Semiconductor package, temperature measuring structure thereof, temperature measuring device and chip

Abstract

The invention provides a semiconductor package, a temperature measurement structure thereof, a temperature measurement device and a chip, the semiconductor package comprises a plurality of redistribution layers RDL, each redistribution layer RDL corresponds to a different temperature measurement area, the temperature measurement structure comprises a plurality of temperature measurement package units, and the temperature measurement package units are connected with the redistribution layers RDL. Each temperature measurement packaging unit is correspondingly arranged in one temperature measurement area; the temperature measurement packaging unit comprises a thermal resistance temperature sensor; or comprises a thermal resistance temperature sensor and a heater; wherein the thermal resistance temperature sensor is formed on the basis that a metal wire made of a single metal material is arranged in a preset shape; the thermal resistance temperature sensor is used for collecting an actual temperature value corresponding to a semiconductor PN junction in the preset measurement area. According to the invention, the temperature measurement structure is arranged in the rewiring layer, so that the junction temperature of the semiconductor can be measured efficiently and precisely, and the method has the advantages of reducing the manufacturing cost, reducing the process complexity and the like.

Description

Technical Field

[0001] The present disclosure relates to the technical field of semiconductor product design, and in particular to a semiconductor package and a temperature measurement structure thereof, a temperature measurement device, and a chip. Background Art

[0002] The semiconductor die is composed of internal CMOS (Complementary Metal Oxide Semiconductor) and metal layer connections. The power consumption of CMOS during operation includes static power consumption and dynamic power consumption: static power consumption is also called leakage current power consumption, which is generated when the power is turned on; dynamic power consumption is generated when the CMOS is constantly flipped during operation, specifically including flip power consumption and short-circuit power consumption. When the metal layer is powered on, Joule heat is generated, but the proportion is very small. The power consumption in the above semiconductor die is converted into thermal energy of the material, causing the temperature of the semiconductor device to rise. In order to ensure that the semiconductor device is in a high-performance working state with high reliability and stability, the temperature of the semiconductor must be monitored in real time, usually called the junction temperature (Tj), to obtain the temperature of the semiconductor and adjust it in real time.

[0003] A common method for measuring junction temperature is to place a temperature measurement Thermal Intellectual Property (IP) at the desired temperature location on the CMOS inside the die. The temperature is sensed using the temperature sensor carried by the Thermal IP. The temperature sensor is a CMOS device that measures temperature by measuring the relationship between its output voltage and temperature. However, this temperature measurement solution has drawbacks such as inability to accurately measure semiconductor temperature and complex production processes. Summary of the Invention

[0004] The technical problem to be solved by the present disclosure is to overcome the above-mentioned defects in the prior art and to provide a semiconductor package and its temperature measurement structure, a temperature measurement device and a chip.

[0005] The present disclosure solves the above technical problems through the following technical solutions:

[0006] In a first aspect of the present disclosure, a temperature measurement structure in a semiconductor package is provided. The semiconductor package includes several layers of redistribution layers (RDLs), each layer of the RDLs corresponding to a different temperature measurement region. The temperature measurement structure includes several temperature measurement package units, each of the temperature measurement package units being disposed in a corresponding temperature measurement region.

[0007] The temperature measurement package unit includes a thermal resistance temperature sensor; or includes a thermal resistance temperature sensor and a heater; wherein the thermal resistance temperature sensor is formed based on a metal wire cloth of a single metal material and is set to a preset shape;

[0008] The thermistor temperature sensor is used to collect the actual temperature value corresponding to the semiconductor PN junction (PN junction, a P-type semiconductor and an N-type semiconductor are made on the same semiconductor substrate through processes such as epitaxy, dopant diffusion or ion implantation. The boundary or interface between these two semiconductor materials is called a PN junction) at the preset measurement area.

[0009] Optionally, the redistribution layer RDL where the thermal resistance temperature sensor is located is interconnected with solder balls or bumps in the semiconductor package;

[0010] Alternatively, the redistribution layer RDL where the thermal resistance temperature sensor is located is electrically connected to a substrate connected to a bump or a PCB (printed circuit board) connected to a solder ball in the semiconductor package.

[0011] Optionally, a redistribution layer (RDL) in the semiconductor package is selected, and a routing of the thermal resistor temperature sensor is arranged based on the positions of any two solder balls in the temperature measurement area, adopts the preset shape, avoids the area where the solder balls are located, and is electrically connected to the corresponding two solder balls;

[0012] Select two or more layers of the redistribution layer RDL in the semiconductor package, and the routing of the thermistor temperature sensor in one layer of the redistribution layer RDL does not need to avoid the area where the solder balls are located and is electrically connected to the corresponding two solder balls, while avoiding the contact settings of other preset functional circuits on the die; the routing of the other layers of the redistribution layer RDL is arranged based on the functional requirements of the other preset functional circuits.

[0013] Optionally, the routing of the thermistor temperature sensor is based on any two of the bumps in the temperature measurement area, is set in the preset shape, and is arbitrarily set in an area other than the contacts of other preset functional circuits on its die, and is electrically connected to the corresponding two bumps.

[0014] Optionally, a redistribution layer (RDL) in the semiconductor package is selected, and the heater is arranged in an area of the temperature measurement area except for a wiring area of the thermal resistance temperature sensor;

[0015] Selecting two or more redistribution layers (RDL) in the semiconductor package, wherein the heater is provided on other redistribution layers (RDL) other than the RDL where the thermal resistor temperature sensor is located;

[0016] Wherein, the wiring of the thermal resistance temperature sensor is arranged in the preset shape based on the positions of any two solder balls in the temperature measurement area, and is electrically connected to the corresponding two solder balls;

[0017] The wiring of the thermal resistance temperature sensor is arranged in the preset shape based on the positions of any two of the bumps in the temperature measurement area, and is electrically connected to the corresponding two bumps.

[0018] Optionally, when the thermistor temperature sensor is connected to the bump, the area where the thermistor temperature sensor is located is located in the central area of the temperature measurement area, and the heater is arranged in an area outside the central area using a preset routing method.

[0019] Optionally, the wiring of the heater and / or thermistor temperature sensor is arranged in a uniform wiring manner;

[0020] And / or, the preset routing mode includes a zigzag routing mode or a spiral routing mode;

[0021] The heater is electrically connected to any other two solder balls in the temperature measurement area; or, the heater is electrically connected to any other two bumps in the temperature measurement area.

[0022] Optionally, the preset related parameters of different temperature measurement areas on the same redistribution layer RDL are all the same, all different, or partially the same and partially different;

[0023] The preset related parameters include at least one of the sizes of the different temperature measurement areas, the shapes of the traces within the temperature measurement areas, the length of the traces, and the spacing between the traces.

[0024] Optionally, the metal wire of a single metal material includes copper, platinum or nickel.

[0025] Optionally, the material of the metal wire of the single metal material is copper, and a preset copper RDL processing process is used to process the temperature measurement structure;

[0026] The material of the metal wire of a single metal material is platinum or nickel. For any layer of the redistribution layer RDL, the temperature measurement area of the current redistribution layer RDL is plated with platinum or nickel, and at the same time, other areas of the current redistribution layer RDL are blocked; and, other areas of the current redistribution layer RDL are plated with copper, and at the same time, the temperature measurement area of the current redistribution layer RDL is blocked to complete the processing of the temperature measurement structure.

[0027] Optionally, the semiconductor package is a wafer-level chip scale package or a wafer-level package, and the thermal resistor temperature sensor is interconnected with the solder ball;

[0028] The semiconductor package is a flip chip package, and the thermal resistor temperature sensor is interconnected with the bump.

[0029] According to a second aspect of the present disclosure, a semiconductor package is provided. The semiconductor package includes the temperature measurement structure in the semiconductor package according to the first aspect.

[0030] In a third aspect of the present disclosure, a temperature measurement device is provided, comprising the semiconductor package according to the second aspect, and a data acquisition instrument; wherein leads at both ends of the thermal resistor temperature sensor in the semiconductor package are electrically connected to the data acquisition instrument according to the requirements of the two-wire method, the three-wire method, or the four-wire method;

[0031] Alternatively, the temperature measuring device includes the semiconductor package as described in the second aspect, as well as a substrate, solder balls and a PCB, the substrate and / or the PCB containing auxiliary measurement elements, the leads at both ends of the thermistor temperature sensor in the semiconductor package are routed within the substrate and / or the PCB according to the two-wire method, three-wire method or four-wire method measurement requirements, and the corresponding auxiliary measurement elements are attached using the SMT process.

[0032] In a fourth aspect of the present disclosure, a chip is provided, comprising the temperature measurement structure in the semiconductor package as described in the first aspect. Based on the common sense in the art, the above-mentioned preferred conditions can be arbitrarily combined to obtain preferred embodiments of the present disclosure.

[0033] The positive progress of this disclosure is:

[0034] In the present disclosure, a temperature measurement structure is set in the redistribution layer (RDL) of the die in a semiconductor package. The temperature measurement structure uses a thermal resistor circuit formed of a single metal material, such as copper, platinum, or nickel, to achieve high-precision and efficient measurement of the actual temperature of the semiconductor PN junction, effectively improving the measurement accuracy and reliability. At the same time, the temperature measurement structure is formed based on a metal wire of a single metal material, which can effectively control the uniformity of the circuit material, ensure the feasibility of the preparation of the temperature measurement structure and the product quality, and effectively solve the problems of high manufacturing cost, large temperature measurement deviation, and complex process of the temperature measurement equipment set in the die in the prior art.

[0035] In addition, the semiconductor packaging and implementation process proposed in the present disclosure, which sets a temperature measurement structure in the redistribution layer, has the effect of measuring the semiconductor junction temperature at an extremely low cost compared to the semiconductor temperature measurement structure implemented by the wafer lithography process, and can be used in application fields such as mass production chips and imitation chips for thermal testing. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 Schematic diagram of the temperature measurement structure in the semiconductor package in Embodiment 1 of the present disclosure;

[0037] Figure 2 This is a typical wiring diagram of the thermal resistance temperature sensor in Example 1 of the present disclosure;

[0038] Figure 3 Schematic diagram of a single-layer redistribution layer (RDL) routing (connected to solder balls) of a temperature measurement package unit without a heating function in Example 2 of the present disclosure;

[0039] Figure 4 A schematic diagram of two-layer redistribution layer (RDL) routing of a temperature measurement package unit without a heating function in Example 2 of the present disclosure;

[0040] Figure 5 Schematic diagram of a single-layer redistribution layer (RDL) routing (connected to the bump) of a temperature measurement package unit without a heating function in Example 2 of the present disclosure;

[0041] Figure 6 Schematic diagram of a single-layer redistribution layer (RDL) routing (connected to solder balls) of a temperature measurement package unit with a heating function in Example 2 of the present disclosure;

[0042] Figure 7 Schematic diagram of a single-layer redistribution layer (RDL) routing (connected to the bump) of a temperature measurement package unit with a heating function in Example 2 of the present disclosure;

[0043] Figure 8 Schematic diagram of two layers of redistribution layer (RDL) routing (connected to solder balls) of a temperature measurement package unit with a heating function in Example 2 of the present disclosure;

[0044] Figure 9 Schematic diagram of two layers of redistribution layer (RDL) routing (connected to bumps) of a temperature measurement package unit with a heating function in Example 2 of the present disclosure;

[0045] Figure 10 Schematic diagram of a heater using a spiral wiring method in Example 2 of the present disclosure;

[0046] Figure 11 Schematic diagram of different temperature measurement area combinations of the redistribution layer RDL in Example 2 of the present disclosure;

[0047] Figure 12 This is a process flow chart of a single-layer redistribution layer RDL having only platinum and nickel thermal resistors in Example 2 of the present disclosure;

[0048] Figure 13This is a process flow chart for processing a single-layer redistribution layer RDL having platinum and nickel thermal resistors and copper traces in Example 2 of the present disclosure;

[0049] Figure 14 Schematic diagram of the connection between the redistribution layer RDL and the bump in Example 4 of the present disclosure;

[0050] Figure 15 Schematic diagram of the connection between the redistribution layer RDL and the solder balls in Example 4 of the present disclosure. DETAILED DESCRIPTION

[0051] The present disclosure is further illustrated below by way of examples, but the present disclosure is not limited to the scope of the examples.

[0052] In the embodiments of the present disclosure, prefixes such as "first" and "second" are used only to distinguish different description objects, and have no limiting effect on the position, order, priority, quantity or content of the described objects. In the embodiments of the present disclosure, the use of prefixes such as ordinal numbers to distinguish description objects does not constitute a limitation on the described objects. For the statement of the described objects, please refer to the description in the context of the claims or embodiments, and no unnecessary limitations should be constituted due to the use of such prefixes. In addition, in the description of this embodiment, unless otherwise specified, the meaning of "plurality" is two or more.

[0053] Example 1

[0054] Semiconductor packaging generally includes a die, a redistribution layer (RDL), an intrinsic semiconductor layer (PI), an under-bump metallization layer (UBM), etc.

[0055] The semiconductor package includes several layers of redistribution layers (RDLs), each corresponding to a different temperature measurement area. Generally, one or two RDL layers are selected based on actual needs, though three or more RDL layers can also be used as needed.

[0056] like Figure 1 As shown, the temperature measurement structure in the semiconductor package of this embodiment includes a plurality of temperature measurement package units 1, and each temperature measurement package unit 1 is correspondingly arranged in a temperature measurement area;

[0057] The temperature measurement package unit 1 includes a thermal resistance temperature sensor 2; or includes a thermal resistance temperature sensor 2 and a heater 3;

[0058] Among them, when the temperature measurement packaging unit 1 includes the thermal resistor temperature sensor 2, it is an RDL thermal resistor temperature measurement packaging structure without heating function; when the temperature measurement packaging unit 1 includes the thermal resistor temperature sensor 2 and the heater 3, it is an RDL thermal resistor temperature measurement packaging structure with heating function.

[0059] Thermistor temperature sensor 2 is formed by a single metal wire arranged in a predetermined shape. Specifically, the single metal wire is preferably made of copper, platinum, or nickel. Thermistor temperature sensor 2 is used to collect the actual temperature corresponding to the semiconductor PN junction at a predetermined measurement area.

[0060] A certain redistribution layer RDL is selected, and a specific area in the redistribution layer RDL is selected as a temperature measurement area according to actual needs, and a thermal resistor temperature sensor 2 is set in the temperature measurement area.

[0061] The shape of the corresponding metal wire of the thermistor temperature sensor 2 is not limited, and it is preferred to occupy a smaller routing area and have a sufficient resistance size; when selecting the redistribution layer RDL, it is preferred to select a redistribution layer RDL that is close to the die and close to the die in the thickness direction, so that the measured temperature value is closer to the temperature of the semiconductor PN junction itself, thereby ensuring the accuracy of the measurement.

[0062] Specifically, for RTD temperature sensor 2, a shorter trace area helps reserve more space for RDL interconnects, facilitating overall design. A longer trace area provides sufficient resistance, facilitating subsequent resistance measurement. These two points conflict with each other, and a balanced approach is recommended in practical designs.

[0063] like Figure 2 As shown in the figure, five typical preferred routing forms are given as examples: Figure 2 The thermal resistor corresponding to part a in the figure is the shortest copper resistor trace, which only occupies the area between the two contacts (pads), taking up the smallest trace space but also having the smallest resistance value. Figure 2 Part b in the figure occupies the upper area between the two contact pads, which increases the trace space and the resistance value. Figure 2 Part c occupies the area between the two contact pads, further increasing the trace space and the resistance value. Figure 2 Part d occupies more than two contact pads, including the upper area around them. The trace space is larger than that of part b, and the resistance value is also larger than that of part b. Figure 2 The "e" portion occupies an area larger than the two contact pads, including the periphery, and has the largest routing space and the largest resistance value.

[0064] The above are typical preferred routing forms, but are not limited to the above 5 types. Thermistor temperature sensor 2 can also have many other shapes, which are not described here; each of the above thermistor temperature sensor 2 corresponds to a temperature measurement package unit 1, and multiple temperature measurement package units 1 can be arranged on the same layer of redistribution layer RDL. The positions and routings of different temperature sensors can be different, and can be flexibly set or adjusted according to specific needs to meet the temperature measurement needs of various actual scenarios.

[0065] In this embodiment, a temperature measurement structure is provided within the redistribution layer (RDL) of the die in a semiconductor package. The temperature measurement structure uses a thermal resistor circuit formed of a single metal material, such as copper, platinum, or nickel, to achieve high-precision and efficient measurement of the actual temperature of the semiconductor PN junction, effectively improving measurement accuracy and reliability. At the same time, the temperature measurement structure is formed based on a metal wire of a single metal material, which can effectively control the uniformity of the circuit material, ensure the feasibility of the preparation of the temperature measurement structure and ensure product quality, and effectively solve the problems of high manufacturing cost, large temperature measurement deviation, and complex process of the temperature measurement equipment provided in the die in the prior art.

[0066] In addition, the semiconductor packaging and implementation process proposed in the present disclosure, which sets a temperature measurement structure in the redistribution layer, has the effect of measuring the semiconductor junction temperature at an extremely low cost compared to the semiconductor temperature measurement structure implemented by the wafer lithography process, and can be used in application fields such as mass production chips and imitation chips for thermal testing.

[0067] Example 2

[0068] The temperature measurement structure in the semiconductor package of this embodiment is a further improvement of the embodiment 1. Specifically:

[0069] In one feasible solution, the redistribution layer (RDL) where the thermal resistor temperature sensor 2 is located is interconnected with solder balls or bumps in the semiconductor package.

[0070] The semiconductor package is a wafer level chip scale package (WLCSP) or a fan-out wafer-level packaging (FOWLP), and the thermal resistor temperature sensor 2 is interconnected with the solder ball.

[0071] The semiconductor package is a flip chip package (Flip Chip) or the like, and the thermal resistor temperature sensor 2 is interconnected with the bump.

[0072] In the present disclosure, an adaptive interconnection method is adopted for the thermal resistor temperature sensor 2 for different packages to ensure the feasibility of the temperature measurement structure and meet the design requirements of the temperature measurement packaging structure of the corresponding semiconductor package.

[0073] In one feasible solution, the redistribution layer RDL where the thermal resistor temperature sensor 2 is located is electrically connected to the substrate connected to the bump or the PCB connected to the solder ball in the semiconductor package.

[0074] In the present disclosure, the thermal resistor temperature sensor 2 is interconnected in a substrate connected to the bump or in a PCB connected to the solder ball, so that a normalized RDL design is adopted to realize different heating and temperature measurement functions.

[0075] In one feasible solution, a redistribution layer (RDL) in a semiconductor package is selected, and the routing of the thermal resistor temperature sensor 2 is based on the positions of any two solder balls in a temperature measurement area, adopts a preset shape, avoids the area where the solder balls are located, and is electrically connected to the corresponding two solder balls;

[0076] Select two or more redistribution layers RDL in the semiconductor package, and the routing of the thermistor temperature sensor 2 in one of the redistribution layers RDL does not need to avoid the area where the solder balls are located and is electrically connected to the corresponding two solder balls, while avoiding the contact settings of other preset functional circuits on the die; the routing of the redistribution layers RDL of other layers is arranged based on the functional requirements of other preset functional circuits.

[0077] When more than two redistribution layers (RDL) are selected, the thermal resistor temperature sensor 2 is arranged on the RDL close to the die Die.

[0078] For example, one or two layers of redistribution layer RDL routing can be selected according to actual needs, such as Figure 3 As shown, there is only one redistribution layer (RDL) trace, and the thermal resistor formed by the redistribution layer (RDL) is connected to the solder ball area. Figure 4 The first layer of RDL routing does not need to avoid the solder ball area, allowing for more freedom in designing the thermal resistor trace length and shape. However, it should appropriately avoid the connection pads on the die used for other circuit functions such as signals and power. The second layer of RDL routing is used for routing connections for other circuit functions such as signals and power. The two-layer RDL routing is generally used for mass production packaging, where other functional circuits are included in the die.

[0079] In this disclosure, for one or more redistribution layers (RDLs), to meet wafer-level chip-scale packaging (CSP) or wafer-level packaging requirements, thermistor temperature sensors 2 are interconnected with solder balls to form corresponding temperature measurement units, ensuring the accuracy, stability, and reliability of temperature detection within the temperature measurement area. In one embodiment, the routing of thermistor temperature sensors 2 is based on any two bumps within the temperature measurement area, adopting a predetermined shape, and is randomly arranged in an area other than the contacts of other predetermined functional circuits on the die, and is electrically connected to the corresponding two bumps.

[0080] For example, one or two layers of redistribution layer RDL routing can be selected according to actual needs, such as Figure 5 As shown, since the bump is small (47-70um), which is comparable to the line width of the redistribution layer RDL (13um), the thermal resistor connection line formed by the redistribution layer RDL can be routed more freely without affecting the connection of other circuit functions, and finally led out from the corresponding bump position.

[0081] In the present disclosure, for one or more redistribution layers (RDL), in order to meet the requirements of flip-chip packaging, the thermal resistor temperature sensor 2 is interconnected with the bump to form a corresponding temperature measurement unit, thereby ensuring the accuracy, stability and reliability of temperature detection within the temperature measurement area.

[0082] In one feasible solution, a redistribution layer (RDL) in a semiconductor package is selected, and the heater 3 is arranged in a temperature measurement area except for a wiring area of the thermal resistor temperature sensor 2 ;

[0083] Selecting two or more redistribution layers RDL in the semiconductor package, the heater 3 is arranged on other redistribution layers RDL except the redistribution layer RDL where the thermal resistor temperature sensor 2 is located;

[0084] The wiring of the thermal resistor temperature sensor 2 is arranged in a preset shape based on the positions of any two solder balls in the temperature measurement area and is electrically connected to the corresponding two solder balls;

[0085] The wiring of the thermal resistor temperature sensor 2 is arranged in a preset shape based on the positions of any two bumps in the temperature measurement area, and is electrically connected to the corresponding two bumps.

[0086] The heater 3 is electrically connected to any other two solder balls in the temperature measurement area; or, any other two bumps in the temperature measurement area are electrically connected.

[0087] In the present disclosure, a redistribution layer RDL is selected in the semiconductor package, and the heater 3 is arranged in the temperature measurement area except the routing area of the thermistor temperature sensor 2. Two or more redistribution layers RDL are selected in the semiconductor package, and the heater 3 is arranged on other redistribution layers RDL except the redistribution layer RDL where the thermistor temperature sensor 2 is located. In this way, the thermistor temperature sensor 2 and the heater 3 do not affect each other, and both are flexibly arranged. The thermistor temperature sensor 2 has more routing space to obtain a suitable resistance value, which can achieve a more accurate temperature measurement effect.

[0088] In one feasible solution, when the thermistor temperature sensor 2 is connected to the bump, the area where the thermistor temperature sensor 2 is located is located in the center area of the temperature measurement area, and the heater 3 is arranged in an area outside the center area using a preset routing method.

[0089] In one feasible solution, the wiring of the heater 3 and / or the thermal resistance temperature sensor 2 is arranged in a uniform wiring manner;

[0090] In an implementable solution, the preset routing mode includes a zigzag routing mode or a spiral routing mode;

[0091] In one feasible solution, the preset related parameters of different temperature measurement areas on the same redistribution layer RDL are all the same, all different, or partially the same and partially different;

[0092] The preset related parameters include the size of different temperature measurement areas, the shape of the traces within the temperature measurement areas, the length of the traces, the spacing between the traces, etc.

[0093] Among them, in this embodiment, in addition to including temperature measurement units of different sizes and wiring methods, the same redistribution layer RDL can also correspond to both temperature measurement units without heating function and temperature measurement units with heating function; each temperature measurement unit is independently set to complete temperature detection at the corresponding position.

[0094] For the RDL thermistor temperature measurement package structure with heating function, the redistribution layer RDL includes the thermistor temperature sensor 2 and the heater 3, that is, the redistribution layer RDL has a heating function, and the general die is a replica die for thermal testing; in this case, the thermistor temperature sensor 2 is the same as the above, because it is a replica die, and the replica die does not have a functional circuit, so in this case there is no circuit routing from the die to the connection contact pad, and all circuit routing ends start from the redistribution layer RDL. The routing in the redistribution layer RDL is not affected by the routing in the die, and has a higher degree of freedom. The wiring method of the thermistor temperature sensor 2 and the heater 3 is more flexible to meet higher-demand actual temperature measurement scenarios.

[0095] like Figure 6 As shown, the left side is an overall schematic diagram of the interconnection between the thermal resistor temperature sensor 2 and the solder ball in the temperature measurement structure, and the right side is a local enlarged view of the marked part on the left side.

[0096] Specifically, Figure 6 The temperature measurement area where each temperature measurement package unit 1 is located is the area where the four solder balls are located; each temperature measurement package unit 1 includes two parts: a thermal resistor temperature sensor and a heater. The metal wire connecting line that constitutes the thermal resistor temperature sensor is distributed between the two solder balls, such as Figure 6 The connecting line between the two triangles in the first row; the heater 3 is also composed of RDL metal wire connecting lines, which are arranged in the area outside the thermal resistor temperature sensor in the temperature measurement package unit 1. A denser routing is used to distribute it over as wide an area as possible to ensure that the heater 3 has sufficient resistance and avoid temperature unevenness caused by the design of the heater 3 itself.

[0097] like Figure 7 As shown, the left side is an overall schematic diagram of the interconnection between the thermal resistor temperature sensor 2 and the bump in the temperature measurement structure, and the right side is a local enlarged view of the marked part on the left side.

[0098] Specifically, if Figure 7 As shown, each temperature measurement package unit 1 includes a thermal resistor temperature sensor and a heater. The redistribution layer (RDL) traces of each temperature measurement package unit 1 are led out from the bumps and continue to connect to the circuit of the substrate. Since each temperature measurement package unit 1 has an area corresponding to four solder balls but has a sufficient number of bumps, appropriate bumps can be selected for leading out the connection lines. Figure 7 The solder balls in the figure represent the size of the temperature measurement area. The temperature measurement package unit 1 is not directly connected to the solder balls. Each temperature measurement package unit 1 contains a large number of bumps. For clarity, only four bumps are shown for leading out the redistribution layer (RDL) connection lines. In the scheme where the redistribution layer (RDL) is connected to the bumps, the thermistor temperature sensor 2 can be positioned in the center of the temperature measurement area, between two bumps, or it can be positioned in a wider area, depending on actual needs. The remaining area is used to set up a heater 3 composed of zigzag metal wires. The routing of heater 3 is also set to a denser routing to achieve greater resistance and heating power, while covering a wider range to achieve uniform heating and avoid uneven temperature distribution.

[0099] The thermal resistance temperature sensor 2 and the heater 3 of the same temperature measurement package unit 1 can be arranged on the same redistribution layer RDL. Figure 6-7As shown, it can also be arranged in different redistribution layers RDL, specifically as Figure 8-9 As shown, Figure 8 The temperature measurement structure of the multi-layer redistribution layer RDL under the condition of interconnection with the solder ball is shown in the figure. Figure 9 It is a temperature measurement structure of the redistribution layer (RDL) interconnected with the bump.

[0100] Figure 8 and Figure 9 The left side of the figure corresponds to the heating layer (i.e., heater 3). Figure 8 and Figure 9 The right side of the figure shows the thermal resistor temperature sensing layer (the dotted line is the projection of the heating layer). When two RDL layers are used, the heating layer can be evenly distributed throughout the temperature measurement area, achieving uniform heating. Figure 9 When the temperature measurement structure is interconnected with the bump, the lead position is free, so the thermistor temperature sensor 2 can be located in the center of the temperature measurement area, which has certain advantages from the perspective of temperature measurement; when arranged on different redistribution layers RDL, the thermistor temperature sensor 2 has more routing space to obtain a suitable resistance value without affecting the wiring design of the heater 3; preferably, the thermistor temperature sensor 2 is arranged on the redistribution layer RDL close to the die.

[0101] For the case of interconnection with the bump, the heater 3 is used in addition to the following Figure 9 The broken line routing method shown in the figure can also be used as Figure 10 The spiral routing is shown.

[0102] In addition, the thermistor temperature sensor 2 and the heater 3 can be arranged in a unit type, and each temperature measurement unit includes at least one thermistor temperature sensor 2 and at least one heater 3. The temperature measurement area of each temperature measurement unit can be set to different sizes according to actual needs. Multiple identical temperature measurement units are arranged in sequence in the redistribution layer RDL, and the heaters 3 between different temperature measurement units are connected. This can be implemented in the redistribution layer RDL without temperature measurement and heating units to simulate different heat source arrangements.

[0103] like Figure 11 As shown, Ain and Aout are the current import and export of area A, Bin and Bout are the current import and export of area B, Figure 11 The left side of the figure is composed of a mixture of 2*2 and 3*3 solder ball sized temperature measurement units, and area 1 is composed of 2*2 temperature measurement units (corresponding to Figure 11 The lower right corner of the figure), the 2nd area is composed of a mixture of 2*2 temperature measurement units and 3*3 temperature measurement units (corresponding to Figure 11(Figure in the upper right corner of the middle), the lines in the figure can be used to achieve zoned uniform heating and temperature measurement of the two IP areas 1 and 2; if some areas do not generate heat, the temperature measurement unit can be omitted, that is, the corresponding temperature measurement area is vacant.

[0104] In the present disclosure, all the above redistribution layer RDL routing can be designed according to actual needs in terms of routing length, spacing, shape, etc. to meet different testing requirements, as long as it complies with the package design rules.

[0105] In addition, the thermal resistance temperature sensor 2 and the heater 3 of the temperature measuring unit may not be used as Figure 11 Instead of the unit arrangement plus combination shown in the figure, the heating areas are directly divided in the redistribution layer RDL, and then a group of heaters 3 plus temperature sensors are freely set in each heating area. The shape and size of each area are different, and the routing can also be completely different. Such a targeted design can directly meet the requirements of specific IP shape and size. Under this design method, other IPs need to be redesigned.

[0106] In one feasible solution, the material of the metal wire of the single metal material is copper, and the temperature measurement structure is processed using a preset copper RDL processing technology;

[0107] The material of the metal wire of a single metal material is platinum or nickel. For any layer of redistribution layer RDL, the temperature measurement area of the current redistribution layer RDL is plated with platinum or nickel, and at the same time, other areas of the current redistribution layer RDL are blocked; and, other areas of the current redistribution layer RDL are plated with copper, and at the same time, the temperature measurement area of the current redistribution layer RDL is blocked to complete the processing of the temperature measurement structure.

[0108] Specifically, when the redistribution layer RDL uses copper thermal resistors, since the material of the thermal resistors is consistent with the material of other circuits in the redistribution layer RDL, they can be treated as ordinary copper traces. The processing technology of the redistribution layer RDL is consistent with the current copper RDL processing technology and will not be repeated here.

[0109] When the RDL layer uses platinum or nickel thermal resistors, the processing technology is different from the existing copper RDL process, including two cases: (1) a single-layer RDL layer has only platinum or nickel thermal resistors; (2) a single-layer RDL layer has platinum or nickel thermal resistors and copper traces;

[0110] like Figure 12 As shown in the figure, the processing flow for a single-layer redistribution layer RDL with only platinum and nickel thermal resistors is as follows:

[0111] 1) Inspect the incoming Dummywafer to confirm that there are no abnormalities; 2) Pre-treat the incoming material; 3) Clean again; 4) Make the PI1 layer; 5a) Sputter the platinum / nickel seed layer; 5b) Apply photoresist; 5c) Expose; 5d) Develop to form a platinum / nickel resistor pattern; 5e) Electroplating pretreatment; 5f) Platinum / nickel electroplating; 5g) Photoresist stripping; 5h) Seed layer etching; 6) Make the PI2 layer. After the PI2 opening is completed, the copper RDL of other layers is produced: 7a) a layer of 0.1um titanium and about 0.5um seed copper is sputtered by physical vapor deposition; 7b) photoresist is applied; 7c) exposure; 7d) development forms the RDL pattern; 7e) electroplating pretreatment; 7f) then the entire wafer is electroplated with copper, the plating thickness is generally about 5um; 7g) photoresist is removed; 7h) RDL etching is carried out to remove excess titanium and copper; followed by 8) PI3 production, 9) UBM production; 10) ball planting, 11) final inspection and 12) shipment.

[0112] like Figure 13 As shown, the processing flow for a single-layer redistribution layer RDL with platinum, nickel thermal resistors and copper traces is as follows:

[0113] 1) Incoming dummy wafers are inspected for abnormalities; 2) Incoming pretreatment is performed; 3) Cleaning is performed again; 4) Fabrication of the PI1 layer; 5a) Sputtering of the seed layer; 5b) Photoresist coating; 5c) Exposure; 5d) Development to form a Pt / Ni resistor pattern; 5e) Electroplating pretreatment; 5f) Platinum / Ni electroplating; 5g) Photoresist stripping; 5h) Photoresist coating; 5i) Exposure; 5j) Development to form a copper RDL pattern; 5k) RDL electroplating pretreatment; 5l) RDL copper electroplating, typically with a thickness of approximately 5µm; 5m) Photoresist removal; 5n) Seed layer etching to remove excess seed layer; 6) Fabrication of the PI2 layer. After the PI2 opening is completed, 7) UBM fabrication is performed. Subsequently, 8) Ball placement, 9) Final inspection, and 10) Shipping are performed.

[0114] Among them, when electroplating the platinum or nickel thermal resistor part, the RDL copper trace part is blocked by the photoresist; when electroplating the RDL copper trace part, the already electroplated platinum or nickel thermal resistor part is blocked to ensure the product preparation quality.

[0115] In the present disclosure, when the thermistor temperature sensor 2 for temperature measurement is made of copper, the implementation method is the same as the existing RDL processing technology; when the temperature measuring device uses platinum or nickel and other materials that are different from other lines of the redistribution layer RDL, platinum or nickel is plated in the area where the thermistor temperature sensor 2 of the current redistribution layer RDL is located, and then other areas are blocked. Similarly, copper is plated in other areas of the current redistribution layer RDL, and then the area where the thermistor temperature sensor 2 is located is blocked, and then copper is plated in other redistribution layers RDL to ensure the product quality of the temperature measurement structure, thereby further ensuring the accuracy and reliability of semiconductor temperature measurement.

[0116] Example 3

[0117] The semiconductor package of this embodiment has the temperature measurement structure of the semiconductor package in the above-mentioned embodiment 1 or 2.

[0118] Among them, semiconductor packaging includes wafer-level chip scale packaging or wafer-level packaging, flip-chip packaging, etc.

[0119] In this embodiment, the semiconductor package is provided with a temperature measurement structure, which improves the high-precision and high-efficiency measurement of the actual temperature of the semiconductor PN junction, thereby improving the product reliability and performance of the semiconductor package.

[0120] Example 4

[0121] The temperature measurement device of this embodiment includes the semiconductor package of the above-mentioned embodiment 3 and a data acquisition instrument; wherein the leads at both ends of the thermal resistor temperature sensor 2 in the semiconductor package are electrically connected to the data acquisition instrument according to the requirements of the two-wire method, the three-wire method or the four-wire method.

[0122] Alternatively, the temperature measurement device of this embodiment includes the semiconductor package, substrate, solder balls, and PCB of the above-mentioned embodiment 3, the substrate and / or PCB containing auxiliary measurement components, and the leads at both ends of the thermistor temperature sensor 2 in the semiconductor package are routed within the substrate or PCB according to the two-wire method, three-wire method, or four-wire method measurement requirements, and the corresponding auxiliary measurement components are attached using the SMT process.

[0123] like Figure 14 As shown, the corresponding schematic diagram of the connection between the redistribution layer RDL and the bump Bump; Figure 15 As shown, it is a schematic diagram of the connection between the redistribution layer RDL and the solder ball Ball.

[0124] In this embodiment, the temperature measuring device has a semiconductor package, which improves the high-precision and high-efficiency measurement of the actual temperature of the semiconductor PN junction, thereby improving the product reliability and performance of the temperature measuring device.

[0125] Example 5

[0126] The chip of this embodiment includes the temperature measurement structure in the semiconductor package of embodiment 1 or 2.

[0127] In this embodiment, a temperature measurement structure is provided in the chip, which improves the high-precision and high-efficiency measurement of the actual temperature of the semiconductor PN junction, thereby improving the product reliability and performance of the chip.

[0128] While specific embodiments of the present disclosure have been described above, those skilled in the art will appreciate that these are merely illustrative and that the scope of protection of the present disclosure is defined by the appended claims. Those skilled in the art may make various changes or modifications to these embodiments without departing from the principles and essence of the present disclosure, and such changes and modifications are intended to fall within the scope of protection of the present disclosure.

Claims

1. A temperature measurement structure in a semiconductor package, characterized in that: The semiconductor package includes several layers of redistribution layers (RDL), each layer of the RDL corresponds to a different temperature measurement area, and the temperature measurement structure includes several temperature measurement packaging units, each of which is correspondingly arranged in one of the temperature measurement areas; The temperature measurement package unit includes a thermal resistance temperature sensor; or includes a thermal resistance temperature sensor and a heater; wherein the thermal resistance temperature sensor is formed based on a metal wire cloth of a single metal material and is set to a preset shape; The thermal resistance temperature sensor is used to collect the actual temperature value corresponding to the semiconductor PN junction at the preset measurement area.

2. The temperature measurement structure in a semiconductor package according to claim 1, wherein: The redistribution layer RDL where the thermal resistance temperature sensor is located is interconnected with solder balls or bumps in the semiconductor package; Alternatively, the redistribution layer (RDL) where the thermal resistance temperature sensor is located is electrically connected to a substrate connected to a bump or a PCB connected to a solder ball in the semiconductor package.

3. The temperature measurement structure in a semiconductor package according to claim 2, wherein: Selecting a redistribution layer (RDL) in the semiconductor package, wherein the wiring of the thermal resistor temperature sensor is arranged based on the positions of any two solder balls in the temperature measurement area, adopts the preset shape and avoids the area where the solder balls are located, and is electrically connected to the corresponding two solder balls; Select two or more layers of the redistribution layer RDL in the semiconductor package, and the routing of the thermistor temperature sensor in one layer of the redistribution layer RDL does not need to avoid the area where the solder balls are located and is electrically connected to the corresponding two solder balls, while avoiding the contact settings of other preset functional circuits on the die; the routing of the other layers of the redistribution layer RDL is arranged based on the functional requirements of the other preset functional circuits.

4. The temperature measurement structure in a semiconductor package according to claim 2, wherein: The wiring of the thermistor temperature sensor is based on any two of the bumps in the temperature measurement area, is set in the preset shape, and is arbitrarily set in an area other than the contacts of other preset functional circuits on its die, and is electrically connected to the corresponding two bumps.

5. The temperature measurement structure in a semiconductor package according to claim 2, wherein: Selecting a redistribution layer (RDL) in the semiconductor package, wherein the heater is arranged in an area of the temperature measurement region except for a wiring area of the thermal resistor temperature sensor; Selecting two or more redistribution layers (RDL) in the semiconductor package, wherein the heater is disposed on other redistribution layers (RDL) other than the RDL where the thermal resistor temperature sensor is located; Wherein, the wiring of the thermal resistance temperature sensor is arranged in the preset shape based on the positions of any two solder balls in the temperature measurement area, and is electrically connected to the corresponding two solder balls; The wiring of the thermal resistance temperature sensor is arranged in the preset shape based on the positions of any two of the bumps in the temperature measurement area, and is electrically connected to the corresponding two bumps.

6. The temperature measurement structure in a semiconductor package according to claim 5, wherein: When the thermistor temperature sensor is connected to the bump, the area where the thermistor temperature sensor is located is located in the central area of the temperature measurement area, and the heater is arranged in an area outside the central area in a preset routing manner.

7. The temperature measurement structure in a semiconductor package according to claim 6, wherein: The wiring of the heater and / or thermal resistance temperature sensor is arranged in a uniform wiring manner; And / or, the preset routing mode includes a zigzag routing mode or a spiral routing mode; The heater is electrically connected to any other two solder balls in the temperature measurement area; or, the heater is electrically connected to any other two bumps in the temperature measurement area.

8. The temperature measurement structure in a semiconductor package according to any one of claims 1 to 7, wherein: The preset related parameters of different temperature measurement areas on the same redistribution layer RDL are all the same, all different, or partially the same and partially different; The preset related parameters include at least one of the sizes of the different temperature measurement areas, the shapes of the traces within the temperature measurement areas, the length of the traces, and the spacing between the traces.

9. The temperature measurement structure in a semiconductor package according to any one of claims 1 to 7, wherein: Single metal wires are made of copper, platinum or nickel.

10. The temperature measurement structure in a semiconductor package according to claim 9, wherein: The material of the metal wire of the single metal material is copper, and the temperature measurement structure is processed using a preset copper RDL processing technology; The material of the metal wire of a single metal material is platinum or nickel. For any layer of the redistribution layer RDL, the temperature measurement area of the current redistribution layer RDL is plated with platinum or nickel, and at the same time, other areas of the current redistribution layer RDL are blocked; and, other areas of the current redistribution layer RDL are plated with copper, and at the same time, the temperature measurement area of the current redistribution layer RDL is blocked to complete the processing of the temperature measurement structure.

11. The temperature measurement structure in a semiconductor package according to any one of claims 2 to 7, wherein: The semiconductor package is a wafer-level chip scale package or a wafer-level package, and the thermal resistor temperature sensor is interconnected with the solder ball; The semiconductor package is a flip chip package, and the thermal resistor temperature sensor is interconnected with the bump.

12. A semiconductor package, characterized in that: The semiconductor package comprises the temperature measurement structure in the semiconductor package according to any one of claims 1 to 11.

13. A temperature measuring device, characterized in that: The temperature measuring device comprises the semiconductor package according to claim 12, and a data acquisition instrument; wherein the leads at both ends of the thermal resistance temperature sensor in the semiconductor package are electrically connected to the data acquisition instrument according to the requirements of the two-wire method, the three-wire method or the four-wire method; Alternatively, the temperature measurement device includes the semiconductor package as described in claim 12, as well as a substrate, solder balls and a PCB, the substrate and / or the PCB containing auxiliary measurement elements, and the leads at both ends of the thermistor temperature sensor in the semiconductor package are routed within the substrate and / or the PCB according to the two-wire method, three-wire method or four-wire method measurement requirements, and the corresponding auxiliary measurement elements are attached using the SMT process.

14. A chip, characterized in that: The chip includes the temperature measurement structure in the semiconductor package according to any one of claims 1 to 11.

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