Diamond surface crystal orientation orientation device and orientation method
By combining the directional device of laser beam and illumination beam, the problems of low precision and high cost of diamond single crystal orientation in the prior art are solved, and low-cost and high-precision measurement of crystal direction and dislocation density are achieved, which is suitable for the growth and testing of semiconductor diamond single crystals.
Patent Information
- Application Number
- CN202510886722.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-06-30
- Publication Date
- 2025-08-15
AI Technical Summary
In the prior art, when determining the crystal direction of diamond single crystal, an expensive X-ray single crystal orientation instrument is required, and the orientation accuracy is not high and time-consuming, so it is impossible to measure samples that are too small.
Using a directional device combining laser beam and illumination beam, the crystal direction and dislocation density of the diamond sample are determined through the adjustment of the sample stage.
It realizes low-cost and high-precision diamond single crystal orientation, which can quickly obtain dislocation density and crystal direction, and is suitable for semiconductor diamond single crystal growth and testing.
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Figure CN120490103A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the technical field of crystal orientation determination of diamond crystals, and in particular to an orienting device and method for orienting the crystal orientation of a diamond surface. Background Art
[0002] Determining the crystal orientation of diamond single crystals is crucial in the research and production of semiconductor diamond material growth and crystal property characterization. It affects the quality of the epitaxial layer of the diamond single crystal used as a substrate during subsequent growth, the orientation of the diamond crystal during material processing processes such as diamond grinding, polishing, and laser cutting, and the performance of semiconductor diamond devices. X-ray diffraction is often used to determine the crystal orientation of diamond single crystal surfaces. This method requires a relatively expensive X-ray single crystal orientation instrument and has disadvantages such as low orientation accuracy, long time consumption, and the inability to measure very small samples. Summary of the Invention
[0003] In view of the above problems, embodiments of the present disclosure provide a device and method for orienting the crystal orientation of a diamond surface.
[0004] One aspect of the present disclosure provides a device for orienting the crystal orientation of a diamond surface, comprising: a sample stage for placing a diamond sample and adjusting the position of the diamond sample; a laser beam emitting group for emitting a target laser beam; an illumination beam emitting group for emitting a target illumination beam; a microscope objective for receiving the target laser beam and the target illumination beam, and emitting the target laser beam and the target illumination beam to the diamond sample; a laser beam imaging group for receiving the target laser beam reflected back by the diamond sample and processing the target laser beam to obtain a laser imaging of the bottom surface of an etched pit of the diamond sample; an illumination beam imaging group for receiving the target illumination beam reflected back by the microscope objective and processing the target illumination beam to obtain an illumination imaging of the surface of the diamond sample; and a computing device for determining the crystal orientation of the diamond sample based on the laser imaging and the illumination imaging.
[0005] According to an embodiment of the present disclosure, the directing device also includes: a first beam splitter, a second beam splitter and a third beam splitter; wherein the first beam splitter is arranged between the microscope objective and the laser beam imaging group, and is used to transmit the target laser beam in the direction of the microscope objective or the laser beam imaging group, or to transmit the illumination beam in the direction of the microscope objective or the second beam splitter; the second beam splitter is arranged between the first beam splitter and the laser beam imaging group, and is used to transmit the laser beam in the direction of the laser beam imaging group, or to transmit the illumination beam in the direction of the first beam splitter or the third beam splitter; the third beam splitter is arranged between the second beam splitter and the illumination beam emitting group, and is used to transmit the illumination beam in the direction of the second beam splitter or the illumination beam imaging group.
[0006] According to an embodiment of the present disclosure, the laser beam emitting group includes: a laser for emitting an initial laser beam; a laser beam expander for expanding the diameter of the initial laser beam to obtain a large-diameter laser beam; and a laser focusing lens for converging the large-diameter laser beam to obtain a target laser beam.
[0007] According to an embodiment of the present disclosure, the laser beam imaging group includes: a laser imaging lens and a laser imaging device; wherein the laser imaging lens is used to focus the target laser beam onto the laser imaging device; and the laser imaging device is used to obtain laser imaging according to the target laser beam.
[0008] According to an embodiment of the present disclosure, the laser imaging device is provided with a first filter, which is used to filter the illumination light beam.
[0009] According to an embodiment of the present disclosure, the illumination beam emitting group includes: an illumination light source for emitting an initial illumination beam; and an illumination lens group for collimating the initial illumination beam to obtain a target illumination beam.
[0010] According to an embodiment of the present disclosure, the illumination beam imaging group includes: an illumination imaging lens and an illumination imaging device; wherein the illumination imaging lens is used to focus the illumination beam onto the illumination imaging device; and the illumination imaging device is used to obtain illumination imaging according to the illumination beam.
[0011] According to an embodiment of the present disclosure, the illumination imaging device is provided with a second filter, and the second filter is used to filter the laser beam.
[0012] According to an embodiment of the present disclosure, the operating wavelengths of the laser beam emitting group and the illumination beam emitting group are different.
[0013] Another aspect of the present disclosure provides a method for orienting the crystal orientation of a diamond surface, comprising: providing a diamond sample and placing the diamond sample on a sample stage, wherein the surface of the diamond sample has a plurality of dislocation etch pits; utilizing a laser beam emission group and an illumination beam group to emit a target laser beam and a target illumination beam to a microscope objective lens, respectively; utilizing the microscope objective lens to emit the target laser beam and the target illumination beam to the diamond sample on the sample stage; utilizing a laser beam imaging group and an illumination beam imaging group to receive the target laser beam and the target illumination beam reflected back from the diamond sample and the microscope objective lens, respectively; utilizing a laser beam imaging group and an illumination beam imaging group to process the reflected target laser beam and the target illumination beam to obtain a laser image of the bottom surface of the etch pit of the diamond sample and an illumination image of the surface of the diamond sample; and utilizing a computing device to determine the crystal orientation of the diamond sample based on the laser image and the illumination image.
[0014] The device and method for orienting the crystal orientation of the diamond surface provided in the embodiments of the present disclosure can obtain the dislocation density and crystal orientation of the diamond single crystal by adjusting the sample stage, observing and calculating the laser imaging formed by the laser beam and the reflected imaging formed by the illumination beam. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] The above contents and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:
[0016] Figure 1 Schematically shows the structure of a device for orienting the crystal orientation of a diamond surface according to an embodiment of the present disclosure;
[0017] Figure 2 A schematic diagram schematically illustrates the adjustment direction of the sample stage according to an embodiment of the present disclosure;
[0018] Figure 3 A diagram schematically illustrates the position of laser image points in a laser imaging device according to an embodiment of the present disclosure;
[0019] Figure 4 The flowchart of the method for orienting the crystal orientation of a diamond surface according to an embodiment of the present disclosure is schematically shown. DETAILED DESCRIPTION
[0020] In order to make the objectives, technical solutions and advantages of the present disclosure more clearly understood, the present disclosure is further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0021] It should be noted that in the drawings or descriptions of the specification, similar or identical parts use the same figure numbers. The technical features in the various embodiments exemplified in the specification can be freely combined to form new solutions without conflict. In addition, each claim can be used as an embodiment alone or the technical features in each claim can be combined as a new embodiment. In the drawings, the shape or thickness of the embodiment can be expanded and simplified or conveniently indicated. Furthermore, the elements or implementations not shown or described in the drawings are forms known to ordinary technicians in the relevant technical field. In addition, although this article may provide demonstrations of parameters containing specific values, it should be understood that the parameters do not need to be exactly equal to the corresponding values, but can be approximated to the corresponding values within an acceptable error tolerance or design constraint.
[0022] Unless there are technical obstacles or contradictions, the above-mentioned various embodiments of the present disclosure can be freely combined to form additional embodiments, and these additional embodiments are all within the protection scope of the present disclosure.
[0023] Although the present disclosure is described in conjunction with the accompanying drawings, the embodiments disclosed in the drawings are intended to illustrate preferred embodiments of the present disclosure and are not to be construed as limiting the present disclosure. The dimensional ratios in the drawings are merely illustrative and are not to be construed as limiting the present disclosure.
[0024] Although some embodiments of the present general inventive concept have been shown and described, it will be appreciated by those skilled in the art that changes may be made to these embodiments without departing from the principles and spirit of the present general inventive concept, the scope of which is defined in the claims and their equivalents.
[0025] Figure 1 The structure of the device for orienting the crystal orientation of the diamond surface according to an embodiment of the present disclosure is schematically shown.
[0026] like Figure 1 As shown, an embodiment of the present disclosure provides an orienting device for the crystal orientation of a diamond surface, comprising: a sample stage 1 for placing a diamond sample 2 and adjusting the position of the diamond sample 2; a laser beam emitting group 4 for emitting a target laser beam; an illumination beam emitting group 8 for emitting a target illumination beam; a microscope objective 3 for receiving a target laser beam and a target illumination beam, and emitting the target laser beam and the target illumination beam to the diamond sample 2; a laser beam imaging group 7 for receiving the target laser beam reflected back by the diamond sample 2 and processing the target laser beam to obtain a laser imaging of the bottom surface of the etched pit of the diamond sample 2; an illumination beam imaging group 10 for receiving the target illumination beam reflected back by the microscope objective 3 and processing the target illumination beam to obtain an illumination imaging of the surface of the diamond sample 2; and a computing device 11 for determining the crystal orientation of the diamond sample 2 based on the laser imaging and the illumination imaging.
[0027] The device for determining the crystal orientation of a diamond surface, provided in embodiments of the present disclosure, simultaneously determines the dislocation density and crystal orientation of a diamond single crystal by adjusting the sample stage to observe and calculate the laser image formed by the laser beam and the reflected image formed by the illumination beam. The device, in embodiments of the present disclosure, offers advantages such as accurate orientation, rapid operation, and low equipment cost. The device, capable of simultaneously determining both dislocation density and crystal orientation, has broad application prospects in the growth and testing of semiconductor diamond single crystals.
[0028] Figure 2 A schematic diagram schematically illustrates the adjustment direction of the sample stage according to an embodiment of the present disclosure.
[0029] In some embodiments, as Figure 2 As shown, the sample stage 1 has three-dimensional linear adjustment functions in X, Y, and Z, as well as two-dimensional angular adjustment functions in θ and φ. This means that the position of the diamond sample 2 in three dimensions can be adjusted, and it can be flipped at a specific angle. Adjustment of the sample stage 1 can be manual or automatic.
[0030] Diamond sample 2 is a sample to be tested. The crystal orientation of the upper surface 201 of the sample is determined by obtaining the deflection angle of the crystal orientation of the upper surface 201 of the sample relative to the adjacent crystal plane (100), (110) or (111).
[0031] According to an embodiment of the present disclosure, the laser beam emitting group 4 includes: a laser 41 for emitting an initial laser beam; a laser beam expander 42 for expanding the diameter of the initial laser beam to obtain a large-diameter laser beam; and a laser focusing lens 43 for converging the large-diameter laser beam to obtain a target laser beam.
[0032] According to an embodiment of the present disclosure, the illumination beam emitting group 8 includes: an illumination light source 81 for emitting an initial illumination beam; and an illumination lens group 82 for collimating the initial illumination beam to obtain a target illumination beam.
[0033] In some embodiments, laser 41 can emit a parallel initial laser beam, which can then enter laser beam expander 42. Laser beam expander 42 is used to receive the initial laser beam emitted by laser 41 and, after passing through internal optical elements, expand the diameter of the initial laser beam while maintaining a parallel laser beam to obtain a large-diameter laser beam. Laser focusing lens 43 is used to converge the large-diameter laser beam emitted by laser beam expander 42 to obtain a target laser beam.
[0034] In some embodiments, the illumination light source 81 may emit a divergent initial illumination beam, which then enters the illumination lens group 82. The illumination lens group 82 is configured to collimate the divergent initial illumination beam to form a parallel target illumination beam.
[0035] According to an embodiment of the present disclosure, the orientation device also includes: a first beam splitter 5, a second beam splitter 6 and a third beam splitter 9; wherein the first beam splitter 5 is arranged between the microscope objective 3 and the laser beam imaging group 7, and is used to transmit the target laser beam in the direction of the microscope objective 3 or the laser beam imaging group 7, or to transmit the illumination beam in the direction of the microscope objective 3 or the second beam splitter 6; the second beam splitter 6 is arranged between the first beam splitter 5 and the laser beam imaging group 7, and is used to transmit the laser beam in the direction of the laser beam imaging group 7, or to transmit the illumination beam in the direction of the first beam splitter 5 or the third beam splitter 9; the third beam splitter 9 is arranged between the second beam splitter 6 and the illumination beam emitting group 8, and is used to transmit the illumination beam in the direction of the second beam splitter 6 or the illumination beam imaging group 10.
[0036] Please continue reading Figure 1 The first beam splitter 5 can be positioned between the microscope objective 3 and the laser beam imaging group 7. In some embodiments, the laser beam emitting group 4 first emits a target laser beam, which is then reflected downward by the first beam splitter 5 into the microscope objective 3. The microscope objective 3 then converts the focused laser beam reflected from the target laser beam into a parallel laser beam, which is then irradiated onto the surface of the diamond sample 2. The parallel laser beam reflected from the bottom surface of the defective etched pit on the surface of the diamond sample 2 passes through the microscope objective 3 and then through the first beam splitter 5 toward the second beam splitter 6.
[0037] The second beam splitter 6 is disposed between the first beam splitter 5 and the laser beam imaging group 7. In some embodiments, after receiving the parallel laser beam transmitted from the first beam splitter 5, the second beam splitter 6 transmits it to the laser imaging group 7. The laser imaging group 7 then processes the parallel laser beam to obtain a laser image of the bottom surface of the etched pit of the diamond sample 2, thus completing the transmission of the laser beam.
[0038] The third beam splitter 9 is disposed between the second beam splitter 6 and the illumination beam emitting group 8. In some embodiments, the target illumination beam is first emitted by the illumination beam emitting group 8, and passes through the third beam splitter 9, the second beam splitter 6, and the first beam splitter 5 in sequence to enter the microscope objective 3. The target illumination beam returning from the microscope objective 3 passes through the first beam splitter 5 and the second beam splitter 6, and is reflected by the third beam splitter to enter the illumination beam imaging group 10. The illumination beam imaging group 10 then processes the target illumination beam to obtain an illumination image of the surface of the diamond sample 2, thus completing the transmission of the illumination beam.
[0039] The first beam splitter 5 can have a beam splitting ratio of 1:1 for the laser beam, and a transmittance of greater than 90% for the illumination light source. The second beam splitter 6 can have a beam splitting ratio of 1:1 for the illumination light source, and a transmittance of greater than 90% for the laser beam. The third beam splitter has a beam splitting ratio of 1:1 for the illumination light source.
[0040] By setting up a beam splitter, it is possible to transmit different light beams along the same line. Moreover, the transmission path of the light beam can be changed, thus avoiding complex optical path design and facilitating device preparation.
[0041] Figure 3 The figure schematically shows the position of the laser image point in the laser imaging device according to an embodiment of the present disclosure.
[0042] According to an embodiment of the present disclosure, the laser beam imaging group 7 includes: a laser imaging lens 71 and a laser imaging device 72; wherein the laser imaging lens 71 is used to focus the target laser beam onto the laser imaging device 72; the laser imaging device 72 is used to obtain laser imaging according to the target laser beam.
[0043] According to an embodiment of the present disclosure, the laser imaging device 72 is provided with a first filter, which is used to filter the illumination light beam.
[0044] In some embodiments, a parallel target laser beam reflected from the bottom surface of a defective etched pit on the surface of the diamond sample 2 passes through the microscope objective lens 3, sequentially transmits through the first beam splitter 5 and the second beam splitter 6, and is collected by the laser imaging lens 71 and imaged onto the laser imaging device 72. The laser imaging device 72 may be a laser imaging CCD camera, which is used to capture the laser image of the bottom surface of the defective etched pit on the surface of the diamond sample 2 obtained by the laser imaging lens 71. In addition, a filter is provided within the laser imaging CCD camera, so that the laser imaging CCD camera can only measure the laser beam and has no response to the illumination light source.
[0045] like Figure 3 As shown, there is a cross mark in the field of view of the laser imaging CCD camera. If the target laser beam returns exactly along the original path from the surface of the diamond sample 2 (i.e., the target laser beam is exactly perpendicular to the surface of the diamond sample 2), the imaging point of the target laser beam is exactly located at the center of the cross mark (e.g., Figure 3 As shown in the left figure). If the target laser beam returns from other paths on the surface of diamond sample 2, its imaging point will be located at the outer end of the center position of the cross mark (such as Figure 3 (as shown in the figure on the right).
[0046] According to an embodiment of the present disclosure, the illumination beam imaging group 10 includes: an illumination imaging lens 101 and an illumination imaging device 102; wherein the illumination imaging lens 101 is used to focus the illumination beam onto the illumination imaging device 102; the illumination imaging device 102 is used to obtain illumination imaging according to the illumination beam.
[0047] According to an embodiment of the present disclosure, the illumination imaging device 102 is provided with a second filter, and the second filter is used to filter the laser beam.
[0048] In some embodiments, the target illumination beam returning from the microscope objective lens 3 is reflected by the third beam splitter 9 and then enters the illumination imaging lens 101, where it is imaged onto the illumination imaging device 102. The illumination imaging device 102 may be an illumination imaging CCD camera, which is used to capture the illumination image of the surface of the diamond sample 2 obtained by the illumination imaging lens 101. Furthermore, a filter is provided within the illumination imaging CCD camera, which allows it to measure only the illumination light source and does not respond to the laser beam.
[0049] According to an embodiment of the present disclosure, the operating wavelengths of the laser beam emitting group 4 and the illumination beam emitting group 8 are different.
[0050] In some embodiments, the operating wavelengths of beam emitting group 4 and illumination beam emitting group 8 are different, i.e., the wavelengths of the target laser beam and the target illumination beam do not overlap. In the diamond surface crystal orientation device of this embodiment, multiple light sources are provided. If the wavelengths of the multiple light sources overlap, it will be difficult for the receiving end to distinguish the light sources, resulting in crosstalk.
[0051] In this embodiment, the laser beam emitting group 4 and the illumination beam emitting group 8 are set to different operating wavelengths, so that no interference occurs between the target laser beam and the target illumination beam, thereby avoiding crosstalk.
[0052] Figure 4 The flowchart of the method for orienting the crystal orientation of a diamond surface according to an embodiment of the present disclosure is schematically shown.
[0053] Based on the diamond surface crystal orientation device disclosed in the above embodiment, the present invention also provides a diamond surface crystal orientation method, which will be combined with Figure 4 The method is described in detail.
[0054] The embodiment of the present disclosure further provides a method for orienting the crystal orientation of a diamond surface, including operations S410 to S460.
[0055] In operation S410 , a diamond sample is provided and placed on a sample stage, wherein a surface of the diamond sample has a plurality of dislocation etching pits.
[0056] In operation S420, a target laser beam and a target illumination beam are emitted to a microscope objective lens using the laser beam emission group and the illumination beam group, respectively.
[0057] In operation S430, a target laser beam and a target illumination beam are emitted to the diamond sample on the sample stage using a microscope objective lens.
[0058] In operation S440 , a laser beam imaging group and an illumination beam imaging group are used to receive the target laser beam and the target illumination beam reflected from the diamond sample and the microscope objective lens, respectively.
[0059] In operation S450 , the reflected target laser beam and target illumination beam are processed respectively to obtain laser imaging of the bottom surface of the etched pit of the diamond sample and illumination imaging of the surface of the diamond sample.
[0060] In operation S460 , a computing device is used to determine the crystal orientation of the diamond sample based on the laser imaging and the illumination imaging.
[0061] In the measurement of diamond dislocation density in the embodiment of the present disclosure, a method of plasma dry etching combined with microscopic counting is used to calculate the dislocation density by plasma etching the dislocation etch pits obtained on the diamond surface. In the method of the embodiment of the present disclosure, the bottom angle of the dislocation etch pit is the same as the deflection angle of the adjacent crystal plane (commonly used are (100), (110) or (111)). Therefore, the deflection angle of the diamond single crystal surface relative to the adjacent crystal plane (100), (110) or (111) can be determined by measuring the bottom angle of the dislocation etch pit, that is, the crystal orientation is achieved.
[0062] In some embodiments, the diamond sample may be etched before operation S410. The etching may be performed by placing the diamond single crystal sample in a plasma chamber and etching for 10-30 minutes in a hydrogen and oxygen environment to form dislocation etching pits on the diamond surface.
[0063] Afterward, the optical path can be calibrated. For example, a plane mirror with the same thickness as the diamond sample can be placed on the sample stage as a standard sample. Using the sample stage's three-dimensional linear adjustment functions (X, Y, and Z) and two-dimensional angular adjustment functions (θ and φ), a clear image is obtained on the illumination imaging CCD camera in the illumination beam imaging group, with the laser image point positioned precisely at the intersection of the crosshairs within the laser imaging CCD camera's field of view. At this point, the θ and φ angle values are recorded as θ1 and φ1.
[0064] After etching and calibration are complete, the plane mirror is removed and the diamond sample to be measured is placed on the sample stage, with one side of the diamond sample parallel to the X-axis. Once the sample is placed, the dislocation etch pits on the surface of the diamond sample can be observed on the illumination imaging CCD camera. Simultaneously, the laser image points emitted from the bottom surface of the dislocation etch pits can be seen within the field of view of the laser imaging CCD camera in the laser imaging group.
[0065] At this time, if the dislocation etch pit observed on the illumination imaging CCD camera is a near-square, then the adjacent crystal plane is the (100) crystal plane. If the dislocation etch pit observed on the illumination imaging CCD camera is a near-rectangular, then the adjacent crystal plane is the (110) crystal plane. If the dislocation etch pit observed on the illumination imaging CCD camera is a near-triangular, then the adjacent crystal plane is the (111) crystal plane.
[0066] Then, using the sample stage's three-dimensional linear adjustment functions (X, Y, and Z) and two-dimensional angular adjustment functions (θ and φ), return the laser image point to the intersection of the crosshairs within the laser imaging CCD camera's field of view. At this point, note the angles of θ and φ, recording them as θ2 and φ2.
[0067] Finally, calculate the deflection angle. The calculation of the deflection angle is shown in formula (1):
[0068] (1)
[0069] Wherein, θ1 and φ1 are the angle values of θ and φ mentioned above, which correspond to the laser image point being exactly at the center of the cross mark in the field of view of the laser imaging CCD camera. θ2 and φ2 are the angle values of θ and φ mentioned above, which correspond to the laser image point returning to the center of the cross mark in the field of view of the laser imaging CCD camera.
[0070] The method of the embodiment of the present disclosure can be used to determine the crystal orientation of a diamond single crystal surface adjacent to the crystal plane (100), (110), or (111) and with a deviation angle of no more than 10°. Furthermore, the crystal orientation accuracy of the diamond single crystal surface determined using the method of this embodiment can be better than 0.05°.
[0071] The method in this embodiment can obtain the size of the deviation angle of the diamond single crystal surface relative to the adjacent crystal plane (100), (110) or (111) by imaging the reflection position of the bottom surface of the defective etching pit formed by the laser on the sample surface and adjusting the two-dimensional angle of the sample stage.
[0072] It should be noted that the details not covered in the method embodiment section are similar to those in the device embodiment section. Please refer to the device embodiment section and no further details will be given here.
[0073] It should be understood that the specific order or hierarchy of steps in the disclosed processes is an example of an exemplary method. Based on design preferences, it should be understood that the specific order or hierarchy of steps in the process can be rearranged without departing from the scope of the present disclosure. The accompanying method claims present elements of the various steps in an exemplary order and are not intended to be limited to a specific order or hierarchy.
[0074] It should also be noted that directional terms such as "upper," "lower," "front," "back," "left," and "right" mentioned in the embodiments are merely references to the directions in the accompanying drawings and are not intended to limit the scope of protection of this disclosure. Throughout the drawings, identical elements are represented by identical or similar reference numerals. Conventional structures or configurations that may cause confusion in understanding this disclosure will be omitted. Furthermore, the shapes, sizes, and positional relationships of the components in the drawings do not reflect their actual sizes, proportions, or actual positional relationships.
[0075] In the foregoing detailed description, various features are grouped together in a single embodiment to simplify the disclosure. This method of disclosure should not be interpreted as reflecting an intention that embodiments of the claimed subject matter require more features than are expressly recited in each claim. On the contrary, as reflected in the appended claims, the disclosure comprises less than all features of any individual disclosed embodiment. The appended claims are therefore hereby expressly incorporated into the detailed description, with each claim standing on its own as a separate preferred embodiment of the disclosure.
[0076] In addition, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. With respect to the term "comprising" used in the specification or claims, the word is covered in a manner similar to the term "including", as explained in terms of "including" used as a transitional word in the claims. Any term "or" used in the specification of the claims is intended to mean "non-exclusive or".
[0077] The specific embodiments described above further illustrate the purpose, technical solutions and beneficial effects of the present disclosure. It should be understood that the above are only specific embodiments of the present disclosure and are not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure should be included in the scope of protection of the present disclosure.
Claims
1. A device for orienting the crystal orientation of a diamond surface, characterized in that: include: A sample stage (1) for placing a diamond sample (2) and adjusting the position of the diamond sample (2); A laser beam emitting group (4), used for emitting a target laser beam; An illumination beam emitting group (8), used for emitting a target illumination beam; a microscope objective lens (3) for receiving the target laser beam and the target illumination beam, and emitting the target laser beam and the target illumination beam to the diamond sample (2); a laser beam imaging group (7) for receiving the target laser beam reflected back by the diamond sample (2) and processing the target laser beam to obtain a laser imaging of the bottom surface of the etched pit of the diamond sample (2); an illumination beam imaging group (10) for receiving the target illumination beam reflected back by the microscope objective lens (3) and processing the target illumination beam to obtain an illumination image of the surface of the diamond sample (2); A calculation device (11) is used to determine the crystal orientation of the diamond sample (2) based on the laser imaging and the illumination imaging.
2. The orientation device according to claim 1, characterized in that The orientation device further comprises: a first beam splitter (5), a second beam splitter (6) and a third beam splitter (9); The first beam splitter (5) is arranged between the microscope objective lens (3) and the laser beam imaging group (7), and is used to transmit the target laser beam in the direction of the microscope objective lens (3) or the laser beam imaging group (7), or to transmit the illumination beam in the direction of the microscope objective lens (3) or the second beam splitter (6); The second beam splitter (6) is arranged between the first beam splitter (5) and the laser beam imaging group (7), and is used to transmit the laser beam in the direction of the laser beam imaging group (7), or to transmit the illumination beam in the direction of the first beam splitter (5) or the third beam splitter (9); The third beam splitter (9) is arranged between the second beam splitter (6) and the illumination beam emission group (8), and is used to transmit the illumination beam in the direction of the second beam splitter (6) or the illumination beam imaging group (10).
3. The orientation device according to claim 1, characterized in that The laser beam emission group (4) comprises: a laser (41) for emitting an initial laser beam; A laser beam expander (42) is used to expand the diameter of the initial laser beam to obtain a large-diameter laser beam; The laser focusing lens (43) is used to converge the large-diameter laser beam to obtain the target laser beam.
4. The orientation device according to claim 1, characterized in that The laser beam imaging group (7) comprises: a laser imaging lens (71) and a laser imaging device (72); Wherein, the laser imaging lens (71) is used to focus the target laser beam onto the laser imaging device (72); The laser imaging device (72) is used to obtain the laser imaging according to the target laser beam.
5. The orientation device according to claim 4, characterized in that The laser imaging device (72) is provided with a first filter, and the first filter is used to filter the illumination light beam.
6. The orientation device according to claim 1, characterized in that The illumination light beam emission group (8) comprises: an illumination light source (81), configured to emit an initial illumination light beam; The illumination lens group (82) is used to collimate the initial illumination light beam to obtain the target illumination light beam.
7. The orientation device according to claim 1, characterized in that The illumination beam imaging group (10) comprises: an illumination imaging lens (101) and an illumination imaging device (102); Wherein, the illumination imaging lens (101) is used to focus the illumination light beam onto the illumination imaging device (102); The illumination imaging device (102) is used to obtain the illumination imaging according to the illumination light beam.
8. The orientation device according to claim 7, characterized in that The illumination imaging device (102) is provided with a second filter, and the second filter is used for filtering the laser beam.
9. The orientation device according to claim 1, characterized in that The laser beam emission group (4) and the illumination beam emission group (8) have different operating wavelengths.
10. A method for orienting the crystal orientation of a diamond surface, characterized in that: include: Providing a diamond sample and placing the diamond sample on a sample stage, wherein the surface of the diamond sample has a plurality of dislocation etching pits; Utilizing the laser beam emission group and the illumination beam group, the target laser beam and the target illumination beam are emitted to the microscope objective lens respectively; emitting the target laser beam and the target illumination beam to the diamond sample on the sample stage using the microscope objective lens; Using a laser beam imaging group and an illumination beam imaging group to receive the target laser beam and the target illumination beam reflected back by the diamond sample and the microscope objective lens respectively; processing the reflected target laser beam and the target illumination beam respectively to obtain a laser image of the bottom surface of the etched pit of the diamond sample and an illumination image of the surface of the diamond sample; The crystal orientation of the diamond sample is determined according to the laser imaging and the illumination imaging by using a computing device.