Simulation optimization method of double-helix grounding mechanism and related equipment thereof

Abstract

The invention discloses a simulation optimization method of a double-helix grounding mechanism and related equipment thereof, and the method comprises the steps: obtaining part parameters and topological structure parameters of the double-helix grounding mechanism, constructing an environment simulation model of the double-helix grounding mechanism in combination with environment parameters, and carrying out the simulation optimization of the double-helix grounding mechanism; the environment simulation model comprises an air environment layer, a soil environment layer and a mechanism simulation model of a double-helix grounding mechanism, impacting the impact current to the mechanism simulation model, calculating the impact grounding resistance of the mechanism simulation model under the impact of the impact current, judging whether the impact grounding resistance is greater than a preset resistance threshold value, and if yes, executing the step of executing the step of executing the step of executing the step of executing the step of executing the step of executing the step of executing the step. And if not, target component parameters of the double-helix grounding mechanism are adjusted by taking reduction of the impact grounding resistance as an optimization target. Therefore, the impact current simulation is carried out on the double-helix grounding mechanism, and the parts of the double-helix grounding mechanism are optimized, so that the impact grounding resistance of the double-helix grounding mechanism under the impact current is reduced to be below the threshold value, and the lightning protection performance of the double-helix grounding mechanism is improved.

Description

Technical Field

[0001] The present application relates to the technical field of lightning protection and grounding technology, and more specifically, to a simulation optimization method for a double-helix grounding mechanism and related equipment. Background Art

[0002] In power systems, the performance of grounding structures plays a key role in lightning protection. Currently, the damage caused by lightning strikes to power systems remains severe. Although various measures have been taken to reduce grounding resistance and improve lightning protection performance, many challenges remain.

[0003] Existing resistance-reduction materials and technologies, such as resistance-reducing agents and grounding modules, are significantly affected by environmental factors. In arid or highly saline soil areas, resistance-reducing agents are prone to failure and are unable to continuously reduce grounding resistance, resulting in unstable lightning protection performance.

[0004] As power systems continue to develop, ultra-high voltage (UHV) transmission lines transmit high power, and lightning strikes can cause even more severe losses. Therefore, optimizing the grounding mechanism through simulation to reduce its grounding resistance and improve its lightning protection performance is a critical issue. Summary of the Invention

[0005] In view of the above problems, the present application provides a simulation optimization method of a double-helix grounding mechanism and related equipment to reduce the grounding resistance of the grounding mechanism and improve the lightning protection performance of the grounding mechanism.

[0006] In order to achieve the above objectives, the following specific plans are proposed:

[0007] A simulation optimization method for a double helix grounding mechanism, the double helix grounding mechanism comprising a grounding pile, a grounding lead, and a double helix wire wound around the grounding pile;

[0008] The double helix comprises an inner helix and an outer helix, the inner helix is relatively parallel to the outer helix, and the current directions of the inner helix and the outer helix are opposite;

[0009] The grounding lead is arranged on the top of the double helix;

[0010] The method includes:

[0011] Obtaining component parameters and topological structure parameters of the double-helix grounding mechanism, wherein the component parameters include size parameters of the grounding pile, material parameters of the inner helix, and material parameters of the outer helix;

[0012] Constructing an environmental simulation model of the double-helix grounding mechanism according to the component parameters and the topological structure parameters, as well as the environmental parameters of the double-helix grounding mechanism, wherein the environmental simulation model includes an air environment layer, a soil environment layer, and a mechanism simulation model of the double-helix grounding mechanism;

[0013] determining an impact current for impacting the mechanism simulation model based on a contact area between the air environment layer and the mechanism simulation model, and a contact area between the soil environment layer and the mechanism simulation model;

[0014] impacting the impulse current to the mechanism simulation model, and calculating the impact grounding resistance of the mechanism simulation model under the impact of the impulse current;

[0015] Determine whether the impulse grounding resistance is greater than a preset resistance threshold. If so, adjust the target component parameters of the double-helix grounding mechanism with the optimization goal of reducing the impulse grounding resistance. The target component parameters are one or more of the component parameters.

[0016] Optionally, the double helix grounding mechanism includes a grounding stake, a grounding lead and a double helix wire wound around the grounding stake;

[0017] The double helix comprises an inner helix and an outer helix, the inner helix is relatively parallel to the outer helix, and the current directions of the inner helix and the outer helix are opposite;

[0018] The grounding lead is arranged on the top of the double helix.

[0019] Optionally, the environmental simulation model is a cylindrical structure with upper and lower layers, the upper cylinder of the environmental simulation model is the air environment layer, and the lower cylinder of the environmental simulation model is the soil environment layer;

[0020] The grounding lead simulation model of the mechanism simulation model passes through the air environment layer from the soil environment layer.

[0021] Optionally, the step of applying the impulse current to the mechanism simulation model and calculating the impulse grounding resistance of the mechanism simulation model under the impulse current includes:

[0022] Impacting the impact current on the mechanism simulation model to obtain a scalar potential value of each preset observation line in the soil environment layer;

[0023] determining a maximum scalar potential value among the scalar potential values;

[0024] The maximum scalar potential value is divided by the amplitude of the impulse current to obtain the impulse grounding resistance of the mechanism simulation model under the impulse current.

[0025] Optionally, adjusting target component parameters of the double-helix grounding mechanism with the reduction of the impulse grounding resistance as the optimization goal includes:

[0026] According to the formula for increasing the equivalent radius of the grounding conductor, the grounding pile of the double-helix grounding mechanism is extended to reduce the impulse grounding resistance, wherein the formula for increasing the equivalent radius of the grounding conductor is:

[0027]

[0028] in, is the grounding equivalent radius of the double helix grounding mechanism, and the grounding resistance of the double helix grounding mechanism increases with the grounding equivalent radius. decreases with the increase of is the length of the grounding pile of the double helix grounding mechanism, is the soil resistivity of the grounding soil layer of the double helix grounding mechanism, is the critical ionization field strength of the mechanism simulation model under the impact of the impact current.

[0029] Optionally, adjusting target component parameters of the double-helix grounding mechanism with the reduction of the impulse grounding resistance as the optimization goal includes:

[0030] The cross-sectional area of the grounding pile is increased to reduce the impact grounding resistance.

[0031] Optionally, adjusting target component parameters of the double-helix grounding mechanism with the reduction of the impulse grounding resistance as the optimization goal includes:

[0032] Replacing the material of the double helix of the double helix grounding mechanism with a first target material to reduce the impact grounding resistance, wherein the resistivity of the first target material is lower than the resistivity of the current double helix;

[0033] and / or,

[0034] The material of the grounding pile of the double-helix grounding mechanism is replaced with a second target material to reduce the impact grounding resistance, and the resistivity of the second target material is lower than the resistivity of the current grounding pile.

[0035] A simulation optimization device for a double-helix grounding mechanism, the double-helix grounding mechanism comprising a grounding pile, a grounding lead, and a double-helix wire wound around the grounding pile;

[0036] The double helix comprises an inner helix and an outer helix, the inner helix is relatively parallel to the outer helix, and the current directions of the inner helix and the outer helix are opposite;

[0037] The grounding lead is arranged on the top of the double helix;

[0038] The simulation optimization device includes:

[0039] a parameter acquisition unit, configured to acquire component parameters and topological structure parameters of the double-helix grounding mechanism, wherein the component parameters include size parameters of the grounding pile, material parameters of the inner helix, and material parameters of the outer helix;

[0040] an environmental simulation model construction unit, configured to construct an environmental simulation model of the double-helix grounding mechanism based on the component parameters and the topological structure parameters, as well as the environmental parameters of the double-helix grounding mechanism, wherein the environmental simulation model includes an air environment layer, a soil environment layer, and a mechanism simulation model of the double-helix grounding mechanism;

[0041] an impact current determining unit, configured to determine an impact current for impacting the mechanism simulation model based on a contact area between the air environment layer and the mechanism simulation model, and a contact area between the soil environment layer and the mechanism simulation model;

[0042] an impulse grounding resistance calculation unit, configured to apply the impulse current to the mechanism simulation model and calculate the impulse grounding resistance of the mechanism simulation model under the impulse current;

[0043] A component parameter adjustment unit is used to determine whether the impact grounding resistance is greater than a preset resistance threshold. If so, the target component parameters of the double-helix grounding mechanism are adjusted with the reduction of the impact grounding resistance as the optimization goal. The target component parameters are one or more of the component parameters.

[0044] Optionally, the impulse grounding resistance calculation unit includes:

[0045] a scalar potential value acquisition unit, configured to impact the impact current to the mechanism simulation model and acquire a scalar potential value of each preset observation line in the soil environment layer;

[0046] a maximum scalar potential value determining unit, configured to determine a maximum scalar potential value among the scalar potential values;

[0047] The resistance calculation unit is used to divide the maximum scalar potential value by the amplitude of the impulse current to obtain the impulse grounding resistance of the mechanism simulation model under the impact of the impulse current.

[0048] Optionally, the component parameter adjustment unit includes:

[0049] The grounding pile extension unit is used to extend the grounding pile of the double helix grounding mechanism according to the formula for increasing the equivalent radius of the grounding conductor, so as to reduce the impulse grounding resistance, wherein the formula for increasing the equivalent radius of the grounding conductor is:

[0050]

[0051] in, is the grounding equivalent radius of the double helix grounding mechanism, and the grounding resistance of the double helix grounding mechanism increases with the grounding equivalent radius. decreases with the increase of is the length of the grounding pile of the double helix grounding mechanism, is the soil resistivity of the grounding soil layer of the double helix grounding mechanism, is the critical ionization field strength of the mechanism simulation model under the impact of the impact current.

[0052] Optionally, the component parameter adjustment unit includes:

[0053] The grounding pile cross-sectional area increasing unit is used to increase the cross-sectional area of the grounding pile to reduce the impulse grounding resistance.

[0054] Optionally, the component parameter adjustment unit includes:

[0055] a first material replacement unit, configured to replace the material of the double helix of the double helix grounding mechanism with a first target material to reduce the impulse grounding resistance, wherein the resistivity of the first target material is lower than the resistivity of the current double helix;

[0056] The second material replacement unit is used to replace the material of the grounding pile of the double-helix grounding mechanism with a second target material to reduce the impact grounding resistance, and the resistivity of the second target material is lower than the resistivity of the current grounding pile.

[0057] A double helix grounding device, applied to the simulation optimization method of the double helix grounding mechanism as described above;

[0058] The components of the double helix grounding device conform to the adjusted component parameters of the double helix grounding mechanism described above.

[0059] The structural topology of the double-helix grounding device conforms to the topological structural parameters of the double-helix grounding mechanism described above.

[0060] A simulation optimization device for a double-helix grounding mechanism, comprising a memory and a processor;

[0061] The memory is used to store programs;

[0062] The processor is used to execute the program to implement the various steps of the simulation optimization method of the double-helix grounding mechanism as described above.

[0063] By means of the above technical solution, the present application obtains the component parameters and topological structure parameters of the double helix grounding mechanism, and constructs an environmental simulation model of the double helix grounding mechanism according to the component parameters and topological structure parameters, as well as the environmental parameters of the double helix grounding mechanism. The environmental simulation model includes an air environment layer, a soil environment layer and a mechanism simulation model of the double helix grounding mechanism. Furthermore, based on the contact area between the air environment layer and the mechanism simulation model, and the contact area between the soil environment layer and the mechanism simulation model, the impulse current used to impact the mechanism simulation model is determined, the impulse current is impacted to the mechanism simulation model, the impulse grounding resistance of the mechanism simulation model under the impulse current impact is calculated, and it is determined whether the impulse grounding resistance is greater than the preset resistance threshold. If so, the target component parameters of the double helix grounding mechanism are adjusted with the reduction of the impulse grounding resistance as the optimization goal. It can be seen that by performing impulse current simulation on the double helix grounding mechanism and optimizing the components of the double helix grounding mechanism, it is ensured that the impulse grounding resistance of the double helix grounding mechanism under the impulse current is reduced to below the threshold, thereby improving the lightning protection performance of the double helix grounding mechanism. BRIEF DESCRIPTION OF THE DRAWINGS

[0064] Various other advantages and benefits will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiment below. The accompanying drawings are for illustration purposes only and are not to be considered as limiting the present application. The same reference symbols are used throughout the drawings to represent the same components. In the drawings:

[0065] Figure 1 A schematic diagram of a process for implementing simulation optimization of a double-helix grounding mechanism provided in an embodiment of the present application;

[0066] Figure 2 A schematic diagram of an environmental simulation model of a double-helix grounding mechanism provided in an embodiment of the present application;

[0067] Figure 3 A schematic diagram of the structure of a double-helix grounding mechanism provided in an embodiment of the present application;

[0068] Figure 4 A schematic diagram of the amplitude of an impulse current provided in an embodiment of the present application;

[0069] Figure 5 A schematic diagram of the change of an impact grounding resistance over time provided in an embodiment of the present application;

[0070] Figure 6 A schematic diagram of the structure of a device for realizing simulation optimization of a double-helix grounding mechanism provided in an embodiment of the present application;

[0071] Figure 7 A schematic structural diagram of a device for implementing simulation optimization of a double-helix grounding mechanism provided in an embodiment of the present application.

[0072] In the attached figure, 100 is a grounding pile, 200 is a double helix, 201 is an inner helix, 202 is an outer helix, 203 is a grounding lead, 300 is an air environment layer, and 400 is a soil environment layer. DETAILED DESCRIPTION

[0073] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0074] The present application solution can be implemented based on a terminal with data processing capabilities, which can be a computer, cloud, server, etc.

[0075] Next, combine Figure 1 The simulation optimization method of the double-helix grounding mechanism of the present application may include the following steps:

[0076] Step S110 : Obtain component parameters and topological structure parameters of the double-helix grounding mechanism.

[0077] Among them, the structure of the double helix grounding mechanism can be referred to Figure 2 and Figure 3 , including a grounding pile 100, a grounding lead 203 and a double helix 200 wound around the grounding pile 100.

[0078] Specifically, the grounding pile 100 may be a long cylinder made of concrete.

[0079] The double helix 200 can be made of graphite, and can include an inner helix 201 and an outer helix 202. The winding radius of the inner helix 201 is slightly smaller than the winding radius of the outer helix 202. The winding methods of the inner helix 201 and the outer helix 202 are relatively parallel, and the current directions of the inner helix 201 and the outer helix 202 are opposite.

[0080] According to the double helix inductance formula It can be seen that when the double helix 200 is completely symmetrical and tightly coupled, the total inductance Significantly reduced. and are the self-inductance of the inner helix 201 and the self-inductance of the outer helix 202, is the mutual inductance between the inner helix 201 and the outer helix 202 .

[0081] like Figure 3 As shown, the ground lead 203 can be a U-shaped structure, and is arranged on the top of the double helix 200.

[0082] The U-shaped structure evenly distributes current to the inner and outer paths of the double-helix graphite wire, forming independent bidirectional conductive paths. This design is equivalent to a parallel resistor network, effectively reducing the overall grounding resistance and improving current discharge efficiency. The magnetic field generated by the reverse currents in the double-helix structure partially cancels out the magnetic field, and the U-shaped lead further helps balance the current direction, reducing electromagnetic interference with surrounding metal components and thus improving the system's electromagnetic compatibility.

[0083] The component parameters of the double-helix grounding mechanism can include the size and material parameters of each component, specifically the size of the grounding stake, the material parameters of the inner and outer helical wires. The topological parameters of the double-helix grounding mechanism can include the relative positional relationships between the components, the connection relationships between the components, the number of helical wire turns, and the helical wire winding method.

[0084] Step S120 : constructing an environmental simulation model of the double helix grounding mechanism according to the component parameters and topology parameters, as well as the environmental parameters of the double helix grounding mechanism.

[0085] Among them, the environmental simulation model of the double helix grounding mechanism is as follows Figure 2 As shown, the mechanism simulation model includes an air environment layer 300, a soil environment layer 400 and a double helix grounding mechanism. Figure 2 and Figure 3 The U-shaped grounding lead 203 can pass through the air environment layer 300 from the soil environment layer 400.

[0086] Specifically, the environment simulation model may be a cylindrical structure and may be divided into upper and lower layers according to the boundary between air and soil. The upper cylinder of the environment simulation model may be the air environment layer 300 , and the lower cylinder of the environment simulation model may be the soil environment layer 400 .

[0087] Step S130 : determining an impact current for impacting the mechanism simulation model based on a contact area between the air environment layer and the mechanism simulation model, and a contact area between the soil environment layer and the mechanism simulation model.

[0088] The contact area between the air environment layer and the mechanism simulation model represents the interface between the grounding conductor (U-shaped structure) and the air medium. Its size directly affects the air breakdown characteristics and electromagnetic field distribution during lightning current injection. Geometric modeling allows for accurate calculation of this area, ensuring that the simulation model reflects the air ionization effects under actual operating conditions. The contact area between the soil environment layer and the mechanism simulation model, including the contact surface between the grounding pile and the double-helix graphite wire and the surrounding soil, directly affects the current dissipation capacity and grounding resistance. Since soil resistivity is typically much lower than air, the size of this area determines the primary discharge path for the surge current.

[0089] In addition, the inrush current can be determined by customizing the inrush current peak value, peak time, and half-peak time.

[0090] Step S140 : applying an impulse current to the mechanism simulation model, and calculating the impulse grounding resistance of the mechanism simulation model under the impulse current.

[0091] Specifically, examples such as Figure 4 A lightning impulse current of 8 / 20μs and an amplitude of 1kA impacts the mechanism simulation model. The mechanism simulation model calculates the current conduction capacity based on its own component parameters and topological structure parameters, and calculates the impulse grounding resistance under the impact of the impulse current in combination with the maximum ground potential rise near the mechanism simulation model.

[0092] Step S150 , determining whether the impulse grounding resistance is greater than a preset resistance threshold; if so, executing step S160 .

[0093] Specifically, the preset resistance threshold can be customized, such as 15Ω or 10Ω. If the impulse grounding resistance is greater than the preset resistance threshold, it indicates that the conduction capacity of the double helix grounding mechanism does not meet the resistance reduction standard / requirement.

[0094] Step S160 : adjusting target component parameters of the double-helix grounding mechanism with the optimization goal of reducing impulse grounding resistance.

[0095] The target component parameter may be one or more component parameters.

[0096] It is understandable that, since the conduction capacity of the double helix grounding mechanism does not meet the resistance reduction standard / requirement, it is necessary to adjust the component parameters of the double helix grounding mechanism with the reduction of impulse grounding resistance as the optimization goal.

[0097] Furthermore, after adjusting the component parameters of the double helix grounding mechanism, the double helix grounding mechanism's current conduction capacity is enhanced, so that when the next impulse current is impacted on the mechanism simulation model, the impact grounding resistance of the mechanism simulation model is lower. After performing several component parameter optimization adjustments, when the impact grounding resistance is no greater than the preset resistance threshold, it indicates that the double helix grounding mechanism's current conduction capacity meets the resistance reduction standard / requirements, and the simulation optimization of the double helix grounding mechanism is completed. Figure 5 The impact grounding resistance curve of the double-helix grounding mechanism after the simulation optimization is completed is shown. The impact grounding resistance is 1.91Ω, which is lower than the preset resistance threshold (15Ω or 10Ω) and meets the resistance reduction standards / requirements.

[0098] The simulation optimization method for a double helix grounding mechanism provided in this embodiment obtains component parameters and topological structure parameters of the double helix grounding mechanism, and constructs an environmental simulation model of the double helix grounding mechanism based on the component parameters and topological structure parameters, as well as the environmental parameters of the double helix grounding mechanism. The environmental simulation model includes an air environment layer, a soil environment layer, and a mechanism simulation model of the double helix grounding mechanism. Furthermore, based on the contact area between the air environment layer and the mechanism simulation model, and the contact area between the soil environment layer and the mechanism simulation model, an impulse current for impacting the mechanism simulation model is determined, the impulse current is impacted into the mechanism simulation model, the impulse grounding resistance of the mechanism simulation model under the impulse current is calculated, and it is determined whether the impulse grounding resistance is greater than a preset resistance threshold. If so, the target component parameters of the double helix grounding mechanism are adjusted with the reduction of the impulse grounding resistance as the optimization goal. Thus, by performing impulse current simulation on the double helix grounding mechanism, the components of the double helix grounding mechanism are optimized, thereby ensuring that the impulse grounding resistance of the double helix grounding mechanism under the impulse current is reduced to below the threshold, thereby improving the lightning protection performance of the double helix grounding mechanism.

[0099] In some embodiments of the present application, the process of applying the impulse current to the mechanism simulation model and calculating the impulse grounding resistance of the mechanism simulation model under the impulse current in step S140 is introduced. This process may include:

[0100] S1. Impact current is applied to the mechanism simulation model to obtain the scalar potential value of each preset observation line in the soil environment layer.

[0101] Specifically, a plurality of observation lines may be pre-marked in the soil environment layer, and a scalar potential value may be obtained for each observation line when the mechanism simulation model is impacted by the impact current.

[0102] S2. Determine the maximum scalar potential value among the scalar potential values.

[0103] It can be understood that the maximum scalar potential value may represent a maximum ground potential rise value.

[0104] S3. Divide the maximum scalar potential value by the amplitude of the impulse current to obtain the impulse grounding resistance of the mechanism simulation model under the impulse current impact.

[0105] Specifically, the impulse grounding resistance calculation formula can be used to calculate the impulse grounding resistance of the mechanism simulation model under the impulse current impact. The impulse grounding resistance calculation formula is:

[0106]

[0107] in, is the impulse grounding resistance, is the maximum scalar potential value, is the amplitude of the impulse current.

[0108] In some embodiments of the present application, the process of adjusting target component parameters of the double-helix grounding mechanism with the optimization goal of reducing the impulse grounding resistance in step S160 is introduced. The process may include the following aspects.

[0109] First, according to the formula for increasing the equivalent radius of the grounding conductor, the grounding piles of the double-helix grounding mechanism can be extended to reduce the impact grounding resistance.

[0110] The formula for increasing the equivalent radius of the grounding conductor can be:

[0111]

[0112] in, is the grounding equivalent radius of the double helix grounding mechanism. The grounding resistance of the double helix grounding mechanism changes with the grounding equivalent radius. decreases with the increase of is the length of the grounding pile of the double helix grounding mechanism, is the soil resistivity of the grounding soil layer of the double helix grounding mechanism, is the critical ionization field strength of the mechanism simulation model under impulse current impact. According to the formula, the use of a double helix grounding structure can increase the diffusion length of each conductor segment, significantly increase the equivalent radius of the device, and reduce the grounding resistance.

[0113] Secondly, the cross-sectional area of the grounding pile can be increased to reduce the impact grounding resistance.

[0114] It is understandable that the grounding resistance of the double helix grounding mechanism varies with the grounding equivalent radius. Therefore, when the cross-sectional area of the grounding pile increases, its grounding equivalent radius also increases accordingly, thereby reducing the impact grounding resistance.

[0115] Thirdly, the material of the double helix wire of the double helix grounding mechanism can be replaced with the first target material to reduce the impact grounding resistance.

[0116] The resistivity of the first target material is lower than the resistivity of the current double helix.

[0117] It can be understood that by reducing the resistivity of the components of the double helix grounding mechanism, the impulse grounding resistance can be reduced.

[0118] Fourthly, the material of the grounding pile of the double-helix grounding mechanism can be replaced with the second target material to reduce the impact grounding resistance.

[0119] The resistivity of the second target material is lower than the resistivity of the current grounding pile.

[0120] It can be understood that by reducing the resistivity of the components of the double helix grounding mechanism, the impulse grounding resistance can be reduced.

[0121] In addition to the aforementioned aspects, the conductivity of the mechanism simulation model can be improved by optimizing soil resistivity within the environmental simulation model, thereby reducing grounding resistance. Specifically, this can be achieved by replacing the surrounding high-resistance soil with a resistance-reducing agent, charcoal, salts (NaCl), or low-resistivity clay. Alternatively, a long-lasting corrosion-resistant resistance-reducing agent can be injected to enhance the flow dispersion of the mechanism simulation model. Furthermore, after optimizing soil parameters, the soil should also be optimized and modified accordingly under the actual operating conditions of the double-helix grounding mechanism to ensure a reduction in the impulse grounding resistance of the double-helix grounding mechanism.

[0122] The following describes an apparatus for implementing simulation optimization of a double-helix grounding mechanism provided in an embodiment of the present application. The apparatus for implementing simulation optimization of a double-helix grounding mechanism described below and the simulation optimization method for implementing a double-helix grounding mechanism described above can refer to each other.

[0123] See also Figure 6 , Figure 6 This is a schematic diagram of the structure of a device for realizing simulation optimization of a double-helix grounding mechanism disclosed in an embodiment of the present application.

[0124] like Figure 6 As shown, the device may include:

[0125] A parameter acquisition unit 11 is used to acquire component parameters and topological structure parameters of the double helix grounding mechanism;

[0126] An environmental simulation model construction unit 12 is configured to construct an environmental simulation model of the double-helix grounding mechanism based on the component parameters, the topology parameters, and the environmental parameters of the double-helix grounding mechanism, wherein the environmental simulation model includes an air environment layer, a soil environment layer, and a mechanism simulation model of the double-helix grounding mechanism;

[0127] an impact current determining unit 13, configured to determine an impact current for impacting the mechanism simulation model based on a contact area between the air environment layer and the mechanism simulation model, and a contact area between the soil environment layer and the mechanism simulation model;

[0128] An impulse grounding resistance calculation unit 14 is configured to apply the impulse current to the mechanism simulation model and calculate the impulse grounding resistance of the mechanism simulation model under the impulse current.

[0129] The component parameter adjustment unit 15 is used to determine whether the impulse grounding resistance is greater than a preset resistance threshold. If so, the target component parameters of the double-helix grounding mechanism are adjusted with the reduction of the impulse grounding resistance as the optimization goal.

[0130] Optionally, the impulse grounding resistance calculation unit includes:

[0131] a scalar potential value acquisition unit, configured to impact the impact current to the mechanism simulation model and acquire a scalar potential value of each preset observation line in the soil environment layer;

[0132] a maximum scalar potential value determining unit, configured to determine a maximum scalar potential value among the scalar potential values;

[0133] The resistance calculation unit is used to divide the maximum scalar potential value by the amplitude of the impulse current to obtain the impulse grounding resistance of the mechanism simulation model under the impulse current.

[0134] Optionally, the component parameter adjustment unit includes:

[0135] The grounding pile extension unit is used to extend the grounding pile of the double helix grounding mechanism according to the formula for increasing the equivalent radius of the grounding conductor, so as to reduce the impulse grounding resistance, wherein the formula for increasing the equivalent radius of the grounding conductor is:

[0136]

[0137] in, is the grounding equivalent radius of the double helix grounding mechanism, and the grounding resistance of the double helix grounding mechanism increases with the grounding equivalent radius. decreases with the increase of is the length of the grounding pile of the double helix grounding mechanism, is the soil resistivity of the grounding soil layer of the double helix grounding mechanism, is the critical ionization field strength of the mechanism simulation model under the impact of the impact current.

[0138] Optionally, the component parameter adjustment unit includes:

[0139] The grounding pile cross-sectional area increasing unit is used to increase the cross-sectional area of the grounding pile to reduce the impulse grounding resistance.

[0140] Optionally, the component parameter adjustment unit includes:

[0141] a first material replacement unit, configured to replace the material of the double helix of the double helix grounding mechanism with a first target material to reduce the impulse grounding resistance, wherein the resistivity of the first target material is lower than the resistivity of the current double helix;

[0142] The second material replacement unit is used to replace the material of the grounding pile of the double-helix grounding mechanism with a second target material to reduce the impact grounding resistance, and the resistivity of the second target material is lower than the resistivity of the current grounding pile.

[0143] The double-helix grounding device provided in an embodiment of the present application is described below. The double-helix grounding device described below can be applied to the simulation optimization method of the double-helix grounding mechanism mentioned in the above embodiment.

[0144] Specifically, the components of the double helix grounding device can conform to the component parameters of the double helix grounding mechanism mentioned in the above embodiment after simulation optimization adjustment. The structural topology of the double helix grounding device can conform to the topological structural parameters of the double helix grounding mechanism mentioned in the above embodiment.

[0145] The device for simulating and optimizing the double helix grounding mechanism provided in the embodiment of the present application can be applied to devices for simulating and optimizing the double helix grounding mechanism, such as terminals: mobile phones, computers, etc. Optionally, Figure 7 The hardware structure diagram of the device for simulation optimization of the double helix grounding mechanism is shown in FIG. Figure 7 , the hardware structure of the device for simulation optimization of the double helix grounding mechanism may include: at least one processor 1, at least one communication interface 2, at least one memory 3 and at least one communication bus 4;

[0146] In the embodiment of the present application, the number of the processor 1, the communication interface 2, the memory 3, and the communication bus 4 is at least one, and the processor 1, the communication interface 2, and the memory 3 communicate with each other through the communication bus 4;

[0147] The processor 1 may be a central processing unit (CPU), or an application-specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of the present invention;

[0148] The memory 3 may include a high-speed RAM memory, and may also include a non-volatile memory (non-volatile memory), such as at least one disk memory;

[0149] The memory stores a program, and the processor can call the program stored in the memory, wherein the program is used to:

[0150] Obtaining component parameters and topological structure parameters of the double-helix grounding mechanism, wherein the component parameters include size parameters of the grounding pile, material parameters of the inner helix, and material parameters of the outer helix;

[0151] Constructing an environmental simulation model of the double-helix grounding mechanism according to the component parameters and the topological structure parameters, as well as the environmental parameters of the double-helix grounding mechanism, wherein the environmental simulation model includes an air environment layer, a soil environment layer, and a mechanism simulation model of the double-helix grounding mechanism;

[0152] determining an impact current for impacting the mechanism simulation model based on a contact area between the air environment layer and the mechanism simulation model, and a contact area between the soil environment layer and the mechanism simulation model;

[0153] impacting the impulse current to the mechanism simulation model, and calculating the impact grounding resistance of the mechanism simulation model under the impact of the impulse current;

[0154] Determine whether the impulse grounding resistance is greater than a preset resistance threshold. If so, adjust the target component parameters of the double-helix grounding mechanism with the optimization goal of reducing the impulse grounding resistance. The target component parameters are one or more of the component parameters.

[0155] Optionally, the detailed functions and extended functions of the program may refer to the above description.

[0156] An embodiment of the present application further provides a storage medium, which may store a program suitable for execution by a processor, wherein the program is used to:

[0157] Obtaining component parameters and topological structure parameters of the double-helix grounding mechanism, wherein the component parameters include size parameters of the grounding pile, material parameters of the inner helix, and material parameters of the outer helix;

[0158] Constructing an environmental simulation model of the double-helix grounding mechanism according to the component parameters and the topological structure parameters, as well as the environmental parameters of the double-helix grounding mechanism, wherein the environmental simulation model includes an air environment layer, a soil environment layer, and a mechanism simulation model of the double-helix grounding mechanism;

[0159] determining an impact current for impacting the mechanism simulation model based on a contact area between the air environment layer and the mechanism simulation model, and a contact area between the soil environment layer and the mechanism simulation model;

[0160] impacting the impulse current to the mechanism simulation model, and calculating the impact grounding resistance of the mechanism simulation model under the impact of the impulse current;

[0161] Determine whether the impulse grounding resistance is greater than a preset resistance threshold. If so, adjust component parameters of the double-helix grounding mechanism with the optimization goal of reducing the impulse grounding resistance, where the target component parameters are one or more of the component parameters.

[0162] Optionally, the detailed functions and extended functions of the program may refer to the above description.

[0163] Finally, it should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article, or device comprising the element.

[0164] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The various embodiments can be combined as needed, and the same or similar parts can be referenced to each other.

[0165] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present application. Various modifications to these embodiments will be readily apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application is not limited to the embodiments shown herein, but is intended to conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A simulation optimization method for a double helix grounding mechanism, characterized in that: The double helix grounding mechanism includes a grounding pile, a grounding lead and a double helix wire wound around the grounding pile; The double helix comprises an inner helix and an outer helix, the inner helix is relatively parallel to the outer helix, and the current directions of the inner helix and the outer helix are opposite; The grounding lead is arranged on the top of the double helix; The method includes: Obtaining component parameters and topological structure parameters of the double-helix grounding mechanism, wherein the component parameters include size parameters of the grounding pile, material parameters of the inner helix, and material parameters of the outer helix; Constructing an environmental simulation model of the double-helix grounding mechanism according to the component parameters and the topological structure parameters, as well as the environmental parameters of the double-helix grounding mechanism, wherein the environmental simulation model includes an air environment layer, a soil environment layer, and a mechanism simulation model of the double-helix grounding mechanism; determining an impact current for impacting the mechanism simulation model based on a contact area between the air environment layer and the mechanism simulation model, and a contact area between the soil environment layer and the mechanism simulation model; impacting the impulse current to the mechanism simulation model, and calculating the impact grounding resistance of the mechanism simulation model under the impact of the impulse current; Determine whether the impulse grounding resistance is greater than a preset resistance threshold. If so, adjust the target component parameters of the double-helix grounding mechanism with the optimization goal of reducing the impulse grounding resistance. The target component parameters are one or more of the component parameters.

2. The method according to claim 1, characterized in that The environmental simulation model is a cylindrical structure with upper and lower layers, wherein the upper cylinder of the environmental simulation model is the air environment layer, and the lower cylinder of the environmental simulation model is the soil environment layer; The grounding lead simulation model of the mechanism simulation model passes through the air environment layer from the soil environment layer.

3. The method according to claim 1, characterized in that The method of causing the impulse current to impact the mechanism simulation model and calculating the impulse grounding resistance of the mechanism simulation model under the impact of the impulse current includes: Impacting the impact current on the mechanism simulation model to obtain a scalar potential value of each preset observation line in the soil environment layer; determining a maximum scalar potential value among the scalar potential values; The maximum scalar potential value is divided by the amplitude of the impulse current to obtain the impulse grounding resistance of the mechanism simulation model under the impulse current.

4. The method according to claim 1, wherein The step of adjusting target component parameters of the double-helix grounding mechanism with the optimization goal of reducing the impulse grounding resistance includes: According to the formula for increasing the equivalent radius of the grounding conductor, the grounding pile of the double-helix grounding mechanism is extended to reduce the impulse grounding resistance, wherein the formula for increasing the equivalent radius of the grounding conductor is: in, is the grounding equivalent radius of the double helix grounding mechanism, and the grounding resistance of the double helix grounding mechanism increases with the grounding equivalent radius. decreases with the increase of is the length of the grounding pile of the double helix grounding mechanism, is the soil resistivity of the grounding soil layer of the double helix grounding mechanism, is the critical ionization field strength of the mechanism simulation model under the impact of the impact current.

5. The method according to claim 4, characterized in that The step of adjusting target component parameters of the double-helix grounding mechanism with the optimization goal of reducing the impulse grounding resistance includes: The cross-sectional area of the grounding pile is increased to reduce the impact grounding resistance.

6. The method according to any one of claims 1 to 5, characterized in that The step of adjusting target component parameters of the double-helix grounding mechanism with the optimization goal of reducing the impulse grounding resistance includes: Replacing the material of the double helix of the double helix grounding mechanism with a first target material to reduce the impact grounding resistance, wherein the resistivity of the first target material is lower than the resistivity of the current double helix; and / or, The material of the grounding pile of the double-helix grounding mechanism is replaced with a second target material to reduce the impact grounding resistance, and the resistivity of the second target material is lower than the resistivity of the current grounding pile.

7. A simulation optimization device for a double-helix grounding mechanism, characterized in that: The double helix grounding mechanism includes a grounding pile, a grounding lead and a double helix wire wound around the grounding pile; The double helix comprises an inner helix and an outer helix, the inner helix is relatively parallel to the outer helix, and the current directions of the inner helix and the outer helix are opposite; The grounding lead is arranged on the top of the double helix; The simulation optimization device includes: a parameter acquisition unit, configured to acquire component parameters and topological structure parameters of the double-helix grounding mechanism, wherein the component parameters include size parameters of the grounding pile, material parameters of the inner helix, and material parameters of the outer helix; an environmental simulation model construction unit, configured to construct an environmental simulation model of the double-helix grounding mechanism based on the component parameters and the topological structure parameters, as well as the environmental parameters of the double-helix grounding mechanism, wherein the environmental simulation model includes an air environment layer, a soil environment layer, and a mechanism simulation model of the double-helix grounding mechanism; an impact current determining unit, configured to determine an impact current for impacting the mechanism simulation model based on a contact area between the air environment layer and the mechanism simulation model, and a contact area between the soil environment layer and the mechanism simulation model; an impulse grounding resistance calculation unit, configured to apply the impulse current to the mechanism simulation model and calculate the impulse grounding resistance of the mechanism simulation model under the impulse current; A component parameter adjustment unit is used to determine whether the impact grounding resistance is greater than a preset resistance threshold. If so, the target component parameters of the double-helix grounding mechanism are adjusted with the reduction of the impact grounding resistance as the optimization goal. The target component parameters are one or more of the component parameters.

8. The simulation optimization device according to claim 7, characterized in that: The impulse grounding resistance calculation unit includes: a scalar potential value acquisition unit, configured to impact the impact current to the mechanism simulation model and acquire a scalar potential value of each preset observation line in the soil environment layer; a maximum scalar potential value determining unit, configured to determine a maximum scalar potential value among the scalar potential values; The resistance calculation unit is used to divide the maximum scalar potential value by the amplitude of the impulse current to obtain the impulse grounding resistance of the mechanism simulation model under the impulse current.

9. A double helix grounding device, characterized in that: A simulation optimization method applied to the double-helix grounding mechanism as claimed in claim 1; The components of the double helix grounding device conform to the adjusted component parameters of the double helix grounding mechanism according to claim 1; The structural topology of the double-helix grounding device conforms to the topological structural parameters of the double-helix grounding mechanism as claimed in claim 1 .

10. A simulation optimization device for a double helix grounding mechanism, characterized in that: including memory and processor; The memory is used to store programs; The processor is used to execute the program to implement each step of the simulation optimization method of the double-helix grounding mechanism according to any one of claims 1 to 7.

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