Heating disc structure and process equipment of semiconductor device

Abstract

The invention discloses a heating disc structure and process equipment of a semiconductor device. The heating disc structure comprises a detachable heating disc surface on which a wafer is placed so as to heat the wafer, the heating disc surface comprises a plurality of partition thicknesses, and the partition thicknesses are determined based on the flow of corresponding process gas above the heating disc surface; and the electromagnetic heater is arranged below the heating disc surface and is in surface contact with the lower surface of the first partition thickness of the heating disc surface so as to compensate the heating temperature of the corresponding area of the first partition thickness. Through the structure of the heating disc, the heat transfer efficiency of the heating disc can be improved, and the partition heating effect of the disc surface can be flexibly adjusted according to different process gas flow fields, so that the heating uniformity of the whole disc surface is improved, and the film deposition uniformity is further improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a heating plate structure and a process equipment for semiconductor devices. Background Art

[0002] The general conditions for a thin film deposition reaction to proceed normally are that the reaction chamber is near vacuum or in an inert atmosphere, and the temperature reaches approximately 180°C or higher. Furthermore, the deposition rate of the thin film is closely related to the heating temperature of the wafer. The smaller the temperature difference between different areas of the wafer surface, the better the temperature uniformity of the wafer surface, and the more uniform the deposited thin film will be. Therefore, in order to achieve a highly uniform film thickness, reducing the temperature difference between different areas of the wafer surface is an urgent issue to be addressed.

[0003] Conventional heating plates typically utilize a resistance wire structure. The resistance wire must first be placed within the processed spiral channel, and then the plate surface and handle are welded together to complete the entire heating plate. However, due to the linear contact between the resistance wire and the plate surface, the limited width of the spiral channel, and the difficulty of welding the plate surface and handle, the resistance wire cannot cover the entire plate surface. This ultimately affects the plate surface temperature (Temp), the temperature difference (Range), and the uniformity (NU%) of the deposited film.

[0004] In order to solve the above-mentioned problems existing in the prior art, the field urgently needs an improved heating plate structure, which can not only improve the heat transfer efficiency of the heating plate, but also flexibly adjust the zone heating effect of the plate surface according to the different process gas flow fields, thereby improving the heating uniformity of the entire plate surface and further improving the uniformity of thin film deposition. Summary of the Invention

[0005] The following is a brief summary of one or more aspects to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceivable aspects and is neither intended to identify key or critical elements of all aspects nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that will be provided later.

[0006] In order to overcome the above-mentioned defects of the prior art, the present invention provides a heating disk structure and a process equipment for semiconductor devices, which can not only improve the heat transfer efficiency of the heating disk, but also flexibly adjust the zoned heating effect of the disk surface according to the different process gas flow fields, thereby improving the heating uniformity of the entire disk surface and further improving the uniformity of thin film deposition.

[0007] Specifically, the above-mentioned heating plate structure provided according to the first aspect of the present invention includes: a detachable heating plate surface, on which a wafer is placed to heat the wafer, wherein the heating plate surface includes multiple partition thicknesses, and the partition thickness is determined based on the flow rate of the corresponding process gas above; and an electromagnetic heater, arranged below the heating plate surface, in contact with the lower surface of the first partition thickness of the heating plate surface to compensate for the heating temperature of the corresponding area of the first partition thickness.

[0008] Furthermore, in some embodiments of the present invention, the thicknesses of the multiple partitions of the heated disk surface are negatively correlated with the flow rates of the corresponding process gases above them, so that the thickness of the second partition of the heated disk surface corresponding to the process gas below the second flow rate is smaller than the thickness of the first partition of the heated disk surface corresponding to the process gas below the first flow rate, wherein the first flow rate is smaller than the second flow rate.

[0009] Furthermore, in some embodiments of the present invention, the electromagnetic heater is gap-matched with the lower surface of the second partition thickness of the heated disk surface to provide a first electromagnetic heating effect to the corresponding area of the first partition thickness, and a second electromagnetic heating effect to the corresponding area of the second partition thickness, wherein the first electromagnetic heating effect is greater than the second electromagnetic heating effect.

[0010] Furthermore, in some embodiments of the present invention, the heated disk surface also includes a third partition thickness, and the corresponding area of the third partition thickness is located between the corresponding areas of the first partition thickness and the second partition thickness, wherein the second gap formed by the lower surface of the third partition thickness of the heated disk surface and the gap of the electromagnetic heater is smaller than the first gap formed by the lower surface of the second partition thickness of the heated disk surface and the gap of the electromagnetic heater.

[0011] Furthermore, in some embodiments of the present invention, the edge area of the heated disk surface is the first partition thickness, the central area of the heated disk surface is the second partition thickness, and the area between the edge area and the central area is the third partition thickness.

[0012] Furthermore, in some embodiments of the present invention, the number and / or density of coils of the electromagnetic heater are negatively correlated with the flow rate of the corresponding process gas above it, so that the number and / or density of coils corresponding to below the second flow rate of process gas are smaller than the number and / or density of coils corresponding to below the first flow rate of process gas, wherein the first flow rate is smaller than the second flow rate.

[0013] Furthermore, in some embodiments of the present invention, a plurality of liftable pins are provided on the heated plate, wherein the top of the pin is an arc-shaped hemisphere, which contacts the supported wafer at points so that the wafer is in a horizontal state when placed.

[0014] Furthermore, in some embodiments of the present invention, it also includes: a temperature control and measurement module connected to the bottom of the heated disk, used to obtain the real-time temperature of the heated disk, and feed the real-time temperature back to the main temperature control module in the device.

[0015] In addition, the process equipment of the above-mentioned semiconductor device provided according to the second aspect of the present invention includes: a reaction chamber, on the top of which is provided an air inlet for introducing process gas; and the above-mentioned heating plate structure provided by the first aspect of the present invention, which is arranged in the reaction chamber and is used to support the wafer and, during the thin film deposition process, perform zone heating on the surface of the wafer based on the flow distribution of the process gas.

[0016] Furthermore, in some embodiments of the present invention, based on different deposition temperature requirements of the thin film deposition process, the heated disk surface in the heating disk structure is replaced to adjust the disk surface temperature distribution of the zoned heating of the heating disk structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above features and advantages of the present invention will be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or characteristics may have the same or similar reference numerals.

[0018] Figure 1 An exploded view of a heating plate structure provided according to some embodiments of the present invention is shown;

[0019] Figure 2A for Figure 1 A schematic diagram of a top view of the heating plate structure shown in FIG;

[0020] Figure 2B for Figure 2A A schematic side cross-sectional view of the heating plate structure in the AA direction shown in FIG;

[0021] Figure 3 A schematic exploded top view of a heating plate structure according to some embodiments of the present invention is shown; and

[0022] Figure 4 A schematic structural diagram of an electromagnetic heater provided according to some embodiments of the present invention is shown.

[0023] Reference numerals:

[0024] 100 heating plate structure;

[0025] 110 heating plate;

[0026] 111 thimble hole;

[0027] 120 electromagnetic heater;

[0028] 130 heating plate body;

[0029] 131 upper inner wall;

[0030] 140 temperature control and measurement module;

[0031] 150 thimble;

[0032] 151 top;

[0033] 310 First Division; and

[0034] 320 Second Division. DETAILED DESCRIPTION

[0035] The following specific embodiments illustrate the embodiments of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this embodiment. On the contrary, the purpose of introducing the invention in conjunction with the embodiment is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0036] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0037] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood to refer to the orientations depicted in that section and the accompanying drawings. These relative terms are used solely for convenience of description and do not necessarily imply that the devices described herein must be manufactured or operated in a specific orientation. Therefore, they should not be construed as limiting the present invention.

[0038] It will be understood that although the terms "first," "second," "third," etc. may be used herein to describe various components, regions, layers, and / or portions, these components, regions, layers, and / or portions should not be limited by these terms, and these terms are merely used to distinguish different components, regions, layers, and / or portions. Thus, a first component, region, layer, and / or portion discussed below may be referred to as a second component, region, layer, and / or portion without departing from some embodiments of the present invention.

[0039] As mentioned above, traditional heating plates generally use a resistance wire heating plate structure. The resistance wire must first be placed within the processed spiral channel, and then the plate surface and the plate handle are welded together to complete the entire heating plate. However, due to the linear contact between the resistance wire and the plate surface, and due to the limitations of the spiral channel width and the difficulty of welding the plate surface and the plate handle, the resistance wire cannot cover the entire plate surface. This ultimately affects the plate surface temperature (Temp), the temperature difference (Range), and the uniformity of the deposited film (NU%).

[0040] In order to solve the above-mentioned problems existing in the prior art, the present invention provides a heating disk structure and a process equipment for semiconductor devices, which can not only improve the heat transfer efficiency of the heating disk, but also flexibly adjust the zoned heating effect of the disk surface according to the different process gas flow fields, thereby improving the heating uniformity of the entire disk surface and further improving the uniformity of thin film deposition.

[0041] In some non-limiting embodiments, the heating plate structure provided by the first aspect of the present invention may be configured in the process equipment of the semiconductor device provided by the second aspect of the present invention.

[0042] The following describes the operating principle of the aforementioned heating plate structure using examples of semiconductor device process equipment. Those skilled in the art will appreciate that these examples of semiconductor device process equipment are merely non-limiting implementations of the present invention, intended to clearly demonstrate the main concepts of the present invention and provide specific solutions that facilitate implementation by the public. They are not intended to limit the full operating mode or functionality of the heating plate structure. Similarly, the heating plate structure is merely a non-limiting implementation of the present invention and does not constitute a limitation on the configuration objects within these semiconductor device process equipment.

[0043] Please see Figure 1 , Figure 1 An exploded view of a heating plate structure provided according to some embodiments of the present invention is shown.

[0044] like Figure 1As shown, in some embodiments of the present invention, the heating plate structure 100 may include a detachable heated plate surface 110 and an electromagnetic heater 120. A wafer may be placed on the heated plate surface 110 to heat the wafer. Furthermore, the heated plate surface 110 may include multiple partition thicknesses, and the partition thickness may be determined based on the flow rate of the corresponding process gas above. The electromagnetic heater 120 may be disposed below the heated plate surface 110 and contact the lower surface of the first partition thickness of the heated plate surface 110 to compensate for the heating temperature of the corresponding area of the first partition thickness.

[0045] Specifically, if Figure 1 As shown, in some optional embodiments, the heating plate structure 100 further includes a heating plate body 130. The electromagnetic heater 120 can be embedded in the interior of the heating plate body 130. The heating plate surface 110 can be detachably connected to the heating plate body 130 by mechanical cooperation. Specifically, the lower surface of the heating plate surface 110 can cooperate with the upper inner wall 131 of the heating plate body 130 to form a mechanical cooperation. Compared with the one-piece heating plate structure 100 formed by the traditional welding cooperation, the split heating plate structure 100 formed by the detachable mechanical cooperation of the heating plate surface 110 and the heating plate body 130 in this embodiment can not only reduce the processing difficulty of the heating plate structure 100, reduce the manufacturing cycle, thereby shortening the delivery cycle, but also reduce the cost of manufacturing, maintenance, and continuous improvement plan (CIP).

[0046] Continue as Figure 1 As shown, in an embodiment of the present invention, an electromagnetic heater 120 is used instead of a traditional resistance wire heater, which can increase the heating area and improve the heating efficiency. Specifically, the electromagnetic heater 120 has a plurality of high-frequency coils inside. When alternating current is passed through the internal high-frequency coil, a high-frequency changing magnetic field (usually a frequency of 20kHz to 40kHz) is generated. When the heated disk 110 (usually made of stainless steel) is placed in the magnetic field, its bottom cuts the magnetic flux lines. According to Faraday's law of electromagnetic induction, a vortex electric field is formed inside the heated disk 110 and drives the electrons to move, thereby generating an alternating current (i.e., eddy current). When the eddy current flows in the heated disk 110, a large amount of heat (Joule heat) is generated, which in turn heats the heater.

[0047] Compared to conventional resistance wire heaters, the electromagnetic heater 120 of the present invention has a larger heating area and higher heating efficiency. The thermal efficiency of electromagnetic heating can reach over 90%, which is beneficial for energy conservation, while resistance wire heating has low thermal efficiency and large heat losses. Furthermore, the electromagnetic heater 120 has low thermal inertia and precise temperature control, while resistance wire heating has large thermal hysteresis and low control accuracy. Furthermore, the electromagnetic coil of the electromagnetic heater 120 has a longer service life (up to 10 years) and requires virtually no maintenance, while resistance wire is prone to aging and burning out, requiring frequent replacement.

[0048] Further, combined with Figure 2A and Figure 2B Common understanding, Figure 2A for Figure 1 The schematic diagram of the top view of the heating plate structure shown in FIG. Figure 2B for Figure 2A The side cross-sectional structural diagram of the heating plate structure in the AA direction is shown in FIG.

[0049] like Figure 1 、 Figure 2A and Figure 2B As shown, the heated disk surface 110 can fully cover the electromagnetic heater 120 to achieve full coverage heating, thereby reducing the cold spot area on the surface of the heated disk surface 110, thereby reducing the temperature difference of the entire heating disk surface and improving the uniformity of the deposited film.

[0050] In some optional embodiments, the heated plate 110 may be provided with a plurality of elevating pins 150. The pins 150 may be made of a ceramic material with excellent high-temperature resistance and insulation properties. The pins 150 may be positioned within the ejector holes 111 of the heated plate 110, with a clearance fit therebetween to prevent friction between the pins 150 and the inner wall of the ejector holes 111 during the lifting process, thereby preventing particle contamination.

[0051] Further, if Figure 1 and Figure 2A As shown, the top 151 of ejector pin 150 can preferably be a semi-spherical arc to form a point contact with the supported wafer. This ensures that the wafer is supported without affecting heat conduction due to an excessively large contact area. For example, the temperature of the wafer area in contact with the top 151 of ejector pin 150 is significantly higher than the temperature of the wafer area not in contact with ejector pin 150.

[0052] Furthermore, since the heated plate surface 110 of the heating plate structure 100 is configured with multiple ejector pins 150 and should be kept as horizontal as possible when the wafer is placed, if conventional ejector pins with flat tops are used, due to the machining of the ejector pin bodies and the various components of the heating plate structure 100, as well as assembly errors, it is impossible to ensure that the top of the ejector pins is completely in contact with the lower surface of the wafer, and therefore it is impossible to ensure that the wafer is in a horizontal state when placed. In this embodiment, however, since the top 151 of each ejector pin 150 is in point contact with the lower surface of the wafer, there is no surface contact between the top of the conventional flat top and the lower surface of the wafer, thus ensuring that the lower surface of the wafer and the top of each ejector pin are fully in contact.

[0053] like Figure 1 and Figure 2B As shown, in other preferred embodiments, the heating plate structure 100 may further include a temperature control and measurement module 140. The temperature control and measurement module 140 may be connected to the bottom of the heated plate surface 110 via the heating plate body 130 to collect the real-time temperature of the heated plate surface 110 and feed it back to the main temperature control module of the process equipment (not shown in the drawings). The main temperature control module may control the power output of the electromagnetic heater 120 in real time based on the real-time temperature.

[0054] Next, see Figure 3 , Figure 3 A schematic exploded top view of a heating plate structure provided according to some embodiments of the present invention is shown.

[0055] like Figure 3 As shown, in some embodiments of the present invention, the heating layout of the heated disk 110 can be adjusted based on the flow field distribution of the process gas (such as a precursor). Specifically, the thickness of the multiple sub-zones included in the heated disk 110 can be negatively correlated with the flow rate of the corresponding process gas above them, so that the thickness of the second sub-zone 320 of the heated disk 110 corresponding to the process gas below the second flow rate is less than the thickness of the first sub-zone 310 of the heated disk 110 corresponding to the process gas below the first flow rate, where the first flow rate is less than the second flow rate. It can be understood that the thickness of the sub-zones in the heated disk 110 decreases as the flow rate of the process gas above them increases.

[0056] During the thin film deposition process, the greater the flow rate of the process gas, the thicker the film formed. Thin film deposition needs to ensure that the deposition thickness of each area is consistent as much as possible. This process is strongly related to the two conditions of temperature and airflow. When the process gas is introduced from the top of the reaction chamber, it is impossible to ensure that the flow rate at all locations is completely consistent. Therefore, when the flow field of the process gas above the heating disk structure 100 is uneven, if the heating temperature of each area on the wafer surface is kept the same, the probability of depositing an inconsistently uniform film on the wafer surface will increase.

[0057] Generally speaking, the process gas inlet is located at the upper center of the reaction chamber. Even if a uniform gas flow component such as a shower plate is used, in actual practice, the process gas flow rate above the edge area of the heating disk may be smaller than the process gas flow rate in the central area of the heating disk. To address this issue, in this embodiment, the structure of the heating disk surface 110 can be changed, that is, the thickness of the first partition 310 located at the edge area of the heating disk surface 110 is increased, while the thickness of the second partition 320 located in the central area of the heating disk surface 110 is reduced. This allows the lower surface of the second partition 320, which originally corresponds to a larger process gas flow rate, to be gap-fitted with the electromagnetic heater 120, thereby moving the second partition 320 away from the electromagnetic heater 120. This reduces the electromagnetic heating effect provided by the electromagnetic heater 120 to the second partition 320, that is, reduces the heating temperature provided to the second partition 320, thereby making the thickness of the thin film deposited on the wafer surface consistent in each area, thereby improving the uniformity of the film deposition thickness.

[0058] exist Figure 3 In the illustrated embodiment, the electromagnetic heater 120 provides a first electromagnetic heating effect to the first zone 310 and a second electromagnetic heating effect to the second zone 320 , and the first electromagnetic heating effect is greater than the second electromagnetic heating effect, thereby compensating for the heating temperature of the first zone 310 .

[0059] Furthermore, because the flow rate of the process gas above the heating disk structure 100 in the reaction chamber is generally distributed in a gradient, different temperature gradients are required for the heating temperature of the heated disk surface 110 of the heating disk structure 100 below it. To address this issue, multiple heating units with different temperatures can be provided on the heated disk surface 110 to meet different temperature gradient requirements.

[0060] Specifically, in some preferred embodiments, the heated disk surface 110 may further include a third partition (not shown in the drawings) having a third partition thickness. The corresponding area of the third partition thickness may be located between the corresponding areas of the first partition thickness and the second partition thickness. Figure 3 In the illustrated embodiment, the third zone may be between the first zone 310 at the edge and the second zone 320 at the center. Furthermore, the second gap formed by the clearance fit between the lower surface of the third zone of the heated plate 110 and the electromagnetic heater 120 may be smaller than the first gap formed by the clearance fit between the lower surface of the second zone of the heated plate 110 and the electromagnetic heater 120.

[0061] like Figure 3As shown, the structure of the heated plate 110 has a thickness from the center to the edge of the second zone, a third zone, and a first zone, with the second zone thickness being smaller than the third zone thickness, which is smaller than the first zone thickness. Therefore, the first gap between the electromagnetic heater 120 and the second zone thickness is larger than the second gap between the electromagnetic heater 120 and the third zone thickness, and the electromagnetic heater 120 is in direct surface contact with the first zone thickness. This results in the electromagnetic heating effect provided by the electromagnetic heater 120 to the first zone 310 being greater than the electromagnetic heating effect provided to the third zone, and greater than the electromagnetic heating effect provided to the second zone 320.

[0062] In the above embodiment, by changing the first zone 310 of the heated disk 110 to surface contact with the electromagnetic heater 120 and increasing the heated area, the heating efficiency of the electromagnetic heater 120 for the first zone 310 can be improved, thereby providing temperature compensation for the first zone 310. Interstitial heating is employed for the second and third zones 320, and the size of each gap is adjusted based on the relationship between their position and the flow rate of the process gas above. This allows for gradient compensation of the heating temperature of the lower zones of the heated disk 110, where the process gas flow rate is lower. It will be appreciated that the number of zones in the heated disk 110 is not limited to the three mentioned in the embodiment of the present invention, and those skilled in the art may increase or decrease the number accordingly based on actual temperature gradient requirements.

[0063] Furthermore, those skilled in the art will also understand that the structural solution in which the thickness of the first zone at the edge of the heated disk 110 is greater than the thickness of the third zone in the middle, and greater than the thickness of the second zone in the center, is merely a non-limiting embodiment provided by the present invention, intended to clearly demonstrate the main concept of the present invention and provide a specific solution that is convenient for the public to implement, and is not intended to limit the scope of protection of the present invention. Optionally, in other embodiments, those skilled in the art may also adjust the zone positions and set corresponding different zone thicknesses based on the flow field distribution of the process gas above the heating disk structure 100 based on the concepts of the present invention to achieve the same technical effect.

[0064] For example, when the air inlet of the reaction chamber is on the upper left side, the thickness of the partition at the right edge of the heated disk surface 110 can be increased to form the first partition, forming surface contact with the electromagnetic heater 120 below, thereby increasing the heated area. At the same time, the thickness of the partition at the left edge of the heated disk surface 110 can be reduced to form the second and / or third partitions to form a clearance fit with the electromagnetic heater 120, thereby reducing the electromagnetic heating effect and improving the uniformity of the film thickness deposited across the entire wafer surface.

[0065] Next, see Figure 4 , Figure 4A schematic structural diagram of an electromagnetic heater provided according to some embodiments of the present invention is shown.

[0066] like Figure 4 As shown, in other optional embodiments, the coil layout of the electromagnetic heater 120 can be changed according to the flow field distribution of the process gas (such as the precursor) to further adjust the heating condition of the heated disk 110.

[0067] Specifically, if Figure 4 As shown, in some optional embodiments, the number and / or density of coils of the electromagnetic heater 120 are negatively correlated with the flow rate of the process gas above it, so that the number and / or density of coils corresponding to the process gas below the second flow rate is less than the number and / or density of coils corresponding to the process gas below the first flow rate, wherein the first flow rate is less than the second flow rate. In this embodiment, the heated disk 110 can be set as a flat structure (such as Figure 1 ), without designing with different thicknesses.

[0068] exist Figure 4 In the illustrated embodiment, the coil layout of the electromagnetic heater 120 is modified based on the relationship between the position of each zone within the electromagnetic heater 120 and the flow rate of the process gas above. Increasing the number and / or density of coils in the zone of the electromagnetic heater 120 corresponding to the first zone 310 below the process gas flow rate, which is relatively low, can also improve the heating efficiency of the electromagnetic heater 120 for the first zone 310, thereby providing temperature compensation for the first zone 310. Furthermore, by reducing the number and / or density of coils in the zones of the electromagnetic heater 120 corresponding to the second zone 320 and / or the third zone below the process gas flow rate, a gradient compensation can be achieved for the heating temperature of each zone below the heated disk 110, where the process gas flow rate is relatively low, thereby improving the overall temperature control of the heated disk 110 surface. However, the improved coil layout of the electromagnetic heater 120 in this embodiment involves a certain increase in cost compared to the aforementioned method for improving the thickness of the heated disk 110.

[0069] So far, the above-mentioned heating plate structure 100 provided by the first aspect of the present invention has been basically introduced. The second aspect of the present invention further provides a process equipment for semiconductor devices.

[0070] Specifically, in some embodiments, a semiconductor device process apparatus may include a reaction chamber in which a wafer is placed for performing a thin film deposition process; and a heating plate structure 100 disposed within the reaction chamber for supporting the wafer and, during the thin film deposition process, heating the wafer surface in different zones based on the flow distribution of the process gas, thereby improving the uniformity of thin film deposition across the wafer surface. This will not be further described here.

[0071] Furthermore, the heated disk surface 110 in the heating disk structure 100 can be disassembled and replaced based on the different deposition temperature requirements of the thin film deposition process to adjust the disk surface temperature distribution of the zoned heating of the heating disk structure 100. Specifically, since the heated disk surface 110 is a detachable structure, in the early stage of verifying and testing temperature control, it can be quickly replaced by simply disassembling the heated disk surface 110, without changing the design of the heating disk structure 100, disassembling and assembling the entire heating disk structure 100, or adjusting other components in the heating disk structure 100 (such as the electromagnetic heater 120, the heating disk body 130, etc.), so as to adjust the overall temperature control system. In this embodiment, the detachable heated disk surface 110 that is mechanically matched with the heating disk body 130 can not only reduce the processing difficulty of the heating disk structure 100, reduce the manufacturing cycle, thereby shortening the delivery cycle, but also reduce manufacturing, maintenance, and CIP costs.

[0072] In summary, the present invention provides a heating disk structure and a process equipment for semiconductor devices, which can not only improve the heat transfer efficiency of the heating disk, but also flexibly adjust the zoned heating effect of the disk surface according to the different process gas flow fields, thereby improving the heating uniformity of the entire disk surface and further improving the uniformity of thin film deposition.

[0073] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A heating plate structure, characterized in that: include: a detachable heated platen on which a wafer is placed to heat the wafer, wherein the heated platen comprises a plurality of partition thicknesses, and the partition thicknesses are determined based on the flow rate of the corresponding process gas above; as well as The electromagnetic heater is disposed below the heating plate and contacts the lower surface of the first partition thickness of the heating plate to compensate for the heating temperature of the corresponding area of the first partition thickness.

2. The heating plate structure according to claim 1, wherein: The thicknesses of the multiple partitions of the heated disk surface are negatively correlated with the flow rate of the process gas corresponding thereto, so that the thickness of the second partition of the heated disk surface corresponding to the bottom of the process gas at the second flow rate is smaller than the thickness of the first partition of the heated disk surface corresponding to the bottom of the process gas at the first flow rate, wherein the first flow rate is smaller than the second flow rate.

3. The heating plate structure according to claim 2, characterized in that: The electromagnetic heater is fitted with a gap between the lower surface of the second partition thickness of the heated disk surface to provide a first electromagnetic heating effect to the corresponding area of the first partition thickness, and a second electromagnetic heating effect to the corresponding area of the second partition thickness, wherein the first electromagnetic heating effect is greater than the second electromagnetic heating effect.

4. The heating plate structure according to claim 3, wherein: The heated plate further includes a third zone thickness, and the corresponding area of the third zone thickness is located between the corresponding areas of the first zone thickness and the second zone thickness, wherein: The second gap formed by the clearance fit between the lower surface of the third zone thickness of the heating plate and the electromagnetic heater is smaller than the first gap formed by the clearance fit between the lower surface of the second zone thickness of the heating plate and the electromagnetic heater.

5. The heating plate structure according to claim 4, characterized in that: The edge area of the heated disk surface is the first partition thickness, the central area of the heated disk surface is the second partition thickness, and the area between the edge area and the central area is the third partition thickness.

6. The heating plate structure according to claim 1, wherein: The number and / or density of coils of the electromagnetic heater are negatively correlated with the flow rate of the process gas above it, so that the number and / or density of coils corresponding to the second flow rate of process gas below it are smaller than the number and / or density of coils corresponding to the first flow rate of process gas below it, wherein the first flow rate is smaller than the second flow rate.

7. The heating plate structure according to claim 1, wherein: A plurality of liftable pins are provided on the heated plate, wherein the tops of the pins are arc-shaped hemispheres that are in point contact with the supported wafers so that the wafers are placed in a horizontal state.

8. The heating plate structure according to claim 1, wherein: Also includes: The temperature control and measurement module is connected to the bottom of the heating disk and is used to collect the real-time temperature of the heating disk and feed the real-time temperature back to the main temperature control module in the device.

9. A process equipment for a semiconductor device, characterized in that: include: A reaction chamber, with an air inlet provided on the top for introducing process gas; as well as The heating plate structure according to any one of claims 1 to 8 is arranged in the reaction chamber, for supporting the wafer, and performing zone heating on the wafer surface based on the flow distribution of the process gas during the thin film deposition process.

10. The process equipment according to claim 9, characterized in that Based on different deposition temperature requirements of the thin film deposition process, the heated disk surface in the heating disk structure is disassembled and replaced to adjust the temperature distribution of the disk surface of the zoned heating of the heating disk structure.

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