Turbulence ring element for wafer electroplating and electroplating process
By designing the spoiler ring element for wafer electroplating, the problem of unevenness of the coating thickness caused by current congestion in the wafer gap area is solved, the stability and efficiency of the electroplating process are achieved, and the equipment maintenance cost is reduced.
Patent Information
- Application Number
- CN202510621617.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-15
- Publication Date
- 2025-08-08
- Estimated Expiration
- Not applicable · inactive patent
AI Technical Summary
During wafer plating, current congestion near the wafer notch area leads to thicker plating thickness, affecting the uniformity of the conductive metal layer. Traditional current plagiarism components need to be regularly disassembled and cleaned, which increases the cost of equipment maintenance.
A spoiler ring element for wafer electroplating is adopted, including an electroplating cavity, protective case, motor, gear, spoiler ring outer ring and inner ring. Through the motor driving gear, the inner ring of the spoiler ring meshed with the outer ring of the spoiler ring, drive the inner ring of the spoiler ring to rotate, generate spoiler, and evenly distribute the plating solution, combine the anode film and high resistor plate to reasonably guide the current, solve the problem of unevenness caused by the hollow and edge effects of the electroplating coating.
It improves the electroplating quality, reduces equipment maintenance costs, enhances the metal ion mass transfer efficiency in edge areas, ensures uniformity of the coating thickness, and improves the performance stability of semiconductor devices.
Smart Images
Figure CN120443311A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of wafer electroplating, and in particular to a spoiler ring element and an electroplating process for wafer electroplating. Background Art
[0002] The manufacture of semiconductor devices generally requires the formation of electrical conductors on semiconductor wafers. For example, conductive leads on a wafer are generally formed by electroplating (depositing) a conductive layer (e.g., copper) on the wafer and placing it into patterned grooves. Electroplating involves making electrical contact with the surface of the wafer on which the conductive layer is to be deposited (hereinafter referred to as the "wafer plating surface"). An electric current is then passed through the plating solution (i.e., a solution containing ions of the element to be deposited, such as a solution containing Cu2+) between the anode and the wafer plating surface (the wafer plating surface is the cathode). This causes an electrochemical reaction on the wafer plating surface, resulting in the formation of a conductive layer. In order to minimize variations in the characteristics of the devices formed on the wafer, it is particularly important to uniformly form a conductive layer (with a uniform thickness) on the wafer plating surface.
[0003] One issue that can arise during electroplating is the non-uniformity of the conductive layer deposited by conventional electroplating processes due to the "edge effect." This edge effect refers to the tendency for the conductive layer deposited near the wafer edge to be thicker than at the wafer center. This occurs because the potential near the electrical contacts at the wafer edge is significantly higher than at the wafer center due to a voltage drop radially from the wafer edge toward the center. This edge effect is particularly pronounced when plating thin resistive seed layers. To counteract this edge effect, one approach is to create non-laminar flow in the plating solution near the wafer edge. This involves adjusting the flow characteristics of the plating solution to reduce the thickness of the conductive layer deposited near the wafer edge. However, the adjustable range of flow characteristics is limited and difficult to control. Another conventional approach to counteracting the edge effect is to utilize a thief element close to the wafer. During the electroplating process, current is passed between the thief element and the anode, causing the conductive material to be deposited on the surface near the wafer edge where the thief element is located. This improves the uniformity of the conductive layer formed across the wafer surface. However, because conductive material is deposited on the thief element, it must be regularly removed and cleaned, increasing equipment maintenance costs and downtime. Furthermore, an additional power source must be provided to power the thief element, which increases the cost of using the device.
[0004] Another problem that arises during the electroplating process is that photoresist must be coated on the wafer's electroplating surface before electroplating. When electroplating on a substrate with a seed layer coated with patterned photoresist, the main portion of the wafer is shielded by the photoresist coating. Due to the uneven thickness (thicker at the edges) or density of the photoresist coating, the thickness of the metal coating near the edge of the wafer is uneven. This is because the thicker photoresist coating at the edge of the wafer has a thicker aspect ratio, making it difficult for metal ions to enter the bottom of the photoresist coating, resulting in electroplating voids. In addition, during the electroplating process, the photoresist in the wafer notch area is not exposed, which leads to current crowding near the wafer notch area, resulting in a thicker coating thickness in the wafer notch area, which also affects the uniformity of the conductive metal layer on the wafer surface.
[0005] In response to the above-mentioned and existing related technologies, the inventors believe that the following defects often exist: the current is crowded near the wafer notch area, which leads to a thicker coating thickness in the wafer notch area, and also affects the uniformity of the conductive metal layer on the wafer surface; therefore, in response to the above problems, a spoiler ring element for wafer electroplating is proposed. Summary of the Invention
[0006] The purpose of the present invention is to solve the shortcomings of the prior art that current crowding exists near the wafer notch area, which leads to thicker coating thickness in the wafer notch area and also affects the uniformity of the conductive metal layer on the wafer surface, and proposes a spoiler ring element for wafer electroplating.
[0007] In order to achieve the above-mentioned purpose, the present invention adopts the following technical scheme: a spoiler ring element for wafer electroplating, comprising an electroplating chamber, a protective shell is installed on the surface of the electroplating chamber, a motor is fixedly installed on the inner wall of the protective shell, the output end of the motor is fixedly connected to a gear, a liquid inlet is provided on the lower surface of the electroplating chamber, an anode film is fixedly installed on the surface of the electroplating chamber, a connecting block is fixedly installed on the surface of the anode film, a high-resistance plate is fixedly installed on the surface of the connecting block, a surface of the high-resistance plate is provided with a plurality of through holes, a spoiler ring bracket is fixedly installed on the surface of the spoiler ring bracket, a spoiler ring outer ring is fixedly installed on the surface of the spoiler ring bracket, the arc surface of the spoiler ring outer ring is provided with teeth, the gear is meshed with the teeth of the spoiler ring outer ring, a spoiler ring inner ring is slidably installed on the surface of the spoiler ring outer ring, the surface of the spoiler ring outer inner ring is fixedly connected with a protrusion, the surface of the spoiler ring inner ring is slidably connected with a wafer plate, the surface of the wafer plate is fixedly installed with a wafer bracket, and the surface of the electroplating chamber is fixedly connected with an anode.
[0008] The effect achieved by the above components is: through the motor driving gear to engage with the outer ring of the spoiler ring with teeth, the outer ring of the spoiler ring is driven to rotate, and cooperate with the inner ring of the spoiler ring to cause turbulence in the plating liquid around the wafer plate, so that the plating liquid is more evenly distributed, and the metal ion mass transfer efficiency in the edge area is enhanced, thereby improving the quality of wafer electroplating and solving the problem of voids in the electroplating layer. At the same time, components such as the anode film, connecting block and high-resistance plate reasonably guide the current to ensure the stability of the electroplating process and improve the practicality of the device.
[0009] Preferably, a connection groove is provided on the surface of the outer ring of the spoiler ring, and a connection block is slidably connected to the inner wall of the connection groove, and the connection block is fixedly connected to the inner ring of the spoiler ring.
[0010] The effect achieved by the above components is: by clamping the outer ring of the spoiler ring with the inner ring of the spoiler ring, it is easy to replace the inner ring of the spoiler ring with different protrusions. On the one hand, the protrusions can stir the electric liquid at the edge of the wafer, improve the edge flow field, enhance the mass transfer of the plating liquid components, and solve the problem of plating voids caused by excessive photoresist thickness. On the other hand, it can shield part of the electric field at the edge of the chip and offset the problem of plating unevenness caused by the edge effect.
[0011] Preferably, the anode is composed of a solid block of the metal to be electroplated.
[0012] The effect achieved by the above components is that by setting the anode as a solid block of the metal to be electroplated, as the electroplating process proceeds, the anode metal block will dissolve in the electroplating solution to provide the metal ions required for electroplating.
[0013] Preferably, an overflow weir is provided inside the electroplating chamber, and the overflow weir is connected to the liquid inlet.
[0014] The effect achieved by the above components is: by setting an overflow weir, the plating solution enters the anode cavity from the bottom liquid inlet, the anode passes through a layer of anode membrane and then enters the cathode cavity from the through hole of the high electric barrier plate, and finally flows out to the overflow weir through the gap between the bottom of the wafer plate and the upper surface of the inner ring of the spoiler ring, and the electrolyte circulates and enters the liquid inlet.
[0015] Preferably, the inner ring and the outer ring of the spoiler ring are both made of one of materials including but not limited to polytetrafluoroethylene, ceramics or special alloy materials.
[0016] The effects achieved by the above components are: achieving a corrosion-resistant effect, avoiding the situation where the inner ring and the outer ring of the spoiler ring are corroded by the electroplating liquid, and improving the practicality of the device.
[0017] Preferably, the electric motor is a motor whose speed can be precisely adjusted.
[0018] The effect achieved by the above components is that the rotation speed of the outer ring of the spoiler ring can be flexibly adjusted according to different wafer electroplating process requirements, thereby improving the practicality of the device.
[0019] Preferably, the diameter of the through holes of the high resistance plate is 0.3 mm to 0.8 mm, and the through holes are evenly distributed on the high resistance plate in a circular array.
[0020] The effect achieved by the above components is: by setting the diameter of the through hole of the high resistance plate to 0.3mm-0.8mm, the plating solution and metal ions are uniformly attached to the wafer plate, thereby improving the practicality of the device.
[0021] Preferably, the resistance value of the high resistance plate ranges from 80 ohms to 230 ohms.
[0022] Preferably, an electroplating process for a spoiler ring element for wafer electroplating comprises the following steps:
[0023] S1. Preparation: Check whether the electroplating chamber, protective shell, motor, gear, spoiler ring outer ring, spoiler ring inner ring, anode, anode film, and high resistance plate components are intact and installed correctly; select the anode according to the material, size and electroplating process requirements of the wafer to be electroplated. If the metal to be plated is copper, choose a copper block as the anode and install it on the electroplating chamber; adjust the speed of the motor to make it consistent with the spoiler ring rotation speed required for this electroplating. The speed range is set to 5-30 rpm;
[0024] S2. Electroplating solution treatment: inject the prepared Cu2+-containing electroplating solution into the electroplating chamber through the liquid inlet. The amount of electroplating solution injected must ensure that the anode is submerged and the liquid level is within the normal working range of the overflow weir. Turn on the heating device of the electroplating equipment to control the electroplating solution temperature at 20-50°C. At the same time, turn on the stirring device to ensure that the metal ions in the electroplating solution are evenly distributed.
[0025] S3, electroplating process: start the motor, the motor drives the gear to rotate, and the outer ring of the spoiler ring and the inner ring of the spoiler ring connected to it rotate synchronously. The protrusion on the spoiler ring stirs the plating solution around the wafer to generate turbulence; turn on the power supply, so that the current passes through the plating solution between the anode and the wafer plating surface, and electroplating begins. The wafer acts as the cathode, and the current density during the electroplating process is controlled at 1-5A / dm 2 , the electroplating time is determined according to the required coating thickness;
[0026] S4. Post-plating treatment: After the electroplating is completed, turn off the power supply and the motor; discharge the plating liquid in the plating chamber through the drain port, and clean the plating chamber, the outer ring of the spoiler ring, and the inner ring of the spoiler ring. Use deionized water and detergent as the cleaning liquid, and blow dry with dry nitrogen after cleaning; take out the electroplated wafer and perform quality inspection on its surface coating. The inspection items include the uniformity of the coating thickness and the surface roughness.
[0027] Preferably, in step S2, an additive of 0.1-0.5% by mass is added to the electroplating solution, wherein the additive is an organic compound containing nitrogen and phosphorus elements, including sodium ethylenediaminetetramethylenephosphonate; in step S3, the electroplating process is carried out under an inert gas atmosphere, and the inert gas flow rate is 5-10 L / min
[0028] The effects achieved by the above components are as follows: from the perspective of improving the electroplating quality, the motor (3) drives the gear (4) to engage with the outer ring of the spoiler ring (5), driving the outer ring of the spoiler ring (5) and the inner ring of the spoiler ring (6) to rotate, so that the electroplating solution around the wafer plate (16) generates a turbulent flow. This design makes the electroplating solution more evenly distributed, enhances the metal ion mass transfer efficiency in the edge area, effectively solves the problem of electroplating layer voids, and significantly improves the quality of wafer electroplating. At the same time, the current is reasonably guided by the anode film (12), the connecting block and the high resistance plate (8), ensuring the stability of the electroplating process and further ensuring the uniformity of the coating. The deviation of the coating thickness between the edge and the center can be controlled within a very small range, thereby improving the performance stability of the semiconductor device.
[0029] In terms of process flexibility, the motor (3) is a motor with a precisely adjustable speed, and the rotation speed of the spoiler ring outer ring (5) can be flexibly adjusted according to different wafer electroplating process requirements. In addition, the resistance value of the high resistance plate (8) ranges from 80 to 230 ohms, and the through hole diameter is 0.3 mm to 0.8 mm and is evenly distributed in a circular array, which can be adjusted according to actual process requirements, greatly improving the adaptability of the device to different electroplating processes.
[0030] From the perspective of equipment maintenance and cost control, the inner ring (6) and the outer ring (5) of the spoiler ring are made of corrosion-resistant materials (such as polytetrafluoroethylene, ceramics or special alloy materials), which avoids corrosion by electroplating liquid, prolongs the service life of the equipment and reduces maintenance costs. Moreover, compared with the traditional method of using stealing elements, the patent does not require additional power supply and does not require regular disassembly and cleaning of the elements, effectively reducing the cost of equipment use.
[0031] In terms of electroplating process optimization, the electroplating process steps are clear and scientific. Through precise control of electroplating solution treatment, electroplating process parameters (such as current density and electroplating time), the addition of specific additives to the electroplating solution, and electroplating under an inert gas atmosphere, the quality of the coating is further improved, metal ion oxidation is reduced, and the dispersion and stability of the electroplating solution are enhanced. BRIEF DESCRIPTION OF THE DRAWINGS
[0032] Figure 1 It is a schematic diagram of the three-dimensional structure of the present invention;
[0033] Figure 2 For the present invention Figure 1 Schematic diagram of part of the structure;
[0034] Figure 3 For the present invention Figure 1 sectional view of
[0035] Figure 4 Schematic diagram of the structure of the motor in the present invention;
[0036] Figure 5 Schematic diagram of the structure of the outer ring of the spoiler ring in the present invention;
[0037] Figure 6 It is a structural schematic diagram of the inner ring of the spoiler ring in the present invention.
[0038] Legend: 1. Electroplating chamber; 2. Protective shell; 3. Motor; 4. Gear; 5. Outer ring of spoiler ring; 6. Inner ring of spoiler ring; 7. Snap-in groove; 8. High resistance plate; 9. Snap-in plate; 10. Protrusion; 11. Spoiler ring bracket; 12. Anode film; 13. Anode; 14. Liquid inlet; 15. Overflow weir; 16. Wafer plate; 17. Wafer bracket. DETAILED DESCRIPTION
[0039] Reference Figure 1-6As shown, the present invention provides a technical solution: a spoiler ring element for wafer electroplating, comprising an electroplating chamber 1, a protective shell 2 is installed on the surface of the electroplating chamber 1, a motor 3 is fixedly installed on the inner wall of the protective shell 2, the output end of the motor 3 is fixedly connected to a gear 4, a liquid inlet 14 is opened on the lower surface of the electroplating chamber 1, an anode 13 membrane 12 is fixedly installed on the surface of the electroplating chamber 1, a connecting block is fixedly installed on the surface of the anode 13 membrane 12, a high resistance plate 8 is fixedly installed on the surface of the connecting block, and a plurality of through holes are opened on the surface of the high resistance plate 8. The surface of the high resistance plate 8 is fixedly mounted with a spoiler ring bracket 11, the surface of the spoiler ring bracket 11 is fixedly mounted with a spoiler ring outer ring 5, the arc surface of the spoiler ring outer ring 5 is provided with teeth, the gear 4 is engaged with the teeth of the spoiler ring outer ring 5, the surface of the spoiler ring outer ring 5 is slidably mounted with a spoiler ring inner ring 6, the surfaces of the spoiler ring outer and inner rings are fixedly connected with a protrusion 10, the surface of the spoiler ring inner ring 6 is slidably connected with a wafer plate 16, the surface of the wafer plate 16 is fixedly mounted with a wafer bracket 17, and the surface of the electroplating chamber 1 is fixedly connected with an anode 13. The gear 4 is driven by the motor 3 to engage with the outer ring 5 of the spoiler ring with teeth, thereby driving the outer ring 5 of the spoiler ring to rotate. Cooperating with the inner ring 6 of the spoiler ring, the plating liquid around the wafer plate 16 can generate turbulence, making the plating liquid more evenly distributed, enhancing the metal ion mass transfer efficiency in the edge area, thereby improving the quality of wafer electroplating and solving the problem of voids in the electroplating layer. At the same time, the anode 13, membrane 12, connecting block and high resistance plate 8 and other components reasonably guide the current to ensure the stability of the electroplating process and improve the practicality of the device. A connecting groove is provided on the surface of the outer ring 5 of the spoiler ring, and a connecting block is slidably connected to the inner wall of the connecting groove, and the connecting block is fixedly connected to the inner ring 6 of the spoiler ring. By connecting the spoiler ring outer ring 5 with the spoiler ring inner ring 6, it is achieved that the spoiler ring inner ring 6 with different protrusions 10 can be easily replaced. On the one hand, the protrusion 10 can stir the electric liquid at the edge of the wafer, improve the edge flow field, strengthen the mass transfer of the plating solution components, and solve the problem of plating voids caused by the excessive thickness of the photoresist. On the other hand, it can shield part of the electric field at the edge of the wafer and offset the plating unevenness problem caused by the edge effect. The component of the anode 13 is a block solid of the metal to be electroplated. By setting the anode 13 to a block solid of the metal to be electroplated, as the electroplating process proceeds, the metal block of the anode 13 will dissolve in the electroplating solution to provide the metal ions required for electroplating. The interior of the electroplating chamber 1 is provided with an overflow weir 15, which is connected to the liquid inlet 14. By setting the overflow weir 15, the plating solution enters the anode 13 cavity from the bottom liquid inlet 14, the anode 13 passes through a layer of anode 13 membrane 12 and then enters the cathode cavity from the through hole of the high electric barrier plate, and finally flows out to the overflow weir 15 through the gap between the bottom of the wafer plate 16 and the upper surface of the inner ring 6 of the spoiler ring, and the electrolyte circulates into the liquid inlet 14. The inner ring 6 of the spoiler ring and the outer ring 5 of the spoiler ring are both made of one of the materials including but not limited to polytetrafluoroethylene, ceramic or special alloy.The corrosion-resistant effect is achieved, and the situation where the inner ring 6 and the outer ring 5 of the spoiler ring are corroded by the electroplating solution is avoided, thereby improving the practicality of the device. The motor 3 is a motor with a precisely adjustable speed. The rotation speed of the outer ring 5 of the spoiler ring can be flexibly adjusted according to different wafer electroplating process requirements, thereby improving the practicality of the device. The through-hole diameter of the high-resistance plate 8 is 0.3mm-0.8mm, and the through-holes are evenly distributed on the high-resistance plate 8 in a circular array. By setting the through-hole diameter of the high-resistance plate 8 to 0.3mm-0.8mm, the electroplating solution and metal ions are evenly attached to the wafer plate 16, thereby improving the practicality of the device. The resistance value of the high-resistance plate 8 ranges from 80 ohms to 230 ohms. By setting the resistance value of the high-resistance plate 8 to 80-230 ohms, it can be adjusted according to the process requirements of wafer electroplating, thereby improving the practicality of the device.
[0040] In the present invention, an electroplating process for a spoiler ring element for wafer electroplating according to any one of claims 1 to 8 comprises the following steps:
[0041] S1. Preparation: Check whether the components such as the electroplating chamber 1, protective shell 2, motor 3, gear 4, spoiler ring outer ring 5, spoiler ring inner ring 6, anode 13, anode film 12, high resistance plate 8 are intact and installed correctly; select the anode 13 with appropriate composition according to the material, size and electroplating process requirements of the wafer to be electroplated. If the metal to be plated is copper, select a copper block as the anode and install it on the electroplating chamber 1; adjust the speed of the motor 3 to make it consistent with the spoiler ring rotation speed required for this electroplating. The general speed range is set to 5-30 rpm.
[0042] S2. Plating solution treatment: Inject the prepared plating solution, such as the plating solution containing Cu2+, into the plating chamber 1 through the liquid inlet 14. The amount of plating solution injected must ensure that it can submerge the anode 13 and is within the liquid level range for normal operation of the overflow weir 15. Turn on the heating device of the electroplating equipment, control the plating solution temperature at 20-50°C, and turn on the stirring device, if any, to ensure uniform distribution of metal ions in the plating solution.
[0043] S3, electroplating process: start the motor 3, the motor 3 drives the gear 4 to rotate, driving the outer ring 5 of the spoiler ring and the inner ring 6 of the spoiler ring connected thereto to rotate synchronously, and the protrusion 10 on the spoiler ring stirs the plating solution around the wafer plate 16 to generate turbulence; turn on the power supply, so that the current passes through the plating solution between the anode 13 and the wafer plating surface 16 as the cathode, and start electroplating. During the electroplating process, the current density is controlled at 1-5A / dm 2 The electroplating time is determined according to the required coating thickness, generally 10-60 minutes.
[0044] S4. Post-plating treatment: After the electroplating is completed, turn off the power supply and the motor 3; discharge the plating liquid in the plating chamber 1 through the drain port, and clean the plating chamber 1, the spoiler ring outer ring 5, the spoiler ring inner ring 6, etc. The cleaning liquid can be deionized water and a special detergent. After cleaning, blow dry with dry nitrogen; take out the electroplated wafer 16 and perform a quality inspection on its surface coating. The inspection items include the uniformity of the coating thickness using an X-ray thickness gauge, requiring the deviation of the coating thickness between the edge and the center to be within ±5%, and the surface roughness using an atomic force microscope, and the surface roughness Ra must be less than 10nm.
[0045] In the present invention, in step S2, an additive of 0.1-0.5% by mass is added to the electroplating solution. The additive is an organic compound containing nitrogen and phosphorus elements, such as sodium ethylenediaminetetramethylenephosphonate EDTMPA-Na5, to enhance the dispersibility and stability of the electroplating solution and improve the quality of the coating. In step S3, the electroplating process is carried out under an inert gas atmosphere such as nitrogen. The inert gas flow rate is 5-10 L / min to reduce the oxidation of metal ions in the electroplating solution and ensure the electroplating effect.
[0046] Working principle: the plating solution flows into the liquid inlet 14 on the lower surface of the plating chamber 1, enters the anode 13 cavity through the overflow weir 15, and the anode 13 (a block of solid metal to be electroplated) is in the anode 13 cavity. Its metal dissolves in the plating solution to provide metal ions. After the plating solution passes through the anode 13 membrane 12, it enters the cathode cavity through the through holes with a diameter of 0.3mm-0.8mm, which are evenly distributed in a circular array on the high resistance plate 8. At this time, the motor 3 (the speed of which can be precisely adjusted) drives the gear 4 to rotate, meshing with the teeth on the spoiler ring outer ring 5, driving the spoiler ring outer ring 5 to rotate. The spoiler ring outer ring 5 is clamped to the spoiler ring inner ring 6 through the connecting groove and rotates together. The protrusions 10 on the outer and inner surfaces of the spoiler ring stir the plating solution around the wafer plate 16, generating turbulence, improving the flow field at the wafer edge, enhancing the mass transfer of plating solution components, and solving the problem of plating voids caused by excessive photoresist thickness. At the same time, it shields part of the electric field, offsets the unevenness of the plating layer caused by the edge effect, makes the plating solution more evenly distributed, and enhances the mass transfer efficiency of metal ions in the edge area. The plating solution finally flows out through the gap between the bottom of the wafer plate 16 and the upper surface of the spoiler ring inner ring 6 to the overflow weir 15, and is recirculated into the liquid inlet 14. Throughout the entire process, the anode 13, the membrane 12, the connecting block, and the high-resistance plate 8 with a resistance value of 80 ohms to 230 ohms rationally guide the current to ensure a stable electroplating process, thereby improving the quality of wafer electroplating.
[0047] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.
Claims
1. A spoiler ring element for wafer electroplating, comprising an electroplating chamber (1), characterized in that: The surface of the electroplating chamber (1) is provided with a protective shell (2), the inner wall of the protective shell (2) is fixedly provided with a motor (3), the output end of the motor (3) is fixedly connected with a gear (4), the lower surface of the electroplating chamber (1) is provided with a liquid inlet (14), the surface of the electroplating chamber (1) is fixedly provided with an anode (13) membrane (12), the surface of the anode (13) membrane (12) is fixedly provided with a connecting block, the surface of the connecting block is fixedly provided with a high resistance plate (8), the surface of the high resistance plate (8) is provided with a plurality of through holes, the surface of the high resistance plate (8) is fixedly provided with a flow disturbance device (14). A ring bracket (11) is provided, wherein a spoiler ring outer ring (5) is fixedly mounted on the surface of the spoiler ring bracket (11), a circular arc surface of the spoiler ring outer ring (5) is provided with teeth, the gear (4) is meshed with the teeth of the spoiler ring outer ring (5), a spoiler ring inner ring (6) is slidably mounted on the surface of the spoiler ring outer ring (5), a protrusion (10) is fixedly connected to the surfaces of the spoiler ring outer and inner rings, a wafer plate (16) is slidably connected to the surface of the spoiler ring inner ring (6), a wafer bracket (17) is fixedly mounted on the surface of the wafer plate (16), and an anode (13) is fixedly connected to the surface of the electroplating chamber (1).
2. The spoiler ring element for wafer electroplating according to claim 1, characterized in that: A connection groove is provided on the surface of the spoiler ring outer ring (5), and a connection block is slidably connected to the inner wall of the connection groove, and the connection block is fixedly connected to the spoiler ring inner ring (6).
3. The spoiler ring element for wafer electroplating according to claim 1, characterized in that: The anode (13) is composed of a bulk solid of the metal to be electroplated.
4. The spoiler ring element for wafer electroplating according to claim 1, characterized in that: An overflow weir (15) is provided inside the electroplating chamber (1), and the overflow weir (15) is communicated with the liquid inlet (14).
5. The spoiler ring element for wafer electroplating according to claim 1, characterized in that: The inner ring (6) and the outer ring (5) of the spoiler ring are both made of one of materials including but not limited to polytetrafluoroethylene, ceramics or special alloy materials.
6. The spoiler ring element for wafer electroplating according to claim 1, characterized in that: The electric motor (3) is a motor whose rotation speed can be precisely adjusted.
7. The spoiler ring element for wafer electroplating according to claim 1, characterized in that: The through holes of the high resistance plate (8) have a diameter of 0.3 mm to 0.8 mm, and the through holes are evenly distributed on the high resistance plate (8) in a circular array.
8. The spoiler ring element for wafer electroplating according to claim 1, characterized in that: The resistance value of the high resistance plate (8) ranges from 80 ohms to 230 ohms.
9. An electroplating process for a spoiler ring element for wafer electroplating according to any one of claims 1 to 8, characterized in that: The following steps are involved: S1. Preparation: Check whether the electroplating chamber (1), protective shell (2), motor (3), gear (4), spoiler ring outer ring (5), spoiler ring inner ring (6), anode (13), anode film (12), and high resistance plate (8) are intact and correctly installed; select the anode (13) according to the material, size and electroplating process requirements of the wafer to be electroplated. If the metal to be plated is copper, select a copper block as the anode and install it on the electroplating chamber (1); adjust the speed of the motor (3) to make it meet the spoiler ring rotation speed required for this electroplating, and set the speed range to 5-30 rpm; S2. Plating solution treatment: inject the prepared Cu2+-containing plating solution into the plating chamber (1) through the liquid inlet (14). The amount of plating solution injected must ensure that the anode (13) is submerged and the liquid level of the overflow weir (15) is within the normal working range. Turn on the heating device of the electroplating equipment to control the plating solution temperature at 20-50°C. At the same time, turn on the stirring device to ensure that the metal ions in the plating solution are evenly distributed. S3, electroplating process: starting the motor (3), the motor (3) drives the gear (4) to rotate, driving the outer ring of the spoiler ring (5) and the inner ring of the spoiler ring (6) connected thereto to rotate synchronously, and the protrusion (10) on the spoiler ring stirs the electroplating solution around the wafer plate (16) to generate turbulence; turning on the power supply, so that the current passes through the electroplating solution between the anode (13) and the electroplating surface of the wafer, and electroplating begins, wherein the wafer plate (16) serves as the cathode, and the current density during the electroplating process is controlled at 1-5A / dm 2 , the electroplating time is determined according to the required coating thickness; S4, electroplating post-processing: After the electroplating is completed, turn off the power supply and the motor (3); discharge the electroplating liquid in the electroplating chamber (1) through the drain port, and clean the electroplating chamber (1), the outer ring of the spoiler ring (5), and the inner ring of the spoiler ring (6). Deionized water and detergent are used as the cleaning liquid, and the cleaning is blown dry with dry nitrogen after cleaning; take out the electroplated wafer (16), and perform a quality inspection on the surface coating. The inspection items include the uniformity of the coating thickness and the surface roughness.
10. The electroplating process of the spoiler ring element for wafer electroplating according to claim 9, characterized in that: In step S2, an additive with a mass fraction of 0.1-0.5% is added to the electroplating solution, wherein the additive is an organic compound containing nitrogen and phosphorus elements, including sodium ethylenediaminetetramethylenephosphonate; in step S3, the electroplating process is carried out under an inert gas atmosphere, and the inert gas flow rate is 5-10 L / min.