anode materials using the system of Specific Implementation Example 1.

[0045] Example 1: Annual production of 2000t silicon-carbon anode material.

[0046] The natural graphite feed rate is 230 kg / h, and the hourly replenishment of silane gas is 17 Nm³. 3 The reaction gas contains 5 mol% silane, with the remainder being hydrogen. The pressure of the first silane vapor deposition reactor 3 is 100 kPaG, and the temperature is 500℃. The pressure of the second silane vapor deposition reactor 5 is 100 kPaG, and the temperature is 450℃. The pressure of the reaction product spiral air cooler 6 is 80 kPaG, and the temperature is 120℃. The pressure of the reaction product spiral water cooler 7 is 60 kPaG, and the temperature is 70℃. The first silane vapor deposition reactor 3 and the second silane vapor deposition reactor 5 have the same dimensional parameters: a diameter of 200 mm, a length of 2000 mm, a rotation speed of 10 rpm, a pitch of 50 mm, and an included angle of 30° within the diameter of the blades 17. The Si deposition content in the graphite in the product silo 8 is detected to be 10%. The product deposition is uniform, highly dispersible, with a small agglomeration ratio, and the system maintains stable and continuous production.

[0047] Example 2: Annual production of 1000t silicon-carbon anode material.

[0048] The natural graphite feed rate is 115 kg / h, and the hourly replenishment of silane gas is 10 Nm³. 3 The reaction gas contains 10 mol% silane, with the remainder being hydrogen. The pressure of the first silane vapor deposition reactor 3 is 100 kPaG, and the temperature is 450℃. The pressure of the second silane vapor deposition reactor 5 is 100 kPaG, and the temperature is 410℃. The pressure of the reaction product spiral air cooler 6 is 80 kPaG, and the temperature is 120℃. The pressure of the reaction product spiral water cooler 7 is 60 kPaG, and the temperature is 70℃. The first silane vapor deposition reactor 3 and the second silane vapor deposition reactor 5 have the same dimensions: a diameter of 200 mm, a length of 2000 mm, a rotation speed of 10 rpm, a pitch of 60 mm, and an included angle of 22.5° within the diameter of the blades 17. The Si deposition content in the graphite in the output was detected to be 6%. The product deposition was uniform, highly dispersible, with a small agglomeration ratio, and the system maintained stable and continuous production.

[0049] The foregoing description is not intended to limit the invention, nor is the invention limited to the examples given. Any changes, modifications, additions, or substitutions made by those skilled in the art within the scope of the invention should also be considered within the protection scope of the invention.

Claims

1. A system for continuous production of silicon-carbon anode materials based on chemical vapor deposition, characterized in that... The system includes a first silane vapor deposition reactor, a second silane vapor deposition reactor, a reaction product spiral air cooler, a reaction product spiral water cooler, hydrogen cylinders, nitrogen cylinders, and silane cylinders. The top of the first silane vapor deposition reactor is connected to a graphite feed hopper. The bottom outlet of the first silane vapor deposition reactor is connected to the top inlet of the second silane vapor deposition reactor. The bottom outlet of the second silane vapor deposition reactor is connected to the top inlet of the reaction product spiral air cooler. The bottom outlet of the reaction product spiral air cooler is connected to the top inlet of the reaction product spiral water cooler. The bottom of the reaction product spiral water cooler is connected to a graphite feed hopper. The material storage silo; the hydrogen cylinders are connected to the reaction product spiral air cooler and the reaction product spiral water cooler respectively; the nitrogen cylinders are connected to the second silane vapor deposition reactor and the reaction product spiral water cooler respectively; the silane cylinders are connected to the upper inlet of the second silane vapor deposition reactor in sequence through a gas heat exchanger and a gas preheater; the upper outlet of the second silane vapor deposition reactor is connected to the upper reflux outlet of the first silane vapor deposition reactor; the upper outlet of the first silane vapor deposition reactor is connected to the gas preheater in sequence through a cyclone separator, the gas heat exchanger, a filter assembly, and a circulating fan.

2. The system for continuous production of silicon-carbon anode materials based on vapor deposition according to claim 1, characterized in that: The graphite feed hopper is equipped with a weighing module, and a star feeder is installed at the bottom of the graphite feed hopper.

3. The system for continuous production of silicon-carbon anode materials based on vapor deposition according to claim 1, characterized in that: The filter assembly consists of three sets of metal sintered powder filters connected in parallel, and the metal sintered powder filters are equipped with an automatic backflushing program.

4. The system for continuous production of silicon-carbon anode materials based on vapor deposition according to claim 1, characterized in that: Both the first silane vapor deposition reactor and the second silane vapor deposition reactor are helical propulsion reactors. Several sets of helical blades are evenly arranged on the central rotating shaft of the helical propulsion reactor, and the ends of the helical blades are provided with a tipping hopper to prevent material from depositing at the bottom of the reactor.

5. A method for continuous production of silicon-carbon anode materials using the system of claim 1 via vapor deposition, characterized in that... Includes the following steps: Step 1, Gas Replacement System: First, replace the entire system with nitrogen to reduce the oxygen content to less than 0.5%. Then, replace the entire system with hydrogen to reduce the hydrogen content to 95-99%. Control the system pressure to 10-50 kPaG through the H2 gas source outlet valve. Step 2, Gas Phase Circulation and Heating: Turn on the gas preheater and circulating fan to circulate hydrogen in the system and raise the temperature to 400-450℃. Step 3, Reactor Heating: Increase the reaction temperature of the first silane vapor deposition reactor. The reaction temperature in the first reactor is controlled at 400-450℃, and the reaction pressure at 10-200 kPaG. The reaction temperature in the second silane vapor deposition reactor is controlled at 450-550℃, and the reaction pressure at 10-200 kPaG. The temperature in the spiral air cooler for the reaction product is controlled at 100-150℃, and the pressure at 10-100 kPaG, with the atmosphere inside the reactor controlled to be hydrogen. The temperature in the spiral water cooler for the reaction product is controlled at 50-80℃, and the pressure at 10-100 kPaG, controlling the reaction... The atmosphere inside the reactor is nitrogen; Step 4, replenishment of the deposition source gas and vapor phase deposition reaction: A. Graphite powder in the graphite supply silo is quantitatively fed into the first silane vapor phase deposition reactor by a star feeder through a weighing module. The material in the first silane vapor phase deposition reactor is then pushed to the second silane vapor phase deposition reactor by the propulsion of the blades in the reactor; B. The silane entering the second silane vapor phase deposition reactor is controlled so that its content in the system gas is 5%-10%mol. The silane source gas is heated by heat exchange through a gas heat exchanger, then preheated in a gas preheater before entering the second silane vapor phase deposition reactor to react countercurrently with the graphite powder. Si is deposited on the surface of the graphite molecules. The silane gas in the second silane vapor phase deposition reactor continues to enter the first silane vapor phase deposition reactor to continue reacting with the graphite powder until the reaction is complete; C. The reaction products in the second silane vapor phase deposition reactor are continued to be pushed to the reaction product spiral air cooler. The material is then pushed from the reaction product spiral air cooler to the reaction product spiral water cooler for further cooling before entering the product silo.

6. The method for continuous production of silicon-carbon anode materials based on vapor deposition according to claim 5, characterized in that: In step 4B, the hydrogen-dominated gas in the first silane vapor deposition reactor is sent to a cyclone separator, then to a gas heat exchanger for cooling, and finally to a filter assembly to remove solid impurities before entering a circulating fan. Most of the gas from the circulating fan outlet is recycled back to the second silane vapor deposition reactor, while some is vented.

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