Positive photoresist

Abstract

The invention belongs to the technical field of photoresist, and particularly relates to positive photoresist. Based on the mass of a positive photoresist raw material, the photoresist raw material comprises the following components: 10-25 wt% of phenolic resin; 1 to 10 wt% of a diazo compound; 1-7 wt% of a phenolic hydroxyl compound; 70 to 85 wt% of a solvent; the solvent comprises a main solvent and an auxiliary solvent; the main solvent is propylene glycol methyl ether acetate; the boiling point of the auxiliary solvent is 150-300 DEG C; the auxiliary solvent comprises at least one of an aromatic alcohol solvent, an alkyl alcohol solvent, a lactam solvent, a pyridine solvent, an ester solvent, a sulfoxide solvent and a ketone solvent; the positive photoresist provided by the invention can reduce the photoetching process time.

Description

Technical Field

[0001] The invention belongs to the technical field of photoresists, and in particular relates to a positive photoresist. Background Art

[0002] Photoresist, also known as photoresist, is a photosensitive mixed solution. When exposed to light of a specific wavelength, it undergoes a photochemical reaction, resulting in a significant change in its solubility in a specific developer solution. The photolithography process includes coating, baking, exposure, and development steps, with the exposure and development steps being the most critical, directly determining the photolithography effect. In industrial production, photoresist is an essential processing material for etching tiny patterns. In recent years, with the rapid development of the panel and chip industries, especially the display panel industry, significant progress has been made in the research and development of photoresist.

[0003] Over the past decade, LCDs (liquid crystal displays) have been widely used as display panels. While organic light-emitting diode (OLED) panels, which launched later, offer excellent performance features such as high contrast and foldability, LCD-related products remain the mainstream panel products on the market due to factors such as production costs and process maturity. The LCD manufacturing process includes three major steps: array, box, and module. However, traditional array positive photoresists perform poorly in deep ultraviolet (DUV) lithography machines. Due to their poor photosensitivity, production rates are slow and energy consumption is increased. Consequently, specialized array positive photoresists designed for use with DUV (deep ultraviolet) lithography machines (290-380nm) have emerged.

[0004] Currently, the photoresist used in DUV lithography machines on the market can achieve fine images of 0.6μm, but the lithography process takes a long time and does not have real production value. Summary of the Invention

[0005] Therefore, the technical problem to be solved by the present invention is to overcome the defect of the long time of the existing photolithography process, thereby providing a positive photoresist.

[0006] To this end, the present invention provides the following technical solutions:

[0007] A first aspect of the present invention provides a positive photoresist, wherein, based on the mass of the positive photoresist raw material, the photoresist raw material comprises:

[0008] 10-25wt% phenolic resin;

[0009] 1-10 wt% of a diazo compound;

[0010] 1-7 wt% of a phenolic hydroxy compound;

[0011] 70-85 wt% solvent;

[0012] The solvent includes a main solvent and an auxiliary solvent;

[0013] The main solvent is propylene glycol methyl ether acetate;

[0014] The auxiliary solvent has a boiling point of 150-300°C;

[0015] The auxiliary solvent includes at least one of aromatic alcohol solvents, alkyl alcohol solvents, lactam solvents, pyridine solvents, ester solvents, sulfoxide solvents, and ketone solvents.

[0016] In some optional embodiments, the auxiliary solvent includes at least one of benzyl alcohol, isohexylene glycol, N-methylpyrrolidone, 2-ethanolpyridine, ethylene glycol monoethyl ether acetate, γ-butyrolactone, ethyl lactate, dimethyl sulfoxide, and cyclohexanone.

[0017] In some optional embodiments, the auxiliary solvent includes at least one of isohexylene glycol, N-methylpyrrolidone, dimethyl sulfoxide, γ-butyrolactone, ethyl lactate, and cyclohexanone.

[0018] In some alternative embodiments, the auxiliary solvent comprises isohexylene glycol.

[0019] In some optional embodiments, based on the mass of the solvent, the main solvent is contained in an amount of 70-99 wt % and the auxiliary solvent is contained in an amount of 1-30 wt %.

[0020] In some optional embodiments, based on the mass of the solvent, the main solvent is 75-90 wt % and the auxiliary solvent is 10-25 wt %.

[0021] In some optional embodiments, the photoresist raw material further comprises: 0.05-1 wt % of a surface leveling agent; and 0.1-2 wt % of an adhesion promoter.

[0022] In some optional embodiments, based on the mass of the positive photoresist raw material, the photoresist raw material includes:

[0023] 15-25wt% phenolic resin;

[0024] 5-8wt% of a diazo compound;

[0025] 1-3 wt% of a phenolic hydroxy compound;

[0026] 0.05-0.8wt% surface leveling agent;

[0027] 0.1-1.5 wt% of an adhesion promoter;

[0028] 70-80 wt% solvent.

[0029] In some optional embodiments, the diazo compound includes the structural formula shown in formula (1);

[0030]

[0031] wherein R1, R2, R3, and R4 independently comprise one of formula (2), formula (3), or H, and R1, R2, R3, and R4 are not H at the same time;

[0032]

[0033] In some optional embodiments, the phenolic hydroxy compound includes the structural formula shown in formula (4);

[0034]

[0035] In some optional embodiments, the weight average molecular weight of the phenolic resin is 4000-8000 g / mol, which can be purchased directly. Typically, but not limitedly, the purchasing company is Tongcheng Electronics, and the brand is RA-6273; it can also be synthesized, and the phenolic compounds and aldehyde compounds are synthesized according to conventional methods in the art, wherein the phenolic compounds include xylenol and / or alkylphenol; including o-cresol, m-cresol, p-cresol, 2,3-xylenol, 2,4-xylenol, 2,5-xylenol, 3,5-xylenol, 2,3,5-trimethylphenol, o-ethylphenol, m-ethylphenol, p-ethylphenol, 2,3,5-triethylphenol, o-tert-butylphenol, m-tert-butylphenol, p-tert-butylphenol, 2-tert-butyl-4-methylphenol, o-iso At least one of propylphenol, m-isopropylphenol, p-isopropylphenol, 3-methyl-4-isopropylphenol, m-methoxyphenol, p-methoxyphenol, and o-methoxyphenol; optionally, at least one of m-methoxyphenol, p-methoxyphenol, o-methoxyphenol, m-cresol, p-cresol, 2,5-xylenol (2,4-xylenol), and 3,5-xylenol; the aldehyde compound includes at least one of formaldehyde, acetaldehyde, propionaldehyde, benzaldehyde, phenylacetaldehyde, o-methylbenzaldehyde, m-methylbenzaldehyde, p-methylbenzaldehyde, o-hydroxybenzaldehyde, m-hydroxybenzaldehyde, p-hydroxybenzaldehyde, and salicylaldehyde; formaldehyde may be selected; typically, but not limitedly, the repeating unit of the phenolic resin includes the structural formula shown in formula (5) and / or the structural formula shown in formula (6);

[0036]

[0037] Wherein, n1 is a natural number, 15≤n1≤60, and the weight average molecular weight is 2000-8000 g / mol;

[0038]

[0039] Wherein, n2 is a natural number, 15≤n2≤60, and the weight average molecular weight is 2000-8000 g / mol;

[0040] When the repeating units are formula (5) and formula (6), based on the mass of the phenolic resin, the content of formula (5) is 20-70 wt%, and the content of formula (6) is 20-80 wt%.

[0041] In the present invention, Among them, "*" is the connection site.

[0042] In the present invention, the preparation method of the positive photoresist is a conventional method in the art. Typically, but not limited to, the positive photoresist raw materials are mixed uniformly according to mass.

[0043] In some optional embodiments, the surface leveling agent includes a fluorine-containing surfactant. Typically, but not limited to, the fluorine-containing surfactant includes the F series of DIC (Dai Nippon Ink), such as F-510.

[0044] In some optional embodiments, the adhesion promoter includes a vinyl ether compound. Typically, but not limited to, the adhesion promoter includes a pyridine compound from Tokyo Chemical Industry Co., Ltd., such as M1282.

[0045] In the present invention, the preparation method of the positive photoresist is a conventional preparation method in the art. The positive photoresist is obtained by mixing the positive photoresist raw materials. The specific mixing conditions are determined according to actual conditions.

[0046] The technical solution of the present invention has the following advantages:

[0047] 1. The present invention provides a positive photoresist, wherein the photoresist raw materials include: 10-25wt% of phenolic resin; 1-10wt% of diazo compound; 1-7wt% of phenolic hydroxyl compound; 70-85wt% of solvent; the solvent includes a main solvent and an auxiliary solvent; the main solvent is propylene glycol methyl ether acetate; the boiling point of the auxiliary solvent is 150-300°C; the auxiliary solvent includes aromatic alcohol solvents, alkyl alcohol solvents, lactam solvents, pyrrolidone solvents, and the like. At least one of pyridine solvents, ester solvents, sulfoxide solvents, and ketone solvents; when the positive photoresist is used, the positive photoresist will undergo the steps of coating, baking, exposure, and development. In the exposure step, the diazo compound in the photoresist raw material has high photosensitivity compared to other photosensitive compounds, and can quickly absorb light energy and then decompose to produce acidic groups; in the development step, the acidic groups generated in the exposure step react with the basic groups in the developer to generate a product (carboxylate) with strong polarity, which is transferred to the phenolic acid through intermolecular forces. In the resin, the polarity of the phenolic resin is greatly increased, so that the phenolic resin after exposure can be dissolved in the developer, and finally a pattern consistent with the light-transmitting area of the mask is formed. Compared with other resins, the phenolic resin has good chemical stability and strong polarity. The phenolic resin has excellent solubility. The phenolic hydroxyl compound acts as a sensitizer and can accelerate the dissolution rate of the phenolic resin in the development step. In addition, the inventor unexpectedly discovered that the main solvent evaporates in large quantities during the baking step, but the auxiliary solvent remains in the photoresist layer due to its specific boiling point. The specific type of auxiliary solvent can better dissolve the photoresist raw materials (mainly resins and diazo compounds), avoid the occurrence of solid particle precipitates, make the photoresist have good coating performance, improve the adhesion between the photoresist and the substrate, and make the photoresist absorb light energy more uniformly when exposed. In the development step, the specific type of auxiliary solvent can also increase the distance between the resin molecules in the photoresist, and the basic groups in the developer are more likely to react with the acidic groups, accelerate the dissolution of the phenolic resin in the developer, reduce the photolithography process time, and facilitate actual production.

[0048] 2. In the present invention, a specific type of auxiliary solvent can further accelerate the photosensitivity. The auxiliary solvent is isohexanediol. Compared with other auxiliary solvents, isohexanediol has a higher boiling point and multiple alcoholic hydroxyl groups. The presence of alcoholic hydroxyl groups will promote the reaction between the basic groups in the developer and the generated acidic groups, which can further accelerate the photolithography process.

[0049] 3. In the present invention, the surface leveling agent and adhesion promoter can further improve the fluidity of the system, improve the coating performance of the photoresist raw material, and further increase the speed of the photolithography process; the adhesion promoter can further improve the adhesion between the photoresist and the substrate, increase the coating performance, and further increase the speed of the photolithography process.

[0050] 4. In the present invention, the dosage of each component in the positive photoresist can further ensure that the various properties of the photoresist meet the standards. The positive photoresist has a short time in the photolithography process and has good and stable storage performance, which is convenient for transportation. DETAILED DESCRIPTION

[0051] The following examples are provided for a better understanding of the present invention and are not intended to limit the best mode of implementation. They do not limit the content and scope of protection of the present invention. Any product identical or similar to the present invention obtained by anyone under the guidance of the present invention or by combining the features of the present invention with other prior arts shall fall within the scope of protection of the present invention.

[0052] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs; the terms used herein are for the purpose of describing specific embodiments only and are not intended to limit this application; the terms "including" and "having" and any variations thereof in this application text are intended to cover non-exclusive inclusions.

[0053] In the description of the embodiments of the present application, technical terms such as "first" and "second" are only used to distinguish different objects and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features.

[0054] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0055] The "range" disclosed in this application is defined in the form of a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundaries of a particular range. The range defined in this way can be inclusive or exclusive of the end values and can be arbitrarily combined, i.e., any lower limit can be combined with any upper limit to form a range. In this application, unless otherwise specified, the numerical range "ab" represents an abbreviation of any real number combination between a and b, where a and b are both real numbers. For example, the numerical range "0-5" means that all real numbers between "0-5" have been listed herein, and "0-5" is just an abbreviation of these numerical combinations. In addition, when stating that a certain parameter is an integer ≥2, it is equivalent to disclosing that the parameter can be, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0056] In the description of the embodiments of the present application, the term "and / or" is merely a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent three situations: A exists alone, A and B exist at the same time, and B exists alone.

[0057] In the description of the embodiments of the present application, the term "at least one" refers to one or more than two (including two).

[0058] If no specific experimental steps or conditions are specified in the examples, the conventional experimental steps or conditions described in the literature in this field can be used. If the manufacturer of the reagents or instruments is not specified, they are all commercially available conventional reagents.

[0059] The phenolic resin was purchased from Tongcheng Electronics; the brand is RA-6273;

[0060] The diazo compound was purchased from Miwon and its brand is PAC325.

[0061] The phenolic hydroxy compound was purchased from Tongcheng Electronics; the brand is RA-6269;

[0062] The surface leveling agent was purchased from DIC (Dainippon Ink); the brand is F-510;

[0063] The adhesion promoter was purchased from Tokyo Chemical Industry Development Co., Ltd.; the brand name is M1282.

[0064] Example 1

[0065] This embodiment provides a positive photoresist, the specific composition and preparation method of which are as follows:

[0066] Photoresist raw materials include:

[0067] 22g of phenolic resin;

[0068] 5.4g of diazo compounds;

[0069] 1.6 g of phenolic hydroxyl compound;

[0070] 0.67g of surface leveling agent;

[0071] 0.16g of adhesion promoter;

[0072] 63g of propylene glycol methyl ether acetate and 7.02g of isohexylene glycol;

[0073] The photoresist raw materials are mixed to obtain a positive photoresist.

[0074] Example 2

[0075] This embodiment provides a positive photoresist, the specific composition and preparation method of which are as follows:

[0076] The method of Example 1 was followed, except that the solvent included 66.66 g of propylene glycol methyl ether acetate and 3.51 g of isohexylene glycol.

[0077] Example 3

[0078] This embodiment provides a positive photoresist, the specific composition and preparation method of which are as follows:

[0079] The method of Example 1 was followed, except that the solvent included 69.45 g of propylene glycol methyl ether acetate and 0.7 g of isohexylene glycol.

[0080] Example 4

[0081] This embodiment provides a positive photoresist, the specific composition and preparation method of which are as follows:

[0082] The method of Example 1 was followed, except that isohexylene glycol was replaced with an equal mass of 2-ethanolpyridine.

[0083] Example 5

[0084] This embodiment provides a positive photoresist, the specific composition and preparation method of which are as follows:

[0085] The method of Example 1 was followed, except that isohexylene glycol was replaced with an equal mass of benzyl alcohol.

[0086] Example 6

[0087] This embodiment provides a positive photoresist, the specific composition and preparation method of which are as follows:

[0088] Photoresist raw materials include:

[0089] 10g of phenolic resin;

[0090] 2g of diazo compound;

[0091] 1g of phenolic hydroxyl compound;

[0092] 0.05g of surface leveling agent;

[0093] 0.1g of adhesion promoter;

[0094] 57.51 g of propylene glycol methyl ether acetate and 6.4 g of isohexylene glycol;

[0095] The photoresist raw materials are mixed to obtain a positive photoresist.

[0096] Example 7

[0097] This embodiment provides a positive photoresist, the specific composition and preparation method of which are as follows:

[0098] The method of Example 3 was followed, except that no surfactant and no adhesion promoter were added.

[0099] Comparative Example 1

[0100] This comparative example provides a positive photoresist, the specific composition and preparation method of which are as follows:

[0101] The method of Example 1 was followed, except that “63 g of propylene glycol methyl ether acetate and 7.02 g of isohexylene glycol” was replaced with “70.02 g of propylene glycol methyl ether acetate”.

[0102] Comparative Example 2

[0103] This comparative example provides a positive photoresist, the specific composition and preparation method of which are as follows:

[0104] Photoresist raw materials include:

[0105] 20g of phenolic resin;

[0106] 0.5g of diazo compound;

[0107] 0.5g of phenolic hydroxyl compound;

[0108] 0.02g of surface leveling agent;

[0109] 0.05g of adhesion promoter;

[0110] 70.2 g of propylene glycol methyl ether acetate and 7.8 g of isohexylene glycol;

[0111] The photoresist raw materials are mixed to obtain a positive photoresist.

[0112] Comparative Example 3

[0113] This comparative example provides a positive photoresist, the specific composition and preparation method of which are as follows:

[0114] Photoresist raw materials include:

[0115] 30g of phenolic resin;

[0116] 10g of diazo compound;

[0117] 8g of phenolic hydroxyl compound;

[0118] 0.02g of surface leveling agent;

[0119] 0.05g of adhesion promoter;

[0120] 46.7 g of propylene glycol methyl ether acetate and 5.2 g of isohexylene glycol;

[0121] The photoresist raw materials are mixed to obtain a positive photoresist.

[0122] Comparative Example 4

[0123] This comparative example provides a positive photoresist, the specific composition and preparation method of which are as follows:

[0124] The method of Example 6 is followed, except that “5.4 g of the diazo compound and 1.6 g of the phenolic hydroxy compound” is changed to “7.0 g of the diazo compound”.

[0125] Comparative Example 5

[0126] This comparative example provides a positive photoresist, the specific composition and preparation method of which are as follows:

[0127] The method of Example 6 is followed, except that “5.4 g of diazo compound, 1.6 g of phenolic hydroxy compound” is changed to “7.0 g of phenolic hydroxy compound”.

[0128] Comparative Example 6

[0129] This comparative example provides a positive photoresist, the specific composition and preparation method of which are as follows:

[0130] The method of Example 6 was followed, except that isohexylene glycol was replaced with an equal mass of methanol.

[0131] Comparative Example 7

[0132] This comparative example provides a positive photoresist, the specific composition and preparation method of which are as follows:

[0133] The method of Example 1 is the same as that of Example 1, except that isohexylene glycol is replaced with ethylene glycol dimethyl ether of equal mass.

[0134] Test Case

[0135] A photoresist was applied to a silicon wafer by spin coating for 25 seconds at a rotation speed of 4800 r / s. After VCD vacuum drying, the film was baked on a hot plate at 110° C. for 90 seconds to form a photoresist coating with a coating thickness of 1.5 μm. The photoresist layer was then exposed to different energies using an i wavelength (specifically, the exposure program of the stepper exposure machine was set from 4 mJ to 28 mJ, with an interval of 0.3 mJ). After exposure, the film was developed with 2.38 wt% TMAH for 60 seconds, washed with water for 25 seconds, and then dried to remove the exposed portion to form a photoresist pattern. The photoresist pattern was inspected using a scanning electron microscope. When the scanning electron microscope observed a pattern with a line size of 3 μm, the corresponding exposure energy was defined as the sensitive energy. The sensitivity is directly read in the exposure machine, and the average value is obtained by testing 3 times. The size of the developed line is correlated with the amount of photoresist dissolved during the exposure process. When the pattern size is limited to 3μm, the amount of photoresist dissolved is uniquely determined. The photoresist dissolves because when the photoresist is exposed, the diazo compounds in the photoresist raw materials absorb energy during the exposure process to generate acidic groups. The acidic groups react with the alkaline groups in the developer during the development process to dissolve the resin. Therefore, the exposure energy is correlated with the speed of acidic group generation. Low sensitivity means that the required amount of acidic groups can be quickly generated at a lower exposure energy. Therefore, the speed of the photolithography process can be characterized by the sensitivity. Low sensitivity means that less energy is required to achieve the same effect, and the photolithography process time is short.

[0136] The specific test results are shown in Table 1;

[0137] Table 1

[0138]

[0139]

[0140] By comparing Example 1, Examples 4 and 5, and Comparative Examples 6 and 7, it can be seen that specific types of auxiliary solvents can further accelerate the speed of the photolithography process. When the auxiliary solvent is isohexanediol, because isohexanediol has a higher boiling point and multiple alcoholic hydroxyl groups, the presence of alcoholic hydroxyl groups will promote the reaction of the basic groups in the developer with the acidic groups generated by the photosensitive groups after exposure, thereby accelerating the dissolution rate of the phenolic resin.

[0141] Comparison of Example 1, Example 6, and Comparative Examples 2 and 3 shows that the amount of each component can affect the time of the photolithography process. Only a specific amount of the photoresist raw material can speed up the photolithography process.

[0142] Comparison between Example 1 and Comparative Examples 4 and 5 shows that the diazo compound and the phenolic hydroxy compound have a synergistic effect, which can further accelerate the dissolution rate of the phenolic resin in the developer.

[0143] Comparison between Example 3 and Example 7 shows that the surfactant and the adhesion promoter can further increase the speed of the photolithography process.

[0144] Obviously, the above embodiments are merely examples for clarity of explanation and are not intended to limit the implementation methods. Those skilled in the art will appreciate that other variations or modifications can be made based on the above description. It is not necessary and impossible to enumerate all implementation methods here. Obvious variations or modifications arising therefrom remain within the scope of protection of the present invention.

Claims

1. A positive photoresist, characterized in that Measured by mass of the positive photoresist raw material, the photoresist raw material includes: 10-25wt% phenolic resin; 1-10 wt% of a diazo compound; 1-7 wt% of a phenolic hydroxy compound; 70-85 wt% solvent; The solvent includes a main solvent and an auxiliary solvent; The main solvent is propylene glycol methyl ether acetate; The auxiliary solvent has a boiling point of 150-300°C; The auxiliary solvent includes at least one of aromatic alcohol solvents, alkyl alcohol solvents, lactam solvents, pyridine solvents, ester solvents, sulfoxide solvents, and ketone solvents.

2. The positive photoresist according to claim 1, characterized in that The auxiliary solvent includes at least one of benzyl alcohol, isohexylene glycol, N-methylpyrrolidone, 2-ethanolpyridine, ethylene glycol monoethyl ether acetate, γ-butyrolactone, ethyl lactate, dimethyl sulfoxide, and cyclohexanone; Optionally, the auxiliary solvent includes at least one of isohexylene glycol, N-methylpyrrolidone, dimethyl sulfoxide, γ-butyrolactone, ethyl lactate, and cyclohexanone; Further optionally, the auxiliary solvent includes isohexylene glycol.

3. The positive photoresist according to claim 1 or 2, characterized in that Calculated by solvent mass, it comprises 70-99 wt% of a main solvent and 1-30 wt% of an auxiliary solvent; Optionally, based on the mass of the solvent, the main solvent comprises 75-90 wt % and the auxiliary solvent comprises 10-25 wt %.

4. The positive photoresist according to any one of claims 1 to 3, characterized in that The photoresist raw material also includes: 0.05-1wt% surface leveling agent; and / or, 0.1-2 wt% of an adhesion promoter.

5. The positive photoresist according to claim 4, characterized in that Measured by the mass of the positive photoresist raw material, the photoresist raw material includes: 15-25wt% phenolic resin; 5-8wt% of a diazo compound; 1-3 wt% of a phenolic hydroxy compound; 0.05-0.8wt% surface leveling agent; 0.1-1.5 wt% of an adhesion promoter; 70-80 wt% solvent.

6. The positive photoresist according to any one of claims 1 to 5, characterized in that The weight average molecular weight of the phenolic resin is 4000-8000 g / mol.

7. The positive photoresist according to any one of claims 1 to 6, characterized in that The diazo compound includes the structural formula shown in formula (1); wherein R1, R2, R3, and R4 independently comprise one of formula (2), formula (3), or H, and R1, R2, R3, and R4 are not H at the same time; The "*" in formula (2) and formula (3) represents a linking site.

8. The positive photoresist according to any one of claims 1 to 7, characterized in that The phenolic hydroxy compound includes the structural formula shown in formula (4); 9. The positive photoresist according to claim 4 or 5, characterized in that The surface leveling agent includes a fluorine-containing surfactant.

10. The positive photoresist according to claim 4 or 5, characterized in that The adhesion promoter includes vinyl ether compounds.

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