Non-contact monitoring method for wafer high-energy hydrogen ion implantation process

Abstract

The invention relates to a non-contact monitoring method for a high-energy hydrogen ion implantation process, and belongs to the technical field of semiconductor manufacturing, and the non-contact monitoring method for the high-energy hydrogen ion implantation process comprises the steps: obtaining a monitoring wafer for monitoring the high-energy hydrogen ion implantation process of a wafer, taking the wafer to be subjected to the high-energy hydrogen ion implantation process of the wafer as a process positive wafer, the monitoring wafer is a process accompanying wafer of the wafer high-energy hydrogen ion implantation process; synchronously performing high-energy hydrogen ion implantation on the process accompanying film and the process positive film; and measuring the square resistance of the process accompanying piece by using a non-contact square resistance tester, and evaluating the injection energy, injection dose and process uniformity of the high-energy hydrogen ion injection process of the process positive piece according to the resistance data before injection of the process accompanying piece and the resistance data after injection of the process accompanying piece. The monitoring method provided by the invention does not cause physical damage to the process accompanying wafer and the process positive wafer, so that the integrity of the wafer is protected, and the material waste is reduced.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a non-contact monitoring method for a wafer high-energy hydrogen ion implantation process. Background Art

[0002] In the semiconductor manufacturing field, high-energy hydrogen ion implantation (H2I) is a critical process in the semiconductor manufacturing process. It has been widely used in the doping and defect engineering of power devices, sensors, and radiation-hardened chips. High-energy H2I implantation allows precise control of the electrical properties of wafer materials. However, the stability of the H2I implantation process directly affects the performance of semiconductor devices, and strict monitoring of parameters such as irradiation dose, energy, and process uniformity is generally required.

[0003] Traditional wafer high-energy hydrogen ion implantation process monitoring methods mostly rely on destructive testing. For example, after cutting and sampling the positive film, it is analyzed through secondary ion mass spectrometry (SIMS) or transmission electron microscopy (TEM). This not only leads to waste of production materials, but also cannot achieve real-time monitoring in the line, limiting the improvement of production efficiency and quality control. To improve traditional wafer high-energy hydrogen ion implantation process monitoring methods, some new technical attempts have emerged in the prior art. For example, invention patent application CN103151281A discloses stabilizing the resistance characteristics of an epitaxial layer, and invention patent application CN118553634A discloses introducing a protective layer to reduce thermal wave signal interference. However, these wafer high-energy hydrogen ion implantation process monitoring methods still have the following limitations: 1) The epitaxial layer preparation process is complex, adding additional costs, and the multi-layer structure may interfere with the accurate assessment of the high-energy hydrogen ion implantation depth distribution. 2) Reliance on contact probes (such as the four-probe method) to measure sheet resistance can easily cause damage to the wafer surface. In particular, when the material becomes more brittle after high-energy hydrogen ion implantation, the testing process may introduce defects such as microcracks. 3) The monitor wafer (or control wafer) used to monitor and ensure the stability and consistency of the manufacturing process accumulates lattice damage after multiple irradiation and annealing, resulting in baseline data drift (such as unstable thermal wavefront values). Frequent replacement of new monitor wafers is required, which leads to high production costs.

[0004] Therefore, the present invention proposes a non-contact monitoring method for wafer high-energy hydrogen ion implantation process, aiming to partially or completely solve the above-mentioned technical problems in the existing wafer high-energy hydrogen ion implantation process monitoring, and provide a more practical and reliable solution for wafer high-energy hydrogen ion implantation process monitoring. Summary of the Invention

[0005] This invention application proposes a non-contact monitoring method for wafer high-energy hydrogen ion implantation process, aiming to partially or completely solve the technical problems in existing wafer high-energy hydrogen ion implantation process monitoring, such as the complex epitaxial layer preparation process, the additional cost, the contact probe (such as the four-probe method) measuring the square resistance, which easily causes damage to the wafer surface, the possible introduction of defects such as microcracks during the testing process, the accumulation of lattice damage after multiple irradiation and annealing of the control wafer, resulting in baseline data drift (such as unstable thermal wavefront values), and the need to frequently replace new control wafers. The technical solution of this invention application is as follows:

[0006] A non-contact monitoring method for a high-energy hydrogen ion implantation process, comprising:

[0007] Step S100: obtaining a monitoring wafer for monitoring a high-energy hydrogen ion implantation process of a wafer, wherein the monitoring wafer is a bare wafer that has not been subjected to the high-energy hydrogen ion implantation process, the wafer to be subjected to the high-energy hydrogen ion implantation process of the wafer is a process positive wafer, and the monitoring wafer is a process companion wafer for the high-energy hydrogen ion implantation process of the wafer;

[0008] Step S200: Before the high-energy hydrogen ion implantation process, the sheet resistance of the process companion wafer is measured using a non-contact sheet resistance tester to obtain pre-implantation resistance data of the process companion wafer;

[0009] Step S300: The process companion film and the process main film are simultaneously subjected to a high-energy hydrogen ion implantation process;

[0010] Step S400: After the high-energy hydrogen ion implantation process of the process companion wafer, the sheet resistance of the process companion wafer after the high-energy hydrogen ion implantation process is measured using a non-contact sheet resistance tester to obtain the sheet resistance data of the process companion wafer after the implantation process;

[0011] Step S500 : evaluating the implantation energy, implantation dose, and process uniformity of the high-energy hydrogen ion implantation process of the process master wafer based on the pre-implantation resistance data of the process companion wafer and the post-implantation resistance data of the process companion wafer.

[0012] Optionally, in step S100, the monitoring wafer is N-type or P-type; and / or, the monitoring wafer size ranges from 2 inches to 8 inches.

[0013] Optionally, in step S200 , the range of the pre-injection impedance data is 60-100Ω / sq.

[0014] Optionally, in step S200 or step S400, the non-contact square resistance tester is an eddy current square resistance tester; and / or the non-contact square resistance tester measures the square resistance at 1-300 points.

[0015] Optionally, in step S300, the high energy hydrogen ion implantation process has an implantation energy range of 1 MeV-12 MeV and an implantation dose of 5E10 p / cm 2 -1 E15p / cm2 .

[0016] Optionally, in step S500, the resistance data before injection include R1, R2, ..., Ri, ..., Rn, and the resistance data after injection include T1, T2, ..., Ti, ..., Tn. The resistance difference data TR1, TR2, ..., TRi, ..., TRn and the resistance standard deviation data E are calculated, where TRi and E are respectively:

[0017] TRi=Ti-Ri

[0018]

[0019] i=1, 2, 3, ..., n, where n is a positive integer. The square resistance difference data is used to evaluate the implantation energy and implantation dose, and the square resistance standard deviation data is used to evaluate the process uniformity.

[0020] Optionally, step S500 further includes step S600: annealing the process wafer after the high-energy hydrogen ion implantation process to obtain an annealed process wafer, and recycling the annealed process wafer.

[0021] Optionally, in step S600, the annealing equipment is a tube furnace.

[0022] Optionally, in step S600, the annealing atmosphere is high-purity nitrogen, and / or the annealing temperature is 550°C-800°C.

[0023] Compared with the prior art, the present invention has the following beneficial effects:

[0024] (1) In the present invention, firstly, a non-contact square resistance tester is used to avoid micro cracks or other surface damage that may be introduced by traditional contact measurement (such as four-probe method), which is particularly suitable for the situation where the brittleness of the material increases after high-energy hydrogen ion implantation. The monitoring method will not cause physical damage to the process wafer and the process positive wafer, thus protecting the integrity of the wafer and reducing material waste. In addition, the process wafer is a bare wafer that has not been processed with a complex epitaxial layer or protective layer, and the non-contact measurement will not introduce additional damage, thus simplifying the monitoring process and reducing additional process costs. After high-energy hydrogen ion implantation, the subsequent process wafer can still be recycled through appropriate cleaning and recovery processes (such as annealing or surface treatment), thus overcoming the traditional destructive testing and contact testing. The non-destructive and easy-to-use non-contact square resistance measurement method can quickly obtain data before and after the process, making it suitable for real-time monitoring within semiconductor manufacturing production lines, timely discovering high-energy hydrogen ion process deviations, and improving wafer production efficiency and quality control capabilities. It is applicable to different types of high-energy hydrogen ion implantation processes (such as different energy or dose conditions) and has good versatility for wafer materials (such as silicon and silicon carbide). It is suitable for a variety of semiconductor manufacturing scenarios such as power devices, sensors, and radiation-resistant chips, providing an effective technical solution for the stability of high-energy hydrogen ion implantation processes and cost optimization of semiconductor manufacturing.

[0025] (2) In the present invention, firstly, the annealed process wafer is recycled after annealing, and the number of recycling times is increased to more than 10 times, which can reduce the consumption of new wafers, especially in large-scale production, saving material costs significantly. The semiconductor manufacturing industry has high consumables, and discarded wafers have a great impact on the environment. Annealing recycling reduces waste, meets the requirements of sustainable development, and reduces carbon footprint. In addition, it reduces the frequency of wafer replacement, simplifies the production process, and recycling can reduce downtime, repair the surface damage caused by high-energy hydrogen ion implantation, and extend the life of process wafers. Annealing is also a universal process, applicable to a variety of materials such as silicon and silicon carbide, and also applicable to different device types such as power devices and sensors. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0027] Figure 1 This is a schematic structural diagram of a non-contact monitoring method for a wafer high-energy hydrogen ion implantation process applied for by the present invention;

[0028] Figure 2 This is a schematic diagram of the structure of the process accompanying sheet applied for in the present invention;

[0029] Figure 3 A schematic diagram of the process matching and injection front resistance data for the present invention;

[0030] Figure 4 A schematic diagram of the process configuration and post-implantation resistance data for the present invention;

[0031] Figure 5 This is a schematic diagram of the injection front resistance mapping applied in the present invention;

[0032] Figure 6 This is a schematic diagram of the injection rear resistance mapping applied in the present invention;

[0033] The accompanying drawings are used to provide further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. DETAILED DESCRIPTION

[0034] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments; based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0035] In the description of the present application, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0036] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "plurality" means one, two, or more than two, unless otherwise specifically defined.

[0037] In this application, unless otherwise expressly specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood broadly. For example, they may refer to fixed or detachable connections, integral molding, or integration; they may refer to mechanical or electrical connections; they may refer to direct or indirect connections through an intermediate medium; they may refer to internal communication between two components or the interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on specific circumstances.

[0038] In order to make the purpose, technical solutions and advantages of the present invention more clear, the embodiments of the present invention will be described in further detail below with reference to the accompanying drawings.

[0039] like Figure 1 As shown, a non-contact monitoring method for a wafer high-energy hydrogen ion implantation process includes:

[0040] Step S100: obtaining a monitoring wafer for monitoring a high-energy hydrogen ion implantation process of a wafer, wherein the monitoring wafer is a bare wafer that has not been subjected to the high-energy hydrogen ion implantation process, the wafer to be subjected to the high-energy hydrogen ion implantation process of the wafer is a process positive wafer, and the monitoring wafer is a process companion wafer for the high-energy hydrogen ion implantation process of the wafer;

[0041] Step S200: Before the high-energy hydrogen ion implantation process, the sheet resistance of the process companion wafer is measured using a non-contact sheet resistance tester to obtain pre-implantation resistance data of the process companion wafer;

[0042] Step S300: The process companion film and the process main film are simultaneously subjected to a high-energy hydrogen ion implantation process;

[0043] Step S400: After the high-energy hydrogen ion implantation process of the process companion wafer, the sheet resistance of the process companion wafer after the high-energy hydrogen ion implantation process is measured using a non-contact sheet resistance tester to obtain the sheet resistance data of the process companion wafer after the implantation process;

[0044] Step S500 : evaluating the implantation energy, implantation dose, and process uniformity of the high-energy hydrogen ion implantation process of the process master wafer based on the pre-implantation resistance data of the process companion wafer and the post-implantation resistance data of the process companion wafer.

[0045] In some embodiments, a bare wafer that has not undergone high-energy hydrogen ion implantation is selected as a process companion wafer (monitor wafer) and undergoes high-energy hydrogen ion implantation simultaneously with the process wafer. Before and after the high-energy hydrogen ion implantation, the sheet resistance of the process companion wafer is measured using a non-contact sheet resistance tester (e.g., a test device based on eddy current or optical sensing). Non-contact measurement uses electromagnetic fields or photoelectric signals to interact with the wafer to obtain electrical characteristic data on the wafer surface, avoiding physical damage to the wafer surface caused by traditional contact probes (e.g., the four-probe method).

[0046] In some embodiments, high-energy hydrogen ion implantation changes the carrier concentration and defect distribution of the process wafer, thereby affecting its sheet resistance. By comparing the sheet resistance data of the process wafer before and after implantation, the implantation energy (affecting the implantation depth), dose (affecting the carrier concentration), and process uniformity (reflecting the consistency of the implantation distribution) can be derived. Because the process wafer and the process wafer undergo high-energy hydrogen ion implantation simultaneously, both are affected by the same high-energy hydrogen ion implantation process conditions. The measured data of the process wafer will be highly consistent and correlated with the process parameters of the process wafer, which can be used to quantitatively evaluate the high-energy hydrogen ion implantation effect of the process wafer. If necessary, multiple measurement data of the process wafer can be combined to improve the accuracy and reliability of evaluating the high-energy hydrogen ion implantation process of the process wafer.

[0047] In the present invention application, firstly, a non-contact square resistance tester is adopted to avoid micro cracks or other surface damage that may be introduced by traditional contact measurement (such as four-probe method), which is particularly suitable for the situation where the brittleness of the material increases after high-energy hydrogen ion implantation. The monitoring method will not cause physical damage to the process companion wafer and the process positive wafer, thus protecting the integrity of the wafer and reducing material waste. In addition, the process companion wafer is a bare wafer that has not been processed with a complex epitaxial layer or protective layer, and the non-contact measurement will not introduce additional damage, thus simplifying the monitoring process and reducing additional process costs. After the high-energy hydrogen ion implantation, the subsequent process companion wafer can still be recycled through appropriate cleaning and recovery processes (such as annealing or surface treatment), thus overcoming the problems of traditional destructive testing and contact testing. It has the advantages of being non-destructive, recyclable process wafers, strong real-time monitoring capabilities, and low cost. In addition, the non-contact square resistance measurement is fast and easy to operate, and can quickly obtain data before and after the process. It is suitable for real-time monitoring in semiconductor manufacturing production lines, timely discovering high-energy hydrogen ion process deviations, improving wafer production efficiency and quality control capabilities, and is suitable for different types of high-energy hydrogen ion implantation processes (such as different energy or dose conditions). It has good versatility for wafer materials (such as silicon, silicon carbide, etc.), and is suitable for a variety of semiconductor manufacturing scenarios such as power devices, sensors, and radiation-resistant chips, providing an effective technical solution for the stability of high-energy hydrogen ion implantation processes and cost optimization of semiconductor manufacturing.

[0048] Optionally, in step S100, the monitoring wafer is N-type or P-type; and / or, the monitoring wafer size ranges from 2 inches to 8 inches.

[0049] In some embodiments, N-type wafers use electrons as the majority carriers, while P-type wafers use holes as the majority carriers. Their initial square resistance is determined by the doping concentration. High-energy hydrogen ion implantation changes the wafer's carrier concentration and defect distribution, thereby affecting the square resistance. The choice of N-type or P-type wafer depends primarily on the material type of the process master wafer. The square resistance variation of N-type or P-type wafers is highly correlated with the process parameters of the process master wafer, ensuring that the electrical characteristics of the process master wafer and the process master wafer follow the same trend, thereby improving the relevance and accuracy of the monitoring results.

[0050] In some embodiments, as Figure 2 As shown, the radius of the monitoring wafer is r and the thickness is H, where H can be 600um. The wafer sizes from 2 inches to 8 inches cover the commonly used wafer specifications in current semiconductor manufacturing (such as 2 inches, 4 inches, 6 inches, and 8 inches). They are easy to obtain and handle and can be adapted to production lines and equipment of different sizes. The process wafer and the process positive wafer are the same size to ensure that both are subject to the same process conditions (such as ion beam scanning range and process uniformity) in the high-energy hydrogen ion implantation equipment. Larger wafers (such as 6 inches or 8 inches) can provide more measurement points and enhance the statistical reliability of square resistance data; smaller wafers (such as 2 inches or 4 inches) are suitable for small-scale production or R&D scenarios. Monitoring wafers of different sizes can evaluate process parameters through standardized measurement and analysis processes.

[0051] In the present invention application, firstly, the selection of N-type or P-type monitoring wafers can match the electrical characteristics of different types of process positive films, ensuring that the monitoring results are highly correlated with the process effects of the positive films, and is suitable for a variety of semiconductor manufacturing scenarios such as power devices, sensors and radiation-resistant chips. The size range of 2 inches to 8 inches covers the wafer specifications of current mainstream semiconductor production lines, and is compatible with a variety of high-energy hydrogen ion implantation equipment and production scenarios, enhancing the versatility and flexibility of the method; in addition, the use of N-type or P-type bare wafers as monitoring wafers does not require additional complex processes (such as epitaxial layer preparation), reducing material and preparation costs. The wafer size of 2 inches to 8 inches supports a variety of application scenarios from small-scale research and development to large-scale mass production, and can be adapted to existing production line equipment without the need for additional investment in dedicated equipment, and has strong process scalability.

[0052] Optionally, in step S200 , the range of the pre-injection impedance data is 60-100Ω / sq.

[0053] In some embodiments, the 60-100Ω / sq square resistance range corresponds to a certain doping concentration of semiconductor wafers (such as the lightly doped level commonly found in silicon wafers), which is suitable for monitoring the high-energy hydrogen ion implantation process. This data range ensures that the wafer has sufficient electrical sensitivity to produce a measurable square resistance change after implantation.

[0054] Optionally, in step S200 or step S400, the non-contact square resistance tester is an eddy current square resistance tester; and / or the non-contact square resistance tester measures the square resistance at 1-300 points.

[0055] In some embodiments, a non-contact square resistance tester, such as an eddy current square resistance tester or an optical induction eddy current square resistance tester, when the sample under test is close to the eddy current coil probe with alternating current of the eddy current square resistance tester, due to the effect of the alternating magnetic field on the coil, the process companion wafer under test will induce an eddy current electric field and generate a magnetic field in the opposite direction of the original magnetic field, and partially offset the original magnetic field, thereby causing the resistance and inductance of the detection coil to change, and then the square resistance value of the process companion wafer can be calculated, that is, it can effectively measure the square resistance change of N-type or P-type wafers, and is suitable for wafers of different doping types. During the measurement process, the square resistance tester interacts with the wafer through electromagnetic fields or photoelectric signals to obtain surface electrical characteristic data without considering the specific doping type of the wafer.

[0056] In some embodiments, the non-contact square resistance tester typically has an adjustable measurement area that can adapt to wafer sizes ranging from 2 inches to 8 inches. By measuring at multiple points on the wafer surface, the tester can obtain process uniformity data of square resistance and then evaluate the distribution consistency of the implantation process. For example, an eddy current square resistance tester typically supports multi-point scanning of the wafer surface and can generate a square resistance distribution map for evaluating the process uniformity of the high-energy hydrogen ion implantation process. The measurement results reflect the spatial variation of the electrical properties of the wafer surface and are directly related to the ion beam scanning method and scanning quality of the high-energy hydrogen ion implantation process.

[0057] In the present invention, the non-contact square resistance tester is applicable to both N-type and P-type wafers, and will not introduce measurement errors due to differences in doping type or wafer size. The measurement process avoids microcracks or surface damage that may be caused by traditional contact probes (such as the four-probe method), protects the integrity of the wafer, and can obtain high-precision square resistance data for wafers of different sizes through the non-contact tester. Combined with multi-point measurement and data analysis models, it can accurately evaluate the energy, dose and process uniformity of the implantation process. Through standardized square resistance range and efficient eddy current measurement technology, high-precision, low-cost, and real-time high-energy hydrogen ion implantation process monitoring is achieved.

[0058] Optionally, in step S300, the high energy hydrogen ion implantation process has an implantation energy range of 1 MeV-12 MeV and an implantation dose of 5E10 p / cm 2 -1 E15p / cm 2 .

[0059] In the present invention, firstly, the implantation energy range of 1MeV-12MeV covers the requirements from shallow to deep doping, and the dose range is 5E10p / cm2 -1 E15p / cm 2 It meets the needs of various applications from low-dose to high-dose doping. The wide energy and dose range allows precise control of the implantation depth and carrier concentration, enhances the sensitivity to changes in the sheet resistance of the process companion wafer, and improves the accuracy of the evaluation of the process parameters (energy, dose, process uniformity). It is suitable for scenarios such as power devices, sensors and radiation-resistant chips. In addition, with the non-contact sheet resistance measurement, wide-range process parameter changes can be accurately reflected through the sheet resistance data, avoiding destructive testing, protecting the integrity of the wafer, and providing efficient support for high-energy hydrogen ion implantation process monitoring.

[0060] Optionally, in step S500, the resistance data before injection include R1, R2, ..., Ri, ..., Rn, and the resistance data after injection include T1, T2, ..., Ti, ..., Tn. The resistance difference data TR1, TR2, ..., TRi, ..., TRn and the resistance standard deviation data E are calculated, where TRi and E are respectively:

[0061] TRi=Ti-Ri

[0062]

[0063] i=1, 2, 3, ..., n, where n is a positive integer. The square resistance difference data is used to evaluate the implantation energy and implantation dose, and the square resistance standard deviation data is used to evaluate the process uniformity.

[0064] In some embodiments, n ranges from 1 to 300, and the square resistance difference TRi is nonlinearly related to the implantation energy and dose. By establishing a database of square resistance difference TRi under standard implantation parameters, a quantitative evaluation of the implantation energy and implantation dose can be achieved, specifically including:

[0065] First, a bare wafer of the same material was used to perform multiple tests with known energies (e.g., 1MeV-12MeV) and doses (e.g., 5E10p / cm 2 -1 E15p / cm 2 ), measuring the sheet resistance data before and after the injection to obtain multiple sets of sheet resistance data before and after the injection, obtaining multiple sets of sheet resistance difference data, calculating the average value of each set of sheet resistance difference data, and establishing a three-dimensional relationship table of "injection energy-injection dose-average sheet resistance difference" or a mathematical model of the fitting surface;

[0066] Then, obtain the actual sheet resistance data of a certain process wafer before and after injection using a non-contact sheet resistance tester, and calculate the average value of the actual sheet resistance difference based on the actual sheet resistance data before and after injection;

[0067] Finally, the average value of the actual square resistance difference is substituted into the mathematical model, and the injection energy and injection dose of the current high-energy hydrogen ion injection are calculated using the interpolation method or not. This allows for non-contact quantitative evaluation of the high-energy hydrogen ion injection process parameters without damaging the wafer, which is suitable for online quality control scenarios.

[0068] In some embodiments, as Figure 3 、 Figure 4 As shown, multiple measurement points (e.g., 55 points) can be selected on the surface of the process wafer, usually arranged in a grid (e.g., 1mm spacing) to ensure coverage of the entire process wafer surface. The square resistance value is measured at each point, and the square resistance data is recorded. This data is organized into a two-dimensional graph, with the square resistance value of each point represented by color or numerical value to form a distribution map. For example, in gallium nitride (GaN) wafers, the square resistance mapping diagram is used to evaluate the process uniformity of the wafer. By analyzing the square resistance mapping diagram, abnormal areas such as high or low resistance areas can be identified, which may indicate defects, uneven doping, or process deviations.

[0069] In some embodiments, the points selected by the non-contact square resistance tester before injection are the same as the points selected by the non-contact square resistance tester after injection. The non-contact square resistance tester measures the square resistance of 55 points. The resistance data before injection include R1, R2, ..., Ri, ..., R55, and the resistance data after injection include T1, T2, ..., Ti, ..., T55. The square resistance difference data is calculated.

[0070] TR1, TR2, ..., TRi, ..., TR55 and the square resistance standard deviation data E, the process uniformity can be evaluated by the above standard deviation calculation.

[0071] In other embodiments, Figure 5 、 Figure 6 As shown, according to the square resistance data before injection and the square resistance data after injection, the square resistance Mapping diagram before injection and the square resistance Mapping diagram after injection can be obtained. The square resistance Mapping diagram is a two-dimensional or three-dimensional graphic display of the square resistance distribution on the surface of the process companion wafer. The square resistance can be measured at multiple points (for example, 55 points) on the surface of the process companion wafer, and these data can be plotted in two or three dimensions to intuitively show the change in resistivity on the entire surface. The square resistance Mapping diagram can clearly show the square resistance values of different areas on the material surface, thereby judging whether the process companion wafer is uniform before and after injection and identifying local high resistance or low resistance areas.

[0072] Optionally, step S500 further includes step S600: annealing the process wafer after the high-energy hydrogen ion implantation process to obtain an annealed process wafer, and recycling the annealed process wafer.

[0073] In some embodiments, annealing involves heating the wafer at high temperatures to repair lattice damage and defects caused by high-energy hydrogen ion implantation. Implantation introduces vacancies and hydrogen molecules, altering electrical properties (such as sheet resistance). Annealing diffuses and repairs defects, stabilizing or escaping hydrogen atoms, reducing interference with electrical properties and restoring the wafer to a near-initial state, allowing it to be reused for monitoring.

[0074] In some embodiments, after annealing, the process wafer is measured using a non-contact sheet resistance tester to ensure that its sheet resistance returns to the initial range (e.g., 60-100Ω / sq). If it returns, it is considered qualified and can be used to monitor the next high-energy hydrogen ion implantation process. Repeated recycling may lead to residual defects or surface contamination, so additional cleaning steps may be used to ensure that the wafer surface is free of impurities.

[0075] In the present invention application, firstly, the annealed process wafer is recycled after annealing, and the number of recycling times is increased to more than 10 times, which can reduce the consumption of new wafers, especially in large-scale production, and significantly save material costs. The semiconductor manufacturing industry has high consumables, and discarded wafers have a great impact on the environment. Annealing recycling reduces waste, meets the requirements of sustainable development, and reduces carbon footprint; in addition, it reduces the frequency of wafer replacement, simplifies the production process, and recycling can reduce downtime, repair the surface damage caused by high-energy hydrogen ion implantation, and extend the life of the process wafer. Annealing is also a universal process, which is applicable to a variety of materials such as silicon and silicon carbide, and is also applicable to different device types such as power devices and sensors.

[0076] Optionally, in step S600, the annealing equipment is a tube furnace; and / or the annealing atmosphere is high-purity nitrogen, and / or the annealing temperature is 550°C-800°C.

[0077] In some embodiments, annealing is a high-temperature heat treatment process, typically performed in a furnace or rapid thermal processing equipment. The temperature range depends on the material (eg, silicon, silicon carbide), typically 500-1200° C., and the time ranges from several minutes to several hours.

[0078] Those skilled in the art can understand that the various operations, methods, steps in the process, measures, and schemes discussed in the present invention application can be interchanged, changed, combined, or deleted; further, the various operations, methods, and other steps, measures, and schemes in the process discussed in the present invention application can also be interchanged, changed, rearranged, decomposed, combined, or deleted; further, the various operations, methods, and steps in the process disclosed in the present invention application in the prior art can also be interchanged, changed, rearranged, decomposed, combined, or deleted. The various technical features of the above embodiments can be arbitrarily combined. To make the description concise, not all possible combinations of the various technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification;

[0079] The embodiments described above only express several implementation methods of the embodiments of the present disclosure, and their descriptions are relatively specific and detailed, but they cannot be understood as limiting the patent scope of the embodiments of the present disclosure; it should be pointed out that for ordinary technicians in this field, without departing from the concept of the embodiments of the present disclosure, several variations and improvements can be made, which all fall within the protection scope of the embodiments of the present disclosure; therefore, the protection scope of the embodiments of the present disclosure should be based on the attached claims. As mentioned above, although the present invention application has been expressed and described with reference to specific preferred embodiments, it shall not be interpreted as limiting the present invention application itself. Various changes can be made to it in form and detail without departing from the spirit and scope of the present invention application defined in the attached claims.

[0080] The above description of the present invention and its embodiments is non-limiting. The drawings show only one embodiment of the present invention, and the actual structure is not limited thereto. In short, if a person skilled in the art is inspired by this and, without departing from the inventive purpose of the present invention, designs structures and embodiments similar to the technical solution without inventiveness, they shall fall within the scope of protection of the present invention.

Claims

1. A non-contact monitoring method for a high-energy hydrogen ion implantation process, characterized in that: include: Step S100: obtaining a monitoring wafer for monitoring a high-energy hydrogen ion implantation process of a wafer, wherein the monitoring wafer is a bare wafer that has not been subjected to the high-energy hydrogen ion implantation process, the wafer to be subjected to the high-energy hydrogen ion implantation process of the wafer is a process positive wafer, and the monitoring wafer is a process companion wafer for the high-energy hydrogen ion implantation process of the wafer; Step S200: Before the high-energy hydrogen ion implantation process, the sheet resistance of the process companion wafer is measured using a non-contact sheet resistance tester to obtain pre-implantation resistance data of the process companion wafer; Step S300: The process companion film and the process main film are simultaneously subjected to a high-energy hydrogen ion implantation process; Step S400: After the high-energy hydrogen ion implantation process of the process companion wafer, the sheet resistance of the process companion wafer after the high-energy hydrogen ion implantation process is measured using a non-contact sheet resistance tester to obtain the sheet resistance data of the process companion wafer after the implantation process; Step S5 00: Evaluate the implantation energy, implantation dose, and process uniformity of the high-energy hydrogen ion implantation process of the process wafer based on the pre-implantation resistance data of the process wafer and the post-implantation resistance data of the process wafer.

2. The non-contact monitoring method for a high-energy hydrogen ion implantation process according to claim 1, wherein in step S100, the monitored wafer is N-type or P-type; and / or the monitored wafer size ranges from 2 inches to 8 inches.

3. The non-contact monitoring method for high-energy hydrogen ion implantation process according to claim 2, characterized in that: In step S200 , the range of the front impedance data before injection is 60-100Ω / sq.

4. The non-contact monitoring method for high-energy hydrogen ion implantation process according to claim 3, characterized in that: In step S200 or step S400, the non-contact square resistance tester is an eddy current square resistance tester; and / or the non-contact square resistance tester measures the square resistance at 1-300 points.

5. The non-contact monitoring method for high-energy hydrogen ion implantation process according to claim 4, characterized in that: In step S300, the high energy hydrogen ion implantation process has an implantation energy range of 1 MeV-12 MeV and an implantation dose of 5E10 p / cm 2 -1E15p / cm 2 .

6. The non-contact monitoring method for high-energy hydrogen ion implantation process according to claim 5, characterized in that: In step S500, the square resistance data before injection include R1, R2, ..., Ri, ..., Rn, and the square resistance data after injection include T1, T2, ..., Ti, ..., Tn. The square resistance difference data TR1, TR2, ..., TRi, ..., TRn and the square resistance standard deviation data E are calculated. TRi and E are respectively: TRi=Ti-Ri i=1, 2, 3, ..., n, where n is a positive integer. The square resistance difference data is used to evaluate the implantation energy and implantation dose, and the square resistance standard deviation data is used to evaluate the process uniformity.

7. The non-contact monitoring method for high-energy hydrogen ion implantation process according to claim 6, characterized in that: After step S500 , the method further includes step S600 : annealing the process wafer after the high-energy hydrogen ion implantation process to obtain an annealed process wafer, and recycling the annealed process wafer.

8. The non-contact monitoring method for high-energy hydrogen ion implantation process according to claim 7, characterized in that: In step S600, the annealing equipment is a tube furnace.

9. The non-contact monitoring method for high-energy hydrogen ion implantation process according to claim 7, characterized in that: In step S600, the annealing atmosphere is high-purity nitrogen, and / or the annealing temperature is 550°C-800°C.

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