Millimeter wave frequency band ultra-wideband packaged antenna unit and array

Abstract

The present invention relates to a millimeter-wave frequency band ultra-wideband packaged antenna unit and array, belonging to the field of antennas. The antenna unit comprises, from bottom to top, a feeder layer, a first dielectric substrate layer, a ground plane, a first adhesive layer, a second dielectric substrate layer, a first sub-patch layer, a first metal grid, a first parasitic patch layer, a second adhesive layer, a third dielectric substrate layer, a second sub-patch layer, a second metal grid, and a second parasitic patch layer. The present invention adopts a multi-layer stacked patch antenna design structure, stacking two patches to achieve ultra-wideband performance, and adopting an H-shaped slot for feeding, which is beneficial to the realization of ultra-wideband performance. The cut-angle design can widen the bandwidth and improve impedance matching without increasing the complexity of the structure. A pair of parasitic patches are added around the stacked patches to solve the problem of directional pattern distortion caused by occlusion between the patches in the stacked structure.

Description

Technical Field

[0001] The present invention relates to the field of antennas, and in particular to a millimeter wave frequency band ultra-wideband packaged antenna unit and array. Background Art

[0002] Millimeter-wave technology has attracted significant attention for its vast spectrum resources, which can help alleviate spectrum constraints in low-frequency microwave bands and significantly increase data transmission speeds. Antennas, as core components of wireless communication systems, play a crucial role in fields such as mobile communications, automotive radar, and satellite communications. The 5G millimeter-wave band offers even richer spectrum resources and a wider range of applications. Despite this, millimeter-wave antennas still face challenges in terms of propagation loss, size limitations, tolerances, and manufacturing costs. In recent years, microstrip patch antennas have gained widespread application in modern wireless communications due to their cost-effectiveness, low-profile design, and integration with planar circuits. However, microstrip patch antennas in the millimeter-wave band face limitations such as narrow bandwidth and significant conductor and dielectric losses, which have hindered their further development. Therefore, achieving wide bandwidth and high gain are two key challenges in the design of 5G millimeter-wave microstrip patch antennas. With the rapid development of wireless communication technology, modern communication systems are increasingly demanding data transmission speed, capacity, and response time. The millimeter wave band offers multiple usable spectrum ranges, including N258 (24.25-27.5 GHz), N261 (27.5-28.35 GHz), N257 (26.5-29.5 GHz), N259 (39.5-43.5 GHz), and N260 (37-40 GHz). The WiFi 802.11aj standard also covers the 42.3 to 48.4 GHz band. To enhance system compatibility, communication system designs often require coverage of multiple frequency bands. Therefore, developing an ultra-wideband millimeter wave antenna capable of broad frequency coverage is crucial to meeting modern communication needs.

[0003] The existing IEEE Open Journal of Antennas and Propagation introduces a Ka-band dual-polarization low-profile magnetoelectric dipole antenna with a wide operating bandwidth. The antenna can cover the entire Ka-band and has an operating frequency of 26-42 GHz. The designed and manufactured 1 × 4 antenna array has a gain of 12.06 dBi and a stable radiation pattern. However, the operating bandwidth of the antenna cannot fully cover the 5G communication frequency band. And the IEEE Antennas and Wireless Propagation Letters, a magazine of the IEEE, introduces a low-profile millimeter-wave broadband metasurface antenna. The dimensions of the antenna are 1.03 × 1.03 × 0.023 λ0 3 , achieving a -10dB impedance bandwidth of 16% (26.1 GHz–30.7 GHz). Peak gain reached 10.1 dBi, with a 3dB gain bandwidth of 22% (24.4 GHz–30.5 GHz). However, the antenna's bandwidth remains relatively narrow. The IEEE Antennas and Wireless Propagation Letters also introduced a novel ultra-wideband millimeter-wave slotted circular patch antenna and array. Each circular patch antenna element is loaded with three pairs of folded microstrips to increase bandwidth and fed by a substrate-integrated waveguide via a coupling slot. This enables the realization of antenna elements with ultra-wideband characteristics. Subsequently, an 8×8 array antenna prototype was designed and fabricated. The measured impedance bandwidth covers an ultra-wideband range of 22.9–40.7 GHz, with a relative bandwidth of 56% and an average radiation efficiency of 73.8%. However, this antenna does not fully cover the 5G communication frequency band, FR2. The Chinese invention patent application number CN202410810087.2 discloses a "millimeter-wave ultra-wideband beam magnetoelectric dipole antenna unit and antenna." The antenna unit includes a radiator and a feed module. Its disclosed impedance bandwidth is 24.06-42.61 GHz. However, the antenna unit uses a magnetoelectric dipole antenna, which has a complex overall structure and is not easily integrated into chips. Furthermore, the antenna bandwidth does not fully cover the 5G FR2 communication band. Therefore, addressing the issues of limited bandwidth and complex structures in existing broadband antennas is a pressing issue. Summary of the Invention

[0004] The purpose of the present invention is to overcome the shortcomings of the prior art and provide a millimeter wave frequency band ultra-wideband packaged antenna unit and array to solve the deficiencies of the prior art.

[0005] The object of the present invention is achieved by the following technical solution: a millimeter wave frequency band ultra-wideband packaged antenna unit, the antenna unit comprising, from bottom to top, a feeder layer, a first dielectric substrate layer, a ground plate, a first adhesive layer, a second dielectric substrate layer, a first sub-patch layer, a first metal grid, a first parasitic patch layer, a second adhesive layer, a third dielectric substrate layer, a second sub-patch layer, a second metal grid, and a second parasitic patch layer;

[0006] An H-shaped slot structure is provided on the first dielectric substrate layer to expand the antenna bandwidth; a first metal through-hole passes through the first dielectric substrate layer, the ground plate, the first adhesive layer, the second dielectric substrate layer, the first metal grid, the second adhesive layer, the third dielectric substrate layer, and the second metal grid; a first sub-patch layer, a first metal grid, and a first parasitic patch layer are all provided on the second dielectric substrate layer, and the first sub-patch layer and the first parasitic patch layer are provided inside the first metal grid, and the first sub-patch layer generates a resonance point at 38 GHz; a second sub-patch layer, a second metal grid, and a second parasitic patch layer are all located on the third dielectric substrate layer, and the second sub-patch layer and the second parasitic patch layer are provided inside the second metal grid, and the second sub-patch layer generates a second resonance point at 30 GHz.

[0007] An isosceles triangle is cut off at the four corners of the first sub-patch layer to improve the antenna impedance matching, and four first rectangular gaps are opened at the edge of the first sub-patch layer to reduce the out-of-phase current distribution at the edge, thereby improving the antenna bandwidth and sidelobe level.

[0008] An isosceles triangle is cut off at the four corners of the second sub-patch layer to improve the antenna impedance matching, and two second rectangular gaps are opened at the edge of the second sub-patch layer to reduce the out-of-phase current distribution at the edge, thereby improving the antenna bandwidth and sidelobe level.

[0009] The two first parasitic patch layers are respectively arranged on both sides of the first sub-patch layer, and the two second parasitic patch layers are respectively arranged on both sides of the second sub-patch layer. The first parasitic patch layer and the second parasitic patch layer work together to repair the directivity pattern at high frequencies.

[0010] A millimeter-wave frequency band ultra-wideband packaged antenna array comprises a plurality of antenna units arranged in an array. The antenna array is fed by a microstrip line feeding network, and the microstrip line feeding network is arranged below a first dielectric substrate layer.

[0011] The microstrip line feeding network includes a two-stage symmetrical one-to-two equally-divided feeding network. Each stage of the one-to-two equally-divided feeding network is composed of a multi-section impedance transformation microstrip line. The corners of the microstrip line are cut to achieve better impedance matching between the microstrip lines.

[0012] A two-stage one-divide-two equally divided feeding network forms a one-divide-four feeding network, each branch feeding network includes a first microstrip line, a second microstrip line, a third microstrip line, a fourth microstrip line, a fifth microstrip line, a sixth microstrip line, a seventh microstrip line, an eighth microstrip line and a ninth microstrip line connected in sequence, and the ninth microstrip line is connected to an output port.

[0013] The first microstrip line, the fifth microstrip line and the ninth microstrip line are all microstrip lines with Z0 = 50Ω;

[0014] The second microstrip line and the sixth microstrip line are both linear gradient lines with Z0 = 50Ω ~ 91.7Ω;

[0015] The third microstrip line and the seventh microstrip line are both linear gradient lines with Z0 = 91.7Ω~70.7Ω;

[0016] The fourth microstrip line and the eighth microstrip line are both linear gradient lines with Z0 = 70.7Ω~54.5Ω.

[0017] The microstrip line feeding network is connected to the transition structure from the grounded coplanar waveguide to the microstrip line to jointly excite the antenna array;

[0018] A first through hole and a second through hole are provided on the transition structure for fixing the antenna feeding connector.

[0019] The transition structure includes a first external metal layer, a second external metal layer and a third external metal layer. The first external metal layer and the second external metal layer are arranged below the first dielectric substrate layer and are symmetrical to each other; the third external metal layer is arranged above the third dielectric substrate layer; the first external metal layer, the second external metal layer and the third external metal layer are connected to the ground plate of the inner layer of the antenna through a second metal through hole.

[0020] The present invention has the following advantages: a millimeter-wave band ultra-wideband packaged antenna unit and array, which adopts a multi-layer stacked patch antenna design structure, stacks two patches to achieve ultra-wideband performance, and adopts H-shaped slots for feeding, which is beneficial to the realization of ultra-wideband performance; the corner cutting design can widen the bandwidth and improve the impedance matching without increasing the complexity of the structure, and a pair of parasitic patches are added around the stacked patches to solve the problem of directional pattern distortion caused by occlusion between the patches in the stacked structure. By etching rectangular slots at the edges of the patches, the out-of-phase current distribution at the edges of the patches is reduced, thereby improving the antenna sidelobe level, while extending the surface current flow path and widening the antenna bandwidth. An ultra-wideband microstrip line feeding network composed of multiple impedance transformation lines is designed, and the design of gradient impedance transformation lines can maintain the good performance of the feeding network, so that the antenna array exhibits good broadband performance and radiation characteristics within the working frequency band. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 Schematic diagram of the exploded structure of the antenna unit of the present invention;

[0022] Figure 2 A schematic diagram of the structure provided for the second dielectric substrate layer;

[0023] Figure 3 A schematic diagram of the structure provided for the third dielectric substrate layer;

[0024] Figure 4 A schematic diagram of the structure of the first dielectric substrate layer;

[0025] Figure 5 Schematic diagram of the structure of the feeder layer under the first dielectric substrate layer;

[0026] Figure 6 is a top view of the antenna array of the present invention;

[0027] Figure 7 is a bottom view of the antenna array of the present invention;

[0028] Figure 8 Graph showing the return loss and gain simulation results of the antenna unit of the present invention;

[0029] Figure 9 Graph showing the return loss and gain simulation results of the antenna array of the present invention;

[0030] Figure 10 is the radiation pattern of the antenna unit at 28 GHz, 33 GHz, 38 GHz and 41 GHz;

[0031] Figure 11 Radiation patterns of the antenna array at 28 GHz, 33 GHz, 38 GHz, and 41 GHz;

[0032] In the figure: 1-feeder layer, 2-first dielectric substrate layer, 3-ground plate, 4-first adhesive layer, 5-second dielectric substrate layer, 6-first sub-patch layer, 7-first metal grid, 8-first parasitic patch layer, 9-second adhesive layer, 10-third dielectric substrate layer, 11-second sub-patch layer, 12-second metal grid, 13-second parasitic patch layer, 14-slit structure, 15-first metal through hole, 16-first rectangular slot, 17-second rectangular slot, 18-first micro- Strip line, 19-second microstrip line, 20-third microstrip line, 21-fourth microstrip line, 22-fifth microstrip line, 23-sixth microstrip line, 24-seventh microstrip line, 25-eighth microstrip line, 26-ninth microstrip line, 27-transition structure from grounded coplanar waveguide to microstrip line, 28-second metal through hole, 29-first external metal layer, 30-second external metal layer, 31-first through hole, 32-second through hole, 33-microstrip line feeding network, 34-third external metal layer. DETAILED DESCRIPTION

[0033] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application generally described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the detailed description of the embodiments of the present application provided below in conjunction with the drawings is not intended to limit the scope of protection of the present application for which protection is claimed, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application. The present invention is further described below in conjunction with the drawings.

[0034] like Figure 1 As shown, one embodiment of the present invention relates to a millimeter-wave band ultra-wideband packaged antenna unit, which adopts a multi-layer PCB stacking structure and operates in the frequency band range of 24.6GHz-45.2GHz. The antenna unit includes, arranged from bottom to top, a feeder layer 1, a first dielectric substrate layer 2, a ground plane 3, a first adhesive layer 4, a second dielectric substrate layer 5, a first sub-patch layer 6, a first metal grid 7, a first parasitic patch layer 8, a second adhesive layer 9, a third dielectric substrate layer 10, a second sub-patch layer 11, a second metal grid 12, a second parasitic patch layer 13, and a first metal via 15. The first dielectric substrate layer 2 is arranged on the feeder layer 1, the ground plane 3 is located on the first dielectric substrate layer 2, and is provided with an "H"-shaped gap structure 14. The second dielectric substrate layer 5 is disposed on the first adhesive layer 4. The first sub-patch layer 6, the first metal grid 7, and the first parasitic patch layer 8 are all disposed on the second dielectric substrate layer 5. The third dielectric substrate layer 10 is located on the second adhesive layer 9. The second sub-patch layer 11, the second metal grid 12, and the second parasitic patch layer 13 are all located on the third dielectric substrate layer 10. The first metal through hole 15 passes through the first dielectric substrate layer 2, the ground plate 3, the first adhesive layer 4, the second dielectric substrate layer 5, the first metal grid 7, the second adhesive layer 9, the third dielectric substrate layer 10, and the second metal grid 12.

[0035] Furthermore, the first sub-patch layer 6 generates a resonance point at about 38 GHz, and the addition of the second sub-patch layer 11 generates a second resonance point at about 30 GHz, which helps to achieve ultra-wideband performance. The dielectric substrates are all made of Rogers RO4003C with a dielectric constant of 3.55, and the adhesive layers are all made of Rogers RO4450B with a dielectric constant of 3.7. L and width W Both are 12mm, height h 1.4mm.

[0036] The first sub-patch layer 6, the first metal gate 7, the first parasitic patch layer 8 and the first metal through hole 15 passing through the second dielectric substrate layer 5 are arranged on the second dielectric substrate layer 5. The structure is as follows: Figure 2 As shown, the length l of the first sub-patch layer 6 p1 and width w p1 An isosceles triangle is cut out at the four corners of the first sub-patch layer 6, and the side length a of the isosceles triangle is 0.4 mm to improve the antenna impedance matching. Four first rectangular slots 16 are introduced at the edge of the first sub-patch layer 6, and the length of the first rectangular slot 16 is l a1 and width w a1 The length of the first parasitic patch layer 8 is 0.6 mm and 0.1 mm respectively, which can reduce the out-of-phase current distribution at the edge of the patch, thereby improving the antenna bandwidth and sidelobe level; the length of the first parasitic patch layer 8 is l t1 and width w t1 The first parasitic patch layer 8 and the second parasitic patch layer 13 work together to repair the directional pattern at high frequencies; the length l of the first metal grid 7 m1 and width w m1 The first metal grid 7 and the second metal grid 12 work together to improve the antenna gain.

[0037] The second sub-patch layer 11, the second metal gate 12, the second parasitic patch layer 13 and the first metal through hole 15 passing through the third dielectric substrate layer 10 are arranged on the third dielectric substrate layer 10. The structure is as follows: Figure 3 As shown, the length l of the second sub-patch layer 11 p2 and width w p2 An isosceles triangle is cut out at the four corners of the second sub-patch layer 11, and the side length b of the isosceles triangle is 0.8 mm to improve the antenna impedance matching. Two second rectangular slots 17 are introduced at the edge of the second sub-patch layer 11, and the length l of the second rectangular slot 17 is 0.8 mm. a2 and width w a2 0.8mm and 0.25mm respectively, which can reduce the out-of-phase current distribution at the edge of the patch, thereby improving the antenna bandwidth and sidelobe level; the length l of the second parasitic patch layer 13 t2 and width w t2 The length of the second metal grid 12 is 3.1mm and 0.4mm respectively. m2 and width w m2 The adjacent spacing d of the first metal through holes 15 is 6.2 mm and 5.2 mm respectively, which can improve the antenna gain. v 0.3mm.

[0038] The ground plate provided on the first dielectric substrate layer has a structure as follows Figure 4 As shown, the size l of the "H" shaped gap structure 14 s1 、l s2 and w s1 The diameters of the aperture-coupled multilayer microstrip antenna are 2.4 mm, 1.5 mm, and 0.25 mm, respectively. An improvement is made to the traditional aperture-coupled multilayer microstrip antenna. An "H"-shaped slot structure 14 is etched on the metal ground to replace the common rectangular slot, thereby expanding the bandwidth of the antenna unit. This allows the bottom microstrip line to couple energy to the stacked patch layer through the slot for feeding. The structure is shown in the figure below. Figure 5 As shown, the length of the microstrip line l f and width w f They are 7.4mm and 0.39mm respectively.

[0039] The lengths of the first sub-patch layer 6 and the second sub-patch layer 11 are and width Calculated according to the following formula:

[0040] (1),

[0041] (2),

[0042] (3),

[0043] (4),

[0044] (5),

[0045] Where c is the speed of light, is the relative dielectric constant, is the guided wavelength in the medium, is the effective dielectric constant, h is the thickness of the dielectric substrate, is the gap length of the radiation unit, f is the frequency, h is the height, W is the width.

[0046] like Figure 6 and Figure 7As shown, another real-time method of the present invention involves a millimeter-wave band ultra-wideband packaged antenna array. Based on the antenna unit of Example 1, the antenna array is arranged in a 1×4 manner. The antenna array is fed by a cascaded two-stage, one-to-two, equally divided ultra-wideband microstrip line feeding network 33. The microstrip line feeding network 33 is arranged below the first dielectric substrate layer 2. The microstrip line feeding network is composed of multiple sections of impedance-transforming microstrip lines. At the corners of the microstrip lines, a cut-angle design is performed to achieve better impedance matching between the microstrip lines. To facilitate testing, a transition structure 27 from a grounded coplanar waveguide to a microstrip line and the microstrip line feeding network 33 are designed to jointly excite the antenna array. To facilitate connection with a 2.4mm connector, a first through-hole 31 and a second through-hole 32 are provided for connector fixing. The one-to-four feeding network is an equally divided symmetrical structure.

[0047] Among them, the first microstrip line 18, the fifth microstrip line 22, and the ninth microstrip line 26 are microstrip lines with Z0 = 50Ω, the length h1 of the first microstrip line 18 is 10 mm, the two lengths h5 and h6 of the fifth microstrip line 22 are 2 mm and 1.2 mm respectively, the length h10 of the ninth microstrip line 26 is 5.7 mm, the line widths of the first microstrip line 18, the fifth microstrip line 22, and the ninth microstrip line 26 are all 0.39 mm, and Z0 is the impedance.

[0048] The second microstrip line 19 and the sixth microstrip line 23 are linear gradient lines with a resistance Z0 of 50Ω to 91.7Ω. The length h2 of the second microstrip line 19 is 1 mm. The length h7 of the sixth microstrip line 23 is 0.8 mm. The width of the second microstrip line 19 and the sixth microstrip line 23 are both 0.1 mm.

[0049] The third microstrip line 20 and the seventh microstrip line 24 are linear gradient lines with a resistance Z0 of 91.7Ω ​​to 70.7Ω. The length h3 of the third microstrip line 20 is 1.6 mm. The length h8 of the seventh microstrip line 24 is 1.1 mm. The width of each of the third and seventh microstrip lines 20 and 24 is 0.22 mm.

[0050] The fourth microstrip line 21 and the eighth microstrip line 25 are linear gradient lines with Z0 = 70.7Ω to 54.5Ω. The length h4 of the fourth microstrip line 21 is 0.6mm, and the length h4 of the eighth microstrip line 25 is 0.5mm. The line width of the fourth microstrip line 21 and the eighth microstrip line 25 are both 0.34mm.

[0051] Ports 2, 3, 4, and 5 are output ports, while port 1 is the signal input port. They use a 2.4mm connector, and the spacing between adjacent antenna elements is d = 5.64mm. The length L1 and width W1 of the antenna portion of the entire antenna array are 28.2mm and 14mm, respectively.

[0052] To facilitate connection with a 2.4mm connector, a grounded coplanar waveguide to microstrip transition structure 27 extends outward along the antenna array feed port. A first external metal layer 29 and a second external metal layer 30 are located below the first dielectric substrate layer 2 and are symmetrical to each other. Their length L2 and width W2 are 7 mm and 6 mm, respectively. A third external metal layer 34 is located above the third dielectric substrate layer 10. Its length L3 and width W3 are 15 mm and 8 mm, respectively. The first, second, and third external metal layers 29, 30, and 34 are connected to the antenna's inner ground plane 3 via second metal vias 28.

[0053] The present invention employs a multi-layer PCB stacking structure. First, a first sub-patch layer 6 is designed, located on a second dielectric substrate layer 5, generating a first resonance point at 38 GHz. Next, a second sub-patch layer 11 is stacked on a third dielectric substrate layer 10, generating a second resonance point at 30 GHz. To suppress surface waves, prevent energy leakage, and improve antenna gain, a first metal grid 7 and a second metal grid 12 are respectively provided on the second dielectric substrate layer 5 and the third dielectric substrate layer 10. A circle of first metal vias 15 surrounds the first metal grid 7 and the second metal grid 12, connecting them to the ground plane 3 of the inner layer of the antenna.

[0054] Furthermore, because the stacked structure obstructs the antenna pattern at high frequencies, a first parasitic patch layer 8 and a second parasitic patch layer 13 are provided on the second dielectric substrate layer 5 and the third dielectric substrate layer 10, respectively, to improve the antenna pattern and optimize the antenna impedance bandwidth. The four corners of the first sub-patch layer 6 and the second sub-patch layer 11 are chamfered to improve the antenna's impedance matching.

[0055] Furthermore, because out-of-phase currents exist at the edges of the patch antenna, which deteriorates the antenna's sidelobe level, a first rectangular slot 16 and a second rectangular slot 17 are introduced at the edges of the first sub-patch layer 6 and the second sub-patch layer 11, respectively, to reduce the out-of-phase current distribution at the edges of the first sub-patch layer 6 and the second sub-patch layer 11, thereby improving the antenna unit's sidelobe level and expanding its bandwidth. Finally, the traditional aperture-coupled fed multilayer microstrip antenna is improved by etching an "H"-shaped slot structure 14 on the ground plane 3 to replace the common rectangular slot, thereby achieving the purpose of expanding the antenna unit bandwidth. This allows the bottom feeder layer 1 to couple energy to the first sub-patch layer 6 through the slot for feeding. For a 1×4 antenna array, the unit spacing d is a very important indicator. By optimizing the unit spacing, a stable radiation pattern is obtained, achieving better ultra-wideband antenna performance.

[0056] like Figure 8 As shown, the return loss (S 11) and gain simulation results, such as Figure 8 The solid line shows that the antenna unit -10dB impedance bandwidth is 24.63-45.2GHz, and its relative bandwidth is 59%. Figure 8 The dotted line shows that the gain increases with frequency, with a 3 dB gain bandwidth of 28.6% (27 GHz - 36 GHz). The average gain of the antenna is greater than 7 dBi, with a peak gain of 10.37 dBi. The antenna unit achieves good performance within the operating frequency band.

[0057] like Figure 9 As shown, the return loss (S 11 ) and gain simulation results, such as Figure 9 The solid line shows that the antenna array -10dB impedance bandwidth is 24-45.25GHz, and its relative bandwidth is 61.4%, which shows good impedance matching performance. Figure 9 The dotted line shows that the antenna array has an average gain of 12.7 dBi and a peak gain of 17.2 dBi across the entire ultra-wideband. The antenna array achieves good performance within the operating frequency band and is suitable for 5G millimeter wave communications.

[0058] like Figure 10 As shown in the figure, the radiation patterns of the antenna unit at 28 GHz, 33 GHz, 38 GHz and 41 GHz are displayed. The antenna unit has stable radiation patterns at different frequencies. The cross-polarization of the antenna unit in the xoz plane is less than -30 dB, and the cross-polarization in the yoz plane is less than -40 dB.

[0059] like Figure 11 Figure 2 shows the radiation patterns of the antenna array at 28 GHz, 33 GHz, 38 GHz, and 41 GHz. It can be seen that the current antenna array has a stable radiation pattern at different frequencies. The cross-polarization of the antenna array in the xoz plane is less than -30 dB, and the cross-polarization in the yoz plane is less than -40 dB. Overall, the array's radiation pattern is relatively stable across the entire passband, achieving good radiation performance.

[0060] The foregoing description is merely a preferred embodiment of the present invention. It should be understood that the present invention is not limited to the form disclosed herein and should not be construed as excluding other embodiments. Rather, the present invention is capable of various other combinations, modifications, and improvements, and is capable of modifications within the scope of the concepts described herein, through the above teachings, or through techniques or knowledge in the relevant fields. Modifications and variations made by those skilled in the art that do not depart from the spirit and scope of the present invention are intended to be within the scope of the appended claims.

Claims

1. A millimeter-wave frequency band ultra-wideband packaged antenna unit, characterized by: The antenna unit comprises, from bottom to top, a feeder layer (1), a first dielectric substrate layer (2), a ground plane (3), a first adhesive layer (4), a second dielectric substrate layer (5), a first sub-patch layer (6), a first metal grid (7), a first parasitic patch layer (8), a second adhesive layer (9), a third dielectric substrate layer (10), a second sub-patch layer (11), a second metal grid (12) and a second parasitic patch layer (13); An H-shaped slot structure (14) is provided on the first dielectric substrate layer (2) to expand the antenna bandwidth; a first metal through hole (15) passes through the first dielectric substrate layer (2), the ground plate (3), the first adhesive layer (4), the second dielectric substrate layer (5), the first metal grid (7), the second adhesive layer (9), the third dielectric substrate layer (10) and the second metal grid (12); the first sub-patch layer (6), the first metal grid (7) and the first parasitic patch layer (8) are all provided on the second dielectric substrate layer (5), and The first sub-patch layer (6) and the first parasitic patch layer (8) are arranged inside the first metal grid (7), and the first sub-patch layer (6) generates a resonance point at 38 GHz; the second sub-patch layer (11), the second metal grid (12) and the second parasitic patch layer (13) are all located on the third dielectric substrate layer (10), and the second sub-patch layer (11) and the second parasitic patch layer (13) are arranged inside the second metal grid (12), and the second sub-patch layer (11) generates a second resonance point at 30 GHz; An isosceles triangle is cut off at the four corners of the first sub-patch layer (6) to improve antenna impedance matching, and four first rectangular slots (16) are opened at the edge of the first sub-patch layer (6) to reduce out-of-phase current distribution at the edge, thereby improving the antenna bandwidth and sidelobe level; An isosceles triangle is cut off at the four corners of the second sub-patch layer (11) to improve antenna impedance matching, and two second rectangular slits (17) are opened at the edge of the second sub-patch layer (11) to reduce the out-of-phase current distribution at the edge, thereby improving the antenna bandwidth and sidelobe level.

2. The millimeter wave frequency band ultra-wideband packaged antenna unit according to claim 1, characterized in that: Two first parasitic patch layers (8) are respectively arranged on both sides of the first sub-patch layer (6), and two second parasitic patch layers (13) are respectively arranged on both sides of the second sub-patch layer (11). The first parasitic patch layer (8) and the second parasitic patch layer (13) work together to repair the directional pattern at high frequencies.

3. A millimeter-wave frequency band ultra-wideband packaged antenna array, characterized by: The antenna array comprises a plurality of antenna units according to claim 1 or 2, wherein the plurality of antenna units are arranged in an array, and the antenna array is fed via a microstrip line feeding network (33), wherein the microstrip line feeding network (33) is arranged below the first dielectric substrate layer (2).

4. The millimeter wave frequency band ultra-wideband packaged antenna array according to claim 3, characterized in that: The microstrip line feeding network (33) comprises a two-stage symmetrical one-to-two equally divided feeding network, each stage of the one-to-two equally divided feeding network is composed of a multi-section impedance transformation microstrip line, and the corners of the microstrip line are cut to achieve better impedance matching between the microstrip lines.

5. The millimeter wave band ultra-wideband packaged antenna array according to claim 4, characterized in that: A two-stage one-divide-two equally divided feeding network forms a one-divide-four feeding network, and each branch feeding network comprises a first microstrip line (18), a second microstrip line (19), a third microstrip line (20), a fourth microstrip line (21), a fifth microstrip line (22), a sixth microstrip line (23), a seventh microstrip line (24), an eighth microstrip line (25), and a ninth microstrip line (26) connected in sequence, and the ninth microstrip line (26) is connected to an output port.

6. The millimeter-wave frequency band ultra-wideband packaged antenna array according to claim 5, characterized in that: The first microstrip line (18), the fifth microstrip line (22) and the ninth microstrip line (26) are all Z 0 = 50Ω microstrip line, Z 0 is impedance; The second microstrip line (19) and the sixth microstrip line (23) are both Z 0 = linear gradient from 50Ω to 91.7Ω; The third microstrip line (20) and the seventh microstrip line (24) are both Z 0 = Linear gradient from 91.7Ω ​​to 70.7Ω; The fourth microstrip line (21) and the eighth microstrip line (25) are both Z 0 = Linear gradient from 70.7Ω to 54.5Ω.

7. The millimeter wave frequency band ultra-wideband packaged antenna array according to claim 3, characterized in that: The microstrip line feeding network (33) is connected to the grounded coplanar waveguide to microstrip line transition structure (27) to jointly excite the antenna array; A first through hole (31) and a second through hole (32) are provided on the transition structure (27) from the grounded coplanar waveguide to the microstrip line for fixing the antenna feed connector.

8. The millimeter wave frequency band ultra-wideband packaged antenna array according to claim 7, characterized in that: The grounded coplanar waveguide to microstrip line transition structure (27) comprises a first external metal layer (29), a second external metal layer (30) and a third external metal layer (34), wherein the first external metal layer (29) and the second external metal layer (30) are arranged below the first dielectric substrate layer (2) and are symmetrical to each other; the third external metal layer (34) is arranged above the third dielectric substrate layer (10); the first external metal layer (29), the second external metal layer (30) and the third external metal layer (34) are connected to the ground plane (3) of the inner layer of the antenna through a second metal through hole (28).

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