Silicon carbide stripping method and silicon carbide stripping device

Abstract

The invention provides a silicon carbide stripping method and a silicon carbide stripping device, and relates to the technical field of silicon carbide processing. The silicon carbide stripping method is used for stripping a silicon carbide semi-finished product, the silicon carbide semi-finished product comprises a modified layer, a first main body part and a second main body part, the first main body part and the second main body part are located on the two sides of the modified layer in the thickness direction, and the silicon carbide stripping method comprises the following steps that pulling force is continuously applied to the silicon carbide semi-finished product in the thickness direction of the modified layer, the silicon carbide semi-finished product enters a strain state, and in the strain state, the modified layer has preset tensile deformation in the thickness direction of the modified layer; and when the modified layer is in a strain state, continuously applying tension to the silicon carbide semi-finished product, and simultaneously applying ultrasonic waves to the silicon carbide semi-finished product. According to the silicon carbide stripping method and device provided by the embodiment of the invention, the utilization rate of the silicon carbide material can be improved while the separation efficiency of the silicon carbide is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon carbide processing, and in particular to a silicon carbide stripping method and a silicon carbide stripping device. Background Art

[0002] Among the related technologies, some technologies first use laser technology to modify the silicon carbide ingot, and then produce a modified layer in the silicon carbide ingot through the modification, and then use ultrasonic waves to shatter the modified layer or directly apply force along the thickness direction of the modified layer to split the silicon carbide ingot at the modified layer, thereby realizing the separation of the silicon carbide ingot.

[0003] However, ultrasonic processing still requires a long time to apply vibrations, while direct force application can easily damage the silicon carbide ingot beyond the modified layer, affecting the utilization rate of the silicon carbide material. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention provides a silicon carbide stripping method that can improve the separation efficiency of silicon carbide while increasing the utilization rate of silicon carbide materials.

[0005] The present invention also provides a silicon carbide stripping device for implementing the above-mentioned silicon carbide stripping method.

[0006] According to a first aspect of an embodiment of the present invention, a silicon carbide stripping method is used to strip a silicon carbide semi-finished product, wherein the silicon carbide semi-finished product includes a modified layer, and a first main body portion and a second main body portion located on both sides of the modified layer in a thickness direction. The silicon carbide stripping method includes the following steps: Continuously applying a tensile force to the silicon carbide semi-finished product along the thickness direction of the modified layer, so that the silicon carbide semi-finished product enters a strained state, in which the modified layer has a preset tensile deformation in the thickness direction of the modified layer; When the modified layer is in the strained state, the tensile force continues to be applied to the silicon carbide semi-finished product, and ultrasonic waves are applied to the silicon carbide semi-finished product at the same time.

[0007] The silicon carbide stripping method according to an embodiment of the present invention has at least the following beneficial effects: when a tensile force is applied to the silicon carbide semi-finished product to cause it to enter a strained state, the modified layer has a preset tensile deformation in its thickness direction, a high stress concentration area is generated within the modified layer, and the fatigue resistance of the modified layer is reduced. Applying ultrasound to the silicon carbide semi-finished product can further adjust the stress distribution of the modified layer within the silicon carbide semi-finished product, and the high-frequency vibration of the ultrasound can affect the stress level in the high stress concentration area. Based on the magnitude of the tensile force applied to the silicon carbide semi-finished product, the stress level in the high stress concentration area changes cyclically within fixed upper and lower limits, causing cracks in the high stress concentration area to rapidly expand, separating the first and second main body parts. The above solution avoids direct tensile damage to the first and second main body parts, improves material utilization, and can also accelerate the separation process of the first and second modified layers, improving separation efficiency.

[0008] According to some embodiments of the present invention, when the ultrasonic wave is applied to the silicon carbide semi-finished product, the amplitude of the ultrasonic wave in the thickness direction of the modified layer is smaller than the tensile deformation amount.

[0009] According to some embodiments of the present invention, when applying tension to the silicon carbide semi-finished product, the first main body is fixed, and a tensioning assembly is used to apply tension to the second main body away from the first main body.

[0010] According to some embodiments of the present invention, an ultrasonic head is installed on the stretching assembly, and when the ultrasonic wave is applied to the silicon carbide semi-finished product, the ultrasonic head simultaneously applies tension and ultrasonic wave to the second main body.

[0011] According to some embodiments of the present invention, the first main body has a first contact surface, and the first contact surface is arranged away from the modified layer; when the first main body is fixed, the first contact surface is bonded to the first working plane by an adhesive; The second main body has a second contact surface, which is arranged away from the modified layer; when the stretching component is used to apply a pulling force away from the first main body to the second main body, the second contact surface is bonded to the second working plane by an adhesive, and the stretching component drives the second working plane away from the first working plane.

[0012] According to some embodiments of the present invention, the step of bonding the second contact surface to the second working plane by an adhesive includes: When the distance between the second working plane and the second contact surface is H, controlling the second working plane to approach the second contact surface along the thickness direction of the modified layer until the second working plane moves to the first position and contacts the second contact surface; controlling the second working plane to be away from the second contact surface, and providing an adhesive on the second working plane or the second contact surface; Controlling the second working plane to approach the second contact surface at a first feed speed along the thickness direction of the modified layer until the second working plane moves to a second position; the distance between the first position and the second position is 0.05H to 0.15H; controlling the second working plane to continue approaching the second contact surface from the second position at a second feed speed along the thickness direction of the modified layer until the adhesive contacts the second working plane and the second contact surface respectively; the first feed speed is greater than the second feed speed; After the adhesive is cured, the second working plane is controlled to move along the thickness direction of the modified layer away from the second contact surface, and a tensile force is applied to the silicon carbide semi-finished product.

[0013] According to some embodiments of the present invention, the second feeding speed is 0.05 to 0.15 times the first feeding speed; and / or, during the process in which the adhesive contacts the second working plane and the second contact surface simultaneously, the second working plane is capable of floating along the thickness direction of the modified layer; and / or, H is 0.9 mm to 1.1 mm; And / or, the first feeding speed is 90 μm / s to 110 μm / s.

[0014] According to a second aspect of an embodiment of the present invention, a silicon carbide stripping device is provided, which is used to implement the silicon carbide stripping method according to any one of the above embodiments, comprising: A fixing assembly, used for fixing the silicon carbide semi-finished product; a stretching assembly configured to continuously apply a tensile force to the silicon carbide semi-finished product after the fixing assembly fixes the silicon carbide semi-finished product; An ultrasonic component is configured to apply ultrasonic waves to the silicon carbide semi-finished product after the tensile component continuously applies tension to the silicon carbide semi-finished product for a period of time.

[0015] The silicon carbide stripping device according to the embodiment of the present invention has at least the following beneficial effects: the silicon carbide stripping device of the present invention can process the silicon carbide semi-finished product through a fixing component, a stretching component and an ultrasonic component, and apply ultrasonic waves to the silicon carbide semi-finished product when the silicon carbide semi-finished product is in a strained state, thereby making the stripping efficiency of the silicon carbide semi-finished product higher and the material utilization rate of the silicon carbide semi-finished product higher.

[0016] According to some embodiments of the present invention, the fixing assembly includes a workbench, which is used to fix the first main body; the stretching assembly includes a driving member; the ultrasonic assembly includes an ultrasonic head, which is used to apply ultrasonic waves to the silicon carbide semi-finished product; the ultrasonic head is connected to the driving member; the ultrasonic head can be connected to the second main body, and is driven by the driving member to drive the second main body away from the workbench along the thickness direction of the modified layer.

[0017] According to some embodiments of the present invention, the silicon carbide peeling device also includes a base and an elastic member, the base is located on the side of the workbench facing away from the stretching assembly, the two ends of the elastic member are respectively connected to the base and the workbench, and the elastic member can be elastically deformed along the thickness direction of the modified layer.

[0018] Additional aspects and advantages of the present invention will be set forth in part in the description which follows and, in part, will be obvious from the description which follows, or may be learned by practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The present invention will be further described below with reference to the accompanying drawings and embodiments, in which: Figure 1 Schematic diagram of the steps of the silicon carbide stripping method according to some embodiments of the first aspect of the present invention; Figure 2 Schematic diagram of a silicon carbide stripping device stripping a silicon carbide semi-finished product according to some embodiments of the second aspect of the present invention; Figure 3 for Figure 2 A partial enlarged view shown in FIG. Figure 4 Schematic diagram of the steps of the silicon carbide stripping method according to some embodiments of the third aspect of the present invention; Figure 5 Schematic diagram of using an ultrasonic vibration table to peel off a silicon carbide semi-finished product in the prior art.

[0020] Reference numerals: Ultrasonic vibration table 10; Silicon carbide semi-finished product 100, modified layer 110, first main body 120, first contact surface 130, second main body 140, second contact surface 150; Fixed assembly 200, workbench 210; Tensile component 300, driving member 310; Ultrasonic component 400, ultrasonic head 410; First working plane 500; Second working plane 600; Adhesive 700; Abutment 800; Elastic member 900; Slider 1000. DETAILED DESCRIPTION

[0021] The following describes embodiments of the present invention in detail. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended only to explain the present invention and are not to be construed as limiting the present invention.

[0022] In the description of the present invention, it should be understood that descriptions involving orientations, such as up, down, front, back, left, right, etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as limitations on the present invention.

[0023] In the description of the present invention, "several" means more than one, "plurality" means more than two, "greater than," "less than," and "exceed" are understood to exclude the number itself, while "above," "below," and "within" are understood to include the number itself. The use of "first" and "second" in the description is solely for the purpose of distinguishing technical features and should not be construed as indicating or implying relative importance, implicitly specifying the number of the indicated technical features, or implicitly specifying the order of the indicated technical features.

[0024] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, and connecting should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0025] In the description of the present invention, reference to terms such as "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the exemplary expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0026] Please refer to Figure 1 As shown, the present invention provides a method for stripping silicon carbide. The method is used to strip a silicon carbide semi-finished product 100. The silicon carbide semi-finished product 100 includes a modified layer 110, and a first main body 120 and a second main body 140 located on both sides of the modified layer 110 in the thickness direction.

[0027] The modified layer 110 is a structure formed after a specific area of the silicon carbide ingot is processed by laser technology. The modified layer 110 has cracks that are conducive to peeling. In the prior art, ultrasonic waves or direct force methods are often used to separate the silicon carbide semi-finished product 100 from the modified layer 110 into two parts. When using ultrasonic waves to peel the silicon carbide semi-finished product 100, the ultrasonic waves will drive the internal vibration of the modified layer 110, and the different parts of the modified layer 110 will produce reciprocating motion, thereby causing the cracks between the different parts of the modified layer 110 to slowly expand until multiple connected cracks completely separate the silicon carbide. When using direct force to peel the silicon carbide semi-finished product 100, the first main body 120 and the second main body 140 move away from each other, causing the modified layer 110 to break under the tensile effect.

[0028] The inventors have discovered through practice that the method of stripping the silicon carbide semi-finished product 100 solely using ultrasound actually applies cyclic loads to the modified layer 110 through ultrasound, causing fatigue failure within the modified layer 110, thereby separating the first body portion 120 and the second body portion 140. Using ultrasound to apply cyclic loads requires a long vibration time.

[0029] The method of simply using stretching to separate the silicon carbide semi-finished product 100 is actually equivalent to directly applying a tensile force exceeding the tensile strength of silicon carbide through an external device, thereby causing the silicon carbide semi-finished product 100 to fracture. Although directly applying force to break the silicon carbide semi-finished product 100 can significantly reduce the time required to separate the silicon carbide semi-finished product 100, due to the high tensile force and the high brittleness of the silicon carbide material, the first body 120 and the second body 140 are also easily damaged during the tensile process. This, in turn, requires more material to be removed from the two separated parts, resulting in a higher processing loss rate.

[0030] Some techniques also involve first using an ultrasonic vibration table 10 to expand cracks in the modified layer 110, then removing the ultrasonic wave, and finally transferring the treated silicon carbide semi-finished product 100 to an external device, which then cracks the silicon carbide semi-finished product 100. This approach only reduces the strength of the modified silicon carbide layer 110 through ultrasonic waves. Essentially, a tensile force exceeding the tensile strength of the modified layer 110 is still required to separate the silicon carbide semi-finished product 100, resulting in a high processing loss rate. In view of this, please refer to Figure 1 As shown, the silicon carbide stripping method of the present invention includes the following steps: S101: Continuously applying tension to the silicon carbide semi-finished product 100 along the thickness direction of the modified layer 110 to put the silicon carbide semi-finished product 100 into a strained state. In the strained state, the modified layer 110 has a preset tensile deformation in the thickness direction of the modified layer 110.

[0031] S102: When the modified layer 110 is in a strained state, continue to apply tension to the silicon carbide semi-finished product 100, and simultaneously apply ultrasonic waves to the silicon carbide semi-finished product 100.

[0032] When tensile force is continuously applied to the silicon carbide semi-finished product 100 along the thickness direction of the modified layer 110, the modified layer 110 is also subjected to tensile force along its own thickness direction, thereby causing deformation. When the silicon carbide semi-finished product 100 is in a strained state, the modified layer 110 has a predetermined tensile deformation along its own thickness direction. This causes cracks within the modified layer 110 to expand, and the cross-sectional area of the modified layer 110 perpendicular to its thickness direction decreases. This results in greater stress within the modified layer 110 of the silicon carbide semi-finished product 100, creating a high stress concentration area within the modified layer 110.

[0033] While the modified layer 110 is in a strained state, tension continues to be applied to the silicon carbide semi-finished product 100, and ultrasonic waves are simultaneously applied to the silicon carbide semi-finished product 100. The high-frequency vibrations of the ultrasonic waves can further affect the stress level in the high stress concentration area, further adjusting the stress distribution of the modified layer 110 within the silicon carbide semi-finished product 100. Based on the tension applied to the silicon carbide semi-finished product 100, the stress level in the high stress concentration area cyclically varies within fixed upper and lower limits. Cracks in the high stress concentration area will rapidly expand due to the stress changes, ultimately separating the first body portion 120 from the second body portion 140.

[0034] Compared with the solution of directly using ultrasound to separate the silicon carbide semi-finished product 100, the present invention further adjusts the structure of the modified layer 110 by pre-applying a tensile force along the thickness direction, thereby expanding the cracks in the modified layer 110, reducing the cross-sectional area of the modified layer 110 perpendicular to its own thickness direction, and causing the modified layer 110 to produce a certain degree of stress, so that after applying ultrasound, the internal stress can assist the ultrasound in expanding the cracks, accelerate the crack expansion speed, and ultimately improve the efficiency of separating the first main body 120 and the second main body 140.

[0035] Compared with the solution of directly applying force to separate the silicon carbide semi-finished product 100, the present invention separates the first main body 120 and the second main body 140 by ultrasonically expanding cracks, which can avoid damage to the structures of the first main body 120 and the second main body 140 during direct force separation, thereby improving material utilization.

[0036] It should be noted that when applying tension to the silicon carbide semi-finished product 100 using the silicon carbide stripping method of the present invention, direct force should be avoided to directly separate the first main body 120 and the second main body 140. Instead, the silicon carbide semi-finished product 100 should be kept in a tensile strain state by tension. Those skilled in the art can set the corresponding tension according to the cross-sectional area of the silicon carbide semi-finished product 100 perpendicular to the thickness direction of the modified layer 110 to be stripped. As a preferred embodiment, for cross-sections of different sizes perpendicular to the thickness direction of the modified layer 110, the ratio of the tension applied to the silicon carbide semi-finished product 100 to the above-mentioned cross-section is controlled within the range of 0.04 MPa to 0.1 MPa. Furthermore, the preferred ratio is 0.05 MPa, 0.06 MPa, 0.07 MPa, 0.08 MPa, 0.09 MPa, etc.

[0037] In some embodiments, while the modified layer 110 is in a strained state, a constant tensile force continues to be applied to the silicon carbide semi-finished product 100, and ultrasonic waves of a constant frequency and amplitude are simultaneously applied to the silicon carbide semi-finished product 100. The magnitude and direction of the constant tensile force are the same as the magnitude and direction of the tensile force applied alone when ultrasonic waves are not applied to the silicon carbide semi-finished product 100. Through the above method, those skilled in the art can pre-set the tensile force parameters and ultrasonic wave parameters based on the specifications of the silicon carbide semi-finished product 100 to facilitate the actual stripping operation.

[0038] Without departing from the inventive concept of the present invention, those skilled in the art may adjust the parameters of the tension and the ultrasonic wave. For example, those skilled in the art may change the magnitude of the tension to adjust the tensile deformation of the modified layer 110 .

[0039] As a preferred solution, in some embodiments, when applying ultrasound to the silicon carbide semi-finished product 100, the amplitude of the ultrasound in the thickness direction of the modified layer 110 is less than the tensile deformation. When the amplitude of the ultrasound in the thickness direction of the modified layer 110 is less than the tensile deformation, the deformation of a portion of the modified layer 110 in the thickness direction due to the ultrasound may exceed the deformation in the thickness direction due to the tensile deformation. This may result in the spacing between one portion of the modified layer 110 and another portion being too small, causing compression and irregular cracks. Irregular cracks can easily damage the structures of the first body portion 120 and the second body portion 140. Ensuring that the amplitude of the ultrasound in the thickness direction of the modified layer 110 is less than the tensile deformation helps increase the yield rate of the peeling process.

[0040] Without departing from the inventive concept of the present invention, the present invention does not limit the manner of applying the tensile force to the silicon carbide semi-finished product 100 .

[0041] In some embodiments, the modified layer 110 is directly fixed by an external device, and a tensile force is applied to the first main body 120 to move the first main body 120 away from the modified layer 110, thereby causing the modified layer 110 to deform in the thickness direction of the modified layer 110. The modified layer 110 is directly fixed by an external device, and a tensile force is applied to the second main body 140 to move the second main body 140 away from the modified layer 110, thereby causing the modified layer 110 to deform in the thickness direction of the modified layer 110.

[0042] In some embodiments, an external device is used to apply equal and opposite tensile forces to the first main body 120 and the second main body 140, and to move the first main body 120 and the second main body 140 away from each other to stretch the modified layer 110 to produce deformation in the thickness direction of the modified layer 110.

[0043] As a preferred option, please refer to Figure 2 、 Figure 3 As shown, in some embodiments, when applying tension to the silicon carbide semi-finished product 100, the first body portion 120 is fixed, and then the tensioning assembly 300 is used to apply tension to the second body portion 140 away from the first body portion 120. The above solution facilitates the fixing of the silicon carbide semi-finished product 100 and is convenient for those skilled in the art to operate.

[0044] The present invention does not limit the specific form of applying ultrasonic waves. In some embodiments, ultrasonic waves are applied using an ultrasonic water tank, which can transmit ultrasonic waves to the modified layer 110 through the liquid, thereby causing the modified layer 110 to vibrate, and cracks in the modified layer 110 can expand with the vibration.

[0045] As a preferred option, please refer to Figure 2 、 Figure 3As shown, in some embodiments, an ultrasonic head 410 is installed on the stretching assembly 300. When applying ultrasonic waves to the silicon carbide semi-finished product 100, the ultrasonic head 410 simultaneously applies tension and ultrasonic waves to the second body portion 140. Through the above solution, the ultrasonic head 410 will drive the second body portion 140 to vibrate when applying ultrasonic waves to the silicon carbide semi-finished product 100. Since the first body portion 120 is fixed, the tension applied by the ultrasonic head 410 to the second body portion 140 will change synchronously with the vibration of the ultrasonic waves. Therefore, the frequency of the ultrasonic waves applied to the second body portion 140 is the same as the vibration frequency of the ultrasonic head 410. The tension applied by the second body portion 140 to the modified layer 110 will also change synchronously with the frequency of the ultrasonic waves applied by the ultrasonic head 410, so that the deformation of the modified layer 110 will also change synchronously with the frequency of the ultrasonic waves applied by the ultrasonic head 410. The ultrasonic head 410 transmits ultrasonic waves directly to the second main body 140 , and the frequency of the reciprocating deformation of the second main body 140 is higher, which is beneficial to further accelerate the expansion of cracks in the modified layer 110 and further improve the stripping efficiency.

[0046] In some existing technologies, there is a solution of using an ultrasonic vibration table 10 to apply vibration to the silicon carbide semi-finished product 100. For details, please refer to Figure 5 As shown, Figure 5 This is a schematic diagram of the prior art method of using an ultrasonic vibration table 10 to peel a silicon carbide semi-finished product 100. The first body 120 is directly fixed to the vibration portion of the ultrasonic vibration table 10, while the second body 140 is a free end. The vibration portion of the ultrasonic vibration table 10 is capable of generating ultrasonic waves of a corresponding frequency. Because the second body 140 is free and unconstrained by external devices, when the first body 120 vibrates synchronously with the frequency of the ultrasonic waves applied by the vibration portion, the second body 140 will vibrate in response. The frequency of deformation of the modified layer 110 is reduced due to the simultaneous vibration of the first and second body parts 120, 140, and the crack propagation rate within the modified layer 110 is slowed.

[0047] In view of this, please refer to Figure 2 、 Figure 3As shown, in some embodiments, the second body 140 is fixed to the ultrasonic head 410, which vibrates at a preset frequency and amplitude along the thickness direction of the modified layer 110 to apply ultrasonic waves to the second body 140. Through this solution, the second body 140, fixed to the ultrasonic head 410, vibrates at the same frequency and amplitude as the ultrasonic head 410, causing the deformation of the modified layer 110 to change synchronously with the vibrations of the second body 140 and the ultrasonic head 410. Specifically, the deformation of the modified layer 110 during the vibration of the ultrasonic head 410 is the sum of the tensile deformation and the current amplitude of the ultrasonic head 410. Therefore, the deformation of the modified layer 110 also produces the same vibration as the ultrasonic head 410. The frequency of the deformation of the modified layer 110 is the same as the vibration frequency of the ultrasonic head 410, and the amplitude of the deformation of the modified layer 110 is the same as the amplitude of the ultrasonic head 410. The above embodiment makes the changing frequency and changing amplitude of the modified layer 110 the same as those of the ultrasonic head 410, which is equivalent to that the ultrasonic head 410 has a smaller loss in frequency and amplitude when applying ultrasonic waves to the modified layer 110, which is beneficial to further accelerate the expansion of cracks in the modified layer 110 and improve the stripping efficiency. It is also convenient for technical personnel in this field to confirm the effect produced by the modified layer 110 when it is acted upon by ultrasonic waves by adjusting the vibration parameters of the ultrasonic head 410 (vibration parameters include but are not limited to frequency, amplitude, etc.).

[0048] Based on the above solution, as a preferred embodiment, the amplitude of the ultrasonic head 410 along the thickness direction of the modified layer 110 is smaller than the tensile deformation of the modified layer 110. This embodiment can prevent the distance between the first body portion 120 and the second body portion 140 from being smaller than the initial thickness of the modified layer 110, thereby preventing the first body portion 120 and the second body portion 140 from squeezing the modified layer 110 and thus preventing the silicon carbide semi-finished product 100 from being crushed.

[0049] Without departing from the inventive concept of the present invention, the present invention does not limit the method of fixing the silicon carbide semi-finished product 100. In some embodiments, an external device fixes the first body portion 120 by clamping the first body portion 120 with a clamping jaw, and applies a tensile force to the second body portion 140 through the clamping jaw.

[0050] As a preferred option, please refer to Figure 3As shown, in some embodiments, the first body portion 120 has a first contact surface 130, which is disposed away from the modified layer 110. When the first body portion 120 is fixed, the first contact surface 130 is bonded to the first working plane 500 via an adhesive 700. The second body portion 140 has a second contact surface 150, which is disposed away from the modified layer 110. When a pulling force is applied to the second body portion 140 away from the first body portion 120 by the pulling assembly 300, the second contact surface 150 is bonded to the second working plane 600 via the adhesive 700, and the pulling assembly 300 drives the second working plane 600 away from the first working plane 500.

[0051] Because the first body portion 120 is bonded to the first working plane 500 via the first contact surface 130, and the second body portion 140 is bonded to the second working plane 600 via the second contact surface 150, when the tensile assembly 300 moves the second working plane 600 away from the first working plane 500, the adhesive 700 can apply a tensile force to the silicon carbide semi-finished product 100 along the thickness direction of the modified layer 110. The second body portion 140 is pulled away from the first body portion 120 by the adhesive applied to the second working plane 600, thereby causing the modified layer 110 to undergo tensile deformation along its thickness direction.

[0052] Compared to using clamps such as jaws or pliers to secure the silicon carbide semi-finished product 100, using adhesive 700 to secure the silicon carbide semi-finished product 100 effectively avoids squeezing the silicon carbide semi-finished product 100 during the peeling process, thereby improving stability during the peeling process. Furthermore, adhesive 700 provides a cushioning effect between the first body 120 and the first working plane 500, preventing collisions between the first body 120 and the first working plane 500. It also provides a cushioning effect between the second body 140 and the second working plane 600, preventing collisions between the second body 140 and the second working plane 600.

[0053] Those skilled in the art may place adhesive 700 between the contact surface and the working plane according to actual needs. For example, those skilled in the art may select multiple locations on the first contact surface 130 and the second contact surface 150 for dispensing, or may evenly apply adhesive 700 on the entire first contact surface 130 and the second contact surface 150.

[0054] For further information, please refer to Figure 4 As shown, in some embodiments, the step of bonding the second contact surface 150 to the second working plane 600 by the adhesive 700 includes: S201: When the distance between the second working plane 600 and the second contact surface 150 is H, control the second working plane 600 to approach the second contact surface 150 along the thickness direction of the modified layer 110 until the second working plane 600 moves to the first position and contacts the second contact surface 150.

[0055] S202 : Control the second working plane 600 to be away from the second contact surface 150 , and set an adhesive 700 on the second working plane 600 or the second contact surface 150 .

[0056] S203: Control the second working plane 600 to approach the second contact surface 150 at a first feed speed along the thickness direction of the modified layer 110 until the second working plane 600 moves to a second position. The distance between the first position and the second position is 0.05H-0.15H.

[0057] S204: Control the second working plane 600 to continue approaching the second contact surface 150 from the second position at a second feed speed along the thickness direction of the modified layer 110 until the adhesive 700 contacts the second working plane 600 and the second contact surface 150. The first feed speed is greater than the second feed speed.

[0058] S205: After the adhesive 700 is cured, the second working plane 600 is controlled to move along the thickness direction of the modified layer 110 away from the second contact surface 150, and a tensile force is applied to the silicon carbide semi-finished product 100.

[0059] In step S201, those skilled in the art can select various methods to control the distance between the second working plane 600 and the second contact surface to be H. By pre-establishing contact between the second working plane 600 and the second contact surface 150 in the thickness direction of the modified layer 110, the distance between the second working plane 600 and the first position when the distance from the second contact surface 150 is H can be determined. This facilitates subsequent precise adjustment of the distance the second working plane 600 needs to move, thereby reducing the risk of the second working plane 600 accidentally crushing the silicon carbide semi-finished product 100.

[0060] Specifically, after the adhesive 700 is applied to the second working plane 600 or the second contact surface 150, the adhesive 700 will occupy the space between the second working plane 600 and the second contact surface 150. If the second working plane 600 is moved back to the first position, the adhesive 700 between the second contact surface 150 and the second working plane 600 will severely squeeze the second main body 140, potentially breaking the silicon carbide semi-finished product 100. Therefore, in this embodiment, the stopping position of the second working plane 600 is controlled based on whether the adhesive 700 contacts the second working plane 600 and the second contact surface 150, respectively. This can reduce the pressure of the second working plane 600 on the second contact surface 150 by the adhesive 700, thereby reducing the risk of the second working plane 600 accidentally crushing the silicon carbide semi-finished product 100.

[0061] Furthermore, in this embodiment, after the adhesive 700 is placed on the second working plane 600 or the second contact surface 150, the second working plane 600 is controlled to move at a first feed speed along the thickness direction of the modified layer 110. After the second working plane 600 moves sufficiently close to the second contact surface 150 (i.e., after the second working plane 600 moves to the second position), the movement speed is adjusted to the second feed speed. Because the first feed speed is greater than the second feed speed, and the distance between the second position and the first position is 0.05H to 0.15H, when the thickness of the adhesive 700 is less than the distance between the second position and the first position, the second working plane 600 can move more efficiently toward the second position, thereby reducing the total duration of the peeling process and reducing the impact force on the second contact surface 150 when the second working plane 600 moves from the second position to the first position and contacts the adhesive 700.

[0062] In this embodiment, once the adhesive 700 contacts the second working plane 600 and the second contact surface 150 and solidifies, the bonding between the second working plane 600 and the second contact surface 150 is complete. A tensile force can be applied to the silicon carbide semi-finished product 100 by controlling the second working plane 600 to move along the thickness direction of the modified layer 110 away from the second contact surface 150.

[0063] The above steps set the adhesive 700 between the second contact surface 150 and the second working plane 600, which can reduce the collision and extrusion of the second working plane 600 with the silicon carbide semi-finished product 100 when bonding the second contact surface 150, reduce the risk of the silicon carbide semi-finished product 100 being crushed, and improve the yield of silicon carbide peeling.

[0064] It should be noted that those skilled in the art can set H in the above embodiment according to the equipment conditions, silicon carbide specifications, and other timing conditions. As a preferred embodiment, H is 0.9 mm to 1.1 mm, and can specifically be 0.92 mm, 0.95 mm, 0.98 mm, 1.02 mm, 1.06 mm, etc.

[0065] Those skilled in the art can adjust the first feed speed. As a preferred embodiment, the first feed speed is 90 μm / s to 110 μm / s, specifically 92 μm / s, 95 μm / s, 98 μm / s, 101 μm / s, 105 μm / s, 107 μm / s, etc.

[0066] Those skilled in the art can also adjust the relationship between the first feed speed and the second feed speed. As a preferred embodiment, the second feed speed is 0.05 to 0.15 times the first feed speed, and specifically can be 0.07 times, 0.09 times, 0.12 times, 0.14 times, etc.

[0067] For further information, please refer to Figure 4 As shown, in some embodiments, when the adhesive 700 is in contact with the second working plane 600 and the second contact surface 150 simultaneously, the second working plane 600 can float along the thickness direction of the modified layer 110. The second working plane 600 that can float along the thickness direction of the modified layer 110 can provide a buffering effect when in contact with the adhesive 700, reducing the impact force exerted by the second working plane 600 on the modified layer 110 through the adhesive 700, thereby improving the yield rate of silicon carbide peeling.

[0068] Without departing from the inventive concept of the present invention, those skilled in the art may freely select the material of the adhesive 700. As a preferred embodiment, when the first contact surface 130 is bonded to the first working plane 500 via the adhesive 700, the adhesive 700 is made of a material that loses its viscosity at temperatures between 60°C and 150°C, such as a hot melt adhesive, a heat-sensitive adhesive, an epoxy resin adhesive, or the like that meets the aforementioned requirements. The use of such an adhesive 700 facilitates direct heating and removal of the silicon carbide after the silicon carbide stripping process is completed, thereby simplifying the operation.

[0069] Please refer to Figures 1 to 4 As shown, the present invention provides a silicon carbide stripping device. The silicon carbide stripping device of the present invention is used to implement the silicon carbide stripping method as described in any of the above embodiments. The silicon carbide stripping device of the present invention includes a fixing component 200, a stretching component 300, and an ultrasonic component 400.

[0070] The fixing assembly 200 of the silicon carbide peeling device of the present invention is used to fix the silicon carbide semi-finished product 100. Without departing from the inventive concept of the present invention, the fixing assembly 200 of the present invention can be a clamp such as a clamp, a fixing pliers, etc., and the fixing assembly 200 directly clamps the silicon carbide semi-finished product 100 to achieve fixation. As a preferred embodiment, the fixing assembly 200 has a first working plane 500, and the first main body 120 has a first contact surface 130 disposed away from the modified layer 110. Those skilled in the art can apply an adhesive 700 to the first working plane 500 or the first contact surface 130 so that the first working plane 500 adheres to the first contact surface 130 to achieve fixation of the silicon carbide semi-finished product 100.

[0071] The tensile assembly 300 of the silicon carbide exfoliation apparatus of the present invention is configured to continuously apply a tensile force to the silicon carbide semi-finished product 100 after the fixing assembly 200 has fixed the silicon carbide semi-finished product 100. Upon application of the tensile force by the tensile assembly 300, the interior of the silicon carbide semi-finished product 100 fixed to the fixing assembly 200 will deform due to the combined action of the fixing assembly 200 and the tensile assembly 300, and the modified layer 110 will also deform accordingly. Those skilled in the art can adjust the tensile force provided by the tensile assembly 300 to cause the silicon carbide semi-finished product 100 to enter a strained state under the combined action of the tensile assembly 300 and the fixing assembly 200.

[0072] The ultrasonic assembly 400 of the present invention is configured to apply ultrasonic waves to the silicon carbide semi-finished product 100 after the tensile assembly 300 continuously applies tensile force to the silicon carbide semi-finished product 100 for a period of time. It should be understood that while the ultrasonic assembly 400 applies ultrasonic waves to the silicon carbide semi-finished product 100, the tensile assembly 300 continues to apply tensile force to the silicon carbide semi-finished product 100. As a result, the high stress concentration areas of the modified layer 110 can be continuously affected by the ultrasonic waves, causing the stress in the high stress concentration areas to cyclically vary within fixed upper and lower limits. Cracks in the high stress concentration areas will rapidly expand due to the stress changes, ultimately separating the first body portion 120 from the second body portion 140.

[0073] The silicon carbide stripping device of the present invention can process the silicon carbide semi-finished product 100 through the fixing component 200, the stretching component 300 and the ultrasonic component 400, so that the stripping efficiency of the silicon carbide semi-finished product 100 is higher and the material utilization rate of the silicon carbide semi-finished product 100 is also higher.

[0074] Without departing from the inventive concept of the present invention, the present invention does not impose any limitations on the structure of the ultrasonic assembly 400. In some embodiments, the ultrasonic assembly 400 includes a vibrating element and a vibration pool. The vibration pool is provided with a vibration cavity, and the vibrating element is disposed within the vibration cavity. The fixing assembly 200 is capable of securing the silicon carbide semi-finished product 100 within the vibration cavity. When the vibration cavity is filled with a liquid medium, the vibrating element can transmit ultrasonic waves to the silicon carbide semi-finished product 100 within the vibration cavity through vibration.

[0075] As a preferred option, please refer to Figure 2 、 Figure 3 As shown, in some embodiments, the fixing assembly 200 includes a workbench 210, which is used to fix the first main body 120, the stretching assembly 300 includes a driving member 310, and the ultrasonic assembly 400 includes an ultrasonic head 410, which is used to apply ultrasonic waves to the silicon carbide semi-finished product 100. The ultrasonic head 410 is connected to the driving member 310, and the ultrasonic head 410 can be connected to the second main body 140, and is driven by the driving member 310 to drive the second main body 140 away from the workbench 210 along the thickness direction of the modified layer 110.

[0076] Through the above solution, after being driven by the driving member 310, the ultrasonic head 410 can drive the second main body 140 away from the workbench 210 along the thickness direction of the modified layer 110, thereby applying a tensile force to the modified layer 110, stretching the modified layer 110. When applying ultrasonic waves, the ultrasonic head 410 drives the second main body 140 to vibrate together. Since the first main body 120 is fixed, the tensile force applied by the ultrasonic head 410 to the second main body 140 changes synchronously with the vibration of the ultrasonic waves. Therefore, the frequency of the ultrasonic waves applied to the second main body 140 is the same as the vibration frequency of the ultrasonic head 410. The tensile force applied by the second main body 140 to the modified layer 110 also changes synchronously with the frequency of the ultrasonic waves applied by the ultrasonic head 410, causing the deformation of the modified layer 110 to change synchronously with the frequency of the ultrasonic waves applied by the ultrasonic head 410. The ultrasonic head 410 transmits ultrasonic waves directly to the second main body 140 , and the frequency of the reciprocating deformation of the second main body 140 is higher, which is beneficial to further accelerate the expansion of cracks in the modified layer 110 and further improve the stripping efficiency.

[0077] As a preferred option, please refer to Figure 2 、 Figure 3As shown, in some embodiments, the silicon carbide stripping apparatus further includes a base 800 and an elastic member 900. The base 800 is located on the side of the workbench 210 facing away from the stretching assembly 300. The two ends of the elastic member 900 are respectively connected to the base 800 and the workbench 210. The elastic member 900 can elastically deform along the thickness direction of the modified layer 110. Through the above solution, under the premise that the workbench 210 is used to fix the first main body 120, when the ultrasonic head 410 is used to fix the second main body 140, the elastic member 900 can elastically deform along the thickness direction of the modified layer 110, thereby absorbing the impact of the ultrasonic head 410 on the second main body 140 when fixing the second main body 140, thereby reducing the impact on the modified layer 110, which is conducive to improving the yield rate of silicon carbide stripping.

[0078] For example, in some embodiments, the workbench 210 has a first working plane 500, the ultrasonic head 410 has a second working plane 600, the first main body 120 has a first contact surface 130 disposed away from the modified layer 110, and the second main body 140 has a second contact surface 150 disposed away from the modified layer 110. When the second main body 140 is fixed using the ultrasonic head 410, a person skilled in the art may pre-dispose an adhesive 700 on the second contact surface 150 or the second working plane 600. The ultrasonic head 410 approaches the second contact surface 150 along the thickness direction of the modified layer 110 and, together with the second main body 140, presses the adhesive 700 to activate the adhesive 700. During the above process, the elastic member 900 can absorb the impact force exerted on the silicon carbide semi-finished product 100 during the contact between the second working plane 600 and the adhesive 700, thereby reducing the possibility of the silicon carbide semi-finished product 100 being crushed by the ultrasonic head 410, thereby improving the yield rate of silicon carbide exfoliation.

[0079] In some embodiments, please refer to Figure 2 、 Figure 3 As shown, a slide bar 1000 extending along the thickness direction of the modified layer 110 can be provided between the workbench 210 and the base 800. The workbench 210 and the base 800 are connected by sliding along the thickness direction of the modified layer 110 via the slide bar 1000. This solution helps reduce the deflection of the workbench 210 relative to the base 800 when the elastic member 900 is impacted, thereby reducing the uneven force on the silicon carbide semi-finished product 100 and improving the stability of the silicon carbide peeling process.

[0080] In some embodiments, when ultrasonic waves are applied to the second main body 140 using the ultrasonic head 410 , the elastic member 900 can further amplify the deformation amplitude of the modified layer 110 during the vibration process, thereby increasing the rate of silicon carbide peeling.

[0081] While the embodiments of the present invention have been described in detail above with reference to the accompanying drawings, the present invention is not limited to the embodiments described above. Various modifications may be made within the scope of knowledge possessed by a person skilled in the art without departing from the spirit of the present invention. Furthermore, the embodiments of the present invention and the features thereof may be combined with one another unless there is a conflict.

Claims

1. A method for stripping a silicon carbide semi-finished product, wherein the silicon carbide semi-finished product comprises a modified layer, and a first main body and a second main body located on both sides of the modified layer in a thickness direction, wherein: The silicon carbide stripping method comprises the following steps: Continuously applying a tensile force to the silicon carbide semi-finished product along the thickness direction of the modified layer, so that the silicon carbide semi-finished product enters a strained state, in which the modified layer has a preset tensile deformation in the thickness direction of the modified layer; When the modified layer is in the strained state, the tensile force continues to be applied to the silicon carbide semi-finished product, and ultrasonic waves are applied to the silicon carbide semi-finished product at the same time.

2. The silicon carbide stripping method according to claim 1, wherein: When the ultrasonic waves are applied to the silicon carbide semi-finished product, the amplitude of the ultrasonic waves in the thickness direction of the reformed layer is smaller than the tensile deformation amount.

3. The silicon carbide stripping method according to claim 1, wherein: When applying tension to the silicon carbide semi-finished product, the first main body is fixed, and a tensioning assembly is used to apply tension to the second main body away from the first main body.

4. The silicon carbide stripping method according to claim 3, characterized in that: An ultrasonic head is installed on the stretching assembly, and when the ultrasonic wave is applied to the silicon carbide semi-finished product, the ultrasonic head simultaneously applies tension and ultrasonic wave to the second main body.

5. The silicon carbide stripping method according to claim 3, characterized in that: The first main body has a first contact surface, and the first contact surface is arranged away from the modified layer; when the first main body is fixed, the first contact surface is bonded to the first working plane by an adhesive; The second main body has a second contact surface, which is arranged away from the modified layer; when the stretching component is used to apply a pulling force away from the first main body to the second main body, the second contact surface is bonded to the second working plane by an adhesive, and the stretching component drives the second working plane away from the first working plane.

6. The silicon carbide stripping method according to claim 5, characterized in that: The step of bonding the second contact surface to the second working plane by means of an adhesive comprises: When the distance between the second working plane and the second contact surface is H, controlling the second working plane to approach the second contact surface along the thickness direction of the modified layer until the second working plane moves to the first position and contacts the second contact surface; controlling the second working plane to be away from the second contact surface, and providing an adhesive on the second working plane or the second contact surface; Controlling the second working plane to approach the second contact surface at a first feed speed along the thickness direction of the modified layer until the second working plane moves to a second position; the distance between the first position and the second position is 0.05H to 0.15H; controlling the second working plane to continue approaching the second contact surface from the second position at a second feed speed along the thickness direction of the modified layer until the adhesive contacts the second working plane and the second contact surface respectively; the first feed speed is greater than the second feed speed; After the adhesive is cured, the second working plane is controlled to move along the thickness direction of the modified layer away from the second contact surface, and a tensile force is applied to the silicon carbide semi-finished product.

7. The silicon carbide stripping method according to claim 6, characterized in that: The second feeding speed is 0.05 to 0.15 times the first feeding speed; and / or, during the process in which the adhesive contacts the second working plane and the second contact surface simultaneously, the second working plane is capable of floating along the thickness direction of the modified layer; and / or, H is 0.9 mm to 1.1 mm; And / or, the first feeding speed is 90 μm / s to 110 μm / s.

8. Silicon carbide stripping device, characterized in that, The silicon carbide stripping device is used to implement the silicon carbide stripping method according to any one of claims 1 to 7, comprising: A fixing assembly, used for fixing the silicon carbide semi-finished product; a stretching assembly configured to continuously apply a tensile force to the silicon carbide semi-finished product after the fixing assembly fixes the silicon carbide semi-finished product; An ultrasonic component is configured to apply ultrasonic waves to the silicon carbide semi-finished product after the tensile component continuously applies tension to the silicon carbide semi-finished product for a period of time.

9. The silicon carbide peeling device according to claim 8, characterized in that: The fixing assembly includes a workbench, which is used to fix the first main body. The stretching assembly includes a driving member. The ultrasonic assembly includes an ultrasonic head, which is used to apply ultrasonic waves to the silicon carbide semi-finished product. The ultrasonic head is connected to the driving member. The ultrasonic head can be connected to the second main body and is driven by the driving member to drive the second main body away from the workbench along the thickness direction of the modified layer.

10. The silicon carbide peeling device according to claim 9, characterized in that: The silicon carbide stripping device also includes a base and an elastic member. The base is located on the side of the workbench facing away from the stretching assembly. The two ends of the elastic member are respectively connected to the base and the workbench. The elastic member can be elastically deformed along the thickness direction of the modified layer.

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