Wafer surface condition detection device and processing equipment

Abstract

The present disclosure provides a wafer surface state detection device and processing equipment. The wafer surface state detection device includes a beam transceiver, which emits a first detection beam and receives a second detection beam; the first detection beam and the second detection beam of each detection point are used to obtain detection point state data; a driving mechanism is used to load and drive the beam transceiver to move along a predetermined path; the predetermined path includes a first path segment extending circumferentially along the peripheral area of ​​the wafer, and a second path segment connected to both ends of the first path segment to form a closed path; the second path segment has a diameter-changing portion closer to the center relative to the first path segment. The signal analysis unit is coupled to the beam transceiver to determine whether the wafer surface state is qualified based on the difference between the detection point state data of the detected detection points or relative to the preset state data. The processing equipment includes a wafer surface state detection device and processing equipment. The path traveled by the beam transceiver can be reduced, thereby improving efficiency.

Description

Technical Field

[0001] The present disclosure relates to the field of wafer production technology, and in particular to a wafer surface state detection device and processing equipment. Background Art

[0002] A wafer refers to a silicon chip used to make silicon semiconductor circuits, and its raw material is silicon. In order to improve the wafer's qualification rate, performance, and consistency, the wafer's temperature, position, and levelness usually need to be tested before processing, and adjustments must be made based on the test results to avoid processing errors caused by thermal expansion and contraction, position offset, and tilt. Therefore, testing the wafer before processing is a crucial pre-step in semiconductor manufacturing. However, in related technologies, the detection path for the wafer surface is mostly a serpentine path. Although this path is simple and easy to implement, this detection path has low detection efficiency and accuracy due to the large number of detection paths and the large number of detection points in low-value areas on the wafer surface. Summary of the Invention

[0003] In view of the above-mentioned shortcomings of the prior art, the purpose of the present disclosure is to provide a wafer surface state detection device and processing equipment to solve the problems in the related art.

[0004] A first aspect of the present disclosure provides a wafer surface condition detection device, comprising:

[0005] A beam transceiver is disposed above the wafer and transmits a first detection beam directed to different detection points on the wafer surface and receives a second detection beam; the first detection beam and the second detection beam at each detection point are used to obtain detection point status data;

[0006] a drive mechanism for loading and driving the optical beam transceiver to move along a predetermined path; the predetermined path comprising: a first path segment extending circumferentially along the periphery of the wafer, and a second path segment connected to both ends of the first path segment to form a closed path; the second path segment having a diameter-reducing portion closer to the center than the first path segment;

[0007] A signal analysis unit is coupled to the light beam transceiver and is used to determine whether the surface condition of the wafer is qualified based on the difference between the detection point status data of the detected detection points or relative to the preset status data; the preset status data includes a standard thickness that conforms to the wafer specifications.

[0008] In an embodiment of the first aspect, the diameter-changing portion passes through the center of the first path segment.

[0009] In an embodiment of the first aspect, the diameter-changing portion does not pass through the center of the first path segment.

[0010] In an embodiment of the first aspect, the diameter-varying portion is located between the center of the circle and the first path segment; and / or the center of the circle is located between the diameter-varying portion and the first path segment.

[0011] In an embodiment of the first aspect, the predetermined path further includes a retest path for performing rotational testing on a circumferential area of ​​a test point on the wafer surface where the test result is abnormal.

[0012] In an embodiment of the first aspect, the second path segment has a plurality of bends along its extension direction, the bends are implemented to be formed by curves or broken lines, and the number of the bends is positively correlated with the size of the wafer.

[0013] In an embodiment of the first aspect, the detection occurs before wafer processing; the wafer surface state is at least one of temperature, position and levelness.

[0014] In an embodiment of the first aspect, the driving mechanism includes a radial support and a loading portion for loading the optical beam transceiver; the radial support is rotatably arranged, and the loading portion is arranged on the radial support so as to reciprocate along the extension direction of the radial support.

[0015] In an embodiment of the first aspect, a reciprocating component is provided between the loading portion and the radial support; the reciprocating component includes a reciprocating screw and a reciprocating slider that are threaded together; the reciprocating screw is rotatable and is provided on the radial support parallel to the radial support, and the reciprocating slider is slidably coupled to the radial support along the extension direction of the radial support; the loading portion is provided on the reciprocating slider.

[0016] A second aspect of the present disclosure provides a processing device, comprising a wafer processing platform and the wafer surface state detection device; the wafer surface state detection device is correspondingly provided on the wafer processing platform.

[0017] As described above, the present disclosure provides a wafer surface condition detection device and processing equipment. The wafer surface condition detection device includes a beam transceiver, a drive mechanism, and a signal analysis unit. The beam transceiver is disposed above the wafer and transmits a first detection beam directed to different detection points on the wafer surface and receives a second detection beam. The first and second detection beams at each detection point are used to obtain detection point status data. The drive mechanism is configured to load and drive the beam transceiver to move along a predetermined path. The predetermined path includes a first path segment extending circumferentially along the periphery of the wafer and a second path segment connected to both ends of the first path segment to form a closed path. The second path segment includes a diameter-reducing portion closer to the center than the first path segment. The signal analysis unit, coupled to the beam transceiver, determines whether the wafer surface condition is qualified based on differences between the detection point status data of the detected detection points or relative to preset status data. The preset status data includes a standard thickness that conforms to wafer specifications. The processing equipment includes a wafer processing stage and the wafer surface condition detection device. The advantage of the above arrangement is that when the optical beam transceiver performs circumferential outer ring rotation detection along the first path segment, it can quickly obtain key data of the edge area, facilitating a rapid assessment of the overall circumferential state of the wafer; and when the optical beam transceiver performs two radial detections along the second path segment, it can quickly assess the overall radial state of the wafer, that is, the first path segment and the second path segment cover the high-value area of ​​the wafer surface. Therefore, compared with the serpentine path in the prior art, the present application can not only reduce the path that the optical beam transceiver needs to travel during the entire detection process to improve detection efficiency, but also improve the overall quality of the detection data by reducing the number of detection points in the low-value area, thereby improving detection accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 : is a schematic structural diagram of a wafer surface state detection device;

[0019] Figure 2 FIG is a circuit connection diagram of a wafer surface state detection device;

[0020] Figure 3 FIG is a schematic diagram of a first embodiment of a predetermined path;

[0021] Figure 4 FIG is a schematic diagram of a second embodiment of a predetermined path;

[0022] Figure 5 FIG is a schematic diagram of a third embodiment of a predetermined path;

[0023] Figure 6 : is a schematic diagram of the bending portion in the second path segment;

[0024] Figure 7 : is a cross-sectional schematic diagram of the driving mechanism disclosed herein;

[0025] Figure 8 is a cross-sectional schematic diagram of the driving mechanism of the present disclosure from another perspective;

[0026] Figure 9 The figure shows a schematic diagram of a predetermined path including a retest path;

[0027] Figure 10 : is a schematic diagram of the structure of a driving mechanism suitable for retesting the path;

[0028] Figure 11 , which is a schematic diagram of the structure of the computer device in the present disclosure.

[0029] Figure numerals: 100, wafer; 10, beam transceiver; 11, transmitting module; 12, receiving module; 20, predetermined path; 21, first path segment; 22, second path segment; 23, re-measurement path; 201, bending portion; 30, driving mechanism; 31, radial support member; 33, first driving member; 34, reciprocating member; 341, reciprocating screw; 342, reciprocating slider; 343, second driving member; 35, rotating rod; 36, third driving member; 40, signal analysis unit; 41, signal analyzer; 42, signal converter; 50, processing unit; 120, computer device; 1201, bus; 1202, processor; 1203, memory; 1204, communicator. DETAILED DESCRIPTION

[0030] The following describes the embodiments of the present disclosure through specific examples. Those skilled in the art can easily understand the other advantages and effects of the present disclosure from the information disclosed in this disclosure. The present disclosure can also be implemented or applied through different specific embodiments. The details of the present disclosure can also be modified or changed according to different viewpoints and application modules without departing from the spirit of the present disclosure. It should be noted that the embodiments and features in the embodiments of the present disclosure can be combined with each other unless there is a conflict.

[0031] The following is a detailed description of the embodiments of the present disclosure with reference to the accompanying drawings so that those skilled in the art can easily implement the present disclosure. The present disclosure can be embodied in many different forms and is not limited to the embodiments described herein.

[0032] Throughout the present disclosure, reference to terms such as "one embodiment," "some embodiments," "examples," "specific examples," or "some examples" means that a specific feature, structure, material, or characteristic described in conjunction with that embodiment or example is included in at least one embodiment or example of the present disclosure. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or a group of embodiments or examples. Furthermore, those skilled in the art may combine and integrate different embodiments or examples, and features of different embodiments or examples, as described in the present disclosure, without conflicting requirements.

[0033] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the context of this disclosure, "a group" means two or more, unless otherwise specifically defined.

[0034] In order to clearly describe the present disclosure, components not related to the description are omitted, and the same or similar components throughout the specification are denoted by the same reference numerals.

[0035] Throughout this specification, when a device is said to be "connected" to another device, this includes not only "direct connection" but also "indirect connection" with other elements interposed therebetween. Furthermore, when a device is said to "include" a certain component, unless otherwise stated, this does not exclude the inclusion of other components but rather implies that the device may include other components.

[0036] Although the terms first, second, etc. are used in this document to represent various elements in some examples, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, the first interface and the second interface, etc. are represented. Furthermore, as used in this document, the singular forms "one," "an," and "the" are intended to also include the plural forms, unless there is a contrary indication in the context. It should be further understood that the terms "comprise" and "include" indicate the presence of the described features, steps, operations, elements, modules, projects, types, and / or groups, but do not exclude the presence, occurrence, or addition of one or a group of other features, steps, operations, elements, modules, projects, types, and / or groups. The terms "or" and "and / or" used herein are interpreted as inclusive, or mean any one or any combination. Therefore, "A, B, or C" or "A, B, and / or C" means "any of the following: A; B; C; A and B; A and C; B and C; A, B, and C." Exceptions to this definition only occur when the combination of elements, functions, steps, or operations is inherently mutually exclusive in some way.

[0037] The technical terms used herein are intended only to refer to specific embodiments and are not intended to limit the present disclosure. The singular form used herein also includes the plural form unless the statement explicitly indicates otherwise. The term "comprising" as used in this specification is intended to specify specific features, regions, integers, steps, operations, elements, and / or components and does not exclude the presence or addition of other features, regions, integers, steps, operations, elements, and / or components.

[0038] Although not defined differently, all terms used herein, including technical and scientific terms, have the same meanings as those generally understood by those skilled in the art to which this disclosure belongs. Terms defined in commonly used dictionaries are additionally interpreted as having meanings consistent with relevant technical literature and the current message. Unless otherwise defined, they should not be overly interpreted as ideal or highly formalized meanings.

[0039] A wafer refers to a silicon chip used to make silicon semiconductor circuits, and its raw material is silicon. In order to improve the wafer's qualification rate, performance, and consistency, the wafer's temperature, position, and levelness usually need to be tested before processing, and adjustments must be made based on the test results to avoid processing errors caused by thermal expansion and contraction, position offset, and tilt. Therefore, testing the wafer before processing is a crucial pre-step in semiconductor manufacturing. However, in related technologies, the detection path for the wafer surface is mostly a serpentine path. Although this path is simple and easy to implement, this detection path has low detection efficiency and accuracy due to the large number of detection paths and the large number of detection points in low-value areas on the wafer surface.

[0040] Those skilled in the art will understand that, first, the wafer material will expand and contract with temperature changes. If the temperature is uneven or does not meet process requirements, it may cause deviations in processing dimensions and affect performance. Secondly, during the processing process, the wafer needs to be precisely aligned with the optical system, mask, electrodes, etc. in the equipment. If the wafer position is offset, it may cause pattern offset, misalignment, and affect circuit function. Furthermore, experience must be maintained to ensure that the process conditions (such as gas flow, liquid coverage, electric field distribution, etc.) of each part during the processing (such as etching, coating, cleaning, etc.) are uniform. If the wafer is tilted, it may lead to local over- or under-processing.

[0041] Based on the above problems, the optical beam transceiver in the present disclosure performs circumferential outer ring rotation detection along the first path segment, which can quickly obtain key data of the edge area, facilitating a rapid assessment of the overall circumferential state of the wafer; and when the optical beam transceiver performs two radial detections along the second path segment, it can quickly assess the overall radial state of the wafer, that is, the first path segment and the second path segment cover the high-value area of ​​the wafer surface. Therefore, compared with the serpentine path in the prior art, the present application can not only reduce the path that the optical beam transceiver needs to travel during the entire detection process to improve detection efficiency, but also improve the overall quality of the detection data by reducing the number of detection points in the low-value area, thereby improving detection accuracy.

[0042] Figure 1 The figure shows a schematic structural diagram of a wafer surface state detection device. Figure 2 : Shown is a circuit connection diagram of a wafer surface state detection device. Figure 3 The diagram of the first embodiment of the predetermined path is shown in FIG. Figure 1 、 Figure 2 and Figure 3 In the example, the wafer surface state detection device includes a beam transceiver 10 , a driving mechanism 30 and a signal analysis unit 40 .

[0043] The beam transceiver 10 is arranged above the wafer 100, emitting a first detection beam directed to different detection points on the surface of the wafer 100, and receiving a second detection beam; the first detection beam and the second detection beam of each detection point are used to obtain detection point status data.

[0044] The drive mechanism 30 is configured to load and drive the optical beam transceiver 10 to move along a predetermined path 20. The predetermined path 20 includes a first path segment 21 extending circumferentially along the periphery of the wafer 100, and a second path segment 22 connected to both ends of the first path segment 21 to form a closed path. The second path segment 22 has a diameter-reducing portion closer to the center than the first path segment 21.

[0045] The signal analysis unit 40 is coupled to the optical beam transceiver 10 for determining whether the surface state of the wafer 100 is qualified based on differences between the detection point state data of the detected detection points or relative to the preset state data.

[0046] The advantage of the above arrangement is that when the optical beam transceiver 10 performs circumferential outer ring rotation detection along the first path segment 21, it can quickly obtain key data of the edge area, facilitating a rapid assessment of the overall circumferential state of the wafer; and when the optical beam transceiver 10 performs two radial detections along the second path segment 22, it can quickly assess the overall radial state of the wafer, that is, the first path segment 21 and the second path segment 22 cover the high-value area of ​​the wafer surface. Therefore, compared with the serpentine path in the prior art, the present application can not only reduce the path that the optical beam transceiver 10 needs to travel during the entire detection process to improve detection efficiency, but also improve the overall quality of the detection data by reducing the number of detection points in the low-value area, thereby improving detection accuracy.

[0047] Exemplarily, the detection occurs before wafer 100 is processed; the wafer surface condition is at least one of temperature, position, and levelness. In other embodiments, the detection may also occur during or after processing, without limitation.

[0048] For example, the optical beam transceiver 10 is implemented as an infrared light transceiver. When inspecting the surface levelness and surface position of the wafer 100, the inspection point status data is implemented as the wafer thickness corresponding to each inspection point.

[0049] Those skilled in the art will understand that optical interferometry is a high-precision optical detection technology that measures physical quantities (such as length, thickness, and refractive index) based on the wave nature of light (interference). Its core principle is to invert the geometric or optical properties of the object being measured by analyzing the changes in the interference fringes produced by the superposition of light waves. Optical interference refers to the phenomenon in which the light intensity is redistributed due to phase differences when two or more coherent light waves are superimposed in space. When the optical path difference (the difference in the propagation path of the light waves) is an integer multiple of the wavelength, the light waves are in phase and constructive interference occurs (increased light intensity). When the optical path difference is an odd multiple of half a wavelength, the light waves are in opposite phase and destructive interference occurs (reduced light intensity). By measuring the changes in the interference fringes (the distribution of light intensity alternating between light and dark), the physical quantity to be measured can be derived.

[0050] When detecting the surface temperature of the wafer 100 , the detection point status data is implemented as the infrared radiation intensity emitted from the wafer surface corresponding to each detection point (combined with the known Stefan-Boltzmann law).

[0051] Further illustratively, the optical beam transceiver 10 includes a transmitting module 11 for transmitting an optical beam, and a receiving module 12 for receiving a reflected optical beam. In other embodiments, the optical beam transceiver 10 may also be implemented to emit white light or blue light, with the specific selection being determined based on the actual parameter to be detected. For example, white light is selected for color recognition.

[0052] It is understood that the transmitting module 11 emits infrared light to the surface of the wafer 100, and the receiving module 12 receives the infrared signal emitted from the surface of the wafer 100. The state of the surface of the wafer 100 is determined by the difference in the infrared signals between the transmitting module 11 and the receiving module 12.

[0053] Exemplarily, the preset state data includes a standard thickness consistent with wafer specifications, such as 200 μm for a 2-inch wafer and 300 μm for a 4-inch wafer. The difference condition is as follows: when the difference between the test point state data and the preset state data is greater than an error range, the test result for that test point is determined to be abnormal. Alternatively, when the difference between the test point state data of at least two test points is greater than an error range, the test result for that test point is determined to be abnormal.

[0054] Exemplarily, when the difference between the detection point status data of multiple detection points in a portion of the first path segment and the preset status data is greater than the error range, the levelness of the area on the wafer surface is determined to be unqualified. Further exemplarily, the multiple detection points may be adjacent or non-adjacent.

[0055] It will be appreciated by those skilled in the art that, preferably, the detection can be implemented as detecting while collecting data. For example, each time the detection point status data of a detection point is collected, it is compared with the preset status data. In this way, when the number of detection points where the difference between the detection point status data and the preset status data is greater than the error range reaches a certain level, or when the detection point is located in an important area on the wafer, the detection can be stopped and the wafer level can be directly determined to be unqualified without the need for subsequent detection, thereby further improving the detection efficiency. In other embodiments, all data can also be collected before detection.

[0056] It is understood that, in the first path segment, when the second values ​​between every two adjacent detection points among the plurality of detection points are abnormal, it is determined that the wafer surface is warped in the circumferential direction. In the second path segment, when the second values ​​between every two adjacent detection points among the plurality of detection points are abnormal, it is determined that the wafer surface is warped in the radial direction. In the above process, the plurality of detection points can be implemented as a continuous plurality or a discontinuous plurality.

[0057] In other embodiments, the wafer surface levelness can also be determined by selecting a limited number of test points on the wafer surface. For example, several test points can be selected at representative locations such as the center, edge, and chip array area of ​​the wafer surface. In this embodiment, the discrete data is implemented as the difference between the test point status data and the preset status data for each test point. It will be understood that if a single data point in the discrete data exceeds the error range, the test point is determined to be abnormal; if the discrete data fluctuates significantly, the wafer surface levelness is determined to be unqualified.

[0058] It is understandable that no matter whether discrete sampling detection or comprehensive detection is adopted in the predetermined path, if there are detection points with abnormal detection results in the important circuit manufacturing area of ​​the wafer, it is necessary to retest the circumferential area of ​​the detection point with abnormal results to improve the detection accuracy and avoid waste of wafers.

[0059] exist Figure 2 In this example, the wafer surface condition detection device further includes a processing unit 50. The processing unit 50 is electrically connected to the driving mechanism 30 and the signal analysis unit 40. The processing unit 50 is configured to receive a detection signal representing a detection result.

[0060] Exemplarily, the signal analysis unit 40 includes a signal analyzer 41 and a signal converter 42. It will be appreciated that the detection results generated by the signal analyzer 41 are output as analog signals. The signal converter 42 converts these analog signals into electrical signals, which are then input into the software of the wafer etcher control system by the processing unit 50. Through software processing of the signals, the wafer status is monitored in real time, and the wafer temperature or position is adjusted as necessary.

[0061] exist Figure 3 In the example, the variable diameter portion passes through the center of the first path segment 21. Exemplarily, the second path segment 22 is implemented as a broken line and consists of two straight line segments. Further exemplarily, the center angle of the first path segment 21 is implemented to be greater than or equal to 270 degrees and less than 360 degrees. Preferably, the center angle of the first path segment 21 is 270 degrees, and the angle between the two straight line segments is 90 degrees. It will be understood by those skilled in the art that the first path segment 21 can realize the detection of the outer ring of the wafer 100 (high deformation risk area), such as warping and deformation of the outer ring of the wafer 100 due to factors such as clamping, thermal stress or machining. And Figure 3 In this example, the second path segment 22, consisting of two straight segments, can help analyze the spatial distribution trend of wafer 100 warpage and deformation, for example, whether the wafer 100 exhibits gradual flattening or increasing deformation from the outside to the inside. Advantageously, this path offers significant advantages in efficiency, accuracy, and data quality compared to full-circle or serpentine inspection paths.

[0062] Exemplarily, the diameter-varying portion does not pass through the center of the first path segment 21 .

[0063] Figure 4 The diagram of the second embodiment of the predetermined path is shown in FIG. Figure 4 In this example, the diameter-varying portion is located between the center of the circle and the first path segment 21 .

[0064] Figure 5 The diagram of the third embodiment of the predetermined path is shown in FIG. Figure 5 In this example, the center of the circle is located between the diameter-changing portion and the first path segment 21 .

[0065] exist Figure 4 and Figure 5 In this example, the second path segment 22 can also be implemented as a broken line and composed of two straight line segments. It can be understood that Figure 4 The total length of the second path segment 22 in the embodiment is successively greater than Figure 3 Example Figure 5 Example.

[0066] In other embodiments, the second path segment 22 may also be implemented as a curve, for example, consisting of two arcs, or partly a broken line and partly a curve, but the present invention is not limited thereto.

[0067] Figure 6 The diagram of the bending portion in the second path segment is shown in FIG. Figure 6 In the example, the second path segment 22 has a plurality of bends 201 along its extension direction. Further illustratively, the plurality of bends 201 are all implemented as broken line segments. It can be understood by those skilled in the art that the direction of the bends 201 can further improve the detection range of the light beam transceiver 10 in the second path segment 22, thereby further improving the detection accuracy of the wafer 100. Further illustratively, the number of the bends 201 is positively correlated with the empirical radius and the size of the second path segment 22. In other embodiments, the bends 201 can also be implemented as all curved segments or as partially broken line segments and partially as curved segments. It is not limited thereto.

[0068] Figure 7 , which is a cross-sectional schematic diagram of the driving mechanism disclosed herein. Figure 8 The figure shows a cross-sectional view of the driving mechanism of the present invention from another perspective. Figure 7 and Figure 8In this example, the driving mechanism 30 includes a radial support member 31 and a loading portion for loading the optical beam transceiver 10. The radial support member 31 is rotatably disposed along the center of the circle, and the loading portion is disposed on the radial support member 31 so as to reciprocate along the extension direction of the radial support member 31. For example, the radial support member 31 is drivingly connected to a first driving member 33, such as a motor.

[0069] Illustratively, a reciprocating member 34 is provided between the loading portion and the radial support member 31. The reciprocating member 34 comprises a threaded reciprocating screw 341 (illustrated only in the figure; the screw threads are not shown) and a reciprocating slider 342. The reciprocating screw 341 is rotatably provided on the radial support member 31 and parallel to the radial support member 31. The reciprocating slider 342 is slidably coupled to the radial support member 31 along the extension direction of the radial support member 31. The loading portion is provided on the reciprocating slider 342, and preferably, the loading portion is provided on the bottom wall of the reciprocating slider 342.

[0070] In other embodiments, the loading portion may also be formed at the bottom of the reciprocating slider 342 .

[0071] In other embodiments, the reciprocating component 34 may also be implemented as a telescopic component, such as a pneumatic cylinder, an oil cylinder, or an electric cylinder.

[0072] Further illustratively, the reciprocating slider 342 is slidably coupled to the radial support member 31 in a manner that limits rotation. Figure 8 In this example, the restriction of the rotation of the reciprocating slider 342 is achieved by the sliding combination of the reciprocating slider 342 and the sliding groove.

[0073] Illustratively, the bottom wall of the radial support member 31 is provided with an inwardly recessed groove, the reciprocating screw 341 is disposed within the groove, and the reciprocating slider 342 is engaged within the groove. For example, the cross-sections of the groove and the reciprocating slider 342 are both rectangular. Further illustratively, the reciprocating screw 341 is drivenly connected to a second driving member 343. One end of the reciprocating screw 341 passes through the radial support member 31 and is fixedly connected to the output end of the second driving member 343, while the other end is rotatably connected to the radial support member 31.

[0074] Further illustratively, the moving path of the reciprocating slider 342 on the reciprocating screw 341 is greater than the radius of the wafer 100, so that the loading part can pass over the center of the wafer 100 in the radial direction to achieve Figure 4 The second path segment 22 in the predetermined path 20.

[0075] It is understood by those skilled in the art that when the optical beam transceiver 10 detects along the first path segment 21, only the first driving member 33 is required to operate, and the optical beam transceiver 10 moves in a circular motion along the radial support member 31. When the optical beam transceiver 10 detects along the second path segment 22, the first driving member 33 and the second driving member 343 need to cooperate with each other to operate. Figure 3 Taking the second path segment 22 in the embodiment as an example, the second driving member 343 first drives and drives the light beam transceiver 10 to move radially inward through the cooperation of the reciprocating screw 341 and the reciprocating slider 342, and the first driving member 33 then drives to rotate the radial support member 31 90 degrees counterclockwise, and the second driving member 343 then drives and drives the light beam transceiver 10 to move radially outward through the cooperation of the reciprocating screw 341 and the reciprocating slider 342, so that the second path segment 22 and the first path segment 21 form a closed loop.

[0076] Then Figure 5 Taking the predetermined path 20 in the example as an example, when the optical beam transceiver 10 detects along the first path segment 21, only the first driving member 33 needs to operate, and the optical beam transceiver 10 moves in a circular motion along the radial support member 31. When the optical beam transceiver 10 detects along the second path segment 22, the first driving member 33 and the second driving member 343 need to cooperate with each other. For example, while the optical beam transceiver 10 moves inward and then outward, the radial support member 31 rotates counterclockwise to achieve Figure 5 The second path segment 22 in the example.

[0077] Figure 9 The figure shows a schematic diagram of the planned path including the retest path. Figure 9 In this example, the predetermined path 20 further includes a retest path 23 for performing rotational testing on a circumferential region of a test point on the surface of the wafer 100 where an abnormal test result is obtained. It will be understood by those skilled in the art that the test point may be one of the test points where an abnormal test result is obtained during a discrete sampling test or a comprehensive test.

[0078] If the detection point with an abnormal detection result is outside the manufacturing area of ​​the multiple chips, there is no need to implement the retest path, and the detection can continue along the predetermined path.

[0079] In other embodiments, the detection point with abnormal detection results is outside the production area of ​​multiple chips, but the detection point is close to the production area of ​​multiple chips, then the circumferential area of ​​the detection point can also be retested. If the detection result of one of the detection points in the retest path is abnormal and is located in the production area of ​​multiple chips, then the detection point with abnormal detection results in the retest path needs to be retested.

[0080] If the test point with an abnormal test result is within the production area of ​​multiple chips, a rotational retest of the area surrounding the abnormal test point is required to continue determining whether the wafer is qualified. The first situation is: the test point with an abnormal test result is within the production area, but still outside the critical area of ​​a single chip. In this case, the area surrounding the test point is tested. If at least one test point with an abnormal test result in the retest path is within the critical area of ​​a single chip, the wafer is deemed unqualified. Otherwise, testing continues along the predetermined path.

[0081] The second state is: if the detection point with abnormal detection results is within the production area and within the important area of ​​a single chip, the wafer is judged to be unqualified.

[0082] Those skilled in the art will appreciate that when it is necessary to re-measure the circumferential area of ​​a certain detection point in a predetermined path, in order to improve efficiency, discrete sampling measurement can also be performed instead of comprehensive acquisition. For example, 5-10 detection points are collected for each re-measurement path 23.

[0083] Exemplarily, the number of detection points in the discrete sampling detection is adjusted according to the radius of the re-test path and is positively correlated. Further exemplarily, the radius of the re-test path is positively correlated with the size of the wafer.

[0084] It can be understood that the detection point status data of the detection point in the re-test path can be compared with other detection points in the re-test path, and can also be compared with the detection point status data of the detection point in the first path segment or the second path segment, so as to provide a detection result of whether the surface state of the wafer 100 is qualified based on the differences between the detection point status data of the detected detection points or relative to the preset status data.

[0085] Exemplarily, the retest path 23 may be formed in at least one of the first path segment 21 and the second path segment 22 , and where it is formed specifically depends on whether the detection result somewhere in the first path segment 21 or the second path segment 22 is abnormal.

[0086] Further illustratively, the radius of the re-measurement path 23 is positively correlated with the size of the wafer 100 , and the edge of the re-measurement path 23 does not exceed the edge of the wafer 100 .

[0087] Figure 10 The diagram in FIG is a schematic diagram of the structure of the driving mechanism suitable for the retest path. Figure 10 In the example, the driving mechanism 30 further includes a rotating rod 35, which is driven to rotate reversely at the bottom of the reciprocating slider 342. One end of the rotating rod 35 is driven to connect to a third driving member 36, and the other end is used to load the light beam transceiver 10.

[0088] Exemplarily, the rotating rod 35 rotates once each time, that is, the optical beam transceiver 10 rotates 360 degrees to perform rotation detection on the circumferential area of ​​the position where the detection result is abnormal on the surface of the wafer 100 .

[0089] It should be noted that the initial state is Figure 10 As shown, the reciprocating slider 342 does not move to the outer edge of the reciprocating screw 341. Therefore, when the optical beam transceiver 10 is located ( Figure 10 When the detection result of the position (shown by the dashed line in the middle) is abnormal, the second driving member 343 drives the reciprocating slider 342 to continue to move outward along the reciprocating screw 341, so that the third driving member 36 is aligned with the position (it will be understood that the length of the rotating rod 35 is fixed, and the feed amount per rotation of the reciprocating screw 341 is also fixed. Therefore, this can be achieved by controlling the number of rotations of the reciprocating screw 341). The third driving member 36 then drives the optical beam transceiver 10 to rotate along with the rotation of the rotating rod 35 to achieve rotation detection of the circumferential area of ​​the position. After the retest is completed, the reciprocating slider 342 is moved inward to its initial state.

[0090] Combined here Figure 2 For example, each time the processing unit 50 receives a detection signal indicating that the detection result is abnormal, it instructs the driving mechanism 30 to perform the above-mentioned driving action.

[0091] In other embodiments, the radius of the retest path is adjustable. For example, the length of the rotating rod 35 can be adjusted, such as by a pneumatic cylinder, an oil cylinder, or a cooperating rotatable ball screw and a slider. In this way, when the inspection results of the area surrounding the detection point are normal, the rotating rod 35 can be extended or shortened to inspect a larger or smaller surrounding area, thereby improving the detection accuracy. At the same time, by adjusting the length of the rotating rod 35, the applicability of the wafer surface condition detection device can be improved to detect wafers of different sizes.

[0092] In other embodiments, the length of the rotating rod 35 can also be gradually extended or shortened during the retest process. That is, the retest path is vortex-shaped, with the optical beam transceiver 10 moving from inside to outside or from outside to inside. This arrangement has the advantage that the retest path 23 can inspect a larger area around the abnormal detection point, thereby improving detection efficiency.

[0093] For example, the second drive element 343 and the third drive element 36 are also implemented as motors.

[0094] In other embodiments, the driving mechanism 30 may also be implemented as a robotic arm.

[0095] Figure 11 The diagram in FIG is a schematic diagram of the structure of a computer device in one embodiment of the present disclosure. Figure 11 In the example,

[0096] The computer device 120 includes a bus 1201, a processor 1202, and a memory 1203. The processor 1202 and the memory 1203 can communicate with each other via the bus 1201. The memory 1203 can store program instructions. The processing unit 50 described above can be implemented by the computer device 120 instead. The processor 1202 implements the above-mentioned actions or instructions by executing the program instructions in the memory 1203.

[0097] Bus 1201 may be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus. Buses can be classified into address buses, data buses, and control buses. For ease of illustration, although only one thick line is used in the figure, this does not mean that there is only one bus or only one type of bus.

[0098] In some embodiments, the processor 1202 may be implemented as a central processing unit (CPU), a microprocessor unit (MCU), a system on a chip (SoC), or a field programmable gate array (FPGA). The memory 1203 may include volatile memory, such as random access memory (RAM), for temporarily storing data while running programs.

[0099] The memory 1203 may also include a non-volatile memory for data storage, such as a read-only memory (ROM), a flash memory, a hard disk drive (HDD), or a solid-state disk (SSD).

[0100] In some embodiments, the computer device 120 may further include a communicator 1204. The communicator 1204 is used to communicate with the outside world. In a specific example, the communicator 1204 may include one or a group of wired and / or wireless communication circuit modules. For example, the communicator 1204 may include one or more of a wired network card, a USB module, a serial interface module, etc. The wireless communication protocols followed by the wireless communication module include, for example, near field communication (NFC) technology, infrared (IR) technology, Global System for Mobile communications (GSM), General Packet Radio Service (GPRS), Code Division Multiple Access (CDMA), Wideband Code Division Multiple Access (WCDMA), Time-Division Code Division Multiple Access (TD-SCDMA), Long Term Evolution (LTE), Bluetooth (BT), Global Navigation Satellite System (GNSS), etc. One or more of the following.

[0101] Yet another embodiment of the present disclosure provides a processing device, comprising a wafer processing platform and the wafer surface state detection device; the wafer processing platform is used to carry wafers; the wafer surface state detection device is correspondingly provided on the wafer processing platform.

[0102] In summary, the present disclosure provides a wafer surface condition detection device and processing equipment. The wafer surface condition detection device includes a beam transceiver, a drive mechanism, and a signal analysis unit. The beam transceiver is disposed above the wafer and transmits a first detection beam directed to different detection points on the wafer surface and receives a second detection beam. The first and second detection beams at each detection point are used to obtain detection point status data. The drive mechanism is configured to load and drive the beam transceiver along a predetermined path. The predetermined path includes a first path segment extending circumferentially along the wafer's periphery, and a second path segment connected at both ends of the first path segment to form a closed path. The second path segment includes a diameter-reducing portion closer to the center than the first path segment. The signal analysis unit, coupled to the beam transceiver, determines whether the wafer surface condition is qualified based on differences between the detection point status data of the detected detection points or relative to preset status data. The preset status data includes a standard thickness that conforms to wafer specifications. The processing equipment includes a wafer processing stage and the wafer surface condition detection device. The advantage of the above arrangement is that when the optical beam transceiver performs circumferential outer ring rotation detection along the first path segment, it can quickly obtain key data of the edge area, facilitating a rapid assessment of the overall circumferential state of the wafer; and when the optical beam transceiver performs two radial detections along the second path segment, it can quickly assess the overall radial state of the wafer, that is, the first path segment and the second path segment cover the high-value area of ​​the wafer surface. Therefore, compared with the serpentine path in the prior art, the present application can not only reduce the path that the optical beam transceiver needs to travel during the entire detection process to improve detection efficiency, but also improve the overall quality of the detection data by reducing the number of detection points in the low-value area, thereby improving detection accuracy.

[0103] The above embodiments are merely illustrative of the principles and effects of this disclosure and are not intended to limit this disclosure. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of this disclosure. Therefore, any equivalent modifications or alterations made by a person skilled in the art without departing from the spirit and technical concepts disclosed herein shall be encompassed by the scope of protection of this disclosure.

Claims

1. A wafer surface condition detection device, characterized in that: include: A beam transceiver is disposed above the wafer and transmits a first detection beam directed to different detection points on the wafer surface and receives a reflected second detection beam; the first detection beam and the second detection beam at each detection point are used to obtain detection point status data; a drive mechanism for loading and driving the optical beam transceiver to move along a predetermined path; the predetermined path comprising: a first path segment extending circumferentially along the periphery of the wafer, and a second path segment connected to both ends of the first path segment to form a closed path; the second path segment having a diameter-reducing portion closer to the center than the first path segment; A signal analysis unit is coupled to the light beam transceiver and is used to determine whether the surface condition of the wafer is qualified based on the difference between the detection point status data of the detected detection points or relative to the preset status data; the preset status data includes a standard thickness that conforms to the wafer specifications.

2. The wafer surface condition detection device according to claim 1, characterized in that: The diameter-changing portion passes through the center of the first path segment.

3. The wafer surface condition detection device according to claim 1, wherein: The diameter-changing portion does not pass through the center of the first path segment.

4. The wafer surface condition detection device according to claim 3, characterized in that: The diameter-changing portion is located between the center of the circle and the first path segment; and / or the center of the circle is located between the diameter-changing portion and the first path segment.

5. The wafer surface condition detection device according to claim 1, wherein: The predetermined path also includes a retest path for performing rotational testing on a circumferential area of ​​a test point on the wafer surface where the test result is abnormal.

6. The wafer surface condition detection device according to any one of claims 1 to 5, characterized in that: The second path segment has a plurality of bending portions along its extending direction. The bending portions are implemented to be formed by curves or broken lines. The number of the bending portions is positively correlated with the size of the wafer.

7. The wafer surface condition detection device according to claim 1, wherein: The detection occurs before wafer processing; the wafer surface state is at least one of temperature, position and levelness.

8. The wafer surface condition detection device according to claim 1, wherein: The driving mechanism includes a radial support and a loading portion for loading the optical beam transceiver; the radial support is rotatably arranged, and the loading portion is arranged on the radial support so as to reciprocate along the extension direction of the radial support.

9. The wafer surface condition detection device according to claim 8, characterized in that: A reciprocating component is provided between the loading portion and the radial support; the reciprocating component includes a reciprocating screw and a reciprocating slider that are threaded together; the reciprocating screw is rotatable and is provided on the radial support parallel to the radial support, and the reciprocating slider is slidably coupled to the radial support along the extension direction of the radial support; the loading portion is provided on the reciprocating slider.

10. A processing equipment, characterized in that, include: Wafer processing stage; The wafer surface condition detection device as described in any one of claims 1 to 9 is correspondingly arranged on the wafer processing platform.

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