Impedance matching method, impedance matching device, radio frequency power supply equipment and storage medium

Abstract

The invention provides an impedance matching method, an impedance matching device, radio frequency power supply equipment and a storage medium, the impedance matching method is used for performing impedance matching on a radio frequency source and a load, and the radio frequency source is used for outputting pulse radio frequency electric energy. The impedance matching method comprises the step of performing impedance matching on a radio frequency source and a load at each high level stage of pulse radio frequency electric energy. And determining a target working frequency of the radio frequency source in each low-level stage of the pulse radio frequency electric energy. And in each low-level stage of the pulse radio frequency electric energy, adjusting the working frequency of the radio frequency source to be the target working frequency so as to perform impedance matching on the radio frequency source and the load in each low-level stage of the pulse radio frequency electric energy. Impedance matching can be realized when pulse radio frequency electric energy is output.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to an impedance matching method, an impedance matching device, a radio frequency power supply device, and a storage medium. Background Art

[0002] With the advancement of RF power technology, pulsed RF power has been proposed and widely used in various semiconductor devices. However, the output of pulsed RF power still faces numerous challenges. In particular, impedance matching is difficult to achieve during output, significantly impacting the output performance. Therefore, achieving impedance matching during the output of pulsed RF power, thereby improving output performance and preventing damage to the RF source, has become a critical issue. Summary of the Invention

[0003] The present application provides an impedance matching method, an impedance matching device, a radio frequency power supply device and a storage medium, which can achieve impedance matching when outputting pulsed radio frequency power to improve the output effect and avoid damage to the radio frequency source.

[0004] In a first aspect, an impedance matching method is provided for impedance matching between a radio frequency source and a load, wherein the radio frequency source is configured to output pulsed radio frequency power. The impedance matching method includes: performing impedance matching between the radio frequency source and the load during each high-level phase of the pulsed radio frequency power; determining a target operating frequency of the radio frequency source during each low-level phase of the pulsed radio frequency power; and adjusting the operating frequency of the radio frequency source to the target operating frequency during each low-level phase of the pulsed radio frequency power to achieve impedance matching between the radio frequency source and the load during each low-level phase of the pulsed radio frequency power.

[0005] In one possible embodiment, the impedance matching method is applied to an impedance matching device, comprising an impedance matching box connected to an output path of the RF source. Impedance matching the RF source and the load during each high-level phase of the pulsed RF power includes determining a target capacitance value of the impedance matching box during each high-level phase of the pulsed RF power. The capacitance value of the impedance matching box is adjusted to the target capacitance value to achieve impedance matching between the RF source and the load during each high-level phase of the pulsed RF power.

[0006] In one possible implementation, determining the target capacitance value of the impedance matcher during any high-level phase of the pulsed RF power includes: obtaining at least an impedance value of a load during any high-level phase of the pulsed RF power. Determining the target impedance value of the impedance matcher based at least on the impedance value of the load during any high-level phase of the pulsed RF power. Determining the target capacitance value of the impedance matcher based at least on the operating frequency of the RF source during any high-level phase of the pulsed RF power and the target impedance value of the impedance matcher.

[0007] In one possible implementation, determining the target operating frequency of the RF source in each low-level phase of the pulsed RF power includes obtaining an impedance value of a load in each low-level phase of the pulsed RF power. The target operating frequency of the RF source in each low-level phase of the pulsed RF power is determined based at least on the impedance value of the load in each low-level phase of the pulsed RF power, a target capacitance value of the impedance matcher, and a preset quality factor.

[0008] In a possible implementation, obtaining the impedance value of the load in any low-level stage of the pulsed radio frequency power includes: obtaining the resistance value of the load in any low-level stage of the pulsed radio frequency power.

[0009] In one possible implementation, determining the target operating frequency of the RF source at each low-level stage of the pulsed RF power based on at least the impedance value of the load at any low-level stage of the pulsed RF power, the target capacitance value of the impedance matcher, and the preset quality factor includes: determining a first frequency value and a second frequency value based on at least the impedance value of the load at any low-level stage of the pulsed RF power, the target capacitance value of the impedance matcher, and the preset quality factor. Determining the target operating frequency of the RF source at each low-level stage of the pulsed RF power based on the first frequency value and the second frequency value.

[0010] In one possible embodiment, the target capacitance value of the impedance matcher includes a parallel capacitance value and a series capacitance value. Determining the first frequency value and the second frequency value based on at least the impedance value of the load at any low-level stage of the pulsed RF power, the target capacitance value of the impedance matcher, and a preset quality factor includes: determining the first frequency value based on at least the impedance value of the load at any low-level stage of the pulsed RF power, the parallel capacitance value of the impedance matcher, and the preset quality factor. Determining the second frequency value based on at least the impedance value of the load at any low-level stage of the pulsed RF power, the series capacitance value of the impedance matcher, and the preset quality factor.

[0011] In a second aspect, an impedance matching device is also provided, wherein the impedance matching device adopts the above-mentioned impedance matching method to perform impedance matching between a radio frequency source and a load, and the radio frequency source is used to output pulsed radio frequency power. The impedance matching device includes an impedance matcher and a controller. The impedance matcher is used to perform impedance matching between the radio frequency source and the load in each high-level stage of the pulsed radio frequency power. The controller is used to control the impedance matcher to perform impedance matching between the radio frequency source and the load in each high-level stage of the pulsed radio frequency power, and to determine the target operating frequency of the radio frequency source in each low-level stage of the pulsed radio frequency power, thereby adjusting the operating frequency of the radio frequency source to the target operating frequency in each low-level stage of the pulsed radio frequency power, so as to perform impedance matching between the radio frequency source and the load in each low-level stage of the pulsed radio frequency power.

[0012] In a third aspect, a radio frequency power supply device is further provided, comprising a radio frequency source and an impedance matching device. The impedance matching device comprises an impedance matcher and a controller. The impedance matcher is configured to perform impedance matching between the radio frequency source and the load during each high-level phase of the pulsed radio frequency power. The controller is configured to control the impedance matcher to perform impedance matching between the radio frequency source and the load during each high-level phase of the pulsed radio frequency power, and to determine a target operating frequency of the radio frequency source during each low-level phase of the pulsed radio frequency power, thereby adjusting the operating frequency of the radio frequency source to the target operating frequency during each low-level phase of the pulsed radio frequency power, so as to perform impedance matching between the radio frequency source and the load during each low-level phase of the pulsed radio frequency power.

[0013] In a fourth aspect, a computer-readable storage medium is further provided, wherein a computer program is stored in the computer-readable storage medium. When the computer program is run on a computer or a processor, the above-mentioned impedance matching method is implemented.

[0014] The impedance matching method, impedance matching device, RF power supply equipment, and storage medium of the present application can perform impedance matching between the RF source and the load according to a conjugate matching method in each high-level stage of the pulsed RF power. In each low-level stage of the pulsed RF power, by first determining the target operating frequency of the RF source in each low-level stage of the pulsed RF power, the operating frequency of the RF source can be adjusted to the target operating frequency in each low-level stage of the pulsed RF power, thereby achieving impedance matching between the RF source and the load in each low-level stage of the pulsed RF power. As a result, impedance matching can be achieved in each high-level stage and each low-level stage of the pulsed RF power output by the RF source, thereby improving the output effect and avoiding damage to the RF power supply. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the background technology, the drawings required for use in the embodiments of the present application or the background technology will be described below.

[0016] Figure 1 Flowchart of an impedance matching method in one embodiment of the present application.

[0017] Figure 2 for Figure 1 A sub-flowchart of step S100 in FIG.

[0018] Figure 3 for Figure 2 A sub-flowchart of step S110 in FIG.

[0019] Figure 4 for Figure 1 A sub-flowchart of step S200 in FIG.

[0020] Figure 5 for Figure 4 A sub-flowchart of steps S210 and S220 in FIG.

[0021] Figure 6 for Figure 5 Another sub-flowchart of step S221 in .

[0022] Figure 7 Schematic diagram of an impedance matching device in one embodiment of the present application.

[0023] Figure 8 Schematic diagram of a radio frequency power supply device in one embodiment of the present application.

[0024] Explanation of the reference numerals: 1000, radio frequency power supply equipment, RF, radio frequency source, RFS, pulsed radio frequency power, 10, impedance matching device, 100, impedance matching box, 200, controller, RL, load. DETAILED DESCRIPTION

[0025] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0026] In the description of the embodiments of this application, it should be noted that, unless otherwise specified or limited, the terms "connected" and "connection" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; and direct connections or indirect connections through an intermediary. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0027] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of this application, unless otherwise specified, "plurality" means two or more.

[0028] In describing the embodiments of the present application, it should be noted that the terms "first," "second," and the like in the specification and claims of the present application and the accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, such that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein.

[0029] In addition, the terms "include" and "have" and any variations thereof are intended to cover a non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, product, or device.

[0030] See also Figure 1 , Figure 1 The figure is a flow chart of an impedance matching method in one embodiment of the present application. The impedance matching method is used to perform impedance matching between a radio frequency source and a load, wherein the radio frequency source is used to output pulsed radio frequency power. Figure 1 As shown, the present application provides an impedance matching method, which includes:

[0031] Step S100: performing impedance matching between the RF source and the load at each high-level stage of the pulsed RF power.

[0032] Step S200: determining a target operating frequency of the RF source in each low-level phase of the pulsed RF power.

[0033] Step S300 : During each low-level phase of the pulsed RF power, adjusting the operating frequency of the RF source to a target operating frequency to perform impedance matching between the RF source and the load during each low-level phase of the pulsed RF power.

[0034] Therefore, the above-mentioned impedance matching method in the present application can perform impedance matching between the RF source and the load according to the conjugate matching method in each high-level stage of the pulsed RF power. In each low-level stage of the pulsed RF power, by first determining the target operating frequency of the RF source in each low-level stage of the pulsed RF power, the operating frequency of the RF source can be adjusted to the target operating frequency in each low-level stage of the pulsed RF power, so as to achieve impedance matching between the RF source and the load in each low-level stage of the pulsed RF power. Therefore, impedance matching can be achieved in each high-level stage and each low-level stage of the pulsed RF power output by the RF source, so as to improve the output effect and avoid damage to the RF power supply.

[0035] The waveform of the pulsed radio frequency power in each high-level stage is a bipolar sine wave with a frequency of the radio frequency, and the waveform in each low-level stage is a straight wave with a voltage of zero.

[0036] It should be noted that the operating frequency of the RF source is also the frequency of the pulsed RF power output by the RF source, and adjusting the operating frequency of the RF source to the target operating frequency is also adjusting the frequency of the pulsed RF power output by the RF source to the target operating frequency.

[0037] Please also refer to Figure 2 , Figure 2 for Figure 1 The impedance matching method is applied to an impedance matching device, which includes an impedance matching box connected to the output path of the radio frequency source. Figure 1 、 Figure 2 As shown, step S100: in each high level stage of the pulsed RF power, impedance matching is performed between the RF source and the load, which may specifically include:

[0038] Step S110: determining a target capacitance value of the impedance matching box in any high-level phase of the pulsed RF power.

[0039] Step S120 : adjusting the capacitance value of the impedance matcher to a target capacitance value, so as to perform impedance matching between the RF source and the load in each high-level stage of the pulsed RF power.

[0040] Therefore, in the above-mentioned impedance matching method in the present application, in any high-level stage of the pulsed RF power, the RF source and the load have corresponding reactance values, and the target capacitance value of the impedance matcher is conjugated with the sum of the reactance value of the RF source and the reactance value of the load, so that the RF source and the load can achieve impedance matching in each high-level stage of the pulsed RF power.

[0041] Please also refer to Figure 3 , Figure 3 for Figure 2 A sub-flowchart of step S110 in FIG. Figure 2 、 Figure 3 As shown, step S110: in any high-level stage of the pulsed RF power, determining the target capacitance value of the impedance matching device may specifically include:

[0042] Step S111: obtaining at least the impedance value of the load in any high-level phase of the pulsed radio frequency power.

[0043] Step S112: determining a target impedance value of the impedance matching box at least according to the impedance value of the load in any high-level phase of the pulsed RF power.

[0044] Step S113: determining a target capacitance value of the impedance matching box at least according to the operating frequency of the RF source in any high-level phase of the pulsed RF power and the target impedance value of the impedance matching box.

[0045] In which, when the target impedance value of the impedance matcher is equal to the target capacitive reactance value of the impedance matcher, the target capacitance value of the impedance matcher can be the reciprocal of the product of the operating frequency of the RF source in any high-level stage of the pulsed RF power and the target impedance value of the impedance matcher; when the impedance matcher also has a reactance value, and the target impedance value of the impedance matcher can be the impedance value of the target capacitive reactance value and the overall reactance value of the impedance matcher, the target capacitance value of the impedance matcher is equal to the reciprocal of the product of the operating frequency of the RF source in any high-level stage of the pulsed RF power and the target capacitive reactance value of the impedance matcher, and the target capacitive reactance value of the impedance matcher can be the difference between the target impedance value and the reactance value of the impedance matcher.

[0046] Therefore, in the above-mentioned impedance matching method in the present application, the impedance value of the load in the high-level stage and the low-level stage of the pulsed RF power will change, so that the target impedance value of the impedance matcher is determined at least according to the impedance value of the load in any high-level stage of the pulsed RF power, and the RF source and the load can be impedance matched in each high-level stage of the pulsed RF power, and the target impedance value of the impedance matcher is adjusted by the target capacitance value, so that the target capacitance value of the impedance matcher can be determined at least according to the operating frequency of the RF source in any high-level stage of the pulsed RF power and the target impedance value of the impedance matcher.

[0047] Please also refer to Figure 4 , Figure 4 for Figure 1 A sub-flowchart of step S200 in FIG. Figure 1 、 Figure 4 As shown, step S200: determining the target operating frequency of the RF source in each low-level stage of the pulsed RF power may specifically include:

[0048] Step S210: Obtaining the impedance value of the load at any low-level stage of the pulsed RF power.

[0049] Step S220: determining a target operating frequency of the RF source in each low-level phase of the pulsed RF power based at least on the impedance value of the load in any low-level phase of the pulsed RF power, the target capacitance value of the impedance matcher, and the preset quality factor.

[0050] Therefore, the above-mentioned impedance matching method in the present application first obtains the impedance value of the load after the change in any low-level stage of the pulsed RF power, so as to determine the target operating frequency of the RF source in each low-level stage of the pulsed RF power at least based on the impedance value of the load in any low-level stage of the pulsed RF power, the target capacitance value of the impedance matcher and the preset quality factor.

[0051] Please also refer to Figure 5 , Figure 5 for Figure 4 A sub-flowchart of step S210 and step S220 in FIG. Figure 4 、 Figure 5 As shown, step S210: obtaining the impedance value of the load at any low-level stage of the pulsed RF power may specifically include:

[0052] Step S211: obtaining the resistance value of the load in any low-level stage of the pulsed RF power.

[0053] Therefore, in the above-mentioned impedance matching method in the present application, the resistance value of the load generally changes during the high-level stage and the low-level stage of the pulsed RF power. Therefore, based on the resistance value of the load at any low-level stage of the pulsed RF power, the target operating frequency of the above-mentioned RF source at each low-level stage of the pulsed RF power can be determined.

[0054] Among them, such as Figure 4 、 Figure 5 As shown, step S220: determining the target operating frequency of the RF source in each low-level stage of the pulsed RF power based on at least the impedance value of the load in any low-level stage of the pulsed RF power, the target capacitance value of the impedance matcher, and the preset quality factor, may specifically include:

[0055] Step S221: determining a first frequency value and a second frequency value based on at least an impedance value of the load in any low-level phase of the pulsed RF power, a target capacitance value of the impedance matcher, and a preset quality factor.

[0056] The preset quality factor is related to the resistance value of the load at any low-level stage of the pulsed RF power and the preset characteristic impedance value. The preset characteristic impedance value is the overall resistance value when the RF source and the load complete impedance matching, which can generally be 50Ω, 75Ω, 100Ω, etc.

[0057] Step S222: determining a target operating frequency of the RF source in each low-level phase of the pulsed RF power according to the first frequency value and the second frequency value.

[0058] The target operating frequency of the RF source in each low-level stage of the pulsed RF power may be an average or weighted average of the first frequency value and the second frequency value, or may be any one of the first frequency value and the second frequency value.

[0059] Therefore, the above-mentioned impedance matching method in the present application splits the target operating frequency into a first frequency value and a second frequency value according to the characteristics of the impedance matcher, and determines the first frequency value and the second frequency value respectively, so that the target operating frequency of the RF source in each low-level stage of the pulsed RF power can be determined according to the first frequency value and the second frequency value.

[0060] Please also refer to Figure 6 , Figure 6 for Figure 5 Another sub-flowchart of step S221 in FIG. The target capacitance value of the impedance matching box includes the parallel capacitance value and the series capacitance value. Figure 5 、 Figure 6 As shown, step S221: determining the first frequency value and the second frequency value based on at least the impedance value of the load in any low-level stage of the pulsed RF power, the target capacitance value of the impedance matcher, and the preset quality factor, may specifically include:

[0061] Step S223: determining a first frequency value at least according to an impedance value of the load in any low-level stage of the pulsed RF power, a parallel capacitance value of the impedance matcher, and a preset quality factor.

[0062] Step S223 may specifically include: determining a preset quality factor based on the resistance value of the load at any low-level stage of the pulsed RF power and a preset characteristic impedance value; and determining the first frequency value based on the parallel capacitance value of the negative impedance matcher and the preset quality factor. The preset quality factor may be the square root of the difference between the ratio of the preset characteristic impedance value and the resistance value of the load at any low-level stage of the pulsed RF power and a constant of 1.

[0063] Furthermore, the first frequency value may be a ratio of a preset quality factor to a product of a preset characteristic impedance value, a parallel capacitance value of the impedance matcher, and a constant 2π.

[0064] Step S224: determining a second frequency value based on at least the impedance value of the load in any low-level phase of the pulsed RF power, the series capacitance value of the impedance matching box, and a preset quality factor.

[0065] Step S224 may specifically include determining a second frequency value based on the resistance and reactance values of the load at any low-level stage of the pulsed RF power, the series capacitance value of the impedance matcher, and a preset quality factor. The second frequency value may be a ratio of the product of the resistance value of the load at any low-level stage of the pulsed RF power and the preset quality factor to the reactance value of the load at any low-level stage of the pulsed RF power.

[0066] Furthermore, the impedance matcher may also have a series inductance value to meet the reactance compensation that may be required for impedance matching. When the impedance matcher also has a series inductance value, the second frequency value may be the ratio of the product of the resistance value of the load at any low-level stage of the pulsed RF power and a preset quality factor to the sum of the reactance value of the load at any low-level stage of the pulsed RF power and the series inductance value.

[0067] Therefore, the impedance matching method in the present application can quickly determine the first frequency value and the second frequency value based on a small number of parameters.

[0068] Furthermore, the above-mentioned step S222: determining the target operating frequency of the RF source in each low-level stage of the pulsed RF power energy according to the first frequency value and the second frequency value may specifically include: when the first frequency value is equal to the second frequency value, determining that the target operating frequency of the RF source in each low-level stage of the pulsed RF power energy is the first frequency value or the second frequency value; when the first frequency value is not equal to the second frequency value, determining that the target operating frequency of the RF source in each low-level stage of the pulsed RF power energy is the first frequency value or the average of the first frequency value and the second frequency value or the weighted average of the first frequency value and the second frequency value.

[0069] In some embodiments, when the first frequency value is not equal to the second frequency value, the difference between the first frequency value and the second frequency value may be due to measurement error and / or calculation error. Therefore, the target operating frequency may be selected as the first frequency value, or an average of the first frequency value and the second frequency value, or a weighted average of the first frequency value and the second frequency value. The difference between the first frequency value and the second frequency value may also cause a significant change in the resistance value of the load due to a change in the duty cycle of the pulsed RF power, making it difficult to achieve impedance matching by adjusting the operating frequency. Therefore, the impedance matching method may further include: when the first frequency value is not equal to the second frequency value, comparing the resistance value of the load with a first constant; when the resistance value of the load is greater than the first constant, adjusting the target operating frequency of the RF source during each low-level phase of the pulsed RF power to the first frequency value; when the resistance value of the load is less than the first constant, adjusting the target operating frequency of the RF source during each low-level phase of the pulsed RF power to the first frequency value, and adjusting the series capacitance value of the impedance matching device to the target series capacitance value. The target series capacitance value may be the ratio of a preset quality factor to the product of a preset characteristic impedance value, the first frequency value, and the constant 2π.

[0070] Furthermore, when the preset characteristic impedance value is 50Ω, the first constant may be 25.

[0071] The impedance matching method of the present application, through the above steps, can perform impedance matching between the RF source and the load according to the conjugate matching method in each high-level stage of the pulsed RF power, and can adjust the operating frequency of the RF source to the target operating frequency in each low-level stage of the pulsed RF power to achieve impedance matching between the RF source and the load in each low-level stage of the pulsed RF power. As a result, impedance matching can be achieved in each high-level stage and each low-level stage of the pulsed RF power output by the RF source, thereby improving the output effect and avoiding damage to the RF power supply.

[0072] See also Figure 7 , Figure 7 FIG. 1 is a block diagram of an impedance matching device in an embodiment of the present application. Figure 7As shown, the present application also provides an impedance matching device 10, which uses the impedance matching method of any of the aforementioned embodiments to perform impedance matching between a radio frequency source RF and a load RL, where the radio frequency source RF is used to output pulsed radio frequency power RFS. The impedance matching device 10 includes an impedance matcher 100 and a controller 200. The impedance matcher 100 is used to perform impedance matching between the radio frequency source RF and the load RL during each high-level phase of the pulsed radio frequency power RFS. The controller 200 is used to control the impedance matcher 100 to perform impedance matching between the radio frequency source RF and the load RL during each high-level phase of the pulsed radio frequency power RFS, and to determine a target operating frequency of the radio frequency source RF during each low-level phase of the pulsed radio frequency power RFS, thereby adjusting the operating frequency of the radio frequency source RF to the target operating frequency during each low-level phase of the pulsed radio frequency power RFS, so as to perform impedance matching between the radio frequency source RF and the load RL during each low-level phase of the pulsed radio frequency power RFS.

[0073] The impedance matcher 100 may be connected between the radio frequency source RF and the load RL, and the controller 200 may be connected to both the impedance matcher 100 and the radio frequency source RF.

[0074] Please refer again Figure 1 .like Figure 1 As shown, impedance matching methods include:

[0075] Step S100: performing impedance matching between the RF source and the load at each high-level stage of the pulsed RF power.

[0076] Step S200: determining a target operating frequency of the RF source in each low-level phase of the pulsed RF power.

[0077] Step S300 : During each low-level phase of the pulsed RF power, adjusting the operating frequency of the RF source to a target operating frequency to perform impedance matching between the RF source and the load during each low-level phase of the pulsed RF power.

[0078] For more specific steps of the impedance matching method, please refer to the relevant content of the impedance matching method in any of the aforementioned embodiments, which will not be repeated here.

[0079] The impedance matcher 100 may include electronic components such as inductors and capacitors, and the impedance matcher 100 may be any one of T-type, π-type, L-type, and τ-type, or a combination of multiple types of T-type, π-type, L-type, and τ-type.

[0080] The controller 200 is primarily used to execute the specific steps of the impedance matching method described above. The controller 200 may include a general-purpose processor such as a central processing unit (CPU), a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other logic control devices such as programmable logic devices, discrete gate logic devices, and transistor logic devices. It may also be a microprocessor such as a micro control unit (MCU). The controller 200 may also include an adjustment device such as a rotary motor to adjust the impedance matching box 100.

[0081] The impedance matching method and impedance matching device 10 of the present application, through the above steps and structures, can perform impedance matching between the RF source RF and the load RL according to a conjugate matching method in each high-level stage of the pulsed RF power RFS, and can adjust the operating frequency of the RF source RF to the target operating frequency in each low-level stage of the pulsed RF power RFS to achieve impedance matching between the RF source RF and the load RL in each low-level stage of the pulsed RF power RFS. As a result, impedance matching can be achieved in each high-level stage and each low-level stage of the pulsed RF power RFS output by the RF source RF, thereby improving the output effect and avoiding damage to the RF power supply.

[0082] See also Figure 8 , Figure 8 FIG. 1 is a block diagram of a radio frequency power supply device 1000 in an embodiment of the present application. Figure 8 As shown, the present application further provides a radio frequency power supply device 1000 , which includes a radio frequency source RF and the impedance matching device 10 in any of the aforementioned embodiments.

[0083] Please refer again Figure 7 .like Figure 7As shown, the impedance matching device 10 includes an impedance matcher 100 and a controller 200. The impedance matcher 100 is configured to perform impedance matching between the RF source RF and the load RL during each high-level phase of the pulsed RF power RFS. The controller 200 is configured to control the impedance matcher 100 to perform impedance matching between the RF source RF and the load RL during each high-level phase of the pulsed RF power RFS, and to determine a target operating frequency of the RF source RF during each low-level phase of the pulsed RF power RFS. The controller 200 is configured to adjust the operating frequency of the RF source RF to the target operating frequency during each low-level phase of the pulsed RF power RFS, thereby performing impedance matching between the RF source RF and the load RL during each low-level phase of the pulsed RF power RFS.

[0084] The more specific structure of the impedance matching device 10 can be found in the relevant content of the impedance matching device 10 in any of the aforementioned embodiments, and will not be repeated here.

[0085] The radio frequency source RF may be used to output pulsed radio frequency power RFS, and the pulsed radio frequency power RFS may be transmitted to the load RL through the impedance matching device 10 .

[0086] The impedance matching method, impedance matching device 10, and RF power supply equipment 1000 of the present application, through the above steps and structures, can perform impedance matching between the RF source RF and the load RL according to a conjugate matching method in each high-level stage of the pulsed RF power RFS, and can adjust the operating frequency of the RF source RF to the target operating frequency in each low-level stage of the pulsed RF power RFS to achieve impedance matching between the RF source RF and the load RL in each low-level stage of the pulsed RF power RFS. As a result, impedance matching can be achieved in each high-level stage and each low-level stage of the pulsed RF power RFS output by the RF source RF, thereby improving the output effect and avoiding damage to the RF power supply.

[0087] The present application also provides a computer-readable storage medium, in which a computer program is stored. When the computer program runs on a computer or a processor, the impedance matching method of any of the aforementioned embodiments is implemented.

[0088] In the multiple embodiments provided in this application, it should be understood that the disclosed methods, devices, and equipment can be implemented in other ways. For example, the device embodiments described above are merely schematic; for example, the division of units is merely a logical function division, and there may be other division methods in actual implementation; for example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0089] Units described as separate components may or may not be physically separate, and components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of these units may be selected to achieve the purpose of this embodiment according to actual needs.

[0090] In addition, the functional units in various embodiments of the present invention may be integrated into a single processing unit, each unit may be physically included separately, or two or more units may be integrated into a single unit. The aforementioned integrated units may be implemented in the form of hardware or hardware plus software functional units.

[0091] The above-mentioned integrated unit implemented in the form of a software functional unit can be stored in a computer-readable storage medium. The above-mentioned software functional unit is stored in a storage medium and includes a number of instructions for causing a computer device (which can be a personal computer, server, or network device, etc.) to perform some steps of the method of each embodiment of the present invention. The aforementioned storage medium includes: a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk, etc., various media that can store program code.

[0092] The above description is only a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by any person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application; the embodiments of this application and the features of the embodiments can be combined with each other unless there is a conflict. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. An impedance matching method, characterized in that: Used to perform impedance matching between a radio frequency source and a load, wherein the radio frequency source is used to output pulsed radio frequency power; Wherein, the impedance matching method includes: At each high-level stage of the pulsed RF power, impedance matching is performed between the RF source and the load; Determine the target operating frequency of the RF source at each low level stage of the pulsed RF power; In each low level stage of the pulsed RF power, the operating frequency of the RF source is adjusted to the target operating frequency to perform impedance matching between the RF source and the load in each low level stage of the pulsed RF power.

2. The impedance matching method according to claim 1, wherein: The impedance matching method is applied to an impedance matching device, wherein the impedance matching device includes an impedance matching box connected to an output path of the radio frequency source; The impedance matching between the RF source and the load during each high-level phase of the pulsed RF power includes: determining a target capacitance value of the impedance matching device at any high-level stage of the pulsed radio frequency power; The capacitance value of the impedance matcher is adjusted to a target capacitance value to perform impedance matching between the RF source and the load in each high-level stage of the pulsed RF power.

3. The impedance matching method according to claim 2, wherein: The step of determining the target capacitance value of the impedance matching device during any high-level phase of the pulsed radio frequency power comprises: At least obtaining the impedance value of the load at any high level stage of the pulsed radio frequency power; determining a target impedance value of the impedance matching device based on at least an impedance value of the load at any high level stage of the pulsed radio frequency power; The target capacitance value of the impedance matching box is determined at least according to the operating frequency of the RF source in any high-level stage of the pulsed RF power and the target impedance value of the impedance matching box.

4. The impedance matching method according to claim 2, wherein: Determining the target operating frequency of the radio frequency source in each low-level stage of the pulsed radio frequency power includes: Obtain the impedance value of the load at any low-level stage of pulsed RF power; The target operating frequency of the RF source in each low-level stage of the pulsed RF power is determined based at least on the impedance value of the load in any low-level stage of the pulsed RF power, the target capacitance value of the impedance matcher, and the preset quality factor.

5. The impedance matching method according to claim 4, wherein: The obtaining of the impedance value of the load at any low-level stage of the pulsed radio frequency power includes: Obtain the resistance value of the load at any low-level stage of the pulsed RF power.

6. The impedance matching method according to claim 4, wherein: The step of determining the target operating frequency of the RF source in each low-level stage of the pulsed RF power according to at least the impedance value of the load in any low-level stage of the pulsed RF power, the target capacitance value of the impedance matcher, and the preset quality factor includes: Determining a first frequency value and a second frequency value based on at least an impedance value of the load at any low-level stage of the pulsed radio frequency power, a target capacitance value of the impedance matcher, and a preset quality factor; The target operating frequency of the radio frequency source in each low-level stage of the pulsed radio frequency power is determined according to the first frequency value and the second frequency value.

7. The impedance matching method according to claim 6, wherein: The target capacitance value of the impedance matcher includes a parallel capacitance value and a series capacitance value; The determining of the first frequency value and the second frequency value based on at least the impedance value of the load at any low-level stage of the pulsed RF power, the target capacitance value of the impedance matcher, and the preset quality factor includes: Determining a first frequency value based on at least an impedance value of the load at any low-level stage of the pulsed radio frequency power, a parallel capacitance value of the impedance matcher, and a preset quality factor; The second frequency value is determined based on at least an impedance value of the load in any low-level stage of the pulsed radio frequency power, a series capacitance value of the impedance matcher, and a preset quality factor.

8. An impedance matching device, characterized in that: The impedance matching device uses the impedance matching method according to any one of claims 1 to 7 to perform impedance matching between the radio frequency source and the load, and the radio frequency source is used to output pulsed radio frequency power; Wherein, the impedance matching device includes: An impedance matcher is used to perform impedance matching between the RF source and the load in each high-level stage of the pulsed RF power; The controller is configured to control the impedance matcher to perform impedance matching between the RF source and the load in each high-level stage of the pulsed RF power, and to determine a target operating frequency of the RF source in each low-level stage of the pulsed RF power, thereby adjusting the operating frequency of the RF source to the target operating frequency in each low-level stage of the pulsed RF power, so as to perform impedance matching between the RF source and the load in each low-level stage of the pulsed RF power.

9. A radio frequency power supply device, characterized in that: It comprises a radio frequency source and the impedance matching device as claimed in claim 8.

10. A computer-readable storage medium, characterized in that The computer-readable storage medium stores a computer program, and when the computer program is run on a computer or a processor, the impedance matching method according to any one of claims 1 to 7 is implemented.

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