Method, device and system for cleaning supply channel for wafer processing

Abstract

The invention discloses a supply channel cleaning method, device and system for wafer processing, and the method comprises the steps: a first cleaning step: after a supply channel is filled with chemical liquid, the chemical liquid is introduced into the supply channel in a liquid dropping manner, so that the supply channel is dynamically soaked, and pollutants are dissolved; a second cleaning step: after the first cleaning step is executed for a period of time, cleaning liquid is introduced into the supply channel for flushing; and the first cleaning step and the second cleaning step are repeated according to actual requirements.

Description

[0001] This application is a divisional application of the invention patent application with application number 202210677960.6 filed on June 16, 2022. Technical Field

[0002] The present invention relates to the technical field of semiconductor wafer processing, and in particular to a supply channel cleaning method, device and system for wafer processing. Background Art

[0003] In the fabrication of very large-scale integrated circuits (GLSIs), chemical mechanical planarization (CMP) is currently the only technology capable of achieving both local and global planarization of wafer surfaces. After the CMP operation, a large amount of contaminants such as abrasive particles and wafer debris remain on the wafer surface. As feature sizes continue to decrease, the requirements for the size and quantity of residual contaminants are becoming increasingly stringent. Post-CMP wafer processing is a crucial step in removing these contaminants, and is increasingly becoming a critical process for device reliability.

[0004] like Figure 1 As shown, patent document 201310023763.3 discloses a device for wafer processing. The device includes first and second cleaning liquid supply units, each of which includes a cleaning liquid delivery pipe mounted on a frame and multiple nozzles spaced evenly apart on the cleaning liquid delivery pipe for supplying cleaning liquid to the surface of the wafer. When such a processing device is installed in a chip factory, contaminants such as particles (dust) must be removed from the pipes and nozzles before normal operation. Furthermore, debris attached to the pipes and other parts during the use of the processing device must be removed at appropriate times. Therefore, cleaning the pipes and other parts of the processing device is necessary to improve the cleanliness of key components such as the pipes and flowmeters within the fluid manifold box and reduce the impact of the cleaning unit itself. This is also an important way to ensure the stability of the cleaning effect and batch consistency.

[0005] In the prior art, flushing pipes requires a large amount of liquid medicine and takes a long time, sometimes up to six days, which results in a large amount of waste and increases production costs. Therefore, controlling the time and cost of cleaning is an urgent problem to be solved. Summary of the Invention

[0006] Embodiments of the present invention provide a method, device, and system for cleaning a supply channel for wafer processing, aiming to solve at least one of the technical problems existing in the prior art.

[0007] A first aspect of an embodiment of the present invention provides a method for cleaning a supply channel for wafer processing, comprising:

[0008] A first cleaning step, after the supply channel is filled with chemical liquid, the chemical liquid is passed into the supply channel in a dripping manner to achieve dynamic immersion of the supply channel, thereby dissolving contaminants;

[0009] a second cleaning step, after the first cleaning step is performed for a period of time, introducing a cleaning liquid into the supply channel for flushing;

[0010] Repeat the first cleaning step and the second cleaning step according to actual needs.

[0011] In one embodiment, the cleaning of a single channel includes:

[0012] A pre-flushing step, using a high-pressure cleaning fluid to quickly flush the single-channel; and

[0013] The first cleaning step and the second cleaning step as claimed in claim 1.

[0014] In one embodiment, for the cleaning of a complex channel with multiple branches, the dripping frequency of the chemical liquid and / or the dynamic immersion time are adjusted in the first cleaning step according to the complexity of the channel, and the flow rate of the cleaning liquid and / or the flushing time are adjusted in the second cleaning step.

[0015] In one embodiment, the cleaning method has at least two different mode selection functions, specifically including:

[0016] According to the operation instruction, the corresponding cleaning mode is called from at least two pre-set cleaning modes and the cleaning steps are executed; wherein the cleaning mode includes cleaning steps set according to the complexity of the supply channel.

[0017] In one embodiment, the chemical liquid is SC1 chemical liquid, the dripping frequency of the chemical liquid is 50 to 130 drops per minute, and the dynamic immersion time of the chemical liquid is 1 to 10 hours.

[0018] In one embodiment, the cleaning liquid is DIW deionized water, the flow rate is 0.4-0.6 MPa, and the flushing time is 6-14 hours.

[0019] In one embodiment, the supply channel is made of plastic or stainless steel.

[0020] In one embodiment, the cleaning method further includes a detection step, in which the supply channel is subjected to a particle detection. If the detection result is unqualified, the first cleaning step and / or the second cleaning step is re-executed.

[0021] In one embodiment, the cleaning method further includes a drying step. When the particle detection result of the supply channel is qualified, the supply channel is purged with PN2 high-purity nitrogen gas to dry it, and then the supply channel is sealed.

[0022] A second aspect of an embodiment of the present invention provides a cleaning device for a supply channel for wafer processing, comprising:

[0023] A liquid supply module, used for providing the chemical liquid and cleaning liquid;

[0024] A flow rate regulating module, which uses a valve to adjust the flow rate of the chemical liquid and the cleaning liquid;

[0025] The control module is used to implement the supply channel cleaning method as described above.

[0026] In one embodiment, the control module includes a mode selection unit for receiving an operation instruction from a user and sending corresponding cleaning mode information selected by the user to the control module.

[0027] A third aspect of an embodiment of the present invention provides a wafer processing system, comprising:

[0028] multiple processing units;

[0029] A supply channel is connected to the processing unit and is used to provide a cleaning fluid to the processing unit; wherein the supply channel is connected to the cleaning device as described above for cleaning.

[0030] The beneficial effects of the embodiments of the present invention include: introducing the chemical liquid into the supply channel in a dripping manner, dynamically soaking the supply channel to dissolve pollutants, thereby achieving a better cleaning effect in a short time and with low flow consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The advantages of the present invention will become clearer and easier to understand through the detailed description made in conjunction with the following drawings, but these drawings are only exemplary and do not limit the scope of protection of the present invention, among which:

[0032] Figure 1 A device for wafer processing in the prior art is shown;

[0033] Figure 2 A wafer processing system provided by an embodiment of the present invention is shown;

[0034] Figure 3 FIG2 shows a wafer processing system provided by an embodiment of the present invention;

[0035] Figure 4 A cleaning method according to an embodiment of the present invention is shown;

[0036] Figure 5 FIG. 4 shows a complex channel provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0037] The technical solutions of the present invention are described in detail below in conjunction with specific embodiments and their accompanying drawings. The embodiments described herein are specific embodiments of the present invention and are used to illustrate the concept of the present invention; these descriptions are explanatory and exemplary and should not be understood as limiting the embodiments of the present invention and the scope of protection of the present invention. It should be noted that, in the absence of conflict, the embodiments in this application and the features in the embodiments can be combined with each other. In addition to the embodiments described herein, those skilled in the art can also adopt other obvious technical solutions based on the contents disclosed in the claims of this application and its specification, including technical solutions that adopt any obvious replacements and modifications to the embodiments described herein. It should be understood that, unless otherwise specified, for ease of understanding, the following descriptions of the specific embodiments of the present invention are all based on the description of the relevant equipment, devices, components, etc. in their original static natural state without external control signals and driving forces.

[0038] In addition, it should be noted that the terms used in this application to indicate directions, such as front, back, up, down, left, right, top, bottom, front, back, horizontal, vertical, etc., are only for the convenience of description to help understand the relative position or direction, and are not intended to limit the orientation of any device or structure.

[0039] In order to illustrate the technical solution of the present invention, the following description will be made with reference to the accompanying drawings and in combination with embodiments.

[0040] In this application, chemical mechanical polishing is also referred to as chemical mechanical planarization, and wafer is also referred to as chip, silicon chip, base plate or substrate, which have the same meaning and actual function.

[0041] like Figure 2As shown, a wafer processing system 100 provided by an embodiment of the present invention includes a front-end module 110, a transmission module 120 and a processing module 130, wherein the processing module 130 includes two sets of chemical mechanical polishing units 131 and a plurality of processing units. The plurality of processing units include a first cleaning unit 132, a second cleaning unit 133, a third cleaning unit 134 and a drying unit 135. The cleaning units 132-134 can use a variety of methods such as immersion, megasonics, brushing and / or spraying to achieve wafer cleaning, and the drying unit 135 can use a variety of methods such as rotation and / or lifting to achieve wafer drying. It is understandable that the number of processing units can also be other numbers and is not limited to Figure 2 shown.

[0042] like Figure 3 As shown, another embodiment of the present invention provides a wafer processing system 200, comprising:

[0043] multiple processing units 132-135;

[0044] The supply channel 14 is connected to the processing unit and is used to provide cleaning fluid to the processing unit.

[0045] In one embodiment, the supply channel 14 may include a fluid pipeline connected to the outside of the processing units 132-135, and may also include a spray bar, a nozzle and / or a connecting pipe for circulating fluid inside the processing units 132-135. The material of the supply channel 14 is PFA plastic or stainless steel.

[0046] like Figure 3 As shown, another embodiment of the present invention provides a cleaning device 10 for a supply channel 14 for wafer processing, comprising:

[0047] A liquid supply module 11, for providing the chemical liquid and cleaning liquid;

[0048] A flow rate regulating module 12, which uses a valve to regulate the flow rate of the chemical liquid and the cleaning liquid;

[0049] The control module 13 is used to control the operation mode of each module to achieve cleaning of the supply channel 14, and can be a host computer.

[0050] The cleaning device 10 is connected to the supply channel 14 to clean the supply channel 14. The total liquid inlet end of the supply channel 14 to be cleaned is connected to the cleaning device 10, and the liquid discharge end of the supply channel 14 is connected to the corresponding liquid discharge pipe.

[0051] like Figure 3Figure 1 shows the piping structure of a cleaning solution according to one embodiment of the present invention. The cleaning fluid is deionized water (DIW); MV1, MV2, MV3, and MV4 are manual regulating valves; and E2 is a DIW filter, which further filters the DIW water entering the channel or module to be cleaned. The chemical liquid is SC1, a mixture of ammonia and hydrogen peroxide at a certain concentration ratio. The SC1 filter filters the chemical liquid. Compressed air powers the chemical liquid supply pump P1. The main liquid inlet of the pipeline is connected to the channel or module to be cleaned, ensuring alternating supply of chemical liquid and cleaning fluid.

[0052] Reference Figure 3 The specific work process includes:

[0053] 1) Open valves MV1 and MV3 to mix DIW deionized water and SC1 chemical solution.

[0054] 2) After the chemical liquid is mixed, close valves MV1 and MV3, keep MV2 in a normally open state, open the valve of the chemical liquid supply pump P1, and supply the chemical liquid to the supply channel 14 that needs to be cleaned.

[0055] 3) After the chemical liquid has been introduced for a certain period of time, close the valve of the chemical liquid supply pump P1 and valve MV2, open valves MV1 and MV3, and continue to flush the supply channel 14 that needs to be cleaned with DIW deionized water.

[0056] 4) After rinsing with DIW deionized water for a certain period of time, the supply channel 14 to be cleaned is tested for particles. If the test result is qualified, the supply channel 14 is purged clean with high-purity nitrogen gas; if the test result is unqualified, the alternating cleaning process of chemical liquid and DIW deionized water needs to be repeated.

[0057] like Figure 4 As shown, another embodiment of the present invention provides a method for cleaning a supply channel 14 for wafer processing, comprising:

[0058] (1) After starting, the system enters the mode selection step, receives the user's operation instruction, and according to the operation instruction, calls the corresponding cleaning mode from at least two pre-set cleaning modes.

[0059] (2) Perform a pre-rinsing step according to the selected cleaning mode, and quickly rinse the supply channel 14 using high-pressure cleaning fluid.

[0060] (3) After the pre-rinsing step is completed, the first cleaning step is performed, or the first cleaning step is performed according to the selected cleaning mode. After the supply channel 14 is filled with the chemical liquid, the chemical liquid is dripped into the supply channel 14 to achieve dynamic immersion of the supply channel 14, thereby dissolving the contaminants.

[0061] (4) After the first cleaning step is completed, the second cleaning step is performed, and the cleaning liquid is passed into the supply channel 14 for flushing.

[0062] (5) Repeat the first cleaning step and the second cleaning step n times according to the selected cleaning mode.

[0063] (6) After repeating n times, the detection step is executed to perform particle detection on the supply channel 14. If the detection result is unqualified, the first cleaning step and / or the second cleaning step is re-executed; if the detection result is qualified, the cleaning of the supply channel 14 is terminated.

[0064] (7) When only the draining step is performed according to the selected cleaning mode, the liquid in the supply passage 14 is drained.

[0065] The following is based on Figure 4 Several embodiments of the cleaning method are shown.

[0066] Example 1

[0067] For the cleaning of a single channel, it specifically includes:

[0068] (1) Pre-flushing step: use high-pressure water to quickly flush the single-channel.

[0069] (2) In the first cleaning step, liquid is supplied to the single channel through the liquid supply module 11, so that the single channel is filled with SC1 solution. The SC1 solution is a mixed solution of hydrogen peroxide: ammonia water: DIW deionized water with a mixing ratio of 1:1:20. Before supplying the liquid, the terminal valve of the single channel needs to be closed; after the single channel is filled with SC1 solution, the terminal valve is opened, and the control module 13 drips SC1 solution into the single channel at a set dripping frequency, for example, 110 to 130 drops / minute, to achieve dynamic immersion of the single channel. This immersion process can last for 1 to 4 hours, thereby dissolving the pollutants.

[0070] (3) Second cleaning step: After the first cleaning step, DIW deionized water with a hydraulic pressure of 0.4 MPa was introduced into the single-channel to flush the channel for 6 hours.

[0071] (4) Detection step: perform particle detection on the single channel. If the detection result is unqualified, re-execute the above first cleaning step and / or second cleaning step.

[0072] (5) Drying step: After the particle detection results of the single channel are qualified, PN2 high-purity nitrogen is used to purge the single channel for drying, and then the pipeline is sealed.

[0073] The parameters for single-channel cleaning include:

[0074] Pipe material: PFA plastic.

[0075] Pipeline length: between 100mm and 7000mm.

[0076] Tube diameter: 1 / 4 inch, 3 / 8 inch, 1 / 2 inch or 3 / 4 inch, determined by the size of the device interface.

[0077] Pipeline complexity: between 0 and 5. It should be noted that the pipeline complexity here refers to the number of bends in the pipeline under different pipe diameters. For example, if two devices need to be connected by a pipeline, and the path involves bends, the number of bends may be many or few.

[0078] Pipe bending angle: 90 degrees to 135 degrees.

[0079] Operating workshop ambient temperature: 20℃~30℃, preferably 22℃~25℃.

[0080] Operating workshop ambient humidity: 30% RH ~ 70% RH, preferably 45% RH ~ 55% RH.

[0081] The following examples are based on Figure 5 The examples shown are specific cleaning process examples with different numbers of bends in the supply channel piping.

[0082] like Figure 5 As shown, for the cleaning of complex channels with a large number of pipeline bends (>5), another embodiment of the present invention provides a pipeline schematic diagram of a supply channel 14 for wafer processing, including pipeline supply channels with various numbers of bends.

[0083] Example 2

[0084] For cleaning of complex channels with 6 to 10 bends in the pipeline, Figure 5 For example, the chemical liquid channel 1 that provides cleaning fluid for the wafer processing unit 134A is used. Figure 5 The actual number of bends in the chemical liquid 1 channel is 8. The cleaning process specifically includes:

[0085] (1) In the first cleaning step, liquid is supplied to the chemical liquid 1 channel through the liquid supply module, so that the chemical liquid 1 channel is filled with SC1 solution. The SC1 solution is a mixed solution of hydrogen peroxide: ammonia water: DIW deionized water with a mixing ratio of 1:1:20. Before supplying the liquid, the terminal valve of the chemical liquid 1 channel needs to be closed; after the chemical liquid 1 channel is filled with SC1 solution, the terminal valve is opened, and the control module drips SC1 solution into the chemical liquid 1 channel according to the set dripping frequency, for example, 80 to 100 drops / minute, to achieve dynamic immersion of the chemical liquid 1 channel. This immersion process can last for 5 to 8 hours, thereby dissolving the pollutants.

[0086] (2) Second cleaning step: After the first cleaning step is completed, DIW deionized water with a hydraulic pressure of 0.5 MPa is introduced into the chemical liquid 1 channel to rinse the channel for 12 hours.

[0087] (3) For complex pipelines with the number of bends (between 6 and 10), the first cleaning step and the second cleaning step need to be repeated n times (1 < n < 4).

[0088] (4) Detection step: The chemical liquid 1 channel is subjected to particle detection. If the detection result is unqualified, the first cleaning step and the second cleaning step need to be repeated n times (1 < n < 4).

[0089] (5) Drying step: After the particle detection result of the chemical liquid 1 channel is qualified, PN2 high-purity nitrogen is used to purge the chemical liquid 1 channel for drying, and then the pipeline is blocked.

[0090] Among them, the parameters for cleaning complex channels with the number of pipeline bends (between 6 and 10) specifically include:

[0091] Pipeline material: PFA plastic.

[0092] Pipeline length: between 7000 mm and 20000 mm.

[0093] Pipe diameter: 1 / 4 inch, 3 / 8 inch, 1 / 2 inch or 3 / 4 inch, determined by the size of the device interface used.

[0094] Pipeline bend angle: 90 degrees to 135 degrees.

[0095] Operating workshop ambient temperature: 20°C to 30°C, preferably 22°C to 25°C.

[0096] Operating workshop ambient humidity: 30%RH to 70%RH, preferably 45%RH to 55%RH.

[0097] Example 3

[0098] For the cleaning of complex channels with the number of pipeline bends (between 11 and 15), taking Figure 5 the plant utility water channel that provides cleaning fluid for the wafer processing unit 134A in Figure 5 as an example, the actual number of bends of the plant utility water channel in

[0099] (1) First cleaning step: Supply liquid to the facility water channel through the liquid supply module to fill the facility water channel with SC1 solution. The SC1 solution is a mixed solution of hydrogen peroxide: ammonia water: DIW deionized water with a mixing ratio of 1:1:20. Before liquid supply, the terminal valve of the facility water channel needs to be closed. After the facility water channel is filled with SC1 solution, open the terminal valve, and the control module drops the SC1 solution into the facility water channel at a set dripping frequency, such as 50 - 70 drops per minute, to achieve dynamic soaking of the facility water channel. This soaking process can last for 7 - 10 hours to dissolve pollutants.

[0100] (2) Second cleaning step: After the first cleaning step is completed, introduce DIW deionized water with a hydraulic pressure of 0.6 MPa into the facility water channel to rinse the channel for 14 hours.

[0101] (3) For complex pipelines with the number of bends (between 11 and 15), the first cleaning step and the second cleaning step need to be repeated n times (2 < n < 5).

[0102] (4) Detection step: Conduct particle detection on the facility water channel. If the detection result is unqualified, continue to repeat the first cleaning step and the second cleaning step n times (2 < n < 5).

[0103] (5) Drying step: After the particle detection result of the facility water channel is qualified, use PN2 high-purity nitrogen to purge the facility water channel for drying, and then block the pipeline.

[0104] Among them, the parameters for cleaning complex channels with the number of pipeline bends (between 11 and 15) specifically include:

[0105] Pipeline material: PFA plastic.

[0106] Pipeline length: between 20000 mm and 50000 mm.

[0107] Pipe diameter: 1 / 4 inch, 3 / 8 inch, 1 / 2 inch or 3 / 4 inch, determined by the size of the device interface used.

[0108] Pipeline bend angle: 90 degrees - 135 degrees.

[0109] Operating workshop ambient temperature: 20°C - 30°C, preferably 22°C - 25°C.

[0110] Operating workshop ambient humidity: 30%RH - 70%RH, preferably 45%RH - 55%RH.

[0111] Furthermore, according to the complexity of the supply channel, the dripping frequency of the chemical liquid and / or the dynamic soaking time in the first cleaning step, as well as the flow rate of the cleaning liquid and / or the flushing time in the second cleaning step can be further optimized.

[0112] In the above embodiments 1 to 3, under the premise of a certain liquid supply pressure, the flow rate of the chemical liquid or DIW deionized water in a complex pipeline with a long length or many bends is slow, and there are more pollutants inside the complex pipeline, making it difficult to clean the pipeline, requiring a large amount of chemical liquid for cleaning, and taking a long time; while the flow rate of the chemical liquid or DIW deionized water in a simple pipeline with a short length or fewer bends is fast, making it less difficult to clean the pipeline, and requiring a shorter time. Therefore, according to the complexity of the pipeline to be cleaned or the pipeline inside the module, the control module is used to adjust the dripping frequency of the chemical liquid into the supply channel to improve the cleaning efficiency: for complex pipelines with a long length or many bends, the dripping frequency of the chemical liquid is appropriately reduced, which is conducive to the dissolution of pollutants inside the complex pipeline by the chemical liquid; for simple pipelines with a short length or fewer bends, the dripping frequency of the chemical liquid is appropriately increased to take away some of the dissolved products while ensuring that the pollutants can be dissolved.

[0113] Example 4

[0114] Furthermore, the cleaning method has at least two different mode selection functions, specifically including:

[0115] According to the operation instruction, the corresponding cleaning mode is called from at least two pre-set cleaning modes; wherein the cleaning mode is a cleaning step set according to the complexity of the supply channel.

[0116] Based on the mode selection function described in Example 4, Figure 3 The control module further includes a mode selection unit for receiving an operation instruction from a user and sending corresponding cleaning mode information selected by the user to the control module.

[0117] Specifically, the cleaning mode may include:

[0118] Strong wash mode: cleaning is performed according to the process steps of the above embodiment 2 or embodiment 3;

[0119] The quick wash module performs cleaning according to the process steps of the above embodiment 1;

[0120] In single emptying mode, the liquid in the channel is drained and the above drying steps are performed.

[0121] Example 5

[0122] Furthermore, the cleaning method further includes a detection step, in which the supply channel 14 is detected for particles. If the detection result is unqualified, the first cleaning step and / or the second cleaning step is re-executed.

[0123] Tables 1 and 2 below compare the test results before cleaning and the cleaning results after adopting the solution of the present application. The specific parameters are the number of particles of different particle sizes in the supply channel 14, as shown below.

[0124] Table 1 Number of particles of different sizes in each pipeline before cleaning

[0125]

[0126] Table 2 Number of particles of different sizes in each pipeline after cleaning

[0127]

[0128] In summary, the embodiments of the present invention can achieve efficient cleaning of the supply channel, the safety risk of the cleaning process is low, and the cleanliness of the channel after cleaning is very high, which can meet the needs of complex process wafer processing.

[0129] The drawings in this specification are schematic diagrams that assist in illustrating the concepts of the present invention and schematically illustrate the shapes of the various components and their interrelationships. It should be understood that in order to clearly illustrate the structures of the various components of the embodiments of the present invention, the drawings are not drawn to the same scale, and the same reference numerals are used to represent the same parts in the drawings.

[0130] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples" means that a specific feature, structure, material, or characteristic described in conjunction with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, illustrative uses of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0131] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to the embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the claims and their equivalents.

Claims

1. A method for cleaning micron and submicron particles from a supply channel for wafer processing, characterized in that: include: a mode selection step, selecting a cleaning mode according to the complexity of the channel, wherein the cleaning mode includes a quick wash mode and a strong wash mode; Cleaning steps: According to the selected cleaning mode, perform the following cleaning steps: A first cleaning step, after the supply channel is filled with chemical liquid, the chemical liquid is passed into the supply channel in a dripping manner to achieve dynamic immersion of the supply channel, thereby dissolving contaminants; a second cleaning step, after the first cleaning step is performed for a period of time, introducing a cleaning liquid into the supply channel for flushing; The dripping frequency of the chemical liquid and / or the dynamic soaking time are different in the quick wash mode and the strong wash mode, and the flow rate of the cleaning liquid and / or the flushing time are different in the quick wash mode and the strong wash mode.

2. The cleaning method according to claim 1, wherein The cleaning mode is selected according to the complexity of the channel, including: When the number of bends in the supply channel is less than 6, selecting the quick wash mode; When the number of bends in the supply channel is greater than or equal to 6, the strong wash mode is selected.

3. The cleaning method according to claim 1, wherein In the quick wash mode, before the first washing step, the method further includes: In the pre-flushing step, the supply channel is quickly flushed using a high-pressure cleaning fluid.

4. The cleaning method according to claim 1, wherein In the strong wash mode, it also includes: Repeat the first cleaning step and the second cleaning step according to actual needs.

5. The cleaning method according to any one of claims 1 to 4, wherein: The chemical liquid is SC1 chemical liquid; In the quick wash mode, the dripping frequency of the chemical liquid is 110 to 130 drops per minute, and the dynamic soaking time is 1 to 4 hours; In the strong washing mode, the dripping frequency of the chemical liquid is 50 to 110 drops per minute, and the dynamic soaking time is 5 to 10 hours.

6. The cleaning method according to claim 5, wherein The cleaning fluid is DIW deionized water; In the quick wash mode, the flow rate of the cleaning liquid is 0.4 MPa and the flushing time is 6 hours; In the strong washing mode, the flow rate of the washing liquid is 0.5 to 0.6 MPa, and the washing time is 12 to 14 hours.

7. The cleaning method according to claim 1, wherein The material of the supply channel is plastic or stainless steel.

8. The cleaning method according to claim 1, wherein The method further includes a detection step of performing particle detection on the supply channel. If the detection result is unqualified, the first cleaning step and / or the second cleaning step is re-executed.

9. The cleaning method according to claim 8, wherein The method further includes a drying step, wherein when the particle detection result of the supply channel is qualified, the supply channel is purged with PN2 high-purity nitrogen gas to dry the supply channel, and then the supply channel is sealed.

10. A cleaning device for a supply channel for wafer processing, characterized in that: include: A liquid supply module, used for providing the chemical liquid and cleaning liquid; A flow rate regulating module, which uses a valve to adjust the flow rate of the chemical liquid and the cleaning liquid; A control module is used to implement the supply channel cleaning method according to any one of claims 1 to 9.

11. The cleaning device according to claim 10, wherein: The control module includes a mode selection unit for receiving an operation instruction from a user and sending corresponding cleaning mode information selected by the user to the control module.

12. A wafer processing system, characterized in that: include: multiple processing units; A supply channel is connected to the processing unit and is used to provide cleaning fluid to the processing unit; wherein the supply channel is connected to the cleaning device according to claim 10 or 11 for cleaning.

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