A cadmium telluride thin-film solar cell and its film defect repair method and film preparation method

Abstract

The present invention provides a cadmium telluride thin-film solar cell and a film defect repair method and film preparation method thereof. The film defect repair method is performed between P1 and P2 scribing, and includes sequentially performing laser repair and photoresist filling. The film defect repair method provided by the present invention organically combines laser repair and photoresist filling. First, optical inspection equipment is used to precisely locate defects in the film layer. The transparent conductive layer, window layer, and absorption layer at the defect location are then removed by laser. The laser-removed area of ​​the film defect is then filled with photoresist. A photoresist consistent with the color of the film is used to maintain consistency in appearance while preventing leakage. Ultimately, efficient and precise repair of film defects is achieved, effectively preventing local leakage anomalies in large-scale cadmium telluride thin-film cells, improving the conversion efficiency of cadmium telluride thin-film solar cells, and facilitating mass production of large-scale cadmium telluride thin-film solar cells.

Description

Technical Field

[0001] The present invention belongs to the technical field of battery manufacturing and relates to a cadmium telluride thin-film solar cell, and in particular to a cadmium telluride thin-film solar cell and a film defect repair method and a film preparation method thereof. Background Art

[0002] Thin-film solar cells are widely used in architecture, transportation, and other fields. However, during the production of cadmium telluride thin-film solar cells, microscopic defects such as pinholes and cracks often appear in the film layers (such as the photoelectric conversion layer and buffer layer) due to material defects and improper process control. These defects not only affect the cell's photoelectric conversion efficiency but can also cause leakage, shortening the battery's lifespan.

[0003] For the above-mentioned film defects of cadmium telluride thin-film solar cells, traditional film repair methods include:

[0004] (1) Chemical vapor deposition: In a gaseous environment, new semiconductor materials are generated in the defective area through chemical reactions to fill or cover the film defects. However, this method requires another layer of film to be deposited, and the increase in film thickness will affect the conversion efficiency of cadmium telluride thin-film solar cells and increase the coating cost.

[0005] (2) Annealing treatment: placing the cell in an annealing furnace for high-temperature treatment converts the unstable hydrogen in the film into stable hydrogen and improves the crystal structure and photoelectric performance of the film. However, this method will cause excessive annealing in areas without defects, thereby affecting the conversion efficiency of cadmium telluride thin-film solar cells and making it impossible to perform annealing accurately.

[0006] Therefore, how to provide a method for repairing film defects of cadmium telluride thin-film solar cells, achieve efficient and accurate repair of film defects, and improve the conversion efficiency of cadmium telluride thin-film solar cells has become an urgent problem that technical personnel in this field need to solve. Summary of the Invention

[0007] In view of the shortcomings of the existing technology, the purpose of the present invention is to provide a cadmium telluride thin-film solar cell and its film defect repair method and film preparation method, so as to achieve efficient and accurate repair of film defects and improve the conversion efficiency of cadmium telluride thin-film solar cells.

[0008] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:

[0009] In a first aspect, the present invention provides a method for repairing film defects of a cadmium telluride thin-film solar cell. The method is performed between P1 scribing and P2 scribing, and includes sequentially performing laser repair and photoresist filling.

[0010] The film defect repair method provided by the present invention organically combines laser repair and photoresist filling. First, a high-resolution optical detection system is used to precisely locate the defective transparent conductive layer, window layer, and absorption layer at the defective location using a laser to repair the tiny defects in the film, improving repair efficiency and accuracy. Then, a negative photoresist is used to fill deep into the pinholes, forming a dense insulating layer, completely eliminating the potential for leakage. After repair, the photoelectric conversion efficiency of the cadmium telluride thin-film solar cell is increased by 0.6-2%. This film defect repair method is highly compatible with existing cadmium telluride thin-film solar cell production processes and effectively solves the film defect problem in the mass production of large-scale cadmium telluride thin-film cells.

[0011] Preferably, the laser repair comprises automatic optical inspection (AOI inspection) and laser cleaning performed sequentially.

[0012] Preferably, the automatic optical inspection comprises: scanning the surface of the cadmium telluride thin film solar cell using a high-resolution optical inspection system, locating film defects and forming a defect map.

[0013] Preferably, the laser cleaning comprises: removing the transparent conductive layer, the window layer and the absorption layer at the defective position by laser according to the positioning result of the automatic optical detection.

[0014] Preferably, the photoresist filling includes sequentially coating photoresist, exposure processing, and development and cleaning.

[0015] Preferably, the photoresist used for the photoresist filling includes at least one of ArF photoresist, KrF photoresist, and AZ series photoresist.

[0016] Preferably, the photoresist coating comprises: uniformly coating the photoresist on the surface of the laser-repaired cadmium telluride thin-film solar cell, and ensuring that the height difference between the filled photoresist and the peripheral film thickness is within the range of ±4 μm.

[0017] Preferably, the exposure process includes: exposing the glass surface of the cadmium telluride thin film solar cell with ultraviolet light, so that the negative photoresist is retained and solidified in the laser repaired area to form an insulating layer to prevent leakage.

[0018] Preferably, the development and cleaning includes: removing excess photoresist, and cleaning and inspecting the laser repaired area to ensure that the filling effect of the photoresist meets the requirements.

[0019] In a second aspect, the present invention provides a method for preparing a film layer of a cadmium telluride thin-film solar cell, comprising depositing a transparent conductive layer, a window layer, and an absorption layer on the surface of a substrate in sequence, and then performing P1 scribing, P2 scribing, sputtering a back electrode, and P3 scribing in sequence.

[0020] Wherein, the film defect repairing method as described in the first aspect is performed between the P1 scribing and the P2 scribing.

[0021] In a third aspect, the present invention provides a cadmium telluride thin-film solar cell, which is prepared by the preparation method described in the second aspect, or the cadmium telluride thin-film solar cell is repaired by the film defect repair method described in the first aspect.

[0022] Compared with the prior art, the present invention has the following beneficial effects:

[0023] The film defect repair method provided by the present invention organically combines laser repair and photoresist filling. First, a high-resolution optical detection system is used to precisely locate the defective transparent conductive layer, window layer, and absorption layer at the defective location using a laser to repair the tiny defects in the film, improving repair efficiency and accuracy. Then, a negative photoresist is used to fill deep into the pinholes, forming a dense insulating layer, completely eliminating the potential for leakage. After repair, the photoelectric conversion efficiency of the cadmium telluride thin-film solar cell is increased by 0.6-2%. This film defect repair method is highly compatible with existing cadmium telluride thin-film solar cell production processes and effectively solves the film defect problem in the mass production of large-scale cadmium telluride thin-film cells. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 This is a photo of a defect map in the film defect repair method provided in Example 1;

[0025] Figure 2 This is a photo of the photoresist filling effect in the film defect repair method provided in Example 1;

[0026] Figure 3 This is a photo of the defect map in the film defect repair method provided in Example 2;

[0027] Figure 4 This is a photo of the photoresist filling effect in the film defect repair method provided in Example 2;

[0028] Figure 5 This is a photo of a defect map in the film defect repair method provided in Example 3;

[0029] Figure 6 This is a photo of the photoresist filling effect in the film defect repair method provided in Example 3;

[0030] Figure 7 This is a schematic diagram of the structure of the cadmium telluride thin film solar cell provided in Examples 4-6.

[0031] Wherein: 101 - glass substrate; 102 - transparent conductive layer; 103 - window layer; 104 - absorption layer; 105 - back electrode. DETAILED DESCRIPTION

[0032] The technical solution of the present invention is further described below by way of specific embodiments. It should be understood by those skilled in the art that the embodiments are merely to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0033] An embodiment of the present invention provides a method for repairing film defects of a cadmium telluride thin-film solar cell. The method is performed between P1 scribing and P2 scribing, and includes sequentially performing laser repair and photoresist filling.

[0034] The film defect repair method provided by the present invention organically combines laser repair and photoresist filling. First, a high-resolution optical detection system is used to precisely locate the defective transparent conductive layer, window layer, and absorption layer at the defective location using a laser to repair the tiny defects in the film, improving repair efficiency and accuracy. Then, a negative photoresist is used to fill deep into the pinholes, forming a dense insulating layer, completely eliminating the potential for leakage. After repair, the photoelectric conversion efficiency of the cadmium telluride thin-film solar cell is increased by 0.6-2%. This film defect repair method is highly compatible with existing cadmium telluride thin-film solar cell production processes and effectively solves the film defect problem in the mass production of large-scale cadmium telluride thin-film cells.

[0035] In certain embodiments, the laser repair comprises sequential automated optical inspection and laser cleaning.

[0036] In some embodiments, the automatic optical inspection includes: using a high-resolution optical inspection system to scan the surface of the cadmium telluride thin-film solar cell, locate film defects (such as pinholes, cracks, etc.) and form a defect map.

[0037] In some embodiments, the high-resolution optical detection system is specifically a confocal microscope (lateral resolution can reach 0.5μm, vertical resolution can reach 0.1μm), an atomic force microscope (resolution can reach nanometer level), an electron microscope (resolution can reach nanometer level) or an interference microscope (resolution can reach submicron level).

[0038] In some embodiments, the laser cleaning includes: removing the transparent conductive layer, the window layer, and the absorption layer at the defect location by laser according to the positioning result of the automatic optical detection.

[0039] In some embodiments, the laser is specifically 532 nm green light.

[0040] In some embodiments, the photoresist filling includes sequentially coating photoresist, exposure processing, and development and cleaning.

[0041] In some embodiments, the photoresist used for the photoresist filling includes at least one of ArF photoresist, KrF photoresist, and AZ series photoresist, wherein the AZ series photoresist can be any one of AZ-50XT, AZ-125nXT, and AZ-5214E.

[0042] In the present invention, the AZ series photoresist has good insulation and weather resistance, and has good adhesion to the film material.

[0043] In some embodiments, the color of the photoresist is the same as that of the thin film battery, for example, black or nearly black.

[0044] In some embodiments, the photoresist coating includes: uniformly coating the photoresist on the surface of the cadmium telluride thin-film solar cell after laser repair, and ensuring that the height difference between the filled photoresist and the peripheral film thickness is within the range of ±4μm, for example, it can be -4μm, -3μm, -2μm, -1μm, 0μm, 1μm, 2μm, 3μm or 4μm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0045] In some embodiments, the exposure process includes: exposing the glass surface of the cadmium telluride thin film solar cell with ultraviolet light, so that the negative photoresist is retained and solidified in the laser repaired area to form a dense insulating layer to prevent leakage.

[0046] In some embodiments, the development and cleaning includes: removing excess photoresist, and cleaning and inspecting the laser repaired area to ensure that the filling effect of the photoresist meets the requirements.

[0047] An embodiment of the present invention provides a method for preparing a film layer of a cadmium telluride thin-film solar cell, comprising sequentially depositing a transparent conductive layer, a window layer, and an absorption layer on the surface of a substrate, followed by sequentially performing P1 scribing, P2 scribing, sputtering a back electrode, and P3 scribing.

[0048] Wherein, the film defect repairing method described in any of the above embodiments is performed between the P1 scribing and the P2 scribing.

[0049] In the present invention, the P1 scribing, P2 scribing, and P3 scribing steps are performed at different stages of solar cell manufacturing. These steps are key steps in the solar cell manufacturing process and are used to form the conductive path and external structure of the cell.

[0050] Since P1 scribing, P2 scribing and P3 scribing are all routine steps for those skilled in the art in the solar cell manufacturing process, as long as the corresponding scribing objectives can be achieved, no particular limitation is imposed on the specific process parameters of each scribing step.

[0051] An embodiment of the present invention provides a cadmium telluride thin-film solar cell, which is manufactured using the preparation method described in any of the above embodiments, or the cadmium telluride thin-film solar cell is repaired using the film defect repair method described in any of the above embodiments.

[0052] In some embodiments, the cadmium telluride thin film solar cell includes a glass substrate, a transparent conductive layer (SnO2:F), a window layer (CdS), an absorption layer (CdTe), and a back electrode (Mo) that are stacked.

[0053] The numerical range described in the present invention includes not only the point values ​​listed above, but also any point values ​​between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values ​​included in the range.

[0054] Example 1

[0055] This embodiment provides a method for repairing film defects of a cadmium telluride thin-film solar cell. The method is performed between P1 scribing and P2 scribing, and specifically includes the following steps:

[0056] (1) Laser repair:

[0057] (1.1) Automatic optical inspection: Use an electron microscope (with a resolution of nanometers) to scan the surface of cadmium telluride thin film solar cells, locate film defects and form Figure 1 Defect map shown;

[0058] (1.2) Laser cleaning: Use optical inspection equipment to accurately locate defects in the film layer, and then use 532nm green light to remove the transparent conductive layer 102, window layer 103 and absorption layer 104 at the defect location (see Figure 7 ).

[0059] (2) Photoresist filling:

[0060] (2.1) Photoresist coating: Evenly coat AZ-50XT photoresist on the surface of the laser-repaired cadmium telluride thin-film solar cell, ensuring that the height difference between the filled photoresist and the surrounding film thickness is within the range of ±4μm;

[0061] (2.2) Exposure treatment: UV light is used to expose the glass surface of the cadmium telluride thin-film solar cell, so that the negative photoresist is retained and solidified in the laser-repaired area, forming a dense insulating layer to prevent leakage;

[0062] (2.3) Development and cleaning: Remove excess photoresist and clean and inspect the laser repaired area. See the relevant inspection photos for details. Figure 2, fully meeting the filling effect requirements of photoresist.

[0063] Example 2

[0064] This embodiment provides a method for repairing film defects of a cadmium telluride thin-film solar cell. The method is performed between P1 scribing and P2 scribing, and specifically includes the following steps:

[0065] (1) Laser repair:

[0066] (1.1) Automatic optical inspection: Use an electron microscope (with a resolution of nanometers) to scan the surface of cadmium telluride thin film solar cells, locate film defects and form Figure 3 Defect map shown;

[0067] (1.2) Laser cleaning: Use optical inspection equipment to accurately locate defects in the film layer, and then use 532nm green light to remove the transparent conductive layer 102, window layer 103 and absorption layer 104 at the defect location (see Figure 7 ).

[0068] (2) Photoresist filling:

[0069] (2.1) Photoresist coating: Evenly coat AZ-125nXT photoresist on the surface of the laser-repaired cadmium telluride thin-film solar cell, ensuring that the height difference between the filled photoresist and the surrounding film is within the range of ±4μm;

[0070] (2.2) Exposure treatment: UV light is used to expose the glass surface of the cadmium telluride thin-film solar cell, so that the negative photoresist is retained and solidified in the laser-repaired area, forming a dense insulating layer to prevent leakage;

[0071] (2.3) Development and cleaning: Remove excess photoresist and clean and inspect the laser repaired area. See the relevant inspection photos for details. Figure 4 , fully meeting the filling effect requirements of photoresist.

[0072] Example 3

[0073] This embodiment provides a method for repairing film defects of a cadmium telluride thin-film solar cell. The method is performed between P1 scribing and P2 scribing, and specifically includes the following steps:

[0074] (1) Laser repair:

[0075] (1.1) Automatic optical inspection: Use an electron microscope (with a resolution of nanometers) to scan the surface of cadmium telluride thin film solar cells, locate film defects and form Figure 5 Defect map shown;

[0076] (1.2) Laser cleaning: Use optical inspection equipment to accurately locate defects in the film layer, and then use 532nm green light to remove the transparent conductive layer 102, window layer 103 and absorption layer 104 at the defect location (see Figure 7 ).

[0077] (2) Photoresist filling:

[0078] (2.1) Photoresist coating: Evenly coat AZ-5214E ​​photoresist on the surface of the laser-repaired cadmium telluride thin-film solar cell, ensuring that the height difference between the filled photoresist and the surrounding film thickness is within the range of ±4μm;

[0079] (2.2) Exposure treatment: UV light is used to expose the glass surface of the cadmium telluride thin-film solar cell, so that the negative photoresist is retained and solidified in the laser-repaired area, forming a dense insulating layer to prevent leakage;

[0080] (2.3) Development and cleaning: Remove excess photoresist and clean and inspect the laser repaired area. See the relevant inspection photos for details. Figure 6 , fully meeting the filling effect requirements of photoresist.

[0081] Example 4

[0082] This embodiment provides a cadmium telluride thin film solar cell and a method for preparing the film layer thereof, such as Figure 7 As shown, the cadmium telluride thin film solar cell includes a stacked glass substrate 101 (ultra-white float glass), a transparent conductive layer 102 (SnO2:F), a window layer 103 (CdS), an absorption layer 104 (CdTe) and a back electrode 105 (Mo).

[0083] The thickness of the glass substrate 101 is 3.2 mm, the thickness of the transparent conductive layer 102 is 400 nm, the thickness of the window layer 103 is 100 nm, the thickness of the absorption layer 104 is 4 mm, and the thickness of the back electrode 105 is 200 nm.

[0084] The preparation method provided in this embodiment includes sequentially depositing a transparent conductive layer 102, a window layer 103 and an absorption layer 104 on the surface of a glass substrate 101, and then sequentially performing P1 scribing, P2 scribing, sputtering a back electrode 105 and P3 scribing.

[0085] Wherein, the film defect repair method as described in Example 1 is performed between the P1 scribing and the P2 scribing.

[0086] Furthermore, the transparent conductive layer 102 is produced by chemical vapor deposition, and the window layer 103 and the absorption layer 104 are produced by close-space sublimation. Since the specific preparation processes for each of the aforementioned layers have no significant impact on the performance of the final product, the specific steps and parameters of each process are not detailed here.

[0087] Specifically, the conditions for the P1, P2 and P3 scribing are shown in Table 1 below:

[0088] Table 1

[0089] Craftsmanship Laser wavelength (nm) Laser power (W) Frequency (Khz) Speed ​​(mm / s) Scribing film P1 scribing 532 1.8 300 200 Absorption layer + window layer + transparent conductive layer, without damaging the glass substrate P2 scoring 532 2.7 800 400 Absorption layer + window layer, without damaging the transparent conductive layer P3 scoring 532 1.5 300 100 Back electrode + absorption layer + window layer, without damaging the transparent conductive layer

[0090] Example 5

[0091] This embodiment provides a cadmium telluride thin film solar cell and a method for preparing the film layer thereof, such as Figure 7 As shown, the cadmium telluride thin film solar cell includes a stacked glass substrate 101 (ultra-white float glass), a transparent conductive layer 102 (SnO2:F), a window layer 103 (CdS), an absorption layer 104 (CdTe) and a back electrode 105 (Mo).

[0092] The thickness of the glass substrate 101 is 3.2 mm, the thickness of the transparent conductive layer 102 is 400 nm, the thickness of the window layer 103 is 100 nm, the thickness of the absorption layer 104 is 4 mm, and the thickness of the back electrode 105 is 200 nm.

[0093] The preparation method provided in this embodiment includes sequentially depositing a transparent conductive layer 102, a window layer 103 and an absorption layer 104 on the surface of a glass substrate 101, and then sequentially performing P1 scribing, P2 scribing, sputtering a back electrode 105 and P3 scribing.

[0094] Wherein, the film defect repair method as described in Example 2 is performed between the P1 scribing and the P2 scribing.

[0095] Furthermore, the transparent conductive layer 102 is produced by chemical vapor deposition, and the window layer 103 and the absorption layer 104 are produced by close-space sublimation. Since the specific preparation processes for each of the aforementioned layers have no significant impact on the performance of the final product, the specific steps and parameters of each process are not detailed here.

[0096] The conditions for the P1, P2 and P3 scribing are the same as those in Example 4, so they are not described here in detail.

[0097] Example 6

[0098] This embodiment provides a cadmium telluride thin film solar cell and a method for preparing the film layer thereof, such as Figure 7As shown, the cadmium telluride thin film solar cell includes a stacked glass substrate 101 (ultra-white float glass), a transparent conductive layer 102 (SnO2:F), a window layer 103 (CdS), an absorption layer 104 (CdTe) and a back electrode 105 (Mo).

[0099] The thickness of the glass substrate 101 is 3.2 mm, the thickness of the transparent conductive layer 102 is 400 nm, the thickness of the window layer 103 is 100 nm, the thickness of the absorption layer 104 is 4 mm, and the thickness of the back electrode 105 is 200 nm.

[0100] The preparation method provided in this embodiment includes sequentially depositing a transparent conductive layer 102, a window layer 103 and an absorption layer 104 on the surface of a glass substrate 101, and then sequentially performing P1 scribing, P2 scribing, sputtering a back electrode 105 and P3 scribing.

[0101] Wherein, the film defect repair method described in Example 3 is performed between the P1 scribing and the P2 scribing.

[0102] Furthermore, the transparent conductive layer 102 is produced by chemical vapor deposition, and the window layer 103 and the absorption layer 104 are produced by close-space sublimation. Since the specific preparation processes for each of the aforementioned layers have no significant impact on the performance of the final product, the specific steps and parameters of each process are not detailed here.

[0103] The conditions for the P1, P2 and P3 scribing are the same as those in Example 4, so they are not described here in detail.

[0104] Comparative Example 1

[0105] This comparative example provides a cadmium telluride thin-film solar cell and a method for preparing the film layer thereof. Except that the laser repair in the film defect repair method is not performed between P1 and P2 scribing, and photoresist filling is performed separately, the remaining steps and conditions are the same as those in Example 4 and are therefore not described in detail here.

[0106] Comparative Example 2

[0107] This comparative example provides a cadmium telluride thin-film solar cell and a method for preparing its film layer. Except that the photoresist filling in the film defect repair method is not performed between P1 and P2 scribing, and laser repair is performed separately, the remaining steps and conditions are the same as those in Example 4 and are therefore not described here.

[0108] Comparative Example 3

[0109] This comparative example provides a cadmium telluride thin film solar cell and a method for preparing the film layer thereof. Except that the film layer defect repair method is not performed between P1 and P2 scribing, the remaining steps and conditions are the same as those in Example 4 and are therefore not described in detail here.

[0110] Performance Testing

[0111] The photoelectric conversion efficiency of the cadmium telluride thin film solar cells obtained in Examples 4-6 and Comparative Examples 1-3 was tested respectively. The specific test conditions were: using AM1.5 standard spectrum, light intensity of 1000 W / m², and test temperature of 25°C ± 2°C.

[0112] The relevant test results are shown in Table 2 below.

[0113] Table 2

[0114] Cadmium telluride thin film solar cells Photoelectric conversion efficiency (%) Example 4 19.01% Example 5 18.68% Example 6 18.88% Comparative Example 1 18.08% Comparative Example 2 17.76% Comparative Example 3 17.01%

[0115] As shown in Table 2, the conversion efficiency of cadmium telluride thin-film solar cells that have undergone film layer repair and those that have not undergone film layer repair is compared. The conversion efficiency of cadmium telluride thin-film solar cells that have undergone film layer repair can be improved by an average of 0.6-2%.

[0116] As can be seen, the film defect repair method provided by the present invention organically combines laser repair and photoresist filling. First, optical inspection equipment is used to accurately locate the defects in the film layer. The transparent conductive layer, window layer, and absorption layer at the defect location are then removed by laser. The laser-removed area of ​​the film defect is then filled with photoresist. A photoresist that matches the color of the film is used to maintain consistency in appearance. This prevents leakage and completely eliminates the potential leakage risk. After repair, the photoelectric conversion efficiency of the cadmium telluride thin-film solar cell is increased by 0.6-2%. The above-mentioned film defect repair method is highly compatible with the existing cadmium telluride thin-film solar cell production process and effectively solves the film defect problem in the mass production of large-scale cadmium telluride thin-film cells.

[0117] The applicant declares that the above is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention fall within the scope of protection and disclosure of the present invention.

Claims

1. A method for repairing film defects of cadmium telluride thin-film solar cells, characterized in that: The film defect repair method is performed between P1 scribing and P2 scribing, including laser repair and photoresist filling performed sequentially; Wherein, the laser repair comprises automatic optical inspection and laser cleaning performed sequentially; The automatic optical inspection includes: using a high-resolution optical inspection system to scan the surface of the cadmium telluride thin film solar cell, locate film defects and form a defect map; The laser cleaning includes: removing the transparent conductive layer, the window layer and the absorption layer at the defective position by laser according to the positioning result of the automatic optical detection.

2. The film defect repairing method according to claim 1, characterized in that: The photoresist filling includes sequentially coating photoresist, exposure treatment, and development and cleaning; The photoresist used for the photoresist filling includes at least one of ArF photoresist, KrF photoresist, and AZ series photoresist.

3. The film defect repairing method according to claim 2, characterized in that: The photoresist coating comprises: uniformly coating the photoresist on the surface of the laser-repaired cadmium telluride thin film solar cell, and ensuring that the height difference between the filled photoresist and the peripheral film thickness is within the range of ±4 μm.

4. The film defect repairing method according to claim 3, characterized in that: The exposure process includes: using ultraviolet light to expose the glass surface of the cadmium telluride thin film solar cell, so that the negative photoresist is retained and solidified in the laser repaired area to form an insulating layer.

5. The film defect repairing method according to claim 4, characterized in that: The development and cleaning process includes removing excess photoresist and cleaning and inspecting the laser repaired area.

6. A method for preparing a film layer of a cadmium telluride thin-film solar cell, comprising sequentially depositing a transparent conductive layer, a window layer, and an absorption layer on the surface of a substrate, followed by sequentially performing P1 scribing, P2 scribing, sputtering a back electrode, and P3 scribing, wherein: The film defect repairing method according to any one of claims 1 to 5 is performed between the P1 scribing and the P2 scribing.

7. A cadmium telluride thin film solar cell, characterized in that: The cadmium telluride thin-film solar cell is manufactured by the preparation method according to claim 6, or the cadmium telluride thin-film solar cell is repaired by the film defect repair method according to any one of claims 1 to 5.

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