Via metallization method and metallized glass substrate

Abstract

The application provides a via hole metallization method and a metallized glass substrate. The method can include: forming a via hole on a glass substrate; cleaning the via hole on the glass substrate; filling a metal conductive paste into the via hole; embedding a pretreated metal conductive piece into the filled via hole; and performing gradient sintering on the embedded glass substrate to form a metallized via hole on the glass substrate. Thus, the via hole metallization can be quickly realized, the process flow is simplified, the processing time is shortened, the process cost is reduced, the porosity of the via hole is reduced, and the bonding strength is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor packaging technology, and in particular to a method for metallizing through-holes in a glass substrate and a metallized glass substrate. Background Technology

[0002] Due to the excellent optical properties of glass substrates and the ability to achieve different functions by adjusting their composition, they are widely used in 3D integration, optoelectronic packaging, and other fields. However, the filling method for through-holes in glass substrates often employs copper electroplating. Specifically, due to the insulating nature of glass, it is necessary to pre-deposit a seed layer on the surface and inner walls of the holes using magnetron sputtering to facilitate subsequent electroplating. During the subsequent electroplating process, an electric current is applied to the glass substrate to make it the electroplating cathode, and its surface is then brought into contact with the electroplating solution. Copper ions in the solution absorb electrons to form elemental copper that adheres to the seed layer until the through-holes are filled with copper.

[0003] The above-mentioned electroplating hole-filling process has the following drawbacks: high process cost, long processing time, many influencing factors in the process, easy to cause defects and generate a series of chemical pollution problems. Summary of the Invention

[0004] In view of this, this application provides a method for metallizing through-holes in a glass substrate and a metallized glass substrate, to solve the technical problems existing in the above-mentioned existing through-hole filling methods for glass substrates.

[0005] In a first aspect, a method for metallizing through-holes in a glass substrate is provided. The method may include: forming through-holes in a glass substrate; cleaning the through-holes in the glass substrate; filling the through-holes with a metal conductive paste; embedding a pre-treated metal conductive component into the filled through-holes; and performing gradient sintering on the embedded glass substrate to form metallized through-holes in the glass substrate.

[0006] In a second aspect, a metallized glass substrate is manufactured by the through-hole metallization method for a glass substrate provided in any embodiment of this application.

[0007] In summary, the through-hole metallization method and metallized glass substrate provided in this application have at least the following beneficial effects: by replacing traditional electroplating with metal conductive paste filling, metal conductor embedding, and gradient sintering, the through-hole metallization of the glass substrate can be quickly achieved without a seed layer and complex sputtering and electroplating equipment, simplifying the process flow, shortening the processing time, reducing the process cost, and improving the porosity of the through-hole, increasing the bonding strength, and enhancing the reliability of thermal cycling.

[0008] Furthermore, embedding metallic conductive elements provides mechanical support, achieves high electrical connectivity, high density, and low resistivity, and can suppress the collapse or deformation of high aspect ratio through-holes during sintering, reducing the risk of voids. Additionally, since metallic conductive elements can provide heat dissipation paths, their combination with metallic conductive paste makes glass substrates suitable for fabricating high-power modules. Attached Figure Description

[0009] To more clearly illustrate the technical solutions in the specific embodiments of this application or the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0010] Figure 1 A schematic flowchart of a through-hole metallization method provided in an embodiment of this application is shown;

[0011] Figure 2 This illustration shows a flowchart of another through-hole metallization method provided in an embodiment of this application;

[0012] Figure 3 This diagram illustrates the effect of through-hole metallization according to an embodiment of this application. Detailed Implementation

[0013] To make the above and other features and advantages of this application clearer, the application is further described below with reference to the accompanying drawings. It should be understood that the specific embodiments given herein are for the purpose of explanation to those skilled in the art, and are exemplary only, not restrictive.

[0014] In the following description, numerous specific details are set forth to provide a thorough understanding of this application. However, it will be apparent to those skilled in the art that the specific details are not required to practice this application. In other instances, well-known steps or operations have not been described in detail to avoid obscuring this application.

[0015] One embodiment of this application provides a method for metallizing through-holes in a glass substrate. Figure 1 This document illustrates a flowchart of a through-hole metallization method according to an embodiment of this application. Figure 1 As shown, the through-hole metallization method includes the following steps.

[0016] S11, forming a through hole on the glass substrate.

[0017] One embodiment of this application involves a through-hole that meets a preset aspect ratio. The preset aspect ratio can be 5:1 or higher. It should be noted that the number of through-holes on the glass substrate is not limited to one. The aspect ratio can refer to the ratio of the depth to the lateral dimension of the through-hole.

[0018] One embodiment of this application relates to a glass substrate that can be a high-purity glass with a low coefficient of thermal expansion, such as borosilicate glass. The length, width, and thickness of the glass substrate can be set according to requirements. For example, the glass substrate is borosilicate glass with a length of 100 mm, a width of 100 mm, and a thickness of 300-500 micrometers.

[0019] The surface smoothness of the glass substrate reaches nanometer-level precision, that is, the surface roughness of the glass substrate meets the requirement that the arithmetic mean roughness (Ra) is no greater than 0.1 micrometers.

[0020] It should be noted that high purity refers to a glass content of over 80% in the glass substrate. For example, borosilicate glass contains over 70% silicon dioxide and over 10% boron trioxide. Low coefficient of thermal expansion can refer to a value not exceeding 3.3 × 10⁻⁶. -6 The expansion coefficient per Kelvin.

[0021] S12, Clean the through holes on the glass substrate.

[0022] In one embodiment of this application, the cleaning of the through-hole can be performed using ultrasound and plasma. Compared to the through-hole before cleaning, the smoothness of the inner wall of the cleaned through-hole is improved, and the metal adhesion performance is enhanced.

[0023] S13, fill the through hole with conductive metal paste.

[0024] One embodiment of this application relates to a metallic conductive paste, which can be a composite paste comprising a metal paste and inorganic fillers. The coefficient of thermal expansion of the metallic conductive paste matches that of the glass substrate.

[0025] In one embodiment of this application, the metal paste can be copper paste or silver paste, etc. The particle size of the metal powder in the metal paste is no greater than 100 nanometers. The inorganic filler can be glass powder or ceramic filler.

[0026] It should be noted that when the coefficient of thermal expansion of the conductive metal paste matches that of the glass substrate, the thermal stress of both can be controlled within the material's yield strength range, reducing the risk of thermal stress delamination. The ratio of the metal paste to the inorganic filler composite paste can be set based on empirical values.

[0027] In one embodiment of this application, in a vacuum environment, a metal conductive paste is injected into each through-hole of a glass substrate at a constant speed of 2 mm per second using high pressure, so that each through-hole is filled with the metal conductive paste and no air bubbles are generated.

[0028] It should be noted that high pressure can refer to pressures between 10 MPa and 50 MPa. A vacuum environment can be defined as an environment with a vacuum level not exceeding -0.09 MPa. This vacuum environment can be provided by a vacuum pump. Grouting in a vacuum environment reduces the partial pressure of dissolved gases in the grout, causing bubbles to expand, reducing their adhesion to the pore wall, and leading to their detachment along the pore wall.

[0029] S14, embed the pre-treated metal conductive component into the filled through hole.

[0030] One embodiment of this application involves a pre-treated metal conductive component that has been pre-treated to form a metal conductive component. The surface of the pre-treated metal conductive component meets a preset roughness.

[0031] In one embodiment of this application, the pre-treated metal conductive component may include a copper pillar, the surface of which meets a preset roughness.

[0032] In one embodiment of this application, the preset roughness can be that the Ra of the surface is not greater than 1.2 micrometers.

[0033] Thus, the pretreated metal conductive components can enhance their mechanical interlock with the metal conductive paste.

[0034] One embodiment of this application involves a pretreatment that can be acid washing, specifically using 1 volume of concentrated sulfuric acid (H2SO4, 98wt%, density 1.84g / cm³). 3 The metal conductive parts were cleaned with a pickling solution mixed with 5 volumes of deionized water (H2O).

[0035] In one embodiment of this application, the metallic conductive element can be an oxygen-free metal column with a purity of not less than 99.99%, a diameter of 50 micrometers, and a length of 360±2 micrometers. Optionally, the oxygen-free metal column can be a copper column.

[0036] S14, gradient sintering is performed on the embedded glass substrate to form metallized through holes on the glass substrate.

[0037] In one embodiment of this application, the embedded glass substrate may refer to a glass substrate with embedded metal conductive components.

[0038] In one embodiment of this application, gradient sintering may refer to at least two sintering processes at different temperatures, wherein the temperature of the latter sintering process is higher than that of the former.

[0039] In one embodiment of this application, a conductive path is formed by fusing the metal conductive component and copper particles in the metal conductive paste through gradient sintering, thereby forming a metallized through hole on the glass substrate.

[0040] In some embodiments, S11, cleaning the through holes on the glass substrate may include cleaning the through holes on the glass substrate using ultrasonic waves and plasma. Specifically, it may include: performing an initial cleaning of the through holes on the glass substrate using ultrasonic waves of a preset frequency; performing a secondary cleaning of the through holes after the initial cleaning using plasma; and rinsing the through holes after the secondary cleaning at least once using deionized water.

[0041] One embodiment of this application involves a preset frequency of 1 MHz or higher. Furthermore, the power density of the ultrasound is between 0.5 watts per square centimeter and 1 watt per square centimeter.

[0042] One embodiment of this application relates to plasma, which is a partially or completely ionized gas formed by a substance under conditions such as high temperature, strong electric field, laser, or high-energy radiation.

[0043] In one embodiment of this application, the plasma can be generated by a mixture of argon and oxygen in a volume ratio of 4:1, under specific power, specific pressure, and specific time conditions. The specific power is in the range of 200 watts to 500 watts. The specific pressure is in the range of 50 millitrile to 200 millitrile. The specific time is in the range of 1 minute to 5 minutes.

[0044] The deionized water involved in this application embodiment can be water that has been treated by processes such as ion exchange, reverse osmosis, and electrodialysis to remove almost all conductive ions (such as Na+) from the water. + Ca 2+ Cl - SO4 2- High-purity liquids (such as...).

[0045] In one embodiment of this application, a glass substrate with through holes is immersed in a cleaning solution and ultrasonically cleaned at a preset frequency for more than 30 seconds. This allows the removal of nanoscale particles from the walls of the through holes using a nanoscale particle removal cleaning technique, completing the first cleaning of the through holes and ensuring uniformity and adhesion during the metallization process.

[0046] After ultrasonic cleaning, a mixture of argon and oxygen gas is introduced into the glass substrate, and plasma is excited under specific conditions. This plasma bombards the walls of the through-holes, removing organic matter and microparticles, completing a second cleaning of the through-holes. This further improves the smoothness of the hole walls and enhances metal adhesion. The plasma-cleaned through-hole walls are then rinsed multiple times with deionized water to ensure their cleanliness.

[0047] In some embodiments of this application, in S14, gradient sintering includes: a first-stage sintering based on a first sintering temperature, a second-stage sintering based on a second sintering temperature, and a third-stage sintering based on a third sintering temperature. The first sintering temperature is lower than the second sintering temperature, and the second sintering temperature is lower than the third sintering temperature.

[0048] In one embodiment of this application, the first sintering temperature can be 250 degrees Celsius, the second sintering temperature can be 650 degrees Celsius, and the third sintering temperature can be 800 degrees Celsius.

[0049] Specifically, in the first stage of sintering, the glass substrate with embedded metal conductive components is sintered at 250 degrees Celsius for 30 minutes to volatilize the organic matter on the glass substrate and avoid residual carbon from causing a decrease in conductivity. The heating rate is 5 degrees Celsius per minute.

[0050] In the second stage of sintering, the glass substrate sintered in the first stage is sintered at 650 degrees Celsius for 60 minutes under the protection of a mixed gas with a nitrogen to hydrogen volume ratio of 95:5. This promotes the diffusion of metal particles on the surface of the through holes to form neck connections, densifies the metal particles, and reduces the interfacial resistance.

[0051] In the third stage of sintering, the glass substrate sintered in the second stage is sintered at 800 degrees Celsius for 20 minutes under argon protection. This causes the glass powder to melt and form interfacial bonds, achieving a porosity of no more than 3% and an interfacial bonding strength of 28 MPa.

[0052] Thus, the gradient sintering process can reduce the interfacial resistance and achieve a porosity of no more than 3%, and through mechanical anchoring and chemical bonding, the interfacial bonding strength can reach 28 MPa, improving the reliability of thermal cycling.

[0053] In some embodiments, in S14, after gradient sintering is performed on the embedded glass substrate to form metallized through-holes on the glass substrate, the through-hole metallization method may include: planarizing the surface of the glass substrate.

[0054] In one embodiment of this application, the surface of the glass substrate can be two surfaces connected by a through hole, including the upper surface and the lower surface of the glass substrate.

[0055] The planarization process involved in one embodiment of this application can refer to a process that uses physical or chemical methods to eliminate the roughness on the surface of a glass substrate caused by the metallization of through holes, so that the surface of the glass substrate reaches a flatness of micrometers.

[0056] In one embodiment of this application, the surface roughness of the glass substrate after planarization treatment is satisfied that Ra is not greater than 0.05 micrometers, and the thickness uniformity is controlled within ±1 micrometer.

[0057] In the above embodiments, the surface roughness of the glass substrate can be reduced and the surface can be made smooth through planarization treatment.

[0058] In some embodiments of this application, planarization of the surface of a glass substrate may include: chemically and mechanically polishing the surface of the glass substrate with a high-hardness abrasive slurry to planarize the surface of the glass substrate.

[0059] One embodiment of this application relates to a high-hardness abrasive polishing slurry that can be formed from an abrasive with a hardness higher than that of metals in a metal conductive component and lower than that of glass.

[0060] In one embodiment of this application, the high-hardness abrasive slurry can be an alumina slurry. Furthermore, the alumina slurry has a pH of 4 and a particle size of 0.1 micrometers.

[0061] One embodiment of this application relates to chemical mechanical polishing, which can refer to the removal of excess material from a surface through the synergistic effect of chemical corrosion and mechanical friction.

[0062] In one embodiment of this application, an oxidant in a high-hardness abrasive polishing slurry reacts chemically with the metal on the surface of a glass substrate to form a soft layer of metal oxide. Then, metal oxide abrasive grains (such as alumina abrasive grains) in the high-hardness abrasive polishing slurry, under a preset pressure and a preset rotation speed, rub against the glass substrate surface through a polishing pad to remove the soft layer, thereby reducing the surface roughness of the glass substrate and making the surface smooth. The preset pressure can be no less than 4 psi (pounds per square inch), and the preset rotation speed can be no less than 60 revolutions per minute.

[0063] In some embodiments, S11, forming a through hole on a glass substrate includes: cleaning the glass substrate; aligning a mask with the surface to be processed on the cleaned glass substrate, the mask having a preset through hole position; drilling a hole in the glass substrate at a target position corresponding to the preset through hole position using a femtosecond laser to form an initial hole penetrating the glass substrate; and etching the initial hole in the glass substrate using an etching solution to form a through hole on the glass substrate.

[0064] One embodiment of this application relates to a cleaning process that may include ultrasonic and plasma cleaning, as well as deionized water rinsing.

[0065] In one embodiment of this application, the glass substrate is first cleaned for 10 minutes using a 40 kHz ultrasonic cleaning solution. Then, plasma cleaning is employed to enhance surface activity and improve the adhesion of subsequent metal layers, resulting in a bonding strength greater than 5 N / cm. Finally, the glass substrate is rinsed multiple times with deionized water to ensure its cleanliness.

[0066] It should be noted that the plasma generation method involved in the embodiments of this application is the same as the aforementioned plasma generation method, and will not be repeated here.

[0067] In one embodiment of this application, the surface of the glass substrate to be processed can be either the upper or lower surface of the glass substrate. The upper and lower surfaces of the glass substrate refer to the two surfaces with the largest area of ​​the glass substrate.

[0068] One embodiment of this application relates to a mask used to selectively block the surface of a glass substrate to be processed using a selected mask pattern. The mask has preset through-hole positions, that is, the preset through-hole positions of the mask are transparent areas.

[0069] It should be noted that the preset through-hole position is used to determine the location of the through-holes in the glass substrate on the surface to be processed.

[0070] One embodiment of this application relates to a femtosecond laser capable of melting a glass substrate. For example, a laser with a wavelength of 1030 nanometers, a pulse width of 300 femtoseconds, and a power of 20 watts.

[0071] One embodiment of this application involves a target location that corresponds to a preset through-hole location on the surface of the glass substrate to be processed.

[0072] One embodiment of this application involves an initial hole that is a through hole with a conical aperture. Specifically, the initial hole is a micro-through hole with a diameter ranging from 50 micrometers to 100 micrometers, a conical aperture of 5 degrees to 8 degrees, a depth-to-width ratio of 5:1 or greater, and a hole wall roughness satisfying Ra of not less than 0.3 and not greater than 0.5. In other words, compared with a through hole, the initial hole has a conical aperture, rough hole wall, and lower diameter consistency.

[0073] One embodiment of this application relates to an etching solution that is a mixture capable of etching a glass substrate. In one embodiment of this application, the etching solution can be a mixture with strong acidity and strong oxidizing properties, such as a mixture of 5% fluorine oxide and 15% nitric acid.

[0074] In one embodiment of this application, firstly, a high-energy-density femtosecond laser is focused on the target position of the glass substrate, that is, the area on the surface to be processed corresponding to the preset via position of the mask, causing the glass material at and below the target position to melt and vaporize instantaneously, thereby forming an initial hole through laser drilling. Then, an etching solution is used to etch the glass substrate with the initial hole formed at a temperature of 25 degrees Celsius and an etching rate of 1.2 micrometers per minute for 5 minutes, thereby completely removing the glass material at the preset via position in the mask, correcting the taper after laser drilling, uniformly enlarging the hole diameter to a uniform size, and reducing the hole wall roughness so that Ra is no greater than 0.2 micrometers, thus forming a via that meets the expected conditions.

[0075] In some embodiments of this application, S14, embedding the pre-treated metal conductive element into the filled through-hole may include: embedding the pre-treated metal conductive element into the center of the filled through-hole. Specifically, this may include: aligning the pre-treated metal conductive element using an optical alignment system and embedding it into the center of the filled through-hole.

[0076] In one embodiment of this application, the center of the through hole can be the geometric center of the through hole.

[0077] In one embodiment of this application, an optical microscope or scanning electron microscope of an optical alignment system is used to determine the center of the filled through-hole and align the pre-treated metal conductive component with the center of the through-hole. The pre-treated metal conductive component is then embedded in the metal conductive paste using a fixture of the optical alignment system and placed at the center of the through-hole. This ensures the embedding accuracy of the metal conductive component, with its positional deviation from the center of the through-hole within 1 micrometer.

[0078] In the above embodiments, embedding the metal conductive component in the center of the filled through hole can provide a direct heat dissipation path, which can avoid the parasitic capacitance or inductance effect between the metal conductive component and the edge of the through hole, reduce signal attenuation and crosstalk, and improve signal integrity.

[0079] To fully understand the through-hole metallization method for glass substrates provided in the embodiments of this application, another through-hole metallization method is also provided in the embodiments of this application. Figure 2 This illustration shows a flowchart of another through-hole metallization method provided in an embodiment of this application, as shown below. Figure 2 As shown, the through-hole metallization method may include the following steps.

[0080] S21, glass substrate input.

[0081] S22, glass substrate cleaning.

[0082] The glass substrate cleaning process described in one embodiment of this application is the same as the aforementioned glass substrate cleaning process, and will not be repeated here.

[0083] S23, laser drilling.

[0084] The laser drilling method in one embodiment of this application is the same as the aforementioned step of drilling a hole in a glass substrate at a target position corresponding to a preset through-hole position using a femtosecond laser to form an initial hole penetrating the glass, and will not be repeated here.

[0085] S24, wet etching.

[0086] The wet etching method involved in one embodiment of this application is the same as the aforementioned step of etching the initial holes of the glass substrate with an etching solution to form through holes on the glass substrate, and will not be described again here.

[0087] S25, high aspect ratio hole cleaning.

[0088] One embodiment of this application involves a high aspect ratio via that is a through-hole. The cleaning steps for the high aspect ratio via are the same as those described in S12 above, which cleans the through-holes on the glass substrate, and will not be repeated here.

[0089] S26, copper paste filling.

[0090] The copper paste filling step in one embodiment of this application is the same as the aforementioned S13, which involves filling the through hole with the conductive metal paste, and will not be described again here.

[0091] S27, copper pillar is buried.

[0092] The copper pillar embedding involved in one embodiment of this application is the same as that described in S14 above, in which the pre-treated metal conductive component is embedded into the filled through hole, and will not be repeated here.

[0093] S28, gradient sintering.

[0094] The gradient sintering involved in one embodiment of this application is the same as that described in S15 above, in which gradient sintering is performed on the embedded glass substrate to form metallized through holes on the glass substrate, and will not be repeated here.

[0095] S29, surface planarization.

[0096] The surface planarization involved in one embodiment of this application is the same as the aforementioned steps for planarizing the surface of a glass substrate, and will not be repeated here.

[0097] In some of the above embodiments, after selecting a suitable glass substrate, initial holes with a wall roughness of Ra < 0.2 μm and an aspect ratio greater than 5:1 are first achieved using a traditional laser-induced etching method, followed by cleaning of the high aspect ratio holes. Then, copper paste filling, copper pillar embedding, and gradient sintering are used instead of electroplating to achieve a porosity of < 3% and a bonding strength of 28 MPa. Finally, chemical mechanical polishing is used to remove excess copper from the surface, ensuring that the surface roughness of the through-holes meets the requirement of Ra < 0.05 μm and that the thickness uniformity is controlled within ±1 μm.

[0098] Thus, copper paste filling, copper pillar embedding, and gradient sintering replace electroplating for filling holes. First, glass powder is added to the copper paste to adjust its coefficient of thermal expansion, ensuring it falls between the coefficients of thermal expansion of the copper pillar and the glass substrate. This reduces interfacial delamination or cracking caused by thermal stress during temperature cycling. Next, copper pillars are embedded as a conductive framework, improving the density of the sintered copper and reducing resistivity, while also mitigating the risk of voids from the copper paste filling. Finally, gradient sintering reduces interfacial resistance and achieves a porosity of <3%. Mechanical anchoring and chemical bonding achieve an interfacial bonding strength of 28 MPa, improving thermal cycling reliability.

[0099] Figure 3 This diagram illustrates the result of through-hole metallization according to an embodiment of this application. Figure 3 In the diagram, the upper, middle, and lower diameters of the vias on the glass substrate are 63.492 μm, 52.772 μm, and 72.562 μm, respectively. These diameters indicate the quality of the vias. 334.003 μm and 361.218 μm represent the glass thickness and the thickness of the copper metal after filling and polishing, respectively, indicating the via quality and polishing quality.

[0100] Depend on Figure 3 It can be seen that with an aspect ratio of 5:1, through-hole metallization on glass substrates can be well achieved, and compared with existing processes, the process cost is lower and the process time is shorter.

[0101] Another aspect of this application provides a metallized glass substrate, which is manufactured by the through-hole metallization method for glass substrates provided in any embodiment of this application.

[0102] It should be understood that the specific features, operations, and details described herein with respect to the methods of this application can also be similarly applied to the apparatus and system of this application, or vice versa. Furthermore, each step of the methods of this application described above can be performed by a corresponding component or unit of the apparatus or system of this application.

[0103] It should be understood that the various modules / units of the device of this application can be implemented wholly or partially through software, hardware, firmware, or a combination thereof. Each module / unit can be embedded in the processor of the electronic device in hardware or firmware form or independent of the processor, or it can be stored in the memory of the electronic device in software form for the processor to call to execute the operation of each module / unit. Each module / unit can be implemented as an independent component or module, or two or more modules / units can be implemented as a single component or module.

[0104] The technical features described above can be combined arbitrarily. Although not all possible combinations of these technical features are described, any combination of these technical features should be considered to be covered by this specification, provided that such combination does not contain contradictions.

[0105] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A method for metallizing through-holes in a glass substrate, characterized in that, The method includes: Forming through holes in a glass substrate; Clean the through holes on the glass substrate; The conductive metal paste is filled into the through-hole; The pre-treated metal conductive component is embedded in the filled through hole; Gradient sintering is performed on the embedded glass substrate to form metallized through holes on the glass substrate; The gradient sintering includes: a first-stage sintering based on a first sintering temperature, a second-stage sintering based on a second sintering temperature, and a third-stage sintering based on a third sintering temperature, wherein the first sintering temperature is lower than the second sintering temperature, and the second sintering temperature is lower than the third sintering temperature. During the first stage of sintering, the embedded glass substrate is sintered at 250 degrees Celsius for 30 minutes. In the second stage of sintering, the glass substrate sintered in the first stage is sintered at 650 degrees Celsius for 60 minutes under the protection of a mixed gas with a nitrogen to hydrogen volume ratio of 95:

5. In the third stage of sintering, the glass substrate sintered in the second stage is sintered at 800 degrees Celsius for 20 minutes under argon protection, so that the glass powder melts and forms interfacial bonding.

2. The method according to claim 1, characterized in that, After performing gradient sintering on the embedded glass substrate to form metallized through-holes, the method further includes: The surface of the glass substrate is planarized.

3. The method according to claim 1 or 2, characterized in that, The process of forming through holes on the glass substrate includes: The glass substrate is cleaned; Align the mask with the surface to be processed on the cleaned glass substrate, wherein the mask is provided with preset through-hole positions; A femtosecond laser is used to drill a hole in the glass substrate at a target position corresponding to the preset through-hole position, forming an initial hole that penetrates the glass substrate; The initial hole in the glass substrate is etched using an etching solution to form a through hole in the glass substrate.

4. The method according to claim 1, characterized in that, The conductive metal paste includes copper paste and inorganic fillers.

5. The method according to claim 4, characterized in that, The inorganic filler includes glass powder or ceramic filler.

6. The method according to claim 1, characterized in that, The pretreated metal conductive component includes a copper pillar, the surface of which meets a preset roughness.

7. The method according to claim 3, characterized in that, The cleaning of the through holes on the glass substrate includes: cleaning the through holes on the glass substrate using ultrasonic waves and plasma, including: The through holes of the glass substrate are initially cleaned using ultrasonic waves of a preset frequency. The through-holes after the initial cleaning are cleaned a second time using plasma. The through-holes after secondary cleaning should be rinsed at least once with deionized water.

8. The method according to claim 1, characterized in that, The step of filling the through hole with the conductive metal paste includes: embedding a pretreated conductive metal component into the center of the filled through hole, including: The pre-treated metal conductive component is aligned and embedded in the center of the filled through hole using an optical alignment system.

9. A metallized glass substrate, characterized in that, It is made by the through-hole metallization method for glass substrates according to any one of claims 1-8.

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