Electronic-grade hafnium oxide as well as preparation method and application thereof
Through the chlorination reaction, molten salt purification, hydrogenation purification and sublimation furnace oxidation process combined with AlCl3 catalyst, the problem of existing hafnium oxide preparation is difficult to achieve electronic grade ultra-high purity, and high-efficiency hafnium oxide preparation is achieved to meet the needs of the semiconductor chip industry.
CN120483248APending Publication Date: 2025-08-15SICHUAN JINGHE NEW MATERIALS TECHNOLOGY CO LTD
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Patent Information
- Application Number
- CN202510673163.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-23
- Publication Date
- 2025-08-15
AI Technical Summary
Technical Problem
The existing hafnium oxide preparation process is difficult to achieve electronic-grade ultra-high purity, which limits its application in the semiconductor chip industry.
Method used
The chlorination reaction, molten salt purification, hydrogenation purification and sublimation furnace oxidation technology are used, combined with the AlCl3 gas-phase catalyst, and electron-grade hafnium oxide is prepared by controlling the temperature and catalytic action.
Benefits of technology
The preparation of ultra-high purity hafnium oxide is achieved, which improves production efficiency, reduces costs, and ensures product uniformity and purity.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention discloses electronic-grade hafnium oxide and a preparation method and application thereof, and relates to the technical field of high-dielectric-constant materials, and the preparation method comprises the following steps: carrying out chlorination reaction on crushed coarse hafnium oxide and graphite powder to prepare coarse hafnium tetrachloride; purifying the crude hafnium tetrachloride by adopting a molten salt purification method and / or a hydrogenation purification method to prepare high-purity hafnium tetrachloride; the method comprises the following steps: introducing high-purity hafnium tetrachloride into a sublimation furnace, introducing oxygen and an AlCl3 gas-phase catalyst into the sublimation furnace, and oxidizing the high-purity hafnium tetrachloride into hafnium oxide particles and chlorine; and dechlorinating the hafnium oxide particles through a fluidized bed to obtain the electronic-grade hafnium oxide. The hafnium oxide prepared by the preparation method not only has electronic-grade ultra-high purity, but also overcomes various defects of synthesis by using hafnium tetrachloride water; and the technological process is simple, the production efficiency is high, and the production cost is low.
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