Release agent composition for light irradiation stripping, laminate, and method for manufacturing processed semiconductor substrate or electronic device layer

Abstract

Provided is a release agent composition for forming a release agent layer in a laminate which can firmly bond a support substrate to a semiconductor substrate or an electronic device layer during processing of the semiconductor substrate or the electronic device layer, and which can prevent the support substrate from being adhered to the semiconductor substrate or the electronic device layer after processing of the substrate. The present invention relates to a release agent composition which can easily separate a support substrate from a semiconductor substrate or an electronic device layer by light irradiation, and a release agent layer which is used for the laminate and can be peeled by light irradiation, and which can be easily separated from the semiconductor substrate or the electronic device layer by light irradiation even if the release agent composition is only irradiated by light without heating after light irradiation. The semiconductor substrate or the electronic device layer can be easily separated from the support substrate even when the semiconductor substrate or the electronic device layer is separated from the support substrate. The stripping agent composition for light irradiation stripping comprises the following components: (i) a composition containing a polymer containing a photosensitive gas generating part, and the photosensitive gas generating part receives the light and generates a chemical reaction to generate a gas, and (ii) a polymer containing a polymer containing a polymer containing a polymer containing a polymer containing a polymer containing a polymer containing a polymer containing a polymer containing a polymer containing a polymer containing a polymer containing a polymer containing a polymer containing a polymer containing a polymer containing a polymer containing a polymer. Or (ii) a composition containing a polymer and a compound including a photosensitive gas generating site that generates a gas by a chemical reaction by receiving the light.

Description

Technical Field

[0001] The present invention relates to a stripping agent composition for light irradiation stripping, a laminate, and a method for producing a processed semiconductor substrate or electronic device layer. Background Art

[0002] Semiconductor integration technology is now pursuing further integration by integrating (stacking) semiconductor wafers in three dimensions, while conventionally integrating two-dimensional wafers. This three-dimensional stacking technique involves integrating multiple layers using through silicon vias (TSVs) while interconnecting them. During multi-layer integration, the opposite side (i.e., the backside) of each wafer to be integrated, facing the circuitry, is thinned by grinding, and the thinned semiconductor wafers are then stacked.

[0003] The semiconductor wafer (also referred to as wafer) before thinning is bonded to a support in order to be ground using a grinding device. The bonding at this time must be easy to peel off after grinding, so it is called temporary bonding. This temporary bonding must be easy to disassemble from the support. When a large force is applied to the disassembly, the thinned semiconductor wafer is sometimes cut or deformed. In order to avoid such a situation, it is easy to disassemble. However, when the back of the semiconductor wafer is ground, it is not preferred that it detaches or deviates due to the grinding stress. Therefore, the performance pursued by temporary bonding is: to withstand the stress during grinding and to be easy to disassemble after grinding.

[0004] For example, the following properties are sought: high stress (strong adhesive force) in the planar direction during polishing, and low stress (weak adhesive force) in the longitudinal direction during disassembly.

[0005] In this regard, various technologies using light irradiation for bonding and separation processes have been reported (for example, see Patent Documents 1 and 2), but with further progress in the semiconductor field in recent years, new technologies related to peeling achieved by light irradiation such as ultraviolet irradiation have been sought.

[0006] Under such circumstances, a laminate is provided, comprising: a semiconductor substrate; a support substrate that transmits ultraviolet light; and an adhesive layer and a release layer provided between the semiconductor substrate and the support substrate. The release layer of the laminate is formed using a film obtained from a release agent composition comprising a polymer of an ethylenically unsaturated monomer containing a tert-butyloxycarbonyl group, a photoacid generator, and a solvent (see, for example, Patent Document 3).

[0007] In addition, in the method of processing a substrate by temporarily bonding a support body, the substrate to be temporarily bonded includes, in addition to the semiconductor substrate for the purpose of thinning as described above, an electronic device layer including multiple semiconductor chip substrates and a sealing resin arranged between the semiconductor chip substrates.

[0008] Semiconductor packages (electronic components) including semiconductor elements (also called semiconductor chip substrates) have various forms depending on their sizes, such as WLP (Wafer Level Package) and PLP (Panel Level Package).

[0009] To achieve miniaturization of semiconductor packages, it is important to reduce the thickness of the substrates used in assembled components. However, reducing the thickness of the substrate reduces its strength, making it more susceptible to breakage during semiconductor package manufacturing. To address this issue, known techniques involve temporarily bonding the substrate to a support using an adhesive, then separating the substrate from the support after processing the substrate (see, for example, Patent Documents 4 and 5).

[0010] Prior art literature

[0011] Patent Literature

[0012] Patent Document 1: Japanese Patent Application Laid-Open No. 2004-64040

[0013] Patent Document 2: Japanese Patent Application Laid-Open No. 2012-106486

[0014] Patent Document 3: International Publication No. 2021-256386

[0015] Patent Document 4: Japanese Patent Application Laid-Open No. 2019-34541

[0016] Patent Document 5: Japanese Patent Application Laid-Open No. 2020-107649 Summary of the Invention

[0017] Problems to be solved by the invention

[0018] In the laminate described in Patent Document 3, in order to separate the semiconductor substrate and the support substrate, the separation layer must be irradiated with UV light and then subjected to a heating step.

[0019] However, if the peeling layer can be peeled off simply by irradiating it with UV light, peeling can be achieved even without a heating step after irradiation. This can reduce the number of steps and is ideal in terms of both efficiency and cost in manufacturing.

[0020] Therefore, it is desired to provide a laminate having a release agent layer that allows the semiconductor substrate and the support substrate to be peeled off even by light irradiation alone without heating after the light irradiation.

[0021] In order to further advance the conventional semiconductor field, there has been a constant demand for the development of new types of stripper compositions to be used.

[0022] The present invention has been completed in view of the above situation, and its purpose is to provide a stripping agent composition for forming the following stripping agent layer in the following laminate, wherein the laminate can firmly adhere a supporting substrate to the semiconductor substrate or the electronic device layer when the semiconductor substrate or the electronic device layer is processed, and after the substrate processing, the supporting substrate can be easily separated from the semiconductor substrate or the electronic device layer by light irradiation, the stripping agent layer is a stripping agent layer for the laminate that can be stripped by light irradiation, and the stripping agent composition can easily strip the semiconductor substrate or the electronic device layer from the supporting substrate even if only by light irradiation without heating after light irradiation.

[0023] Solutions for solving problems

[0024] The present inventors have conducted intensive studies to solve the above-mentioned technical problems, and as a result, have found that the above-mentioned technical problems can be solved, thereby completing the present invention having the following gist.

[0025] That is, the present invention includes the following contents.

[0026] [1] A stripping agent composition for light irradiation stripping, which is used to form the following stripping agent layer of the following laminate, the laminate comprising: a semiconductor substrate or an electronic device layer, a light-transmitting supporting substrate, and an adhesive layer and a stripping agent layer provided between the semiconductor substrate or the electronic device layer and the supporting substrate, the electronic device layer including a plurality of semiconductor chip substrates and a sealing resin arranged between the semiconductor chip substrates, and the laminate is used to: strip the semiconductor substrate or the electronic device layer from the supporting substrate after the stripping agent layer absorbs light irradiated from the supporting substrate side, the stripping agent composition being a composition as follows: (i) containing a polymer containing a photosensitive gas generating site, the photosensitive gas generating site undergoing a chemical reaction upon receiving the light to generate gas; or (ii) containing a compound containing a photosensitive gas generating site and a polymer, the photosensitive gas generating site undergoing a chemical reaction upon receiving the light to generate gas.

[0027] [2] The stripper composition according to [1], wherein the photosensitive gas generating portion has a structure selected from the group consisting of a nitrobenzene-based structure, an oxime ester-based structure, an azide-based structure, a diazonium-based structure, a ketoprofen-based structure, a diazonaphthoquinone-based structure, an azo-based structure, an azodicarbonyl-based structure, a sulfonylhydrazide-based structure, a hydrazine-based structure, a benzoincarbamate-based structure, a 1,2,3-thiazole-based structure, and a diazomethanesulfonic acid-based structure.

[0028] [3] The remover composition according to [1] or [2], wherein the polymer containing the photosensitive gas generating site is a polymer having a repeating unit represented by the following formula (1).

[0029]

[0030] (In formula (1), A represents a trivalent hydrocarbon group, L represents a linking group, and X represents a photosensitive gas generating site.)

[0031] [4] The stripping agent composition according to [3], wherein the formula (1) is a repeating unit represented by any of the following formulas (2-1) to (2-3), and the linking group of L is at least any of a single bond, -CO-, -COO-, an alkyl group optionally having a substituent, and -NH-.

[0032]

[0033] (In formulas (2-1) and (2-3), R represents a hydrogen bond or a methyl group. X represents a photosensitive gas generating site. n represents an integer of 0 or 1.)

[0034] [5] The stripping agent composition according to [3] or [4], wherein in the formula (1), the photosensitive gas generating site of X is represented by any of the following formulas (3-1) to (3-8).

[0035]

[0036] (In formulas (3-1) to (3-8), * represents a bonding bond.)

[0037] [6] The stripping agent composition according to [1], wherein the compound containing a photosensitive gas generating site is a compound represented by any of the following formulas (4-1) to (4-4).

[0038]

[0039] [7] A laminate comprising: a semiconductor substrate or an electronic device layer, a light-transmitting support substrate, and an adhesive layer and a release agent layer provided between the semiconductor substrate or the electronic device layer and the support substrate, wherein the electronic device layer includes a plurality of semiconductor chip substrates and a sealing resin arranged between the semiconductor chip substrates, and the laminate is used for: peeling the semiconductor substrate or the electronic device layer from the support substrate after the release agent layer absorbs light irradiated from the support substrate side, wherein the release agent layer is formed from the release agent composition described in any one of [1] to [6].

[0040] [8] A method for manufacturing a processed semiconductor substrate or electronic device layer, comprising: step 5A of processing the semiconductor substrate of the stacked body as described in [7]; or step 5B of processing the electronic device layer of the stacked body as described in [7]; and step 6A of separating the semiconductor substrate processed by step 5A from the supporting substrate; or step 6B of separating the electronic device layer processed by step 5B from the supporting substrate.

[0041] [9] The method for manufacturing a processed semiconductor substrate or electronic device layer according to [8], wherein the step 6A or the step 6B includes a step of irradiating the stacked body with UV light from the supporting substrate side.

[0042] Effects of the Invention

[0043] According to the present invention, a stripping agent composition can be provided, which is used to form the following stripping agent layer in the following laminate, wherein the laminate can firmly bond a supporting substrate to the semiconductor substrate or the electronic device layer when the semiconductor substrate or the electronic device layer is processed, and after the substrate is processed, the supporting substrate can be easily separated from the semiconductor substrate or the electronic device layer by light irradiation. The stripping agent layer is a stripping agent layer for the laminate that can be stripped by light irradiation, and the stripping agent composition can easily strip the semiconductor substrate or the electronic device layer from the supporting substrate even by light irradiation alone without heating after light irradiation. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 This is a schematic cross-sectional view of an example of the laminated body in the first embodiment.

[0045] Figure 2 This is a schematic cross-sectional view of an example of a laminated body in the second embodiment.

[0046] Figure 3 This is a schematic cross-sectional view for explaining a method for producing a laminated body showing an example of the second embodiment.

[0047] Figure 4 This is a schematic cross-sectional view for explaining a method for producing a laminated body showing an example of the second embodiment.

[0048] Figure 5 This is a schematic cross-sectional view for explaining a method for producing a laminated body showing an example of the second embodiment.

[0049] Figure 6 This is a schematic cross-sectional view for explaining a method for producing a laminated body showing an example of the second embodiment.

[0050] Figure 7 This is a schematic cross-sectional view for explaining a method for processing a laminated body showing an example of the second embodiment.

[0051] Figure 8 This is a schematic cross-sectional view for explaining a method for processing a laminated body showing an example of the second embodiment.

[0052] Figure 9 This is a schematic cross-sectional view for explaining a method for separating a stacked body, showing an example of the second embodiment.

[0053] Figure 10 This is a schematic cross-sectional view for explaining a method for separating a stacked body, showing an example of the second embodiment.

[0054] Figure 11 This is a schematic cross-sectional view for explaining a method for cleaning a laminated body after separation, showing an example of the second embodiment. DETAILED DESCRIPTION

[0055] (Removal agent composition for light irradiation removal)

[0056] The remover composition of the present invention is a composition that can be removed by light irradiation.

[0057] The stripping agent composition of the present invention is a composition for easily stripping a semiconductor substrate or an electronic device layer from a supporting substrate.

[0058] The stripping agent composition of the present invention (i) contains a polymer containing a photosensitive gas generating site, wherein the photosensitive gas generating site undergoes a chemical reaction upon receiving light to generate gas; or (ii) contains a compound containing a photosensitive gas generating site and a polymer, wherein the photosensitive gas generating site undergoes a chemical reaction upon receiving light to generate gas.

[0059] The remover composition of the present invention may contain a solvent and other components in addition to the polymer containing the photosensitive gas generating site or the compound containing the photosensitive gas generating site and the polymer.

[0060] <Polymer or compound containing a photosensitive gas generating site>

[0061] The photosensitive gas generating site contained in the polymer or compound of the present invention is a site having a functional group that absorbs light of a specific wavelength such as ultraviolet light to cause a chemical reaction (photodecomposition) and generates gas as a result of the chemical reaction (photodecomposition).

[0062] The release agent layer of the present invention generates gas upon light irradiation, thereby making it possible to easily peel the semiconductor substrate or the electronic device layer from the support substrate.

[0063] The photosensitive gas generating portion that generates gas by photodecomposition has, for example, a structure selected from the group consisting of a nitrobenzene-based structure, an oxime ester-based structure, an azide-based structure, a diazonium-based structure, a ketoprofen-based structure, a diazonaphthoquinone-based structure, an azo-based structure, an azodicarbonyl-based structure, a sulfonylhydrazide-based structure, a hydrazine-based structure, a benzoin carbamate-based structure, a 1,2,3-thiazole-based structure, and a diazomethanesulfonic acid-based structure.

[0064] Examples of the gas generated by photolysis include carbon dioxide, nitric oxide, nitrogen, carbon monoxide, oxygen, and hydrogen.

[0065] As described above, the stripper composition of the present invention is any of the following compositions: (i) a composition containing a polymer including a photosensitive gas generating site; or (ii) a composition containing a compound including a photosensitive gas generating site and a polymer. Below, each of (i) and (ii) is described in more detail.

[0066] Preferred embodiments of the stripper composition of the present invention include: (Ia embodiment) a composition containing a polymer having a repeating unit represented by the following formula (1) and containing a photosensitive gas generating portion; or (Ib embodiment) a composition containing a compound containing a photosensitive gas generating portion and a polymer.

[0067]

[0068] (In formula (1), A represents a trivalent hydrocarbon group, L represents a linking group, and X represents a photosensitive gas generating site.)

[0069] Therefore, in the following section "<<IAth embodiment>>", the release agent composition of the present invention containing a polymer having a repeating unit represented by the above formula (1) and containing a photosensitive gas generating site will be described.

[0070] On the other hand, in the section of "<<IBth embodiment>> below, the release agent composition of the present invention containing a compound having a photosensitive gas generating site in a polymer will be described.

[0071] <<Implementation Plan No. IA>>

[0072] The repeating unit represented by the above formula (1) is preferably a repeating unit represented by any of the following formulae (2-1) to (2-3), for example.

[0073]

[0074] (In formulas (2-1) and (2-3), R represents a hydrogen bond or a methyl group. L represents a linking group. X represents a photosensitive gas generating site. n represents an integer of 0 or 1.)

[0075] In the above formula (1), the linking group of L is preferably at least any of a single bond, -CO-, -COO-, an alkyl group optionally having a substituent, and -NH-. These linking groups may be used in combination.

[0076] Here, examples of the substituent that may be substituted on the alkyl group include -OH and the like.

[0077] In the above formula (1), the photosensitive gas generation site of X is preferably a site represented by any of the following formulas (3-1) to (3-8), for example.

[0078]

[0079]

[0080] (In formulas (3-1) to (3-8), * represents a bonding bond.)

[0081] As the above-mentioned polymer having a repeating unit represented by formula (1) and containing a photosensitive gas generating portion, there is no particular limitation as long as it is a polymer containing a photosensitive gas generating portion that generates gas by photodecomposition, and it can be appropriately selected according to the purpose. For example, there can be listed: a polymer having a nitrobenzene-based structure represented by the following formula (5-1), a polymer having an oxime ester-based structure represented by the following formula (5-2), a polymer having an azide-based structure represented by the following formula (5-3), and a polymer having a diazonium-based structure represented by the following formula (5-4).

[0082]

[0083] <<Implementation Plan No. 1B>>

[0084] The remover composition of the IBth embodiment is a composition in which a compound having a photosensitive gas generating site is dispersed in a polymer.

[0085] As a compound having a photosensitive gas generating site dispersed in a polymer, there is no particular limitation as long as it is a compound containing a photosensitive gas generating site that generates gas by photodecomposition, and it can be appropriately selected according to the purpose. For example, there can be listed: a compound having a ketoprofen-based structure represented by the following formula (4-1) (2-(3-benzoylphenyl)propionic acid), a compound having a diazonaphthoquinone-based structure represented by the following formula (4-2), a compound having an azide-based structure represented by the following formula (4-3), and a compound having a diazonium-based structure represented by the following formula (4-4).

[0086]

[0087]

[0088] Since film formation cannot be achieved by simply dissolving the compound having the photosensitive gas generating portion in a solvent, the compound having the photosensitive gas generating portion is dispersed in a polymer to form a film. Therefore, the polymer used to disperse the compound having the photosensitive gas generating portion is not particularly limited as long as it is a polymer that helps to form a film. It can be appropriately selected according to the purpose. For example, resins that can be used as binder resins, such as poly(meth)acrylic resins, polyolefin resins, polystyrene resins, polyester resins, silicone resins, polyurethane resins, polycarbonate resins, novolac resins, condensed epoxy resins, and polyether resins, can be listed. Among them, from the perspective of firmly bonding the semiconductor substrate, the polymer is preferably a poly(meth)acrylic resin having a repeating unit represented by the following formula (I).

[0089] In addition, "(meth)acrylic acid" means methacrylic acid and / or acrylic acid.

[0090]

[0091] (In formula (I), R 1 Represents a hydrogen atom or a methyl group. 2 represents a hydrogen atom or a chain saturated hydrocarbon group having 1 to 5 carbon atoms.

[0092] Preferred embodiments of the poly(meth)acrylic acid resin having a repeating unit represented by the above formula (I) include polyacrylic acid having a repeating unit represented by the following formula (I-1) and polymethyl methacrylate having a repeating unit represented by the following formula (I-2).

[0093]

[0094]

[0095] <Other ingredients>

[0096] The remover composition of the present invention may further contain a solvent.

[0097] As the solvent, for example, an organic solvent can be used.

[0098] Specific examples of the organic solvent include aliphatic hydrocarbons, aromatic hydrocarbons, and ketones, but are not limited thereto.

[0099] More specifically, examples of the organic solvent include, but are not limited to, hexane, heptane, octane, nonane, decane, undecane, dodecane, isododecane, menthane, limonene, toluene, xylene, mesitylene, cumene, MIBK (methyl isobutyl ketone), butyl acetate, diisobutyl ketone, 2-octanone, 2-nonanone, and 5-nonanone.

[0100] Other examples include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, propylene glycol, propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether, propylene glycol monoethyl ether acetate, propylene glycol propyl ether acetate, toluene, xylene, methyl ethyl ketone, cyclopentanone, cyclohexanone, ethyl 2-hydroxypropionate, ethyl 2-hydroxy-2-methylpropionate, ethyl ethoxyacetate, ethyl hydroxyacetate, methyl 2-hydroxy-3-methylbutyrate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, ethyl 3-ethoxypropionate, methyl 3-ethoxypropionate, methyl pyruvate, ethyl pyruvate, ethyl acetate, butyl acetate, ethyl lactate, and butyl lactate.

[0101] The stripping agent composition of the present invention may further contain a photosensitizer.

[0102] Examples of the photosensitizer include acenaphthylene, 2,3-benzofluorene, 2,4,5,6-dibenzophenanthrene, 1,2-benzanthracene, perylene, picramine, 2,6-dichloro-4-nitroaniline, 5-nitroacenaphthene, 1-nitro-4-dimethylaminonaphthalene, 2-nitrofluorene, 2-ethylanthraquinone, 1,2-benzanthraquinone, 2,4-diethylthiazolone, benzanthrone, p,p-tetraethyldiaminobenzophenone, acridine yellow, acridine orange, eosin, erythrosine, rose Bengal, chlorophyll, and phthalocyanine, but are not limited thereto.

[0103] <<Preparation of Release Agent Composition>>

[0104] The remover composition of the present invention can be produced by appropriately mixing a solvent with the polymer containing the photosensitive gas generating site, or the compound containing the photosensitive gas generating site and the polymer, as needed.

[0105] In the case of the above-mentioned embodiment IA, in order to obtain the above-mentioned polymer containing the photosensitive gas generating site, for example, a polymer component for forming the A site (optionally containing the L site) in the above-mentioned formula (1) (or a monomer component for forming the polymer component) and a compound for forming the X site (photosensitive gas generating site) can be reacted in a mass ratio of 1:2 to 1:1.1.

[0106] In the case of the above-mentioned IA embodiment, the mixing ratio of the above-mentioned polymer containing a photosensitive gas generating portion and the above-mentioned solvent is not particularly limited as long as the effect of the present invention is achieved, and can be appropriately selected according to the purpose. For example, the mass ratio of the above-mentioned polymer containing a photosensitive gas generating portion: solvent is preferably 1:2 to 1:10, and more preferably 1:2 to 1:5.

[0107] In the case of the above-mentioned IB embodiment, in order to obtain a stripping agent composition, a compound containing a photosensitive gas generating site is mixed with a polymer. For example, the mixing ratio of the compound containing a photosensitive gas generating site and the polymer is preferably 1:0.2 to 1:0.5 in terms of mass ratio.

[0108] In the case of the above-mentioned IB embodiment, the mixing ratio of the compound containing the photosensitive gas generating portion and the polymer to the solvent is not particularly limited as long as the effect of the present invention is achieved, and can be appropriately selected according to the purpose. For example, the mass ratio of the compound containing the photosensitive gas generating portion and the polymer to the solvent is preferably 1:2 to 1:10, and more preferably 1:2 to 1:5.

[0109] (Laminated body)

[0110] The laminate of the present invention comprises a semiconductor substrate or an electronic device layer, a supporting substrate, a release agent layer for release by light irradiation, and an adhesive layer.

[0111] The supporting substrate has light-transmitting properties.

[0112] The release agent layer for light irradiation release is provided between the semiconductor substrate or the electronic device layer and the support substrate.

[0113] The adhesive layer is provided between the semiconductor substrate or the electronic device layer and the support substrate.

[0114] The laminate is used to separate the semiconductor substrate or the electronic device layer from the support substrate after the release agent layer absorbs light irradiated from the support substrate side.

[0115] The release agent layer for light irradiation removal is a layer formed of the above-mentioned release agent composition for light irradiation removal of the present invention.

[0116] The laminate of the present invention is used for temporary bonding for processing a semiconductor substrate or an electronic device layer, and can be suitably used for processing such as thinning of a semiconductor substrate or an electronic device layer.

[0117] During thinning or other processing of the semiconductor substrate, the semiconductor substrate is supported by the support substrate via the adhesive layer. On the other hand, after the semiconductor substrate is processed, the stripper layer is irradiated with light, and then the support substrate is separated from the semiconductor substrate. Due to the polymer or compound containing a specific photosensitive gas generating site contained in the stripper composition, the specific photosensitive gas generating site in the stripper layer formed by the stripper composition absorbs light (e.g., UV light), causing a chemical reaction to generate gas. As a result, after irradiating the stripper layer with light, the semiconductor substrate and the support substrate become easily separated.

[0118] Furthermore, while the electronic device layer is being thinned, the electronic device layer is supported by the support substrate via the adhesive layer. After the electronic device layer is processed, the release agent layer is irradiated with light, and then the support substrate and the semiconductor substrate are separated.

[0119] The release agent layer of the present invention facilitates separation of the semiconductor substrate or electronic device layer from the support substrate after irradiation with light. Furthermore, after separation of the semiconductor substrate or electronic device layer from the support substrate, residues of the release agent layer or adhesive layer remaining on the semiconductor substrate, electronic device layer, or support substrate can be removed using, for example, a cleaning composition used for cleaning semiconductor substrates.

[0120] The wavelength of the light used for stripping is preferably 250 to 600 nm, more preferably 250 to 370 nm. More suitable wavelengths are 254 nm, 308 nm, 343 nm, 355 nm, 365 nm, or 532 nm, with 254 nm or 365 nm being particularly preferred. The amount of light required for stripping is an amount sufficient to cause appropriate degradation, such as decomposition, of the specific light-absorbing compound.

[0121] The light irradiation of the release agent layer does not necessarily need to be performed on the entire area of the release agent layer. Even if there are mixed areas of irradiated and unirradiated areas, as long as the release ability of the release agent layer as a whole is sufficiently improved, the semiconductor substrate and the support substrate can be separated by a slight external force, such as pulling up the support substrate.

[0122] The light used for the peeling may be laser light or non-laser light emitted from a light source such as an ultraviolet lamp. In the present invention, non-laser light emitted from a light source such as an ultraviolet lamp is preferably used.

[0123] When non-laser technology is used, not only can damage to semiconductor substrates such as silicon wafers, which can occur during stripping using high-energy lasers, be avoided, but the light irradiation time per stack can also be shortened compared to laser technology, resulting in expected improvements in throughput. Furthermore, compared to laser technology, non-laser technology does not produce polymer decomposition products such as carbides, making post-stripping cleaning easier.

[0124] The following describes each of the cases where the laminate includes a semiconductor substrate and the case where the laminate includes an electronic device layer in detail.

[0125] In the following <First Embodiment>, a case where the laminate includes a semiconductor substrate will be described, and in the following <Second Embodiment>, a case where the laminate includes an electronic device layer will be described.

[0126] <First Implementation Plan>

[0127] A laminated body including a semiconductor substrate is used for processing the semiconductor substrate. During processing, the semiconductor substrate is adhered to a support substrate via an adhesive layer. After processing, the release agent layer is irradiated with light, and the semiconductor substrate is then separated from the support substrate.

[0128] <<Semiconductor substrate>>

[0129] The main material constituting the entire semiconductor substrate is not particularly limited as long as it can be used for such applications, and examples thereof include silicon, silicon carbide, and compound semiconductors.

[0130] The shape of the semiconductor substrate is not particularly limited, and may be, for example, a disc-shaped semiconductor substrate. It should be noted that the disc-shaped semiconductor substrate does not need to have a completely circular surface. For example, the outer periphery of the semiconductor substrate may have a straight portion called an orientation flat or a notch called a groove.

[0131] The thickness of the disk-shaped semiconductor substrate is not particularly limited and may be appropriately determined depending on the intended use of the semiconductor substrate. For example, it is 500 to 1000 μm.

[0132] The diameter of the disk-shaped semiconductor substrate is not particularly limited and may be appropriately determined depending on the intended use of the semiconductor substrate. For example, it is 100 to 1000 mm.

[0133] The semiconductor substrate may also have bumps. A bump is a protruding terminal.

[0134] In the laminated body, when the semiconductor substrate has the bump, the semiconductor substrate has the bump on the support substrate side.

[0135] In a semiconductor substrate, bumps are usually formed on the surface where the circuit is formed. The circuit can be single-layer or multi-layer. There are no particular restrictions on the shape of the circuit.

[0136] In the semiconductor substrate, the surface (back surface) opposite to the surface having the bumps is a surface to be processed.

[0137] The material, size, shape, structure, and density of the bumps on the semiconductor substrate are not particularly limited.

[0138] Examples of the bumps include ball bumps, printed bumps, stud bumps, and plated bumps.

[0139] Generally, the bump height, radius, and pitch are appropriately determined based on the following conditions: a bump height of approximately 1 to 200 μm, a bump radius of 1 to 200 μm, and a bump pitch of 1 to 500 μm.

[0140] Examples of materials for the bumps include low-melting-point solder, high-melting-point solder, tin, indium, gold, silver, and copper. The bumps may be composed of a single component or multiple components. More specifically, examples include SnAg bumps, SnBi bumps, Sn bumps, AuSn bumps, and other Sn-based alloy plating.

[0141] Furthermore, the bump may have a stacked structure including a metal layer composed of at least any one of these components.

[0142] An example of a semiconductor substrate is a silicon wafer having a diameter of 300 mm and a thickness of approximately 770 μm.

[0143] <<Support substrate>>

[0144] The supporting substrate is not particularly limited as long as it is a member that is translucent to light irradiating the adhesive layer and can support the semiconductor substrate when the semiconductor substrate is processed. Examples thereof include glass supporting substrates.

[0145] The shape of the support substrate is not particularly limited, and an example thereof may be a disk shape.

[0146] The thickness of the disk-shaped support substrate is not particularly limited and may be appropriately determined according to the size of the semiconductor substrate, etc., but is, for example, 500 to 1000 μm.

[0147] The diameter of the disk-shaped support substrate is not particularly limited and may be appropriately determined according to the size of the semiconductor substrate, etc., but is, for example, 100 to 1000 mm.

[0148] An example of the supporting substrate is a glass wafer having a diameter of 300 mm and a thickness of about 700 μm.

[0149] <<Release agent layer>>

[0150] The release agent layer is a layer formed of a release agent composition.

[0151] The release agent layer is provided between the semiconductor substrate and the support substrate.

[0152] The release agent layer may be in contact with the support substrate or may be in contact with the semiconductor substrate.

[0153] The release agent layer is formed using the above-mentioned release agent composition for light irradiation release of the present invention.

[0154] The release agent composition of the present invention can be suitably used to form a release agent layer in a laminate comprising a semiconductor substrate, a support substrate, and a release agent layer disposed between the semiconductor substrate and the support substrate. The laminate is used to release the semiconductor substrate from the support substrate after the release agent layer absorbs light irradiated from the support substrate side.

[0155] One of the characteristics of the release agent layer obtained from the release agent composition of the present invention is that the semiconductor substrate and the supporting substrate can be easily peeled off after light irradiation.

[0156] When forming a release agent layer from the release agent composition, the compound having a specific photosensitive gas generating site may crosslink itself or react with other components to form a crosslinked structure, or may maintain its structure without crosslinking or reacting, as long as the effects of the present invention are achieved.

[0157] In other words, in the release agent layer, the compound having a specific photosensitive gas generating site may form a crosslinked structure by crosslinking itself or reacting with other components, or may exist while maintaining its structure.

[0158] The thickness of the release agent layer is not particularly limited and is generally 0.01 to 20 μm. From the viewpoint of maintaining film strength, it is preferably 0.05 μm or more, more preferably 0.1 μm or more, and even more preferably 0.2 μm or more. From the viewpoint of avoiding unevenness caused by a thick film, it is preferably 15 μm or less, more preferably 10 μm or less, even more preferably 8 μm or less, and even more preferably 5 μm or less.

[0159] The method of forming the release agent layer from the release agent composition will be described in detail in the description of "Method for producing an example of a laminated body in the first embodiment" described below.

[0160] <<Adhesive layer>>

[0161] The adhesive layer is provided between the support substrate and the semiconductor substrate.

[0162] The adhesive layer is in contact with, for example, a semiconductor substrate. The adhesive layer may also be in contact with, for example, a supporting substrate.

[0163] The adhesive layer is not particularly limited, but is preferably a layer formed of an adhesive composition.

[0164] <<Adhesive composition>>

[0165] Examples of the adhesive composition include, but are not limited to, silicone adhesives, acrylic resin adhesives, epoxy resin adhesives, polyamide adhesives, polystyrene adhesives, polyimide adhesives, and phenolic resin adhesives.

[0166] Among them, silicone adhesives are preferred as adhesive compositions because they exhibit suitable adhesion during processing of semiconductor substrates, can be appropriately peeled off after processing, have excellent heat resistance, and can be appropriately removed with a cleaning composition.

[0167] In a preferred embodiment, the adhesive composition contains polyorganosiloxane.

[0168] Furthermore, in another preferred embodiment, the adhesive composition contains a component that cures by a hydrosilylation reaction.

[0169] For example, the adhesive composition used in the present invention contains a curing component (A) that becomes an adhesive component. The adhesive composition used in the present invention may also contain a curing component (A) that becomes an adhesive component and a component (B) that does not cause a curing reaction. Here, as the component (B) that does not cause a curing reaction, for example, polyorganosiloxane can be cited. It should be noted that in the present invention, "does not cause a curing reaction" does not mean that no curing reaction occurs, but refers to a curing reaction that does not occur with the curing component (A).

[0170] In a preferred embodiment, the component (A) may be a component that is cured by a hydrosilylation reaction, or may be a polyorganosiloxane component (A') that is cured by a hydrosilylation reaction.

[0171] In another preferred embodiment, component (A), for example, component (A'), comprises: a polyorganosiloxane (a1) having an alkenyl group having 2 to 40 carbon atoms bonded to a silicon atom; a polyorganosiloxane (a2) having a Si—H group; and a platinum group metal catalyst (A2). The alkenyl group having 2 to 40 carbon atoms may be optionally substituted. Examples of substituents include halogen atoms, nitro groups, cyano groups, amino groups, hydroxyl groups, carboxyl groups, aryl groups, and heteroaryl groups.

[0172] In another preferred embodiment, the polyorganosiloxane component (A') that is cured by a hydrosilylation reaction comprises a polysiloxane (A1) and a platinum group metal catalyst (A2), wherein the polysiloxane (A1) comprises a siloxane unit (Q unit) selected from the group consisting of SiO2, R 1 R 2 R 3 SiO 1 / 2 The siloxane unit (M unit), R 4 R 5 SiO 2 / 2 The siloxane units (D units) and R 6 SiO 3 / 2 The polysiloxane (A1) comprises a polyorganosiloxane (a1') and a polyorganosiloxane (a2'), wherein the polyorganosiloxane (a1') comprises a siloxane unit (Q' unit) represented by SiO2, a polyorganosiloxane unit (Q' unit), ... 1 'R 2 'R 3 'SiO 1 / 2 The siloxane units (M' units), R 4 'R 5 'SiO 2 / 2 The siloxane units (D' units) and R 6 'SiO 3 / 2The polyorganosiloxane (a2') comprises one or more units selected from the group consisting of siloxane units (T' units) represented by SiO2, and at least one unit selected from the group consisting of M' units, D' units and T' units, wherein the polyorganosiloxane (a2') comprises a siloxane unit (Q' unit) represented by SiO2, R 1 ”R 2 ”R 3 "SiO 1 / 2 The siloxane units (M" units), R 4 ”R 5 "SiO 2 / 2 The siloxane units (D" units) and R 6 "SiO 3 / 2 The siloxane units (T" units) shown in the embodiment of the present invention are one or more units selected from the group consisting of the siloxane units (T" units), and contain at least one selected from the group consisting of M" units, D" units and T" units.

[0173] It should be noted that (a1′) is an example of (a1), and (a2′) is an example of (a2).

[0174] R 1 ~R 6 is a group or atom bonded to a silicon atom, each independently representing an optionally substituted alkyl group, an optionally substituted alkenyl group, or a hydrogen atom. Examples of substituents include halogen atoms, nitro groups, cyano groups, amino groups, hydroxyl groups, carboxyl groups, aryl groups, and heteroaryl groups.

[0175] R 1 '~R 6 ' is a group bonded to a silicon atom, each independently representing an optionally substituted alkyl group or an optionally substituted alkenyl group, R 1 '~R 6 At least one of ' is an optionally substituted alkenyl group. Examples of the substituent include a halogen atom, a nitro group, a cyano group, an amino group, a hydroxyl group, a carboxyl group, an aryl group, and a heteroaryl group.

[0176] R 1 ”~R 6 " is a group or atom bonded to a silicon atom, each independently representing an optionally substituted alkyl group, or a hydrogen atom, R 1 ”~R 6 " is a hydrogen atom. Examples of the substituent include a halogen atom, a nitro group, a cyano group, an amino group, a hydroxyl group, a carboxyl group, an aryl group, and a heteroaryl group.

[0177] The alkyl group may be linear, branched, or cyclic, preferably linear or branched. The number of carbon atoms is not particularly limited, but is usually 1 to 40, preferably 30 or less, more preferably 20 or less, and even more preferably 10 or less.

[0178] Specific examples of the optionally substituted linear or branched alkyl group include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, 1-methyl-n-butyl, 2-methyl-n-butyl, 3-methyl-n-butyl, 1,1-dimethyl-n-propyl, 1,2-dimethyl-n-propyl, 2,2-dimethyl-n-propyl, 1-ethyl-n-propyl, n-hexyl, 1-methyl-n-pentyl, 2-methyl-n-pentyl, 3-methyl-n-pentyl, 4-methyl-n-pentyl, 1,1 The present invention also includes, but is not limited to, 1-dimethyl-n-butyl, 1,2-dimethyl-n-butyl, 1,3-dimethyl-n-butyl, 2,2-dimethyl-n-butyl, 2,3-dimethyl-n-butyl, 3,3-dimethyl-n-butyl, 1-ethyl-n-butyl, 2-ethyl-n-butyl, 1,1,2-trimethyl-n-propyl, 1,2,2-trimethyl-n-propyl, 1-ethyl-1-methyl-n-propyl, and 1-ethyl-2-methyl-n-propyl. The number of carbon atoms in the present invention is usually 1 to 14, preferably 1 to 10, and more preferably 1 to 6. Among them, methyl is particularly preferred.

[0179] Specific examples of the optionally substituted cyclic alkyl group include cyclopropyl, cyclobutyl, 1-methyl-cyclopropyl, 2-methyl-cyclopropyl, cyclopentyl, 1-methyl-cyclobutyl, 2-methyl-cyclobutyl, 3-methyl-cyclobutyl, 1,2-dimethyl-cyclopropyl, 2,3-dimethyl-cyclopropyl, 1-ethyl-cyclopropyl, 2-ethyl-cyclopropyl, cyclohexyl, 1-methyl-cyclopentyl, 2-methyl-cyclopentyl, 3-methyl-cyclopentyl, 1-ethyl-cyclobutyl, 2-ethyl-cyclobutyl, 3-ethyl-cyclobutyl, 1,2-dimethyl-cyclobutyl, 1,3-dimethyl-cyclobutyl, 2,2-dimethyl-cyclobutyl, 2,3-dimethyl-cyclobutyl, 2,4-dimethyl The cycloalkyl groups include, but are not limited to, cyclobutyl, 3,3-dimethyl-cyclobutyl, 1-n-propyl-cyclopropyl, 2-n-propyl-cyclopropyl, 1-isopropyl-cyclopropyl, 2-isopropyl-cyclopropyl, 1,2,2-trimethyl-cyclopropyl, 1,2,3-trimethyl-cyclopropyl, 2,2,3-trimethyl-cyclopropyl, 1-ethyl-2-methyl-cyclopropyl, 2-ethyl-1-methyl-cyclopropyl, 2-ethyl-2-methyl-cyclopropyl, and 2-ethyl-3-methyl-cyclopropyl; and bicycloalkyl groups such as dicyclobutyl, dicyclopentyl, dicyclohexyl, dicycloheptyl, dicyclooctyl, bicyclononyl, and dicyclodecyl. The number of carbon atoms in the cycloalkyl groups is usually 3 to 14, preferably 4 to 10, and more preferably 5 to 6.

[0180] The alkenyl group may be linear or branched, and the number of carbon atoms is not particularly limited, but is usually 2 to 40, preferably 30 or less, more preferably 20 or less, and further preferably 10 or less.

[0181] Specific examples of optionally substituted linear or branched alkenyl groups include, but are not limited to, vinyl, allyl, butenyl, and pentenyl. The number of carbon atoms in the alkenyl group is generally 2 to 14, preferably 2 to 10, and more preferably 1 to 6. Among them, vinyl and 2-propenyl are particularly preferred.

[0182] Specific examples of the optionally substituted cyclic alkenyl group include, but are not limited to, cyclopentenyl and cyclohexenyl. The number of carbon atoms in the cyclic alkenyl group is usually 4 to 14, preferably 5 to 10, and more preferably 5 to 6.

[0183] As described above, polysiloxane (A1) comprises polyorganosiloxane (a1') and polyorganosiloxane (a2'). The alkenyl groups contained in polyorganosiloxane (a1') and the hydrogen atoms (Si—H groups) contained in polyorganosiloxane (a2') form a crosslinked structure through a hydrosilylation reaction using a platinum group metal catalyst (A2), thereby curing. As a result, a cured film is formed.

[0184] The polyorganosiloxane (a1') comprises one or more units selected from the group consisting of Q' units, M' units, D' units, and T' units, and also comprises at least one unit selected from the group consisting of M' units, D' units, and T' units. As the polyorganosiloxane (a1'), two or more polyorganosiloxanes that satisfy these conditions may be used in combination.

[0185] Preferred combinations of two or more selected from the group consisting of Q' units, M' units, D' units, and T' units include, but are not limited to: (Q' unit and M' unit), (D' unit and M' unit), (T' unit and M' unit), and (Q' unit, T' unit, and M' unit).

[0186] When the polyorganosiloxane (a1′) comprises two or more polyorganosiloxanes, the combination of (Q′ unit and M′ unit) and (D′ unit and M′ unit), the combination of (T′ unit and M′ unit) and (D′ unit and M′ unit), and the combination of (Q′ unit, T′ unit, and M′ unit) and (T′ unit and M′ unit) are preferred, but the present invention is not limited thereto.

[0187] The polyorganosiloxane (a2') contains one or more units selected from the group consisting of Q" units, M" units, D" units, and T" units, and contains at least one unit selected from the group consisting of M" units, D" units, and T" units. As the polyorganosiloxane (a2'), two or more polyorganosiloxanes that satisfy these conditions may be used in combination.

[0188] Preferred combinations of two or more selected from the group consisting of Q" units, M" units, D" units, and T" units include, but are not limited to: (M" units and D" units), (Q" units and M" units), and (Q" units, T" units, and M" units).

[0189] The polyorganosiloxane (a1′) is composed of siloxane units formed by bonding silicon atoms with alkyl and / or alkenyl groups. 1 '~R 6 The ratio of alkenyl groups in all substituents represented by ' is preferably 0.1 to 50.0 mol%, more preferably 0.5 to 30.0 mol%, and the remaining R 1 '~R 6 ' can be set to an alkyl group.

[0190] The polyorganosiloxane (a2') is composed of siloxane units formed by bonding silicon atoms with alkyl groups and / or hydrogen atoms. 1 ”~R 6 The ratio of all substituents and hydrogen atoms in the substituent atoms represented by " is preferably 0.1 to 50.0 mol%, more preferably 10.0 to 40.0 mol%, and the remaining R 1 ”~R 6 " can be set to an alkyl group.

[0191] When component (A) contains (a1) and (a2), in a preferred embodiment of the present invention, the molar ratio of alkenyl groups contained in polyorganosiloxane (a1) to hydrogen atoms constituting Si—H bonds contained in polyorganosiloxane (a2) is within a range of 1.0:0.5 to 1.0:0.66.

[0192] The weight average molecular weight of polysiloxanes such as polyorganosiloxane (a1) and polyorganosiloxane (a2) is not particularly limited, but is generally 500 to 1,000,000, and preferably 5,000 to 50,000 from the viewpoint of achieving the effects of the present invention with good reproducibility.

[0193] It should be noted that in the present invention, the weight-average molecular weight, number-average molecular weight and dispersity of polyorganosiloxane (excluding the above-mentioned organosiloxane polymers) can be measured, for example, using a GPC apparatus (EcoSEC, HLC-8320GPC manufactured by TOSOH Corporation) and a GPC column (TSKgel SuperMultiporeHZ-N, TSKgel SuperMultiporeHZ-H manufactured by TOSOH Corporation), with the column temperature set to 40°C, tetrahydrofuran used as an eluent (elution solvent), the flow rate (flow velocity) set to 0.35 mL / min, and polystyrene (Shodex manufactured by Showa Denko K.K.) used as a standard sample.

[0194] The viscosity of polyorganosiloxane (a1) and polyorganosiloxane (a2) is not particularly limited, but is generally 10 to 1,000,000 (mPa·s) each. From the perspective of achieving the effects of the present invention with good reproducibility, it is preferably 50 to 10,000 (mPa·s). The viscosities of polyorganosiloxane (a1) and polyorganosiloxane (a2) are values measured at 25°C using an E-type rotational viscometer.

[0195] The polyorganosiloxane (a1) and the polyorganosiloxane (a2) react with each other through a hydrosilylation reaction to form a film. Therefore, the curing mechanism differs from, for example, a mechanism via silanol groups. Therefore, neither siloxane needs to contain a silanol group or a functional group such as an alkoxy group that forms a silanol group upon hydrolysis.

[0196] In a preferred embodiment of the present invention, the adhesive composition contains the polyorganosiloxane component (A') and a platinum group metal catalyst (A2).

[0197] Such a platinum-based metal catalyst is a catalyst for promoting the hydrosilylation reaction between the alkenyl group of the polyorganosiloxane (a1) and the Si—H group of the polyorganosiloxane (a2).

[0198] Specific examples of platinum-based metal catalysts include, but are not limited to, platinum black, platinum tetrachloride, chloroplatinic acid, reaction products of chloroplatinic acid and monohydric alcohols, complexes of chloroplatinic acid and olefins, and bisacetoacetic platinum.

[0199] Examples of the complex of platinum and olefins include, but are not limited to, a complex of divinyltetramethyldisiloxane and platinum.

[0200] The amount of the platinum group metal catalyst (A2) is not particularly limited, but is usually within a range of 1.0 to 50.0 ppm based on the total amount of the polyorganosiloxane (a1) and the polyorganosiloxane (a2).

[0201] The polyorganosiloxane component (A') may contain a polymerization inhibitor (A3) for the purpose of suppressing the progress of the hydrosilylation reaction.

[0202] The polymerization inhibitor is not particularly limited as long as it can inhibit the progress of the hydrosilylation reaction. Specific examples thereof include alkynyl alcohols such as 1-ethynyl-1-cyclohexanol and 1,1-diphenyl-2-propyn-1-ol.

[0203] The amount of the polymerization inhibitor is not particularly limited, but is usually 1000.0 ppm or more relative to the total amount of polyorganosiloxane (a1) and polyorganosiloxane (a2) to achieve the desired effect, and 10000.0 ppm or less to prevent excessive inhibition of the hydrosilylation reaction.

[0204] An example of the adhesive composition used in the present invention may also include a curing component (A) and a component (B) that does not cause a curing reaction and serves as a release agent. By including such a component (B) in the adhesive composition, the resulting adhesive layer can be appropriately and reproducibly released.

[0205] Typical examples of such component (B) include non-curable polyorganosiloxanes. Specific examples thereof include epoxy-containing polyorganosiloxanes, methyl-containing polyorganosiloxanes, and phenyl-containing polyorganosiloxanes, but the present invention is not limited thereto.

[0206] In addition, component (B) includes polydimethylsiloxane. The polydimethylsiloxane may be optionally modified. Examples of the optionally modified polydimethylsiloxane include, but are not limited to, epoxy-containing polydimethylsiloxane, unmodified polydimethylsiloxane, and phenyl-containing polydimethylsiloxane.

[0207] Preferred examples of the polyorganosiloxane as the component (B) include epoxy-containing polyorganosiloxane, methyl-containing polyorganosiloxane, and phenyl-containing polyorganosiloxane, but are not limited thereto.

[0208] The weight-average molecular weight of the polyorganosiloxane as component (B) is not particularly limited, but is typically 100,000 to 2,000,000. From the perspective of achieving the effects of the present invention with good reproducibility, it is preferably 200,000 to 1,200,000, and more preferably 300,000 to 900,000. Furthermore, its dispersity is not particularly limited, but is typically 1.0 to 10.0. From the perspective of achieving appropriate peeling with good reproducibility, it is preferably 1.5 to 5.0, and more preferably 2.0 to 3.0. It should be noted that the weight-average molecular weight and dispersity can be measured by the methods described above for polyorganosiloxanes.

[0209] The viscosity of the polyorganosiloxane as component (B) is not particularly limited, but is usually 1,000 to 2,000,000 mm 2 / s. It should be noted that the viscosity of the polyorganosiloxane as component (B) is represented by kinematic viscosity, which is centistokes (cSt) = mm 2 / s. It can also be calculated by dividing the viscosity (mPa·s) by the density (g / cm 3 That is, its value can be obtained from the viscosity and density measured at 25°C using an E-type rotational viscometer, or from the kinematic viscosity (mm 2 / s) = viscosity (mPa·s) / density (g / cm 3 ) is calculated using this formula.

[0210] Examples of epoxy group-containing polyorganosiloxanes include those containing R 11 R 12 SiO 2 / 2 The siloxane units (D 10 units) of polyorganosiloxane.

[0211] R 11 is a group bonded to a silicon atom, representing an alkyl group, R 12 It is a group bonded to a silicon atom and represents an epoxy group or an organic group containing an epoxy group. Specific examples of the alkyl group include those described above.

[0212] The epoxy group in the organic group containing an epoxy group may be an independent epoxy group that is not condensed with other rings, or may be an epoxy group that forms a condensed ring with other rings, such as a 1,2-epoxycyclohexyl group.

[0213] Specific examples of the organic group containing an epoxy group include a 3-glycidoxypropyl group and a 2-(3,4-epoxycyclohexyl)ethyl group, but are not limited thereto.

[0214] In the present invention, a preferred example of the epoxy-containing polyorganosiloxane is epoxy-containing polydimethylsiloxane, but the present invention is not limited thereto.

[0215] The epoxy-containing polyorganosiloxane comprises the above-mentioned siloxane units (D 10 Unit), but except for D 10 In addition to the Q unit, the Q unit, the M unit and / or the T unit may be contained.

[0216] In a preferred embodiment of the present invention, specific examples of epoxy-containing polyorganosiloxanes include: 10 Polyorganosiloxane composed of units; containing D 10 Unit and Q unit polyorganosiloxane; containing D10 Unit and M unit polyorganosiloxane; containing D 10 Units and T units of polyorganosiloxane; containing D 10 Unit, Q unit and M unit polyorganosiloxane; containing D 10 Unit, M unit and T unit polyorganosiloxane; containing D 10 unit, Q unit, M unit and T unit polyorganosiloxane, etc.

[0217] The epoxy-containing polyorganosiloxane is preferably an epoxy-containing polydimethylsiloxane having an epoxy value of 0.1 to 5. The weight average molecular weight thereof is not particularly limited but is usually 1,500 to 500,000, and is preferably 100,000 or less from the viewpoint of suppressing precipitation in the composition.

[0218] Specific examples of the epoxy-containing polyorganosiloxane include polyorganosiloxanes represented by formulae (E1) to (E3), but are not limited thereto.

[0219]

[0220] (m1 and n1 represent the number of repeating units and are positive integers.)

[0221]

[0222] (m2 and n2 represent the number of repeating units and are positive integers, and R is an alkylene group having 1 to 10 carbon atoms.)

[0223]

[0224] (m3, n3, and o3 represent the number of repeating units and are positive integers, and R is an alkylene group having 1 to 10 carbon atoms.)

[0225] Examples of the methyl group-containing polyorganosiloxane include: 210 R 220 SiO 2 / 2 The siloxane units (D 200 Units), preferably comprising R 21 R 21 SiO 2 / 2 The siloxane units (D 20 units) of polyorganosiloxane.

[0226] R 210 and R 220 is a group bonded to a silicon atom, each independently represents an alkyl group, at least one of which is a methyl group, and specific examples of the alkyl group include those described above.

[0227] R 21 is a group bonded to a silicon atom, and represents an alkyl group. Specific examples of the alkyl group include the above examples. 21 , preferably methyl.

[0228] In the present invention, polydimethylsiloxane can be cited as a preferred example of the methyl group-containing polyorganosiloxane, but the present invention is not limited thereto.

[0229] The methyl-containing polyorganosiloxane comprises the above-mentioned siloxane units (D 200 Unit or D 20 Unit), but except for D 200 Unit and D 20 In addition to the Q unit, the Q unit, the M unit and / or the T unit may be contained.

[0230] In one embodiment of the present invention, specific examples of methyl-containing polyorganosiloxanes include: 200 Polyorganosiloxane composed of units; containing D 200 Unit and Q unit polyorganosiloxane; containing D 200 Unit and M unit polyorganosiloxane; containing D 200 Units and T units of polyorganosiloxane; containing D 200 Unit, Q unit and M unit polyorganosiloxane; containing D 200 Unit, M unit and T unit polyorganosiloxane; containing D 200 unit, Q unit, M unit and T unit of the polyorganosiloxane.

[0231] In a preferred embodiment of the present invention, specific examples of methyl-containing polyorganosiloxanes include: 20 Polyorganosiloxane composed of units; containing D 20 Unit and Q unit polyorganosiloxane; containing D 20 Unit and M unit polyorganosiloxane; containing D 20 Units and T units of polyorganosiloxane; containing D 20 Unit, Q unit and M unit polyorganosiloxane; containing D 20 Unit, M unit and T unit polyorganosiloxane; containing D 20 unit, Q unit, M unit and T unit of the polyorganosiloxane.

[0232] Specific examples of the methyl group-containing polyorganosiloxane include polyorganosiloxane represented by formula (M1), but the present invention is not limited thereto.

[0233]

[0234] (n4 represents the number of repeating units, which is a positive integer.)

[0235] Examples of the phenyl group-containing polyorganosiloxane include: 31 R 32 SiO 2 / 2 The siloxane units (D 30 units) of polyorganosiloxane.

[0236] R 31 is a group bonded to a silicon atom, representing a phenyl group or an alkyl group, R 32 It is a group bonded to a silicon atom and represents a phenyl group. Specific examples of the alkyl group include those mentioned above, and a methyl group is preferred.

[0237] The phenyl-containing polyorganosiloxane comprises the above-mentioned siloxane units (D 30 Unit), but except for D 30 In addition to the Q unit, the Q unit, the M unit and / or the T unit may be contained.

[0238] In a preferred embodiment of the present invention, specific examples of phenyl-containing polyorganosiloxanes include: 30 Polyorganosiloxane composed of units; containing D 30 Unit and Q unit polyorganosiloxane; containing D 30 Unit and M unit polyorganosiloxane; containing D 30 Units and T units of polyorganosiloxane; containing D 30 Unit, Q unit and M unit polyorganosiloxane; containing D 30 Unit, M unit and T unit polyorganosiloxane; containing D 30 unit, Q unit, M unit and T unit of the polyorganosiloxane.

[0239] Specific examples of the phenyl group-containing polyorganosiloxane include polyorganosiloxanes represented by formula (P1) or (P2), but are not limited thereto.

[0240]

[0241] (m5 and n5 represent the number of repeating units and are positive integers.)

[0242]

[0243] (m6 and n6 represent the number of repeating units and are positive integers.)

[0244] The polyorganosiloxane as the release agent component (B) may be a commercially available product or a synthesized polyorganosiloxane.

[0245] Examples of commercially available polyorganosiloxanes include Wacker Chemie's WACKERSILICONE FLUID AK series (AK 50, AK 350, AK 1000, AK 10000, AK 1000000), GENIOPLAST GUM, Shin-Etsu Chemical's dimethyl silicone oils (KF-96L, KF-96A, KF-96, KF-96H, KF-69, KF-965, KF-968), and cyclic dimethyl silicone oil (KF-995); Gelest's epoxy-containing polyorganosiloxanes (trade names CMS-227 and ECMS-327); Shin-Etsu Chemical's epoxy-containing polyorganosiloxanes (KF-101, KF-1001, KF-1005, and X-22-343); and Dow Chemical's Epoxy-containing polyorganosiloxanes (KF-101, KF-1001, KF-1005, and X-22-343). Epoxy-containing polyorganosiloxane (BY16-839) manufactured by Corning; phenyl-containing polyorganosiloxane (PMM-1043, PMM-1025, PDM-0421, PDM-0821) manufactured by Gelest; phenyl-containing polyorganosiloxane (KF50-3000CS) manufactured by Shin-Etsu Chemical Co., Ltd.; phenyl-containing polyorganosiloxane (TSF431, TSF433) manufactured by Momentive; etc., but not limited to these.

[0246] In one embodiment, the adhesive composition used in the present invention contains both a curable component (A) and a non-curing component (B). In another embodiment, the adhesive composition contains polyorganosiloxane as the component (B).

[0247] An example of the adhesive composition used in the present invention may contain component (A) and component (B) in any ratio. If the balance between adhesion and releasability is taken into consideration, the ratio of component (A) to component (B) is preferably 99.995:0.005 to 30:70, and more preferably 99.9:0.1 to 75:25, in terms of mass ratio [(A):(B)].

[0248] Specifically, when the polyorganosiloxane component (A') that cures by a hydrosilylation reaction is included, the ratio of component (A') to component (B) is preferably 99.995:0.005 to 30:70, and more preferably 99.9:0.1 to 75:25, in terms of mass ratio [(A'):(B)].

[0249] The viscosity of the adhesive composition used in the present invention is not particularly limited, but is usually 500 to 20,000 mPa·s at 25° C., and preferably 1,000 to 10,000 mPa·s.

[0250] One example of the adhesive composition used in the present invention can be produced by mixing the component (A), the component (B) when used, and a solvent.

[0251] The order of mixing is not particularly limited. Examples of methods for easily and reproducibly producing the adhesive composition include: dissolving component (A) and component (B) in a solvent; and dissolving a portion of component (A) and component (B) in a solvent and the remaining portion in a solvent, and mixing the resulting solutions. It should be noted that, when preparing the adhesive composition, heating may be performed as appropriate within a range that does not decompose or deteriorate the components.

[0252] In the present invention, for the purpose of removing foreign matter, the solvent, solution, etc. used may be filtered using a filter or the like during the production of the adhesive composition or after all the components are mixed.

[0253] The thickness of the adhesive layer of the laminate of the present invention is not particularly limited and is generally 5 to 500 μm. From the viewpoint of maintaining film strength, it is preferably 10 μm or more, more preferably 20 μm or more, and even more preferably 30 μm or more. From the viewpoint of avoiding unevenness caused by a thick film, it is preferably 200 μm or less, more preferably 150 μm or less, even more preferably 120 μm or less, and even more preferably 70 μm or less.

[0254] The method of forming the adhesive layer from the adhesive composition will be described in detail in the description of "Method for producing an example of a laminate in the first embodiment" described below.

[0255] An example of the structure of the laminated body according to the first embodiment will be described below using the drawings.

[0256] Figure 1 A schematic cross-sectional view showing an example of the laminated body according to the first embodiment.

[0257] Figure 1 The laminated body includes a semiconductor substrate 1 , an adhesive layer 2 , a release agent layer 3 , and a support substrate 4 in this order.

[0258] The adhesive layer 2 and the release agent layer 3 are provided between the semiconductor substrate 1 and the support substrate 4. The adhesive layer 2 is in contact with the semiconductor substrate 1. The release agent layer 3 is in contact with the adhesive layer 2 and the support substrate 4.

[0259] <<Method for producing an example of the laminated body in the first embodiment>>

[0260] In the laminated body of the first embodiment Figure 1The laminate shown is an example, and a method for producing the laminate will be described below.

[0261] The laminate of the present invention can be manufactured, for example, by the following method, which includes: a first step of applying an adhesive composition to the surface of a semiconductor substrate and, if necessary, heating it to form an adhesive coating layer; a second step of applying a release agent composition to the surface of a supporting substrate and, if necessary, heating it to form a release agent coating layer; and a third step of subjecting the adhesive coating layer of the semiconductor substrate and the release agent coating layer of the supporting substrate to at least one of a heating treatment and a pressure reduction treatment while applying a load in the thickness direction of the semiconductor substrate and the supporting substrate to make them adhere to each other, and then subjecting them to a post-heating treatment, thereby forming a laminate.

[0262] It should be noted that in Figure 1 In the laminate, a semiconductor substrate 1, an adhesive layer 2, a release agent layer 3, and a supporting substrate 4 are sequentially stacked, so the above-mentioned manufacturing method is listed as an example. However, for example, in the case of manufacturing a laminate in which a semiconductor substrate 1, a release agent layer 3, an adhesive layer 2, and a supporting substrate 4 are sequentially stacked, it can be manufactured by the following method, which includes: a first step of applying a release agent composition to the surface of the semiconductor substrate and heating it if necessary to form a release agent coating layer; a second step of applying an adhesive composition to the surface of the supporting substrate and heating it if necessary to form an adhesive coating layer; and a third step of applying at least one of a heating treatment and a decompression treatment to the release agent coating layer of the semiconductor substrate and the adhesive coating layer of the supporting substrate while applying a load in the thickness direction of the semiconductor substrate and the supporting substrate to make them tightly fitted, and then performing a post-heating treatment to thereby form a laminate.

[0263] It should be noted that, as long as the effects of the present invention are not impaired, the coating and heating of the respective compositions may be performed sequentially on either substrate.

[0264] The coating method is not particularly limited, but is usually spin coating. Alternatively, a coating film may be formed separately by spin coating or the like, and the sheet-like coating film may be attached as the adhesive coating layer.

[0265] The heating temperature of the applied adhesive composition varies depending on the type and amount of the adhesive components contained in the adhesive composition; whether a solvent is contained; the boiling point of the solvent used; the desired thickness of the adhesive layer, etc., and therefore cannot be generally specified. However, it is generally 80 to 150°C, and the heating time is generally 30 seconds to 5 minutes.

[0266] When the adhesive composition contains a solvent, the adhesive composition after application is usually heated.

[0267] The heating temperature of the applied release agent composition varies depending on the type and amount of the release agent component contained in the release agent composition, the desired release agent layer thickness, and other factors, so it cannot be generally specified. However, from the perspective of reproducibly achieving an appropriate release agent layer, it is preferably 80°C to 300°C. The heating time is generally determined within the range of 10 seconds to 10 minutes, depending on the heating temperature. The heating temperature is preferably 100°C to 280°C, more preferably 150°C to 250°C. The heating time is preferably 30 seconds to 8 minutes, more preferably 1 minute to 5 minutes.

[0268] Heating can be performed using a hot plate, an oven, or the like.

[0269] The thickness of the adhesive coating layer obtained by applying the adhesive composition and heating it if necessary is appropriately determined so that the thickness of the adhesive layer is ultimately within the above-mentioned range.

[0270] The thickness of the release agent coating layer obtained by applying the release agent composition and heating it if necessary is appropriately determined so that the thickness of the release agent layer is ultimately within the above-mentioned range.

[0271] In the present invention, such coating layers can be joined together in contact with each other, and a load in the thickness direction of the semiconductor substrate and the support substrate can be applied while being subjected to a heat treatment or a pressure reduction treatment, or both, to close the two layers, and then a post-heat treatment can be performed to obtain the laminate of the present invention. It should be noted that the treatment conditions for any of the heat treatment, the pressure reduction treatment, or the combination of the two can be appropriately determined based on various considerations such as the type of adhesive composition, the specific composition of the release agent composition, the phase properties of the film obtained from the two compositions, the film thickness, and the desired bonding strength.

[0272] The heat treatment temperature is generally appropriately determined within the range of 20 to 150° C. from the perspective of removing the solvent from the composition and softening the adhesive coating layer to achieve appropriate adhesion to the release agent coating layer. In particular, from the perspective of suppressing or avoiding excessive curing and unnecessary deterioration of the adhesive component (A), the temperature is preferably 130° C. or lower, more preferably 90° C. or lower. The heating time is appropriately determined depending on the heating temperature and the type of adhesive. From the perspective of reliably achieving appropriate adhesion, it is generally 30 seconds or longer, preferably 1 minute or longer. From the perspective of suppressing deterioration of the adhesive layer and other members, the heating time is generally 10 minutes or shorter, preferably 5 minutes or shorter.

[0273] The reduced pressure treatment may be performed by exposing the adhesive coating layer and the release agent coating layer in contact with each other to an air pressure of 10 to 10,000 Pa. The time for the reduced pressure treatment is usually 1 to 30 minutes.

[0274] From the viewpoint of obtaining a laminate in which the substrates can be well separated with good reproducibility, the two layers in contact with each other are preferably bonded together by a reduced pressure treatment, more preferably a combined heating treatment and a reduced pressure treatment.

[0275] The load in the thickness direction of the semiconductor substrate and the support substrate is not particularly limited as long as it does not adversely affect the semiconductor substrate, the support substrate, and the two layers therebetween and allows for strong adhesion between them, but is generally within the range of 10 to 1000 N.

[0276] From the viewpoint of achieving a sufficient curing speed, the post-heating temperature is preferably 120° C. or higher, and from the viewpoint of preventing deterioration of the substrate and each layer, the post-heating temperature is preferably 260° C. or lower.

[0277] From the perspective of achieving proper bonding between the substrate and the layers constituting the laminate, the post-heating time is usually more than 1 minute, preferably more than 5 minutes. From the perspective of suppressing or avoiding the adverse effects of excessive heating on the layers, the post-heating time is usually less than 180 minutes, preferably less than 120 minutes.

[0278] Heating can be performed using a hot plate, an oven, etc. When post-heating is performed using a hot plate, either the semiconductor substrate or the support substrate of the stack can be heated facing downward. However, from the perspective of achieving appropriate peeling with good reproducibility, post-heating is preferably performed with the semiconductor substrate facing downward.

[0279] It should be noted that one of the purposes of the post-heat treatment is to achieve a more suitable adhesive layer and release agent layer as a self-supporting film, and in particular, to achieve suitable curing by a hydrosilylation reaction.

[0280] <Second Implementation Plan>

[0281] The laminate having the electronic device layer is used for processing the electronic device layer. During processing of the electronic device layer, the electronic device layer is adhered to the support substrate via the adhesive layer. After processing of the electronic device layer, the release agent layer is irradiated with light, and then the electronic device layer is separated from the support substrate.

[0282] <<Electronic device layer>>

[0283] The electronic device layer refers to a layer having electronic devices. In the present invention, it refers to a layer in which a plurality of semiconductor chip substrates are embedded in a sealing resin, that is, a layer including a plurality of semiconductor chip substrates and a sealing resin arranged between the semiconductor chip substrates.

[0284] Here, "electronic device" refers to a component that constitutes at least a portion of an electronic component. The electronic device is not particularly limited and may be an electronic device having various mechanical structures or circuits formed on the surface of a semiconductor substrate. The electronic device is preferably a composite of a component composed of a metal or semiconductor and a resin that seals or insulates the component. The electronic device may be an electronic device in which the redistribution layer and / or semiconductor element or other element described later is sealed or insulated with a sealing material or insulating material, and may have a single-layer or multi-layer structure.

[0285] <<Support substrate>>

[0286] As the supporting substrate, the same supporting substrate as that described in the column of "Supporting Substrate" in the above-mentioned "First Embodiment" can be exemplified.

[0287] <<Release agent layer>>

[0288] The release agent layer is formed using the above-mentioned adhesive composition for light irradiation release of the present invention.

[0289] The release agent layer is described in detail in the section "Release Agent Layer" in the above-mentioned "First Embodiment".

[0290] <<Adhesive layer>>

[0291] The adhesive layer is formed using the above-mentioned adhesive composition.

[0292] The adhesive layer is described in detail in the section "Adhesive layer" in the above-mentioned "First embodiment".

[0293] An example of the structure of the laminated body according to the second embodiment will be described below with reference to the drawings.

[0294] Figure 2 A schematic cross-sectional view showing an example of a laminate according to the second embodiment.

[0295] Figure 2 The laminated body includes a support substrate 24, a release agent layer 23, an adhesive layer 22, and an electronic device layer 26 in this order.

[0296] The electronic device layer 26 includes a plurality of semiconductor chip substrates 21 and a sealing resin 25 as a sealing material disposed between the semiconductor chip substrates 21 .

[0297] The adhesive layer 22 and the release agent layer 23 are provided between the electronic device layer 26 and the support substrate 24. The adhesive layer 22 is in contact with the electronic device layer 26. The release agent layer 23 is in contact with the adhesive layer 22 and the support substrate 24.

[0298] <<Method for producing an example of a laminate in the second embodiment>>

[0299] In the laminated body of the second embodiment Figure 2 The laminate shown is an example, and a method for producing the laminate will be described below.

[0300] The laminate of the present invention can be manufactured, for example, by the following method, which includes: a first step, applying a release agent composition on the surface of the above-mentioned supporting substrate to form a release agent coating layer (further heating to form a release agent layer as needed); a second step, applying an adhesive composition on the surface of the above-mentioned release agent coating layer or release agent layer to form an adhesive coating layer (further heating to form an adhesive layer as needed); a third step, placing a semiconductor chip substrate on the adhesive coating layer or adhesive layer, and bonding the semiconductor chip substrate to the adhesive coating layer or adhesive layer while performing at least any one of a heating treatment and a decompression treatment; a fourth step, curing the adhesive coating layer by post-heating to form an adhesive layer; and a fifth step, sealing the semiconductor chip substrate fixed on the adhesive layer using a sealing resin.

[0301] When the third step is described in more detail, for example, the step of the embodiment (i) below can be cited.

[0302] (i) placing a semiconductor chip substrate on an adhesive coating layer or an adhesive layer, applying a load in the thickness direction of the semiconductor chip substrate and the supporting substrate to make them close together while performing at least one of a heating treatment and a decompression treatment, and bonding the semiconductor chip substrate to the adhesive coating layer or the adhesive layer.

[0303] It should be noted that the post-heating treatment of the adhesive coating layer to cure it in the fourth step and the step of forming the adhesive layer can be performed after the semiconductor chip substrate is bonded to the adhesive coating layer in the third step, or can be performed simultaneously with the third step. For example, the semiconductor chip substrate can be placed on the adhesive coating layer, and the adhesive coating layer can be heated to cure while applying a load in the thickness direction of the semiconductor chip substrate and the support substrate. This can simultaneously achieve close adhesion between the semiconductor chip substrate and the adhesive coating layer and cure from the adhesive coating layer to the adhesive layer, thereby bonding the adhesive layer to the semiconductor chip substrate.

[0304] In addition, the process of forming the adhesive layer by post-heating the adhesive coating layer to solidify it as specified in the fourth process can be performed before the third process, or the semiconductor chip substrate can be placed on the adhesive layer and the adhesive layer and the semiconductor chip substrate can be bonded while applying a load in the thickness direction of the semiconductor chip substrate and the supporting substrate.

[0305] The coating method, the release agent composition after coating, the heating temperature and heating method of the adhesive composition are as described in the above <<Method for producing an example of a laminate in the first embodiment>> of the <First embodiment>.

[0306] The method for producing the laminated body according to the second embodiment will be described below in more detail with reference to the drawings.

[0307] like Figure 3 As shown, a release agent coating layer 23' made of a release agent composition is formed on a support substrate 24. At this time, the release agent coating layer 23' may be heated to form the release agent layer 23.

[0308] Then, if Figure 4 As shown, an adhesive coating layer 22' made of an adhesive composition is formed on the release coating layer 23' or the release layer 23. At this time, the adhesive coating layer 22' may be heated to form the adhesive layer 22.

[0309] Then, if Figure 5 As shown, a semiconductor chip substrate 21 is placed on an adhesive layer 22 or an adhesive coating layer 22'. A load in the thickness direction of the semiconductor chip substrate 21 and the support substrate 24 is applied to achieve close contact while performing at least one of a heating treatment and a pressure reduction treatment. This allows the semiconductor chip substrate 21 to be bonded to the adhesive layer 22 or the adhesive coating layer 22'. When the semiconductor chip substrate 21 is bonded to the adhesive coating layer 22', the adhesive coating layer 22' is post-heated to cure it, thereby forming the adhesive layer 22, and the semiconductor chip substrate 21 is fixed to the adhesive layer 22.

[0310] In addition, when the adhesive coating layer 22 ′ is subjected to the post-heat treatment, the release agent coating layer 23 ′ may be subjected to the post-heat treatment at the same time, thereby forming the release agent layer 23 .

[0311] Then, if Figure 6 As shown in FIG. 1 , the semiconductor chip substrate 21 fixed on the adhesive layer 22 is sealed using a sealing resin 25. Figure 6 In the embodiment, a plurality of semiconductor chip substrates 21 temporarily bonded to a support substrate 24 via an adhesive layer 22 are sealed with a sealing resin 25. An electronic device layer 26 is formed on the adhesive layer 22, comprising the semiconductor chip substrates 21 and the sealing resin 25 disposed between the semiconductor chip substrates 21. Thus, the electronic device layer 26 serves as a base layer in which the plurality of semiconductor chip substrates are embedded in the sealing resin.

[0312] <<<Sealing process>>>

[0313] The semiconductor chip substrate 21 is sealed using a sealing material.

[0314] As a sealing material for sealing the semiconductor chip substrate 21 , a member capable of insulating or sealing a member made of metal or semiconductor is used.

[0315] In the present invention, a resin composition is used as the sealing material. The type of sealing resin is not particularly limited as long as it can seal and / or insulate metals or semiconductors. For example, epoxy resins or silicone resins are preferably used.

[0316] The sealing material may contain other components such as fillers in addition to the resin component. Examples of the filler include spherical silica particles.

[0317] In the sealing process, a sealing resin heated to, for example, 130 to 170°C is supplied to the adhesive layer 22 while maintaining a high viscosity and covering the semiconductor chip substrate 21, and compression molding is performed, thereby forming a layer of sealing resin 25 on the adhesive layer 22. At this time, the temperature condition is, for example, 130 to 170°C. In addition, the pressure applied to the semiconductor chip substrate 21 is, for example, 50 to 500 N / cm 2 .

[0318] (Method for Manufacturing Processed Semiconductor Substrate or Electronic Device Layer)

[0319] By using the laminate of the present invention, a method for producing a processed semiconductor substrate or a method for producing a processed electronic device layer can be provided.

[0320] The "method for producing a processed semiconductor substrate" uses the laminate described in the "First embodiment" of the aforementioned (laminate). Furthermore, the "method for producing a processed electronic device layer" uses the laminate described in the "Second embodiment" of the aforementioned (laminate).

[0321] The “method for producing a processed semiconductor substrate” will be described in the following <Third Embodiment>, and the “method for producing a processed electronic device layer” will be described in the following <Fourth Embodiment>.

[0322] <Third Implementation Plan>

[0323] The method for manufacturing a processed semiconductor substrate of the present invention includes the following step 5A and the following step 6A.

[0324] Here, step 5A is a step of processing the semiconductor substrate in the laminate described in the section of the above-mentioned <First Embodiment>.

[0325] In addition, step 6A is a step of separating the semiconductor substrate processed in step 5A from the support substrate.

[0326] In the 5A step, the processing performed on the semiconductor substrate refers to, for example, the processing on the opposite side of the circuit surface of the wafer, and the thinning of the wafer by grinding the back side of the wafer can be cited. Then, for example, through silicon vias (TSVs) are formed, and then the thinned wafer is peeled off from the supporting substrate to form a stack of wafers for three-dimensional mounting. In addition, for example, the formation of electrodes on the back side of the wafer is also performed before and after the three-dimensional mounting. In the thinning and TSV processes of the wafer, heat of about 250 to 350°C is applied in a state of being bonded to the supporting substrate. The stack of the present invention usually includes an adhesive layer and has heat resistance for the load it bears.

[0327] Note that the processing is not limited to the above-mentioned processing, and includes, for example, a semiconductor component mounting process in which temporary bonding to a support substrate is performed in order to support a base material for mounting a semiconductor component.

[0328] In step 6A, the method of separating (peeling) the semiconductor substrate from the support substrate includes, but is not limited to, mechanical peeling using a tool having a sharp portion after irradiating the release agent layer with light, peeling by tearing between the support and the semiconductor chip, etc.

[0329] By irradiating the release agent layer with light from the support substrate side, the release agent layer is degraded (eg, separated or decomposed) as described above, and then, for example, one of the substrates is pulled up to easily separate the semiconductor substrate from the support substrate.

[0330] It is not necessary to irradiate the release agent layer with light on the entire area of the release agent layer. Even if there are a mixture of areas irradiated with light and areas not irradiated with light, as long as the peeling ability of the release agent layer as a whole is sufficiently improved, the semiconductor substrate can be separated from the support substrate by a slight external force such as pulling up the support substrate. The ratio and positional relationship of the areas irradiated with light and the areas not irradiated with light vary depending on the type of adhesive used, its specific composition; the thickness of the adhesive layer; the thickness of the release agent layer; the intensity of the irradiated light, etc., but those skilled in the art can set appropriate conditions without excessive experiments. Due to such circumstances, according to the method for manufacturing a processed semiconductor substrate of the present invention, for example, when the support substrate of the stacked body used is light-transmitting, the light irradiation time can be shortened when peeling is performed by irradiating light from the support substrate side. As a result, not only can an improvement in throughput be expected, but also physical stress for peeling can be avoided, and the semiconductor substrate can be easily and efficiently separated from the support substrate only by irradiation with light.

[0331] Generally, the irradiation dose of light used for peeling is 50 to 3000 mJ / cm 2The irradiation time is appropriately determined according to the wavelength and irradiation dose.

[0332] The wavelength of the light used for stripping is preferably 250 to 600 nm, more preferably 250 to 370 nm. More suitable wavelengths are 254 nm, 308 nm, 343 nm, 355 nm, 365 nm, or 532 nm, with 254 nm or 365 nm being particularly preferred. The amount of light required for stripping is an amount sufficient to cause appropriate degradation, such as decomposition, of the specific light-absorbing compound.

[0333] The light used for the peeling may be laser light or non-laser light emitted from a light source such as an ultraviolet lamp. In the present invention, non-laser light emitted from a light source such as an ultraviolet lamp is preferably used.

[0334] The cleaning composition may be sprayed on the surface of at least any one of the separated semiconductor substrate and the support substrate, or the separated semiconductor substrate or the support substrate may be immersed in the cleaning composition to clean the substrate.

[0335] Alternatively, the surface of a processed semiconductor substrate or the like can be cleaned using a removal tape or the like.

[0336] The constituent elements and method elements related to the above-described steps of the method for manufacturing a processed semiconductor substrate of the present invention may be variously modified without departing from the spirit of the present invention.

[0337] The method for producing a processed semiconductor substrate of the present invention may include steps other than the above-mentioned steps.

[0338] In the peeling method of the present invention, when the semiconductor substrate or the supporting substrate of the laminate is light-transmissive, the semiconductor substrate and the supporting substrate of the laminate are separated by irradiating the release agent layer with light from the semiconductor substrate side or the supporting substrate side.

[0339] In the laminate of the present invention, the semiconductor substrate and the support substrate are temporarily bonded appropriately and releasably via an adhesive layer and a release agent layer. Therefore, for example, if the support substrate is light-transmissive, the semiconductor substrate and the support substrate can be easily separated by irradiating the release agent layer with light from the support substrate side of the laminate. Typically, the release is performed after the semiconductor substrate of the laminate has been processed.

[0340] <Fourth Implementation Plan>

[0341] The method for producing a processed electronic device layer of the present invention includes the following step 5B and the following step 6B.

[0342] Here, step 5B is a step of processing the electronic device layer in the laminate described in the section of the above-mentioned <Second embodiment>.

[0343] In addition, step 6B is a step of separating the electronic device layer processed in step 5B from the support substrate.

[0344] Examples of the processing performed on the electronic device layer in step 5B include a grinding step and a wiring layer forming step.

[0345] <<Grinding process>>

[0346] The grinding step is a step of grinding the resin portion of the sealing resin 25 layer in the electronic device layer 26 so that a portion of the semiconductor chip substrate 21 is exposed after the above-mentioned sealing step.

[0347] Grinding of the sealing resin part, for example Figure 7 As shown, this is performed by grinding the sealing resin 25 layer to a thickness substantially the same as that of the semiconductor chip substrate 21 .

[0348] <<Wiring layer formation process>>

[0349] The wiring layer forming step is a step of forming a wiring layer on the exposed semiconductor chip substrate 21 after the above-mentioned grinding step.

[0350] exist Figure 8 In the embodiment, a wiring layer 28 is formed on an electronic device layer 26 including a semiconductor chip substrate 21 and a sealing resin 25 .

[0351] The wiring layer 28, also known as the RDL (Redistribution Layer), is a thin-film wiring body that forms wiring connected to the substrate and can have a single-layer or multi-layer structure. The wiring layer can be made of a conductor (such as aluminum, copper, titanium, nickel, gold, silver, and other metals, as well as silver-tin alloys) on a dielectric (silicon oxide (SiO X ), a layer in which wiring is formed between photosensitive resins such as photosensitive epoxy resin, etc., but is not limited to this.

[0352] As a method of forming the wiring layer 28 , for example, the following method can be cited.

[0353] First, silicon oxide (SiO X ), a dielectric layer such as a photosensitive resin. The dielectric layer composed of silicon oxide can be formed, for example, by sputtering, vacuum evaporation, or the like. The dielectric layer composed of a photosensitive resin can be formed, for example, by applying the photosensitive resin onto the layer of the sealing resin 25 by spin coating, dipping, roller blade coating, spray coating, slit coating, or the like.

[0354] Next, wiring is formed on the dielectric layer using a conductor such as metal. Methods for forming wiring can include, for example, photolithography (resist lithography) or other known semiconductor process methods such as etching. Examples of such photolithography include photolithography using positive-type resist materials and photolithography using negative-type resist materials.

[0355] In the method for manufacturing the laminated body of the fourth embodiment, bumps may be further formed or components may be mounted on the wiring layer 28. The components may be mounted on the wiring layer 28 using, for example, a chip mounter.

[0356] The laminated body of the fourth embodiment may be a laminated body produced by a process based on a fan-out technology in which terminals provided on a semiconductor chip substrate are mounted on a wiring layer extending outside the chip region.

[0357] In step 6B, the method of separating (peeling) the electronic device layer from the supporting substrate includes, but is not limited to, mechanical peeling using a tool with a sharp portion after irradiating the peeling agent layer with light, peeling by tearing between the supporting body and the electronic device layer, etc.

[0358] By irradiating the release agent layer with light from the support substrate side, the release agent layer is degraded (eg, separated or decomposed) as described above, and then, for example, the electronic device layer and the support substrate can be easily separated by pulling up one of the substrates.

[0359] Figures 9 and 10 is a schematic cross-sectional view for explaining a method for separating a laminated body. Figure 11 This is a schematic cross-sectional view for explaining a method for cleaning a laminate after separation. Figures 9 to 11 , which can illustrate an embodiment of a method for manufacturing a semiconductor package (electronic component).

[0360] like Figure 9 As shown, the step of separating the laminated body is a step of irradiating the release agent layer 23 with light (arrow) via the support substrate 24 to deteriorate the release agent layer 23 , thereby separating the electronic device layer 26 from the support substrate 24 .

[0361] After the release agent layer 23 is irradiated with light (arrow) to deteriorate the release agent layer 23, Figure 10 As shown, the support substrate 24 is separated from the electronic device layer 26 .

[0362] The conditions and method of light irradiation on the adhesive layer are as described in the above-mentioned section of the <Third embodiment>.

[0363] The substrate can be cleaned by spraying the cleaning composition on the surface of at least any one of the separated electronic device layer and the supporting substrate, or by immersing the separated electronic device layer or the supporting substrate in the cleaning composition.

[0364] Alternatively, the surface of the processed electronic device layer or the like can be cleaned using a removal tape or the like.

[0365] For example, in Figure 10 In the process, after the separation step, the adhesive layer 22 and the release agent layer 23 are attached to the electronic device layer 26. By using a cleaning agent composition such as an acid or an alkali, the adhesive layer 22 and the release agent layer 23 are decomposed and removed. By removing the release agent layer and the adhesive layer, the following can be appropriately obtained: Figure 11 The processed electronic device layer (electronic component) is shown.

[0366] The constituent elements and method elements related to the above-mentioned steps of the method for producing a processed electronic device layer of the present invention may be variously modified without departing from the spirit of the present invention.

[0367] The method for producing a processed electronic device layer of the present invention may include steps other than the above-mentioned steps.

[0368] In the laminate of the present invention, the electronic device layer and the supporting substrate are temporarily bonded appropriately and releasably via an adhesive layer. Therefore, for example, when the supporting substrate is light-transmissive, the electronic device layer and the supporting substrate can be easily separated by irradiating the release agent layer with light from the supporting substrate side of the laminate. Typically, the release is performed after the electronic device layer of the laminate has been processed.

[0369] Example

[0370] The present invention will be described in more detail below with reference to Examples, but the present invention is not limited to the following Examples.

[0371] [Installation]

[0372] (1) Laminating device: manual laminating machine manufactured by SUSS MicroTec.

[0373] (2) 254 nm UV irradiation device: QRU-2374 manufactured by ORC Manufacturing Co., Ltd.

[0374] (3) 365 nm UV irradiation device: Omiya Industry Co., Ltd. UVI-MA.

[0375] [1] Preparation of adhesive composition

[0376] [Preparation Example 1]

[0377] In a 600 mL stirring container for a stirrer, 80 g of an MQ resin containing polysiloxane and a vinyl group (manufactured by Wacker Chemie) as the polyorganosiloxane (a1), 2.52 g of a SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) with a viscosity of 100 mPa·s as the polyorganosiloxane (a2), 5.89 g of a SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) with a viscosity of 70 mPa·s as the polyorganosiloxane (a2), and 0.22 g of 1-ethynylcyclohexanol (manufactured by Wacker Chemie) as a polymerization inhibitor (A3) were added, and the mixture was stirred for 5 minutes using a stirrer.

[0378] To the resulting mixture, 3.96 g of a mixture obtained by stirring for 5 minutes with a stirrer was added, which was obtained by stirring for 5 minutes, 0.147 g of a platinum catalyst (manufactured by Wacker Chemie) as a platinum group metal catalyst (A2) and 5.81 g of a vinyl-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 1000 mPa·s as a polyorganosiloxane (a1), and the mixture was stirred for 5 minutes with a stirrer.

[0379] Finally, the obtained mixture was filtered through a 300-mesh nylon filter to obtain an adhesive composition (A). The viscosity of the adhesive measured with a viscometer was 10,000 mPa·s.

[0380] [2] Synthesis of Nitrobenzene Derivative Polymers

[0381] [Synthesis example 1]

[0382] Into a flask were added 11.0 g of a polyglycidyl methacrylate polymer, 5.4 g of 3-methyl-2-nitrobenzoic acid, 0.2 g of tetrabutylphosphonium bromide as a catalyst, 33.6 g of propylene glycol monomethyl ether acetate as a solvent, and 41 g of 1-methoxy-2-propanol. The mixture was stirred and reacted at 105° C. for 24 hours.

[0383] After the reaction mixture was cooled to room temperature, a composition containing the target polymer was obtained: a nitrobenzene derivative polymer represented by the following formula (5-1-1).

[0384] The polyglycidyl methacrylate polymer used this time was dissolved in propylene glycol monomethyl ether acetate to give 32.2% by mass, and the epoxy value at that time was 6.2 mol / kg.

[0385]

[0386] [3] Synthesis of oxime ester derivative polymers

[0387] [Synthesis example 2]

[0388] 5.0 g of acetophenone oxime, 5.8 g of 4-vinylbenzoic acid, 9.7 g of 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide hydrochloride, 1.0 g of 4-dimethylaminopyridine, and 42.8 g of tetrahydrofuran as a solvent were added to a flask and stirred. The resulting mixture was then stirred at room temperature for 24 hours.

[0389] The reaction mixture was extracted with ethyl acetate and water to obtain an organic layer, which was then dried under reduced pressure to obtain the target compound.

[0390] 15.0 g of the obtained compound, 0.4 g of azobisisobutyronitrile as a radical polymerization initiator, and 36.0 g of propylene glycol monomethyl ether acetate as a solvent were added to a flask and stirred, and then the obtained mixture was reacted at 60° C. overnight.

[0391] After the reaction mixture was cooled to room temperature, the cooled reaction mixture was obtained as a composition containing the target polymer: a polymer of an oxime ester derivative represented by the following formula (5-2-1).

[0392]

[0393] [4] Synthesis of aromatic azide derivative polymers

[0394] [Synthesis example 3]

[0395] Into a flask were added 10.0 g of a polyglycidyl methacrylate polymer, 3.7 g of 4-azidobenzoic acid, 0.4 g of tetrabutylphosphonium bromide as a catalyst, 25.1 g of propylene glycol monomethyl ether acetate as a solvent, and 31.8 g of 1-methoxy-2-propanol. The mixture was stirred and reacted at 105° C. for 24 hours.

[0396] After the reaction mixture was cooled to room temperature, a composition containing the target polymer was obtained: an aromatic azide derivative polymer represented by the following formula (5-3-1).

[0397] The polyglycidyl methacrylate polymer used this time was dissolved in propylene glycol monomethyl ether acetate to give 32.2% by mass, and the epoxy value at that time was 6.2 mol / kg.

[0398]

[0399] [5] Preparation of stripping agent composition

[0400] [Example 1-1]

[0401] The nitrobenzene derivative polymer obtained in Synthesis Example 1 was dissolved in propylene glycol monomethyl ether acetate so as to have a concentration of 18.4% by mass to prepare a solution, thereby obtaining a stripping agent composition.

[0402] [Example 1-2]

[0403] The oxime ester derivative polymer obtained in Synthesis Example 2 was dissolved in propylene glycol monomethyl ether acetate so as to have a concentration of 20% by mass to prepare a solution, thereby obtaining a stripping agent composition.

[0404] [Examples 1-3]

[0405] The aromatic azide derivative obtained in Synthesis Example 3 was dissolved in propylene glycol monomethyl ether acetate so as to have a concentration of 10% by mass to prepare a solution, thereby obtaining a stripping agent composition.

[0406] [Examples 1-4]

[0407] 2.0 g of polyacrylic acid, 1.0 g of sodium 1,2-naphthoquinone-2-diazide-4-sulfonate represented by the following formula (4-2), 13.5 g of propylene glycol monomethyl ether acetate as a solvent, and 13.5 g of 1-methoxy-2-propanol were added and stirred to obtain a stripping agent composition.

[0408]

[0409] [6] Manufacturing of laminated bodies

[0410] [Example 2-1]

[0411] The release agent composition obtained in Example 1-1 was spin-coated on a 100 mm glass wafer so that the film thickness of the final laminate would be approximately 3.0 μm, and heated at 100° C. for 1 minute to form a release agent coating layer on the glass wafer serving as a supporting substrate.

[0412] Meanwhile, the adhesive composition obtained in Preparation Example 1 was spin-coated on a 100 mm silicon wafer so that the film thickness of the final laminate would be approximately 60 μm, thereby forming an adhesive coating layer on the silicon wafer serving as a semiconductor substrate.

[0413] Next, a glass wafer and a silicon wafer were laminated using a laminating apparatus, sandwiching the release agent coating layer and the adhesive coating layer. A post-heat treatment was performed at 150°C for 10 minutes to produce a laminate. Lamination was performed at a temperature of 23°C and a reduced pressure of 1500 Pa. The desired number of laminates was produced.

[0414] [Examples 2-2 to 2-3]

[0415] Laminated bodies were produced by the same method as in Example 2-1 except that the release agent compositions obtained in Examples 1-2 to 1-3 were used instead of the release agent composition obtained in Example 1-1.

[0416] [Examples 2-4]

[0417] The release agent composition obtained in Example 1-4 was spin-coated on a 100 mm glass wafer so that the film thickness of the final laminate would be approximately 5.0 μm, and heated at 100° C. for 1 minute to form a release agent coating layer on the glass wafer serving as a supporting substrate.

[0418] Meanwhile, the adhesive composition obtained in Preparation Example 1 was spin-coated on a 100 mm silicon wafer so that the film thickness of the final laminate would be approximately 60 μm, thereby forming an adhesive coating layer on the silicon wafer serving as a semiconductor substrate.

[0419] Next, a glass wafer and a silicon wafer were laminated using a laminating apparatus, sandwiching the release agent coating layer and the adhesive coating layer. A post-heat treatment was performed at 100°C for 15 minutes to produce a laminate. Lamination was performed at 23°C and a reduced pressure of 1500 Pa. The desired number of laminates was produced.

[0420] [7] Confirmation of the optimal exposure dose of 254nm UV light and 365nm UV light

[0421] The laminates obtained in Examples 2-1 to 2-4 were irradiated with 254 nm UV light from the glass wafer side to the entire surface of the wafer using a UV irradiation device at an output of 100 to 30,000 mJ / cm 2 The lowest UV irradiation output at which peeling occurs was determined within the range of 100 nm and was taken as the optimal irradiation dose. The optimal irradiation dose under 254 nm UV light was 20,000 mJ / cm 2 .

[0422] Furthermore, the laminates obtained in Examples 2-1 to 2-4 were irradiated with 365 nm UV light from the glass wafer side to the entire surface of the wafer using a UV irradiation device at an output of 500 to 30,000 mJ / cm 2 The lowest UV irradiation output at which peeling occurs was determined within the range of 100 nm and was taken as the optimal irradiation dose. The optimal irradiation dose under 365 nm UV light was 20,000 mJ / cm 2 .

[0423] [8] Confirmation of peeling properties using 254nm UV light and 365nm UV light (confirmation of peeling based on full-surface irradiation)

[0424] [Example 3-1]

[0425] Using a UV irradiation device, the laminate obtained in Example 2-1 was irradiated with UV light from the glass wafer side to the entire surface of the wafer. After UV irradiation, it was confirmed whether the glass wafer could be peeled off. At this time, the UV output was set to 20,000 mJ / cm, which was the optimal irradiation dose. 2 .

[0426] As a result, it was confirmed that the glass wafer (carrier side) could be easily peeled off manually when irradiating with 254 nm UV light.

[0427] However, it cannot be peeled off when the UV light is 365nm.

[0428] [Example 3-2]

[0429] Using a UV irradiation device, the laminate obtained in Example 2-2 was irradiated with UV light from the glass wafer side to the entire surface of the wafer. After UV irradiation, it was confirmed whether the glass wafer could be peeled off. At this time, the UV output was set to 20000 mJ / cm, which was the optimal irradiation dose. 2 .

[0430] As a result, it was confirmed that the glass wafer (carrier side) could be easily peeled off manually when irradiating with 254 nm UV light.

[0431] However, it cannot be peeled off when the UV light is 365nm.

[0432] [Example 3-3]

[0433] Using a UV irradiation device, the laminate obtained in Example 2-3 was irradiated with UV light from the glass wafer side to the entire surface of the wafer. After UV irradiation, it was confirmed whether the glass wafer could be peeled off. At this time, the UV output was set to 20000mJ / cm, which was the optimal irradiation amount. 2 .

[0434] As a result, it was confirmed that the glass wafer (carrier side) could be easily peeled off manually when irradiating with 254 nm UV light.

[0435] However, it cannot be peeled off when the UV light is 365nm.

[0436] [Examples 3-4]

[0437] Using a UV irradiation device, the laminate obtained in Example 2-4 was irradiated with UV light from the glass wafer side to the entire surface of the wafer. After UV irradiation, it was confirmed whether the glass wafer could be peeled off. At this time, the UV output was set to 20000mJ / cm, which was the optimal irradiation amount. 2 .

[0438] As a result, it was confirmed that the glass wafer (carrier side) could be easily peeled off manually when irradiating with 254 nm UV light.

[0439] Furthermore, even when irradiated with 254 nm UV light, it was confirmed that the glass wafer (carrier side) could be easily peeled off manually.

[0440] The above examples confirmed that a composition layer formed using the remover composition for photo-irradiation removal specified in the present invention requires appropriate selection of a suitable wavelength, but that good removal by UV irradiation is possible by selecting a desired wavelength.

[0441] The stripping agent composition for light irradiation stripping specified in the present invention can provide a stripping agent composition, which is used to form the following stripping agent layer in the following laminate, wherein the laminate can firmly adhere the supporting substrate to the semiconductor substrate or the electronic device layer when the semiconductor substrate or the electronic device layer is processed, and after the substrate is processed, the supporting substrate can be easily separated from the semiconductor substrate or the electronic device layer by light irradiation. The stripping agent layer is a stripping agent layer for the laminate that can be stripped by light irradiation, and the stripping agent composition can easily strip the semiconductor substrate or the electronic device layer from the supporting substrate even if only by light irradiation without heating after light irradiation.

[0442] Description of Reference Numerals

[0443] 1: semiconductor substrate; 2: adhesive layer; 3: release agent layer; 4: supporting substrate; 5: release agent layer with adhesive properties; 21: semiconductor chip substrate; 22: adhesive layer; 23: release agent layer; 24: supporting substrate; 25: sealing resin; 26: electronic device layer; 27: release agent layer with adhesive properties; 28: wiring layer.

Claims

1. A release agent composition for light irradiation peeling, which is used to form the following release agent layer of the following laminated body, The laminate comprises: a semiconductor substrate or an electronic device layer, a light-transmitting support substrate, and an adhesive layer and a release agent layer provided between the semiconductor substrate or the electronic device layer and the support substrate. The electronic device layer includes a plurality of semiconductor chip substrates and a sealing resin disposed between the semiconductor chip substrates. The laminate is configured to: peel the semiconductor substrate or the electronic device layer from the support substrate after the release agent layer absorbs light irradiated from the support substrate side; The stripper composition is the following composition: i: a composition comprising a polymer including a photosensitive gas generating site, wherein the photosensitive gas generating site undergoes a chemical reaction upon receiving the light to generate gas; or ii: A composition comprising a compound including a photosensitive gas generating site and a polymer, wherein the photosensitive gas generating site generates gas by chemical reaction upon receiving the light.

2. The stripping agent composition according to claim 1, wherein The photosensitive gas generating portion has a structure selected from the group consisting of the following structures: nitrobenzene-based structure, oxime ester-based structure, azide-based structure, diazonium-based structure, ketoprofen-based structure, diazonaphthoquinone-based structure, azo-based structure, azodicarbonyl-based structure, sulfonylhydrazide-based structure, hydrazine-based structure, benzoin carbamate-based structure, 1,2,3-thiazole-based structure and diazomethanesulfonic acid-based structure.

3. The stripping agent composition according to claim 1, wherein The polymer containing the photosensitive gas generating portion is a polymer having a repeating unit represented by the following formula (1): In formula (1), A represents a trivalent hydrocarbon group, L represents a linking group, and X represents a photosensitive gas generating site.

4. The stripping agent composition according to claim 3, wherein The formula (1) is a repeating unit represented by any of the following formulas (2-1) to (2-3), and the linking group of L is at least any of a single bond, -CO-, -COO-, an alkyl group optionally having a substituent, and -NH-. In formulae (2-1) to (2-3), R represents a hydrogen bond or a methyl group; X represents a photosensitive gas generating site; and n represents an integer of 0 or 1.

5. The stripping agent composition according to claim 3, wherein In the above formula (1), the photosensitive gas generation site of X is represented by any of the following formulas (3-1) to (3-8): In formulae (3-1) to (3-8), * represents a bonding bond. The stripping agent composition according to claim 1 , wherein The compound containing a photosensitive gas generating site includes a compound represented by any of the following formulas (4-1) to (4-4), 7. A laminated body, wherein: The invention comprises: a semiconductor substrate or an electronic device layer, a light-transmitting support substrate, and an adhesive layer and a release agent layer provided between the semiconductor substrate or the electronic device layer and the support substrate. The electronic device layer includes a plurality of semiconductor chip substrates and a sealing resin disposed between the semiconductor chip substrates. The laminate is used for peeling the semiconductor substrate or the electronic device layer from the support substrate after the release agent layer absorbs light irradiated from the support substrate side, wherein The release agent layer is formed from the release agent composition according to any one of claims 1 to 6.

8. A method for manufacturing a processed semiconductor substrate or electronic device layer, wherein: include: Step 5A, processing the semiconductor substrate of the laminate according to claim 7; or step 5B, processing the electronic device layer of the laminate according to claim 7; as well as Step 6A is to separate the semiconductor substrate processed in step 5A from the support substrate; or Step 6B is to separate the electronic device layer processed in step 5B from the support substrate.

9. The method for manufacturing a processed semiconductor substrate or electronic device layer according to claim 8, wherein: The step 6A or the step 6B includes irradiating the laminate with UV light from the support substrate side.

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