Coupling modulation micro-ring based on ITO

Abstract

The invention relates to the field of optics, in particular to an ITO-based coupling modulation micro-ring which comprises a micro-ring resonant cavity structure, a bus waveguide structure and a coupling modulation unit, the micro-ring resonant cavity structure is provided with a first doped region, the bus waveguide structure is arranged on one side of the micro-ring resonant cavity structure and is provided with a second doped region coupled with the first doped region, and the coupling modulation unit is arranged on the micro-ring resonant cavity structure. The coupling modulation unit comprises an ITO material structure, a first insulating material structure and a second insulating material structure, the ITO material structure is arranged between the two doped regions at intervals, and the carrier concentration of a related interface can be changed by changing the voltage applied to the doped regions, so that the dielectric constant and the coupling light intensity of the ITO material structure are changed. The technical effects that effective coupling modulation can be carried out on the coupling modulation micro-ring based on the ITO, light reflection is reduced, and the loss of the micro-ring resonant cavity structure is increased are achieved.

Description

Technical Field

[0001] The present application relates to the technical field of optical communication devices, and in particular to an ITO-based coupled modulation microring. Background Art

[0002] In recent years, the rapid development of technologies such as artificial intelligence, fifth-generation mobile communications (5G), and high-definition streaming media has driven exponential growth in the demand for interconnect bandwidth in data centers and computing centers. Traditional short-distance interconnect technologies based on electrical signals are limited by physical process bottlenecks and are no longer able to meet the demands for high speed and low power consumption. In this context, silicon photonics, due to its compatibility with CMOS processes, has become a core platform for optical interconnect technology. Microring resonator modulators, in particular, have become a research hotspot for silicon optical modulators due to their miniaturization, high integration density, and strong wavelength selectivity.

[0003] However, the current mainstream micro-ring modulator relies on the plasma dispersion effect of silicon materials, adjusting the refractive index of the micro-ring by changing the carrier concentration, thereby shifting the resonant wavelength to achieve intensity modulation. This approach has significant limitations: 1) Bandwidth limitation: The modulation bandwidth is limited by the Q factor (quality factor) of the microring resonator. The higher the Q value, the longer the photon lifetime, resulting in a decrease in modulation speed. 2) Insufficient modulation depth: The refractive index adjustment range of silicon's plasma dispersion effect is limited, and the modulation depth depends on the slope of the transmission spectrum (positively correlated with the Q factor), making it difficult to achieve a high extinction ratio; 3) Performance trade-off: A high Q value can improve wavelength selectivity, but it will sacrifice bandwidth and modulation depth, limiting its application in high-speed scenarios.

[0004] To solve the above problems, a new modulation mechanism is urgently needed that breaks through the Q factor limitation and has both high modulation depth and wide bandwidth. Summary of the Invention

[0005] In order to solve the technical problems in the prior art, the present application provides an ITO-based coupling modulation microring.

[0006] The present application provides an ITO-based coupled modulation microring using the following technical solutions: An ITO-based coupled modulation microring, comprising: a micro-ring resonant cavity structure, on which a first doping region is disposed; a bus waveguide structure, located on one side of the microring resonant cavity structure, wherein a second doping region is provided on the bus waveguide structure, and the second doping region is coupled to the first doping region; A coupling modulation unit, comprising an ITO material structure, a first insulating material structure, and a second insulating material structure, wherein the ITO material structure is spaced between the first doped region and the second doped region, the first insulating material structure is disposed between the bus waveguide structure and the ITO material structure, and is used to electrically isolate the first doped region from the ITO material structure; the second insulating material structure is disposed between the microring resonant cavity structure and the ITO material structure, and is used to electrically isolate the second doped region from the ITO material structure; By changing the voltage applied to the first doping region and / or the second doping region, the carrier concentration at the interface between the first insulating material structure and the second insulating material structure and the ITO material structure is changed, so as to change the dielectric constant of the ITO material structure through the plasma dispersion effect, thereby changing the light intensity coupled from the bus waveguide structure through the ITO material structure into the microring resonant cavity structure.

[0007] In some embodiments, the microring resonator structure and the bus waveguide structure are both composed of half-ridged waveguides.

[0008] In some embodiments, the first doped region includes a first N-type doped region and a first N-type heavily doped region, the first N-type doped region is in contact with the ITO material structure to reduce carrier absorption loss and form a first silicon-insulating material-ITO field effect capacitor structure, and the first N-type heavily doped region is in contact with the first insulating material structure to ensure ohmic contact and low resistance.

[0009] In some embodiments, the second doped region includes a second N-type doped region and a second N-type heavily doped region, the second N-type doped region is in contact with the ITO material structure, for reducing carrier absorption loss and forming a second silicon-insulating material-ITO field effect capacitor structure, and the second N-type heavily doped region is in contact with the second insulating material structure, for ensuring ohmic contact and low resistance.

[0010] In some embodiments, the first insulating material structure and the second insulating material structure are both made of hafnium oxide.

[0011] In some embodiments, the ITO-based coupling modulation microring further includes a substrate, and the microring resonant cavity structure, the bus waveguide structure, and the coupling modulation unit are disposed on the substrate.

[0012] In some embodiments, the substrate is a silicon dioxide substrate, and a cladding layer is disposed on the substrate.

[0013] In some embodiments, both ends of the ITO material structure are configured as tapered structures to reduce light reflection.

[0014] In some embodiments, an upper adder-downloader waveguide is further provided on the other side of the microring resonant cavity structure, and the upper adder-downloader waveguide is coupled with the microring resonant cavity structure to increase the loss of the microring resonant cavity structure.

[0015] In some embodiments, a loss control doping region is provided on the other side of the microring resonant cavity structure to increase the loss of the microring resonant cavity structure.

[0016] In summary, this application includes at least one of the following beneficial technical effects: 1. By varying the voltage applied to the first doped region and / or the second doped region, the carrier concentration at the interface between the first insulating material structure and the second insulating material structure and the ITO material structure is changed, thereby changing the dielectric constant of the ITO material structure through the plasma dispersion effect, thereby changing the intensity of light coupled from the bus waveguide structure through the ITO material structure into the microring resonator structure. This modulation method differs from traditional modulation methods that rely on resonant wavelength shifts and is not limited by the Q factor of the microring resonator, achieving both high speed and large modulation depth. 2. By setting the ends of the ITO material structure into a tapered structure, light reflection is effectively reduced, reducing the interference of the anti-phase coupled light intensity on the optical signal. This further improves the transmission quality and modulation effect of the optical signal in the coupled modulation microring, making the performance of the entire modulator more stable and reliable; 3. By coupling the upper and lower end waveguides with the microring resonator structure, the loss of the microring resonator structure is increased, the photon lifetime is reduced, and the modulator can adapt to the needs of higher frequency optical signal modulation. This further improves the application performance of ITO-based coupled modulation microrings in the field of high-speed optical communications. 4. By incorporating a loss-control doping region, the optical properties of the microring resonator structure are altered, increasing its internal losses. This increased loss reduces the photon lifetime, thereby broadening the modulator's bandwidth. Compared to other methods of increasing loss through external structures, the loss-control doping region is more flexible and can precisely control the loss magnitude based on specific design requirements, thereby better optimizing the modulator's bandwidth and improving the adaptability and performance of the ITO-based coupled modulated microring in different application scenarios. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 Schematic diagram of the structure of the ITO-based coupling modulation microring provided in Example 1 of the present application (substrate omitted); Figure 2 yes Figure 1 Sectional view of mid-section AA; Figure 3Schematic diagram of the structure of the ITO-based coupling modulation microring provided in Example 2 of the present application; Figure 4 Schematic diagram of the structure of the ITO-based coupling modulation microring provided in Example 3 of the present application; Figure 5 Schematic diagram of the structure of the ITO-based coupling modulation microring provided in Example 4 of the present application; Explanation of the accompanying symbols: 1. Microring resonant cavity structure; 11. First doping region; 111. First N-type doping region; 112. First N-type heavily doped region; 12. Loss control doping region; 2. Bus waveguide structure; 21. Second doping region; 211. Second N-type doping region; 212. Second N-type heavily doped region; 3. Coupling modulation unit; 31. ITO material structure; 32. First insulating material structure; 33. Second insulating material structure; 4. Substrate; 5. Upper adder-lower end waveguide. DETAILED DESCRIPTION

[0018] The following is combined with Figure 1-Figure 5 This application is described in further detail.

[0019] This application primarily employs ITO (indium tin oxide) material in the coupling region to adjust the coupling efficiency and achieve modulation, overcoming the Q-factor limitation and achieving a high-speed, high-deep modulation modulator. Due to its high carrier concentration and strong plasmon dispersion, ITO provides an ideal medium for dynamic control of the coupling region. By introducing ITO into the coupling region between the microring and bus waveguide, the optical coupling efficiency can be directly adjusted, rather than relying on resonant wavelength shifts. This bypasses the Q-factor constraints on performance and opens a new path for high-speed, high-depth optical modulation.

[0020] The following is a further detailed description of the present application.

[0021] Example 1 Please refer to Figure 1 and Figure 2 The ITO-based coupled modulation microring provided in the embodiments of the present application includes a microring resonant cavity structure 1, a bus waveguide structure 2, and a coupling modulation unit 3. The bus waveguide structure 2 is located on one side of the microring resonant cavity structure 1, and the two are coupled via the coupling modulation unit 3. This structural arrangement enables optical signals to be transmitted from the bus waveguide structure 2 to the microring resonant cavity structure 1 through the coupling modulation unit 3, thereby achieving optical signal modulation.

[0022] Specifically, a first doping region 11 is provided on the microring resonator structure 1 , and a second doping region 21 is provided on the bus waveguide structure 2 , and the second doping region 21 is coupled to the first doping region 11 .

[0023] The coupling modulation unit 3 includes an ITO material structure 31, a first insulating material structure 32, and a second insulating material structure 33. The ITO material structure 31 is spaced between the first doped region 11 and the second doped region 21. ITO material itself has the characteristics of high carrier concentration and strong plasma dispersion effect, which is very suitable for adjusting the optical coupling efficiency. For example, the ITO material structure 31 can be prepared into a thin film using magnetron sputtering to ensure its uniformity and stability. Alternatively, it can be prepared using methods such as chemical vapor deposition. The first insulating material structure 32 is arranged between the bus waveguide structure 2 and the ITO material structure 31 to electrically isolate the first doped region 11 from the ITO material structure 31; the second insulating material structure 33 is arranged between the microring resonator structure 1 and the ITO material structure 31 to electrically isolate the second doped region 21 from the ITO material structure 31. The materials of the first insulating material structure 32 and the second insulating material structure 33 are both hafnium oxide. Hafnium oxide has good insulating properties and chemical stability and can effectively achieve the electrical isolation function. For example, hafnium oxide can be deposited into a uniform thin film using atomic layer deposition to ensure its insulation properties. Alternative materials include aluminum oxide and other insulating materials. The combination of the first insulating material structure 32 and the second insulating material structure 33 achieves electrical isolation without affecting the transmission of optical signals, enabling the entire coupled modulation unit 3 to function properly.

[0024] By changing the voltage applied to the first doping region 11 and / or the second doping region 21, the carrier concentration at the interface between the first insulating material structure 32 and the second insulating material structure 33 and the ITO material structure 31 is changed, so as to change the dielectric constant of the ITO material structure 31 through the plasma dispersion effect, thereby changing the light intensity coupled from the bus waveguide structure 2 through the ITO material structure 31 into the microring resonant cavity structure 1. Specifically, when voltage is applied, the electric field affects the carrier distribution at the interface, thereby changing the dielectric constant of the ITO material, and the change in the dielectric constant directly affects the coupling efficiency of the light, ultimately achieving light intensity modulation. This modulation method is different from the traditional modulation method that relies on the resonant wavelength offset. It is not limited by the Q factor of the microring resonator and can simultaneously achieve high-speed and large modulation depth modulation effects.

[0025] For details, please refer to Figure 1 and Figure 2The first doped region 11 includes a first N-type doped region 111 and a first N-type heavily doped region 112. A key structural feature of the first N-type doped region 111 is its contact with the ITO material structure 31. This contact is crucial because, on the one hand, it reduces carrier absorption losses, and, on the other hand, it forms a first silicon-insulator-ITO field-effect capacitor structure together with the insulating material and ITO material. For example, the first N-type doped region 111 can be doped using ion implantation. By precisely controlling the ion implantation dose and energy, the region can achieve a suitable carrier concentration and distribution. Alternatively, doping can be performed using diffusion, which can also achieve a similar reduction in carrier absorption losses. The first N-type heavily doped region 112 contacts the first insulating material structure 32, ensuring good ohmic contact and low resistance with the external circuit. For example, high-dose ion implantation can be used to achieve a high carrier concentration in the first N-type heavily doped region 112 to meet the low resistance requirement. Alternatively, the high-doping concentration region can be formed using epitaxial growth. The first N-type doped region 111 and the first N-type heavily doped region 112 together constitute the first doped region 11. They cooperate with each other. The first N-type doped region 111 serves to reduce loss and form a specific capacitor structure, while the first N-type heavily doped region 112 serves to ensure good electrical connection. The two work together to make the microring resonator structure 1 more stable and reliable in electrical performance.

[0026] For details, please refer to Figure 1 and Figure 2 The second doped region 21 includes a second N-type doped region 211 and a second N-type heavily doped region 212. The second N-type doped region 211 contacts the ITO material structure 31, which can reduce carrier absorption loss and form a second silicon-insulating material-ITO field-effect capacitor structure. Its structural features and formation method are similar to those of the first N-type doped region 111, and it can also be doped by ion implantation or diffusion. The replaceable features can also be different doping processes. The second N-type heavily doped region 212 contacts the second insulating material structure 33 to ensure ohmic contact and low resistance. The formation method and function are also similar to those of the first N-type heavily doped region 112, and high-dose ion implantation or epitaxial growth can be used. The second N-type doped region 211 and the second N-type heavily doped region 212 cooperate with each other, so that the bus waveguide structure 2 matches the microring resonator structure 1 in terms of electrical performance, ensuring the effective transmission and modulation of optical signals between the two.

[0027] Furthermore, both the microring resonator structure 1 and the bus waveguide structure 2 are constructed from half-ridged waveguides. Half-ridged waveguides offer excellent optical confinement and low transmission loss. For example, half-ridged waveguides can be fabricated on a silicon substrate 4 through photolithography and etching processes. Other waveguide types, such as rectangular waveguides, can be used as alternatives, but in this solution, half-ridged waveguides are more suitable for optical signal transmission and modulation.

[0028] Further, please refer to Figure 1 and Figure 2 The ITO-based coupled modulation microring also includes a substrate 4, on which the microring resonant cavity structure 1, bus waveguide structure 2, and coupled modulation unit 3 are disposed. Substrate 4 is a silicon dioxide substrate, which has excellent insulation properties and stability, providing stable support for the entire structure. A cladding layer, also made of silicon dioxide, is provided on substrate 4. The cladding further confines the optical signal, reducing light leakage and improving optical signal transmission efficiency.

[0029] The implementation principle of this embodiment is as follows: The ITO-based coupled modulation microring of this embodiment introduces ITO material into the coupling region through a unique structural design, and combines the setting of the doped region and the insulating material to form a special field-effect capacitor structure. By changing the applied voltage to adjust the dielectric constant of the ITO material, the optical coupling efficiency is changed to achieve light intensity modulation. This modulation method breaks through the limitations of traditional microring modulators limited by the Q factor, and avoids the negative impact of high Q value on bandwidth and modulation depth. It can simultaneously achieve modulation effects of high speed and large modulation depth, greatly improving the application performance of microring modulators in high-speed scenarios. Compared with traditional microring modulators, it has significant innovation and practicality, and provides a new solution for the development of optical interconnection technology.

[0030] Example 2 Please refer to Figure 3 , the difference between this embodiment and the above embodiment is that: in this embodiment, the two ends of the ITO material structure 31 are set to a tapered structure. The purpose of designing this tapered structure is to reduce light reflection. When light encounters the interface of the material during transmission, reflection will occur, and the reflected light will have an adverse effect on the transmission and modulation of the optical signal. Setting the two ends of the ITO material structure 31 to a cone can make the light gradually transition when entering and leaving the ITO material, reducing the reflection coefficient at the interface, thereby reducing the intensity of the anti-phase coupled light. For example, the tapered structure can be precisely processed by photolithography and etching processes to have a suitable cone angle and length. An alternative feature can be the use of a gradient refractive index coating to achieve a similar reflection reduction effect.

[0031] The principle behind this embodiment is that by configuring the ends of the ITO material structure 31 into tapered structures, light reflection is effectively reduced, thereby lowering the interference of the reverse-coupled light intensity on the optical signal. This further improves the transmission quality and modulation effect of the optical signal in the coupled modulation microring, making the overall modulator more stable and reliable. Compared to embodiments without tapered structures, this achieves superior performance in optical signal processing and modulation, enhancing the competitiveness of ITO-based coupled modulation microrings in practical applications.

[0032] Example 3 Please refer to Figure 4 The difference between this embodiment and the above embodiment is that: in this embodiment, an upper add-download waveguide 5 is further provided on the other side of the microring resonant cavity structure 1. The upper add-download waveguide 5 is coupled to the microring resonant cavity structure 1 and is used to increase the loss of the microring resonant cavity structure 1. The upper add-download waveguide 5 can be a semi-ridge waveguide similar to the microring resonant cavity structure 1 and the bus waveguide structure 2. When the optical signal is transmitted in the microring resonant cavity structure 1, the upper add-download waveguide 5 interacts with the microring resonant cavity structure 1, so that a portion of the optical energy is coupled into the upper add-download waveguide 5, thereby increasing the loss of the microring resonant cavity structure 1. This increase in loss can reduce the photon lifetime, thereby obtaining a larger bandwidth. For example, the position and size of the upper add-download waveguide 5 can be adjusted according to specific design requirements to achieve the optimal loss increase effect. An alternative feature can be to use a waveguide made of an absorbing material to increase the loss.

[0033] The principle behind this embodiment is that coupling between the upper and lower end waveguides 5 and the microring resonator structure 1 increases the losses in the microring resonator structure 1 and reduces the photon lifetime. According to relevant optical principles, reducing the photon lifetime broadens the modulator's bandwidth, enabling the modulator to adapt to higher-frequency optical signal modulation requirements. This further enhances the performance of ITO-based coupled modulated microrings in high-speed optical communications, meeting the requirements of modern communications for high-speed, wide-bandwidth modulators.

[0034] Example 4 Please refer to Figure 5, the difference between this embodiment and the above embodiment is that: in this embodiment, a loss control doping region 12 is provided on the other side of the microring resonant cavity structure 1 to increase the loss of the microring resonant cavity structure 1. The loss control doping region 12 can be formed at a specific position of the microring resonant cavity structure 1 by a specific doping process. For example, ion implantation can be used to implant an appropriate amount of impurity ions into one side of the microring resonant cavity structure 1 to form a loss control doping region 12. These impurities will absorb and scatter the optical signal, thereby increasing the loss of the microring resonant cavity structure 1. Unlike the method of increasing the loss of the upper-download end waveguide 5, the loss control doping region 12 increases the loss by changing the material properties of the microring resonant cavity structure 1 itself. An alternative feature may be to increase the loss by coating an absorption layer on the surface of the microring resonant cavity structure 1.

[0035] The implementation principle of this embodiment is as follows: by providing a loss-control doping region 12, the optical properties of the microring resonator structure 1 are modified, increasing its internal losses. This increased loss reduces the photon lifetime, thereby broadening the modulator bandwidth. Compared with other methods of increasing loss through external structures, the provision of the loss-control doping region 12 is more flexible and can precisely control the magnitude of the loss according to specific design requirements, thereby better optimizing the modulator bandwidth and improving the adaptability and performance of the ITO-based coupled modulation microring in different application scenarios.

[0036] In summary, the beneficial technical effects of this application include: 1. By varying the voltage applied to the first doped region 11 and / or the second doped region 21, the carrier concentration at the interface between the first insulating material structure 32 and the second insulating material structure 33 and the ITO material structure 31 is changed, thereby changing the dielectric constant of the ITO material structure 31 through the plasma dispersion effect, thereby changing the intensity of light coupled from the bus waveguide structure 2 through the ITO material structure 31 into the microring resonator structure 1. This modulation method differs from traditional modulation methods that rely on resonant wavelength shifts and is not limited by the Q factor of the microring resonator, achieving both high speed and large modulation depth. 2. By configuring the ends of the ITO material structure 31 into a tapered structure, light reflection is effectively reduced, and the interference of the reverse-coupled light intensity on the optical signal is reduced. This further improves the transmission quality and modulation effect of the optical signal in the coupled modulation microring, making the performance of the entire modulator more stable and reliable. 3. The coupling between the upper and lower waveguides 5 and the microring resonator structure 1 increases the loss of the microring resonator structure 1 and reduces the photon lifetime, enabling the modulator to adapt to higher-frequency optical signal modulation requirements. This further enhances the performance of ITO-based coupled modulation microrings in high-speed optical communications. 4. By providing a loss-control doping region 12, the optical properties of the microring resonator structure 1 are altered, increasing its internal losses. This increased loss reduces the photon lifetime, thereby broadening the modulator's bandwidth. Compared to other methods of increasing losses through external structures, the provision of the loss-control doping region 12 is more flexible and can precisely control the magnitude of the loss according to specific design requirements, thereby better optimizing the modulator's bandwidth and improving the adaptability and performance of the ITO-based coupled modulation microring in different application scenarios.

[0037] The specific implementation methods of the present application described above do not constitute a limitation on the scope of protection of the present application. Any other corresponding changes and modifications made based on the technical concept of the present application should be included in the scope of protection of the present application.

Claims

1. A coupled modulation microring based on ITO, characterized in that: include: A microring resonant cavity structure (1) having a first doping region (11) provided thereon; A bus waveguide structure (2) is located on one side of the microring resonant cavity structure (1), a second doping region (21) is provided on the bus waveguide structure (2), and the second doping region (21) is coupled to the first doping region (11); A coupling modulation unit (3) comprises an ITO material structure (31), a first insulating material structure (32), and a second insulating material structure (33); the ITO material structure (31) is arranged between the first doping region (11) and the second doping region (21); the first insulating material structure (32) is arranged between the bus waveguide structure (2) and the ITO material structure (31) and is used to electrically isolate the first doping region (11) from the ITO material structure (31); and the second insulating material structure (33) is arranged between the microring resonant cavity structure (1) and the ITO material structure (31) and is used to electrically isolate the second doping region (21) from the ITO material structure (31); By changing the voltage applied to the first doping region (11) and / or the second doping region (21), the carrier concentration at the interface between the first insulating material structure (32) and the second insulating material structure (33) and the ITO material structure (31) is changed, so as to change the dielectric constant of the ITO material structure (31) through the plasma dispersion effect, thereby changing the intensity of light coupled from the bus waveguide structure (2) through the ITO material structure (31) into the microring resonant cavity structure (1).

2. The ITO-based coupled modulation microring according to claim 1, characterized in that: The micro-ring resonant cavity structure (1) and the bus waveguide structure (2) are both composed of a semi-ridged waveguide.

3. The ITO-based coupled modulation microring according to claim 1, characterized in that: The first doping region (11) comprises a first N-type doping region (111) and a first N-type heavily doped region (112); the first N-type doping region (111) contacts the ITO material structure (31) to reduce carrier absorption loss and form a first silicon-insulating material-ITO field effect capacitor structure; the first N-type heavily doped region (112) contacts the first insulating material structure (32) to ensure ohmic contact and low resistance.

4. The ITO-based coupled modulation microring according to claim 1, characterized in that: The second doped region (21) comprises a second N-type doped region (211) and a second N-type heavily doped region (212); the second N-type doped region (211) contacts the ITO material structure (31) to reduce carrier absorption loss and form a second silicon-insulating material-ITO field effect capacitor structure; the second N-type heavily doped region (212) contacts the second insulating material structure (33) to ensure ohmic contact and low resistance.

5. The ITO-based coupled modulation microring according to claim 1, characterized in that: The materials of the first insulating material structure (32) and the second insulating material structure (33) are both hafnium oxide.

6. The ITO-based coupled modulation microring according to claim 1, characterized in that: It also includes a substrate (4), on which the microring resonant cavity structure (1), the bus waveguide structure (2) and the coupling modulation unit (3) are arranged.

7. The ITO-based coupled modulation microring according to claim 6, characterized in that: The substrate (4) is a silicon dioxide substrate (4), and a cladding layer is provided on the substrate (4).

8. The ITO-based coupled modulation microring according to claim 1, characterized in that: Both ends of the ITO material structure (31) are configured as tapered structures to reduce light reflection.

9. The ITO-based coupled modulation microring according to claim 1, characterized in that: An upper adder-downloader waveguide (5) is further provided on the other side of the microring resonant cavity structure (1); the upper adder-downloader waveguide (5) is coupled to the microring resonant cavity structure (1) to increase the loss of the microring resonant cavity structure (1).

10. The ITO-based coupled modulation microring according to claim 1, characterized in that: A loss control doping region (12) is provided on the other side of the micro-ring resonant cavity structure (1) for increasing the loss of the micro-ring resonant cavity structure (1).

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