Dry-type transformer for semiconductor equipment

Abstract

The present application relates to the technical field of transformer, in particular to a dry-type transformer for semiconductor equipment, comprising: a core winding unit formed by epoxy resin vacuum casting; a multilayer nano ceramic insulation layer wrapped on the surface of the core winding unit conductor; an internal liquid cooling channel module integrated between the layers of the core winding unit; an electromagnetic shielding shell wrapped on the whole transformer body; and an intelligent monitoring system installed on the electromagnetic shielding shell for monitoring the dry-type transformer; the dry-type transformer has high safety and good stability.

Description

Technical Field

[0001] This invention relates to the technical field of transformers, and in particular to dry-type transformers for semiconductor equipment. Background Technology

[0002] In modern electronics manufacturing, especially for semiconductor production equipment requiring high precision and performance, a stable and efficient power supply is a key factor in ensuring smooth production. Dry-type transformers, due to their advantages such as oil-free operation, ease of maintenance, and environmental friendliness, are widely used in power supply systems for semiconductor manufacturing equipment. However, as semiconductor process nodes continue to shrink and technological complexity increases, the requirements for power quality are becoming increasingly stringent, posing greater challenges to the design of dry-type transformers.

[0003] Although traditional dry-type transformers have made significant progress in insulation performance, they may still be at risk of partial discharge or insulation breakdown when facing high-temperature and high-pressure working environments. This not only affects the service life of the transformer itself, but may also threaten the safety and stability of the entire production line. Summary of the Invention

[0004] To address the aforementioned technical problems, this invention provides a dry-type transformer for semiconductor equipment that offers high safety and stability.

[0005] The dry-type transformer for semiconductor equipment of the present invention includes:

[0006] The iron core winding unit is formed by vacuum casting of epoxy resin.

[0007] A multi-layered nano-ceramic insulation layer is coated on the surface of the conductor of the iron core winding unit.

[0008] Built-in liquid cooling channel module, integrated between the layers of the iron core winding unit;

[0009] An electromagnetic shielding shell covers the entire transformer body;

[0010] The intelligent monitoring system, installed on the electromagnetic shielding enclosure, is used to monitor dry-type transformers.

[0011] As a preferred embodiment of the present invention, the core winding unit includes:

[0012] The main magnetic circuit is constructed by interleaving amorphous alloy iron cores and silicon steel iron cores:

[0013] The low-voltage winding and the high-voltage winding are nested coaxially on the main magnetic circuit, and the radial distance between the low-voltage winding and the high-voltage winding is maintained by epoxy resin insulating support strips.

[0014] As a preferred embodiment of the present invention, the core winding unit adopts a composite structure of amorphous alloy iron core and silicon steel core, wherein the amorphous alloy iron core occupies 30-50% of the main magnetic circuit cross-sectional area.

[0015] As a preferred embodiment of the present invention, a nanocrystalline transition layer is provided between the amorphous alloy core and the silicon steel core. The transition layer is composed of an Fe-Si-B-Cu alloy with a grain size ≤50nm.

[0016] As a preferred embodiment of the present invention, the multilayer nano-ceramic insulating layer is composed of alternating stacked aluminum nitride layers and silicon oxide layers, wherein the thickness of a single layer composed of aluminum nitride layers and silicon oxide layers is 50-100nm, and the total dielectric strength is ≥35kV / mm.

[0017] As a preferred embodiment of the present invention, the built-in liquid cooling channel module includes:

[0018] The spiral stainless steel microchannel tube is bonded to the iron core winding unit layer by thermally conductive adhesive, and the inlet manifold and outlet manifold of the spiral stainless steel microchannel tube penetrate the electromagnetic shielding shell.

[0019] Phase change cooling medium with a melting point of 40-45℃;

[0020] Distributed flow control valve, linked with intelligent monitoring system.

[0021] As a preferred embodiment of the present invention, a thermally conductive silicone grease interface layer with a thermal conductivity ≥5W / (m•K) is provided between the multilayer nano-ceramic insulating layer and the built-in liquid cooling channel module.

[0022] As a preferred embodiment of the present invention, the electromagnetic shielding shell has a three-layer structure, which, from the inside out, consists of:

[0023] Permalloy shielding layer, thickness 0.5-1mm;

[0024] Conductive rubber buffer layer with a volume resistivity ≤10Ω•cm;

[0025] Surface anodized aluminum protective layer.

[0026] As a preferred embodiment of the present invention, the intelligent monitoring system includes:

[0027] A fiber Bragg grating temperature sensor array is arranged in the hot spot area of ​​the iron core winding unit;

[0028] A triaxial MEMS vibration sensor is mounted on the surface of the yoke in the main magnetic circuit.

[0029] The ultra-high frequency partial discharge detection module is installed on the outside of the high-voltage winding output terminal, with a detection bandwidth of 300MHz-1.5GHz.

[0030] As a preferred embodiment of the present invention, the detection data of the fiber Bragg grating temperature sensor array forms a closed-loop control with the distributed flow control valve. When the temperature at any monitoring point exceeds 65°C, the flow rate of the corresponding cooling circuit is automatically increased.

[0031] Compared with existing technologies, the advantages of this invention are as follows: The core winding unit is made of epoxy resin vacuum casting, which has excellent mechanical strength and electrical insulation performance, ensuring stable and efficient energy conversion. Multi-layer nano-ceramic insulation layers are tightly wrapped around the conductor surface of the core winding unit as the main insulation protection structure. With the high insulation characteristics and high temperature resistance of nanomaterials, the insulation strength is greatly improved, effectively preventing partial discharge and insulation breakdown, and ensuring the safe operation of the transformer. The built-in liquid cooling channel module is integrated between the layers of the core winding unit, which can quickly remove the heat generated during operation. Compared with traditional heat dissipation methods, it significantly improves heat dissipation efficiency, reduces winding temperature, and extends the service life of the transformer. The electromagnetic shielding shell covers the entire transformer body, effectively isolating external electromagnetic interference and suppressing the leakage of electromagnetic radiation from the transformer itself, avoiding the impact on the precision electronic components of semiconductor equipment, and ensuring the electromagnetic compatibility of equipment operation. The intelligent monitoring system is installed in the electromagnetic shielding shell, which can monitor the temperature, voltage, current and other key parameters of the dry-type transformer in real time, detect abnormalities in time and issue early warnings, which facilitates the quick handling of faults by operation and maintenance personnel, realizes intelligent management, and improves the reliability and maintenance efficiency of transformer operation. The components complement each other and provide reliable power guarantee for the stable operation of semiconductor equipment. Attached Figure Description

[0032] Figure 1 This is a schematic diagram of the main structure of the present invention;

[0033] Figure 2 This is a schematic diagram of the internal structure of the present invention;

[0034] Figure 3 yes Figure 2 Enlarged structural diagram of section B;

[0035] Figure 4 yes Figure 2 Enlarged structural diagram of section A in the middle;

[0036] Figure 5 This is a schematic diagram of the process structure of the present invention;

[0037] The attached diagram is labeled as follows: 1. Iron core winding unit; 11. Amorphous alloy iron core; 12. Silicon steel core; 13. Low-voltage winding; 14. High-voltage winding; 2. Multilayer nano-ceramic insulation layer; 21. Aluminum nitride layer; 22. Silicon oxide layer; 3. Built-in liquid cooling channel module; 31. Spiral stainless steel microchannel tube; 32. Phase change cooling medium; 33. Distributed flow control valve; 4. Electromagnetic shielding shell; 41. Permalloy shielding layer; 42. Conductive rubber buffer layer; 43. Surface anodized aluminum protective layer; 5. Intelligent monitoring system; 51. Fiber Bragg grating temperature sensor array; 52. Triaxial MEMS vibration sensor; 53. Ultra-high frequency partial discharge detection module. Detailed Implementation

[0038] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0039] Reference Figures 1-2 This embodiment provides a dry-type transformer for semiconductor equipment, comprising:

[0040] Iron core winding unit 1 is the core energy conversion component of the transformer, and is made of epoxy resin by vacuum casting.

[0041] A multilayer nano-ceramic insulation layer 2 is wrapped around the conductor surface of the iron core winding unit 1 as the main insulation protection structure.

[0042] The built-in liquid cooling channel module 3 is integrated into the iron core winding unit 1 layer to achieve efficient heat dissipation management;

[0043] Electromagnetic shielding shell 4 covers the entire transformer body and is used to isolate external electromagnetic interference and suppress the transformer's electromagnetic radiation to the outside.

[0044] The intelligent monitoring system 5 is installed on the electromagnetic shielding shell 4 and is used to monitor the dry-type transformer.

[0045] In this embodiment, the core winding unit 1 is vacuum-cast with epoxy resin, possessing excellent mechanical strength and electrical insulation properties, ensuring stable and efficient energy conversion. A multi-layered nano-ceramic insulation layer 2 tightly covers the conductor surface of the core winding unit 1, serving as the main insulation protection structure. Leveraging the high insulation properties and high-temperature resistance of nanomaterials, it significantly enhances insulation strength, effectively preventing partial discharge and insulation breakdown, ensuring safe transformer operation. An integrated liquid cooling channel module 3 is integrated between the layers of the core winding unit 1, rapidly dissipating heat generated during operation. Compared to traditional heat dissipation methods, this significantly improves heat dissipation efficiency, reduces winding temperature, and extends transformer lifespan. An electromagnetic shielding shell 4 covers the entire transformer body, effectively isolating external electromagnetic interference and suppressing electromagnetic radiation leakage from the transformer itself, preventing impact on precision electronic components of semiconductor equipment and ensuring electromagnetic compatibility of equipment operation. An intelligent monitoring system 5 is installed on the electromagnetic shielding shell 4, enabling real-time monitoring of key parameters such as temperature, voltage, and current of the dry-type transformer. It promptly detects anomalies and provides early warnings, facilitating rapid fault handling by maintenance personnel, achieving intelligent management, and improving transformer operational reliability and maintenance efficiency. All components complement each other, providing reliable power assurance for the stable operation of semiconductor equipment.

[0046] As a preferred embodiment of the above technical solution, such as Figures 1 to 5 As shown, the core winding unit 1 includes:

[0047] The amorphous alloy core 11 and the silicon steel core 12 are arranged in an alternating stacking manner to form the main magnetic circuit.

[0048] The low-voltage winding 13 and the high-voltage winding 14 are nested coaxially on the main magnetic circuit, and the low-voltage winding 13 and the high-voltage winding 14 are kept radially apart by epoxy resin insulating support strips.

[0049] The core winding unit 1 adopts a composite structure of amorphous alloy core 11 and silicon steel core 12, wherein the amorphous alloy core 11 accounts for 30-50% of the main magnetic circuit cross-sectional area;

[0050] In this embodiment, amorphous alloy core 11 and silicon steel core 12 are staggered and stacked, combining the advantages of both. The low loss characteristics of amorphous alloy core 11 reduce no-load loss, while the high saturation magnetic induction intensity of silicon steel core 12 ensures magnetic circuit stability. The 30-50% proportion of amorphous alloy core 11 optimizes magnetic circuit performance, reducing energy loss while increasing permeability. The low-voltage winding 13 and high-voltage winding 14 are coaxially nested in the main magnetic circuit, resulting in a compact layout that saves space. Epoxy resin insulating supports maintain radial spacing, ensuring electrical insulation safety, preventing short circuits between windings, and improving insulation reliability. This structural design enables the core winding unit 1 to possess the characteristics of high efficiency and energy saving, stable operation, and reliable insulation, reducing transformer operating costs, enhancing overload capacity and stability, and providing efficient and stable power conversion for semiconductor equipment, meeting the high-precision and high-stability power requirements of semiconductor manufacturing.

[0051] As a preferred embodiment of the above technical solution, such as Figures 2 to 5 As shown, the multilayer nano-ceramic insulating layer 2 is composed of alternating stacked aluminum nitride layers 21 and silicon oxide layers 22. The aluminum nitride layers 21 and silicon oxide layers 22 form a single layer with a thickness of 50-100 nm and a total dielectric strength ≥35 kV / mm.

[0052] In this embodiment, the aluminum nitride layer 21 possesses excellent thermal conductivity and mechanical strength, effectively conducting the heat generated during the operation of the iron core winding unit 1, preventing local overheating, and simultaneously improving the overall toughness of the insulation layer. The silicon oxide layer 22, with its high chemical stability and insulating properties, effectively isolates external moisture and corrosive substances from intrusion, preventing conductor oxidation and insulation aging. The single-layer thickness of 50-100nm ensures the nanoscale uniformity and density of the material, reducing air gaps and defects, and improving dielectric performance. The total dielectric strength ≥35kV / mm ensures that the insulation layer is not broken down under high voltage conditions, can withstand the electrical stress under complex operating conditions of semiconductor equipment, and effectively prevents partial discharge and surface flashover. The alternating stacked structure forms a composite insulation barrier, achieving complementary advantages, enhancing the insulation layer's resistance to electrical tree growth and electrical aging, extending the transformer's insulation life, providing reliable protection for the electrical safety of semiconductor equipment, and ensuring the stable operation of the dry-type transformer under high precision and high reliability requirements.

[0053] Specifically, such as Figures 2 to 5 As shown, the built-in liquid cooling channel module 3 includes:

[0054] The spiral stainless steel microchannel tube 31 is bonded to the iron core winding unit 1 layer by thermally conductive adhesive, and the inlet manifold and outlet manifold of the spiral stainless steel microchannel tube 31 penetrate the electromagnetic shielding shell 4.

[0055] Phase change cooling medium 32 has a melting point of 40-45℃;

[0056] Distributed flow control valve 33 is linked with intelligent monitoring system 5;

[0057] In this embodiment, the spiral stainless steel microchannel tube 31 is bonded to the core winding unit 1 layers with thermally conductive adhesive. Its spiral structure increases the heat dissipation area. The stainless steel material is resistant to high temperature and corrosion, ensuring long-term stable operation. The inlet manifold and outlet manifold pass through the electromagnetic shielding shell 4, facilitating the circulation of the cooling medium. The phase change cooling medium 32 with a melting point of 40-45℃ absorbs the latent heat of phase change when the winding temperature rises, efficiently removing heat. Compared with traditional liquid cooling, it can absorb more heat, improve heat dissipation efficiency, and reduce winding temperature fluctuations. The distributed flow control valve 33 is linked with the intelligent monitoring system 5, dynamically adjusting the cooling medium flow rate in real time according to the monitored temperature, load, and other parameters. In high-heat areas, the flow rate is increased to enhance heat dissipation, and the flow rate is reduced to reduce energy consumption under low load, realizing intelligent adaptive control of the heat dissipation system and avoiding resource waste. This module quickly removes the heat generated by the core winding unit 1, maintaining its operation within a safe temperature range, effectively delaying insulation aging, improving the transformer's overload capacity and reliability, and meeting the stringent requirements of semiconductor equipment for high stability and high heat dissipation efficiency of power supply equipment.

[0058] As a preferred embodiment of the above technical solution, such as Figure 5 As shown, a thermally conductive silicone grease interface layer with a thermal conductivity ≥5W / (m•K) is provided between the multilayer nano-ceramic insulating layer 2 and the built-in liquid cooling channel module 3.

[0059] In this embodiment, the interface layer effectively fills the tiny air gap between the insulation layer and the liquid cooling channel module, eliminating thermal resistance and rapidly and efficiently transferring the heat from the core winding unit 1 conducted by the multilayer nano-ceramic insulation layer 2 to the built-in liquid cooling channel module 3. Combined with the spiral stainless steel microchannel tube 31 and the phase change cooling medium 32, this significantly improves overall heat dissipation efficiency and reduces the winding operating temperature. Simultaneously, the thermally conductive silicone grease itself possesses excellent insulation properties, enhancing heat conduction without damaging the insulation protection system of the multilayer nano-ceramic insulation layer 2, ensuring the transformer's insulation strength and preventing aging of the insulation material or partial discharge due to heat accumulation. Furthermore, the high thermal conductivity of the silicone grease interface layer also improves the response speed of the heat dissipation system, allowing the distributed flow control valve 33 to more accurately adjust the cooling medium flow rate based on feedback from the intelligent monitoring system 5, achieving efficient utilization of heat dissipation resources, further extending the transformer's service life, providing more stable and reliable power support for semiconductor equipment, and ensuring safe operation of the equipment under high-precision, high-load conditions.

[0060] Specifically, as shown in Figure 5, the electromagnetic shielding shell 4 has a three-layer structure, which consists of the following layers from the inside out:

[0061] Permalloy shielding layer 41, thickness 0.5-1mm;

[0062] Conductive rubber buffer layer 42, volume resistivity ≤10Ω•cm;

[0063] Surface anodized aluminum protective layer 43;

[0064] In this embodiment, the permalloy shielding layer 41 has a thickness of 0.5-1mm. Due to its high magnetic permeability, it can effectively absorb and guide external magnetic fields, while suppressing the leakage of electromagnetic radiation generated by the transformer itself. This reduces the impact of electromagnetic interference on the precision components of semiconductor equipment and ensures the electromagnetic compatibility of the equipment. The conductive rubber buffer layer 42 has a volume resistivity of ≤10Ω・cm, combining conductivity and buffer elasticity. It can absorb external mechanical shocks and prevent the permalloy shielding layer 41 from being damaged by vibration or collision. At the same time, it conducts electromagnetic energy that is not completely isolated by the shielding layer, further enhancing the shielding effect. The surface anodized aluminum protective layer 43 has high hardness and corrosion resistance, and can resist external moisture, corrosive gases and mechanical wear. This protects the two internal structures and ensures long-term stable operation, extending the service life of the electromagnetic shielding shell 4. This ensures the transformer can operate continuously and stably in complex industrial environments, effectively reducing the impact of electromagnetic interference on semiconductor equipment and improving the reliability and stability of the overall system operation.

[0065] As a preferred embodiment of the above technical solution, the intelligent monitoring system 5 includes:

[0066] A fiber Bragg grating temperature sensor array 51 is arranged in the hot spot area of ​​the iron core winding unit 1;

[0067] A triaxial MEMS vibration sensor 52 is mounted on the surface of the yoke in the main magnetic circuit;

[0068] The ultra-high frequency partial discharge detection module 53 is sleeved on the outside of the output terminal of the high voltage winding 14, with a detection bandwidth of 300MHz-1.5GHz;

[0069] In this embodiment, the fiber Bragg grating temperature sensor array 51 is arranged in the hot spot area of ​​the iron core winding unit 1. Utilizing the advantages of fiber optic sensing technology, such as anti-electromagnetic interference and high accuracy, it monitors the winding temperature distribution in real time, providing early warning of overheating faults and preventing insulation aging or burnout due to localized high temperatures. The triaxial MEMS vibration sensor 52 is installed on the surface of the yoke of the main magnetic circuit, capturing the vibration signal of the amorphous alloy iron core 11 and silicon steel iron core 12 interleaved lamination structure. By analyzing the changes in vibration frequency and amplitude, it determines mechanical faults such as iron core loosening and winding deformation, ensuring the stability of the magnetic circuit. The ultra-high frequency partial discharge detection module 53 is also included. Located on the outer side of the high-voltage winding 14 output terminal, the detection bandwidth covers 300MHz-1.5GHz, enabling it to sensitively capture partial discharge signals such as air gap discharge and surface flashover in the insulation layer. Combined with the dielectric properties of the multilayer nano-ceramic insulation layer 2, it can detect insulation defects in advance and prevent insulation breakdown accidents. The three types of monitoring units work together to build a multi-dimensional monitoring system covering temperature, mechanical vibration, and electrical discharge, providing real-time data support for intelligent operation and maintenance. This facilitates maintenance personnel to quickly locate potential faults, formulate targeted maintenance strategies, improve the reliability of transformer operation and the continuity of semiconductor equipment production lines, and reduce the risk of unplanned downtime.

[0070] Specifically, such as Figure 5 As shown, the detection data of the fiber Bragg grating temperature sensor array 51 and the distributed flow control valve 33 form a closed-loop control. When the temperature at any monitoring point exceeds 65°C, the flow rate of the corresponding cooling circuit is automatically increased.

[0071] In this embodiment, when the temperature of any hot spot area in the core winding unit 1 exceeds 65°C, the sensor array 51 transmits the temperature data to the intelligent monitoring system 5 in real time. The system immediately triggers the distributed flow control valve 33 to increase the flow rate of the phase change cooling medium 32 in the corresponding cooling circuit. The spiral stainless steel microchannel tube 31 enhances the heat dissipation in this area, quickly reducing the winding temperature and preventing local overheating that could lead to insulation aging or faults. This closed-loop control mechanism has a fast response speed and high control accuracy. It can dynamically allocate heat dissipation resources according to the actual temperature distribution, enhance heat dissipation capacity under high load conditions, and automatically reduce flow to reduce energy consumption under low load conditions. Compared with the traditional fixed flow heat dissipation method, it significantly improves heat dissipation efficiency and energy utilization, while reducing the long-term operating load of the built-in liquid cooling channel module 3, extending the service life of the cooling system, and ensuring that the transformer always maintains safe and stable operation under complex semiconductor equipment conditions, providing a strong guarantee for the continuous and reliable power supply of the production line.

[0072] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit it. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, and all such modifications or substitutions should be covered within the scope of the claims of the present invention.

Claims

1. A dry-type transformer for semiconductor equipment, characterized in that, include: The iron core winding unit (1) is formed by vacuum casting of epoxy resin; A multilayer nano-ceramic insulating layer (2) is wrapped around the conductor surface of the iron core winding unit (1); Built-in liquid cooling channel module (3) is integrated between the layers of the iron core winding unit (1); An electromagnetic shielding shell (4) covers the entire transformer body; The intelligent monitoring system (5) is installed on the electromagnetic shielding shell (4) and is used to monitor the dry-type transformer; The core winding unit (1) includes: The amorphous alloy core (11) and the silicon steel core (12) are arranged in an alternating stacking manner to form the main magnetic circuit: The low-voltage winding (13) and the high-voltage winding (14) are nested coaxially on the main magnetic circuit, and the low-voltage winding (13) and the high-voltage winding (14) are kept radially apart by epoxy resin insulating support strips; The built-in liquid cooling channel module (3) includes: The spiral stainless steel microchannel tube (31) is bonded to the layers of the iron core winding unit (1) by thermally conductive adhesive, and the inlet manifold and outlet manifold of the spiral stainless steel microchannel tube (31) penetrate the electromagnetic shielding shell (4). Phase change cooling medium (32), melting point 40-45℃; The distributed flow control valve (33) is linked with the intelligent monitoring system (5).

2. The dry-type transformer for semiconductor equipment as described in claim 1, characterized in that, The core winding unit (1) adopts a composite structure of the amorphous alloy core (11) and the silicon steel core (12), wherein the amorphous alloy core (11) occupies 30-50% of the main magnetic circuit cross-sectional area.

3. The dry-type transformer for semiconductor equipment as described in claim 1, characterized in that, A nanocrystalline transition layer is provided between the amorphous alloy core (11) and the silicon steel core (12). The transition layer is composed of Fe-Si-B-Cu alloy with a grain size ≤50nm.

4. The dry-type transformer for semiconductor equipment as described in claim 1, characterized in that, The multilayer nano-ceramic insulating layer (2) is composed of alternating stacked aluminum nitride layers (21) and silicon oxide layers (22), wherein the aluminum nitride layers (21) and silicon oxide layers (22) form a single layer with a thickness of 50-100nm and a total dielectric strength ≥35kV / mm.

5. The dry-type transformer for semiconductor equipment as described in claim 1, characterized in that, A thermally conductive silicone grease interface layer with a thermal conductivity ≥5W / (m·K) is provided between the multilayer nano-ceramic insulating layer (2) and the built-in liquid cooling channel module (3).

6. The dry-type transformer for semiconductor equipment as described in claim 1, characterized in that, The electromagnetic shielding shell (4) has a three-layer structure, which consists of the following layers from the inside out: Permalloy shielding layer (41), thickness 0.5-1mm; Conductive rubber buffer layer (42), volume resistivity ≤10Ω•cm; Surface anodic aluminum oxide protective layer (43).

7. The dry-type transformer for semiconductor equipment as described in claim 1, characterized in that, The intelligent monitoring system (5) includes: A fiber Bragg grating temperature sensor array (51) is arranged in the hot spot area of ​​the iron core winding unit (1); A triaxial MEMS vibration sensor (52) is mounted on the surface of the yoke of the main magnetic circuit; The ultra-high frequency partial discharge detection module (53) is sleeved on the outside of the output end of the high voltage winding (14), with a detection bandwidth of 300MHz-1.5GHz.

8. The dry-type transformer for semiconductor equipment as described in claim 7, characterized in that, The detection data of the fiber Bragg grating temperature sensor array (51) and the distributed flow control valve (33) form a closed loop control. When the temperature at any monitoring point exceeds 65°C, the flow rate of the corresponding cooling circuit is automatically increased.

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