Measurement system and method for sample to be measured

Abstract

The invention relates to the technical field of chip measurement, in particular to a system and method for measuring a to-be-measured sample, and the system comprises a rotary workpiece table for bearing the to-be-measured sample, an X-ray source for emitting X-rays to the to-be-measured sample, and a detector for receiving an X-ray signal. According to the invention, the X-ray source is shared and the X-ray source is matched with the detector, so that T-SAXS measurement and GI-SAXS measurement share a path, and then T-SAXS measurement, GI-SAXS measurement and combined measurement of T-SAXS and GI-SAXS are completed by one system, so that the measurement efficiency is effectively improved, and the measurement accuracy of a to-be-measured sample with a high aspect ratio structure is improved.

Description

Technical Field

[0001] The present invention belongs to the field of chip measurement technology, and in particular relates to a measurement system and method for a sample to be measured. Background Art

[0002] Among the methods for non-destructive measurement of chips with high aspect ratios, transmission small-angle X-ray scattering (T-SAXS) is one feasible measurement technology. Its basic principle is that a monochromatic, nearly parallel X-ray beam penetrates the periodic structure of the sample to be measured. The detector records the periodic structure to generate an X-ray scattering signal, and the three-dimensional structure of the sample to be measured is inferred from the scattering signal image. In T-SAXS technology, due to the good penetrability of the short X-ray wavelength, it can penetrate structures with high aspect ratios. In addition, the generated X-ray scattering signal is positively correlated with the depth of the measured structure, and deeper structures correspond to stronger measurement scattering signals. However, since the shape factor F(q) of the sample to be measured is determined by the scattering vector q and the spatial position vector r, as shown in the following formula: ; Among them, the spatial position vector r is related to the lateral key dimensions of the deep hole or long deep hole structure (i.e., the aperture, length, width and inclination of the deep hole, etc.). The material properties and stacking thickness of the sample to be tested will cause changes in the detection signal intensity. Therefore, the T-SAXS technology itself cannot effectively distinguish between material properties and stacking thickness; in addition, due to the inaccurate calibration of the stacking thickness of the sample to be tested, the lateral key dimensions of the deep hole or long deep hole structure of the sample to be tested (such as aperture, length, width, inclination, etc.) will be inaccurately measured.

[0003] The basic principle of grazing-incidence small-angle X-ray scattering (GI-SAXS) is that a monochromatic, nearly parallel X-ray beam strikes the sample at a slight angle of incidence, and the detector records the signal scattered by the reflected small-angle X-rays. The film thickness and material properties of the sample can be inferred from the scattering signal obtained by the detector.

[0004] Currently, T-SAXS and GI-SAXS are two independent technologies, implemented on two separate devices. This requires two sets of measurement equipment, significantly increasing measurement costs. If the same sample is measured sequentially on a T-SAXS and then a GI-SAXS device, measurement efficiency will be significantly reduced. Switching between devices introduces errors in positioning and measurement angles and attitudes, negatively impacting measurement accuracy. Summary of the Invention

[0005] In view of this, the present invention aims to provide a measurement system and method for samples to be tested, by setting up a common path for T-SAXS measurement and GI-SAXS measurement, so that one system can complete T-SAXS measurement, GI-SAXS measurement, and joint measurement of T-SAXS and GI-SAXS, effectively improving the measurement efficiency and the measurement accuracy of samples to be tested with high aspect ratio structures.

[0006] To achieve the above object, the technical solution created by the present invention is implemented as follows: A measurement system for a sample to be measured comprises: a rotating workpiece stage, which carries the sample to be measured on an X-ray source and emits X-rays toward the sample to be measured; a detector, which receives X-rays scattered by the sample to be measured at a first preset angle and obtains a corresponding first detection signal, and receives X-rays scattered by the sample to be measured at a second preset angle and obtains a corresponding second detection signal; the first preset angle is an angle at which grazing-incidence small-angle X-ray scattering occurs between the X-rays and the sample to be measured, and the second preset angle is an angle at which transmission small-angle X-ray scattering occurs between the X-rays and the sample to be measured.

[0007] In some embodiments, a data processor is also included; the data processor processes the first detection signal to obtain the film thickness and material properties of the sample to be tested, and the data processor processes the second detection signal, the film thickness and material properties to obtain the deep hole size and deep hole inclination of the deep hole in the sample to be tested.

[0008] In some embodiments, the data processor processes the first detection signal to obtain the film thickness and material properties of the sample to be tested, including: inputting the first detection signal into the first measurement model of the data processor to obtain the film thickness and material properties; the data processor processes the second detection signal, the film thickness and material properties to obtain the deep hole size and deep hole inclination, including: inputting the second detection signal, the film thickness and material properties into the second measurement model of the data processor to obtain the deep hole size and deep hole inclination.

[0009] In some embodiments, the first measurement model is a GI-SAXS measurement model, and the second measurement model is a T-SAXS measurement model.

[0010] In some embodiments, when the sample to be tested is at a first preset angle, the detector moves to a first measurement position and obtains a first detection signal; when the sample to be tested is at a second preset angle, the detector moves to a second measurement position and obtains a second detection signal.

[0011] In some embodiments, the X-ray source is a liquid metal X-ray source or a high brightness rotating anode target X-ray source.

[0012] In some embodiments, a monochromator is provided between the X-ray source and the rotating workpiece stage, and the monochromator performs monochromatization and beam shaping on the X-rays.

[0013] In some embodiments, a front optical path is provided between the monochromator and the rotating workpiece stage; the front optical path includes: a slit component, which collimates and controls the spot size of the X-rays from the monochromator; an X-ray switch, which controls the X-rays from the slit component to be irradiated onto the sample to be measured; a first vacuum system, which transmits the X-rays emitted from the X-ray switch to the sample to be measured; a rear optical path is provided between the rotating workpiece stage and the detector; the rear optical path includes a second vacuum system, which transmits the X-rays scattered by the sample to be measured to the detector.

[0014] A method for measuring a sample to be measured comprises: using an X-ray source to emit X-rays toward the sample to be measured; adjusting a rotating workpiece stage so that a plurality of first preset angles are formed between the X-rays emitted by the X-ray source and the sample to be measured, and then using a detector to receive X-rays scattered by the sample to be measured at the plurality of first preset angles to obtain a corresponding plurality of first detection signals; and further adjusting the rotating workpiece stage so that a plurality of second preset angles are formed between the X-rays and the sample to be measured, and then using the detector to receive X-rays scattered by the sample to be measured at the plurality of second preset angles to obtain a corresponding plurality of second detection signals.

[0015] In some embodiments, the method further includes: obtaining film thickness and material properties based on multiple sets of first detection signals; and obtaining deep hole size and deep hole inclination of the deep holes in the sample to be tested based on multiple sets of second detection signals, film thickness and material properties.

[0016] In some embodiments, obtaining film thickness and material properties based on multiple sets of first detection signals includes: inputting the multiple sets of first detection signals into a first measurement model to obtain film thickness and material properties.

[0017] In some embodiments, the first measurement model is: ; ; ; in, represents the scattering intensity obtained by the first detection signal, represents the shape factor of the sample to be measured in the first measurement model, represents the periodic distribution of the sample to be measured in the first measurement model, ρ represents the material properties, q represents the scattering vector, Indicates the film thickness, represents the periodic variation of the scattering vector q, x represents the spatial position vector, and i represents the imaginary part.

[0018] In some embodiments, the deep hole size and deep hole inclination are obtained based on multiple sets of second detection signals, film thickness and material properties, including: inputting the film thickness, material properties and multiple sets of second detection signals into a second measurement model to obtain the deep hole size and deep hole inclination.

[0019] In some embodiments, the second measurement model is: ; in, represents the scattering intensity obtained by the second detection signal, represents the shape factor of the sample to be measured in the second measurement model, represents the periodic distribution of the sample to be tested in the second measurement model, ρ represents the material property, n represents the number of stacked layers of the sample to be tested, thk represents the film thickness, and the deep hole size and deep hole inclination are derived from the shape factor Obtained by fitting.

[0020] Compared with the prior art, the present invention can achieve the following beneficial effects: (1) In the measurement system and method of the sample to be measured created by the present invention, a common X-ray source is used, and the rotating workpiece stage drives the sample to be measured to an angle that satisfies T-SAXS measurement and GI-SAXS measurement. The cooperation of the X-ray source, the rotating workpiece stage and the detector completes T-SAXS measurement, GI-SAXS measurement and combined measurement of T-SAXS and GI-SAXS on the sample to be measured, effectively improving the measurement efficiency and avoiding the introduction of errors such as positioning and measurement posture when switching between different devices; (2) In the measurement system and method of the sample to be measured created by the present invention, GI-SAXS measurement and T-SAXS measurement are effectively combined, that is, GI-SAXS measurement is first performed to calculate the film thickness and material properties of the sample to be measured, and the film thickness and material properties of the sample to be measured are taken as known, and the deep hole size and deep hole inclination of the sample to be measured are obtained in combination with the T-SAXS measurement results. This effectively avoids the situation where only using the T-SAXS measurement signal leads to the inability to effectively distinguish material properties and stacking thickness, and thus leads to inaccurate measurement of deep hole size and deep hole inclination, thereby further improving the measurement efficiency and accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The accompanying drawings, which constitute part of the present invention, are intended to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are intended to explain the present invention and do not constitute an undue limitation of the present invention. In the accompanying drawings: Figure 1 A schematic structural diagram of a system for measuring a sample to be measured according to an embodiment of the present invention; Figure 2Schematic diagram of performing GI-SAXS measurement according to an embodiment of the present invention; Figure 3 Schematic diagram of performing T-SAXS measurement according to an embodiment of the present invention; Figure 4 Schematic diagram of the flow of the method for measuring a sample to be tested according to an embodiment of the present invention.

[0022] Description of reference numerals: 1. X-ray source; 2. Rotating workpiece stage; 3. Detector; 4. Sample to be measured; 5. Monochromator; 6. Front optical path; 7. Back optical path. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and do not constitute a limitation of the present invention.

[0024] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0025] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first", "second" and the like are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, features defined as "first", "second" and the like may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0026] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; and they can refer to internal connections between two components. Those skilled in the art can understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0027] The test samples described in the present invention can be memory chips, which can include NAND (Not AND) and DRAM (Dynamic Random Access Memory). The NAND memory structure is a high-aspect-ratio deep hole structure created through an etching process on a repeated stack of SiO2 and Si3N4, or a repeated stack of SiO2 and PolySi. This is a type of flash memory that increases storage density by vertically stacking memory cells. The 3D-DRAM memory structure (i.e., three-dimensional dynamic random access memory) is a high-aspect-ratio, long, deep hole structure created through an etching process on a stack of Si and SiGe. Multiple 3D-DRAM memory layers are stacked vertically to achieve higher storage density and faster access speeds. The critical lateral dimensions of deep or long deep hole structures, such as aperture, length, width, and tilt, determine the performance and yield of memory chips and require non-destructive metrology to accurately measure them. Therefore, transmission small-angle X-ray scattering (T-SAXS) and grazing-incidence small-angle X-ray scattering (GI-SAXS) have become viable metrology technologies. Currently, T-SAXS and GI-SAXS are two independent technologies, implemented using two separate instruments, requiring two sets of metrology equipment, significantly increasing measurement costs. Sequentially measuring the same 3D-NAND or 3D-DRAM chip using T-SAXS and GI-SAXS greatly reduces measurement efficiency. Switching between different instruments introduces errors such as positioning and measurement posture. Therefore, the present invention proposes a system and method for measuring samples to be tested.

[0028] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0029] like Figure 1 As shown, the measurement system of the sample to be tested described in the embodiment of the present invention includes an X-ray source 1, a rotating workpiece stage 2 and a detector 3. The X-ray source 1 emits X-rays to the sample to be tested 4 carried on the rotating workpiece stage 2, and the rotating workpiece stage 2 switches the sample to be tested 4 between a first preset angle and a second preset angle. The detector 3 receives the X-rays scattered by the sample to be tested 4 at the first preset angle, and obtains a corresponding first detection signal, and receives the X-rays scattered by the sample to be tested 4 at the second preset angle, and obtains a corresponding second detection signal. The first preset angle is the angle for GI-SAXS measurement, that is, the angle at which grazing-incidence small-angle X-ray scattering occurs between the X-rays and the sample to be tested 4; the second preset angle is the angle for T-SAXS measurement, that is, the angle at which transmission small-angle X-ray scattering occurs between the X-rays and the sample to be tested 4.

[0030] In some embodiments, the X-ray source 1 is a liquid metal X-ray source or a high brightness rotating anode target X-ray source. Figure 1The X direction in the horizontal direction corresponds to the X-ray, and the rotating workpiece table 2 is placed vertically (such as Figure 1 The rotating workpiece stage 2 drives the sample 4 to be tested to rotate until the X-rays are parallel to the surface of the sample 4 to be tested, and the straight line where the X-rays are located at this time is defined as the first baseline. Further rotation on the first baseline covers the angle required for GI-SAXS measurement, which is the first preset angle; the rotating workpiece stage 2 drives the sample 4 to be tested to rotate until the X-rays are perpendicular to the surface of the sample 4 to be tested, and the straight line where the X-rays are located at this time is defined as the second baseline. Further rotation on the second baseline covers the angle required for T-SAXS measurement, which is the second preset angle. The range of the first preset angle can be 0°~0.5°, and the basis of the first preset angle is that the X-rays are parallel to the sample 4 to be tested, that is, when the X-rays are parallel to the surface of the sample 4 to be tested, the first preset angle is 0°; the range of the second preset angle can be -40°~+40°, and the basis of the second preset angle is that the X-rays are perpendicular to the surface of the sample 4 to be tested, that is, when the X-rays penetrate the sample 4 to be tested vertically, the second preset angle at this time is 0°.

[0031] In some embodiments, the detector 3 is movable, that is, the electric translation stage drives the detector 3 to move along with the rotation of the sample 4 to be tested. Figure 1 As shown, the detector 3 can be moved from the solid frame to the dotted frame, or from the dotted frame to the solid frame, or to other positions. The present invention does not limit this, as long as the detector 3 can be moved. Specifically, as shown in FIG. Figure 2 As shown, when the rotating workpiece stage 2 drives the sample 4 to rotate to the first preset angle, the electric translation stage drives the detector 3 to move to the first measurement position and obtains the first detection signal, thereby completing the GI-SAXS measurement of the sample 4; Figure 3 As shown, when the rotating workpiece stage 2 rotates the sample 4 to a second predetermined angle, the motorized translation stage drives the detector 3 to a second measurement position and obtains a second detection signal, thereby completing the T-SAXS measurement of the sample 4. In some embodiments, two sets of detectors 3 may be provided, with one set of detectors 3 positioned at the first measurement position to obtain a first detection signal, and the other set of detectors 3 positioned at the second measurement position to obtain a second detection signal.

[0032] In some embodiments, the sample 4 to be tested is a 3D-NAND wafer or a 3D-DRAM wafer. X-rays are incident on the periodically structured sample 4 at first and second preset angles, generating scattered X-rays that are received by the detector 3 to generate corresponding first and second detection signals.

[0033] The measurement system also includes a data processor. The data processor processes the first detection signal to obtain the film thickness and material properties of the sample 4 to be measured. In some embodiments, this process specifically includes inputting the first detection signal into a first measurement model of the data processor to obtain the film thickness and material properties. The first measurement model is a GI-SAXS measurement model. The data processor processes the second detection signal, the film thickness, and the material properties to obtain the deephole size and deephole inclination of the deephole in the sample 4 to be measured. In some embodiments, this process specifically includes inputting the second detection signal, the film thickness, and the material properties into a second measurement model of the data processor to obtain the deephole size and deephole inclination. The second measurement model is a T-SAXS measurement model.

[0034] In some embodiments, a monochromator 5 and a front-end optical path 6 are arranged in sequence along the X-ray propagation direction between the X-ray source 1 and the rotating workpiece stage 2. The monochromator 5 monochromates and shapes the X-rays, and the monochromated X-rays reach the surface of the sample 4 to be tested after passing through the front-end optical path 6. The front-end optical path 6 includes a slit assembly, an X-ray switch, and a first vacuum system, which are arranged in sequence along the X-ray propagation direction. The slit assembly is a plurality of slits arranged in sequence along the X-ray propagation direction, and is used to collimate the X-rays and control the spot size. The X-ray switch controls the X-rays emitted from the slit assembly and irradiates the sample 4 to be tested. The first vacuum system transmits the X-rays emitted from the X-ray switch to the sample 4 to be tested, thereby reducing the scattering noise caused by the air on the X-rays.

[0035] In some embodiments, a rear optical path 7 is provided between the rotating workpiece stage 2 and the detector 3 . The rear optical path 7 includes a second vacuum system, which transmits the X-rays scattered by the sample 4 to the detector 3 .

[0036] In addition to sharing the X-ray source 1, the embodiment of the present invention can also share the monochromator 5, the front optical path 6 and the rear optical path 7. By adjusting the rotating workpiece stage 2, T-SAXS measurement, GI-SAXS measurement and combined measurement of T-SAXS and GI-SAXS can be achieved, effectively improving the measurement efficiency.

[0037] A method for measuring a sample to be tested, combining Figures 1 to 4 ,include: An X-ray source 1 is used to emit X-rays toward a sample 4 to be tested; The rotating workpiece stage 2 is adjusted so that a plurality of first preset angles are formed between the X-rays emitted by the X-ray source 1 and the sample 4 to be tested. The detector 3 then receives the X-rays scattered by the sample 4 to be tested at the plurality of first preset angles to obtain a plurality of corresponding first detection signals. The rotating workpiece stage is adjusted again so that multiple second preset angles are formed between the X-rays and the sample to be tested, and the detector is used to receive the X-rays scattered by the sample to be tested at the multiple second preset angles to obtain corresponding multiple groups of second detection signals.

[0038] In some embodiments, the measurement method further includes: obtaining the film thickness and material properties of the sample 4 to be measured based on multiple sets of first detection signals. This process specifically includes: inputting multiple sets of first detection signals into the first measurement model, using the residual value of the measurement data and the fitting data as a fitting evaluation index, guiding the calculation model to change so that the residual value becomes minimum, and the chip geometry structure in the corresponding measurement model is closest to the measured chip structure. The film thickness and material properties are calculated based on a neural network or LM fitting algorithm. Among them, the first measurement model is a GI-SAXS measurement model, and the model is as follows: ; ; ; in, represents the scattering intensity obtained by the first detection signal, represents the shape factor of the sample to be measured in the first measurement model, represents the periodic distribution of the sample to be measured in the first measurement model, ρ represents the material properties, q represents the scattering vector, Indicates the film thickness, represents the periodic variation of the scattering vector q, x represents the spatial position vector, and i represents the imaginary part.

[0039] In the GI-SAXS measurement model, based on the formula and , we can know the functional relationship between the scattering intensity and the spatial position vector, and then use the neural network or LM fitting algorithm to analyze the shape factor F(q), and we can find the material property ρ; based on the formula , and then use neural network or LM fitting algorithm to analyze , the film thickness can be calculated .

[0040] In some embodiments, the measurement method further includes: obtaining the deep hole size and deep hole inclination of the deep hole in the sample 4 to be tested based on multiple sets of second detection signals, film thickness, and material properties. This process specifically includes: inputting the film thickness, material properties, and multiple sets of second detection signals into a second measurement model, and fitting to obtain the deep hole size and deep hole inclination. The deep hole size includes the pore diameter, length, and width of the deep hole or long deep hole. The second measurement model is a T-SAXS measurement model, and the model is as follows: ; in, represents the scattering intensity obtained by the second detection signal, represents the shape factor of the sample to be measured in the second measurement model, represents the periodic distribution of the sample to be measured in the second measurement model, ρ represents the material properties, Indicates the film thickness, and n indicates the number of laminated layers of the sample to be tested.

[0041] It should be noted that the shape factor of the sample to be tested Including deep hole size and deep hole inclination, the shape factor of the sample to be tested Determined by the three-dimensional structure of the sample to be tested, it is described by the combined effect of the deep hole size and the deep hole inclination, that is, the shape factor It can be expressed as: ; in, Indicates the critical size, i.e. the deep hole size, In a specific embodiment, the process of obtaining the deep hole size and deep hole inclination includes: using a neural network or LM fitting algorithm to analyze the shape factor based on the T-SAXS measurement model. , get the deep hole size and deep hole inclination.

[0042] Since the material properties and laminate thickness of Sample 4 were already determined during the GI-SAXS measurement, these were then input into the T-SAXS measurement model as fixed values. Accurately calibrating the material properties and laminate thickness based on the GI-SAXS measurement and the measurement model effectively reduces the number of uncertain parameters in the T-SAXS measurement model fitting process and resolves the strong coupling relationships between parameters. Therefore, by inputting the material properties and laminate thickness obtained from the GI-SAXS measurement into the T-SAXS measurement model, the deephole size and deephole inclination of Sample 4 can be more accurately measured.

[0043] It should be understood that the various forms of the processes shown above can be used to reorder, add, or delete steps. For example, the steps described in the present disclosure can be performed in parallel, sequentially, or in a different order, as long as the desired results of the technical solutions disclosed in the present disclosure can be achieved. This is not limited herein.

[0044] The above specific embodiments do not limit the scope of protection of the present invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions may be made based on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention are intended to be included within the scope of protection of the present invention.

Claims

1. A measuring system for a sample to be tested, characterized in that: include: Rotating workpiece table to carry the sample to be tested; An X-ray source, emitting X-rays toward the sample to be tested; a detector for receiving X-rays scattered by the sample under test at the first preset angle to obtain a corresponding first detection signal, and for receiving X-rays scattered by the sample under test at the second preset angle to obtain a corresponding second detection signal; The first preset angle is an angle at which the X-rays and the sample to be tested generate grazing incidence small-angle X-ray scattering; the second preset angle is an angle at which the X-rays and the sample to be tested generate transmission small-angle X-ray scattering.

2. The measuring system for a sample to be tested according to claim 1, wherein: It also includes a data processor; the data processor processes the first detection signal to obtain the film thickness and material properties of the sample to be tested, and the data processor processes the second detection signal, the film thickness and the material properties to obtain the deep hole size and deep hole inclination of the deep hole in the sample to be tested.

3. The measuring system for a sample to be tested according to claim 2, wherein: The data processor processes the first detection signal to obtain the film thickness and material properties of the sample to be tested, including: inputting the first detection signal into a first measurement model of the data processor to obtain the film thickness and the material properties; The data processor processes the second detection signal, the film layer thickness and the material properties to obtain the deep hole size and the deep hole inclination, including: inputting the second detection signal, the film layer thickness and the material properties into the second measurement model of the data processor to obtain the deep hole size and the deep hole inclination.

4. The measuring system for a sample to be tested according to claim 3, wherein: The first measurement model is a GI-SAXS measurement model, and the second measurement model is a T-SAXS measurement model.

5. The system for measuring a sample to be tested according to any one of claims 1 to 4, wherein: When the sample to be tested is at the first preset angle, the detector moves to a first measuring position and obtains the first detection signal; when the sample to be tested is at the second preset angle, the detector moves to a second measuring position and obtains the second detection signal.

6. The measuring system for a sample to be tested according to claim 1, wherein: The X-ray source is a liquid metal X-ray source or a high-brightness rotating anode target X-ray source.

7. The measuring system for a sample to be tested according to claim 1, wherein: A monochromator is provided between the X-ray source and the rotating workpiece stage, and the monochromator performs monochromatization and beam shaping on the X-rays.

8. The measuring system for a sample to be tested according to claim 7, characterized in that: A front optical path is provided between the monochromator and the rotating workpiece stage; the front optical path includes: a slit component, for performing collimation and spot size control processing on the X-rays from the monochromator; An X-ray switch, controlling the X-rays from the slit component to irradiate the sample to be tested; a first vacuum system, transmitting the X-rays emitted from the X-ray switch to the sample to be tested; A rear optical path is provided between the rotating workpiece stage and the detector; the rear optical path includes a second vacuum system, and the second vacuum system transmits the X-rays scattered by the sample to be measured to the detector.

9. A method for measuring a sample to be tested, characterized in that: Methods include: An X-ray source is used to emit X-rays to the sample to be tested; Adjusting the rotating workpiece stage so that the X-rays emitted by the X-ray source form a plurality of first preset angles with the sample to be tested, and then using a detector to receive the X-rays scattered by the sample to be tested at the plurality of first preset angles to obtain corresponding plurality of first detection signals; The rotating workpiece stage is adjusted again so that a plurality of second preset angles are formed between the X-rays and the sample to be tested, and the detector is used to receive the X-rays scattered by the sample to be tested at the plurality of second preset angles to obtain a corresponding plurality of second detection signals.

10. The method for measuring a sample to be tested according to claim 9, wherein: The method also includes: Obtaining the film thickness and the material properties based on multiple sets of first detection signals; The deep hole size and deep hole inclination of the deep hole in the sample to be tested are obtained based on multiple groups of second detection signals, the film thickness and the material properties.

11. The method for measuring a sample to be tested according to claim 10, wherein: Obtaining the film thickness and the material properties based on multiple sets of first detection signals includes: inputting the multiple sets of first detection signals into a first measurement model to obtain the film thickness and the material properties.

12. The method for measuring a sample to be tested according to claim 11, wherein: The first measurement model is: ； ； ； in, represents the scattering intensity obtained by the first detection signal, represents the shape factor of the sample to be measured in the first measurement model, represents the periodic distribution of the sample to be measured in the first measurement model, ρ represents the material property, q represents the scattering vector, represents the thickness of the film layer, represents the periodic variation of the scattering vector q, x represents the spatial position vector, and i represents the imaginary part.

13. The method for measuring a sample to be tested according to claim 10, wherein: The deep hole size and the deep hole inclination are obtained based on multiple groups of second detection signals, the film layer thickness and the material properties, including: inputting the film layer thickness, the material properties and multiple groups of second detection signals into a second measurement model to obtain the deep hole size and the deep hole inclination.

14. The method for measuring a sample to be tested according to claim 13, wherein: The second measurement model is: ； in, represents the scattering intensity obtained by the second detection signal, represents the shape factor of the sample to be measured in the second measurement model, represents the periodic distribution of the sample to be tested in the second measurement model, ρ represents the material property, n represents the number of stacked layers of the sample to be tested, thk represents the film thickness, wherein the deep hole size and the deep hole inclination are derived from the shape factor Obtained by fitting.

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