Transformer and manufacturing method thereof

Abstract

The invention discloses a transformer and a manufacturing method thereof. A transformer according to one aspect of the present invention comprises: a cover body having a cover body space formed therein; a first winding part which is electrically connected to an external power supply or load and is accommodated in the cover body space; a shield portion accommodated in the cover space so as to be spaced apart from the first winding portion and electrically connected to ground; the semi-conductive layer is formed to partially cover and surround the surface of the cover body space; the semi-conductive layer is formed to have an area smaller than a total area of the surfaces surrounding the cover space by a predetermined ratio. The shielding part is located at a position in contact with the semi-conductive layer in the cover body space; the semi-conductive layers respectively formed on the plurality of surfaces surrounding the cover space may be continuous with each other and electrically contacted with the shield portion.

Description

Technical Field

[0001] The present invention relates to a transformer and a manufacturing method thereof, and more particularly to a transformer capable of alleviating electric field concentration and partial discharge and a manufacturing method thereof. Background Art

[0002] A transformer is a device that converts high or low voltage current into low or high voltage current. Typically, transformers are used to convert AC voltage.

[0003] Transformers can be classified into low-frequency transformers, medium-frequency transformers, and high-frequency transformers based on the frequency of the current they carry. In particular, high-frequency transformers can be defined as transformers whose operating frequency exceeds the intermediate frequency (10kHz).

[0004] High-frequency transformers can be installed in various types of devices that require high-frequency power, such as high-frequency switching power supply devices, high-frequency inverter power supply devices, and high-frequency inverter welding machines.

[0005] At this time, as the capacity of the high-frequency transformer increases, high-voltage electricity may pass through the high-frequency transformer, thereby posing a risk that the components of the high-frequency transformer may be damaged due to the energization.

[0006] Therefore, in order to increase the capacity of a high-frequency transformer, it is necessary to consider both enhancing electrical insulation and alleviating electric fields.

[0007] If the structure for enhancing electrical insulation and mitigating the electric field is too large, the overall size of the high-frequency transformer increases, making it difficult to use in the various devices mentioned above. Furthermore, if the structure is too expensive, the manufacturing cost of the high-frequency transformer increases, making it difficult to maintain market competitiveness.

[0008] Korean Patent No. 10-2460560 discloses a high-voltage, high-frequency, insulated transformer that utilizes electric field balancing shielding. Specifically, the invention discloses a high-voltage, high-frequency, insulated transformer that includes an electric field balancing device between a high-voltage winding wound around a core and the core, thereby preventing localized partial discharge and optimizing insulation distance. The electric field balancing device is sheet-shaped and is positioned to cover the portion of the core opposite the high-voltage winding.

[0009] However, the electric field equalization shield disclosed in the prior art document is a structure bonded to the core as a separate component, and the prior art document does not disclose a means for bonding the electric field equalization shield to the core or a solution for maintaining the position of the bonded electric field equalization shield.

[0010] Therefore, the existing literature proposes a solution for achieving electric field balance between the core and the high-voltage winding, but does not provide a solution for maintaining the electric field balance shielding function during actual manufacturing and for easily integrating it into a high-frequency transformer.

[0011] Korean Patent No. 10-1732116 discloses a high-voltage, high-frequency, high-power transformer. Specifically, the transformer has a structure that achieves electrical insulation and cooling by mounting the primary winding and magnetic core assembly inside a hollow tube that forms part of the insulation, with the secondary winding positioned above the hollow tube.

[0012] However, the high-voltage, high-frequency, high-power transformer disclosed in the prior art is constructed such that the insulation portion, along with the primary winding, secondary winding, and magnetic core assembly, forms the overall shape of the high-voltage, high-frequency, high-power transformer. In other words, the insulation portion proposed in the prior art inevitably increases the overall volume of the transformer.

[0013] Korean Patent Publication No. 10-2022-0144955 discloses a hydraulic high-frequency transformer and a method for manufacturing the same. Specifically, the invention discloses a hydraulic high-frequency transformer and a method for manufacturing the same, wherein the transformer body and bushing are combined with a housing and then filled with insulating oil to achieve insulation.

[0014] However, the hydraulic high-frequency transformer and its manufacturing method disclosed in the prior art document only discloses a method for connecting the transformer body, bushing, etc., which is based on the premise that the transformer body and bushing are already manufactured, to the housing. In other words, the prior art document does not propose adding a structure to maintain insulation during the manufacturing process of the transformer body, bushing, etc.

[0015] Korean Patent No. 10-2460560 (October 25, 2022)

[0016] Korean Patent No. 10-1732116 (April 25, 2017)

[0017] Korean Patent Publication No. 10-2022-0144955 (October 28, 2022) Summary of the Invention

[0018] Problems to be solved by the invention

[0019] The present invention is intended to solve the above-mentioned problems, and an object of the present invention is to provide a transformer having a structure capable of alleviating electric field concentration and partial discharge, and a method for manufacturing the transformer.

[0020] Another object of the present invention is to provide a transformer having a structure in which components for alleviating electric field concentration and partial discharge are not damaged by external environmental influences, and a method for manufacturing the transformer.

[0021] Another object of the present invention is to provide a transformer having a structure capable of alleviating electric field concentration and partial discharge in various forms, and a method for manufacturing the transformer.

[0022] Another object of the present invention is to provide a transformer having a structure capable of preventing electric field destruction or electric field concentration caused by a member for alleviating electric field concentration and partial discharge, and a method for manufacturing the transformer.

[0023] Another object of the present invention is to provide a transformer having a structure capable of ensuring design freedom and a method for manufacturing the transformer.

[0024] The problems of the present invention are not limited to the problems mentioned above, and those skilled in the art can clearly understand other problems not mentioned from the following description.

[0025] Technical solutions to the problem

[0026] According to one aspect of the present invention, a transformer is provided, comprising: a cover body, having a cover body space formed therein; a first winding portion, electrically connectable to an external power supply or load, and accommodated in the cover body space; a shielding portion, accommodated in the cover body space to be separated from the first winding portion and electrically connectable to ground; and a semiconductive layer, formed to partially cover a surface surrounding the cover body space; the semiconductive layer is formed to have an area that is smaller than a total area of the surface surrounding the cover body space by a predetermined ratio; the shielding portion is located in a position in the cover body space in contact with the semiconductive layer; the semiconductive layers respectively formed on a plurality of the surfaces surrounding the cover body space are continuous with each other and electrically contactable with the shielding portion.

[0027] At this time, a transformer can be provided, which includes a bushing, which is combined with the cover body, and a bushing space connected to the cover body space is formed inside the bushing; the shielding part includes: a bushing shielding component, located in the bushing space, and electrically connected to the ground; and a cover body shielding component, combined with the surface surrounding the cover body space, and electrically connected to the bushing shielding component.

[0028] In addition, a transformer can be provided, wherein the semiconductive layer is further formed on the inner surface of the bushing surrounding the bushing space, and is continuous with the semiconductive layer formed on the surface surrounding the cover space; the bushing shielding member extends along a direction in which the bushing extends, and one end portion thereof in the extension direction is overlapped with the inner surface of the bushing, and the other end portion thereof in the extension direction is separated from the semiconductive layer.

[0029] At this time, a transformer can be provided, wherein the semiconductive layer is further formed on the inner surface of the bushing surrounding the bushing space, and is continuous with the semiconductive layer formed on the surface surrounding the cover space; the bushing shielding member extends in a direction in which the bushing extends, and a portion between each end portion in the extension direction is electrically connected to the ground; the semiconductive layer is formed so that its boundary is located between an end portion of the bushing shielding member opposite to the cover and the portion.

[0030] In addition, a transformer can be provided, wherein the cover body includes: a first cover body inner surface, supporting the first winding part; a second cover body inner surface and a third cover body inner surface, each of which is continuous with the first cover body inner surface and extends in one direction, and the second cover body inner surface and the third cover body inner surface are arranged facing each other with the cover body space between them; and a fourth cover body inner surface and a fifth cover body inner surface, each of which is continuous with the first cover body inner surface to the third cover body inner surface and extends in another direction, and the fourth cover body inner surface and the fifth cover body inner surface are arranged facing each other with the cover body space between them; the semiconductive layer is formed to cover at least a portion of each of the first cover body inner surface to the fifth cover body inner surface.

[0031] At this time, a transformer can be provided, wherein the area of the semiconductive layer formed on the inner surface of the first cover body is formed to be less than the area of the inner surface of the first cover body; the area of the semiconductive layer formed on the inner surface of the second cover body to the inner surface of the fifth cover body is formed to be smaller than the sum of the areas of the inner surface of the second cover body to the inner surface of the fifth cover body.

[0032] In addition, a transformer can be provided, wherein the cover shielding member extends along the inner surface of the second cover body to the inner surface of the fifth cover body to surround the cover body space, and is separated from the end opposite to the inner surface of the first cover body in the height direction of the end from the second cover body to the inner surface of the fifth cover body by a specified distance; the semiconductive layer is formed from the cover shielding member to the inner surface of the first cover body.

[0033] At this time, a transformer may be provided, wherein the total area of the semiconductive layer formed on the inner surface of the first cover to the inner surface of the fifth cover is less than 90% of the total area of the inner surface of the first cover to the inner surface of the fifth cover.

[0034] In addition, a transformer can be provided, wherein the cover body includes: a winding shaft support portion, which extends from the inner surface of the first cover body in the height direction and is separated from the inner surfaces of the second cover body to the fifth cover body; and an iron core accommodating portion, which is formed through the interior of the winding shaft support portion and accommodates the iron core portion, and the connection between the iron core accommodating portion and the cover body space is cut off; the first winding portion includes: a first winding shaft, a first winding shaft space for the winding shaft support portion to pass through and be combined is formed inside the first winding shaft; and a first coil, which is wound on the first winding shaft and can be electrically connected to an external power supply or load.

[0035] At this time, a transformer can be provided, wherein the semiconductive layer is formed to cover the surface of the winding shaft support part facing the cover body space; the area of the semiconductive layer formed on the surface of the winding shaft support part is formed to be less than the area of the surface of the winding shaft support part; and the cover body shielding component is arranged on the surface of the winding shaft support part to contact the semiconductive layer.

[0036] In addition, a transformer can be provided, wherein the cover shielding member extends along the surface of the winding shaft support portion to surround the core accommodating portion, and is separated from a specified distance from an end portion in the height direction of the surface of the winding shaft support portion that is opposite to the inner surface of the first cover body; the semi-conductive layer is formed on the surface of the winding shaft support portion from the cover shielding member to the inner surface of the first cover body.

[0037] In addition, according to one aspect of the present invention, a transformer is provided, which includes: a cover body, having a cover body space formed therein; a bushing, which is combined with the cover body, and a bushing space connected to the cover body space is formed inside the bushing; a shielding portion, which is accommodated in the bushing space and is electrically connected to the ground; and a semiconductive layer, which is formed to cover at least a portion of each of a surface surrounding the cover body space and a surface surrounding the bushing space; the semiconductive layer is formed to cover the entire surface surrounding the cover body space and covers a portion of the surface surrounding the bushing space that is in contact with the shielding portion so as to be in contact with the shielding portion.

[0038] In this case, a transformer may be provided, wherein a portion of the semiconductive layer covering the surface surrounding the bushing space and a portion covering the surface surrounding the cover space are continuous with each other.

[0039] In addition, a transformer can be provided, wherein the cover body includes a winding shaft support portion, the winding shaft support portion is located in the cover body space, and extends along the height direction from a surface of the cover body that surrounds the cover body space on one side in the height direction; the semi-conductive layer is formed to cover the entire surface of the winding shaft support portion facing the cover body space.

[0040] Effects of the Invention

[0041] According to the above configuration, the transformer and the manufacturing method thereof according to the embodiment of the present invention can alleviate electric field concentration and partial discharge.

[0042] The transformer is provided with a first winding portion electrically connected to an external power source or load. The first winding portion is housed within a housing space formed within a housing that forms the outer shape of the transformer. An iron core portion is connected through the housing and the first winding portion housed within the housing, generating an induced current, thereby enabling a voltage transformation process.

[0043] A shielding portion is provided within the housing space. The shielding portion includes a sleeve shielding member provided on the sleeve coupled to the housing, and a housing shielding member provided within the housing space and electrically connected to the sleeve shielding member. The sleeve shielding member and the housing shielding member can be formed of a conductive material, such as aluminum.

[0044] A semiconductive layer is formed on a surface of the cover surrounding the cover space or a surface of the sleeve surrounding the sleeve space formed inside the sleeve. The semiconductive layer is made of a semiconductive material and contacts and is electrically connected to the shield.

[0045] The cover shielding member is arranged to be spaced apart from the first winding portion and surround the first winding portion from the outside. A portion of the semiconductive layer supports the first winding portion and another portion is spaced apart from the first winding portion and surrounds the first winding portion from the outside.

[0046] This makes it possible to sufficiently alleviate the electric field generated in the first winding portion, ensure sufficient insulation performance, and prevent partial discharge.

[0047] In addition, according to the above-mentioned configuration, in the transformer and the manufacturing method thereof according to the embodiment of the present invention, the components for alleviating electric field concentration and partial discharge can be prevented from being damaged by the external environment.

[0048] As described above, the first winding portion is housed in the housing space and is not exposed to the outside. Similarly, the shield portion and the semiconductive layer provided to mitigate the electric field generated in the first winding portion are also housed in the housing space and are not exposed to the outside.

[0049] In one embodiment, the cover may include a first cover and a second cover, wherein the cover space is partially formed inside the first cover and the second cover respectively, and when the first cover and the second cover are combined, the cover space is sealed, thereby cutting off communication with the outside.

[0050] Therefore, the shielding portion and the semiconductive layer accommodated in the housing space can mitigate the electric field generated by the first winding portion without being affected by the external environment, thereby preventing damage to the shielding portion and the semiconductive layer caused by the external environment.

[0051] In addition, according to the above-mentioned configuration, the transformer and the manufacturing method thereof according to the embodiment of the present invention can alleviate electric field concentration and partial discharge in various forms.

[0052] The shielding portion includes a sleeve shielding member provided on the sleeve and a cover shielding member provided on the cover. The sleeve shielding member and the cover shielding member are electrically connected to an external ground.

[0053] The shielding portion is configured to at least partially contact the semiconductive layer. In one embodiment, the housing shielding member is configured to contact the semiconductive layer formed on the inner surface of the housing that encloses the housing space. Additionally, the sleeve shielding member is configured to contact the semiconductive layer formed on the inner surface of the sleeve that encloses the sleeve space.

[0054] That is, the electric field generated by the first winding portion can be mitigated by the shielding portion and the semiconductive layer.

[0055] Therefore, the generated electric field can be relieved in various forms, and the electric field is sufficiently relieved, making it possible to ensure sufficient insulation performance.

[0056] Furthermore, according to the above-described configuration, the transformer and the manufacturing method thereof according to the embodiment of the present invention can prevent electric field destruction or electric field concentration caused by the member for alleviating electric field concentration and partial discharge.

[0057] In one embodiment, the semiconductive layer may also be formed on the inner surface of the bushing body surrounding the bushing space accommodating the bushing shielding member. In this case, the semiconductive layer may be formed so as to overlap and contact a portion of the bushing shielding member and be spaced apart from and not contact another portion of the bushing shielding member.

[0058] Specifically, the bushing shielding member may extend along the extension direction of the bushing. The semiconductive layer may contact one end of each end of the bushing shielding member in the extension direction facing the cover body and be spaced apart from the other end on the opposite side of the cover body.

[0059] In particular, a portion of the bushing shielding member is electrically connected to an external ground. The semiconductive layer may be formed to be separated from the portion. In other words, a boundary formed by the semiconductive layer may be located between the portion and the one end portion.

[0060] Thus, the semiconductive layer is not directly electrically connected to the external ground, and thus electric field destruction and electric field concentration can be prevented.

[0061] Furthermore, according to the above-described configuration, the transformer and the manufacturing method thereof according to the embodiment of the present invention can ensure design freedom.

[0062] The semiconductive layer may be formed to have an area having a predetermined ratio relative to the total area of the inner surface of the cover surrounding the cover space. That is, the semiconductive layer may be formed partially on the inner surface of the cover. In one embodiment, the semiconductive layer may be formed to have an area less than 90% of the total area of the inner surface of the cover.

[0063] In one embodiment, a semiconductive layer may also be formed on the surface of the bobbin support portion supporting the first winding portion. The semiconductive layer may be formed on the surface of the bobbin support portion facing the housing space, having an area smaller than the area of the surface. In one embodiment, the semiconductive layer formed on the surface of the bobbin support portion may be formed to have an area smaller than the area of the surface of the bobbin support portion.

[0064] In either case, it is sufficient as long as the total area of the semiconductive layer is kept less than 90% of the total area of the inner surface of the cover and the surface of the bobbin support portion.

[0065] In the embodiment, the cover shielding member can be disposed not only on the inner surface of the cover but also on the surface of the bobbin support portion. The cover shielding members disposed on the inner surface of the cover and the surface of the bobbin support portion can be electrically connected to each other and can also be electrically connected to an external ground via the sleeve shielding member.

[0066] That is, the semiconductive layer and the cover shielding member can be formed in various forms according to the specifications of the transformer, etc. This can improve the degree of freedom in designing the transformer.

[0067] The effects of the present invention are not limited to the above-described effects, but should be understood to include all effects that can be inferred from the configuration of the invention described in the detailed description of the present invention or the claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0068] Figure 1 1 is a perspective view showing a transformer according to an embodiment of the present invention.

[0069] Figure 2 It shows Figure 1 Side view of the transformer.

[0070] Figure 3 It shows Figure 1 Exploded perspective view of the transformer.

[0071] Figure 4 It shows Figure 1 AA cutaway perspective view of the transformer.

[0072] Figure 5 and Figure 6 It shows the settings Figure 1 BB cutaway perspective view of the transformer bushing and cover.

[0073] Figure 7 It is shown in Figure 5 and Figure 6 A cross-sectional perspective view of an embodiment of a cover body provided with a semiconductive layer and a shielding ring.

[0074] Figure 8 It is shown in Figure 5 and Figure 6 A cross-sectional perspective view of another embodiment of a housing provided with a semiconductive layer and a shielding ring.

[0075] Figure 9 It is shown in Figure 5 and Figure 6 A cross-sectional perspective view of another embodiment of a housing provided with a semiconductive layer and a shielding ring.

[0076] Figure 10 is shown for support set in Figure 5 and Figure 6 A side sectional view of an example of a shield member coupling portion of a shield ring of a cover body.

[0077] Figure 11 and Figure 12 is shown for support set in Figure 5 and Figure 6 A sectional perspective view of another example of the shield member coupling portion of the shield ring of the cover.

[0078] Figure 13 is shown for support set in Figure 5 and Figure 6 A sectional perspective view of another embodiment of the shielding member coupling portion of the shielding ring of the cover body.

[0079] Figure 14 It shows Figure 13 An exploded perspective view of the coupling relationship between the shielding component coupling portion and the cover body of an embodiment.

[0080] Figure 15 It shows Figure 13 A side sectional view of the coupling relationship between the shielding member coupling portion and the cover body of an embodiment.

[0081] Figure 16 is a perspective view showing the internal structure of a transformer according to another embodiment of the present invention.

[0082] Figure 171 is a flowchart showing the flow of a method for manufacturing a transformer according to an embodiment of the present invention.

[0083] Figure 18 It shows Figure 17 Flowchart of the detailed process of step S100 in the transformer manufacturing method.

[0084] Figure 19 It shows Figure 18 FIG. 4 is an example diagram of the execution process of step S100.

[0085] Figure 20 It shows Figure 17 Flowchart of the detailed process of step S200 in the transformer manufacturing method.

[0086] Figure 21 It shows Figure 20 FIG. 4 is an example diagram of the execution process of step S200.

[0087] Figure 22 It shows Figure 17 Flowchart of the detailed process of step S300 in the transformer manufacturing method.

[0088] Figures 23 to 24 It shows Figure 22 FIG. 4 is an example diagram of the execution process of step S300.

[0089] Figure 25 It shows Figure 17 Flowchart of the detailed process of step S400 in the transformer manufacturing method.

[0090] Figure 26 It shows Figure 25 FIG. 4 is an example diagram of the execution process of step S400.

[0091] Figure 27 It shows Figure 17 Flowchart of the detailed process of step S500 in the transformer manufacturing method.

[0092] Figure 28 It shows Figure 27 FIG. 4 is an example diagram of the execution process of step S500. DETAILED DESCRIPTION

[0093] Below, embodiments of the present invention are described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement them. The present invention can be implemented in a variety of different forms and is not limited to the embodiments described herein. To clearly illustrate the present invention, parts not relevant to the description are omitted in the figures. Throughout the specification, the same or similar components are given the same reference numerals.

[0094] The terms and concepts used in this specification and claims should not be construed as limited to ordinary or dictionary meanings, but should be interpreted in a manner consistent with the meanings and concepts of the technical ideas of the present invention based on the principle that the inventor can define terms and concepts in order to best explain the present invention.

[0095] Therefore, the embodiments described in this specification and the structures shown in the drawings are equivalent to a preferred embodiment of the present invention, and do not represent the entire technical concept of the present invention. Therefore, the corresponding structures may have multiple equivalents and variations that can be replaced when the present invention is applied.

[0096] In the following description, in order to further clarify the features of the present invention, the description of some components may be omitted.

[0097] 1. Definition of terms

[0098] The term "communication" as used in the following description refers to one or more components being connected in a manner that allows fluid to flow freely between them. In one embodiment, the communication can be achieved by components such as pipes, tubes, and piping. In the following description, communication can be used to mean that one or more components are "fluidically connected" to each other.

[0099] As used in the following description, the term "energized" means that one or more components are connected to each other in a manner capable of transmitting current or electrical signals. In one embodiment, energization can be achieved through a wired method such as using a wire component or a wireless method such as Bluetooth, Wi-Fi, or RFID. In one embodiment, energization can also include the meaning of "communication."

[0100] The term "fluid" used in the following description refers to any substance that can flow under the action of an external force and can change shape, volume, etc. In one embodiment, the fluid can be a liquid such as water or a gas such as air.

[0101] The terms "upper side", "lower side", "left side", "right side", "front side" and "rear side" used in the following description can refer to Figure 1 The coordinate system shown in FIG.

[0102] 2. Description of the structure of the transformer 10 according to the embodiment of the present invention

[0103] Reference Figures 1 to 4 , showing a transformer 10 according to an embodiment of the present invention.

[0104] In the transformer 10 of the embodiment of the present invention, the cover 100 forming the outer shape thereof can be formed of an electrically insulating material. In addition, other components of the transformer 10 can be housed in the cover 100 and fixed by an electrically insulating material.

[0105] In addition, a semiconductive layer SC may be formed on the inner surface of the transformer 10 . The semiconductive layer SC, together with the shield 500 , can insulate the transformer 10 from the outside, thereby alleviating electric field concentration and partial discharge formed outside or inside the transformer 10 .

[0106] The transformer 10 is electrically connected to an external power source (not shown) or a load (not shown). The power transmitted from the external power source (not shown) can be transformed by the transformer 10 and transmitted to the load (not shown).

[0107] The transformer 10 can be configured to be electrically connected to an external power source (not shown) or a load (not shown) and can be configured in any form to transform the received power and retransmit it. In this case, the transformer 10 can be provided as a high-frequency transformer, a low-frequency transformer, or a medium-frequency transformer, depending on the frequency of the received power.

[0108] In the illustrated embodiment, the transformer 10 includes a housing 100 , a core portion 200 , a first winding portion 300 , a second winding portion 400 , a shielding portion 500 , a bushing 600 , and a coupling frame 700 .

[0109] In addition, refer to Figures 10 to 15 The transformer 10 further includes a shield member coupling portion 800. As will be described later, the shield member coupling portion 800 is configured to fix the cover shield member 520, which is one component of the shield portion 500, to the cover 100.

[0110] The housing 100 forms a portion of the outer shape of the transformer 10. A space is formed inside the housing 100 to accommodate other components of the transformer 10. In addition, other components of the transformer 10 may penetrate the housing 100 and be coupled to the housing 100.

[0111] The cover 100 may be formed of an electrically insulating material. In addition, the cover 100 may be manufactured using a mold. In the embodiment, the electrically insulating material is contained in the mold, thereby manufacturing the cover 100.

[0112] In one embodiment, the electrically insulating material may be formed of a synthetic resin material such as epoxy resin or a silicon material. In another embodiment, the electrically insulating material may be formed of mineral oil, alkylbenzene, polybutene, alkylated naphthalene, alkylated diphenyl ethane, silicone oil, a mixture of mineral oil and alkylbenzene, or a vegetable oil such as a natural ester, or an insulating oil mixed therewith.

[0113] Therefore, as will be described later, the material of the cover body 100 and the substance filled in the cover body space 110 may be formed of the same substance.

[0114] The cover 100 is coupled to the core 200. An opening (i.e., the core accommodating portion 150 described later) is formed through the cover 100, and the core 200 can be coupled to the opening. In this case, the opening can be physically separated from the interior space of the cover 100 and communication is cut off.

[0115] The cover 100 is coupled to the first winding portion 300. A bobbin support portion 140 surrounding the opening is formed inside the cover 100. The first winding portion 300 can be accommodated inside the cover 100 and coupled to the first winding portion 300 for support.

[0116] The housing 100 is coupled to the second winding portion 400. The second winding portion 400 is disposed at the height of the housing 100, i.e., at the upper and lower sides in the illustrated embodiment. The core 200 may penetrate the housing 100, the first winding portion 300, and the second winding portion 400, respectively, coupling them.

[0117] The housing 100 is combined with the shielding portion 500. The shielding portion 500 is provided inside the housing 100 to mitigate the generated electric field and prevent the electric field from concentrating on a specific area. Furthermore, the shielding portion 500 can also prevent the discharge of the energized power.

[0118] The housing 100 is coupled to a sleeve 600. The sleeve 600 supports and secures a conductive member (not labeled) housed within the housing 100, facilitating connection to an external power source (not shown) or load (not shown). In the illustrated embodiment, the sleeve 600 is coupled to the front side of the housing 100. The housing 100 and the sleeve 600 are in communication, allowing the conductive member (not labeled) to electrically connect to other components housed within the housing 100.

[0119] The cover body 100 is coupled to the coupling frame 700. The cover body 100 can be coupled to other external structures using the coupling frame 700. In the illustrated embodiment, the coupling frames 700 are coupled to the upper and lower sides of the cover body 100, respectively.

[0120] The housing 100 accommodates the shield member coupling portion 800. The shield portion 500 accommodated inside the housing 100 can be stably supported by the shield member coupling portion 800.

[0121] A semiconductive layer SC may be formed on the inner surface of the cover 100. The semiconductive layer SC may be located between the inner space of the cover 100 and the inner surface of the cover 100, and can alleviate the generated electric field to prevent electric field concentration and the resulting insulation breakdown.

[0122] The semiconductive layer SC can be formed of any material that can mitigate the electric field and form a uniform electric field. In one embodiment, the semiconductive layer SC can be formed of a semiconductive substance or a semiconductive thermosetting compound. In one embodiment, the semiconductive layer SC can be formed of a mixture of semiconductive polyethylene and conductive carbon black.

[0123] The semiconductive layer SC can be formed in various forms on the inner surface of the cover 100. In one embodiment, the semiconductive layer SC can be formed on the inner surface of the cover 100 by spraying. In this embodiment, no additional member is required for arranging and fixing the semiconductive layer SC, and the semiconductive layer SC can be formed only by spraying, thereby improving workability.

[0124] In one embodiment, the semiconductive layer SC may be applied to less than 90% of the area of the inner surface of the housing 100. Thus, 10% of the area of the inner surface of the housing 100 is not provided with the semiconductive layer SC. Therefore, to reliably achieve an electric field mitigation effect, the transformer 10 of the embodiment of the present invention includes a shielding portion 500. This will be described in detail later.

[0125] The cover body 100 may be composed of a plurality of parts. The plurality of parts constituting the cover body 100 may be formed symmetrically with each other, and their structures and functions may be the same.

[0126] In the illustrated embodiment, the cover 100 includes a first cover 101 forming an upper side and a second cover 102 forming a lower side. The first cover 101 and the second cover 102 may be formed to be plane-symmetrical with respect to a horizontal direction.

[0127] Figures 4 to 15 The second housing 102 is shown as the center, but it can be understood that the first housing 101 also has the same structure and function. In other words, the components provided in the second housing 102 described below are also provided in the first housing 101.

[0128] exist Figures 4 to 15 In the illustrated embodiment, the housing 100 includes a housing space 110 , a housing inner surface 120 , a housing opening 130 , a bobbin support portion 140 , and an iron core accommodating portion 150 .

[0129] In addition, further reference Figures 19 to 23The cover body 100 of the illustrated embodiment further includes a cover body communicating portion 160 .

[0130] The housing space 110 is formed within the housing 100. The housing space 110 is defined as the space enclosed by the housing inner surface 120 and the bobbin support portion 140. In other words, the housing space 110 is formed radially between the housing inner surface 120 and the bobbin support portion 140. The housing space 110 is enclosed by the housing inner surface 120 and the bobbin support portion 140, thereby isolating any communication with the outside.

[0131] The housing space 110 communicates with the casing space 620 formed inside the casing 600. The first winding portion 300 housed in the housing space 110 can be electrically connected to a conductor member (not shown) housed in the casing space 620. Furthermore, in the configuration of the shield portion 500, the casing shield member 510 housed in the casing space 620 and the casing shield member 520 housed in the housing space 110 can also be electrically connected.

[0132] The housing space 110 can be formed in a shape corresponding to the housing 100. In the illustrated embodiment, the housing space 110 is a quadrangular prism-shaped space with a quadrilateral cross-section and a vertical height. In this case, the corners of the housing space 110 can be formed to be curved and convex outward. This can alleviate the concentration of the electric field.

[0133] Furthermore, a bobbin support 140 is provided in the housing space 110. The bobbin support 140 extends around the core accommodating portion 150 communicating with the outside, and physically separates the core accommodating portion 150 from the housing space 110. That is, the housing space 110 is not in communication with the core accommodating portion 150.

[0134] The housing space 110 can be connected to the outside via the housing connecting portion 160. After the other components of the transformer 10 are accommodated in the housing space 110, an electrically insulating material can be injected and filled into the housing space 110 through the housing connecting portion 160. In this way, the other components accommodated in the housing space 110 can be fixed.

[0135] The housing space 110 formed in the first housing 101 is surrounded on each side by the housing inner surface 120 and is open toward one side of the second housing 102, that is, the lower side in the illustrated embodiment. Furthermore, the housing space 110 formed in the second housing 102 is surrounded on each side by the housing inner surface 120 and is open toward one side of the first housing 101, that is, the upper side in the illustrated embodiment.

[0136] The open one side of each of the first cover 101 and the second cover 102 may be closed as the first cover 101 and the second cover 102 are combined. That is, the first cover 101 and the second cover 102 cover the one side of each other and are combined.

[0137] The housing space 110 accommodates the first winding portion 300 coupled to the bobbin support portion 140. In addition, the housing space 110 accommodates the shield portion 500 and the shield member coupling portion 800.

[0138] After the components of the transformer 10 are disposed in the enclosure space 110, an electrically insulating material may be injected into the enclosure space 110. In one embodiment, the remaining space of the enclosure space 110, ie, the space other than the space occupied by the components of the transformer 10, may be filled with the electrically insulating material.

[0139] As a result, the various components housed in housing space 110 can be stably maintained in their predetermined positions. Furthermore, random electrical conduction between the various components can be prevented, thereby improving the operational reliability of transformer 10. As described above, the electrically insulating material can be formed from a synthetic resin material such as epoxy resin or a silicone material. In another embodiment, the electrically insulating material can be formed from mineral oil, alkylbenzene, polybutene, alkylnaphthalene, alkyldiphenylethane, silicone oil, a mixture of mineral oil and alkylbenzene, or a vegetable oil such as a natural ester, or a mixture thereof.

[0140] The inner surface 120 of the housing is defined as a surface formed inside the housing 100. The inner surface 120 surrounds the housing space 110 from the outside. As described above, the inner surface 120 of the housing may be configured to surround the other sides of the first housing 101 and the second housing 102 except for the one side.

[0141] The inner surface 120 of the cover is located radially outside the cover space 110, the bobbin support portion 140, and the core accommodating portion 150. When the first cover 101 and the second cover 102 are combined, the inner surface 120 of the cover is not exposed to the outside.

[0142] The cover inner surface 120 may be defined as a plurality. The plurality of cover inner surfaces 120 may be configured to extend from one another and surround the cover space 110 from a plurality of locations. In this case, the portions of the plurality of cover inner surfaces 120 that are continuous with one another may be processed into an arc shape to prevent electric field concentration.

[0143] In the illustrated embodiment, the cover inner surface 120 includes a first cover inner surface 121 , a second cover inner surface 122 , a third cover inner surface 123 , a fourth cover inner surface 124 and a fifth cover inner surface 125 .

[0144] The first cover inner surface 121 is defined as a component of the cover inner surface 120. The first cover inner surface 121 surrounds the cover space 110 from one side. In the illustrated embodiment, the first cover inner surface 121 surrounds the cover space 110 from the bottom. Therefore, the first cover inner surface 121 provided on the first cover 101 can be defined as the upper inner surface, and the first cover inner surface 121 provided on the second cover 102 can be defined as the lower inner surface.

[0145] The bobbin support portion 140 is formed to extend from the first cover inner surface 121. In addition, the first winding portion 300 may be disposed on the first cover inner surface 121.

[0146] The first cover inner surface 121 is continuous with the second cover inner surface 122 , the third cover inner surface 123 , the fourth cover inner surface 124 and the fifth cover inner surface 125 .

[0147] The second cover inner surface 122 is defined as another component of the cover inner surface 120. The second cover inner surface 122 surrounds the cover space 110 from the other side. In the illustrated embodiment, the second cover inner surface 122 surrounds the cover space 110 from the front side. Therefore, the second cover inner surface 122 can be defined as the front inner surface. The second cover inner surface 122 faces the third cover inner surface 123 across the cover space 110.

[0148] The cover opening 130 is formed through the second cover inner surface 122. The cover opening 130 connects the cover space 110 and the sleeve space 620. The first winding portion 300 can be electrically connected to a conductor member (not shown) accommodated in the sleeve space 620 through the cover opening 130.

[0149] A housing shielding member 520 is provided on the second housing inner surface 122. The housing shielding members 520 are electrically connected to the sleeve shielding members 510 accommodated in the sleeve space 620. In the illustrated embodiment, the housing shielding member 520 can extend along the width direction of the second housing inner surface 122, i.e., the left-right direction, and can be electrically connected to the sleeve shielding member 510.

[0150] The third cover inner surface 123 is defined as another component of the cover inner surface 120. The third cover inner surface 123 surrounds the cover space 110 from another side. In the illustrated embodiment, the third cover inner surface 123 surrounds the cover space 110 from the rear side. Therefore, the third cover inner surface 123 can be defined as the rear inner surface. The third cover inner surface 123 faces the second cover inner surface 122 across the cover space 110.

[0151] A cover body connecting portion 160 (see FIG. Figures 19 to 23In the embodiment, a through hole may be formed on the inner surface 123 of the third cover body, communicating with the hollow space formed inside the cover body communication portion 160. Electrically insulating material may be filled into the cover body space 110 through the through hole.

[0152] A cover shielding member 520 is provided on the third cover inner surface 123. The cover shielding member 520 is electrically connected to the cover shielding members 520 located on the fourth cover inner surface 124 and the fifth cover inner surface 125, respectively. In the illustrated embodiment, the cover shielding member 520 extends along the width direction of the third cover inner surface 123, i.e., the left-right direction, and each end portion of the cover shielding member 520 in the extension direction is electrically connected to the cover shielding members 520 located on the fourth cover inner surface 124 and the fifth cover inner surface 125, respectively.

[0153] The fourth cover inner surface 124 is defined as another component of the cover inner surface 120. The fourth cover inner surface 124 surrounds the cover space 110 from another side. In the illustrated embodiment, the fourth cover inner surface 124 surrounds the cover space 110 from the left side. Therefore, the fourth cover inner surface 124 can be defined as the left inner surface. The fourth cover inner surface 124 faces the fifth cover inner surface 125 across the cover space 110.

[0154] A cover shielding member 520 is provided on the fourth cover inner surface 124. The cover shielding member 520 is electrically connected to the cover shielding members 520 located on the second cover inner surface 122 and the third cover inner surface 123. In the illustrated embodiment, the cover shielding member 520 extends along the width direction of the fourth cover inner surface 124, i.e., the front-to-back direction, and each end portion of the cover shielding member 520 in the extension direction is electrically connected to the cover shielding members 520 located on the second cover inner surface 122 and the third cover inner surface 123.

[0155] The fifth housing inner surface 125 is defined as another component of the housing inner surface 120. The fifth housing inner surface 125 surrounds the housing space 110 from another side. In the illustrated embodiment, the fifth housing inner surface 125 surrounds the housing space 110 from the right side. Therefore, the fifth housing inner surface 125 can be defined as the right inner surface. The fifth housing inner surface 125 faces the fifth housing inner surface 125 across the housing space 110.

[0156] A cover shielding member 520 is provided on the fifth cover inner surface 125. The cover shielding member 520 is electrically connected to the cover shielding members 520 located on the second cover inner surface 122 and the third cover inner surface 123, respectively. In the illustrated embodiment, the cover shielding member 520 extends along the width direction of the fifth cover inner surface 125, that is, the front-to-back direction, and each end portion of the cover shielding member 520 in the extension direction is electrically connected to the cover shielding members 520 located on the second cover inner surface 122 and the third cover inner surface 123, respectively.

[0157] In one embodiment, a semiconductive layer SC may be formed on the first to fifth cover inner surfaces 121, 122, 123, 124, and 125. As described above, the total area of the semiconductive layer SC formed on the cover inner surface 120 may be less than 90% of the total area of the cover inner surface 120.

[0158] The cover opening 130 connects the cover space 110 and the sleeve space 620. The cover opening 130 is formed through one of the plurality of cover inner surfaces 120 facing the sleeve 600. In the illustrated embodiment, the cover opening 130 is formed through the second cover inner surface 122 located on the front side.

[0159] The housing opening 130 functions as a passage for the sleeve shielding member 510 of the shielding portion 500 to be exposed to the housing space 110. The sleeve shielding member 510 can be accommodated in the sleeve space 620, with a portion exposed to the housing space 110. The housing opening 130 communicates with the housing space 110 and the sleeve space 620 respectively.

[0160] The cover opening 130 may be any shape that connects the cover space 110 and the sleeve space 620 and allows the sleeve shielding member 510 to pass through. In the illustrated embodiment, the cover opening 130 is cylindrical with a circular cross section and a length in the front-to-back direction.

[0161] A through hole (not shown) for passing a grounding member may be formed through the inner circumference of the housing 100 (or the sleeve 600) surrounding the housing opening 130 or the sleeve space 620. The shield 500 may be electrically connected to an external ground through the through hole.

[0162] exist Figures 7 to 9 In the illustrated embodiment, a semiconductive layer SC may be partially formed on the inner circumference of the housing 100 or the sleeve body 610 surrounding the housing opening 130. Specifically, the semiconductive layer SC and the sleeve shielding member 510 may partially overlap along the radial direction. In other words, the end portion of the semiconductive layer SC facing the sleeve cover 630, i.e., the front end portion, is positioned on the sleeve shielding member 520.

[0163] The bobbin support portion 140 is coupled to the first winding portion 300 accommodated in the housing space 110 . The bobbin support portion 140 supports the coupled first winding portion 300 . The bobbin support portion 140 is formed in the housing space 110 .

[0164] The bobbin support portion 140 extends from the first housing inner surface 121 toward the open side of the housing space 110, i.e., the upper side in the illustrated embodiment. The bobbin support portion 140 is spaced apart from the housing inner surface 120 and disposed inwardly of the housing inner surface 120. In other words, the bobbin support portion 140 faces the housing inner surface 120 across the housing space 110.

[0165] In one embodiment, the bobbin support portion 140 may be inserted into and coupled to the first bobbin space 321 provided in the first winding portion 300. In this embodiment, the bobbin support portion 140 may be formed in a shape corresponding to the first bobbin space 321.

[0166] In the illustrated embodiment, the bobbin support portion 140 includes a pair of facing surfaces extending along the length of the housing 100 and another facing surface extending along the width of the housing 100. Specifically, the bobbin support portion 140 includes a pair of facing surfaces extending in the front-to-back direction and another facing surface continuous with the pair of facing surfaces and extending in the left-to-right direction. The pair of facing surfaces are positioned facing each other across the core accommodating portion 150. The other facing surface is also positioned facing each other across the core accommodating portion 150.

[0167] Specifically, the bobbin support portion 140 has a quadrangular cross-section and a vertically spaced height, and has a rectangular prism shape formed therein, through which the core accommodating portion 150 extends. The core accommodating portion 150 is provided within the bobbin support portion 140, and is open along its height, i.e., the vertical direction in the illustrated embodiment. In other words, the bobbin support portion 140 surrounds the core accommodating portion 150 from the outside.

[0168] The bobbin support portion 140 may be provided in a plurality. The bobbin support portions 140 may be spaced apart from each other and respectively coupled to the plurality of first winding portions 300. In the illustrated embodiment, the bobbin support portion 140 includes a first bobbin support portion 141 disposed toward the fourth cover inner surface 124 and a second bobbin support portion 142 disposed toward the fifth cover inner surface 125.

[0169] exist Figures 8 and 9 In the illustrated embodiment, a semiconductive layer SC can be formed on the outer surface of the bobbin support portion 140, that is, the surface surrounding the housing space 110. In this case, the semiconductive layer SC can have an area smaller than the outer surface of the bobbin support portion 140. In the illustrated embodiment, the semiconductive layer SC is formed so that its upper end is located lower than the upper end of the bobbin support portion 140.

[0170] In addition, Figure 9In the illustrated embodiment, a cover shielding member 520 may be further provided on the outer surface of the bobbin support portion 140. The cover shielding member 520 may be provided to contact the semiconductive layer SC formed on the outer surface of the bobbin support portion 140, thereby alleviating the electric field.

[0171] The core accommodating portion 150 is a space for the core 200 to be accommodated. The core accommodating portion 150 extends along the height direction of the housing 100, that is, in the vertical direction in the illustrated embodiment. The ends of the core accommodating portion 150 in the extending direction, that is, the upper and lower sides in the illustrated embodiment, can be open to allow the core 200 to pass through.

[0172] The core accommodating portion 150 is partially surrounded by the bobbin support portion 140. In the illustrated embodiment, the core accommodating portion 150 is surrounded by the bobbin support portion 140 in radial directions, ie, the front side, the rear side, the left side, and the right side.

[0173] The core accommodating portion 150 may be any shape capable of accommodating the core portion 200. In the illustrated embodiment, the core accommodating portion 150 is a quadrangular prism having a length in the front-to-rear direction longer than in the left-to-right direction and a height in the vertical direction.

[0174] The core accommodating portion 150 may be formed in a plurality. The plurality of core accommodating portions 150 may be formed inside the plurality of bobbin support portions 140, respectively. In the illustrated embodiment, the core accommodating portion 150 includes a first core accommodating portion 151 formed inside the first bobbin support portion 141 and a second core accommodating portion 152 formed inside the second bobbin support portion 142.

[0175] As described above, the bobbin support portion 140 and the core accommodating portion 150 are respectively formed in the first housing 101 and the second housing 102. When the first housing 101 and the second housing 102 are combined, the bobbin support portion 140 and the core accommodating portion 150 formed in each housing 101, 102 are aligned in the direction of combination, that is, in the vertical direction in the illustrated embodiment.

[0176] Further references Figures 19 to 23 The cover body 100 of the illustrated embodiment further includes a cover body communicating portion 160 .

[0177] The housing communicating portion 160 connects the housing space 110 with the outside and functions as a passage for the electrical insulating material filled in the housing space 110 to flow in.

[0178] The cover communicating portion 160 is coupled to one side of the cover 100. A hollow is formed through the cover communicating portion 160, communicating with the cover space 110 and the outside.

[0179] In the illustrated embodiment, the cover communicating portion 160 is located at the rear side of the cover 100 and communicates with the through hole formed on the third cover inner surface 123. The cover communicating portion 160 can be formed at any position that can connect the cover space 110 with the outside.

[0180] After the transformer 10 is housed in the housing space 110 and filled with an electrically insulating material, the housing communication portion 160 can be sealed. For example, the housing communication portion 160 is separated from the housing 100, and the through hole formed on the housing inner surface 120 is sealed, thereby cutting off the connection between the housing space 110 and the outside.

[0181] The cover communicating portion 160 may be in any shape that can communicate the cover space 110 with the outside. In the illustrated embodiment, the cover communicating portion 160 is in the shape of a cylinder with a hollow interior.

[0182] The core portion 200 is magnetized by current applied to one of the plurality of first winding portions 300 or one of the plurality of second winding portions 400, thereby generating magnetic flux. The generated magnetic flux can induce current in another first winding portion of the plurality of first winding portions 300 or another second winding portion of the plurality of second winding portions 400.

[0183] The core portion 200 is coupled to the housing 100. In the illustrated embodiment, the core portion 200 includes a first core portion 201 located at the upper side and a second core portion 202 located at the lower side. The first core portion 201 is coupled to the core accommodating portion 150 provided in the first housing 101. The second core portion 202 is coupled to the core accommodating portion 150 provided in the second housing 102.

[0184] If the first cover 101 and the second cover 102 are combined, the first core 201 and the second core 202 may also contact each other. The first core 201 and the second core 202 accommodated in the core accommodating portion 150 are not exposed to the cover space 110.

[0185] The core 200 is coupled to the first winding portion 300. Specifically, the core 200 faces the first winding portion 300 across the bobbin support 140. In other words, the first winding portion 300, the bobbin support 140, and the core 200 are arranged side by side in the radial direction.

[0186] The core 200 is coupled to the second winding 400. Specifically, the core 200 may penetrate and couple to the second winding 400 supported on the outer surface of the housing 100. In other words, the core 200 and the second winding 400 are arranged side by side along the radial direction.

[0187] The process of the core portion 200 being magnetized by the current to induce the current is a known technique, and thus a detailed description thereof will be omitted.

[0188] The first winding portion 300 is coupled to the core portion 200. The first winding portion 300 is electrically connected to one of an external power source and a load. The first winding portion 300 can receive current for magnetizing the core portion 200 or transmit current induced by the core portion 200 to the outside.

[0189] The first winding portion 300 is accommodated in the housing space 110. The first winding portion 300 can be supported by being coupled to a bobbin support portion 140 located in the housing space 110. In one embodiment, the bobbin support portion 140 can be inserted and coupled to the first winding portion 300.

[0190] The first winding portion 300 is disposed adjacent to the core portion 200 and faces the core portion 200 with the bobbin support portion 140 interposed therebetween.

[0191] There may be a plurality of first winding sections 300. One of the plurality of first winding sections 300 may be coupled to one side of the core section 200, and another of the plurality of first winding sections 300 may be coupled to the other side of the core section 200. In the illustrated embodiment, there are two first winding sections 300, one coupled to the left side and the other to the right side of the core section 200, respectively.

[0192] The first winding portion 300 is electrically connected to an external power source or load. The first winding portion 300 can be electrically connected to the external power source or load using a conductor member (not labeled) through the bushing 600. In one embodiment, high-voltage power can be supplied to the first winding portion 300.

[0193] In the illustrated embodiment, the first winding portion 300 includes a first coil 310 and a first bobbin 320 .

[0194] The first coil 310 is electrically connected to an external power source or load and is wound around the first bobbin 320. In other words, the first coil 310 is coupled to the bobbin support 140 or the core 200 using the first bobbin 320 as a medium.

[0195] The first coil 310 is wound around the first bobbin 320. As the name suggests, the first bobbin 320 can function as a bobbin.

[0196] A first bobbin space 321 is formed within the first bobbin 320. The first bobbin space 321 extends along the height of the first bobbin 320, i.e., in the vertical direction in the illustrated embodiment, and is open at its upper and lower ends. The bobbin support 140 can be inserted and coupled to the first bobbin space 321.

[0197] The first bobbin 320 and the first bobbin space 321 may have shapes corresponding to the shapes of the bobbin support portion 140 and the core portion 200. In the illustrated embodiment, the first bobbin 320 and the first bobbin space 321 formed therein are polygonal prisms having a length extending in the front-to-back direction longer than in the left-to-right direction and having a height in the vertical direction.

[0198] Although not shown, a semiconductive layer SC may be formed on each surface in the height direction of the first bobbin 320, i.e., the lower and upper side surfaces in the illustrated embodiment. Furthermore, a semiconductive layer SC may also be formed on the radial surface of the first bobbin 320 that contacts the first coil 310, i.e., the side surface in the illustrated embodiment.

[0199] The process of inducing current and energizing the plurality of first winding portions 300 coupled to the core portion 200 is a known technique, and thus a detailed description thereof will be omitted.

[0200] The second winding portion 400 is coupled to the core portion 200. The second winding portion 400 is electrically connected to the other of an external power source and a load. The second winding portion 400 can receive current for magnetizing the core portion 200 or transmit current induced by the core portion 200 to the outside.

[0201] The second winding portion 400 is located outside the housing 100. In the illustrated embodiment, the second winding portion 400 is disposed adjacent to the upper outer surface and the lower outer surface of the housing 100, respectively.

[0202] The second winding portion 400 is disposed adjacent to the core portion 200. The core portion 200 may penetrate and be coupled to the second winding portion 400.

[0203] There may be a plurality of second winding sections 400. One of the plurality of second winding sections 400 may be coupled to one side of the core section 200, and another of the plurality of second winding sections 400 may be coupled to the other side of the core section 200. In the illustrated embodiment, there are two second winding sections 400, one coupled to the left side and the other to the right side of the core section 200, respectively.

[0204] The second winding portions 400 may be composed of a plurality of pairs. One pair of the plurality of pairs of second winding portions 400 may be located on one side of the housing 100, and the other pair may be located on the other side of the housing 100. In the illustrated embodiment, the second winding portions 400 include two pairs, one located on the upper side and the other on the lower side of the housing 100.

[0205] The second winding portion 400 is electrically connected to an external power source or load. The second winding portion 400 can be electrically connected to the external power source or load using a wire member (not shown). In one embodiment, low-voltage power can be supplied to the second winding portion 400.

[0206] In the illustrated embodiment, the second winding portion 400 includes a second coil 410 and a second bobbin 420 .

[0207] The second coil 410 is electrically connected to an external power source or load and is wound around a second bobbin 420. In other words, the second coil 410 is coupled to the housing 100 and the core 200 using the second bobbin 420 as a medium.

[0208] The second coil 410 is wound around the second bobbin 420. As the name suggests, the second bobbin 420 can function as a bobbin.

[0209] A second bobbin space 421 is formed within the second bobbin 420. The second bobbin space 421 extends along the height of the second bobbin 420, i.e., in the vertical direction in the illustrated embodiment, and is open at its upper and lower ends. The core 200 can be inserted and coupled to the second bobbin space 421.

[0210] The second bobbin 420 and the second bobbin space 421 may have a shape corresponding to the shape of the core portion 200. In the illustrated embodiment, the second bobbin 420 and the second bobbin space 421 formed therein are in the shape of a polygonal column having a length extending in the front-to-back direction longer than in the left-to-right direction and having a height in the vertical direction.

[0211] Although not shown, a semiconductive layer SC may be formed on each surface in the height direction of the second bobbin 420, i.e., the lower and upper side surfaces in the illustrated embodiment. Furthermore, a semiconductive layer SC may also be formed on the surface of the second bobbin 420 in the radial direction that contacts the second coil 410, i.e., the side surfaces in the illustrated embodiment.

[0212] The process of inducing and energizing the current between the plurality of second winding portions 400 coupled to the core portion 200 is a known technique, and thus a detailed description thereof will be omitted.

[0213] Although not shown in the figure, a semiconductive layer SC may be formed on the side of the second winding shaft 420 facing the cover body 100, that is, the lower side of the second winding shaft 420 located on the upper side of the cover body 100 and the upper side of the second winding shaft 420 located on the lower side of the cover body 100.

[0214] The shield 500 substantially mitigates the generated electric field and prevents insulation breakdown. The shield 500 is housed in the housing space 110 and is isolated from the core 200, the first winding 300, and the conductor member (not shown) through which current directly flows.

[0215] The shielding part 500 is coupled to the housing 100. The shielding part 500 is fixedly coupled to the housing 100 so as not to shake freely. As will be described later, a shielding member coupling portion 800 for fixing the shielding part 500 may be further provided.

[0216] The shielding portion 500 may be configured to contact the semiconductive layer SC formed inside the cover 100. The shielding portion 500 is electrically connected to the semiconductive layer SC, thereby preventing concentration of the generated electric field and local discharge together with the semiconductive layer SC.

[0217] The shielding portion 500 may be formed of a conductive material. In one embodiment, the shielding portion 500 may be formed of aluminum (Al). The shielding portion 500 may induce a portion of the electric field generated in the first winding portion 300 or the second winding portion 400 back to the first winding portion 300 or the second winding portion 400 .

[0218] There may be a plurality of shielding parts 500. The plurality of shielding parts 500 may be combined with the housing 100 at different positions. In this case, the plurality of shielding parts 500 are electrically connected to each other, thereby being able to perform insulation and mitigate the generated electric field.

[0219] In the illustrated embodiment, the shield portion 500 includes a sleeve shield member 510 and a cage shield member 520 .

[0220] The bushing shielding member 510 is located at a portion where the housing 100 and the bushing 600 are combined, and relieves the electric field generated in the first winding portion 300 and a conductor member (not labeled) electrically connected thereto.

[0221] The sleeve shielding member 510 is accommodated in the sleeve space 620. Specifically, a portion of the sleeve shielding member 510 can be accommodated in the sleeve space 620. The remaining portion of the sleeve shielding member 510 can be exposed to the cover space 110 through the cover opening 130. In the illustrated embodiment, the sleeve shielding member 510 is disposed adjacent to the end portion of the sleeve space 620 in the extending direction thereof, which faces the cover 100, i.e., the rear end portion.

[0222] The sleeve shielding member 510 can be electrically connected to an external ground. Thus, the cover shielding member 520 electrically connected to the sleeve shielding member 510 can also be electrically connected to an external ground.

[0223] The sleeve shielding member 510 can be configured to partially overlap the semiconductive layer SC. In the illustrated embodiment, the sleeve shielding member 510 extends in the front-to-back direction. In this case, the semiconductive layer SC can also be partially coated on the inner circumference of the sleeve body 610, which surrounds the sleeve space 620 that accommodates the sleeve shielding member 510. As a result, the front end of the semiconductive layer SC can be located between the front and rear ends of the sleeve shielding member 510.

[0224] At this time, the semiconductive layer SC may extend to such an extent that it does not contact the portion of the bushing shielding member 510 that is electrically connected to the external ground. In other words, in the illustrated embodiment, the front end of the semiconductive layer SC is located between the portion of the bushing shielding member 510 and the rear end of the bushing shielding member 510.

[0225] This is because, if the semiconductive layer SC is formed up to the portion of the bushing shield member 510, there is a risk that an electric field breakdown phenomenon may occur between the ground and the first winding portion 300. In addition, if the semiconductive layer SC extends to the rear end of the bushing shield member 510, there is a risk that the electric field will be concentrated at the front end of the semiconductive layer SC.

[0226] Therefore, the semiconductive layer SC is preferably formed so that its boundary is located between the end portion of the sleeve shield member 510 in the extending direction facing the housing space 110 and the portion grounded to the outside.

[0227] The sleeve shielding member 510 can be of any shape that electrically connects to the housing shielding member 520 and an external ground, and can mitigate the resulting electric field. In the illustrated embodiment, the sleeve shielding member 510 has an annular cross-section and extends in the front-to-back direction, with a hollow cylindrical shape formed within it. The shape of the sleeve shielding member 510 can be understood to correspond to the shape of one side, i.e., the rear end, of the sleeve space 620.

[0228] A conductor member (not shown) passes through the hollow formed inside the bushing shield member 510 , thereby electrically connecting the first winding portion 300 to an external power source or load.

[0229] Although not shown, the outer circumference of the sleeve shielding member 510 may be formed into a mesh shape including a plurality of through holes. In the embodiment, the hollow space formed inside the sleeve shielding member 510 may communicate with the housing space 110 or the sleeve space 620 in the radial direction through the through holes.

[0230] Therefore, when the cover communicating portion 160 is filled with the electrical insulating material, the electrical insulating material flowing into the hollow space flows out radially outward through the through holes, and the sleeve shielding member 510 may not shake randomly.

[0231] In order to fix the sleeve shielding member 510 to the sleeve 600, a fastening member (not labeled) may be provided to engage with a through hole extending through the inner circumference of the sleeve body 610 surrounding the sleeve space 620. The fastening member (not labeled) may be engaged with the through hole and the sleeve shielding member 510, respectively, thereby coupling the sleeve shielding member 510 to the housing 100.

[0232] The cover shielding member 520 is coupled to the cover inner surface 120 or the bobbin support portion 140 , thereby alleviating an electric field generated in the first winding portion 300 .

[0233] The cover shielding member 520 is located in the cover space 110. The cover shielding member 520 may be located on the cover inner surface 120 surrounding the cover space 110 from the radial outer side or on the bobbin support portion 140 surrounding the cover space 110 from the radial inner side.

[0234] The cover shielding member 520 can be configured to contact the semiconductive layer SC. As described above, in embodiments where the semiconductive layer SC is formed to be less than 90% of the area of the cover inner surface 120, the cover shielding member 520 can overlap with the semiconductive layer SC or contact an end portion thereof. Thus, the cover shielding member 520 can be electrically connected to the semiconductive layer SC.

[0235] The cover shielding member 520 and the sleeve shielding member 510 can be electrically connected. Figure 6 As shown, the cover shielding members 520 located on the second cover inner surface 122 of the cover shielding member 520 are electrically connected to the left and right sides of the sleeve shielding member 510 respectively.

[0236] The cover shielding member 520 is electrically connected to an external ground, which is achieved by electrically connecting the cover shielding member 520 and the sleeve shielding member 510 .

[0237] The cover shielding member 520 may extend across each inner surface forming the side surfaces of the plurality of cover inner surfaces 120, namely, the second to fifth cover inner surfaces 122, 123, 124, and 125. In other words, the cover shielding member 520 may extend radially outwardly around the cover space 110.

[0238] Reference Figure 8 The cover shielding member 520 may extend along the outer surface of the bobbin support portion 140, that is, along each surface of the bobbin support portion 140 that radially surrounds the cover space 110. In this embodiment, the cover shielding member 520 disposed on the cover inner surface 120 and the cover shielding member 520 disposed on the surface of the bobbin support portion 140 may be electrically connected to each other.

[0239] Furthermore, as described above, the cover shielding member 520 disposed on the bobbin support portion 140 may be spaced apart from the end portion in the extending direction of the bobbin support portion 140 , ie, the upper end portion in the illustrated embodiment.

[0240] The aforementioned semiconductive layer SC and cover shielding member 520 may be modified and applied in various forms.

[0241] Reference Figure 7 The semiconductive layer SC may be formed on the inner surfaces 121 , 122 , 123 , 124 , and 125 of the first to fifth cover bodies to alleviate the formed electric field.

[0242] In the embodiment, the semiconductive layer SC may be formed on the entire first cover inner surface 121. In other words, the area of the first cover inner surface 121 and the area of the semiconductive layer SC formed on the first cover inner surface 121 may be the same.

[0243] Furthermore, in the embodiment, the semiconductive layer SC may be formed to partially cover the second to fifth cover inner surfaces 122, 123, 124, and 125. In other words, the sum of the areas of the second to fifth cover inner surfaces 122, 123, 124, and 125 may be greater than the sum of the areas of the semiconductive layer SC formed on the second to fifth cover inner surfaces 122, 123, 124, and 125.

[0244] In one embodiment, the semiconductive layer SC may be formed between the first cover inner surface 121 and the cover shielding member 520 located between the second cover inner surface and the fifth cover inner surface 122, 123, 124, and 125. In this case, the semiconductive layer SC may be in contact with the cover shielding member 520 and electrically connected to the cover shielding member 520. Thus, the semiconductive layer SC and the cover shielding member 520 can prevent electric field concentration and insulation breakdown.

[0245] Reference Figure 8 A semiconductive layer SC is also formed on the outer surface of the bobbin support portion 140 to mitigate the resulting electric field. In this case, the area of the semiconductive layer SC formed on the outer surface of the bobbin support portion 140 can be smaller than the outer surface area of the bobbin support portion 140. In the illustrated embodiment, the upper end of the semiconductive layer SC formed on the outer surface of the bobbin support portion 140 is spaced apart from the upper end of the bobbin support portion 140.

[0246] Reference Figure 9 , the cover shielding member 520 may also be provided on the bobbin support portion 140. In this case, the cover shielding member 520 provided on the bobbin support portion 140 may be in contact with and electrically connected to the semiconductive layer SC formed on the bobbin support portion 140. The connection may be formed by the semiconductive layer SC in contact with each cover shielding member 520, or by an additional conductive wire member (not shown).

[0247] Thus, the semiconductive layer SC can prevent electric field concentration and insulation breakdown together with the cover shielding member 520 coupled to the bobbin support portion 140 .

[0248] The sleeve 600 accommodates a conductive member (not shown) that electrically connects the first winding portion 300 housed in the housing space 110 to an external conductor. The sleeve 600 is coupled to and communicates with the housing 100. The sleeve 600 extends toward the housing 100, i.e., toward the front in the illustrated embodiment.

[0249] The sleeve 600 can be formed from an electrically insulating material. In one embodiment, the sleeve 600 can be formed from a synthetic resin material such as epoxy resin or a silicon material. In another embodiment, the electrically insulating material can be formed from mineral oil, alkylbenzene, polybutene, alkylnaphthalene, alkyldiphenylethane, silicone oil, a mixture of mineral oil and alkylbenzene, or a vegetable oil such as a natural ester, or a mixture thereof.

[0250] The sleeve 600 can be formed integrally with the cover body 100, or formed separately from the cover body 100 and then coupled to the cover body 100. In the illustrated embodiment, the sleeve 600 is assumed to be integrally formed with the cover body 100. In the illustrated embodiment, it can also be understood that the sleeve 600 is a component of the cover body 100.

[0251] In the illustrated embodiment, the cannula 600 includes a cannula body 610 , a cannula space 620 , and a cannula cover 630 .

[0252] The sleeve body 610 forms a portion of the sleeve 600 that is exposed to the outside. The sleeve body 610 is coupled to the cover 100. A sleeve space 620 is formed inside the sleeve body 610.

[0253] The bushing body 610 can be any shape that can increase the creepage distance. In the illustrated embodiment, the bushing body 610 is cylindrical with a circular cross-section and extends in the front-to-back direction. The outer periphery of the bushing body 610 is formed with a plurality of disc-shaped structures protruding in radial directions.

[0254] One end of the sleeve body 610 in the extending direction that faces the cover body 100, i.e., the rear end in the illustrated embodiment, is continuous with the cover body 100. The other end of the sleeve body 610 in the extending direction that is opposite to the cover body 100, i.e., the front end in the illustrated embodiment, is coupled to the sleeve cover 630.

[0255] The sleeve body 610 can be divided into a plurality of parts. Each of the plurality of parts of the sleeve body 610 can be combined with the first cover 101 and the second cover 102. In the illustrated embodiment, the sleeve body 610 includes a first sleeve body 611 located on the upper side and combined with the first cover 101, and a second sleeve body 612 combined with the second cover 102.

[0256] The inner circumference of the one end portion in the extending direction of the first sleeve body 611 and the second sleeve body 612, that is, the rear end portion in the illustrated embodiment, can surround the housing opening 130 in the radial direction. In addition, a through hole for fixing the shield 500 to the housing 100 and for electrically connecting to an external ground can be formed on the inner circumference of the one end portion in the extending direction of the first sleeve body 611 and the second sleeve body 612.

[0257] The bushing space 620 is formed inside the bushing body 610. The bushing space 620 communicates with the housing space 110 through the housing opening 130. A conductor member (not shown) electrically connected to the first winding portion 300 can pass through the bushing space 620 to be electrically connected to an external power source or load.

[0258] In addition, the electrical insulating material filled into the cover space 110 through the cover communicating portion 160 may flow into the sleeve space 620 through the cover opening 130 .

[0259] The sleeve cover 630 is coupled to the sleeve body 610 and maintains the coupled state between the first sleeve body 611 and the second sleeve body 612. Furthermore, the sleeve cover 630 is coupled to and supports a conductor member (not shown). The sleeve cover 630 is located on the other side of the sleeve body 610, opposite the housing 100, at each end portion thereof in the extending direction, i.e., the front side in the illustrated embodiment.

[0260] When the cannula cover 630 is coupled to the cannula body 610 , the cannula space 620 is disconnected from the outside, so that the electrical insulating material filled in the housing space 110 completely fills the cannula space 620 but does not flow out.

[0261] The coupling frame 700 is coupled to the cover 100 and the second winding portion 400 to maintain the coupling thereof. The coupling frame 700 is a portion that couples the transformer 10 to other external components.

[0262] The coupling frame 700 is coupled to the cover 100 and the second winding portion 400. Specifically, the coupling frame 700 covers the second winding portion 400 located outside the cover 100 and is coupled to the cover 100 and the second winding portion 400.

[0263] The coupling frame 700 may be provided in a plurality. The plurality of coupling frames 700 may be coupled to the cover 100 and the second winding portion 400 at different positions and support them. In the illustrated embodiment, the coupling frame 700 includes a first coupling frame 710 located on the upper side and a second coupling frame 720 located on the lower side.

[0264] The first coupling frame 710 is coupled to the first cover 101 and the second winding portion 400 located at the upper side. The second coupling frame 720 is coupled to the second cover 102 and the second winding portion 400 located at the lower side.

[0265] Reference Figures 10 to 15 The transformer 10 of the embodiment of the present invention further includes a shielding member coupling portion 800 .

[0266] The shield member coupling portion 800 supports the shield portion 500 coupled to the cover 100, specifically, the cover shield member 520. Due to the shield member coupling portion 800, the coupled state of the cover 100 and the cover shield member 520 can be stably maintained.

[0267] As described above, the cover 100 may be filled with an electrically insulating material. At this time, as the shielding member coupling portion 800 supports the cover shielding member 520, the cover shielding member 520 will not be detached or separated from the cover 100 due to the filled electrically insulating material.

[0268] In the illustrated embodiment, the shielding member coupling portion 800 includes a receiving groove 810 , a supporting member 820 , and a supporting layer 830 .

[0269] Reference Figure 10 , shows an embodiment in which the cover shielding member 520 is supported by the receiving groove 810.

[0270] The receiving groove 810 is formed in the inner surface of the housing inner surface 120 for the housing shielding member 520 to engage, that is, the inner surface of the second housing inner surface to the fifth housing inner surface 122, 123, 124, 125. The receiving groove 810 is formed in a direction opposite to the housing space 110, that is, in the embodiment shown in the figure, it is recessed outside.

[0271] The receiving groove 810 may have a shape corresponding to the shape of the cover shielding member 520. In the illustrated embodiment, the cover shielding member 520 is in the shape of a band having a circular cross section, so the receiving groove 810 may also be formed to have a cross section of a partial circular shape.

[0272] In the embodiment, the diameter of the cross section of the receiving groove 810 can be formed to be smaller than the cross section diameter of the cover shielding member 520. Thus, the cover shielding member 520 can be inserted and coupled to the receiving groove 810, thereby preventing the cover shielding member 520 from being separated.

[0273] The receiving groove 810 may extend corresponding to the cover shielding member 520. In the illustrated embodiment, the cover shielding member 520 extends from the second cover inner surface to the fifth cover inner surface 122, 123, 124, 125. Therefore, the receiving groove 810 may also extend from the second cover inner surface to the fifth cover inner surface 122, 123, 124, 125.

[0274] The receiving groove 810 can be spaced a predetermined distance from the inner surface 121 of the first cover. In other words, the receiving groove 810 can be located at a predetermined height. In this case, the receiving groove 810 can at least partially overlap with the semiconductive layer SC along the radial direction. In other words, the cover shielding member 520 received in the receiving groove 810 can also at least partially contact the semiconductive layer SC.

[0275] In addition, the area of the portion located on the upper side of the accommodating groove 810 (i.e., the portion where the semiconductive layer SC is not formed) in the portion from the second cover inner surface to the fifth cover inner surface 122, 123, 124, and 125 can be more than 10% of the total area of the cover inner surface 120.

[0276] Reference Figures 11 to 12 , shows an embodiment in which the cover shielding member 520 is supported by the supporting member 820.

[0277] The support member 820 is formed on the inner surface of the housing inner surface 120 to which the housing shielding member 520 is coupled, i.e., the inner surfaces 122, 123, 124, and 125 of the second to fifth housing inner surfaces. The support member 820 is formed to protrude toward the housing space 110, i.e., inward in the illustrated embodiment.

[0278] The supporting members 820 may include a plurality of pairs supporting the cover shielding member 520 at different positions. In this case, each pair of supporting members 820 may be spaced apart from each other and face each other with the cover shielding member 520 interposed therebetween.

[0279] In the illustrated embodiment, a pair of support members 820 are respectively located on the upper side and the lower side of the cover shielding member 520 , thereby supporting the upper side and the lower side of the cover shielding member 520 .

[0280] Furthermore, a plurality of pairs of support members 820 are spaced apart from one another along the extension direction of the cover shielding member 520, supporting the cover shielding member 520 from a plurality of positions. In the illustrated embodiment, each pair of support members 820 is spaced apart from one another by a predetermined distance and is disposed along the cover shielding member 520 from the second to the fifth cover inner surfaces 122, 123, 124, and 125.

[0281] The support member 820 can be of any shape capable of supporting the cover shielding member 520. In the illustrated embodiment, the support member 820 has the shape of a truncated cone, with the diameter of the cross section decreasing radially inward. In this case, a protrusion can be formed at the end of the support member 820 in the direction in which it extends, thereby preventing the cover shielding member 520 from detaching.

[0282] The support member 820 can be spaced a predetermined distance from the inner surface 121 of the first cover. In other words, the support member 820 can be positioned at a predetermined height. In this case, the lower support member 820 of the pair of support members 820 can overlap with the semiconductive layer SC along the radial direction. In other words, the cover shielding member 520 located between the pair of support members 820 can at least partially contact the semiconductive layer SC.

[0283] In addition, in the portion from the inner surface of the second cover body to the inner surface of the fifth cover body 122, 123, 124, and 125, the area of the upper portion of the support member 820 located on the upper side in a pair of support members 820 (i.e., the portion where the semiconductive layer SC is not formed) can be more than 10% of the total area of the inner surface 120 of the cover body.

[0284] Reference Figures 13 to 15 , shows an embodiment in which the cover shielding member 520 is supported by the receiving groove 810 and the supporting layer 830.

[0285] In this embodiment, the radially outer portion of the cover shielding member 520 (i.e., the portion opposite to the cover space 110) is inserted into the receiving groove 810 formed by the recesses of the second to fifth cover inner surfaces 122, 123, 124, and 125. In addition, the radially inner portion of the cover shielding member 520 (i.e., the portion facing the cover space 110) is supported by the support layer 830.

[0286] The structure and function of the receiving groove 810 of this embodiment are the same as those of the receiving groove 810 of the above embodiment. Therefore, the support structure of the cover shielding member 520 of this embodiment will be described below with the support layer 830 as the center.

[0287] The support layer 830 is coupled to the housing 100 and accommodated in the housing space 110. The support layer 830 supports the housing shielding member 520 coupled to the second to fifth housing inner surfaces 122, 123, 124, and 125 from the inside.

[0288] In an embodiment where the cover shielding member 520 is also coupled to the bobbin support portion 140 , the support layer 830 may support the cover shielding member 520 coupled to the bobbin support portion 140 from the outside.

[0289] Support layer 830 can be formed from an electrically insulating material. In one embodiment, sleeve 600 in support layer 830 can be formed from a synthetic resin material such as epoxy resin or a silicone material. In another embodiment, the electrically insulating material can be formed from mineral oil, alkylbenzene, polybutene, alkylnaphthalene, alkyldiphenylethane, silicone oil, a mixture of mineral oil and alkylbenzene, or a vegetable oil such as a natural ester, or a mixture thereof.

[0290] In one embodiment, the support layer 830 may be formed in a mesh shape including a plurality of through holes. In this embodiment, even if an electrically insulating material is injected into the housing space 110 , the support layer 830 can be prevented from shaking and the shielding portion 500 can be kept stably connected.

[0291] The support layer 830 can be formed into any shape capable of supporting the cover shielding member 520. In one embodiment, the support layer 830 can be formed by processing with an additional mold, etc. In another embodiment, the support layer 830 can be formed into a shape coated on the inner surface 120 of the cover.

[0292] The support layer 830 may be formed in a shape corresponding to the shapes of the cover space 110 , the cover opening 130 located in the cover space 110 , and the bobbin support portion 140 .

[0293] In the illustrated embodiment, the support layer 830 includes a first support layer 831 , a second support layer 832 , and a third support layer 833 .

[0294] The first supporting layer 831 forms a portion of the supporting layer 830. The first supporting layer 831 contacts the inner surface 120 of the cover and supports the cover shielding member 520 coupled to the inner surface 120 of the cover.

[0295] The first support layer 831 can be formed to conform to the shape of the housing space 110. In the illustrated embodiment, the first support layer 831 includes five surfaces corresponding to the first to fifth housing inner surfaces 121, 122, 123, 124, and 125. Furthermore, an opening corresponding to the housing opening 130 is formed through the side corresponding to the second housing inner surface 122, i.e., the front side in the illustrated embodiment.

[0296] That is, the first supporting layer 831 is formed to surround the inner surface 120 of the cover.

[0297] The second support layer 832 forms another portion of the support layer 830. The second support layer 832 is configured to contact the bobbin support portion 140 and surround the bobbin support portion 140. In an embodiment where the cover shielding member 520 is disposed on the bobbin support portion 140, the second support layer 832 can support the cover shielding member 520 coupled to the bobbin support portion 140.

[0298] The second support layer 832 can be formed to correspond to the shapes of the bobbin support portion 140 and the core accommodating portion 150. In the illustrated embodiment, the second support layer 832 includes a pair of four faces that surround the outer surfaces of the first bobbin support portion 141 and the second bobbin support portion 142. Each pair of four faces is configured to surround the outer surfaces of the first bobbin support portion 141 and the second bobbin support portion 142.

[0299] Furthermore, a hollow space is formed inside the four surfaces of the second support layer 832. The hollow space is open along the height direction thereof, that is, the vertical direction in the illustrated embodiment. The first bobbin support portion 141 and the second bobbin support portion 142 can be inserted into the hollow space.

[0300] That is, the second supporting layer 832 is formed to surround the outer surface of the bobbin supporting portion 140 .

[0301] The third support layer 833 forms another part of the support layer 830. The third support layer 833 is combined with the bobbin support portion 140 and surrounds the bobbin support portion 140. In the illustrated embodiment, the third support layer 833 covers the upper end portion of the bobbin support portion 140.

[0302] The third support layer 833 may be formed in accordance with the shapes of the bobbin support portion 140 and the core accommodating portion 150. In the illustrated embodiment, the third support layer 833 is hollow inside and is formed in a quadrilateral ring shape with quadrilateral edges to surround the upper end portions of the bobbin support portion 140.

[0303] There may be a plurality of third support layers 833. The plurality of third support layers 833 may respectively surround the plurality of bobbin support portions 140. In the illustrated embodiment, a pair of third support layers 833 are provided, covering the upper ends of the first bobbin support portion 141 and the second bobbin support portion 142, respectively.

[0304] The first supporting layer 831 , the second supporting layer 832 and the third supporting layer 833 may be formed integrally or separately and then combined. In either case, as long as the first supporting layer 831 , the second supporting layer 832 and the third supporting layer 833 can be continuously combined with the cover body 100 , it will be sufficient.

[0305] In addition, the first to third supporting layers 831, 832, 833 may be provided independently. In the embodiment, more than one of the first to third supporting layers 831, 832, 833 may be provided.

[0306] In one embodiment, only the first supporting layer 831 may be provided to surround the housing shielding member 520 coupled to the housing inner surface 120 from the inside. In this embodiment, the first supporting layer 831 may be formed to surround one or more of the first to fifth housing inner surfaces 121, 122, 123, 124, and 125.

[0307] For example, the first supporting layer 831 may be formed only on the first cover inner surface 121 forming the lower side of the cover inner surface 120 , or on the second to fifth cover inner surfaces 122 , 123 , 124 , and 125 except the first cover inner surface 121 .

[0308] That is, the first supporting layer 831 may be formed in any shape that can support the cover shielding member 520 .

[0309] In another embodiment, only the second support layer 832 may be provided to surround the surface of the bobbin support portion 140. In this embodiment, an additional member may be provided to support the cover shielding member 520 coupled to the second to fifth cover inner surfaces 122, 123, 124, and 125.

[0310] Reference Figure 16 , which illustrates a transformer 10 according to another embodiment of the present invention.

[0311] In the illustrated embodiment, the semiconductive layer SC is coated on the entire inner surface of the cover 100. In addition, the semiconductive layer SC is coated on a portion of the inner surface of the sleeve 600 facing the cover 100, ie, a portion on the rear side in the illustrated embodiment.

[0312] The semiconductive layer SC coated on the inner surface of the sleeve 600 may contact the sleeve shielding member 510 of the shield portion 500. Thus, the semiconductive layer SC coated on the inner surface of the sleeve 600 may play a role in mitigating the electric field and preventing insulation breakdown together with the sleeve shielding member 510.

[0313] On the other hand, the semiconductive layer SC coated on the inner surface of the cover 100 can be connected to the semiconductive layer SC coated on the inner surface of the sleeve 600. Thus, the semiconductive layer SC coated on the inner surface of the cover 100 can work together with the semiconductive layer SC coated on the inner surface of the sleeve 600 to mitigate the electric field and prevent insulation breakdown.

[0314] Compared to the embodiment in which the cover shielding member 520 is provided, the area of the semiconductive layer SC coated on the inner surface of the cover 100 can be formed wider in this embodiment. In one embodiment, the area of the semiconductive layer SC coated on the inner surface of the cover 100 can be equal to the total area of the inner surface of the cover 100.

[0315] Specifically, the area of the semiconductive layer SC can be equal to the sum of the areas of the first to fifth cover inner surfaces 121, 122, 123, 124, and 125 and the sum of the areas of the outer surfaces of the first bobbin support portion 141 and the second bobbin support portion 142. In other words, the semiconductive layer SC can be applied to the entire inner surface of the cover 100 and the entire outer surface of the bobbin support portion 140.

[0316] In the embodiment, the cover shielding member 520 for electrically connecting to the semiconductive layer SC is not required inside the cover 100. Therefore, the bonding and manufacturing process can be simplified compared to the above-mentioned embodiment.

[0317] In the embodiment, since the semiconductive layer SC is formed on the inner surface of the housing 100 and the inner surface of the bushing 600, the semiconductive layer SC is not exposed to the outside of the transformer 10. Thus, the semiconductive layer SC can perform its electric field mitigation and insulation breakdown prevention functions even without the housing shielding member 520, and is not damaged by the external environment.

[0318] 3. Description of the Manufacturing Method of the Transformer 10 According to the Embodiment of the Present Invention

[0319] Reference Figures 17 to 28 , which illustrates a method for manufacturing the transformer 10 according to an embodiment of the present invention.

[0320] The transformer 10 of the embodiment of the present invention can be manufactured by processing the cover 100 and the bushing 600 for forming its outer shape using a mold M. At this time, the cover 100 and the bushing 600 can be formed by injecting an electrically insulating material such as epoxy resin.

[0321] Furthermore, other components of the transformer 10 can be placed within the interior space of the housing 100 and bushing 600, and then an electrically insulating material can be injected into the interior space to secure the other components and maintain insulation. In other words, the housing 100 and bushing 600 formed by mold processing can serve as another mold for joining and securing the other components.

[0322] In one embodiment, a semiconductive layer SC may be formed on the inner surface of the cover 100 or the sleeve 600. Since the semiconductive layer SC is formed on the inner surface of the cover 100 or the sleeve 600, it is possible to prevent damage to the semiconductive layer SC caused by the external environment. This prevents degradation of insulation performance and electric field mitigation performance caused by damage to the semiconductive layer SC.

[0323] In one embodiment, a housing shielding member 520 may be disposed within the housing 100. The housing shielding member 520 may be electrically connected to the semiconducting layer SC and an external ground, thereby mitigating generated electric fields. This minimizes electric field concentration, insulation breakdown, and partial discharge even during operation of the transformer 10.

[0324] In one embodiment, the semiconductive layer SC may form an area less than 90% of the area of the cover 100. Even in this case, the cover shielding member 520 in contact with the semiconductive layer SC may sufficiently ensure insulation performance and electric field relaxation performance.

[0325] Below, refer to Figures 17 to 28 , a method for manufacturing the transformer 10 according to an embodiment of the present invention is described in detail.

[0326] Reference Figure 17 The manufacturing method of the transformer 10 of the illustrated embodiment includes: a step of manufacturing a cover 100 (S100), a step of coating the interior of the cover 100 with a semiconductive layer SC (S200), a step of combining the first winding portion 300 with the cover 100 (S300), a step of injecting an electrically insulating material into the interior of the cover 100 (S400), and a step of combining the second winding portion 400 with the cover 100 (S500).

[0327] Reference Figures 18 and 19 , illustrates a detailed flow and execution process of the step (S100) of manufacturing the cover body 100. This step S100 is a step of manufacturing the cover body 100 by injecting an electrical insulating material into the mold M (S100).

[0328] First, a mold M is prepared ( S110 ). The mold M may be formed into a shape corresponding to the shape of the cover body 100 and the sleeve 600 combined.

[0329] An electrically insulating material is injected into the mold M, thereby forming the cover 100 and the sleeve 600 using the mold (S120). In this embodiment, it can be understood that the cover 100 and the sleeve 600 are integrally formed. In one embodiment, the electrically insulating material can be formed from any material that can be molded, such as a synthetic resin material such as epoxy resin, a silicone material, mineral oil, alkylbenzene, polybutene, alkylnaphthalene, alkyldiphenylethane, silicone oil, a mixture of mineral oil and alkylbenzene, or a vegetable oil such as a natural ester, or an insulating oil mixture thereof.

[0330] Reference Figures 20 to 21 , illustrates the detailed flow and execution process of the step (S200) of coating the semiconductive layer SC inside the cover 100. This step S200 is a step of forming the semiconductive layer SC on the inner surface of the manufactured cover 100 (S200).

[0331] A semiconductive layer SC is applied to the housing inner surface 120, which radially surrounds the housing space 110 formed within the housing 100 (S210). At this point, the area of the semiconductive layer SC formed on the first housing inner surface 121 can be equal to the area of the first housing inner surface 121. Furthermore, the area of the semiconductive layer SC formed on the second through fifth housing inner surfaces 122, 123, 124, and 125 can be smaller than the sum of the areas of the second through fifth housing inner surfaces 122, 123, 124, and 125.

[0332] In one embodiment, the total area of the semiconducting layer SC may be maintained to be less than 90% of the total area of the inner surface 120 of the cover.

[0333] Furthermore, the semiconductive layer SC is applied to the surface of the bobbin support portion 140 radially surrounding the housing space 110 formed inside the housing 100 ( S220 ). This step S220 can be understood as an embodiment in which the semiconductive layer SC is also formed on the bobbin support portion 140 .

[0334] At this time, the area of the semiconductive layer SC formed on the surface of the bobbin support portion 140 is formed to be less than the area of the surface of the bobbin support portion 140. In one embodiment, the total area of the semiconductive layer SC formed on the cover inner surface 120 and the bobbin support portion 140 can be maintained at less than 90% of the total area of the cover inner surface 120 and the bobbin support portion 140.

[0335] At this time, the semiconductive layer SC may also be partially coated on the sleeve body 610. Thus, a portion of the sleeve shielding member 510 accommodated in the sleeve space 620 may contact the semiconductive layer SC, and another portion of the sleeve shielding member 510 may be separated from the semiconductive layer SC.

[0336] On the other hand, the semiconductive layer SC can be coated on the inner surface of the cover 100 or the sleeve body 610 in various ways. For example, the semiconductive layer SC can be coated on the inner surface of the cover 100 or the sleeve body 610 by affixing, electroplating, evaporating, pouring, or spraying.

[0337] On the other hand, as mentioned above, Figure 16 In the case of the transformer 10 of another embodiment of the present invention, the semiconductive layer SC can be applied to the entire inner surface 120 of the cover. As described above, in this embodiment, the coating area of the semiconductive layer SC can be equal to the sum of the area of the inner surface 120 of the cover and the area of the outer surface of the bobbin support portion 140.

[0338] Reference Figures 22 to 24 , illustrates the detailed flow and execution process of the step (S300) of combining the first winding portion 300 with the cover 100. This step S300 is a step of combining the first winding portion 300 within the cover 100 formed with the semiconducting layer SC, and disposing the shield portion 500 (S300) for mitigating the electric field generated by the first winding portion 300 or the second winding portion 400.

[0339] The first coil 310 is wound around the first bobbin 320 to produce the first winding portion 300 ( S310 ). As described above, there may be a plurality of first winding portions 300 , each of which is disposed adjacent to different positions of the core portion 200 .

[0340] The first bobbin 320 is coupled to the bobbin support portion 140 formed on the housing 100 (S320). As described above, the bobbin support portion 140 includes a plurality of bobbin support portions, including a first bobbin support portion 141 and a second bobbin support portion 142. The first bobbin support portion 141 and the second bobbin support portion 142 are respectively inserted into and coupled to a first bobbin space 321 formed through the interior of the first bobbin 320. Thus, the plurality of first winding portions 300 are spaced apart from each other.

[0341] The sleeve shielding member 510 is disposed in the sleeve space 620 formed inside the sleeve 600 coupled to the housing 100 (S330). The sleeve shielding member 510 may be disposed so as to partially overlap with the semiconductive layer SC formed on the inner circumferential surface of the sleeve body 610. Specifically, the sleeve shielding member 510 may overlap with the semiconductive layer SC on one side facing the housing 100, while being separated from the semiconductive layer SC on the other side.

[0342] In addition, the sleeve shielding member 510 is disposed so as to be exposed to the housing space 110 through the housing opening 130 .

[0343] The housing shielding member 520 is configured to contact the semiconductive layer SC coated inside the housing 100 and electrically connect to the sleeve shielding member 510 (S340). The housing shielding member 520 extends from the second housing inner surface surrounding the housing space 110 to the fifth housing inner surfaces 122, 123, 124, and 125.

[0344] At this time, the cover shielding member 520 may be configured to contact the semiconductive layer SC formed on the second to fifth cover inner surfaces 122 , 123 , 124 , and 125 , and conduct electricity with the semiconductive layer SC.

[0345] Furthermore, the cover shielding member 520 disposed on the second cover inner surface 122 is electrically connected to the sleeve shielding member 510. Thus, the cover shielding member 520 can be electrically connected to the sleeve shielding member 510 and the external ground.

[0346] On the other hand, Figure 16 As shown, in an embodiment where the semiconductive layer SC is coated on the entire inner surface 120 of the cover body and the entire outer surface of the bobbin support portion 140, step S340 can be omitted. That is, in this embodiment, the semiconductive layer SC coated on the entire outer surface of the cover body 120 and the bobbin support portion 140 is connected to the semiconductive layer SC coated on the inner surface of the sleeve 600, thereby achieving the effects of electric field relaxation and insulation breakdown prevention.

[0347] The execution order of the steps ( S300 ) of incorporating the first winding portion 300 inside the cover 100 formed with the semiconductive layer SC and disposing the shield portion 500 for mitigating the electric field formed by the first winding portion 300 or the second winding portion 400 may be changed.

[0348] That is, in the illustrated embodiment, the first winding portion 300 is first manufactured and then coupled to the shield portion 500 and the housing 100. Alternatively, the order of executing the detailed steps S310, S320, S330, and S340 of step S300, such as manufacturing and coupling the first winding portion 300, may be changed after coupling the shield portion 500 and the housing 100.

[0349] Reference Figures 25 to 26 , illustrates the detailed flow and execution process of the step (S400) of injecting an electrical insulating material into the housing 100. This step S400 is a step of injecting the electrical insulating material after the housing space 110 is sealed, thereby fixing the various components contained in the housing space 110 (S400).

[0350] First, the first housing 101 and the second housing 102 are sealed and joined together to form the housing space 110 therein (S410). At this time, the bobbin support portions 140 formed in the first housing 101 and the second housing 102 are also aligned, thereby cutting off the connection between the housing space 110 and the core accommodating portion 150.

[0351] Subsequently, an electrically insulating material is injected through the housing communication portion 160 formed on one side of the first housing 101 and the second housing 102, which connects the housing space 110 to the outside (S420). In one embodiment, the electrically insulating material can be formed from a synthetic resin material such as epoxy resin or a silicon material. As described above, in another embodiment, the electrically insulating material can be formed from mineral oil, alkylbenzene, polybutene, alkylnaphthalene, alkyldiphenylethane, silicone oil, a mixture of mineral oil and alkylbenzene, or a vegetable oil such as a natural ester, or an insulating oil material mixed therewith.

[0352] Next, the cover body communication portion 160 is sealed, thereby sealing the cover body space 110 (S430). In one embodiment, step S430 can be performed by removing the cover body communication portion 160 and sealing the through hole formed on the third cover inner surface 123.

[0353] Although not shown as a step, the cannula cover 630 may be coupled to the cannula body 610 to close the cannula space 620. Thus, the cannula space 620 and the housing space 110 communicating therewith are sealed, and communication with the outside is cut off.

[0354] Reference Figures 27 and 28 , illustrates the detailed flow and execution process of the step (S500) of combining the second winding portion 400 with the cover 100. This step S500 is the step (S500) of combining the second winding portion 400 and the core portion 200 with the cover 100 to complete the transformer 10.

[0355] The second coil 410 is wound around the second bobbin 420 to produce the second winding portion 400 ( S510 ). As described above, there may be a plurality of second winding portions 400 , each of which is disposed adjacent to different positions of the core portion 200 .

[0356] The manufactured second winding portion 400 is configured to cover the cover 100 (S520). In this case, the second winding portion 400 may include a plurality of pairs, each pair comprising two winding portions. One pair of the second winding portions 400 in the plurality of pairs may be configured to cover the first cover 101 from the outside. The other pair of the second winding portions 400 in the plurality of pairs may be configured to cover the second cover 102 from the outside.

[0357] At this time, the second bobbin space 421 formed inside the second winding unit 400 may be arranged to overlap with the first core accommodating portion 151 and the first bobbin space 321 .

[0358] Subsequently, the core portion 200 is connected to the first bobbin space 321 formed inside the first bobbin 320 and the second bobbin space 421 formed inside the second bobbin 420 (S530). At this time, the first bobbin space 321 is connected to the bobbin support portion 140, and the core accommodating portion 150 is formed inside the bobbin support portion 140.

[0359] That is, the bobbin support portion 140 , the core accommodating portion 150 , the first bobbin space 321 , and the second bobbin space 421 are arranged to overlap.

[0360] The core portion 200 includes a first core portion 201 combined with the first cover 101 , a second cover 102 , and a second core portion 202 .

[0361] The first core portion 201 is coupled to the first housing 101, and the first and second winding portions 300 and 400 coupled to the first housing 101. The second core portion 202 is coupled to the second housing 102, and the first and second winding portions 300 and 400 coupled to the second housing 102. The inserted first and second core portions 201 and 202 may contact each other.

[0362] In addition, although not shown as a step, a step of covering the core part 200 and the second winding part 400 with the coupling frame 700 and coupling with the cover body 100 may be further included.

[0363] Although the embodiments of the present invention have been described, the concept of the present invention is not limited to the embodiments presented in this specification. Ordinary technicians in the field who understand the concept of the present invention can easily propose another embodiment within the same scope of the concept by adding, changing, deleting, or appending constituent elements, but this should also be considered to fall within the scope of the concept of the present invention.

[0364] 10: Transformer 100: Cover

[0365] 101: First cover 102: Second cover

[0366] 110: Cover space 120: Cover inner surface

[0367] 121: Inner surface of the first cover 122: Inner surface of the second cover

[0368] 123: Inner surface of the third cover 124: Inner surface of the fourth cover

[0369] 125: inner surface of the fifth cover 130: cover opening

[0370] 140: bobbin support portion 141: first bobbin support portion

[0371] 142: Second bobbin support portion 150: Iron core accommodating portion

[0372] 151: First core accommodating portion 152: Second core accommodating portion

[0373] 160: Cover communicating portion 200: Iron core portion

[0374] 201: First core part 202: Second core part

[0375] 300: First winding portion 310: First coil

[0376] 320: First winding shaft 321: First winding shaft space

[0377] 400: Second winding portion 410: Second coil

[0378] 420: Second winding shaft 421: Second winding shaft space

[0379] 500: Shielding part 510: Sleeve shielding member

[0380] 520: Cover shielding member 600: Sleeve

[0381] 610: sleeve body 611: first sleeve body

[0382] 612: Second sleeve body 620: Sleeve space

[0383] 630: Casing cover 700: Combined frame

[0384] 710: First combination frame 720: Second combination frame

[0385] 800: Shielding member coupling portion 810: Accommodating groove

[0386] 820: Support member 830: Support layer

[0387] 831: First support layer 832: Second support layer

[0388] 833: Third support layer SC: semiconductive layer

[0389] M: mold

Claims

1. A transformer, wherein: include: The cover body has a cover space formed therein; a first winding portion electrically connected to an external power source or load and accommodated in the housing space; a shielding portion, housed in the housing space to be separated from the first winding portion and electrically connected to the ground; as well as a semiconductive layer formed to partially cover a surface surrounding the cover space; The semiconductive layer is formed to have an area that is smaller than the total area of the surface surrounding the cover space by a predetermined ratio; The shielding portion is located in the cover space at a position in contact with the semiconductive layer; The semiconductive layers respectively formed on the plurality of surfaces surrounding the housing space are continuous with each other and are in electrical contact with the shielding portion.

2. The transformer according to claim 1, wherein: The sleeve comprises a sleeve, the sleeve is combined with the cover body, and a sleeve space communicating with the cover body space is formed inside the sleeve; The shielding portion includes: a bushing shielding member, located in the bushing space and electrically connected to the ground; and The cover shielding member is combined with the surface surrounding the cover space and is electrically connected to the sleeve shielding member.

3. The transformer according to claim 2, wherein: The semiconductive layer is further formed on the inner surface of the sleeve surrounding the sleeve space and is continuous with the semiconductive layer formed on the surface surrounding the cover space; The sleeve shielding member extends along a direction in which the sleeve extends, with one end portion thereof overlapping with the inner surface of the sleeve and the other end portion thereof spaced apart from the semiconductive layer.

4. The transformer according to claim 2, wherein: The semiconductive layer is further formed on the inner surface of the sleeve surrounding the sleeve space and is continuous with the semiconductive layer formed on the surface surrounding the cover space; The bushing shielding member extends along a direction in which the bushing extends, and a portion between respective ends thereof in the extending direction is electrically connected to the ground; The semiconductive layer is formed so that a boundary thereof is located between one end portion of the bushing shielding member opposite to the cover body and the one portion.

5. The transformer according to claim 2, wherein: The cover body comprises: The inner surface of the first cover supports the first winding portion; The second cover inner surface and the third cover inner surface are each continuous with the first cover inner surface and extend in one direction, and the second cover inner surface and the third cover inner surface are arranged facing each other across the cover space; and The fourth cover inner surface and the fifth cover inner surface are each continuous with the first cover inner surface to the third cover inner surface, extending in another direction, and the fourth cover inner surface and the fifth cover inner surface are arranged facing each other across the cover space; The semiconductive layer is formed to cover at least a portion of each of the inner surfaces of the first to fifth cover bodies.

6. The transformer according to claim 5, wherein: The area of the semiconductive layer formed on the inner surface of the first cover is formed to be smaller than the area of the inner surface of the first cover; The area of the semiconductive layer formed on the inner surface of the second cover to the inner surface of the fifth cover is formed to be smaller than the sum of the areas of the inner surface of the second cover to the inner surface of the fifth cover.

7. The transformer according to claim 5, wherein: The cover shielding member extends from the second cover inner surface to the fifth cover inner surface to surround the cover space, and is spaced a predetermined distance from one end of the second cover inner surface to the fifth cover inner surface in the height direction opposite to the first cover inner surface; The semiconductive layer is formed from the cover shielding member to the inner surface of the first cover.

8. The transformer according to claim 6, wherein: The total area of the semiconductive layer formed on the inner surface of the first cover to the inner surface of the fifth cover is smaller than 90% of the total area of the inner surface of the first cover to the inner surface of the fifth cover.

9. The transformer according to claim 5, wherein: The cover body comprises: a bobbin support portion extending from the inner surface of the first cover in the height direction and spaced apart from the inner surfaces of the second cover to the fifth cover; and An iron core accommodating portion is formed through the interior of the bobbin support portion to accommodate the iron core portion, wherein the communication between the iron core accommodating portion and the cover space is cut off; The first winding portion includes: a first winding shaft, wherein a first winding shaft space for the winding shaft support portion to penetrate and engage is formed inside the first winding shaft; and The first coil is wound around the first bobbin and is electrically connected to an external power source or load.

10. The transformer according to claim 9, wherein: The semiconductive layer is formed to cover the surface of the winding shaft support portion that faces the cover space; The area of the semiconductive layer formed on the surface of the bobbin support portion is formed to be smaller than the area of the surface of the bobbin support portion; The cover shielding member is arranged on the surface of the bobbin support portion so as to be in contact with the semiconductive layer.

11. The transformer according to claim 10, wherein: The cover shielding member extends along the surface of the bobbin support portion to surround the core accommodating portion and is spaced a predetermined distance from one end of the surface of the bobbin support portion in the height direction opposite to the inner surface of the first cover; The semiconductive layer is formed on the surface of the bobbin support portion from the cover shielding member to the inner surface of the first cover.

12. A transformer, wherein: include: The cover body has a cover space formed therein; a sleeve, combined with the cover body, wherein a sleeve space communicating with the cover body space is formed inside the sleeve; a shielding portion, accommodated in the sleeve space and electrically connected to the ground; as well as a semiconductive layer formed to cover at least a portion of each of a surface surrounding the cover space and a surface surrounding the sleeve space; The semiconductive layer is formed to cover the entire surface surrounding the cover space, and to cover a portion of the surface surrounding the sleeve space that contacts the shielding portion so as to be in contact with the shielding portion.

13. The transformer according to claim 12, wherein: A portion of the semiconductive layer that covers the surface surrounding the sleeve space and a portion that covers the surface surrounding the cover space are continuous with each other.

14. The transformer according to claim 12, wherein: The cover body includes a bobbin support portion, the bobbin support portion is located in the cover body space, and extends along the height direction from a surface of the cover body surrounding the cover body space on one side in the height direction; The semiconductive layer is formed to cover the entire surface of the bobbin support portion that faces the cover space.

Images