Millimeter wave attenuator phase error correction method and device

Abstract

The invention provides a millimeter wave attenuator phase error correction method and device, and belongs to the technical field of terahertz circuit design. The method comprises the following steps: simulating or testing the millimeter wave attenuator with N stages of attenuation units to obtain an attenuation value of each stage of attenuation unit and a phase difference between a reference state and an attenuation state; determining whether the attenuation unit needs to be corrected based on the attenuation value and the phase difference; wherein if the deviation between the attenuation value and the theoretical attenuation value is greater than the maximum deviation of the attenuation value, performing amplitude correction on the attenuation unit; and if the phase difference is greater than the phase deviation limit, performing phase correction by connecting a phase correction unit in parallel with a tail capacitor of the attenuation unit. The millimeter wave attenuator is suitable for all millimeter wave attenuators with tail capacitors, and the phase fluctuation between different states of the millimeter wave attenuator and the overall RMS phase error are reduced on the premise that the chip area is not obviously increased.

Description

Technical Field

[0001] The present invention belongs to the technical field of terahertz circuit design, and in particular relates to a method and device for correcting phase errors of a millimeter wave attenuator. Background Art

[0002] Antenna arrays can be combined with appropriate phase-shift attenuation modules, low-noise amplifiers, power amplifiers, and transceiver switches to form a millimeter-wave phased array transceiver system. The spatial filtering implemented in millimeter-wave phased array transceiver systems can mitigate the adverse effects of multipath delay and co-channel interference between transceiver systems, further improving the communication range, data throughput, and link reliability of the transceiver system. Millimeter-wave attenuators are a critical component of phased array transceiver systems, primarily providing gain adjustment within a specific range and step size. Compared to variable-gain amplifiers acting as attenuators, millimeter-wave attenuators have the advantages of zero DC power consumption and a more precise gain control range and step size. Compared to analog-controlled attenuators, digitally controlled step-by-step millimeter-wave attenuators with tail capacitors offer advantages in control complexity, gain control range, and linearity. Therefore, they are widely used as key modules in millimeter-wave phased array systems. However, due to process fluctuations and inaccurate capacitance simulation results from electromagnetic simulation software, some attenuation states of the attenuator can be relatively large, affecting the RMS (root mean square) phase error of the attenuator module as a whole. This leads to poor phase consistency between the millimeter-wave attenuator and the phased array system using the millimeter-wave attenuator, weakening the beamforming capability of the millimeter-wave phased array system.

[0003] Currently, the millimeter-wave attenuators reported in mainstream reports have different structures, but their phase RMS (root mean square) errors are large, generally above 3°, and there is a lack of more universal phase correction technology. Summary of the Invention

[0004] The present invention aims to overcome the shortcomings of existing technologies by providing a method and apparatus for correcting millimeter-wave attenuator phase errors. This method, applicable to all millimeter-wave attenuators with tail capacitors, reduces the phase fluctuations between different states and the overall RMS (root mean square) phase error of the millimeter-wave attenuator without significantly increasing the chip area.

[0005] A first embodiment of the present invention provides a millimeter wave attenuator phase error correction method, which is applied to a switching millimeter wave attenuator with a tail capacitor, comprising:

[0006] Simulating or testing a millimeter-wave attenuator having N levels of attenuation units to obtain the attenuation value of each level of attenuation unit and the phase difference between a reference state and an attenuation state;

[0007] Based on the attenuation value and the phase difference, determine whether the attenuation unit needs to be corrected; wherein, if the deviation between the attenuation value and the theoretical attenuation value is greater than the preset maximum attenuation value deviation, the attenuation unit is amplitude corrected; if the phase difference is greater than the preset phase deviation limit, the attenuation unit is phase corrected; the phase correction includes: connecting m identical phase correction units in parallel to the tail capacitor of the attenuation unit, the phase correction unit provides a different phase by introducing a new attenuation state, thereby reducing the phase difference between the reference state and the attenuation state of the attenuation unit.

[0008] In a specific embodiment of the present invention, the phase correction unit includes: a calibration capacitor, a switching transistor, an inverter and a current limiting resistor; wherein the source of the switching transistor is grounded, and the drain is connected to one end of the calibration capacitor; the control end of the phase correction unit is respectively connected to one end of the inverter and one end of the current limiting resistor, and the other end of the current limiting resistor and the other end of the calibration capacitor are connected to form the access end of the phase correction unit.

[0009] In a specific embodiment of the present invention, it also includes:

[0010] The phase deviation between the reference state and the attenuation state of the nth attenuation unit in the attenuator is Δθ n , the phase deviation limit allowed by the nth attenuation unit is θ n , the attenuation value of the nth level attenuation unit is ATT n The theoretical attenuation value of the nth level attenuation unit is ATTideal n The maximum deviation of the attenuation value allowed by the n-th level attenuation unit is ATTmaxerror n , n=1,2,……,N;

[0011] If Δθ n ≤θ n and|ATT n -ATTideal n |≤ATTmaxerror n , then no correction is performed on the attenuation unit of this level;

[0012] If Δθ n ≤θ n and|ATT n -ATTideal n |>ATTmaxerror n , then the amplitude correction is performed on the attenuation unit of this level; wherein, during the amplitude correction, the value of the resistor or tail capacitor in the attenuation unit of this level is adjusted, and the attenuation value of the attenuation unit after adjustment is recorded as ATTnew n , the phase difference between the reference state and the decay state is Δθnewn , then re-simulate or test the attenuation unit of this level. If |ATT n -ATTideal n |≤ATTmaxerror n And Δθnew n ≤θ n , then the correction of the attenuation unit of this level is completed;

[0013] If Δθ n >θ n , and |ATT n -ATTideal n |≤ATTmaxerror n , then perform phase correction and amplitude correction on the attenuation unit of this level;

[0014] If Δθ n >θ n And satisfy |ATT n -ATTideal n |≤ATTmaxerror n , then perform phase correction on the attenuation unit of this level.

[0015] In a specific embodiment of the present invention, it also includes:

[0016] After connecting m identical phase correction units in parallel, there are 2 attenuation units in the nth stage. m+1 There are 2 different states m One state works in the reference state, and the other two m The first state works in the attenuation state; the second state works in the reference state. m The amplitude and phase of the two states are exactly the same, denoted as ATT n，0 and θ n，0 ;

[0017] Note that 2 is working in the attenuation state m The attenuation value of each state is ATTnew n,p , p=1,…,2 m , where the phase difference between each reference state and the decay state is denoted as Δθnew n，p , p=1,…,2 m ;

[0018] From 2 m The maximum value among the absolute values of the phase differences is recorded as Select the minimum value and record it as

[0019] In a specific embodiment of the present invention, it also includes:

[0020] 1) Perform simulation or testing on the nth stage attenuation unit with phase correction and then compare parameters, where:

[0021] Compare and Δθ n ;

[0022] Compare and θ n ;

[0023] ATTnew n，1 to ATTideal n Make comparisons;

[0024] Compare the modified area S of level n n ′ and S n :

[0025] like and

[0026] Then the attenuation unit of this level meets the phase condition;

[0027] If|ATTnew n，p -ATTideal n |≤ATTmaxerror n , p=1,…,2 m , then the attenuation unit of this level meets the amplitude condition;

[0028] like Then the attenuation unit of this level meets the area condition;

[0029] 2) Based on the result of step 1), determine whether the attenuation unit of this stage has been calibrated;

[0030] If the simulation or test results show that the n-th stage attenuation unit satisfies the phase condition, the amplitude condition, and the area condition at the same time, the calibration of the n-th stage attenuation unit is completed;

[0031] If the simulation or test results show that the n-th stage attenuation unit meets the phase condition and the amplitude condition but does not meet the area condition, the number of phase correction units is reduced, and the values and layout of the calibration capacitors and switching transistors in the phase correction units are adjusted until the phase condition, amplitude condition, and area condition are met at the same time, and the n-th stage attenuation unit is corrected;

[0032] If the simulation or test results show that the n-th stage attenuation unit meets the area condition and the amplitude condition but does not meet the phase condition, then increase the number of phase correction units and adjust the values and layout of the calibration capacitor and the switch transistor in the phase correction unit until the phase condition, amplitude condition and area condition are met at the same time, and the n-th stage attenuation unit is corrected;

[0033] If the simulation or test results show that the n-th stage attenuation unit meets the area condition and the phase condition but does not meet the amplitude condition, then adjust the values of the switching transistor, the current limiting resistor, and the calibration capacitor in the attenuation unit of this stage until the phase condition, the amplitude condition, and the area condition are met at the same time. The calibration of the n-th stage attenuation unit is completed.

[0034] If the simulation or test results show that the n-th stage attenuation unit meets the area condition but does not meet the amplitude condition and the phase condition, then adjust the values of the switching transistor, current limiting resistor and calibration capacitor in the attenuation unit of this stage, and adjust the values of the capacitor and transistor in the phase correction unit at the same time, until the phase condition, amplitude condition and area condition are met at the same time, and the calibration of the n-th stage attenuation unit is completed;

[0035] If the simulation or test results show that the n-th stage attenuation unit meets the amplitude condition but does not meet the area condition and the phase condition, the number of phase correction units is reduced, and the values of the calibration capacitor and the switching transistor in the phase correction unit are adjusted until the phase condition, amplitude condition and area condition are met at the same time, and the n-th stage attenuation unit is corrected;

[0036] If the simulation or test results show that the n-th stage attenuation unit meets the phase condition but does not meet the area condition and the amplitude condition, it is necessary to reduce the number of phase correction units, adjust the values of the calibration capacitor and the switching transistor in the phase correction unit, and adjust the values of the transistor, resistor, and capacitor in the attenuation unit of this stage until the phase condition, amplitude condition, and area condition are met at the same time, and the correction of the n-th stage attenuation unit is completed;

[0037] If the simulation or test results show that the phase condition, area condition and amplitude condition of the n-th stage attenuation unit are not met, the number of phase correction units is reduced, and the values of the capacitors and transistors in the phase correction units are adjusted, and the values of the transistors, resistors and capacitors in the attenuation units of this stage are adjusted until the phase condition, amplitude condition and area condition are met at the same time, and the correction of the n-th stage attenuation unit is completed.

[0038] A second embodiment of the present invention provides a millimeter wave attenuator phase error correction device, which is applied to a switching millimeter wave attenuator with a tail capacitor, comprising:

[0039] A simulation test module is used to simulate or test a millimeter wave attenuator having N levels of attenuation units to obtain the attenuation value of each level of attenuation unit and the phase difference between the reference state and the attenuation state;

[0040] A correction module is used to determine whether the attenuation unit needs to be corrected based on the attenuation value and the phase difference; wherein, if the deviation between the attenuation value and the theoretical attenuation value is greater than a preset maximum attenuation value deviation, the attenuation unit is amplitude corrected; if the phase difference is greater than a preset phase deviation limit, the attenuation unit is phase corrected; the phase correction includes: connecting m identical phase correction units in parallel to the tail capacitor of the attenuation unit, the phase correction units providing different phases by introducing new attenuation states, thereby reducing the phase difference between the reference state and the attenuation state of the attenuation unit.

[0041] In a specific embodiment of the present invention, the phase correction unit includes: a calibration capacitor, a switching transistor, an inverter and a current limiting resistor; wherein the source of the switching transistor is grounded, and the drain is connected to one end of the calibration capacitor; the control end of the phase correction unit is respectively connected to one end of the inverter and one end of the current limiting resistor, and the other end of the current limiting resistor and the other end of the calibration capacitor are connected to form the access end of the phase correction unit.

[0042] In a specific embodiment of the present invention, it also includes:

[0043] The phase deviation between the reference state and the attenuation state of the nth attenuation unit in the attenuator is Δθ n , the phase deviation limit allowed by the nth attenuation unit is θ n , the attenuation value of the nth level attenuation unit is ATT n The theoretical attenuation value of the nth level attenuation unit is ATTideal n The maximum deviation of the attenuation value allowed by the n-th level attenuation unit is ATTmaxerror n , n=1,2,……,N;

[0044] If Δθ n ≤θ n and|ATT n -ATTideal n |≤ATTmaxerror n , then no correction is performed on the attenuation unit of this level;

[0045] If Δθ n ≤θ n and|ATT n -ATTideal n |>ATTmaxerror n , then the amplitude correction is performed on the attenuation unit of this level; wherein, during the amplitude correction, the value of the resistor or tail capacitor in the attenuation unit of this level is adjusted, and the attenuation value of the attenuation unit after adjustment is recorded as ATTnew n, the phase difference between the reference state and the decay state is Δθnew n , then re-simulate or test the attenuation unit of this level. If |ATT n -ATTideal n |≤ATTmaxerror n And Δθnew n ≤θ n , then the correction of the attenuation unit of this level is completed;

[0046] If Δθ n >θ n , and |ATT n -ATTideal n |>ATTmaxerror n , then perform phase correction and amplitude correction on the attenuation unit of this level;

[0047] If Δθ n >θ n And satisfy |ATT n -ATTideal n |≤ATTmaxerror n , then perform phase correction on the attenuation unit of this level.

[0048] In a specific embodiment of the present invention, it also includes:

[0049] After connecting m identical phase correction units in parallel, there are 2 attenuation units in the nth stage. m+1 There are 2 different states m One state works in the reference state, and the other two m The first state works in the attenuation state; the second state works in the reference state. m The amplitude and phase of the two states are exactly the same, denoted as ATT n，0 and θ n，0 ;

[0050] Note that 2 is working in the attenuation state m The attenuation value of each state is ATTnew n,p , p=1,…,2 m , where the phase difference between each reference state and the decay state is denoted as Δθnew n，p , p=1,…,2 m ;

[0051] From 2 m The maximum value among the absolute values of the phase differences is recorded as Select the minimum value and record it as

[0052] In a specific embodiment of the present invention, it also includes:

[0053] 1) Perform simulation or testing on the nth stage attenuation unit with phase correction and then compare parameters, where:

[0054] Compare and Δθ n ;

[0055] Compare and θ n ;

[0056] ATTnew n，1 to ATTideal n Make comparisons;

[0057] Compare the modified area S of level n n ′ and S n :

[0058] like and

[0059] Then the attenuation unit of this level meets the phase condition;

[0060] If|ATTnew n，p -ATTideal n |≤ATTmaxerror n , p=1,…,2 m , then the attenuation unit of this level meets the amplitude condition;

[0061] like Then the attenuation unit of this level meets the area condition;

[0062] 2) Based on the result of step 1), determine whether the attenuation unit of this stage has been calibrated;

[0063] If the simulation or test results show that the n-th stage attenuation unit satisfies the phase condition, the amplitude condition, and the area condition at the same time, the calibration of the n-th stage attenuation unit is completed;

[0064] If the simulation or test results show that the n-th stage attenuation unit meets the phase condition and the amplitude condition but does not meet the area condition, the number of phase correction units is reduced, and the values and layout of the calibration capacitors and switching transistors in the phase correction units are adjusted until the phase condition, amplitude condition, and area condition are met at the same time, and the n-th stage attenuation unit is corrected;

[0065] If the simulation or test results show that the n-th stage attenuation unit meets the area condition and the amplitude condition but does not meet the phase condition, then increase the number of phase correction units and adjust the values and layout of the calibration capacitor and the switch transistor in the phase correction unit until the phase condition, amplitude condition and area condition are met at the same time, and the n-th stage attenuation unit is corrected;

[0066] If the simulation or test results show that the n-th stage attenuation unit meets the area condition and the phase condition but does not meet the amplitude condition, then adjust the values of the switching transistor, the current limiting resistor, and the calibration capacitor in the attenuation unit of this stage until the phase condition, the amplitude condition, and the area condition are met at the same time. The calibration of the n-th stage attenuation unit is completed.

[0067] If the simulation or test results show that the n-th stage attenuation unit meets the area condition but does not meet the amplitude condition and the phase condition, then adjust the values of the switching transistor, current limiting resistor and calibration capacitor in the attenuation unit of this stage, and adjust the values of the capacitor and transistor in the phase correction unit at the same time, until the phase condition, amplitude condition and area condition are met at the same time, and the calibration of the n-th stage attenuation unit is completed;

[0068] If the simulation or test results show that the n-th stage attenuation unit meets the amplitude condition but does not meet the area condition and the phase condition, the number of phase correction units is reduced, and the values of the calibration capacitor and the switching transistor in the phase correction unit are adjusted until the phase condition, amplitude condition and area condition are met at the same time, and the n-th stage attenuation unit is corrected;

[0069] If the simulation or test results show that the n-th stage attenuation unit meets the phase condition but does not meet the area condition and the amplitude condition, it is necessary to reduce the number of phase correction units, adjust the values of the calibration capacitor and the switching transistor in the phase correction unit, and adjust the values of the transistor, resistor, and capacitor in the attenuation unit of this stage until the phase condition, amplitude condition, and area condition are met at the same time, and the correction of the n-th stage attenuation unit is completed;

[0070] If the simulation or test results show that the phase condition, area condition and amplitude condition of the n-th stage attenuation unit are not met, the number of phase correction units is reduced, and the values of the capacitors and transistors in the phase correction units are adjusted, and the values of the transistors, resistors and capacitors in the attenuation units of this stage are adjusted until the phase condition, amplitude condition and area condition are met at the same time, and the correction of the n-th stage attenuation unit is completed.

[0071] A third embodiment of the present invention provides an electronic device, including:

[0072] at least one processor; and a memory communicatively coupled to the at least one processor;

[0073] The memory stores instructions that can be executed by the at least one processor, and the instructions are configured to execute the above-mentioned millimeter wave attenuator phase error correction method.

[0074] A fourth aspect of the present invention provides a computer-readable storage medium, wherein the computer-readable storage medium stores computer instructions, and the computer instructions are used to enable the computer to execute the above-mentioned millimeter-wave attenuator phase error correction method.

[0075] Features and beneficial effects of the present invention:

[0076] (1) After evaluating the test results of the existing switch-type digitally controlled step attenuator, the present invention adds a phase correction unit to the attenuation unit that does not meet the requirements to suppress the phase fluctuation between different attenuation states of the attenuator, thereby further reducing the overall RMS (root mean square) error of the millimeter wave attenuator.

[0077] (2) The present invention achieves high-precision attenuation control. Compared with traditional variable gain amplifiers, the embodiments of the present invention can provide a linear attenuation step with an attenuation step of 0.5 dB and an attenuation range of 32 dB.

[0078] (3) The present invention introduces a phase correction unit, which introduces more states for phase calibration to reduce phase fluctuations caused by PVT, thereby significantly reducing the RMS amplitude and phase error of the attenuator as a whole. In the embodiments of the present invention, simulations have demonstrated that the present invention can correct phase fluctuations within a range of 20°. BRIEF DESCRIPTION OF THE DRAWINGS

[0079] Figure 1 This is an overall flow chart of a millimeter wave attenuator phase error correction method according to an embodiment of the present invention.

[0080] Figure 2 is a circuit diagram of a phase correction unit in a specific embodiment of the present invention.

[0081] Figure 3 It is an overall structural diagram of a digital signal controlled switching type millimeter wave attenuator in a specific embodiment of the present invention.

[0082] Figure 4 It is a circuit structure diagram of a simplified T-shaped attenuation unit for achieving 0.5dB and 1dB attenuation amplitude control in a specific embodiment of the present invention and its equivalent schematic diagram working in reference and attenuation states.

[0083] Figure 5It is a circuit structure diagram of an attenuation unit of a bridge T-type structure for achieving 2dB and 4dB attenuation amplitude control in a specific embodiment of the present invention and its equivalent schematic diagram working in reference and attenuation states.

[0084] Figure 6 The present invention provides a circuit diagram of a π-type attenuation unit for achieving 8dB and 16dB attenuation amplitude control in a specific embodiment of the present invention, as well as an equivalent schematic diagram of the attenuation unit operating in reference and attenuation states.

[0085] Figure 7 1 is a diagram of phase test results of 64 states of an attenuator in a specific embodiment of the present invention that does not adopt the method described in this embodiment.

[0086] Figure 8 1 is a graph showing the amplitude test results of 64 states of an attenuator in a specific embodiment of the present invention that does not adopt the method described in this embodiment.

[0087] Figure 9 1 is a schematic diagram of the RMS amplitude and phase errors of an attenuator at 47 GHz to 55 GHz that does not adopt the method described in this embodiment in a specific embodiment of the present invention.

[0088] Figure 10 This is a test result diagram of the attenuation value of each attenuation unit of an attenuator that does not adopt the method described in this embodiment and the phase difference between the reference state and the attenuation state at 52 GHz in a specific embodiment of the present invention.

[0089] Figure 11 It is a schematic diagram of the circuit principle of an attenuator after adding a phase correction unit in a specific embodiment of the present invention.

[0090] Figure 12 The diagram is a comparison diagram of the attenuation value changes with frequency in a normal working state when the attenuation value is 8dB after the attenuation value of the attenuator with a phase correction unit added in a specific embodiment of the present invention and in different phase correction unit switching conditions.

[0091] Figure 13 The diagram is a comparison diagram of the phase variation with frequency in a normal working state of an attenuator with a phase correction unit added when the attenuation value is 8 dB and in different switching conditions of the phase correction unit in a specific embodiment of the present invention.

[0092] Figure 14 The diagram is a comparison diagram of the attenuation value changes with frequency in a normal working state when the attenuation value is 16 dB after the attenuation value of the attenuator with a phase correction unit added in a specific embodiment of the present invention and in different phase correction unit switching conditions.

[0093] Figure 15The figure is a comparison diagram of the phase variation with frequency in a normal working state of an attenuator with a phase correction unit added when the attenuation value is 16 dB and in different switching conditions of the phase correction unit in a specific embodiment of the present invention.

[0094] Figure 16 FIG1 is a schematic diagram showing how the insertion loss varies with frequency in 64 attenuation states in a specific embodiment of the present invention when operating under normal conditions.

[0095] Figure 17 1 is a schematic diagram showing the phase variation with frequency in 64 attenuation states under normal operation in a specific embodiment of the present invention.

[0096] Figure 18 It is a phase comparison diagram of 64 attenuation states under different phase correction unit switching conditions when the operating frequency is 52 GHz in a specific embodiment of the present invention.

[0097] Figure 19 It is a schematic diagram of amplitude comparison of 64 attenuation states under different phase correction unit switching conditions when the operating frequency is 52 GHz in a specific embodiment of the present invention.

[0098] Figure 20 Schematic diagram of the changes of RMS phase and amplitude errors with operating frequency in a specific embodiment of the present invention. DETAILED DESCRIPTION

[0099] In order to make the purpose, technical solutions and advantages of this application more clearly understood, this application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.

[0100] On the contrary, this application covers any alternatives, modifications, equivalents, and solutions made within the spirit and scope of this application as defined by the claims. Furthermore, to facilitate a better understanding of this application, certain specific details are described in detail below in the detailed description of this application. Those skilled in the art will be able to fully understand this application without these details.

[0101] A first embodiment of the present invention provides a millimeter wave attenuator phase error correction method, comprising:

[0102] Simulating or testing a millimeter-wave attenuator having N levels of attenuation units to obtain the attenuation value of each level of attenuation unit and the phase difference between a reference state and an attenuation state;

[0103] Based on the attenuation value and the phase difference, determine whether the attenuation unit needs to be corrected; wherein, if the deviation between the attenuation value and the theoretical attenuation value is greater than the preset maximum attenuation value deviation, the attenuation unit is amplitude corrected; if the phase difference is greater than the preset phase deviation limit, the attenuation unit is phase corrected; the phase correction includes: connecting m identical phase correction units in parallel to the tail capacitor of the attenuation unit, the phase correction unit provides a different phase by introducing a new attenuation state, thereby reducing the phase difference between the reference state and the attenuation state of the attenuation unit.

[0104] In a specific embodiment of the present invention, the phase error correction method of a millimeter wave attenuator is applied to a switching type millimeter wave attenuator with a tail capacitor. The overall process is as follows: Figure 1 As shown, the following steps are included:

[0105] 1) Simulate or test a switched millimeter-wave attenuator with tail capacitors controlled by an N-bit digital signal to obtain the attenuation value of each attenuation unit of the attenuator and the phase difference between the reference state and the attenuation state.

[0106] In this embodiment, the attenuator is composed of N stages of attenuation units connected in series, and the area of each stage of attenuation unit is S n , n=1,2,…,N; after simulation or testing, the attenuation value ATT of each attenuation unit is obtained n and the phase difference Δθ between the reference state and the decay state n .

[0107] At the same time, the phase deviation limit θ allowed for each attenuation unit is set n , the maximum area S allowed for each level of attenuation unit n,max And the theoretical attenuation value ATTideal of each attenuation unit n , then the deviation between the actual attenuation value and the theoretical attenuation value of each attenuation unit is recorded as |ATT n -ATTideal n |. Set the maximum deviation of the attenuation value allowed for each attenuation unit ATTmaxerror n , n=1,2,…,N.

[0108] In a specific embodiment of the present invention, in principle, the phase deviation limit θ allowed by each attenuation unit is n No more than 5°, the maximum area S allowed for each attenuation unit after correction n,max With the original area S n Satisfy between: The maximum deviation of the attenuation value allowed by each attenuation unit ATTmaxerror n No more than 0.5dB.

[0109] 2) Let n=1.

[0110] 3) Based on the result of step 1), the phase deviation Δθ between the reference state and the attenuation state of the n-th attenuation unit is calculated. n and the phase deviation limit θ allowed by the nth attenuation unit n Compare and compare at the same time |ATT n -ATTideal n | and ATTmaxerror n , to determine whether the attenuation unit of this level needs to be calibrated, where:

[0111] If Δθ n ≤θ n and|ATT n -ATTideal n |≤ATTmaxerror n , then no correction is required for the attenuation unit of this level, and then proceed to step 5);

[0112] If Δθ n ≤θ n and|ATT n -ATTideal n |>ATTmaxerror n , then the amplitude correction of the attenuation unit at this level is required but the phase correction is not required. During the amplitude correction, the value of the resistor or tail capacitor in the attenuation unit at this level needs to be adjusted so that the attenuation value of the attenuation unit at this level after adjustment meets the requirements. The attenuation value of the attenuation unit at this level after adjustment is recorded as ATTnew n , the phase difference between the reference state and the decay state is Δθnew n , and then re-simulate or test the attenuation unit of this level. In this embodiment, for the attenuation unit that needs to be corrected, re-simulate or test it once each time it is corrected. For amplitude correction, if the simulation or test results after correction meet |ATT n -ATTidenal n |≤ATTmaxerror n And Δθnew n ≤θ n , then the correction of the attenuation unit of this level is completed, and then go to step 5).

[0113] If Δθ n >θ n , and |ATT n -ATTidenal n |>ATTmaxerror n, then it is necessary to perform phase correction and amplitude correction on the attenuation unit of this stage. In this embodiment, during phase correction, m identical phase correction units are connected in parallel to the tail capacitor of the attenuation unit of this stage. Generally, m is equal to 1 under initial conditions. The function of the phase correction unit is to introduce a new attenuation state to provide a different phase, thereby reducing the phase difference between the reference state and the attenuation state of the attenuation unit of this stage, thereby achieving the purpose of phase correction; at the same time, the resistance and tail capacitance in the attenuation unit of this stage can be fine-tuned to achieve the purpose of amplitude correction, and then proceed to step 4).

[0114] If Δθ n >θ n And satisfy |ATT n -ATTideal n |≤ATTmaxerror n , then phase correction is required for this attenuation unit, but amplitude correction is not required. In this embodiment, phase correction is performed by connecting m identical phase correction units in parallel to the tail capacitors of this stage. Generally, m is equal to 1 under initial conditions. The function of the phase correction unit is to introduce a new attenuation state to provide a different phase, thereby reducing the phase difference between the reference state and the attenuation state of the attenuation unit of this stage, thereby achieving the purpose of phase correction. Then, the process proceeds to step 4).

[0115] Furthermore, generally speaking, due to the certain errors between the simulation and actual tail capacitance of electromagnetic simulation software, and due to the fluctuation of process angle and temperature, the phase difference between the reference state and the attenuation state of the large attenuation unit is difficult to obtain accurately through simulation, which leads to a large deviation between the simulation and test results. For this reason, it is necessary to introduce a phase correction unit into some attenuation units. In this embodiment, the circuit structure of the phase correction unit is as follows: Figure 2 As shown, including: calibration capacitor C S , switching transistor M0, inverter INV and current limiting resistor R S The phase correction unit includes two external ports: an access port and a control port. The source of the switching transistor M0 is grounded, and the drain is connected to the calibration capacitor C. S The control end of the phase correction unit is connected to one end of the inverter INV and the current limiting resistor R S One end of the current limiting resistor R S The other end and the calibration capacitor C SThe other end of the capacitor is connected to form the access terminal. Generally speaking, the calibration capacitor is an on-chip flat capacitor. If necessary, an interdigital capacitor can be selected. The size of the switching transistor is as small as possible without affecting the overall performance. In principle, there is no special value requirement for the inverter and the current limiting resistor. In a specific embodiment of the present invention, the current limiting resistor is 3.8kΩ, the inverter is composed of a group of complementary MOS transistors, the size of the PMOS transistor is 2μm / 60nm, the size of the NMOS transistor is 1μm / 60nm, and the calibration capacitor C S The value is 73.5fF. When the control signal is high, the gate of the switching transistor is low, and it operates in the normal attenuation state. When the control signal is low, the gate of the switching transistor is high, which is equivalent to increasing the tail capacitance value of the attenuation unit, thereby adjusting the phase error between the reference state and the attenuation state. In the embodiment of the present invention, all introduced phase correction units are identical.

[0116] In this embodiment, after introducing m identical phase correction units, there are 2 n-th stage attenuation units. m+1 There are 2 different states m One state works in the reference state, while the other two m The state works in the attenuation state. m The amplitude and phase of the two states are exactly the same, denoted as ATT n，0 and θ n，0 .

[0117] Note that 2 is working in the attenuation state m The attenuation value of each state is ATTnew n,p , p=1,…,2 m , where the phase difference between each reference state and the decay state is denoted as Δθnew n，p , p=1,…,2 m From 2 m The maximum value among the absolute values of the phase differences is recorded as Select the minimum value and record it as

[0118] 4) Checking the attenuation unit that has undergone phase correction in step 3) to determine whether the attenuation unit at this stage has completed phase correction; the specific steps are as follows:

[0119] 4-1) Complete simulation or testing of the attenuation unit with phase correction and compare parameters.

[0120] Among them, for the n-th stage attenuation unit with phase correction:

[0121] Compare and Δθ n ;

[0122] Compare and θ n ;

[0123] ATTnew n，1 to ATTideal n Make comparisons;

[0124] Compare the modified area S of level n n ′ and S n ;

[0125] like and

[0126] Then the attenuation unit of this level meets the phase condition;

[0127] If|ATTnew n，p -ATTideal n |≤ATTmaxerror n , p=1,…,2 m , then the attenuation unit of this level meets the amplitude condition.

[0128] like Then the attenuation unit of this level meets the area condition.

[0129] 4-2) Based on the result of step 4-1), determine whether the attenuation unit of this stage has been calibrated.

[0130] For the nth-order attenuation unit:

[0131] If the simulation or test results show that the n-th stage attenuation unit satisfies the phase condition, the amplitude condition, and the area condition at the same time, the calibration of the n-th stage attenuation unit is completed, and then the process proceeds to step 5).

[0132] If the simulation or test results show that the n-th stage attenuation unit meets the phase condition and the amplitude condition but does not meet the area condition, it is necessary to reduce the number of phase correction units and adjust the values and layout of the calibration capacitor and the switching transistor in the phase correction unit until the phase condition, the amplitude condition, and the area condition are met at the same time. The n-th stage attenuation unit is calibrated and then proceed to step 5).

[0133] If the simulation or test results show that the n-th stage attenuation unit meets the area condition and the amplitude condition but does not meet the phase condition, it is necessary to increase the number of phase correction units and adjust the values and layout of the calibration capacitor and the switching transistor in the phase correction unit until the phase condition, amplitude condition and area condition are met at the same time. The n-th stage attenuation unit is corrected and then proceed to step 5).

[0134] If the simulation or test results show that the n-th stage attenuation unit meets the area condition and the phase condition but does not meet the amplitude condition, it is necessary to adjust the values of the switching transistor, the current limiting resistor, and the calibration capacitor in the attenuation unit of this stage until the phase condition, the amplitude condition, and the area condition are met at the same time. The n-th stage attenuation unit is calibrated and then proceeds to step 5);

[0135] If the simulation or test results show that the n-th stage attenuation unit meets the area condition but does not meet the amplitude condition and the phase condition, it is necessary to adjust the values of the switching transistor, the current limiting resistor, and the calibration capacitor in the attenuation unit of this stage, and at the same time adjust the values of the capacitor and the transistor in the phase correction unit until the phase condition, the amplitude condition, and the area condition are all met. The n-th stage attenuation unit is calibrated, and then the process proceeds to step 5).

[0136] If the simulation or test results show that the n-th stage attenuation unit meets the amplitude condition but does not meet the area condition and the phase condition, it is necessary to reduce the number of phase correction units and adjust the values of the calibration capacitor and the switching transistor in the phase correction unit until the phase condition, amplitude condition and area condition are met at the same time. The n-th stage attenuation unit is calibrated and then proceed to step 5);

[0137] If the simulation or test results show that the n-th stage attenuation unit meets the phase condition but does not meet the area condition and the amplitude condition, it is necessary to reduce the number of phase correction units, adjust the values of the calibration capacitor and the switching transistor in the phase correction unit, and adjust the values of the transistor, resistor, and capacitor in the attenuation unit of this stage until the phase condition, amplitude condition, and area condition are met at the same time. The n-th stage attenuation unit is calibrated and then proceed to step 5).

[0138] If the simulation or test results show that the phase condition, area condition and amplitude condition of the n-th stage attenuation unit are not met, it is necessary to reduce the number of phase correction units, adjust the values of the capacitors and transistors in the phase correction units, and adjust the values of the transistors, resistors and capacitors in the attenuation units of this stage until the phase condition, amplitude condition and area condition are met at the same time. The correction of the n-th stage attenuation unit is completed, and then go to step 5).

[0139] 5) Let n=n+1, then return to step 3) and continue to calibrate the next stage attenuation unit until the Nth stage attenuation unit is calibrated and the method ends.

[0140] Furthermore, in this embodiment, for a general digital signal controlled switching type millimeter wave attenuator with tail capacitor, the structure is as follows: Figure 3 As shown, it is composed of multiple switch-type attenuation units with different attenuation amounts connected in series. Figure 3 In the example, the attenuation value of each attenuation unit is 0.5dB, 1dB, and finally MdB, where M is an integer power of 2.

[0141] Generally speaking, the attenuation unit of a switching millimeter-wave attenuator with tail capacitors consists of the following types:

[0142] The simplified T-type attenuation unit is used to achieve a smaller attenuation amplitude control. It consists of a transistor M1 of a specific size and a parallel resistor R of a specific value to ground. p1 and tail capacitor C tail1 Composition, circuit structure such as Figure 4 (a) shows that the gate of transistor M1 of a specific size is connected to the digital control signal, the drain and the resistor R p1 The attenuation unit has two working states: reference state and attenuation state. When the gate signal of transistor M1 is high, the attenuation unit works in attenuation state; otherwise, it works in reference state. The phase difference between the two states is denoted as α0, which determines the RMS phase error of the attenuator as a whole. When working in the reference state, Figure 4 As shown in (b), since transistor M1 is open, the open-circuit capacitance is C OFF1 , the RF signal will not be shunted to the ground and directly output, basically no additional insertion loss will be generated on the signal path; when working in the attenuation state, the transistor M1 is turned on, and the on-resistor R ON1 The ground is shunted, which will produce additional insertion loss in the signal path. The difference in insertion loss between the two states is the attenuation value of the stage. In actual design, it is generally adjusted by adjusting R p1 The value of transistor M1, the size of the tail capacitor C tail1 The value of is used to make the attenuation value and input and output return loss of the attenuation unit meet the requirements as much as possible.

[0143] The attenuation unit of the bridge T-type structure is used to achieve medium-level attenuation amplitude control. It consists of two transistors M2 and M3 of specific size, and a resistor R p2 、R S2 and tail capacitor C tail2 Composition, circuit structure such as Figure 5 As shown in (a), the gates of transistors M2 and M3 of a specific size are controlled by a set of digital signals with complementary polarities. The source of transistor M3 and resistor R p2 The other end of the resistor is connected to one end of the tail capacitor, and the other end of the tail capacitor is connected to the ground. The source and drain of the transistor M1 correspond to the input and output of the entire attenuation unit respectively. There are two resistors R in the module. S2The two ends of the first resistor are connected to the input of the attenuation unit and the drain of M3 respectively, and the two ends of the second resistor are connected to the drain of M2 and the output of the attenuation unit. The attenuation unit has two working states: reference state and attenuation state. When the gate signal of transistor M2 is low and the gate signal of M3 is high, the attenuation unit works in the attenuation state, transistor M2 is open, and the open-circuit capacitance is C OFF2 , transistor M3 is turned on, and the signal passes through the on-resistor R ON3 The current is shunted to the ground, thereby introducing additional insertion loss; otherwise, it works in the reference state, the transistor M3 is open, and the open-circuit capacitance of M3 is C OFF3 , while transistor M2 is turned on, the on resistance is R ON2 , so no additional insertion loss will be generated in the signal path. When working in the reference state, such as Figure 5 As shown in (b), the RF signal passes through the conductive M2 and two R S2 Parallel signal path; when working in the attenuation state, such as Figure 5 As shown in (c), since M3 is turned on, the signal passes through R P2 The path in series with the conducting M3 is directly attenuated to the ground, introducing a certain insertion loss. The difference in insertion loss between the reference state and the attenuation state is the attenuation value of this stage. The phase difference between the reference state and the attenuation state is recorded as α1. After the attenuation value of this stage, the return loss and the phase difference α1 between the reference state and the attenuation state are determined, by adjusting R p2 and R S2 The value of transistors M2 and M3 and the tail capacitor C tail2 , so that the attenuation value of this stage meets the set requirements, and ensures that the phase difference Δθ1 between the reference state and the attenuation state can be at a low level, while having a small return loss.

[0144] The attenuation unit of the π-type structure is used to achieve large attenuation amplitude control. The circuit structure is as follows Figure 6 As shown in (a), it consists of three transistors M4, M5, M6 and a resistor R p3 、R S3 and tail capacitor C tail3 , where transistors M5 and M6 have the same size and the same gate control signals. Transistors M4, M5, and M6 are controlled by a set of digital signals with complementary polarities. The drain of transistor M4 is connected to the overall input terminal of the overall attenuation unit, and the source of M4 is connected to the resistor R p3 The other end of the resistor is connected to one end of the tail capacitor, and the other end of the tail capacitor is connected to the ground. The source and drain of transistor M4 correspond to the input and output of the entire attenuation unit respectively. The drain of transistor M6 is connected to the overall output end of the entire attenuation unit, and the source of M6 is connected to the same resistor R p3The other end of the resistor is connected to one end of another tail capacitor, and the other end of the other tail capacitor is connected to the ground. The source and drain of the transistor M4 correspond to the input and output of the entire attenuation unit respectively. S3 The attenuation unit has two working states: reference state and attenuation state. When the gate signal of transistor M4 is high (i.e., the gate signal of M5 is low), the attenuation unit works in the reference state, transistors M5 and M6 are open, and the open-circuit capacitance of M5 and M6 is C OFF5 and C OFF6 , no additional insertion loss will be generated in the signal path; otherwise, it works in the attenuation state, the transistor M4 is open, and the open-circuit capacitance is C OFF4 , transistors M5 and M6 are turned on, the input signal is shunted to ground, and the signal path passes through the on-resistance R of M5 ON5 and the on-resistance R of M6 ON6 Additional insertion loss is generated. The difference in insertion loss between the reference and attenuated states is the attenuation value for that stage, and the phase difference between the reference and attenuated states is denoted as α2. After the attenuation value of this stage and the phase difference α2 between the reference and attenuated states are determined, simulation iterations are used to determine the sizes of switches M4, M5, and M6, as well as the value of the tail capacitor. The key goal is to ensure a low phase difference α2 between the reference and attenuated states and minimize return loss.

[0145] Furthermore, in this embodiment, an inductor for achieving impedance matching is connected between each attenuation unit. The inter-stage inductor in this embodiment is composed of two layers of metal, with the first metal forming a 1 / 2 circle in the clockwise direction, a second metal section being connected at the overall symmetrical center, and the remaining 1 / 2 circle in the counterclockwise direction being formed by the first metal.

[0146] The method described in this embodiment is further described in detail below with reference to specific embodiments.

[0147] This embodiment first gives the test results of a millimeter-wave attenuator with tail capacitors that does not adopt the method described in this embodiment, and re-optimizes the given attenuator at the layout level to reduce the RMS phase error without significantly increasing the chip area. It is also proved through simulation that the modified millimeter-wave attenuator has strong resistance to fluctuations caused by the process.

[0148] In a specific embodiment of the present invention, the test results of the phase and amplitude of the 64 states of the attenuator that does not adopt the method described in this embodiment are shown as follows: Figure 7 and Figure 8 As shown. Figure 7 It can be seen that from 47 GHz to 55 GHz, the phase fluctuation of the attenuator in different states ranges from 19.5° to 27.8°. Figure 9 FIG. 1 is a schematic diagram of the RMS amplitude and phase error of the attenuator in the embodiment not using the method described in this embodiment at 47 GHz to 55 GHz. Figure 9 As shown, the RMS phase error is 5.6° to 7.55°, which is relatively large among similar millimeter wave attenuators. Therefore, it is necessary to introduce the error correction method proposed in the present invention as a whole.

[0149] For the attenuator that does not adopt the method described in this embodiment, the attenuation value of each attenuation unit at the center frequency of 52 GHz and the phase difference between the reference state and the attenuation state are as follows: Figure 10 As shown in the figure, the attenuator has an attenuation range of 31.5dB and an attenuation step of 0.5dB. It consists of six attenuation units in series: 0.5dB, 1dB, 2dB, 4dB, 8dB, and 16dB.

[0150] In a specific embodiment of the present invention, the millimeter wave attenuator phase error correction method includes the following steps:

[0151] 1) Simulate or test a switched millimeter-wave attenuator with tail capacitors controlled by an N-bit digital signal to obtain the attenuation value of each attenuation unit of the attenuator and the phase difference between the reference state and the attenuation state.

[0152] In this embodiment, the allowable phase deviation limit θ1 to θ6 of each attenuation unit is set to 3°, the total area after adding the phase correction unit does not exceed 150% of the original layout area, and the maximum allowable attenuation value deviation ATTmaxerror1 to ATTmaxerror6 is set to 0.5dB.

[0153] 2) Based on the result of step 1), the phase deviation Δθ between the reference state and the attenuation state of the n-th attenuation unit is calculated. n and the phase deviation limit θ allowed by the nth attenuation unit n Compare and compare at the same time |ATT n -ATTideal n | and ATTmaxerror n , to determine whether the attenuation unit of this level needs to be calibrated, where:

[0154] In this embodiment, for the first-stage attenuation unit, the simulation results show that the attenuation value of the 0.5 dB attenuation unit is 0.55 dB, and the phase difference between the reference state and the attenuation state is 0.36°. Therefore, the first-stage attenuation unit does not require phase correction.

[0155] For the second-stage attenuation unit: the simulation shows that the attenuation value of the 1dB attenuation unit is 1.07dB, and the phase difference between the reference state and the attenuation state is 0.53°. Therefore, no phase correction is required for the second-stage attenuation unit.

[0156] For the third-stage attenuation unit: the simulation shows that the attenuation value of the 2dB attenuation unit is 1.88dB, and the phase difference between the reference state and the attenuation state is 2.93°. Therefore, no phase correction is required for the third-stage attenuation unit.

[0157] For the 4th-stage attenuation unit: the simulation shows that the attenuation value of the 4dB attenuation unit is 3.51dB, and the phase difference between the reference state and the attenuation state is 1.82°. Therefore, no phase correction is required for the 4th-stage attenuation unit.

[0158] For the fifth-stage attenuation unit: the simulation shows an attenuation value of 7.96 dB for the 8 dB attenuation unit. The phase difference between the reference state and the attenuation state is 4.08°, which is greater than 3°. Therefore, the fifth-stage attenuation unit requires phase correction, and the process proceeds to step 3).

[0159] For the 6th-level attenuation unit: the simulation results show that the attenuation value of the 16dB attenuation unit is 16.55dB, and the phase difference between the reference state and the attenuation state is 9.92°, which is greater than 3°. Therefore, the 6th-level attenuation unit needs to be phase corrected, and the process goes to step 4).

[0160] 3) After the 2-bit phase correction unit is introduced into the 5th-stage attenuation unit, there are 8 different states, 4 of which work in the reference state and the other 4 work in the attenuation state. The amplitude and phase of the 4 states working in the reference state are exactly the same, and are denoted as ATT. n，0 and θ n，0 The attenuation value of the four states working in the attenuation state after adjustment is ATTnew 5,1 to ATTnew 5,4 , the phase difference between the reference state and the decay state is Δθnew 5，1 to Δθnew 5，4 .

[0161] The maximum absolute value of the phase difference is Max{|Δθnew 5，1 |, ..., |Δθnew 5，4 |}, the minimum value is Min{|Δθnew 5，1 |, ..., |Δθnew 5，4 |}.

[0162] Compare Max{|Δθnew 5，1 |, ..., |Δθnew 5，4 |} and Δθ5, Min{|Δθnew 5，1 |, ..., |Δθnew 5，4 |} and θ5, compared with ATTnew 5,1and ATTideal5, comparing the modified areas S5′ and S5 of the fifth-level attenuation unit;

[0163] The simulation results show that Max{|Δθnew 5，1 |, ..., |Δθnew 5，4 |} is 7.94°, which is larger than the phase difference of 4.08° between the original reference state and the attenuation state of the attenuation unit of this level. 5，1 |, ..., |Δθnew 5，4 |} is less than θ5, so the attenuation unit of this level meets the phase condition;

[0164] Through simulation, we can find that for all four states, |ATTnew 5，p -ATTideal5|≤ATTmaxerror5 (p is an integer from 1 to 4), so the attenuation unit of this level meets the amplitude condition;

[0165] After inspection, The attenuation unit of this level meets the area condition;

[0166] The simulation results show that after the introduction of the two-stage phase correction unit, the fifth-stage attenuation unit meets the phase condition, amplitude condition and area condition at the same time, and the correction of the fifth-stage attenuation unit is completed.

[0167] 4) After the 2-bit phase correction unit is introduced into the 6th level attenuation, there are 8 different states, 4 of which work in the reference state and the other states work in the attenuation state. The amplitude and phase of the 4 states working in the reference state are exactly the same, and are denoted as ATT. 6，0 and θ 6，0 The attenuation value of the four states working in the attenuation state after adjustment is ATTnew 6,1 to ATTnew 6,4 , the phase difference between the reference state and the decay state is Δθnew 6，1 to Δθnew 6，4 .

[0168] The maximum absolute value of the phase difference is Max{|Δθnew 6，1 |, ..., |Δθnew 6，4 |}, the minimum value is Min{|Δθnew 6，1 |, ..., |Δθnew 6，4 |}.

[0169] Compare Max{|Δθnew 6，1 |,……,Δθnew 6，4 |} and Δθ5, Min{|Δθnew 6，1 |, ..., |Δθnew 6，4|} and θ6, compared with ATTnew 6,1 and ATTideal6, comparing the modified areas S6′ and S6 at level 6;

[0170] The simulation results show that Max{|Δθnew 6，1 |, ..., |Δθnew 6，4 |} is 15.23°, which is larger than the phase difference of 9.92° between the original reference state and the attenuation state of the attenuation unit of this level. Min{|Δθnew 6,1 |,……,|Δθnew 6,4 |} is 1.79°, which is less than θ6, so the attenuation unit of this level meets the phase condition;

[0171] The simulation results show that for all four states, |ATTnew 6,p -ATTideal6|≤ATTmaxerror6, p=1,…,4, so the attenuation unit of this level meets the amplitude condition;

[0172] After inspection, The attenuation unit of this level meets the area condition;

[0173] The simulation results show that after the introduction of the two-stage phase correction unit, the sixth stage satisfies the phase condition, amplitude condition and area condition at the same time, ending the optimization of this stage.

[0174] In this embodiment, the circuit principle diagram of the attenuator after adding two phase correction units to the 8dB attenuation unit and the 16dB attenuation unit is as follows: Figure 11 This millimeter-wave attenuator consists of seven series-connected attenuation units. Two simplified T-type attenuation units achieve 0.5dB and 1dB attenuation, two bridge-T-type attenuation units achieve 2dB and 4dB attenuation, and three π-type units achieve 8dB and 16dB attenuation, with the 16dB attenuation achieved by cascading two 8dB attenuation units. Eight inductors are used for matching between the input, output, and attenuation stages.

[0175] For the simplified T-shaped structure of the small attenuation unit, it is used to achieve 0.5dB and 1dB attenuation amplitude control. For the 0.5dB and 1dB attenuation units, the return loss of the two attenuation units is set to be less than -10dB, the insertion loss in the reference state is as small as possible, and the phase error is as low as possible. For the 0.5dB attenuation unit, through simulation iteration, it can be obtained: the resistance R p1 The value of the tail capacitor C is 122Ω. tail1 The size of the switch tube M1 is 1μm / 60nm. For a 1dB attenuation unit, the following resistance R p1 The value of the tail capacitor C is 81Ω. tail1The size of the switch tube M1 is 3.6μm / 60nm.

[0176] For the medium attenuation unit of the bridge T-type structure, it is used to achieve 2dB and 4dB attenuation amplitude control. For both 2dB and 4dB attenuation units, the return loss is set to be less than -10dB, the insertion loss in the reference state is as small as possible, and the phase error is as low as possible. For the 2dB attenuation unit, through simulation iteration, the resistance R p2 The value of the resistor R is 70Ω. S2 The value of the tail capacitor C is 8.5Ω. tail2 The size of the switch tube M2 is 40μm / 60nm, and the size of the switch tube M3 is 6μm / 60nm. For the 4dB attenuation unit, the following resistance R p2 The value of the resistor R is 71Ω. S2 The value of the tail capacitor C is 20.5Ω. tail2 The size of the switch tube M2 is 24μm / 60nm, and the size of the switch tube M3 is 6μm / 60nm.

[0177] For the large attenuation unit of the π-type structure, it is used to achieve 8dB and 16dB attenuation amplitude control. For both 8dB and 16dB attenuation units, the return loss is set to be less than -10dB, the insertion loss in the reference state is as small as possible, and the phase error is as low as possible. For the 8dB attenuation unit, the following can be obtained through simulation: p3 The value of the resistor R is 50Ω. S3 The value of the tail capacitor C is 50Ω. tail3 The size of the switch tube M4 is 24μm / 60nm, and the size of the switch tube M5 / M6 is 16μm / 60nm. For the 16dB attenuation unit, it is composed of two π-type units in series. Through simulation, we can get: p2 The value of the resistor R is 45Ω. S2 The value of the tail capacitor C is 58Ω. tail3 The size of the switch tube M4 is 24μm / 60nm, and the size of the switch tube M5 / M6 is 16μm / 60nm.

[0178] In this embodiment, the inter-stage matching inductor of each attenuation unit is composed of two metal layers. The first metal forms a half-turn clockwise, connected by a second metal section at the center of symmetry. The remaining half-turn counterclockwise is also composed of the first metal. The first metal layer is metal layer M9, which is part of the 65nm CMOS process, and the second metal layer is metal layer M8, which is part of the 65nm CMOS process. Figure 11The inductance values from left to right are: 51.3pH, 65pH, 67.8pH, 66.5pH, 70.4pH, 69.7pH, 71.9pH, and 143.8pH.

[0179] Figure 12 This diagram compares the frequency variation of attenuation in a specific embodiment of the present invention, when an attenuation value of 8dB is achieved using a phase correction unit in normal operation and with the phase correction unit enabled or disabled. It can be seen that the insertion loss fluctuates by only 0.35dB across the 16 different states created by the attenuation unit being enabled or disabled, a relatively low level.

[0180] Figure 13 This is a comparison diagram of the phase difference variation with frequency in a normal working state of an attenuator with a phase correction unit added when the attenuation value is 8dB and in different phase correction unit switching conditions in a specific embodiment of the present invention. 5,1 |,……,|Δθnew 5,4 |} is about 7.5°, which is larger than the original phase deviation of 4.03°, so it can play a phase compensation role.

[0181] Figure 14 This diagram compares the frequency variation of attenuation in a specific embodiment of the present invention, when the attenuation value is 16dB, using a phase correction unit in normal operation, and with the phase correction unit enabled or disabled. It can be seen that the insertion loss fluctuates by a minimal 0.35dB across the 16 different states created by the attenuation unit being enabled or disabled.

[0182] Figure 15 This is a comparison diagram of the phase difference variation with frequency in a normal working state of an attenuator with a phase correction unit added when the attenuation value is 16dB and in different phase correction unit switching conditions in a specific embodiment of the present invention. 6,1 |,……,|Δθnew 6,4 |} is about 15°, which is larger than the original phase deviation of 9.92°, so it can play a phase compensation role.

[0183] Figure 16 A schematic diagram shows how insertion loss varies with frequency for 64 attenuation states under normal operation in a specific embodiment of the present invention. The figure shows an overall attenuation range of 31.5 dB, with an attenuation step size of 0.5 dB. The millimeter-wave attenuator with a phase correction unit in this embodiment exhibits an insertion loss of 9.49 dB at 52 GHz.

[0184] Figure 17FIG. 1 is a schematic diagram showing the phase variation with frequency in 64 attenuation states in a specific embodiment of the present invention under normal working conditions. Figure 8 It can be seen that at 50 GHz, the phases corresponding to different attenuation states are basically the same, and the fluctuation range is less than 2.5°, which ensures that the attenuator has a low RMS phase error.

[0185] Figure 18 This diagram shows a phase comparison of 64 attenuation states under different phase correction unit switching conditions at a 52 GHz operating frequency according to a specific embodiment of the present invention. The figure demonstrates that the introduction of the phase correction unit provides more phase correction space for attenuation states above 16 dB. For attenuation values above 24 dB, a 20° phase correction range is provided; for attenuation values between 16 and 24 dB, a 15° phase correction range is provided; and for attenuation values between 8 and 16 dB, an 8° phase correction range is provided.

[0186] Figure 19 This diagram compares the amplitudes of 64 attenuation states in a specific embodiment of the present invention, operating at 52 GHz with different phase correction unit on / off conditions. As can be seen from the figure, the amplitudes of the attenuation states vary slightly after the phase correction unit is introduced, and do not affect the module's normal attenuation function.

[0187] In this embodiment, for the millimeter wave attenuator after the phase correction unit is introduced, the simulation results after the full layout show that its RMS amplitude error in the operating frequency band of 47-55GHz is 0.12dB, and the RMS phase error is 0.5-1.6°. The RMS amplitude and phase errors vary with frequency as shown in the following figure: Figure 20 As shown, compared to a millimeter-wave attenuator without a phase correction unit, its RMS amplitude and phase errors are significantly reduced, and the phase has an adjustable range of at least 8° and at most 20°, further optimizing the millimeter-wave attenuator's phase characteristics and its robustness to fluctuations in process angle, power supply voltage, and temperature. This demonstrates the effectiveness of the phase correction method for millimeter-wave attenuators.

[0188] To implement the above embodiment, a second embodiment of the present invention provides a millimeter wave attenuator phase error correction device, which is applied to a switching type millimeter wave attenuator with a tail capacitor, comprising:

[0189] A simulation test module is used to simulate or test a millimeter wave attenuator having N levels of attenuation units to obtain the attenuation value of each level of attenuation unit and the phase difference between the reference state and the attenuation state;

[0190] A correction module is used to determine whether the attenuation unit needs to be corrected based on the attenuation value and the phase difference; wherein, if the deviation between the attenuation value and the theoretical attenuation value is greater than a preset maximum attenuation value deviation, the attenuation unit is amplitude corrected; if the phase difference is greater than a preset phase deviation limit, the attenuation unit is phase corrected; the phase correction includes: connecting m identical phase correction units in parallel to the tail capacitor of the attenuation unit, the phase correction units providing different phases by introducing new attenuation states, thereby reducing the phase difference between the reference state and the attenuation state of the attenuation unit.

[0191] In a specific embodiment of the present invention, the phase correction unit includes: a calibration capacitor, a switching transistor, an inverter and a current limiting resistor; wherein the source of the switching transistor is grounded, and the drain is connected to one end of the calibration capacitor; the control end of the phase correction unit is respectively connected to one end of the inverter and one end of the current limiting resistor, and the other end of the current limiting resistor and the other end of the calibration capacitor are connected to form the access end of the phase correction unit.

[0192] In a specific embodiment of the present invention, it also includes:

[0193] The phase deviation between the reference state and the attenuation state of the nth attenuation unit in the attenuator is Δθ n , the phase deviation limit allowed by the nth attenuation unit is θ n , the attenuation value of the nth level attenuation unit is ATT n The theoretical attenuation value of the nth level attenuation unit is ATTideal n The maximum deviation of the attenuation value allowed by the n-th level attenuation unit is ATTmaxerror n , n=1,2,……,N;

[0194] If Δθ n ≤θ n and|ATT n -ATTideal n |≤ATTmaxerror n , then no correction is performed on the attenuation unit of this level;

[0195] If Δθ n ≤θ n and|ATT n -ATTideal n |>ATTmaxerror n , then the amplitude correction is performed on the attenuation unit of this level; wherein, during the amplitude correction, the value of the resistor or tail capacitor in the attenuation unit of this level is adjusted, and the attenuation value of the attenuation unit after adjustment is recorded as ATTnew n, the phase difference between the reference state and the decay state is Δθnew n , then re-simulate or test the attenuation unit of this level. If |ATT n -ATTideal n |≤ATTmaxerror n And Δθnew n ≤θ n , then the correction of the attenuation unit of this level is completed;

[0196] If Δθ n >θ n , and |ATT n -ATTideal n |>ATTmaxerror n , then perform phase correction and amplitude correction on the attenuation unit of this level;

[0197] If Δθ n >θ n And satisfy |ATT n -ATTideal n |≤ATTmaxerror n , then perform phase correction on the attenuation unit of this level.

[0198] In a specific embodiment of the present invention, it also includes:

[0199] After connecting m identical phase correction units in parallel, there are 2 attenuation units in the nth stage. m+1 There are 2 different states m One state works in the reference state, and the other two m The first state works in the attenuation state; the second state works in the reference state. m The amplitude and phase of the two states are exactly the same, denoted as ATT n，0 and θ n,0 ;

[0200] Note that 2 is working in the attenuation state m The attenuation value of each state is ATTnew n,p , p=1,…,2 m , where the phase difference between each reference state and the decay state is denoted as Δθnew n,p , p=1,…,2 m ;

[0201] From 2 m The maximum value among the absolute values of the phase differences is recorded as Select the minimum value and record it as

[0202] In a specific embodiment of the present invention, it also includes:

[0203] 1) Perform simulation or testing on the nth stage attenuation unit with phase correction and then compare parameters, where:

[0204] Compare and Δθ n ;

[0205] Compare and θ n ;

[0206] ATTnew n,1 to ATTideal n Make comparisons;

[0207] Compare the modified area S of level n n ′ and S n :

[0208] like and

[0209] Then the attenuation unit of this level meets the phase condition;

[0210] If|ATTnew n，p -ATTideal n |≤ATTmaxerror n , p=1,…,2 m , then the attenuation unit of this level meets the amplitude condition;

[0211] like Then the attenuation unit of this level meets the area condition;

[0212] 2) Based on the result of step 1), determine whether the attenuation unit of this stage has been calibrated;

[0213] If the simulation or test results show that the n-th stage attenuation unit satisfies the phase condition, the amplitude condition, and the area condition at the same time, the calibration of the n-th stage attenuation unit is completed;

[0214] If the simulation or test results show that the n-th stage attenuation unit meets the phase condition and the amplitude condition but does not meet the area condition, the number of phase correction units is reduced, and the values and layout of the calibration capacitors and switching transistors in the phase correction units are adjusted until the phase condition, amplitude condition, and area condition are met at the same time, and the n-th stage attenuation unit is corrected;

[0215] If the simulation or test results show that the n-th stage attenuation unit meets the area condition and the amplitude condition but does not meet the phase condition, then increase the number of phase correction units and adjust the values and layout of the calibration capacitor and the switch transistor in the phase correction unit until the phase condition, amplitude condition and area condition are met at the same time, and the n-th stage attenuation unit is corrected;

[0216] If the simulation or test results show that the n-th stage attenuation unit meets the area condition and the phase condition but does not meet the amplitude condition, then adjust the values of the switching transistor, the current limiting resistor, and the calibration capacitor in the attenuation unit of this stage until the phase condition, the amplitude condition, and the area condition are met at the same time. The calibration of the n-th stage attenuation unit is completed.

[0217] If the simulation or test results show that the n-th stage attenuation unit meets the area condition but does not meet the amplitude condition and the phase condition, then adjust the values of the switching transistor, current limiting resistor and calibration capacitor in the attenuation unit of this stage, and adjust the values of the capacitor and transistor in the phase correction unit at the same time, until the phase condition, amplitude condition and area condition are met at the same time, and the calibration of the n-th stage attenuation unit is completed;

[0218] If the simulation or test results show that the n-th stage attenuation unit meets the amplitude condition but does not meet the area condition and the phase condition, the number of phase correction units is reduced, and the values of the calibration capacitor and the switching transistor in the phase correction unit are adjusted until the phase condition, amplitude condition and area condition are met at the same time, and the n-th stage attenuation unit is corrected;

[0219] If the simulation or test results show that the n-th stage attenuation unit meets the phase condition but does not meet the area condition and the amplitude condition, it is necessary to reduce the number of phase correction units, adjust the values of the calibration capacitor and the switching transistor in the phase correction unit, and adjust the values of the transistor, resistor, and capacitor in the attenuation unit of this stage until the phase condition, amplitude condition, and area condition are met at the same time, and the correction of the n-th stage attenuation unit is completed;

[0220] If the simulation or test results show that the phase condition, area condition and amplitude condition of the n-th stage attenuation unit are not met, the number of phase correction units is reduced, and the values of the capacitors and transistors in the phase correction units are adjusted, and the values of the transistors, resistors and capacitors in the attenuation units of this stage are adjusted until the phase condition, amplitude condition and area condition are met at the same time, and the correction of the n-th stage attenuation unit is completed.

[0221] This can reduce the phase fluctuation between different states of the millimeter-wave attenuator and the overall RMS (root mean square) phase error without significantly increasing the chip area.

[0222] To implement the above embodiment, a third aspect of the present invention provides an electronic device, including:

[0223] at least one processor; and a memory communicatively coupled to the at least one processor;

[0224] The memory stores instructions that can be executed by the at least one processor, and the instructions are configured to execute the above-mentioned millimeter wave attenuator phase error correction method.

[0225] To implement the above embodiment, a fourth aspect of the present invention provides a computer-readable storage medium, wherein the computer-readable storage medium stores computer instructions, and the computer instructions are used to enable the computer to execute the above-mentioned millimeter-wave attenuator phase error correction method.

[0226] It should be noted that the computer-readable medium mentioned above in the present disclosure may be a computer-readable signal medium or a computer-readable storage medium, or any combination of the two. A computer-readable storage medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device, or component, or any combination of the above. More specific examples of computer-readable storage media may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In the present disclosure, a computer-readable storage medium may be any tangible medium that contains or stores a program that can be used by or in conjunction with an instruction execution system, device, or component. In the present disclosure, a computer-readable signal medium may include a data signal propagated in baseband or as part of a carrier wave, which carries computer-readable program code. Such a propagated data signal may take a variety of forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination of the above. A computer-readable signal medium may also be any computer-readable medium other than a computer-readable storage medium that can transmit, propagate, or transport a program for use by or in conjunction with an instruction execution system, apparatus, or device. The program code contained on the computer-readable medium may be transmitted using any suitable medium, including but not limited to wires, optical cables, RF (radio frequency), etc., or any suitable combination thereof.

[0227] The computer-readable medium may be included in the electronic device or may exist independently and not incorporated into the electronic device. The computer-readable medium carries one or more programs that, when executed by the electronic device, cause the electronic device to perform the millimeter-wave attenuator phase error correction method of the above-described embodiment.

[0228] Computer program code for performing the operations of the present disclosure may be written in one or more programming languages, or a combination thereof, including object-oriented programming languages such as Java, Smalltalk, C++, and conventional procedural programming languages such as "C" or similar programming languages. The program code may be executed entirely on the user's computer, partially on the user's computer, as a stand-alone software package, partially on the user's computer and partially on a remote computer, or entirely on the remote computer or server. In cases involving a remote computer, the remote computer may be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer (e.g., through the Internet using an Internet service provider).

[0229] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0230] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of such features. Throughout the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0231] Any process or method description in a flowchart or otherwise described herein may be understood to represent a module, segment or portion of code comprising one or more executable instructions for implementing the steps of a specific logical function or process, and the scope of the preferred embodiments of the present application includes alternative implementations in which functions may be performed out of the order shown or discussed, including performing functions in a substantially simultaneous manner or in the reverse order depending on the functions involved, which should be understood by those skilled in the art to which the embodiments of the present application belong.

[0232] The logic and / or steps represented in the flowcharts or otherwise described herein, for example, can be considered as a sequenced list of executable instructions for implementing the logical functions, and can be embodied in any computer-readable medium for use by, or in conjunction with, an instruction execution system, apparatus, or device (e.g., a computer-based system, a system including a processor, or other system that can fetch and execute instructions from an instruction execution system, apparatus, or device). For purposes of this specification, a "computer-readable medium" can be any device that can contain, store, communicate, propagate, or transport a program for use by, or in conjunction with, an instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of computer-readable media include the following: an electrical connection with one or more wires (electronic devices), a portable computer disk cartridge (magnetic device), random access memory (RAM), read-only memory (ROM), erasable and programmable read-only memory (EPROM or flash memory), fiber optic devices, and a portable compact disc read-only memory (CDROM). Furthermore, the computer-readable medium may even be paper or other suitable medium on which the program is printed, since the program may be obtained electronically, for example, by optically scanning the paper or other medium and then editing, interpreting or otherwise processing it in a suitable manner if necessary, and then storing it in a computer memory.

[0233] It should be understood that various parts of the present application can be implemented using hardware, software, firmware, or a combination thereof. In the above embodiments, multiple steps or methods can be implemented using software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented using hardware, as in another embodiment, any one of the following technologies known in the art or a combination thereof can be used to implement: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application-specific integrated circuit having a suitable combination of logic gate circuits, a programmable gate array (PGA), a field programmable gate array (FPGA), etc.

[0234] Those skilled in the art will understand that all or part of the steps in the method of the above embodiment can be completed by instructing related hardware through a program, and the program can be stored in a computer-readable storage medium. When the program is executed, it includes one or a combination of the steps of the method embodiment.

[0235] In addition, the functional units in the various embodiments of the present application may be integrated into a processing module, or each unit may exist physically separately, or two or more units may be integrated into a module. The above-mentioned integrated module may be implemented in the form of hardware or in the form of a software functional module. If the integrated module is implemented in the form of a software functional module and sold or used as an independent product, it may also be stored in a computer-readable storage medium.

[0236] The storage medium mentioned above may be a read-only memory, a magnetic disk, or an optical disk, etc. Although the embodiments of the present application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present application. Persons skilled in the art may make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present application.

Claims

1. A millimeter wave attenuator phase error correction method, applied to a switching type millimeter wave attenuator with tail capacitor, characterized in that: include: Simulating or testing a millimeter-wave attenuator having N levels of attenuation units to obtain the attenuation value of each level of attenuation unit and the phase difference between a reference state and an attenuation state; Based on the attenuation value and the phase difference, determine whether the attenuation unit needs to be corrected; wherein, if the deviation between the attenuation value and the theoretical attenuation value is greater than the preset maximum attenuation value deviation, the attenuation unit is amplitude corrected; if the phase difference is greater than the preset phase deviation limit, the attenuation unit is phase corrected; the phase correction includes: connecting m identical phase correction units in parallel to the tail capacitor of the attenuation unit, the phase correction unit provides a different phase by introducing a new attenuation state, thereby reducing the phase difference between the reference state and the attenuation state of the attenuation unit.

2. The method according to claim 1, characterized in that The phase correction unit includes: a calibration capacitor, a switching transistor, an inverter and a current-limiting resistor; wherein the source of the switching transistor is grounded, and the drain is connected to one end of the calibration capacitor; the control end of the phase correction unit is respectively connected to one end of the inverter and one end of the current-limiting resistor, and the other end of the current-limiting resistor and the other end of the calibration capacitor are connected to form the access end of the phase correction unit.

3. The method according to claim 2, characterized in that Also includes: The phase deviation between the reference state and the attenuation state of the nth attenuation unit in the attenuator is Δθ n , the phase deviation limit allowed by the nth attenuation unit is θ n , the attenuation value of the nth level attenuation unit is ATT n The theoretical attenuation value of the nth level attenuation unit is ATTideal n The maximum deviation of the attenuation value allowed by the n-th level attenuation unit is ATTmaxerror n , n=1,2,……,N; If Δθ n ≤θ n and|ATT n -ATTideal n |≤ATTmaxerror n , then no correction is performed on the attenuation unit of this level; If Δθ n ≤θ n and|ATT n -ATTideal n |>ATTmaxerror n , then the amplitude correction is performed on the attenuation unit of this level; wherein, during the amplitude correction, the value of the resistor or tail capacitor in the attenuation unit of this level is adjusted, and the attenuation value of the attenuation unit after adjustment is recorded as ATTnew n , the phase difference between the reference state and the decay state is Δθnew n , then re-simulate or test the attenuation unit of this level. If |ATT n -ATTideal n |≤ATTmaxerror n And Δθnew n ≤θ n , then the correction of the attenuation unit of this level is completed; If Δθ n >θ n , and |ATT n -ATTideal n |>ATTmaxerror n , then perform phase correction and amplitude correction on the attenuation unit of this level; If Δθ n >θ n And satisfy |ATT n -ATTideal n |≤ATTmaxerror n , then perform phase correction on the attenuation unit of this level.

4. The method according to claim 3, characterized in that Also includes: After connecting m identical phase correction units in parallel, there are 2 attenuation units in the nth stage. m+1 There are 2 different states m One state works in the reference state, and the other two m The first state works in the attenuation state; the second state works in the reference state. m The amplitude and phase of the two states are exactly the same, denoted as ATT n，0 and θ n，0 ; Note that 2 is working in the attenuation state m The attenuation value of each state is ATTnew n,p , p=1,…,2 m , where the phase difference between each reference state and the decay state is denoted as Δθnew n，p , p=1,…,2 m ; From 2 m The maximum value among the absolute values of the phase differences is recorded as Select the minimum value and record it as 5. The method according to claim 4, characterized in that Also includes: 1) Perform simulation or testing on the nth stage attenuation unit with phase correction and then compare parameters, where: Compare and Δθ n ; Compare and θ n ; ATTnew n，1 to ATTideal n Make comparisons; Compare the modified area S of level n n ′ and S n : like and Then the attenuation unit of this level meets the phase condition; If|ATTnew n,p -ATTideal n |≤ATTmaxerror n , p=1,…,2 m , then the attenuation unit of this level meets the amplitude condition; like Then the attenuation unit of this level meets the area condition; 2) Based on the result of step 1), determine whether the attenuation unit of this stage has been calibrated; If the simulation or test results show that the n-th stage attenuation unit satisfies the phase condition, the amplitude condition, and the area condition at the same time, the calibration of the n-th stage attenuation unit is completed; If the simulation or test results show that the n-th stage attenuation unit meets the phase condition and the amplitude condition but does not meet the area condition, the number of phase correction units is reduced, and the values and layout of the calibration capacitors and switching transistors in the phase correction units are adjusted until the phase condition, amplitude condition, and area condition are met at the same time, and the n-th stage attenuation unit is corrected; If the simulation or test results show that the n-th stage attenuation unit meets the area condition and the amplitude condition but does not meet the phase condition, then increase the number of phase correction units and adjust the values and layout of the calibration capacitor and the switch transistor in the phase correction unit until the phase condition, amplitude condition and area condition are met at the same time, and the n-th stage attenuation unit is corrected; If the simulation or test results show that the n-th stage attenuation unit meets the area condition and the phase condition but does not meet the amplitude condition, then adjust the values of the switching transistor, the current limiting resistor, and the calibration capacitor in the attenuation unit of this stage until the phase condition, the amplitude condition, and the area condition are met at the same time. The calibration of the n-th stage attenuation unit is completed. If the simulation or test results show that the n-th stage attenuation unit meets the area condition but does not meet the amplitude condition and the phase condition, then adjust the values of the switching transistor, current limiting resistor and calibration capacitor in the attenuation unit of this stage, and adjust the values of the capacitor and transistor in the phase correction unit at the same time, until the phase condition, amplitude condition and area condition are met at the same time, and the calibration of the n-th stage attenuation unit is completed; If the simulation or test results show that the n-th stage attenuation unit meets the amplitude condition but does not meet the area condition and the phase condition, the number of phase correction units is reduced, and the values of the calibration capacitor and the switching transistor in the phase correction unit are adjusted until the phase condition, amplitude condition and area condition are met at the same time, and the n-th stage attenuation unit is corrected; If the simulation or test results show that the n-th stage attenuation unit meets the phase condition but does not meet the area condition and the amplitude condition, it is necessary to reduce the number of phase correction units, adjust the values of the calibration capacitor and the switching transistor in the phase correction unit, and adjust the values of the transistor, resistor, and capacitor in the attenuation unit of this stage until the phase condition, amplitude condition, and area condition are met at the same time, and the correction of the n-th stage attenuation unit is completed; If the simulation or test results show that the phase condition, area condition and amplitude condition of the n-th stage attenuation unit are not met, the number of phase correction units is reduced, and the values of the capacitors and transistors in the phase correction units are adjusted, and the values of the transistors, resistors and capacitors in the attenuation units of this stage are adjusted until the phase condition, amplitude condition and area condition are met at the same time, and the correction of the n-th stage attenuation unit is completed.

6. A millimeter wave attenuator phase error correction device, applied to a switching type millimeter wave attenuator with a tail capacitor, characterized in that: include: A simulation test module is used to simulate or test a millimeter wave attenuator having N levels of attenuation units to obtain the attenuation value of each level of attenuation unit and the phase difference between the reference state and the attenuation state; A correction module is used to determine whether the attenuation unit needs to be corrected based on the attenuation value and the phase difference; wherein, if the deviation between the attenuation value and the theoretical attenuation value is greater than a preset maximum attenuation value deviation, the attenuation unit is amplitude corrected; if the phase difference is greater than a preset phase deviation limit, the attenuation unit is phase corrected; the phase correction includes: connecting m identical phase correction units in parallel to the tail capacitor of the attenuation unit, the phase correction units providing different phases by introducing new attenuation states, thereby reducing the phase difference between the reference state and the attenuation state of the attenuation unit.

7. The device according to claim 6, characterized in that The phase correction unit includes: a calibration capacitor, a switching transistor, an inverter and a current-limiting resistor; wherein the source of the switching transistor is grounded, and the drain is connected to one end of the calibration capacitor; the control end of the phase correction unit is respectively connected to one end of the inverter and one end of the current-limiting resistor, and the other end of the current-limiting resistor and the other end of the calibration capacitor are connected to form the access end of the phase correction unit.

8. The device according to claim 7, characterized in that Also includes: The phase deviation between the reference state and the attenuation state of the nth attenuation unit in the attenuator is Δθ n , the phase deviation limit allowed by the nth attenuation unit is θ n , the attenuation value of the nth level attenuation unit is ATT n The theoretical attenuation value of the nth level attenuation unit is ATTideal n The maximum deviation of the attenuation value allowed by the n-th level attenuation unit is ATTmaxerror n , n=1,2,……,N; If Δθ n ≤θ n and|ATT n -ATTideal n |≤ATTmaxerror n , then no correction is performed on the attenuation unit of this level; If Δθ n ≤θ n and|ATT n -ATTideal n |>ATTmaxerror n , then the amplitude correction is performed on the attenuation unit of this level; wherein, during the amplitude correction, the value of the resistor or tail capacitor in the attenuation unit of this level is adjusted, and the attenuation value of the attenuation unit after adjustment is recorded as ATTnew n , the phase difference between the reference state and the decay state is Δθnew n , then re-simulate or test the attenuation unit of this level. If |ATT n -ATTideal n |≤ATTmaxerror n And Δθnew n ≤θ n , then the correction of the attenuation unit of this level is completed; If Δθ n >θ n , and |ATT n -ATTideal n |>ATTmaxerror n , then perform phase correction and amplitude correction on the attenuation unit of this level; If Δθ n >θ n And satisfy |ATT n -ATTideal n |≤ATTmaxerror n , then perform phase correction on the attenuation unit of this level.

9. The device according to claim 8, characterized in that Also includes: After connecting m identical phase correction units in parallel, there are 2 attenuation units in the nth stage. m+1 There are 2 different states m One state works in the reference state, and the other two m The first state works in the attenuation state; the second state works in the reference state. m The amplitude and phase of the two states are exactly the same, denoted as ATT n，0 and θ n，0 ; Note that 2 is working in the attenuation state m The attenuation value of each state is ATTnew n,p , p=1,…,2 m , where the phase difference between each reference state and the decay state is denoted as Δθnew n,p , p=1,…,2 m ; From 2 m The maximum value among the absolute values of the phase differences is recorded as Select the minimum value and record it as 10. The device according to claim 9, characterized in that Also includes: 1) Perform simulation or testing on the nth stage attenuation unit with phase correction and then compare parameters, where: Compare and Δθ n ; Compare and θ n ; ATTnew n，1 to ATTideal n Make comparisons; Compare the modified area S of level n n ′ and S n : like and Then the attenuation unit of this level meets the phase condition; If|ATTnew n,p -ATTideal n |≤ATTmaxerror n , p=1,…,2 m , then the attenuation unit of this level meets the amplitude condition; like Then the attenuation unit of this level meets the area condition; 2) Based on the result of step 1), determine whether the attenuation unit of this stage has been calibrated; If the simulation or test results show that the n-th stage attenuation unit satisfies the phase condition, the amplitude condition, and the area condition at the same time, the calibration of the n-th stage attenuation unit is completed; If the simulation or test results show that the n-th stage attenuation unit meets the phase condition and the amplitude condition but does not meet the area condition, the number of phase correction units is reduced, and the values and layout of the calibration capacitors and switching transistors in the phase correction units are adjusted until the phase condition, amplitude condition, and area condition are met at the same time, and the n-th stage attenuation unit is corrected; If the simulation or test results show that the n-th stage attenuation unit meets the area condition and the amplitude condition but does not meet the phase condition, then increase the number of phase correction units and adjust the values and layout of the calibration capacitor and the switch transistor in the phase correction unit until the phase condition, amplitude condition and area condition are met at the same time, and the n-th stage attenuation unit is corrected; If the simulation or test results show that the n-th stage attenuation unit meets the area condition and the phase condition but does not meet the amplitude condition, then adjust the values of the switching transistor, the current limiting resistor, and the calibration capacitor in the attenuation unit of this stage until the phase condition, the amplitude condition, and the area condition are met at the same time. The calibration of the n-th stage attenuation unit is completed. If the simulation or test results show that the n-th stage attenuation unit meets the area condition but does not meet the amplitude condition and the phase condition, then adjust the values of the switching transistor, current limiting resistor and calibration capacitor in the attenuation unit of this stage, and adjust the values of the capacitor and transistor in the phase correction unit at the same time, until the phase condition, amplitude condition and area condition are met at the same time, and the calibration of the n-th stage attenuation unit is completed; If the simulation or test results show that the n-th stage attenuation unit meets the amplitude condition but does not meet the area condition and the phase condition, the number of phase correction units is reduced, and the values of the calibration capacitor and the switching transistor in the phase correction unit are adjusted until the phase condition, amplitude condition and area condition are met at the same time, and the n-th stage attenuation unit is corrected; If the simulation or test results show that the n-th stage attenuation unit meets the phase condition but does not meet the area condition and the amplitude condition, it is necessary to reduce the number of phase correction units, adjust the values of the calibration capacitor and the switching transistor in the phase correction unit, and adjust the values of the transistor, resistor, and capacitor in the attenuation unit of this stage until the phase condition, amplitude condition, and area condition are met at the same time, and the correction of the n-th stage attenuation unit is completed; If the simulation or test results show that the phase condition, area condition and amplitude condition of the n-th stage attenuation unit are not met, the number of phase correction units is reduced, and the values of the capacitors and transistors in the phase correction units are adjusted, and the values of the transistors, resistors and capacitors in the attenuation units of this stage are adjusted until the phase condition, amplitude condition and area condition are met at the same time, and the correction of the n-th stage attenuation unit is completed.

Images