Automatic temperature compensation traveling wave low noise amplifier and chip

Abstract

The invention discloses an automatic temperature compensation traveling wave low-noise amplifier and a chip, and belongs to the technical field of low-noise amplifiers. The amplifier comprises a plurality of high-frequency attenuation amplification modules which are connected in parallel, a grid electrode absorption load, a grid voltage temperature compensation bias module, a drain electrode absorption load and a drain voltage temperature compensation bias module. According to the low-noise amplifier, automatic temperature compensation at different temperatures is achieved, the change of the gain and the noise coefficient of the amplifier along with temperature fluctuation is reduced, and the stability of the amplifier is improved; according to the low-noise amplifier, an additional temperature compensation circuit module is not needed, the system integration degree is improved, the redundant design of equipment is reduced, and therefore the reliability of the equipment is improved; according to the low-noise amplifier, the high-frequency attenuation module effectively reduces gain fluctuation, and the high-frequency stability of the circuit is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of low-noise amplifiers, and in particular relates to an automatic temperature-compensated traveling-wave low-noise amplifier and a chip. Background Art

[0002] Low-noise amplifiers (LNAs) are key components in receivers because their noise figure (NF), gain, and bandwidth directly impact system sensitivity, dynamic range, and data rate. In weapon systems and satellite communications, receivers must withstand severe temperature fluctuations. Therefore, the trade-off between bandwidth, noise, and temperature stability of LNAs is crucial in these systems.

[0003] The gain and noise figure of existing LNAs can vary significantly with temperature fluctuations. For example, for every 10°C increase in temperature, the transistor threshold voltage can cause a 1-2dB drop in gain. Temperature compensation techniques offset the temperature dependence of device parameters by dynamically adjusting the bias voltage or current. However, existing LNA temperature compensation techniques typically involve adding an external temperature control module, which increases system redundancy and reduces overall system reliability. Summary of the Invention

[0004] The purpose of the present invention is to overcome the above-mentioned defects of the prior art and provide an automatic temperature compensation traveling wave low noise amplifier and a chip.

[0005] The technical problem proposed by the present invention is solved as follows:

[0006] An automatic temperature-compensated traveling-wave low-noise amplifier comprises a plurality of high-frequency attenuation amplification modules, a gate absorption load, a gate voltage temperature compensation bias module, a drain absorption load and a drain voltage temperature compensation bias module;

[0007] Several high-frequency attenuation and amplification modules are connected in parallel. Each high-frequency attenuation and amplification module is implemented in the form of a first transistor Q1 and a second transistor Q2 connected in series. The signal input from the gate of the first transistor Q1 is amplified and attenuated at high frequency, and the signal is output through the drain of the second transistor Q2.

[0008] A gate absorption load connected to the gate of the first transistor Q1 in each high-frequency attenuation amplifier module, serving as an absorption load of the gate of the first transistor Q1;

[0009] A gate voltage temperature compensation bias module is used to provide a gate voltage to the gate of the first transistor Q1 in each high-frequency attenuation amplifier module through a gate absorption load to achieve gate voltage temperature compensation;

[0010] A drain absorption load connected to the drain of the second transistor Q2 in each high-frequency attenuation amplifier module, serving as an absorption load for the drain of the second transistor Q2;

[0011] The drain voltage temperature compensation bias module is used to provide a gate voltage for the second transistor Q2 in each high-frequency attenuation amplifier module, and is also used to provide a drain voltage to the drain of the second transistor Q2 through a drain absorption load to achieve drain voltage temperature compensation.

[0012] Furthermore, the signal to be amplified is input from the signal input terminal RFin, filtered through the DC blocking capacitor Cin, and then input to the gate of the first transistor Q1 in each high-frequency attenuation amplification module.

[0013] Furthermore, the high-frequency attenuation amplification module includes a first transistor Q1, a second transistor Q2, a capacitor Cgf, a first diode D1, a second resistor R2, a third resistor R3, a fourth resistor R4 and a fifth resistor R5; the gate of the first transistor Q1 serves as the second input terminal IN2, the source is grounded, and the drain is connected to the source of the second transistor Q2; the gate of the second transistor Q2 is connected to one end of the fourth resistor R4, the drain is grounded through the fifth resistor R5 and the reverse first diode D1 connected in series, and the drain serves as the output terminal OUT; the other end of the fourth resistor R4 is grounded through the capacitor Cgf, and is also connected in series with the third resistor R3 and the second resistor R2 in sequence, and the other end of the second resistor R2 serves as the first input terminal IN1; the first input terminal IN1 is connected to the leakage voltage temperature compensation bias module, the second input terminal IN2 is connected to the gate absorption load, and the output terminal OUT is connected to the drain absorption load.

[0014] Furthermore, the output terminal OUT of the high-frequency attenuation amplification module is connected to one end of the capacitor Cout, and the other end of the capacitor Cout serves as the amplified signal output terminal RFout of the low-noise amplifier.

[0015] Furthermore, the gate absorption load includes an eleventh resistor R11, a twelfth resistor R12, a first load capacitor CT1 and a second load capacitor CT2; one end of the eleventh resistor R11 is connected to the gate of the first transistor Q1 in each high-frequency attenuation amplification module, and the other end is respectively connected to one end of the twelfth resistor R12 and one end of the first load capacitor CT1; the other end of the first load capacitor CT1 is grounded; the other end of the twelfth resistor R12 is connected to one end of the second load capacitor CT2 and the gate voltage temperature compensation bias module, and the other end of the second load capacitor CT2 is grounded.

[0016] Furthermore, the gate voltage temperature compensation bias module includes a voltage source VG, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10 and a second diode D2; one end of the seventh resistor R7 is connected to the other end of the twelfth resistor R12 in the gate absorption load, and the other end is grounded; the voltage source VG is connected to one end of the seventh resistor R7 through the eighth resistor R8 and the ninth resistor R9 connected in series; the positive electrode of the second diode D2 is grounded, and the negative electrode is connected between the eighth resistor R8 and the ninth resistor R9 through the tenth resistor R10.

[0017] Furthermore, the drain absorption load includes a sixth resistor R6 and a capacitor Cgb; one end of the sixth resistor R6 is connected to the output end OUT of each high-frequency attenuation amplification module; the other end of the sixth resistor R6 is grounded through the capacitor Cgb and is also connected to the leakage voltage temperature compensation bias module.

[0018] Furthermore, the leakage voltage temperature compensation bias module includes a first resistor R1, four third diodes D3 and a thirteenth resistor R13; the voltage source VD is respectively connected to the other end of the sixth resistor R6 in the drain absorption load and one end of the thirteenth resistor R13; the other end of the thirteenth resistor R13 is connected to one end of the first resistor R1 through four third diodes D3 connected in series in the forward direction, and the other end of the first resistor R1 is grounded; one end of the first resistor R1 is also connected to the first input terminal IN1 of each high-frequency amplification module.

[0019] Furthermore, the first transistor Q1 and the second transistor Q2 are depletion-type field-effect transistors.

[0020] An automatic temperature compensation traveling wave low noise amplifier chip is provided, on which the automatic temperature compensation traveling wave low noise amplifier is integrated.

[0021] The beneficial effects of the present invention are:

[0022] The low-noise amplifier of the present invention realizes automatic temperature compensation at different temperatures by providing a drain voltage temperature compensation bias module, a drain absorption load, a gate voltage temperature compensation bias module, and a gate absorption load, thereby reducing the change of the amplifier's gain and noise figure with temperature fluctuations and improving the stability of the amplifier.

[0023] The low-noise amplifier of the present invention does not require an additional temperature compensation circuit module, thereby improving system integration, reducing device redundancy design, and thus improving device reliability;

[0024] The high-frequency attenuation module in the low-noise amplifier of the present invention effectively reduces gain fluctuation and improves the high-frequency stability of the circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1This is a schematic diagram of the module composition of the automatic temperature compensation traveling wave low noise amplifier of the present invention;

[0026] Figure 2 Schematic diagram of the circuit implementation of the automatic temperature compensation traveling wave low noise amplifier of the present invention;

[0027] Figure 3 This is a schematic diagram of the circuit implementation of the high-frequency attenuation and amplification module in the low-noise amplifier of the present invention;

[0028] Figure 4 Schematic diagrams showing how the gain characteristics of the first transistor Q1 and the second transistor Q2 in the high-frequency attenuation amplifier module described in the embodiment vary with temperature and gate voltage, wherein (a) shows how the gain of the second transistor Q2 varies with gate voltage Vg1 at different temperatures, and (b) shows how the gain of the first transistor Q1 varies with gate voltage Vg2 at different temperatures;

[0029] Figure 5 Schematic diagram of simulation and measured results of whether the amplifier described in the embodiment integrates an automatic temperature compensation module or not, wherein (a) is a comparison diagram of simulation results with and without an integrated automatic temperature compensation module, and (b) is a comparison diagram of simulation and measured values of the amplifier integrated automatic temperature compensation module. DETAILED DESCRIPTION

[0030] The present invention will be further described below with reference to the accompanying drawings and examples.

[0031] This embodiment provides an automatic temperature compensation traveling wave low noise amplifier, and its module composition diagram is as follows: Figure 1 As shown, the circuit implementation diagram is as follows Figure 2 As shown, it includes several high-frequency attenuation amplification modules, gate absorption loads, gate voltage temperature compensation bias modules, drain absorption loads and drain voltage temperature compensation bias modules.

[0032] Several high-frequency attenuation and amplification modules are connected in parallel. Each high-frequency attenuation and amplification module is implemented in the form of a first transistor Q1 and a second transistor Q2 connected in series. The signal input from the gate of the first transistor Q1 is amplified and attenuated at high frequency, and the signal is output through the drain of the second transistor Q2. The number of high-frequency attenuation and amplification modules is at least one, and in this embodiment, there are seven.

[0033] The gate absorbing load is connected to the gate of the first transistor Q1 in each high-frequency attenuation amplification module and serves as an absorbing load of the gate of the first transistor Q1.

[0034] The gate voltage temperature compensation bias module is used to provide a gate voltage to the gate of the first transistor Q1 in each high-frequency attenuation amplifier module through a gate absorption load to achieve gate voltage temperature compensation.

[0035] The drain absorption load is connected to the drain of the second transistor Q2 in each high-frequency attenuation amplifier module and serves as an absorption load of the drain of the second transistor Q2.

[0036] The drain voltage temperature compensation bias module is used to provide a gate voltage for the second transistor Q2 in each high-frequency attenuation amplifier module, and is also used to provide a drain voltage to the drain of the second transistor Q2 through a drain absorption load to achieve drain voltage temperature compensation.

[0037] like Figure 2 As shown, the signal to be amplified is input from the signal input terminal RFin, and is input to the gate of the first transistor Q1 in each high-frequency attenuation amplification module after filtering and blocking the DC capacitor Cin.

[0038] like Figure 3 As shown, the high-frequency attenuation amplifier module includes a first transistor Q1, a second transistor Q2, a capacitor Cgf, a first diode D1, a second resistor R2, a third resistor R3, a fourth resistor R4, and a fifth resistor R5; the gate of the first transistor Q1 serves as the second input terminal IN2, the source is grounded, and the drain is connected to the source of the second transistor Q2; the gate of the second transistor Q2 is connected to one end of the fourth resistor R4, the drain is grounded through the fifth resistor R5 and the reverse first diode D1 connected in series, and the drain serves as the output terminal OUT; the other end of the fourth resistor R4 is grounded through the capacitor Cgf, and is also connected in series with the third resistor R3 and the second resistor R2 in sequence, and the other end of the second resistor R2 serves as the first input terminal IN1; the first input terminal IN1 is connected to the leakage voltage temperature compensation bias module, the second input terminal IN2 is connected to the gate absorption load, and the output terminal OUT is connected to the drain absorption load. Among them, the first transistor Q1 and the second transistor Q2 form a common gate and common source amplifier structure to achieve signal amplification, and the fifth resistor R5 and the first diode D1 are used to attenuate the signal at high frequency, thereby increasing the high frequency attenuation and improving the high frequency stability of the circuit.

[0039] like Figure 2 As shown, the output terminal OUT of the high-frequency attenuation amplification module is connected to one end of the capacitor Cout, and the other end of the capacitor Cout serves as the amplified signal output terminal RFout of the low-noise amplifier.

[0040] like Figure 2As shown, the gate absorption load includes an eleventh resistor R11, a twelfth resistor R12, a first load capacitor CT1, and a second load capacitor CT2. One end of the eleventh resistor R11 is connected to the gate of the first transistor Q1 in each high-frequency attenuation amplification module, and the other end is respectively connected to one end of the twelfth resistor R12 and one end of the first load capacitor CT1. The other end of the first load capacitor CT1 is grounded. The other end of the twelfth resistor R12 is connected to one end of the second load capacitor CT2 and the gate voltage temperature compensation bias module, and the other end of the second load capacitor CT2 is grounded. The gate absorption load can improve the low-frequency stability of the gate of the first diode Q1 and reduce gain flatness.

[0041] like Figure 2 As shown, the gate voltage temperature compensation bias module includes a voltage source VG, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, and a second diode D2. One end of the seventh resistor R7 is connected to the other end of the twelfth resistor R12 in the gate absorption load, and the other end is grounded. The voltage source VG is connected to one end of the seventh resistor R7 through the eighth resistor R8 and the ninth resistor R9 connected in series. The anode of the second diode D2 is grounded, and the cathode is connected between the eighth resistor R8 and the ninth resistor R9 through the tenth resistor R10. After voltage division by the eighth resistor R8, the tenth resistor R10, and the second diode D2, the voltage source VG provides a gate voltage Vg2 for the first transistor Q1.

[0042] like Figure 2 As shown, the drain absorption load includes a sixth resistor R6 and a capacitor Cgb. One end of the sixth resistor R6 is connected to the output terminal OUT of each high-frequency attenuation amplifier module. The other end of the sixth resistor R6 is grounded via the capacitor Cgb and is also connected to the voltage source VD of the drain voltage temperature compensation bias module. The drain absorption load can improve the low-frequency stability of the second transistor Q2 and reduce gain flatness.

[0043] like Figure 2 As shown, the leakage voltage temperature compensation bias module includes a first resistor R1, four third diodes D3, and a thirteenth resistor R13. A voltage source VD is connected to the other end of the sixth resistor R6 in the drain absorption load and one end of the thirteenth resistor R13 respectively. The other end of the thirteenth resistor R13 is connected to one end of the first resistor R1 via four third diodes D3 connected in series in the forward direction. The other end of the first resistor R1 is grounded. One end of the first resistor R1 is also connected to the first input terminal IN1 of each high-frequency amplification module. The leakage voltage temperature compensation bias module provides a gate voltage Vg1 for the second transistor Q2 through the voltage division of the series-connected R13, the third diode D3, and the resistor R1, and provides a drain voltage Vdd for the second transistor Q2 through the load R6.

[0044] In this embodiment, the first transistor Q1 and the second transistor Q2 are depletion-type field-effect transistors, but other types of transistors, such as triodes, may be used to implement the functions of the present invention. Without departing from the concept of the present invention, several variations and improvements (such as using GaN technology) may be made, all of which fall within the scope of protection of the present invention.

[0045] This embodiment further provides an automatic temperature compensation traveling wave low noise amplifier chip, on which the above-mentioned automatic temperature compensation traveling wave low noise amplifier is integrated.

[0046] When the low-noise amplifier circuit described in this embodiment is operating, the voltage source VD of the leakage voltage temperature compensation bias module serves as the amplifier's operating leakage voltage (e.g., +7.5V). Vg1 is obtained by dividing the voltages of resistor R13, the third diode D3, and resistor R1. Therefore, Vg1 ≈ R1*(VD-λ·Vj) / (R13+R1), where Vj is the barrier voltage drop of the third diode D3, and λ is the number of third diodes. When the operating temperature changes, the transistor gain will change with the temperature. At this time, the gate voltage Vg1 will also change, thereby automatically reducing transistor gain fluctuations.

[0047] The gate voltage Vg1 fluctuation range ΔVg1 can be calculated using the formula:

[0048]

[0049] Where T and n are the temperature and ideality factor of the third diode, respectively. h and T l are the upper and lower limits of temperature, respectively. A* is the Richardson-Dashman constant. The A* of n-type GaAs is 8.1×104A / m 2 ·K 2 , R1 is the resistance of the first resistor in the leakage voltage temperature compensation bias module, S is the junction area of the diode, q is the charge of a single proton or electron, which is 1.602176634×10 -19 C, k is the Boltzmann constant, which is 1.380649×10 -23 J / K,φ B is the Schottky barrier voltage, which is approximately 0.7 V in GaAs PHEMT. The working principle of the leakage voltage temperature compensation bias module is similar.

[0050] The low noise amplifier of this embodiment is simulated and verified, wherein the gain characteristics of the first transistor Q1 and the second transistor Q2 vary with temperature and gate voltage as shown in FIG. Figure 4As shown in the figure, (a) is a schematic diagram showing how the gain of the second transistor Q2 changes with the gate voltage Vg1 at different temperatures, and (b) is a schematic diagram showing how the gain of the first transistor Q1 changes with the gate voltage Vg2 at different temperatures. The simulation and measured results of whether the amplifier integrates an automatic temperature compensation module (including a gate voltage temperature compensation bias module, a drain voltage temperature compensation bias module, a gate absorption load, and a drain absorption load) are shown in the figure. Figure 5 As shown, (a) is a comparison diagram of simulation results with and without an integrated automatic temperature compensation module, and (b) is a comparison diagram of simulation and measured values of the amplifier with an integrated automatic temperature compensation module.

[0051] It can be seen that the low-noise amplifier described in this embodiment can ensure that gain fluctuation is reduced to within ±0.7dB over a wide temperature range (-55°C to +85°C). Experimental simulations have also shown that noise figure fluctuation can be reduced to within ±0.4dB, ensuring the receiver's system sensitivity, dynamic range, and data rate. This improves system integration, reduces device redundancy, and thus enhances device reliability.

[0052] It should be noted that, in this document, relational terms such as first and second, etc. are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations.

[0053] It should be understood that the above embodiments and descriptions only describe the principles, main features and advantages of the present invention. Without departing from the spirit and scope of the present invention, the present invention may be subject to various changes and improvements, and these changes and improvements all fall within the scope of protection of the present invention.

Claims

1. An automatic temperature compensated traveling wave low noise amplifier, characterized in that: It includes several high-frequency attenuation amplification modules, gate absorption load, gate voltage temperature compensation bias module, drain absorption load and drain voltage temperature compensation bias module; Several high-frequency attenuation and amplification modules are connected in parallel. Each high-frequency attenuation and amplification module is implemented in the form of a first transistor Q1 and a second transistor Q2 connected in series. The signal input from the gate of the first transistor Q1 is amplified and attenuated at high frequency, and the signal is output through the drain of the second transistor Q2. A gate absorption load connected to the gate of the first transistor Q1 in each high-frequency attenuation amplifier module, serving as an absorption load of the gate of the first transistor Q1; A gate voltage temperature compensation bias module is used to provide a gate voltage to the gate of the first transistor Q1 in each high-frequency attenuation amplifier module through a gate absorption load to achieve gate voltage temperature compensation; A drain absorption load connected to the drain of the second transistor Q2 in each high-frequency attenuation amplifier module, serving as an absorption load for the drain of the second transistor Q2; The drain voltage temperature compensation bias module is used to provide a gate voltage for the second transistor Q2 in each high-frequency attenuation amplifier module, and is also used to provide a drain voltage to the drain of the second transistor Q2 through a drain absorption load to achieve drain voltage temperature compensation.

2. The automatic temperature compensation traveling wave low noise amplifier according to claim 1, characterized in that: The signal to be amplified is input from the signal input terminal RFin, and is input to the gate of the first transistor Q1 in each high-frequency attenuation amplification module after filtering through the DC blocking capacitor Cin.

3. The automatic temperature compensation traveling wave low noise amplifier according to claim 1, characterized in that: The high-frequency attenuation amplification module includes a first transistor Q1, a second transistor Q2, a capacitor Cgf, a first diode D1, a second resistor R2, a third resistor R3, a fourth resistor R4 and a fifth resistor R5; the gate of the first transistor Q1 serves as a second input terminal IN2, the source is grounded, and the drain is connected to the source of the second transistor Q2; the gate of the second transistor Q2 is connected to one end of the fourth resistor R4, the drain is grounded through the fifth resistor R5 and the reverse first diode D1 connected in series, and the drain serves as the output terminal OUT; the other end of the fourth resistor R4 is grounded through the capacitor Cgf, and is also connected in series with the third resistor R3 and the second resistor R2 in sequence, and the other end of the second resistor R2 serves as the first input terminal IN1; the first input terminal IN1 is connected to the leakage voltage temperature compensation bias module, the second input terminal IN2 is connected to the gate absorption load, and the output terminal OUT is connected to the drain absorption load.

4. The automatic temperature compensation traveling wave low noise amplifier according to claim 3, characterized in that: The output terminal OUT of the high-frequency attenuation amplification module is connected to one end of the capacitor Cout, and the other end of the capacitor Cout serves as the amplified signal output terminal RFout of the low-noise amplifier.

5. The automatic temperature compensation traveling wave low noise amplifier according to claim 1, characterized in that: The gate absorption load includes an eleventh resistor R11, a twelfth resistor R12, a first load capacitor CT1 and a second load capacitor CT2; one end of the eleventh resistor R11 is connected to the gate of the first transistor Q1 in each high-frequency attenuation amplification module, and the other end is respectively connected to one end of the twelfth resistor R12 and one end of the first load capacitor CT1; the other end of the first load capacitor CT1 is grounded; the other end of the twelfth resistor R12 is connected to one end of the second load capacitor CT2 and the gate voltage temperature compensation bias module, and the other end of the second load capacitor CT2 is grounded.

6. The automatic temperature compensation traveling wave low noise amplifier according to claim 1, characterized in that: The gate voltage temperature compensation bias module includes a voltage source VG, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, and a second diode D2; one end of the seventh resistor R7 is connected to the other end of the twelfth resistor R12 in the gate absorption load, and the other end is grounded; the voltage source VG is connected to one end of the seventh resistor R7 through the eighth resistor R8 and the ninth resistor R9 connected in series; the positive electrode of the second diode D2 is grounded, and the negative electrode is connected between the eighth resistor R8 and the ninth resistor R9 through the tenth resistor R10.

7. The automatic temperature compensation traveling wave low noise amplifier according to claim 1, characterized in that: The drain absorption load includes a sixth resistor R6 and a capacitor Cgb; one end of the sixth resistor R6 is connected to the output end OUT of each high-frequency attenuation amplification module; the other end of the sixth resistor R6 is grounded through the capacitor Cgb and is also connected to the leakage voltage temperature compensation bias module.

8. The automatic temperature compensation traveling wave low noise amplifier according to claim 1, characterized in that: The leakage voltage temperature compensation bias module includes a first resistor R1, four third diodes D3 and a thirteenth resistor R13; a voltage source VD is respectively connected to the other end of the sixth resistor R6 in the drain absorption load and one end of the thirteenth resistor R13; the other end of the thirteenth resistor R13 is connected to one end of the first resistor R1 through four third diodes D3 connected in series in the forward direction, and the other end of the first resistor R1 is grounded; one end of the first resistor R1 is also connected to the first input terminal IN1 of each high-frequency amplification module.

9. The automatic temperature compensation traveling wave low noise amplifier according to claim 1, characterized in that: The first transistor Q1 and the second transistor Q2 are depletion-type field-effect transistors.

10. An automatic temperature compensation traveling wave low noise amplifier chip, characterized in that: The chip is integrated with the automatic temperature compensation traveling wave low noise amplifier according to claim 1.

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