Semiconductor device, semiconductor system, and operating method of semiconductor device

Abstract

The invention relates to a semiconductor device, a semiconductor system and an operating method of the semiconductor device. The semiconductor system may include a semiconductor device, a controller configured to control the semiconductor device through an in-band interface, and a substrate management controller configured to control the semiconductor device through a sideband interface, wherein the semiconductor device is configured to control a training operation for an in-band signal received through the in-band interface based on a sideband signal received through the sideband interface.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority from Korean Patent Application No. 10-2024-0018654, filed on February 7, 2024, which is hereby incorporated by reference herein in its entirety. Technical Field

[0003] Embodiments of the present disclosure relate to integrated circuit technology, and more particularly, to a semiconductor device, a semiconductor system, and an operating method of the semiconductor device. Background Art

[0004] In order for a semiconductor device to operate normally after being mounted on a semiconductor system, a training operation of the semiconductor device needs to be completed.

[0005] The training operation may refer to an operation of adjusting the timing of signals so that signals can be normally transmitted and received between the semiconductor device and the controller after booting begins.

[0006] Research is underway to improve user satisfaction by reducing the time required to start up operations of semiconductor systems. Summary of the Invention

[0007] In an embodiment of the present disclosure, a semiconductor system may include: a semiconductor device; a controller configured to control the semiconductor device through an in-band interface; and a baseboard management controller configured to control the semiconductor device through a sideband interface, wherein the semiconductor device is configured to control a training operation for an in-band signal received through the in-band interface based on a sideband signal received through the sideband interface.

[0008] In an embodiment of the present disclosure, a semiconductor device may include: a receiving circuit configured to receive an in-band signal from a controller through an in-band interface; a sending and receiving circuit configured to send a sideband signal to a baseboard management controller and receive a sideband signal from the baseboard management controller through a sideband interface; a command decoding circuit configured to generate a training activation signal based on an output of the sending and receiving circuit; a sampling circuit configured to generate a sampling pattern by sampling the output of the receiving circuit based on the training activation signal; a comparing circuit configured to generate at least one mode comparison signal by comparing the sampling pattern with at least one preset mode based on the training activation signal; and a mode register group configured to store the mode comparison signal based on the training activation signal.

[0009] In an embodiment of the present disclosure, a method for operating a semiconductor device may include: determining whether to perform a training operation based on a sideband signal received through a sideband interface; when it is determined that the training operation is to be performed, generating a sampling pattern based on an in-band signal received through an in-band interface; comparing the sampling pattern with a preset pattern; and storing a comparison result. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 is a diagram illustrating a configuration of a semiconductor system according to an embodiment of the present disclosure.

[0011] Figure 2 is a diagram illustrating a configuration of a semiconductor device according to an embodiment of the present disclosure.

[0012] Figure 3 is a diagram illustrating a configuration of a sampling circuit of a semiconductor device according to an embodiment of the present disclosure.

[0013] Figure 4 is a diagram illustrating a configuration of a comparison circuit of a semiconductor device according to an embodiment of the present disclosure.

[0014] Figure 5 is a flowchart illustrating the operation of a semiconductor device according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0015] Hereinafter, embodiments according to the technical spirit of the present disclosure are described with reference to the accompanying drawings.

[0016] Embodiments of the present disclosure may provide a semiconductor device, a semiconductor system, and an operating method of the semiconductor device, for reducing the time required for a startup operation of the semiconductor system.

[0017] Because the time to start an operation can be reduced, user satisfaction can be improved.

[0018] Figure 1 is a diagram illustrating a configuration of a semiconductor system 100 according to an embodiment of the present disclosure.

[0019] Reference Figure 1 , the semiconductor system 100 may include a controller 110, a semiconductor device 120, and a baseboard management controller (BMC) 130. In one embodiment, the semiconductor device 120 may be a memory device, such as a dynamic random access memory (DRAM). In another embodiment, the semiconductor device 120 may be a memory module including multiple memory devices (e.g., multiple DRAM chips).

[0020] The controller 110 may control the operation of the semiconductor device 120. The controller 110 may be included in a processor, such as a central processing unit (CPU), a graphics processing unit (GPU), or an application processor (AP). The controller 110 may send commands and addresses to the semiconductor device 120 via a command address bus CA_BUS, and may send and receive data to and from the semiconductor device 120 via a data bus DATA_BUS.

[0021] The semiconductor device 120 can perform a set operation under the control of the controller 110. For example, when the semiconductor device 120 is a memory device, the semiconductor device 120 can perform a read operation and a write operation under the control of the controller 110. The semiconductor device 120 can perform an operation indicated by a command and address transmitted via the command and address bus CA_BUS, can transmit data to the controller 110 via the data bus DATA_BUS after the read operation begins, and can receive data transmitted via the data bus DATA_BUS after the write operation begins. In other words, the semiconductor device 120 can distinguish between a read operation and a write operation based on the command and address transmitted via the command and address bus CA_BUS. Then, the semiconductor device 120 can transmit the data stored in the semiconductor device 120 to the controller 110 via the data bus DATA_BUS after the read operation begins, and can store data received via the data bus DATA_BUS after the write operation begins.

[0022] The BMC 130 can perform management and monitoring functions installed on a substrate of a device such as a server or PC. The BMC 130 can communicate with the semiconductor device 120 and can manage the circuits within the semiconductor device 120. In addition, the BMC 130 can communicate with the controller 110, can check the status of the semiconductor system, and can manage the semiconductor system or diagnose its problems. For example, when the semiconductor device 120 is a storage device including multiple memory sticks, the BMC 130 can manage the multiple memory sticks within the semiconductor device 120. An interface called the Intelligent Platform Management Interface (IPMI) can basically be used for communication between the BMC 130 and the controller 110. In addition, communication between the BMC 130 and the semiconductor device 120 can be performed via a management bus Manage_BUS. A memory module management control (M3C) interface similar to an inter-integrated circuit (I2C) interface can be used as the management bus Manage_BUS.

[0023] The command address bus CA_BUS and the data bus DATA_BUS between the controller 110 and the semiconductor device 120 can each be a bus for performing the main functions of the semiconductor device 120. Therefore, such an interface can be referred to as an in-band interface. In this case, the external chip select signal CS_e, the external clock CLK_e, and the data DQ can be sent and received through the in-band interface. Specifically, the external chip select signal CS_e and the external clock CLK_e can be sent and received through the command address bus CA_BUS. The data DQ can be sent and received through the data bus DATA_BUS. In addition, the management bus Manage_BUS between the BMC 130 and the semiconductor device 120 can be used for additional control or management of the semiconductor device 120. Therefore, such an interface can be referred to as a sideband interface. In this case, the management clock SCL and the management control signal SCA can be sent and received through the sideband interface (i.e., the management bus Manage_BUS).

[0024] The semiconductor system 100 configured as described above according to an embodiment of the present disclosure may perform the following startup operations.

[0025] When the semiconductor system 100 is booted up, the controller 110, the semiconductor device 120, and the BMC 130 may each perform a bootup operation according to a set sequence. For example, the controller 110, the semiconductor device 120, and the BMC 130 may each perform a training operation related to the transmission and reception of signals between the controller 110 and the semiconductor device 120. More specifically, for example, the controller 110 may provide the external chip select signal CS_e and the external clock CLK_e to the semiconductor device 120 via an in-band interface. The semiconductor device 120 may perform a training operation based on the pattern of the level of the external chip select signal CS_e and the external clock CLK_e under the control of the BMC 130, and may accumulate and store the training results. In addition, the BMC 130 may receive the training results accumulated in the semiconductor device 120 via a management bus (i.e., Manage_BUS), and if there is a request from the controller 110 or if it is determined that the training results need to be sent to the controller 110, the training results may be sent to the controller 110 via the IPMI interface. Therefore, the time taken to perform the boot-up operation of the semiconductor system 100 may be reduced because the training operation between the controller 110 and the semiconductor device 120 may be performed while the controller 110 performs the boot-up operation according to the set order.

[0026] You can refer to Figures 2 to 4 The configuration and operation of a semiconductor device included in the semiconductor system operated as described above according to an embodiment of the present disclosure are described as follows.

[0027] Figure 2 is a diagram illustrating a configuration of a semiconductor device 120 according to an embodiment of the present disclosure.

[0028] Reference Figure 2 , the semiconductor device 120 may include a receiving circuit 121 , a transmitting and receiving circuit 122 , a command decoding circuit 123 , a sampling circuit 124 , a comparing circuit 125 , and a mode register group 126 .

[0029] The receiving circuit 121 may receive an external chip select signal CS_e and an external clock CLK_e from the controller 110 via an in-band interface, and may output the external chip select signal CS_e and the external clock CLK_e as an internal chip select signal CS_i and an internal clock CLK_i, respectively. For example, the receiving circuit 121 may receive the external chip select signal CS_e and the external clock CLK_e from the controller 110, and may transmit the internal chip select signal CS_i and the internal clock CLK_i to the sampling circuit 124.

[0030] The transmitting and receiving circuit 122 may transmit the management clock SCL and the management control signal SCA to the BMC 130 through the sideband interface and receive the management clock SCL and the management control signal SCA from the BMC 130. For example, the transmitting and receiving circuit 122 may receive the management clock SCL and the management control signal SCA from the BMC 130 through the sideband interface, may transmit the management clock SCL and the management control signal SCA to the command decoding circuit 123, and may transmit the training result S_CR received from the mode register group 126 to the BMC 130 through the sideband interface.

[0031] The command decoding circuit 123 may generate a training activation signal CSTM_en, a reset signal RST, and a result output signal C_out based on the management clock SCL and the management control signal SCA of the BMC 130 transmitted by the transmitting and receiving circuit 122. For example, the command decoding circuit 123 may generate at least one of the training activation signal CSTM_en, the reset signal RST, and the result output signal C_out by decoding the management control signal SCA based on the management clock SCL of the BMC 130 transmitted by the transmitting and receiving circuit 122. That is, the command decoding circuit 123 may enable at least one of the training activation signal CSTM_en, the reset signal RST, and the result output signal C_out by decoding the management control signal SCA.

[0032] The sampling circuit 124 can be activated when the training activation signal CSTM_en is enabled, and can be deactivated when the training activation signal CSTM_en is disabled. The activated sampling circuit 124 can generate a sampling pattern Sp[0:3] by receiving the internal chip select signal CS_i and the internal clock CLK_i from the receiving circuit 121. For example, the sampling circuit 124 can generate the sampling pattern Sp[0:3] by sampling the level of the internal chip select signal CS_i at a specific edge of the internal clock CLK_i, and can output the generated sampling pattern Sp[0:3] to the comparison circuit 125.

[0033] The comparison circuit 125 can be activated when the training activation signal CSTM_en is enabled, and can be deactivated when the training activation signal CSTM_en is disabled. The activated comparison circuit 125 can generate multiple comparison result signals CR[0:2] based on the sampling pattern Sp[0:3] received from the sampling circuit 124. For example, the comparison circuit 125 can generate multiple comparison result signals CR[0:2] by comparing the sampling pattern Sp[0:3] with each of a plurality of preset patterns. More specifically, for example, the comparison circuit 125 can enable one of the first to third comparison result signals CR[0:2] by comparing the sampling pattern Sp[0:3] with each of the first and second preset patterns. When the sampling pattern Sp[0:3] is the same as the first preset pattern, the comparison circuit 125 can enable the first comparison result signal CR[0]. When the sampling pattern Sp[0:3] is the same as the second preset pattern, the comparison circuit 125 can enable the second comparison result signal CR[1]. When the sampling pattern Sp[0:3] is different from both the first preset pattern and the second preset pattern, the comparison circuit 125 enables the third comparison result signal CR[2].

[0034] The mode register set 126 can be activated when the training activation signal CSTM_en is enabled, and can be deactivated when the training activation signal CSTM_en is disabled. The activated mode register set 126 can store the multiple comparison result signals CR[0:2] output by the comparison circuit 125. In addition, the activated mode register set 126 can initialize the information of the multiple comparison result signals CR[0:2] that have been stored by the reset signal RST output by the command decoding circuit 123. In addition, the activated mode register set 126 can output the information of the multiple comparison result signals CR[0:2] as the training result S_CR to the transmission and reception circuit 122, which has been stored according to the result output signal C_out output by the command decoding circuit 123.

[0035] Figure 3is a diagram showing the configuration of a sampling circuit of a semiconductor device according to an embodiment of the present disclosure.

[0036] Reference Figure 3 , the sampling circuit 124 may include a plurality of flip-flops (F / F) 124-1, 124-2, 124-3 and 124-4. In an embodiment, Figure 3 It is shown that the sampling pattern Sp[0:3] includes the first to fourth sampling signals Sp[0], Sp[1], Sp[2] and Sp[3], and the plurality of flip-flops 124-1, 124-2, 124-3 and 124-4 include the first to fourth flip-flops 124-1, 124-2, 124-3 and 124-4. It should be noted that Figure 3 , the number of the first to fourth sampling signals Sp[0], Sp[1], Sp[2], and Sp[3] included in the sampling pattern Sp[0:3] and the number of flip-flops 124-1, 124-2, 124-3, and 124-4 included in the sampling circuit 124d are not limited and are described as examples.

[0037] The sampling circuit 124 may include first to fourth flip-flops 124-1, 124-2, 124-3, and 124-4. The first to fourth flip-flops 124-1, 124-2, 124-3, and 124-4 may each be activated when the training activation signal CSTM_en is enabled, and may be deactivated when the training activation signal CSTM_en is disabled. The first flip-flop 124-1 may be provided with an internal chip select signal CS_i and an internal clock CLK_i. The first flip-flop 124-1 may latch the internal chip select signal CS_i at a specific edge (e.g., a rising edge) of the internal clock CLK_i, and may output the latched internal chip select signal as a first sampling signal Sp[0]. The second flip-flop 124-2 may be provided with the first sampling signal Sp[0] and the internal clock CLK_i. The second flip-flop 124-2 may latch the first sampling signal Sp[0] at a specific edge (e.g., a rising edge) of the internal clock CLK_i, and may output the latched sampling signal as a second sampling signal Sp[1]. The third flip-flop 124-3 may be provided with the second sampling signal Sp[1] and the internal clock CLK_i. The third flip-flop 124-3 may latch the second sampling signal Sp[1] at a specific edge (e.g., a rising edge) of the internal clock CLK_i, and may output the latched sampling signal as the third sampling signal Sp[2]. The fourth flip-flop 124-4 may be provided with the third sampling signal Sp[2] and the internal clock CLK_i. The fourth flip-flop 124-4 may latch the third sampling signal Sp[2] at a specific edge (e.g., a rising edge) of the internal clock CLK_i, and may output the latched sampling signal as the fourth sampling signal Sp[3].

[0038] The sampling circuit 124 configured as described above can generate the first to fourth sampling signals Sp[0], Sp[1], Sp[2], and Sp[3] by latching the internal chip select signal CS_i whenever the internal clock CLK_i transitions four times at a specific edge (e.g., a rising edge) during four cycles of the internal clock CLK_i. In this case, the generated first to fourth sampling signals Sp[0], Sp[1], Sp[2], and Sp[3] can be output as the sampling pattern Sp[0:3].

[0039] Figure 4 is a diagram showing a configuration of a comparison circuit 125 of a semiconductor device 120 according to an embodiment of the present disclosure.

[0040] Reference Figure 4 , the comparison circuit 125 may include a first mode comparison circuit 125-1, a second mode comparison circuit 125-2 and a comparison result output circuit 125-3. Figure 4 In the description, the comparison circuit 125 is described by taking only two preset modes as an example, and the number of preset modes is not limited.

[0041] The first mode comparison circuit 125-1 can generate a first mode comparison signal P1 by comparing the sampling pattern Sp[0:3] with the first preset pattern. For example, when the sampling pattern Sp[0:3] is the same as the first preset pattern, the first mode comparison circuit 125-1 can enable the first mode comparison signal P1. When the sampling pattern Sp[0:3] is different from the first preset pattern, the first mode comparison circuit 125-1 can disable the first mode comparison signal P1.

[0042] The second mode comparison circuit 125-2 can generate a second mode comparison signal P2 by comparing the sampling pattern Sp[0:3] with the second preset pattern. For example, when the sampling pattern Sp[0:3] is the same as the second preset pattern, the second mode comparison circuit 125-2 can enable the second mode comparison signal P2. When the sampling pattern Sp[0:3] is different from the second preset pattern, the second mode comparison circuit 125-2 can disable the second mode comparison signal P2. In this case, the first preset mode and the second preset mode can be different modes. In addition, the first mode comparison circuit 125-1 and the second mode comparison circuit 125-2 can each include a decoding circuit.

[0043] The comparison result output circuit 125-3 can generate first to third comparison result signals CR[0], CR[1], and CR[2] based on the first mode comparison signal P1 and the second mode comparison signal P2. For example, the comparison result output circuit 125-3 can enable one of the first to third comparison result signals CR[0], CR[1], and CR[2] based on the first mode comparison signal P1 and the second mode comparison signal P2. More specifically, for example, when the first mode comparison signal P1 among the first mode comparison signal P1 and the second mode comparison signal P2 is enabled, the comparison result output circuit 125-3 can enable the first comparison result signal CR[0]. When the second mode comparison signal P2 among the first mode comparison signal P1 and the second mode comparison signal P2 is enabled, the comparison result output circuit 125-3 can enable the second comparison result signal CR[1]. When both the first mode comparison signal P1 and the second mode comparison signal P2 are disabled, the comparison result output circuit 125-3 can enable the third comparison result signal CR[2].

[0044] The operation of the semiconductor device constructed as described above according to the embodiment of the present disclosure can be referred to Figure 5 Description is as follows.

[0045] Figure 5 is a flowchart illustrating the operation of a semiconductor device according to an embodiment of the present disclosure.

[0046] Reference Figure 5 , the operating method of the semiconductor device according to the embodiment of the present disclosure may include a standby operation S1 , a training activation check operation S2 , a training execution operation S3 , and a training deactivation check operation S4 .

[0047] Standby operation S1 may be a standby operation for a training operation. In this operation, the semiconductor system has been started, but the training operation has not yet been performed. In standby operation S1, the semiconductor device 120 has not yet received a command to perform a training operation via the sideband interface. Standby operation S1 may include an interval in which the sampling circuit 124, the comparison circuit 125, and the mode register set 126 are deactivated. In this case, during standby operation S1, the receiving circuit 121 and the transmitting and receiving circuit 122 may be activated.

[0048] The training activation check operation S2 may include an operation to determine whether the semiconductor device 120 has received a command instructing the execution of a training operation from the BMC 130 via the sideband interface. For example, the semiconductor device 120 has received a request instructing the execution of a chip select training mode (CSTM) from the BMC 130, and then the chip select training mode is enabled and the training activation check operation S2 is performed. The request may be a command instructing the execution of the chip select training mode (CSTM). The request or command may be a management control signal (SCA).

[0049] When it is determined that the semiconductor device 120 has received a command instructing the execution of a training operation from the BMC 130 (S2, Yes), a training execution operation S3 may be performed. The training execution operation S3 may include a chip select training (CS training) operation. When it is determined that the semiconductor device 120 has not received a command instructing the execution of a training operation from the BMC 130 (S2, No), the standby operation S1 may be maintained. That is, the standby operation S1 and the training activation check operation S2 may be repeatedly performed until the semiconductor device 120 receives a command instructing the execution of a training operation.

[0050] The training execution operation S3 may include the semiconductor device 120 executing a training operation when the semiconductor device 120 receives a command instructing the execution of the training operation from the BMC 130. For example, the training execution operation S3 may include enabling the training activation signal CSTM_en based on the command of the BMC 130 received via the sideband interface, and activating the sampling circuit 124, the comparison circuit 125, and the mode register set 126 based on the enabled training activation signal CSTM_en. In this case, the activated sampling circuit 124 may generate the sampling pattern Sp[0:3] based on the internal chip select signal CS_i and the internal clock signal CLK_i provided by the receiving circuit 121 via the in-band interface. That is, the activated sampling circuit 124 may generate the sampling pattern Sp[0:3] by latching the internal chip select signal CS_i received via the in-band interface at a specific edge of the internal clock CLK_i. The activated comparison circuit 125 may compare the sampling pattern Sp[0:3] with each preset pattern and may output information indicating whether the sampling pattern Sp[0:3] is the same as each preset pattern as a comparison result signal CR[0:2]. The activated mode register set 126 may store the comparison result signal CR[0:2]. That is, the training execution operation S3 may include generating the sampling pattern Sp[0:3] using the internal chip select signal CS_i and the internal clock CLK_i received via the in-band interface, comparing the generated sampling pattern Sp[0:3] with each preset pattern, and storing the comparison result. In addition, the training execution operation S3 may additionally include initializing the data stored in the mode register set 126 based on a command from the BMC 130 received via the sideband interface, and outputting the comparison result stored in the mode register set 126. At this time, the mode register set 126 may be initialized when the command from the BMC 130 received via the sideband interface is decoded by the command decoding circuit 123 and the reset signal RST is enabled. In addition, when a command of the BMC 130 received through the sideband interface is decoded by the command decoding circuit 123 and thus the result output signal C_out is enabled, the comparison result that has been stored in the mode register group 126 can be sent as a training result S_CR to the transmitting and receiving circuit 122. The transmitting and receiving circuit 122 can send the received training result S_CR to the BMC 130 through the sideband interface.

[0051] The training deactivation check operation S4 may include determining whether a command (or request) indicating the termination of the training operation has been received from the BMC 130 via the sideband interface. For example, the semiconductor device 120 has received a request indicating the termination of the chip select training mode (CSTM) from the BMC 130, and then the chip select training mode (CSTM) is disabled and the training deactivation check operation S4 is performed. The request may be a command indicating the termination of the chip select training mode (CSTM). The request or command may be a management control signal (SCA). In this case, the training deactivation check operation S4 may include deactivating the training activation signal CSTM_en when the command decoding circuit 123 recognizes that the command from the BMC 130 received via the sideband interface is a command indicating the termination of the training operation. At this time, when the training activation signal CSTM_en is deactivated, the sampling circuit 124, the comparison circuit 125, and the mode register group 126 may be deactivated. When the command indicating the termination of the training operation is determined (S4, yes), the training operation of the semiconductor device according to the embodiment of the present disclosure may be terminated. When a command instructing to terminate the training operation is not determined ( S4 , No), the training execution operation S3 may be maintained.

[0052] As described above, the training method of the semiconductor device according to the embodiment of the present disclosure can be a method of controlling the training operation for the signal received through the in-band interface based on the signal received through the sideband interface. In addition, the semiconductor system according to the embodiment of the present disclosure can reduce the time taken for the startup operation of the semiconductor system 110 in a manner in which the BMC 130 controls the training operation of the semiconductor device 120 through the sideband interface during the startup operation of the controller 110.

[0053] Although embodiments according to the technical spirit of the present disclosure have been described above with reference to the accompanying drawings, these embodiments are provided only to describe embodiments conceived according to the present disclosure, and the present disclosure is not limited to these embodiments. Without departing from the technical spirit of the present disclosure as described in the claims, a person of ordinary skill in the art to which the present disclosure belongs may replace, modify, and change the embodiments in various ways. These replacements, modifications, and changes can be said to fall within the scope of the present disclosure. In addition, these embodiments can be combined to form additional embodiments.

Claims

1. A semiconductor system comprising: semiconductor devices; a controller for controlling the semiconductor device via an in-band interface; as well as a baseboard management controller that controls the semiconductor device via a sideband interface, The semiconductor device controls a training operation on an in-band signal based on a sideband signal received through the sideband interface, and the in-band signal is received through the in-band interface.

2. The semiconductor system according to claim 1, wherein The in-band signals include an external chip select signal and an external clock.

3. The semiconductor system according to claim 2, wherein: The semiconductor device controls whether to perform the training operation based on the sideband signal.

4. The semiconductor system according to claim 3, wherein: The semiconductor device: By receiving the external chip selection signal and the external clock, an internal chip selection signal and an internal clock are generated, When performing the training operation based on the sideband signal, generating a sampling pattern by latching the internal chip select signal at a specific edge of the internal clock, and One or more comparison results are stored by comparing the sampling pattern with at least one preset pattern.

5. The semiconductor system according to claim 4, wherein The semiconductor device sends the stored comparison result based on the sideband signal to the baseboard management controller through the sideband interface.

6. A semiconductor device comprising: a receiving circuit for receiving an in-band signal from the controller through the in-band interface; a transmitting and receiving circuit for transmitting and receiving sideband signals to and from a baseboard management controller via a sideband interface; a command decoding circuit that generates a training activation signal based on the output of the transmitting and receiving circuits; a sampling circuit, which: generates a sampling pattern by sampling the output of the receiving circuit based on the training activation signal; a comparison circuit, which: generates at least one pattern comparison signal by comparing the sampled pattern with at least one preset pattern based on the training activation signal; and A mode register set stores the mode comparison signal based on the training activation signal.

7. The semiconductor device according to claim 6, wherein: The in-band signals include an external chip select signal and an external clock, and The receiving circuit generates an internal chip selection signal and an internal clock by receiving the external chip selection signal and the external clock.

8. The semiconductor device according to claim 7, wherein When the training activation signal is enabled, the sampling circuit generates the sampling pattern by latching the internal chip selection signal at a specific edge of the internal clock.

9. The semiconductor device according to claim 6, wherein The comparison circuit: When the training activation signal is enabled, the sampling pattern is compared with the preset pattern to determine whether the sampling pattern and the preset pattern are identical to each other, and One or more comparison results are generated as the pattern comparison signal.

10. The semiconductor device according to claim 6, wherein The command decoding circuit also generates a reset signal and a result output signal based on the output of the transmitting and receiving circuit.

11. The semiconductor device according to claim 10, wherein the mode register set: When the reset signal is enabled, the stored information of the mode comparison signal is initialized, and When the result output signal is enabled, the stored information of the mode comparison signal is transmitted to the baseboard management controller via the sideband interface by transmitting the stored information of the mode comparison signal to the transmitting and receiving circuit.

12. A method for operating a semiconductor device, the method comprising: determining whether to perform a training operation based on a sideband signal received via the sideband interface; When it is determined to perform the training operation, generating a sampling pattern based on an in-band signal received through the in-band interface; comparing the sampling pattern with a preset pattern; as well as Store the comparison results.

13. The operating method according to claim 12, wherein: The in-band signals include chip select signals and clocks, and Generating the sampling pattern includes generating the sampling pattern by latching the chip select signal at a specific edge of the clock.

14. The operating method according to claim 12, wherein: Comparing the sampling pattern with the preset pattern includes comparing the sampling pattern with the preset pattern to determine whether the sampling pattern and the preset pattern are identical to each other.

15. The operating method according to claim 12, further comprising: The stored comparison result is initialized based on the sideband signal.

16. The operating method according to claim 12, further comprising: Based on the sideband signal, the stored comparison result is output via the sideband interface.

17. The operating method according to claim 12, wherein: The sideband interface is coupled between the semiconductor device and a baseboard management controller.

18. The operating method according to claim 17, wherein: The in-band interface is coupled between the semiconductor device and a controller.

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