Radio frequency power amplifier, radio frequency power amplification chip and radio frequency front-end module

Abstract

The invention provides a radio frequency power amplifier which comprises a first amplification transistor, a second amplification transistor, a capacitor network circuit and a power synthesis circuit, the capacitor network circuit comprises a first capacitor, a second capacitor and a capacitor unit, and the output end of the first amplification transistor is connected to the first input end of the power synthesis circuit through the first capacitor. The output end of the second amplification transistor is connected to the second input end of the power synthesis circuit through the second capacitor, one end of the capacitor unit is connected with the first input end of the power synthesis circuit, and the other end of the capacitor unit is connected with the second input end of the power synthesis circuit; the total capacitance value of the capacitor unit is smaller than the capacitance value of the first capacitor and the capacitance value of the second capacitor; under the combined action of the first capacitor, the second capacitor and the capacitor unit, impedance matching of the radio frequency power amplifier is realized, and the efficiency of the radio frequency power amplifier is improved.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to a radio frequency power amplifier, a radio frequency power amplifier chip, and a radio frequency front-end module. Background Art

[0002] With the rapid development of wireless communication technology, mobile communication systems are placing increasingly stringent performance demands on RF power amplifiers (RFPAs). As a key component of wireless communication system transmitters, RF PA performance directly impacts the communication quality and energy efficiency of the entire system. Traditional RF power amplifiers suffer from inefficiencies in certain scenarios (e.g., high-voltage scenarios), failing to meet the high efficiency requirements of modern communication systems.

[0003] Application Contents

[0004] The purpose of this application is to provide a radio frequency power amplifier, a radio frequency power amplifier chip and a radio frequency front-end module to improve the problem of poor efficiency of the radio frequency power amplifier.

[0005] A radio frequency power amplifier includes a first amplifying transistor, a second amplifying transistor, a capacitor network circuit and a power synthesis circuit, wherein the capacitor network circuit includes a first capacitor, a second capacitor and a capacitor unit, the output end of the first amplifying transistor is connected to the first input end of the power synthesis circuit through the first capacitor, the output end of the second amplifying transistor is connected to the second input end of the power synthesis circuit through the second capacitor, one end of the capacitor unit is connected to the first input end of the power synthesis circuit, and the other end of the capacitor unit is connected to the second input end of the power synthesis circuit, wherein the total capacitance value of the capacitor unit is less than the capacitance value of the first capacitor, and the total capacitance value of the capacitor unit is less than the capacitance value of the second capacitor.

[0006] A radio frequency power amplifier includes a first amplifying transistor, a second amplifying transistor, a first capacitor, a second capacitor, a capacitor unit, a power combining circuit, a first power supply terminal, and a second power supply terminal, wherein the output terminal of the first amplifying transistor is connected to the first input terminal of the power combining circuit through the first capacitor, and the output terminal of the second amplifying transistor is connected to the second input terminal of the power combining circuit through the second capacitor, one end of the capacitor unit is connected to the first input terminal of the power combining circuit, and the other end of the capacitor unit is connected to the second input terminal of the power combining circuit, the output terminal of the power combining circuit is connected to the signal output terminal, the first power supply terminal is configured to output a first supply voltage to the first amplifying transistor, and the second power supply terminal is configured to output a second supply voltage to the second amplifying transistor, wherein the first supply voltage and the second supply voltage are both greater than or equal to 4V.

[0007] A radio frequency power amplifier chip includes a bare core, a first amplifying transistor, a second amplifying transistor, a capacitor network circuit, and a power synthesis circuit arranged on the bare core, the matching circuit including a first capacitor, a second capacitor, and a capacitor unit, the output end of the first amplifying transistor is connected to the first input end of the power synthesis circuit via the first capacitor, the output end of the second amplifying transistor is connected to the second input end of the power synthesis circuit via the second capacitor, one end of the capacitor unit is connected to the first input end of the power synthesis circuit, and the other end of the capacitor unit is connected to the second input end of the power synthesis circuit, wherein the total capacitance value of the capacitor unit is less than the capacitance value of the first capacitor, and the total capacitance value of the capacitor unit is less than the capacitance value of the second capacitor.

[0008] A radio frequency front-end module includes a substrate, a bare core and a power synthesis circuit arranged on the substrate, the bare core including a first amplifying transistor, a second amplifying transistor and a capacitor network circuit; the capacitor network circuit includes a first capacitor, a second capacitor and a capacitor unit, the output end of the first amplifying transistor is connected to the first input end of the power synthesis circuit through the first capacitor, the output end of the second amplifying transistor is connected to the second input end of the power synthesis circuit through the second capacitor, one end of the capacitor unit is connected to the first input end of the power synthesis circuit, and the other end of the capacitor unit is connected to the second input end of the power synthesis circuit, wherein the total capacitance value of the capacitor unit is less than the capacitance value of the first capacitor, and the total capacitance value of the capacitor unit is less than the capacitance value of the second capacitor.

[0009] In this embodiment, a radio frequency power amplifier includes a first amplifying transistor, a second amplifying transistor, a capacitor network circuit, and a power combining circuit. The capacitor network circuit includes a first capacitor, a second capacitor, and a capacitor unit. The output end of the first amplifying transistor is connected to the first input end of the power combining circuit via the first capacitor, and the output end of the second amplifying transistor is connected to the second input end of the power combining circuit via the second capacitor. One end of the capacitor unit is connected to the first input end of the power combining circuit, and the other end of the capacitor unit is connected to the second input end of the power combining circuit. The total capacitance of the capacitor unit is less than the capacitance of the first capacitor, and the total capacitance of the capacitor unit is less than the capacitance of the second capacitor. In this embodiment, a capacitor network circuit consisting of the first capacitor, the second capacitor, and the capacitor unit is connected between the first amplifying transistor and the second amplifying transistor and the power combining circuit, and the total capacitance of the capacitor unit is less than the capacitance of the first capacitor, and the total capacitance of the capacitor unit is less than the capacitance of the second capacitor. Since no inductor is introduced into the capacitor network circuit, a higher Q value can be achieved. Moreover, under the combined action of the first capacitor, the second capacitor, and the capacitor unit, not only impedance matching of the radio frequency power amplifier can be achieved, but also the efficiency of the radio frequency power amplifier can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0011] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0012] Figure 1 A schematic structural diagram of a radio frequency power amplifier according to the present application;

[0013] Figure 2 Another structural diagram of a radio frequency power amplifier of the present application;

[0014] Figure 3 Another structural diagram of a radio frequency power amplifier of the present application;

[0015] Figure 4 Another structural diagram of a radio frequency power amplifier of the present application;

[0016] Figure 5 Another structural diagram of a radio frequency power amplifier of the present application;

[0017] Figure 6 Another structural diagram of a radio frequency power amplifier of the present application;

[0018] Figure 7 Another structural diagram of a radio frequency power amplifier for this application

[0019] Figure 8 A simulation diagram of a radio frequency power amplifier for this application;

[0020] Figure 9 This is a structural diagram of a radio frequency power amplifier chip for this application;

[0021] Figure 10 This is a structural diagram of a radio frequency front-end module of the present application;

[0022] Figure 11 A simulation diagram of a radio frequency power amplifier of the present application;

[0023] Figure 12 FIG. 4 is a simulation diagram of a radio frequency power amplifier in the related art. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0025] It should be noted that all directional indications in the embodiments of the present application (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the various components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0026] In addition, the descriptions of "first", "second", etc. in this application are for descriptive purposes only and should not be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" or "second" may explicitly or implicitly include at least one of such features. In addition, the technical solutions between the various embodiments can be combined with each other, but this must be based on the fact that they can be implemented by ordinary technicians in this field. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by this application.

[0027] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0028] It should be noted that all directional indications in the embodiments of the present application (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the various components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0029] In addition, the descriptions of "first", "second", etc. in this application are for descriptive purposes only and should not be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" or "second" may explicitly or implicitly include at least one of such features. In addition, the technical solutions between the various embodiments can be combined with each other, but this must be based on the fact that they can be implemented by ordinary technicians in this field. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by this application.

[0030] The RF power amplifier provided in the embodiment of the present application can be applied to mobile phones, tablet computers, wearable devices, vehicle-mounted devices, laptop computers, and other terminal devices, and can specifically be applied to the RF front-end modules of these terminal devices. This embodiment does not impose any restrictions on the specific type of terminal device.

[0031] This embodiment provides a radio frequency power amplifier, such as Figure 1 and Figure 2 As shown, it includes a first amplifying transistor 10, a second amplifying transistor 20, a capacitor network circuit and a power synthesis circuit 30, wherein the capacitor network circuit includes a first capacitor C11, a second capacitor C12 and a capacitor unit, the output end of the first amplifying transistor 10 is connected to the first input end of the power synthesis circuit through the first capacitor C11, the output end of the second amplifying transistor 20 is connected to the second input end of the power synthesis circuit through the second capacitor C12, one end of the capacitor unit is connected to the first input end of the power synthesis circuit, and the other end of the capacitor unit is connected to the second input end of the power synthesis circuit, wherein the total capacitance value of the capacitor unit is less than the capacitance value of the first capacitor, and the total capacitance value of the capacitor unit is less than the capacitance value of the second capacitor.

[0032] In at least one embodiment, the input end of the first amplifying transistor 10 is connected to the first input terminal A, and the input end of the second amplifying transistor 20 is connected to the second input terminal B. The first amplifying transistor 10 is configured to receive a first RF signal from the first input terminal A, amplify the first RF signal, and output a first amplified RF signal. The second amplifying transistor 10 is configured to receive a second RF signal from the second input terminal B, amplify the second RF signal, and output a second amplified RF signal.

[0033] In at least one embodiment, the RF power amplifier further includes a power divider (not shown in the figure), wherein the RF input signal is processed by the power divider and outputs a first RF signal and a second RF signal, which are respectively transmitted to the input end of the first amplifying transistor 10 and the input end of the second amplifying transistor 20. The power divider can be a balun, a branch transmission line, a coupler, or other conventional device capable of power distribution in the art.

[0034] It should be noted that this embodiment does not specifically limit the type of the RF power amplifier. The RF power amplifier can be any type of power amplifier, such as a push-pull power amplifier, a Doherty power amplifier, a balanced power amplifier, etc.

[0035] As an example, the RF power amplifier may be a push-pull power amplifier or a Doherty power amplifier, and a phase difference of 180° between the first RF signal and the second RF signal.

[0036] As another example, the RF power amplifier may also be a balanced-power amplifier, and the first RF signal and the second RF signal have a phase difference of 90°.

[0037] In at least one embodiment, the first amplifying transistor 10 and the second amplifying transistor 20 may be implemented as a single amplifying transistor, or may be formed by two or more amplifying transistors connected in series or in parallel, or may be implemented in other conventional manners in the art, without limitation herein. The first amplifying transistor 10 and the second amplifying transistor 20 may be bipolar junction transistors (BJTs), field effect transistors (FETs), etc.

[0038] In at least one implementation example, the first amplifying transistor 10 and the second amplifying transistor 20 are heterojunction transistors (HBTs). Exemplarily, the first amplifying transistor 10 and the second amplifying transistor 20 are heterojunction transistors implemented using a GaAs process.

[0039] In at least one implementation example, the first amplifying transistor 10 and the second amplifying transistor 20 are NPN transistors.

[0040] In at least one embodiment, the first amplifying transistor 10 and the second amplifying transistor 10 can be any amplifying stage in the RF power amplifier. For example, when the RF power amplifier includes a driving stage and an output stage, the first amplifying transistor and the second amplifying transistor in this embodiment can be any amplifying stage (i.e., a driving stage or an output stage) in the above-mentioned RF power amplifier.

[0041] In at least one embodiment, the capacitor network circuit includes a first capacitor C11, a second capacitor C12, and a capacitor unit. The capacitor unit may include one capacitor or multiple capacitors. For example, the capacitor unit may include a capacitor, a first end of which is connected to the first end of the power synthesis circuit, and a second end of which is connected to the second end of the power synthesis circuit. Alternatively, the capacitor unit may include two capacitors, one end of which is connected to the first end of the power synthesis circuit and the other end is grounded; and one end of the other capacitor is connected to the second end of the power synthesis circuit and the other end is grounded.

[0042] In at least one embodiment, the first capacitor, the second capacitor, and at least one capacitor included in the capacitor unit may be a physical capacitor element or a specific structure equivalent to a capacitor element.

[0043] In at least one embodiment, the power synthesis circuit can be any circuit that can perform power synthesis, such as a balun, a branch transmission line, a coupler, etc. Exemplarily, the power synthesis circuit includes a first balun. The first balun includes a primary coupling line and a secondary coupling line that are coupled to each other. The secondary coupling line and the primary coupling line can be any type of coupling line, such as a coil, a trace, etc. The coil of the secondary coupling line and the inductance of the primary coupling line can be any ratio such as [2:1], [1:1], [1,5:1], etc. The coupling mode of the secondary coupling line and the primary coupling line can be any coupling mode, such as upper and lower coupling, same-layer coupling, etc. This embodiment does not specifically limit the specific implementation method of the power synthesis circuit.

[0044] In the related art, the impedance conversion circuit between the first amplifying transistor, the second amplifying transistor and the power synthesis circuit usually adopts a matching circuit formed by a combination of capacitors and inductors to achieve impedance matching. However, the introduction of inductance will bring additional insertion loss, and it is difficult to achieve a high Q value due to the inductance. Therefore, it is difficult for the RF power amplifier to achieve high efficiency performance when achieving impedance matching. In response to this, the present embodiment connects a capacitor network circuit composed of a first capacitor, a second capacitor and a capacitor unit between the first amplifying transistor and the second amplifying transistor and the power synthesis circuit, and by making the total capacitance value of the capacitor unit less than the capacitance value of the first capacitor, the total capacitance value of the capacitor unit is less than the capacitance value of the second capacitor; since no additional inductance element is introduced in the capacitor network circuit, the capacitor network circuit can achieve a higher Q value, and under the joint action of the first capacitor, the second capacitor and the capacitor unit, not only can the impedance matching of the RF power amplifier be achieved, but the efficiency of the RF power amplifier can also be improved.

[0045] like Figure 8 As shown in the figure, it is a simulation effect diagram of the power added efficiency of the RF power amplifier, wherein the vertical axis is the power added efficiency PAE and the horizontal axis is the output power Pout. Curve a1 represents the simulation curve formed by connecting a capacitor network circuit composed of a first capacitor, a second capacitor and a capacitor unit between the first amplifying transistor and the second amplifying transistor and the power synthesis circuit in this embodiment, and curve a2 represents the simulation curve formed by connecting a matching circuit composed of a capacitor and an inductor between the first amplifying transistor and the second amplifying transistor and the power synthesis circuit in the related technology. Figure 8 It can be concluded that the power added efficiency PAE of the RF power amplifier in this embodiment is higher than the power added efficiency PAE of the RF power amplifier in the prior art, especially when the output power of the RF power amplifier increases, the power added efficiency PAE of the RF power amplifier in this embodiment is more significantly higher than the power added efficiency PAE of the RF power amplifier in the prior art.

[0046] In at least one embodiment, since the efficiency of the RF power amplifier is determined by impedance and voltage, when the voltage of the RF power amplifier increases, in order to ensure that the efficiency of the RF power amplifier is not affected, the impedance of the RF power amplifier needs to be increased. In this embodiment, a capacitor network circuit consisting of a first capacitor, a second capacitor, and a capacitor unit is connected between the first amplifying transistor and the second amplifying transistor and the power synthesis circuit. Under the action of the capacitor network circuit, the impedance of the output end of the first amplifying transistor and the impedance of the output end of the second amplifying transistor can be made greater than the impedance of the first input end and the impedance of the second input end of the power synthesis circuit, thereby achieving the impedance inverse transformation of the RF power amplifier, meeting the high impedance requirement of the RF power amplifier, and further ensuring the high efficiency performance of the RF power amplifier under a high voltage state (for example: the supply voltage of the RF power amplifier is greater than or equal to 4V).

[0047] like Figure 1 and Figure 11 As shown, Figure 11 The Smith chart of the RF power amplifier of the present application, point A1 is the impedance of the first input terminal D1 of the power synthesis circuit in the RF power amplifier of the present application, point A2 is the impedance of point D2 after the impedance conversion of the capacitor unit C13, and point A3 is the impedance of the output terminal D3 of the first amplifying transistor after passing through the first capacitor C11. Figure 11 As shown, the impedance at the output terminal D3 of the first amplifying transistor is significantly greater than the impedance at the first input terminal D1 of the power combining circuit in the RF power amplifier. That is, after the impedance conversion of the capacitor unit C13 and the first capacitor C11, the impedance at the output terminal D3 of the first amplifying transistor can be significantly increased, thereby achieving the impedance inverse transformation of the RF power amplifier, meeting the high impedance requirement of the RF power amplifier, and thus ensuring the high efficiency performance of the RF power amplifier in a high voltage state (for example: the power supply voltage of the RF power amplifier is greater than or equal to 4V). It should be noted that since the impedance change on the signal transmission path from the output terminal of the first amplifying transistor to the first input terminal of the power combining circuit is the same as the impedance change on the signal transmission path from the output terminal of the second amplifying transistor to the second input terminal of the power combining circuit, redundant description is not given here.

[0048] like Figure 12 As shown, Figure 12 is the Smith chart of the radio frequency power amplifier in the related art, B1 is the impedance of the first input end of the power synthesis circuit, B2 is the impedance of the output end of the first amplifying transistor after the first capacitor impedance conversion, and the radio frequency power amplifier in the related art does not have the capacitor unit C13, so Figure 12As shown, the impedance B2 at the output of the first amplifying transistor is significantly lower than the impedance B1 at the first input of the power combiner circuit. This means that, without the capacitor C13, the related art cannot achieve inverse impedance transformation of the RF power amplifier, nor can it meet the high impedance requirements of the RF power amplifier. It should be noted that since the impedance change in the signal transmission path from the output of the first amplifying transistor to the first input of the power combiner circuit is the same as the impedance change in the signal transmission path from the output of the second amplifying transistor to the second input of the power combiner circuit, a redundant description thereof will not be given here.

[0049] In this embodiment, a radio frequency power amplifier includes a first amplifying transistor, a second amplifying transistor, a capacitor network circuit, and a power combining circuit. The capacitor network circuit includes a first capacitor, a second capacitor, and a capacitor unit. The output end of the first amplifying transistor is connected to the first input end of the power combining circuit via the first capacitor, and the output end of the second amplifying transistor is connected to the second input end of the power combining circuit via the second capacitor. One end of the capacitor unit is connected to the first input end of the power combining circuit, and the other end of the capacitor unit is connected to the second input end of the power combining circuit. The total capacitance of the capacitor unit is less than the capacitance of the first capacitor, and the total capacitance of the capacitor unit is less than the capacitance of the second capacitor. In this embodiment, a capacitor network circuit consisting of the first capacitor, the second capacitor, and the capacitor unit is connected between the first amplifying transistor and the second amplifying transistor and the power combining circuit, and the total capacitance of the capacitor unit is less than the capacitance of the first capacitor, and the total capacitance of the capacitor unit is less than the capacitance of the second capacitor. Since no inductor is introduced into the capacitor network circuit, a higher Q value can be achieved. Moreover, under the combined action of the first capacitor, the second capacitor, and the capacitor unit, not only impedance matching of the radio frequency power amplifier can be achieved, but also the efficiency of the radio frequency power amplifier can be improved.

[0050] In a specific embodiment, the difference between the total capacitance value of the capacitor unit and the capacitance value of the first capacitor is A, wherein the range of A is within sixty percent of the capacitance value of the first capacitor to ninety percent of the capacitance value of the first capacitor; the difference between the total capacitance value of the capacitor unit and the capacitance value of the second capacitor is B, wherein the range of B is within sixty percent of the capacitance value of the second capacitor to ninety percent of the capacitance value of the second capacitor.

[0051] It can be understood that the total capacitance value of the capacitor unit is the capacitance value of all the capacitors included in the capacitor unit. If the capacitor unit includes one capacitor, the capacitance value of the capacitor is the total capacitance value of the capacitor unit. If the capacitor unit includes two capacitors connected in series, the total capacitance value of the capacitor unit is the total capacitance value of the two capacitors connected in series. If the capacitor unit includes two capacitors connected in parallel, the total capacitance value of the capacitor unit is the total capacitance value of the two capacitors connected in parallel.

[0052] In at least one embodiment, the capacitance value of the first capacitor is equal to the capacitance value of the second capacitor, and the capacitance values of the first capacitor and the second capacitor are both much greater than the total capacitance value of the capacitor unit.

[0053] As an example, the capacitance value of the first capacitor is Q1, the total capacitance value of the capacitor unit is Q2, the difference between the total capacitance value of the capacitor unit and the capacitance value of the first capacitor is A, A=Q1-Q2, and the value of A is in the range of [0.6*Q1,0.9*Q1], where 0.6*Q1 is sixty percent of the capacitance value of the first capacitor, and 0.9*Q1 is ninety percent of the capacitance value of the first capacitor. Furthermore, the difference A between the total capacitance value of the capacitor unit and the capacitance value of the first capacitor is in the range of [0.6*Q1,0.8*Q1], [0.7*Q1,0.9*Q1],

[0054] [0.6*Q1,0.7*Q1] and any other range.

[0055] Similarly, the capacitance of the second capacitor is Q2, and the difference between the total capacitance value of the capacitor unit and the capacitance value of the second capacitor is B, B=Q3-Q2, and the value of B is in the range of [0.6*Q3,0.9*Q3]. Among them, 0.6*Q3 is sixty percent of the capacitance value of the second capacitor, and 0.9*Q3 is ninety percent of the capacitance value of the second capacitor. Furthermore, the difference B between the total capacitance value of the capacitor unit and the capacitance value of the second capacitor is in any range of [0.6*Q3,0.8*Q3], [0.7*Q3,0.9*Q3], [0.6*Q3,0.7*Q3], etc.

[0056] In this embodiment, by reasonably setting the total capacitance value of the capacitor unit, the capacitance value of the first capacitor, and the capacitance value of the second capacitor, the efficiency of the radio frequency power amplifier can be further improved.

[0057] In a specific embodiment, if Figure 1 As shown, the capacitor unit includes a third capacitor C3 , a first end of the third capacitor C3 is connected to the first input end of the power synthesis circuit 30 , and a second end of the third capacitor C3 is connected to the second input end of the power synthesis circuit 30 .

[0058] The first capacitor C11, the second capacitor C12, and the third capacitor C13 may be SMD capacitors, MIM capacitors, MOM capacitors, or any other capacitor type. This embodiment does not specifically limit the implementation of the first capacitor C11, the second capacitor C12, and the third capacitor C13. The implementation of the first capacitor C11, the second capacitor C12, and the third capacitor C13 may be the same or different.

[0059] As an example, if the first capacitor C11 , the second capacitor C12 , and the third capacitor C13 are disposed on a substrate, it is preferable to use SMD capacitors.

[0060] As another example, if the first capacitor C11, the second capacitor C12, and the third capacitor C13 are provided on the chip, it is preferable to consider using MIM capacitors or MOM capacitors.

[0061] In this embodiment, a capacitor network circuit consisting of a first capacitor, a second capacitor, and a third capacitor is connected between the first amplifying transistor, the second amplifying transistor, and the power combining circuit. The impedance of the first input terminal and the second input terminal of the power combining circuit first undergoes impedance conversion by the third capacitor, and then undergoes impedance conversion by the first capacitor and the second capacitor. Under the action of the capacitor network circuit consisting of the first capacitor, the second capacitor, and the third capacitor, not only can the impedance matching of the RF power amplifier be achieved, thereby improving the efficiency of the RF power amplifier, but the impedance of the output terminal of the first amplifying transistor and the output terminal of the second amplifying transistor can also be made greater than the impedance of the first input terminal and the impedance of the second input terminal of the power combining circuit, thereby meeting the high impedance requirements of the RF power amplifier and further improving the high efficiency performance of the RF power amplifier in high-voltage scenarios. In addition, the impedance matching of the RF power amplifier can be achieved by three capacitors in this embodiment. Compared with the method of using more capacitors to achieve impedance matching in other embodiments, the RF power amplifier in this embodiment also has the advantages of high integration, low cost, and more flexible circuit design.

[0062] In a specific embodiment, if Figure 2 As shown, the capacitor unit includes a fourth capacitor C131 and a fifth capacitor C132, the first end of the fourth capacitor C131 is connected to the first input end of the power synthesis circuit 30, the second end of the fourth capacitor C131 is grounded, the first end of the fifth capacitor C132 is connected to the second input end of the power synthesis circuit, and the second end of the fifth capacitor C132 is grounded.

[0063] The fourth capacitor C131 and the fifth capacitor C132 may be SMD capacitors, MIM capacitors, MOM capacitors, or any other capacitor type. This embodiment does not specifically limit the implementation of the fourth capacitor C131 and the fifth capacitor C132. The implementation of the fourth capacitor C131 and the fifth capacitor C132 may be the same or different.

[0064] As an example, if the fourth capacitor C131 and the fifth capacitor C132 are disposed on a substrate, it is preferable to use SMD capacitors.

[0065] As another example, if the fourth capacitor C131 and the fifth capacitor C132 are provided on the chip, it is preferable to consider using MIM capacitors or MOM capacitors.

[0066] In at least one embodiment, the total capacitance of the capacitor unit is the series capacitance of the fourth capacitor C131 and the fifth capacitor C132. For example, if the capacitance of the fourth capacitor C131 is Q21 and the capacitance of the fifth capacitor C132 is Q22, then the total capacitance of the capacitor unit is Q2 = Q21*Q22 / Q21+Q22.

[0067] In this embodiment, a capacitor network circuit consisting of a first capacitor, a second capacitor, a fourth capacitor and a fifth capacitor is connected between the first amplifying transistor, the second amplifying transistor and the power synthesis circuit. The impedance of the first input end and the second input end of the power synthesis circuit first undergoes impedance conversion through the fourth capacitor C131 and the fifth capacitor C132, and then undergoes impedance conversion between the first capacitor and the second capacitor. Under the action of the capacitor network circuit consisting of the first capacitor, the second capacitor, the third capacitor, the fourth capacitor and the fifth capacitor, not only can the impedance matching of the RF power amplifier be achieved and the efficiency of the RF power amplifier be improved, but the impedance of the output end of the first amplifying transistor and the impedance of the output end of the second amplifying transistor can also be made greater than the impedance of the first input end and the impedance of the second input end of the power synthesis circuit, thereby meeting the high impedance requirement of the RF power amplifier. For the RF power amplifier in high-voltage scenarios, its high efficiency performance can be further improved.

[0068] In a specific embodiment, if Figure 3 As shown, the RF power amplifier also includes a first power supply terminal VCC1 and a second power supply terminal VCC2, the first power supply terminal VCC1 is configured to output a first power supply voltage to the first amplifying transistor 10, and the second power supply terminal VCC2 is configured to output a second power supply voltage to the second amplifying transistor 20, wherein the first power supply voltage and the second power supply voltage are both greater than or equal to 4V.

[0069] In at least one embodiment, the first power supply terminal VCC1 and the second power supply terminal VCC2 can be connected to the same power supply or to different power supplies. The first power supply voltage output by the first power supply terminal VCC1 to the first amplifying transistor 10 and the second power supply voltage output by the second power supply terminal VCC2 to the second amplifying transistor 20 are the same. The first power supply voltage and the second power supply voltage are both greater than or equal to 4V. For example, the first power supply voltage and the second power supply voltage are 4.5V, 4.8V, 5.0V, or 5.2V.

[0070] In at least one embodiment, since the higher the voltage, the higher the efficiency that can be achieved for the RF power amplifier under the same process, this embodiment makes the power supply voltage of the RF power amplifier greater than or equal to 4V. Compared with the solution in the related art where the power supply voltage of the RF power amplifier is 3.4V or 3.8V, this embodiment can achieve higher efficiency while ensuring impedance matching.

[0071] In at least one embodiment, the efficiency of the RF power amplifier is related to the impedance and voltage P=V / R, where P is the efficiency, V is the voltage, and R is the impedance. Therefore, when the voltage V of the RF power amplifier increases, in order to ensure that the efficiency P of the RF power amplifier is not affected, the impedance R of the RF power amplifier needs to be increased. In this embodiment, when the RF power amplifier is in a high-voltage state, (for example: when the first power supply voltage of the first amplifying transistor and the second power supply voltage of the second amplifying transistor are greater than or equal to 4V, in order to ensure the high efficiency performance of the RF power amplifier, a capacitor network circuit consisting of a first capacitor, a second capacitor and a capacitor unit is connected between the first amplifying transistor and the second amplifying transistor and the power synthesis circuit, the output impedance of the first amplifying transistor and the output impedance of the second amplifying transistor can be increased, thereby meeting the high impedance requirement of the RF power amplifier in the high-voltage state, thereby ensuring the high efficiency performance of the RF power amplifier.

[0072] In a specific embodiment, if Figure 4 As shown, the RF power amplifier also includes a first power supply inductor L11 and a second power supply inductor L12. The first power supply terminal VCC1 is connected to the output terminal of the first amplifying transistor 10 through the first power supply inductor L11, and the second power supply terminal VCC2 is connected to the output terminal of the second amplifying transistor 20 through the second power supply inductor L12.

[0073] In at least one embodiment, the first amplifying transistor 10 and the second amplifying transistor 20 are both BJT transistors, the first power supply terminal VCC1 is connected to the collector of the first amplifying transistor 10 through the first power supply inductor L11, and the second power supply terminal VCC2 is connected to the collector of the second amplifying transistor 20 through the second power supply inductor L12.

[0074] In at least one embodiment, the first amplifying transistor 10 and the second amplifying transistor 20 are both MOS transistors, the first power supply terminal VCC1 is connected to the source of the first amplifying transistor 10 through the first power supply inductor L11, and the second power supply terminal VCC2 is connected to the source of the second amplifying transistor 20 through the second power supply inductor L12.

[0075] In at least one embodiment, the first supply inductor L11 and the first supply inductor L12 both have an inductance of a few nanohenries or tens of nanohenries. Since the inductance values of the first supply inductor L11 and the first supply inductor L12 are relatively large, the first supply inductor L11 and the first supply inductor L12 do not affect the impedance matching of the fundamental signal.

[0076] In this embodiment, the first power supply end is connected to the output end of the first amplifying transistor through the first power supply inductor, and the second power supply end is connected to the output end of the second amplifying transistor through the second power supply inductor. The first power supply inductor and the second power supply inductor can also play a role in overvoltage protection, avoiding damage to other components in the circuit when the first supply voltage and the second supply voltage are large and the power supply is suddenly disconnected or connected.

[0077] In a specific embodiment, if Figure 4 As shown, the RF power amplifier also includes a first harmonic processing circuit and a second harmonic processing circuit, wherein a first end of the first harmonic processing circuit is connected to the output end of the first amplifying transistor, and a second end of the first harmonic processing circuit is grounded; a first end of the second harmonic processing circuit is connected to the output end of the second amplifying transistor, and a second end of the second harmonic processing circuit is grounded, the first harmonic processing circuit includes a first resonant capacitor C21 and a first resonant inductor L21 connected in series, and the second harmonic processing circuit includes a second resonant capacitor C22 and a second resonant inductor L22 connected in series.

[0078] In at least one embodiment, the first harmonic processing circuit and the second harmonic processing circuit are configured to suppress or filter out harmonic signals of the RF power amplifier. Preferably, the first harmonic processing circuit and the second harmonic processing circuit are configured to suppress or filter out high-order wave signals (e.g., harmonic signals greater than or equal to 2f0) of the RF power amplifier.

[0079] As an example, by making the first resonant capacitor C21 and the first resonant inductor L21 resonate at 2f0, and the second resonant capacitor C22 and the second resonant inductor L22 resonate at 2f0, where f0 is the center frequency of the RF power amplifier; the second-order harmonic signal of the RF power amplifier can be suppressed or filtered.

[0080] As another example, by making the first resonant capacitor C21 and the first resonant inductor L21 resonate at 3f0, and the second resonant capacitor C22 and the second resonant inductor L22 resonate at 3f0, where f0 is the center frequency of the RF power amplifier, the third-order harmonic signal of the RF power amplifier can be suppressed or filtered.

[0081] In actual application, the values of the first resonant capacitor C21, the first resonant inductor L21, the second resonant capacitor C22, and the second resonant inductor L22 can be flexibly adjusted based on the harmonic signal that the RF power amplifier needs to suppress. It should be noted that since the first harmonic processing circuit and the second harmonic processing circuit in this embodiment are mainly used to suppress or filter out high-order harmonic signals, that is, the first harmonic processing circuit and the second harmonic processing circuit mainly resonate at high-order frequency points, the first harmonic processing circuit and the second harmonic processing circuit will not affect the impedance matching of the fundamental signal when suppressing harmonics.

[0082] In a specific embodiment, the first resonant capacitor C21 and the first supply inductor L11 are configured to resonate within the operating frequency band of the RF power amplifier, and the second resonant capacitor C22 and the second supply inductor L12 are configured to resonate within the operating frequency band of the RF power amplifier.

[0083] In at least one embodiment, the first resonant capacitor C21 and the first supply inductor L11 are configured such that the capacitive reactance of the first resonant capacitor and the inductive reactance of the first supply inductor are offset on the impedance path, and the second resonant capacitor C22 and the second supply inductor L12 are configured such that the capacitive reactance of the second resonant capacitor C22 and the inductive reactance of the second supply inductor L12 are offset on the impedance path.

[0084] In this embodiment, to achieve the purpose of canceling out the capacitive reactance of the first resonant capacitor and the inductive reactance of the first supply inductor, and canceling out the capacitive reactance of the second resonant capacitor and the inductive reactance of the second supply inductor, the first resonant capacitor and the first supply inductor resonate within the operating frequency band of the RF power amplifier, and the second resonant capacitor and the second supply inductor resonate within the operating frequency band of the RF power amplifier. Specifically, the first resonant capacitor and the first supply inductor resonate at the center frequency of the RF power amplifier's operating frequency band, and the second resonant capacitor and the second supply inductor resonate at the center frequency of the RF power amplifier's operating frequency band. Therefore, the impedance of the fundamental wave signal of the RF power amplifier does not change after passing through the first resonant capacitor and the first supply inductor, nor does it change after passing through the second resonant capacitor and the second supply inductor. The impedance of the fundamental wave signal does not change due to the connection of the first resonant capacitor and the first supply inductor, the second resonant capacitor and the second supply inductor. Thus, while achieving overvoltage protection and harmonic suppression, the impedance matching and high efficiency requirements of the RF power amplifier are still guaranteed.

[0085] In a specific embodiment, the RF power amplifier is configured to operate in a first frequency band, wherein the first frequency band is in the range of [2.4 GHz, 8 GHz], the total capacitance value of the capacitor unit is in the range of [0.3 pF, 1 pF], and the capacitance values of the first capacitor and the second capacitor are respectively in the range of [3 pF, 20 pF].

[0086] For example, the first frequency band may be [2.4GHz, 3.2GHz], [3.2GHz, 4.3GHz], [4.3GHz, 5.2GHz],

[0087] Any frequency band such as [5.2GHz,6.1GHz], [6.1GHz,8GHz].

[0088] In at least one embodiment, as the operating frequency band of the RF power amplifier is higher, it is more difficult to achieve high efficiency. Specifically, when the RF power amplifier is configured to operate at an operating frequency band greater than 2.4 GHz. For example, when the RF power amplifier is configured to operate within the operating frequency band range of [2.4 GHz, 8 GHz], by configuring the total capacitance value of the capacitor unit to be within the range of [0.3 pF, 1 pF], the capacitance value of the first capacitor and the capacitance value of the second capacitor are respectively within the range of [3 pF, 20 pF], thereby achieving impedance matching and high efficiency of the RF power amplifier within the operating frequency band range of [2.4 GHz, 8 GHz].

[0089] In at least one embodiment, the total capacitance value of the capacitor unit can be [0.3pF, 0.5pF], [0.5pF, 0.7pF],

[0090] Any range value such as [0.7pF,0.9pF], [0.3pF,0.6pF], [0.4pF,0.7pF].

[0091] In at least one embodiment, the capacitance value of the first capacitor and the capacitance value of the second capacitor can be [3pF, 5pF], [5pF, 12pF],

[0092] Any range value such as [12pF,16pF], [16pF,20pF], [3pF,10pF], [6pF,14pF].

[0093] In a specific embodiment, the RF power amplifier is configured to operate in a second frequency band, wherein the second frequency band is in the range of [5.125 GHz, 7.125 GHz], the total capacitance value of the capacitor unit is in the range of [0.5 pF, 0.8 pF], and the capacitance values of the first capacitor and the second capacitor are respectively in the range of [3 pF, 6 pF].

[0094] In at least one embodiment, when the RF power amplifier is configured to operate within the frequency band range of [5.125GHz, 7.125GHz], by configuring the total capacitance value of the capacitor unit to be within the range of [0.5pF, 0.8pF]], the capacitance values of the first capacitor and the second capacitor to be within the range of [3pF, 6pF] respectively, the impedance matching and high efficiency of the RF power amplifier within the operating frequency band range of [5.125GHz, 7.125GHz] can be achieved.

[0095] In at least one embodiment, the total capacitance value of the capacitor unit can be [0.5pF, 0.6pF], [0.6pF, 0.7pF],

[0096] [0.7pF, 0.8pF] and other range values.

[0097] In at least one embodiment, the capacitance value of the first capacitor and the capacitance value of the second capacitor can be [3pF, 4pF], [4pF, 5pF],

[0098] [5pF, 6pF] and other arbitrary range values.

[0099] It should be noted that the total capacitance value of the capacitor unit in all embodiments of the present application is the capacitance value of all capacitors included in the capacitor unit added together. If the capacitor unit includes one capacitor, the capacitance value of the capacitor is the total capacitance value of the capacitor unit. If the capacitor unit includes two capacitors connected in series, the total capacitance value of the capacitor unit is the total capacitance value of the two capacitors connected in series. If the capacitor unit includes two capacitors connected in parallel, the total capacitance value of the capacitor unit is the total capacitance value of the two capacitors connected in parallel.

[0100] In a specific embodiment, the capacitor network circuit is configured such that the impedance of the output terminal of the first amplifying transistor and the impedance of the output terminal of the second amplifying transistor are greater than or equal to 8 ohms.

[0101] In at least one embodiment, the impedance of the output terminal of the first amplifying transistor and the impedance of the output terminal of the second amplifying transistor are greater than or equal to 8 ohms and less than or equal to 100 ohms. For example, the impedance of the output terminal of the first amplifying transistor and the impedance of the output terminal of the second amplifying transistor are greater than or equal to 8 ohms and less than or equal to 50 ohms, or the impedance of the output terminal of the first amplifying transistor and the impedance of the output terminal of the second amplifying transistor are greater than or equal to 8 ohms and less than or equal to 25 ohms, etc.

[0102] In at least one embodiment, when the RF power amplifier is in a high-voltage state (for example, the power supply voltage of the RF power amplifier is greater than or equal to 4V), in order to ensure the high efficiency of the RF power amplifier, it is necessary to increase the impedance of the RF power amplifier, that is, to increase the impedance of the output end of the first amplifying transistor and the impedance of the output end of the second amplifying transistor. In this embodiment, a capacitor network circuit formed by a combination of a first capacitor, a second capacitor and a capacitor unit is connected between the first amplifying transistor and the second amplifying transistor and the power synthesis circuit. The capacitor network circuit can make the impedance of the output end of the first amplifying transistor and the impedance of the output end of the second amplifying transistor greater than or equal to 8 ohms, thereby meeting the high impedance requirement of the RF power amplifier and ensuring the high efficiency of the RF power amplifier under high-voltage state.

[0103] In a specific embodiment, the capacitor network circuit is configured such that the real impedance of the output terminal of the first amplifying transistor and the real impedance of the output terminal of the second amplifying transistor are greater than the real impedance of the output terminal of the power combining circuit.

[0104] In at least one embodiment, since the output impedance of the power synthesis circuit is generally greater than or equal to the input impedance of the power synthesis circuit, the real impedance of the output end of the first amplifying transistor and the real impedance of the output end of the second amplifying transistor are also greater than the real impedance of the input end of the power synthesis circuit.

[0105] As an example, the real impedance of the output end of the power synthesis circuit is 25 ohms. By connecting a capacitor network circuit composed of a first capacitor, a second capacitor and a capacitor unit between the first amplifying transistor and the second amplifying transistor and the power synthesis circuit, the capacitor network circuit can realize impedance inverse transformation, so the real impedance of the output end of the first amplifying transistor and the real impedance of the output end of the second amplifying transistor are greater than 25 ohms.

[0106] As another example, the real impedance of the output end of the power synthesis circuit is 50 ohms. By connecting a capacitor network circuit composed of a first capacitor, a second capacitor and a capacitor unit between the first amplifying transistor and the second amplifying transistor and the power synthesis circuit, the capacitor network circuit can realize impedance inverse transformation, so the real impedance of the output end of the first amplifying transistor and the real impedance of the output end of the second amplifying transistor are greater than 50 ohms.

[0107] In this embodiment, by connecting a capacitor network circuit consisting of a first capacitor, a second capacitor and a capacitor unit between the first amplifying transistor, the second amplifying transistor and the power synthesis circuit, the capacitor network circuit can realize impedance inverse transformation. Therefore, the capacitor network circuit can make the real impedance of the output end of the first amplifying transistor and the real impedance of the output end of the second amplifying transistor greater than the real impedance of the output end of the power synthesis circuit, thereby meeting the high impedance requirement of the RF power amplifier and ensuring the high efficiency of the RF power amplifier under high voltage state.

[0108] In a specific embodiment, if Figure 5 As shown, the power synthesis circuit includes a first balun 30, which includes a primary coupling line 201 and a secondary coupling line 202 coupled to each other, wherein the first end of the primary coupling line 201 is connected to one end of the capacitor unit, the second end of the primary coupling line 201 is connected to the other end of the capacitor unit, the first end of the secondary coupling line 202 is connected to the signal output end, and the second end of the secondary coupling line 202 is grounded.

[0109] In this embodiment, the power synthesis circuit includes a first balun, which can perform power synthesis on the first RF amplified signal output by the first amplifying transistor and the second RF amplified signal output by the second amplifying transistor, and can also achieve flexible impedance adjustment.

[0110] In at least one embodiment, the first balun includes a mutually coupled primary coupling line and a secondary coupling line. The primary coupling line and the secondary coupling line may be formed by coils, coupling lines, or wires of any shape. This embodiment does not specifically limit the implementation of the primary coupling line and the secondary coupling line in the first balun.

[0111] In a specific embodiment, the inductance ratio of the secondary coupling line 202 to the primary coupling line 201 is in the range of [1.1:1, 0.9:1]. For example, the inductance ratio of the secondary coupling line to the primary coupling line is 1:1.

[0112] Because the impedance conversion of the RF power amplifier in this application is primarily achieved through a capacitor network circuit, the inductance ratio of the secondary coupling line and the primary coupling line of the first balun can be set within the range of [1.1:1, 0.9:1]. The first balun essentially does not participate in the impedance conversion of the RF power amplifier. This reduces the performance loss of the first balun due to an excessively large inductance ratio while achieving high efficiency of the RF power amplifier. Furthermore, during layout design, the area occupied by the first balun can be significantly reduced, enabling a miniaturized design of the RF power amplifier.

[0113] In a specific embodiment, if Figure 7 As shown, the first routing path of the primary coupling line 201 follows the second routing path of the primary coupling line 202, the first routing path is the routing path from the first end of the primary coupling line to the second end of the primary coupling line, and the second routing path is the routing path from the second end of the primary coupling line to the second end of the secondary coupling line.

[0114] In this embodiment, since the impedance conversion of the RF power amplifier is mainly achieved through the capacitor network circuit, the first balun basically does not affect the impedance conversion of the RF power amplifier. Therefore, the first balun is preferably a strip balun, that is, the primary coupling line and the secondary coupling line are selected to be realized by the first routing path and the second routing path following each other, thereby greatly reducing the additional loss brought by the first balun, and further improving the efficiency of the RF power amplifier.

[0115] In at least one embodiment, the routing path of the primary coupled line from the first input terminal to the second input terminal is referred to as the first routing path, and the routing path of the secondary coupled line from the first output terminal to the second output terminal is referred to as the second routing path, wherein the first routing path follows the second routing path. In other words, if the first input terminal is used as the starting point of the primary coupled line, the second input terminal is used as the end point of the primary coupled line, the first output terminal is used as the starting point of the secondary coupled line, and the second output terminal is used as the end point of the secondary coupled line 202, then the primary coupled line and the secondary coupled line each have substantially the same direction from their starting point to their end point and exhibit substantially the same shape.

[0116] In the embodiments of the present application, "following" means that each segment of the primary coupling line is substantially parallel to the corresponding segment of the secondary coupling line. For example, if both the primary coupling line and the secondary coupling line are straight or curved, the primary coupling line and the secondary coupling line are generally parallel to each other. If each primary coupling line and the secondary coupling line include one or more bends, the primary coupling line and the secondary coupling line can be divided into multiple segments based on the bends. In this case, each segment of the primary coupling line is substantially parallel to the corresponding segment of the secondary coupling line.

[0117] Since the paths of the primary coupling line and the secondary coupling line from the starting point to the end point follow each other, each segment of the primary coupling line can be coupled with the corresponding segment of the secondary coupling line. Conversely, each segment of the secondary coupling line can also be coupled with the corresponding stage of the primary coupling line, resulting in a better coupling degree.

[0118] On the other hand, because the primary and secondary coupling lines are coupled to each other, the distance between them is very small, and they follow each other. Therefore, the starting points of the primary and secondary coupling lines are close to each other, and the end points are also close to each other. In other words, the first input end of the primary coupling line and the first output end of the secondary coupling line are arranged close to each other, and the second input end of the primary coupling line and the second output end of the secondary coupling line are arranged close to each other.

[0119] In at least one embodiment, the primary coupling line 201 and the secondary coupling line 202 of the first balun are generally linear structures, and their shape and layout can be flexibly set to adapt to the layout of other circuits in the RF power amplifier, making the overall structure of the power amplifier more compact, thereby reducing the area occupied by the power amplifier.

[0120] In at least one embodiment, the primary coupling line includes a first primary coupling line segment, a second primary coupling line segment, and a third primary coupling line segment connected in parallel, and the secondary coupling line includes a first secondary coupling line segment and a second secondary coupling line segment connected in parallel, the first secondary coupling line segment is arranged between the first primary coupling line segment and the second primary coupling line segment, and the second secondary coupling line segment is arranged between the second primary coupling line segment and the third primary coupling line segment.

[0121] In at least one embodiment, the primary coupling line includes a first primary coupling line segment, a second primary coupling line segment, a third primary coupling line segment, and a fourth primary coupling line segment connected in parallel, and the secondary coupling line includes a first secondary coupling line segment, a second secondary coupling line segment, and a third secondary coupling line segment connected in parallel, the first secondary coupling line segment is arranged between the first primary coupling line segment and the second primary coupling line segment, the second secondary coupling line segment is arranged between the second primary coupling line segment and the third primary coupling line segment; and the third secondary coupling line segment is arranged between the third primary coupling line segment and the fourth primary coupling line segment.

[0122] It should be noted that, in this embodiment, the primary coupling line may include N primary coupling line segments, and the secondary coupling line may include M secondary coupling line segments. The number of primary coupling line segments and the number of secondary coupling line segments may be the same or different.

[0123] In at least one embodiment, the primary coupling line segment and the secondary coupling line segment may be in any shape, such as a straight line, a broken line, an arc, an L shape, or a U shape.

[0124] In at least one embodiment, to improve the coupling between the primary coupling line and the secondary coupling line, the primary coupling line can be split into two parallel coupling lines, and the secondary coupling line can be positioned between the two split primary coupling line segments to strengthen the coupling between the primary coupling line and the secondary coupling line. For example, the line width of each primary coupling line can be slightly smaller than the line width of the secondary coupling line, or remain approximately the same as the line width of the secondary coupling line, thereby improving the coupling of the first balun. Alternatively, at least one secondary coupling line can be split into two parallel coupling line segments, and the primary coupling line can be positioned between the two split secondary coupling lines to strengthen the coupling between the primary coupling line and the secondary coupling line. Optionally, the line width of each split secondary coupling line can be slightly smaller than the line width of the primary coupling line, or remain approximately the same as the line width of the primary coupling line, further improving the coupling of the first balun.

[0125] In at least one embodiment, the primary coupling line or the secondary coupling line can be split into more lines, and the primary coupling lines and the secondary coupling lines are arranged alternately to further increase the coupling area between the primary coupling lines and the secondary coupling lines and improve the coupling degree of the first balun.

[0126] According to the above embodiments, the number of primary coupling line segments and secondary coupling line segments can be one or more, respectively. When there are multiple primary coupling line segments, the multiple primary coupling line segments can be connected in series or in parallel; when there are multiple secondary coupling line segments, the multiple secondary coupling line segments can be connected in series or in parallel. The number of primary coupling line segments, the number of secondary coupling line segments, and the connection relationship between the multiple primary coupling line segments and the connection relationship between the multiple secondary coupling line segments can be set based on the required inductance ratio and coupling degree.

[0127] In at least one embodiment, the input terminal of the first amplifying transistor is configured to receive a first RF signal, the input terminal of the second amplifying transistor is configured to receive a second RF signal, and the first RF signal and the second RF signal are a pair of differential signals.

[0128] In at least one embodiment, the first RF signal and the second RF signal are a pair of differential signals, and the phase difference between the first RF signal and the second RF signal is 180°. In this case, the RF power amplifier can be a push-pull power amplifier or a Doherty power amplifier.

[0129] In at least one embodiment, Figure 6 As shown, the RF power amplifier also includes an output matching circuit, which includes a third inductor L31 and a sixth capacitor C31. The first end of the third inductor L31 is connected to the output end of the power synthesis circuit, the second end of the third inductor C31 is connected to the signal output end, the first end of the sixth capacitor C31 is connected to the second end of the third inductor, and the second end of the sixth capacitor C31 is grounded.

[0130] In at least one embodiment, the sixth capacitor C31 may be a physical capacitor element or a specific structure equivalent to a capacitor element. For example, the sixth capacitor C31 may be a parasitic capacitor equivalent to a subsequent switch chip. The third inductor L31 may be a physical inductor element or a specific structure equivalent to an inductor element. For example, the third inductor L31 may be an inductor equivalent to the connecting line when the power synthesis circuit is connected to the subsequent switch chip. In this embodiment, the third inductor L31 and the sixth capacitor C31 can achieve flexible adjustment of the output impedance of the RF power amplifier.

[0131] This embodiment also provides a radio frequency power amplifier, including a first amplifying transistor, a second amplifying transistor, a first capacitor, a second capacitor, a capacitor unit, a power synthesis circuit, a first power supply end and a second power supply end, wherein the output end of the first amplifying transistor is connected to the first input end of the power synthesis circuit through the first capacitor, and the output end of the second amplifying transistor is connected to the second input end of the power synthesis circuit through the second capacitor, one end of the capacitor unit is connected to the first input end of the power synthesis circuit, and the other end of the capacitor unit is connected to the second input end of the power synthesis circuit, the output end of the power synthesis circuit is connected to the signal output end, the first power supply end is configured to output a first power supply voltage to the first amplifying transistor, and the second power supply end is configured to output a second power supply voltage to the second amplifying transistor, wherein the first power supply voltage and the second power supply voltage are both greater than or equal to 4V.

[0132] It should be noted that the specific implementation methods and functions of the first amplifying transistor, the second amplifying transistor, the first capacitor, the second capacitor, the capacitor unit, the power synthesis circuit, the first power supply end and the second power supply end in this embodiment are the same as those in the above embodiment and are not redundantly described here.

[0133] In at least one embodiment, since the higher the voltage, the higher the efficiency that can be achieved for the RF power amplifier under the same process, this embodiment makes the first power supply voltage and the second power supply voltage of the first amplifying transistor both greater than or equal to 4V. Compared with the solution in the related art in which the power supply voltage of the RF power amplifier is 3.4V or 3.8V, this embodiment can achieve higher efficiency while ensuring impedance matching.

[0134] In at least one embodiment, the efficiency of the RF power amplifier is related to the impedance and voltage P=V / R, where P is the efficiency, V is the voltage, and R is the impedance. Therefore, when the voltage V of the RF power amplifier increases, in order to ensure that the efficiency P of the RF power amplifier is not affected, the impedance R of the RF power amplifier needs to be increased. In this embodiment, the RF power amplifier is in a high-voltage state (for example, when the first power supply voltage of the first amplifying transistor and the second power supply voltage of the second amplifying transistor are greater than or equal to 4V). Therefore, in order to ensure the high efficiency performance of the RF power amplifier, a capacitor network circuit consisting of a first capacitor, a second capacitor, and a capacitor unit is connected between the first amplifying transistor and the second amplifying transistor and the power synthesis circuit. The output impedance of the first amplifying transistor and the output impedance of the second amplifying transistor can be increased, thereby meeting the high impedance requirement of the RF power amplifier in the high-voltage state, thereby ensuring the high efficiency performance of the RF power amplifier.

[0135] In a specific embodiment, the total capacitance value of the capacitor unit is less than the capacitance value of the first capacitor, and the total capacitance value of the capacitor unit is less than the capacitance value of the second capacitor. The total capacitance value of the capacitor unit is the capacitance value of all capacitors included in the capacitor unit added together.

[0136] In this embodiment, by limiting the total capacitance value of the capacitor unit to be smaller than the capacitance value of the first capacitor, the total capacitance value of the capacitor unit is smaller than the capacitance value of the second capacitor, not only can the impedance matching of the RF power amplifier be achieved, but also the efficiency of the RF power amplifier can be improved.

[0137] In at least one embodiment, the difference between the total capacitance value of the capacitor unit and the capacitance value of the first capacitor is A, wherein the range of A is within sixty percent of the capacitance value of the first capacitor to ninety percent of the capacitance value of the first capacitor; the difference between the total capacitance value of the capacitor unit and the capacitance value of the second capacitor is B, wherein the range of B is within sixty percent of the capacitance value of the second capacitor to ninety percent of the capacitance value of the second capacitor.

[0138] In at least one embodiment, the capacitor unit includes a capacitor, and the capacitance value of the capacitor is the total capacitance value of the capacitor unit. Alternatively, the capacitor unit includes two capacitors connected in series, and the total capacitance value of the capacitor unit is the total capacitance value of the two capacitors connected in series. Alternatively, the capacitor unit includes two capacitors connected in parallel, and the total capacitance value of the capacitor unit is the total capacitance value of the two capacitors connected in parallel.

[0139] In at least one embodiment, the capacitance value of the first capacitor is equal to the capacitance value of the second capacitor, and the capacitance values of the first capacitor and the second capacitor are both much greater than the total capacitance value of the capacitor unit.

[0140] As an example, the capacitance value of the first capacitor is Q1, the total capacitance value of the capacitor unit is Q2, the difference between the total capacitance value of the capacitor unit and the capacitance value of the first capacitor is A, A=Q1-Q2, and the value of A is in the range of [0.6*Q1,0.9*Q1], where 0.6*Q1 is sixty percent of the capacitance value of the first capacitor, and 0.9*Q1 is ninety percent of the capacitance value of the first capacitor. Furthermore, the difference A between the total capacitance value of the capacitor unit and the capacitance value of the first capacitor is in the range of [0.6*Q1,0.8*Q1], [0.7*Q1,0.9*Q1],

[0141] [0.6*Q1,0.7*Q1] and any other range.

[0142] Similarly, the capacitance value of the second capacitor is Q3, the total capacitance value of the capacitor unit is Q2, the difference between the total capacitance value of the capacitor unit and the capacitance value of the second capacitor is B, B=Q3-Q2, and the value of B is in the range of [0.6*Q3,0.9*Q3]. Among them, 0.6*Q3 is sixty percent of the capacitance value of the second capacitor, and 0.9*Q3 is ninety percent of the capacitance value of the second capacitor. Furthermore, the difference B between the total capacitance value of the capacitor unit and the capacitance value of the second capacitor is in any one of the ranges of [0.6*Q3,0.8*Q3], [0.7*Q3,0.9*Q3], [0.6*Q3,0.7*Q3], etc.

[0143] In this embodiment, by reasonably setting the total capacitance value of the capacitor unit, the capacitance value of the first capacitor, and the capacitance value of the second capacitor, the efficiency of the radio frequency power amplifier can be further improved.

[0144] In at least one embodiment, Figure 4As shown, the RF power amplifier also includes a first power supply inductor VCC1 and a second power supply inductor VCC2. The first power supply terminal VCC1 is connected to the first amplifying transistor output terminal through the first power supply inductor L11, and the second power supply terminal VCC2 is connected to the second amplifying transistor output terminal through the second power supply inductor L12.

[0145] As an example, the first amplifying transistor 10 and the second amplifying transistor 20 are both BJT transistors, the output end of the first amplifying transistor is the collector of the first amplifying transistor 10 , and the output end of the second amplifying transistor 20 is the collector of the second amplifying transistor 20 .

[0146] As an example, the first amplifying transistor 10 and the second amplifying transistor 20 are both MOS transistors, the output end of the first amplifying transistor is the drain of the first amplifying transistor 10 , and the output end of the second amplifying transistor 20 is the drain of the second amplifying transistor 20 .

[0147] In this embodiment, the first power supply inductor and the second power supply inductor can play a role in overvoltage protection, thereby preventing other components in the circuit from being damaged when the power supply is suddenly disconnected or connected when the first supply voltage and the second supply voltage are large.

[0148] In a specific embodiment, the RF power amplifier also includes a first harmonic processing circuit and a second harmonic processing circuit, wherein the first end of the first harmonic processing circuit is connected to the output end of the first amplifying transistor, and the second end of the first harmonic processing circuit is grounded; the first end of the second harmonic processing circuit is connected to the output end of the second amplifying transistor, and the second end of the second harmonic processing circuit is grounded, the first harmonic processing circuit includes a first resonant capacitor, and the second harmonic processing circuit includes a second resonant capacitor; wherein the first resonant capacitor and the first power supply inductor are configured to resonate within the operating frequency band of the RF power amplifier, and the second resonant capacitor and the second power supply inductor are configured to resonate within the operating frequency band of the RF power amplifier.

[0149] In at least one embodiment, the first harmonic processing circuit and the second harmonic processing circuit are configured to suppress or filter out harmonic signals of the RF power amplifier. Preferably, the first harmonic processing circuit and the second harmonic processing circuit are configured to suppress or filter out high-order wave signals (e.g., harmonic signals greater than or equal to 2f0) of the RF power amplifier.

[0150] In at least one embodiment, the first resonant capacitor and the first supply inductor are configured to resonate within the operating frequency band of the RF power amplifier, and the second resonant capacitor and the second supply inductor are configured to resonate within the operating frequency band of the RF power amplifier.

[0151] In this embodiment, to achieve the purpose of canceling out the capacitive reactance of the first resonant capacitor and the inductive reactance of the first supply inductor, and canceling out the capacitive reactance of the second resonant capacitor and the inductive reactance of the second supply inductor, the first resonant capacitor and the first supply inductor resonate within the operating frequency band of the RF power amplifier, and the second resonant capacitor and the second supply inductor resonate within the operating frequency band of the RF power amplifier. Specifically, the first resonant capacitor and the first supply inductor resonate at the center frequency of the RF power amplifier's operating frequency band, and the second resonant capacitor and the second supply inductor resonate at the center frequency of the RF power amplifier's operating frequency band. Therefore, the impedance of the fundamental wave signal of the RF power amplifier does not change after passing through the first resonant capacitor and the first supply inductor, nor does it change after passing through the second resonant capacitor and the second supply inductor. The impedance of the fundamental wave signal does not change due to the connection of the first resonant capacitor and the first supply inductor, the second resonant capacitor and the second supply inductor. Thus, while achieving overvoltage protection and harmonic suppression, the impedance matching and high efficiency requirements of the RF power amplifier are still guaranteed.

[0152] This embodiment also provides a radio frequency power amplifier chip, such as Figure 9 As shown, it includes a bare core 100, a first amplifying transistor 10, a second amplifying transistor 20, a capacitor network circuit and a power synthesis circuit 30 arranged on the bare core 100, the matching circuit includes a first capacitor C11, a second capacitor C12 and a capacitor unit C13, the output end of the first amplifying transistor is connected to the first input end of the power synthesis circuit through the first capacitor, the output end of the second amplifying transistor is connected to the second input end of the power synthesis circuit through the second capacitor, one end of the capacitor unit is connected to the first input end of the power synthesis circuit, and the other end of the capacitor unit is connected to the second input end of the power synthesis circuit, wherein the total capacitance value of the capacitor unit is less than the capacitance value of the first capacitor, and the total capacitance value of the capacitor unit is less than the capacitance value of the second capacitor.

[0153] In at least one embodiment, the bare die may be a chip using any process type, such as gallium arsenide (GaAs), gallium nitride, or CMOS.

[0154] It should be noted that the specific implementation methods and functions of the first amplifying transistor, the second amplifying transistor, the first capacitor, the second capacitor, the capacitor unit, the power synthesis circuit, the first power supply end and the second power supply end in this embodiment are the same as those in the above embodiment and are not redundantly described here.

[0155] In this embodiment, by connecting a capacitor network circuit formed by a combination of a first capacitor, a second capacitor, and a capacitor unit between the first and second amplifying transistors and the power combining circuit, and integrating the first and second capacitors, the capacitor unit, and the power combining circuit on a chip, a higher Q value and efficiency can be achieved compared to the related art method of connecting a matching circuit composed of capacitors and inductors between the first and second amplifying transistors and the power combining circuit, and winding the capacitors and inductors on the chip. In addition, by integrating the power combining circuit on the chip, this embodiment also saves substrate space.

[0156] This embodiment also provides a radio frequency front-end module, such as Figure 10 As shown, it includes a substrate 200, a bare core 100 and a power synthesis circuit 30 arranged on the substrate 200, the bare core 100 includes a first amplifying transistor 10, a second amplifying transistor 10 and a capacitor network circuit; the capacitor network circuit includes a first capacitor C11, a second capacitor C12 and a capacitor unit C13, the output end of the first amplifying transistor is connected to the first input end of the power synthesis circuit through the first capacitor, the output end of the second amplifying transistor is connected to the second input end of the power synthesis circuit through the second capacitor, one end of the capacitor unit is connected to the first input end of the power synthesis circuit, and the other end of the capacitor unit is connected to the second input end of the power synthesis circuit, wherein the total capacitance value of the capacitor unit is less than the capacitance value of the first capacitor, and the total capacitance value of the capacitor unit is less than the capacitance value of the second capacitor.

[0157] It should be noted that the specific implementation methods and functions of the bare core, first amplifying transistor, second amplifying transistor, first capacitor, second capacitor, capacitor unit, power synthesis circuit, first power supply end and second power supply end in this embodiment are the same as those in the above embodiment and will not be redundantly described here.

[0158] In this embodiment, a capacitor network circuit formed by a combination of a first capacitor, a second capacitor, and a capacitor unit is connected between the first and second amplifying transistors and the power combining circuit; the first capacitor, the second capacitor, and the capacitor unit are integrated on the chip, and the power combining circuit is disposed on the substrate. Compared to the related art method of connecting a matching circuit composed of capacitors and inductors between the first and second amplifying transistors and the power combining circuit, and winding the capacitors and inductors on the chip, a higher Q value and efficiency can be achieved. In addition, by arranging the power combining circuit on the substrate, this embodiment allows for more flexible layout and adjustment of the power combining circuit due to the relatively large area of the substrate.

[0159] The foregoing is merely a list of specific embodiments of the present application, intended to enable those skilled in the art to understand or implement the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application is not limited to the embodiments shown herein, but is intended to conform to the broadest scope consistent with the principles and novel features of the present application.

Claims

1. A radio frequency power amplifier, characterized in that: The invention comprises a first amplifying transistor, a second amplifying transistor, a capacitor network circuit and a power synthesis circuit, wherein the capacitor network circuit comprises a first capacitor, a second capacitor and a capacitor unit, wherein the output end of the first amplifying transistor is connected to the first input end of the power synthesis circuit through the first capacitor, the output end of the second amplifying transistor is connected to the second input end of the power synthesis circuit through the second capacitor, one end of the capacitor unit is connected to the first input end of the power synthesis circuit, and the other end of the capacitor unit is connected to the second input end of the power synthesis circuit, wherein the total capacitance value of the capacitor unit is less than the capacitance value of the first capacitor, and the total capacitance value of the capacitor unit is less than the capacitance value of the second capacitor.

2. The radio frequency power amplifier according to claim 1, wherein: The difference between the total capacitance of the capacitor unit and the capacitance of the first capacitor is A, wherein the range of A is within 60% to 90% of the capacitance of the first capacitor; The difference between the total capacitance of the capacitor unit and the capacitance of the second capacitor is B, where B is within a range from 60% to 90% of the capacitance of the second capacitor.

3. The radio frequency power amplifier according to claim 1, wherein: The capacitor unit includes a third capacitor, a first end of the third capacitor is connected to the first input end of the power synthesis circuit, and a second end of the third capacitor is connected to the second input end of the power synthesis circuit.

4. The radio frequency power amplifier according to claim 1, wherein: The capacitor unit includes a fourth capacitor and a fifth capacitor, the first end of the fourth capacitor is connected to the first input end of the power synthesis circuit, the second end of the fourth capacitor is grounded, the first end of the fifth capacitor is connected to the second input end of the power synthesis circuit, and the second end of the fifth capacitor is grounded.

5. The radio frequency power amplifier according to claim 1, wherein: The RF power amplifier also includes a first power supply terminal and a second power supply terminal, the first power supply terminal is configured to output a first power supply voltage to the first amplifying transistor, and the second power supply terminal is configured to output a second power supply voltage to the second amplifying transistor, wherein the first power supply voltage and the second power supply voltage are both greater than or equal to 4V.

6. The radio frequency power amplifier according to claim 4, wherein: The RF power amplifier further includes a first power supply inductor and a second power supply inductor. The first power supply end is connected to the first amplifying transistor output end through the first power supply inductor, and the second power supply end is connected to the second amplifying transistor output end through the second power supply inductor.

7. The radio frequency power amplifier according to claim 5, wherein: The RF power amplifier also includes a first harmonic processing circuit and a second harmonic processing circuit, wherein a first end of the first harmonic processing circuit is connected to the output end of the first amplifying transistor, and a second end of the first harmonic processing circuit is grounded; a first end of the second harmonic processing circuit is connected to the output end of the second amplifying transistor, and a second end of the second harmonic processing circuit is grounded, the first harmonic processing circuit includes a first resonant capacitor and a first resonant inductor connected in series, and the second harmonic processing circuit includes a second resonant capacitor and a second resonant inductor connected in series.

8. The radio frequency power amplifier according to claim 6, wherein: The first resonant capacitor and the first supply inductor are configured to resonate within the operating frequency band of the RF power amplifier, and the second resonant capacitor and the second supply inductor are configured to resonate within the operating frequency band of the RF power amplifier.

9. The radio frequency power amplifier according to claim 1, wherein: The RF power amplifier is configured to operate in a first frequency band, wherein the first frequency band is in the range of [2.4 GHz, 8 GHz], the total capacitance value of the capacitor unit is in the range of [0.3 pF, 1 pF], and the capacitance values of the first capacitor and the second capacitor are respectively in the range of [3 pF, 20 pF].

10. The radio frequency power amplifier according to claim 1, wherein: The RF power amplifier is configured to operate in a second frequency band, wherein the second frequency band is within the range of [5.125 GHz, 7.125 GHz], and the total capacitance value of the capacitor unit is within The capacitance values of the first capacitor and the second capacitor are respectively in the range of [0.5pF, 0.8pF].

11. The radio frequency power amplifier according to claim 1, wherein: The capacitor network circuit is configured such that the impedance of the output terminal of the first amplifying transistor and the impedance of the output terminal of the second amplifying transistor are greater than or equal to 8 ohms.

12. The radio frequency power amplifier according to claim 1, wherein: The capacitor network circuit is configured such that the real impedance of the output terminal of the first amplifying transistor and the real impedance of the output terminal of the second amplifying transistor are greater than the real impedance of the output terminal of the power combining circuit.

13. The radio frequency power amplifier according to claim 1, wherein: The power synthesis circuit includes a first balun, which includes a primary coupling line and a secondary coupling line coupled to each other, wherein the first end of the primary coupling line is connected to one end of the capacitor unit, the second end of the primary coupling line is connected to the other end of the capacitor unit, the first end of the secondary coupling line is connected to the signal output end, and the second end of the secondary coupling line is grounded.

14. The radio frequency power amplifier according to claim 11, wherein: The inductance ratio of the secondary coupling line to the primary coupling line is in the range of [1.1:1, 0.9:1].

15. The radio frequency power amplifier according to claim 11, wherein: The first routing path of the primary coupling line follows the second routing path of the primary coupling line, the first routing path is the routing path from the first end of the primary coupling line to the second end of the primary coupling line, and the second routing path is the routing path from the second end of the primary coupling line to the second end of the secondary coupling line.

16. The radio frequency power amplifier according to claim 13, wherein: The primary coupling line includes a first primary coupling line segment, a second primary coupling line segment, and a third primary coupling line segment connected in parallel; the secondary coupling line includes a first secondary coupling line segment and a second secondary coupling line segment connected in parallel, the first secondary coupling line segment is arranged between the first primary coupling line segment and the second primary coupling line segment, and the second secondary coupling line segment is arranged between the second primary coupling line segment and the third primary coupling line segment; Alternatively, the primary coupling line includes a first primary coupling line segment, a second primary coupling line segment, a third primary coupling line segment, and a fourth primary coupling line segment connected in parallel, and the secondary coupling line includes a first secondary coupling line segment, a second secondary coupling line segment, and a third secondary coupling line segment connected in parallel, the first secondary coupling line segment is arranged between the first primary coupling line segment and the second primary coupling line segment, and the second secondary coupling line segment is arranged between the second primary coupling line segment and the third primary coupling line segment; The third secondary coupling line segment is arranged between the third primary coupling line segment and the fourth primary coupling line segment.

17. The radio frequency power amplifier according to claim 1, wherein: The input end of the first amplifying transistor is configured to receive a first radio frequency signal, and the input end of the second amplifying transistor is configured to receive a second radio frequency signal. The first radio frequency signal and the second radio frequency signal are a pair of differential signals.

18. The radio frequency power amplifier according to claim 1, wherein: The RF power amplifier also includes an output matching circuit, which includes a third inductor and a sixth capacitor. The first end of the third inductor is connected to the output end of the power synthesis circuit, the second end of the third inductor is connected to the signal output end, the first end of the sixth capacitor is connected to the second end of the third inductor, and the second end of the sixth capacitor is grounded.

19. A radio frequency power amplifier, characterized in that: The invention comprises a first amplifying transistor, a second amplifying transistor, a first capacitor, a second capacitor, a capacitor unit, a power synthesis circuit, a first power supply terminal and a second power supply terminal, wherein the output terminal of the first amplifying transistor is connected to the first input terminal of the power synthesis circuit through the first capacitor, and the output terminal of the second amplifying transistor is connected to the second input terminal of the power synthesis circuit through the second capacitor, one end of the capacitor unit is connected to the first input terminal of the power synthesis circuit, and the other end of the capacitor unit is connected to the second input terminal of the power synthesis circuit, the output terminal of the power synthesis circuit is connected to the signal output terminal, the first power supply terminal is configured to output a first power supply voltage to the first amplifying transistor, and the second power supply terminal is configured to output a second power supply voltage to the second amplifying transistor, wherein both the first power supply voltage and the second power supply voltage are greater than or equal to 4V.

20. The radio frequency power amplifier according to claim 19, wherein: The total capacitance value of the capacitor unit is smaller than the capacitance value of the first capacitor, and the total capacitance value of the capacitor unit is smaller than the capacitance value of the second capacitor.

21. The radio frequency power amplifier according to claim 19, wherein: The RF power amplifier further includes a first power supply inductor and a second power supply inductor. The first power supply end is connected to the first amplifying transistor output end through the first power supply inductor, and the second power supply end is connected to the second amplifying transistor output end through the second power supply inductor.

22. The radio frequency power amplifier according to claim 20, wherein: The RF power amplifier also includes a first harmonic processing circuit and a second harmonic processing circuit. The first end of the first harmonic processing circuit is connected to the output end of the first amplifying transistor, and the second end of the first harmonic processing circuit is grounded; the first end of the second harmonic processing circuit is connected to the output end of the second amplifying transistor, and the second end of the second harmonic processing circuit is grounded. The first harmonic processing circuit includes a first resonant capacitor, and the second harmonic processing circuit includes a second resonant capacitor. The first resonant capacitor and the first power supply inductor are configured to resonate within the operating frequency band of the RF power amplifier, and the second resonant capacitor and the second power supply inductor are configured to resonate within the operating frequency band of the RF power amplifier.

23. A radio frequency power amplifier chip, characterized in that: It includes a bare core, a first amplifying transistor, a second amplifying transistor, a capacitor network circuit and a power synthesis circuit arranged on the bare core, the matching circuit includes a first capacitor, a second capacitor and a capacitor unit, the output end of the first amplifying transistor is connected to the first input end of the power synthesis circuit through the first capacitor, the output end of the second amplifying transistor is connected to the second input end of the power synthesis circuit through the second capacitor, one end of the capacitor unit is connected to the first input end of the power synthesis circuit, and the other end of the capacitor unit is connected to the second input end of the power synthesis circuit, wherein the total capacitance value of the capacitor unit is less than the capacitance value of the first capacitor, and the total capacitance value of the capacitor unit is less than the capacitance value of the second capacitor.

24. The radio frequency power amplifier chip according to claim 23, wherein the radio frequency power amplifier is configured to operate in a second frequency band, The second frequency band is in the range of [5.125 GHz, 7.125 GHz], the total capacitance value of the capacitor unit is in the range of [0.5 pF, 0.8 pF], and the capacitance values of the first capacitor and the second capacitor are respectively in the range of [3 pF, 6 pF].

25. A radio frequency front-end module, characterized in that: It includes a substrate, a bare core and a power synthesis circuit arranged on the substrate, the bare core includes a first amplifying transistor, a second amplifying transistor and a capacitor network circuit; the capacitor network circuit includes a first capacitor, a second capacitor and a capacitor unit, the output end of the first amplifying transistor is connected to the first input end of the power synthesis circuit through the first capacitor, the output end of the second amplifying transistor is connected to the second input end of the power synthesis circuit through the second capacitor, one end of the capacitor unit is connected to the first input end of the power synthesis circuit, and the other end of the capacitor unit is connected to the second input end of the power synthesis circuit, wherein the total capacitance value of the capacitor unit is less than the capacitance value of the first capacitor, and the total capacitance value of the capacitor unit is less than the capacitance value of the second capacitor.

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