36 results about "Pulsed radiofrequency" patented technology

A power generator has a first plurality of power amplifiers each configured to receive a first common supply voltage and output a plurality of discrete DC voltages. At least one of the plurality of discrete DC voltages may be varied by varying the first common supply voltage. The radio frequency power generator may also include a second plurality of power amplifiers that receive a second common supply voltage different from the first supply voltage or a different supply voltage. At least one discrete DC voltage of the plurality of discrete DC voltages may be varied by varying the second common supply voltage or a different supply voltage. The outputs of each power amplifier are superimposed in series to generate an output voltage for the power generator. One of the plurality of power amplifiers is activated or deactivated at a first time, while another of the plurality of power amplifiers is activated or deactivated at a second time.

Embodiments of this disclosure generally relate to systems used in semiconductor device manufacturing processes. [Solution] Embodiments provided herein generally include apparatus and methods for synchronizing and controlling the supply of RF bias voltage signals and pulsed voltage waveforms to one or more electrodes inside a plasma processing chamber. Embodiments of the Disclosure include methods and apparatus for synchronizing a pulsed radio frequency (RF) waveform with a pulsed voltage (PV) waveform so that the pulsed RF waveform is turned on during a first stage of the PV waveform and turned off during a second stage. The first stage of the PV waveform includes a sheath collapse stage. The second stage of the PV waveform includes an ion current stage.

The invention discloses a broadband radar distance extension target detection method and device, a terminal and a medium, and relates to the technical field of radar signal processing, and the method comprises the steps: obtaining each linear frequency modulation pulse radio frequency signal transmitted by a radar; in a walking and stopping mode, performing pulse compression on each linear frequency modulation pulse radio frequency signal by adopting pulse dechirp processing, and determining each dechirp processing signal; coherent energy accumulation is carried out according to the dechirp processing signals, and coherent accumulation signals are determined; converting the coherent accumulation signal to a frequency domain, and determining a dechirp pulse amplitude spectrum; and performing target detection according to the dechirp pulse amplitude spectrum, and determining a target detection result. According to the method, pulse dechirp processing and coherent energy accumulation are carried out on each received linear frequency modulation pulse radio frequency signal to obtain a coherent accumulation signal for subsequent target detection, so that the problem that in the prior art, when the signal-to-noise ratio is reduced, better anti-noise performance is difficult to realize with smaller calculation amount can be effectively solved.

Disclosed herein is a system and method for delivering pulsed RF power from a single generator to multiple loads in semiconductor manufacturing processes. Using a Single-Pole Multi-Throw (SPMT) switch, the controller dynamically selects a load in real time to receive one or a group of pulses. Each pulse is configurable with distinct RF power, frequency, and duration, enabling precise and flexible power allocation to components such as plasma source coils, zonal electrostatic chucks, or multiple reactors.

This disclosure provides an automatic cavity radio frequency voltage recovery system and method. The automatic cavity radio frequency voltage recovery system includes a low-level device, a power source, a high-frequency cavity, and a programmable control module. The low-level device is used to control the amplitude stabilization, phase stabilization, and frequency tuning of the radio frequency signal, monitor the pulsed and continuous radio frequency voltages of the high-frequency cavity, monitor the normal signal of the interlocking condition, and switch the output mode of the radio frequency signal. The power source is used to amplify the radio frequency signal input from the low-level device and feed it into the high-frequency cavity, and provide a normal power source signal. The high-frequency cavity is used to resonate the radio frequency power fed by the power source, establish a radio frequency electric field, and adjust the frequency of the high-frequency cavity through a fine-tuning loop. The programmable control module is used to restore the radio frequency voltage of the high-frequency cavity based on the control of the fine-tuning loop by the low-level device after the radio frequency voltage of the high-frequency cavity drops to zero. This automatic cavity radio frequency voltage recovery system and method can quickly achieve automatic recovery of the cavity radio frequency voltage.

This invention proposes a nano-transparent semiconductor electrothermal structure, its fabrication method, and a semiconductor electrothermal module. The nano-transparent semiconductor electrothermal structure comprises, from bottom to top, a first insulating layer, a substrate, an electrothermal layer, a second insulating layer, and electrodes. Both the first and second insulating layers are nanoscale insulating films formed by pulsed radio frequency synergistic physical vapor deposition of hexagonal boron nitride. The first insulating layer is formed on the back side of the substrate, and the second insulating layer is formed above the electrothermal layer. The electrothermal layer is a nanoscale electrothermal conversion film formed by aluminum-doped zinc oxide, tin-doped indium oxide, and fluorine-doped tin oxide containing yttrium trioxide. At least one of tantalum, beryllium, and niobium is embedded in the lattice gaps of the electrothermal layer. The electrothermal layer is used for electrothermal conversion when energized. Electrodes are disposed on both sides of the electrothermal layer, and the electrodes are in contact with the electrothermal layer and connected to a power source. This invention adds a first insulating layer to the back of the substrate, which, together with the second insulating layer above the heating layer, forms a double-sided hexagonal boron nitride insulating protection structure. This effectively blocks leakage paths on the back of the substrate, improving safety. At the same time, the double-sided high thermal conductivity insulating layers balance the thermal resistance on both sides of the substrate, improving heating uniformity. The two equal-thickness thin films ensure symmetrical stress on both sides of the substrate, preventing warping and deformation. The heating layer uses pulsed radio frequency synergistic physical vapor deposition to improve film uniformity. Moreover, the use of hybrid deposition reduces the indium content while still achieving a better-performing heating layer.

The application relates to a capacity calculation method and circuit applied to a low-power Cat1 gateway lithium sulfochloride battery, which comprises the following steps: collecting a sampling resistor voltage signal on a lithium sulfochloride battery power supply circuit at a set frequency and carrying out amplification processing, and recording the amplified voltage signal; charging a reference capacitor in an integration circuit using the amplified voltage signal and recording voltage variation of the reference capacitor to obtain a voltage variation curve segment; calculating power consumption in the collection period based on the voltage variation curve segment, recording the single-time power consumption; and carrying out difference calculation to obtain the residual power of the low-power Cat1 gateway lithium sulfochloride battery. The capacity calculation method and circuit applied to the low-power Cat1 gateway lithium sulfochloride battery disclosed by the application can convert aperiodic high-pulse radio frequency current into a smooth slope voltage, carry out impedance conversion and fast collection, and detect the power to obtain the accurate power of the lithium sulfochloride battery.

Provided is a plasma processing method capable of achieving flat etching process while suppressing vertical etching.The plasma processing method for plasma-etching a titanium nitride (TiN) film that forms a metal gate and contacts an insulating film on both sides includes the step of etching the titanium nitride (TiN) film by using plasmas that are generated by using a mixed gas of boron trichloride (BCl3) gas, nitrogen (N2) gas, and nitrogen trifluoride (NF3) gas and are generated by radio-frequency power modulated by a pulse, wherein the pulse has a first period with a first amplitude as its amplitude and a second period with a second amplitude as its amplitude and wherein the second amplitude is greater than 0 and less than the first amplitude.

A system for RF based frequency encoding utilizing a Bloch-Siegert shift, includes a controller, an RF encoding system, and an injection transformer simultaneous transmit and receive filter. The controller generates RF excitation pulses, RF based frequency encoding pulses, and a cancellation signal. The RF encoding system includes one or more RF coils configured to transmit the RF excitation pulses and RF based frequency encoding pulses, and to receive an MR signal from the subject where the MR signal includes a leakage signal induced by the RF based frequency encoding pulses. The injection transformer simultaneous transmit and receive filter is in signal communication with the controller and the RF encoding system. The injection transformer simultaneous transmit receive filter is configured to receive the cancellation signal, the MR signal including the leakage signal, and to cancel the leakage signal from the received MR signal to generate a filtered MR signal.

The invention relates to the technical field of silicon nitride etching, in particular to an ultra-low power dry etching method for silicon nitride, which comprises the following steps of: S1, fixing a workpiece to be etched on a chuck of a plasma etching machine, closing a cavity, and vacuumizing until the background pressure of the cavity is less than or equal to 2mTorr; s2, composite etching gas is introduced into the cavity; s3, starting a pulse radio frequency power supply to excite the composite gas to generate plasma; s4, regulating and controlling parameters of the chamber; s5, vacuumizing after etching is completed, and then introducing helium gas to purge the chamber until the pressure of the chamber is recovered to atmospheric pressure; s6, mixed gas is introduced, H2 plasma is introduced after ashing treatment, and etching is completed after dangling bonds on the surface of the silicon nitride are repaired. The invention discloses a method for dry etching of silicon nitride with extremely low power, and relates to the technical field of semiconductor manufacturing. According to the method, high-efficiency, high-selectivity and low-damage etching of the silicon nitride layer is realized under the extremely low radio frequency power through the collaborative design of composite gas system accurate proportioning, pulse radio frequency excitation and multi-field coupling process regulation and control.

Disclosed herein is a system and method for delivering pulsed RF power from multiple generators to a load in semiconductor manufacturing processes. The system employs a Multi-Pole Single-Throw (MPST) switch controlled by a controller that coordinates pulse generation timing across the generators. Latencies between pulse generation and switching for each generator are calibrated to a common clock to ensure precise synchronization. Delay elements can be introduced to place precisely each pulse from different generators into a mater pulse train. Additionally, a tailored waveform generator may be incorporated, particularly in providing bias voltage for an electrostatic chuck.

A plasma processing apparatus including a plasma processing chamber, a substrate support that is provided in the plasma processing chamber and on which a substrate is placed, a gas supply for supplying a processing gas to the plasma processing chamber, an RF power source for supplying pulsed RF power to the plasma processing chamber and / or the substrate support, and forming plasma from the processing gas, and a circuitry for controlling the supply of the pulsed RF power, in which the control device controls the RF power source such that an increasing function of a power level from a supply starting point of the pulsed RF power to a peak appearing point is a downward convex function, and / or a decreasing function of a power level from a peak ending point of the pulsed RF power to a supply ending point is a downward convex function.

The invention discloses a radio frequency assisted freezing system which comprises a radio frequency generation module, a radio frequency processing module, a low-temperature freezing module and an optical fiber temperature measurement module, the radio frequency generation module can provide stable pulse radio frequency signals and comprises a radio frequency generator, a relay pulse generator and an impedance matcher, and the relay pulse generator and the impedance matcher are electrically connected with the radio frequency generator. The radio frequency processing module is used for providing a radio frequency action space for food and comprises a radio frequency processing device, the low-temperature freezing module can provide freezing cooling capacity for the system and comprises a low-temperature refrigerator, the impedance matcher and the radio frequency processing device are arranged in the low-temperature refrigerator, and the optical fiber temperature measuring module is arranged on the outer side of the low-temperature refrigerator; and the optical fiber temperature measurement module is used for accurately monitoring the food temperature. Through the synergistic effect of the radio frequency field and low-temperature freezing, the crystallization process of water molecules in the food can be effectively interfered, the food is promoted to generate an obvious supercooling phenomenon, a large number of ice nucleuses are formed at the temperature lower than the freezing point in an explosive mode finally, and the final quality of the frozen food is greatly improved.

The embodiment of the invention provides a cerebral blood flow synchronous array coil system and a cerebral blood flow detection method, and belongs to the technical field of magnetic resonance imaging. The device comprises a controller, a radio frequency power amplifier, a neck coil, a signal source and a coil connector, the controller is used for receiving a first enable signal generated by the MRI equipment cabinet, generating a second enable signal and triggering the neck coil and the matched radio frequency power amplifier to synchronously enter a working state; the signal source is used for providing a second radio frequency pulse; after receiving the second enable signal, the radio frequency power amplifier enters a working state, amplifies a second radio frequency pulse and sends the amplified second radio frequency pulse to the neck coil; the neck coil receives the second radio frequency pulse and is used for applying a pulse signal to a neck area and receiving a second enable signal to enter a working state; the coil connector is used for signal transmission between execution components. According to the embodiment, the accuracy and efficiency of cerebral blood flow detection of the experimental subject can be improved.

This invention relates to the field of silicon nitride etching technology, specifically a method for dry etching of silicon nitride using extremely low power, comprising the following steps: S1. Fixing the workpiece to be etched on the chuck of a plasma etching machine, closing the chamber, and evacuating to a chamber background pressure ≤2mTorr; S2. Introducing a composite etching gas into the chamber; S3. Starting a pulsed radio frequency power supply to excite the composite gas to generate plasma; S4. Adjusting various parameters of the chamber; S5. After etching is completed, evacuating the chamber, then introducing helium gas to purge the chamber until the chamber pressure returns to atmospheric pressure; S6. Introducing a mixed gas, ashing treatment, and then introducing H2 plasma to repair dangling bonds on the silicon nitride surface to complete the etching. This invention discloses a method for dry etching of silicon nitride using extremely low power, relating to the field of semiconductor manufacturing technology. This method, through the synergistic design of "precisely proportioned composite gas system + pulsed radio frequency excitation + multi-field coupling process control," achieves efficient, highly selective, and low-damage etching of silicon nitride layers at extremely low radio frequency power.

A control method for an energy-based surgical instrument includes activating a combined radio frequency (RF) and ultrasound operation, which may be a sealing operation or a sealing and transection operation. The sealing operation includes activating a pulsed RF operation with an ultrasound sealing operation between pulses of the RF operation. A control method for the energy-based surgical instrument includes determining whether an ultrasonic blade of the surgical instrument contacts a tissue pad of the surgical instrument and, if so, allowing ultrasonic energy delivery at a reduced energy level or preventing ultrasonic energy delivery. Other embodiments are described and claimed.

A system and method for pulsing radio frequency (RF) coils. [Solution] One method includes supplying a first RF signal to a first impedance matching circuit coupled to a first RF coil, supplying a second RF signal to a second impedance matching circuit coupled to a second RF coil, and pulsing the first RF signal between a first parameter level and a second parameter level. The method also includes pulsing the second RF signal between a third parameter level and a fourth parameter level in reverse synchronization with the pulsing of the first RF signal.

An RF power generator having a fixed power generation section, the fixed power generation section including a first plurality of power amplifiers each configured to receive a supply voltage and output a first voltage, and the RF power generator also includes a weighted power generation section including a plurality of weighted power amplifier modules, each weighted power amplifier module including a weighted power amplifier and an associated transformer, each weighted power amplifier of the weighted power amplifier modules receiving a respective weighted supply voltage, the voltage across the transformer of each weighted power amplifier module being a fractional multiple of the first voltage.

The invention discloses a steep pulse, radio frequency and microwave all-in-one machine, and relates to the field of tumor treatment, the all-in-one machine is configured as a treatment device which selectively delivers treatment energy to target tissue in a time division multiplexing mode, and the treatment device comprises a host, a multi-mode energy generation module, an intelligent interface module and an integrated treatment head module, the host is a display-control integrated vertical operating platform, rollers are arranged on the bottom side of the host, and a central control unit, a power conversion unit, a cooling circulation unit and a plurality of independent shielding chambers are arranged on the inner side of a shell of the host; according to the steep pulse, radio frequency and microwave all-in-one machine, the multi-mode energy generation module, the intelligent consumable identification interface and the integrated multi-mode treatment head are integrated, a scheme of unified control, safety isolation and multi-mode treatment head cooperative driving is constructed, cooperative control over different energies and treatment probes can be achieved, and the treatment efficiency is improved. And particularly, the problem that multi-energy equipment is tedious in discrete operation is solved.

Systems and methods for pulsing radio frequency (RF) coils are described. One of the methods includes supplying a first RF signal to a first impedance matching circuit coupled to a first RF coil, supplying a second RF signal to a second impedance matching circuit coupled to a second RF coil, and pulsing the first RF signal between a first parameter level and a second parameter level. The method includes pulsing the second RF signal between a third parameter level and a fourth parameter level in reverse synchronization with the pulsing of the first RF signal.

Disclosed is a system and method for delivering pulsed RF power and optionally tailored waveform voltage from multiple generators to multiple loads in semiconductor manufacturing processes. A controller designs master pulse train schemes for each load, defining pulse attributes such as RF frequency, power level, and duration. The controller coordinates pulse generation by the generators and dynamically routes the pulses to designated loads via a Multi-Pole Multi-Throw (MPMT) switch based on the schemes, ensuring flexibility and precision.

A RF power generator having a fixed power generation section. The fixed power generation section includes a first plurality of power amplifiers each configured to receive a supply voltage and to output a respective first voltage. The RF power generator also includes a weighted power generation section including a plurality of weighted power amplifier modules. Each weighted power amplifier module includes a weighted power amplifier and an associated transformer. Each weighted power amplifier of the weighted power amplifier module receives a respective weighted supply voltage. The voltage across the transformer of each weighted power amplifier module is a fraction of the first voltage.

The invention discloses a titanium oxide nanosheet photoelectric film material and a preparation method thereof, and belongs to the technical field of functional films. According to the preparation method, the oxygen content controllable pulse radio frequency temperature control reactive sputtering technology is adopted, self-organization growth and amorphous stable regulation and control of the titanium oxide nanosheets are achieved at the temperature of 50-100 DEG C, and therefore the titanium oxide thin film material of the amorphous porous layered nanosheet island-shaped structure is obtained. The titanium oxide nanosheet photoelectric thin film material prepared by the invention has an amorphous porous layered nanosheet island-shaped tissue structure, and the thin film material is endowed with excellent optical modulation performance and electrochemical energy storage performance, so that the thin film material can synchronously realize storage and release of electric quantity in an electrochromic process; and the energy storage state can be visually represented through color change, and the method is suitable for the fields of photoelectric multifunctional devices, intelligent dimming energy storage devices and other related advanced energy devices.

The application discloses a wide-band dual-polarization signal synchronous receiving and polarization remote high-speed switching system and method based on a net, which comprises a serial port network interface service integrated machine, a mechanical switch control circuit and a polarization switching matrix; the serial port network interface service integrated machine is provided with at least one serial port and two network interfaces, is connected with the mechanical switch control circuit in communication through the serial port, and is connected with a remote control computer and the net in communication through the network interface. The system and method disclosed by the application can realize wide-band (1GHz-40GHz or higher frequency), single-antenna transmission and dual-polarization receiving, remote control polarization switching and other functions. The polarization remote high-speed switching is realized by two control signals, one of which is a synchronization signal provided by the net and consistent with a transmission pulse radio frequency signal, and is used for automatically controlling the switching of an electronic switch, and the other is a control signal generated by the mechanical switch control circuit, and is used for realizing the switching control of the mechanical switch.

Provided is a technology that makes it possible to improve plasma processing performance in a plasma processing device. This plasma processing device comprises: a chamber; a substrate support part which is disposed in the chamber and which has a lower electrode; an upper electrode which is disposed above the substrate support part; a lower voltage signal generator which is electrically connected to the lower electrode, which is configured to generate a lower voltage signal, and in which the lower voltage signal has a sequence of voltage pulses in a first period of a repetition cycle; an RF signal generator which is configured to generate an RF signal in order to generate plasma in the chamber; and an upper voltage signal generator which is electrically connected to the upper electrode, which is configured to generate an upper voltage signal, and in which the upper voltage signal has a gradient voltage pattern that gradually changes from a first voltage level to a second voltage level in the first period.

In some implementations, a method for performing a plasma process in a chamber is provided, including: supplying a process gas to the chamber; applying pulsed RF power to the process gas in the chamber, the pulsed RF power being provided at a predefined frequency, wherein the applying of the pulsed RF power to the process gas generates a plasma in the chamber; during the applying of the RF power, applying a pulsed DC current to a magnetic coil that is disposed over the chamber, wherein the pulsed DC current is provided at the predefined frequency.

A non-transitory computer-readable medium stores instructions that, when executed by a processor, cause the processor to determine, based on a commanded output voltage, which power amplifiers of fixed and weighted power generation sections are needed, and generate control signals accordingly. An RF power generator includes a plurality of power amplifiers configured to generate a composite output voltage, comprising a first number and a second number of power amplifiers, wherein the second number is greater than the first. A controller activates no more than the first number of power amplifiers at one time and rotates activation among the second number such that each has on periods and off periods.

The invention discloses a radio frequency power supply and semiconductor process equipment. The radio frequency power supply comprises a DC power supply module used for converting an input AC voltage into a DC voltage according to a voltage control signal; the radio frequency module is used for converting the direct-current voltage into pulse radio frequency power according to the driving signal and outputting the pulse radio frequency power; the control module is used for generating a voltage control signal and a driving signal according to the set pulse power, the set duty ratio and the set pulse frequency, obtaining a corresponding actual reflection power coefficient and / or actual average power according to the pulse radio frequency power, and comparing the actual reflection power coefficient and / or the actual average power with set parameters to adjust the phase difference of the voltage control signal and / or the driving signal. The radio frequency power supply is good in dynamic response performance, the output pulse radio frequency power can be adjusted in real time according to the specific use environment, and the output pulse radio frequency power is more stable.

An RF pulse generator may comprise a pair of phase-locked lasers that output optical tones offset in frequency by a set amount. The resulting optical signal is periodically transmitted and blocked by an optical switch to generate a pulsed optical signal. A photodiode is irradiated with the pulsed optical signal to generate a corresponding pulsed RF signal having a frequency corresponding to the frequency difference of the optical tones generated by the phase-locked lasers. An antenna may be connected to and driven by the photodiode to electromagnetically transmit the pulsed RF signal.

This invention discloses a system and method for transmitting pulsed radio frequency power from multiple generators to a single load. The system employs a multi-pole single-throw (MPST) switch, controlled by a controller, to coordinate the pulse generation timing among multiple generators. The delay between pulse generation and switch switching for each generator is calibrated based on a common clock to ensure precise synchronization. Delay elements can be introduced to precisely integrate each pulse from different generators into the master pulse sequence. Furthermore, a custom waveform generator can be configured, making it particularly suitable for scenarios providing bias voltage for electrostatic chucks.