Amorphous chip inductor and preparation method and application thereof

Abstract

The invention discloses an amorphous chip inductor and a preparation method and application thereof, and relates to the technical field of electronic devices.The preparation method comprises the steps that amorphous powder is subjected to primary coating treatment, heat treatment passivation and secondary coating treatment, the coated amorphous powder is subjected to granulation treatment, and soft magnetic amorphous powder is obtained; placing the copper sheet electroplated with the copper-tin composite layer in a mold, filling the mold with soft magnetic amorphous powder, and pressing to obtain an integrally molded inductor; the integrally-formed inductor is placed in an isostatic pressing cavity, and sintering is carried out by transmitting preset isostatic pressing pressure through an isostatic pressing gas medium at the preset isostatic pressing temperature, so that an integrally-sintered inductor is obtained; annealing the integrated sintered inductor to obtain an integrated annealed inductor; spraying paint on the integrated annealing inductor; folding copper sheets at the two ends of the integrated annealing inductor after paint spraying to obtain an amorphous chip inductor; the technical problem that the overall performance of the amorphous chip inductor can be reduced due to traditional high-temperature sintering molding or high-pressure compression molding can be solved.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic devices, and in particular to an amorphous chip inductor and a preparation method and application thereof. Background Art

[0002] Amorphous chip inductors, which use a soft magnetic metal core such as amorphous alloys, are key components in chip power supply modules, powering the front-ends of chips like GPUs and CPUs. As chips like GPUs and CPUs move toward miniaturization and higher density, amorphous chip inductors are required to be smaller, while also achieving higher inductance and current-carrying capacity within a smaller footprint. Addressing heat dissipation and loss issues is essential for achieving higher inductance and current-carrying capacity with amorphous chip inductors.

[0003] At present, amorphous chip inductors are usually prepared by high-temperature sintering or high-pressure compression molding, and the sintering temperature is above 700℃. The transformation point of amorphous powder in amorphous chip inductors is 400℃. Above 500℃, the amorphous powder will undergo a crystal transformation and crystallize, which is not conducive to the performance of amorphous performance. Generally, a high-temperature resistant silicone resin adhesive is used or the surface oxide layer of the amorphous powder is relied upon to form a bond. Therefore, high reliability requirements are placed on the silicone resin adhesive, which will reduce the insulation withstand voltage capability of the amorphous chip inductor. In addition, the oxide layer provides powder bonding force that damages the magnetic phase of the amorphous chip inductor itself, which is not conducive to the magnetic properties of the amorphous chip inductor. At the same time, the unidirectional high voltage of the amorphous chip inductor will cause serious grain orientation of the amorphous powder, and it is difficult to completely eliminate the huge internal stress, which is not conducive to reducing the magnetic loss of the amorphous chip inductor. In addition, the coil sintered at high temperature and high pressure is limited to a single turn or a single copper sheet, which is not conducive to the preparation of high-inductance amorphous chip inductors. Summary of the Invention

[0004] In view of the shortcomings of the existing technology, the purpose of the present invention is to provide an amorphous chip inductor and its preparation method and application, aiming to solve the technical problem that traditional high-temperature sintering or high-pressure molding will reduce the overall performance of amorphous chip inductors.

[0005] A first aspect of the present invention is to provide a method for preparing an amorphous chip inductor, the method comprising:

[0006] The amorphous powder is subjected to a primary coating treatment, passivated by heat treatment, and then subjected to a secondary coating treatment, and the coated amorphous powder is granulated to obtain soft magnetic amorphous powder;

[0007] Placing a copper sheet electroplated with a copper-tin composite layer in a mold, filling the soft magnetic amorphous powder, and pressing with a preset pressing pressure for a first preset time to obtain an integrated molded inductor;

[0008] Placing the one-piece molded inductor in an isostatic chamber, transmitting a preset isostatic pressure through an isostatic gas medium at a preset isostatic temperature, and sintering for a second preset time to obtain an one-piece sintered inductor;

[0009] annealing the integrated sintered inductor under a preset annealing atmosphere, a preset annealing temperature, and a preset annealing pressure for a third preset time to obtain an integrated annealed inductor;

[0010] spraying paint on the integrated annealed inductor;

[0011] Fold the copper sheets at both ends of the painted integrated annealed inductor to obtain an amorphous chip inductor.

[0012] Compared with the prior art, the beneficial effect of the present invention is that: a method for preparing an amorphous chip inductor provided by the present invention comprises: placing a copper sheet electroplated with a copper-tin composite layer in a mold, filling the soft magnetic amorphous powder, pressing the inductor for a first preset time at a preset pressing pressure to obtain an integrated molded inductor; placing the integrated molded inductor in an isostatic pressure chamber, transmitting the preset isostatic pressure through an isostatic gas medium at a preset isostatic temperature, sintering the inductor for a second preset time to obtain an integrated sintered inductor, firstly adopting low-pressure pressing and then adopting warm isostatic pressing technology to undergo isotropic equilibrium during the heating process. Pressure, rather than unidirectional hot pressing, promotes the densification of the one-piece molded inductor by virtue of the combined effect of lower temperature and lower pressure, which can effectively reduce loss and improve DC bias capability, thereby solving the problem of high-temperature crystallization of amorphous and the problem of high loss of amorphous high-voltage grain orientation; the one-piece sintered inductor is annealed for a third preset time under a preset annealing atmosphere, a preset annealing temperature and a preset annealing pressure to obtain an one-piece annealed inductor. Annealing is to further reduce loss and improve magnetic permeability, thereby solving the technical problem that traditional high-temperature sintering molding or high-pressure molding will reduce the overall performance of the amorphous chip inductor.

[0013] According to one aspect of the above technical solution, the preset pressing pressure is 50 MPa to 150 MPa, and the first preset time is 150 s to 200 s.

[0014] According to one aspect of the above technical solution, the preset isostatic pressure is 100 MPa to 300 MPa, the isostatic gas medium is argon, the preset isostatic temperature is 350° C. to 450° C., and the second preset time is 50 min to 70 min.

[0015] According to one aspect of the above technical solution, the preset annealing atmosphere is nitrogen, the preset annealing temperature is 400° C. to 460° C., and the third preset time is 110 min to 130 min.

[0016] According to one aspect of the above technical solution, the steps of the primary coating treatment specifically include:

[0017] Prepare a phosphoric acid and sodium silicate solution with a mass concentration of 0.5% to 2%, add the amorphous powder and soak and stir for 40 minutes to 60 minutes.

[0018] According to one aspect of the above technical solution, the heat treatment passivation is baking at 100°C to 140°C for 30min to 60min, the particle size of the soft magnetic amorphous powder is 200 mesh to 400 mesh, the fluidity is 30s to 40s, and the coating material of the secondary coating treatment is a silicone resin solution with a mass concentration of 1% to 3%.

[0019] According to one aspect of the above technical solution, the amorphous powder includes iron-silicon-boron-carbon-molybdenum amorphous alloy powder.

[0020] According to one aspect of the above technical solution, the anti-rust paint used for spray painting is acrylic paint, and the thickness of the spray paint is 0.15mm to 0.35mm.

[0021] A second aspect of the present invention is to provide an amorphous chip inductor prepared by the above-mentioned method for preparing the amorphous chip inductor.

[0022] A third aspect of the present invention is to provide applications of an amorphous chip inductor prepared by the above-mentioned method for preparing an amorphous chip inductor in circuit boards and electronic components. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the following description of the embodiments with reference to the accompanying drawings, in which:

[0024] Figure 1 This is a flowchart of a method for preparing an amorphous chip inductor according to the present invention;

[0025] Figure 2 Schematic diagram of the structure of the amorphous chip inductor in the present invention;

[0026] Description of main component symbols:

[0027] Soft magnetic amorphous powder 1, copper sheet 2, copper-tin composite layer 3. DETAILED DESCRIPTION

[0028] To make the objectives, features, and advantages of the present invention more readily apparent, the following detailed description of specific embodiments of the present invention is provided in conjunction with the accompanying drawings. The accompanying drawings illustrate several embodiments of the present invention. However, the present invention may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the present invention.

[0029] See also Figure 1 , which shows a method for preparing an amorphous chip inductor provided by the present invention, the preparation method includes steps S10-S15:

[0030] Step S10, performing a primary coating process on the amorphous powder, passivating it through heat treatment, and then performing a secondary coating process, and granulating the coated amorphous powder to obtain soft magnetic amorphous powder;

[0031] The amorphous powder includes FeSiBCMo amorphous alloy powder. Using FeSiBCMo amorphous alloy powder with high magnetic permeability can effectively improve the performance of amorphous chip inductors, thereby reducing the volume of amorphous chip inductors.

[0032] The primary coating uses a low-concentration mixture of phosphoric acid and sodium silicate to form an inorganic coating layer.

[0033] Specifically, a phosphoric acid and sodium silicate solution with a mass concentration of 0.5% to 2% is prepared, and the amorphous powder is put into the solution and immersed and stirred for 40 minutes to 60 minutes.

[0034] Preferably, the mass concentration of the phosphoric acid and sodium silicate solution is 0.5% to 2%, for example, 0.5%, 0.8%, 1%, 1.2%, 1.5%, 1.8% or 2%, but is not limited to the listed values, and other values not listed within the numerical range are also applicable.

[0035] Furthermore, in order to increase the surface resistance of the powder and reduce the eddy current loss, the amorphous powder is passivated by heat treatment.

[0036] Specifically, the baking temperature is 100° C. to 140° C. for 30 to 60 minutes. For example, the temperature may be 100° C., 110° C., 120° C., 130° C., or 140° C., but the temperature is not limited to the listed values. Other values not listed within the numerical range are also applicable.

[0037] Furthermore, the coating material for the secondary coating treatment is a silicone resin solution with a mass concentration of 1% to 3%, for example, it can be 1%, 1.2%, 1.5%, 1.8%, 2%, 2.2%, 2.5%, 2.8% or 3%, but is not limited to the listed values, and other unlisted values within the numerical range are also applicable.

[0038] Furthermore, the soft magnetic amorphous powder has a particle size of 200-400 mesh and a fluidity of 30s-40s.

[0039] Step S11, placing a copper sheet electroplated with a copper-tin composite layer in a mold, filling the soft magnetic amorphous powder, and pressing with a preset pressing pressure for a first preset time to obtain an integrated molded inductor;

[0040] Wherein, the preset pressing pressure is 50Mpa to 150Mpa, and the first preset time is 150s to 200s.

[0041] Furthermore, the use of low-pressure forming can effectively solve the problems of severe grain orientation and high internal stress caused by unidirectional high pressure.

[0042] Step S12, placing the integrally formed inductor in an isostatic chamber, applying a preset isostatic pressure via an isostatic gas medium at a preset isostatic temperature, and sintering for a second preset time to obtain an integrally sintered inductor;

[0043] It should be noted that conventional inductors are formed and sintered using unidirectional hot pressing. This unidirectional hot pressing results in uneven pressure distribution within the green body during hot pressing, particularly for non-isometric samples. This results in severe orientation of the lamellar or columnar grains, which can easily lead to anisotropy in the microstructure and mechanical properties of the ceramic sintered body.

[0044] In this embodiment, low-pressure pressing is first adopted, and then warm isostatic pressing sintering technology is used. During the heating process, it is subjected to isotropic balanced pressure rather than unidirectional hot pressing. The combined effect of lower temperature and lower pressure promotes the densification of the one-piece molded inductor, which can effectively reduce losses and improve DC bias capability, thereby solving the problem of high-temperature crystallization of amorphous and the problem of high loss of amorphous high-voltage grain orientation.

[0045] Preferably, the preset isostatic pressure is 100 MPa to 300 MPa, for example, 100 MPa, 150 MPa, 200 MPa, 250 MPa or 300 MPa, but is not limited to the listed values, and other values not listed within the numerical range are also applicable.

[0046] Preferably, the preset isostatic pressing temperature is 350° C. to 450° C., for example, 350° C., 400° C. or 450° C., but is not limited to the listed values, and other values not listed within the numerical range are also applicable.

[0047] Preferably, the isostatic gas medium is argon.

[0048] Step S13 , annealing the integrated sintered inductor for a third preset time under a preset annealing atmosphere, a preset annealing temperature, and a preset annealing pressure to obtain an integrated annealed inductor.

[0049] In order to further reduce the loss and improve the magnetic permeability, the integrated sintered inductor is annealed.

[0050] Preferably, the preset annealing temperature is 400°C to 460°C, for example, it can be 400°C, 410°C, 420°C, 430°C, 440°C, 450°C or 460°C, but is not limited to the listed values, and other unlisted values within the numerical range are also applicable.

[0051] Preferably, the third preset time is 110 minutes to 130 minutes, for example, 110 minutes, 120 minutes or 130 minutes, but is not limited to the listed values, and other values not listed within the numerical range are also applicable.

[0052] Step S14, spraying paint on the integrated annealed inductor;

[0053] Among them, in order to prevent rust, the integrated annealed inductor needs to be painted.

[0054] Preferably, the anti-rust paint of the spray paint is acrylic paint, and the thickness of the spray paint is 0.15mm to 0.35mm.

[0055] Step S15 , folding the copper sheets at both ends of the painted integrated annealed inductor to obtain an amorphous chip inductor.

[0056] In addition, the present invention also provides an amorphous chip inductor prepared by the above-mentioned method for preparing the amorphous chip inductor.

[0057] Among them, the size of the amorphous chip inductor is 12.8*8.2*4.0mm.

[0058] See also Figure 2 , shown is an amorphous chip inductor prepared by the above-mentioned method for preparing an amorphous chip inductor provided by the present invention.

[0059] The soft magnetic amorphous powder 1 wraps the copper sheet 2, and a copper-tin composite layer 3 is electroplated on both ends of the copper sheet 2 to form electrodes for electrically connecting to an external power supply.

[0060] In addition, the present invention also provides applications of the amorphous chip inductor prepared by the above-mentioned method for preparing the amorphous chip inductor in circuit boards and electronic components.

[0061] The present invention is further described below with specific examples:

[0062] Example 1

[0063] A first embodiment of the present invention provides a method for preparing an amorphous chip inductor, the method comprising steps S10-S15:

[0064] Step S10, performing a primary coating process on the amorphous powder, passivating it through heat treatment, and then performing a secondary coating process, and granulating the coated amorphous powder to obtain soft magnetic amorphous powder;

[0065] The amorphous powder comprises an iron-silicon-boron-carbon-molybdenum amorphous alloy powder, comprising 1% to 3% molybdenum, 2% to 6% carbon, 2% to 6% boron, 3% to 5.5% silicon, and the remainder being Fe. The primary coating is performed using a low-concentration mixture of phosphoric acid and sodium silicate to form an inorganic coating layer.

[0066] Specifically, a phosphoric acid and sodium silicate solution with a mass concentration of 0.5% to 2% is prepared, and the amorphous powder is added therein to be immersed and stirred for 50 minutes.

[0067] Preferably, the mass concentration of the phosphoric acid and sodium silicate solution is 1%.

[0068] Furthermore, in order to increase the surface resistance of the powder and reduce the eddy current loss, the amorphous powder is passivated by heat treatment.

[0069] Specifically, baking is performed at 120° C. for 30 to 60 minutes.

[0070] Furthermore, the coating material of the secondary coating treatment is a silicone resin solution with a mass concentration of 2%.

[0071] Furthermore, the soft magnetic amorphous powder has a particle size of 200-400 mesh and a fluidity of 30s-40s.

[0072] Step S11, placing a copper sheet electroplated with a copper-tin composite layer in a mold, filling the soft magnetic amorphous powder, and pressing with a preset pressing pressure for a first preset time to obtain an integrated molded inductor;

[0073] Wherein, the preset pressing pressure is 100 MPa, and the first preset time is 180 s.

[0074] Step S12, placing the integrally formed inductor in an isostatic chamber, applying a preset isostatic pressure via an isostatic gas medium at a preset isostatic temperature, and sintering for a second preset time to obtain an integrally sintered inductor;

[0075] Preferably, the preset isostatic pressure is 300 MPa, the preset isostatic temperature is 430° C., and the isostatic gas medium is argon.

[0076] Step S13 , annealing the integrated sintered inductor for a third preset time under a preset annealing atmosphere, a preset annealing temperature, and a preset annealing pressure to obtain an integrated annealed inductor.

[0077] Preferably, the preset annealing temperature is 430° C., and the third preset time is 120 minutes.

[0078] Step S14, spraying paint on the integrated annealed inductor;

[0079] Preferably, the anti-rust paint of the spray paint is acrylic paint, and the thickness of the spray paint is 0.15mm to 0.35mm.

[0080] Step S15 , folding the copper sheets at both ends of the painted integrated annealed inductor to obtain an amorphous chip inductor.

[0081] Example 2

[0082] A second embodiment of the present invention provides a method for manufacturing an amorphous chip inductor. The method for manufacturing the amorphous chip inductor in this embodiment differs from the method for manufacturing the amorphous chip inductor in the first embodiment in that:

[0083] The preset isostatic pressing temperature is 390°C.

[0084] Example 3

[0085] A third embodiment of the present invention provides a method for manufacturing an amorphous chip inductor. The method for manufacturing the amorphous chip inductor in this embodiment differs from the method for manufacturing the amorphous chip inductor in the first embodiment in that:

[0086] The preset isostatic pressing temperature is 390° C., and the preset isostatic pressing pressure is 350 MPa.

[0087] Example 4

[0088] A fourth embodiment of the present invention provides a method for manufacturing an amorphous chip inductor. The method for manufacturing the amorphous chip inductor in this embodiment differs from the method for manufacturing the amorphous chip inductor in the first embodiment in that:

[0089] The preset isostatic pressure is 350 MPa.

[0090] Comparative Example 1

[0091] The magnetic material of the first comparative example of the present invention is traditional iron-silicon-chromium, not amorphous powder, and the chip inductor is prepared by conventional molding at a pressure of 650 MPa.

[0092] Comparative Example 2

[0093] The magnetic material of the second comparative example of the present invention is traditional iron-silicon-chromium instead of amorphous powder, and the chip inductor is prepared by conventional molding at a pressure of 850 MPa.

[0094] Comparative Example 3

[0095] The magnetic material of the third comparative example of the present invention is traditional iron-silicon-chromium instead of amorphous powder, and the chip inductor is prepared by conventional molding at a pressure of 1050 MPa.

[0096] Comparative Example 4

[0097] The magnetic material of the fourth comparative example of the present invention is traditional iron-silicon-chromium instead of amorphous powder, and the chip inductor is prepared by the warm isostatic pressing sintering technology of the first embodiment.

[0098] Comparative Example 5

[0099] The magnetic material of the fifth comparative example of the present invention is traditional ferrite instead of amorphous powder. The chip inductor is prepared by high-temperature sintering technology, and the sintering temperature is 790°C.

[0100] Comparative Example 6

[0101] The magnetic material of the sixth comparative example of the present invention is traditional ferrite instead of amorphous powder. The chip inductor is prepared by high-temperature sintering technology, and the sintering temperature is 810°C.

[0102] Comparative Example 7

[0103] The magnetic material of the seventh comparative example of the present invention is traditional ferrite instead of amorphous powder. The chip inductor is prepared by high-temperature sintering technology, and the sintering temperature is 820°C.

[0104] Comparative Example 8

[0105] The eighth comparative example of the present invention provides a method for preparing an amorphous chip inductor. The method for preparing the amorphous chip inductor in this comparative example differs from the method for preparing the amorphous chip inductor in the first embodiment in that:

[0106] The preset isostatic pressing temperature is 200°C.

[0107] Comparative Example 9

[0108] A ninth comparative example of the present invention provides a method for preparing an amorphous chip inductor. The method for preparing the amorphous chip inductor in this comparative example differs from the method for preparing the amorphous chip inductor in the first comparative example in that:

[0109] The preset isostatic pressing temperature is 300°C.

[0110] Comparative Example 10

[0111] The tenth comparative example of the present invention provides a method for preparing an amorphous chip inductor. The difference between the method for preparing the amorphous chip inductor in this comparative example and the method for preparing the amorphous chip inductor in the first comparative example is that:

[0112] The preset isostatic pressing temperature is 470°C.

[0113] Comparative Example 11

[0114] The eleventh comparative example of the present invention provides a method for preparing an amorphous chip inductor. The difference between the method for preparing the amorphous chip inductor in this comparative example and the method for preparing the amorphous chip inductor in the first comparative example is that:

[0115] The preset isostatic pressing temperature is 200° C., and the preset isostatic pressing pressure is 350 MPa.

[0116] Comparative Example 12

[0117] The twelfth comparative example of the present invention provides a method for preparing an amorphous chip inductor. The difference between the method for preparing the amorphous chip inductor in this comparative example and the method for preparing the amorphous chip inductor in the first comparative example is that:

[0118] The preset isostatic pressing temperature is 300° C., and the preset isostatic pressing pressure is 350 MPa.

[0119] Comparative Example 13

[0120] The thirteenth comparative example of the present invention provides a method for preparing an amorphous chip inductor. The difference between the method for preparing the amorphous chip inductor in this comparative example and the method for preparing the amorphous chip inductor in the first comparative example is that:

[0121] The preset isostatic pressing temperature is 470° C., and the preset isostatic pressing pressure is 350 MPa.

[0122] Please refer to Table 1 below, which shows the performance test results of amorphous chip inductors prepared under different embodiments and comparative examples.

[0123] Table 1

[0124]

[0125]

[0126] It should be noted that the loss test method is to test the loss power of the amorphous chip inductor per unit volume (per cubic centimeter) under the conditions of a magnetic induction intensity of 50mT and a frequency of 100kHz; the inductance L@80A test method is the inductance of the amorphous chip inductor when a current of 80A passes through it, reflecting the DC bias capability.

[0127] According to the data of Examples 1 to 4 and Comparative Examples 8 to 13, within a certain range of preset isostatic pressing temperature and preset isostatic pressing pressure, the amorphous chip inductor can effectively reduce losses and improve DC bias capability.

[0128] According to the data of Example 1 and Comparative Examples 1 to 7, the chip inductor prepared from the iron-silicon-chromium alloy powder has excellent DC bias capability, but the loss is very high and the initial magnetic permeability is low (low inductance), which cannot meet the requirements of high inductance value. Although the chip inductor prepared from ferrite has low loss, the DC bias capability is poor. Therefore, the amorphous chip prepared from the amorphous powder provided by the present invention not only has lower loss, but also has excellent DC bias capability.

[0129] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "examples," "specific examples," or "some examples" means that a specific feature, structure, material, or characteristic described in conjunction with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0130] The above-described embodiments merely illustrate several implementations of the present invention. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person skilled in the art would be able to make numerous modifications and improvements without departing from the spirit of the present invention, all of which fall within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

Claims

1. A method for preparing an amorphous chip inductor, characterized in that: The preparation method comprises: The amorphous powder is subjected to a primary coating treatment, passivated by heat treatment, and then subjected to a secondary coating treatment, and the coated amorphous powder is granulated to obtain soft magnetic amorphous powder; Placing a copper sheet electroplated with a copper-tin composite layer in a mold, filling the soft magnetic amorphous powder, and pressing with a preset pressing pressure for a first preset time to obtain an integrated molded inductor; Placing the one-piece molded inductor in an isostatic chamber, transmitting a preset isostatic pressure through an isostatic gas medium at a preset isostatic temperature, and sintering for a second preset time to obtain an one-piece sintered inductor; annealing the integrated sintered inductor under a preset annealing atmosphere, a preset annealing temperature, and a preset annealing pressure for a third preset time to obtain an integrated annealed inductor; spraying paint on the integrated annealed inductor; Fold the copper sheets at both ends of the painted integrated annealed inductor to obtain an amorphous chip inductor.

2. The method for preparing an amorphous chip inductor according to claim 1, wherein: The preset pressing pressure is 50 MPa to 150 MPa, and the first preset time is 150 s to 200 s.

3. The method for preparing an amorphous chip inductor according to claim 1, wherein: The preset isostatic pressure is 100 MPa to 300 MPa, the isostatic gas medium is argon, the preset isostatic temperature is 350° C. to 450° C., and the second preset time is 50 min to 70 min.

4. The method for preparing an amorphous chip inductor according to claim 1, wherein: The preset annealing atmosphere is nitrogen, the preset annealing temperature is 400° C. to 460° C., and the third preset time is 110 min to 130 min.

5. The method for preparing an amorphous chip inductor according to claim 1, wherein: The steps of the primary coating treatment specifically include: Prepare a phosphoric acid and sodium silicate solution with a mass concentration of 0.5% to 2%, add the amorphous powder and soak and stir for 40 minutes to 60 minutes.

6. The method for preparing an amorphous chip inductor according to claim 5, wherein: The heat treatment passivation is baking at 100°C to 140°C for 30min to 60min, the particle size of the soft magnetic amorphous powder is 200 mesh to 400 mesh, the fluidity is 30s to 40s, and the coating material of the secondary coating treatment is a silicone resin solution with a mass concentration of 1% to 3%.

7. The method for preparing an amorphous chip inductor according to claim 1, wherein: The amorphous powder includes iron-silicon-boron-carbon-molybdenum amorphous alloy powder.

8. The method for preparing an amorphous chip inductor according to claim 1, wherein: The anti-rust paint of the spray paint is acrylic paint, and the thickness of the spray paint is 0.15mm to 0.35mm.

9. An amorphous chip inductor prepared by the method for preparing an amorphous chip inductor according to any one of claims 1 to 8.

10. Use of an amorphous chip inductor prepared by the method for preparing an amorphous chip inductor according to any one of claims 1 to 8 in circuit boards and electronic components.

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