Chemical vapor deposition machine and maintenance method of chemical vapor deposition machine

Abstract

The invention relates to a chemical vapor deposition machine table and a maintenance method thereof, and the chemical vapor deposition machine table comprises a process circulating water unit which comprises at least a plurality of pipelines, and different pipelines are connected with different modules; the connector assembly is located between the pipeline and the corresponding module to achieve waterway communication, the connector assembly comprises a first connector and a second connector, the first connector is located at the tail end of the pipeline, when the first connector and the second connector are separated, the pipeline is closed, and when the second connector is separated, the pipeline is opened. And the second joint is positioned on the corresponding module. When one pipeline in the process circulating water unit is separated from the corresponding module, the first connector and the second connector corresponding to the pipeline are separated, process circulating water cannot flow out of the pipeline, communication between other pipelines and the corresponding module cannot be affected, cooling of the process circulating water to other modules cannot be affected, and the cooling efficiency of the process circulating water is improved. And the downtime of the chemical vapor deposition machine can be effectively shortened.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to a chemical vapor deposition machine and a maintenance method for the chemical vapor deposition machine. Background Art

[0002] A Chemical Vapor Deposition (CVD) machine is a device used to prepare materials and coatings. It heats and decomposes gaseous chemicals, causing the resulting reactants to deposit on the surface of a substrate, forming a material film or coating.

[0003] Remote plasma sources are primarily used for atomic-level cleaning of semiconductor equipment process chambers. In chemical vapor deposition systems, especially after the process is complete, thin films or impurities may form on the walls of the chemical vapor deposition reaction chamber, the surface of the shower plate, the bottom of the heating plate, and other areas. Using a remote plasma source can effectively remove these deposits, avoiding unnecessary contamination, improving production efficiency, and providing a clean reaction environment for subsequent deposition processes, which helps improve film quality and process stability. Chemical vapor deposition processes typically operate under high temperature conditions, and the primary function of cooling circulating water is to cool the equipment in the system to prevent damage.

[0004] However, current chemical vapor deposition equipment still has shortcomings. Summary of the Invention

[0005] The problem solved by the present invention is how to improve a chemical vapor deposition machine to reduce the possibility of unexpected shutdown and shorten the downtime of a reaction chamber of the chemical vapor deposition machine.

[0006] In order to solve the above problems, the technical solution of the present invention provides a chemical vapor deposition machine, including: a process circulating water unit, the process circulating water unit including: at least 2 pipelines, different pipelines connecting different modules; a joint assembly, the joint assembly is located between the pipeline and the corresponding module to achieve water communication, wherein the joint assembly includes: a first joint and a second joint, the first joint is located at the end of the pipeline, when the first joint and the second joint are separated, the pipeline is blocked, and the second joint is located in the corresponding module.

[0007] Optionally, the first connector and the second connector are connected by plugging.

[0008] Optionally, it further includes: a remote plasma module, the remote plasma module including: a first cooling water pipeline; the joint assembly connects the pipeline of the process circulating water unit and the first cooling water pipeline of the remote plasma module.

[0009] Optionally, the remote plasma module includes: a remote plasma source and a power supply; and the first cooling water pipeline is suitable for cooling at least one of the remote plasma source and the power supply.

[0010] Optionally, it also includes: a pump unit module, the pump unit module includes: a second cooling water pipeline, the second cooling water pipeline is suitable for cooling the pump unit module; the joint assembly connects the pipeline of the process circulating water unit and the second cooling water pipeline of the pump unit module.

[0011] Optionally, the process circulating water unit includes: a main water supply valve, which is suitable for being connected to the at least two pipelines, and is suitable for controlling the on-off of the process circulating water in the at least two pipelines.

[0012] Correspondingly, the technical solution of the present invention also provides a maintenance method for a chemical vapor deposition machine. The chemical vapor deposition machine is as described in any of the above items. The maintenance method of the chemical vapor deposition machine includes: opening the main water supply valve of the process circulating water unit while separating the first connector and the second connector of the connector assembly.

[0013] Optionally, the step of separating the first joint and the second joint of the joint assembly includes: separating the first joint and the second joint of the joint assembly between the remote plasma module and the corresponding pipeline in the chemical vapor deposition machine; the maintenance method also includes: replacing at least one of the remote plasma source and the power supply.

[0014] Optionally, it also includes: separating the first joint and the second joint of the joint assembly between the remote plasma module and the corresponding pipeline, and combining the first joint and the second joint of the joint assembly between the pump unit module in the chemical vapor deposition machine and the corresponding pipeline.

[0015] Optionally, the step of separating the first joint and the second joint of the joint assembly further includes: separating the first joint and the second joint of the joint assembly during deposition in the reaction chamber.

[0016] Compared with the prior art, the technical solution of the present invention has the following advantages:

[0017] In the chemical vapor deposition machine of the technical solution of the present invention, the connector assembly includes: a first connector and a second connector, the first connector is located at the end of the pipeline, and when the first connector and the second connector are separated, the pipeline is blocked, and the second connector is located in the corresponding module. When a pipeline in the process circulating water unit is separated from the corresponding module, the first connector and the second connector corresponding to the pipeline are separated, and the process circulating water will not flow out of the pipeline, will not affect the connection between other pipelines and the corresponding modules, will not affect the cooling of other modules by the process circulating water, and can effectively shorten the downtime of the chemical vapor deposition machine. In an optional solution of the present invention, the first connector and the second connector are connected by plugging and unplugging. The first connector and the second connector are connected by plugging and unplugging, so that the staff can easily complete the connection and disconnection between each pipeline and the corresponding module, thereby improving work efficiency.

[0018] In an optional solution of the present invention, the process circulating water unit includes: a main water supply valve, the main water supply valve is suitable for connecting to the at least two pipelines, and the main water supply valve is suitable for controlling the on-off of the process circulating water in the at least two pipelines. The chemical vapor deposition machine adopts the joint assembly. When a part of the at least two pipelines are separated from the modules corresponding to the pipelines, the pipelines and the corresponding modules can be separated by directly separating the first joint and the second joint corresponding to the pipelines. There is no need to close the main water supply valve and then remove the corresponding module. This avoids the chemical vapor deposition machine triggering the interlocking device when the process circulating water is stopped, causing the reaction chamber interlocked with the module to cool down, thereby avoiding increasing the machine downtime. In addition, the chemical vapor deposition machine adopts the joint assembly, so that the staff can easily complete the connection and disconnection between each pipeline and the corresponding module, thereby improving work efficiency.

[0019] In the maintenance method for a chemical vapor deposition machine according to the technical solution of the present invention, the first and second connectors of the connector assembly are separated while the main water supply valve of the process circulating water unit is opened. When a pipeline in the process circulating water unit is separated from the corresponding module, the first and second connectors corresponding to the pipeline do not need to be closed. This prevents the process circulating water from flowing out of the pipeline, thereby preventing the connection between other pipelines and the corresponding modules and preventing the cooling of other modules by the process circulating water. This effectively reduces the downtime of the chemical vapor deposition machine. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is a schematic diagram of a chemical vapor deposition machine;

[0021] Figure 2 for Figure 1An example diagram of the connection relationship of the process circulating water unit of the chemical vapor deposition machine;

[0022] Figure 3 is a schematic diagram of a chemical vapor deposition apparatus according to an embodiment of the present invention;

[0023] Figure 4 This Figure 3 An example diagram of the connection relationship of the process circulating water unit of the chemical vapor deposition machine;

[0024] Figure 5 is a schematic cross-sectional structural diagram of a first connector according to an embodiment of the present invention;

[0025] Figure 6 It is a schematic cross-sectional structural diagram of the second joint according to an embodiment of the present invention. DETAILED DESCRIPTION

[0026] As can be seen from the background technology, current chemical vapor deposition equipment still has problems. The reasons for these problems are analyzed below:

[0027] Please refer to Figure 1 and Figure 2 A chemical vapor deposition machine includes: a process circulating water unit, the process circulating water unit includes: at least two pipelines 100, different pipelines 100 are connected to different modules 101; a joint assembly 102, the joint assembly 102 is located between the pipeline 100 and the corresponding module 101 to achieve water communication.

[0028] Specifically, the process circulating water unit further includes: a water supply main valve 103 , which is suitable for connecting to the at least two pipelines 100 , and is suitable for controlling the on-off of the process circulating water in the at least two pipelines 100 .

[0029] Specifically, the module 101 includes a remote plasma module 104 and a pump unit module 105. The remote plasma module 104 includes a first cooling water pipeline (not shown). The connector assembly 102 connects the process circulating water unit pipeline 100 and the first cooling water pipeline of the remote plasma module 104. The main water supply valve 103 controls the flow of process circulating water in the first cooling water pipeline.

[0030] Under normal operation of the equipment, the remote plasma module 104 is used to clean the reaction chamber after the wafer undergoes chemical vapor deposition in the reaction chamber.

[0031] The pump unit module 105 includes a second cooling water pipeline (not shown). The connector assembly 102 connects the process circulating water unit pipeline 100 and the second cooling water pipeline of the pump unit module 105. The main water supply valve 103 controls the flow of process circulating water in the second cooling water pipeline.

[0032] The chemical vapor deposition process usually needs to be performed in a low-pressure vacuum environment. The pump unit module 105 continuously pumps out the gas in the reaction chamber to reduce the pressure in the reaction chamber, thereby achieving and maintaining the vacuum required by the process.

[0033] Specifically, the connector assembly 102 is a Swagelok connector assembly, which includes a first connector and a second connector, wherein the first connector is located at the end of the pipeline, the second connector is located at the corresponding module, and the second connector is connected to the first connector via a ferrule.

[0034] The remote plasma module 104 and the pump unit module 105 heat up over extended periods of operation, requiring process circulating water for cooling. Interlocks are installed between the reaction chamber and the remote plasma module 104 and the pump unit module 105, respectively. When the process circulating water is shut off, the chemical vapor deposition machine triggers the interlocks, causing the reaction chamber to cool down and unexpectedly shut down the machine.

[0035] The remote plasma module 104 includes a power supply and a remote plasma source. The power supply supplies power to the remote plasma source. As time goes by, the remote plasma source and the power supply will be damaged and need to be replaced with new ones. When a Swagelok connector assembly is used to connect the pipeline 100 and the corresponding module 101, it is necessary to disconnect the Swagelok connector assembly 102 from the corresponding module 101 when replacing the remote plasma source and the power supply. This process requires closing the main water supply valve 103. However, closing the main water supply valve 103 will cause the process circulating water to be stopped, and the chemical vapor deposition machine will trigger the interlock device, thereby causing the reaction chamber to cool down and increasing the downtime of the machine.

[0036] In order to solve the technical problem, the present invention provides a chemical vapor deposition machine, including: a process circulating water unit, the process circulating water unit including: at least 2 pipelines, different pipelines connecting different modules; a joint assembly, the joint assembly is located between the pipeline and the corresponding module to achieve water communication, wherein the joint assembly includes: a first joint and a second joint, the first joint is located at the end of the pipeline, and when the first joint and the second joint are separated, the pipeline is blocked, and the second joint is located in the corresponding module.

[0037] In the chemical vapor deposition machine of the technical solution of the present invention, when a pipeline in the process circulating water unit is separated from the corresponding module, the first joint and the second joint corresponding to the pipeline are separated, the process circulating water will not flow out of the pipeline, will not affect the connectivity between other pipelines and the corresponding modules, will not affect the cooling of other modules by the process circulating water, and can effectively shorten the downtime of the chemical vapor deposition machine.

[0038] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0039] Please refer to Figure 3 and Figure 4 The chemical vapor deposition machine includes: a process circulating water unit, and the process circulating water unit includes: at least two pipelines 200, and different pipelines 200 are connected to different modules 201.

[0040] The pipeline 200 of the process circulating water unit is connected to different modules 201 respectively. The process circulating water in the pipeline 200 exchanges heat with the heat-generating module 201 to take away excess heat, preventing the module 201 connected to the pipeline 200 from being damaged due to excessive temperature, and ensuring that each module 201 operates stably within an appropriate temperature range.

[0041] For example, in some embodiments of the present invention, please refer to Figure 4 The process circulating water unit includes two pipelines 200, and each pipeline 200 is connected to a different module 201.

[0042] In other embodiments, the process circulating water unit may further include other numbers of pipelines, each pipeline being connected to a different module.

[0043] The process circulating water unit includes a main water supply valve 202, which is adapted to be connected to the at least two pipelines 200 and to control the flow of process circulating water within the at least two pipelines 200. Specifically, in some embodiments of the present invention, the number of the main water supply valve 202 is one.

[0044] Please refer to Figure 3 and Figure 4 The chemical vapor deposition machine includes a connector assembly 203 located between the pipeline 200 and the corresponding module 201 to achieve waterway communication. The module 201 corresponding to the pipeline 200 is the module 201 connected to the pipeline 200.

[0045] The connector assembly 203 includes: a first connector 206 and a second connector 207. The first connector 206 is located at the end of the pipeline 200. When the first connector 206 and the second connector 207 are separated, the pipeline 200 is blocked. The second connector 207 is located in the corresponding module 201.

[0046] The chemical vapor deposition machine uses the connector assembly 203. When it is necessary to separate the pipeline 200 from the module 201 corresponding to the pipeline 200 to remove the corresponding module 201, the pipeline 200 and the corresponding module 201 can be separated by simply separating the first connector 206 and the second connector 207 corresponding to the pipeline 200. The connector assembly 203 can prevent the process circulating water from flowing out of the connector assembly 203. The use of the connector assembly 203 eliminates the need to close the main water supply valve 202 before removing the corresponding module 201, thereby preventing the chemical vapor deposition machine from triggering the interlock device when the process circulating water is stopped, causing the reaction chamber interlocked with the module 201 to cool down, thereby avoiding increased machine downtime. In addition, the chemical vapor deposition machine uses the connector assembly 203, allowing workers to easily complete the connection and disconnection between each pipeline 200 and the corresponding module 201, thereby improving work efficiency.

[0047] Specifically, in some embodiments of the present invention, the connector assembly 203 is a quick connector. The first connector 206 and the second connector 207 are connected by plugging and unplugging, so that workers can easily complete the connection and disconnection between each pipeline 200 and the corresponding module 201, thereby improving work efficiency; and the use of extremely low-overflow quick connectors can prevent medium overflow from causing damage or malfunction to nearby equipment and reduce the risk of unexpected shutdown of the chemical vapor deposition machine; in addition, the quick connector has a compact structure and occupies a small space, making it suitable for process circulating water units with limited space; the quick connector has a small pressure drop, and using a connector assembly 203 with as small a pressure drop as possible can reduce the energy consumption of the pump, thereby saving costs.

[0048] Please continue to refer to Figure 3 and Figure 4 The chemical vapor deposition machine also includes: a remote plasma module 204, and the remote plasma module 204 includes: a first cooling water pipeline (not marked); the joint assembly 203 connects the pipeline 200 of the process circulating water unit and the first cooling water pipeline of the remote plasma module 204.

[0049] Different pipelines 200 are connected to different modules 201 . Specifically, in some embodiments of the present invention, the module 201 includes a remote plasma module 204 . Among the at least two pipelines 200 of the process circulating water unit, one of the pipelines 200 is connected to the remote plasma module 204 .

[0050] The joint assembly 203 connects the pipeline 200 of the process circulating water unit and the first cooling water pipeline of the remote plasma module 204 , so that the process circulating water of the process circulating water unit cools down the remote plasma module 204 .

[0051] The remote plasma module 204 includes: a remote plasma source and a power supply; the first cooling water pipeline is suitable for cooling at least one of the remote plasma source and the power supply.

[0052] The power supply is suitable for providing sufficient energy to excite process gases (such as argon, oxygen, and nitrogen) into a plasma state. Through specific circuitry and control techniques, the power supply generates a high-frequency or radio-frequency electric field, which ionizes gas molecules in the electric field, forming a plasma containing active species such as ions, electrons, and free radicals.

[0053] The remote plasma source and the power supply generate heat when in operation and need to be cooled by process circulating water to ensure normal operation. The first cooling water pipeline cools down at least one of the remote plasma source and the power supply.

[0054] The remote plasma module 204 is suitable for cleaning the reaction chamber. During the chemical vapor deposition process, various deposits, such as unreacted precursors, reaction byproducts, and deposited thin film materials, will inevitably accumulate on the inner walls and component surfaces of the reaction chamber. The plasma generated by the remote plasma module 204 contains highly active ions and free radicals, which can chemically react with these deposits, converting them into volatile substances, which are then discharged from the chamber through the vacuum system, thereby effectively removing the deposits in the reaction chamber. By regularly using the remote plasma module 204 for cleaning, the number of particulate contaminants in the reaction chamber can be significantly reduced, which is beneficial to improving the quality of thin film deposition.

[0055] When it is necessary to separate one of the at least two pipelines 200 from the remote plasma module 204 corresponding to the pipeline 200 in order to remove the remote plasma module 204, the pipeline 200 and the remote plasma module 204 can be separated by simply disconnecting the first connector 206 and the second connector 207 corresponding to the pipeline 200. The connector assembly 203 prevents process circulating water from flowing out of the connector assembly 203. The use of the connector assembly 203 eliminates the need to close the main water supply valve 202 before removing the remote plasma module 204. This prevents the chemical vapor deposition machine from triggering an interlock device when the process circulating water is stopped, causing the reaction chamber interlocked with the remote plasma module 204 to cool down, effectively shortening the downtime of the chemical vapor deposition machine.

[0056] Please continue to refer to Figure 3 and Figure 4 The chemical vapor deposition machine also includes: a pump unit module 205, the pump unit module 205 includes: a second cooling water pipeline; the joint assembly 203 connects the pipeline 200 of the process circulating water unit and the second cooling water pipeline of the pump unit module 205.

[0057] Different pipelines 200 connect different modules 201 . Specifically, in some embodiments of the present invention, the module 201 includes a pump unit module 205 . Among the at least two pipelines 200 of the process circulating water unit, one pipeline 200 is connected to the pump unit module 205 .

[0058] The second cooling water pipeline is suitable for cooling the pump unit module 205 .

[0059] Chemical vapor deposition processes typically require a low-pressure vacuum environment to ensure that the reactant gases are evenly distributed within the reaction chamber and fully contact the substrate surface, thereby achieving high-quality thin film deposition. The pump unit module 205 continuously removes gases from the reaction chamber, reducing the pressure within the reaction chamber to achieve and maintain the required vacuum level.

[0060] When it is necessary to separate one of the at least two pipelines 200 and the pump unit module 205 corresponding to the pipeline 200 in order to remove the pump unit module 205, the pipeline 200 and the pump unit module 205 can be separated by simply separating the first connector 206 and the second connector 207 corresponding to the pipeline 200. The connector assembly 203 can prevent the process circulating water from flowing out of the connector assembly 203. The use of the connector assembly 203 eliminates the need to close the main water supply valve 202 before removing the pump unit module 205, thus preventing the chemical vapor deposition machine from triggering the interlock device when the process circulating water is stopped, causing the reaction chamber interlocked with the pump unit module 205 to cool down, effectively shortening the downtime of the chemical vapor deposition machine.

[0061] Please refer to Figure 5 The first connector 206 includes a first valve core and a first connector body 208. The first connector body 208 surrounds the first valve core. One end of the first valve core is suitable for connecting to the pipeline 200 of the process circulating water unit.

[0062] The first joint 206 is a quick joint. The material of the first joint 206 is compatible with the coolant to ensure that the first joint 206 has a long service life and avoids leakage of process circulating water caused by damage to the first joint 206.

[0063] The first valve core includes a first valve core rod 209, a first elastic member 210 and a first head structure 211. The first head structure 211 is sleeved on the first valve core rod 209. The first elastic member 210 is arranged between the first head structure 211 and the process circulating water unit. The first elastic member 210 is suitable for elastic reset to make the first head structure 211 in close contact with the first joint body 208.

[0064] The first head structure 211 is conical, with the end surface of the first head structure 211 on the side closest to the first elastic member 210 being larger than the end surface of the first head structure 211 on the side away from the first elastic member 210. The conical shape of the first head structure 211 better controls the flow of fluid and reduces spillage when connecting and disconnecting the quick connector.

[0065] The first joint body 208 includes an inner conical surface; the first head structure 211 also includes an outer conical surface, which connects the end surface of the first head structure 211 on the side close to the first elastic member 210 and the end surface of the first head structure 211 on the side away from the first elastic member 210; the first elastic member 210 is suitable for elastic reset so that the outer conical surface of the first head structure 211 is in close contact with the inner conical surface of the first joint body 208.

[0066] The first joint 206 further includes a first sealing ring (not shown), which is disposed on the inner conical surface of the first joint body 208 and is adapted to be in close contact with the outer conical surface of the first head structure 211 .

[0067] The material of the first sealing ring is compatible with the coolant, so as to ensure that the first joint 206 has a long service life and avoid leakage of process circulating water caused by damage to the first sealing ring.

[0068] The first elastic member 210 is sleeved on the first valve core rod 209 , and the first elastic member 210 is suitable for elastically resetting along the axial direction of the first valve core rod 209 to make the outer conical surface of the first head structure 211 in close contact with the inner conical surface of the first joint body 208 .

[0069] Please refer to Figure 6 , example, Figure 6The second connector 207 is adapted to be connected to the remote plasma module 204. The second connector 207 includes a second valve core and a second connector body 212. The second connector body 212 surrounds the second valve core. One end of the second valve core is adapted to be connected to the remote plasma module 204. The other end of the second valve core is adapted to press against the other end of the first valve core to allow process circulating water to flow between the second connector 207 and the first connector 206.

[0070] The second joint 207 is a quick joint. The material of the second joint 207 is compatible with the coolant to ensure that the second joint 207 has a long service life and avoids leakage of process circulating water caused by damage to the second joint 207.

[0071] The second valve core includes: a second valve core rod 213, a second elastic member 214 and a second head structure 215. The second head structure 215 is sleeved on the second valve core rod 213. The second elastic member 214 is arranged between the second head structure 215 and the remote plasma module 204. The second elastic member 214 is suitable for generating compression deformation to allow process circulating water to flow between the second joint 207 and the first joint 206.

[0072] When the other end of the second valve core presses against the other end of the first valve core, the elastic member generates compression deformation along the axial direction of the valve core rod to separate the joint body corresponding to the elastic member from the head structure, so that the process circulating water flows between the second joint 207 and the first joint 206. The elastic member includes the first elastic member 210 and the second elastic member 214.

[0073] When the other end of the second valve core and the other end of the first valve core are not pressed against each other, the elastic member is elastically reset along the axial direction of the valve core rod to make the joint body and head structure corresponding to the elastic member in close contact, so that the process circulating water does not flow between the second joint 207 and the first joint 206. The elastic member includes the first elastic member 210 and the second elastic member 214.

[0074] The second head structure 215 is conical, and the size of the end surface of the second head structure 215 close to the second elastic member 214 is larger than the size of the end surface of the second head structure 215 away from the second elastic member 214 .

[0075] The second joint body 212 includes an inner conical surface; the second head structure 215 also includes an outer conical surface, which connects the end surface of the second head structure 215 on the side close to the second elastic member 214 and the end surface of the second head structure 215 on the side away from the second elastic member 214; when the other end of the second valve core and the other end of the first valve core are not pressed against each other, the second elastic member 214 elastically resets to make the outer conical surface of the second head structure 215 in close contact with the inner conical surface of the second joint body 212.

[0076] The second joint 207 also includes: a second sealing ring (not marked), which is arranged on the inner conical surface of the second joint body 212. When the other end of the second valve core and the other end of the first valve core are not pressed against each other, the second sealing ring is in close contact with the outer conical surface of the second head structure 215.

[0077] The material of the second sealing ring is compatible with the coolant, so as to ensure that the second joint 207 has a long service life and avoid leakage of process circulating water caused by damage to the second sealing ring.

[0078] The second elastic member 214 is sleeved on the second valve core rod 213 , and the second elastic member 214 is suitable for elastically restoring along the axial direction of the second valve core rod 213 to make the outer conical surface of the second head structure 215 closely contact the inner conical surface of the second joint body 212 .

[0079] Accordingly, an embodiment of the present invention further provides a maintenance method for a chemical vapor deposition machine, wherein the chemical vapor deposition machine is as described in any one of the above items, and the maintenance method for the chemical vapor deposition machine includes: Figure 4 , while opening the main water supply valve 202 of the process circulating water unit, separate the first connector 206 and the second connector 207 of the connector assembly 203.

[0080] In the maintenance method of the chemical vapor deposition machine of the technical solution of the present invention, when a pipeline 200 in the process circulating water unit is separated from the corresponding module 201, it is not necessary to close the main water supply valve 202 of the process circulating water unit. Only the first connector 206 and the second connector 207 corresponding to the pipeline 200 are separated. The process circulating water will not flow out of the pipeline 200, will not affect the connection between other pipelines 200 and the corresponding modules 201, will not affect the cooling of other modules 201 by the process circulating water, and can effectively shorten the downtime of the chemical vapor deposition machine.

[0081] Please refer to Figure 4, the chemical vapor deposition machine includes a remote plasma module 204. Specifically, in some embodiments of the present invention, in the maintenance method of the chemical vapor deposition machine, the step of separating the first connector 206 and the second connector 207 of the connector assembly 203 includes: separating the first connector 206 and the second connector 207 of the connector assembly 203 between the remote plasma module 204 and the corresponding pipeline 200 in the chemical vapor deposition machine.

[0082] The remote plasma module 204 is suitable for cleaning the reaction chamber. During the chemical vapor deposition process, various deposits, such as unreacted precursors, reaction byproducts, and deposited thin film materials, will inevitably accumulate on the inner walls and component surfaces of the reaction chamber. The plasma generated by the remote plasma module 204 contains highly active ions and free radicals, which can chemically react with these deposits, converting them into volatile substances, which are then discharged from the chamber through the vacuum system, thereby effectively removing the deposits in the reaction chamber. By regularly using the remote plasma module 204 for cleaning, the number of particulate contaminants in the reaction chamber can be significantly reduced, which is beneficial to improving the quality of thin film deposition.

[0083] Specifically, the remote plasma module 204 includes a remote plasma source and a power supply. The maintenance method of the chemical vapor deposition machine further includes replacing at least one of the remote plasma source and the power supply.

[0084] When the equipment is in normal operation, the remote plasma module 204 will be used to clean the reaction chamber after the wafer is subjected to chemical vapor deposition in the reaction chamber. The remote plasma module 204 includes a power supply and a remote plasma source. The power supply will supply power to the remote plasma source. As time goes by, the remote plasma source and the power supply will be damaged and need to be replaced with a new one. The connector assembly 203 is used to connect the pipeline 200 and the corresponding module 201. When replacing the remote plasma source and the power supply, the water supply main valve 202 does not need to be closed, and the process circulating water will not be stopped. Thus, the remote plasma module 204 and other modules 201 having an interlocking device with the reaction chamber will not trigger the machine to trigger the interlocking device because the process circulating water is stopped, thereby avoiding the situation where the reaction chamber cools down due to the chemical vapor deposition machine triggering the interlocking device, effectively shortening the downtime of the chemical vapor deposition machine.

[0085] Please refer to Figure 4The chemical vapor deposition machine also includes a pump unit module 205. Specifically, the maintenance method of the chemical vapor deposition machine also includes: separating the first joint 206 and the second joint 207 of the joint assembly 203 between the remote plasma module 204 and the corresponding pipeline 200, and combining the first joint 206 and the second joint 207 of the joint assembly 203 between the pump unit module 205 in the chemical vapor deposition machine and the corresponding pipeline 200.

[0086] When replacing the remote plasma source or power supply, there is no need to close the main water supply valve 202, which will not cause the process circulating water to be stopped, and the pump unit module 205 with an interlocking device with the reaction chamber will not trigger the machine to trigger the interlocking device due to the process circulating water being stopped, thereby avoiding the situation where the reaction chamber is cooled down due to the chemical vapor deposition machine triggering the interlocking device, and effectively shortening the downtime of the chemical vapor deposition machine.

[0087] Specifically, in the chemical vapor deposition machine maintenance method, the step of separating the first joint 206 and the second joint 207 of the joint assembly 203 further includes: separating the first joint 206 and the second joint 207 of the joint assembly 203 during deposition in the reaction chamber.

[0088] Under normal operation of the equipment, after the wafer undergoes chemical vapor deposition in the reaction chamber, the reaction chamber will be cleaned using the remote plasma module 204. When the connector assembly 203 described in the technical solution of the present invention is used to connect the pipeline 200 and the remote plasma module 204, during the deposition process in the reaction chamber, the first connector 206 and the second connector 207 of the connector assembly 203 can be separated to replace the remote plasma source and the power supply without closing the main water supply valve 202, which will not cause the process circulating water to be stopped. As a result, the remote plasma module 204 and other modules 201 that have an interlocking device with the reaction chamber will not trigger the machine interlocking device due to the stopping of the process circulating water, thereby avoiding the situation where the reaction chamber temperature drops due to the chemical vapor deposition machine triggering the interlocking device, and effectively shortening the downtime of the chemical vapor deposition machine.

[0089] Specifically, when the chemical vapor deposition machine operates normally, the temperature of the reaction chamber is approximately 350° C. to 380° C.

[0090] In summary, the chemical vapor deposition machine adopts the connector assembly 203. When it is necessary to separate the pipeline 200 and the module 201 corresponding to the pipeline 200 to remove the corresponding module 201, the pipeline 200 and the corresponding module 201 can be separated by directly separating the first connector 206 and the second connector 207 corresponding to the pipeline 200. There is no need to close the main water supply valve 202 and then remove the corresponding module 201. This avoids the chemical vapor deposition machine triggering the interlocking device when the process circulating water is stopped, causing the reaction chamber interlocked with the module 201 to cool down, thereby effectively shortening the machine downtime; and the connector assembly 203 is a quick connector. The first connector 206 and the second connector 207 are connected by plugging, so that the staff can easily complete the connection and disconnection between each pipeline 200 and the corresponding module 201, thereby improving work efficiency; in addition, the use of extremely low overflow quick connectors can prevent medium overflow from causing damage or malfunction to nearby equipment, and reduce the risk of unexpected shutdown of the chemical vapor deposition machine; in addition, the quick connector has a compact structure and occupies a small space.

[0091] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the claims.

Claims

1. A chemical vapor deposition machine, characterized in that: include: A process circulating water unit, the process circulating water unit comprising: at least two pipelines, different pipelines connecting different modules; A connector assembly is located between the pipeline and the corresponding module to achieve waterway connectivity, wherein the connector assembly includes: a first connector and a second connector, the first connector is located at the end of the pipeline to block the pipeline when the first connector and the second connector are separated, and the second connector is located in the corresponding module.

2. The chemical vapor deposition apparatus according to claim 1, wherein: The first connector and the second connector are connected by plugging.

3. The chemical vapor deposition apparatus according to claim 1, wherein: Also includes: A remote plasma module, the remote plasma module comprising: a first cooling water pipeline; The joint assembly is connected to the pipeline of the process circulating water unit and the first cooling water pipeline of the remote plasma module.

4. The chemical vapor deposition apparatus according to claim 3, wherein: The remote plasma module includes: a remote plasma source and a power supply; the first cooling water pipeline is suitable for cooling at least one of the remote plasma source and the power supply.

5. The chemical vapor deposition apparatus according to claim 3, wherein: Also includes: A pump unit module, the pump unit module comprising: a second cooling water pipeline, the second cooling water pipeline being suitable for cooling the pump unit module; The joint assembly is connected to the pipeline of the process circulating water unit and the second cooling water pipeline of the pump unit module.

6. The chemical vapor deposition apparatus according to claim 1, wherein: The process circulating water unit includes: a water supply main valve, which is suitable for connecting to the at least two pipelines and is suitable for controlling the on-off of the process circulating water in the at least two pipelines.

7. A method for maintaining a chemical vapor deposition machine, characterized in that: The chemical vapor deposition machine according to any one of claims 1 to 6, wherein the maintenance method of the chemical vapor deposition machine comprises: While opening the main water supply valve of the process circulating water unit, the first connector and the second connector of the connector assembly are separated.

8. The maintenance method of a chemical vapor deposition machine according to claim 7, wherein: The step of separating the first joint and the second joint of the joint assembly includes: separating the first joint and the second joint of the joint assembly between the remote plasma module and the corresponding pipeline in the chemical vapor deposition machine; The maintenance method further includes replacing at least one of the remote plasma source and the power supply.

9. The maintenance method of a chemical vapor deposition machine according to claim 8, wherein: Also includes: The first and second joints of the joint assembly between the remote plasma module and the corresponding pipeline are separated, and the first and second joints of the joint assembly between the pump unit module in the chemical vapor deposition machine and the corresponding pipeline are combined.

10. The maintenance method of a chemical vapor deposition machine according to claim 8, wherein: The step of separating the first joint and the second joint of the joint assembly further includes: separating the first joint and the second joint of the joint assembly during deposition in the reaction chamber.

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