Plasma processing apparatus

Abstract

A plasma processing apparatus (100) is provided with: a vacuum container (1); the antenna 2 is arranged outside the vacuum container 1; a dielectric plate (7) that closes an opening (1x) formed at a position of the vacuum container (1) facing the antenna (2); and a distance adjustment mechanism (8) that adjusts the distance between the antenna (2) and the dielectric plate (7), the distance adjustment mechanism (8) having: an inclined surface (81a) that is provided between the antenna (2) and the dielectric plate (7) and that is in contact with the lower side of the antenna (2); and a movement mechanism (82) that adjusts the distance between the antenna (2) and the dielectric plate (7) by moving the inclined surface (81a) in a direction intersecting the longitudinal direction of the antenna (2).

Description

Technical Field

[0001] The present invention relates to a plasma processing device for processing an object using plasma. Background Art

[0002] A plasma processing apparatus has been proposed in the past. This apparatus generates an inductively coupled plasma (ICP) by passing a high-frequency current through an antenna, generating an induced electric field. This inductively coupled plasma is then used to process substrates and other workpieces. Patent Document 1 discloses a plasma processing apparatus in which an antenna is positioned outside a vacuum chamber. The high-frequency magnetic field generated by the antenna is transmitted into the chamber through a dielectric plate that blocks an opening in the chamber facing the antenna, thereby generating plasma within the chamber.

[0003] In this type of plasma processing device, the position of the antenna is set so as to satisfy the following formula (1) in order to make the thickness of the dielectric plate thick enough to withstand the differential pressure during vacuum processing, and to satisfy the following formula (2) in order to efficiently supply the high-frequency magnetic field generated by the antenna to the vacuum container.

[0004] hD / 2>0.7 (1)

[0005] 15≧hD / 2(2)

[0006] Furthermore, h is the distance (mm) between the central axis of the antenna and the surface of the metal plate on the antenna side, and D is the diameter (mm) of the antenna.

[0007] Prior art literature

[0008] Patent Literature

[0009] Patent Document 1: Japanese Patent Application Laid-Open No. 2020-198282 Summary of the Invention

[0010] Problems to be solved by the invention

[0011] However, the density of the plasma generated within the vacuum container varies depending on the distance between the antenna and the vacuum container. Furthermore, the plasma generated within the vacuum container diffuses toward the ends of the vacuum container and disappears there, resulting in variations in the plasma density along the long side of the antenna. In particular, the plasma density is higher at the center of the vacuum container and lower at the ends along the long side of the antenna. Therefore, in order to achieve a uniform plasma density along the long side of the antenna, the distance between the antenna and the vacuum container needs to be adjusted. However, in the plasma processing apparatus described above, since the distance between the antenna and the vacuum container is fixed, the plasma density along the long side of the antenna becomes uneven.

[0012] The present invention has been made in view of such problems, and a main object of the present invention is to achieve uniformity of plasma density in the longitudinal direction of the antenna when the antenna is arranged outside a vacuum container.

[0013] Technical means to solve the problem

[0014] That is, the plasma processing apparatus of the present invention is characterized in that it includes: a vacuum container; an antenna arranged outside the vacuum container; a dielectric plate that blocks an opening formed in the vacuum container at a position facing the antenna; and a distance adjustment mechanism that adjusts the distance between the antenna and the dielectric plate, the distance adjustment mechanism having: an inclined surface arranged between the antenna and the dielectric plate and in contact with the lower side of the antenna; and a moving mechanism that adjusts the distance between the antenna and the dielectric plate by moving the inclined surface in a direction intersecting the longitudinal direction of the antenna.

[0015] With this structure, the antenna moves along the inclined surface as the inclined surface moves, causing the distance between the antenna and the dielectric plate to change. Therefore, by adjusting the distance between the antenna and the dielectric plate using the movement of the inclined surface, the plasma density within the vacuum container can be adjusted, thereby achieving uniform plasma density along the longitudinal direction of the antenna.

[0016] Preferably, the distance adjustment mechanism includes a pair of inclined surfaces that face each other and are alternately arranged, and the moving mechanism adjusts the distance between the antenna and the dielectric plate by increasing or decreasing the distance between the pair of inclined surfaces.

[0017] With this structure, when the inclined surface moves toward the antenna, the antenna moves while being sandwiched between the pair of inclined surfaces. Therefore, the antenna easily moves along the inclined surface, and the distance between the antenna and the dielectric plate can be adjusted more accurately.

[0018] Ideally, the pair of inclined surfaces are respectively formed on a pair of inclined members, and the moving mechanism increases or decreases the distance between the pair of inclined members by a screw mechanism.

[0019] With this structure, the distance between the pair of inclined members increases or decreases according to the rotation of the screw mechanism. Therefore, the distance between the antenna and the dielectric plate can be precisely adjusted by determining the relationship between the amount of rotation of the screw mechanism and the distance between the pair of inclined surfaces.

[0020] As a specific form of the threaded mechanism, it can be considered to have: a common shaft member that connects the pair of inclined members; a right-hand threaded mechanism that is interposed between the shaft member and one of the inclined members; and a left-hand threaded mechanism that is interposed between the shaft member and the other inclined member.

[0021] With this structure, when the screw mechanism is rotated, the pair of inclined surfaces move toward or away from the antenna through the right-hand screw mechanism and the left-hand screw mechanism, so the plasma density can be adjusted by increasing or decreasing the distance between the pair of inclined surfaces.

[0022] Preferably, the inclined surface is planar.

[0023] With this structure, the distance between the antenna and the dielectric plate is proportional to the movement of the inclined surface, so the distance between the antenna and the dielectric can be adjusted more easily than when the inclined surface is non-planar.

[0024] An example of a structure is one in which the angle formed by the inclined surface and the outer surface of the dielectric plate is 20 degrees or less.

[0025] With this structure, since the slope of the inclined surface is gentle, the distance between the antenna and the dielectric plate can be finely adjusted relative to the movement of the inclined surface, thereby finely adjusting the plasma density. Furthermore, the lower limit of the angle between the inclined surface and the outer surface of the dielectric plate is, for example, 1 degree.

[0026] The plasma processing apparatus may further include a floating prevention mechanism configured to prevent the antenna from floating from the inclined surface.

[0027] With this structure, the antenna can be prevented from moving away from the inclined surface as the inclined surface moves. Therefore, the antenna can more accurately follow the movement of the inclined surface, thereby adjusting the plasma density more accurately.

[0028] In an example of a configuration, the distance adjustment mechanism further includes a contact prevention portion connected to a lower end of the inclined surface to prevent the antenna from contacting the dielectric plate.

[0029] With this structure, even when the antenna is provided at the lower end of the inclined surface, the antenna is provided away from the dielectric plate, thereby preventing a short circuit from the antenna to the dielectric plate.

[0030] The following structure can be cited: the antenna includes: a plurality of metal conductors; and one or more bent portions, wherein these metal conductors are connected and bent by the distance adjustment mechanism.

[0031] With this structure, the distance between the antenna and the dielectric plate varies with the movement of the inclined surface at the portion of the antenna where the bend is provided and at other portions of the antenna, thereby making the plasma density more uniform in the longitudinal direction of the antenna.

[0032] An example of a configuration is to further include: a light emission intensity detection unit configured to detect light emission intensity of plasma generated in the vacuum container; and a control unit configured to control the moving mechanism based on the light emission intensity.

[0033] With this structure, the inclined surface moves based on the detected light emission intensity of the plasma, so that plasma can be generated in the vacuum container and the plasma density can be uniformly controlled.

[0034] Effects of the Invention

[0035] According to the present invention thus constituted, when the antenna is arranged outside the vacuum container, it is possible to achieve uniformity in the plasma density within the vacuum container relative to the longitudinal direction of the antenna. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] [ Figure 1 ] is a cross-sectional view schematically showing the structure of a plasma processing device according to one embodiment.

[0037] [ Figure 2 ] is a plan view of the structure near the magnetic field transmission window of the embodiment observed from the outside of the vacuum container.

[0038] [ Figure 3 ] is a cross-sectional view of the structure near the magnetic field transmission window of the embodiment observed from the long side direction of the antenna.

[0039] [ Figure 4 ] is a graph showing the relationship between the distance between a pair of inclined members and the distance between the antenna and the dielectric plate in the embodiment.

[0040] [ Figure 5 ] is a graph showing the relationship between the distance between the antenna and the dielectric plate and the plasma luminescence intensity of the embodiment.

[0041] [ Figure 6] is a graph showing the relationship between the distance between the antenna and the dielectric plate and the plasma luminescence intensity of the embodiment.

[0042] [ Figure 7 ] is a plan view of the structure near the magnetic field transmission window of another embodiment observed from the outside of the vacuum container.

[0043] [ Figure 8 ] is a cross-sectional view of the structure near the magnetic field transmission window of another embodiment observed from the long side direction of the antenna.

[0044] [ Figure 9 ] is a cross-sectional view of the structure near the magnetic field transmission window of another embodiment observed from the long side direction of the antenna.

[0045] [ Figure 10 ] is a plan view of the structure near the magnetic field transmission window of another embodiment observed from the outside of the vacuum container.

[0046] [ Figure 11 ] is a schematic diagram showing the structure near the magnetic field transmission window of another embodiment.

[0047] [ Figure 12 ] is to Figure 11 An enlarged stereogram of a portion enlarged by a dotted line. DETAILED DESCRIPTION

[0048] An embodiment of the plasma processing apparatus of the present invention is described below with reference to the accompanying drawings. In each of the following figures, for ease of understanding, the following diagrams may be schematically depicted with appropriate omissions or exaggerations. Identical components are denoted by the same reference numerals, and their descriptions are omitted as appropriate.

[0049] <Device Structure>

[0050] The plasma processing apparatus 100 of this embodiment uses an inductively coupled plasma P to process a substrate O. Here, the substrate O is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic electroluminescence (EL) display, or a flexible substrate for a flexible display. Furthermore, the processing performed on the substrate O includes, for example, film formation using plasma chemical vapor deposition (CVD), etching, ashing, sputtering, and the like.

[0051] In addition, the plasma processing device 100 is also called a plasma CVD device when film formation is performed by the plasma CVD method, is also called a plasma etching device when etching is performed, is also called a plasma ashing device when ashing is performed, and is also called a plasma sputtering device when sputtering is performed.

[0052] Specifically, if Figure 1 As shown, plasma processing apparatus 100 includes a vacuum vessel 1 that is evacuated and into which a gas is introduced; an antenna 2 that is disposed outside vacuum vessel 1; and a high-frequency power supply 3 that applies a high frequency to antenna 2. In this configuration, the high frequency power supply 3 applies a high frequency to antenna 2, causing a high-frequency current IR to flow through antenna 2, thereby generating an induced electric field within vacuum vessel 1 and generating inductively coupled plasma P.

[0053] The vacuum container 1 is a container made of metal, for example, and has an opening 1x formed in its wall (here, the upper wall 1a) extending through the wall in the thickness direction. The vacuum container 1 is electrically grounded, and its interior is evacuated by a vacuum exhaust device 4.

[0054] In addition, gas is introduced into the vacuum container 1, for example, via a flow rate regulator (not shown) or one or more gas inlet ports 11 provided in the vacuum container 1. The gas may be a gas corresponding to the processing content to be performed on the substrate O. For example, when a film is formed on the substrate by a plasma CVD method, the gas is a raw material gas or a gas diluted with a dilution gas (e.g., H2). To give further specific examples, when the raw material gas is SiH4, a Si film can be formed on the substrate; when the raw material gas is SiH4+NH3, a SiN film can be formed on the substrate; when the raw material gas is SiH4+O2, a SiO2 film can be formed on the substrate; and when the raw material gas is SiF4+N2, a SiN:F film (silicon nitride fluoride film) can be formed on the substrate.

[0055] A substrate holder 5 is provided within the vacuum container 1 to hold a substrate O. As in the example described above, a bias voltage may be applied to the substrate holder 5 from a bias power supply 12. The bias voltage may be, for example, a negative DC voltage or a negative pulse voltage, but is not limited thereto. This bias voltage can be used to control the energy of positive ions in the plasma P incident on the substrate O, thereby controlling the crystallinity of the film formed on the surface of the substrate O. A heater 51 may be provided within the substrate holder 5 to heat the substrate O.

[0056] like Figure 1 As shown, the antenna 2 is arranged so as to face the opening 1x formed in the vacuum container 1. The number of antennas 2 is not limited to one, and a plurality of antennas 2 may be provided.

[0057] The high-frequency power supply 3 can flow a high-frequency current IR into the antenna 2 via the matching circuit 31. The frequency of the high-frequency power is, for example, generally 13.56 MHz, but is not limited thereto and can be changed as appropriate.

[0058] The plasma processing apparatus 100 further includes: a slit plate 6 for blocking an opening 1x formed in a wall (upper wall 1a) of the vacuum container 1 from the outside of the vacuum container 1; and a dielectric plate 7 for blocking a slit opening 6x formed in the slit plate 6 from the outside of the vacuum container 1.

[0059] The slit plate 6 allows the high-frequency magnetic field generated by the antenna 2 to penetrate the vacuum vessel 1 and prevents the electric field from entering the interior of the vacuum vessel 1 from outside the vacuum vessel 1. Specifically, the slit plate 6 is a flat plate having a plurality of slit openings 6x formed along the longitudinal direction of the antenna 2, extending through the slit plate 6 in the thickness direction. The slit plate 6 preferably has a higher mechanical strength than the dielectric plate 7 described later and preferably has a greater thickness than the dielectric plate 7. Furthermore, when viewed in the thickness direction, the plurality of slit openings 6x are parallel to each other and formed so as to intersect (specifically, be orthogonal to) the antenna 2. The plurality of slit openings 6x all have the same shape (specifically, a rectangular shape when viewed from above), and their length (width) along the longitudinal direction of the antenna 2 is, for example, not less than 5 mm and not more than 30 mm, but is not limited thereto.

[0060] More specifically, the slit plate 6 is manufactured by rolling (e.g., cold rolling or hot rolling) a metal material such as one metal selected from the group consisting of Cu, Al, Zn, Ni, Sn, Si, Ti, Fe, Cr, Nb, C, Mo, W, or Co, or an alloy thereof (e.g., a stainless steel alloy, an aluminum alloy, etc.), and has a thickness of approximately 5 mm. However, the manufacturing method and thickness are not limited to these and may be appropriately modified according to specifications.

[0061] The slit plate 6 is larger than the opening 1x of the vacuum container 1 in a plan view and blocks the opening 1x while being supported by the upper wall 1a. A sealing member C such as an O-ring or a gasket is interposed between the slit plate 6 and the upper wall 1a (see Figure 1 ), which are vacuum sealed.

[0062] The dielectric plate 7 is provided on an outer surface 61 of the slit plate 6 facing the outside of the vacuum vessel 1 (the back surface of the inner surface facing the inside of the vacuum vessel 1 ) to block the slit opening 6 x of the slit plate 6 .

[0063] The dielectric plate 7 is entirely composed of a dielectric material and is flat in shape. Examples include ceramics such as alumina, silicon carbide, and silicon nitride; inorganic materials such as quartz glass and alkali-free glass; and resin materials such as fluororesins (e.g., Teflon). To reduce dielectric loss, the material constituting the dielectric plate 7 preferably has a dielectric loss tangent of 0.01 or less, and more preferably 0.005 or less.

[0064] Here, the thickness of the dielectric plate 7 is smaller than that of the slit plate 6, but this is not limiting. The dielectric plate 7 can be made thinner as long as it has sufficient strength to withstand the differential pressure between the inside and outside of the vacuum vessel 1, which is applied through the slit openings 6x when the vacuum vessel 1 is evacuated. The thickness can be appropriately set based on specifications such as the number and length of the slit openings 6x. However, from the perspective of shortening the distance between the antenna 2 and the vacuum vessel 1, a thinner thickness is preferred.

[0065] With the above configuration, the slit plate 6 and the dielectric plate 7 function as a magnetic field transmission window W that transmits the magnetic field generated by the antenna 2. Specifically, when a high frequency is applied to the antenna 2 from the high-frequency power supply 3, the high-frequency magnetic field generated by the antenna 2 passes through the magnetic field transmission window W including the slit plate 6 and the dielectric plate 7 and is formed (supplied) into the vacuum chamber 1. This generates an induced electric field in the space within the vacuum chamber 1, generating an inductively coupled plasma P.

[0066] Moreover, if Figures 1 to 3 As shown, the plasma processing apparatus of this embodiment further includes a distance adjustment mechanism 8 for adjusting the distance between the antenna 2 and the dielectric plate 7. Specifically, the distance adjustment mechanism 8 includes an inclined surface 81a disposed between the antenna 2 and the dielectric plate 7 and in contact with the bottom side of the antenna 2; and a moving mechanism 82 for adjusting the distance between the antenna 2 and the dielectric plate 7 by moving the inclined surface 81a in a direction intersecting the longitudinal direction of the antenna 2.

[0067] Inclined surface 81a slopes downward from antenna 2 toward outer surface 71 of dielectric plate 7. Specifically, inclined surface 81a is planar, and the angle between inclined surface 81a and outer surface 71 of dielectric plate 7 is preferably 20 degrees or less. In this embodiment, the angle is 20 degrees.

[0068] Furthermore, the distance adjustment mechanism 8 includes a pair of inclined surfaces 81a, with the inclined surfaces 81a arranged alternately facing each other. In this embodiment, the pair of inclined surfaces 81a are formed on a pair of inclined members 81A and 81B, respectively. Specifically, one inclined surface 81a is formed on one inclined member 81A, while two inclined surfaces 81a are formed on the other inclined member 81B, parallel to and spaced apart by a predetermined distance along the longitudinal direction of the antenna 2. The inclined surface 81a formed on one inclined member 81A is positioned so as to be sandwiched between the two inclined surfaces 81a formed on the other inclined member 81B.

[0069] Here, a portion of the pair of inclined members 81A, 81B is, for example, a substantially triangular prism, one of the side surfaces of which forms an inclined surface 81a. Furthermore, the pair of inclined members 81A, 81B are entirely made of insulating material to prevent short circuits caused by contact with the antenna 2.

[0070] The moving mechanism 82 adjusts the distance between the antenna 2 and the dielectric plate 7 by increasing or decreasing the distance between the pair of inclined surfaces 81a. Specifically, the moving mechanism 82 is formed of a screw mechanism, and as the screw rotates, the distance between the pair of inclined members 81A and 81B is increased or decreased in a direction intersecting the longitudinal direction of the antenna 2 (specifically, a direction perpendicular to the longitudinal direction).

[0071] In this embodiment, the moving mechanism 82 includes a common shaft member 821 connecting the pair of inclined members 81A and 81B; a right-hand thread mechanism 822 interposed between the shaft member 821 and one of the inclined members 81A; and a left-hand thread mechanism 823 interposed between the shaft member 821 and the inclined member 81B. Furthermore, the moving mechanism 82 is entirely constructed of an insulating material to prevent short circuits caused by contact with the antenna 2.

[0072] The shaft member 821 is disposed between the pair of inclined members 81A and 81B and has an elongated shape. In this embodiment, the shaft member 821 is disposed above the antenna 2 and is located directly above the inclined surface 81a of one of the inclined members 81A.

[0073] The right-hand thread mechanism 822 comprises a right external thread 822a formed at one end of the shaft member 821, and a right internal thread 822b that screws into the right external thread 822a. The right external thread 822a is a right-hand thread, while the right internal thread 822b is formed at one of the inclined members 81A. In this embodiment, the right internal thread 822b is a through-hole extending through one of the inclined members 81A in a direction intersecting the longitudinal direction of the antenna 2. Furthermore, in this embodiment, a rotating portion R for rotating the shaft member 821 is attached to the end of the right external thread 822a. However, the location for attaching the rotating portion R is not limited to the end of the right external thread 822a.

[0074] Similar to the right-hand thread mechanism 822, the left-hand thread mechanism 823 comprises a left external thread 823a formed at one end of the shaft member 821, and a left internal thread 823b that screws into the left external thread 823a. The left external thread 823a is a left-hand thread, and the right external thread 822a and the left external thread 823a have approximately the same pitch and crest angle. Furthermore, the left internal thread 823b is formed on the other inclined member 81B, and has approximately the same pitch and crest angle as the right internal thread 822b. In this embodiment, the left internal thread 823b is a through hole that extends through the other inclined member 81B in a direction intersecting the longitudinal direction of the antenna 2.

[0075] <Adjusting the distance between the antenna and the dielectric plate using the distance adjustment mechanism>

[0076] Adjustment of the distance between the antenna 2 and the dielectric plate 7 by the distance adjustment mechanism 8 configured in this manner will be described.

[0077] When the screw mechanism is rotated clockwise by the rotating portion R, the pair of inclined surfaces 81a moves toward the antenna 2 in proportion to the rotation. This reduces the distance between the pair of inclined surfaces 81a, causing the antenna 2 to rise along the pair of inclined surfaces 81a. As a result, the distance between the antenna 2 and the dielectric plate 7 increases, reducing the plasma density in the area where the distance adjustment mechanism 8 is located.

[0078] Conversely, when the screw mechanism is rotated counterclockwise by the rotating portion R, the pair of inclined surfaces 81a moves away from the antenna 2 in proportion to the amount of rotation. This increases the distance between the pair of inclined surfaces 81a, causing the antenna 2 to descend along the pair of inclined surfaces 81a. As a result, the distance between the antenna 2 and the dielectric plate 7 decreases, increasing the plasma density at the location where the distance adjustment mechanism 8 is located.

[0079] <Experimental Example>

[0080] The following describes an experimental example for evaluating the effect of the distance adjustment mechanism 8 on the plasma density in the plasma processing apparatus 100. The present invention is not limited to the following experimental example and can be implemented with modifications within the scope of the present invention. Such modifications are within the technical scope of the present invention.

[0081] (1) Relationship between the distance between a pair of inclined surfaces and the distance between the antenna and the dielectric plate

[0082] The relationship between the distance between the pair of inclined members 81A and 81B and the distance between the antenna 2 and the dielectric plate 7 was evaluated. Specifically, the distance between the antenna 2 and the dielectric plate 7 was changed from 1.0 mm to 3.0 mm by rotating the screw mechanism constituting the moving mechanism 82. The distance between the upper ends of the pair of inclined surfaces 81a (the distance between AB) at this time was determined. The results are shown in FIG. Figure 4 .

[0083] according to Figure 4 The results show that the distance between the antenna 2 and the dielectric plate 7 changes in proportion to the distance between AB. In particular, when the distance between AB changes by 0.5 mm, the distance between the antenna 2 and the dielectric plate 7 changes by 0.1 mm.

[0084] (2) Evaluation of Plasma Density in the Longitudinal Direction of the Antenna

[0085] The plasma density in the vacuum container 1 in the longitudinal direction of the antenna 2 was evaluated. Specifically, after the vacuum container 1 was evacuated, 800 sccm of Ar gas was introduced, and the pressure in the vacuum container 1 was set to 1.0×10 -4 Furthermore, while changing the power value for antenna 2, 3kW of high-frequency power was supplied, and the distance between antenna 2 and dielectric plate 7 was changed from 1.2mm to 2.5mm. The emission intensity of the plasma in vacuum container 1 corresponding to the center and both ends of the long side of antenna 2 was measured using an emission spectrometer. The results are shown in Figure 5 In addition, Figure 5 In the experimental example shown, the luminous intensity of the plasma corresponds to the plasma density. In addition, the antenna 2 and the dielectric plate 7 are moved parallel to each other, and the distance between the antenna 2 and the dielectric plate 7 is the same in the long side direction of the antenna 2. Figure 5 “Middle” represents the luminous intensity corresponding to the center portion of the antenna 2 in the longitudinal direction, and “upper” and “lower” represent the luminous intensity corresponding to the upper and lower ends of the antenna 2 in the longitudinal direction, respectively.

[0086] according to Figure 5 The results show that the luminous intensity is high at the center of antenna 2 and low at the ends. Adjusting the distance between antenna 2 and dielectric plate 7 reduces the variation in luminous intensity. Furthermore, changing the distance between antenna 2 and dielectric plate 7 by 0.1 mm results in a 2% change in luminous intensity.

[0087] Furthermore, in Figure 5Under the same experimental conditions, the distance between the ends of antenna 2 and dielectric plate 7 was fixed at 1.2 mm. The distance between the center of antenna 2 and dielectric plate 7 was varied from 1.2 mm to 2.6 mm. The luminescence intensity of the plasma in vacuum container 1 corresponding to the center and both ends of antenna 2 in the longitudinal direction was measured using a luminescence spectrometer. The results are shown in Figure 6 .also, Figure 6 “Middle” represents the luminous intensity corresponding to the center portion of the antenna 2 in the longitudinal direction, and “upper” and “lower” represent the luminous intensity corresponding to the upper and lower ends of the antenna 2 in the longitudinal direction, respectively.

[0088] according to Figure 6 The results shown show that as the distance between the center of antenna 2 and dielectric plate 7 increases, the luminous intensity corresponding to the center of antenna 2 decreases, while the luminous intensity corresponding to the ends of antenna 2 increases. As a result, it can be seen that the luminous intensity corresponding to the ends and center of antenna 2 is uniform, and when the distance between the center of antenna 2 and dielectric plate 7 is 2.6 mm, the luminous intensity corresponding to the long side direction of antenna 2 is most uniform. Figure 6 The experimental example shown in Figure 5 Under the same experimental conditions, the distance between the two ends of the antenna 2 and the dielectric plate 7 is fixed at 1.2 mm, and the distance between the center of the antenna 2 and the dielectric plate 7 is changed from 1.2 mm to 2.6 mm, thereby making the luminous intensity corresponding to the long side direction of the antenna 2 uniform.

[0089] <Effects of this embodiment>

[0090] With the plasma processing apparatus 100 of this embodiment configured in this manner, as the inclined surface 81a moves, the antenna 2 moves along the inclined surface 81a, thereby changing the distance between the antenna 2 and the dielectric plate 7. Therefore, by adjusting the distance between the antenna 2 and the dielectric plate 7 by moving the inclined surface 81a, the plasma density within the vacuum chamber 1 can be adjusted, thereby achieving uniform plasma density along the longitudinal direction of the antenna 2.

[0091] Furthermore, when the inclined surface 81 a moves toward the antenna 2 , the antenna 2 moves while being sandwiched between the pair of inclined surfaces 81 a . Therefore, the antenna 2 easily moves along the inclined surface 81 a , and the distance between the antenna 2 and the dielectric plate 7 can be adjusted more accurately.

[0092] Furthermore, since the distance between the pair of inclined members 81A and 81B increases or decreases in response to the rotation of the shaft member 821, the distance between the antenna 2 and the dielectric plate 7 can be precisely adjusted by determining the relationship between the rotation of the shaft member 821 and the distance between the pair of inclined surfaces 81a. In particular, since the pair of inclined members 81A and 81B are moved toward or away from the antenna by the right-hand thread mechanism 822 and the left-hand thread mechanism 823, the plasma density can be adjusted by increasing or decreasing the distance between the pair of inclined surfaces 81a.

[0093] Moreover, the inclined surface 81a is planar, and the distance between the antenna 2 and the dielectric plate 7 is proportional to the movement of the inclined surface 81a. Therefore, compared with the case where the inclined surface is non-planar, the distance between the antenna 2 and the dielectric plate 7 can be more easily adjusted.

[0094] <Other Modified Embodiments>

[0095] In addition, the present invention is not limited to the above-described embodiments.

[0096] In this embodiment, the distance adjustment mechanism 8 includes a pair of inclined surfaces 81a. However, the distance adjustment mechanism 8 may also include only a single inclined surface 81a. In this case, by moving one inclined surface 81a and pressing the other inclined surface 81a against the antenna 2, there is a possibility that the antenna 2 may move horizontally without changing its distance from the dielectric plate 7. To prevent this, the distance adjustment mechanism 8 preferably includes a pressing member that prevents the antenna 2 from moving horizontally. Alternatively, a configuration may be employed in which multiple distance adjustment mechanisms 8 are provided along the longitudinal direction of the antenna 2.

[0097] In the present embodiment, the inclined surface 81 a is planar, but the inclined surface 81 a may not be planar, and may be, for example, a curved surface or a plurality of planar surfaces having different gradients combined.

[0098] In this embodiment, the angle formed between inclined surface 81a and outer surface 71 of dielectric plate 7 is 20 degrees, but this angle may be larger than 20 degrees. In this case, due to the steepness of inclined surface 81a, the distance between antenna 2 and dielectric plate 7 can be greatly varied with the movement of inclined surface 81a, thereby rapidly changing the plasma density. Furthermore, the upper limit of the angle formed between inclined surface 81a and outer surface 71 of dielectric plate 7 is, for example, 50 degrees.

[0099] In this embodiment, the moving mechanism 82 is a screw mechanism, but the moving mechanism 82 is not limited to a screw mechanism. For example, the moving mechanism 82 may move the inclined surface 81a in a direction intersecting the longitudinal direction of the antenna 2 using a driving device such as an actuator.

[0100] In this embodiment, the distance adjustment mechanism 8 is disposed on the outer surface 71 of the dielectric plate 7. However, the location of the distance adjustment mechanism 8 is not limited thereto. For example, the movement mechanism 82 may be disposed outside the vacuum chamber 1, and the movement mechanism 82 moves the inclined surface 81a from the outside of the vacuum chamber 1 toward the space between the antenna 2 and the dielectric plate 7.

[0101] In the present embodiment, the screw mechanism constituting the distance adjustment mechanism 8 may be provided on the upper side of the antenna 2 , but may also be provided on the lower side of the antenna 2 .

[0102] In the present embodiment, the plasma processing apparatus 100 has a structure including the slit plate 6 , but may also have a structure not including the slit plate 6 .

[0103] In addition to this embodiment, the distance adjustment mechanism 8 may further include a floating prevention mechanism 84 that prevents the antenna 2 from floating up from the inclined surface 81a. Figure 7 and Figure 8 Specifically, as shown, the anti-floating mechanism 84 comprises a pressing member 841 that contacts and presses the upper side of the antenna 2; a spring member 842 that is connected to the upper side of the pressing member 841 and stores energy in response to the vertical movement of the antenna 2; and a base member 843 that secures the pressing member 841 and spring member 842 to the dielectric plate 7. With this structure, the spring member 842 expands and contracts in response to the vertical movement of the antenna 2, while the pressing member 841 presses the antenna 2 against the inclined surface 81a, thereby preventing the antenna 2 from moving away from the inclined surface 81a. Consequently, the antenna 2 can more accurately follow the movement of the inclined surface 81a and move up and down, allowing for more precise adjustment of the plasma density.

[0104] In addition to this embodiment, the distance adjustment mechanism 8 may further include a contact prevention portion 85 connected to the lower end of the inclined surface 81a to prevent the antenna 2 from contacting the dielectric plate 7. Figure 9 As shown, specifically, contact prevention portion 85 is connected to the lower end of inclined surface 81a, is located a predetermined distance from outer surface 71 of dielectric plate 7, and is flat. This configuration allows antenna 2 to be positioned away from dielectric plate 7, thereby preventing a short circuit from antenna 2 to dielectric plate 7. Furthermore, contact prevention portion 85 need not be flat, as long as it maintains antenna 2 away from dielectric plate 7.

[0105] In addition to this embodiment, the antenna 2 may include: a plurality of metal conductors 21; and one or more bent portions 22, and these metal conductors 21 are connected and bent by the distance adjustment mechanism 8. Figure 10Specifically, as shown, curved portion 22 is accordion-shaped and bends as inclined surface 81a moves. With this structure, the distance between antenna 2 and dielectric plate 7 varies along the longitudinal direction of antenna 2 as inclined surface 81a moves, thereby making the plasma density along the longitudinal direction of antenna 2 more uniform.

[0106] In addition to this embodiment, the plasma processing apparatus 100 may further include: a light emission intensity detection unit 13 for detecting the light emission intensity of the plasma generated in the vacuum container 1; and a control unit 14 for controlling the moving mechanism 82 based on the light emission intensity. Figure 11 and Figure 12 As shown, specifically, the luminous intensity detection unit 13 is provided on the antenna 2 corresponding to the distance adjustment mechanism 8, and outputs the detected luminous intensity to the spectrometer S, which measures the luminous intensity. Furthermore, the control unit 14 is electrically connected to the moving mechanism 82 and the spectrometer S. Based on the luminous intensity measured by the spectrometer S, the control unit 14 controls the rotating device M that rotates the screw mechanism of the moving mechanism 82 so that the luminous intensity detected by each luminous intensity detection unit 13 becomes uniform. With this configuration, the inclined surface 81a moves based on the detected luminous intensity of the plasma, thereby generating plasma within the vacuum vessel 1 and uniformly controlling the plasma density. In the embodiment described above, multiple luminous intensity detection units 13 and distance adjustment mechanisms 8 are provided along the longitudinal direction of the antenna 2, but a single one may also be provided.

[0107] The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit and scope of the invention.

[0108] Industrial applicability

[0109] According to the present invention, when an antenna is arranged outside a vacuum container, it is possible to achieve uniform plasma density in the longitudinal direction of the antenna.

[0110] Explanation of Figure Numbers

[0111] 100: Plasma treatment device

[0112] O: substrate

[0113] P: Inductively coupled plasma

[0114] 2: Antenna

[0115] 3: High frequency power supply

[0116] 6: Slit plate

[0117] 6x: Slit opening

[0118] 7: Dielectric board

[0119] 8: Distance adjustment mechanism

[0120] 81A, 81B: inclined members

[0121] 81a: Inclined surface

[0122] 82: Mobile mechanism

[0123] W: Magnetic field transmission window

[0124] S: Optical Splitter

Claims

1. A plasma processing apparatus, comprising: Vacuum container; an antenna, disposed outside the vacuum container; a dielectric plate for blocking an opening formed in the vacuum container at a position facing the antenna; as well as A distance adjustment mechanism is used to adjust the distance between the antenna and the dielectric plate. The distance adjustment mechanism comprises: an inclined surface disposed between the antenna and the dielectric plate and in contact with a lower side of the antenna; and The moving mechanism adjusts the distance between the antenna and the dielectric plate by moving the inclined surface in a direction intersecting the longitudinal direction of the antenna.

2. The plasma processing apparatus according to claim 1, wherein The distance adjustment mechanism includes a pair of inclined surfaces facing each other and arranged alternately. The moving mechanism adjusts the distance between the antenna and the dielectric plate by increasing or decreasing the distance between the pair of inclined surfaces.

3. The plasma processing apparatus according to claim 2, wherein: The pair of inclined surfaces are respectively formed on a pair of inclined members, The moving mechanism increases or decreases the distance between the pair of inclined members through a screw mechanism.

4. The plasma processing apparatus according to claim 3, wherein: The thread mechanism has: a common shaft member connecting the pair of inclined members; a right-hand thread mechanism disposed between the shaft member and one of the inclined members; and The left-hand thread mechanism is provided so as to be interposed between the shaft member and the other inclined member.

5. The plasma processing apparatus according to any one of claims 1 to 3, wherein: The inclined surface is planar.

6. The plasma processing apparatus according to claim 5, wherein: An angle formed between the inclined surface and the outer surface of the dielectric plate is less than or equal to 20 degrees. 7 . The plasma processing apparatus according to claim 1 , further comprising a floating prevention mechanism configured to prevent the antenna from floating from the inclined surface.

8. The plasma processing apparatus according to any one of claims 1 to 3, wherein: The distance adjustment mechanism further includes a contact prevention portion connected to a lower end of the inclined surface to prevent the antenna from contacting the dielectric plate.

9. The plasma processing apparatus according to any one of claims 1 to 3, wherein: The antenna has: a plurality of metallic conductors; and One or more bending parts connect these metal conductors and bend them through the distance adjustment mechanism.

10. The plasma processing apparatus according to any one of claims 1 to 3, further comprising: a luminous intensity detection unit for detecting the luminous intensity of the plasma generated in the vacuum container; as well as The control unit controls the moving mechanism based on the light emission intensity.

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