Method, device and equipment for generating parameters of small-spacing horizontal well cluster well pattern and medium

Abstract

The application provides a small-spacing horizontal well cluster well pattern parameter generation method, device, equipment and medium, and relates to the horizontal well cluster well pattern development technical field. The method comprises the following steps: acquiring well cluster layout demand parameters and ranging tool parameters; determining the trajectory control tolerance of the top layer well in the vertical direction according to the well cluster layout demand parameters; determining the magnetic ranging error according to the ranging tool parameters; determining the well pattern well number according to the preset ranging error confidence factor, the preset well trajectory control error, the trajectory control tolerance, the magnetic ranging error and the well cluster layout demand parameters; determining the well pattern lateral offset according to the preset ranging error confidence factor, the magnetic ranging error, the preset well trajectory control error, the well pattern well number and the well cluster layout demand parameters; and performing well pattern layout processing according to the well pattern well number, the well pattern lateral offset and the well cluster layout demand parameters to determine the horizontal well cluster well pattern parameters. When the small-spacing horizontal well cluster well pattern is designed, the accuracy of determining the well pattern parameters is effectively improved by the above method.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of horizontal well cluster well pattern development, and particularly relates to a small-spacing horizontal well cluster well pattern parameter generation method, device, equipment and medium. BACKGROUND

[0002] At present, the proven geological reserves of medium and low mature shale oil are about 7.199 billion tons, and the effective utilization of medium and low mature shale oil is of great significance to energy security. The medium and low mature shale oil reservoirs generally have characteristics such as large burial depth, thin reservoir thickness and strong heterogeneity. In order to greatly improve the effective hydrocarbon generation volume of thin medium and low mature shale oil, a horizontal well cluster well pattern development scheme with deeper well depth, smaller well spacing and more well numbers is urgently needed.

[0003] In the prior art, the tested well type is relatively simple, the well depth is relatively shallow, the well number is relatively small, and the horizontal section well spacing is relatively large. When this technology is used to design a small-spacing horizontal well cluster well pattern, the accuracy of determining the well pattern parameters is low. SUMMARY

[0004] The present application provides a small-spacing horizontal well cluster well pattern parameter generation method, device, equipment and medium to solve the problem of low accuracy of determining well pattern parameters when the prior art is used to design a small-spacing horizontal well cluster well pattern.

[0005] In a first aspect, the present application provides a small-spacing horizontal well cluster well pattern parameter generation method, comprising:

[0006] obtaining well cluster layout requirement parameters and ranging tool parameters;

[0007] determining a trajectory control tolerance of a top layer well in a vertical direction according to the well cluster layout requirement parameters;

[0008] determining a magnetic ranging error according to the ranging tool parameters;

[0009] determining a well pattern well number according to a preset ranging error confidence factor, a preset well trajectory control error, the trajectory control tolerance, the magnetic ranging error and the well cluster layout requirement parameters;

[0010] determining a well pattern lateral offset according to the preset ranging error confidence factor, the magnetic ranging error, the preset well trajectory control error, the well pattern well number and the well cluster layout requirement parameters;

[0011] determining a well pattern lateral offset according to the preset ranging error confidence factor, the magnetic ranging error, the preset well trajectory control error, the well pattern well number and the well cluster layout requirement parameters;

[0012] determining a well pattern lateral offset according to the preset ranging error confidence factor, the magnetic ranging error, the preset well trajectory control error, the well pattern well number and the well cluster layout requirement parameters;

[0013] In one possible design, the well cluster layout requirements parameters include reservoir thickness, safe distance between the top or bottom well and the reservoir boundary, well spacing, number of well network layers, and three-dimensional well network form;

[0014] The step of determining the trajectory control tolerance of the top well in the vertical direction based on the well cluster layout requirement parameters includes:

[0015] The design distance from the top well to the bottom well is determined based on the number of well network layers, the well spacing, and the three-dimensional well network form.

[0016] The trajectory control tolerance of the top well in the vertical direction is determined based on the reservoir thickness, the design distance, and the safe distance between the top well or bottom well and the reservoir boundary.

[0017] In one possible design, the preset wellbore trajectory control error includes the wellbore trajectory vertical control error, and the magnetic ranging error includes the well spacing direction ranging error and the normal spacing error in the well spacing direction.

[0018] The step of determining the number of wells in the well network based on the preset ranging error confidence factor, the preset wellbore trajectory control error, the trajectory control tolerance, the magnetic ranging error, and the well cluster layout requirement parameters includes:

[0019] The number of bottom wells is determined based on the well spacing direction ranging error, the normal spacing error of the well spacing direction, the well trajectory vertical control error, the number of well network layers, the three-dimensional well network form, the preset ranging error confidence factor, and the trajectory control tolerance.

[0020] The number of wells in the well network is determined based on the number of bottom wells and the number of well network layers.

[0021] In one possible design, the formula for determining the number of bottom wells based on the well spacing direction ranging error, the normal spacing error of the well spacing direction, the vertical control error of the well trajectory, the number of well network layers, the three-dimensional well network form, the preset ranging error confidence factor, and the trajectory control tolerance is as follows:

[0022]

[0023] Wherein, n is the number of bottom wells, fix is ​​the floor function, and ΔH is the trajectory control...

[0024] Tolerance is set, where m is the number of well layers (m is an even number), k is a preset ranging error confidence factor, and max is a function for determining the maximum value. The distance measurement error in the well spacing direction is... It is in the form of a three-dimensional well network, the p represents the normal spacing error in the well spacing direction.v is a vertical control error of a wellbore trajectory;

[0025] The calculation formula for determining the number of well pattern wells according to the number of bottom layer wells and the number of well pattern layers is:

[0026]

[0027] wherein, the N is the number of well pattern wells, the m is the number of well pattern layers, the m is an even number, and the n is the number of bottom layer wells.

[0028] In a possible design, the preset wellbore trajectory control error further includes a horizontal control error of a wellbore trajectory, and the number of well pattern wells includes a number of bottom layer wells.

[0029] The determination of the well pattern lateral offset according to the preset ranging error confidence factor, the magnetic ranging error, the preset wellbore trajectory control error, the number of well pattern wells, and the well cluster layout requirement parameter includes:

[0030] The well pattern lateral offset is determined according to the number of bottom layer wells, the preset ranging error confidence factor, the interwell spacing direction ranging error, the normal spacing error in the interwell spacing direction, the horizontal control error of the wellbore trajectory, the number of well pattern layers, and the three-dimensional well pattern form.

[0031] In a possible design, the calculation formula for determining the well pattern lateral offset according to the number of bottom layer wells, the preset ranging error confidence factor, the interwell spacing direction ranging error, the normal spacing error in the interwell spacing direction, the horizontal control error of the wellbore trajectory, the number of well pattern layers, and the three-dimensional well pattern form is:

[0032]

[0033] wherein, the N is the well pattern lateral offset, the n is the number of bottom layer wells, the k is the preset ranging error confidence factor, the max is a maximum value function, the is the horizontal control error of the wellbore trajectory, the m is the number of well pattern layers, and the m is an even number. is the interwell spacing direction ranging error, the is the three-dimensional well pattern form, and the is the normal spacing error in the interwell spacing direction, and the p h is the horizontal control error of the wellbore trajectory, the m is the number of well pattern layers, and the m is an even number.

[0034] In a possible design, the number of well pattern wells is distributed in the form of an equilateral triangle well pattern on the reservoir thickness.

[0035] In a second aspect, the application provides a small-spacing horizontal well cluster well pattern parameter generation device, which comprises:

[0036] The parameter acquisition module is configured to acquire well cluster layout requirement parameters and ranging tool parameters.

[0037] The trajectory control tolerance acquisition module is configured to determine a trajectory control tolerance of the top-layer well in a vertical direction according to the well cluster layout requirement parameters.

[0038] The magnetic ranging error acquisition module is configured to determine a magnetic ranging error according to the ranging tool parameters.

[0039] The well pattern well number acquisition module is configured to determine a well pattern well number according to a preset ranging error confidence factor, a preset well trajectory control error, the trajectory control tolerance, the magnetic ranging error and the well cluster layout requirement parameters.

[0040] The well pattern lateral offset acquisition module is configured to determine a well pattern lateral offset according to the preset ranging error confidence factor, the magnetic ranging error, the preset well trajectory control error, the well pattern well number and the well cluster layout requirement parameters.

[0041] The horizontal well cluster well pattern parameter acquisition module is configured to perform well pattern layout processing according to the well pattern well number, the well pattern lateral offset and the well cluster layout requirement parameters, and determine a horizontal well cluster well pattern parameter.

[0042] In a third aspect, the present application provides an electronic device, comprising a processor and a memory connected with the processor in communication;

[0043] The memory stores computer execution instructions.

[0044] The processor executes the computer execution instructions stored in the memory to implement the small-spacing horizontal well cluster well pattern parameter generation method provided in the first aspect of the present application.

[0045] In a fourth aspect, the present application provides a computer readable storage medium, wherein the computer readable storage medium stores computer execution instructions, and the computer execution instructions are executed by a processor to implement the small-spacing horizontal well cluster well pattern parameter generation method provided in the first aspect of the present application.

[0046] In a fifth aspect, the present application provides a computer program product, comprising a computer program, and the computer program is executed by a processor to implement the small-spacing horizontal well cluster well pattern parameter generation method provided in the first aspect of the present application.

[0047] The application provides a small-spacing horizontal well cluster well pattern parameter generation method, device, equipment and medium. The small-spacing horizontal well cluster well pattern parameter generation method comprises the following steps: acquiring well cluster layout demand parameters and distance measuring tool parameters; determining a trajectory control tolerance of a top layer well in a vertical direction according to the well cluster layout demand parameters; determining a magnetic distance measuring error according to the distance measuring tool parameters; determining a well pattern well number according to a preset distance measuring error confidence factor, a preset well trajectory control error, the trajectory control tolerance, the magnetic distance measuring error and the well cluster layout demand parameters; determining a well pattern lateral offset according to the preset distance measuring error confidence factor, the magnetic distance measuring error, the preset well trajectory control error, the well pattern well number and the well cluster layout demand parameters; and performing well pattern layout processing according to the well pattern well number, the well pattern lateral offset and the well cluster layout demand parameters to determine a horizontal well cluster well pattern parameter. Based on the above method, the following technical effects are achieved: the magnetic distance measuring error is determined, the well trajectory is accurately analyzed, and the accuracy of determining the well pattern parameter can be effectively improved when designing a small-spacing horizontal well cluster well pattern.

[0048] The application provides a small-spacing horizontal well cluster well pattern parameter generation method, device, equipment and medium. The small-spacing horizontal well cluster well pattern parameter generation method comprises the following steps: acquiring well cluster layout demand parameters and distance measuring tool parameters; determining a trajectory control tolerance of a top layer well in a vertical direction according to the well cluster layout demand parameters; determining a magnetic distance measuring error according to the distance measuring tool parameters; determining a well pattern well number according to a preset distance measuring error confidence factor, a preset well trajectory control error, the trajectory control tolerance, the magnetic distance measuring error and the well cluster layout demand parameters; determining a well pattern lateral offset according to the preset distance measuring error confidence factor, the magnetic distance measuring error, the preset well trajectory control error, the well pattern well number and the well cluster layout demand parameters; and performing well pattern layout processing according to the well pattern well number, the well pattern lateral offset and the well cluster layout demand parameters to determine a horizontal well cluster well pattern parameter. Based on the above method, the following technical effects are achieved: the magnetic distance measuring error is determined, the well trajectory is accurately analyzed, and the accuracy of determining the well pattern parameter can be effectively improved when designing a small-spacing horizontal well cluster well pattern. BRIEF DESCRIPTION OF DRAWINGS

[0049] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description are some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without any creative effort based on these drawings.

[0050] Figure 1 A flowchart of a small-spacing horizontal well cluster well pattern parameter generation method provided by the embodiment of the present application Figure 1 ;

[0051] Figure 2 A flowchart of a small-spacing horizontal well cluster well pattern parameter generation method provided by the embodiment of the present application Figure 2 ;

[0052] Figure 3 A flowchart of a small-spacing horizontal well cluster well pattern parameter generation method provided by the embodiment of the present application Figure 3 ;

[0053] Figure 4 A relationship diagram of a well spacing direction distance measuring error and a bottom layer well number provided by the embodiment of the present application;

[0054] Figure 5 A relationship diagram of a well spacing direction distance measuring error and a well pattern well number provided by the embodiment of the present application;

[0055] Figure 6 A relationship diagram of a well spacing direction distance measuring error and a well pattern lateral offset provided by the embodiment of the present application;

[0056] Figure 7 A schematic diagram of the relationship between the normal spacing error in the well spacing direction and the number of bottom layer wells provided for an embodiment of the present application is shown in Figure 1;

[0057] Figure 8 A schematic diagram of the relationship between the normal spacing error in the well spacing direction and the number of well pattern wells provided for an embodiment of the present application is shown in Figure 2;

[0058] Figure 9 A schematic diagram of the relationship between the normal spacing error in the well spacing direction and the lateral offset of the well pattern provided for an embodiment of the present application is shown in Figure 3;

[0059]

[0060] Figure 10 A schematic diagram of the relationship between the vertical control error of the well trajectory and the number of bottom layer wells provided for an embodiment of the present application is shown in Figure 4;

[0061] Figure 11 A schematic diagram of the relationship between the vertical control error of the well trajectory and the number of well pattern wells provided for an embodiment of the present application is shown in Figure 5;

[0062] Figure 12 A schematic diagram of the relationship between the vertical control error of the well trajectory and the lateral offset of the well pattern provided for an embodiment of the present application is shown in Figure 6;

[0063] Figure 13 A schematic diagram of the relationship between the horizontal control error of the well trajectory and the number of bottom layer wells provided for an embodiment of the present application is shown in Figure 7;

[0064] Figure 14 A schematic diagram of the relationship between the horizontal control error of the well trajectory and the number of well pattern wells provided for an embodiment of the present application is shown in Figure 8;

[0065] Figure 15 A schematic diagram of the relationship between the horizontal control error of the well trajectory and the lateral offset of the well pattern provided for an embodiment of the present application is shown in Figure 9;

[0066] Figure 16 A schematic diagram of the structure of a small well spacing horizontal well cluster well pattern parameter generation device provided for an embodiment of the present application is shown in Figure 10;

[0067] Figure 17 A schematic diagram of the structure of an electronic device provided for an embodiment of the present application is shown in Figure 11.

[0068] BRIEF DESCRIPTION OF THE DRAWINGS

[0069] 601 - processor; 602 - memory; 603 - communication component; 604 - bus. DETAILED DESCRIPTION

[0070] ​The exemplary embodiments will be described in detail herein with reference to the attached drawings. The following description is made with reference to the accompanying drawings in which like reference numerals refer to like elements, unless the context of use indicates otherwise. The following description of exemplary embodiments is not representative of all embodiments consistent with the present application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of the present application as detailed in the appended claims, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of the present application.

[0071] In the embodiments of the present application, the terms "first", "second", and the like are used to distinguish between similar or identical items or elements with substantially the same function and effect. Those skilled in the art can understand that the terms "first", "second", and the like do not limit the quantity and execution order, and the terms "first", "second", and the like do not necessarily mean different. It should be noted that in the embodiments of the present application, the words "exemplary" or "for example" are used to indicate an example, illustration, or description. Any embodiment or design scheme described as "exemplary" or "for example" in the present application should not be interpreted as more preferred or more advantageous than other embodiments or design schemes. Rather, the words "exemplary" or "for example" are used to present the relevant concept in a specific manner. In the embodiments of the present application, "at least one" means one or more, and "multiple" means two or more.

[0072]

[0073] In order to clearly describe the technical solutions of the embodiments of the present application, the following briefly introduces some terms and technologies involved in the embodiments of the present application:

[0074] Well cluster layout requirement parameters: including reservoir thickness, safe distance of top or bottom well from reservoir boundary, well spacing, well pattern layer number, and three-dimensional well pattern form, which are parameters related to oil well development.

[0075] Ranging tool parameters: well spacing direction ranging error and normal spacing error in well spacing direction, which are performance parameters of the ranging tool.

[0076] In order to clearly understand the technical solutions of the present application, the prior art solutions will be described in detail.

[0077] In the prior art, the tested well type is relatively simple, the well depth is relatively shallow, the number of wells is relatively small, and the horizontal section well spacing is relatively large. Such technology has a low accuracy in determining well pattern layout parameters when designing a small well spacing horizontal well cluster well pattern.

[0078] ​To sum up, how to design a kind of can solve the prior art in the small spacing horizontal well cluster well pattern design, the accuracy of determining well pattern layout parameters is low, it is the problem that the present application urgently needs to solve.

[0079] Therefore, in view of the above technical problems existing in the prior art, the embodiment of the present application provides a small spacing horizontal well cluster well pattern parameter generation method, device, equipment and medium, which can be used in the field of horizontal well cluster well pattern development, and aims to effectively improve the accuracy of determining well pattern parameters when designing small spacing horizontal well cluster well pattern.

[0080] The application scenarios of the small spacing horizontal well cluster well pattern parameter generation method provided by the embodiment of the present application are introduced below. The following application scenarios are only examples, and the purpose is to help those skilled in the art to understand the technical content of the present application, but it does not mean that the embodiments of the present application cannot be used for other devices, systems, environments or scenarios.

[0081] In the well pattern design in shale gas development, the small spacing horizontal well cluster well pattern parameter generation method provided by the embodiment of the present application can realize higher well pattern density and more accurate well pattern parameter calculation according to geological conditions, reservoir properties, interwell distance and horizontal well length, thereby improving the exploitation efficiency of shale gas.

[0082] The well cluster well pattern parameter generation method can realize higher well pattern density and more accurate well pattern parameter calculation according to geological conditions, reservoir properties, interwell distance and horizontal well length, thereby improving the exploitation efficiency of shale gas.

[0083] The embodiments of the present application are introduced below in conjunction with the drawings of the specification.

[0084] The technical solutions of the present application and how the technical solutions of the present application solve the above technical problems are described in detail below with specific embodiments. The following specific embodiments can be combined with each other, and the same or similar concepts or processes can not be described in some embodiments. The embodiments of the present application will be described below in conjunction with the drawings.

[0085] Figure 1 The flowchart of the small spacing horizontal well cluster well pattern parameter generation method provided by the embodiment of the present application is shown in Figure 1 The embodiment provides a small spacing horizontal well cluster well pattern parameter generation method, which comprises the following steps:

[0086] S101, obtain well cluster layout requirement parameters and ranging tool parameters.

[0087] In the embodiment, the well cluster layout requirement parameters include reservoir thickness, safety distance of top well or bottom well from reservoir boundary, interwell spacing, well pattern layer number and three-dimensional well pattern form, and the ranging tool parameters include interwell spacing direction ranging error and normal spacing error in interwell spacing direction.

[0088] The reservoir thickness is inferred by using the pre-stack seismic inversion technology in combination with the Gassmann equation to establish the correlation between the reservoir physical property parameters such as porosity and saturation and the elastic parameters such as P-wave velocity and density; the safe distance of the top or bottom well from the reservoir boundary is calculated by the injection-production pressure gradient model according to the formation pressure, fluid properties and rock mechanics parameters; the liquid supply radius is calculated according to the parameters such as permeability and porosity, and the reasonable well spacing is determined in combination with the economic limit well spacing; the well pattern layer number and the three-dimensional well pattern form are determined by adopting the layered well arrangement according to the vertical heterogeneity of the reservoir. The reservoir thickness, the safe distance of the top or bottom well from the reservoir boundary, the well spacing, the well pattern layer number and the three-dimensional well pattern form can also be obtained by other ways, which are not specifically limited in the embodiment.

[0089] The shortest distance of the reference well and the adjacent well in a specific direction is calculated by using the normal plane distance scanning method or the horizontal plane distance scanning method, and then the ranging error in the well spacing direction is determined by using the deviation model and the deviation data such as the well depth, the well inclination angle and the azimuth angle. The short axis and the long axis radius of the normal error ellipsoid are obtained by projecting the three-dimensional error ellipsoid to the normal plane perpendicular to the well trajectory, for example, the normal spacing error in the well spacing direction is determined by using the error projection of the vertical plane and the horizontal plane perpendicular to the well trajectory. The ranging error in the well spacing direction and the normal spacing error in the well spacing direction can also be obtained by other ways, which are not specifically limited in the embodiment.

[0090] The embodiment does not specifically limit this.

[0091] In the embodiment, the edge well of the bottom layer is the first well, which is also the reference well; the position error of the standard well relative to the bottom boundary of the reservoir is ignored; the bottom well is built in the same direction in sequence.

[0092] S102, the trajectory control tolerance of the top well in the vertical direction is determined according to the well cluster layout requirement parameters.

[0093] In the embodiment, the tolerance model defining the maximum vertical distance of the trajectory deviating from the target horizon is constructed, and the real-time data inversion is performed after the dynamic error correction of the tolerance model, for example, the tolerance can be dynamically adjusted by using the production pressure difference and the water cut change. The tolerance model completed after the final adjustment can determine the trajectory control tolerance of the top well in the vertical direction.

[0094] S103, the magnetic ranging error is determined according to the ranging tool parameters.

[0095] In the embodiment, the magnetic ranging error refers to the ranging error in the well spacing direction and the normal spacing error in the well spacing direction, and the ranging tool parameters can be the basic parameters of the magnetic ranging tool.

[0096] The ranging error in the well spacing direction and the normal spacing error in the well spacing direction are calculated by comprehensively considering the trajectory control tolerance, the instrument fixing error and the proportional error and the like, and the specific calculation process needs to be combined with the error parameters of the instrument and the error propagation formula.

[0097] By determining the magnetic ranging error and accurately analyzing the well trajectory, the accuracy of determining the well pattern parameters can be effectively improved when designing the small well spacing horizontal well cluster well pattern.

[0098] In S104, the number of wells in the well pattern is determined according to the preset ranging error confidence factor, the preset well trajectory control error, the trajectory control tolerance, the magnetic ranging error and the well cluster layout requirement parameter. The number of wells in the well pattern can be realized by the model training, or can be realized by other ways, and the present embodiment does not make any specific limitation.

[0099] In the present embodiment, the number of wells in the well pattern is determined according to the preset ranging error confidence factor, the preset well trajectory control error, the trajectory control tolerance, the magnetic ranging error and the well cluster layout requirement parameter. The number of wells in the well pattern can be realized by the model training, or can be realized by other ways, and the present embodiment does not make any specific limitation.

[0100] In S105, the lateral offset of the well pattern is determined according to the preset ranging error confidence factor, the magnetic ranging error, the preset well trajectory control error, the number of wells in the well pattern and the well cluster layout requirement parameter.

[0101] In the present embodiment, the lateral offset of the well pattern is determined according to the preset ranging error confidence factor, the magnetic ranging error, the preset well trajectory control error, the number of wells in the well pattern and the well cluster layout requirement parameter. The lateral offset of the well pattern can be realized by the model training, or can be realized by other ways, and the present embodiment does not make any specific limitation.

[0102] In S106, the well pattern layout processing is performed according to the number of wells in the well pattern, the lateral offset of the well pattern and the well cluster layout requirement parameter, and the horizontal well cluster well pattern parameters are determined.

[0103]

[0104] In the present embodiment, the number of wells in the well pattern, the lateral offset of the well pattern and the well cluster layout requirement parameter are input into the existing three-dimensional well pattern model construction software to obtain a three-dimensional well pattern model. The three-dimensional well pattern model includes the specific distribution parameters from the bottom well to the top well, such as the number of bottom wells and the spacing between every two wells, the number of the second last layer of wells and the spacing between every two wells, and the spacing between the adjacent two layers in the vertical direction. The horizontal well cluster well pattern parameters can also be obtained by the tools, software and methods related to the well pattern layout design in shale oil and gas exploitation, and the present embodiment does not make any limitation.

[0105] ​The application provides a small-spacing horizontal well cluster well pattern parameter generation method, which comprises the following steps: obtaining well cluster layout requirement parameters and ranging tool parameters; determining a trajectory control tolerance of a top layer well in a vertical direction according to the well cluster layout requirement parameters; determining a magnetic ranging error according to the ranging tool parameters; determining a well pattern well number according to a preset ranging error confidence factor, a preset well trajectory control error, the trajectory control tolerance, the magnetic ranging error and the well cluster layout requirement parameters; determining a well pattern lateral offset according to the preset ranging error confidence factor, the magnetic ranging error, the preset well trajectory control error, the well pattern well number and the well cluster layout requirement parameters; and performing well pattern layout processing according to the well pattern well number, the well pattern lateral offset and the well cluster layout requirement parameters, and determining a horizontal well cluster well pattern parameter. Based on the above method, the following technical effects are achieved: the magnetic ranging error is determined, the well trajectory is accurately analyzed, and the accuracy of determining the well pattern parameter can be effectively improved when the small-spacing horizontal well cluster well pattern is designed.

[0106] Figure 2 A small-spacing horizontal well cluster well pattern parameter generation method provided by the embodiment of the application is shown in the flowchart Figure 2 On the basis of the above embodiment, the small-spacing horizontal well cluster well pattern parameter generation method is further explained in the embodiment. In the embodiment, the well cluster layout requirement parameters comprise a reservoir thickness, a safety distance of a top layer well or a bottom layer well from a reservoir boundary, an interwell spacing, a well pattern layer number and a three-dimensional well pattern form, and S102 comprises the following steps:

[0107] S201, determining a design distance of the top layer well to the bottom layer well according to the well pattern layer number, the interwell spacing and the three-dimensional well pattern form.

[0108] In the embodiment, the design distance of the top layer well to the bottom layer well is determined according to the well pattern layer number, the interwell spacing and the three-dimensional well pattern form, and the calculation formula of the design distance is as follows:

[0109]

[0110] D tw is the design distance of the top layer well to the bottom layer well, m is the well pattern layer number, m is an even number, w D is the interwell spacing,

[0111] and the three-dimensional well pattern form.

[0112] S202, determining a trajectory control tolerance of the top layer well in the vertical direction according to the reservoir thickness, the design distance and the safety distance of the top layer well or the bottom layer well from the reservoir boundary.

[0113] In the embodiment, the trajectory control tolerance of the top layer well in the vertical direction is determined according to the reservoir thickness, the design distance and the safety distance of the top layer well or the bottom layer well from the reservoir boundary, and the calculation formula of the trajectory control tolerance is as follows:

[0114]

[0115] wherein, is the trajectory control tolerance of the top well in the vertical direction, T is the reservoir thickness, D tw is the design distance from the top well to the bottom well, D s is the safety distance from the top well or the bottom well to the reservoir boundary.

[0116] A specific calculation formula for determining the trajectory control tolerance of the top well in the vertical direction is provided, which can improve efficiency and accuracy.

[0117] Figure 3 Flowchart of the small-spacing horizontal well cluster well pattern parameter generation method provided by the embodiment Figure 3 On the basis of the above embodiment, the small-spacing horizontal well cluster well pattern parameter generation method is further explained in this embodiment. In this embodiment, the preset well trajectory control error includes well trajectory vertical control error, the magnetic distance measurement error includes well spacing direction distance measurement error and well spacing direction normal distance error, and S104 includes:

[0118] S301, according to the well spacing direction distance measurement error, the well spacing direction normal distance error, the well trajectory vertical control error, the well pattern layer number, the three-dimensional well pattern form, the preset distance measurement error confidence factor and the trajectory control tolerance, the number of bottom wells is determined.

[0119] In this embodiment, the well spacing direction distance measurement error, the well spacing direction normal distance error and the well trajectory vertical control error are combined, the error range is adjusted by the preset distance measurement error confidence factor, and a bottom well number model is established. The well pattern layer number and the three-dimensional well pattern form are input into the bottom well number model, and the number of bottom wells is output. The determination of the number of bottom wells is realized by establishing the bottom well number model, which can improve the accuracy of data determination. The number of bottom wells can also be determined in other ways, which is not specifically limited in this embodiment.

[0120] S302, according to the number of bottom wells and the number of well pattern layers, the number of well pattern wells is determined.

[0121] In this embodiment, after the number of bottom wells and the number of well pattern layers are determined, the total area of well pattern and the well spacing are calculated, the number of wells of single layer well pattern is obtained through the total area of well pattern and the well spacing, and then the number of wells of each layer of well pattern is added to finally obtain the number of well pattern wells. The number of well pattern wells can also be determined in other ways, which is not specifically limited in this embodiment.

[0122] The number of wells of each layer of well pattern is added to finally obtain the number of well pattern wells. The number of well pattern wells can also be determined in other ways, which is not specifically limited in this embodiment.

[0123] On the basis of the above embodiment, the embodiment further explains the small-spacing horizontal well cluster well pattern parameter generation method. The small-spacing horizontal well cluster well pattern parameter generation method of the embodiment is as follows: in S301, the calculation formula is:

[0124]

[0125] wherein n is the number of bottom layer wells, fix is an integral function, AH is a trajectory control tolerance, m is the number of well patterns, k is a preset ranging error confidence factor, max is a maximum value function, is a ranging error in the well spacing direction, is a three-dimensional well pattern form, is a normal spacing error in the well spacing direction, p v is a wellbore trajectory vertical control error;

[0126] in S302, the calculation formula is:

[0127]

[0128] wherein N is the number of well pattern wells, m is the number of well patterns, and m is an even number, and n is the number of bottom layer wells.

[0129] A specific calculation formula for determining the number of bottom layer wells and the number of well pattern wells is provided, which can improve efficiency and accuracy.

[0130] In an optional embodiment of the application, the derivation process of the calculation formula for determining the number of bottom layer wells n is as follows:

[0131] Step a: according to the preset ranging error confidence factor and the ranging error in the well spacing direction, the actual ranging error in the well spacing direction of 2 wells relative to 1 well along the magnetic ranging direction from the bottom layer boundary is calculated, and the calculation formula is as follows:

[0132]

[0133] wherein e hr is the actual ranging error in the well spacing direction of 2 wells relative to 1 well along the magnetic ranging direction from the bottom layer boundary, k is the preset ranging error confidence factor, is the ranging error in the well spacing direction.

[0134] Step b: according to the wellbore trajectory vertical control error, the preset ranging error confidence factor and the ranging error in the well spacing direction, the final actual ranging error in the well spacing direction of 2 wells relative to 1 well along the magnetic ranging direction from the bottom layer boundary is calculated, and the calculation formula is as follows:

[0135]

[0136] wherein e hpis the final actual interwell spacing directional ranging error of the nth well along the magnetic ranging direction from the bottom boundary relative to the first well, k is a preset ranging error confidence factor, is the interwell spacing directional ranging error, p v is the well trajectory vertical control error.

[0137] Step c: the final actual interwell spacing directional ranging error of the nth well along the magnetic ranging direction from the bottom boundary relative to the first well can be calculated according to the formula of step b, and the calculation formula is as follows: assuming that the number of bottom wells is n,

[0138]

[0139] wherein, E np is the final actual interwell spacing directional ranging error of the nth well along the magnetic ranging direction from the bottom boundary relative to the first well, k is a preset ranging error confidence factor, is the interwell spacing directional ranging error, p v is the well trajectory vertical control error.

[0140] Step d: the actual interwell spacing directional ranging error of the (n+1)th well along the magnetic ranging direction from the bottom boundary relative to the nth well can be calculated according to the preset ranging error confidence factor, the interwell spacing directional ranging error, the normal spacing error of the interwell spacing directional and the three-dimensional well pattern, and the calculation formula is as follows:

[0141]

[0142] wherein, is the actual interwell spacing directional ranging error of the (n+1)th well along the magnetic ranging direction from the bottom boundary relative to the nth well, k is a preset ranging error confidence factor, is the interwell spacing directional ranging error, is the normal spacing error of the interwell spacing directional, is the three-dimensional well pattern.

[0143] Step e: the final actual interwell spacing directional ranging error of the (n+1)th well along the magnetic ranging direction from the bottom boundary relative to the nth well can be calculated according to the well trajectory vertical control error, the preset ranging error confidence factor, the interwell spacing directional ranging error, the normal spacing error of the interwell spacing directional and the three-dimensional well pattern, and the calculation formula is as follows:

[0144]

[0145] wherein, e vp is the final actual interwell spacing directional ranging error of the (n+1)th well along the magnetic ranging direction from the bottom boundary relative to the nth well, k is a preset ranging error confidence factor, is the interwell spacing directional ranging error, p represents the normal spacing error in the well spacing direction. v Error in vertical control of wellbore trajectory

[0146] Difference, It is in the form of a three-dimensional well network.

[0147] Step f: Based on the formula in step e, the final actual well spacing error relative to well n along the magnetic ranging direction from the bottom boundary of well (n+m-1) can be calculated. Assuming the number of well network layers is m, the specific calculation formula is as follows:

[0148]

[0149] Among them, E mp Let k be the distance measurement error in the direction of the final actual well spacing between well (n+m-1) relative to well n along the magnetic distance measurement direction from the bottom boundary, where k is the preset distance measurement error confidence factor. This refers to the distance measurement error in the well spacing direction. p represents the normal spacing error in the well spacing direction. v This refers to the vertical control error of the wellbore trajectory. It is in the form of a three-dimensional well network.

[0150] Step g: Based on the vertical control error of the wellbore trajectory, the preset ranging error confidence factor, the ranging error in the well spacing direction, the normal spacing error in the well spacing direction, and the three-dimensional well network form, calculate the final actual well spacing direction ranging error of the top horizontal well diagonally opposite the reference well along the magnetic ranging direction from the bottom boundary. The specific calculation formula is as follows:

[0151]

[0152] Among them, E mn The distance measurement error in the direction of the final actual well spacing relative to the reference well is represented by k, which is a preset distance measurement error confidence factor. (This refers to the distance measurement error between the top horizontal well and the reference well, diagonally opposite the reference well along the magnetic ranging direction from the bottom boundary.) This refers to the distance measurement error in the well spacing direction. p represents the normal spacing error in the well spacing direction. v This refers to the vertical control error of the wellbore trajectory. It is in the form of a three-dimensional well network.

[0153] Let the trajectory control tolerance of the top well in the vertical direction be... The final actual well spacing distance error relative to the reference well, diagonally opposite the reference well along the magnetic ranging direction from the bottom boundary, needs to meet the following conditions:

[0154]

[0155] After formula transformation, the calculation formula of the bottom layer well number n can be obtained as follows:

[0156]

[0157] Wherein, n is the bottom layer well number, fix is the integral function, AH is the trajectory control tolerance, m is the well spacing direction ranging error,

[0158] m is an even number, k is a preset ranging error confidence factor, max is a maximum value function, is the well spacing direction ranging error, is the three-dimensional well pattern form, is the normal spacing error in the well spacing direction, is the well trajectory vertical control error.

[0159] On the basis of the above embodiment, the small-spacing horizontal well cluster well pattern parameter generation method is further explained in this embodiment. In this embodiment, the preset well trajectory control error further includes a well trajectory horizontal control error, the well pattern well number includes a bottom layer well number, and S105 includes:

[0160] S401, determining a well pattern lateral offset according to the bottom layer well number, the preset ranging error confidence factor, the well spacing direction ranging error, the normal spacing error in the well spacing direction, the well trajectory horizontal control error, the well pattern layer number and the three-dimensional well pattern form.

[0161] In this embodiment, the well spacing direction ranging error, the normal spacing error in the well spacing direction and the well trajectory horizontal control error are synthesized, the error range is adjusted through the preset ranging error confidence factor, and an error model of the well pattern lateral offset is established. The bottom layer well number, the well pattern layer number and the three-dimensional well pattern form are input into the error model of the well pattern lateral offset, and the well pattern lateral offset is output. The determination of the well pattern lateral offset is realized by establishing the error model of the well pattern lateral offset, which can improve the accuracy of data determination. The well pattern lateral offset can also be determined in other ways, which is not specifically limited in this embodiment.

[0162] On the basis of the above embodiment, the small-spacing horizontal well cluster well pattern parameter generation method is further explained in this embodiment. The calculation formula of S401 of the small-spacing horizontal well cluster well pattern parameter generation method in this embodiment is as follows:

[0163]

[0164] Wherein, is the well pattern lateral offset, n is the bottom layer well number, k is the preset ranging error confidence factor, max is the maximum value function, is the well spacing direction ranging error, is the three-dimensional well pattern form, is the normal spacing error in the well spacing direction, m is the number of well pattern layers, and m is an even number.

[0165] A specific calculation formula for determining the lateral offset of the well pattern is provided, which can improve efficiency and accuracy.

[0166] On the basis of the above embodiment, the well pattern parameter generation method for small-spacing horizontal well cluster is further explained in this embodiment. In the well pattern parameter generation method for small-spacing horizontal well cluster, the number of wells in the well pattern is distributed in the form of an equilateral triangle well pattern on the reservoir thickness.

[0167] The layout of the equilateral triangle well pattern reduces well interference, improves the efficiency of well spacing, optimizes the fracturing effect, and reduces the cost of production, becoming an efficient and economical well pattern design scheme in oilfield development.

[0168]

[0169] A specific embodiment is given below.

[0170] The reservoir thickness is 20 meters, the safety distance of the top well or the bottom well from the reservoir boundary is 3 meters or 1.5 meters, or the safety distance of the top well or the bottom well from the reservoir boundary is 1.5 meters or 1.5 meters, the well spacing is 5 meters, the number of well pattern layers is 4, and the three-dimensional well pattern form is 60°, equilateral triangle well pattern.

[0171] The calculation of the design distance from the top well to the bottom well is as follows:

[0172]

[0173] Assuming that the first well on the left side of the bottom well is the reference well, considering the position measurement error of the well, the distance from the bottom well to the bottom of the reservoir is designed to be 3.5m, and the distance from the top well to the top of the reservoir is also 3.5m. Therefore, the tolerance of the trajectory control in the vertical direction of the top well is 2m. At the same time, it is assumed that the vertical control error of the well trajectory is 0.2m, and the horizontal control error of the well trajectory is 0.4m.

[0174] The calculation of the distance measurement error in the well spacing direction and the normal spacing error in the well spacing direction is as follows:

[0175] ,

[0176] Taking the preset distance measurement error confidence factor k=3.5, the calculation of the number of bottom wells n is as follows:

[0177]

[0178] ​​

[0179] Finally, the calculation result of the bottom layer well number n is 29.

[0180] The well pattern well number N is calculated as follows:

[0181]

[0182] Maximum lateral offset is calculated as follows:

[0183]

[0184] Figure 4 The well spacing direction ranging error and the bottom layer well number relationship diagram provided by the embodiment of the application, Figure 5 The well spacing direction ranging error and the well pattern well number relationship diagram provided by the embodiment of the application,

[0185] The well spacing direction ranging error and the well pattern well number relationship diagram provided by the embodiment of the application, Figure 6 The well spacing direction ranging error and the well pattern well number relationship diagram provided by the embodiment of the application. Figure 4 , Figure 5 and Figure 6 The abscissa of and is the well spacing direction ranging error, and the ordinate is the bottom layer well number, the well pattern well number and the well pattern lateral offset respectively. The well spacing direction ranging error is in units of m, the bottom layer well number is in units of well, the well pattern well number is in units of well, and the well pattern lateral offset is in units of m. With the gradual increase of the well spacing direction ranging error, the bottom layer well number and the well pattern well number gradually decrease, and the well pattern lateral offset gradually increases.

[0186] Figure 7 The normal spacing error of the well spacing direction and the bottom layer well number relationship diagram provided by the embodiment of the application, Figure 8 The normal spacing error of the well spacing direction and the well pattern well number relationship diagram provided by the embodiment of the application, Figure 9 The normal spacing error of the well spacing direction and the well pattern lateral offset relationship diagram provided by the embodiment of the application. Figure 7 , Figure 8 and Figure 9 The abscissa of and is the normal spacing error of the well spacing direction, and the ordinate is the bottom layer well number, the well pattern well number and the well pattern lateral offset respectively. The normal spacing error of the well spacing direction is in units of m, the bottom layer well number is in units of well, the well pattern well number is in units of well, and the well pattern lateral offset is in units of m. With the gradual increase of the normal spacing error of the well spacing direction, the bottom layer well number, the well pattern well number and the well pattern lateral offset gradually decrease.

[0187] Figure 10 The well trajectory vertical control error and the bottom layer well number relationship diagram provided by the embodiment of the application, Figure 11 ​​A schematic diagram of the relationship between the vertical control error of the wellbore trajectory and the number of well patterns is provided for an embodiment of the present application, Figure 12 A schematic diagram of the relationship between the vertical control error of the wellbore trajectory and the lateral offset of the well pattern is provided for an embodiment of the present application. Figure 10 , Figure 11 and Figure 12 The abscissa of each of the graphs is the vertical control error of the wellbore trajectory, and the ordinate is the number of bottom layer wells, the number of well patterns, and the lateral offset of the well pattern, respectively. The vertical control error of the wellbore trajectory is in units of m, the number of bottom layer wells is in units of wells, the number of well patterns is in units of wells, and the lateral offset of the well pattern is in units of m. As the vertical control error of the wellbore trajectory gradually increases, the number of bottom layer wells, the number of well patterns, and the lateral offset of the well pattern gradually decrease.

[0188] Figure 13 A schematic diagram of the relationship between the horizontal control error of the wellbore trajectory and the number of bottom layer wells is provided for an embodiment of the present application, Figure 14 A schematic diagram of the relationship between the horizontal control error of the wellbore trajectory and the number of well patterns is provided for an embodiment of the present application, Figure 15 A schematic diagram of the relationship between the horizontal control error of the wellbore trajectory and the lateral offset of the well pattern is provided for an embodiment of the present application. Figure 13 , Figure 14 and Figure 15 The abscissa of each of the graphs is the horizontal control error of the wellbore trajectory, and the ordinate is the number of bottom layer wells, the number of well patterns, and the lateral offset of the well pattern, respectively. The horizontal control error of the wellbore trajectory is in units of m, the number of bottom layer wells is in units of wells, the number of well patterns is in units of wells, and the lateral offset of the well pattern is in units of m. As the horizontal control error of the wellbore trajectory gradually increases, the number of bottom layer wells and the number of well patterns change very little, and the lateral offset of the well pattern gradually increases.

[0189] Figure 16 A structural schematic diagram of a small-spacing horizontal well cluster well pattern parameter generation device is provided for an embodiment of the present application. As shown in Figure 16 the present embodiment, the small-spacing horizontal well cluster well pattern parameter generation device can be located in an electronic device. The small-spacing horizontal well cluster well pattern parameter generation device includes:

[0190] A parameter acquisition module 501 is configured to acquire well cluster layout requirement parameters and ranging tool parameters;

[0191] A trajectory control tolerance acquisition module 502 is configured to determine a trajectory control tolerance of a top layer well in a vertical direction according to the well cluster layout requirement parameters;

[0192] A magnetic ranging error acquisition module 503 is configured to determine a magnetic ranging error according to the ranging tool parameters;

[0193] A well pattern well number acquisition module 504 is configured to determine a number of well patterns according to a preset ranging error confidence factor, a preset wellbore trajectory control error, the trajectory control tolerance, the magnetic ranging error, and the well cluster layout requirement parameters.

[0194] The well pattern lateral offset acquisition module 505 is configured to determine a well pattern lateral offset according to the preset ranging error confidence factor, the magnetic ranging error, a preset well trajectory control error, a well pattern well number, and a well cluster layout requirement parameter.

[0195] The horizontal well cluster well pattern parameter acquisition module 506 is configured to perform well pattern layout processing according to the well pattern well number, the well pattern lateral offset, and the well cluster layout requirement parameter, and determine a horizontal well cluster well pattern parameter.

[0196] The small-spacing horizontal well cluster well pattern parameter generation device provided in this embodiment can perform Figure 1 The technical scheme of the small-spacing horizontal well cluster well pattern parameter generation method embodiment shown in the figure is similar to that of the small-spacing horizontal well cluster well pattern parameter generation device embodiment, and has the same technical effects. Figure 1 The technical scheme of the small-spacing horizontal well cluster well pattern parameter generation method embodiment shown in the figure is similar to that of the small-spacing horizontal well cluster well pattern parameter generation device embodiment, and has the same technical effects.

[0197] Meanwhile, the small-spacing horizontal well cluster well pattern parameter generation device provided in this embodiment is further refined on the basis of the small-spacing horizontal well cluster well pattern parameter generation device provided in the previous embodiment.

[0198] Optionally, in this embodiment, the well cluster layout requirement parameter includes a reservoir thickness, a safety distance of a top well or a bottom well from a reservoir boundary, a well spacing, a well pattern layer number, and a three-dimensional well pattern form, and the trajectory control tolerance acquisition module 502 is configured to:

[0199] determine a design distance from the top well to the bottom well according to the well pattern layer number, the well spacing, and the three-dimensional well pattern form;

[0200] determine a trajectory control tolerance of the top well in the vertical direction according to the reservoir thickness, the design distance, and the safety distance of the top well or the bottom well from the reservoir boundary.

[0201] Optionally, in this embodiment, the preset well trajectory control error includes a well trajectory vertical control

[0202] error, and the magnetic ranging error includes a well spacing direction ranging error and a normal spacing error in the well spacing direction, and the well pattern well number acquisition module 504 is configured to:

[0203] determine a bottom well number according to the well spacing direction ranging error, the normal spacing error in the well spacing direction, the well trajectory vertical control error, the well pattern layer number, the three-dimensional well pattern form, the preset ranging error confidence factor, and the trajectory control tolerance;

[0204] determine the well pattern well number according to the bottom well number and the well pattern layer number.

[0205] Optionally, in this embodiment, the well pattern well number acquisition module 504 is further configured to:

[0206] The calculation formula of the bottom layer well number n is determined according to the ranging error in the well spacing direction, the normal spacing error in the well spacing direction, the vertical control error of the well trajectory, the well pattern layer number, the three-dimensional well pattern form, a preset ranging error confidence factor and a trajectory control tolerance, and is as follows:

[0207]

[0208] Wherein, n is the bottom layer well number, fix is an integral function, is the trajectory control tolerance, m is the well pattern layer number, m is an even number, k is the preset ranging error confidence factor, max is a maximum value function, is the ranging error in the well spacing direction, is the three-dimensional well pattern form, is the normal spacing error in the well spacing direction, p v is the vertical control error of the well trajectory;

[0209] The calculation formula of the well pattern well number N is determined according to the bottom layer well number n and the well pattern layer number m, and is as follows:

[0210]

[0211] Wherein, N is the well pattern well number, m is the well pattern layer number, m is an even number, and n is the bottom layer well number.

[0212] Optionally, in the embodiment, the preset well trajectory control error further includes a well trajectory horizontal control error, the well pattern well number includes the bottom layer well number, and the well pattern lateral offset obtaining module 505 is configured to:

[0213] The well pattern lateral offset is determined according to the bottom layer well number n, the preset ranging error confidence factor k, the ranging error in the well spacing direction, the normal spacing error in the well spacing direction, the well trajectory horizontal control error, the well pattern layer number m and the three-dimensional well pattern form.

[0214] Optionally, in the embodiment, the well pattern lateral offset obtaining module 505 is further configured to:

[0215] The calculation formula of the well pattern lateral offset is determined according to the bottom layer well number n, the preset ranging error confidence factor k, the ranging error in the well spacing direction, the normal spacing error in the well spacing direction, the well trajectory horizontal control error, the well pattern layer number m and the three-dimensional well pattern form, and is as follows:

[0216]

[0217] Wherein, is the well pattern lateral offset, n is the bottom layer well number, k is the preset ranging error confidence factor, max is a maximum value function, is the ranging error in the well spacing direction, is the three-dimensional well pattern form, p is the normal spacing error in the interwell spacing direction h p is the normal spacing error in the interwell spacing direction

[0218] Optionally, in the embodiment, the number of wells in the well pattern is distributed in the form of an equilateral triangle well pattern in the reservoir thickness.

[0219] The well pattern cluster well pattern parameter generation device for small well spacing horizontal wells provided in the embodiment can execute the technical solutions of the well pattern cluster well pattern parameter generation method for small well spacing horizontal wells described above, and has similar implementation principles and technical effects to the well pattern cluster well pattern parameter generation method for small well spacing horizontal wells described above, which will not be repeated here.

[0220] Figure 17 The structure schematic diagram of the electronic device provided in the embodiment is shown. The electronic device is intended to various electronic devices that can execute the well pattern cluster well pattern parameter generation method for small well spacing horizontal wells, such as microcomputers, single-chip microcomputers, and other suitable computers. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the invention described and / or claimed herein.

[0221] As shown in Figure 17 The electronic device includes at least one processor 601 and a memory 602. The electronic device also includes a communication component 603. The processor 601, the memory 602, and the communication component 603 are connected through a bus 604.

[0222] In the specific implementation process, the at least one processor 601 executes the computer execution instructions stored in the memory 602, so that the at least one processor 601 executes the well pattern cluster well pattern parameter generation method for small well spacing horizontal wells as executed by the electronic device side.

[0223] The specific implementation process of the processor 601 can refer to the well pattern cluster well pattern parameter generation method for small well spacing horizontal wells described above, which has similar implementation principles and technical effects, and will not be repeated here.

[0224] In the above embodiment, it should be understood that the processor 601 can be a central processing unit (CPU), and can also be other general-purpose processors, digital signal processors (DSP), application specific integrated circuits (ASIC), etc. The general-purpose processor 601 can be a microprocessor or the processor can also be any conventional processor. The steps of the method disclosed in the invention can be directly embodied as hardware processor instructions

[0225] The operations can be performed in sequence or in parallel, or a combination of the two.

[0226] The memory 602 can include a volatile RAM memory and can also include a non-volatile storage NVM, such as at least one disk memory.

[0227] The bus 604 can be an Industry Standard Architecture (ISA) bus, a Peripheral Component (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus. The bus 604 can be divided into an address bus, a data bus, and a control bus. For ease of representation, the bus 604 in the drawings of the present application does not limit to only one bus or one type of bus.

[0228] The functions implemented by the electronic device and the master device described above are introduced for the scheme provided by the embodiments of the present application. It can be understood that the electronic device or the master device includes a hardware structure and / or a software module corresponding to the execution of each function in order to implement the above functions. The units and algorithm steps of each example described in combination with the embodiments disclosed in the embodiments of the present application can be implemented in the form of hardware or a combination of hardware and computer software. Whether a certain function is implemented in hardware or computer software driven hardware depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of the technical solution of the embodiments of the present application.

[0229] The present application also provides a computer readable storage medium, the computer readable storage medium stores computer execution instructions, when the processor executes the computer execution instructions, the method for generating parameters of a small-spacing horizontal well cluster pattern is realized.

[0230] The computer readable storage medium described above can be implemented by any type of volatile, non-volatile storage device or their combination, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic memory, flash memory, magnetic disk or optical disk.

[0231] An example readable storage medium is coupled to the processor such that the processor can read information from, and can write information to, the readable storage medium. The readable storage medium can also be a component of the processor. The processor and the readable storage medium can be located in an Application Specific Integrated Circuits (ASIC). The processor and the readable storage medium can also be present as discrete components in an electronic device or host device.

[0232] The memory 602 is a non-transitory computer readable storage medium provided by the present application. The non-transitory computer readable storage medium of the present application stores computer instructions for causing a computer to execute the small-spacing horizontal well cluster pattern parameter generation method provided by the present application.

[0233] The memory 602 is a non-transitory computer readable storage medium, which can be used to store non-transitory software programs, non-transitory computer executable programs and modules, such as program instructions / modules corresponding to the small-spacing horizontal well cluster pattern parameter generation method in the embodiments of the present application (for example, the parameter acquisition module 501, the trajectory control tolerance acquisition module 502, the magnetic ranging error acquisition module 503, the well pattern well number acquisition module 504, the well pattern lateral offset acquisition module 505 and the horizontal well cluster pattern parameter acquisition module 506 shown in the figure). The processor 601 executes various functional applications and data processing by running the non-transitory software programs, instructions and modules stored in the memory 602, that is, implements the small-spacing horizontal well cluster pattern parameter generation method in the method embodiments described above. Figure 16

[0234] Meanwhile, the present embodiment also provides a computer program product, which includes a computer program, and the computer program is used to implement the small-spacing horizontal well cluster pattern parameter generation method of the above-mentioned embodiments when executed by a processor.

[0235] It should be noted that the user information (including but not limited to user equipment information, user personal information, etc.) and data (including but not limited to data for analysis, stored data, displayed data, etc.) involved in one or more embodiments of the present application are all information and data authorized by the user or authorized by all parties, and the collection, use and processing of related data need to comply with relevant laws, regulations and standards, and provide corresponding operation portal for user to choose authorization or refusal.

[0236] ​It should be noted that, for the foregoing method embodiments, the sequences of the described acts are merely examples, and thus the order of the acts can be changed, and / or two or more acts can be performed at the same time, unless explicitly stated otherwise. Furthermore, the described acts can be performed by hardware, software, firmware, or combinations thereof, unless explicitly stated otherwise.

[0237] Further, it should be noted that, although the steps in the flowcharts are shown in a particular order, the order of the steps can be changed, unless explicitly stated otherwise. Furthermore, some steps can be performed simultaneously, unless explicitly stated otherwise. Also, some steps can be performed by different entities, unless explicitly stated otherwise.

[0238] Further, at least some of the steps in the flowcharts can include multiple sub-steps or multiple stages, unless explicitly stated otherwise. Further, the execution of the steps can be performed at the same time or at different times, unless explicitly stated otherwise. Further, the execution of the sub-steps or stages can be performed at the same time or at different times, unless explicitly stated otherwise.

[0239] It should be understood that the above-described apparatus embodiments are merely illustrative, and the apparatus of the present application can also be implemented in other manners. For example, the division of the units / modules in the above-described embodiments is merely a logical function division, and there can be another division manner in actual implementation. For example, a plurality of units / modules or components can be combined or integrated into another system, or some features can be ignored or not executed.

[0240] In addition, unless specifically stated otherwise, each functional unit / module in the various embodiments of the present application can be integrated into one unit / module, or each unit / module can exist physically separately, or two or more units / modules can be integrated together. The above-mentioned integrated unit / module can be realized in the form of hardware or in the form of a software program module.

[0241] In the above-described embodiments, the description of each embodiment has its own focus, and the parts not described in detail in a certain embodiment can be referred to the relevant description of other embodiments. Each technical feature of the above-described embodiments can be combined arbitrarily, and in order to make the description concise, not all possible combinations of the technical features in the above-described embodiments are described, and it should be considered that any combination of the technical features is within the scope of the present application, as long as the combination does not exist contradictions.

[0242] Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed herein. It is intended that the specification and examples be considered as exemplary only, with the true scope and spirit of the application being indicated by the following claims.

[0243] It is to be understood that the application is not limited to the precise construction herein described and as shown in the attached drawings, and that various modifications and changes can be made by those skilled in the art without departing from the scope of the application. The scope of the application is to be indicated by the appended claims, rather than the description and examples.

Claims

1. A method for generating well network parameters for a horizontal well cluster with small well spacing, characterized in that, include: Obtain well cluster layout requirements and ranging tool parameters; wherein, the well cluster layout requirements include reservoir thickness, safe distance of top or bottom wells from reservoir boundary, well spacing, number of well network layers, and three-dimensional well network form; Based on the well cluster layout requirements parameters, determine the trajectory control tolerance of the top well in the vertical direction; The magnetic ranging error is determined based on the ranging tool parameters; the magnetic ranging error includes the ranging error in the well spacing direction and the normal spacing error in the well spacing direction. The number of wells in the well network is determined based on the preset ranging error confidence factor, the preset well trajectory control error, the trajectory control tolerance, the magnetic ranging error, and the well cluster layout requirement parameters; the preset well trajectory control error includes the well trajectory vertical control error and the well trajectory horizontal control error. Based on the preset ranging error confidence factor, the magnetic ranging error, the preset well trajectory control error, the number of wells in the well network, and the well cluster layout requirement parameters, the lateral offset of the well network is determined; Well network layout processing is performed based on the number of wells in the well network, the lateral offset of the well network, and the well cluster layout requirements parameters to determine the horizontal well cluster network parameters; The determination of the number of wells in the well network includes: determining the number of bottom-layer wells based on the ranging error in the well spacing direction, the normal spacing error in the well spacing direction, the vertical control error of the well trajectory, the number of well network layers, the three-dimensional well network form, the preset ranging error confidence factor, and the trajectory control tolerance, wherein the number of bottom-layer wells is obtained based on the following calculation formula: Wherein, n is the number of bottom wells, fix is ​​the floor function, ΔH is the trajectory control tolerance, m is the number of well network layers (m is an even number), k is the preset ranging error confidence factor, and max is the maximum value function. The distance measurement error in the well spacing direction is... It is in the form of a three-dimensional well network, the p represents the normal spacing error in the well spacing direction. v This refers to the vertical control error of the wellbore trajectory. The number of wells in the well network is determined based on the number of bottom wells and the number of well network layers; wherein, the number of wells in the well network is calculated based on the following formula: Wherein, N is the number of wells in the well network, m is the number of well layers in the well network, m is an even number, and n is the number of wells in the bottom layer; The determination of the well network lateral offset includes: Based on the number of bottom wells, the preset ranging error confidence factor, the ranging error in the well spacing direction, the normal spacing error in the well spacing direction, the horizontal control error of the well trajectory, the number of well network layers, and the three-dimensional well network form, the lateral offset of the well network is determined; The lateral offset of the well network is obtained based on the following calculation formula: Among them, the The well network lateral offset is defined as follows: n is the number of wells in the bottom layer, k is a preset ranging error confidence factor, and max is a function for determining the maximum value. The distance measurement error in the well spacing direction is... It is in the form of a three-dimensional well network, the p represents the normal spacing error in the well spacing direction. h The error is the horizontal control error of the well trajectory, where m is the number of well network layers and m is an even number.

2. The method for generating well network parameters for small-spacing horizontal well clusters according to claim 1, Its characteristics are: The step of determining the trajectory control tolerance of the top well in the vertical direction based on the well cluster layout requirement parameters includes: The design distance from the top well to the bottom well is determined based on the number of well network layers, the well spacing, and the three-dimensional well network form. The trajectory control tolerance of the top well in the vertical direction is determined based on the reservoir thickness, the design distance, and the safe distance between the top well or bottom well and the reservoir boundary.

3. The method for generating well network parameters for small-spacing horizontal well clusters according to claim 2, Its characteristics are: The step of determining the number of wells in the well network based on the preset ranging error confidence factor, the preset wellbore trajectory control error, the trajectory control tolerance, the magnetic ranging error, and the well cluster layout requirement parameters includes: Based on the well spacing direction ranging error, the normal spacing error of the well spacing direction, the well trajectory vertical control error, the number of well network layers, the three-dimensional well network form, and the preset... The ranging error confidence factor and the trajectory control tolerance are used to determine the number of bottom wells; The number of wells in the well network is determined based on the number of bottom wells and the number of well network layers.

4. The method for generating well network parameters for small-spacing horizontal well clusters according to claim 3, characterized in that, The number of wells in the well network includes the number of bottom wells; The step of determining the well network lateral offset based on the preset ranging error confidence factor, the magnetic ranging error, the preset well trajectory control error, the number of wells in the well network, and the well cluster layout requirement parameters includes: The well network lateral offset is determined based on the number of bottom wells, the preset ranging error confidence factor, the ranging error in the well spacing direction, the normal spacing error in the well spacing direction, the horizontal control error of the well trajectory, the number of well network layers, and the three-dimensional well network form.

5. The method for generating well network parameters for small-spacing horizontal well clusters according to any one of claims 2 to 4, characterized in that, The number of wells in the well network is distributed in the form of an equilateral triangle over the reservoir thickness.

6. A device for generating well network parameters for a horizontal well cluster with small well spacing, characterized in that, include: The parameter acquisition module is used to acquire well cluster layout requirement parameters and ranging tool parameters; wherein, the well cluster layout requirement parameters include reservoir thickness, safe distance between the top or bottom well and the reservoir boundary, well spacing, number of well network layers, and three-dimensional well network form; The trajectory control tolerance acquisition module is used to determine the trajectory control tolerance of the top well in the vertical direction based on the well cluster layout requirement parameters. The magnetic ranging error acquisition module is used to determine the magnetic ranging error based on the ranging tool parameters; the magnetic ranging error includes the ranging error in the well spacing direction and the normal spacing error in the well spacing direction; The well network and well number acquisition module is used to determine the well network and well number based on a preset ranging error confidence factor, a preset wellbore trajectory control error, the trajectory control tolerance, the magnetic ranging error, and the well cluster layout requirement parameters; the preset wellbore trajectory control error includes wellbore trajectory vertical control error and wellbore trajectory horizontal control error; The well network lateral offset acquisition module is used to determine the well network lateral offset based on the preset ranging error confidence factor, the magnetic ranging error, the preset well trajectory control error, the number of wells in the well network, and the well cluster layout requirement parameters. The horizontal well cluster well pattern parameter acquisition module is used to perform well pattern layout processing based on the number of wells in the well pattern, the lateral offset of the well pattern, and the well cluster layout requirement parameters to determine the horizontal well cluster well pattern parameters; The well network well count acquisition module is specifically used to determine the number of bottom-layer wells based on the well spacing direction ranging error, the normal spacing error of the well spacing direction, the well trajectory vertical control error, the number of well network layers, the three-dimensional well network form, the preset ranging error confidence factor, and the trajectory control tolerance. The number of bottom-layer wells is obtained based on the following calculation formula: Wherein, n is the number of bottom wells, fix is ​​the floor function, ΔH is the trajectory control tolerance, m is the number of well network layers (m is an even number), k is the preset ranging error confidence factor, and max is the maximum value function. The distance measurement error in the well spacing direction is... It is in the form of a three-dimensional well network, the p represents the normal spacing error in the well spacing direction. v This refers to the vertical control error of the wellbore trajectory. The number of wells in the well network is determined based on the number of bottom wells and the number of well network layers; wherein, the number of wells in the well network is calculated based on the following formula: Wherein, N is the number of wells in the well network, m is the number of well layers in the well network, m is an even number, and n is the number of wells in the bottom layer; The well network lateral offset acquisition module is specifically used to determine the well network lateral offset based on the number of bottom wells, the preset ranging error confidence factor, the ranging error in the well spacing direction, the normal spacing error in the well spacing direction, the horizontal control error of the well trajectory, the number of well network layers, and the three-dimensional well network form. The lateral offset of the well network is obtained based on the following calculation formula: Among them, the The well network lateral offset is defined as follows: n is the number of wells in the bottom layer, k is a preset ranging error confidence factor, and max is a function for determining the maximum value. The distance measurement error in the well spacing direction is... It is in the form of a three-dimensional well network, the p represents the normal spacing error in the well spacing direction. h The error is the horizontal control error of the well trajectory, where m is the number of well network layers and m is an even number.

7. An electronic device, characterized in that, include: A processor, and a memory communicatively connected to the processor; The memory stores computer-executed instructions; The processor executes computer execution instructions stored in the memory to implement the method for generating well network parameters of small-spacing horizontal well clusters as described in any one of claims 1 to 5.

8. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer-executable instructions, which, when executed by a processor, are used to implement the method for generating well network parameters of small-spacing horizontal well clusters as described in any one of claims 1 to 5.

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