Substrate processing method
The laser beam processing method is used to form holes on the substrate and cut them, which solves the problems of substrate miniaturization and film peeling, and realizes independent separation between the film and substrate and shortens the manufacturing time.
Patent Information
- Application Number
- CN202480006638.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-01-05
- Filing Date
- 2024-01-04
- Publication Date
- 2025-08-12
AI Technical Summary
In the prior art, printed circuit boards using plastic substrates are not suitable for miniaturization, and silicon substrates cause excessive thickness of the package and the film and substrate are easily separated when cutting the substrate with the film attached.
By using a laser beam processing method, the substrate surface is exposed through the first laser beam, and the substrate is formed, and the second and third laser beams are overlapped with the holes to ensure that the film is not peeled from the substrate.
Independent separation between the film and substrate during the cutting process is achieved, reducing the defect rate and shortening the manufacturing time.
Smart Images
Figure CN120476674A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to a substrate processing method. Background Art
[0002] Recently, in order to mass-produce high-performance packages with high added value, related-art printed circuit boards (PCBs) have become unsuitable for miniaturization due to the uneven surface of printed circuit boards made from plastic substrates. Furthermore, using silicon as a substrate has the disadvantage of making the resulting packages too thick. Recently, attempts have been made to produce printed circuit boards using glass substrates. Summary of the Invention
[0003] Technical issues
[0004] Therefore, the present disclosure has been made in view of the above-mentioned problems, and an object of the present disclosure is to provide a substrate processing method in which a film and a substrate are not separated from each other even when a substrate to which a film is attached is cut.
[0005] Technical Solution
[0006] To achieve the above-mentioned object, a substrate processing method is provided, which includes the following steps: preparing a substrate having a first insulating layer on one surface thereof; exposing one surface of the substrate by irradiating the first insulating layer with a first laser beam; forming a plurality of holes passing through the substrate by irradiating a second laser beam onto one exposed surface of the substrate; irradiating a third laser beam onto one surface of the substrate to overlap with the plurality of holes; and cutting the substrate.
[0007] Furthermore, the step of cutting the substrate includes exposing a portion of the upper surface of the substrate without being covered by the first insulating layer.
[0008] Furthermore, the first laser beam is irradiated to form a first laser pattern including a plurality of light spots arranged along concentric circles relative to a first position, and a second laser pattern including a plurality of light spots arranged along concentric circles relative to a second position spaced apart from the first position along a first direction, wherein the first laser pattern and the second laser pattern overlap each other.
[0009] Furthermore, the first laser beam is irradiated to form an annular first laser pattern and an annular second laser pattern, the annular first laser pattern being disposed along a concentric circle relative to a first position, the annular second laser pattern being disposed along a concentric circle relative to a second position spaced apart from the first position in a first direction, and the first laser pattern and the second laser pattern overlapping each other.
[0010] Furthermore, a first laser beam is irradiated to form a spiral laser pattern including a plurality of light spots extending in a first direction.
[0011] Furthermore, the plurality of light spots overlap or contact each other.
[0012] Furthermore, the substrate processing method further includes the step of moving the substrate or moving the laser irradiator for irradiating the first laser beam after forming the first laser pattern and before forming the second laser pattern.
[0013] In addition, the second laser beam includes a first sub-laser beam irradiated in the first direction and a second sub-laser beam irradiated in the second direction, and the first sub-laser beam and the second sub-laser beam cross each other in the substrate.
[0014] Furthermore, the plurality of holes includes a first hole having a first diameter and a second hole disposed adjacent to the first hole and having the first diameter, and a first distance between the first hole and the second hole is greater than the first diameter in each of the plurality of holes.
[0015] In addition, the step of exposing one surface of the substrate includes: forming a first portion and a second portion of the first insulating layer spaced apart from each other relative to the plurality of holes, and irradiating the first sub-laser beam and the second sub-laser beam to a space between the first portion and the second portion of the first insulating layer without contacting the first portion and the second portion of the first insulating layer.
[0016] In addition, a substrate processing method is provided, which includes the following steps: preparing a substrate having a first film on one surface of the substrate; exposing one surface of the substrate by removing a portion of the first film; forming a plurality of holes passing through the substrate on the one exposed surface of the substrate; irradiating a third laser beam onto the one surface of the substrate to overlap with the plurality of holes; and cutting the substrate.
[0017] Furthermore, the third laser beam is irradiated to form a plurality of laser patterns that overlap with each other and are configured to have a circular spot.
[0018] Furthermore, the third laser beam is irradiated to form a plurality of laser patterns that overlap with each other and are configured to have an elliptical spot.
[0019] Furthermore, the step of cutting the substrate includes cooling the substrate irradiated with the third laser beam.
[0020] Furthermore, the step of cooling the substrate uses air at room temperature or lower.
[0021] In addition, a first portion of the first membrane that is arranged on one side relative to the multiple holes and a second portion of the first membrane that is arranged on the other side relative to the multiple holes are arranged on one surface of the substrate, and the multiple holes are exposed to the outside through the groove between the first portion and the second portion of the first membrane.
[0022] In addition, the size of the third laser beam is smaller than the width between the first portion and the second portion of the first film.
[0023] Furthermore, the plurality of holes are arranged along a straight line extending in the first direction.
[0024] Beneficial effects
[0025] According to the present disclosure, the following effects can be achieved.
[0026] According to one embodiment of the present disclosure, after the film is cut by the first laser, the substrate is separated by the second laser and the third laser. Therefore, even if the substrate to which the film is attached is separated, the film may not be peeled or separated from the substrate.
[0027] In addition, according to one embodiment of the present disclosure, the film and the substrate are separated independently, so that the defect rate of the separated substrate can be minimized. Moreover, since the substrate is separated while the film is attached to a mother substrate, the manufacturing time of the entire process can be shortened.
[0028] The effects of the present disclosure are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the following description. BRIEF DESCRIPTION OF THE DRAWINGS
[0029] Figure 1 is a cross-sectional view of a substrate processed by a substrate processing method according to one embodiment of the present disclosure.
[0030] Figure 2 is a flow chart of a substrate processing method according to one embodiment of the present disclosure.
[0031] Figure 3 is a cross-sectional view of a substrate processing method according to one embodiment of the present disclosure. In this case, Figure 3 It is a specific example Figure 2 Cross-sectional view of the first step.
[0032] Figure 4 is a cross-sectional view of a substrate processing method according to one embodiment of the present disclosure. In this case, Figure 4 It is a specific example Figure 2 sectional views of the second and third steps.
[0033] Figure 5a is a plan view of a substrate processing method according to one embodiment of the present disclosure. Figure 5a It is a specific example Figure 2 The floor plan of the second and third steps.
[0034] Figure 5b is a plan view of a substrate processing method according to another embodiment of the present disclosure. Figure 5a It is a specific example Figure 2 The floor plan of the second and third steps.
[0035] Figure 6 is a plan view of a substrate processing method according to one embodiment of the present disclosure. In this case, Figure 6 It is a specific example Figure 2 The floor plan of the second and third steps.
[0036] Figure 7 is a plan view of a substrate processing method according to another embodiment of the present disclosure. In this case, Figure 7 It is a specific example Figure 2 The floor plan of the second and third steps.
[0037] Figure 8 is a plan view of a substrate processing method according to another embodiment of the present disclosure. In this case, Figure 8 It is a specific example Figure 2 The floor plan of the second and third steps.
[0038] Figure 9 is a cross-sectional view of a substrate processing method according to one embodiment of the present disclosure. Figure 9 It is a specific example Figure 2 A cross-sectional view of the fourth step.
[0039] Figure 10 is a plan view of a substrate processing method according to one embodiment of the present disclosure. Figure 10 It is a specific example Figure 2 Floor plan of the fourth step.
[0040] Figure 11 is a cross-sectional view of a substrate processing method according to one embodiment of the present disclosure. Figure 11 It is a specific example Figure 2 A cross-sectional view of the fifth step.
[0041] Figure 12 is a plan view of a substrate processing method according to one embodiment of the present disclosure. Figure 12 It is a specific example Figure 2 The fifth step of the floor plan.
[0042] Figure 13 is a plan view of a substrate processing method according to one embodiment of the present disclosure. Figure 13 It is a specific example Figure 2 The fifth step of the floor plan.
[0043] Figure 14 is a cross-sectional view of a substrate processing method according to one embodiment of the present disclosure. Figure 14 It is a specific example Figure 2 A cross-sectional view of the sixth step. DETAILED DESCRIPTION
[0044] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. However, the embodiments described below are presented only for illustrative purposes to help clearly understand the present disclosure and are not intended to limit the scope of the present disclosure.
[0045] The shapes, sizes, ratios, angles, and quantities disclosed in the accompanying drawings for describing the embodiments of the present disclosure are merely examples, and the present disclosure is therefore not limited to the details illustrated. Like reference numerals refer to like elements throughout. In the following description, when a detailed description of a related known function or configuration is determined to unnecessarily obscure the key points of the present disclosure, the detailed description will be omitted.
[0046] When the terms "include," "have," and "comprise" are used in this specification, another part may also be present unless "only" is used. Terms in the singular may include plural forms unless otherwise specified. When constructing an element, the element is interpreted as including an error range even if there is no explicit description.
[0047] When describing a positional relationship, for example, when the positional order is described as "on," "above," "below," "under," and "beside," the case where there is no contact therebetween may be included unless "just" or "directly" is used.
[0048] Spatially relative terms such as "below or below," "lower," "above," and "upper" may be used herein to readily describe the relationship of one element or structure to other elements or structures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device when in use or operation, in addition to the orientation depicted in the accompanying drawings. For example, if the device in the drawings were turned over, an element described as being "below or below" another element or structure would then be oriented "above" the other element or structure. Thus, the exemplary term "below" can include both a lower and an upper direction. Similarly, the exemplary term "above or upper" can include both an upper and a lower direction.
[0049] When describing a temporal relationship, for example, when a temporal order is described as “after,” “subsequently,” “next,” and “before,” discontinuous cases may be included unless “just” or “directly” is used.
[0050] It will be understood that although the terms "first," "second," etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are merely used to distinguish one element from another. For example, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element, without departing from the scope of this disclosure.
[0051] It should be understood that the term "at least one" includes all combinations related to any one item. For example, "at least one of a first element, a second element, and a third element" may include all combinations of two or more elements selected from the first element, the second element, and the third element, as well as each of the first element, the second element, and the third element.
[0052] As will be fully appreciated by those skilled in the art, the features of the various embodiments of the present disclosure may be combined or combined with each other in part or in whole, and may interoperate and technically drive each other differently. The embodiments of the present disclosure may be performed independently of each other, or may be performed together in a mutually dependent relationship.
[0053] Figure 1 is a cross-sectional view of a substrate processed by a substrate processing method according to one embodiment of the present disclosure.
[0054] like Figure 1 As shown, the substrate processed by the substrate processing method according to one embodiment of the present disclosure (see Figure 3 The substrate 10a may be divided into a first substrate 10a and a second substrate 10b. In this case, the first substrate 10a includes a first base substrate 100a, a first portion 210a of the first film 210, and a third portion 220a of the second film 220, and the second substrate 10b includes a second base substrate 100b, a second portion 210b of the first film 210, and a fourth portion 220b of the second film 220.
[0055] The first portion 210a of the first film 210 may be disposed on one surface of the first base substrate 100a (e.g., the upper surface of the first base substrate 100a), and the third portion 220a of the second film 220 may be disposed on the other surface of the first base substrate 100a (e.g., the lower surface of the first base substrate 100a). Similarly, the second portion 210b of the first film 210 may be disposed on one surface of the second base substrate 100b (e.g., the upper surface of the second base substrate 100b), and the fourth portion 220b of the second film 220 may be disposed on the other surface of the second base substrate 100b (e.g., the lower surface of the second base substrate 100b).
[0056] According to the substrate processing method according to one embodiment of the present disclosure, even when the substrate to which the first film 210 and the second film 220 are attached (see Figure 3 When the mother substrate 10 (e.g., a mother glass) is separated or cut into the first substrate 10a and the second substrate 10b, the first portion 210a of the first film 210 and the third portion 210c of the second film 210 are not detached, separated or peeled off from the first base substrate 100a of the first substrate 10a, and the second portion 210b of the first film 210 and the fourth portion 220b of the second film 220 are not detached, separated or peeled off from the second base substrate 100b of the second substrate 10b.
[0057] As mentioned above, on the substrate (see Figure 3 After forming the first film 210 and the second film 220 on a mother substrate (e.g., a mother glass), the substrate (see Figure 3 '10') is divided into small units so that the defect rate of a plurality of first substrates 10a or second substrates 10b to be used in electronic devices and electronic equipment can be minimized, whereby the manufacturing time can be shortened.
[0058] Figure 2 is a flow chart of a substrate processing method according to one embodiment of the present disclosure.
[0059] like Figure 2 As shown, a substrate processing method according to an embodiment of the present disclosure includes a first step S110 to a sixth step S160. First, the first step S110 includes preparing a base substrate 100 having a first film 210 on one surface and a second film 220 on the other surface, a second step S120 includes exposing a portion of one surface of the base substrate 100 by irradiating the first film 210 with a first laser 310, a third step S130 includes exposing a portion of the other surface of the base substrate 100 by irradiating the second film 220 with the first laser 310, a fourth step S140 includes forming a plurality of holes 500 at fixed intervals by irradiating the second laser 410 onto the one surface and / or the other surface of the exposed base substrate 100, a fifth step S150 includes irradiating the third laser 610 along the plurality of holes 500, and finally, a sixth step S160 includes cutting the base substrate 100.
[0060] According to a substrate processing method according to an embodiment of the present disclosure, on a substrate (see Figure 3 After forming the first film 210 and the second film 220 on a mother substrate (e.g., a mother glass), the substrate (see Figure 3'10') can be divided into small units so that the defect rate of a plurality of first substrates 10a or second substrates 10b to be used in electronic devices and electronic equipment can be minimized, thereby shortening the manufacturing time.
[0061] In the following, reference will be made to Figures 3 to 14 Describe in more detail Figure 2 In this case, Figures 3 to 14 Plan views and cross-sectional views relate to a substrate processing method according to one embodiment of the present disclosure.
[0062] Figure 3 is a cross-sectional view of a substrate processing method according to one embodiment of the present disclosure. In this case, Figure 3 It is a specific example Figure 2 sectional view of the first step S110.
[0063] First, if Figure 3 As shown, a substrate 10 may be prepared. The substrate 10 may include a base substrate 100, a first film 210 located on one surface of the base substrate 100, and a second film 220 located on the other surface of the substrate 100. In this case, the first film 210 and the second film 220 may be attached to one surface and the other surface of the base substrate 100, respectively.
[0064] The base substrate 100 may include, for example, glass, but is not limited thereto. The base substrate 100 may be, for example, a mother substrate (mother glass), but is not limited thereto.
[0065] The first film 210 and the second film 220 may include the same material. Each of the first film 210 and the second film 220 may be formed on the base substrate 100 with a thickness of 2 μm or more and 300 μm or less. In this case, the thickness of each of the first film 210 and the second film 220 indicates the shortest distance from the lower surface to the upper surface of each of the first film 210 and the second film 220. For example, the thickness of each of the first film 210 and the second film 220 indicates the shortest distance from the surface relatively close to the base substrate 100 to the surface relatively far from the base substrate 100.
[0066] Figure 4 is a cross-sectional view of a substrate processing method according to one embodiment of the present disclosure. In this case, Figure 4 It is a specific example Figure 2 The cross-sectional view of the second step S120 and the third step S130. Figure 4 As shown, a first laser irradiator 300 is positioned on a surface (eg, a substrate (see Figure 3After the first laser 310 is irradiated onto the upper surface of the first film 210, a portion of the first film 210 may be removed. In this case, the first laser 310 may be adjusted to an appropriate intensity to remove only a portion of the first film 210 without damaging the base substrate 100.
[0067] When a portion of the first film 210 is removed by the first laser 310 , a first portion 210 a and a second portion 210 b of the first film 210 may be formed on the base substrate 100 , and a first opening OP1 may be formed between the first portion 210 a and the second portion 210 b by removing a portion of the first film 210 .
[0068] In the portion where the first opening OP1 is formed by irradiating the first laser 310, one side (e.g., the right side) of the first portion 210a may be formed in a tapered shape at a predetermined angle, and one side (e.g., the left side) of the second portion 210b may be formed in a tapered shape at a predetermined angle, but is not limited thereto. One side of the first portion 210a and the second portion 210b may be formed at an angle of 90°.
[0069] According to one embodiment of the present disclosure, the first opening OP1 formed by irradiating the first laser 310 may expose one surface of the base substrate 100 where the first film 210 is formed, for example, a portion of the upper surface of the base substrate 100 .
[0070] In addition, although not shown in detail in the figure, the first laser 310 may be irradiated on the substrate (see Figure 3 In this case, in order to irradiate the first laser 310 onto the substrate (see Figure 3 On the other surface of "10"), the substrate can be flipped (see Figure 3 "10"), so that the substrate (see Figure 3 The other surface of the substrate (see Figure 3 After the other surface of the substrate 10 faces the first laser irradiator 300, the first laser 310 can be irradiated onto the substrate (see Figure 3 The first laser 310 may be irradiated onto the upper surface of the second film 220 to remove a portion of the second film 220. In this case, the first laser 310 may be adjusted to an appropriate intensity to remove only a portion of the second film 220 without damaging the base substrate 100.
[0071] When a portion of the second film 220 is removed by the first laser 310, a third portion 220a of the second film 220 and a fourth portion 220b of the second film 220 may be formed on the base substrate 100, and a second opening OP2 may be formed between the third portion 220a and the fourth portion 220b by removing a portion of the second film 220.
[0072] In the portion where the second opening OP2 is formed by irradiating the first laser 310, one side (e.g., the right side) of the third portion 220a may be formed into a tapered shape at a predetermined angle, and one side (e.g., the left side) of the fourth portion 220b may be formed into a tapered shape at a predetermined angle, but are not limited thereto. One side of the third portion 220a and the fourth portion 220b may be formed at an angle of 90°.
[0073] According to one embodiment of the present disclosure, the second opening OP2 formed by irradiating the first laser 310 may expose the other surface of the base substrate 100 (eg, a portion of the lower surface of the base substrate 100 ) where the second film 220 is formed to the outside.
[0074] According to an embodiment of the present disclosure, the first opening OP1 and the second opening OP2 may overlap with the base substrate 100 interposed therebetween. Therefore, the base substrate 100 exposed through the first opening OP1 and the second opening OP2 may be cut, which will be described in more detail later.
[0075] Each of the first portion 210a of the first film 210, the second portion 210b of the first film 210, the third portion 220a of the second film 220, and the fourth portion 220b of the second film 220 may have a first height H from the upper surface or the lower surface of the substrate 100, and a first width W may be formed between the first portion 210a and the second portion 210b or between the third portion 220a and the fourth portion 220b.
[0076] For example, the first height H may be formed to a length greater than or equal to 2 μm and less than or equal to 300 μm, and the first width W may be greater than the first height H. For example, the first width W may be 10 μm or greater and 1000 μm or less. However, the first height H and the first width W are not limited thereto and may be formed to various lengths according to the design of those skilled in the art.
[0077] Figure 5a is a plan view of a substrate processing method according to one embodiment of the present disclosure. In this case, Figure 5a Illustrated Figure 2 The second step (see Figure 2 "S120") and Figure 2 The third step (see Figure 2"S130"), and Figure 5a Briefly illustrates the Figure 4 In the embodiment of the present invention, the first opening (or the second opening) is formed by removing a portion of the first film (or the second film). Therefore, the same reference numerals are given to the same configuration, and repeated descriptions will be omitted.
[0078] like Figure 5a As shown, according to one embodiment of the present disclosure, the substrate 10 may be fixed, and the first laser irradiator 300 may move along the first direction X on the substrate 10 while applying the first laser (see Figure 4 '310') is irradiated on the upper surface of the first film 210. As described above, since the first laser (see Figure 4 The first laser irradiator 300 (shown as “310”) moves along the upper surface of the first film 210, so that a portion of the first film 210 can be removed and a first opening OP1 extending along the first direction X can be formed along the moving direction of the first laser irradiator 300.
[0079] When forming the first opening OP1, the first portion 210a of the first film 210 may be disposed on one side of the first opening OP1 (e.g., on the left side of the first opening OP1), and the second portion 210b of the first film 210 may be disposed on the other side of the first opening OP1 (e.g., on the right side of the first opening OP1). In addition, a portion of the base substrate 100 may be exposed to the outside through the first opening OP1.
[0080] Figure 5b is a plan view of a substrate processing method according to another embodiment of the present disclosure. In this case, Figure 5b Illustrated Figure 2 The second step (see Figure 2 "S120") and Figure 2 The third step (see Figure 2 "S130"), and Figure 5b Briefly illustrates the Figure 4 In the embodiment of the present invention, the first opening (or the second opening) is formed by removing a portion of the first film (or the second film). Therefore, the same reference numerals are given to the same configuration, and repeated descriptions will be omitted.
[0081] like Figure 5b As shown, according to another embodiment of the present disclosure, Figure 5a Differently, the first laser irradiator 300 may be fixed, and when the substrate 10 moves along the first direction X below the first laser irradiator 300, the first laser (see Figure 4310 ) can be irradiated onto the upper surface of the first film 210. As described above, since the substrate 10 moves along the first direction X under the first laser irradiator 300 to irradiate the first laser (see Figure 4 ' 310 '), a portion of the first film 210 may be removed, and a first opening OP1 extending in the first direction X may be formed along the moving direction of the first laser irradiator 300 .
[0082] When forming the first opening OP1, the first portion 210a of the first film 210 may be disposed on one side of the first opening OP1 (e.g., on the left side of the first opening OP1), and the second portion 210b of the first film 210 may be disposed on the other side of the first opening OP1 (e.g., on the right side of the first opening OP1). In addition, a portion of the base substrate 100 may be exposed to the outside through the first opening OP1.
[0083] In addition, although not Figure 5a and Figure 5b , but the process of removing a portion of the second film 220 may be performed in the same manner as the process of removing a portion of the first film 210. However, as described above with reference to Figure 4 As described, in order to remove a portion of the second film 220 , the following step may be further included: turning over the substrate 100 so that the other surface of the substrate 100 (eg, the lower surface of the substrate 100 ) on which the second film 220 is formed faces the first laser irradiator 300 .
[0084] Figure 6 is a plan view of a substrate processing method according to one embodiment of the present disclosure. In this case, Figure 6 Illustrated Figure 2 The second step (see Figure 2 "S120") and Figure 2 The third step (see Figure 2 "S130"), and Figure 6 Briefly illustrates the Figure 4 In the embodiment of the present invention, the first opening (or the second opening) is formed by removing a portion of the first film (or the second film). Therefore, the same reference numerals are given to the same configuration, and repeated descriptions will be omitted.
[0085] The first laser irradiator 300 may move along the first direction (X direction) while projecting the first laser (see Figure 5a In this case, the first laser irradiator 300 repeatedly performs the operation of stopping at a predetermined position to irradiate the first laser (see Figure 5a ” 310 ) and moving again along the first direction X, thereby forming the first opening OP1 in the first film 210 .
[0086] In detail, such as Figure 6 As shown, the first laser irradiator 300 stops at a position corresponding to the first position C1 and irradiates the first laser in a spot shape (see Figure 5a '310'), thereby forming a first laser pattern S1.
[0087] The first laser pattern S1 may include a plurality of light spots R11, R12, ..., R1n formed along concentric circles in a clockwise direction relative to the first position C1. The plurality of light spots R11, R12, ..., R1n may contact each other, but is not limited thereto. The plurality of light spots R11, R12, ..., R1n may overlap each other. Furthermore, the plurality of light spots R11, R12, ..., R1n may be formed along concentric circles in a counterclockwise direction relative to the first position C1.
[0088] After forming the first laser pattern S1, the first laser irradiator 300 stops at a position corresponding to the second position C2 spaced apart from the first position C1 in the first direction X, and irradiates the first laser in a spot shape (see Figure 5a '310'), thereby forming a second laser pattern S2.
[0089] The second laser pattern S2 may include a plurality of light spots R21, R22, ..., R2n formed in a clockwise direction along concentric circles relative to the second position C2. In this case, the plurality of light spots R21, R22, ..., R2n may contact each other, but is not limited thereto. The plurality of light spots R21, R22, ..., R2n may overlap each other. In addition, the plurality of light spots R21, R22, ..., R2n may be formed in a counterclockwise direction along concentric circles relative to the second position C2.
[0090] As described above, since the first and second laser patterns S1 and S2 overlap, portions of the first film 210 irradiated by the first and second laser patterns S1 and S2 may be removed, thereby forming the first opening OP1.
[0091] After forming the second laser pattern S2, the first laser irradiator 300 may form the first laser pattern S1 or the same pattern as the first laser pattern and remove the unremoved portion 210c of the first film 210 while moving in the first direction X, whereby the first opening OP1 may extend in the first direction X.
[0092] also, Figure 6 Mainly illustrates Figure 5a Implementation methods, but not limited to this. Figure 6 The implementation method can be Figure 5bThe same method of implementation is also applied when the substrate (see Figure 5b "10") in the first laser irradiator (see Figure 5b The situation when moving in a fixed state ("300").
[0093] Figure 7 is a plan view of a substrate processing method according to another embodiment of the present disclosure. In this case, Figure 7 Illustrated Figure 2 The second step (see Figure 2 "S120") and Figure 2 The third step (see Figure 2 "S130"), and Figure 7 More specifically, Figure 4 Another embodiment of forming the first opening (or second opening) by removing a portion of the first film (or second film) in the embodiment of FIG. Therefore, the same reference numerals are given to the same configuration, and repeated descriptions will be omitted.
[0094] The first laser irradiator 300 may move along the first direction X while projecting the first laser (see Figure 5a ”310”) is irradiated on the first film 210. In this case, the first laser irradiator (see Figure 5a ”300”) can irradiate the first laser while moving at a constant speed along the first direction X (see Figure 5a ' 310 '), whereby a first opening OP1 may be formed in the first film 210 .
[0095] Specifically, if Figure 7 As shown, the first laser irradiator 300 can irradiate the first laser in a spot shape while moving at a constant speed along the first direction X (see Figure 5a '310'), thereby forming a third laser pattern S3.
[0096] The third laser pattern S3 may include a plurality of light spots R31, R32, ..., R3n formed along a spiral shape relative to the axis of the first direction X, wherein the plurality of light spots R31, R32, ..., R3n may contact each other, but is not limited thereto. The plurality of light spots R31, R32, ..., R3n may overlap each other.
[0097] The third laser pattern S3 may extend as the first laser irradiator 300 moves along the first direction X, thereby removing a portion of the first film 210, and the removed portion of the first film 210 may be the first opening OP1. In addition, as the third laser pattern S3 extends along the first direction X, the unremoved portion 210c of the first film 210 may be removed, so that the first opening OP1 may extend along the first direction X.
[0098] also, Figure 7 Mainly illustrates Figure 5a Implementation methods, but not limited to this. Figure 7 The implementation method can be Figure 5b The same method of implementation is also applied when the substrate (see Figure 5b "10") in the first laser irradiator (see Figure 5b The situation when moving in a fixed state ("300").
[0099] Figure 8 is a plan view of a substrate processing method according to another embodiment of the present disclosure. In this case, Figure 8 Illustrated Figure 2 The second step (see Figure 2 "S120") and Figure 2 The third step (see Figure 2 "S130"), and Figure 8 More specifically, Figure 4 Another embodiment of forming the first opening (or second opening) by removing a portion of the first film (or second film) in the embodiment of FIG. Therefore, the same reference numerals are given to the same configuration, and repeated descriptions will be omitted.
[0100] The first laser irradiator 300 may move along the first direction X while projecting the first laser (see Figure 5a In this case, the first laser irradiator 300 repeatedly performs the operation of stopping at a predetermined position to irradiate the first laser (see Figure 5a ” 310 ) and moving again along the first direction X, thereby forming the first opening OP1 in the first film 210 .
[0101] In detail, such as Figure 8 As shown, the first laser irradiator 300 stops at a position corresponding to the first position C1 and irradiates the first laser in a ring shape (or annular shape) (see Figure 5a '310'), thereby forming a fourth laser pattern S4.
[0102] The fourth laser pattern S4 may be irradiated in a ring shape along concentric circles with respect to the first position C1 .
[0103] After forming the fourth laser pattern S4, the first laser irradiator 300 stops at a position corresponding to the second position C2 spaced apart from the first position C1 along the first direction X, and irradiates the first laser in a ring shape (or annular shape) (see FIG. Figure 5a '310'), thereby forming a fifth laser pattern S5.
[0104] The fifth laser pattern S5 may be irradiated in a ring shape along concentric circles with respect to the second position C2 .
[0105] The fourth laser pattern S4 and the fifth laser pattern S5 may overlap each other. Since the fourth laser pattern S4 and the fifth laser pattern S5 overlap each other, the first opening OP1 may be formed by removing a portion of the first film 210 irradiated by the fourth laser pattern S4 and the fifth laser pattern S5.
[0106] After forming the fifth laser pattern S5, the first laser irradiator 300 may form the same pattern as the fourth laser pattern S4 or the fifth laser pattern S5, and may remove the unremoved portion 210c of the first film 210 while moving along the first direction X, whereby the first opening OP1 may extend along the first direction X.
[0107] also, Figure 8 Mainly illustrates Figure 5a Implementation methods, but not limited to this. Figure 8 The implementation method can be Figure 5b The same method of implementation is also applied when the substrate (see Figure 5b "10") in the first laser irradiator (see Figure 5b The situation when moving in a fixed state ("300").
[0108] Figure 9 is a cross-sectional view of a substrate processing method according to one embodiment of the present disclosure. In this case, Figure 9 Involved Figure 2 The fourth step (see Figure 2 "S140").
[0109] like Figure 9 As shown, according to Figure 2 The second and third steps (see Figure 2 After forming the first opening OP1 and the second opening OP2 in the first film 210 and the second film 220 , respectively ( S120 ) and “ S130 ”, the second laser irradiator 400 may be positioned to correspond to the portion where the first opening OP1 is formed.
[0110] The second laser irradiator 400 includes a second laser module 420 for irradiating the second laser 410 and a lens 430 for adjusting a moving path of the second laser 410 .
[0111] The second laser 410 irradiated from the second laser module 420 may be separated into a first sub-laser 410a and a second sub-laser 410b while passing through the lens 430. The first sub-laser 410a may be irradiated to the first opening OP1 along the fourth direction, and the second sub-laser 410b may be irradiated to the first opening OP1 along a fifth direction different from the fourth direction. Specifically, the first sub-laser 410a may be irradiated to one side of the second laser irradiator 400 (e.g., a portion forming the first opening OP1 on the left side), and the second sub-laser 410b may be irradiated to the other side of the second laser irradiator 400 (e.g., a portion forming the first opening OP1 on the right side).
[0112] The first and second sub-lasers 410a and 410b may cross each other in the base substrate 100, thereby forming a plurality of holes 500 extending along the second direction Z in the base substrate 100. The plurality of holes 500 may penetrate the base substrate 100. The first and second openings OP1 and OP2 may be connected to each other through the plurality of holes 500.
[0113] According to one embodiment of the present disclosure, since the first portion 210 a of the first film 210 and the second portion 210 b of the first film 210 are spaced apart from each other by a predetermined distance using the first opening OP1, the first portion 210 a of the first film 210 and the second portion 210 b of the first film 210 may not be damaged by the first sub-laser 410 a and the second sub-laser 410 b.
[0114] Figure 10 is a plan view of a substrate processing method according to one embodiment of the present disclosure. In this case, Figure 10 Illustrated Figure 2 The fourth step (see Figure 2 ” S140 ” of FIG. 1 , and schematically illustrates the Figure 9 Therefore, the same reference numerals are assigned to the same configurations, and repeated descriptions will be omitted.
[0115] like Figure 10 As shown, the second laser irradiator 400 can irradiate the second laser while moving along the first direction X (see Figure 9 In this case, the second laser beam (see Figure 9 "410") forms a plurality of holes 500 along the first direction X.
[0116] According to one embodiment of the present disclosure, Figure 10As shown in the enlarged view, the plurality of holes 500 may include a first hole 501, a second hole 502, and a third hole 503 formed adjacent to each other, and the first hole 501 to the third hole 503 may be formed to have the same diameter "d", and the first hole 501 and the second hole 502 or the second hole 502 and the third hole 503 may be spaced apart from each other by a first distance "p".
[0117] In this case, the diameter “d” of any one of the plurality of holes 500 may be smaller than the first distance “p.” Therefore, the plurality of holes 500 do not overlap with each other, thereby minimizing damage to the base substrate 100 .
[0118] Figure 11 is a cross-sectional view of a substrate processing method according to one embodiment of the present disclosure. In this case, Figure 11 It is a specific example Figure 2 The fifth step (see Figure 2 A cross-sectional view of "S150").
[0119] like Figure 11 As shown, according to Figure 2 The fourth step (see Figure 2 After forming the plurality of holes 500 in the base substrate 100 (“ S140 ”), the third laser irradiator 600 may be positioned to correspond to a portion where the plurality of holes 500 are formed.
[0120] The third laser irradiator 600 may irradiate the third laser 610 to overlap the plurality of holes 500. In this case, the third laser 610 may be irradiated to the first opening OP1 in a size such that the first portion 210a of the first film 210 and the second portion 210b of the first film 210 are not damaged. That is, the size of the third laser 610 irradiated to the upper surface of the base substrate 100 may be smaller than the width of the first opening OP1. In this case, the width of the first opening OP1 may be defined as the shortest distance from one end of the first portion 210a of the first film 210 (e.g., from the right end of the first portion 210a) to one end of the second portion 210b of the first film 210 (e.g., to the left end of the second portion 210b).
[0121] The third laser 610 may be irradiated to portions corresponding to the plurality of holes 500, thereby increasing the temperature of a portion of the upper surface of the base substrate 100 exposed through the first opening OP1, and the temperature may be increased in a radial shape 610a from the upper surface of the base substrate 100 to the inside of the base substrate 100, but is not limited thereto.
[0122] also, Figure 11The third laser irradiator 600 is illustrated as being positioned at the first opening OP1 and irradiating the third laser 610 , but is not limited thereto. The third laser irradiator 600 may be positioned at the second opening OP2 and irradiate the third laser 610 .
[0123] Figure 12 is a plan view of a substrate processing method according to one embodiment of the present disclosure. In this case, Figure 12 Illustrated Figure 2 The fifth step (see Figure 2 "S150"), and Figure 12 Specifically exemplified in Figure 11 Therefore, the same reference numerals are given to the same configurations, and repeated descriptions will be omitted.
[0124] like Figure 12 As shown, the third laser irradiator 600 can irradiate the third laser while moving along the first direction X (see Figure 11 of “610”).
[0125] As the third laser irradiator 600 moves along the first direction X, the third laser (see Figure 11 The light beams 610) may be irradiated onto the upper surface of the base substrate 100 exposed through the first opening OP1 in the form of a plurality of light beams 611a and 611b. The plurality of light beams 611a and 611b may overlap with the plurality of holes 500. Therefore, the temperature in the peripheral portion of the plurality of holes 500 may be increased.
[0126] The plurality of light beams 611 a and 611 b may overlap with each other while having a circular light spot.
[0127] Figure 13 is a plan view of a substrate processing method according to one embodiment of the present disclosure. In this case, Figure 13 Illustrated Figure 2 The fifth step (see Figure 2 "S150"), and Figure 13 Specifically exemplified in Figure 11 Therefore, the same reference numerals are assigned to the same configurations, and repeated descriptions will be omitted.
[0128] like Figure 13 As shown, the third laser irradiator 600 can irradiate the third laser while moving along the first direction X (see Figure 11 of “610”).
[0129] As the third laser irradiator 600 moves along the first direction X, the third laser (see Figure 11 The light beams 610) may be irradiated onto the upper surface of the base substrate 100 exposed through the first opening OP1 in the form of a plurality of light beams 611a and 611b. The plurality of light beams 611a and 611b may overlap with the plurality of holes 500. Therefore, the temperature in the peripheral portion of the plurality of holes 500 may be increased.
[0130] The plurality of light beams 611 a and 611 b may overlap with each other while having an elliptical spot shape.
[0131] Figure 14 is a cross-sectional view of a substrate processing method according to one embodiment of the present disclosure. In this case, Figure 14 It is a specific example Figure 2 The sixth step (see Figure 2 A cross-sectional view of "S160").
[0132] like Figure 14 As shown, according to Figure 2 The fifth step (see Figure 2 "S150"), the third laser (see Figure 11 "610") is irradiated to a surface having multiple holes (see Figure 11 After forming the base substrate 100 (“500”), the base substrate 100 may be separated to form the first substrate 10a and the second substrate 10b.
[0133] According to one embodiment of the present disclosure, in order to cut the base substrate 100, for example, the base substrate 100 may be cooled. Figure 2 The fifth step (see Figure 2 In "S150" of FIG. 1 , a third laser (see FIG. Figure 11 '310') irradiates a portion of the base substrate 100 relative to the plurality of holes (see Figure 11 In this case, when the base substrate 100 is cooled, the base substrate 100 may be cooled along the plurality of holes (see Figure 11 '500') is cut into a first base substrate 100a and a second base substrate 100b.
[0134] The base substrate 100 may be cooled by using air at room temperature or lower, and more specifically, by using air at a temperature of 0° C. or higher to 25° C. or lower. However, the present disclosure is not limited thereto, and the base substrate 100 may be cooled by using another medium having a temperature lower than or equal to room temperature.
[0135] The substrate 10 (see Figure 3The substrate 10a may be divided into a first substrate 10a and a second substrate 10b. In this case, the first substrate 10a includes a first base substrate 100a, a first portion 210a of the first film 210, and a third portion 220a of the second film 220, and the second substrate 10b includes a second base substrate 100b, a second portion 210b of the first film 210, and a fourth portion 220b of the second film 220.
[0136] The first portion 210a of the first film 210 may be disposed on one surface of the first base substrate 100a (e.g., the upper surface of the first base substrate 100a), and the third portion 220a of the second film 220 may be disposed on the other surface of the first base substrate 100a (e.g., the lower surface of the first base substrate 100a). Similarly, the second portion 210b of the first film 210 may be disposed on one surface of the second base substrate 100b (e.g., the upper surface of the second base substrate 100b), and the fourth portion 220b of the second film 220 may be disposed on the other surface of the second base substrate 100b (e.g., the lower surface of the second base substrate 100b).
[0137] In this case, a portion of the upper surface of the first base substrate 100a disposed in the first substrate 10a is not covered by the first portion 210a of the first film 210, and a portion of the lower surface of the first base substrate 100a disposed in the first substrate 10a is not covered by the third portion 220a of the second film 220. In addition, a portion of the upper surface of the second base substrate 100b disposed in the second substrate 10b is not covered by the second portion 210b of the first film 210, and a portion of the lower surface of the second base substrate 100b disposed in the second substrate 10b is not covered by the fourth portion 220b of the second film 220.
[0138] Although the embodiments of the present disclosure have been described in more detail with reference to the accompanying drawings, the present disclosure is not necessarily limited to the embodiments, and various modifications may be made without departing from the spirit and scope of the present disclosure. Therefore, the embodiments disclosed in the present disclosure are intended to illustrate the scope of the technical concept of the present disclosure, and the scope of the technical concept of the present disclosure is not limited by the embodiments. Therefore, it should be understood that the above-mentioned embodiments are exemplary and not limiting in all aspects. The scope of the present disclosure should be interpreted based on the claims, and all technical concepts within the scope equivalent to the claims should be interpreted as being included within the scope of the present disclosure.
Claims
1. A substrate processing method, comprising the following steps: preparing a substrate having a first insulating layer on one surface thereof; exposing one surface of the substrate by irradiating the first insulating layer with a first laser beam; forming a plurality of holes through the substrate by irradiating a second laser beam onto an exposed surface of the substrate; irradiating a third laser beam onto one surface of the substrate to overlap with the plurality of holes; and The substrate is cut.
2. The substrate processing method according to claim 1, in, The step of cutting the substrate includes exposing a portion of the upper surface of the substrate without being covered by the first insulating layer.
3. The substrate processing method according to claim 1, in, The first laser beam is irradiated to form a first laser pattern and a second laser pattern, the first laser pattern including a plurality of light spots arranged along concentric circles relative to a first position, the second laser pattern including a plurality of light spots arranged along concentric circles relative to a second position spaced apart from the first position along a first direction, and the first laser pattern and the second laser pattern overlapping each other.
4. The substrate processing method according to claim 1, in, The first laser beam is irradiated to form a first annular laser pattern and a second annular laser pattern, wherein the first laser pattern is arranged along a concentric circle relative to a first position, the second laser pattern is arranged along a concentric circle relative to a second position spaced apart from the first position in a first direction, and the first laser pattern and the second laser pattern overlap each other.
5. The substrate processing method according to claim 1, in, The first laser beam is irradiated to form a spiral laser pattern including a plurality of light spots extending along a first direction.
6. The substrate processing method according to claim 3 or 5, in, The plurality of light spots overlap or contact each other.
7. The substrate processing method according to claim 3 or 4, further comprising the following steps: After forming the first laser pattern, and before forming the second laser pattern, the substrate is moved or the laser irradiator for irradiating the first laser beam is moved.
8. The substrate processing method according to claim 1, in, The second laser beam includes a first sub-laser beam irradiated in a first direction and a second sub-laser beam irradiated in a second direction, and The first sub laser beam and the second sub laser beam cross each other in the substrate.
9. The substrate processing method according to claim 1, in, The plurality of holes include a first hole having a first diameter and a second hole disposed adjacent to the first hole and having the first diameter, and A first distance between the first hole and the second hole is greater than the first diameter in each hole of the plurality of holes.
10. The substrate processing method according to claim 1, in, The step of exposing one surface of the substrate includes forming a first portion and a second portion of the first insulating layer spaced apart from each other relative to the plurality of holes, and The first sub laser beam and the second sub laser beam are irradiated to a space between the first portion and the second portion of the first insulating layer without contacting the first portion and the second portion of the first insulating layer.
11. A substrate processing method, comprising the following steps: preparing a substrate having a first film on one surface of the substrate; exposing a surface of the substrate by removing a portion of the first film; forming a plurality of holes through the substrate on an exposed surface of the substrate; irradiating a third laser beam onto one surface of the substrate to overlap the plurality of holes; as well as The substrate is cut.
12. The substrate processing method according to claim 11, in, The third laser beam is irradiated to form a plurality of laser patterns that overlap with each other and are configured to have a circular spot.
13. The substrate processing method according to claim 11, in, The third laser beam is irradiated to form a plurality of laser patterns that overlap with each other and are configured to have an elliptical spot.
14. The substrate processing method according to claim 11, in, The step of cutting the substrate includes cooling the substrate irradiated with the third laser beam.
15. The substrate processing method according to claim 14, in, The step of cooling the substrate uses air at room temperature or lower.
16. The substrate processing method according to claim 11, in, A first portion of the first film disposed on one side relative to the plurality of holes and a second portion of the first film disposed on the other side relative to the plurality of holes are disposed on one surface of the substrate, and The plurality of holes are exposed to the outside through a groove between the first portion and the second portion of the first film.
17. The substrate processing method according to claim 16, in, A size of the third laser beam is smaller than a width between the first portion and the second portion of the first film.
18. The substrate processing method according to claim 11, in, The plurality of holes are arranged along a straight line extending in a first direction.