Photoetching method, ultraviolet laser generation method and device

Abstract

The invention discloses a photoetching method and an ultraviolet laser generation method and device, relates to the technical field of photoetching, and aims to solve the problems of low chip yield and low production efficiency caused by low output power of 386nm laser in the prior art. A single-frequency semiconductor laser is adopted to output continuous wave laser with the wavelength of 1004.9 nm, the continuous wave laser is injected into an injection locking system, single-frequency narrow-linewidth pulse laser with the wavelength of 1004.9 nm is obtained, after power amplification is conducted on the single-frequency narrow-linewidth pulse laser, narrow-linewidth pulse laser with the wavelength of 1160.2 nm is output through a diamond Raman frequency shift system, the laser is subjected to frequency tripling treatment, and the laser with the wavelength of 1160.2 nm is obtained. Laser output of 386.733 nm is obtained, and the laser of 386.733 nm is used for etching an object to be etched. The 386.733 nm laser output power reaches up to 12 W, the laser output efficiency reaches up to 30%, and when the 386.733 nm laser is applied to photoetching, the chip quality and the production efficiency can be effectively improved.

Description

Technical Field

[0001] The present invention relates to the field of photolithography technology, and in particular to a technology for generating ultraviolet light sources in photolithography technology. Background Art

[0002] A photolithography machine is a core piece of equipment in chip manufacturing, used to transfer circuit patterns onto silicon wafers. During the chip manufacturing process, photolithography machines expose photoresist. Appropriate light source power ensures uniform exposure of the photoresist, resulting in a clear image. However, low light source power can lead to underexposure of the photoresist, blurring the resulting pattern and affecting chip yield. Furthermore, low-power lasers require longer exposure times, reducing production efficiency.

[0003] One of the most common wavelengths used in photolithography machines is 386nm. Currently, the mechanism for generating 386nm lasers is as follows: a titanium sapphire crystal outputs a 772nm laser, which is then frequency-doubled to achieve 386nm laser output. Typically, a titanium sapphire crystal can achieve a maximum output power of approximately 10W for 660-1100nm lasers. However, after filtering, the output power at the narrow linewidth of 772nm is far less than 1W. Even with titanium sapphire crystal power amplification, achieving a narrow linewidth 772nm laser output power of 10W while maintaining the laser output linewidth is difficult.

[0004] In summary, the ultraviolet light power generated by the existing narrow-linewidth 386nm laser generation method is low, resulting in limited chip yield and production efficiency. Summary of the Invention

[0005] The purpose of the present invention is to solve the problem that the existing 386nm laser has low output power, resulting in low chip yield and low production efficiency, and to provide a photolithography method, an ultraviolet laser generation method and a device.

[0006] A photolithography method of the present invention comprises: processing a continuous wave laser with a wavelength of 1004.9 nm to obtain a high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm; performing Raman frequency shift on the high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm using a diamond crystal to obtain a narrow-linewidth pulse laser with a wavelength of 1160.2 nm; performing frequency tripling on the narrow-linewidth pulse laser with a wavelength of 1160.2 nm to obtain a high-power single-frequency narrow-linewidth pulse laser with a wavelength of 386.733 nm; and etching an object to be engraved using the high-power single-frequency narrow-linewidth pulse laser with a wavelength of 386.733 nm.

[0007] Optionally, the processing of the continuous wave laser with a wavelength of 1004.9 nm includes: injecting the continuous wave laser with a wavelength of 1004.9 nm into an injection locking system to obtain a single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm; and amplifying the single-frequency pulse laser with a wavelength of 1004.9 nm through an amplification system to obtain a high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm.

[0008] Optionally, the continuous wave laser with a wavelength of 1004.9 nm is realized by a semiconductor laser.

[0009] Optionally, the amplification system is a three-stage amplification system.

[0010] Optionally, using diamond crystal to Raman frequency shift the high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm includes: inputting the high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm into a Raman frequency shift system composed of an input mirror, a diamond crystal and an output mirror to obtain a narrow-linewidth pulse laser with a wavelength of 1160.2 nm.

[0011] The invention discloses an ultraviolet laser generating method, comprising: processing a continuous wave laser with a wavelength of 1004.9 nm to obtain a high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm; performing Raman frequency shift on the high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm using a diamond crystal to obtain a narrow-linewidth pulse laser with a wavelength of 1160.2 nm; and performing frequency tripling on the narrow-linewidth pulse laser with a wavelength of 1160.2 nm to obtain a high-power single-frequency narrow-linewidth pulse laser with a wavelength of 386.733 nm.

[0012] The present invention provides an ultraviolet laser generating device, comprising: a single-frequency semiconductor laser with an output wavelength of 1004.9 nm, an injection locking system, an amplification system, a diamond Raman frequency shift system, and a frequency tripling system; continuous wave laser light with a wavelength of 1004.9 nm output by the single-frequency semiconductor laser is injected into the injection locking system, the injection locking system outputs single-frequency narrow-linewidth pulse laser light with a wavelength of 1004.9 nm, the single-frequency pulse laser light is amplified by the amplification system to output high-power narrow-linewidth pulse laser light with a wavelength of 1004.9 nm, the high-power narrow-linewidth pulse laser light is passed through the diamond Raman frequency shift system to output narrow-linewidth pulse laser light with a wavelength of 1160.2 nm, and the narrow-linewidth pulse laser light with a wavelength of 1160.2 nm is injected into the frequency tripling system to output laser light with a wavelength of 386.733 nm.

[0013] Optionally, the injection locking system includes: a first output mirror, an electro-optical Q-switch, a first resonant cavity mirror with piezoelectric ceramics, a second resonant cavity mirror, a gain medium, a third resonant cavity mirror, and a pump source laser with an output wavelength of 941 nm; the first output mirror, the first resonant cavity mirror, the second resonant cavity mirror, and the third resonant cavity mirror constitute a resonant cavity of the injection locking system; the electro-optical Q-switch and the gain medium are located in the resonant cavity; the continuous wave laser with a wavelength of 1004.9 nm output by the single-frequency semiconductor laser is injected into the injection locking system from the first output mirror as seed light; the laser with a wavelength of 941 nm output by the pump source laser is injected into the injection locking system from the third resonant cavity mirror as a pump source; the single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm generated by the resonant cavity is output through the first output mirror.

[0014] Optionally, the gain medium is Yb:YLF or Yb:KGW.

[0015] Optionally, the diamond Raman frequency shift system includes an input mirror, a diamond crystal and a second output mirror; the input mirror and the second output mirror constitute a resonant cavity of the diamond Raman frequency shift system, and the diamond crystal is located in the resonant cavity.

[0016] The present invention uses a single-frequency 1004.9nm semiconductor laser as an initial seed source, implements injection locking, and achieves 1004.9nm single-frequency pulsed laser output. A Yb:KGW or Yb:YLF crystal is used as a 1004.9nm pulsed laser amplifying crystal to achieve high-power 1004.9nm single-frequency pulsed laser output. The 1004.9nm single-frequency pulsed laser is subjected to diamond crystal Raman frequency shifting to achieve high-power 1160.2nm narrow-linewidth laser output. The 1160.2nm laser triples frequency to achieve 386.733nm laser output. The 386.733nm laser output power obtained by the present invention is as high as 12W, and the laser output efficiency is as high as 30%. Application of the 386.733nm laser to photolithography technology can improve the exposure uniformity of photoresist, thereby improving chip quality, and can effectively shorten exposure time, thereby increasing chip production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 is a flow chart of a photolithography method according to an embodiment of the present application;

[0018] Figure 2 is a flow chart of a method for generating ultraviolet laser according to an embodiment of the present application;

[0019] Figure 3 is a structural schematic diagram of an ultraviolet laser generating device according to an embodiment of the present application;

[0020] Figure 4 2 is a schematic structural diagram of an injection locking system according to an embodiment of the present application. DETAILED DESCRIPTION

[0021] The following describes the embodiments of the present invention through specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments. The details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments can be combined with each other unless they conflict.

[0022] As used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context indicates otherwise. It should be further understood that the terms "comprise", "include" indicate the presence of the described features, operations, elements, components, items, kinds, and / or groups, but do not exclude the presence, occurrence, or addition of one or more other features, operations, elements, components, items, kinds, and / or groups. The terms "or" and "and / or" used herein are interpreted as inclusive, or mean any one or any combination. Thus, "A, B, or C" or "A, B, and / or C" means "any of the following: A; B; C; A and B; A and C; B and C; A, B, and C". Exceptions to this definition occur only when the combination of elements, functions, or operations is inherently mutually exclusive in some way.

[0023] In response to the problem that the existing 386nm laser has low output power, resulting in low chip yield and low production efficiency, the present invention provides a photolithography method, an ultraviolet laser generation method and device, which can improve the light output efficiency and power of the 386nm laser.

[0024] The photolithography method of an embodiment of the present application includes: processing a continuous wave laser with a wavelength of 1004.9 nm to obtain a high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm; using a diamond crystal to Raman frequency shift the high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm to obtain a narrow-linewidth pulse laser with a wavelength of 1160.2 nm; tripling the narrow-linewidth pulse laser with a wavelength of 1160.2 nm to obtain a high-power single-frequency narrow-linewidth pulse laser with a wavelength of 386.733 nm; and using the high-power single-frequency narrow-linewidth pulse laser with a wavelength of 386.733 nm to etch an object to be engraved.

[0025] Figure 1 FIG. 1 is a flow chart of a photolithography method according to an embodiment of the present application. Figure 1As shown, the photolithography method of the embodiment of the present application begins with step S110.

[0026] In step S110 , a continuous wave laser with a wavelength of 1004.9 nm is processed to obtain a high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm.

[0027] In this step, a semiconductor laser is used to generate a continuous wave laser with a wavelength of 1004.9 nm. The semiconductor laser is a single-frequency laser with an output power of 5 mW, a central wavelength of 1004.9 nm, a spectral linewidth of 1 MHz, and a beam quality factor within 1.1.

[0028] A continuous wave laser with a wavelength of 1004.9nm is injected into the injection locking system to obtain a single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9nm. The single-frequency pulse laser with a wavelength of 1004.9nm is then amplified by an amplification system to obtain a high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9nm.

[0029] In one implementation, the injection locking system is designed for 1004.9nm single-frequency pulsed lasers. A 1004.9nm continuous-wave laser output from a semiconductor laser is injected into the injection locking system as seed light. The injection locking system uses a 941nm laser as pump light and a slab-shaped Yb:YLF or Yb:KGW crystal as the gain medium. A piezoelectric ceramic is fixed to one of the cavity mirrors to adjust the cavity length. An electro-optical Q-switch is used to achieve 12ns pulse width at 1004.9nm single-frequency pulsed laser output.

[0030] Next, the 1004.9nm single-frequency pulsed laser is amplified. This embodiment uses a three-stage amplification system to amplify the 1004.9nm single-frequency pulsed laser. This three-stage amplification system uses Yb:YLF or Yb:KGW crystals as the amplifying laser crystals. After amplification by the three-stage amplification system, the single-frequency pulsed laser can reach a power of 200W, with a laser linewidth of approximately 15MHz.

[0031] Next, in step S120, the high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm obtained in step S110 is Raman frequency shifted using a diamond crystal to obtain a narrow-linewidth pulse laser with a wavelength of 1160.2 nm.

[0032] In this embodiment, a diamond Raman frequency-shifting system is used to frequency-shift the incident laser light. The system consists of an input mirror, a diamond crystal, and an output mirror. A 200W narrow-linewidth 1004.9nm pulse laser injected into the diamond Raman frequency-shifting system produces a 40W narrow-linewidth 1160.2nm pulse laser output.

[0033] Next, in step S130, the narrow-linewidth pulse laser with a wavelength of 1160.2 nm obtained in step S120 is frequency tripled to obtain a high-power single-frequency narrow-linewidth pulse laser with a wavelength of 386.733 nm.

[0034] In this embodiment, a frequency tripling system is used to triple the frequency of a 1160.2nm narrow-linewidth pulsed laser. In this frequency tripling system, both the doubled and tripled crystals are LBO crystals. A 40W 1160.2nm narrow-linewidth pulsed laser is injected into the frequency tripling system and, after being split by a beam splitter prism, a 12W 386.733nm narrow-linewidth laser is generated.

[0035] Next, in step S140 , the object to be engraved is etched using a high-power single-frequency narrow-linewidth pulse laser with a wavelength of 386.733 nm.

[0036] The high-power single-frequency narrow-linewidth pulse laser with a wavelength of 386.733 nm obtained in the previous step is used as a light source to expose the photoresist on the wafer, and the circuit pattern on the mask is projected onto the photoresist.

[0037] Next, the wafer undergoes development, etching, deposition and other processes in sequence to obtain a wafer with circuits on its surface.

[0038] The photolithography method of the present application embodiment uses a single-frequency 1004.9nm semiconductor laser as an initial seed source, and after injection locking, realizes 1004.9nm single-frequency pulse laser output, uses Yb:KGW or Yb:YLF crystal as 1004.9nm pulse laser amplifying crystal, to realize high-power 1004.9nm single-frequency pulse laser output, 1004.9nm single-frequency pulse laser can realize high-power 1160.2nm narrow linewidth laser output through diamond crystal Raman frequency shift, and 1160.2nm laser triple frequency realizes 386.733nm laser output. The 386.733nm laser output power obtained by the present invention is as high as 12W, and laser output efficiency is as high as 30%. Above-mentioned 386.733nm is applied to photolithography technology, and the exposure uniformity of photoresist can be improved, not only chip quality can be improved, but also exposure time can be effectively shortened, and chip production efficiency can be improved. In addition, due to the high laser output efficiency of the present application embodiment, photolithography cost is reduced.

[0039] The present application also provides a method for generating ultraviolet laser. Figure 2 As shown, the method includes the following steps S210 to S230.

[0040] Step S210 : Processing the continuous wave laser with a wavelength of 1004.9 nm to obtain a high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm.

[0041] Step S220 , using a diamond crystal to perform Raman frequency shift on the high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm to obtain a narrow-linewidth pulse laser with a wavelength of 1160.2 nm.

[0042] Step S230 , frequency tripling the narrow-linewidth pulse laser with a wavelength of 1160.2 nm to obtain a high-power single-frequency narrow-linewidth pulse laser with a wavelength of 386.733 nm.

[0043] The above steps S210 to S230 are the same as steps S110 to S130 and are not repeated here. The purpose of the ultraviolet laser generation method of the embodiment of the present application is to provide a high-power, high-efficiency ultraviolet laser generation technology. The ultraviolet light generated by this method is applied to a photolithography machine to achieve high-efficiency, high-quality wafer processing.

[0044] Figure 3 FIG. 1 is a schematic structural diagram of an ultraviolet laser generating device according to an embodiment of the present application, as shown in FIG. Figure 3 As shown, the device includes a single-frequency semiconductor laser 1 with an output wavelength of 1004.9 nm, an injection locking system 2, an amplification system 3, a diamond Raman frequency shift system 4 and a frequency tripling system 5.

[0045] The single-frequency semiconductor laser 1 can output a continuous wave laser with a central wavelength of 1004.9 nm and a power of 5 mW, a spectral linewidth of 1 MHz, and a beam quality factor of less than 1.1. The 1004.9 nm single-frequency continuous wave laser is injected into the injection locking system 2, and the injection locking system 2 outputs a single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm.

[0046] like Figure 4 As shown, the injection locking system 2 mainly includes: a first output mirror 2-4, an electro-optical Q-switch 2-5, a first resonant cavity mirror 2-6 with piezoelectric ceramics, a second resonant cavity mirror 2-7, a gain medium 2-8, a third resonant cavity mirror 2-9 and a pump source laser 2-11 with an output wavelength of 941 nm.

[0047] The first output mirror 2-4, the first resonant cavity mirror 2-6, the second resonant cavity mirror 2-7, and the third resonant cavity mirror 2-9 constitute the resonant cavity of the injection locking system 2. The electro-optical Q-switch 2-5 and the gain medium 2-8 are located in the resonant cavity. The pump source laser 2-11 provides pumping for the resonant cavity.

[0048] A single-frequency semiconductor laser 1 outputs a continuous-wave laser 2-1 with a wavelength of 1004.9 nm as seed light. This seed light passes through a collimator 2-2 and a one-way isolator 2-3 before being injected into the resonant cavity of an injection-locking system 2 via a first output mirror 2-4. The incident angle of the 1004.9 nm laser light on the first output mirror 2-4 is within a range of 0 to 15 degrees. At this angle, the transmittance of the first output mirror 2-4 at the 1004.9 nm wavelength is 10%. The 1004.9 nm laser light entering the injection-locking system 2 is reflected by a third resonant cavity mirror 2-9 before entering a gain medium 2-8.

[0049] The pump source laser 2-11 outputs a laser beam with a wavelength of 941 nm as pump light. After being focused by the focusing coupling system 2-10, the pump light is injected into the injection locking system 2 through the third resonant cavity mirror 2-9 and enters the gain medium 2-8, providing energy to the gain medium 2-8. The gain medium 2-8 is a Yb:YLF or Yb:KGW crystal.

[0050] The outer surface of the first resonant cavity mirror 2-6 is arranged with piezoelectric ceramics, which can be used to adjust the cavity length of the resonant cavity of the injection locking system 2. The second resonant cavity mirror 2-7 and the third resonant cavity mirror 2-9 are adjusted so that the gain medium 2-8 outputs a single-frequency laser with a wavelength of 1004.9 nm. Under the action of the electro-optical Q-switch 2-5, a 1004.9 nm single-frequency pulse laser with a pulse width of 12 ns is generated. The 1004.9 nm single-frequency narrow-linewidth pulse laser is output outside the resonant cavity through the first output mirror 2-4.

[0051] The 1004.9nm single-frequency, narrow-linewidth pulsed laser output from the first output mirror 2-4 enters amplification system 3, which utilizes a three-stage amplification system using either Yb:YLF or Yb:KGW crystals. After amplification by the three-stage amplification system, the 1004.9nm single-frequency, narrow-linewidth pulsed laser achieves a 200W output power, with a spectral linewidth of approximately 15MHz.

[0052] The 1004.9nm high-power, narrow-linewidth pulsed laser output by amplification system 3 enters diamond Raman frequency shift system 4, which frequency shifts the 1004.9nm laser light to produce a narrow-linewidth pulsed laser output with a wavelength of 1160.2nm. Diamond Raman frequency shift system 4 consists of an input mirror, a diamond crystal, and a second output mirror. The second output mirror is coated with a film with high transmittance at 1004.9nm and high reflectivity at 1160.2nm. The diamond crystal, used as a Raman frequency shift crystal, has end face dimensions of 3mm x 3mm and a length of 7mm. Both end faces are coated with a 1000-1200nm high-transmittance film. The second output mirror is a plano-concave mirror with a concave curvature of -200mm. The concave surface is coated with a film with a 20% transmittance at 1160.2nm, and the flat surface is coated with a film with high transmittance at 1160.2nm. The 200W 1004.9nm narrow linewidth pulse laser output by the amplification system 3 is injected into the diamond Raman frequency shift system 4, achieving a 40W 1160.2nm narrow linewidth pulse laser output.

[0053] After being output by diamond Raman frequency shift system 4, the 1160.2nm laser enters triple frequency system 5. The lenses in triple frequency system 5 are coated with a 45-degree 386.733nm laser high-reflection coating and 1160.2nm and 580.1nm laser high-transmittance coatings to filter out the 1160.2nm and 580.1nm lasers. Both the double frequency crystal and the triple frequency crystal are LBO crystals. The two LBO crystals are cut for phase matching angles of 580.1nm and 386.733nm, respectively, and both LBO crystals are coated with high-transmittance coatings for 1160.2nm, 580.1nm, and 386.733nm. 40W of 1160.2nm narrow-linewidth pulsed laser is injected into triple frequency system 5, and after being split by a beam splitter prism, a 12W 386.733nm narrow-linewidth laser output is obtained.

[0054] The method and apparatus of the embodiments of the present application use diamond Raman frequency shift technology to frequency shift a 1004.9nm high-power narrow-linewidth pulsed laser. Since diamond has a very high thermal conductivity, which can reach 2000 to 2200W / (m·K) at room temperature, the 1004.9nm single-frequency pulsed laser can be transformed into a high-power 1160.2nm laser of approximately 40W through the first-order Raman frequency shift of the diamond crystal. The 1160.2nm laser is then frequency tripled to ultimately achieve a 386.733nm laser output with a power of approximately 12W, with a laser output efficiency of up to 30%.

Claims

1. A photolithography method, characterized in that: include: The continuous wave laser with a wavelength of 1004.9nm is processed to obtain a high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9nm; The high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm is Raman-shifted using a diamond crystal to obtain a narrow-linewidth pulse laser with a wavelength of 1160.2 nm; Frequency tripling the narrow-linewidth pulse laser with a wavelength of 1160.2 nm to obtain a high-power single-frequency narrow-linewidth pulse laser with a wavelength of 386.733 nm; and The high-power single-frequency narrow-linewidth pulse laser with a wavelength of 386.733 nm is used to etch the object to be engraved.

2. The method according to claim 1, wherein The processing of the continuous wave laser with a wavelength of 1004.9 nm includes: Injecting a continuous wave laser with a wavelength of 1004.9 nm into the injection-locked system to obtain a single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm; and The single-frequency pulse laser with a wavelength of 1004.9 nm is amplified by an amplification system to obtain a high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm.

3. The method according to claim 1 or 2, wherein: The continuous wave laser with a wavelength of 1004.9 nm is realized by a semiconductor laser.

4. The method according to claim 2, wherein The amplification system is a three-stage amplification system.

5. The method according to claim 1, wherein The Raman frequency shifting of the high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm using a diamond crystal comprises: A high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9nm is input into a Raman frequency shift system consisting of an input mirror, a diamond crystal, and an output mirror to obtain a narrow-linewidth pulse laser with a wavelength of 1160.2nm.

6. A method for generating ultraviolet laser, characterized in that: include: The continuous wave laser with a wavelength of 1004.9nm is processed to obtain a high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9nm; Using a diamond crystal to Raman shift the high-power single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm to obtain a narrow-linewidth pulse laser with a wavelength of 1160.2 nm; and The narrow-linewidth pulse laser with a wavelength of 1160.2 nm is frequency tripled to obtain a high-power single-frequency narrow-linewidth pulse laser with a wavelength of 386.733 nm.

7. An ultraviolet laser generating device, characterized in that: include: A single-frequency semiconductor laser (1) with an output wavelength of 1004.9 nm, an injection locking system (2), an amplification system (3), a diamond Raman frequency shift system (4), and a frequency tripling system (5); The continuous wave laser with a wavelength of 1004.9 nm output by the single-frequency semiconductor laser (1) is injected into the injection locking system (2), and the injection locking system (2) outputs a single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm. The single-frequency pulse laser is amplified by the amplification system (3) to realize high-power narrow-linewidth pulse laser output with a wavelength of 1004.9 nm. The high-power narrow-linewidth pulse laser is passed through the diamond Raman frequency shift system (4) to realize narrow-linewidth pulse laser output with a wavelength of 1160.2 nm. The narrow-linewidth pulse laser with a wavelength of 1160.2 nm is injected into the triple frequency system (5) to realize laser output with a wavelength of 386.733 nm.

8. The device according to claim 7, wherein The injection locking system (2) comprises: a first output mirror (2-4), an electro-optical Q-switched switch (2-5), a first resonant cavity mirror (2-6) with piezoelectric ceramics, a second resonant cavity mirror (2-7), a gain medium (2-8), a third resonant cavity mirror (2-9), and a pump source laser (2-11) with an output wavelength of 941 nm; The first output mirror (2-4), the first resonant cavity mirror (2-6), the second resonant cavity mirror (2-7) and the third resonant cavity mirror (2-9) constitute the resonant cavity of the injection locking system (2); The electro-optical Q-switching switch (2-5) and the gain medium (2-8) are located in the resonant cavity; The continuous wave laser with a wavelength of 1004.9 nm output by the single-frequency semiconductor laser (1) is injected as seed light from the first output mirror (2-4) into the injection locking system (2); The laser light with a wavelength of 941 nm output by the pump source laser (2-11) is injected into the injection locking system (2) from the third resonant cavity mirror (2-9) as a pump source; The single-frequency narrow-linewidth pulse laser with a wavelength of 1004.9 nm generated by the resonant cavity is output through the first output mirror (2-4).

9. The device according to claim 8, wherein The gain medium (2-8) is Yb:YLF or Yb:KGW.

10. The device according to claim 7, wherein The diamond Raman frequency shift system (4) comprises an input mirror, a diamond crystal and a second output mirror; The input mirror and the second output mirror constitute the resonant cavity of the diamond Raman frequency shift system (4), and the diamond crystal is located in the resonant cavity.

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