Furnace chamber structure adaptive to production of multi-size silicon carbide single crystals and crystal growing furnace

Abstract

The invention provides a furnace chamber structure adaptive to production of multi-size silicon carbide single crystals and a crystal growth furnace, and relates to the technical field of silicon carbide single crystal growth, the furnace chamber structure adaptive to production of the multi-size silicon carbide single crystals comprises a furnace shell and an adjusting plate, the furnace shell is provided with a long-strip hole in the height direction of the furnace shell, and the adjusting plate is arranged in the long-strip hole; the adjusting plate is installed at the long-strip-shaped hole and detachably connected with the furnace shell, and an electrode installation hole opposite to the long-strip-shaped hole is formed in the adjusting plate. The furnace chamber structure adaptive to the production of the multi-size silicon carbide single crystals is convenient for personnel operation, and improves the flexibility and convenience of production while reducing the production cost.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon carbide single crystal growth, and in particular to a furnace cavity structure and a crystal growth furnace suitable for producing multi-sized silicon carbide single crystals. Background Art

[0002] With the development of semiconductor technology, silicon carbide (SiC), as a wide-bandgap semiconductor material, has been widely used in power electronics and other fields due to its excellent physical and electrical properties. Silicon carbide single crystals are usually grown by physical vapor transport (PVT). Specifically, the process is carried out in a sealed graphite crucible. The raw material powder is placed at the bottom of the crucible. Under the high-temperature environment provided by the crystal growth furnace, the raw material sublimates to form a gaseous substance and migrates upward. It re-condenses and crystallizes at the seed crystal with a slightly lower temperature, thereby achieving the growth of silicon carbide single crystals. This method can effectively control the growth rate and quality of the crystal, meeting the requirements of silicon carbide materials in different application scenarios.

[0003] In the prior art, the crystal growth furnace is one of the key equipment for growing silicon carbide single crystals, and its design directly affects the quality of the crystal and production efficiency. However, the existing crystal growth furnace design still has some shortcomings. For example, an electrode mounting port of a fixed height is provided on the side of the furnace shell, and the electrode installed at the mounting port is arranged opposite to the feed port in the furnace body. Since silicon carbide single crystals come in various sizes, including six inches, eight inches, and twelve inches, the requirements for the thermal field size for silicon carbide single crystals of different sizes are different, which may cause the height of the feed port to vary. If a fixed electrode mounting port is used, different furnace shells need to be replaced to adapt to the production needs of silicon carbide single crystals of different sizes, which not only increases costs, but also reduces production flexibility and convenience.

[0004] In addition, existing crystal growth furnaces are equipped with three electrodes at the bottom, connected to a single lower flange that is fixed to the furnace body. When producing silicon carbide single crystals of different sizes, in order to adjust the thermal field size to suit different production requirements, the traditional approach is to replace the entire furnace chamber structure to accommodate the hole spacing between the different electrodes. This approach also causes inconvenience during the production process, limiting the compatibility of the crystal growth furnace with the production of silicon carbide single crystals of different sizes, thereby affecting overall production efficiency and cost-effectiveness.

[0005] Therefore, how to provide a furnace chamber structure and a crystal growth furnace that can improve production flexibility is one of the technical problems that those skilled in the art need to solve. Summary of the Invention

[0006] The present invention aims to provide a furnace chamber structure suitable for producing multi-sized silicon carbide single crystals, which is easy to operate, reduces production costs, and improves production flexibility and convenience. A crystal growth furnace including the above-mentioned furnace chamber structure is also provided.

[0007] To achieve the above objectives, the present invention provides the following technical solutions:

[0008] In the first aspect, the present invention provides a furnace chamber structure suitable for the production of multi-sized silicon carbide single crystals, including a furnace shell and an adjustment plate. The furnace shell is provided with a long hole along its own height direction, and the adjustment plate is installed at the long hole and is detachably connected to the furnace shell. The adjustment plate is provided with an electrode mounting hole arranged opposite to the long hole.

[0009] Furthermore, the adjustment plate and the furnace shell are detachably connected via a connecting piece, a plurality of first connecting holes are provided on the adjustment plate, a wing plate is provided at the edge of the furnace shell corresponding to the long hole, a plurality of second connecting holes are provided on the wing plate corresponding to the plurality of first connecting holes, and the connecting piece passes through the first connecting hole and is inserted into the second connecting hole.

[0010] Furthermore, a first sealing member is provided between the adjustment plate and the wing plate.

[0011] Furthermore, the adjustment plate includes an inner plate body, an outer plate body, an inner flange and an outer flange;

[0012] The inner plate is detachably connected to the furnace shell, and the outer plate is installed on a side of the inner plate facing away from the furnace shell;

[0013] The inner flange is installed between the inner plate and the outer plate, the outer flange is installed on a side of the outer plate away from the inner plate, and the electrode mounting hole is formed between the inner flange and the outer flange.

[0014] Furthermore, a cooling cavity is formed between the inner plate, the outer plate and the inner flange.

[0015] Furthermore, it also includes a flange assembly, which is detachably connected to the bottom of the furnace shell and is equipped with multiple electrodes.

[0016] Furthermore, the flange assembly includes a first flange and a second flange, the first flange is detachably connected to the bottom of the furnace shell, the second flange is detachably connected to the bottom of the first flange, and the second flange is mounted with a plurality of the electrodes.

[0017] Furthermore, a second sealing member is provided between the first flange and the furnace shell, and a third sealing member is provided between the second flange and the first flange.

[0018] Furthermore, a heat preservation plate is included, a limiting groove is formed between the first flange and the second flange, and the bottom of the heat preservation plate is located in the limiting groove, thereby limiting the position of the heat preservation plate relative to the furnace shell.

[0019] In a second aspect, the present invention provides a crystal growth furnace comprising the furnace chamber structure described in the above scheme.

[0020] The furnace chamber structure and crystal growth furnace provided by the present invention, which are suitable for producing multi-sized silicon carbide single crystals, can produce the following beneficial effects:

[0021] In the furnace cavity structure provided by the present invention, when the height of the feed port changes, since the adjustment plate is detachably connected to the furnace shell, personnel can replace different adjustment plates to adjust the height of the electrode mounting hole. Moreover, since the furnace shell is provided with a long hole along its own height direction, even if the height of the electrode mounting hole changes, the electrode can still be fed to the feed port through the long hole.

[0022] Compared with the prior art, the furnace chamber structure provided by the first aspect of the present invention can adapt to the production requirements of silicon carbide single crystals of different sizes by replacing the adjustment plate, which is convenient for personnel operation, reduces production costs, and improves production flexibility and convenience.

[0023] The crystal growth furnace provided in the second aspect of the present invention has the furnace chamber structure provided in the first aspect of the present invention, and thus has all the beneficial effects of the furnace chamber structure provided in the first aspect of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the specific embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0025] Figure 1 A partial cross-sectional view of a crystal growth furnace provided by an embodiment of the present invention;

[0026] Figure 2 for Figure 1 A local enlarged schematic diagram of point A;

[0027] Figure 3 A schematic diagram of a three-dimensional structure of an adjustment plate and a connecting member when connected according to an embodiment of the present invention;

[0028] Figure 4 A schematic diagram of the three-dimensional structure of a crystal growth furnace provided by an embodiment of the present invention at a first viewing angle;

[0029] Figure 5 A schematic diagram of the three-dimensional structure of a crystal growth furnace provided by an embodiment of the present invention at a second viewing angle.

[0030] Icons: 1-furnace shell; 11-long hole; 12-wing plate; 13-bottom plate; 2-adjusting plate; 21-inner plate; 22-outer plate; 23-inner flange; 24-outer flange; 25-cooling chamber; 26-electrode mounting hole; 3-connecting part; 4-first seal; 5-flange assembly; 51-first flange; 52-second flange; 6-electrode; 7-second seal; 8-third seal; 9-insulation plate; 10-upper graphite heater; 011-lower graphite heater; 012-insulation barrel; 013-first insulating ring. DETAILED DESCRIPTION

[0031] The technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0032] In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate and simplify the description of the present invention. They are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation, and therefore should not be construed as limitations on the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0033] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0034] The following describes the specific embodiments of the present invention in detail with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present invention and are not intended to limit the present invention.

[0035] The embodiment of the first aspect of the present invention is to provide a furnace chamber structure suitable for the production of multi-sized silicon carbide single crystals, such as Figure 1 and Figure 2 As shown, it includes a furnace shell 1 and an adjustment plate 2. The furnace shell 1 is provided with a long hole 11 along its own height direction. The adjustment plate 2 is installed at the long hole 11 and is detachably connected to the furnace shell 1. The adjustment plate 2 is provided with an electrode mounting hole 26 arranged opposite to the long hole 11.

[0036] like Figure 1 and Figure 2 As shown, the furnace chamber structure provided by the embodiment of the first aspect of the present invention breaks away from the traditional method of setting fixed electrode mounting holes on the furnace shell, but instead sets elongated holes 11 along the height direction of the furnace shell 1, and a detachable adjustment plate 2 is designed corresponding to the elongated holes 11. When the required thermal field changes, different adjustment plates 2 can be replaced to achieve the purpose of adjusting the height of the electrode mounting hole 26. Since the elongated holes 11 extend along the height direction of the furnace shell 1, the electrode after height adjustment can still be fed to the feeding port through the elongated holes.

[0037] Therefore, the furnace chamber structure provided in the embodiment of the first aspect of the present invention can adapt to the production requirements of silicon carbide single crystals of different sizes by replacing the adjustment plate 2, which is convenient for personnel operation and improves work efficiency, production flexibility and convenience.

[0038] The number of elongated holes 11 is related to the number of electrodes 6 on the side of the furnace shell 1. Specifically, the number of elongated holes 11 is equal to the number of electrodes 6 on the side of the furnace shell 1. When three electrodes 6 are arranged on the side of the furnace shell 1, the furnace shell 1 is equipped with three elongated holes 11, and the three elongated holes 11 are evenly spaced around the axis of the furnace shell 1.

[0039] In addition, the shape of the elongated hole 11 can be a rectangular hole, a waist-shaped hole, etc.

[0040] That is to say, the shape of the elongated hole 11 is not particularly limited, as long as the elongated hole 11 extends to a certain length in the height direction of the furnace shell 1 .

[0041] There are many ways to detachably connect the adjusting plate 2 and the furnace shell 1. For example, the adjusting plate 2 and the furnace shell 1 are connected by snapping, specifically by providing a snap-fit structure on the edge of the adjusting plate 2 and providing a corresponding slot at a corresponding position on the furnace shell 1; or the adjusting plate 2 and the furnace shell 1 are connected by pins, specifically by installing a pin on the adjusting plate 2 and providing a corresponding socket on the furnace shell 1.

[0042] In an optional embodiment, in order to ensure the firmness of the connection between the adjustment plate 2 and the furnace shell 1, as shown in FIG. Figure 4As shown, the adjustment plate 2 and the furnace shell 1 are detachably connected by a connecting member 3, which can be a screw. The adjustment plate 2 is provided with a plurality of first connecting holes, and a wing plate 12 is provided at the edge of the furnace shell 1 corresponding to the long hole 11. The wing plate 12 is provided with a plurality of second connecting holes arranged one-to-one corresponding to the plurality of first connecting holes, and the connecting member 3 passes through the first connecting hole and is inserted into the second connecting hole.

[0043] Taking the connecting member 3 as a screw as an example, when in use, the screw can pass through the first connecting hole and then be tightened in the second connecting hole to achieve the connection between the adjustment plate 2 and the wing plate 12. When the adjustment plate 2 needs to be replaced, just loosen the screw.

[0044] The use of screws as the connecting member 3 not only facilitates the connection between the adjustment plate 2 and the wing plate 12 , but also ensures the firmness of the connection between the two, and the pressure applied by the adjustment plate 2 to the wing plate 12 is also easy to adjust.

[0045] Specifically, the connecting members 3 are configured in plurality, and the connecting members 3 are evenly spaced and distributed along the wing plate 12 .

[0046] In an optional embodiment, if Figure 2 As shown, a first sealing member 4 is provided between the adjustment plate 2 and the wing plate 12 . The provision of the first sealing member 4 can ensure the sealing between the adjustment plate 2 and the wing plate 12 .

[0047] Specifically, the first sealing member 4 is a sealing ring, and a concave sealing groove may be provided on the surface of the wing plate 12 facing the adjustment plate 2 , and the sealing ring is installed in the sealing groove.

[0048] In order to ensure the stability of the sealing ring in the groove, the sealing groove is preferably a dovetail groove.

[0049] In an optional embodiment, if Figure 2 and Figure 3 As shown, the adjustment plate 2 includes an inner plate body 21, an outer plate body 22, an inner flange 23 and an outer flange 24, wherein:

[0050] The inner plate body 21 is detachably connected to the furnace shell 1, and the outer plate body 22 is installed on the side of the inner plate body 21 facing away from the furnace shell 1. The outer plate body 22 and the inner plate body 21 can be connected by welding or the like; the inner flange 23 is installed between the inner plate body 21 and the outer plate body 22, and the outer flange 24 is installed on the side of the outer plate body 22 facing away from the inner plate body 21, and an electrode mounting hole 26 is formed between the inner flange 23 and the outer flange 24.

[0051] Specifically, the inner flange 23 can be welded between the inner plate 21 and the outer plate 22, and the outer flange 24 can be welded to the side of the outer plate 22 facing away from the inner plate 21, so as to ensure the sealing between the flange and the plate.

[0052] In an optional embodiment, if Figure 2As shown, a cooling cavity 25 is formed between the inner plate body 21 , the outer plate body 22 and the inner flange 23 , and a cooling medium can flow through the cooling cavity 25 to cool the adjustment plate 2 .

[0053] When the inner flange 23 is welded between the inner plate 21 and the outer plate 22, and the outer flange 24 is welded to the side of the outer plate 22 facing away from the inner plate 21, compared with the connection method using screws and other connecting parts, it can ensure absolute sealing between the plate and the flange, and no gap will be generated at the connection. The cooling chamber 25 has better sealing performance to avoid water leakage.

[0054] Specifically, the cooling chamber 25 has a water inlet and a water outlet. The water inlet is located at the lower side of the cooling chamber 25, and the water outlet is located at the upper side of the cooling chamber 25, so that the cooling water enters from the bottom and exits from the top.

[0055] In addition, if Figure 1 As shown, an upper graphite heater 10 and a lower graphite heater 011 are provided inside the furnace shell 1, which work together to heat the crystal growth cavity. Therefore, the temperature in the furnace cavity under working conditions usually reaches 2200°C. In order to prevent the temperature of the furnace shell 1 from being too high, a cooling channel is provided inside the furnace shell 1, and the cooling medium can cool the furnace shell 1 through the cooling channel.

[0056] like Figure 2 As shown, a first insulating ring 013 is fixed in the electrode mounting hole 26 , and the first insulating ring 013 is sleeved on the outside of the electrode 6 .

[0057] The material of the first insulating ring 013 may be, but is not limited to, ceramic.

[0058] In addition, the first insulating ring 013 is a circular ring structure to facilitate the installation of the electrode 6.

[0059] In an optional embodiment, if Figure 1 As shown, the furnace chamber structure further includes a flange assembly 5 , which is detachably connected to the bottom of the furnace shell 1 , and a plurality of electrodes 6 are installed on the flange assembly 5 .

[0060] In the above embodiment, since the flange assembly 5 is detachably connected to the bottom of the furnace shell 1, when the hole spacing between the electrodes 6 needs to be adjusted, there is no need to replace the entire furnace chamber structure. It is only necessary to remove the flange assembly 5 and then replace it with a new flange assembly 5 with a different electrode hole spacing. This is convenient for personnel to operate, especially when used in conjunction with the adjustment plate 2. When dealing with the production of silicon carbide single crystals of different sizes, it is only necessary to replace the flange assembly 5 and the adjustment plate 2, thereby improving the overall production efficiency and cost-effectiveness.

[0061] For example, when the silicon carbide single crystal product produced needs to be changed from six inches to eight inches, the required thermal field becomes larger, the position of the feed port is raised, and the distance between the electrodes 6 on the flange assembly 5 increases. At this time, a new adjustment plate 2 can be replaced, the position of the electrode mounting hole 26 can be raised, and at the same time, a new flange assembly 5 with a longer installation distance between the electrodes 6 can be replaced, thereby forming a larger thermal field in the furnace cavity structure. The above process does not require the replacement of the entire furnace cavity structure, which is convenient for personnel operation and improves work efficiency, production flexibility and convenience. The same is true when the silicon carbide single crystal product produced is changed from eight inches to twelve inches. Therefore, the above furnace cavity structure is suitable for the growth of six to twelve-inch silicon carbide single crystals.

[0062] Specifically, the flange assembly 5 can be detachably connected to the furnace shell 1 in a variety of ways, for example, the flange assembly 5 is clamped to the furnace shell 1 by claws, or the flange assembly 5 is connected to the furnace shell 1 by pins, etc.

[0063] In a preferred embodiment, the flange assembly 5 is detachably connected to the furnace shell 1 by screws, which facilitates operation while ensuring the stability of the connection between the flange assembly 5 and the furnace shell 1. The screws are configured in multiples and are evenly spaced around the axis of the furnace shell 1.

[0064] In an optional embodiment, if Figure 1 and Figure 5 As shown, the flange assembly 5 includes a first flange 51 and a second flange 52. The first flange 51 is detachably connected to the bottom of the furnace shell 1. The bottom of the furnace shell 1 is also detachably connected to the bottom plate 13. The second flange 52 is detachably connected to the bottom of the first flange 51. The second flange 52 is installed with multiple electrodes 6. A second insulating ring is provided between each electrode 6 and the second flange 52.

[0065] In the above embodiment, the flange assembly 5 includes a first flange 51 and a second flange 52. Not only can the first flange 51 and the bottom of the furnace shell 1 be disassembled, but the second flange 52 and the bottom of the first flange 51 can also be disassembled. The flange structure of the bottom of the furnace shell 1 can be adjusted by matching the first flange 51 and the second flange 52 of different sizes or models to adapt to the requirements of different thermal fields, and the adjustment is more flexible.

[0066] The detachable connection method between the first flange 51 and the second flange 52 is similar to the detachable connection method between the first flange 51 and the furnace shell 1 . To save space, examples will not be given here one by one.

[0067] To prevent the first flange 51 and the second flange 52 from being overheated, cooling channels are also provided inside the first flange 51 and the second flange 52 . The cooling channels may be spiral, and the cooling medium may cool the first flange 51 and the second flange 52 through the cooling channels.

[0068] In an optional embodiment, in order to ensure the sealing between the flange assembly 5 and the furnace shell 1 and the flange assembly itself, as shown in FIG. Figure 1 As shown, a second sealing member 7 is provided between the first flange 51 and the furnace shell 1 , and a third sealing member 8 is provided between the second flange 52 and the first flange 51 .

[0069] Among them, the second seal 7 and the third seal 8 can be sealing rings, the furnace shell 1 can be provided with a concave sealing groove, the second seal 7 is installed in the concave sealing groove, the outer edge of the second flange 52 is provided with a sink, and the third seal 8 is clamped between the sink and the first flange 51.

[0070] In order to ensure the stability of the second sealing member 7 in the groove, the sealing groove is preferably a dovetail groove.

[0071] In an optional embodiment, if Figure 1 As shown, in order to reduce the loss of temperature in the furnace cavity, the furnace cavity structure also includes an insulation barrel 012 and an insulation plate 9. The insulation barrel 012 is arranged in the furnace shell 1 and is located outside the upper graphite heater 10 and the lower graphite heater 011. A limiting groove is formed between the first flange 51 and the second flange 52. The bottom of the insulation plate 9 is located in the limiting groove, thereby limiting the position of the insulation plate 9 relative to the furnace shell 1.

[0072] In the above embodiment, the second flange 52 can not only support the insulation plate 9, but the cooperation between the second flange 52 and the first flange 51 can also realize the radial limitation of the insulation plate 9. The cooperation between different second flanges 52 and first flanges 51 can also adapt to insulation plates 9 of different sizes.

[0073] An embodiment of the second aspect of the present invention provides a crystal growth furnace. The crystal growth furnace provided by the embodiment of the second aspect of the present invention includes the above-mentioned furnace chamber structure.

[0074] The crystal growth furnace provided in the second aspect of the present invention has the furnace chamber structure provided in the embodiment of the first aspect of the present invention, and thus has all the beneficial effects of the furnace chamber structure provided in the embodiment of the first aspect of the present invention.

[0075] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A furnace chamber structure suitable for the production of multi-sized silicon carbide single crystals, characterized in that: The invention comprises a furnace shell (1) and an adjusting plate (2), wherein the furnace shell (1) is provided with an elongated hole (11) along its height direction, the adjusting plate (2) is mounted at the elongated hole (11) and is detachably connected to the furnace shell (1), and the adjusting plate (2) is provided with an electrode mounting hole (26) arranged opposite to the elongated hole (11).

2. The furnace cavity structure according to claim 1, characterized in that: The adjustment plate (2) and the furnace shell (1) are detachably connected via a connecting piece (3); a plurality of first connecting holes are provided on the adjustment plate (2); a wing plate (12) is provided at the edge of the furnace shell (1) corresponding to the long hole (11); a plurality of second connecting holes are provided on the wing plate (12) corresponding to the plurality of first connecting holes; and the connecting piece (3) passes through the first connecting hole and is inserted into the second connecting hole.

3. The furnace cavity structure according to claim 2, characterized in that: A first sealing member (4) is provided between the adjustment plate (2) and the wing plate (12).

4. The furnace cavity structure according to claim 1, characterized in that: The adjustment plate (2) comprises an inner plate body (21), an outer plate body (22), an inner flange (23) and an outer flange (24); The inner plate (21) is detachably connected to the furnace shell (1), and the outer plate (22) is installed on a side of the inner plate (21) facing away from the furnace shell (1); The inner flange (23) is installed between the inner plate (21) and the outer plate (22), the outer flange (24) is installed on the side of the outer plate (22) away from the inner plate (21), and the electrode mounting hole (26) is formed between the inner flange (23) and the outer flange (24).

5. The furnace cavity structure according to claim 4, characterized in that: A cooling cavity (25) is formed between the inner plate (21), the outer plate (22) and the inner flange (23).

6. The furnace cavity structure according to any one of claims 1 to 5, characterized in that: It also includes a flange assembly (5), which is detachably connected to the bottom of the furnace shell (1), and a plurality of electrodes (6) are installed on the flange assembly (5).

7. The furnace cavity structure according to claim 6, characterized in that: The flange assembly (5) comprises a first flange (51) and a second flange (52), wherein the first flange (51) is detachably connected to the bottom of the furnace shell (1), and the second flange (52) is detachably connected to the bottom of the first flange (51), and the second flange (52) is mounted with a plurality of the electrodes (6).

8. The furnace cavity structure according to claim 7, characterized in that: A second sealing member (7) is provided between the first flange (51) and the furnace shell (1), and a third sealing member (8) is provided between the second flange (52) and the first flange (51).

9. The furnace cavity structure according to claim 7, characterized in that: It also includes a heat preservation plate (9), a limiting groove is formed between the first flange (51) and the second flange (52), and the bottom of the heat preservation plate (9) is located in the limiting groove, thereby limiting the position of the heat preservation plate (9) relative to the furnace shell (1).

10. A crystal growth furnace, characterized in that: The invention comprises a furnace cavity structure as described in any one of claims 1 to 9.

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