Non-contact temperature measurement method and system based on erbium-doped near-infrared long afterglow material

Abstract

The invention relates to a non-contact temperature measurement method and system based on an erbium-doped near-infrared long afterglow material, and the method comprises the steps: firstly exciting an erbium-doped near-infrared long afterglow sensing module, and then placing the erbium-doped near-infrared long afterglow sensing module at a to-be-measured point; spectral information of near-infrared light which is emitted by afterglow of the erbium-doped near-infrared long afterglow sensing module and coupled with temperature information of a point to be measured is analyzed, and the temperature of the point to be measured is calculated based on the fluorescence intensity integral ratio of (DS1 + DS3) to (DS2 + DS4). According to the method, the problem that in the existing non-contact optical temperature measurement based on the fluorescence intensity ratio, X-rays need to be excited in real time, so that biological tissues are possibly damaged is solved; meanwhile, the method is simple to operate, low in calculation amount and high in efficiency.

Description

Technical Field

[0001] The present invention belongs to the field of non-contact temperature measurement technology, relates to a non-contact temperature measurement technology of near-infrared long afterglow materials, and in particular to a non-contact temperature measurement method and system based on erbium-doped near-infrared long afterglow materials. Background Art

[0002] In recent years, non-contact optical temperature measurement technology has attracted widespread attention due to its high sensitivity and wide measurement range. By leveraging temperature-dependent optical parameters such as fluorescence intensity ratio, fluorescence lifetime, luminescence intensity, polarization characteristics, bandwidth, and spectral position, this technology achieves efficient non-contact temperature measurement, demonstrating significant potential and advantages in various application areas. In particular, non-contact optical temperature measurement based on fluorescence intensity ratio is considered the most promising non-contact temperature measurement technology.

[0003] Currently, non-contact optical temperature measurement technology based on fluorescence intensity ratio requires an excitation source to continuously excite the temperature sensor during the measurement process to achieve non-contact temperature sensing. Common excitation sources typically have high light energy, such as X-rays, which poses an exposure risk to both the measured and the tester during the non-contact temperature measurement process. This, to a certain extent, limits the application of non-contact optical temperature measurement based on fluorescence intensity ratio.

[0004] On the other hand, existing non-contact optical temperature measurement technologies based on fluorescence intensity ratio generally use fluorescent materials based on the visible light band as sensors. Their luminescence centers are limited by their short wavelength characteristics, such as 1) the average penetration depth of visible light is insufficient, making it difficult to achieve non-destructive temperature measurement deep in biological tissues; 2) it is easily interfered by environmental stray light, resulting in large temperature measurement errors; 3) short-wavelength photons have high energy, and there is a risk of phototoxicity to biological tissues during continuous excitation, which does not meet the safety requirements of biocompatibility. Summary of the Invention

[0005] Based on this, the purpose of the present invention is to provide a non-contact temperature measurement method based on erbium-doped near-infrared long-afterglow materials. Compared with the existing method in which the excitation source continuously performs optical excitation on the fluorescent sensor in the visible light band during the temperature measurement process to achieve non-contact temperature measurement, this method can effectively avoid the long-term irradiation and thermal effects caused by long-term irradiation in the temperature measurement process, as well as the problems of poor penetrability and non-compliance with biocompatibility safety requirements.

[0006] A non-contact temperature measurement method based on erbium-doped near-infrared long afterglow material comprises the following steps:

[0007] An erbium-doped near-infrared long afterglow sensor module excited by an excitation source is placed at a point to be measured, and a light detector is used to collect the near-infrared light coupled to the temperature information of the point to be measured emitted by the erbium-doped near-infrared long afterglow sensor module;

[0008] The fluorescence intensity in the DS1, DS2, DS3 and DS4 bands in the infrared spectrum is fitted with a peak-separated Gaussian distribution. The temperature T of the test point is obtained based on the integral ratio of the fluorescence intensity of (DS1+DS3) and (DS2+DS4):

[0009]

[0010] Where: I DS1 Represents the sub-energy level Y 4-7 →X 1-4 The intensity integral of the emission band, I DS2 Represents the sub-energy level Y 1-3 →X 1-4 The intensity integral of the emission band, I DS3 Represents the sub-energy level Y 4-7 →X 5-8 The intensity integral and I DS4 Represents the sub-energy level Y 1-3 →X 5-8 The intensity integral of the emission band, represents the ratio of the energy gap between the erbium ion sublevels to the Boltzmann constant; A is the fitting constant.

[0011] Compared with the existing technology, the present invention excites an erbium-doped near-infrared long afterglow sensor module in advance, places the erbium-doped near-infrared long afterglow sensor module at a test point after excitation, analyzes the spectral information of the near-infrared light coupled to the temperature information of the test point emitted by the erbium-doped near-infrared long afterglow sensor module, and calculates the temperature of the test point based on the integrated ratio of the fluorescence intensities of (DS1+DS3) and (DS2+DS4). This method solves the problem of existing non-contact optical temperature measurement based on fluorescence intensity ratio, which requires real-time excitation of X-rays, etc., which may cause damage to biological tissue. This method is simple to operate, has low computational complexity, and is highly efficient.

[0012] Furthermore, the erbium-doped near-infrared long afterglow sensor module is first excited by an excitation source for 20 minutes to 40 minutes before measuring the temperature of the test point.

[0013] Furthermore, the excitation source is one of gamma rays, X-rays, ultraviolet light, visible light, and electron beams.

[0014] Furthermore, the erbium-doped near-infrared long afterglow sensor module includes an erbium-doped near-infrared long afterglow material system LiYF4:Er 3 + , the LiYF4:Er 3+ It is a square phase.

[0015] Furthermore, the LiYF4:Er 3+ Prepared by the following method:

[0016] SA1: 2 mmol of Y(NO3)3·6H2O and Er(NO3)3·6H2O standard solutions were taken in a stoichiometric ratio and added to 10 mL of deionized water containing 2 mmol of EDTA. The mixture was stirred with a magnetic stirrer for 30 min to form a RE-EDTA complex.

[0017] SA2 Weigh 14 mmol LiF and dissolve it in 15 mL deionized water. Stir it with a magnetic stirrer for 30 min. After it is completely dissolved, add it to the RE-EDTA complex and stir it for 30 min to form a white turbid solution.

[0018] SA3: Pour the white turbid solution into a 40 mL reactor, seal it, and heat it in an oven at 180°C for 12 h.

[0019] SA4: The solution obtained in step SA3 was cooled and centrifuged, and washed with deionized water and ethanol three times each, and filtered to obtain a white precipitate; the white precipitate was dried in an oven at 60°C for 12 hours to obtain tetragonal LiYF4:Er 3+ .

[0020] Furthermore, the ratio of the energy gap between the erbium ion sublevels to the Boltzmann constant and the fitting constant A are obtained by the following method:

[0021] SC1 uses an excitation source to optically excite the erbium-doped near-infrared long-lasting glow material system of the erbium-doped near-infrared long-lasting glow sensor module for 30 minutes.

[0022] SC2 turns off the excitation source and uses a hot and cold stage to heat the erbium-doped near-infrared long afterglow sensor module from 298K to 448K. Every time the temperature rises by 10K, a light detector is used to collect and analyze the spectrum of the near-infrared light emitted by the erbium-doped near-infrared long afterglow material system.

[0023] SC3 performs peak-wise Gaussian distribution fitting on the fluorescence intensity in the DS1, DS2, DS3, and DS4 bands of the infrared spectra collected at each temperature point, calculates the integrated ratio of fluorescence intensity (DS1+DS3) to (DS2+DS4) at each temperature point, and plots the integrated ratio of fluorescence intensity versus temperature T.

[0024] SC4 utilizes formula Fitting the curves yields the ratio of the energy gap between the erbium ion sublevels to the Boltzmann constant. and the value of the fitting constant A.

[0025] Furthermore, the ratio of the energy gap between the erbium ion sublevels to the Boltzmann constant and the fitting constant A are verified by the following method:

[0026] SD1 heats the erbium-doped near-infrared long-afterglow sensor module placed on a hot and cold stage, raising the temperature of the erbium-doped near-infrared long-afterglow material system from 298K to 448K. A light detector is used to collect and analyze the spectrum of the near-infrared light emitted by the erbium-doped near-infrared long-afterglow material system every 10K increase. The erbium-doped near-infrared long-afterglow material system is continuously photoexcited throughout the entire heating process.

[0027] SD2 performs peak-wise Gaussian distribution fitting on the fluorescence intensity in the DS1, DS2, DS3, and DS4 bands of the infrared spectra collected at each temperature point, calculates the integrated ratio of fluorescence intensity (DS1+DS3) to (DS2+DS4) at each temperature point, and plots the integrated ratio of fluorescence intensity versus temperature T.

[0028] SD3 utilization formula Fitting the curves yields the ratio of the energy gap between the erbium ion sublevels to the Boltzmann constant. and the value of the fitting constant A′;

[0029] The ratio of the energy gap between erbium ion sublevels measured by SD4 comparison excitation process to the Boltzmann constant The fitting constant A′ is the ratio of the energy gap between the erbium ion sublevels measured by the afterglow process to the Boltzmann constant. Deviation of the fitting constant A; determine whether the deviation is within the allowable threshold range:

[0030] If yes, then the ratio of the energy gap between the erbium ion sublevels measured by the afterglow process to the Boltzmann constant is The fitting constant A has high reliability;

[0031] If not, use right Make corrections and use A′ to correct A.

[0032] At the same time, the present invention also provides a non-contact temperature measurement system based on erbium-doped near-infrared long afterglow material.

[0033] A non-contact temperature measurement system based on erbium-doped near-infrared long-afterglow materials includes an excitation source, an erbium-doped near-infrared long-afterglow sensor module, a light detector, and a signal processor. The excitation source performs optical excitation on the erbium-doped near-infrared long-afterglow sensor module for a set time and then turns off. The erbium-doped near-infrared long-afterglow sensor module emits near-infrared light that couples the temperature information of a point to be measured. The light detector collects and analyzes the spectrum of the near-infrared light and transmits the spectral information to the signal processor. The signal processor performs peak-separated Gaussian distribution fitting on the fluorescence intensity in the DS1, DS2, DS3, and DS4 bands of the infrared spectrum and obtains the temperature T of the point to be measured based on the integrated ratio of the fluorescence intensity (DS1+DS3) to (DS2+DS4):

[0034]

[0035] Where: I DS1 Represents the sub-energy level Y 4-7 →X 1-4 The intensity integral of the emission band, I DS2 Represents the sub-energy level Y 1-3 →X 1-4 The intensity integral of the emission band, I DS3 Represents the sub-energy level Y 4-7 →X 5-8 The intensity integral and I DS4 Represents the sub-energy level Y 1-3 →X 5-8 The intensity integral of the emission band, represents the ratio of the energy gap between the erbium ion sublevels to the Boltzmann constant; A is the fitting constant.

[0036] Furthermore, the ratio of the energy gap between the erbium ion sublevels to the Boltzmann constant and the fitting constant A are obtained by the following method:

[0037] SC1 uses an excitation source to optically excite the erbium-doped near-infrared long-lasting glow material system of the erbium-doped near-infrared long-lasting glow sensor module for 30 minutes.

[0038] SC2 turns off the excitation source and uses a hot and cold stage to heat the erbium-doped near-infrared long afterglow sensor module from 298K to 448K. Every time the temperature rises by 10K, a light detector is used to collect and analyze the spectrum of the near-infrared light emitted by the erbium-doped near-infrared long afterglow material system.

[0039] SC3 performs peak-wise Gaussian distribution fitting on the fluorescence intensity in the DS1, DS2, DS3, and DS4 bands of the infrared spectra collected at each temperature point, calculates the integrated ratio of fluorescence intensity (DS1+DS3) to (DS2+DS4) at each temperature point, and plots the integrated ratio of fluorescence intensity versus temperature T.

[0040] SC4 utilizes formula Fitting the curves yields the ratio of the energy gap between the erbium ion sublevels to the Boltzmann constant. and the value of the fitting constant A.

[0041] Furthermore, the ratio of the energy gap between the erbium ion sublevels to the Boltzmann constant and the fitting constant A are verified by the following method:

[0042] SD1 heats the erbium-doped near-infrared long-afterglow sensor module placed on a hot and cold stage, raising the temperature of the erbium-doped near-infrared long-afterglow material system from 298K to 448K. A light detector is used to collect and analyze the spectrum of the near-infrared light emitted by the erbium-doped near-infrared long-afterglow material system every 10K increase. The erbium-doped near-infrared long-afterglow material system is continuously photoexcited throughout the entire heating process.

[0043] SD2 performs peak-wise Gaussian distribution fitting on the fluorescence intensity in the DS1, DS2, DS3, and DS4 bands of the infrared spectra collected at each temperature point, calculates the integrated ratio of fluorescence intensity (DS1+DS3) to (DS2+DS4) at each temperature point, and plots the integrated ratio of fluorescence intensity versus temperature T.

[0044] SD3 utilization formula Fitting the curves yields the ratio of the energy gap between the erbium ion sublevels to the Boltzmann constant. and the value of the fitting constant A′;

[0045] The ratio of the energy gap between erbium ion sublevels measured by SD4 comparison excitation process to the Boltzmann constant The fitting constant A′ is the ratio of the energy gap between the erbium ion sublevels measured by the afterglow process to the Boltzmann constant. Deviation of the fitting constant A; determine whether the deviation is within the allowable threshold range:

[0046] If yes, then the ratio of the energy gap between the erbium ion sublevels measured by the afterglow process to the Boltzmann constant is The fitting constant A has high reliability;

[0047] If not, use right Make corrections and use A′ to correct A.

[0048] Compared with the existing technology, the non-contact temperature measurement system based on erbium-doped near-infrared long-afterglow materials has the same beneficial effects as a non-contact temperature measurement method based on erbium-doped near-infrared long-afterglow materials, and the designed non-contact temperature measurement system based on erbium-doped near-infrared long-afterglow materials is simple, low-cost and highly reliable.

[0049] For better understanding and implementation, the present invention is described in detail below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 LiYF4:Er 3+ Schematic diagram of the possible long afterglow luminescence mechanism of the sample;

[0051] Figure 2 (a) is the erbium-doped near-infrared long-lasting luminescent material system LiYF4:Er prepared by the present invention 3+ Scanning electron microscope images of Figure 2 (b) is the erbium-doped near-infrared long afterglow luminescent material system LiYF4:Er prepared by the present invention 3+ X-ray diffraction pattern of;

[0052] Figure 3 LiYF4:Er is an erbium-doped near-infrared long-lasting luminescent material system. 3+ Schematic diagram of sub-level transition under X-ray excitation;

[0053] Figure 4 for Figure 3 Emission spectrum of the corresponding band;

[0054] Figure 5 Schematic diagram of the process of the non-contact temperature measurement method based on erbium-doped near-infrared long afterglow material of the present invention;

[0055] Figure 6 To stop X-ray excitation, the erbium-doped near-infrared long afterglow luminescent material system LiYF4:Er 3+ Afterglow decay curve monitored at 1538nm;

[0056] Figure 7 (a) is the afterglow process of LiYF4:Er 3+ Characteristic curve of the integrated ratio of fluorescence intensity between the emission bands (DS1+DS3) and (DS2+DS4) changing with temperature; Figure 7 (b) is based on Figure 7 (a) Calculated relative sensitivity as a function of temperature.

[0057] Figure 8 (a) is the excitation process of LiYF4:Er 3+Characteristic curve of the integrated ratio of fluorescence intensity between the emission bands (DS1+DS3) and (DS2+DS4) changing with temperature; Figure 8 (b) is based on Figure 8 (a) Calculated relative sensitivity as a function of temperature. DETAILED DESCRIPTION

[0058] The technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the embodiments of the present invention.

[0059] Near-infrared long-lasting glow materials have a unique delayed luminescence property, which means they can continue to emit light even after the excitation source stops. Secondly, their long luminescence wavelength makes them less absorbed by biological tissues, allowing them to easily penetrate biological tissues. They have great potential for promotion in biomedical applications and have attracted much attention. On the other hand, please refer to Figure 1 , Er 3+ The erbium ion is excited and generates 4I 13 / 2 →4I 15 / 2 transition, producing near-infrared luminescence; under the interaction of spin-orbit coupling and crystal field, Er 3+ Erbium ion 4I 13 / 2 The energy level is split into 7 sub-levels (Y1-7), 4I 15 / 2 The energy level is split into 8 sub-levels (X1-8), among which Er 3+ The energy gap between the Y4-7 and Y1-3 sublevels of erbium ions is about 200 cm -1 , indicating that there is thermal coupling between the Y4-7 and Y1-3 sub-levels.

[0060] Combining the optical characteristics of near-infrared long-afterglow materials, and addressing the defects of existing methods in which an excitation source continuously photoexcites a fluorescence sensor in the visible light band during the temperature measurement process to achieve non-contact temperature measurement, the present invention designs a near-infrared long-afterglow luminescent material system that can be excited by X-rays. This solves the problem that existing non-contact optical temperature measurement based on fluorescence intensity ratio requires real-time X-ray excitation, which may cause damage to biological tissues.

[0061] To implement a non-contact temperature measurement method based on erbium-doped near-infrared long-afterglow materials, the present invention proposes a non-contact temperature measurement system based on erbium-doped near-infrared long-afterglow materials. The temperature measurement system includes an excitation source, an erbium-doped near-infrared long-afterglow sensor module, a photodetector, and a signal processor. The excitation source optically excites the erbium-doped near-infrared long-afterglow sensor module and then turns off. The erbium-doped near-infrared long-afterglow sensor module emits near-infrared light that couples the temperature information of the measured point. The photodetector collects and analyzes the spectrum of the near-infrared light and transmits the spectral information to the signal processor. The signal processor processes the received spectral information to calculate the temperature of the environment in which the erbium-doped near-infrared long-afterglow sensor module is located.

[0062] In a specific implementation, the excitation source emits excitation light at a certain wavelength and power, and the wavelength of the emitted excitation light matches the absorption light of the erbium-doped near-infrared long-afterglow sensor module, for example, gamma rays, X-rays, ultraviolet light, electron beams, etc. In this embodiment, X-rays are used as the excitation source.

[0063] The erbium-doped near-infrared long afterglow sensor module is placed at the test point, which includes the erbium-doped near-infrared long afterglow material system LiYF4:Er 3+ The LiYF4:Er 3+ After being excited by the excitation source, it can emit near-infrared light coupled with the temperature information of the point to be measured.

[0064] In this embodiment, LiYF4:Er 3+ Prepared by hydrothermal method.

[0065] SA1: 2 mmol of Y(NO3)3·6H2O and Er(NO3)3·6H2O standard solutions were taken in a stoichiometric ratio and added to 10 mL of deionized water containing 2 mmol of EDTA. The mixture was stirred with a magnetic stirrer for 30 min to form a RE-EDTA complex.

[0066] SA2 Weigh 14 mmol LiF and dissolve it in 15 mL deionized water. Stir it with a magnetic stirrer for 30 min. After it is completely dissolved, add it to the RE-EDTA complex and stir it for 30 min to form a white turbid solution.

[0067] SA3: Pour the white turbid solution into a 40 mL reactor, seal it, and heat it in an oven at 180°C for 12 h.

[0068] SA4: The solution obtained in step SA3 was cooled and centrifuged, and washed with deionized water and ethanol three times each, and filtered to obtain a white precipitate; the white precipitate was dried in an oven at 60°C for 12 hours to obtain tetragonal LiYF4:Er 3+ .

[0069] Tetragonal LiYF4:Er 3+ The X-ray diffraction pattern and scanning electron microscope image are as follows Figure 2 (a), Figure 2 (b) shown.

[0070] In a specific implementation, the molar ratio of Y(NO3)3·6H2O to Er(NO3)3·6H2O is (85-99):1.

[0071] The LiYF4:Er shown in Examples SA1 to SA4 3+ The preparation method is not for tetragonal LiYF4:Er3+ The preparation method is limited, and other methods that can prepare the same crystal form and the same ratio are acceptable.

[0072] The optical detector collects and analyzes the spectrum of the near-infrared light emitted by the erbium-doped near-infrared long afterglow sensor module and coupled with the temperature information of the measured point.

[0073] The erbium-doped near-infrared long afterglow sensor module and the light detector can be integrated and packaged on a probe, or the erbium-doped near-infrared long afterglow sensor module and the light detector can be connected via optical fiber communication, depending on the application scenario.

[0074] The signal processor performs peak-separated Gaussian distribution fitting on the fluorescence intensity in the DS1, DS2, DS3 and DS4 bands in the infrared spectrum transmitted by the light detector, and obtains the temperature of the test point based on the integrated ratio of the fluorescence intensity of (DS1+DS3) and (DS2+DS4).

[0075] See also Figure 3 , Figure 4 , DS1 represents the secondary energy level Y 4-7 →X 1-4 The emission band; DS2 represents the secondary energy level Y 1-3 →X 1-4 Emission band; DS3 represents the secondary energy level Y 4-7 →X 5-8 Emission band; DS4 represents the secondary energy level Y 1-3 →X 5-8 emission band.

[0076] According to the non-contact temperature measurement system based on erbium-doped near-infrared long-lasting glow materials, please refer to Figure 5 The non-contact temperature measurement method based on erbium-doped near-infrared long afterglow material described in the present invention includes the following steps.

[0077] S00 uses an excitation source to perform optical excitation on the erbium-doped near-infrared long afterglow sensor module for a set time.

[0078] In a specific implementation, the set time is set to 20 minutes to 40 minutes, which is set according to the afterglow characteristics of the erbium-doped near-infrared long afterglow sensor module.

[0079] S10 stops light excitation, sets the erbium-doped near-infrared long afterglow sensor module at the test point, and uses a light detector to collect the near-infrared light coupled with the temperature information of the test point emitted by the erbium-doped near-infrared long afterglow sensor module.

[0080] See also Figure 6 In this embodiment, after stopping the X-ray excitation, according to the erbium-doped near-infrared long afterglow luminescent material system LiYF4:Er 3+Afterglow decay curve monitored at 1538nm: In the initial ten minutes of decay, the erbium-doped near-infrared long afterglow luminescent material system LiYF4:Er 3+ The afterglow intensity drops rapidly, which is a rapid decay process, and then the afterglow intensity shows a slow decline trend, which is a slow decay process. After 12 hours after stopping the X-ray excitation, the afterglow can still be detected, proving that LiYF4:Er 3+ It has good afterglow performance in the second near-infrared band.

[0081] S20 performs peak-wise Gaussian distribution fitting on the fluorescence intensity in the DS1, DS2, DS3, and DS4 bands in the infrared spectrum, and obtains the temperature T of the test point based on the integrated ratio of the fluorescence intensity of (DS1+DS3) and (DS2+DS4).

[0082] Specifically, according to Calculate the temperature T of the measured point,

[0083] but

[0084] Where: I DS1 Represents the sub-energy level Y 4-7 →X 1-4 The intensity integral of the emission band, I DS2 Represents the sub-energy level Y 1-3 →X 1-4 The intensity integral of the emission band, I DS3 Represents the sub-energy level Y 4-7 →X 5-8 The intensity integral and I DS4 Represents the sub-energy level Y 1-3 →X 5-8 The intensity integral of the emission band, represents the ratio of the energy gap between the erbium ion sublevels to the Boltzmann constant, and its value is obtained by fitting the integrated ratio of the fluorescence intensity of the erbium-doped near-infrared long afterglow sensor module at different temperatures; A is the fitting constant, and its value is obtained by fitting the integrated ratio of the fluorescence intensity of the erbium-doped near-infrared long afterglow sensor module at different temperatures.

[0085] Specifically, the erbium-doped near-infrared long afterglow sensor module is obtained by the following method: With A.

[0086] SC1 uses an excitation source to optically excite the erbium-doped near-infrared long-lasting glow material system of the erbium-doped near-infrared long-lasting glow sensor module for 30 minutes.

[0087] SC2 turns off the excitation source and uses a hot and cold stage to heat the erbium-doped near-infrared long afterglow sensor module from 298K to 448K. Every time the temperature rises by 10K, a light detector is used to collect and analyze the spectrum of the near-infrared light emitted by the erbium-doped near-infrared long afterglow material system.

[0088] SC3 performs peak-wise Gaussian distribution fitting on the fluorescence intensity in the DS1, DS2, DS3, and DS4 bands of the infrared spectra collected at each temperature point, calculates the integrated ratio of fluorescence intensity (DS1+DS3) to (DS2+DS4) at each temperature point, and plots the integrated ratio of fluorescence intensity versus temperature T.

[0089] SC4 utilizes formula Fitting the curves yields the ratio of the energy gap between the erbium ion sublevels to the Boltzmann constant. and the value of the fitting constant A;

[0090] SC5 is based on the ratio of the energy gap between the sublevels of erbium ions and the Boltzmann constant. Calculation of temperature measurement relative sensitivity S of erbium-doped near-infrared long afterglow sensor module r :

[0091]

[0092] See also Figure 7 , is LiYF4:Er prepared by SA1~SA4 3+ As an erbium-doped near-infrared long afterglow sensor module, execute steps SC1 to SC4 to obtain a graph of the fluorescence intensity integral ratio and temperature T, using X-ray as the excitation source; obtain the ratio of the energy gap between the erbium ion sublevels and the Boltzmann constant from the curve fitting. Fitting constant A=1.32.

[0093] In order to verify the reliability of various parameters in the afterglow emission infrared light, the near-infrared light emitted by the excited erbium-doped near-infrared long afterglow sensor module is used for analysis and verification, which includes the following steps.

[0094] SD1 heats the erbium-doped near-infrared long-afterglow sensor module placed on a hot and cold stage, raising the temperature of the erbium-doped near-infrared long-afterglow material system from 298K to 448K. A light detector is used to collect and analyze the spectrum of the near-infrared light emitted by the erbium-doped near-infrared long-afterglow material system every 10K increase. The erbium-doped near-infrared long-afterglow material system is continuously photoexcited throughout the entire heating process.

[0095] SD2 performs peak-wise Gaussian distribution fitting on the fluorescence intensity in the DS1, DS2, DS3, and DS4 bands of the infrared spectra collected at each temperature point, calculates the integrated ratio of fluorescence intensity (DS1+DS3) to (DS2+DS4) at each temperature point, and plots the integrated ratio of fluorescence intensity versus temperature T.

[0096] SD3 utilization formula Fitting the curves yields the ratio of the energy gap between the erbium ion sublevels to the Boltzmann constant. and the value of the fitting constant A′;

[0097] The ratio of the energy gap between erbium ion sublevels measured by SD4 comparison excitation process to the Boltzmann constant The fitting constant A′ is the ratio of the energy gap between the erbium ion sublevels measured by the afterglow process to the Boltzmann constant. Deviation of the fitting constant A; determine whether the deviation is within the allowable threshold range:

[0098] If yes, then the ratio of the energy gap between the erbium ion sublevels measured by the afterglow process to the Boltzmann constant is The fitting constant A has high reliability;

[0099] If not, use right Make corrections and use A′ to correct A;

[0100] SD5 is based on the ratio of the energy gap between the sublevels of erbium ions and the Boltzmann constant. Calculation of temperature measurement relative sensitivity S of erbium-doped near-infrared long afterglow sensor module r ′:

[0101]

[0102] See also Figure 8 , is LiYF4:Er prepared by SA1~SA4 3+ As an erbium-doped near-infrared long afterglow sensor module, execute steps SD1 to SD4 to obtain a graph of the fluorescence intensity integral ratio and temperature T, using X-ray as the excitation source; obtain the ratio of the energy gap between the erbium ion sublevels and the Boltzmann constant from the curve fitting. Fitting constant A=1.32.

[0103] from Figure 7 and Figure 8 The parameter values obtained by fitting show that the tetragonal erbium-doped near-infrared long afterglow system LiYF4:Er 3+The curve parameter fitting of the fluorescence intensity integral ratio and temperature T of the non-contact temperature measurement by afterglow is consistent with that of the non-contact temperature measurement by continuous excitation, indicating that the tetragonal erbium-doped near-infrared long afterglow system LiYF4:Er 3+ The non-contact temperature measurement using afterglow is highly reliable.

[0104] The non-contact temperature measurement method based on erbium-doped near-infrared long afterglow material proposed in this application only requires the erbium-doped near-infrared long afterglow sensor module to be excited for a specific time in advance, and then the erbium-doped near-infrared long afterglow sensor module can be placed at the point to be measured for temperature measurement. The measurement method is simple to operate, has low calculation amount and high efficiency; at the same time, the designed non-contact temperature measurement system based on erbium-doped near-infrared long afterglow material is simple and low-cost.

[0105] The temperature and parameter calculations in the aforementioned non-contact temperature measurement method based on erbium-doped near-infrared long-afterglow materials are stored in an electronic device and executed by the electronic device to locate the obscured object. The electronic device includes, but is not limited to, a memory, a processor, and a network interface that can be interconnected via a system bus.

[0106] The electronic device may be a computing device such as a rack server, a blade server, a tower server, or a cabinet server, etc. The electronic device may be an independent server or a server cluster composed of multiple servers.

[0107] The memory includes at least one type of readable storage medium, and the readable storage medium includes a flash memory, a hard disk, a multimedia card, a card-type memory (for example, an SD or DX memory, etc.), a random access memory (RAM), a static random access memory (SRAM), a read-only memory (ROM), an electrically erasable programmable read-only memory (EEPROM), a programmable read-only memory (PROM), a magnetic memory, a magnetic disk, an optical disk, etc. The memory can be an internal storage unit of the electronic device, such as a hard disk or memory of the electronic device. The memory can also be an external storage device of the electronic device, such as a plug-in hard disk equipped on the electronic device, a smart memory card (SMC), a secure digital (SD) card, a flash card, etc. The memory can also include both an internal storage unit of the electronic device and its external storage device.

[0108] The processor can be a central processing unit (CPU), a controller, a microcontroller, a microprocessor, or other data processing chip. The processor is typically used to control the overall operation of the electronic device, such as performing control and processing related to data interaction or communication with the electronic device. The processor is used to execute program code stored in the memory or process data, such as performing temperature calculations and parameter calculations in the non-contact temperature measurement method based on erbium-doped near-infrared long-afterglow materials.

[0109] The network interface may include a wireless network interface or a wired network interface, which is generally used to establish a communication connection between the electronic device and other electronic devices. For example, the network interface is used to connect the electronic device to an external data platform via a network, and to establish a data transmission channel and a communication connection between the electronic device and the external data platform. The network may be a wireless or wired network such as an intranet, the Internet, a global system of mobile communications (GSM), wideband code division multiple access (WCDMA), a 4G network, a 5G network, Bluetooth, or Wi-Fi.

[0110] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments and are not intended to limit the embodiments of the present application. The singular forms of "a", "said" and "the" used in the embodiments of the present application and the claims are also intended to include plural forms, unless the context clearly indicates other meanings. It should also be understood that, unless otherwise specified, "multiple" and "several" refer to two or more; "and / or" refers to and includes any or all possible combinations of one or more associated listed items; "first", "second", "third" and the like are only used to distinguish, and are not used to describe a specific order or sequence, nor can they be understood as indicating or implying relative importance. When the above description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. In the description of the present application, for those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to the specific circumstances.

[0111] The above-described embodiments merely represent several implementations of the present invention. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person skilled in the art would be able to make numerous modifications and improvements without departing from the spirit of the present invention, and the present invention is intended to encompass such modifications and variations.

Claims

1. A non-contact temperature measurement method based on erbium-doped near-infrared long afterglow material, characterized in that: The following steps are involved: An erbium-doped near-infrared long afterglow sensor module excited by an excitation source is placed at a point to be measured, and a light detector is used to collect the near-infrared light coupled to the temperature information of the point to be measured emitted by the erbium-doped near-infrared long afterglow sensor module; The fluorescence intensity in the DS1, DS2, DS3 and DS4 bands in the infrared spectrum is fitted with a peak-separated Gaussian distribution. The temperature T of the test point is obtained based on the integral ratio of the fluorescence intensity of (DS1+DS3) and (DS2+DS4): Where: I DS1 Represents the sub-energy level Y 4-7 →X 1-4 The intensity integral of the emission band, I DS2 Represents the sub-energy level Y 1-3 →X 1-4 The intensity integral of the emission band, I DS3 Represents the sub-energy level Y 4-7 →X 5-8 The intensity integral and I DS4 Represents the sub-energy level Y 1-3 →X 5-8 The intensity integral of the emission band, represents the ratio of the energy gap between the erbium ion sublevels to the Boltzmann constant; A is the fitting constant.

2. The non-contact temperature measurement method based on erbium-doped near-infrared long afterglow material according to claim 1, characterized in that: Before measuring the temperature of the measured point, the erbium-doped near-infrared long afterglow sensor module is first excited by an excitation source for 20 to 40 minutes.

3. The non-contact temperature measurement method based on erbium-doped near-infrared long afterglow material according to claim 2, characterized in that: The excitation source is one of gamma rays, X-rays, ultraviolet light, and electron beams.

4. The non-contact temperature measurement method based on erbium-doped near-infrared long afterglow material according to claim 1, characterized in that: The erbium-doped near-infrared long afterglow sensor module includes the erbium-doped near-infrared long afterglow material system LiYF4:Er 3+ , the LiYF4:Er 3 + It is a square phase.

5. The non-contact temperature measurement method based on erbium-doped near-infrared long afterglow material according to claim 4, characterized in that: The LiYF4:Er 3+ Prepared by the following method: SA1: 2 mmol of Y(NO3)3·6H2O and Er(NO3)3·6H2O standard solutions were taken in a stoichiometric ratio and added to 10 mL of deionized water containing 2 mmol of EDTA. The mixture was stirred with a magnetic stirrer for 30 min to form a RE-EDTA complex. SA2 Weigh 14 mmol LiF and dissolve it in 15 mL deionized water. Stir it with a magnetic stirrer for 30 min. After it is completely dissolved, add it to the RE-EDTA complex and stir it for 30 min to form a white turbid solution. SA3: Pour the white turbid solution into a 40 mL reactor, seal it, and heat it in an oven at 180°C for 12 h. SA4: The solution obtained in step SA3 was cooled and centrifuged, and washed with deionized water and ethanol three times each, and filtered to obtain a white precipitate; the white precipitate was dried in an oven at 60°C for 12 hours to obtain tetragonal LiYF4:Er 3+ .

6. The non-contact temperature measurement method based on erbium-doped near-infrared long afterglow material according to claim 1, characterized in that: The ratio of the energy gap between erbium ion sublevels to the Boltzmann constant and the fitting constant A are obtained by the following method: SC1 uses an excitation source to optically excite the erbium-doped near-infrared long-lasting glow material system of the erbium-doped near-infrared long-lasting glow sensor module for 30 minutes. SC2 turns off the excitation source and uses a hot and cold stage to heat the erbium-doped near-infrared long afterglow sensor module from 298K to 448K. Every time the temperature rises by 10K, a light detector is used to collect and analyze the spectrum of the near-infrared light emitted by the erbium-doped near-infrared long afterglow material system. SC3 performs peak-wise Gaussian distribution fitting on the fluorescence intensity in the DS1, DS2, DS3, and DS4 bands of the infrared spectra collected at each temperature point, calculates the integrated ratio of fluorescence intensity (DS1+DS3) to (DS2+DS4) at each temperature point, and plots the integrated ratio of fluorescence intensity versus temperature T. SC4 utilizes formula Fitting the curves yields the ratio of the energy gap between the erbium ion sublevels to the Boltzmann constant. and the value of the fitting constant A.

7. The non-contact temperature measurement method based on erbium-doped near-infrared long afterglow material according to claim 6, characterized in that: The ratio of the energy gap between erbium ion sublevels to the Boltzmann constant and the fitting constant A are verified by the following method: SD1 heats the erbium-doped near-infrared long-afterglow sensor module placed on a hot and cold stage, raising the temperature of the erbium-doped near-infrared long-afterglow material system from 298K to 448K. A light detector is used to collect and analyze the spectrum of the near-infrared light emitted by the erbium-doped near-infrared long-afterglow material system every 10K increase. The erbium-doped near-infrared long-afterglow material system is continuously photoexcited throughout the entire heating process. SD2 performs peak-wise Gaussian distribution fitting on the fluorescence intensity in the DS1, DS2, DS3, and DS4 bands of the infrared spectra collected at each temperature point, calculates the integrated ratio of fluorescence intensity (DS1+DS3) to (DS2+DS4) at each temperature point, and plots the integrated ratio of fluorescence intensity versus temperature T. SD3 utilization formula Fitting the curves yields the ratio of the energy gap between the erbium ion sublevels to the Boltzmann constant. and the value of the fitting constant A′; The ratio of the energy gap between erbium ion sublevels measured by SD4 comparison excitation process to the Boltzmann constant The fitting constant A′ is the ratio of the energy gap between the erbium ion sublevels measured by the afterglow process to the Boltzmann constant. Deviation of the fitting constant A; determine whether the deviation is within the allowable threshold range: If yes, then the ratio of the energy gap between the erbium ion sublevels measured by the afterglow process to the Boltzmann constant is The fitting constant A has high reliability; If not, use right Make corrections and use A′ to correct A.

8. A non-contact temperature measurement system based on erbium-doped near-infrared long-afterglow material, comprising an excitation source, an erbium-doped near-infrared long-afterglow sensor module, a light detector, and a signal processor, characterized in that: The excitation source excites the erbium-doped near-infrared long-afterglow sensor module for a set time and then turns off. The erbium-doped near-infrared long-afterglow sensor module emits near-infrared light that couples the temperature information of the test point. The light detector collects and analyzes the spectrum of the near-infrared light and transmits the spectral information to the signal processor. The signal processor performs a peak-separated Gaussian distribution fit on the fluorescence intensity in the DS1, DS2, DS3, and DS4 bands of the infrared spectrum. Based on the integrated ratio of the fluorescence intensity (DS1+DS3) to (DS2+DS4), the temperature T of the test point is obtained: Where: I DS1 Represents the sub-energy level Y 4-7 →X 1-4 The intensity integral of the emission band, I DS2 Represents the sub-energy level Y 1-3 →X 1-4 The intensity integral of the emission band, I DS3 Represents the sub-energy level Y 4-7 →X 5-8 The intensity integral and I DS4 Represents the sub-energy level Y 1-3 →X 5-8 The intensity integral of the emission band, represents the ratio of the energy gap between the erbium ion sublevels to the Boltzmann constant; A is the fitting constant.

9. The non-contact temperature measurement system based on erbium-doped near-infrared long afterglow material according to claim 1, characterized in that: The ratio of the energy gap between erbium ion sublevels to the Boltzmann constant and the fitting constant A are obtained by the following method: SC1 uses an excitation source to optically excite the erbium-doped near-infrared long-lasting glow material system of the erbium-doped near-infrared long-lasting glow sensor module for 30 minutes. SC2 turns off the excitation source and uses a hot and cold stage to heat the erbium-doped near-infrared long afterglow sensor module from 298K to 448K. Every time the temperature rises by 10K, a light detector is used to collect and analyze the spectrum of the near-infrared light emitted by the erbium-doped near-infrared long afterglow material system. SC3 performs peak-wise Gaussian distribution fitting on the fluorescence intensity in the DS1, DS2, DS3, and DS4 bands of the infrared spectra collected at each temperature point, calculates the integrated ratio of fluorescence intensity (DS1+DS3) to (DS2+DS4) at each temperature point, and plots the integrated ratio of fluorescence intensity versus temperature T. SC4 utilizes formula Fitting the curves yields the ratio of the energy gap between the erbium ion sublevels to the Boltzmann constant. and the value of the fitting constant A.

10. The non-contact temperature measurement system based on erbium-doped near-infrared long afterglow material according to claim 9, characterized in that: The ratio of the energy gap between erbium ion sublevels to the Boltzmann constant and the fitting constant A are verified by the following method: SD1 heats the erbium-doped near-infrared long-afterglow sensor module placed on a hot and cold stage, raising the temperature of the erbium-doped near-infrared long-afterglow material system from 298K to 448K. A light detector is used to collect and analyze the spectrum of the near-infrared light emitted by the erbium-doped near-infrared long-afterglow material system every 10K increase. The erbium-doped near-infrared long-afterglow material system is continuously photoexcited throughout the entire heating process. SD2 performs peak-wise Gaussian distribution fitting on the fluorescence intensity in the DS1, DS2, DS3, and DS4 bands of the infrared spectra collected at each temperature point, calculates the integrated ratio of fluorescence intensity (DS1+DS3) to (DS2+DS4) at each temperature point, and plots the integrated ratio of fluorescence intensity versus temperature T. SD3 utilization formula Fitting the curves yields the ratio of the energy gap between the erbium ion sublevels to the Boltzmann constant. and the value of the fitting constant A′; The ratio of the energy gap between erbium ion sublevels measured by SD4 comparison excitation process to the Boltzmann constant The fitting constant A′ is the ratio of the energy gap between the erbium ion sublevels measured by the afterglow process to the Boltzmann constant. Deviation of the fitting constant A; determine whether the deviation is within the allowable threshold range: If yes, then the ratio of the energy gap between the erbium ion sublevels measured by the afterglow process to the Boltzmann constant is The fitting constant A has high reliability; If not, use right Make corrections and use A′ to correct A.

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