Method and system for measuring thermal resistance of semiconductor device, medium and product

Abstract

The invention discloses a semiconductor device thermal resistance measurement method and system, a medium and a product. The method comprises the following steps of: acquiring the junction temperature # imgabs0 # of each IO pin without a pull-up resistor and a pull-down resistor when the semiconductor device works in a stable state under a main frequency by utilizing the rectification characteristic of an ESD (Electro-Static Discharge) circuit in the IO pins and measuring a relation curve of the current and the junction temperature of the IO pins, and measuring the cover plate temperature # imgabs1 # and the device power consumption # imgabs2 # of the semiconductor device; and calculating the thermal resistance # imgabs6 # of the semiconductor device under the main frequency according to the cover plate temperature # imgabs3 #, the device power consumption # imgabs4 # and the junction temperature # imgabs5 # of each IO pin when the semiconductor device works in a stable state under the main frequency. The invention aims to realize the semiconductor device thermal resistance measurement method, system, medium and product which do not need complicated test equipment, are suitable for various semiconductor devices and can quickly and accurately calculate the thermal resistance of the semiconductor device.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor device thermal resistance measurement, and in particular to a semiconductor device thermal resistance measurement method, system, medium and product. Background Art

[0002] With the rapid development of semiconductor technology, the integration density and power consumption of integrated circuits have continued to increase, resulting in a significant increase in the heat generated by semiconductor devices during operation. Semiconductor device thermal resistance is a key parameter for measuring the heat dissipation performance of semiconductor devices, directly affecting the reliability, performance, and lifespan of the device. Traditional thermal resistance measurement methods often rely on complex thermal test equipment and long test times, making it difficult to accurately measure the device under actual operating conditions. Furthermore, traditional thermal resistance measurement methods often require destroying the device package or using additional temperature sensors, increasing testing cost and complexity. Summary of the Invention

[0003] Technical problem to be solved by the present invention: In response to the above-mentioned problems of the prior art, a method, system, medium and product for measuring the thermal resistance of semiconductor devices are provided. The present invention aims to realize a method, system, medium and product for measuring the thermal resistance of semiconductor devices that do not require complex testing equipment, are applicable to a variety of semiconductor devices, and can quickly and accurately calculate the thermal resistance of semiconductor devices.

[0004] In order to solve the above technical problems, the technical solution adopted by the present invention is: A method for measuring thermal resistance of a semiconductor device comprises the following steps: S1, using the rectification characteristics of the ESD circuit in the IO pin to measure the relationship curve between the IO pin current and the junction temperature, obtain the junction temperature of each IO pin without pull-up or pull-down resistor when the semiconductor device is working in a stable state at the main frequency. , and measure the cover temperature of the semiconductor device and device power consumption ; The IO pin current refers to the current of the diode in the ESD circuit corresponding to the IO pin; S2, according to the cover temperature , device power consumption And the junction temperature of each IO pin when the semiconductor device is working in a stable state at the main frequency Calculate the thermal resistance of semiconductor devices at the main frequency .

[0005] Optionally, step S1 includes: S1.1, placing the semiconductor device in a temperature-adjustable environment; S1.2, set the temperature point of the thermostatic environment; S1.3, determine whether the temperature point is maintained for a specified time. If not, maintain the temperature and wait for the device junction temperature to be the same as the ambient temperature, then jump to step S1.3 to continue the determination; otherwise, jump to step S1.4; S1.4, measure the IO pin currents of N IO pins of the semiconductor device without pull-up or pull-down resistors; S1.5, determine whether the number of set temperature points meets the requirements. If not, change the temperature points of the adjustable temperature environment and jump to step S1.3; otherwise, jump to step S1.6; S1.6, using the set temperature point as the junction temperature, draw a curve of the relationship between the IO pin current and the junction temperature; S1.7, maintain the semiconductor device at ambient temperature and operate the semiconductor device at the main frequency; S1.8, determine whether the semiconductor device is in a stable state. If so, jump to step S1.9; otherwise, jump to step S1.8 and continue determination; S1.9, measuring the cover temperature of semiconductor devices and device power consumption ; S1.10, measure the IO pin currents of N IO pins of the semiconductor device without pull-up or pull-down resistors; S1.11, calculate the IO pin current of N IO pins without pull-up and pull-down resistors according to the relationship curve between IO pin current and junction temperature to obtain the corresponding junction temperature of N IO pins without pull-up and pull-down resistors. .

[0006] Optionally, the specified duration in step S1.3 is 30 minutes.

[0007] Optionally, determining whether the number of set temperature points meets the requirements in step S1.5 includes determining whether the number of set temperature points is greater than or equal to 5. If it is greater than or equal to 5, it is determined that the number of temperature points meets the requirements; otherwise, it is determined that the number of temperature points does not meet the requirements.

[0008] Optionally, in step S1.2, the temperature point of the adjustable temperature environment is set to -55°C, and in step S1.5, the temperature point of the adjustable temperature environment is changed, and the temperature points changed at different times include -15°C, 25°C, 65°C, 105°C and 125°C respectively.

[0009] Optionally, the ambient temperature in step S1.7 is 25°C.

[0010] Optionally, step S2 includes: measuring the junction temperature of each IO pin Calculate the average value to get the junction temperature of the semiconductor device at the main frequency ,according to Calculate the thermal resistance of semiconductor devices at the main frequency ,in is the cover temperature, is the device power consumption.

[0011] In addition, the present invention also provides a semiconductor device thermal resistance measurement system, comprising a microprocessor and a memory connected to each other, wherein the microprocessor is programmed or configured to execute the semiconductor device thermal resistance measurement method.

[0012] In addition, the present invention also provides a computer-readable storage medium, in which a computer program or instruction is stored. The computer program or instruction is programmed or configured to execute the semiconductor device thermal resistance measurement method through a processor.

[0013] In addition, the present invention also provides a computer program product, including a computer program or instructions, which is programmed or configured to execute the semiconductor device thermal resistance measurement method through a processor.

[0014] Compared with the prior art, the present invention can mainly achieve the following beneficial effects: 1. The method for measuring the thermal resistance of a semiconductor device of the present invention utilizes the rectification characteristics of the ESD circuit of an IO pin without pull-up and pull-down, and can complete the thermal resistance measurement without the need for complex equipment. 2. The method for measuring the thermal resistance of a semiconductor device of the present invention ensures the accuracy of the measurement results through multi-temperature point measurement and junction temperature measurement under actual working conditions. 3. The method for measuring the thermal resistance of a semiconductor device of the present invention is easy to operate, applicable to a variety of semiconductor devices, and has wide applicability. 4. The method for measuring the thermal resistance of a semiconductor device of the present invention does not require destroying the device package or using additional temperature sensors, thereby reducing testing costs and complexity. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 Schematic diagram of the basic process of the method of the embodiment of the present invention.

[0016] Figure 2 Detailed flowchart of the method according to the embodiment of the present invention. DETAILED DESCRIPTION

[0017] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0018] like Figure 1 As shown, the semiconductor device thermal resistance measurement method of this embodiment includes the following steps: S1, using the rectification characteristics of the ESD (ElectroStatic Discharge) circuit in the IO pin, by measuring the relationship curve between the IO pin current and the junction temperature, obtain the junction temperature of each IO pin without pull-up or pull-down resistor when the semiconductor device is working in a stable state at the main frequency. , and measure the cover temperature of the semiconductor device and device power consumption ; The IO pin current refers to the current of the diode in the ESD circuit corresponding to the IO pin; S2, according to the cover temperature , device power consumption And the junction temperature of each IO pin when the semiconductor device is working in a stable state at the main frequency Calculate the thermal resistance of semiconductor devices at the main frequency .

[0019] ESD circuits (electrostatic discharge circuits) are key components in semiconductor devices used to prevent electrostatic discharge damage. The input / output ports of semiconductor devices often utilize diode structures to discharge current, thereby protecting the internal circuits. The rectification characteristic of an ESD circuit refers to the nonlinear current-voltage characteristic of the diode, which conducts when forward biased and cuts off when reverse biased. At a fixed voltage, the forward current increases with increasing temperature. Therefore, the forward current of the diode in the ESD circuit of an IO pin varies with temperature. By measuring the current of the diode in the ESD circuit at different temperatures, a temperature-electrical parameter relationship curve can be established, which can then be used to measure junction temperature. See [see reference]. Figure 2 , step S1 in this embodiment includes: S1.1, placing the semiconductor device in a temperature-adjustable environment. As an optional embodiment, the DSP device in this embodiment is specifically a DSP device, and the temperature-adjustable environment uses a ThermoStream temperature control platform. The DSP device is placed on a Verigy93000 DUT Loadboard and the ThermoStream temperature control platform is used to adjust the temperature. S1.2, set the temperature point of the thermostatic environment; S1.3, determine whether the temperature point is maintained for a specified time. If not, maintain the temperature and wait for the device junction temperature to be the same as the ambient temperature, then jump to step S1.3 to continue the determination; otherwise, jump to step S1.4; S1.4, measure the IO pin currents of N IO pins of the semiconductor device without pull-up or pull-down resistors; S1.5, determine whether the number of set temperature points meets the requirements. If not, change the temperature points of the adjustable temperature environment and jump to step S1.3; otherwise, jump to step S1.6; S1.6, using the set temperature point as the junction temperature, draw a curve of the relationship between the IO pin current and the junction temperature; S1.7, maintain the semiconductor device at ambient temperature and operate the semiconductor device at the main frequency; S1.8, determine whether the semiconductor device is in a stable state. If so, jump to step S1.9; otherwise, jump to step S1.8 and continue determination; S1.9, measuring the cover temperature of semiconductor devices and device power consumption ; S1.10, measure the IO pin currents of N IO pins of the semiconductor device without pull-up or pull-down resistors; S1.11, calculate the IO pin current of N IO pins without pull-up and pull-down resistors according to the relationship curve between IO pin current and junction temperature to obtain the corresponding junction temperature of N IO pins without pull-up and pull-down resistors. .

[0020] In step S1 of this embodiment, through the above steps S1.1 to S1.11, the junction temperature of each IO pin without pull-up or pull-down resistor when the semiconductor device is operating at the main frequency and in a stable state is obtained by measuring the relationship curve between the IO pin current and the junction temperature using the rectification characteristics of the ESD circuit in the IO pin. , and measure the cover temperature of the semiconductor device and device power consumption , thermal resistance measurement can be completed without complex equipment, reducing the cost of thermal resistance measurement and improving the efficiency of thermal resistance measurement.

[0021] As an optional implementation, the specified duration in step S1.3 is 30 minutes.

[0022] As an optional implementation, determining whether the number of set temperature points meets the requirements in step S1.5 includes determining whether the number of set temperature points is greater than or equal to 5. If it is greater than or equal to 5, it is determined that the number of temperature points meets the requirements; otherwise, it is determined that the number of temperature points does not meet the requirements.

[0023] As an optional implementation, the temperature point of the adjustable temperature environment is set to -55°C in step S1.2, and the temperature point of the adjustable temperature environment is changed in step S1.5. The temperature points changed at different times include -15°C, 25°C, 65°C, 105°C and 125°C respectively. At a temperature point of -55°C, maintain the ambient temperature for 30 minutes. With the rest of the pins floating, select 7 IO pins of the device without pull-up or pull-down, quickly input 0.6V voltage between the pins and ground, and measure the pin current of the 7 IO pins. Similarly, it also includes: at a temperature point of -15°C, maintain the ambient temperature for 30 minutes. With the rest of the pins floating, select 7 IO pins of the device without pull-up or pull-down, quickly input 0.6V voltage between the pins and ground, and measure the pin current of the 7 IO pins. At a temperature point of 25°C, maintain the ambient temperature for 30 minutes. With the rest of the pins floating, select 7 IO pins of the device without pull-up or pull-down, quickly input 0.6V voltage between the pins and ground, and measure the pin current of the 7 IO pins. Pin current; at 65°C, maintaining ambient temperature for 30 minutes, with the remaining pins floating, select seven IO pins without pull-up / down pull-ups and pull-down pull-ups on the device. A 0.6V voltage was quickly applied between each pin and ground, and the pin current was measured. At 105°C, maintaining ambient temperature for 30 minutes, with the remaining pins floating, select seven IO pins without pull-up / down pull-ups and pull-down pull-ups on the device. A 0.6V voltage was quickly applied between each pin and ground, and the pin current was measured. At 125°C, maintaining ambient temperature for 30 minutes, with the remaining pins floating, select seven IO pins without pull-up / down pull-ups and pull-down pull-ups on the device. A 0.6V voltage was quickly applied between each pin and ground, and the pin current was measured. Based on the measured pin current and temperature of the seven IO pins, a current-junction temperature curve was plotted for the seven IO pins.

[0024] The ambient temperature in step S1.7 of this embodiment is 25°C. In this embodiment, the ambient temperature is maintained at 25°C, and the device is kept operating at a main frequency of 600MHz for 30 minutes; the power consumption of the device at the main frequency of 600MHz is measured. 1.114W, measuring the cover temperature The temperature of the cover is 36.6°C. After measuring the cover temperature, quickly measure the current of the seven IO pins: with the other pins floating, select the seven IO pins of the device without pull-up or pull-down switches, quickly input a 0.6V voltage between the pins and ground, and measure the pin current of the seven IO pins. Based on the measured current of the seven IO pins and the plotted current and junction temperature curve of the seven IO pins, obtain the junction temperature of the seven IO pins.

[0025] See also Figure 2 In this embodiment, step S2 includes: measuring the junction temperature of each IO pin Calculate the average value to get the junction temperature of the semiconductor device at the main frequency ,according to Calculate the thermal resistance of semiconductor devices at the main frequency ,in is the cover temperature, is the device power consumption. In this embodiment, the junction temperature of each IO pin is Calculate the average value to get the junction temperature of the semiconductor device at the main frequency The junction temperature is 43.08℃, and the device power consumption is 1.114W, cover temperature Substitute the above formula into 36.6℃ to calculate the thermal resistance of the semiconductor device at the main frequency. It is 5.817℃ / W.

[0026] It can be seen that the semiconductor device thermal resistance measurement method of this embodiment can utilize the rectification characteristics of the ESD circuit in the IO interface without pull-up and pull-down, and calculate the device thermal resistance by measuring the relationship curve between the IO pin current and the junction temperature. This method utilizes the rectification characteristics of the ESD circuit in the IO interface, and calculates the device thermal resistance quickly and accurately by measuring the relationship curve between the IO pin current and the junction temperature, combined with the measurement of device power consumption and cover temperature. The semiconductor device thermal resistance measurement method of this embodiment does not require complex testing equipment, is applicable to a variety of semiconductor devices, and has broad application prospects.

[0027] In addition, this embodiment also provides a semiconductor device thermal resistance measurement system, including a microprocessor and a memory connected to each other, wherein the microprocessor is programmed or configured to execute the semiconductor device thermal resistance measurement method.

[0028] In addition, this embodiment further provides a computer-readable storage medium, in which a computer program or instruction is stored. The computer program or instruction is programmed or configured to execute the semiconductor device thermal resistance measurement method through a processor.

[0029] In addition, this embodiment also provides a computer program product, including a computer program or instructions, which are programmed or configured to execute the semiconductor device thermal resistance measurement method through a processor.

[0030] The above description is merely a preferred embodiment of the present invention. The scope of protection of the present invention is not limited to the above embodiment. All technical solutions based on the concept of the present invention are within the scope of protection of the present invention. It should be noted that for those skilled in the art, various improvements and modifications that do not depart from the principles of the present invention should also be considered within the scope of protection of the present invention.

Claims

1. A method for measuring thermal resistance of a semiconductor device, characterized in that: The steps include: S1, using the rectification characteristics of the ESD circuit in the IO pin to measure the relationship curve between the IO pin current and the junction temperature, obtain the junction temperature of each IO pin without pull-up or pull-down resistor when the semiconductor device is working in a stable state at the main frequency. , and measure the cover temperature of the semiconductor device and device power consumption ; The IO pin current refers to the current of the diode in the ESD circuit corresponding to the IO pin; S2, according to the cover temperature , device power consumption And the junction temperature of each IO pin when the semiconductor device is working in a stable state at the main frequency Calculate the thermal resistance of semiconductor devices at the main frequency .

2. The method for measuring thermal resistance of a semiconductor device according to claim 1, wherein: Step S1 includes: S1.1, placing the semiconductor device in a temperature-adjustable environment; S1.2, set the temperature point of the thermostatic environment; S1.3, determine whether the temperature point is maintained for a specified time. If not, maintain the temperature and wait for the device junction temperature to be the same as the ambient temperature, then jump to step S1.3 to continue the determination; otherwise, jump to step S1.4; S1.4, measure the IO pin currents of N IO pins of the semiconductor device without pull-up or pull-down resistors; S1.5, determine whether the number of set temperature points meets the requirements. If not, change the temperature points of the adjustable temperature environment and jump to step S1.3; otherwise, jump to step S1.6; S1.6, using the set temperature point as the junction temperature, draw a curve of the relationship between the IO pin current and the junction temperature; S1.7, maintain the semiconductor device at ambient temperature and operate the semiconductor device at the main frequency; S1.8, determine whether the semiconductor device is in a stable state. If so, jump to step S1.9; otherwise, jump to step S1.8 to continue determination; S1.9, measuring the cover temperature of semiconductor devices and device power consumption ; S1.10, measure the IO pin currents of N IO pins of the semiconductor device without pull-up or pull-down resistors; S1.11, calculate the IO pin current of N IO pins without pull-up and pull-down resistors according to the relationship curve between IO pin current and junction temperature to obtain the corresponding junction temperature of N IO pins without pull-up and pull-down resistors. .

3. The method for measuring thermal resistance of a semiconductor device according to claim 2, wherein: The specified duration in step S1.3 is 30 minutes.

4. The method for measuring thermal resistance of a semiconductor device according to claim 2, wherein: In step S1.5, determining whether the number of set temperature points meets the requirements includes determining whether the number of set temperature points is greater than or equal to 5. If it is greater than or equal to 5, it is determined that the number of temperature points meets the requirements; otherwise, it is determined that the number of temperature points does not meet the requirements.

5. The method for measuring thermal resistance of a semiconductor device according to claim 2, wherein: In step S1.2, the temperature point of the temperature-adjustable environment is set to -55°C. In step S1.5, the temperature point of the temperature-adjustable environment is changed. The temperature points changed at different times include -15°C, 25°C, 65°C, 105°C and 125°C respectively.

6. The method for measuring thermal resistance of a semiconductor device according to claim 2, wherein: The ambient temperature in step S1.7 is 25°C.

7. The method for measuring thermal resistance of a semiconductor device according to claim 1, wherein: Step S2 includes: measuring the junction temperature of each IO pin Calculate the average value to get the junction temperature of the semiconductor device at the main frequency ,according to Calculate the thermal resistance of semiconductor devices at the main frequency ,in is the cover temperature, is the device power consumption.

8. A semiconductor device thermal resistance measurement system comprising a microprocessor and a memory connected to each other, characterized in that: The microprocessor is programmed or configured to execute the semiconductor device thermal resistance measurement method according to any one of claims 1 to 7.

9. A computer-readable storage medium having a computer program or instruction stored therein, characterized in that: The computer program or instruction is programmed or configured to execute the semiconductor device thermal resistance measurement method according to any one of claims 1 to 7 through a processor.

10. A computer program product comprising a computer program or instructions, characterized in that The computer program or instruction is programmed or configured to execute the semiconductor device thermal resistance measurement method according to any one of claims 1 to 7 through a processor.

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