Power module having a multi-level metal frame

Abstract

A power module includes a substrate having a patterned metallization on an electrically insulating body; a plurality of first power semiconductor dies attached to the first metal islands of the patterned metallization; a plurality of second power semiconductor dies attached to the second metal islands of the patterned metallization; a molding compound at least partially embedded in the substrate, the first power semiconductor die, and the second power semiconductor die; and a multi-level metal frame partially embedded in the molding compound and disposed over the substrate. The multi-level metal frame includes a plurality of power terminals exposed at a side of the molding compound facing away from the patterned metallization and transitioning between two or more different levels to electrically interconnect the first power semiconductor die and the second power semiconductor die in a half-bridge or full-bridge configuration.

Description

Technical Field

[0001] The present disclosure relates to a power module having a multi-level metal frame including power terminals. Background Art

[0002] Molded power semiconductor modules include power semiconductor dies embedded in a molding compound and electrically interconnected to form the power converter components of a power electronic device, such as a half-bridge or full-bridge converter. Signal and power terminals typically extend from one or more sides of the molding compound. The power terminals are connected to bus bars, and the signal terminals are connected to a printed circuit board (PCB) having a gate driver and / or controller IC (integrated circuit) for driving and controlling the power module. Each power terminal is part of an inductive loop, such as a DC+ to AC inductive loop, an AC to DC inductive loop, and a DC+ to DC inductive loop. Long inductive loops result in high stray inductance, which leads to overvoltage conditions and slower switching frequencies at the power module. Shorter inductive loops are a key challenge in power module design. The power terminal design and signal / power wiring on the module substrate are limiting factors. These same factors limit the circuit symmetry that can be achieved in module design.

[0003] Therefore, there is a need for power modules and related power electronic components with lower stray inductance. Summary of the Invention

[0004] According to an embodiment of a power module, the power module includes: a substrate including a patterned metallization on an electrically insulating body; a plurality of first power semiconductor dies attached to a first metal island of the patterned metallization; a plurality of second power semiconductor dies attached to a second metal island of the patterned metallization; a mold compound at least partially embedded with the substrate, the first power semiconductor dies, and the second power semiconductor dies; and a multi-level metal frame partially embedded in the mold compound and disposed above the substrate, wherein the multi-level metal frame includes a plurality of power terminals exposed on a side of the mold compound facing away from the patterned metallization and transitioning between two or more different levels to electrically interconnect the first power semiconductor dies and the second power semiconductor dies in a half-bridge or full-bridge configuration. A power electronics assembly is also described, comprising a plurality of power modules and bus bars attached to the power terminals of the power modules, as well as a method of manufacturing the power module.

[0005] According to an embodiment of a power electronic component for supplying power to a multi-phase load, the power electronic component includes: one or more power modules for each phase of the multi-phase load, each power module including: a substrate including a patterned metallization on an electrically insulating body; a plurality of first power semiconductor dies attached to a first metal island of the patterned metallization; a plurality of second power semiconductor dies attached to a second metal island of the patterned metallization; a mold compound at least partially embedded with the substrate, the first power semiconductor dies, and the second power semiconductor dies; and a multi-level metal frame partially embedded in the mold compound and disposed above the substrate, wherein the multi-level metal frame includes a plurality of power terminals exposed on a side of the mold compound facing away from the patterned metallization and transitioning between two or more different levels to electrically interconnect the first power semiconductor dies and the second power semiconductor dies in a half-bridge or full-bridge configuration, wherein the power electronic component also includes bus bars connected to the exposed portions of the power terminals of the power modules.

[0006] Those skilled in the art will recognize additional features and advantages upon reading the following detailed description, and upon viewing the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The elements of the drawings are not necessarily to scale with respect to each other. Identical reference numerals denote corresponding similar components. Features of the various illustrated embodiments may be combined unless they exclude each other. Embodiments are depicted in the drawings and described in detail in the following description.

[0008] Figure 1A A side perspective view of an embodiment of a power module is shown.

[0009] Figure 1B A top view of the power module is shown.

[0010] Figure 1C Shown along Figure 1B A cross-sectional view of the power module along line marked AA in FIG.

[0011] Figure 1D Shown along Figure 1B A cross-sectional view of the power module along the line marked BB in FIG.

[0012] Figures 2A to 2C Each shows the Figures 1A to 1D A top view (left side of the figure) and a side perspective view (right side of the figure) of a power module during different phases are shown.

[0013] Figure 3A shows a top view of a power module according to another embodiment, Figure 3B Shown along Figure 3A A cross-sectional view of the power module along the line marked AA in FIG. Figure 3C Shown along Figure 3A A cross-sectional view of the power module along the line marked BB in FIG.

[0014] Figure 4 A side perspective view of a power module according to another embodiment is shown.

[0015] Figures 5A to 5C Each shows the Figure 4 A top view (left side of the figure) and a side perspective view (right side of the figure) of a power module during different phases are shown.

[0016] Figures 6 to 9 A side perspective view of a power module according to additional embodiments is shown.

[0017] Figure 10 A partial cross-sectional view of a power module is shown in the area of a single screw-type or bolt-type power terminal connector.

[0018] Figure 11 A partial cross-sectional view of a power module is shown in the area where laser welded bus bar connections are formed to exposed portions of power terminals of the power module.

[0019] Figure 12 A partial cross-sectional view of a power module is shown in the area of forming laser welded bus bar connections to exposed portions of power terminals of the power module according to another embodiment.

[0020] Figure 13 A top view of a power electronics assembly according to an embodiment is shown.

[0021] Figure 14 A top view of a power electronics component according to another exemplary embodiment is shown. DETAILED DESCRIPTION

[0022] Embodiments described herein provide a molded power module design with low stray inductance (e.g., less than 10nH, less than 5nH, less than 3nH, or even less than 2nH). This low stray inductance is achieved by using a multi-level metal frame to implement the power terminals of the molded module. The power terminals have a shorter length compared to conventional power module terminals that protrude from one or more sides of the mold compound. Instead, the power terminals are exposed for connection to the side of the mold compound that faces away from the die carrier (substrate) that is at least partially embedded in the mold compound. This configuration reduces the length of the power terminals, thereby reducing the module stray inductance.

[0023] Power terminals transition between two or more different levels to electrically interconnect power semiconductor die attached to the substrate in a half-bridge or full-bridge configuration. The multi-level metal frame can be designed so that power terminals at different potentials have a certain degree of vertical overlap, further reducing module stray inductance. Together with a separate metal frame for power module signal connections, the multi-level metal frame enables highly symmetrical power, gate, and signal routing, which more evenly distributes current among the power semiconductor die included in the module and reduces dead time requirements.

[0024] Exemplary embodiments of power module designs and corresponding manufacturing methods are described below with reference to the accompanying drawings. Unless explicitly stated otherwise, any power module embodiments described herein may be used interchangeably.

[0025] Figure 1A A side perspective view of an embodiment of a power module 100 is shown. Figure 1B A top view of the power module 100 is shown. Figure 1C Shown along Figure 1B FIG. 1 is a cross-sectional view of the power module 100 along line AA. Figure 1D Shown along Figure 1B FIG1 is a cross-sectional view of a power module 100 taken along line BB in FIG1. The power module 100 may be part of a power electronic assembly used in various power applications, such as a DC / AC inverter, a DC / DC converter, an AC / DC converter, a DC / AC converter, an AC / AC converter, a multi-phase inverter, an H-bridge, a DC motor drive, etc.

[0026] The power module 100 includes a substrate 102 having a patterned first metallization 104 on an electrically insulating body 106. The substrate 102 may also have a second metallization 108 on a side of the electrically insulating body 106 opposite the patterned first metallization 104. The substrate 102 may be a direct copper bonding (DCB) substrate, an active metal brazing (AMB) substrate, or an insulated metal (IMS) substrate, wherein in each case, the electrically insulating body 106 (e.g., a ceramic body) separates the first metallization 104 and the second metallization 108 of the substrate 102 from each other.

[0027] The first metallization 104 of the substrate 102 is patterned to ensure proper isolation and signal routing for power electronics implemented using the power module 100. Exemplary electrical connections are described in more detail later in the context of a half-bridge. However, a half-bridge is only one example of a power electronics device that can be implemented using the power module 100. The first metallization 104 of the substrate 102 can be patterned in a manner different from that shown in the figures to facilitate electrical connections for any type of power electronics implemented using the power module 100.

[0028] The power module 100 also includes a first power semiconductor die 110 attached to a first metal island 112 of the patterned first metallization 104, and a second power semiconductor die 114 attached to a second metal island 116 of the patterned first metallization 104. In one embodiment, the power semiconductor dies 110, 114 are vertical power transistor dies. For vertical power transistor dies, the primary current flow path is between the front side and the back side of each die 110, 114 (along the Figures 1A to 1D The drain pad is typically located on the back side of the die, with the gate and source pads (and optionally one or more sense pads) on the front side of the die. Additional types of semiconductor dies may be included in power module 100, such as power diode dies, logic dies, controller dies, gate driver dies, etc.

[0029] In one embodiment, the power semiconductor dies 110 and 114 are SiC power MOSFET (metal oxide semiconductor field effect transistor) dies. Alternatively, the power semiconductor dies 110 and 114 may be Si power MOSFET dies, HEMT (high electron mobility transistor) dies, IGBT (insulated gate bipolar transistor) dies, JFET (junction field effect transistor) dies, etc. The first power semiconductor die 110 may be the same or a different type of die as the second power semiconductor die 114.

[0030] The molding compound 118 is at least partially embedded with the substrate 102, the first power semiconductor die 110, and the second power semiconductor die 114. The molding compound 118 is a plastic encapsulant that can be formed from an organic resin such as an epoxy resin. The plastic encapsulant can include fillers such as non-melting inorganic materials. A catalyst can be used to accelerate the curing reaction of the organic resin. Other materials (e.g., flame retardants, adhesion promoters, ion traps, stress relievers, colorants, etc.) can be added to the plastic encapsulant as appropriate. The molding compound 118 can be formed by injection molding, compression molding, film assisted molding (FAM), reaction injection molding (RIM), resin transfer molding (RTM), blow molding, etc.

[0031] The multi-level metal frame 120 is partially embedded in the mold compound 118 and disposed over the substrate 102. Figures 1A to 1D In the embodiment, the multi-level metal frame 120 is disposed above the substrate 102 in the vertical (z) direction. The front (top) surface of the substrate 102 forms a Figures 1A to 1D The vertical (z) direction is perpendicular to the horizontal plane, where the horizontal plane is defined by Figures 1A to 1D The x and y directions are defined in .

[0032] The multi-level metal frame 120 includes module power terminals 122, 124, 126 exposed at a side of the mold compound 118 facing away from the patterned first metallization 104 of the substrate 102. The module power terminals 122, 124, 126 transition between two or more different levels L1, L2, L3 to electrically interconnect the first power semiconductor die 110 and the second power semiconductor die 114 in a half-bridge or full-bridge configuration. The multi-level metal frame 120 can be a multi-level lead frame. The levels, level transitions, and power terminal features of the multi-level metal frame 120 can be produced by metal processing techniques such as stamping, punching, etching, embossing, etc. The multi-level metal frame 120 can include a core metal area having one or more layers or coatings (e.g., an adhesion-promoting layer, an anti-corrosion layer, etc.).

[0033] In the case of a half-bridge configuration, the first power semiconductor die 110 can be electrically coupled in parallel to form the high-side switching device of the half-bridge, and the second power semiconductor die 114 can be electrically coupled in parallel to form the low-side switching device of the half-bridge. Continuing with the half-bridge example, the multi-level metal frame 120 can provide a high-side (DC+) power terminal 122 for providing a high-side DC current path to the high-side switching device, a low-side (DC-) terminal for providing a low-side DC current path to the low-side switching device, and a phase (AC) terminal 126 for providing a phase or quasi-AC current path to the switching node between the high-side switching device and the low-side switching device. The power terminal configuration of the multi-level metal frame 120 can be designed for other types of power circuit configurations.

[0034] In each case, as otherwise in Figures 1A to 1D The power terminals 122, 124, 126 have a shorter length than conventional power module terminals that protrude from one or more sides of the mold compound 118 in the x and / or y directions. Instead, the power terminals are exposed to Figures 1A to 1D The power terminals 122, 124, and 126 are connected to the front (top) side of the mold compound 118 in the z-direction. This configuration reduces the length of the power terminals 122, 124, and 126, thereby reducing the module stray inductance. In one embodiment, by utilizing the multi-level metal frame 120, the power module 100 has a stray inductance of less than 10 nH, less than 5 nH, less than 3 nH, or even less than 2 nH.

[0035] like Figure 1B As shown, the multi-level metal frame 120 may be laterally limited to the footprint of the substrate 102. That is, the multi-level metal frame 120 may not extend laterally beyond the outer edge or perimeter of the substrate 102 in either the x-direction or the y-direction. This configuration further reduces the length of at least some of the power terminals 122, 124, 126, and accordingly reduces module stray inductance.

[0036] like Figure 1C and 1D As shown, the DC+ terminal 122 of the multi-level metal frame 120 transitions from the first level L1 to the second level L2 in the vertical (z) direction. The DC terminal 124 of the multi-level metal frame 120 transitions from the first level L1 to the third level L3 located between the first level L1 and the second level L2. The phase (AC) terminals 126 of the multi-level metal frame 120 transition from the first level L1 to the third level L3 and the second level L2. At the first level L1, the DC+ terminal 122, the DC- terminal 124, and the phase (AC) terminals 126 are each uncovered by the mold compound and are therefore externally accessible on the front (top) side of the mold compound 118 in the z-direction.

[0037] Further Figure 1C and Figure 1D As shown, at the second level L2, the DC+ terminal 122 of the multi-level metal frame 120 is attached to the first metal island 112 of the patterned substrate metallization 104, and the phase (AC) terminal 126 of the multi-level metal frame 120 is attached to the second metal island 116 of the patterned substrate metallization 104. At the third level L3, the DC terminal 124 of the multi-level metal frame 120 is attached to the load pad 128 of the second power semiconductor die 114, and the phase (AC) terminal 126 of the multi-level metal frame 120 is attached to the load pad 130 of the first power semiconductor die 110.

[0038] In one embodiment, the first power semiconductor die 110 and the second power semiconductor die 114 are power MOSFET dies. According to this embodiment, the drain pad 132 of each first power semiconductor die 110 is attached to the first metal island 112 of the patterned substrate metallization 104 at the back side of the first power semiconductor die 110. The first metal island 112 of the patterned substrate metallization 104 provides an electrical connection between the drain pad 132 of each first power semiconductor die 110 and the DC+ terminal 122 of the multi-level metal frame 120. Each first power semiconductor die 110 also has at least a source pad 130 and a gate pad 134 at the front side of the die 110.

[0039] Continuing with the power MOSFET example, the drain pad 136 of each second power semiconductor die 114 is attached to the second metal island 116 of the patterned substrate metallization 104 at the back side of the second power semiconductor die 114. The second metal island 116 of the patterned substrate metallization 104 provides an electrical connection between the drain pad 136 of each second power semiconductor die 114 and the phase (AC) terminal 126 of the multi-level metal frame 120. Each second power semiconductor die 114 also has at least a source pad 128 and a gate pad 138 at the front side of the die 114. At the third level L3, the DC-terminal 124 of the multi-level metal frame 120 is attached to the source pad 128 of the second power semiconductor die 114, and the phase (AC) terminal of the multi-level metal frame 120 is attached to the source pad 130 of the first power semiconductor die 110. Solder, diffusion solder, glue, adhesive, etc. can be used to form the corresponding attachments.

[0040] Signal connections to the power module 100 may be made using an additional metal frame 140 that is separate and distinct from the multi-level metal frame 120. Figures 1A to 1D , an additional metal frame 140 is partially embedded in the mold compound 118 and includes a first gate terminal 142 that protrudes from a side 144 of the mold compound 118 and extends along a first edge 146 of the substrate 102. The additional metal frame 140 also includes a second gate terminal 148 that protrudes from the side 144 of the mold compound 118 and extends along a second edge 150 of the substrate 102 opposite the first edge 146. Figures 1A to 1D The gate terminal configuration shown provides better symmetry of the gate signals provided to the power semiconductor dies 110 , 114 . Figures 1A to 1D The illustrated configuration of the patterned substrate metallization 104 similarly provides better power symmetry.

[0041] The first gate terminal 142 of the additional metal frame 140 is electrically connected to a third metal island 152 of the patterned substrate metallization 104. The third metal island 152 of the patterned substrate metallization 104 is electrically connected to the gate pad 134 of the first power semiconductor die 110 through one or more electrical conductors 154 (e.g., wire straps, metal clips, bond wires, etc.). The second gate terminal 148 of the additional metal frame 140 is electrically connected to a fourth metal island 156 of the patterned substrate metallization 104. The fourth metal island 156 is electrically connected to the gate pad 138 of the second power semiconductor die 114 through one or more electrical conductors 158 (e.g., wire straps, metal clips, bond wires, etc.).

[0042] exist Figures 1A to 1D, the third metal island 152 of the patterned substrate metallization 104 is laterally interposed between the first edge 146 of the substrate 102 and the first metal island 112 of the patterned substrate metallization 104. The fourth metal island 156 of the patterned substrate metallization 104 is laterally interposed between the second edge 150 of the substrate 102 and the second metal island 116 of the patterned substrate metallization 104. According to this embodiment, the first gate terminal 142 and the second gate terminal 148 of the additional metal frame 140 are arranged in a first lateral direction ( Figures 1A to 1D The multi-level metal frame 120 extends longitudinally in the first lateral direction (y-direction in FIG), and the portion of each power terminal 122, 124, 126 exposed at the top (front) side of the mold compound 118 also extends longitudinally in the first lateral direction.

[0043] The additional metal frame 140 may include additional terminals. For example, a first drain sense terminal 160 may be electrically connected to the first metal island 112 of the patterned substrate metallization 104 via an electrical conductor 162 (e.g., a wire strap, a metal clip, one or more bond wires, etc.). A second drain sense terminal 164 may be electrically connected to the second metal island 116 of the patterned substrate metallization 104 via an electrical conductor 166 (e.g., a wire strap, a metal clip, one or more bond wires, etc.). A source sense terminal 168 may be electrically connected to the source pad 128 of the second power semiconductor die 114 via an electrical conductor 170 (e.g., a wire strap, a metal clip, one or more bond wires, etc.). The temperature sensing terminals 172, 174 can be electrically connected to the fifth metal island 176 and the sixth metal island 178 of the patterned substrate metallization 104 via corresponding electrical conductors 180, 182 (e.g., wire straps, metal clips, one or more bond wires, etc.) to sense the voltage across a temperature sensor 184 (e.g., an NTC (negative temperature coefficient) thermistor). The power module 100 may include additional terminals, components, etc.

[0044] Figures 2A to 2C Each shows the Figures 1A to 1D The power module 100 is shown in a top view (left side of the figure) and a side perspective view (right side of the figure) during different stages.

[0045] Figure 2AA substrate 102 is shown with a first power semiconductor die 110 attached to a first metal island 112 of a patterned substrate metallization 104, and a second power semiconductor die 114 attached to a second metal island 116 of the patterned substrate metallization 104. The dies 110, 114 may be attached to the patterned first metallization 104 of the substrate 102 by soldering, diffusion soldering, brazing, brazing, gluing, adhering, etc. During this stage of the module manufacturing process, the terminals 142, 148, 160, 164, 172, 174 of the additional metal frame 140 may be attached to the patterned first metallization 104 of the substrate 102.

[0046] Figure 2B The power terminals 122, 124, 126 of the multi-level metal frame 120 are shown attached to corresponding pads 128, 130 of respective dies 110, 114 and respective metal islands 112, 116 of the patterned substrate metallization 104. The power terminals 122, 124, 126 of the multi-level metal frame 120 may be attached by welding, diffusion welding, brazing, soldering, gluing, adhering, etc.

[0047] Figure 2C The power module 100 is shown after the molding process. The mold compound 118 is at least partially embedded with the substrate 102, the first power semiconductor die 110 and the second power semiconductor die 114. The multi-level metal frame 120 is partially embedded in the mold compound 118 so that the power terminals 122, 124, 126 of the multi-level metal frame 120 are exposed to the outside. Figure 2C The power terminals 122, 124, 126 are contacted at the front (top) side of the mold compound 118 in the z-direction in FIG. , which reduces the length of the power terminals 122, 124, 126 and, therefore, reduces the module stray inductance. The signal terminals 142, 148, 160, 164, 172, 174 of the additional metal frame 140 protrude from the side 144 of the mold compound 118, so that the power terminals 122, 124, 126 and the signal terminals 142, 148, 160, 164, 172, 174 are externally accessible from different sides of the power module 100.

[0048] Figure 3A 1 shows a top view of a power module 100 according to another embodiment, Figure 3B Shown along Figure 3A A cross-sectional view of the power module 100 along the line marked AA in FIG. Figure 3C Shown along Figure 3A FIG. 1 is a cross-sectional view of the power module 100 along the line marked BB in FIG. Figure 3A 、 3B and 3C are respectively Figure 1B 、 1C Same view as 1D.

[0049] exist Figure 3A 、 3B In Figures 3 and 3C, the first (DC+) power terminal 122 of the multi-level metal frame 120 vertically overlaps a portion 124_1 of the second (DC-) power terminal 124 of the multi-level metal frame 120 that is attached to the load pad 128 of the second power semiconductor die 114. Alternatively or in combination, the first (DC+) power terminal 122 of the multi-level metal frame 120 may vertically overlap a portion 126_1 of the phase (AC) terminal of the multi-level metal frame 120 that is attached to the second metal island 116 of the patterned substrate metallization 104. The overlap between the DC+ terminal 122 and the DC- terminal 124 and / or the DC+ terminal 122 and the AC terminal 126 of the multi-level metal frame 120 further reduces module stray inductance because these terminals are at different potentials.

[0050] Figure 4 A side perspective view of a power module 100 according to another embodiment is shown. Figures 5A to 5C Each shows the Figure 4 The power module 100 is shown in a top view (left side of the figure) and a side perspective view (right side of the figure) during different stages.

[0051] Figure 5A A substrate 102 is shown with a first power semiconductor die 110 attached to a first metal island 112 of a patterned substrate metallization 104, and a second power semiconductor die 114 attached to a second metal island 116 of the patterned substrate metallization 104. The dies 110, 114 may be attached to the patterned first metallization 104 of the substrate 102 by soldering, diffusion soldering, brazing, brazing, gluing, adhering, etc. During this stage of the module manufacturing process, the terminals 142, 148, 160, 164, 172, 174 of the additional metal frame 140 may be attached to the patterned first metallization 104 of the substrate 102.

[0052] exist Figures 4 to 5C , the third metal island 152 and the fourth metal island 156 of the patterned substrate metallization 104 are laterally interposed between the first metal island 112 and the second metal island 116 of the patterned substrate metallization 104. According to this embodiment, the first gate terminal 142 and the second gate terminal 148 of the additional metal frame 140 are arranged in a first lateral direction ( Figures 4 to 5C The multi-level metal frame 120 extends longitudinally in a second lateral direction (y-direction in FIG1 ), and a portion of each power terminal 122, 124, 126 of the multi-level metal frame 120 exposed on a side of the mold compound 118 facing away from the patterned substrate metallization 104 is extended longitudinally in a second lateral direction ( Figures 4 to 5C Extends longitudinally in the x-direction (in the figure).

[0053] Likewise Figures 4 to 5C As shown, the middle portion 152_1 of the third metal island 152 of the patterned substrate metallization 104 is laterally interposed between the first metal island 112 of the patterned substrate metallization 104 and the middle portion 156_1 of the fourth metal island 156 of the patterned substrate metallization 104. The middle portion 156_1 of the fourth metal island 156 of the patterned substrate metallization 104 is laterally interposed between the second metal island 116 of the patterned substrate metallization 104 and the middle portion 152_1 of the third metal island 152 of the patterned substrate metallization 104.

[0054] Figure 5B The multi-level metal frame 120 is shown attached to the power terminals 122, 124, 126 of the corresponding pads 128, 130 of the respective dies 110, 114 and the respective metal islands 112, 116 of the patterned substrate metallization 104. The power terminals 122, 124, 126 of the multi-level metal frame 120 may be attached by welding, diffusion welding, brazing, soldering, gluing, adhering, etc.

[0055] Figure 5C The power module 100 is shown after the molding process. The mold compound 118 is at least partially embedded with the substrate 102, the first power semiconductor die 110 and the second power semiconductor die 114. The multi-level metal frame 120 is partially embedded in the mold compound 118 so that the power terminals 122, 124, 126 of the multi-level metal frame 120 are exposed to the outside. Figure 2C The power terminals 122, 124, 126 are contacted at the front (top) side of the mold compound 118 in the z-direction in FIG. , which reduces the length of the power terminals 122, 124, 126 and, therefore, reduces the module stray inductance. The signal terminals 142, 148, 160, 164, 172, 174 of the additional metal frame 140 protrude from the side 144 of the mold compound 118, so that the power terminals 122, 124, 126 and the signal terminals 142, 148, 160, 164, 172, 174 are externally accessible from different sides of the power module 100.

[0056] like Figures 4 to 5C As shown, the multi-level metal frame 120 can be laterally limited to the footprint of the mold compound 118. That is, the multi-level metal frame 120 can not extend laterally beyond the outer edge or perimeter of the mold compound 118 in the x-direction or y-direction. This configuration further reduces the length of at least some of the power terminals 122, 124, 126, and accordingly reduces the module stray inductance.

[0057] exist Figures 1A to 5CIn the embodiment, the first DC terminal 122 of the multi-level metal frame 120 may be between the second DC terminal 124 and the phase terminal 126 of the multi-level metal frame 120 at the first (exposed) level L1, for example, Figures 1A to 3C In another embodiment, the phase terminal 126 of the multi-level metal frame 120 may be between the first DC terminal 122 and the second DC terminal 124 of the multi-level metal frame 120 at the first (exposed) level L1, for example, Figures 4 to 5C In yet another embodiment, the second DC terminal 124 of the multi-level metal frame 120 may be located between the first DC terminal 122 and the phase terminal 126 of the multi-level metal frame 120 at the first (exposed) level L1. In each of these embodiments, the exposed portions of the power terminals 122, 124, 126 of the multi-level metal frame 120 may be oriented in the y-lateral direction (e.g., as shown). Figure 2C ) or the x-direction (e.g., as Figure 5C shown) and extending longitudinally thereon.

[0058] exist Figures 1A to 5C In FIG. 1 , the first DC terminal 122, the second DC terminal 124, and the phase terminal 126 of the multi-level metal frame 120 are each exposed along a side of the mold compound 118 facing away from the patterned substrate metallization 104. This terminal configuration allows the power module 100 to be surface mounted to a bus bar. However, the power module 100 may have other power terminal connection configurations for interfacing with a bus bar, such as described below in conjunction with FIG. Figures 6 to 9 described.

[0059] Figure 6 FIG. 1 shows a side perspective view of a power module according to an embodiment. Figure 6 , a first DC terminal 122, a second DC terminal 124, and a phase terminal 126 of the multi-level metal frame 120 each protrude from a side of the mold compound 118 facing away from the patterned substrate metallization 104. The protruding portions of the power terminals 122, 124, 126 form tab-like interfaces for connecting to busbars.

[0060] Figure 7 FIG. 1 shows a side perspective view of a power module according to an embodiment. Figure 7 In the embodiment, the first DC terminal 122, the second DC terminal 124 and the phase terminal 126 of the multi-level metal frame 120 form a Figure 6 The same tab-like interface as in FIG, but the tabs may have a different profile and optional holes 200 for connection to bus bars.

[0061] Figure 8 FIG. 1 shows a side perspective view of a power module according to an embodiment. Figure 8, the first DC terminal 122, the second DC terminal 124, and the phase terminal 126 of the multi-level metal frame 120 each have an exposed screw-type, bolt-type, press-fit-type, or rivet-type connector 202 that protrudes from a side of the mold compound 118 facing away from the patterned substrate metallization 104. That is, the protruding connector portion 202 of the power terminals 122, 124, 126 can be in the form of a screw, bolt, press-fit pin, or rivet, and provides an interface for connecting to a bus bar.

[0062] Figure 9 FIG. 1 shows a side perspective view of a power module according to an embodiment. Figure 9 , the first DC terminal 122, the second DC terminal 124, and the phase terminal 126 of the multi-level metal frame 120 each have an exposed screw-type, bolt-type, press-fit-type, or rivet-type surface connector 204 formed in an exposed portion of the terminals 122, 124, 126 at a side of the mold compound 118 facing away from the patterned substrate metallization 104. That is, the exposed surface connector 204 of the power terminals 122, 124, 126 may be in the form of a hole for receiving a screw, bolt, press-fit pin, or rivet, and provide an interface for connection to a bus bar.

[0063] Figure 10 A partial cross-sectional view of the power module 100 is shown in the area of a single screw-type or bolt-type power terminal connector 202 protruding from the side of the mold compound 118 facing away from the patterned substrate metallization 104. The protruding screw-type or bolt-type power terminal connector 202 has the form of a screw or bolt and provides an interface for connecting to a bus bar. The protruding screw-type or bolt-type power terminal connector 202 can be welded, soldered, brazed, screwed, or riveted to a corresponding power terminal of the multi-level metal frame 120.

[0064] exist Figure 10 , a protruding screw-type or bolt-type power terminal connector 202 is shown having a rivet or press-fit bolt-type connection to the second DC terminal 124 of the multi-level metal frame 120. For example, the rivet connection can be achieved using a rivet nut 204 that is inserted and positioned completely from one side of the second DC terminal 124 of the multi-level metal frame 120. The rivet nut 204 has internal threads that provide a secure mount for the threaded bolt 206. Alternatively, friction drilling can be used to form an opening in the second DC terminal 124 of the multi-level metal frame 120, and the bolt 206 can be threaded or press-fit into the opening. Other techniques can also be used to provide a screw-type, bolt-type, press-fit, or rivet-type connector for any of the power terminals 122, 124, 126 of the multi-level metal frame 120.

[0065] The other power terminals 122, 126 of the multi-level metal frame 120 may also have Figure 10 The illustrated screw or bolt type power terminal connector 202 , or a different type of connector for interfacing with a bus bar. More generally, the power terminals 122 , 124 , 126 of the multi-level metal frame 120 may use the same or different bus bar connector types.

[0066] Figure 11 A partial cross-sectional view of the power module 100 is shown in an area where a laser welded busbar connection is formed to the second power terminal 124 of the multi-level metal frame 120 at a side of the mold compound 118 facing away from the patterned substrate metallization 104. The exposed portion of the second power terminal 124 is laser welded 300 to Figure 11 In one embodiment, the mold compound 118 has an undercut 302 in each area where the power terminals 122, 124, 126 of the multi-level metal frame 120 are exposed on the side of the mold compound 118 facing away from the patterned substrate metallization 104. The undercut 302 allows for laser welding 300 without damaging the mold compound 118.

[0067] Figure 12 A partial cross-sectional view of the power module 100 is shown in the area of a laser-welded busbar connection formed on the side of the mold compound 118 facing away from the patterned substrate metallization 104 to the second power terminal 124 of the multi-level metal frame 120 according to another embodiment. A thermal insulation foil / coating 400 can be provided on the underside of each power terminal 122, 124, 126 of the multi-level metal frame 120 being laser welded 300 to protect the adjacent mold compound 118 during the laser welding 300. The thermal insulation foil / coating 400 can be a standard thermal interface material, such as thermal grease, polyimide film, etc. Another non-metallic material with good heat capacity can be attached to the underside to store / buffer the heat energy generated during the laser welding. The mold compound 118 may or may not have an undercut 302 in each area where the power terminals 122 , 124 , 126 of the multi-level metal frame 120 are exposed and laser welded 300 at a side of the mold compound 118 facing away from the patterned substrate metallization 104 .

[0068] Figures 1A to 12 The power module 100 shown can be included in a power electronics assembly. The power electronics assembly can include multiple power modules 100, for example, to power two or more phases of a multi-phase load such as a motor drive system. The power modules 100 are connected to bus bars that transmit power between the power modules 100 and the load.

[0069] Figure 13FIG2 shows a top view of a power electronic assembly 500 according to an embodiment. In the example shown, the power electronic assembly 500 drives a load (not shown) having three phases U, V, W, such as a motor drive system. Figure 13 , the power electronics assembly 500 includes a single power module 100 for each phase U, V, or W of the load. The exposed portions of the power terminals 122, 124, and 126 of each power module 100 are connected to a bus bar 502. The bus bar 502 includes a first metal ribbon or strip 504 that provides a DC+ potential to the exposed portions of the first power terminal 122 of each power module 100. The bus bar 502 also includes a second metal ribbon or strip 506 that provides a DC- potential to the exposed portions of the second power terminal 124 of each power module 100. The bus bar 502 also includes separate metal ribbons or strips 508_n that form respective phase connections (U, V, or W) to the exposed portions of the phase (AC) terminals 126 of each power module 100, where n corresponds to the respective phase supported by the power electronics assembly 500. The power modules 100 can have any of the connector types previously described herein to facilitate connection to the bus bar 502.

[0070] The power electronics assembly 500 also includes a control board 110 having gate drivers and control circuitry for driving and controlling the power semiconductor dies 110, 114 included in the power module 100. The control board 110 is connected to terminals of the power module 100 provided by an additional metal frame 140 included in the module 100. The control board 110 may be connected to the terminals of the power module 100 by welding, brazing, press-fitting, etc. The metallization 108 at the bottom side of the power module 100 may be contacted by a heat exchanger 512 (e.g., an actively or passively cooled heat sink) to extract heat dissipated by the power semiconductor dies 110, 114 during operation. The busbars 502, the control board 510, and the heat exchanger 512 are connected to the power module 100 by means of an additional metal frame 140 included in the module 100. The control board 110 may be connected to the terminals of the power module 100 by means of welding, brazing, press-fitting, etc. Figure 13 5. The power modules 100 are schematically shown as dashed rectangles in FIG. 5 to provide an unobstructed view of the interfaces between the power module 100 and the bus bar 502, the control board 510, and the heat exchanger 512.

[0071] Figure 14 FIG. 4 shows a top view of a power electronic component 500 according to another embodiment. Figure 14 In FIG, the power electronics assembly 500 includes two power modules 100 for each phase U, V, W of the load. More generally, the power electronics assembly 500 may have one or more power modules 100 per phase U, V, W, where the number of modules per phase depends on the phase current requirement and the current rating of the power modules 100.

[0072] Although the present disclosure is not limited in this regard, the following numbered examples illustrate one or more aspects of the present disclosure.

[0073] Example 1: A power module comprises: a substrate comprising a patterned metallization portion on an electrically insulating body; a plurality of first power semiconductor dies attached to a first metal island of the patterned metallization portion; a plurality of second power semiconductor dies attached to a second metal island of the patterned metallization portion; a molding compound at least partially embedded with the substrate, the first power semiconductor dies, and the second power semiconductor dies; and a multi-level metal frame partially embedded in the molding compound and disposed above the substrate, wherein the multi-level metal frame comprises a plurality of power terminals exposed at a side of the molding compound facing away from the patterned metallization portion and transitioning between two or more different levels to electrically interconnect the first power semiconductor dies and the second power semiconductor dies in a half-bridge or full-bridge configuration.

[0074] Example 2: The power module of Example 1, wherein the power module has a stray inductance less than 5 nH.

[0075] Example 3: The power module of Example 1 or 2, wherein the multi-level metal frame is laterally limited to a footprint of the substrate.

[0076] Example 4: The power module of any one of Examples 1 to 3, wherein the plurality of power terminals of the multi-level metal frame includes a first DC terminal, a second DC terminal, and a phase terminal.

[0077] Example 5: A power module according to Example 4, wherein the first DC terminal transitions from the first level to the second level, wherein the second DC terminal transitions from the first level to a third level between the first level and the second level, wherein the phase terminal transitions from the first level to the third level and the second level, wherein at the first level, the first DC terminal, the second DC terminal and the phase terminal are each not covered by the molding compound.

[0078] Example 6: A power module according to Example 5, wherein at a second level, a first DC terminal is attached to a first metal island of the patterned metallization portion and a phase terminal is attached to a second metal island of the patterned metallization portion, and wherein at a third level, a second DC terminal is attached to a load pad of the second power semiconductor die and a phase terminal is attached to a load pad of the first power semiconductor die.

[0079] Example 7: A power module according to Example 6, wherein the first power semiconductor die is a power MOSFET die each having a drain pad attached to a first metal island of the patterned metallization portion at a first side of the first power semiconductor die and a source pad and a gate pad at a second side opposite to the first side, wherein the second power semiconductor die is a power MOSFET die each having a drain pad attached to a second metal island of the patterned metallization portion at a first side of the second power semiconductor die and a source pad and a gate pad at a second side opposite to the first side, wherein at a third level, a second DC terminal is attached to the source pad of the second power semiconductor die, and a phase terminal is attached to the source pad of the first power semiconductor die.

[0080] Example 8: The power module of Example 6 or 7, wherein the first DC terminal vertically overlaps a portion of the second DC terminal attached to a load pad of the second power semiconductor die.

[0081] EXAMPLE 9 The power module of any of Examples 5 to 8, wherein at the first level, the first DC terminal is between the second DC terminal and the phase terminal.

[0082] Example 10: The power module of any of Examples 5 to 9, wherein at the first level, the second DC terminal is between the first DC terminal and the phase terminal.

[0083] EXAMPLE 11 The power module of any of Examples 5 to 10, wherein at the first level, the phase terminal is between the first DC terminal and the second DC terminal.

[0084] Example 12: A power module according to any one of Examples 5 to 11, wherein the first metal island and the second metal island of the patterned metallization portion have a longitudinal extension in the first lateral direction, and wherein at the first level, the first DC terminal, the second DC terminal and the phase terminal each have a longitudinal extension in the first lateral direction.

[0085] EXAMPLE 13 The power module of any of Examples 5 to 12, wherein the first DC terminal vertically overlaps a portion of the phase terminal attached to the second metal island of the patterned metallization.

[0086] EXAMPLE 14 The power module of any of Examples 4 to 13, wherein the first DC terminal, the second DC terminal, and the phase terminal each extend exposed along a side of the mold compound facing away from the patterned metallization.

[0087] EXAMPLE 15 The power module of any of Examples 4 to 13, wherein the first DC terminal, the second DC terminal, and the phase terminal each protrude from a side of the mold compound facing away from the patterned metallization.

[0088] Example 16: The power module of any of Examples 4 to 15, wherein the first DC terminal, the second DC terminal, and the phase terminal each have an exposed screw-type, bolt-type, press-fit-type, or rivet-type connector at a side of the mold compound facing away from the patterned metallization.

[0089] Example 17: The power module of any of Examples 4 to 16, wherein the mold compound has an undercut in each area where the first DC terminal, the second DC terminal, and the phase terminal are exposed at a side of the mold compound facing away from the patterned metallization.

[0090] Example 18: The power module of any one of Examples 1 to 17 further includes: an additional metal frame partially embedded in the mold compound and including: a first gate terminal protruding from a side of the mold compound and extending along a first edge of the substrate; and a second gate terminal protruding from a side of the mold compound and extending along a second edge of the substrate opposite to the first edge, wherein the first gate terminal is electrically connected to a third metal island of the patterned metallization portion, and the third metal island is electrically connected to a gate pad of the first power semiconductor die, wherein the second gate terminal is electrically connected to a fourth metal island of the patterned metallization portion, and the fourth metal island is electrically connected to a gate pad of the second power semiconductor die.

[0091] Example 19: A power module according to Example 18, wherein the third metal island of the patterned metallization portion is laterally located between the first edge of the substrate and the first metal island of the patterned metallization portion, and wherein the fourth metal island of the patterned metallization portion is laterally located between the second edge of the substrate and the second metal island of the patterned metallization portion.

[0092] Example 20: The power module of Example 18, wherein the third and fourth metal islands of the patterned metallization are laterally interposed between the first and second metal islands of the patterned metallization.

[0093] Example 21: A power module according to Example 20, wherein the middle portion of the third metal island of the patterned metallization portion is laterally interposed between the first metal island of the patterned metallization portion and the middle portion of the fourth metal island of the patterned metallization portion, and wherein the middle portion of the fourth metal island of the patterned metallization portion is laterally interposed between the second metal island of the patterned metallization portion and the middle portion of the third metal island of the patterned metallization portion.

[0094] Example 22: A power module according to any one of Examples 18 to 21, wherein the first gate terminal and the second gate terminal extend longitudinally in a first lateral direction, and wherein the portion of each power terminal exposed at a side of the mold compound facing away from the patterned metallization portion extends longitudinally in the first lateral direction.

[0095] Example 23: A power module according to any one of Examples 18 to 21, wherein the first gate terminal and the second gate terminal extend longitudinally in a first lateral direction, and wherein the portion of each power terminal exposed at a side of the mold compound facing away from the patterned metallization portion extends longitudinally in a second lateral direction transverse to the first lateral direction.

[0096] Example 24: The power module of any of Examples 1 to 23, wherein the multi-level metal frame is laterally limited to a footprint of the molding compound.

[0097] Example 25: A power electronic component for powering a multi-phase load, the power electronic component comprising: one or more power modules for each phase of the multi-phase load, each power module comprising: a substrate comprising a patterned metallization portion on an electrically insulating body; a plurality of first power semiconductor dies attached to a first metal island of the patterned metallization portion; a plurality of second power semiconductor dies attached to a second metal island of the patterned metallization portion; a molding compound at least partially embedded with the substrate, the first power semiconductor dies, and the second power semiconductor dies; and a multi-level metal frame partially embedded in the molding compound and disposed above the substrate, wherein the multi-level metal frame comprises a plurality of power terminals exposed at a side of the molding compound facing away from the patterned metallization portion and transitioning between two or more different levels to electrically interconnect the first power semiconductor dies and the second power semiconductor dies in a half-bridge or full-bridge configuration, wherein the power electronic component further comprises bus bars connected to the exposed portions of the power terminals of the power modules.

[0098] Example 26: A power electronic component according to Example 25, wherein each power module further includes an additional metal frame that is partially embedded in the molding compound and includes: a first gate terminal that protrudes from a side of the molding compound and extends along a first edge of the substrate; and a second gate terminal that protrudes from a side of the molding compound and extends along a second edge of the substrate opposite to the first edge, wherein the first gate terminal is electrically connected to a third metal island of the patterned metallization portion, and the third metal island is electrically connected to a gate pad of the first power semiconductor die, wherein the second gate terminal is electrically connected to a fourth metal island of the patterned metallization portion, and the fourth metal island is electrically connected to a gate pad of the second power semiconductor die, wherein the power electronic component further includes a control board having a gate driver and control circuit for driving and controlling the power semiconductor die included in the power module, and wherein the control board is connected to terminals of the power module provided by the additional metal frame included in the power module.

[0099] Terms such as "first", "second", etc. are used to describe various elements, regions, parts, etc., and are not intended to be limiting. Throughout the specification, the same terms refer to the same elements.

[0100] As used herein, the terms "having," "containing," "comprising," "including," and the like are open-ended terms that indicate the presence of stated elements or features, but do not preclude additional elements or features. The articles "a," "an," and "the" are intended to include the plural as well as the singular, unless the context clearly indicates otherwise.

[0101] Unless expressly stated otherwise, the expression "and / or" should be interpreted as encompassing all possible combinations, both conjunctive and disjunctive. For example, the expression "A and / or B" should be interpreted as meaning only A, only B, or both A and B. Unless expressly stated otherwise, the expression "at least one of..." should be interpreted in the same manner as "and / or." For example, the expression "at least one of A and B" should be interpreted as meaning only A, only B, or both A and B.

[0102] It will be understood that the features of the various embodiments described herein may be combined with each other, unless specifically stated otherwise.

[0103] Although specific embodiments have been shown and described herein, it will be understood by those skilled in the art that various alternative and / or equivalent embodiments may be substituted for the specific embodiments shown and described without departing from the scope of the present invention. This application is intended to cover any modifications or variations of the specific embodiments discussed herein. Accordingly, the present invention is intended to be limited only by the claims and their equivalents.

Claims

1. A power module, comprising: a substrate comprising patterned metallization on an electrically insulating body; a first plurality of power semiconductor dies attached to first metal islands of the patterned metallization; a second plurality of power semiconductor dies attached to second metal islands of the patterned metallization; a mold compound at least partially embedded with the substrate, the first power semiconductor die, and the second power semiconductor die; as well as a multi-level metal frame partially embedded in the molding compound and disposed over the substrate, wherein the multi-level metal frame includes a plurality of power terminals exposed at a side of the mold compound facing away from the patterned metallization portion and transitioning between two or more different levels to electrically interconnect the first power semiconductor die and the second power semiconductor die in a half-bridge or full-bridge configuration.

2. The power module according to claim 1, wherein: The power module has a stray inductance lower than 5 nH.

3. The power module according to claim 1, wherein: The multi-level metal frame is laterally limited to the footprint of the substrate.

4. The power module according to claim 1, wherein: The plurality of power terminals of the multi-level metal frame include a first DC terminal, a second DC terminal, and a phase terminal.

5. The power module according to claim 4, in, The first DC terminal transitions from the first level to the second level, wherein the second DC terminal transitions from the first level to a third level between the first level and the second level, wherein the phase terminals transition from the first level to the third level and the second level, Wherein, at the first level, the first DC terminal, the second DC terminal and the phase terminal are each not covered by the molding compound.

6. The power module according to claim 5, in, At the second level, the first DC terminal is attached to the first metal island of the patterned metallization and the phase terminal is attached to the second metal island of the patterned metallization, Wherein, at the third level, the second DC terminal is attached to the load pad of the second power semiconductor die, and the phase terminal is attached to the load pad of the first power semiconductor die.

7. The power module according to claim 6, in, the first power semiconductor die being a power MOSFET die each having a drain pad attached to the first metal island of the patterned metallization at a first side of the first power semiconductor die and a source pad and a gate pad at a second side opposite the first side, wherein the second power semiconductor die is a power MOSFET die each having a drain pad attached to the second metal island of the patterned metallization at a first side of the second power semiconductor die and a source pad and a gate pad at a second side opposite to the first side, Wherein, at the third level, the second DC terminal is attached to the source pad of the second power semiconductor die, and the phase terminal is attached to the source pad of the first power semiconductor die.

8. The power module according to claim 6, in, The first DC terminal vertically overlaps a portion of the second DC terminal that is attached to the load pad of the second power semiconductor die.

9. The power module according to claim 5, in, At the first level, the first DC terminal is interposed between the second DC terminal and the phase terminal.

10. The power module according to claim 5, in, At the first level, the second DC terminal is interposed between the first DC terminal and the phase terminal.

11. The power module according to claim 5, in, At the first level, the phase terminal is between the first DC terminal and the second DC terminal.

12. The power module according to claim 5, in, The first metal islands and the second metal islands of the patterned metallization have a longitudinal extension in a first lateral direction, and Therein, at the first level, the first DC terminal, the second DC terminal and the phase terminal each have a longitudinal extension in the first transverse direction.

13. The power module according to claim 5, in, The first DC terminal vertically overlaps a portion of the phase terminal that is attached to the second metal island of the patterned metallization.

14. The power module according to claim 4, in, The first DC terminal, the second DC terminal, and the phase terminal each extend exposed along a side of the mold compound facing away from the patterned metallization.

15. The power module according to claim 4, in, The first DC terminal, the second DC terminal, and the phase terminal each protrude from a side of the mold compound facing away from the patterned metallization.

16. The power module according to claim 4, in, The first DC terminal, the second DC terminal, and the phase terminal each have an exposed screw-type, bolt-type, press-fit-type, or rivet-type connector at a side of the mold compound facing away from the patterned metallization.

17. The power module according to claim 4, in, The mold compound has an undercut in each area of the first DC terminal, the second DC terminal, and the phase terminal that is exposed at a side of the mold compound facing away from the patterned metallization.

18. The power module according to claim 1, further comprising: an additional metal frame partially embedded in the molding compound and comprising: a first gate terminal protruding from a side of the mold compound and extending along a first edge of the substrate; and a second gate terminal protruding from the side of the mold compound and extending along a second edge of the substrate opposite the first edge, wherein the first gate terminal is electrically connected to a third metal island of the patterned metallization, and the third metal island is electrically connected to a gate pad of the first power semiconductor die, Wherein, the second gate terminal is electrically connected to a fourth metal island of the patterned metallization, and the fourth metal island is electrically connected to a gate pad of the second power semiconductor die.

19. The power module according to claim 18, in, The third metal island of the patterned metallization is laterally interposed between the first edge of the substrate and the first metal island of the patterned metallization, and The fourth metal island of the patterned metallization is laterally located between the second edge of the substrate and the second metal island of the patterned metallization.

20. The power module according to claim 18, in, The third and fourth metal islands of the patterned metallization are laterally interposed between the first and second metal islands of the patterned metallization.

21. The power module according to claim 20, in, The middle portion of the third metal island of the patterned metallization is laterally interposed between the first metal island of the patterned metallization and the middle portion of the fourth metal island of the patterned metallization, and The middle portion of the fourth metal island of the patterned metallization is laterally located between the second metal island of the patterned metallization and the middle portion of the third metal island of the patterned metallization.

22. The power module according to claim 18, in, The first gate terminal and the second gate terminal extend longitudinally in a first lateral direction, and The portion of each power terminal exposed at a side of the mold compound facing away from the patterned metallization extends longitudinally in the first lateral direction.

23. The power module according to claim 18, in, The first gate terminal and the second gate terminal extend longitudinally in a first lateral direction, and The portion of each power terminal exposed at a side of the mold compound facing away from the patterned metallization extends longitudinally in a second lateral direction transverse to the first lateral direction.

24. The power module according to claim 1, wherein: The multi-level metal frame is laterally limited to the footprint of the molding compound.

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